WO2017222297A1 - Cellule solaire possédant une jonction sur sa surface arrière et recevant de la lumière à travers ses deux surfaces, et procédé pour la fabriquer - Google Patents

Cellule solaire possédant une jonction sur sa surface arrière et recevant de la lumière à travers ses deux surfaces, et procédé pour la fabriquer Download PDF

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WO2017222297A1
WO2017222297A1 PCT/KR2017/006520 KR2017006520W WO2017222297A1 WO 2017222297 A1 WO2017222297 A1 WO 2017222297A1 KR 2017006520 W KR2017006520 W KR 2017006520W WO 2017222297 A1 WO2017222297 A1 WO 2017222297A1
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electrode
solar cell
finger
passivation layer
conductive
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PCT/KR2017/006520
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Korean (ko)
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최윤석
조은철
오훈
이종철
황명익
경도현
김태준
이지은
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현대중공업그린에너지 주식회사
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    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
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    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to a back-bonded double-sided light-receiving solar cell and a method of manufacturing the same. More particularly, the back-bonded double-sided double-sided light-receiving solar cell is replaced with a plurality of metallic wires to increase the light receiving area and minimize electrical resistance. It relates to a light receiving solar cell and a method of manufacturing the same.
  • a solar cell is a device that receives sunlight and photoelectric conversion.
  • a general solar cell has a structure in which a front electrode and a rear electrode are provided at the front and the rear, respectively. However, as the front electrode is provided on the front surface of the light receiving surface, the light receiving area is reduced by the area of the front electrode.
  • the back electrode solar cell can maximize the light receiving area of the front surface of the solar cell by providing a (+) electrode and a (-) electrode on the back of the solar cell.
  • the conventional solar cell including the back-electrode solar cell has a fundamental limitation in the solar light reception, as the sunlight is received only on either side of the front and rear. Therefore, in recent years, research on a double-sided light-receiving solar cell capable of receiving light on both sides of a front side and a rear side is underway, and an example of a double-sided light-receiving solar cell is disclosed in Korean Patent Publication No. 1998-20311. Both sides of the double-sided light receiving solar cell are provided with finger electrodes and busbar electrodes.
  • Such a double-sided light-receiving solar cell is classified into a front junction type and a back junction type according to the position of the emitter layer.
  • the front junction type is made of p-n junction at the front side of the substrate
  • the back junction type is made of p-n junction at the rear side of the substrate.
  • the front junction type not only the front electrode but also the rear electrode has to be made of Ag, which causes a problem in that the manufacturing cost increases.
  • the back junction type has advantages in that Al can be applied to the rear electrode.
  • the amount of generated current is greater than that of the front junction n type double-sided light receiving solar cell and the p type front electrode solar cell. Due to this there is a problem that the energy loss due to the electrical resistance is increased. Therefore, it is necessary to increase the number of busbar electrodes, but when the number of busbar electrodes is increased, a problem arises that the light receiving area becomes smaller.
  • Patent Document 1 Korean Patent Publication No. 1998-20311
  • the present invention has been made to solve the above problems, in the implementation of the back-bonded double-sided light-receiving solar cell by replacing the bus bar electrode with a plurality of metallic wires can increase the light receiving area and minimize the electrical resistance.
  • An object of the present invention is to provide a back-bonded double-sided light receiving solar cell and a method of manufacturing the same.
  • Back junction double-sided light receiving type solar cell for achieving the above object is a substrate; An emitter layer provided on a lower side of the substrate; A front passivation layer provided on the front surface of the substrate; A back passivation layer provided on the back of the substrate; A front electrode provided on the front passivation layer; And a rear electrode provided on the rear passivation layer, wherein the front electrode and the rear electrode are spaced apart from each other in a direction orthogonal to the plurality of finger electrodes repeatedly arranged and spaced apart from each other. And a plurality of metallic wires, which are repeatedly arranged and disposed at an intersection point of the finger electrode and the metallic wire, and a conductive pad configured to mediate electrical connection between the finger electrode and the metallic wire.
