WO2018004102A1 - Transparent conductor and display device including same - Google Patents

Transparent conductor and display device including same Download PDF

Info

Publication number
WO2018004102A1
WO2018004102A1 PCT/KR2017/001449 KR2017001449W WO2018004102A1 WO 2018004102 A1 WO2018004102 A1 WO 2018004102A1 KR 2017001449 W KR2017001449 W KR 2017001449W WO 2018004102 A1 WO2018004102 A1 WO 2018004102A1
Authority
WO
WIPO (PCT)
Prior art keywords
transparent conductor
resin
weight
matrix
transparent
Prior art date
Application number
PCT/KR2017/001449
Other languages
French (fr)
Korean (ko)
Inventor
신동명
김도영
강경구
김영훈
한지영
황오현
Original Assignee
삼성에스디아이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성에스디아이 주식회사 filed Critical 삼성에스디아이 주식회사
Publication of WO2018004102A1 publication Critical patent/WO2018004102A1/en

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays

Definitions

  • the present invention relates to a transparent conductor and a display device including the same.
  • the metal nanowire-containing transparent conductor may be included in a touch screen panel of a display device.
  • the metal nanowire-containing transparent conductor has a structure in which a conductive network formed of metal nanowires is impregnated into the matrix.
  • Metal nanowire-containing transparent conductors can be used in display devices such as touch panels by patterning.
  • a pattern can be directly formed in a transparent conductive layer by laser irradiation.
  • Wet etching includes forming a photoresist over a transparent conductive layer and developing after UV irradiation.
  • a photoresist As the photoresist, a liquid photoresist or a film type photoresist may be used. Film type photoresists are expensive but have high productivity because they can etch transparent conductors in a roll-to-roll process.
  • the problem to be solved by the present invention is to provide a transparent conductor that can be patterned without the use of a separate photoresist, excellent in productivity, and excellent in pattern formation ability.
  • Another problem to be solved by the present invention is to provide a transparent conductor in which a pattern is formed only by development and cleaning without performing etching liquid treatment and cleaning.
  • Another problem to be solved by the present invention is to provide a transparent conductor including a transparent conductive layer that is excellent in adhesion to the substrate layer and is not affected by development and / or cleaning during patterning and does not peel off from the substrate layer. .
  • Another object of the present invention is to provide a transparent conductor having excellent optical transparency and low sheet resistance.
  • the transparent conductor of the present invention includes a base layer and a transparent conductive layer formed on the base layer, wherein the transparent conductive layer includes a metal nanowire and a matrix impregnated with the metal nanowire, and the matrix is an inorganic hollow particle. And a fluorine-containing monomer or an oligomer thereof, a photosensitive resin, a crosslinking agent and an initiator.
  • the display device of the present invention may include the transparent conductor of the present invention.
  • the present invention can be patterned without the use of a separate photoresist to provide a highly sensitive transparent conductor having excellent productivity and excellent pattern forming ability.
  • the present invention provides a transparent conductor in which a pattern is formed only by development and cleaning without performing etching liquid treatment and cleaning.
  • the present invention provides a transparent conductor including a transparent conductive layer that is excellent in adhesion to a substrate layer and is not affected by development or cleaning during patterning and is not peeled from the substrate layer.
  • the present invention provides a transparent conductor excellent in optical transparency and low in sheet resistance.
  • FIG. 1 is a cross-sectional view of a transparent conductor according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of a patterning process of a transparent conductor according to an embodiment of the present invention.
  • FIG 3 is a cross-sectional view of a transparent conductor according to another embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of a display device according to an embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of a display device according to another embodiment of the present invention.
  • (meth) acryl refers to acrylic and / or methacryl.
  • spect ratio means the ratio (L / d) of the longest length L of the metal nanowire to the shortest diameter d of the cross section of the metal nanowire.
  • FIGS. 1 and 2 are cross-sectional views of a transparent conductor according to an embodiment of the present invention.
  • 2 is a schematic view showing a patterning process of a transparent conductor according to an embodiment of the present invention.
  • the transparent conductor 100 may include a base layer 110 and a transparent conductive layer 120.
  • the base layer 110 may support the transparent conductive layer 120 and protect the transparent conductive layer 120.
  • the substrate layer 110 may include a resin film having a light transmittance of about 85% to about 100%, more specifically about 90% to about 99% at a wavelength of 550 nm. In this range, the optical properties of the transparent conductor can be improved.
  • the resin is a polyester, polyolefin, polysulfone, polyimide, silicone, polystyrene, polyacryl, polyvinyl chloride resin, including polycarbonate, cyclic olefin polymer, polyethylene terephthalate, polyethylene naphthalate, etc. It may include one or more, but is not limited thereto.
  • the base layer 110 may have a thickness of about 10 ⁇ m to about 200 ⁇ m, specifically about 30 ⁇ m to about 150 ⁇ m, and more specifically about 30 ⁇ m to about 100 ⁇ m. In the above range, the base layer can be used for the transparent conductor. 1 shows that the base layer 110 is a single layer, but the base layer may be a multilayer, and although not shown in FIG. 1, a functional layer may be formed on the base layer 110.
  • the functional layer provides hard coating, anti-corrosion, anti-reflection, adhesion enhancement, oligomer elution function, and the like, and may be formed as a separate layer independently of the base layer or one surface of the base layer to be a functional layer. .
  • the transparent conductive layer 120 is formed on the base layer 110, and may provide conductivity and flexibility to the transparent conductor 100.
  • the transparent conductive layer 120 may be formed directly on the base layer 110.
  • the transparent conductive layer 120 may include a metal nanowire 121 and a matrix 122 impregnated with the metal nanowire 121.
  • 1 illustrates a case in which the metal nanowires are completely impregnated with the transparent conductive layer 120, but the present invention is not limited thereto.
  • the metal nanowires may be partially exposed to the outside of the transparent conductive layer 120.
  • the metal nanowires 121 are completely impregnated with the transparent conductive layer 120 as shown in FIG. 1, the oxidation of the metal nanowires may be reduced, thereby lowering the sheet resistance of the transparent conductor 100.
  • the metal nanowires 121 may provide conductivity to the transparent conductor by forming a conductive network. Since the metal nanowires 121 have a nanowire shape, the metal nanowires 121 may provide flexibility and flexibility to the transparent conductor. The metal nanowires 121 may have an aspect ratio of about 10 to about 5,000. Within this range, a high conductive network can be realized even at low metal nanowire densities, and the sheet resistance of the transparent conductor can be lowered. Specifically, the metal nanowires may have an aspect ratio of about 500 to about 1,000, more specifically about 500 to about 700.
  • the metal nanowires may have a cross-sectional diameter greater than about 0 nm and up to about 100 nm, specifically about 10 nm to about 100 nm, more specifically about 10 nm to about 30 nm. In the above range, it is possible to have a high aspect ratio to increase the conductivity of the transparent conductor and lower the sheet resistance.
  • the metal nanowires may have a longest length of about 10 ⁇ m or more, specifically about 10 ⁇ m to about 50 ⁇ m. In the above range, it is possible to have a high aspect ratio to increase the conductivity of the transparent conductor and lower the sheet resistance.
  • the metal nanowires may be formed of a metal comprising one or more of silver, copper, aluminum, nickel, and gold.
  • the metal nanowires 121 may contain about 40 wt% to about 80 wt%, specifically about 50 wt% to about 70 wt% of the transparent conductive layer 120, for example about 40, 45, 50, 55, 60, 65, 70, 75, 80% by weight may be included. Within this range, it is possible to increase the conductivity of the transparent conductor.
  • the matrix 122 may be formed on the base layer 110 to strengthen the bond between the base layer 110 and the metal nanowires 121.
  • the matrix 122 may impregnate the conductive network of the metal nanowires 121 to prevent oxidation of the metal nanowires, thereby preventing an increase in the sheet resistance of the transparent conductor.
  • the matrix 122 may increase optical characteristics, chemical resistance, solvent resistance, durability (reliability), etching resistance, and the like of the transparent conductor.
  • the matrix 122 may be a single layer formed of a composition for a matrix including an inorganic hollow particle, a fluorine-containing monomer or an oligomer thereof, a photosensitive resin, a crosslinking agent, and an initiator.
  • the transparent conductor 100 according to the present embodiment may be patterned without using a separate photoresist and thus may have high productivity.
  • a mask pattern having a desired pattern may be disposed on the transparent conductor 100 according to the present embodiment, and UV may be irradiated.
  • the amount of UV radiation can be changed depending on the thickness of the matrix, the material of the matrix, and the like. UV irradiation can form a portion A to which UV is exposed and a portion B to which UV is not exposed in the matrix.
  • the transparent conductor is developed and cleaned to remove the matrix of the unexposed portion.
  • the curing and the hard baking are performed to prepare a transparent conductor having a desired pattern.
  • the etchant may be used as a mixture of nitric acid, acetic acid, phosphoric acid, Al etchant of Transene, but is not limited thereto.
  • the transparent conductor 100 When the transparent conductor 100 is patterned by adding an etching solution treatment, the transparent conductor 100 may be well patterned even when the concentration of the etchant is diluted. However, pattern formation may be completed only by image development and cleaning, without performing etching liquid treatment and cleaning.
  • the transparent conductive layer 120 is excellent in adhesion to the substrate layer 110 and is not affected by development, cleaning, etc. during patterning, and thus may not be peeled from the substrate layer.
  • the inorganic hollow particles and the fluorine-containing monomer or the oligomer thereof can improve the optical properties of the transparent conductive layer, lower the haze of the transparent conductor and increase the light transmittance.
  • the transparent conductor 100 may have a haze of about 1.5% or less, specifically about 0% to about 1.5% at a wavelength of 550nm.
  • the transparent conductor 100 may have a total light transmittance of about 90% or more, specifically about 90% to about 99% in a visible light region, for example, a wavelength of 400 nm to 700 nm. In the above range, good transparency can be used as a transparent conductor.
  • the inorganic hollow particles and the fluorine-containing monomer or the oligomer thereof together with the following photosensitive resin affect the pattern formability of the transparent conductive layer, thereby improving the pattern forming ability of the transparent conductive layer and increasing the adhesion to the substrate layer. It is possible to prevent the transparent conductive layer from being peeled off from the base layer even by developing or washing.
  • the inorganic hollow particles may have a refractive index of about 1.4 or less, specifically about 1.30 to about 1.40, about 1.33 to about 1.38.
  • the average particle diameter (D50) of the inorganic hollow particles may be about 100 nm or less, specifically about 30 nm to about 100 nm, specifically about 40 nm to about 70 nm. It may be included in the matrix in the above range, it may be advantageous to apply as a transparent conductive layer.
  • Inorganic hollow particles are silica, mullite, alumina, silicon carbide (SiC), MgO-Al 2 O 3 -SiO 2 , Al 2 O 3 -SiO 2 , MgO-Al 2 O 3 -SiO 2 -LiO 2 Or mixtures thereof, which may be surface treated.
  • the fluorine-containing monomer or oligomer thereof may include a fluorine-containing (meth) acrylic monomer or an oligomer thereof.
  • the fluorine-containing monomer may be Kyoeisha LINC series (example LINC-3A), and the oligomer may be DAIKIN Corporation OPTOOL series (example AR-100).
  • the inorganic hollow particles and the fluorine-containing monomers or oligomers thereof may each be included by themselves, or may be included in a solution containing both of them.
  • the solution may further include an initiator, a (meth) acrylic monomer, and a solvent such as methyl isobutyl ketone.
  • the solution containing the entire inorganic hollow particles and the fluorine-containing monomer or the oligomer thereof, or the entire inorganic hollow particles and the fluorine-containing monomer or the oligomer thereof may have a refractive index of about 1.42 or less, specifically about 1.33 to about 1.38. In the above range, the optical properties of the transparent conductive layer may be good.
  • the solution may include, but is not limited to, a commercially available product such as A-2505 (Pelnox), OPSTAR TU series (JSR), and the like.
  • the inorganic hollow particles and the fluorine-containing monomer or the entirety of the oligomers thereof are from about 10% to about 50% by weight based on solids in the matrix composition, for example about 10, 11, 12, 13, 14, 15, 16, 17, 18 , 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43 , 44, 45, 46, 47, 48, 49, 50% by weight, specifically about 20% to about 40% or about 30% to about 50% by weight.
  • solid content means the entirety of the matrix composition except for the solvent.
  • the photosensitive resin can be cured to form a matrix and pattern the transparent conductor by UV exposure.
  • the photosensitive resin may include a positive or negative photosensitive resin upon UV irradiation.
  • the photosensitive resin has a weight average molecular weight of about 5000 g / mol to about 10000 g / mol such as 5000, 5500, 6000, 6500, 7000, 7500, 8000, 8500, 9000, 9500, 10000 g / mol, specifically about 5500 g / mol About 9000 g / mol. In the above range, there may be an effect that the pattern formation is good and the adhesion of the matrix is improved.
  • the photosensitive resin is a general photosensitive resin for photoresists, and includes novolacs such as phenol novolak resins, cresol novolak resins, naphthol novolak resins, novolak resins using various phenolic compounds, and alkoxy group-containing aromatic ring modified novolak resins Resin, aromatic hydrocarbon formaldehyde resin modified phenol resin, dicyclopentadiene phenol addition resin, phenol aralkyl resin, naphthol aralkyl resin, trimethylol methane resin, tetraphenylolethane resin, biphenyl modified phenol resin, biphenyl modified naphthol Resins, aminotriazine-modified phenolic resins, and the like.
  • a novolak resin may be preferable at the point which is excellent in pattern property at the time of mixing with an inorganic hollow particle and a fluorine-containing monomer or its oligomer.
  • the photosensitive resin is about 30% to about 65% by weight based on solids in the composition for the matrix, for example about 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43 , 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65% by weight, specifically about 40 wt% to about 60 wt%.
  • the pattern is formed by exposure, development, cleaning, etc., the adhesion of the matrix, the coating property can be excellent and there is no effect on the conductivity of the metal nanowires.
  • the crosslinking agent can cure the photosensitive resin, the fluorine-containing monomer or the oligomer thereof.
  • the crosslinking agent is a compound containing a double bond such as melamine compound, guanamine compound, glycoluril compound, urea compound, resol resin, epoxy compound, isocyanate compound, azide compound, alkenyl ether group, acid Anhydride compounds, oxazoline compounds, and the like.
  • the melamine-based compound can increase the curing rate of the composition for the matrix when mixed with the inorganic hollow particles and the fluorine-containing monomer or oligomer-containing solution, and facilitate the pattern formation of the transparent conductor.
  • the melamine-based compound is, for example, hexamethylolmelamine, hexamethoxymethylmelamine, a compound in which 1 to 6 methylol groups of hexamethylolmelamine are methoxymethylated, hexamethoxyethylmelamine, hexaacyloxymethylmelamine, One to six of the methylol groups of hexamethylolmelamine may contain acyloxymethylated compounds and the like.
  • the guanamine compound is a compound in which 1 to 4 methylol groups are methoxymethylated of tetramethylolguanamine, tetramethoxymethylguanamine, tetramethoxymethylbenzoguanamine, and tetramethylolguanamine.
  • the compound may include acyloxymethylated one to four methylol groups.
  • the glycoluril compound may be 1,3,4,6-tetrakis (methoxymethyl) glycoluril, 1,3,4,6-tetrakis (butoxymethyl) glycoluril, 1,3,4,6- Tetrakis (hydroxymethyl) glycoluril and the like.
  • the urea compound is 1,3-bis (hydroxymethyl) urea, 1,1,3,3-tetrakis (butoxymethyl) urea, 1,1,3,3-tetrakis (methoxymethyl) urea Etc. can be mentioned.
  • the said resol resin is phenolic hydroxyl group containing compounds, such as bisphenol, naphthol, dihydroxy naphthalene, such as alkyl phenol, phenyl phenol, resorcinol, biphenyl, bisphenol A, bisphenol F, such as phenol, cresol, and xylenol;
  • bisphenol, naphthol, dihydroxy naphthalene such as alkyl phenol, phenyl phenol, resorcinol, biphenyl, bisphenol A, bisphenol F, such as phenol, cresol, and xylenol
  • the polymer obtained by making an aldehyde compound react on alkaline catalyst conditions is mentioned.
  • Examples of the epoxy compound include tris (2,3-epoxypropyl) isocyanurate, trimethylol methane triglycidyl ether, trimethylolpropane triglycidyl ether, triethylol ethane triglycidyl ether, and the like.
  • Examples of the isocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate, cyclohexane diisocyanate and the like.
  • azide compound examples include 1,1'-biphenyl-4,4'-bisazide, 4,4'-methylidenebisazide, 4,4'-oxybisazide and the like.
  • Compounds containing double bonds such as alkenyl ether groups include ethylene glycol divinyl ether, triethylene glycol divinyl ether, 1,2-propanediol divinyl ether, 1,4-butanediol divinyl ether, tetramethylene glycol di Vinyl ether, neopentyl glycol divinyl ether, trimethylol propane trivinyl ether, hexanediol divinyl ether, 1, 4- cyclohexanediol divinyl ether, pentaerythritol trivinyl ether, pentaerythritol tetravinyl ether, sorbitol tetra Vinyl ether, sorbitol pentavinyl
  • the acid anhydride compounds include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, 3,3 ', 4,4'-benzophenonetetracarboxylic dianhydride, biphenyltetracarboxylic dianhydride, 4,4'-(iso Aromatic acid anhydrides such as propylidene) diphthalic anhydride and 4,4 '-(hexafluoroisopropylidene) diphthalic anhydride; And alicyclic carboxylic anhydrides such as tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, endomethylenetetrahydrophthalic anhydride anhydrous decenylic acid, and trialkyltetrahydrophthalic anhydride. .
  • Crosslinking agent is about 1% to about 10% by weight, for example about 1, 2, 3, 4, 5, 6, 7, 8, 9, 10% by weight, specifically about 1% by weight, based on solids in the composition for the matrix To about 5% by weight.
  • the process margin of the pattern formation can be controlled by controlling the degree of crosslinking of the photosensitive resin and the pattern formation can be facilitated.
  • the initiator is a curing agent for the photosensitive resin, the fluorine-containing monomer or the oligomer thereof, and may include a conventional initiator known to those skilled in the art.
  • the initiator may include photosensitive initiators such as initiators that generate active radicals and initiators that initiate cationic polymerization.
  • Initiators include oxime compounds such as halogenated hydrocarbon derivatives (for example, derivatives having a triazine skeleton, derivatives having an oxadiazole skeleton), acylphosphine compounds such as acylphosphine oxide, hexaarylbiimidazole, and oxime derivatives.
  • an oxime derivative is preferable at the point which is easy to form a pattern at low exposure amount.
  • Oxime derivatives include 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -3-cyclopentylpropanone-1- (O-acetyloxime), 3-benzoyloxyimido Butan-2-one, 3-acetoxyiminobutan-2-one, 3-propionyloxyiminobutan-2-one, 2-acetoxyiminopentan-3-one, 2-acetoxyimino-1-phenylpropane -1-one, 2-benzoyloxyimino-1-phenylpropan-1-one, 3- (4-toluenesulfonyloxy) iminobutan-2-one, 2-ethoxycarbonyloxyimino-1-phenyl Propan-1-one and the like.
  • the initiator is about 1% to about 15% by weight based on solids in the composition for the matrix, for example about 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15 weight percent, specifically about 1 weight percent to about 10 weight percent. Within this range, there may be an effect of facilitating pattern formation even at low exposure doses and improving adhesion of the matrix layer in the post-curing process.
  • composition for the matrix may further include at least one of an adhesion promoter and an antioxidant.
  • An adhesion promoter may increase the adhesion of the transparent conductive layer to the base layer to reduce the thickness of the transparent conductive layer and increase the reliability of the transparent conductor.
  • the adhesion promoter may include one or more of a silane coupling agent, a monofunctional (meth) acrylic monomer, and a bifunctional (meth) acrylic monomer. These may be included alone or in combination of two or more.
  • Silane coupling agents are commonly known silane coupling agents, such as 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltriethoxysilane, 3-glycid Silane coupling agents having an epoxy group such as oxypropyltrimethoxysilane; Polymerizable unsaturated group-containing silane coupling agents such as vinyltrimethoxysilane; Amino group-containing silane coupling agents such as 3-aminopropyltrimethoxysilane and 3-aminopropyltriethoxysilane; And 3-chloropropyltrimethoxysilane.
  • Monofunctional or bifunctional (meth) acrylic monomers are mono- or difunctional (meth) acrylic monomers of C3 to C20 polyhydric alcohols, including isobornyl (meth) acrylate, cyclopentyl (meth) acrylate, Cyclohexyl (meth) acrylate, trimethylolpropanedi (meth) acrylate, ethylene glycol di (meth) acrylate, neopentylglycoldi (meth) acrylate, hexanedioldi (meth) acrylate, cyclodecane dimethanol And may comprise one or more of di (meth) acrylates.
  • the adhesion promoter may use a silane coupling agent having an epoxy group as the silane coupling agent.
  • adhesiveness can be improved even in the thickness of thin transparent conductive layer (for example, transparent conductive layer thickness of about 2 micrometers or less).
  • transparent conductive layer thickness for example, transparent conductive layer thickness of about 2 micrometers or less.
  • the adhesiveness of a transparent conductive layer can be improved.
  • Adhesion promoters are from about 5% to about 20% by weight in the composition for a solids based matrix for example about 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20% by weight, specifically about 5% to about 15% by weight. Within this range, the reliability and conductivity of the transparent conductor can be improved, and the adhesion of the transparent conductive layer can be improved.
  • Antioxidants can prevent oxidation of the network of metal nanowires.
  • the antioxidant may include at least one of triazole-based, triazine-based, phosphite-based phosphorus, HALS (Hinder amine light stabilizer), phenol-based, metal acetylacetonate-based antioxidant. These may be included alone or in combination of two or more.
  • the phosphorus antioxidant is tris (2,4-di-tert-butylphenyl) phosphite
  • the phenolic antioxidant is pentaerythritol tetrakis (3- (3,5-di-tert-butyl-4-hydrate Oxyphenyl) propionate).
  • HALS-based antioxidants include bis (2,2,6,6-tetramethyl-4-piperidyl) sebacate, bis (2,2,6,6-tetramethyl-4-piperidinyl) sebacate, bis (2,2,6,6-tetramethyl-5-piperidinyl) sebacate, dimethylsuccinate air with 4-hydroxy-2,2,6,6-tetramethyl-1-piperidine-ethanol Coalescing, 2,4-bis [N-butyl-N- (1-cyclohexyloxy-2,2,6,6-tetramethylpiperidin-4-yl) amino] -6- (2-hydroxy Ethylamine) -1,3,5-triazine and the like, but is not limited thereto.
  • Metal acetylacetonate-based antioxidants may include, but are not limited to, tris (acetylacetonato) iron (III), tris (acetylacetonato) chrome (III), and the like.
  • the antioxidant is about 0.01% to about 10% by weight in the composition for a matrix based on solids, for example about 0.01, 0.05, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10% by weight, specifically About 0.5% to about 7% by weight. In the above range, it is possible to prevent the oxidation of the metal nanowire, high pattern uniformity of the patterned transparent conductor and may be advantageous for the implementation of a fine pattern.
  • the matrix composition may further include a solvent.
  • the solvent may include one or more of ketone solvents such as propylene glycol monomethyl ether acetate (PGEMA) and methyl isobutyl ketone, and alcohol solvents such as isopropyl alcohol and ethanol.
  • ketone solvents such as propylene glycol monomethyl ether acetate (PGEMA) and methyl isobutyl ketone
  • alcohol solvents such as isopropyl alcohol and ethanol.
  • the composition for the matrix may further include an additive.
  • the additives may include surfactants such as fluorine-based surfactants, antistatic agents, ultraviolet absorbers, viscosity modifiers, heat stabilizers, dispersants, thickeners and the like.
  • the composition for the matrix may have a viscosity of about 0.1 cP to about 20 cP at 25 ° C. In the above range, it is possible to improve the coating property of the composition for the matrix, and to be uniformly coated with a thin film so that the transparent conductive layer has uniform physical and chemical properties.
  • the transparent conductive layer 120 has a thickness of about 1 ⁇ m or more and about 2 ⁇ m or less, for example, about 1, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2 ⁇ m, more specifically about 1 ⁇ m. And about 1.7 ⁇ m or less. In the above range, it can be used in the optical display device, the pattern forming ability is good, the adhesion to the substrate layer is good and the optical properties are excellent.
  • the transparent conductor 100 may have a sheet resistance of about 100 ⁇ s / ⁇ or less, specifically about 50 ⁇ s / ⁇ or less, and more specifically about 20 ⁇ s / ⁇ to about 50 ⁇ s / ⁇ , measured by a 4-probe or non-contact sheet resistance meter. have. In the above range, the sheet resistance is low, it can be used as an electrode film for a touch panel, it can be applied to a large area touch panel.
  • the thickness of the transparent conductor 100 may be about 10 ⁇ m to about 250 ⁇ m, specifically about 50 ⁇ m to about 200 ⁇ m. In the above range, it can be used as a transparent electrode film including a film for a touch panel, it can be used as a transparent electrode film for a flexible touch panel.
  • the transparent conductor 100 may be used as a transparent electrode film of a touch panel, an E-paper, or a solar cell, in the form of a film, and patterned by etching or the like.
  • FIG. 3 is a cross-sectional view of a transparent conductor according to another embodiment of the present invention.
  • the transparent conductor 100 ′ of the present embodiment is except that the transparent conductive layer 120 ′ is patterned into a transparent conductive layer 120 a and a non-conductive layer 120 b having no conductivity. It is substantially the same as the transparent conductor 100 of one embodiment of the present invention.
  • the transparent conductive layer 120 ′ may be formed by patterning the transparent conductive layer 120 according to an embodiment of the present invention. Specifically, patterning is the same as described above with reference to FIG. 2. Further, in order to prevent the metal nanowires of the pattern layer cured from the etching solution during etching, the etching solution may be used at low concentration or the etching time may be shortened.
  • FIG. 4 is a cross-sectional view of an optical display device according to an exemplary embodiment of the present invention.
  • the optical display device 200 may include a display unit 210, a polarizer 220, a transparent electrode body 230, a window film 240, and an adhesive layer 250.
  • the transparent electrode body 230 may be formed of a transparent conductor according to embodiments of the present invention.
  • 4 illustrates a structure in which the display unit 210, the polarizing plate 220, the transparent electrode body 230, and the window film 240 are stacked in this order, but the display unit 210, the transparent electrode body 230, The polarizer 220 and the window film 240 may be stacked in the order of the structure.
  • the display unit 210 is for driving the optical display device 200 and may include an optical element including a substrate and an OLED, an LED, or an LCD element formed on the substrate.
  • the display unit 210 may include a lower substrate, a thin film transistor, an organic light emitting diode, a planarization layer, a protective film, an insulating film.
  • the display unit 210 may include an upper substrate, a lower substrate, a liquid crystal layer positioned between the upper substrate and the lower substrate, and a color filter formed on at least one of the upper substrate and the lower substrate. 4 illustrates a structure in which the display unit 210 and the transparent electrode body 230 are separately stacked, but the transparent electrode body 230 may be formed inside the display unit.
  • the polarizing plate 220 may be formed on the display unit 210 to implement polarization of internal light or prevent reflection of external light to implement a display or improve contrast ratio of the display.
  • the polarizer 220 may be a polarizer alone.
  • the polarizing plate 220 may include a polarizer and a protective film formed on one or both sides of the polarizer.
  • a polarizer may be further formed below the display unit 210 to further improve the contrast ratio of the display.
  • the polarizer may be formed on the display unit 210 by an adhesive layer.
  • the transparent electrode body 230 may be formed on the polarizing plate 220, and may generate an electrical signal by detecting a change in capacitance generated when the transparent electrode body 230 is touched by contact or the like.
  • the transparent electrode body 230 may include a base electrode 110, a first electrode 231 formed on one surface of the base layer 110, a second electrode 232, and a third electrode formed on the other side of the base layer 110 ( 233 and the fourth electrode 234. 4 illustrates a structure in which the third electrode 233, the fourth electrode 234, the base layer 110, the first electrode 231, and the second electrode 232 are stacked in the order of the substrate layer 110. ) / Third electrode 233 and fourth electrode 234 / base layer 110 / first electrode 231 and second electrode 232 in this order.
  • the window film 240 may be formed on the outermost side of the optical display device 200 to protect the optical display device 200.
  • the window film 240 may be formed of a glass substrate or a flexible plastic substrate.
  • the adhesive layer 250 is formed between the display unit 210 and the polarizing plate 220, between the polarizing plate 220 and the transparent electrode body 230, and between the transparent electrode body 230 and the window film 240.
  • the bonding between the 210, the polarizing plate 220, the transparent electrode body 230, and the window film 240 may be strengthened.
  • the adhesive layer 250 may be formed of a conventional optically transparent adhesive.
  • FIG. 5 is a cross-sectional view of an optical display device according to another exemplary embodiment of the present invention.
  • the transparent electrode body 230 ′ is formed of the base layer 110 and the third electrode 233 formed on one surface of the base layer 110. And a fourth electrode 234, except that the first electrode 231 and the second electrode 232 are further formed on the window film 240 ′ according to the exemplary embodiment of the present invention. Substantially the same as 200).
  • a metal nanowire dispersion is coated on a base layer to form a metal nanowire dispersion layer, a composition for a matrix is coated on the metal nanowire dispersion layer, It may include curing the metal nanowire dispersion layer and the composition for the matrix.
  • the metal nanowire dispersion may contain metal nanowires.
  • the metal nanowire dispersion may further include a solvent to further increase the coating property of the metal nanowire.
  • the solvent may include an organic solvent such as water and alcohol, but is not limited thereto.
  • the metal nanowire dispersion may further include a binder, an initiator, an additive, and the like.
  • the additives can be dispersants, thickeners and the like.
  • the binder may include one or more of a (meth) acrylate-based monofunctional monomer and a (meth) acrylate-based polyfunctional monomer.
  • the dispersant can increase the dispersion of the metal nanowires and the binder.
  • Thickeners can increase the viscosity of the metal nanowire dispersion.
  • the binder, initiator, and additives as a whole can be included from about 0.1% to about 50% by weight, specifically from about 5% to about 45% by weight solids in the metal nanowire dispersion.
  • the optical properties of the transparent conductor may be improved, the contact resistance may be prevented from increasing, and the durability and chemical resistance may be improved.
  • Metal nanowire dispersions can be prepared by mixing the solvent in a metal nanowire-containing solution, such as a commercially available product of Cambrios (eg ClearOhm Ink).
  • composition for a matrix can be formed from the composition for a matrix containing an inorganic hollow particle, a fluorine-containing monomer or an oligomer, photosensitive resin, a crosslinking agent, and an initiator.
  • a transparent conductive layer can be formed. Coating may be performed by bar coating, slot die coating, gravure coating, roll-to-roll coating, but is not limited thereto.
  • the coating thickness may be about 1 ⁇ m or more and about 2 ⁇ m or less, more specifically about 1 ⁇ m or more and about 1.7 ⁇ m or less.
  • Curing can form a transparent conductive layer and can raise the intensity
  • Thermal curing may be performed for about 40 ° C. to about 180 ° C., about 1 minute to about 48 hours.
  • Light curing may be performed with a UV dose of about 50 mJ / cm 2 to about 1,000 mJ / cm 2 .
  • the coating film for transparent conductive layers can be dried, and hardening time can be shortened. Drying may be performed for about 40 ° C. to about 180 ° C., for about 1 minute to about 48 hours.
  • a silver nanowire dispersion was prepared by adding 45 parts by weight of a silver nanowire-containing solution (2 wt% solid content such as Clearohm ink, Cambrios, silver nanowires, etc.) to 55 parts by weight of ultrapure distilled water.
  • a silver nanowire-containing solution (2 wt% solid content such as Clearohm ink, Cambrios, silver nanowires, etc.)
  • Hollow silica and fluorine-containing monomer containing solution (Pelnox, A-2505, hollow silica, containing fluorine-containing monomer and initiator, refractive index: 1.33) 37 parts by weight, solution containing novolak resin with photosensitive resin (Showa Denko, RY-25 ) 13 parts by weight, 34 parts by weight of a solution containing hexamethoxymethyl melamine as a crosslinking agent, a solution containing an oxime ester initiator PBG304 as an initiator (DKSH, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-car 16 parts by weight of bazol-3-yl] -3-cyclopentylpropanone-1- (O-acetyloxime)) and a solvent propylene glycol monomethyl ether acetate were added to the composition for the matrix having a solid content concentration of 1.6% by weight.
  • solvent propylene glycol monomethyl ether acetate were added to the composition for the
  • composition for the matrix included 37% by weight of the total of the hollow silica and the fluorine-containing monomer, 52% by weight of the novolak resin, 3% by weight of hexamethoxymethyl melamine, and 8% by weight of the oxime ester initiator.
  • the prepared silver nanowire dispersion was coated with a spin coater, dried for 90 seconds in an oven at 140 °C, and then the composition for the matrix was coated with a bar coater Thereafter, the transparent conductor was manufactured by drying in an oven at 80 ° C. for 120 seconds to form a transparent conductive layer having a thickness of 1.2 ⁇ m.
  • Example 1 a transparent conductor was manufactured in the same manner except that the thickness of the transparent conductive layer was changed to 1.7 ⁇ m.
  • a silver nanowire-containing solution was prepared in the same manner as in Example 1.
  • Hollow silica and fluorine-containing monomer containing solution (Pelnox, A-2505, hollow silica, containing fluorine-containing monomer and initiator, refractive index: 1.33) 33 parts by weight, solution containing novolak resin with photosensitive resin (Showa Denko, RY-25 ) 11 parts by weight, solution containing hexamethoxymethyl melamine as crosslinking agent, 16 parts by weight, solution containing oxime ester initiator PBG304 as initiator (DKSH, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-car 16 parts by weight of bazol-3-yl] -3-cyclopentylpropanone-1- (O-acetyloxime)), 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane (Shin Yetsu Co., Ltd.) as an adhesion promoter.
  • DKSH 1- [9-ethyl-6- (2-methylbenz
  • composition for the matrix having a solid content concentration of 1.6% by weight.
  • Composition for the matrix is 33% by weight hollow silica and fluorine-containing monomer, 46% by weight novolak resin, 3% by weight hexamethoxymethyl melamine, 8% by weight oxime ester initiator, 2- (3,4-epoxycyclo Hexyl) ethyltrimethoxysilane at 10% by weight.
  • a transparent conductor having a transparent conductive layer with a thickness of 1.1 ⁇ m was prepared in the same manner as in Example 1 using the prepared silver nanowire-containing solution and the composition for a matrix.
  • a silver nanowire-containing solution was prepared in the same manner as in Example 1.
  • composition for the matrix contained 37% by weight of dipentaerythritol hexaacrylate, 52% by weight of novolak resin, 3% by weight of hexamethoxymethyl melamine, and 8% by weight of oxime ester initiator.
  • a transparent conductor having a transparent conductive layer with a thickness of 1.2 ⁇ m was prepared in the same manner as in Example 1 using the prepared silver nanowire-containing solution and the composition for a matrix.
  • a silver nanowire-containing solution was prepared in the same manner as in Example 1.
  • a novolak resin-containing solution Showa Denko, RY-25
  • a solution containing hexamethoxymethyl melamine as a crosslinking agent
  • a solution containing an oxime ester initiator PBG304 as a initiator DKSH, 1- [ 9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -3-cyclopentylpropaneone-1- (O-acetyloxime)
  • DKSH 1- [ 9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -3-cyclopentylpropaneone-1- (O-acetyloxime)
  • solvent propylene glycol monomethyl Etheracetate was added to prepare a matrix composition having a solid concentration of 1.6% by weight.
  • the composition for the matrix contained 89% by weight of novolak resin, 3% by weight of hexamethoxymethyl melamine, and 8% by weight of
  • a transparent conductor having a transparent conductive layer with a thickness of 1.2 ⁇ m was prepared in the same manner as in Example 1 using the prepared silver nanowire-containing solution and the composition for a matrix.
  • Pattern Formability and Adhesiveness 50 mJ / cm 2 using a pattern mask (line width of 30 ⁇ m / line width of non-etching part) having a pattern having a line width of 30 ⁇ m on the transparent conductors of Examples and Comparative Examples.
  • Ultraviolet light exposure was performed. The exposed sample was placed in a 5% aqueous solution of trimethylammonium hydroxide as a developer, developed for 30 seconds, first washed, baked for 3 minutes in a 120 ° C. oven, and then exposed to ultraviolet light at 200 mJ / cm 2 to form a pattern. A layer was formed. The transparent conductor on which the pattern layer was formed was etched at 25 ° C.
  • Al etchant 75% to 85% by weight of an aqueous solution of phosphoric acid at a concentration of 85% by weight, 3% to 10% by weight of a nitric acid solution at a concentration of 70% by weight, 99.7% by weight It was immersed in a mixed solution (Aluminum etchant type A of Transene) of 5% to 20% by weight of an acetic acid solution at a concentration, and etched and washed secondly. The line width of the etching portion of the second washed transparent conductor was observed with an optical microscope (MX-50, Olympus), and the standard deviation of the line width of the formed etching portion was determined.
  • a mixed solution Al etchant type A of Transene
  • Haze and total light transmittance were measured using a haze meter (NDH-2000, NIPPON DENSHOKU) at a wavelength of 400 nm to 700 nm for the transparent conductors of Examples and Comparative Examples with the conductive layer facing the light source. .
  • Sheet resistance The sheet resistance was measured using the non-contact sheet resistance measuring instrument (EC-80P, NAPSON) about the transparent conductor of an Example and a comparative example. Sheet resistance was measured for the unpatterned transparent conductive layer.
  • Example 1 include include Without Without 1.2 ⁇ ⁇ 1.37 91.23 25.90
  • Example 2 include include Without Without 1.7 ⁇ ⁇ 1.33 91.16 25.69
  • Example 3 include include Without include 1.1 ⁇ ⁇ 1.39 91.19 26.26 Comparative Example 1 Without include include Without 1.2 ⁇ ⁇ 1.60 89.21 24.90 Comparative Example 2 Without include Without Without 1.2 ⁇ X 1.59 88.92 25.50
  • the transparent conductor according to the present embodiment can be patterned without a photoresist, thereby providing excellent productivity, excellent pattern forming ability, and excellent adhesion to the substrate layer. It was not affected by the back and the like and did not peel off from the substrate layer. In addition, the transparent conductor according to the present embodiment was excellent in optical characteristics and low in sheet resistance, thereby being excellent in conductivity.
  • the comparative example which does not contain a hollow silica particle and a fluorine-containing monomer was inferior in pattern formation property, and after patterning, the transparent conductive layer peeled off from the base material layer, and was not good in adhesiveness.

