WO2018019227A1 - 激光封装方法及激光封装装置 - Google Patents
激光封装方法及激光封装装置 Download PDFInfo
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- WO2018019227A1 WO2018019227A1 PCT/CN2017/094274 CN2017094274W WO2018019227A1 WO 2018019227 A1 WO2018019227 A1 WO 2018019227A1 CN 2017094274 W CN2017094274 W CN 2017094274W WO 2018019227 A1 WO2018019227 A1 WO 2018019227A1
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- laser
- spot
- distribution
- package
- energy distribution
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000009826 distribution Methods 0.000 claims abstract description 125
- 239000000463 material Substances 0.000 claims description 31
- 238000012546 transfer Methods 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 8
- 238000004088 simulation Methods 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 claims description 4
- 239000008393 encapsulating agent Substances 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- 239000005022 packaging material Substances 0.000 abstract description 2
- 230000014509 gene expression Effects 0.000 description 4
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- 238000004364 calculation method Methods 0.000 description 2
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- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 230000008018 melting Effects 0.000 description 1
- ONCZDRURRATYFI-QTCHDTBASA-N methyl (2z)-2-methoxyimino-2-[2-[[(e)-1-[3-(trifluoromethyl)phenyl]ethylideneamino]oxymethyl]phenyl]acetate Chemical compound CO\N=C(/C(=O)OC)C1=CC=CC=C1CO\N=C(/C)C1=CC=CC(C(F)(F)F)=C1 ONCZDRURRATYFI-QTCHDTBASA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133351—Manufacturing of individual cells out of a plurality of cells, e.g. by dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
Definitions
- the present invention relates to a frame packaging technology, and in particular to a laser packaging method and a laser packaging device.
- Generation the meaning of generation, refers to the size of the glass substrate.
- the high-generation production line mainly produces large-size LCD panels of 32 inches or more, which are generally defined as six generations of lines or more, referred to as high-generation lines and high-generation lines.
- the package components become larger and larger, while the narrow bezel (referring to the distance from the edge of the active area to the outermost side of the package, currently achieving a 0.6mm frame) is required for the laser.
- Packaging brings more stringent requirements.
- the commonly used technique is to use a laser spot with a circular flat top energy distribution spot. Since this energy distribution is not uniform, in the laser packaging process, the package material for packaging is not distributed in the non-scanning temperature. Uniform, the specific temperature is highest in the center of the package, and the temperature is lower as it goes to the edge. This temperature difference will introduce thermal stress during the packaging process, which limits the process window, making it more prone to defects such as over-burning caused by excessive center temperature of the package material in actual operation, or due to low temperature at the edge of the package material. The bond ratio is less than the target defect.
- the unit has various characteristic areas in the packaging process, such as the presence or absence of electrodes, material differences, line width differences, etc., and the heat dissipation conditions of the package materials in these characteristic areas are different.
- the conventional spot profile has been fixed by design, and the package is packaged. It cannot be changed, and it is impossible to achieve uniform temperature in all areas including the feature area.
- the M-type distribution spot can change the spot size to control the temperature of the active region
- the common M-type distribution is modulated for the purpose of non-scanning to dose uniformity, and is mostly used for laser welding applications where the heating line width is much larger than the spot size.
- the heating line width is less than or equal to the spot size. Due to the boundary effect of heat conduction, even if the non-scanning upward dose is consistent, the boundary temperature of the package is lower than the temperature of the central region, and the temperature uniformity cannot be agreed. Partial improvement.
- the conventional M-type distribution spot cannot be changed with the feature area, which makes the M-type distribution spot not adaptable to the unit feature area.
- the prior art method still has various problems while improving the package quality, so it is necessary to invent a new method to improve the package quality of the laser package under the premise of reducing the influence of negative factors.
- An object of the present invention is to provide a laser packaging method and a laser packaging device, which can effectively improve package quality, expand a process window, reduce spot size, reduce adverse effects on a heat affected zone, and reduce cost.
