Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
  • H01L27/144—Devices controlled by radiation
  • H01L27/146—Imager structures
  • H01L27/14601—Structural or functional details thereof
  • H01L27/14634—Assemblies, i.e. Hybrid structures
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/20—Filters
  • G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
  • H01L27/144—Devices controlled by radiation
  • H01L27/146—Imager structures
  • H01L27/14601—Structural or functional details thereof
  • H01L27/1462—Coatings
  • H01L27/14621—Colour filter arrangements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
  • H01L27/144—Devices controlled by radiation
  • H01L27/146—Imager structures
  • H01L27/14601—Structural or functional details thereof
  • H01L27/14625—Optical elements or arrangements associated with the device
  • H01L27/14627—Microlenses
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
  • H01L27/144—Devices controlled by radiation
  • H01L27/146—Imager structures
  • H01L27/14643—Photodiode arrays; MOS imagers
  • H01L27/14649—Infrared imagers
  • H01L27/1465—Infrared imagers of the hybrid type
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
  • H01L27/144—Devices controlled by radiation
  • H01L27/146—Imager structures
  • H01L27/14643—Photodiode arrays; MOS imagers
  • H01L27/14649—Infrared imagers
  • H01L27/14652—Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
  • H01L27/144—Devices controlled by radiation
  • H01L27/146—Imager structures
  • H01L27/14665—Imagers using a photoconductor layer
  • H01L27/14669—Infrared imagers
  • H01L27/1467—Infrared imagers of the hybrid type
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
  • H01L27/144—Devices controlled by radiation
  • H01L27/146—Imager structures
  • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
  • H01L27/1469—Assemblies, i.e. hybrid integration

Definitions

• SoC system on chip
• US 7,875,947 B2 discloses color filters formed of alternately stacked inorganic materials of different refractive indices like Si02, SiON, SiN or Si.
• US 8,284,291 B2 discloses an optical lens assembly comprising a lens with a concave surface on the side of the image, the surface having at least one inflection point.
• US 8,964,062 Bl discloses a camera of a computing device with an integrated ambient light sensor in the camera module.
• a microprocessor analyzes data obtained from the sensor.
• US 9,232,150 B2 discloses a system for calculating an ambient light estimate using an image sensor and a matrix of grid elements each comprised of multiple adjacent pixels.
• US 2014/0022650 Al discloses an optical unit comprising two lenses arranged between two substrates for use in image processing units like cameras.
• US 2016/0006913 Al discloses an optical apparatus comprising a semiconductor substrate with an image sensor and an ambient light sensor and/or proximity sensor, and an optics substrate with a lens element. It is an object of the present invention to disclose a system-on-chip camera with integrated light sensor (s) and a method of producing a system-on-chip camera with integrated light sensor ( s ) .
• the system-on-chip camera comprises a sensor substrate comprising semiconductor material, sensor elements arranged in the sensor substrate according to an array of pixels, a light sensor in the sensor substrate apart from the sensor elements, and a surface of incidence above the sensor
• the sensor substrate is connected to a semiconductor body comprising an integrated circuit and is arranged between the semiconductor body and the surface of incidence.
• Each of the sensor elements is provided with a further component arranged between the sensor element and the surface of incidence, the further component being a filter element or a stack of further sensor elements.
• a front dielectric layer is arranged between the sensor substrate and the surface of incidence, and each of the further components is a filter element arranged in the front dielectric layer.
• Each of the filter elements may especially be a band-pass filter for either red, green or blue light.
• metal spacers are laterally arranged at the filter elements or further sensor elements.
• a further band-pass filter for either red, green or blue light is arranged as a filter layer between the light sensor and the surface of incidence.
• each of the further components is a stack of further sensor elements, the sensor element and the further sensor elements being arranged at different distances from the surface of incidence.
• a lens or an array of lenses is formed by an oxide of semiconductor material arranged on the surface of incidence.
• a molding material covers the lens or array of lenses, and a diffusor is formed above the light sensor by a modified region of the molding material.
• a further embodiment comprises a metallization layer between the semiconductor body and the sensor substrate, a contact pad, a via hole in the semiconductor body, and a
• the semiconductor body is between the metallization layer and the contact pad.
• the metallization in the via hole electrically connects the metallization layer and the contact pad.