Abstract

Provided are a transparent conductor and a display device including the same, the transparent conductor comprising a base layer and a transparent conductive layer formed on the base layer, wherein the transparent conductive layer comprises a metal nanowire and a matrix impregnated with the metal nanowire, and the matrix is made of a matrix composition comprising inorganic hollow particles, a fluorine-containing monomer or oligomer thereof, a photosensitive resin, a crosslinking agent, and an initiator.

Description

투명 도전체 및 이를 포함하는 디스플레이 장치Transparent conductor and display device including same
본 발명은 투명 도전체 및 이를 포함하는 디스플레이 장치에 관한 것이다.The present invention relates to a transparent conductor and a display device including the same.
금속 나노와이어(nanowire) 함유 투명 도전체는 디스플레이 장치의 터치스크린패널 등에 포함될 수 있다. 금속 나노와이어 함유 투명 도전체는 매트릭스에 금속 나노와이어로 형성된 도전성 네트워크가 함침되어 있는 구조를 갖는다.The metal nanowire-containing transparent conductor may be included in a touch screen panel of a display device. The metal nanowire-containing transparent conductor has a structure in which a conductive network formed of metal nanowires is impregnated into the matrix.
금속 나노와이어 함유 투명 도전체는 패터닝에 의해 터치패널 등 디스플레이 소자에 사용될 수 있다. 레이저 조사에 의해 투명 도전층에 패턴을 직접적으로 형성할 수 있다. 또는, 포토리소그래피로 습식 에칭하는 방법이 있다. 습식 에칭은 포토레지스트를 투명 도전층 위에 형성하고 UV 조사 후 현상하는 공정을 포함한다. 포토레지스트로서 액상의 포토레지스트 또는 필름 타입의 포토레지스트가 사용될 수 있다. 필름 타입의 포토레지스트는 고가이지만 롤-투-롤(roll-to-roll) 공정으로 투명 도전체를 에칭할 수 있어서 생산성이 높다. 그러나, 투명 도전층과 필름 타입의 포토레지스트의 부착성, 현상된 이후 에칭 시 에칭액의 조성에 따른 부착성 등의 문제가 있다. 액상 포토레지스트를 투명 도전층 위에 코팅하고 현상하는 방법이 있으나 롤-투-롤 공정 대비 생산성이 크게 떨어지는 문제점이 있다.Metal nanowire-containing transparent conductors can be used in display devices such as touch panels by patterning. A pattern can be directly formed in a transparent conductive layer by laser irradiation. Alternatively, there is a method of wet etching by photolithography. Wet etching includes forming a photoresist over a transparent conductive layer and developing after UV irradiation. As the photoresist, a liquid photoresist or a film type photoresist may be used. Film type photoresists are expensive but have high productivity because they can etch transparent conductors in a roll-to-roll process. However, there are problems such as adhesion between the transparent conductive layer and the film type photoresist, adhesion depending on the composition of the etching solution during etching after development. There is a method of coating and developing a liquid photoresist on a transparent conductive layer, but there is a problem in that the productivity is significantly reduced compared to a roll-to-roll process.
본 발명의 배경기술은 한국공개특허 제2012-0053724호에 기술되어 있다.Background art of the present invention is described in Korean Patent Laid-Open No. 2012-0053724.
본 발명이 해결하고자 하는 과제는 별도의 포토레지스트 사용없이 패터닝될 수 있어서 생산성이 우수하고, 패턴 형성 능력이 우수한 투명 도전체를 제공하는 것이다.The problem to be solved by the present invention is to provide a transparent conductor that can be patterned without the use of a separate photoresist, excellent in productivity, and excellent in pattern formation ability.
본 발명이 해결하고자 하는 다른 과제는 에칭액 처리 및 세정을 실시하지 않고, 현상, 세정만으로도 패턴 형성이 되도록 하는 투명 도전체를 제공하는 것이다.Another problem to be solved by the present invention is to provide a transparent conductor in which a pattern is formed only by development and cleaning without performing etching liquid treatment and cleaning.
본 발명이 해결하고자 하는 또 다른 과제는 기재층에 대한 부착성이 우수하여 패터닝시 현상 및/또는 세정 등에 영향을 받지 않아서 기재층으로부터 박리되지 않는 투명 도전층을 포함하는 투명 도전체를 제공하는 것이다.Another problem to be solved by the present invention is to provide a transparent conductor including a transparent conductive layer that is excellent in adhesion to the substrate layer and is not affected by development and / or cleaning during patterning and does not peel off from the substrate layer. .
본 발명이 해결하고자 하는 또 다른 과제는 광학적 투명성이 우수하고 면저항이 낮은 투명 도전체를 제공하는 것이다.Another object of the present invention is to provide a transparent conductor having excellent optical transparency and low sheet resistance.
본 발명의 투명 도전체는 기재층 및 상기 기재층 상에 형성된 투명 도전층을 포함하고, 상기 투명 도전층은 금속 나노와이어 및 상기 금속 나노와이어가 함침된 매트릭스를 포함하고, 상기 매트릭스는 무기 중공 입자, 불소 함유 모노머 또는 그의 올리고머, 감광성 수지, 가교제 및 개시제를 포함하는 매트릭스용 조성물로 형성될 수 있다.The transparent conductor of the present invention includes a base layer and a transparent conductive layer formed on the base layer, wherein the transparent conductive layer includes a metal nanowire and a matrix impregnated with the metal nanowire, and the matrix is an inorganic hollow particle. And a fluorine-containing monomer or an oligomer thereof, a photosensitive resin, a crosslinking agent and an initiator.
본 발명의 디스플레이 장치는 본 발명의 투명 도전체를 포함할 수 있다.The display device of the present invention may include the transparent conductor of the present invention.
본 발명은 별도의 포토레지스트 사용없이 패터닝될 수 있어서 생산성이 우수하고, 패턴 형성 능력이 우수한 고감도의 투명 도전체를 제공하였다.The present invention can be patterned without the use of a separate photoresist to provide a highly sensitive transparent conductor having excellent productivity and excellent pattern forming ability.
본 발명은 에칭액 처리 및 세정을 실시하지 않고, 현상, 세정만으로도 패턴 형성이 되도록 하는 투명 도전체를 제공하였다.The present invention provides a transparent conductor in which a pattern is formed only by development and cleaning without performing etching liquid treatment and cleaning.
본 발명은 기재층에 대한 부착성이 우수하여 패터닝시 현상 또는 세정 등에 영향을 받지 않아서 기재층으로부터 박리되지 않는 투명 도전층을 포함하는 투명 도전체를 제공하였다.The present invention provides a transparent conductor including a transparent conductive layer that is excellent in adhesion to a substrate layer and is not affected by development or cleaning during patterning and is not peeled from the substrate layer.
본 발명은 광학적 투명성이 우수하고 면저항이 낮은 투명 도전체를 제공하였다.The present invention provides a transparent conductor excellent in optical transparency and low in sheet resistance.
도 1은 본 발명의 일 실시예에 따른 투명 도전체의 단면도이다.1 is a cross-sectional view of a transparent conductor according to an embodiment of the present invention.
도 2는 본 발명의 일 실시예에 따른 투명 도전체의 패터닝 공정의 모식도이다.2 is a schematic diagram of a patterning process of a transparent conductor according to an embodiment of the present invention.
도 3은 본 발명의 다른 실시예에 따른 투명 도전체의 단면도이다.3 is a cross-sectional view of a transparent conductor according to another embodiment of the present invention.
도 4는 본 발명의 일 실시예에 따른 디스플레이 장치의 단면도이다.4 is a cross-sectional view of a display device according to an embodiment of the present invention.
도 5는 본 발명의 다른 실시예에 따른 디스플레이 장치의 단면도이다.5 is a cross-sectional view of a display device according to another embodiment of the present invention.
첨부한 도면을 참고하여 실시예에 대하여 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 상세히 설명한다. 본 발명은 여러 가지 상이한 형태로 구현될 수 있으며 여기에서 설명하는 실시예에 한정되지 않는다. 도면에서 본 발명을 명확하게 설명하기 위해서 설명과 관계없는 부분은 생략하였으며, 명세서 전체를 통하여 동일 또는 유사한 구성 요소에 대해서는 동일한 도면 부호를 붙였다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. The drawings and description are to be regarded as illustrative in nature and not restrictive. Like reference numerals designate like elements throughout the specification.
본 명세서에서 "상부"와 "하부"는 도면을 기준으로 정의한 것으로서, 시 관점에 따라 "상부"가 "하부"로 "하부"가 "상부"로 변경될 수 있고, "위(on)" 또는 "상(on)"으로 지칭되는 것은 바로 위뿐만 아니라 중간에 다른 구조를 개재한 경우도 포함할 수 있다. 반면, "직접 위(directly on)", "바로 위" 또는 "직접적으로 형성"으로 지칭되는 것은 중간에 다른 구조를 개재하지 않은 것을 의미한다.In the present specification, "upper" and "lower" are defined based on the drawings, and according to a viewpoint, "upper" may be changed to "lower" and "lower" to "upper", and "on" or What is referred to as “on” may include not only the above but also intervening other structures in the middle. On the other hand, what is referred to as "directly on", "directly on" or "directly formed" means not intervening in the other structures.
본 명세서에서 "(메트)아크릴"은 아크릴 및/또는 메타아크릴을 의미한다.As used herein, "(meth) acryl" refers to acrylic and / or methacryl.
본 명세서에서 "종횡비(aspect ratio)"는 금속 나노와이어의 단면의 최단 직경(d)에 대한 금속 나노와이어의 최장 길이(L)의 비(L/d)를 의미한다.As used herein, "aspect ratio" means the ratio (L / d) of the longest length L of the metal nanowire to the shortest diameter d of the cross section of the metal nanowire.
이하, 본 발명의 일 실시예에 따른 투명 도전체를 도 1과 도 2를 참조하여 설명한다. 도 1은 본 발명의 일 실시예에 따른 투명 도전체의 단면도이다. 도 2는 본 발명의 일 실시예에 따른 투명 도전체의 패터닝 공정을 나타낸 모식도이다.Hereinafter, a transparent conductor according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2. 1 is a cross-sectional view of a transparent conductor according to an embodiment of the present invention. 2 is a schematic view showing a patterning process of a transparent conductor according to an embodiment of the present invention.
도 1을 참조하면, 본 발명의 일 실시예에 따른 투명 도전체(100)는 기재층(110), 투명 도전층(120)을 포함할 수 있다.Referring to FIG. 1, the transparent conductor 100 according to an embodiment of the present invention may include a base layer 110 and a transparent conductive layer 120.
기재층(110)은 투명 도전층(120)을 지지하고 투명 도전층(120)을 보호할 수 있다. 기재층(110)은 파장 550nm에서 광 투과율이 약 85% 내지 약 100%, 더 구체적으로 약 90% 내지 약 99%인 수지 필름을 포함할 수 있다. 상기 범위에서, 투명 도전체의 광학 특성이 개선될 수 있다. 구체적으로, 수지는 폴리카보네이트, 시클릭올레핀폴리머, 폴리에틸렌테레프탈레이트, 폴리에틸렌나프탈레이트 등을 포함하는 폴리에스테르, 폴리올레핀, 폴리술폰, 폴리이미드, 실리콘(silicone), 폴리스티렌, 폴리아크릴, 폴리비닐클로라이드 수지 중 하나 이상을 포함할 수 있지만, 이에 제한되지 않는다. 기재층(110)은 두께가 약 10㎛ 내지 약 200㎛, 구체적으로 약 30㎛ 내지 약 150㎛, 더 구체적으로 약 30㎛ 내지 약 100㎛가 될 수 있다. 상기 범위에서, 기재층은 투명 도전체에 사용될 수 있다. 도 1은 기재층(110)이 단일층으로 되어 있으나 기재층은 다중층이 될 수도 있고, 도 1에서 도시되지 않았지만 기재층(110) 상에는 기능층이 형성될 수도 있다. 기능층은 하드 코팅, 부식 방지, 반사 방지, 부착력 증진, 올리고머 용출 방지 기능 등을 제공하는 것으로, 기재층과 독립적으로 별개의 층으로 형성되거나 또는 기재층의 일면이 기능층이 되도록 형성될 수도 있다.The base layer 110 may support the transparent conductive layer 120 and protect the transparent conductive layer 120. The substrate layer 110 may include a resin film having a light transmittance of about 85% to about 100%, more specifically about 90% to about 99% at a wavelength of 550 nm. In this range, the optical properties of the transparent conductor can be improved. Specifically, the resin is a polyester, polyolefin, polysulfone, polyimide, silicone, polystyrene, polyacryl, polyvinyl chloride resin, including polycarbonate, cyclic olefin polymer, polyethylene terephthalate, polyethylene naphthalate, etc. It may include one or more, but is not limited thereto. The base layer 110 may have a thickness of about 10 μm to about 200 μm, specifically about 30 μm to about 150 μm, and more specifically about 30 μm to about 100 μm. In the above range, the base layer can be used for the transparent conductor. 1 shows that the base layer 110 is a single layer, but the base layer may be a multilayer, and although not shown in FIG. 1, a functional layer may be formed on the base layer 110. The functional layer provides hard coating, anti-corrosion, anti-reflection, adhesion enhancement, oligomer elution function, and the like, and may be formed as a separate layer independently of the base layer or one surface of the base layer to be a functional layer. .
투명 도전층(120)은 기재층(110) 상에 형성되며, 투명 도전체(100)에 도전성과 유연성을 제공할 수 있다. 투명 도전층(120)은 기재층(110)에 직접적으로 형성될 수 있다.The transparent conductive layer 120 is formed on the base layer 110, and may provide conductivity and flexibility to the transparent conductor 100. The transparent conductive layer 120 may be formed directly on the base layer 110.
투명 도전층(120)은 금속 나노와이어(121) 및 금속 나노와이어(121)가 함침된 매트릭스(122)를 포함할 수 있다. 도 1은 금속 나노와이어가 투명 도전층(120)에 완전히 함침되는 경우를 예시하나 이에 제한되는 것은 아니며, 금속 나노와이어는 투명 도전층(120)의 외부에 일부 노출될 수도 있다. 도 1과 같이 금속 나노와이어(121)가 투명 도전층(120)에 완전히 함침되는 경우 금속 나노와이어의 산화가 감소할 수 있어 투명 도전체(100)의 면저항을 더 낮출 수 있다.The transparent conductive layer 120 may include a metal nanowire 121 and a matrix 122 impregnated with the metal nanowire 121. 1 illustrates a case in which the metal nanowires are completely impregnated with the transparent conductive layer 120, but the present invention is not limited thereto. The metal nanowires may be partially exposed to the outside of the transparent conductive layer 120. When the metal nanowires 121 are completely impregnated with the transparent conductive layer 120 as shown in FIG. 1, the oxidation of the metal nanowires may be reduced, thereby lowering the sheet resistance of the transparent conductor 100.
금속 나노와이어(121)는 도전성 네트워크를 형성함으로써, 투명 도전체에 도전성을 제공할 수 있다. 금속 나노와이어(121)는 나노와이어 형상을 가지므로, 투명 도전체에 유연성과 굴곡성을 제공할 수 있다. 금속 나노와이어(121)는 종횡비가 약 10 내지 약 5,000이 될 수 있다. 상기 범위에서, 낮은 금속 나노와이어 밀도에서도 높은 도전성 네트워크를 구현할 수 있고, 투명 도전체의 면저항이 낮아질 수 있다. 구체적으로, 금속 나노와이어는 종횡비가 약 500 내지 약 1,000, 더 구체적으로 약 500 내지 약 700이 될 수 있다. 금속 나노와이어는 단면의 직경이 약 0nm 초과 약 100nm 이하, 구체적으로 약 10nm 내지 약 100nm, 더 구체적으로 약 10nm 내지 약 30nm가 될 수 있다. 상기 범위에서, 높은 종횡비를 가져 투명 도전체의 전도성을 높이고 면저항을 낮출 수 있다. 금속 나노와이어는 최장 길이가 약 10㎛ 이상, 구체적으로 약 10㎛ 내지 약 50㎛가 될 수 있다. 상기 범위에서, 높은 종횡비를 가져 투명 도전체의 전도성을 높이고 면저항을 낮출 수 있다. 금속 나노와이어는 은, 구리, 알루미늄, 니켈, 금 중 하나 이상을 포함하는 금속으로 형성될 수 있다. The metal nanowires 121 may provide conductivity to the transparent conductor by forming a conductive network. Since the metal nanowires 121 have a nanowire shape, the metal nanowires 121 may provide flexibility and flexibility to the transparent conductor. The metal nanowires 121 may have an aspect ratio of about 10 to about 5,000. Within this range, a high conductive network can be realized even at low metal nanowire densities, and the sheet resistance of the transparent conductor can be lowered. Specifically, the metal nanowires may have an aspect ratio of about 500 to about 1,000, more specifically about 500 to about 700. The metal nanowires may have a cross-sectional diameter greater than about 0 nm and up to about 100 nm, specifically about 10 nm to about 100 nm, more specifically about 10 nm to about 30 nm. In the above range, it is possible to have a high aspect ratio to increase the conductivity of the transparent conductor and lower the sheet resistance. The metal nanowires may have a longest length of about 10 μm or more, specifically about 10 μm to about 50 μm. In the above range, it is possible to have a high aspect ratio to increase the conductivity of the transparent conductor and lower the sheet resistance. The metal nanowires may be formed of a metal comprising one or more of silver, copper, aluminum, nickel, and gold.