  • the metallic wire is stacked on the conductive pad and electrically connected to the conductive pad.
  • the metallic wire and the conductive pad may be connected by soldering.
  • one end of the metallic wire is connected to an external capacitor.
  • the number of the metallic wires is 6 or less or less than the number of finger electrodes.
  • the finger electrode and the conductive pad of the front electrode are made of the same material, and the finger electrode and the conductive pad of the back electrode are made of different materials.
  • the finger electrode and the conductive pad of the front electrode may be made of Ag
  • the finger electrode of the back electrode may be made of Al
  • the conductive pad of the back electrode may be made of Ag.
  • Method of manufacturing a back-junction double-sided light receiving solar cell comprises the steps of preparing a substrate having a front passivation layer and a back passivation layer; Applying a first conductive paste for forming a finger electrode and a pad paste for forming a conductive pad on the front passivation layer; Applying a second conductive paste for forming a finger electrode and a pad paste for forming a conductive pad on the back passivation layer; Firing the substrate to form finger electrodes and conductive pads on the front passivation layer, and forming finger electrodes and conductive pads on the back passivation layer; Stacking a plurality of metal layer wires in a direction orthogonal to each of a finger electrode of a front electrode and a finger electrode of a back electrode, and placing the conductive pad at an intersection point of the finger electrode and the metal layer wire; And coupling the conductive pad and the metal layer wire to fix the metallic wire and electrically connecting the metallic wire and the finger electrode through the conductive pad.
  • the back-junction double-sided light-receiving solar cell and its manufacturing method according to the present invention have the following effects.
  • the light receiving area can be increased by replacing the busbar electrode with a metallic wire.
  • the number of metallic wires can be increased to minimize the reduction of the light receiving area, thereby reducing the electrical resistance.
  • FIG. 1 is a block diagram of a back-junction double-sided light receiving solar cell according to an embodiment of the present invention.
  • Figures 2a to 2f is a process reference diagram for explaining a method for manufacturing a back-junction double-sided light receiving solar cell according to an embodiment of the present invention.
  • the present invention provides a technique for configuring a front electrode and a back electrode by combining a finger electrode and a metallic wire in implementing a back junction double-sided light receiving solar cell.
  • a double-sided light receiving solar cell capable of receiving sunlight through both sides of a cell is classified into a front junction type and a rear junction type according to a pn junction position, and the front junction type is a front electrode.
  • Both the rear electrode and the rear electrode have to be composed of Ag, and the back junction type can be made of Al in the rear electrode, but the bus bar electrode needs to be increased to reduce energy loss due to the relatively large amount of current. The increase of is accompanied by the problem of decreasing the light receiving area.
  • the present invention takes the advantages of the back-junction double-sided light-receiving solar cell having a large amount of power generation current compared to the front electrode solar cell and the front-junction double-sided light-receiving solar cell, and the electrical resistance of the back-bonded double-sided light-receiving solar cell without reducing the receiving area Present techniques that can be effectively reduced.
  • the present invention proposes a technique for configuring the front electrode and the rear electrode of the back-junction double-sided light receiving solar cell as a combination of finger electrodes and metallic wires, respectively.
  • the metallic wire of the present invention replaces the busbar electrodes and interconnectors of the prior art.
  • a carrier collected by a finger electrode is transferred to an external capacitor through an interconnector via a bus bar electrode.
  • the metallic wire is electrically connected to the finger electrode to transfer the carrier collected by the finger electrode to an external capacitor or the like. That is, the metallic wire plays a role of the bus bar electrode and the interconnector.
  • the metallic wire applied to the present invention has a diameter (in one embodiment, a diameter of 360 ⁇ m) that is significantly smaller compared to the width of the busbar electrode, and thus the light receiving area is compared with the structure to which the busbar electrode is applied. It is possible to increase the number of metallic wires without shrinking and to solve the high electrical resistance problem of the back-bonded double-sided light receiving solar cell through the increased metallic wires without substantial reduction of the light receiving area.
