WO2017211110A1 - Radiometer and manufacturing method thereof - Google Patents

Radiometer and manufacturing method thereof Download PDF

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Publication number
WO2017211110A1
WO2017211110A1 PCT/CN2017/079047 CN2017079047W WO2017211110A1 WO 2017211110 A1 WO2017211110 A1 WO 2017211110A1 CN 2017079047 W CN2017079047 W CN 2017079047W WO 2017211110 A1 WO2017211110 A1 WO 2017211110A1
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WO
WIPO (PCT)
Prior art keywords
substrate
radiometer
beam arm
groove
recess
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PCT/CN2017/079047
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French (fr)
Chinese (zh)
Inventor
费跃
王旭洪
张颖
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上海新微技术研发中心有限公司
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Publication of WO2017211110A1 publication Critical patent/WO2017211110A1/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22Electrical features thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units

Definitions

  • the present invention relates to the field of MEMS technology, and in particular, to a radiometer and a method of fabricating the same.
  • the Crookes radiometer is a device for detecting light and heat radiation.
  • a sealed glass bulb including a part of the vacuum, is provided with an upright shaft with the upper and lower glass pits as bearings in the glass body, the upper part of the shaft.
  • the black surface absorbs heat and light radiation, and the white surface reflects heat and light radiation. Since the blade heats the gas molecules near its surface, the gas temperature near the black surface is higher, so the molecular motion speed is larger. Since the reaction force of the gas molecules on the surface of the black blade is larger than that of the white surface, the blade is rotated, and the direction of rotation is black to the white side.
  • the technical problem to be solved by the present invention is to provide a radiometer and a method of manufacturing the same to manufacture a small-sized radiometer.
  • the present invention provides a radiometer comprising: a radiometer, comprising: a radiometer unit, the radiometer unit comprising: a substrate, the substrate having an opposite first a surface and a second surface; a first groove on a side of the first surface of the substrate; a cantilever beam comprising a cantilever beam and an anchor point suspended above the first groove, the anchor point being located on the substrate An absorbing layer on a side wall surface of the side of the cantilever; a second groove on a side of the second surface of the substrate, the first groove and the second groove penetrating, the second The groove is located within the longitudinal projection of the cantilever.
  • the radiometer unit further includes two stoppers respectively located on two sides of the beam arm, the stopper portion being located on the first surface of the substrate and partially on the surface of the sacrificial layer.
  • the cross-sectional pattern of the first groove parallel to the first surface of the substrate is semi-circular, square, rectangular or fan-shaped.
  • the beam arm has a width of 0.5 ⁇ m to 10 ⁇ m.
  • the absorbing layer has a thickness of 10 nm to 1 ⁇ m.
  • the material of the absorbing layer comprises amorphous carbon, chromium or manganese.
  • the second surface of the substrate is disposed above the image sensor, and the second groove is located above the photosensitive area of the image sensor.
  • the method further includes: a beam splitter disposed above the first surface of the substrate for reflecting visible light.
  • the beam splitter has an angle of 45° with the first surface of the substrate.
  • a package housing is further included, and the substrate is located in the package housing, and the pressure in the package housing is 0.1 Pa to 100 Pa.
  • a lens embedded in the top of the package housing is also included.
  • a plurality of radiometer units are included, the plurality of radiometer units being distributed in an array.
  • the technical solution of the present invention also provides a method for manufacturing a radiometer, comprising: providing a lining a substrate having opposite first and second surfaces; etching the substrate from the first surface, forming a first recess in the substrate; forming a sacrifice in the first recess a layer, the surface of the sacrificial layer being flush with the first surface of the substrate; forming a cantilever beam, the cantilever beam comprising a cantilever beam and an anchor point, the beam arm being located on a surface of the sacrificial layer, the anchor point being located on the first surface of the substrate; Forming an absorption layer on a side wall of one side of the beam arm; etching the substrate from the second surface, forming a second groove in the substrate, the first groove and the second groove penetrating through The second groove is located directly below the beam arm and has a width less than or equal to the width of the beam arm; the sacrificial layer is removed to suspend the beam arm.
