WO2018040159A1 - 阵列基板及其制作方法、液晶面板 - Google Patents

阵列基板及其制作方法、液晶面板 Download PDF

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WO2018040159A1
WO2018040159A1 PCT/CN2016/100046 CN2016100046W WO2018040159A1 WO 2018040159 A1 WO2018040159 A1 WO 2018040159A1 CN 2016100046 W CN2016100046 W CN 2016100046W WO 2018040159 A1 WO2018040159 A1 WO 2018040159A1
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layer
insulating layer
drain
active layer
gate
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French (fr)
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徐亮
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/308,140 priority Critical patent/US10268093B2/en
Publication of WO2018040159A1 publication Critical patent/WO2018040159A1/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/02—Materials and properties organic material

Definitions

  • the invention belongs to the field of liquid crystal display technology, and in particular to an array substrate, a manufacturing method thereof and a liquid crystal panel.
  • LCDs liquid crystal displays
  • the liquid crystal display usually includes a liquid crystal panel and a backlight module.
  • the liquid crystal panel does not emit light. Therefore, the backlight module is required to provide a uniform surface light source to the liquid crystal panel to display an image on the liquid crystal panel.
  • the gate lines and the data lines are orthogonally arranged alternately.
  • the gate lines and the data lines occupy a large amount of space of the substrate, which is disadvantageous for achieving a high aperture ratio.
  • the present invention provides an array substrate in which gate lines and data lines are overlapped, a method of fabricating the same, and a liquid crystal panel.
  • an array substrate comprising: a substrate; a gate line on the substrate; and a gate connected to the gate line; covering the gate line and the gate a first insulating layer; an active layer on the first insulating layer; an organic layer on the first insulating layer and exposing the active layer; a source and a drain on the organic layer And a data line connected to the source, the source and the drain are respectively in contact with the active layer, the data line is overlapped with the gate line; covering the source, the a drain, the data line, and a second insulating layer of the active layer; a via in the second insulating layer, the via exposing the drain; a pixel on the second insulating layer Electricity a pole, the pixel electrode contacting the drain through the via.
  • the organic layer has a through hole having a width larger than a width of the active layer to expose the active layer and a surrounding first insulating layer thereof.
  • a source on the organic layer extends over one end of the active layer through a first insulating layer exposed by the via, and a drain on the organic layer passes through The through hole exposes the first insulating layer and extends over the other end of the active layer.
  • the gate is disposed opposite to the active layer.
  • a method of fabricating an array substrate includes: providing a substrate; forming a gate line on the substrate; and a gate connected to the gate line; forming a cover on the substrate a first insulating layer of the gate line and the gate; forming an active layer on the first insulating layer; forming an organic layer exposing the active layer on the first insulating layer; Forming a source, a drain, and a data line connected to the source on the organic layer; wherein the source and the drain are respectively in contact with the active layer, the data line and the gate
  • the lines are overlapped; a second insulating layer covering the source, the drain, and the data line is formed on the active layer; a via is formed in the second insulating layer; wherein the via Exposing the drain; forming a pixel electrode on the second insulating layer; wherein the pixel electrode contacts the drain through the via.
  • the via hole exposing the drain is formed by: forming a via hole in the organic layer; wherein a width of the via hole is larger than a width of the active layer to The source layer and the first insulating layer around it are exposed.
  • the method for respectively contacting the source and the drain with the active layer is: extending a source on the organic layer through a first insulating layer exposed by the through hole Adjacent to one end of the active layer, and extending a drain on the organic layer over the other end of the active layer through a first insulating layer exposed by the via.
  • a liquid crystal panel comprising a color filter substrate and an array substrate disposed on a cartridge, wherein the array substrate is the array substrate described above, or the array substrate is fabricated by the above-described fabrication method.
  • the present invention Compared with the prior art data line and gate line orthogonal arrangement, the present invention The array substrate and the manufacturing method thereof reduce the space of the substrate occupied by the gate line and the data line by overlapping the data line and the gate line, thereby achieving an increase in aperture ratio.
  • FIG. 1 is a schematic structural view of a liquid crystal panel according to an embodiment of the present invention.
  • FIG. 2 is a plan view of an array substrate in accordance with an embodiment of the present invention.
  • FIG. 3 is a side view of an array substrate in accordance with an embodiment of the present invention.
  • FIG. 4 is a flow chart of a method of fabricating an array substrate in accordance with an embodiment of the present invention.
  • FIG. 1 is a schematic structural view of a liquid crystal panel according to an embodiment of the present invention.