  • Al can be applied as a back electrode of a back junction double-sided light-receiving solar cell, but Al has a low electrical conductivity compared to Ag, but the effect of reducing the light receiving area is significantly lower than that of the bus bar electrode.
  • a back-junction double-sided light receiving solar cell includes a front electrode and a rear electrode.
  • the front electrode is provided on the front passivation layer 150 provided on the front surface of the substrate 110, and the rear electrode is provided on the back passivation layer 130 provided on the rear surface of the substrate 110 to emitter layer ( 120 is electrically connected.
  • the substrate 110 is a silicon substrate 110 of a first conductivity type (e.g., n-type), and an emitter layer of a second conductivity type (e.g., p-type) on the lower side of the substrate 110. 120 is provided.
  • a rear passivation layer 130 is provided on the emitter layer 120, and a rear electrode electrically connected to the emitter layer 120 is provided on the rear passivation layer 130.
  • a front field layer (n +) 140 is provided on an upper side of the inside of the substrate 110, a front passivation layer 150 is provided on the front field layer (n +) 140, and the front passivation layer 150 is provided.
  • On the front surface is provided with a front electrode electrically connected to the front field layer (n +) 140.
  • the structure of the front electrode and the back electrode is as follows.
  • the front electrode includes a finger electrode 161, a conductive pad 162, and a metallic wire 180.
  • the finger electrode 161 collects a carrier generated by photoelectric conversion, and is repeatedly disposed spaced apart along one direction of the substrate 110. That is, the plurality of finger electrodes 161 are formed to be spaced apart and arranged in parallel on the front passivation layer 150.
  • the metallic wire 180 transfers the carrier collected by the finger electrode 161 to an external capacitor (not shown) or the like, and is repeatedly spaced apart from the finger electrode 161 in a direction perpendicular to the finger electrode 161.
  • the plurality of finger electrodes 161 are spaced apart from each other in a first direction (eg, in a horizontal direction), and the plurality of metallic wires 180 are arranged in a second direction (eg, in a vertical direction) perpendicular to the first direction. ), So that they are spaced apart and arranged along
  • the number of the metallic wires 180 is not limited, but it is preferable that the number of the metallic wires 180 is 6 or less and less than the number of the finger electrodes 161.
  • the plurality of finger electrodes 161 and the plurality of metallic wires 180 are disposed to be orthogonal to each other, an intersection point of the finger electrodes 161 and the metallic wires 180 exists, and the conductive pads 162 are disposed at the crossing points. Is provided.
  • the conductive pad 162 is provided between the finger electrode 161 and the metallic wire 180 to lower the electrical resistance of the finger electrode 161 and the metallic wire 180.
  • the conductive pad 162 may be provided at all intersection points of the finger electrode 161 and the metallic wire 180 or may be selectively provided at some intersection points of all the intersection points.
  • the finger electrode 161 and the conductive pad 162 may be composed of Ag as a main component
  • the metallic wire 180 may be made of a metal compound based on iron (Fe) and tin (Sn).
  • the back electrode includes a finger electrode 171, a conductive pad 172, and a metallic wire 180.
  • the plurality of finger electrodes 171, the conductive pads 172, and the plurality of metallic wires 180 constituting the rear electrode have the same shape as the front electrode. That is, the plurality of finger electrodes 171 are spaced apart and disposed along the first direction (eg, the horizontal direction), and the plurality of metallic wires 180 are orthogonal to the first direction (eg, the second direction). It is spaced apart and disposed along the vertical direction, and a conductive pad 172 is provided between the finger electrode 171 and the metallic wire 180 at the intersection of the finger electrode 171 and the metallic wire 180.
  • the front electrode and the rear electrode are different in the material of the finger electrode 171.
  • the finger electrode 171 of the front electrode has Ag as the main component
  • the finger electrode 171 of the back electrode has the metal of the second conductivity type (p type), for example, Al.
  • the reason why the finger electrode 171 of the back electrode is composed mainly of Al is for forming a back surface field (BSF) layer on the back surface of the substrate 110.