• a further embodiment comprises a metallization layer between the semiconductor body and the sensor substrate, an optical component above the surface of incidence and a through- substrate interconnection electrically connecting the
• a further embodiment comprises an optical via penetrating the semiconductor body and an optical component opposite the optical via on a side facing away from the sensor substrate.
• the light sensor is a sensor selected from the group consisting of ambient light sensor, colour sensor, hyperspectral sensor with multiple pixels or bands, infrared sensor and UV sensor.
• a further embodiment comprises a proximity sensor, a gesture sensor or a time-of-flight sensor including a light source.
• the light sensor comprises an array of light sensors serving as a further camera.
• the method of producing a system-on-chip camera comprises providing a semiconductor body with an integrated circuit, providing a sensor substrate with sensor elements, which are arranged according to an array of pixels, and with a light sensor apart from the sensor elements, fastening the sensor substrate to the semiconductor body, and forming at least one plurality of filter elements.
• Each plurality of filter elements is formed by arranging a filter layer on a planar surface above the sensor substrate, applying a mask on the filter layer, the mask covering areas provided for the filter elements, structuring the filter layer using the mask, and planarizing the surface.
• three pluralities of filter elements may be provided for the system-on-chip camera by arranging a first filter layer on the sensor substrate, applying a first mask on the first filter layer, the first mask covering areas provided for filter elements of a first type, structuring, especially etching, the first filter layer using the first mask, planarizing the surface, arranging a second filter layer on the planarized surface, applying a second mask on the second filter layer, the second mask covering areas provided for filter elements of a second type, structuring, especially etching, the second filter layer using the second mask, planarizing the surface, arranging a third filter layer on the planarized surface, applying a third mask on the third filter layer, the third mask covering areas provided for filter elements of a third type, structuring, especially etching, the third filter layer using the third mask, and planarizing the surface.
• a UV IR blocking filter layer is arranged on the planarized surface after the last filter layer is etched.
• a further mask is applied on the UV IR blocking filter layer, the UV IR blocking filter layer is etched using the further mask, and the surface is planarized.
• a lens layer is arranged above the sensor substrate, and a transfer mask having the shape of a lens or an array of lenses, is applied on the lens layer.
• a lens or an array of lenses is formed by transferring the shape of the transfer mask to the lens layer.
• the method of producing a system-on-chip camera comprises providing a semiconductor body with an integrated circuit, providing a sensor substrate with sensor elements, which are arranged according to an array of pixels, and with a light sensor apart from the sensor elements, fastening the sensor substrate to the semiconductor body, and arranging a lens or an array of lenses above the sensor substrate.
• the lens or array of lenses may be formed by arranging a lens layer above the sensor substrate, applying a transfer mask on the lens layer, the transfer mask having a shape of a lens or an array of lenses, and forming a lens or an array of lenses by transferring the shape of the transfer mask to the lens layer.
• a molding material is applied to cover the lens or array of lenses, and a diffusor is formed above the light sensor by modifying the molding material in a region above the light sensor.
• metal spacers are formed at the filter elements by etching trenches in the planarized surface and filling the trenches with a metal.
• Figure 1 is a cross section of a system-on-chip camera with filters, light sensor, vias and molding material.
• Figure 2 is a cross section according to Figure 1 for a
• Figure 3 is a cross section of a system-on-chip camera with filters, light sensor, optical via and molding material .
• Figure 4 is a cross section of a system-on-chip camera with sensor stacks, light sensor, vias and molding material .
• Figure 5 is a cross section of a system-on-chip camera sensor stacks, light sensor, optical via and molding material.
• Figure 6 is a cross section of a further system-on-chip
• Figure 7 is a cross section of a system-on-chip camera with filters, light sensor and vias.
• Figure 8 is a cross section of a further system-on-chip
• Figure 9 is a cross section according to Figure 8 for a
• Figure 10 is a cross section of a system-on-chip camera
• Figure 11 is a cross section according to Figure 10 for a system-on-chip camera with a different filter.
• Figure 12 is a top view of an arrangement of sensors.
• Figure 13 is a cross section of an intermediate product after a first filter layer is applied.
• Figure 14 is a cross section according to Figure 13 after the first filter layer is structured and the surface is planarized.
• Figure 15 is a cross section according to Figure 14 after a mask is applied on the planarized surface.
• Figure 16 is a cross section according to Figure 15 after trenches are etched in the planarized surface.