  • the method for forming the cantilever beam comprises: forming a layer of a cantilever material on the first surface of the substrate and the surface of the sacrificial layer; and patterning the layer of the cantilever material to form the cantilever beam.
  • the cantilever material layer is patterned to form the cantilever beam
  • two stoppers are formed, the stopper portion is located on the first surface of the substrate, and is partially located on the surface of the sacrificial layer, and the two stoppers are respectively Located on either side of the beam arm.
  • the side wall surface of the suspended beam arm has an absorbing layer, and after absorbing the radiation, the beam arm can be bent to expose the second groove below the beam arm, thereby measuring the second groove through
  • the magnitude of the light intensity can determine the amount of radiant energy absorbed by the radiometer, which is small in size and has a wider application scenario.
  • 1 to 12 are schematic structural views showing a manufacturing process of a radiometer according to an embodiment of the present invention.
  • Figure 13 is a schematic view showing the beam arm of the radiometer after being bent according to an embodiment of the present invention.
  • FIG. 14 is a schematic structural view of a radiometer according to an embodiment of the present invention.
  • Figure 15 is a cross section of a beam of a radiometer beam that is not bent according to an embodiment of the present invention.
  • 16 is a schematic cross-sectional view showing a beam of a beam of a radiometer according to an embodiment of the present invention.
  • Figure 17 is a schematic view showing the structure of a radiometer according to an embodiment of the present invention.
  • a specific embodiment of the present invention provides a method of manufacturing a radiometer.
  • a substrate 100 is provided having a first surface 100a and a second surface 100b, the substrate 100 being etched from the first surface 100a, formed within the substrate 100
  • the first groove 101. 2 is a top plan view showing the first groove 101
  • FIG. 1 is a schematic cross-sectional view taken along line AA' of FIG. 2. The subsequent drawings are based on FIG. 1 and FIG. 2 and will not be described again.
  • the material of the substrate 100 includes semiconductor materials such as silicon, germanium, silicon germanium, gallium arsenide, etc., and the semiconductor substrate 100 may also be a composite structure such as silicon on insulator or the like. Those skilled in the art can select the type of the substrate 100 according to the device formed on the substrate 100, and thus the type of the substrate 100 should not limit the scope of protection of the present invention. In this embodiment, the material of the substrate 100 is monocrystalline silicon.
  • the substrate 100 has opposite first and second surfaces 100a, 100b, and the substrate 100 is etched from the first surface 100a to form the first recess 101.
  • the forming method of the first groove 101 includes: forming a patterned mask layer on the first surface 100a of the substrate 100, the patterned mask layer exposing a portion of the first surface 100a;
  • the patterned mask layer is a mask, and the substrate 100 is etched by a dry etching process to form a first recess 101.
  • the dry etching process may be a plasma etching process using CF 4 and Cl 2 as an etching gas.
  • the cross-sectional pattern of the first groove 101 parallel to the first surface 100a is semi-circular.
  • the cross section of the first groove 101 parallel to the first surface 100a may also be square, rectangular or fan shaped.
  • a sacrificial layer 201 is formed in the first recess 101 (please refer to FIG. 1), and the surface of the sacrificial layer 201 is flush with the first surface 100a of the substrate 100.
  • Fig. 3 is a schematic cross-sectional view taken along line BB' of Fig. 4.
  • the material of the sacrificial layer 201 may be a material different from the substrate 100 such as photoresist, silicon oxide, silicon nitride, silicon oxynitride or silicon oxycarbide.
  • the material of the sacrificial layer 201 is silicon oxide, and after the silicon oxide layer filling the first recess 101 and covering the first surface 101a of the substrate may be performed by a chemical vapor deposition process.
  • the silicon oxide layer is planarized to remove silicon oxide on the surface of the first surface 101a such that the silicon oxide layer located in the first recess 101 is flush with the surface of the first surface 101a.
  • the material of the sacrificial layer 201 is a photoresist, and the sacrificial layer 201 may be formed by a spin coating process.