  • a liquid crystal panel includes an array substrate 100 and a color filter substrate (CF substrate) 200 disposed on a cartridge, and is sandwiched between the array substrate 100 and the color filter substrate 200 .
  • the liquid crystal layer 300 has a plurality of liquid crystal molecules in the liquid crystal layer 300.
  • the color filter substrate 200 generally includes a color filter composed of a red (R) filter, a green (G) filter, a blue (B) filter, a black matrix, an alignment film, and the like.
  • R red
  • G green
  • B blue
  • FIG. 2 is based on this A plan view of an array substrate of an embodiment of the invention.
  • 3 is a side view of an array substrate in accordance with an embodiment of the present invention.
  • 4 is a flow chart of a method of fabricating an array substrate in accordance with an embodiment of the present invention.
  • FIG. 2 in order to clearly show the structures of the drain 160a, the source 160b, and the data line 160c connected to the source 160b, the passivation layer 170 and the via 171 formed in the passivation layer 170 are not shown. Please refer to FIG. 3 for the structure of the passivation layer 170 and the via 171.
  • a substrate 110 is provided.
  • the substrate 110 may be a transparent glass substrate or a resin substrate.
  • a gate line 120a and a gate 120b connected to the gate line 120a are formed on the substrate 110.
  • a metal layer (not shown) formed on the substrate 110 may be exposed and developed to form a gate line 120a and a gate electrode 120b. That is, the gate line 120a and the gate electrode 120b are made of a metal material.
  • a gate insulating layer 130 covering the gate lines 120a and the gates 120b is formed on the substrate 110.
  • the gate insulating layer 130 may be formed of SiO x , SiN x , or a mixture of both.
  • the active layer 140 is formed on the gate insulating layer 130.
  • the active layer 140 may be formed of amorphous silicon (a-Si).
  • the upper portion of the amorphous silicon may be doped such that the lower portion of the active layer 140 is amorphous silicon and the upper portion is doped amorphous silicon.
  • the active layer 140 and the gate electrode 120b are disposed opposite each other, but the invention is not limited thereto.
  • step S450 an organic layer 150 exposing the active layer 140 is formed on the gate insulating layer 130.
  • the organic layer 150 is exposed by exposing the active layer 140 by forming a via 151 in the organic layer 150 such that the width of the via 151 is greater than the width of the active layer 140 to surround the active layer 140 and its surroundings.
  • the gate insulating layer 130 is exposed.
  • step S460 a drain 160a, a source 160b, and a data line 160c connected to the source 160b are formed on the organic layer 150; wherein the drain 160a and the source 160b are in contact with the active layer 140, respectively, and the data line 160c It overlaps with the gate line 120a. Further, from the space point of view, the data line 160c is parallel and overlapped with the gate line 120a.
  • the specific implementation method of the drain 160a and the source 160b contacting the active layer 140 respectively is:
  • the source 160b on the organic layer 150 is extended over one end of the active layer 140 through the gate insulating layer 130 exposed by the via 151, and the drain 160a on the organic layer 150 passes through the via 151.
  • the exposed gate insulating layer 130 extends over the other end of the active layer 150.
  • a passivation layer 170 covering the drain 160a, the source 160b, and the data line 160c is formed on the organic layer 150.
  • the passivation layer 170 may be formed of SiO x , SiN x , or a mixture of both.
  • step S480 a via hole 171 is formed in the passivation layer 170, wherein the via hole 171 exposes the drain electrode 160a. Further, the via 171 exposes a portion of the drain 160a.
  • step S490 the pixel electrode 180 is formed on the passivation layer 170; wherein the pixel electrode 180 contacts the drain electrode 160a through the via 171.
  • the array substrate and the method of fabricating the same according to embodiments of the present invention are made by overlapping data lines with gate lines, as compared with prior art data lines and gate lines being orthogonally disposed.