• Figure 17 is a cross section according to Figure 16 after the trenches are filled.
• Figure 18 is a cross section according to Figure 17 after a second filter layer is applied.
• Figure 19 is a cross section according to Figure 18 after the second filter layer is structured and the surface is planarized.
• Figure 20 is a cross section according to Figure 19 after a third filter layer is applied.
• Figure 21 is a cross section according to Figure 20 after the third filter layer is structured and the surface is planarized.
• Figure 22 is a cross section according to Figure 21 after a blocking filter layer is applied.
• Figure 23 is a cross section according to Figure 22 after a further mask is applied.
• Figure 24 is a cross section according to Figure 23 after a lens layer and a transfer mask are applied.
• Figure 25 is a cross section according to Figure 24 after lenses are formed.
• Figure 26 is a cross section according to Figure 25 after via holes are formed in the semiconductor body.
• Figure 27 is a cross section according to Figure 26 after
• Figure 1 is a cross section of a system-on-chip camera with an integrated light sensor.
• a semiconductor body 1 is
• sensor substrate 2 comprising semiconductor material, which may be of the same kind as the semiconductor material of the semiconductor body 1, in particular silicon, for instance.
• Sensor elements 3 are arranged in the sensor substrate 2 according to an array of pixels, and at least one light sensor 4 is arranged in the sensor substrate 2 apart from the sensor elements 3.
• Figure 1 shows one light sensor 4 by way of example, but two or more light sensors 4 may be integrated.
• the sensor elements 3 may be separated from one another and from the sensor substrate 2 by deep trench isolations 16, for instance.
• the light sensor 4 may be separated from the sensor substrate 2 by deep trench
• a front dielectric layer 5 may be present on the front side of the sensor substrate 2 facing away from the semiconductor body 1.
• An intermediate dielectric layer 6 may be arranged between the semiconductor body 1 and the sensor substrate 2.
• the intermediate dielectric layer 6 may comprise a layer portion that is applied to the semiconductor body 1 and a further layer portion that is applied to the sensor substrate 2 before the sensor substrate 2 is fastened to the semiconductor body 1.
• the boundary between these layer portions is indicated in Figure 1 by a horizontal broken line.
• the layer portions may serve to fasten the sensor substrate 2 to the semiconductor body 1 by bonding.
• a rear dielectric layer 7 may be present on the side of the
• the intermediate dielectric layer 6 may include a wiring comprising structured metallization layers 8 and vertical interconnections 9.
• the wiring may especially be connected to the array of sensor elements 3, the light sensor 4 and/or components of an integrated circuit 40 in the semiconductor body 1. Details of the integrated circuit 40 are not
• the integrated circuit 40 is therefore only schematically indicated in Figure 1 by doped wells.
• the integrated circuit 40 may in particular be a CMOS circuit, for instance.
• filter elements 11, 12, 13 are arranged above the sensor elements 3. It may be suitable to arrange filter elements of the same type of filter on the same level above the sensor elements 3.
• a filter layer 10 may be arranged above the light sensor 4.
• the filter layer 10 may be a band-pass filter for either red, green or blue light.
• Filter elements of a first type 11 may be arranged in a first layer portion of the front dielectric layer 5
• filter elements of a second type 12 may be arranged in a second layer portion of the front dielectric layer 5
• filter elements of a third type 13 may be arranged in a third layer portion of the front dielectric layer 5.
• the filter elements of the first type 11 may be band-pass filters for red
• the filter elements of the second type 12 may be band-pass filters for green
• the filter elements of the third type 13 may be band-pass filters for blue, for example.
• the order of the levels on which filter elements of the same type, especially red, green or blue filters, are arranged is arbitrary.
• the optional filter layer 10 may be on the same level with the filter elements of any of the types 11, 12, 13.
• the band-pass filters may be formed by interference filters, for instance.
• the number of levels on which filter elements are arranged may differ from the system-on-chip camera shown in Figure 1 and may especially be larger. Further types of filters may be arranged in the system-on-chip camera, in particular filters that are provided to protect the integrated circuit from radiation .
• a UV IR blocking filter 14 is optionally arranged above the filter elements 11, 12, 13.
• the UV IR blocking filter 14, which prevents ultraviolet and infrared radiation from reaching the sensor elements 3, may be an interference filter comprising a sequence of layers, which are schematically indicated in Figure 1.