- the present invention provides a laser packaging method comprising the following steps:
- Step 1 According to the material of the encapsulant and the packaging parameters, set an initial spot contour distribution and a spot energy distribution for the laser, and establish a heat transfer model of the laser package;
- Step 2 performing a package simulation on the heat transfer model to obtain a temperature distribution of the package material along a non-scanning direction;
- Step 3 determining whether the temperature distribution of the package material along the non-scanning direction meets the uniformity requirement, if yes, perform step 5, otherwise perform step 4;
- Step 4 adjusting the spot contour distribution and/or modulating the spot energy distribution with a custom function to reduce the integrated dose of the spot along the non-scan to the center, and then according to the adjusted spot profile distribution and/or the modulated spot energy
- the distribution re-establishes the heat transfer model of the laser package, returning to step 2;
- Step 5 In the actual laser packaging, the laser is controlled by the current spot contour distribution and the spot energy distribution.
- step 4 includes adjusting the geometry of the spot such that the spot is low in the middle of the non-scanning integrated dose and high on both sides.
- step 4 further includes: modulating the spot energy distribution with a first custom function for a non-feature region in the laser package scan path, and selecting a feature region in the scan path for the laser package First modulating the spot energy distribution with the first custom function, increasing the spot size, and modulating the spot energy distribution corresponding to the change interval of the spot size by the second custom function to adapt to the Feature area.
- the modulating with the second custom function comprises: dividing a change interval of the spot size into a plurality of sub-intervals at a certain interval, and modulating each sub-function with different custom functions.
- the custom function needs to satisfy the requirement that the modulated spot energy distribution is smaller than the spot energy distribution before modulation.
- the initial spot energy distribution I(r) may be selected as Where P is the laser power and R is the spot radius. (x, y) is the coordinate value of a point in the spot coordinate system.
- the invention also provides a laser packaging device comprising a workpiece stage carrying a package sheet, a laser emitting module, a laser scanning module and a gantry extending above the workpiece stage for carrying the laser scanning module, the characteristics thereof
- the laser packaging device further includes a laser modulation module and a laser controller, wherein the laser controller is designed to meet the low-integration center of the laser spot along the non-scanning direction according to the material and package parameters of the package material of the package sheet.
- the laser modulation module includes a geometrical distribution modulator for modulating a geometry of the spot according to the spot profile distribution.
- the laser modulation module includes an energy distribution modulator for modulating an energy distribution of the spot according to the spot energy distribution.
- the laser modulation module includes a size modulator for changing a size of the spot according to the spot contour distribution.
- the geometrical distribution modulator may be selected as an aperture.
- the energy distribution modulator may be a diffractive optical element or a refractive optical element.
- the laser packaging method and the laser packaging device provided by the invention are applicable to various package materials and packaging modes.
- the contour distribution of the spot and/or the spot energy distribution to reduce the integrated dose of the spot along the non-scan to the center the temperature distribution of the package along the non-scan direction satisfies the uniformity requirement, thereby improving the process flexibility and improving the package quality of the laser package;
- the feature area in the package line increase the spot size to adapt to different heat dissipation conditions of the feature area, and adapt it to each special feature. Demand for temperature field conditions in the conquest area.
- FIG. 1 is a schematic flow chart of a laser packaging method provided by the present invention.
- FIG. 2 is a schematic view of a laser packaging device provided by the present invention.
- FIG. 3 is a schematic structural view of a laser modulation module
- 1-laser controller 2-laser transmitting module; 3-laser modulation module; 4-laser scanning module; 5-work table; 6-gantry; 7-base; 30-energy distribution modulator; 31-geometry Modulator; 32-size regulator.
- the invention provides a laser packaging method.
- the schematic diagram of the flow is shown in FIG. 1.