금속 나노와이어(121)는 투명 도전층(120) 중 약 40중량% 내지 약 80중량%, 구체적으로 약 50중량% 내지 약 70중량%, 예를 들어 약 40, 45, 50, 55, 60, 65, 70, 75, 80중량%로 포함될 수 있다. 상기 범위에서, 투명 도전체의 도전성을 높여 줄 수 있다.The metal nanowires 121 may contain about 40 wt% to about 80 wt%, specifically about 50 wt% to about 70 wt% of the transparent conductive layer 120, for example about 40, 45, 50, 55, 60, 65, 70, 75, 80% by weight may be included. Within this range, it is possible to increase the conductivity of the transparent conductor.
매트릭스(122)는 기재층(110) 상에 형성되어, 기재층(110)과 금속 나노와이어(121)의 결합을 강하게 할 수 있다. 매트릭스(122)는 금속 나노와이어(121)의 도전성 네트워크를 함침시켜, 금속 나노와이어의 산화를 방지하여 투명 도전체의 면저항 상승을 막을 수 있다. 또한, 매트릭스(122)는 투명 도전체의 광학 특성, 내화학성, 내용매성, 내구성(신뢰성), 에칭성 등을 높일 수 있다.The matrix 122 may be formed on the base layer 110 to strengthen the bond between the base layer 110 and the metal nanowires 121. The matrix 122 may impregnate the conductive network of the metal nanowires 121 to prevent oxidation of the metal nanowires, thereby preventing an increase in the sheet resistance of the transparent conductor. In addition, the matrix 122 may increase optical characteristics, chemical resistance, solvent resistance, durability (reliability), etching resistance, and the like of the transparent conductor.
매트릭스(122)는 무기 중공 입자, 불소 함유 모노머 또는 그의 올리고머, 감광성 수지, 가교제 및 개시제를 포함하는 매트릭스용 조성물로 형성된 단일층일 수 있다. 본 실시예에 따른 투명 도전체(100)는 별도의 포토레지스트 사용 없이 패터닝될 수 있어서 생산성이 우수할 수 있다.The matrix 122 may be a single layer formed of a composition for a matrix including an inorganic hollow particle, a fluorine-containing monomer or an oligomer thereof, a photosensitive resin, a crosslinking agent, and an initiator. The transparent conductor 100 according to the present embodiment may be patterned without using a separate photoresist and thus may have high productivity.
도 2는 본 실시예에 따른 투명 도전체(100)의 패터닝 공정을 모식적으로 나타낸 것이다. 도 2를 참조하면, 본 실시예에 따른 투명 도전체(100) 상에 원하는 패턴을 갖는 마스크 패턴이 배치되고, UV가 조사될 수 있다. UV 조사량은 매트릭스의 두께, 매트릭스의 재질 등에 따라 변경시킬 수 있다. UV 조사는 UV가 노광된 부분(A)과 UV가 노광되지 않은 부분(B)을 매트릭스에 형성할 수 있다. 마스크 패턴을 제거한 후 투명 도전체를 현상(develop), 세정하여 UV 노광되지 않은 부분의 매트릭스를 제거한다. 그리고 에칭액 처리 및 세정 후 후경화, 하드베이킹을 실시하면 원하는 패턴이 형성된 투명 도전체를 제조할 수 있다. 에칭액은 질산, 초산, 인산의 혼합물로 Transene사의 Al 에천트를 사용할 수 있지만, 이에 제한되지 않는다. 투명 도전체(100)는 에칭액 처리를 추가하여 패터닝할 경우 종래 대비 에천트의 농도를 희석하여 사용하더라도 패턴 형성이 잘 될 수 있다. 하지만, 에칭액 처리 및 세정을 실시하지 않고, 현상, 세정만으로도 패턴 형성이 완료될 수도 있다. 또한, 투명 도전층(120)은 기재층(110)에 대한 부착성이 우수하여 패터닝시 현상, 세정 등에 의해 영향을 받지 않아서 기재층으로부터 박리되지 않을 수 있다.2 schematically shows a patterning process of the transparent conductor 100 according to the present embodiment. Referring to FIG. 2, a mask pattern having a desired pattern may be disposed on the transparent conductor 100 according to the present embodiment, and UV may be irradiated. The amount of UV radiation can be changed depending on the thickness of the matrix, the material of the matrix, and the like. UV irradiation can form a portion A to which UV is exposed and a portion B to which UV is not exposed in the matrix. After removing the mask pattern, the transparent conductor is developed and cleaned to remove the matrix of the unexposed portion. After the curing and the etching, the curing and the hard baking are performed to prepare a transparent conductor having a desired pattern. The etchant may be used as a mixture of nitric acid, acetic acid, phosphoric acid, Al etchant of Transene, but is not limited thereto. When the transparent conductor 100 is patterned by adding an etching solution treatment, the transparent conductor 100 may be well patterned even when the concentration of the etchant is diluted. However, pattern formation may be completed only by image development and cleaning, without performing etching liquid treatment and cleaning. In addition, the transparent conductive layer 120 is excellent in adhesion to the substrate layer 110 and is not affected by development, cleaning, etc. during patterning, and thus may not be peeled from the substrate layer.
이하, 매트릭스용 조성물에 대해 상세히 설명한다.Hereinafter, the composition for a matrix is explained in full detail.
무기 중공 입자 및 불소 함유 모노머 또는 그의 올리고머는 투명 도전층의 광 특성을 좋게 하여, 투명 도전체의 헤이즈를 낮추고 광 투과율을 높일 수 있다. 구체적으로, 투명 도전체(100)는 파장 550nm에서 헤이즈가 약 1.5% 이하, 구체적으로 약 0% 내지 약 1.5%가 될 수 있다. 투명 도전체(100)는 가시광선 영역 예를 들면 파장 400nm 내지 700nm에서 전광선 투과율이 약 90% 이상, 구체적으로 약 90% 내지 약 99%일 수 있다. 상기 범위에서, 투명성이 좋아 투명 도전체로 사용될 수 있다. 그와 동시에, 무기 중공 입자 및 불소 함유 모노머 또는 그의 올리고머는 하기 감광성 수지와 함께 투명 도전층의 패턴 형성성에 영향을 주어, 투명 도전층의 패턴 형성 능력을 개선하고, 기재층에 대한 부착성을 높여 현상 또는 세정에 의해서도 투명 도전층이 기재층으로부터 박리되지 않게 할 수 있다.The inorganic hollow particles and the fluorine-containing monomer or the oligomer thereof can improve the optical properties of the transparent conductive layer, lower the haze of the transparent conductor and increase the light transmittance. Specifically, the transparent conductor 100 may have a haze of about 1.5% or less, specifically about 0% to about 1.5% at a wavelength of 550nm. The transparent conductor 100 may have a total light transmittance of about 90% or more, specifically about 90% to about 99% in a visible light region, for example, a wavelength of 400 nm to 700 nm. In the above range, good transparency can be used as a transparent conductor. At the same time, the inorganic hollow particles and the fluorine-containing monomer or the oligomer thereof together with the following photosensitive resin affect the pattern formability of the transparent conductive layer, thereby improving the pattern forming ability of the transparent conductive layer and increasing the adhesion to the substrate layer. It is possible to prevent the transparent conductive layer from being peeled off from the base layer even by developing or washing.
무기 중공 입자는 굴절률이 약 1.4 이하, 구체적으로 약 1.30 내지 약 1.40, 약 1.33 내지 약 1.38이 될 수 있다. 무기 중공 입자의 평균입경(D50)은 약 100nm 이하, 구체적으로 약 30nm 내지 약 100nm, 구체적으로 약 40nm 내지 약 70nm일 수 있다. 상기 범위에서 매트릭스에 포함될 수 있으며, 투명 도전층으로 적용하기에 유리할 수 있다. 무기 중공 입자는 실리카, 멀라이트(mullite), 알루미나, 실리콘 카바이드(SiC), MgO-Al2O3-SiO2, Al2O3-SiO2, MgO-Al2O3-SiO2-LiO2, 또는 이들의 혼합물을 포함할 수 있고, 이들은 표면 처리된 것일 수도 있다. 불소 함유 모노머 또는 그의 올리고머는 불소 함유 (메트)아크릴계 모노머 또는 그의 올리고머를 포함할 수 있다. 불소 함유 모노머는 Kyoeisha사 LINC series(예 LINC-3A), 올리고머는 DAIKIN사 OPTOOL series(예 AR-100)를 사용할 수 있다.The inorganic hollow particles may have a refractive index of about 1.4 or less, specifically about 1.30 to about 1.40, about 1.33 to about 1.38. The average particle diameter (D50) of the inorganic hollow particles may be about 100 nm or less, specifically about 30 nm to about 100 nm, specifically about 40 nm to about 70 nm. It may be included in the matrix in the above range, it may be advantageous to apply as a transparent conductive layer. Inorganic hollow particles are silica, mullite, alumina, silicon carbide (SiC), MgO-Al 2 O 3 -SiO 2 , Al 2 O 3 -SiO 2 , MgO-Al 2 O 3 -SiO 2 -LiO 2 Or mixtures thereof, which may be surface treated. The fluorine-containing monomer or oligomer thereof may include a fluorine-containing (meth) acrylic monomer or an oligomer thereof. The fluorine-containing monomer may be Kyoeisha LINC series (example LINC-3A), and the oligomer may be DAIKIN Corporation OPTOOL series (example AR-100).
무기 중공 입자 및 불소 함유 모노머 또는 그의 올리고머는 각각 그 자체로 포함될 수도 있고, 또는 이들 모두를 포함하는 용액으로 포함될 수도 있다. 상기 용액은 개시제, (메트)아크릴계 모노머, 및 용매 예를 들면 메틸이소부틸케톤 등을 더 포함할 수 있다. 무기 중공 입자 및 불소 함유 모노머 또는 그의 올리고머 전체, 또는 상기 무기 중공 입자 및 불소 함유 모노머 또는 그의 올리고머 전체를 함유하는 용액은 굴절률이 약 1.42 이하 구체적으로 약 1.33 내지 약 1.38이 될 수 있다. 상기 범위에서, 투명 도전층의 광학적 특성이 좋을 수 있다. 상기 용액은 시판되는 제품 예를 들면 A-2505(Pelnox사), OPSTAR TU series(JSR사) 등을 포함할 수 있지만, 이에 제한되지 않는다.The inorganic hollow particles and the fluorine-containing monomers or oligomers thereof may each be included by themselves, or may be included in a solution containing both of them. The solution may further include an initiator, a (meth) acrylic monomer, and a solvent such as methyl isobutyl ketone. The solution containing the entire inorganic hollow particles and the fluorine-containing monomer or the oligomer thereof, or the entire inorganic hollow particles and the fluorine-containing monomer or the oligomer thereof may have a refractive index of about 1.42 or less, specifically about 1.33 to about 1.38. In the above range, the optical properties of the transparent conductive layer may be good. The solution may include, but is not limited to, a commercially available product such as A-2505 (Pelnox), OPSTAR TU series (JSR), and the like.
무기 중공 입자 및 불소 함유 모노머 또는 그의 올리고머 전체는 매트릭스용 조성물 중 고형분 기준으로 약 10중량% 내지 약 50중량%, 예를 들어 약 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50중량%, 구체적으로 약 20중량% 내지 약 40중량% 또는 약 30중량% 내지 약 50중량%로 포함될 수 있다. 상기 범위에서, 필름의 투명성이 향상되어 투과율을 높이고, 기재층에 대한 매트릭스의 부착력을 향상시키는 효과가 있을 수 있다. 본 명세서에서 "고형분"은 매트릭스용 조성물 중 용매를 제외한 나머지 전체를 의미한다.The inorganic hollow particles and the fluorine-containing monomer or the entirety of the oligomers thereof are from about 10% to about 50% by weight based on solids in the matrix composition, for example about 10, 11, 12, 13, 14, 15, 16, 17, 18 , 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43 , 44, 45, 46, 47, 48, 49, 50% by weight, specifically about 20% to about 40% or about 30% to about 50% by weight. In the above range, the transparency of the film is improved to increase the transmittance, there may be an effect of improving the adhesion of the matrix to the substrate layer. In the present specification, "solid content" means the entirety of the matrix composition except for the solvent.
감광성 수지는 경화되어 매트릭스를 형성하고, UV 노광에 의해 투명 도전체를 패터닝시킬 수 있다. 감광성 수지는 UV 조사시 포지티브형 또는 네거티브형 감광성 수지를 포함할 수 있다.The photosensitive resin can be cured to form a matrix and pattern the transparent conductor by UV exposure. The photosensitive resin may include a positive or negative photosensitive resin upon UV irradiation.
감광성 수지는 중량평균분자량이 약 5000g/mol 내지 약 10000g/mol 예를 들어 5000, 5500, 6000, 6500, 7000, 7500, 8000, 8500, 9000, 9500, 10000g/mol, 구체적으로 약 5500g/mol 내지 약 9000g/mol이 될 수 있다. 상기 범위에서, 패턴 형성이 잘 되고 매트릭스의 부착성이 향상되는 효과가 있을 수 있다. 감광성 수지는 범용적인 포토레지스트용 감광성 수지로서, 페놀노볼락 수지, 크레졸노볼락 수지, 나프톨노볼락 수지, 각종 페놀성 화합물을 사용한 노볼락 수지, 알콕시기 함유 방향환 변성 노볼락 수지 등의 노볼락 수지, 방향족 탄화수소포름알데히드 수지 변성 페놀 수지, 디시클로펜타디엔페놀 부가형 수지, 페놀아랄킬 수지, 나프톨아랄킬 수지, 트리메틸올메탄 수지, 테트라페닐올에탄 수지, 비페닐 변성 페놀수지, 비페닐 변성 나프톨 수지, 아미노트리아진 변성 페놀 수지 등을 포함할 수 있다. 이 중에서도, 노볼락 수지가 무기 중공 입자 및 불소 함유 모노머 또는 그의 올리고머와 함께 혼합 시에 패턴성이 우수하다는 점에서 바람직할 수 있다.The photosensitive resin has a weight average molecular weight of about 5000 g / mol to about 10000 g / mol such as 5000, 5500, 6000, 6500, 7000, 7500, 8000, 8500, 9000, 9500, 10000 g / mol, specifically about 5500 g / mol About 9000 g / mol. In the above range, there may be an effect that the pattern formation is good and the adhesion of the matrix is improved. The photosensitive resin is a general photosensitive resin for photoresists, and includes novolacs such as phenol novolak resins, cresol novolak resins, naphthol novolak resins, novolak resins using various phenolic compounds, and alkoxy group-containing aromatic ring modified novolak resins Resin, aromatic hydrocarbon formaldehyde resin modified phenol resin, dicyclopentadiene phenol addition resin, phenol aralkyl resin, naphthol aralkyl resin, trimethylol methane resin, tetraphenylolethane resin, biphenyl modified phenol resin, biphenyl modified naphthol Resins, aminotriazine-modified phenolic resins, and the like. Among these, a novolak resin may be preferable at the point which is excellent in pattern property at the time of mixing with an inorganic hollow particle and a fluorine-containing monomer or its oligomer.
감광성 수지는 매트릭스용 조성물 중 고형분 기준으로 약 30중량% 내지 약 65중량% 예를 들어 약 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65중량%, 구체적으로 약 40중량% 내지 약 60중량%로 포함될 수 있다. 상기 범위에서, 노광, 현상, 세정 등에 의해서 패턴 형성이 잘 되고 매트릭스의 부착성, 코팅성이 우수하며 금속 나노와이어의 도전성에 영향이 없는 효과가 있을 수 있다.The photosensitive resin is about 30% to about 65% by weight based on solids in the composition for the matrix, for example about 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43 , 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65% by weight, specifically about 40 wt% to about 60 wt%. In the above range, the pattern is formed by exposure, development, cleaning, etc., the adhesion of the matrix, the coating property can be excellent and there is no effect on the conductivity of the metal nanowires.
가교제는 감광성 수지, 불소 함유 모노머 또는 그의 올리고머를 경화시킬 수 있다. 가교제는 멜라민계 화합물, 구아나민계 화합물, 글리콜우릴계 화합물, 우레아계 화합물, 레졸 수지, 에폭시계 화합물, 이소시아네이트계 화합물, 아지드 계 화합물, 알케닐에테르기 등의 이중 결합을 포함하는 화합물, 산 무수물계 화합물, 옥사졸린계 화합물 등을 포함할 수 있다. 이들 중에서도, 상기 멜라민계 화합물은 상기 무기 중공 입자 및 불소 함유 모노머 또는 올리고머 함유 용액과 혼합되었을 때 매트릭스용 조성물의 경화율을 높이고, 투명 도전체의 패턴 형성을 용이하게 할 수 있다.The crosslinking agent can cure the photosensitive resin, the fluorine-containing monomer or the oligomer thereof. The crosslinking agent is a compound containing a double bond such as melamine compound, guanamine compound, glycoluril compound, urea compound, resol resin, epoxy compound, isocyanate compound, azide compound, alkenyl ether group, acid Anhydride compounds, oxazoline compounds, and the like. Among these, the melamine-based compound can increase the curing rate of the composition for the matrix when mixed with the inorganic hollow particles and the fluorine-containing monomer or oligomer-containing solution, and facilitate the pattern formation of the transparent conductor.