  • the gate line and the data line occupy the space of the substrate, thereby achieving an increase in aperture ratio.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

一种阵列基板（100），其包括：基板（110）；在基板（110）上的栅极线（120a）以及与栅极线（120a）连接的栅极（120b）；覆盖栅极线（120a）和栅极（120b）的第一绝缘层（130）；在第一绝缘层（130）上的有源层（140）；在第一绝缘层（130）上且将有源层（140）暴露的有机层（150）；在有机层（150）上的源极（160b）、漏极（160a）以及与源极（160b）连接的数据线（160c），源极（160b）和漏极（160a）分别与有源层（140）接触，数据线（160c）与栅极线（120a）重叠在一起；覆盖源极（160b）、漏极（160a）、数据线（160c）以及有源层（140）的第二绝缘层（170）；在第二绝缘层（170）中的过孔（171），过孔（171）暴露漏极（160a）；在第二绝缘层（170）上的像素电极（180），像素电极（180）通过过孔（171）接触漏极（160a）。通过使数据线（160c）与栅极线（120a）重叠在一起，减小栅极线（120a）和数据线（160c）所占基板（110）的空间，从而实现开口率的提升。

Description

阵列基板及其制作方法、液晶面板 技术领域
本发明属于液晶显示技术领域，具体地讲，涉及一种阵列基板及其制作方法、液晶面板。
背景技术
随着光电与半导体技术的演进，也带动了平板显示器(Flat Panel Display)的蓬勃发展，而在诸多平板显示器中，液晶显示器(Liquid Crystal Display，简称LCD)因具有高空间利用效率、低消耗功率、无辐射以及低电磁干扰等诸多优越特性，已被应用于生产生活的各个方面。
液晶显示器通常包括相对设置的液晶面板和背光模块，其中，由于液晶面板无法发光，因此需要背光模块向液晶面板提供均匀的面光源，以使液晶面板显示影像。
在现有的液晶面板中，栅极线和数据线正交交错设置。然而，在这种走线方式下，栅极线和数据线占用了基板的大量空间，不利于实现高开口率。
发明内容
为了解决上述技术问题，本发明提供了一种栅极线和数据线重叠在一起的阵列基板及其制作方法、液晶面板。
根据本发明的一方面，提供了一种阵列基板，其包括：基板；在基板上的栅极线以及与所述栅极线连接的栅极；覆盖所述栅极线和所述栅极的第一绝缘层；在所述第一绝缘层上的有源层；在所述第一绝缘层上且将所述有源层暴露的有机层；在所述有机层上的源极、漏极以及与所述源极连接的数据线，所述源极和所述漏极分别与所述有源层接触，所述数据线与所述栅极线重叠在一起；覆盖所述源极、所述漏极、所述数据线以及所述有源层的第二绝缘层；在第二绝缘层中的过孔，所述过孔暴露所述漏极；在所述第二绝缘层上的像素电 极，所述像素电极通过所述过孔接触所述漏极。
进一步地，所述有机层中具有通孔，所述通孔的宽度大于所述有源层的宽度，以将所述有源层及其周围的第一绝缘层暴露。
进一步地，在所述有机层上的源极经过由所述通孔暴露的第一绝缘层而延伸至所述有源层的一端之上，在所述有机层上的漏极经过由所述通孔暴露的第一绝缘层而延伸至所述有源层的另一端之上。
进一步地，所述栅极与所述有源层正相对设置。
根据本发明的另一方面，提供了一种阵列基板的制作方法，其包括：提供一基板；在基板上形成栅极线以及与所述栅极线连接的栅极；在基板上形成覆盖所述栅极线和所述栅极的第一绝缘层；在所述第一绝缘层上形成有源层；在所述第一绝缘层上形成将所述有源层暴露的有机层；在所述有机层上形成源极、漏极以及与所述源极连接的数据线；其中，所述源极和所述漏极分别与所述有源层接触，所述数据线与所述栅极线重叠在一起；在所述有源层上形成覆盖所述源极、所述漏极及所述数据线的第二绝缘层；在第二绝缘层中形成过孔；其中，所述过孔暴露所述漏极；在所述第二绝缘层上形成像素电极；其中，所述像素电极通过所述过孔接触所述漏极。
进一步地，所述过孔暴露所述漏极的具体实现方法为：在所述有机层中形成通孔；其中，所述通孔的宽度大于所述有源层的宽度，以将所述有源层及其周围的第一绝缘层暴露。
进一步地，所述源极和所述漏极分别与所述有源层接触的具体实现方法为：使在所述有机层上的源极经过由所述通孔暴露的第一绝缘层而延伸至所述有源层的一端之上，并使在所述有机层上的漏极经过由所述通孔暴露的第一绝缘层而延伸至所述有源层的另一端之上。
根据本发明的又一方面，提供了一种液晶面板，其包括对盒设置的彩膜基板以及阵列基板，所述阵列基板为上述的阵列基板，或者利用上述的制作方法制作所述阵列基板。