- the laser packaging method includes the following steps:
- step S11 an initial spot profile distribution and a spot energy distribution are set for the laser according to the material and the package parameters of the package material, and a heat transfer model of the laser package is established;
- step S12 the package simulation is performed by using the heat transfer model to obtain a temperature distribution of the package material along a non-scan direction;
- a package line is designed in advance for the package piece to be packaged, and the package material is laid along the package line. It is disposed on the encapsulating sheet, and in actual packaging, the laser is scanned along the preset packaging line to heat the melting material and melt it, thereby achieving bonding between the encapsulating sheets on both sides of the encapsulating material.
- the scanning direction of the laser is called the scanning direction, and the non-scanning direction generally refers to the direction perpendicular to the scanning direction.
- step S13 it is determined whether the temperature distribution of the package material in the non-scanning direction satisfies the uniformity requirement, if yes, step S15 is performed, otherwise step S14 is performed;
- step S14 the spot contour distribution is adjusted and/or the spot energy distribution is modulated by a custom function to reduce the integrated dose of the spot along the non-scan to the center, and then according to the adjusted spot profile distribution and/or the modulated spot.
- the energy distribution re-establishes the heat transfer model of the laser package, and returns to step S12;
- step S15 the laser light is adaptively modulated with the current spot contour distribution and the spot energy distribution during actual laser packaging.
- step S14 includes adjusting the geometry of the spot such that the spot is low in the middle of the non-scanning integrated dose and high on both sides.
- the step S14 further includes: modulating the spot energy distribution by a first custom function for the non-feature area in the package line, and using the first custom function for the feature area in the package line
- the spot energy distribution is modulated, the spot size is increased, and the spot energy distribution corresponding to the change interval of the spot size is modulated by the second custom function to adapt to the feature area.
- the feature area herein refers to a region on the package line that has special requirements on the non-scanning temperature distribution of the package at the corresponding position, for example, adjacent electrodes on the package line or adjacent thereto. Special materials, areas of special line width components, the packaging materials at these feature areas have different heat dissipation requirements. For this purpose, for these feature areas, based on the first custom function modulation spot energy distribution, and then through the change Spot size, and a second custom function to further modulate the spot energy distribution to suit the corresponding requirements.
- the corresponding spot energy distribution of the spot size change interval is modulated by the second custom function, which comprises: dividing the change interval of the spot size into a plurality of sub-intervals at a certain interval, each sub-interval having a different custom function. Modulate the spot energy distribution in the corresponding subinterval.
- the custom function needs to satisfy the requirement that the modulated spot energy distribution is smaller than the spot energy distribution before modulation.
- the initial spot energy distribution I(r) is selected as Where P is the laser power and R is the radius of the laser spot. (x, y) is the coordinate value of a point in the spot coordinate system.
- the present embodiment uses energy distribution modulation for specific material and package parameters, and modulates the energy distribution by the diffractive optical element.
- the spot geometry is not modulated, and is a circular spot. Considering the case of no feature area, the desired spot is obtained.
- the method of contouring includes the following steps:
- step (2) Based on the non-scanning temperature distribution, if the temperature field satisfies the uniformity requirement, the spot profile can be determined; if not, the k value is adjusted and step (2) is repeated.
- the required non-scanning temperature distribution result is finally obtained, and the energy distribution satisfying the required spot is used for the actual laser encapsulation.
- the amount distribution modulation, modulating the energy distribution by the diffractive optical element, and using the spot size modulation to modulate the spot size with the pupil, the method of obtaining the desired spot profile includes the following steps:
- R 2 and R 3 are the spot radii after the dimensional change, k 1 , k 2 , k i-1 ...
- R 2 , R 3 are the spot size adjustment amounts, and subintervals are defined by R 2 , R 3 ..., for example, R 2 ⁇ r>R is the first subinterval, and the spot energy distribution corresponding to the first subinterval is modulated by a custom function f 2 (r); R 3 ⁇ r > R 2 is a second subinterval, the second sub The spot energy distribution corresponding to the interval is modulated by a custom function f 3 (r);
- f 1 (r) expression proceeds to step (4); if not, adjusts the function parameter a i and repeats step (2) to gradually approximate the method, and finally obtains the required non-scanning temperature distribution result;
- the laser packaging device includes a workpiece stage 5 carrying a package sheet, a laser emitting module 2, a laser scanning module 4, and a spanning device.