상기 멜라민계 화합물은 예를 들면 헥사메틸올멜라민, 헥사메톡시메틸멜라민, 헥사메틸올멜라민의 1개 내지 6개의 메틸올기가 메톡시메틸화된 화합물, 헥사메톡시에틸멜라민, 헥사아실옥시메틸멜라민, 헥사메틸올멜라민의 메틸올기의 1개 내지 6개가 아실옥시메틸화된 화합물 등을 포함할 수 있다. 상기 구아나민계 화합물은 테트라메틸올구아나민, 테트라메톡시메틸구아나민, 테트라메톡시메틸벤조구아니민, 테트라메틸올구아나민의 1개 내지 4개의 메틸올기가 메톡시메틸화된 화합물, 테트라메톡시에틸구아나민, 테트라아실옥시구아나민, 테트라메틸올구아나민의 1개 내지 4개의 메틸올기가 아실옥시메틸화된 화합물 등을 포함할 수 있다. 상기 글리콜우릴계 화합물은 1,3,4,6-테트라키스(메톡시메틸)글리콜우릴, 1,3,4,6-테트라키스(부톡시메틸)글리콜우릴, 1,3,4,6-테트라키스(히드록시메틸)글리콜우릴 등을 포함할 수 있다. 상기 우레아계 화합물은 1,3-비스(히드록시메틸)우레아, 1,1,3,3-테트라키스(부톡시메틸)우레아, 1,1,3,3-테트라키스(메톡시메틸)우레아 등을 들 수 있다. 상기 레졸 수지는 페놀, 크레졸이나 자일레놀 등의 알킬 페놀, 페닐 페놀, 레조르시놀, 비페닐, 비스페놀 A나 비스페놀 F 등의 비스페놀, 나프톨, 디히드록시나프탈렌 등의 페놀성 수산기 함유 화합물과, 알데히드 화합물을 알칼리성 촉매 조건 하에서 반응시켜 얻어지는 중합체를 들 수 있다. 상기 에폭시 화합물은 트리스(2,3-에폭시프로필)이소시아누레이트, 트리메틸올메탄트리글리시딜에테르, 트리메틸올프로판트리글리시딜에테르, 트리에틸올에탄트리글리시딜에테르 등을 들 수 있다. 상기 이소시아네이트계 화합물은 톨릴렌디이소시아네이트, 디페닐메탄디이소시아네이트, 헥사메틸렌디이소시아네이트, 시클로헥산디이소시아네이트 등을 들 수 있다. 상기 아지드계 화합물은 1,1'-비페닐-4,4'-비스아지드, 4,4'-메틸리덴비스아지드, 4,4'-옥시비스아지드 등을 들 수 있다. 상기 알케닐에테르기 등의 이중 결합을 포함하는 화합물은 에틸렌글리콜디비닐에테르, 트리에틸렌글리콜디비닐에테르, 1,2-프로판디올디비닐에테르, 1,4-부탄디올디비닐에테르, 테트라메틸렌글리콜디비닐에테르, 네오펜틸글리콜디비닐에테르, 트리메틸올프로판트리비닐에테르, 헥산디올디비닐에테르, 1,4-시클로헥산디올디비닐에테르, 펜타에리트리톨트리비닐에테르, 펜타에리트리톨테트라비닐에테르, 소르비톨테트라비닐에테르, 소르비톨펜타비닐에테르, 트리메틸올프로판트리비닐에테르 등을 들 수 있다. 상기 산 무수물계 화합물은 무수프탈산, 무수트리멜리트산, 무수피로멜리트산, 3,3',4,4'-벤조페논테트라카르복시산 2무수물, 비페닐테트라카르복시산 2무수물, 4,4'-(이소프로필리덴)디프탈산 무수물, 4,4'-(헥사플루오로이소프로필리덴)디프탈산 무수물 등의 방향족산 무수물; 무수테트라히드로프탈산, 무수메틸테트라히드로프탈산, 무수헥사히드로프탈산, 무수메틸헥사히드로프탈산, 무수엔도메틸렌테트라히드로프탈산무수도데세닐숙신산, 무수트리알킬테트라히드로프탈산 등의 지환식 카르복시산 무수물 등을 들 수 있다.The melamine-based compound is, for example, hexamethylolmelamine, hexamethoxymethylmelamine, a compound in which 1 to 6 methylol groups of hexamethylolmelamine are methoxymethylated, hexamethoxyethylmelamine, hexaacyloxymethylmelamine, One to six of the methylol groups of hexamethylolmelamine may contain acyloxymethylated compounds and the like. The guanamine compound is a compound in which 1 to 4 methylol groups are methoxymethylated of tetramethylolguanamine, tetramethoxymethylguanamine, tetramethoxymethylbenzoguanamine, and tetramethylolguanamine. Methoxyethylguanamine, tetraacyloxyguanamine, tetramethylolguanamine, and the like. The compound may include acyloxymethylated one to four methylol groups. The glycoluril compound may be 1,3,4,6-tetrakis (methoxymethyl) glycoluril, 1,3,4,6-tetrakis (butoxymethyl) glycoluril, 1,3,4,6- Tetrakis (hydroxymethyl) glycoluril and the like. The urea compound is 1,3-bis (hydroxymethyl) urea, 1,1,3,3-tetrakis (butoxymethyl) urea, 1,1,3,3-tetrakis (methoxymethyl) urea Etc. can be mentioned. The said resol resin is phenolic hydroxyl group containing compounds, such as bisphenol, naphthol, dihydroxy naphthalene, such as alkyl phenol, phenyl phenol, resorcinol, biphenyl, bisphenol A, bisphenol F, such as phenol, cresol, and xylenol; The polymer obtained by making an aldehyde compound react on alkaline catalyst conditions is mentioned. Examples of the epoxy compound include tris (2,3-epoxypropyl) isocyanurate, trimethylol methane triglycidyl ether, trimethylolpropane triglycidyl ether, triethylol ethane triglycidyl ether, and the like. Examples of the isocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate, cyclohexane diisocyanate and the like. Examples of the azide compound include 1,1'-biphenyl-4,4'-bisazide, 4,4'-methylidenebisazide, 4,4'-oxybisazide and the like. Compounds containing double bonds such as alkenyl ether groups include ethylene glycol divinyl ether, triethylene glycol divinyl ether, 1,2-propanediol divinyl ether, 1,4-butanediol divinyl ether, tetramethylene glycol di Vinyl ether, neopentyl glycol divinyl ether, trimethylol propane trivinyl ether, hexanediol divinyl ether, 1, 4- cyclohexanediol divinyl ether, pentaerythritol trivinyl ether, pentaerythritol tetravinyl ether, sorbitol tetra Vinyl ether, sorbitol pentavinyl ether, trimethylol propane trivinyl ether, etc. are mentioned. The acid anhydride compounds include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, 3,3 ', 4,4'-benzophenonetetracarboxylic dianhydride, biphenyltetracarboxylic dianhydride, 4,4'-(iso Aromatic acid anhydrides such as propylidene) diphthalic anhydride and 4,4 '-(hexafluoroisopropylidene) diphthalic anhydride; And alicyclic carboxylic anhydrides such as tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, endomethylenetetrahydrophthalic anhydride anhydrous decenylic acid, and trialkyltetrahydrophthalic anhydride. .
가교제는 매트릭스용 조성물 중 고형분 기준으로 약 1중량% 내지 약 10중량% 예를 들어 약 1, 2, 3, 4, 5, 6, 7, 8, 9, 10중량%, 구체적으로 약 1중량% 내지 약 5중량%로 포함될 수 있다. 상기 범위에서, 감광성 수지의 가교도를 제어하여 패턴 형성의 공정 마진을 제어할 수 있고 패턴 형성이 용이하게 할 수 있다.Crosslinking agent is about 1% to about 10% by weight, for example about 1, 2, 3, 4, 5, 6, 7, 8, 9, 10% by weight, specifically about 1% by weight, based on solids in the composition for the matrix To about 5% by weight. In the above range, the process margin of the pattern formation can be controlled by controlling the degree of crosslinking of the photosensitive resin and the pattern formation can be facilitated.
개시제는 감광성 수지, 불소 함유 모노머 또는 그의 올리고머를 경화시키는 것으로, 당업자에게 알려진 통상의 개시제를 포함할 수 있다. 예를 들면, 개시제는 활성 라디칼을 생성하는 개시제, 양이온 중합을 개시하는 개시제 등의 감광성 개시제를 포함할 수 있다. 개시제는 할로겐화 탄화수소 유도체(예를 들면, 트리아진 골격을 갖는 유도체, 옥사다이아졸 골격을 갖는 유도체 등), 아실포스핀옥시드 등의 아실포스핀 화합물, 헥사아릴비이미다졸, 옥심 유도체 등의 옥심 화합물, 유기 과산화물, 티오 화합물, 케톤 화합물, 방향족 오늄염, 아미노아세토페논, 히드록시아세토페논 등을 포함할 수 있다. 이 중에서도 옥심 유도체가 낮은 노광량에서 패턴 형성 용이한 점에서 바람직하다. 옥심 유도체는 1-[9-에틸-6-(2-메틸벤조일)-9H-카르바졸-3-일]-3-시클로펜틸프로파논-1-(O-아세틸옥심), 3-벤조일옥시이미도부탄-2-온, 3-아세톡시이미노부탄-2-온, 3-프로피온일옥시이미노부탄-2-온, 2-아세톡시이미노펜탄-3-온, 2-아세톡시이미노-1-페닐프로판-1-온, 2-벤조일옥시이미노-1-페닐프로판-1-온, 3-(4-톨루엔술폰일옥시)이미노부탄-2-온, 2-에톡시카보닐옥시이미노-1-페닐프로판-1-온 등을 포함할 수 있다. The initiator is a curing agent for the photosensitive resin, the fluorine-containing monomer or the oligomer thereof, and may include a conventional initiator known to those skilled in the art. For example, the initiator may include photosensitive initiators such as initiators that generate active radicals and initiators that initiate cationic polymerization. Initiators include oxime compounds such as halogenated hydrocarbon derivatives (for example, derivatives having a triazine skeleton, derivatives having an oxadiazole skeleton), acylphosphine compounds such as acylphosphine oxide, hexaarylbiimidazole, and oxime derivatives. , Organic peroxides, thio compounds, ketone compounds, aromatic onium salts, aminoacetophenones, hydroxyacetophenones, and the like. Among these, an oxime derivative is preferable at the point which is easy to form a pattern at low exposure amount. Oxime derivatives include 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -3-cyclopentylpropanone-1- (O-acetyloxime), 3-benzoyloxyimido Butan-2-one, 3-acetoxyiminobutan-2-one, 3-propionyloxyiminobutan-2-one, 2-acetoxyiminopentan-3-one, 2-acetoxyimino-1-phenylpropane -1-one, 2-benzoyloxyimino-1-phenylpropan-1-one, 3- (4-toluenesulfonyloxy) iminobutan-2-one, 2-ethoxycarbonyloxyimino-1-phenyl Propan-1-one and the like.
개시제는 매트릭스용 조성물 중 고형분 기준으로 약 1중량% 내지 약 15중량% 예를 들어 약 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15중량%, 구체적으로 약 1중량% 내지 약 10중량%로 포함될 수 있다. 상기 범위에서, 낮은 노광량으로도 패턴 형성을 용이하게 하고 후경화 공정에서 매트릭스 층의 부착성을 향상시키는 효과가 있을 수 있다.The initiator is about 1% to about 15% by weight based on solids in the composition for the matrix, for example about 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15 weight percent, specifically about 1 weight percent to about 10 weight percent. Within this range, there may be an effect of facilitating pattern formation even at low exposure doses and improving adhesion of the matrix layer in the post-curing process.
매트릭스용 조성물은 부착 증진제, 산화방지제 중 하나 이상을 더 포함할 수 있다.The composition for the matrix may further include at least one of an adhesion promoter and an antioxidant.
부착 증진제는 투명 도전층의 기재층에 대한 부착성을 증진시켜 투명 도전층의 두께를 박형화시키고, 투명 도전체의 신뢰성을 높일 수 있다. 부착 증진제는 실란커플링제, 1관능의 (메트)아크릴계 모노머, 2관능의 (메트)아크릴계 모노머 중 하나 이상을 포함할 수 있다. 이들은 단독 또는 2종 이상 혼합하여 포함될 수 있다. 실란커플링제는 통상의 알려진 실란커플링제로, 2-(3,4-에폭시시클로헥실)에틸트리메톡시실란, 2-(3,4-에폭시시클로헥실)에틸트리에톡시실란, 3-글리시드옥시프로필트리메톡시실란 등의 에폭시기를 갖는 실란커플링제; 비닐트리메톡시실란 등의 중합성 불포화기 함유 실란커플링제; 3-아미노프로필트리메톡시실란, 3-아미노프로필트리에톡시실란 등의 아미노기 함유 실란커플링제; 및 3-클로로프로필트리메톡시실란 중 하나 이상을 사용할 수 있다. 1관능 또는 2관능의 (메트)아크릴계 모노머는 C3 내지 C20의 다가알코올의, 1관능 또는 2관능의 (메트)아크릴계 모노머로서, 이소보르닐(메트)아크릴레이트, 사이클로펜틸(메트)아크릴레이트, 사이클로헥실(메트)아크릴레이트, 트리메틸올프로판디(메트)아크릴레이트, 에틸렌글리콜디(메트)아크릴레이트, 네오펜틸글리콜디(메트)아크릴레이트, 헥산디올디(메트)아크릴레이트, 사이클로데칸디메탄올디(메트)아크릴레이트 중 하나 이상을 포함할 수 있다. 바람직하게는, 부착 증진체는 실란커플링제로서 에폭시기를 갖는 실란커플링제를 사용할 수 있다. 이 경우 박형(예: 투명 도전층 두께가 약 2㎛ 이하)의 투명 도전층 두께에서도 부착성을 높일 수 있다. 특히, 투명 도전층이 패턴화된 후에도 투명 도전층의 부착성을 높일 수 있다.An adhesion promoter may increase the adhesion of the transparent conductive layer to the base layer to reduce the thickness of the transparent conductive layer and increase the reliability of the transparent conductor. The adhesion promoter may include one or more of a silane coupling agent, a monofunctional (meth) acrylic monomer, and a bifunctional (meth) acrylic monomer. These may be included alone or in combination of two or more. Silane coupling agents are commonly known silane coupling agents, such as 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltriethoxysilane, 3-glycid Silane coupling agents having an epoxy group such as oxypropyltrimethoxysilane; Polymerizable unsaturated group-containing silane coupling agents such as vinyltrimethoxysilane; Amino group-containing silane coupling agents such as 3-aminopropyltrimethoxysilane and 3-aminopropyltriethoxysilane; And 3-chloropropyltrimethoxysilane. Monofunctional or bifunctional (meth) acrylic monomers are mono- or difunctional (meth) acrylic monomers of C3 to C20 polyhydric alcohols, including isobornyl (meth) acrylate, cyclopentyl (meth) acrylate, Cyclohexyl (meth) acrylate, trimethylolpropanedi (meth) acrylate, ethylene glycol di (meth) acrylate, neopentylglycoldi (meth) acrylate, hexanedioldi (meth) acrylate, cyclodecane dimethanol And may comprise one or more of di (meth) acrylates. Preferably, the adhesion promoter may use a silane coupling agent having an epoxy group as the silane coupling agent. In this case, adhesiveness can be improved even in the thickness of thin transparent conductive layer (for example, transparent conductive layer thickness of about 2 micrometers or less). In particular, even after a transparent conductive layer is patterned, the adhesiveness of a transparent conductive layer can be improved.
부착증진제는 고형분 기준 매트릭스용 조성물 중 약 5중량% 내지 약 20중량% 예를 들어 약 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20중량%, 구체적으로 약 5중량% 내지 약 15중량%로 포함될 수 있다. 상기 범위에서, 투명 도전체의 신뢰성과 도전성을 좋게 하고, 투명 도전층의 부착성을 좋게 할 수 있다. Adhesion promoters are from about 5% to about 20% by weight in the composition for a solids based matrix for example about 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20% by weight, specifically about 5% to about 15% by weight. Within this range, the reliability and conductivity of the transparent conductor can be improved, and the adhesion of the transparent conductive layer can be improved.
산화방지제는 금속 나노와이어의 네트워크의 산화를 방지할 수 있다. 산화방지제는 트리아졸계, 트리아진계, 포스파이트계 등의 인계, HALS(Hinder amine light stabilizer)계, 페놀계, 금속 아세틸아세토네이트계 산화방지제 중 하나 이상을 포함할 수 있다. 이들은 단독 또는 2종 이상 혼합하여 포함될 수 있다. 구체적으로, 인계 산화방지제는 트리스(2,4-디-터트-부틸페닐)포스파이트, 페놀계 산화방지제는 펜타에리트리톨테트라키스(3-(3,5-디-터트-부틸-4-히드록시페닐)프로피오네이트)가 될 수 있다. HALS계 산화방지제는 비스(2,2,6,6-테트라메틸-4-피페리딜)세바케이트, 비스(2,2,6,6-테트라메틸-4-피페리디닐)세바케이트, 비스(2,2,6,6-테트라메틸-5-피페리디닐)세바케이트, 4-히드록시-2,2,6,6-테트라메틸-1-피페리딘-에탄올을 갖는 디메틸숙시네이트 공중합체, 2,4-비스[N-부틸-N-(1-시클로헥실옥시-2,2,6,6-테트라메틸피페리딘-4-일)아미노]-6-(2-히드록시에틸아민)-1,3,5-트리아진 등을 포함할 수 있지만, 이에 제한되지 않는다. 금속 아세틸아세토네이트계 산화방지제는 트리스(아세틸아세토네이토)철(III), 트리스(아세틸아세토네이토)크롬(III) 등을 포함할 수 있지만, 이에 제한되지 않는다. Antioxidants can prevent oxidation of the network of metal nanowires. The antioxidant may include at least one of triazole-based, triazine-based, phosphite-based phosphorus, HALS (Hinder amine light stabilizer), phenol-based, metal acetylacetonate-based antioxidant. These may be included alone or in combination of two or more. Specifically, the phosphorus antioxidant is tris (2,4-di-tert-butylphenyl) phosphite, and the phenolic antioxidant is pentaerythritol tetrakis (3- (3,5-di-tert-butyl-4-hydrate Oxyphenyl) propionate). HALS-based antioxidants include bis (2,2,6,6-tetramethyl-4-piperidyl) sebacate, bis (2,2,6,6-tetramethyl-4-piperidinyl) sebacate, bis (2,2,6,6-tetramethyl-5-piperidinyl) sebacate, dimethylsuccinate air with 4-hydroxy-2,2,6,6-tetramethyl-1-piperidine-ethanol Coalescing, 2,4-bis [N-butyl-N- (1-cyclohexyloxy-2,2,6,6-tetramethylpiperidin-4-yl) amino] -6- (2-hydroxy Ethylamine) -1,3,5-triazine and the like, but is not limited thereto. Metal acetylacetonate-based antioxidants may include, but are not limited to, tris (acetylacetonato) iron (III), tris (acetylacetonato) chrome (III), and the like.
산화방지제는 고형분 기준 매트릭스용 조성물 중 약 0.01중량% 내지 약 10중량% 예를 들어 약 0.01, 0.05, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10중량%, 구체적으로 약 0.5중량% 내지 약 7중량%로 포함될 수 있다. 상기 범위에서, 금속 나노와이어의 산화를 방지하고, 패터닝된 투명 도전체의 패턴 균일도가 높고 미세 패턴의 구현에 유리할 수 있다.The antioxidant is about 0.01% to about 10% by weight in the composition for a matrix based on solids, for example about 0.01, 0.05, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10% by weight, specifically About 0.5% to about 7% by weight. In the above range, it is possible to prevent the oxidation of the metal nanowire, high pattern uniformity of the patterned transparent conductor and may be advantageous for the implementation of a fine pattern.
매트릭스용 조성물은 용매를 더 포함할 수 있다. 용매는 프로필렌글리콜모노메틸에테르아세테이트(PGEMA), 메틸이소부틸케톤 등의 케톤계 용매, 이소프로필알코올, 에탄올 등의 알코올계 용매 중 하나 이상을 포함할 수 있다. The matrix composition may further include a solvent. The solvent may include one or more of ketone solvents such as propylene glycol monomethyl ether acetate (PGEMA) and methyl isobutyl ketone, and alcohol solvents such as isopropyl alcohol and ethanol.
매트릭스용 조성물은 첨가제를 더 포함할 수 있다. 첨가제는 불소계 계면활성제 등의 계면활성제, 대전방지제, 자외선 흡수제, 점도 조절제, 열안정제, 분산제, 증점제 등을 포함할 수 있다.The composition for the matrix may further include an additive. The additives may include surfactants such as fluorine-based surfactants, antistatic agents, ultraviolet absorbers, viscosity modifiers, heat stabilizers, dispersants, thickeners and the like.
매트릭스용 조성물은 25℃에서 점도가 약 0.1cP 내지 약 20cP가 될 수 있다. 상기 범위에서, 매트릭스용 조성물의 코팅성을 좋게 하고, 균일하게 박막으로 코팅되도록 하여 투명 도전층이 균일한 물리, 화학적 특성을 내도록 할 수 있다.The composition for the matrix may have a viscosity of about 0.1 cP to about 20 cP at 25 ° C. In the above range, it is possible to improve the coating property of the composition for the matrix, and to be uniformly coated with a thin film so that the transparent conductive layer has uniform physical and chemical properties.
투명 도전층(120)은 두께가 약 1㎛ 이상 약 2㎛ 이하 예를 들어 약 1, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2㎛, 더 구체적으로 약 1㎛ 이상 약 1.7㎛ 이하가 될 수 있다. 상기 범위에서, 광학 디스플레이 장치에 사용될 수 있고, 패턴 형성 능력이 좋고, 기재층에 대한 부착성이 좋으며 광학 특성이 우수하다.The transparent conductive layer 120 has a thickness of about 1 μm or more and about 2 μm or less, for example, about 1, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2 μm, more specifically about 1 μm. And about 1.7 μm or less. In the above range, it can be used in the optical display device, the pattern forming ability is good, the adhesion to the substrate layer is good and the optical properties are excellent.