  • a cantilever beam 300 is formed.
  • the cantilever beam 300 includes a beam arm 301 and an anchor point 302.
  • the beam arm 301 is located on a surface of the sacrificial layer 201, and the anchor point 302 is located on the first surface 100a of the substrate 100.
  • Figure 5 is a schematic cross-sectional view taken along line BB' of Figure 6.
  • the method for forming the cantilever beam 300 includes: forming a cantilever material layer covering the sacrificial layer 201 and the first surface 100a of the substrate 100; etching the cantilever material layer to pattern the cantilever material layer to form The cantilever beam 300.
  • the cantilever beam 300 is elongated, and the width of the beam arm 301 is consistent with the width of the anchor point 302. In other embodiments of the present invention, the width of the anchor point 302 may also be greater than the width of the beam arm 301 to increase the cantilever beam. 300 stability.
  • the width of the beam arm 301 is 0.5 ⁇ m to 10 ⁇ m, so that the beam arm 301 is not easy to undergo irreversible deformation, and can be bent in time.
  • the length of the beam arm 301 is slightly smaller than the radius of the cross section of the first groove 101 (please refer to FIG. 2 ), such that the beam arm 301 is completely located on the surface of the sacrificial layer 201, and after the sacrificial layer 201 is subsequently removed, the cantilever beam 201 It can be completely suspended above the first groove 101.
  • the material of the cantilever beam 300 is different from that of the substrate 100 and the sacrificial layer 201, and is a material having low thermal conductivity and high thermal insulation performance.
  • the material of the cantilever beam 300 is polysilicon. In other embodiments of the present invention, the material of the cantilever beam 300 may also be a metal such as aluminum, nickel or iron.
  • a stopper 303 is also formed, which is partially located on the first surface 100a of the substrate and partially on the surface of the sacrificial layer 201.
  • the number of the stoppers 303 is two, which are respectively located at two sides of the beam arm 301 for blocking the excessive bending of the beam arm 301.
  • the material of the stopper 303 coincides with the cantilever of the beam arm 301.
  • the bending direction of the beam arm 301 can be set in advance, and the distance between the stopper in the bending direction of the beam arm 301 and the beam arm 301 is large to provide sufficient space for the beam arm 301 to bend.
  • Fig. 7 is a schematic cross-sectional view taken along line BB' of Fig. 8.
  • the method of forming the absorbing layer 304 includes: forming an absorbing material layer covering the substrate 100, the sacrificial layer 201, and the cantilever beam 300; patterning the absorbing material layer to ensure The absorbing material layer on the side wall surface of the side of the beam arm 301 serves as the absorbing layer 304.
  • the absorbing material layer may be formed by a sputtering process.
  • the absorbing layer 304 also covers one side wall of the anchor point 302. In other embodiments of the present invention, the absorbing layer 304 is formed only on one side wall of the beam arm 301.
  • the absorbing layer 304 has a high absorption capacity for light and heat radiation, and is generally a black substance, and specifically may contain amorphous carbon, chromium or manganese.
  • the absorbing layer 304 is formed on the side wall opposite to the curved direction of the set beam arm 301, that is, the beam arm 301 will be bent from the side having the absorbing layer 304 to the other side. This is because during the measurement of the radiation, the side of the absorption layer 304 will absorb more heat, causing the thermal motion of the gas molecules near the absorption layer 304 to be intensified, striking the beam arm 301, causing the beam arm 301 to occur to the other side. bending.
  • the absorbing layer 304 needs to have sufficient thickness to absorb sufficient heat in a short time to bend the beam arm 301; at the same time, to avoid excessive stress of the absorbing layer 304, resulting in stress required for the cantilever beam 304 to bend. Larger, less easily measured for lower energy radiation.
  • the thickness of the absorbing layer 304 is 10 nm to 1 ⁇ m.
  • the substrate 100 is etched from the second surface 100b, and a second recess 102 is formed in the substrate 100, and the first recess 101 and the second recess 102 are penetrated.