本发明的有益效果：与现有技术的数据线与栅极线正交设置相比，本发明 的阵列基板及其制作方法，通过使数据线与栅极线重叠在一起，减小栅极线和数据线所占基板的空间，从而实现开口率的提升。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1根据本发明的实施例的液晶面板的结构示意图；
图2是根据本发明的实施例的阵列基板的平面图；
图3是根据本发明的实施例的阵列基板的侧视图；
图4是根据本发明的实施例的阵列基板的制作方法的流程图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
在附图中，为了清楚器件，夸大了层和区域的厚度。相同的标号在附图中始终表示相同的元件。
图1根据本发明的实施例的液晶面板的结构示意图。
参照图1，根据本发明的实施例的液晶面板包括：对盒设置的阵列基板(Array基板)100和彩膜基板(CF基板)200，以及夹设于阵列基板100和彩膜基板200之间的液晶层300，其中，液晶层300中具有若干液晶分子。彩膜基板200通常包括由红(R)滤光片、绿(G)滤光片、蓝(B)滤光片构成的彩色滤光片、黑色矩阵、配向膜等。更加详细地彩膜基板的结构请参照相关的现有技术，这里不再赘述。
以下对根据本发明的实施例的阵列基板100进行详细说明。图2是根据本 发明的实施例的阵列基板的平面图。图3是根据本发明的实施例的阵列基板的侧视图。图4是根据本发明的实施例的阵列基板的制作方法的流程图。在图2中，为了清楚地示出漏极160a、源极160b以及与源极160b连接的数据线160c的结构，未示出钝化层170及形成在钝化层170中的过孔171。钝化层170及过孔171的结构请参照图3。
参照图2至图4，在步骤S410中，提供一基板110。这里，该基板110可以是透明的玻璃基板或者树脂基板。
在步骤S420中，在基板110上形成栅极线120a以及与栅极线120a连接的栅极120b。这里，可对形成在基板110上的金属层(未示出)进行曝光、显影，从而形成栅极线120a和栅极120b。也就是说，栅极线120a和栅极120b由金属材料制成。
在步骤S430中，在基板110上形成覆盖栅极线120a和栅极120b的栅极绝缘层130。这里，栅极绝缘层130可以由SiOx、SiNx或者二者的混合物形成。
在步骤S440中，在栅极绝缘层130上形成有源层140。这里，有源层140可以由非晶硅(a-Si)形成。进一步地，也可以对非晶硅的上层部分进行掺杂，从而使有源层140的下层部分为非晶硅，上层部分为掺杂非晶硅。
进一步优选地，有源层140和栅极120b正相对设置，但本发明并不限制于此。
在步骤S450中，在栅极绝缘层130上形成将有源层140暴露的有机层150。
进一步地，有机层150将有源层140暴露的实现方法为：在有机层150中形成通孔151，使通孔151的宽度大于有源层140的宽度，以将有源层140及其周围的栅极绝缘层130暴露。
在步骤S460中，在有机层150上形成漏极160a、源极160b以及与源极160b连接的数据线160c；其中，漏极160a和源极160b分别与有源层140接触，并且数据线160c与栅极线120a重叠在一起。进一步地，从空间上看，数据线160c与栅极线120a上下平行且重叠在一起。
进一步地，漏极160a和源极160b分别与有源层140接触的具体实现方法为：
使在有机层150上的源极160b经过由通孔151暴露的栅极绝缘层130而延伸至有源层140的一端之上，并使在有机层150上的漏极160a经过由通孔151暴露的栅极绝缘层130而延伸至有源层150的另一端之上。
在步骤S470中，在有机层150上形成覆盖漏极160a、源极160b以及数据线160c的钝化层170。这里，钝化层170可以由SiOx、SiNx或者二者的混合物形成。
在步骤S480中，在钝化层170中形成过孔171，其中，过孔171暴露漏极160a。进一步地，过孔171暴露漏极160a的部分。
在步骤S490中，在钝化层170上形成像素电极180；其中，像素电极180通过过孔171接触漏极160a。
综上所述，与现有技术的数据线与栅极线正交设置相比，根据本发明的实施例的阵列基板及其制作方法，通过使数据线与栅极线重叠在一起，减小栅极线和数据线所占基板的空间，从而实现开口率的提升。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (10)

  1. 一种阵列基板，其中，包括：
    基板；
    在基板上的栅极线以及与所述栅极线连接的栅极；
    覆盖所述栅极线和所述栅极的第一绝缘层；