투명 도전체(100)는 4-프로브(probe) 또는 비접촉식 면저항 측정기로 측정된 면저항이 약 100Ω/□ 이하, 구체적으로 약 50Ω/□ 이하, 더 구체적으로 약 20Ω/□ 내지 약 50Ω/□일 수 있다. 상기 범위에서, 면저항이 낮아 터치패널용 전극 필름으로 사용할 수 있고, 대면적 터치패널에 적용될 수 있다. 투명 도전체(100)의 두께는 약 10㎛ 내지 약 250㎛, 구체적으로 약 50㎛ 내지 약 200㎛일 수 있다. 상기 범위에서, 터치패널용 필름을 포함하는 투명 전극 필름으로 사용할 수 있고, 플렉서블 터치 패널용 투명 전극필름으로 사용될 수 있다. 투명 도전체(100)는 필름 형태로서, 에칭 등에 의해 패터닝되어, 터치 패널, E-paper, 또는 태양 전지의 투명 전극 필름으로 사용될 수 있다.The transparent conductor 100 may have a sheet resistance of about 100 μs / □ or less, specifically about 50 μs / □ or less, and more specifically about 20 μs / □ to about 50 μs / □, measured by a 4-probe or non-contact sheet resistance meter. have. In the above range, the sheet resistance is low, it can be used as an electrode film for a touch panel, it can be applied to a large area touch panel. The thickness of the transparent conductor 100 may be about 10 μm to about 250 μm, specifically about 50 μm to about 200 μm. In the above range, it can be used as a transparent electrode film including a film for a touch panel, it can be used as a transparent electrode film for a flexible touch panel. The transparent conductor 100 may be used as a transparent electrode film of a touch panel, an E-paper, or a solar cell, in the form of a film, and patterned by etching or the like.
이하, 본 발명의 다른 실시예에 따른 투명 도전체를 도3을 참고하여 설명한다. 도 3은 본 발명의 다른 실시예에 따른 투명 도전체의 단면도이다. Hereinafter, a transparent conductor according to another embodiment of the present invention will be described with reference to FIG. 3. 3 is a cross-sectional view of a transparent conductor according to another embodiment of the present invention.
도 3을 참고하면, 본 실시예의 투명 도전체(100')는 투명 도전층(120')이 투명 도전성층(120a), 도전성이 없는 비 도전성층(120b)으로 패턴화된 점을 제외하고는 본 발명의 일 실시예의 투명 도전체(100)와 실질적으로 동일하다. 투명 도전층(120')은 본 발명의 일 실시예에 따른 투명 도전층(120)을 패터닝하여 형성될 수 있다. 구체적으로, 패터닝은 상기 도 2에서 설명한 바와 동일하다. 또한, 에칭시 에칭액으로부터 경화된 패턴층의 금속 나노와이어가 에칭되는 것을 막기 위해, 에칭액을 저농도로 사용하거나 에칭 시간을 단축시킬 수도 있다.Referring to FIG. 3, the transparent conductor 100 ′ of the present embodiment is except that the transparent conductive layer 120 ′ is patterned into a transparent conductive layer 120 a and a non-conductive layer 120 b having no conductivity. It is substantially the same as the transparent conductor 100 of one embodiment of the present invention. The transparent conductive layer 120 ′ may be formed by patterning the transparent conductive layer 120 according to an embodiment of the present invention. Specifically, patterning is the same as described above with reference to FIG. 2. Further, in order to prevent the metal nanowires of the pattern layer cured from the etching solution during etching, the etching solution may be used at low concentration or the etching time may be shortened.
이하, 도 4를 참고하여 본 발명의 일 실시예에 따른 광학표시장치를 설명한다. 도 4는 본 발명의 일 실시예에 따른 광학표시장치의 단면도이다.Hereinafter, an optical display device according to an exemplary embodiment of the present invention will be described with reference to FIG. 4. 4 is a cross-sectional view of an optical display device according to an exemplary embodiment of the present invention.
도 4를 참고하면, 본 발명의 일 실시예에 따른 광학표시장치(200)는 디스플레이부(210), 편광판(220), 투명 전극체(230), 윈도우 필름(240), 점착층(250)을 포함하고, 투명 전극체(230)는 본 발명의 실시예들에 따른 투명 도전체로 형성될 수 있다. 도 4는 디스플레이부(210), 편광판(220), 투명 전극체(230), 윈도우 필름(240)의 순서로 적층된 구조를 도시한 것이나, 디스플레이부(210), 투명 전극체(230), 편광판(220), 윈도우 필름(240)의 순서로 적층된 구조도 가능할 수 있다.Referring to FIG. 4, the optical display device 200 according to an exemplary embodiment of the present invention may include a display unit 210, a polarizer 220, a transparent electrode body 230, a window film 240, and an adhesive layer 250. It includes, the transparent electrode body 230 may be formed of a transparent conductor according to embodiments of the present invention. 4 illustrates a structure in which the display unit 210, the polarizing plate 220, the transparent electrode body 230, and the window film 240 are stacked in this order, but the display unit 210, the transparent electrode body 230, The polarizer 220 and the window film 240 may be stacked in the order of the structure.
디스플레이부(210)는 광학표시장치(200)를 구동시키기 위한 것으로, 기판 및 기판 상에 형성된 OLED, LED 또는 LCD 소자를 포함하는 광학소자를 포함할 수 있다. 일 구체예에서, 디스플레이부(210)는 하부기판, 박막 트랜지스터, 유기발광다이오드, 평탄화층, 보호막, 절연막을 포함할 수 있다. 다른 구체예에서, 디스플레이부(210)는 상부기판, 하부기판, 상부 기판과 하부 기판 사이에 위치된 액정층, 및 상부기판, 하부기판 중 하나 이상에 형성된 칼라필터를 포함할 수 있다. 도 4는 디스플레이부(210)와 투명 전극체(230)이 별개의 독립적으로 적층된 구조를 나타낸 것이나, 디스플레이부 내부에 투명 전극체(230)가 형성될 수도 있다.The display unit 210 is for driving the optical display device 200 and may include an optical element including a substrate and an OLED, an LED, or an LCD element formed on the substrate. In one embodiment, the display unit 210 may include a lower substrate, a thin film transistor, an organic light emitting diode, a planarization layer, a protective film, an insulating film. In another embodiment, the display unit 210 may include an upper substrate, a lower substrate, a liquid crystal layer positioned between the upper substrate and the lower substrate, and a color filter formed on at least one of the upper substrate and the lower substrate. 4 illustrates a structure in which the display unit 210 and the transparent electrode body 230 are separately stacked, but the transparent electrode body 230 may be formed inside the display unit.
편광판(220)은 디스플레이부(210) 상에 형성되어, 내광의 편광을 구현하거나 또는 외광의 반사를 방지하여 디스플레이를 구현하거나 디스플레이의 명암비를 좋게 할 수 있다. 편광판(220)은 편광자 단독이 될 수 있다. 또는, 편광판(220)은 편광자 및 편광자의 일면 또는 양면에 형성된 보호필름을 포함할 수 있다. 도 4에서 도시되지 않았지만, 디스플레이부(210)의 하부에도 편광판이 더 형성되어, 디스플레이의 명암비를 더 좋게 할 수 있다. 이때, 편광판은 점착층에 의해 디스플레이부(210)에 형성될 수 있다.The polarizing plate 220 may be formed on the display unit 210 to implement polarization of internal light or prevent reflection of external light to implement a display or improve contrast ratio of the display. The polarizer 220 may be a polarizer alone. Alternatively, the polarizing plate 220 may include a polarizer and a protective film formed on one or both sides of the polarizer. Although not shown in FIG. 4, a polarizer may be further formed below the display unit 210 to further improve the contrast ratio of the display. In this case, the polarizer may be formed on the display unit 210 by an adhesive layer.
투명 전극체(230)는 편광판(220) 상에 형성되어, 접촉 등에 의해 투명 전극체(230)가 터치될 때 발생되는 커패시턴스의 변화를 감지하여 전기적 신호를 발생시킬 수 있다. 투명 전극체(230)는 기재층(110), 기재층(110)의 일면에 형성된 제1전극(231)과 제2전극(232), 기재층(110)의 다른 일면에 형성된 제3전극(233)과 제4전극(234)을 포함할 수 있다. 도 4는 제3전극(233)과 제4전극(234)/기재층(110)/제1전극(231)과 제2전극(232)의 순서로 적층된 구조를 나타낸 것이나, 기재층(110)/제3전극(233)과 제4전극(234)/기재층(110)/ 제1전극(231)과 제2전극(232)의 순서로 적층될 수도 있다.The transparent electrode body 230 may be formed on the polarizing plate 220, and may generate an electrical signal by detecting a change in capacitance generated when the transparent electrode body 230 is touched by contact or the like. The transparent electrode body 230 may include a base electrode 110, a first electrode 231 formed on one surface of the base layer 110, a second electrode 232, and a third electrode formed on the other side of the base layer 110 ( 233 and the fourth electrode 234. 4 illustrates a structure in which the third electrode 233, the fourth electrode 234, the base layer 110, the first electrode 231, and the second electrode 232 are stacked in the order of the substrate layer 110. ) / Third electrode 233 and fourth electrode 234 / base layer 110 / first electrode 231 and second electrode 232 in this order.
윈도우 필름(240)은 광학표시장치(200)의 최 외곽에 형성되어 광학표시장치(200)를 보호할 수 있다. 윈도우 필름(240)은 유리 기판, 또는 유연성이 있는 플라스틱 기판으로 형성될 수 있다.The window film 240 may be formed on the outermost side of the optical display device 200 to protect the optical display device 200. The window film 240 may be formed of a glass substrate or a flexible plastic substrate.
점착층(250)은 디스플레이부(210)와 편광판(220) 사이, 편광판(220)과 투명 전극체(230) 사이, 투명 전극체(230)와 윈도우 필름(240) 사이에 형성되어, 디스플레이부(210), 편광판(220), 투명 전극체(230), 윈도우 필름(240) 간의 결합을 강하게 할 수 있다. 점착층(250)은 통상의 광학적으로 투명한 점착제로 형성될 수 있다. The adhesive layer 250 is formed between the display unit 210 and the polarizing plate 220, between the polarizing plate 220 and the transparent electrode body 230, and between the transparent electrode body 230 and the window film 240. The bonding between the 210, the polarizing plate 220, the transparent electrode body 230, and the window film 240 may be strengthened. The adhesive layer 250 may be formed of a conventional optically transparent adhesive.
이하, 도 5를 참고하여, 본 발명의 다른 실시예에 따른 광학표시장치를 설명한다. 도 5는 본 발명의 다른 실시예에 따른 광학표시장치의 단면도이다.Hereinafter, an optical display device according to another exemplary embodiment of the present invention will be described with reference to FIG. 5. 5 is a cross-sectional view of an optical display device according to another exemplary embodiment of the present invention.
도 5를 참고하면, 본 발명의 다른 실시예에 따른 광학표시장치(300)는 투명 전극체(230')가 기재층(110), 기재층(110)의 일면에 형성된 제3전극(233)과 제4전극(234)을 포함하고, 윈도우 필름(240')에 제1전극(231)과 제2전극(232)이 더 형성된 것을 제외하고는 본 발명의 일 실시예에 따른 광학표시장치(200)와 실질적으로 동일하다.Referring to FIG. 5, in the optical display device 300 according to another exemplary embodiment, the transparent electrode body 230 ′ is formed of the base layer 110 and the third electrode 233 formed on one surface of the base layer 110. And a fourth electrode 234, except that the first electrode 231 and the second electrode 232 are further formed on the window film 240 ′ according to the exemplary embodiment of the present invention. Substantially the same as 200).
이하, 본 발명의 일 실시예에 따른 투명 도전체의 제조 방법을 설명한다.Hereinafter, a method of manufacturing a transparent conductor according to an embodiment of the present invention.
본 발명의 일 실시예에 따른 투명 도전체의 제조 방법은 금속 나노와이어 분산액을 기재층 상에 코팅하여 금속 나노와이어 분산액 층을 형성하고, 상기 금속 나노와이어 분산액 층 상에 매트릭스용 조성물을 코팅하고, 상기 금속 나노와이어 분산액 층과 매트릭스용 조성물을 경화시키는 단계를 포함할 수 있다.In the method of manufacturing a transparent conductor according to an embodiment of the present invention, a metal nanowire dispersion is coated on a base layer to form a metal nanowire dispersion layer, a composition for a matrix is coated on the metal nanowire dispersion layer, It may include curing the metal nanowire dispersion layer and the composition for the matrix.
금속 나노와이어 분산액은 금속 나노와이어를 함유할 수 있다. 금속 나노와이어 분산액은 용매를 더 포함하여 금속 나노와이어의 코팅성을 더 높일 수 있다. 용매는 물, 알코올 등의 유기 용매 등을 포함할 수 있지만, 이에 제한되지 않는다. 금속 나노와이어 분산액은 바인더, 개시제, 첨가제 등을 더 포함할 수도 있다. 첨가제는 분산제, 증점제 등이 될 수 있다. 바인더는 (메트)아크릴레이트계 단관능 모노머, (메트)아크릴레이트계 다관능 모노머 중 하나 이상을 포함할 수 있다. 분산제는 금속 나노와이어, 바인더의 분산을 높일 수 있다. 증점제는 금속 나노와이어 분산액의 점도를 높일 수 있다. 바인더, 개시제, 및 첨가제 전체는 금속 나노와이어 분산액 중 고형분 기준으로 약 0.1중량% 내지 약 50중량%, 구체적으로 약 5중량% 내지 약 45중량%로 포함될 수 있다. 상기 범위에서, 투명 도전체의 광 특성 향상, 접촉 저항 증가 방지, 내구성 및 내 화학성이 개선될 수 있다. 금속 나노와이어 분산액은 금속 나노와이어 함유 용액 예를 들면 상업적으로 시판되는 Cambrios사의 제품(예:ClearOhm Ink)에 상기 용매를 혼합하여 제조될 수 있다.The metal nanowire dispersion may contain metal nanowires. The metal nanowire dispersion may further include a solvent to further increase the coating property of the metal nanowire. The solvent may include an organic solvent such as water and alcohol, but is not limited thereto. The metal nanowire dispersion may further include a binder, an initiator, an additive, and the like. The additives can be dispersants, thickeners and the like. The binder may include one or more of a (meth) acrylate-based monofunctional monomer and a (meth) acrylate-based polyfunctional monomer. The dispersant can increase the dispersion of the metal nanowires and the binder. Thickeners can increase the viscosity of the metal nanowire dispersion. The binder, initiator, and additives as a whole can be included from about 0.1% to about 50% by weight, specifically from about 5% to about 45% by weight solids in the metal nanowire dispersion. In the above range, the optical properties of the transparent conductor may be improved, the contact resistance may be prevented from increasing, and the durability and chemical resistance may be improved. Metal nanowire dispersions can be prepared by mixing the solvent in a metal nanowire-containing solution, such as a commercially available product of Cambrios (eg ClearOhm Ink).
매트릭스용 조성물은 무기 중공 입자, 불소 함유 모노머 또는 그의 올리고머, 감광성 수지, 가교제 및 개시제를 포함하는 매트릭스용 조성물로 형성될 수 있다.The composition for a matrix can be formed from the composition for a matrix containing an inorganic hollow particle, a fluorine-containing monomer or an oligomer, photosensitive resin, a crosslinking agent, and an initiator.
그런 다음, 금속 나노와이어 분산액을 기재층 상에 코팅하여 금속 나노와이어 분산액 층을 형성하고, 상기 금속 나노와이어 분산액 층 상에 매트릭스용 조성물을 코팅하고, 금속 나노와이어 분산액 층과 매트릭스용 조성물을 경화시킴으로써 투명 도전층을 형성할 수 있다. 코팅은 바 코팅, 슬롯 다이 코팅, 그라비아 코팅, 롤-투-롤(roll-to-roll) 코팅으로 수행될 수 있지만, 이에 제한되지 않는다. 코팅 두께는 약 1㎛ 이상 약 2㎛ 이하, 더 구체적으로 약 1㎛ 이상 약 1.7㎛ 이하가 될 수 있다. 경화는 투명 도전층을 형성하고 투명 도전층의 강도를 높일 수 있다. 경화는 열 경화, 광 경화 중 하나 이상을 포함할 수 있다. 열 경화는 약 40℃ 내지 약 180℃, 약 1분 내지 약 48시간 동안 수행될 수 있다. 광 경화는 UV 조사량 약 50mJ/cm2 내지 약 1,000mJ/cm2으로 수행될 수 있다. 투명 도전층용 도막을 경화시키기 전에 투명 도전층용 도막을 건조시켜, 경화 시간을 단축시킬 수 있다. 건조는 약 40℃ 내지 약 180℃, 약 1분 내지 약 48시간 동안 수행될 수 있다.Then, by coating the metal nanowire dispersion on the substrate layer to form a metal nanowire dispersion layer, coating the composition for the matrix on the metal nanowire dispersion layer, and curing the metal nanowire dispersion layer and the composition for the matrix A transparent conductive layer can be formed. Coating may be performed by bar coating, slot die coating, gravure coating, roll-to-roll coating, but is not limited thereto. The coating thickness may be about 1 μm or more and about 2 μm or less, more specifically about 1 μm or more and about 1.7 μm or less. Curing can form a transparent conductive layer and can raise the intensity | strength of a transparent conductive layer. Curing may include one or more of thermal curing, light curing. Thermal curing may be performed for about 40 ° C. to about 180 ° C., about 1 minute to about 48 hours. Light curing may be performed with a UV dose of about 50 mJ / cm 2 to about 1,000 mJ / cm 2 . Before hardening the coating film for transparent conductive layers, the coating film for transparent conductive layers can be dried, and hardening time can be shortened. Drying may be performed for about 40 ° C. to about 180 ° C., for about 1 minute to about 48 hours.