  • BSF back surface field
  • the metallic wires 180 of the rear electrode are not limited to the number of metallic wires 180 of the front electrode, but are preferably six or more and constitute the number of finger electrodes 171 or less.
  • the conductive pad 172 of the back electrode may be provided at all intersections of the finger electrode 171 and the metallic wire 180 or may be selectively provided at some intersections of all intersections.
  • the substrate 110 having the front passivation layer 150 and the back passivation layer 130 is prepared.
  • the substrate 110 is a silicon substrate 110 of a first conductivity type (eg, n-type).
  • the front side electric field layer (n +) 140 is provided on the upper side of the inside of the substrate 110, and the front passivation layer 150 is provided on the upper side of the front electric field layer (n +) 140, that is, the entire surface of the substrate 110. do.
  • an emitter layer 120 of a second conductivity type eg, p-type
  • the back passivation layer 130 is provided on the emitter layer 120, that is, on the back of the substrate 110.
  • the front electrode and the back electrode forming process are performed.
  • the process of forming the front electrode and the process of forming the back electrode proceeds sequentially, regardless of the order.
  • the front electrode forming process first the first conductive paste 10 for forming a finger electrode is applied on the front passivation layer 150 (see Fig. 2b).
  • the first conductive paste 10 is applied in a repeating manner spaced apart along the first direction (eg, the horizontal direction). That is, the plurality of first conductive pastes 10 are applied on the front passivation layer 150 in the form of being spaced apart and arranged in parallel in the first direction.
  • a pad paste 20 for forming a conductive pad is coated on the front passivation layer 150 corresponding to the intersection of the finger electrode and the metallic wire 180.
  • the pad paste 20 may be applied to all intersection points of the finger electrode and the metallic wire 180 or may be selectively applied only to some intersection points.
  • the first conductive paste 10 and the pad paste have Ag as a main component, and the first conductive paste 10 and the pad paste 20 may be applied by screen printing. In addition, the first conductive paste 10 and the pad paste 20 may be applied simultaneously through a single process.
  • the application process of the second conductive paste 40 and the pad paste 30 for forming the back electrode is performed.
  • the pad paste 30 for forming the conductive pad is coated on the back passivation layer 130 (see FIG. 2C).
  • the region where the pad paste 30 is applied corresponds to a portion where the finger electrode and the metallic wire 180 cross each other.
  • the finger electrode and the metallic wire 180 may be applied to all intersections or may be selectively applied to only some intersections.
  • a second conductive paste 40 is formed to form a finger electrode (see FIG. 2D).
  • the second conductive paste 40 is applied in a repeated manner spaced apart along the first direction (eg, in the horizontal direction).
  • the pad paste 30 has Ag as a main component
  • the second conductive paste 40 is a metal of a second conductivity type (for example, p-type) in one embodiment, and has Al as a main component.
  • the reason why the second conductive paste 40 is composed of Al as a main component is to form a BSF layer through diffusion of Al into the substrate 110 during the subsequent firing process.
  • the pad paste and the second conductive paste 40 may be applied by screen printing.
  • the substrate 110 is formed. Is fired at a constant temperature.
  • the first conductive paste 10 on the front side of the substrate 110 is converted into a finger electrode, and the pad paste 20 is converted into a conductive pad.
  • the second conductive paste 40 on the back side of the substrate 110 is converted into a finger electrode, and the pad paste 30 is converted into a conductive pad.
  • an Al component of the second conductive paste 40 is diffused into the back of the substrate 110 to form a BSF layer.
  • the metallic wire 180 lamination process means an electrical connection process between the metallic wire 180 and the conductive pad, and a soldering process may be used as an embodiment of the electrical connection process between the metallic wire 180 and the conductive pad.
  • the plurality of metallic wires 180 are repeatedly arranged to be spaced apart from each other in a direction perpendicular to the plurality of finger electrodes.
  • the conductive pad is provided at the intersection of the metallic wire 180 and the finger electrode.
  • the metallic wires 180 and the conductive pads are coupled to fix the metallic wires 180 and electrically connect the metallic wires 180 and the finger electrodes through the conductive pads.
