WO2018004179A1 - Module de cellule solaire - Google Patents
Module de cellule solaire Download PDFInfo
- Publication number
- WO2018004179A1 WO2018004179A1 PCT/KR2017/006492 KR2017006492W WO2018004179A1 WO 2018004179 A1 WO2018004179 A1 WO 2018004179A1 KR 2017006492 W KR2017006492 W KR 2017006492W WO 2018004179 A1 WO2018004179 A1 WO 2018004179A1
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- WIPO (PCT)
- Prior art keywords
- solar cell
- electrode
- conductive pads
- conductive pad
- area
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- 239000000758 substrate Substances 0.000 claims description 25
- 230000005684 electric field Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 12
- 238000005452 bending Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- the present invention relates to a solar cell module, and more particularly, to a solar cell module capable of minimizing electrical resistance while increasing the light receiving area by replacing an electrical connection method of a neighboring solar cell with a metallic wire and a conductive pad. will be.
- the solar cell module is composed of a plurality of solar cells (solar cell) is a device for receiving photovoltaic photovoltaic conversion.
- Each solar cell constituting the solar cell module may be referred to as a diode composed of a p-n junction.
- the plurality of solar cells constituting the solar cell module is electrically connected, for example, the front electrode of the first solar cell is connected in the form of being connected to the rear electrode of the second solar cell.
- the front electrode and the back electrode of the neighboring solar cells are connected by a ribbon-shaped interconnector (refer to Korean Patent No. 1138174).
- the front electrode and the rear electrode of the neighboring solar cell 110 when the front electrode and the rear electrode of the neighboring solar cell 110 are connected by the interconnector 120, the front electrode and the rear electrode include the bus bar electrode 111 in detail.
- the interconnector 120 connects the bus bar electrode 111 of the front electrode and the bus bar electrode 111 of the back electrode.
- the busbar electrode transfers carriers collected from the finger electrodes of the front electrode and the back electrode to the interconnector.
- the structure of the solar cell module has been described above in general, but as described above, a bus bar electrode and an interconnector are essentially required for electrical connection of the solar cells. In addition, in order to reduce the electrical resistance, the busbar electrode and the interconnector occupy a small area compared to the solar cell area.
- One of the conditions for increasing the photoelectric conversion efficiency of the solar cell is to increase the light receiving area.
- the busbar electrode and the interconnector occupy a considerable area, there is a problem in that the light receiving area is reduced, and the material required for forming the busbar electrode and the interconnector is also increased, thereby increasing the manufacturing cost. .
- Patent Document 1 Korean Registered Patent No. 1138174
- the present invention has been made to solve the above problems, a solar cell module that can increase the light receiving area and minimize the electrical resistance by replacing the electrical connection method of the neighboring solar cells with metallic wires and conductive pads.
- the purpose is to provide.
- the solar cell includes a front electrode and a rear electrode.
- the front electrode is composed of a front collecting electrode and a plurality of front conductive pads
- the rear electrode is composed of a rear collecting electrode and a plurality of rear conductive pads
- the metallic wire is provided on the front conductive pad of the first solar cell is extended and 2 is provided on the rear conductive pad of the solar cell
- the plurality of front conductive pads are spaced apart, disposed on the front of the solar cell
- the plurality of rear conductive pads are spaced apart, disposed on the rear of the solar cell
- the outermost The area of the front conductive pads or the area of the rear conductive pads is less than the area of the front conductive pads or the rear conductive pads disposed inside. It is characterized by large.
- the number of front conductive pads and the number of rear conductive pads may be the same, or the number of rear conductive pads may be greater than the number of front conductive pads.
- the plurality of front conductive pads and the plurality of rear conductive pads may be spaced apart from each other at equal intervals, and the distance between the front conductive pads or the rear conductive pads is 15 mm or less.
- the front conductive pad or the rear conductive pad disposed on the outermost side is disposed at 2.5mm or more away from the end of the solar cell substrate.
- the number of metallic wires is less than six or more finger electrodes.
- the area of the front conductive pad or the rear conductive pad disposed at the outermost side is 4 to 8 times larger than the area of the front conductive pad or the rear conductive pad disposed at the inner side.