이하, 본 발명의 바람직한 실시예를 통해 본 발명의 구성 및 작용을 더욱 상세히 설명하기로 한다. 다만, 이는 본 발명의 바람직한 예시로 제시된 것이며 어떠한 의미로도 이에 의해 본 발명이 제한되는 것으로 해석될 수는 없다.Hereinafter, the configuration and operation of the present invention through the preferred embodiment of the present invention will be described in more detail. However, this is presented as a preferred example of the present invention and in no sense can be construed as limiting the present invention.
실시예Example 1 One
은 나노와이어 함유 용액(Clearohm ink, Cambrios사, 은 나노와이어 등의 고형분 2중량%) 45중량부를 초순수 증류수 55중량부에 넣고 교반하여 은 나노와이어 분산액을 제조하였다.A silver nanowire dispersion was prepared by adding 45 parts by weight of a silver nanowire-containing solution (2 wt% solid content such as Clearohm ink, Cambrios, silver nanowires, etc.) to 55 parts by weight of ultrapure distilled water.
중공 실리카 및 불소 함유 모노머 함유 용액(Pelnox사, A-2505, 중공 실리카, 불소 함유 모노머 및 개시제 포함, 굴절률:1.33) 37중량부, 감광성 수지로 노볼락 수지 함유 용액(Showa Denko사, RY-25) 13중량부, 가교제로 헥사메톡시메틸 멜라민 함유 용액 34중량부, 개시제로 옥심 에스테르계 개시제 PBG304 함유 용액(DKSH사, 1-[9-에틸-6-(2-메틸벤조일)-9H-카르바졸-3-일]-3-시클로펜틸프로파논-1-(O-아세틸옥심)) 16중량부를 포함시키고, 용매 프로필렌글리콜모노메틸에테르아세테이트를 첨가하여 고형분 농도가 1.6중량%인 매트릭스용 조성물을 제조하였다. 매트릭스용 조성물은 고형분 기준으로 중공 실리카 및 불소 함유 모노머의 총 합 37중량%, 노볼락 수지 52중량%, 헥사메톡시메틸 멜라민 3중량%, 옥심 에스테르계 개시제 8중량%로 포함하였다.Hollow silica and fluorine-containing monomer containing solution (Pelnox, A-2505, hollow silica, containing fluorine-containing monomer and initiator, refractive index: 1.33) 37 parts by weight, solution containing novolak resin with photosensitive resin (Showa Denko, RY-25 ) 13 parts by weight, 34 parts by weight of a solution containing hexamethoxymethyl melamine as a crosslinking agent, a solution containing an oxime ester initiator PBG304 as an initiator (DKSH, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-car 16 parts by weight of bazol-3-yl] -3-cyclopentylpropanone-1- (O-acetyloxime)) and a solvent propylene glycol monomethyl ether acetate were added to the composition for the matrix having a solid content concentration of 1.6% by weight. Prepared. The composition for the matrix included 37% by weight of the total of the hollow silica and the fluorine-containing monomer, 52% by weight of the novolak resin, 3% by weight of hexamethoxymethyl melamine, and 8% by weight of the oxime ester initiator.
기재층(폴리카보네이트 필름, Teijin, 두께:50㎛)에, 제조한 은 나노와이어 분산액을 스핀 코터로 코팅하고, 140℃ 오븐에서 90초 건조시키고, 이어서 제조한 매트릭스용 조성물을 바 코터로 코팅한 후, 80℃ 오븐에서 120초, 건조하여 두께 1.2㎛의 투명 도전층을 형성함으로써, 투명 도전체를 제조하였다.On the substrate layer (polycarbonate film, Teijin, thickness: 50㎛), the prepared silver nanowire dispersion was coated with a spin coater, dried for 90 seconds in an oven at 140 ℃, and then the composition for the matrix was coated with a bar coater Thereafter, the transparent conductor was manufactured by drying in an oven at 80 ° C. for 120 seconds to form a transparent conductive layer having a thickness of 1.2 μm.
실시예Example 2 2
실시예 1에서, 투명 도전층의 두께를 1.7㎛로 변경하여 제조한 것을 제외하고는 동일한 방법으로, 투명 도전체를 제조하였다.In Example 1, a transparent conductor was manufactured in the same manner except that the thickness of the transparent conductive layer was changed to 1.7 μm.
실시예Example 3 3
실시예 1과 동일한 방법으로 은 나노와이어 함유 용액을 제조하였다.A silver nanowire-containing solution was prepared in the same manner as in Example 1.
중공 실리카 및 불소 함유 모노머 함유 용액(Pelnox사, A-2505, 중공 실리카, 불소 함유 모노머 및 개시제 포함, 굴절률: 1.33) 33중량부, 감광성 수지로 노볼락 수지 함유 용액(Showa Denko사, RY-25) 11중량부, 가교제로 헥사메톡시메틸 멜라민 함유 용액 16중량부, 개시제로 옥심 에스테르계 개시제 PBG304 함유 용액(DKSH사, 1-[9-에틸-6-(2-메틸벤조일)-9H-카르바졸-3-일]-3-시클로펜틸프로파논-1-(O-아세틸옥심)) 16중량부, 부착 증진제로 2-(3,4-에폭시시클로헥실)에틸트리메톡시실란(신예츠사, KBM-303) 10중량부를 포함시키고, 용매 프로필렌글리콜모노메틸에테르아세테이트를 첨가하여 고형분 농도가 1.6중량%인 매트릭스용 조성물을 제조하였다. 매트릭스용 조성물은 고형분 기준으로 중공 실리카 및 불소 함유 모노머 33중량%, 노볼락 수지 46중량%, 헥사메톡시메틸 멜라민 3중량%, 옥심 에스테르계 개시제 8중량%, 2-(3,4-에폭시시클로헥실)에틸트리메톡시실란 10중량%로 포함하였다.Hollow silica and fluorine-containing monomer containing solution (Pelnox, A-2505, hollow silica, containing fluorine-containing monomer and initiator, refractive index: 1.33) 33 parts by weight, solution containing novolak resin with photosensitive resin (Showa Denko, RY-25 ) 11 parts by weight, solution containing hexamethoxymethyl melamine as crosslinking agent, 16 parts by weight, solution containing oxime ester initiator PBG304 as initiator (DKSH, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-car 16 parts by weight of bazol-3-yl] -3-cyclopentylpropanone-1- (O-acetyloxime)), 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane (Shin Yetsu Co., Ltd.) as an adhesion promoter. KBM-303) 10 parts by weight and a solvent propylene glycol monomethyl ether acetate were added to prepare a composition for the matrix having a solid content concentration of 1.6% by weight. Composition for the matrix is 33% by weight hollow silica and fluorine-containing monomer, 46% by weight novolak resin, 3% by weight hexamethoxymethyl melamine, 8% by weight oxime ester initiator, 2- (3,4-epoxycyclo Hexyl) ethyltrimethoxysilane at 10% by weight.
상기 제조한 은 나노와이어 함유 용액과 매트릭스용 조성물을 사용하여 실시예 1과 동일한 방법으로, 두께 1.1㎛의 투명 도전층을 갖는 투명 도전체를 제조하였다.A transparent conductor having a transparent conductive layer with a thickness of 1.1 μm was prepared in the same manner as in Example 1 using the prepared silver nanowire-containing solution and the composition for a matrix.
비교예Comparative example 1 One
실시예 1과 동일한 방법으로 은 나노와이어 함유 용액을 제조하였다.A silver nanowire-containing solution was prepared in the same manner as in Example 1.
디펜타에리트리톨헥사아크릴레이트(DPHA, Entis사) 37중량부, 감광성 수지로 노볼락 수지 함유 용액(Showa Denko사, RY-25) 13중량부, 가교제로 헥사메톡시메틸 멜라민 함유 용액 34중량부, 개시제로 옥심 에스테르계 개시제 PBG304 함유 용액(DKSH사, 1-[9-에틸-6-(2-메틸벤조일)-9H-카르바졸-3-일]-3-시클로펜틸프로파논-1-(O-아세틸옥심)) 16중량부를 포함시키고, 용매 프로필렌글리콜모노메틸에테르아세테이트를 첨가하여 고형분 농도가 1.6중량%인 매트릭스용 조성물을 제조하였다. 매트릭스용 조성물은 고형분 기준으로 디펜타에리트리톨헥사아크릴레이트 37중량%, 노볼락 수지 52중량%, 헥사메톡시메틸 멜라민 3중량%, 옥심 에스테르계 개시제 8중량%로 포함하였다.37 parts by weight of dipentaerythritol hexaacrylate (DPHA, Entis), 13 parts by weight of a novolak resin-containing solution (Showa Denko, RY-25) as a photosensitive resin, 34 parts by weight of a solution containing hexamethoxymethyl melamine as a crosslinking agent Solution containing an oxime ester-based initiator PBG304 as an initiator (DKSH, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -3-cyclopentylpropanone-1- ( 16 parts by weight of O-acetyl oxime)) and a solvent propylene glycol monomethyl ether acetate were added to prepare a composition for a matrix having a solid content concentration of 1.6% by weight. The composition for the matrix contained 37% by weight of dipentaerythritol hexaacrylate, 52% by weight of novolak resin, 3% by weight of hexamethoxymethyl melamine, and 8% by weight of oxime ester initiator.
상기 제조한 은 나노와이어 함유 용액과 매트릭스용 조성물을 사용하여 실시예 1과 동일한 방법으로, 두께 1.2㎛의 투명 도전층을 갖는 투명 도전체를 제조하였다. A transparent conductor having a transparent conductive layer with a thickness of 1.2 μm was prepared in the same manner as in Example 1 using the prepared silver nanowire-containing solution and the composition for a matrix.
비교예Comparative example 2 2
실시예 1과 동일한 방법으로 은 나노와이어 함유 용액을 제조하였다.A silver nanowire-containing solution was prepared in the same manner as in Example 1.
감광성 수지로 노볼락 수지 함유 용액(Showa Denko사, RY-25) 30중량부, 가교제로 헥사메톡시메틸 멜라민 함유 용액 47중량부, 개시제로 옥심 에스테르계 개시제 PBG304 함유 용액(DKSH사, 1-[9-에틸-6-(2-메틸벤조일)-9H-카르바졸-3-일]-3-시클로펜틸프로파논-1-(O-아세틸옥심)) 23중량부를 포함시키고, 용매 프로필렌글리콜모노메틸에테르아세테이트를 첨가하여 고형분 농도가 1.6중량%인 매트릭스용 조성물을 제조하였다. 매트릭스용 조성물은 고형분 기준으로 노볼락 수지 89중량%, 헥사메톡시메틸 멜라민 3중량%, 옥심 에스테르계 개시제 8중량%로 포함하였다.30 parts by weight of a novolak resin-containing solution (Showa Denko, RY-25) as a photosensitive resin, 47 parts by weight of a solution containing hexamethoxymethyl melamine as a crosslinking agent, a solution containing an oxime ester initiator PBG304 as a initiator (DKSH, 1- [ 9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -3-cyclopentylpropaneone-1- (O-acetyloxime)) 23 parts by weight, and solvent propylene glycol monomethyl Etheracetate was added to prepare a matrix composition having a solid concentration of 1.6% by weight. The composition for the matrix contained 89% by weight of novolak resin, 3% by weight of hexamethoxymethyl melamine, and 8% by weight of oxime ester initiator.
상기 제조한 은 나노와이어 함유 용액과 매트릭스용 조성물을 사용하여 실시예 1과 동일한 방법으로, 두께 1.2㎛의 투명 도전층을 갖는 투명 도전체를 제조하였다.A transparent conductor having a transparent conductive layer with a thickness of 1.2 μm was prepared in the same manner as in Example 1 using the prepared silver nanowire-containing solution and the composition for a matrix.
실시예와 비교예의 투명 도전체에 대해 하기 물성을 평가하고, 그 결과를 하기 표 1에 나타내었다.The physical properties of the transparent conductors of Examples and Comparative Examples were evaluated, and the results are shown in Table 1 below.
(1)패턴 형성성과 부착성: 실시예와 비교예의 투명 도전체 상에, 선폭 30㎛의 패턴이 형성된 패턴 마스크(에칭부의 선폭30㎛/비에칭부의 선폭 30㎛)를 사용하여 50mJ/cm2로 자외선 노광하였다. 노광된 샘플을 현상액인 트리메틸암모늄 하이드록사이드(trimethylammonium hydroxide) 5% 수용액에 넣고 30초 동안 현상하고, 제1차 세정하고, 이를 120℃ 오븐에서 3분간 베이킹 후 200mJ/cm2로 자외선 노광하여 패턴층을 형성하였다. 패턴층이 형성된 투명 도전체를 25℃의 에칭액(Al etchant, 85중량% 농도의 인산 수용액 75중량 % 내지 85중량%, 70중량% 농도의 질산 수용액 3중량% 내지10중량%, 99.7%중량% 농도의 아세트산 수용액 5중량% 내지 20중량%의 혼합액(Transene사 Aluminum etchant type A))에 침지하여 에칭하고 제2차 세정하였다. 상기 제2차 세정된 투명 도전체의 에칭부의 선폭을 광학 현미경(MX-50, 올림푸스)으로 관찰하고, 형성된 에칭부의 선폭의 표준 편차를 구하였다. 표준 편차가 10% 이하이고 패턴 형성 모양이 양호한 경우 ◎, 표준 편차가 10% 초과 20% 이하이고 패턴 형성 모양이 양호한 경우 ○, 표준 편차가 20% 초과이고 부분적으로 패턴이 형성되지 않은 경우 △, 패턴이 전혀 형성되지 않은 경우 x로 평가하였다. 현상하고 제1차 세정 후, 투명 도전층이 기재층으로부터 전혀 박리되지 않은 경우 ○, 투명 도전층이 일부 박리된 경우 △, 투명 도전층이 완전히 박리된 경우 x로 평가하였다.(1) Pattern Formability and Adhesiveness: 50 mJ / cm 2 using a pattern mask (line width of 30 μm / line width of non-etching part) having a pattern having a line width of 30 μm on the transparent conductors of Examples and Comparative Examples. Ultraviolet light exposure was performed. The exposed sample was placed in a 5% aqueous solution of trimethylammonium hydroxide as a developer, developed for 30 seconds, first washed, baked for 3 minutes in a 120 ° C. oven, and then exposed to ultraviolet light at 200 mJ / cm 2 to form a pattern. A layer was formed. The transparent conductor on which the pattern layer was formed was etched at 25 ° C. (Al etchant, 75% to 85% by weight of an aqueous solution of phosphoric acid at a concentration of 85% by weight, 3% to 10% by weight of a nitric acid solution at a concentration of 70% by weight, 99.7% by weight It was immersed in a mixed solution (Aluminum etchant type A of Transene) of 5% to 20% by weight of an acetic acid solution at a concentration, and etched and washed secondly. The line width of the etching portion of the second washed transparent conductor was observed with an optical microscope (MX-50, Olympus), and the standard deviation of the line width of the formed etching portion was determined. ◎ when the standard deviation is 10% or less and the pattern formation shape is good ◎, when the standard deviation is more than 10% and 20% or less and the pattern formation shape is good ○, when the standard deviation is more than 20% and the pattern is not partially formed △, If no pattern was formed, it was evaluated as x. After the development and the first washing, the case where the transparent conductive layer was not peeled off from the substrate layer at all, was evaluated as x when the transparent conductive layer was partially peeled off and the transparent conductive layer was completely peeled off.
(2)헤이즈와 전광선 투과율: 실시예와 비교예의 투명 도전체에 대해 도전층을 광원으로 향하게 하고 파장 400nm 내지 700nm에서 헤이즈미터(NDH-2000, NIPPON DENSHOKU)를 사용하여 헤이즈와 전광선 투과율을 측정하였다.(2) Haze and total light transmittance: Haze and total light transmittance were measured using a haze meter (NDH-2000, NIPPON DENSHOKU) at a wavelength of 400 nm to 700 nm for the transparent conductors of Examples and Comparative Examples with the conductive layer facing the light source. .
(3)면저항: 실시예와 비교예의 투명 도전체에 대해 비접촉식 면저항 측정기(EC-80P, NAPSON)를 사용하여 면저항을 측정하였다. 면저항은 패터닝하지 않은 투명 도전층에 대해 측정하였다.(3) Sheet resistance: The sheet resistance was measured using the non-contact sheet resistance measuring instrument (EC-80P, NAPSON) about the transparent conductor of an Example and a comparative example. Sheet resistance was measured for the unpatterned transparent conductive layer.
중공 실리카 및 불소 함유 모노머 함유 용액Hollow silica and fluorine-containing monomer solution 감광성 수지Photosensitive resin DPHADPHA 부착 증진제Adhesion promoter 투명 도전층 두께(㎛)Transparent conductive layer thickness (㎛) 패턴 형성성Pattern formability 부착성Adhesion 헤이즈(%)Haze (%) 전광선 투과율(%)Total light transmittance (%) 면저항(Ω/□)Sheet resistance (Ω / □)
실시예 1Example 1 포함include 포함include 미포함Without 미포함Without 1.21.2   ○ 1.371.37 91.2391.23 25.9025.90
실시예 2Example 2 포함include 포함include 미포함Without 미포함Without 1.71.7 1.331.33 91.1691.16 25.6925.69
실시예 3Example 3 포함include 포함include 미포함Without 포함include 1.11.1 1.391.39 91.1991.19 26.2626.26
비교예 1Comparative Example 1 미포함Without 포함include 포함include 미포함Without 1.21.2 1.601.60 89.2189.21 24.9024.90
비교예 2Comparative Example 2 미포함Without 포함include 미포함Without 미포함Without 1.21.2 XX 1.591.59 88.9288.92 25.5025.50
상기 표 1과 같이, 본 실시예에 따른 투명 도전체는 포토레지스트 없이 패터닝될 수 있어서 생산성이 우수하고, 패턴 형성 능력이 우수하고, 기재층에 대한 부착성이 우수하여 패터닝시 현상 및/또는 세정 등에 영향을 받지 않아서 기재층으로부터 박리되지 않았다. 또한, 본 실시예에 따른 투명 도전체는 광학적 특성이 우수하고, 면저항이 낮아 도전성이 우수하였다.As shown in Table 1, the transparent conductor according to the present embodiment can be patterned without a photoresist, thereby providing excellent productivity, excellent pattern forming ability, and excellent adhesion to the substrate layer. It was not affected by the back and the like and did not peel off from the substrate layer. In addition, the transparent conductor according to the present embodiment was excellent in optical characteristics and low in sheet resistance, thereby being excellent in conductivity.
그러나, 중공 실리카 입자 및 불소 함유 모노머를 함유하지 않는 비교예는 패턴 형성성이 좋지 않았고, 패터닝 후 투명 도전층이 기재층으로부터 박리되어 부착성이 좋지 않았다.However, the comparative example which does not contain a hollow silica particle and a fluorine-containing monomer was inferior in pattern formation property, and after patterning, the transparent conductive layer peeled off from the base material layer, and was not good in adhesiveness.
본 발명의 단순한 변형 내지 변경은 이 분야의 통상의 지식을 가진 자에 의하여 용이하게 실시될 수 있으며, 이러한 변형이나 변경은 모두 본 발명의 영역에 포함되는 것으로 볼 수 있다.Simple modifications and variations of the present invention can be easily made by those skilled in the art, and all such modifications or changes can be seen to be included in the scope of the present invention.