• the UV IR blocking filter 14 may form an entire layer, or it may be recessed above the light sensor 4, as shown in Figure 1 by way of example.
• Another type of filter may be employed instead of the UV IR blocking filter 14, in particular a filter that blocks either ultraviolet radiation or infrared radiation, according to the intended application .
• the light sensor 4 can be an ambient light sensor, a colour sensor with three pixels or bands (RGB or XYZ) , for instance, a hyperspectral sensor (on-chip spectrometer) with multiple pixels or bands (e. g. more than 3 and up to 256), an IR sensor above which the UV IR blocking layer 14 is opened or an UV sensor above which the UV IR blocking layer 14 is opened.
• the invention includes any system-on-chip combining a camera with such sensors.
• the system-on-chip camera may comprise a proximity sensor, a gesture sensor or a time-of-flight sensor including a light source, especially for emitting and detecting IR radiation, and optical barriers.
• the light sensor 4 may have multiple pixels forming an array serving as a further camera.
• a surface of incidence 30 is provided on a side of the sensor substrate 2 facing away from the semiconductor body 1, where radiation is allowed to enter the system-on-chip camera in the direction indicated in Figure 1 by the arrows pointing downwards.
• a lens 15 or an array of lenses 15 is applied on the surface of incidence 30 above the array of sensor
• lens elements 3 and may especially be formed in a layer of transparent or semitransparent material, which may be an oxide of the semiconductor material of the sensor substrate 2, in particular Si02, for instance.
• the lens 15 or array of lenses 15 may also be arranged above the light sensor 4 as shown in Figure 1 by way of example.
• Contact pads 17 or a redistribution layer may be arranged on the rear side of the semiconductor body 1, facing away from the sensor substrate 2. Solder balls 18 may be arranged on at least some of the contact pads 17 for external electric connection. A passivation 46, which does not completely cover the contact pads 17, may also be applied on the rear side. A via hole 19 or a plurality of via holes 19 may be present in the semiconductor body 1. An electric interconnection between a contact pad 17 and a metallization layer 8 embedded in the intermediate dielectric layer 6 can be formed by a metallization 21, which is arranged in one of the via holes 19. A dielectric interlayer 20 optionally insulates the semiconductor body 1 from the metallization 21 to prevent a short circuit through the semiconductor body 1.
• Figure 1 shows optional metal spacers 22, which can be arranged at lateral surfaces of the filter layer 10 and the filter elements 11, 12, 13 to form apertures limiting the solid angle of incidence.
• the metal spacers 22 may comprise TiN or W, for instance, and may be formed by chemical vapour deposition and subsequent etching, for instance.
• Figure 1 also shows an arrangement of a further optical component 24.
• the optical component 24 is a vertical-cavity surface-emitting laser (VCSEL) , but other optical components may be provided in similar fashion.
• VCSEL vertical-cavity surface-emitting laser
• Further contact pads 25 and through-substrate vias 29 may serve as electric connections between terminals of the optical component 24 and metallization layers 8 of the wiring.
• the direction of light emission from the optical component 24 is indicated in Figure 1 by arrows pointing upwards .
• the lens 15 or array of lenses 15 may be covered by a molding material 36, which is sufficiently transparent or at least semitransparent for radiation within a desired range of wavelengths.
• An optical isolation 37 which is essentially opaque for the relevant range of wavelengths, in particular for radiation emitted by the optical component 24, may be formed in the molding material 36 to provide an aperture.
• a diffusor 38 can also be formed in the molding material 36, in particular above the light sensor 4, by a regional cost
• Such a diffusor 38 helps to eliminate shifts in the characteristics of the filter layer 10 that are due to a dependency of the filter characteristics on the angle of incidence of the radiation.
• Figure 2 is a cross section according to Figure 1 for a further system-on-chip camera with an integrated light sensor.
• the UV IR blocking filter 14 is recessed above the light sensor 4, and a further filter 48 is arranged above the light sensor 4.
• the further filter 48 may especially be an IR pass filter, which allows infrared radiation to reach the light sensor 4, and/or a UV blocking filter, which prevents ultraviolet radiation from reaching the light sensor 4.
• the UV IR blocking filter 14 and the further filter 48 may be arranged on the same level, or one of these filters 14, 48 may be on a higher level than the other one.