  • the electrical connection process of the metallic wire 180 and the conductive pad is performed on both the front side and the rear side of the substrate 110. As described above, a soldering process may be used as an example of an electrical connection process between the metallic wire 180 and the conductive pad.
  • the light receiving area can be increased by replacing the busbar electrode with a metallic wire.
  • the number of metallic wires can be increased to minimize the reduction of the light receiving area, thereby reducing the electrical resistance.

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne une cellule solaire possédant une jonction sur sa surface arrière et recevant de la lumière à travers ses deux surfaces, et un procédé pour la fabriquer, dans laquelle invention, en ce qui concerne la mise en œuvre d'une cellule solaire possédant une jonction sur sa surface arrière et recevant de la lumière à travers ses deux surfaces, l'électrode de barre omnibus est remplacée par une pluralité de fils métalliques, ce qui permet, d'une part d'augmenter la superficie de réception de lumière, d'autre part de réduire au maximum la résistance électrique. Une cellule solaire possédant une jonction sur sa surface arrière et recevant de la lumière à travers ses deux surfaces selon la présente invention comprend : un substrat ; une couche émettrice disposée sur le côté inférieur de l'intérieur du substrat ; une couche de passivation avant disposée sur la surface avant du substrat ; une couche de passivation arrière disposée sur la surface arrière du substrat ; une électrode avant disposée sur la couche de passivation avant ; et une électrode arrière disposée sur la couche de passivation arrière, l'électrode avant comme l'électrode arrière étant composées d'une pluralité d'électrodes en peigne agencées de manière répétitive tout en étant espacées les unes des autres, une pluralité de fils métalliques agencés de manière répétitive tout en étant espacés les uns des autres dans une direction perpendiculaire à la pluralité d'électrodes en peigne, et des plots conducteurs disposés à des positions correspondant aux points d'intersection entre les électrodes en peigne et le fil métallique pour induire une connexion électrique entre les électrodes en peigne et les fils métalliques.
PCT/KR2017/006520 2016-06-22 2017-06-21 Cellule solaire possédant une jonction sur sa surface arrière et recevant de la lumière à travers ses deux surfaces, et procédé pour la fabriquer WO2017222297A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020160077754A KR20180000070A (ko) 2016-06-22 2016-06-22 후면접합 양면수광형 태양전지 및 그 제조방법
KR10-2016-0077754 2016-06-22

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WO2017222297A1 true WO2017222297A1 (fr) 2017-12-28

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011003721A (ja) * 2009-06-18 2011-01-06 Mitsubishi Electric Corp 太陽電池セルおよびその製造方法
KR20130086960A (ko) * 2010-05-28 2013-08-05 솔라월드 이노베이션즈 게엠베하 태양 전지들을 접촉 및 연결하기 위한 방법과, 상기 방법에 의해 제조된 태양 전지 결합체
JP2015159286A (ja) * 2014-02-24 2015-09-03 エルジー エレクトロニクス インコーポレイティド 太陽電池モジュール及びその製造方法
KR20160016305A (ko) * 2014-08-04 2016-02-15 엘지전자 주식회사 태양 전지 모듈
KR101614190B1 (ko) * 2013-12-24 2016-04-20 엘지전자 주식회사 태양전지 및 이의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011003721A (ja) * 2009-06-18 2011-01-06 Mitsubishi Electric Corp 太陽電池セルおよびその製造方法
KR20130086960A (ko) * 2010-05-28 2013-08-05 솔라월드 이노베이션즈 게엠베하 태양 전지들을 접촉 및 연결하기 위한 방법과, 상기 방법에 의해 제조된 태양 전지 결합체
KR101614190B1 (ko) * 2013-12-24 2016-04-20 엘지전자 주식회사 태양전지 및 이의 제조 방법
JP2015159286A (ja) * 2014-02-24 2015-09-03 エルジー エレクトロニクス インコーポレイティド 太陽電池モジュール及びその製造方法
KR20160016305A (ko) * 2014-08-04 2016-02-15 엘지전자 주식회사 태양 전지 모듈

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