    在所述第一绝缘层上的有源层；
    在所述第一绝缘层上且将所述有源层暴露的有机层；
    在所述有机层上的源极、漏极以及与所述源极连接的数据线，所述源极和所述漏极分别与所述有源层接触，所述数据线与所述栅极线重叠在一起；
    覆盖所述源极、所述漏极、所述数据线以及所述有源层的第二绝缘层；
    在第二绝缘层中的过孔，所述过孔暴露所述漏极；
    在所述第二绝缘层上的像素电极，所述像素电极通过所述过孔接触所述漏极。
  2. 根据权利要求1所述的阵列基板，其中，所述有机层中具有通孔，所述通孔的宽度大于所述有源层的宽度，以将所述有源层及其周围的第一绝缘层暴露。
  3. 根据权利要求2所述的阵列基板，其中，在所述有机层上的源极经过由所述通孔暴露的第一绝缘层而延伸至所述有源层的一端之上，在所述有机层上的漏极经过由所述通孔暴露的第一绝缘层而延伸至所述有源层的另一端之上。
  4. 根据权利要求1所述的阵列基板，其中，所述栅极与所述有源层正相对设置。
  5. 一种阵列基板的制作方法，其中，包括：
    提供一基板；
    在基板上形成栅极线以及与所述栅极线连接的栅极；
    在基板上形成覆盖所述栅极线和所述栅极的第一绝缘层；
    在所述第一绝缘层上形成有源层；
    在所述第一绝缘层上形成将所述有源层暴露的有机层；
    在所述有机层上形成源极、漏极以及与所述源极连接的数据线；其中，所述源极和所述漏极分别与所述有源层接触，所述数据线与所述栅极线重叠在一起；
    在所述有源层上形成覆盖所述源极、所述漏极及所述数据线的第二绝缘层；
    在第二绝缘层中形成过孔；其中，所述过孔暴露所述漏极；
    在所述第二绝缘层上形成像素电极；其中，所述像素电极通过所述过孔接触所述漏极。
  6. 根据权利要求5所述的阵列基板的制作方法，其中，所述有机层将所述有源层暴露的具体实现方法为：
    在所述有机层中形成通孔；其中，所述通孔的宽度大于所述有源层的宽度，以将所述有源层及其周围的第一绝缘层暴露。
  7. 根据权利要求6所述的阵列基板的制作方法，其中，所述源极和所述漏极分别与所述有源层接触的具体实现方法为：
    使在所述有机层上的源极经过由所述通孔暴露的第一绝缘层而延伸至所述有源层的一端之上，并使在所述有机层上的漏极经过由所述通孔暴露的第一绝缘层而延伸至所述有源层的另一端之上。
  8. 根据权利要求5所述的阵列基板的制作方法，其中，所述栅极与所述 有源层正相对设置。
  9. 一种液晶面板，包括对盒设置的彩膜基板以及阵列基板，其中，所述阵列基板包括：
    基板；
    在基板上的栅极线以及与所述栅极线连接的栅极；
    覆盖所述栅极线和所述栅极的第一绝缘层；
    在所述第一绝缘层上的有源层；
    在所述第一绝缘层上的有机层；所述有机层中具有通孔，所述通孔的宽度大于所述有源层的宽度，以将所述有源层及其周围的第一绝缘层暴露；
    在所述有机层上的源极、漏极以及与所述源极连接的数据线，在所述有机层上的源极经过由所述通孔暴露的第一绝缘层而延伸至所述有源层的一端之上，在所述有机层上的漏极经过由所述通孔暴露的第一绝缘层而延伸至所述有源层的另一端之上，所述数据线与所述栅极线重叠在一起；
    覆盖所述源极、所述漏极、所述数据线以及所述有源层的第二绝缘层；
    在第二绝缘层中的过孔，所述过孔暴露所述漏极；
    在所述第二绝缘层上的像素电极，所述像素电极通过所述过孔接触所述漏极。
  10. 一种液晶面板，包括对盒设置的彩膜基板以及阵列基板，其中，所述阵列基板的制作方法包括：
    提供一基板；
    在基板上形成栅极线以及与所述栅极线连接的栅极；
    在基板上形成覆盖所述栅极线和所述栅极的第一绝缘层；
    在所述第一绝缘层上形成有源层；
    在所述第一绝缘层上形成有机层；
    在所述有机层中形成通孔，所述通孔的宽度大于所述有源层的宽度，以将所述有源层及其周围的第一绝缘层暴露；
    在所述有机层上形成源极、漏极以及与所述源极连接的数据线；其中，使在所述有机层上的源极经过由所述通孔暴露的第一绝缘层而延伸至所述有源层的一端之上，并使在所述有机层上的漏极经过由所述通孔暴露的第一绝缘层而延伸至所述有源层的另一端之上，所述数据线与所述栅极线重叠在一起；
    在所述有源层上形成覆盖所述源极、所述漏极及所述数据线的第二绝缘层；
    在第二绝缘层中形成过孔；其中，所述过孔暴露所述漏极；在所述有机层中形成通孔；
    在所述第二绝缘层上形成像素电极；其中，所述像素电极通过所述过孔接触所述漏极。
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