• Figure 3 is a cross section of a further system-on-chip camera with an integrated light sensor. Elements of the embodiment according to Figure 3 that are similar to
• the optical component 24 is arranged on the rear side of the semiconductor body 1.
• An optical via 39 which may comprise a sidewall insulation 47, is provided in the semiconductor body 1 opposite the optical component 24.
• the sensor substrate 2 is recessed above the optical component 24. If the optional UV IR blocking filter 14 is present, it is also recessed above the optical
• Figure 3 further shows an optical confinement 23 for the light sensor 4.
• the optical confinement 23 may be a layer surrounding the region that is located above the light sensor 4 and may especially be a metal layer, in particular TiN or W, for instance.
• the optical confinement 23 may be formed by etching a trench in the front dielectric layer 5 and
• Such an optical confinement 23 may also be provided in the embodiment
• Figure 3 shows the filter layer 10 arranged on the level of the filter elements 13, by way of example. This level is higher than the level of the filter layer 10 in the arrangements shown in Figures 1 and 2. Instead, the filter layer 10 can be arranged on one of the lower levels of the filter elements 11 or 12.
• a UV IR ultraviolet IR
• blocking filter 14 and/or a further filter 48 may be arranged above the light sensor 4 as in the embodiments according to Figures 1 or 2.
• Figure 4 is a cross section of a further system-on-chip camera with an integrated light sensor. Elements of the embodiment according to Figure 4 that are similar to
• further sensor elements 3 ' are arranged above the sensor elements 3 instead of filter elements.
• the distances of the sensor elements 3 and further sensor elements 3 ' from the surface of incidence 30 vary in each of the stacks. As the depth of penetration of light into silicon depends on the wavelength, the spectral sensitivities of the sensor element 3 and the further sensor elements 3' of the same stack are all different from one another. A separate detection of red, green and blue light by individual sensor elements is thus feasible without using filters.
• the further sensor elements 3' may be provided with metal spacers 22 similar to the metal spacers 22 of the filter elements 11, 12, 13 in the
• Figure 5 is a cross section of a further system-on-chip camera with an integrated light sensor. Elements of the embodiment according to Figure 5 that are similar to
• the embodiment according to Figure 5 differs from the embodiment according to Figure 3 in that, instead of filter elements, further sensor elements 3' are arranged above the sensor elements 3 as in the embodiment according to Figure 4.
• filters may be provided in the system-on-chip camera according to Figure 5, in particular filters protecting the integrated circuit from radiation.
• Figure 6 is a cross section of a further system-on-chip camera with an integrated light sensor. Elements of the embodiment according to Figure 6 that are similar to
• the UV IR blocking filter 14 extends over the light sensor 4.
• the UV IR blocking filter 14 may instead be recessed as in the embodiments according to Figures 1 to 5.
• a further filter 48 may be arranged above the light filter 4 as in the embodiment according to Figure 2.
• Figure 7 is a cross section of a further system-on-chip camera with an integrated light sensor. Elements of the embodiment according to Figure 7 that are similar to
• the embodiment according to Figure 7 is not provided with a molding material. If the lens 15 or array of lenses 15 is formed in a lens layer 35, portions of the lens layer 35 may also remain in areas that are not occupied by the lens 15 or array of lenses 15, as shown in Figure 7. In a further embodiment the lens 15 or array of lenses 15 may only be arranged above the array of sensor elements 3, but not above the light sensor 4, while the other features are the same as in the embodiment according to Figure 7. In the embodiment according to Figure 7 a further filter 48 is arranged above the light sensor 4, as in the embodiments according to
• Figure 8 is a cross section of a further system-on-chip camera with an integrated light sensor. Elements of the embodiment according to Figure 8 that are similar to
• Figure 7 are designated with the same reference numerals.
• the embodiment according to Figure 8 is not provided with an optical confinement 23.
• the lens 15 or array of lenses 15 is arranged above the array of sensor elements 3, but not above the light sensor 4.
• Figure 9 is a cross section of a further system-on-chip camera with an integrated light sensor. Elements of the embodiment according to Figure 9 that are similar to
• the UV IR blocking filter 14 is recessed above the light sensor 4, and a further filter 48 is arranged above the light sensor 4.
• the further filter 48 may especially be an IR pass filter, which allows infrared radiation to reach the light sensor 4, and/or a UV blocking filter, which prevents ultraviolet radiation from reaching the light sensor 4.