Claims (14)

  1. 기재층 및 상기 기재층 상에 형성된 투명 도전층을 포함하고,A base layer and a transparent conductive layer formed on the base layer;
    상기 투명 도전층은 금속 나노와이어 및 상기 금속 나노와이어가 함침된 매트릭스를 포함하고,The transparent conductive layer includes a metal nanowire and a matrix impregnated with the metal nanowire,
    상기 매트릭스는 무기 중공 입자, 불소 함유 모노머 또는 그의 올리고머, 감광성 수지, 가교제 및 개시제를 포함하는 매트릭스용 조성물로 형성된 것인, 투명 도전체.The matrix is formed of a composition for a matrix containing an inorganic hollow particle, a fluorine-containing monomer or an oligomer thereof, a photosensitive resin, a crosslinking agent and an initiator.
  2. 제1항에 있어서, 상기 투명 도전층은 두께가 약 1㎛ 이상 약 2㎛ 이하인 것인, 투명 도전체.The transparent conductor of claim 1, wherein the transparent conductive layer has a thickness of about 1 μm or more and about 2 μm or less.
  3. 제1항에 있어서, 상기 금속 나노와이어는 상기 매트릭스에 완전히 함침된 것인, 투명 도전체.The transparent conductor of claim 1, wherein the metal nanowires are fully impregnated with the matrix.
  4. 제1항에 있어서, 상기 금속 나노와이어는 은 나노와이어를 포함하는 것인, 투명 도전체.The transparent conductor of claim 1, wherein the metal nanowires comprise silver nanowires.
  5. 제1항에 있어서, 상기 무기 중공 입자 및 불소 함유 모노머 또는 그의 올리고머 전체 또는 상기 무기 중공 입자 및 불소 함유 모노머 또는 그의 올리고머 전체를 함유하는 용액은 굴절률이 약 1.42 이하인 것인, 투명 도전체.The transparent conductor according to claim 1, wherein the solution containing all of the inorganic hollow particles and the fluorine-containing monomer or the oligomer thereof or all of the inorganic hollow particles and the fluorine-containing monomer or the oligomer thereof has a refractive index of about 1.42 or less.
  6. 제1항에 있어서, 상기 감광성 수지는 노볼락 수지, 방향족 탄화수소포름알데히드 수지 변성 페놀 수지, 디시클로펜타디엔페놀 부가형 수지, 페놀아랄킬 수지, 나프톨아랄킬 수지, 트리메틸올메탄 수지, 테트라페닐올에탄 수지, 비페닐 변성 페놀수지, 비페닐 변성 나프톨 수지, 아미노트리아진 변성 페놀 수지 중 하나 이상을 포함하는 것인, 투명 도전체.The method of claim 1, wherein the photosensitive resin is novolak resin, aromatic hydrocarbon formaldehyde resin modified phenol resin, dicyclopentadiene phenol addition resin, phenol aralkyl resin, naphthol aralkyl resin, trimethylol methane resin, tetraphenylol ethane A transparent conductor comprising at least one of a resin, a biphenyl-modified phenol resin, a biphenyl-modified naphthol resin, and an aminotriazine-modified phenol resin.
  7. 제1항에 있어서, 상기 가교제는 멜라민계 화합물, 구아나민계 화합물, 글리콜우릴계 화합물, 우레아계 화합물, 레졸 수지, 에폭시계 화합물, 이소시아네이트계 화합물, 아지드계 화합물, 알케닐에테르기를 포함하는 화합물, 산 무수물계 화합물, 옥사졸린계 화합물 중 하나 이상을 포함하는 것인, 투명 도전체.The compound of claim 1, wherein the crosslinking agent includes a melamine compound, a guanamine compound, a glycoluril compound, a urea compound, a resol resin, an epoxy compound, an isocyanate compound, an azide compound, and an alkenyl ether group. A transparent conductor comprising at least one of an acid anhydride compound and an oxazoline compound.
  8. 제1항에 있어서, 상기 매트릭스용 조성물은 고형분 기준으로 상기 무기 중공 입자와 상기 불소 함유 모노머 또는 그의 올리고머 전체 약 20중량% 내지 약 40중량%, 상기 감광성 수지 약 40중량% 내지 60중량%, 상기 가교제 약 1중량% 내지 약 5중량%, 상기 개시제 약 1중량% 내지 약 10중량%를 포함하는 것인, 투명 도전체.The composition of claim 1, wherein the composition for the matrix is about 20% to about 40% by weight of the inorganic hollow particles and the fluorine-containing monomer or oligomer thereof, and about 40% to 60% by weight of the photosensitive resin. And about 1% to about 5% by weight crosslinking agent, and about 1% to about 10% by weight of the initiator.
  9. 제1항에 있어서, 상기 매트릭스용 조성물은 부착증진제, 산화방지제 중 하나 이상을 더 포함하는 것인, 투명 도전체.The transparent conductor of claim 1, wherein the matrix composition further comprises at least one of an adhesion promoter and an antioxidant.
  10. 제9항에 있어서, 상기 매트릭스용 조성물은 고형분 기준으로 상기 무기 중공 입자와 상기 불소 함유 모노머 또는 그의 올리고머 전체 약 20중량% 내지 약 40중량%, 상기 감광성 수지 약 40중량% 내지 60중량%, 상기 가교제 약 1중량% 내지 약 5중량%, 상기 개시제 약 1중량% 내지 약 10중량%, 상기 부착증진제 약 5중량% 내지 약 15중량%를 포함하는 것인, 투명 도전체.The composition of claim 9, wherein the composition for the matrix is about 20 wt% to about 40 wt% of the inorganic hollow particles and the fluorine-containing monomer or oligomer thereof, and about 40 wt% to 60 wt% of the photosensitive resin. About 1% to about 5% by weight of the crosslinking agent, about 1% to about 10% by weight of the initiator, and about 5% to about 15% by weight of the adhesion promoter.
  11. 제1항에 있어서, 상기 투명 도전체는 파장 400nm 내지 700nm에서 전광선 투과율이 약 90% 이상인 것인, 투명 도전체.The transparent conductor of claim 1, wherein the transparent conductor has a total light transmittance of about 90% or more at a wavelength of 400 nm to 700 nm.
  12. 제1항에 있어서, 상기 기재층은 기능층을 더 포함하는 것인, 투명 도전체.The transparent conductor of claim 1, wherein the base layer further comprises a functional layer.
  13. 제1항에 있어서, 상기 투명 도전층은 패턴화된 것인, 투명 도전체.The transparent conductor of claim 1, wherein the transparent conductive layer is patterned.
  14. 제1항 내지 제13항 중 어느 한 항의 투명 도전체를 포함하는 디스플레이 장치.A display device comprising the transparent conductor of claim 1.
PCT/KR2017/001449 2016-06-30 2017-02-10 Transparent conductor and display device including same WO2018004102A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2016-0083067 2016-06-30
KR1020160083067A KR20180003352A (en) 2016-06-30 2016-06-30 Transparent conductor and display apparatus comprising the same