- the solar cell module according to the present invention has the following effects.
- the number of metallic wires can be increased than the number of busbar electrodes, thereby improving the electrical characteristics of the solar cell module, and having a width greater than that of the busbar electrodes.
- the light receiving area can be increased.
- 1a and 1b is a block diagram of a solar cell module according to the prior art.
- FIG. 2 is a perspective view of a solar cell module according to an embodiment of the present invention.
- FIG. 3 is a reference diagram showing the front and rear of the solar cell according to an embodiment of the present invention.
- the present invention proposes a technique for replacing a ribbon-type interconnector in the construction of a solar cell module.
- a ribbon-type interconnector electrically connects the busbar electrodes of each solar cell.
- the present invention replaces the ribbon interconnection method by the combination of the metallic wire and the conductive pad.
- Conductive pads are provided on the front and rear of each solar cell constituting the solar cell module, the conductive pad provided in each solar cell is electrically connected by a metallic wire.
- the conductive pads are provided on the front and rear surfaces of the solar cell, respectively, to transfer carriers collected by the electrodes on the front side and the electrodes on the rear side to the metallic wires.
- busbar electrodes In the case of a ribbon-type interconnector, two to four busbar electrodes are provided on the front and rear surfaces of the solar cell, and the same number of interconnectors as the busbar electrodes are applied. In contrast, in the case of the present invention, a plurality of conductive pads are spaced apart from and disposed on each of the front and rear surfaces of the solar cell substrate, and the metallic wires having a width smaller than the width of the bus bar electrodes are electrically connected to the plurality of conductive pads.
- the width of the metallic wire is smaller than the width of the busbar electrodes, the number of metallic wires can be increased more than the number of busbar electrodes of the conventional interconnector method, and the number of busbar electrodes can be increased at the level of minimizing the reduction of light receiving area. As the metallic wires are disposed, the electrical connection between the solar cells can be improved.
- the present invention proposes a technique for improving the adhesion characteristics between the metallic wire and the conductive pad and the bowing characteristics of the solar cell in the process of attaching the metallic wire and the conductive pad, that is, tabbing.
- the heat transfer efficiency of the rear side is relatively lower than that of the front side of the solar cell, and the number of conductive pads disposed on the rear side is the same as the front side, or the number of conductive pads on the front side is designed to be larger.
- the adhesion property between the metallic wire and the conductive pad and the bending property of the solar cell can be improved. If the number of conductive pads on the front and back is different from each other, bending may occur.
- the outermost conductive pad is disposed at a distance of 2.5 mm or more from the end of the solar cell substrate to reduce the possibility of cracking of the substrate.
- a solar cell module according to an embodiment of the present invention includes a plurality of solar cells 200, and the plurality of solar cells 200 are electrically connected by metallic wires 10. do.
- Each solar cell 200 has a front electrode and a back electrode.
- the front electrode is provided on the front side of the solar cell 200
- the rear electrode is provided on the rear side of the solar cell 200.
- Each of the front electrode and the back electrode is composed of a collecting electrode and a conductive pad. That is, the front electrode includes the front collection electrode 211 and the front conductive pad 212, and the rear electrode includes the rear collection electrode 221 and the rear conductive pad 222.
- the collecting electrode serves to collect a carrier generated by photoelectric conversion, and the conductive pad serves to transfer the carrier collected by the collecting electrode to the metallic wire 10.
- the collecting electrodes may be configured to be spaced apart and arranged in parallel or may have a plate shape.
- the collecting electrode when the front electrode of the front-side photovoltaic solar cell or the front electrode and the rear electrode of the double-sided photovoltaic solar cell is configured, the collecting electrode is configured as a finger-line electrode spaced apart and arranged in parallel.
- the collecting electrode In the case of forming the back electrode of the front-receiving solar cell, the collecting electrode may be configured in the form of a plate like an Al electrode (hereinafter referred to as a BSF electrode) that induces the formation of a back surface field. .