- the gantry 6 carrying the laser scanning module 4 above the workpiece stage 5, wherein the laser packaging device further comprises a laser controller 1 and a laser modulation module 3, the laser controller 1 according to the encapsulating material of the encapsulating sheet
- the material and package parameters are designed to satisfy the spot contour distribution and/or the spot energy distribution of the spot with a low center of the integrated dose center in the non-scanning direction, and control the laser modulation module 3 according to the spot contour distribution and/or the spot energy distribution.
- the laser light emitted by the laser emitting module 2 is modulated.
- the laser modulator 3 includes an energy distribution modulator 30, a geometric distribution modulator 31, and a size modulator 32, which may be selected as a diffractive optical element or a refractive optical element. Modulating an energy distribution of the spot according to the spot energy distribution; the geometric distribution modulator 31 may be selected as an aperture, modulating a geometry of the spot according to the spot profile distribution; the size modulator 32 is configured according to the The spot contour distribution changes the size of the spot.
- the laser packaging device further includes a base 7.
- the laser modulator 3 has a first direction of freedom
- the gantry 6 can provide a second direction free.
- the first direction is perpendicular to the second direction
- the workpiece stage 5 has a third direction of freedom and a degree of freedom of rotation on the base 7.
- a plurality of laser modulators 3 can be simultaneously disposed in the laser packaging device, thereby enabling multiple packages to simultaneously improve the yield and satisfy the packaging requirements for the oversized packages.
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
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Priority Applications (2)
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KR1020197002532A KR102191003B1 (ko) | 2016-07-29 | 2017-07-25 | 레이저 패키징 방법 및 레이저 패키징 장치 |
JP2019500514A JP6764993B2 (ja) | 2016-07-29 | 2017-07-25 | レーザーパッケージング方法及びレーザーパッケージング装置 |
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CN201610614574.7A CN107665826B (zh) | 2016-07-29 | 2016-07-29 | 激光封装方法及激光封装装置 |
CN201610614574.7 | 2016-07-29 |
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PCT/CN2017/094274 WO2018019227A1 (zh) | 2016-07-29 | 2017-07-25 | 激光封装方法及激光封装装置 |
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JP (1) | JP6764993B2 (ko) |
KR (1) | KR102191003B1 (ko) |
CN (1) | CN107665826B (ko) |
TW (1) | TWI614960B (ko) |
WO (1) | WO2018019227A1 (ko) |
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CN105319859A (zh) * | 2014-07-29 | 2016-02-10 | 上海微电子装备有限公司 | 提高光刻机可用焦深的方法 |
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JP3855563B2 (ja) * | 1999-10-29 | 2006-12-13 | 三菱電機株式会社 | レーザ装置およびレーザ加工方法 |
US7371143B2 (en) * | 2004-10-20 | 2008-05-13 | Corning Incorporated | Optimization of parameters for sealing organic emitting light diode (OLED) displays |
US8247730B2 (en) * | 2007-09-28 | 2012-08-21 | Corning Incorporated | Method and apparatus for frit sealing with a variable laser beam |
CN105583526B (zh) * | 2008-03-21 | 2018-08-17 | Imra美国公司 | 基于激光的材料加工方法和系统 |
KR101243920B1 (ko) * | 2010-01-07 | 2013-03-14 | 삼성디스플레이 주식회사 | 기판 밀봉에 사용되는 레이저 빔 조사 장치, 기판 밀봉 방법, 및 유기 발광 디스플레이 장치의 제조 방법 |
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CN107665826B (zh) | 2019-11-26 |
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