Publications (1)

Publication Number Publication Date
WO2018004102A1 true WO2018004102A1 (en) 2018-01-04

Family

ID=60785489

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2017/001449 WO2018004102A1 (en) 2016-06-30 2017-02-10 Transparent conductor and display device including same

Country Status (2)

Country Link
KR (1) KR20180003352A (en)
WO (1) WO2018004102A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190134534A (en) * 2018-05-25 2019-12-04 신에쓰 가가꾸 고교 가부시끼가이샤 Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150015314A (en) * 2013-07-31 2015-02-10 제일모직주식회사 Transparent conductor and optical display apparatus comprising the same
KR20150048042A (en) * 2013-10-24 2015-05-06 삼성에스디아이 주식회사 Transparent conductor, method for preparing the same and optical display apparatus comprising the same
KR20150065597A (en) * 2013-12-04 2015-06-15 삼성에스디아이 주식회사 Transparent conductor, method for preparing the same, and optical display including the same
KR20150104490A (en) * 2014-03-05 2015-09-15 제일모직주식회사 Transparent conductor and optical display apparatus comprising the same
JP2016046031A (en) * 2014-08-21 2016-04-04 日立化成株式会社 Laminate, method for producing laminate, film set and electronic component

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6094270B2 (en) * 2012-03-06 2017-03-15 デクセリアルズ株式会社 Transparent conductive film, conductive element, composition, input device, display device, and electronic device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150015314A (en) * 2013-07-31 2015-02-10 제일모직주식회사 Transparent conductor and optical display apparatus comprising the same
KR20150048042A (en) * 2013-10-24 2015-05-06 삼성에스디아이 주식회사 Transparent conductor, method for preparing the same and optical display apparatus comprising the same
KR20150065597A (en) * 2013-12-04 2015-06-15 삼성에스디아이 주식회사 Transparent conductor, method for preparing the same, and optical display including the same
KR20150104490A (en) * 2014-03-05 2015-09-15 제일모직주식회사 Transparent conductor and optical display apparatus comprising the same
JP2016046031A (en) * 2014-08-21 2016-04-04 日立化成株式会社 Laminate, method for producing laminate, film set and electronic component

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190134534A (en) * 2018-05-25 2019-12-04 신에쓰 가가꾸 고교 가부시끼가이샤 Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process
KR102295270B1 (en) 2018-05-25 2021-08-27 신에쓰 가가꾸 고교 가부시끼가이샤 Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process

Also Published As

Publication number Publication date
KR20180003352A (en) 2018-01-09

Similar Documents

Publication Publication Date Title
US10620728B2 (en) Touch sensor laminate and method of manufacturing the same
US10802398B2 (en) Touch panel and direct patterning method thereof
WO2013176422A1 (en) Transparent conductive film including hybrid undercoating layer, method for manufacturing same, and touch panel using same
WO2015133599A1 (en) Decorative material-mounting substrate and manufacturing method therefor, touch panel, information display device
WO2018110830A2 (en) Window film, manufacturing method thereof, and display device including same
WO2017188683A1 (en) Touch sensor-integrated color filter and manufacturing method therefor
WO2017171323A2 (en) Method for manufacturing flexible display device
WO2015142077A1 (en) Transparent conductor, method for manufacturing same, and optical display device comprising same
CN111886544B (en) Method for producing cured film and method for producing organic EL display
TW201924935A (en) Photosensitive transfer material, method for manufacturing resin pattern, and method for manufacturing circuit
WO2018131785A1 (en) Window laminate and image display device including same
WO2018004102A1 (en) Transparent conductor and display device including same
KR102408329B1 (en) Film Touch Sensor and Method for Fabricating the Same
KR20170081571A (en) Method of manufacturing circuit board
KR101543802B1 (en) A black photosensitive resin composition color filter and liquid crystal display device having the same
KR101705360B1 (en) A black photosensitive resin composition, color filter and liquid crystal display device having the same
KR102004026B1 (en) Transparent conductor and display apparatus comprising the same
TWI794106B (en) Touch module and touch display module
US11294518B1 (en) Touch panel and device thereof
WO2019160296A1 (en) Flexible touch sensor having color filter integrated therein, and manufacturing method therefor
WO2015046884A1 (en) Uv-curable donor film composition containing fluorine-based resin and uv-curable donor film using same
JP2013205482A (en) Color filter
WO2015046741A1 (en) Photocurable resin composition for donor film and donor film
JP2009234056A (en) Printing method
WO2020204430A1 (en) Deco film, window film and laminate having same, and method for manufacturing same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17820379

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17820379

Country of ref document: EP

Kind code of ref document: A1