• Figure 10 is a cross section of a further system-on-chip camera with an integrated light sensor. Elements of the embodiment according to Figure 10 that are similar to
• the embodiment according to Figure 10 comprises an optical confinement 23 as described above in conjunction with the embodiment according to Figure 3.
• Figure 11 is a cross section of a further system-on-chip camera with an integrated light sensor. Elements of the embodiment according to Figure 11 that are similar to
• the embodiment according to Figure 11 does not comprise a filter above the light sensor 4.
• the optional UV IR blocking filter is recessed above the light sensor 4.
• Further embodiments can be derived from the variety of embodiments according to Figures 1 to 11.
• the array of sensor elements 3 may be provided with filter elements 11, 12, 13 or further sensor elements 3'.
• the molding material 36 with or without optical isolation 37 or diffusor 38, the filter layer 10, the UV IR blocking filter 14, the further filter 48, the metal spacers 22, the optical confinement 23, the optical component 24, the vias 19, 29, 39 and the lens 15 or array of lenses 15, in particular the lens 15 or array of lenses 15 above the light sensor 4, are optional and may be combined in various ways to obtain further embodiments.
• Figure 12 is a top view of an arrangement of sensors.
• the array of sensor elements 3 may especially be provided with filter elements 11, 12, 13 according to the pattern shown in Figure 12.
• the limits between pixels are indicated with the broken vertical and horizontal lines.
• the different types of hatching correspond to filter elements for red, green and blue, vertical parallel lines indicating green filters.
• Some positions of vias 19 are schematically indicated by way of example.
• the vias 19 may be arranged all around and below the sensor elements and the light sensor (s) 4, as schematically indicated in Figure 12 by triple dots.
• the vias 19 are favourable for providing stability by bumping.
• the light sensor 4 may be a colour sensor 26, for instance.
• Figure 12 shows colour sensors 26 for red, green and blue.
• a light source 27 and/or a photosensor 28 may additionally be
• time-of-flight sensor for instance.
• Figure 13 shows a cross section of an arrangement of the semiconductor body 1 and the sensor substrate 2 including sensor elements 3 and a light sensor 4.
• the semiconductor body 1 and the sensor substrate 2 are fastened to one
• a first mask 41 is applied on the first filter layer 31 and covers the areas where filter elements of the first type 11 are to be formed.
• the filter elements of the first type 11 may be red filters, for instance, especially interference filters forming band-pass filters for red.
• Figure 14 is a cross section according to Figure 13 after filter elements of the first type 11 are formed.
• the first filter layer 31 shown in Figure 13 is structured, especially etched, using the first mask 41 to form the filter elements of the first type 11.
• the surface is planarized with a suitable material, which may be the material that is provided for the front dielectric layer 5, in particular an oxide of the semiconductor material of the sensor substrate 2 like Si02, for instance.
• Figure 15 is a cross section according to Figure 14 after a first further mask 49 is applied on the planarized surface.
• the first further mask 49 may be a photoresist layer, for instance. It has openings 50 in areas adjacent to the filter elements of the first type 11.
• Figure 16 is a cross section according to Figure 15 after trenches 51 are etched in the planarized surface.
• trenches 51 are etched through the openings 50 of the first further mask 49 into the front dielectric layer 5.
• the trenches 51 can be formed by dry etching, for example.
• the first further mask 49 is subsequently removed.
• Figure 17 is a cross section according to Figure 16 after the trenches 51 are filled with an optically shielding material, which may especially be a metal like tungsten or TiN, for instance.
• the trenches 51 can be filled by deposition, in particular chemical vapour deposition.
• a planar surface is obtained by subsequent chemical mechanical polishing or isotropic backetch, for example.
• the spacers 22 are formed to provide apertures limiting the solid angle of incidence .
• the spacers 22 can instead be formed as sidewall spacers before the front dielectric layer 5 is applied. Spacers can be formed by a conformal deposition of the material that is provided for the spacers 22 and subsequent anisotropic etching .
• Figure 18 is a cross section according to Figure 17 after a second filter layer 32 is arranged on the planarized surface.
• the second filter layer 32 yields filter elements of a second type 12.
• a second mask 42 is applied on the second filter layer 32 and covers the areas where filter elements of the second type 12 are to be formed.