- a BSF electrode Al electrode
- the conductive pads are repeatedly arranged at regular intervals on the front and rear surfaces of the solar cells regardless of the structure of the solar cells.
- the plurality of conductive pads are spaced apart at equal intervals in the horizontal and vertical directions.
- the conductive pad may be provided at all intersection points of the finger electrode and the metallic wire 10 or may be selectively provided at some intersection points of all the intersection points.
- the collecting electrode has a plate shape like the BSF electrode
- the plurality of conductive pads are equally spaced apart in the horizontal direction and the vertical direction, and the BSF electrode is provided in an area where the conductive pad is not provided, and the plurality of metallic wires ( 10) forms a structure provided on the conductive pad.
- the distance between the conductive pads is not limited, but within 15 mm in consideration of the adhesion characteristics of the metallic wire 10 and the conductive pad, the reduction of the light receiving area, the amount of the conductive material (eg, Ag) used to form the conductive pad, and the electrical characteristics. It is desirable to design.
- the finger electrode and the conductive pad may be composed of Ag as a main component, and the metallic wire 10 may be formed of copper (Cu) and tin (Sn) based metal compounds.
- the area of the outermost conductive pad (hereinafter, referred to as the outermost conductive pad) is designed to be larger than the area of the conductive pad disposed inside. do.
- the outermost conductive pad may have an area of 4 to 8 times the area of the inner conductive pad. Only four to eight times the length can be designed.
- the outermost conductive pad may be disposed at a distance of 2.5 mm or more from the end of the solar cell substrate 201.
- one end of the busbar electrode is disposed 6 mm or more away from the end of the substrate.
- the outermost conductive pad is attached to the end of the substrate because of the flexible bending property of the metallic wire. It can be provided in a near position. In consideration of this point, the outermost conductive pad is preferably placed 2.5 to 6 mm away from the substrate end.
- the number of front conductive pads 212 and the number of rear conductive pads 222 are preferably the same.
- the reason for designing the same number of front conductive pads 212 and rear conductive pads 222 is to prevent bending of the solar cell substrate.
- the warpage phenomenon of the solar cell substrate may occur due to the difference in the coating amount of the conductive material forming the front and rear conductive pads.
- 4 illustrates the amount of warpage of the solar cell substrate according to the difference in the number of front conductive pads and the rear conductive pads. As shown in FIG. 4, the amount of warpage of the substrate increases as the difference in the number of front conductive pads and the rear conductive pads increases. It can be seen.
- the metallic wire 10 connects the front electrode and the rear electrode of the neighboring solar cell 200.
- the metallic wire 10 may be formed of the front electrode of the first solar cell 200 and the second solar cell 200.
- the rear electrode is connected (or the rear electrode of the first solar cell 200 and the front electrode of the second solar cell 200 are connected by the metallic wire 10).
- the metallic wire 10 disposed on the front conductive pad 212 of the first solar cell 200 extends to form a shape on the rear conductive pad 222 of the second solar cell 200.
- the number of metallic wires 10 connecting the front electrode of the first solar cell 200 and the rear electrode of the second solar cell 200 is not limited, but it is 6 or more and the number of finger electrodes is less than the number. desirable.
- front collecting electrode 212 front conductive pad
- the number of metallic wires can be increased than the number of busbar electrodes, thereby improving the electrical characteristics of the solar cell module, and having a width greater than that of the busbar electrodes.
- the light receiving area can be increased.