• the filter elements of the second type 12 may be green filters, for instance, especially interference filters forming band-pass filters for green.
• the second mask 42 comprises a further portion above the light sensor 4.
• a suitable filter layer which is a green filter in this example, can be formed above the light sensor 4 together with filter elements that are provided for the array of sensor elements 3.
• Figure 19 is a cross section according to Figure 18 after filter elements of the second type 12 are formed.
• the second filter layer 32 shown in Figure 18 is structured, especially etched, using the second mask 42 to form the filter elements of the second type 12. Then the surface is planarized with a suitable material, which may again be the material that is provided for the front dielectric layer 5, in particular S1O 2 , for instance. Further metal spacers 22 can be applied to the filter elements of the second type 12 according to the above description.
• Figure 20 is a cross section according to Figure 19 after the spacers 22 are formed in the layer of the filter elements of the second type 12 and a third filter layer 33 is arranged on the planarized surface.
• the third filter layer 33 yields filter elements of a third type 13.
• a third mask 43 is applied on the third filter layer 33 and covers areas where filter elements of the third type 13 are to be formed.
• the filter elements of the third type 13 may be blue filters, for instance, especially interference filters forming band-pass filters for blue.
• Figure 21 is a cross section according to Figure 20 after filter elements of the third type 13 are formed and the surface is planarized.
• the third filter layer 33 shown in Figure 20 is structured, especially etched, using the third mask 43 to form the filter elements of the third type 13.
• the surface is planarized with a suitable material, which may again be the material that is provided for the front dielectric layer 5, in particular S1O 2 , for instance. Further metal spacers 22 can be applied to the filter
• Figure 22 is a cross section according to Figure 21 and further shows a UV IR blocking filter layer 34, which may be arranged on the planarized surface if a UV IR blocking filter 14 is desired.
• the UV IR blocking filter layer 34 may be arranged on the planarized surface if a UV IR blocking filter 14 is desired.
• the UV IR blocking filter layer 34 may be
• Figure 23 is a cross section according to Figure 22 after an optional fourth mask 44 is applied.
• the fourth mask 44 is used to structure the UV IR blocking filter layer 34, so that the UV IR blocking filter 14 is produced, which may be accomplished by etching.
• Recesses thus formed in the UV IR blocking filter layer 34 are filled with suitable material, which may again be the material that is provided for the front dielectric layer 5, in particular Si0 2 , for instance.
• Figure 24 is a cross section according to Figure 23 after an optional lens layer 35 is arranged on the planarized surface.
• the lens layer 35 may especially be an oxide of the
• a transfer mask 45 is applied, which has the shape of the lens 15 or array of lenses 15 that is to be formed.
• the transfer mask 45 may be a structured and annealed resist layer, for instance.
• the shape of the transfer mask 45 is transferred to the lens layer 35, in particular by etching. This technique of transferring a surface structure of an upper layer to a lower layer is known per se.
• the use of a lens layer and a transfer mask is only one way of producing a lens or array of lenses. The method is not restricted to this variant, and any other conventional method can be employed to produce a lens or array of lenses.
• Figure 25 is a cross section according to Figure 24 after the lens 15 or array of lenses 15 is formed.
• the transfer mask 45 is completely removed during or after the etching process.
• the lens layer 35 has been removed from all areas outside the area occupied by the lens 15 or array of lenses 15. Instead, portions of the lens layer 35 may remain in an area that is not occupied by the lens 15 or array of lenses 15, as in the embodiments according to Figures 7, 8, 9, 10 and 11.
• Figure 26 is a cross section according to Figure 25 after the formation of via holes in the semiconductor body 1.
• the via hole 19 is provided for an electric interconnection through the semiconductor body 1.
• An optical via 39 may be provided for a further optical component. It may be suitable if the sensor substrate 2 is recessed above the optical via 39 as shown in Figure 26.
• Figure 27 is a cross section according to Figure 26 after the application of a metallization 21 for the electric
• the embodiment according to Figure 3 can then be obtained by further method steps including the application of a molding material.
• the described system-on-chip camera allows to enhance the integration of optical components such as filters and lenses at wafer level and especially to reduce the size of the camera. Furthermore it facilitates the integration of multiple CMOS image sensors with discrete sensors such as ambient light sensors, colour sensors and/or time-of-flight sensors, for example.

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