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
La présente invention concerne un module de cellule solaire capable de remplacer un procédé de connexion électrique de cellules solaires voisines en utilisant un fil métallique et un plot conducteur de manière à augmenter une zone de réception de lumière et à minimiser la résistance électrique et, selon la présente invention, le module de cellules solaires comprend : une pluralité de cellules solaires comprenant une première cellule solaire et une seconde cellule solaire, et disposées de manière à se trouver voisines l'une à l'autre; et une pluralité de fils métalliques pour connecter électriquement une électrode avant de la première cellule solaire et une électrode arrière de la seconde cellule solaire, les cellules solaires comprenant une électrode avant et une électrode arrière; l'électrode avant ayant une électrode de collecte avant et une pluralité de plots conducteur avant, et l'électrode arrière comporte une électrode de collecte arrière et une pluralité de plots conducteurs arrière; les fils métalliques sont disposés sur un plot conducteur avant de la première cellule solaire et s'étendent à partir de celui-ci de manière à être disposés sur un plot conducteur arrière de la seconde cellule solaire; la pluralité de plots conducteurs avant sont espacés et disposés sur la surface avant des cellules solaires, et la pluralité de plots conducteurs arrière sont espacés et disposés sur la surface arrière des cellules solaires; et une zone de la partie la plus externe du plot conducteur avant ou une zone de la partie la plus externe du plot conducteur arrière est plus grande qu'une zone d'un coté interne du plot conducteur avant ou d'une zone d'un coté interne du plot conducteur arrière.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020160080050A KR20180001203A (ko) | 2016-06-27 | 2016-06-27 | 태양전지 모듈 |
KR10-2016-0080050 | 2016-06-27 |
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WO2018004179A1 true WO2018004179A1 (fr) | 2018-01-04 |
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PCT/KR2017/006492 WO2018004179A1 (fr) | 2016-06-27 | 2017-06-21 | Module de cellule solaire |
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KR (1) | KR20180001203A (fr) |
WO (1) | WO2018004179A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US11939646B2 (en) | 2018-10-26 | 2024-03-26 | Oerlikon Metco (Us) Inc. | Corrosion and wear resistant nickel based alloys |
US12076788B2 (en) | 2019-05-03 | 2024-09-03 | Oerlikon Metco (Us) Inc. | Powder feedstock for wear resistant bulk welding configured to optimize manufacturability |
Families Citing this family (1)
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KR102576589B1 (ko) * | 2018-09-05 | 2023-09-08 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 및 이를 포함하는 태양 전지 패널 |
Citations (5)
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KR20130086960A (ko) * | 2010-05-28 | 2013-08-05 | 솔라월드 이노베이션즈 게엠베하 | 태양 전지들을 접촉 및 연결하기 위한 방법과, 상기 방법에 의해 제조된 태양 전지 결합체 |
US20130263908A1 (en) * | 2012-04-06 | 2013-10-10 | Sunovel Suzhou Technologies Ltd. | Solar Cell Structure and Method for Manufacturing the Same |
JP2015159286A (ja) * | 2014-02-24 | 2015-09-03 | エルジー エレクトロニクス インコーポレイティド | 太陽電池モジュール及びその製造方法 |
KR20160016305A (ko) * | 2014-08-04 | 2016-02-15 | 엘지전자 주식회사 | 태양 전지 모듈 |
KR101630130B1 (ko) * | 2015-08-20 | 2016-06-13 | 엘지전자 주식회사 | 태양 전지 및 태양 전지 모듈 |
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2016
- 2016-06-27 KR KR1020160080050A patent/KR20180001203A/ko unknown
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2017
- 2017-06-21 WO PCT/KR2017/006492 patent/WO2018004179A1/fr active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20130086960A (ko) * | 2010-05-28 | 2013-08-05 | 솔라월드 이노베이션즈 게엠베하 | 태양 전지들을 접촉 및 연결하기 위한 방법과, 상기 방법에 의해 제조된 태양 전지 결합체 |
US20130263908A1 (en) * | 2012-04-06 | 2013-10-10 | Sunovel Suzhou Technologies Ltd. | Solar Cell Structure and Method for Manufacturing the Same |
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KR20160016305A (ko) * | 2014-08-04 | 2016-02-15 | 엘지전자 주식회사 | 태양 전지 모듈 |
KR101630130B1 (ko) * | 2015-08-20 | 2016-06-13 | 엘지전자 주식회사 | 태양 전지 및 태양 전지 모듈 |
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US11939646B2 (en) | 2018-10-26 | 2024-03-26 | Oerlikon Metco (Us) Inc. | Corrosion and wear resistant nickel based alloys |
US12076788B2 (en) | 2019-05-03 | 2024-09-03 | Oerlikon Metco (Us) Inc. | Powder feedstock for wear resistant bulk welding configured to optimize manufacturability |
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