  • the second groove 102 is located within the longitudinal projection of the beam arm 301.
  • 9 is a schematic cross-sectional view showing the second recess 102
  • FIG. 10 is a top plan view of the second surface 100b after the second recess 102 is formed.
  • the second surface 100b is etched by a dry etching process to form a second recess 102, and the second recess 102 is penetrated from the first recess 101.
  • the second groove 102 is located directly below the beam arm 301 and has a width less than or equal to the width of the beam arm 301 such that the second groove 102 is located within the longitudinal projection of the beam arm 301.
  • the beam arm 301 can completely block the second groove 102.
  • the sacrificial layer 201 is removed, and the beam arm 301 is suspended.
  • the sacrificial layer 201 may be removed by a wet etching process, and the wet etching solution may be a hydrofluoric acid solution or a nitric acid solution.
  • a source of visible light can be placed on one side of the radiometer.
  • the absorbing layer 304 of the sidewall of the beam arm 301 receives the radiant energy, the temperature rises, and the beam arm 301 itself has poor thermal conductivity and a low temperature.
  • the gas molecules around the absorbing layer 304 are heated and the movement is intensified, striking the absorbing layer 304, causing the beam arm 301 to bend toward the other side opposite to the absorbing layer 304, exposing the second groove 102, so that visible light can pass through the first
  • the two grooves 102 please refer to FIG.
  • the size of the radiant energy is measured.
  • the second surface 100b of the substrate 100 is disposed above the image sensor 400, and the second groove 102 is located above the photosensitive area of the image sensor 400.
  • the image sensor 400 may be a CMOS image sensor or a CCD image sensor.
  • the second groove 102 is located above the photosensitive area of the image sensor 400, and the visible light transmitted through the second groove 102 is irradiated onto the photosensitive area of the image sensor 400, and the optical signal is converted into an electrical signal by the image sensor 400, thereby
  • the electrical signal size measures the amount of visible light intensity. The greater the radiant energy received by the radiometer, the greater the degree of bending of the beam arm 301, the greater the exposure of the second recess 102, such that the greater the intensity of light reaching the image sensor 400 through the second recess 102, The electrical signal output by the image sensor is larger.
  • a beam splitter 500 is disposed over the first surface 100a of the substrate 100, It is used to reflect visible light and filter infrared light.
  • the beam splitter 500 can transmit infrared light and totally reflect the visible light, so that the incident light can be filtered, and only visible light enters the radiometer to prevent the infrared light from affecting the accuracy of the energy measurement of the radiation source.
  • the beam splitter 500 is at an angle of 45° with the first surface 100a of the substrate, so that the horizontally incident light can vertically illuminate the position of the beam arm 301.
  • the beam arm 301 blocks the second groove 102, the incident light is blocked from entering the second groove 102; when the radiometer receives the radiation, the beam arm 301 is bent. The second groove 102 is exposed, and the incident light is transmitted through the second groove 102 to the image sensor 400 (refer to FIG. 15).
  • the method further includes performing vacuum packaging such that the substrate 100 and the image sensor 400 and the beam splitter 500 are located in a cavity of the package housing, and the package housing may be a transparent housing.
  • the visible light is incident; or the package housing has a transparent window for transmitting visible light.
  • the pressure in the cavity of the package housing is 0.1 Pa to 100 Pa. If the pressure is too low, the amount of gas molecules in the cavity is too small to impact the beam arm 301 by thermal motion, and the cantilever beam is bent; The pressure inside is large, the number of gas molecules in the cavity is large, and the beam arm 301 is subjected to more gas resistance and cannot be bent.
  • a plurality of radiometer units 402 may be fabricated by the above method.
  • the radiometer units 402 are distributed in an array, and the incident light is reflected by the beam splitter 501 to illuminate the visible light.
  • the meter unit 402 can be used to measure the radiant energy of the radiation source 403 of a larger area.
  • the radiant energy of the different positions of the radiation source 403 is different, and the radiant energy received by the radiometer unit 402 at the corresponding different positions is different, thereby transmitting
  • the light intensity of the radiometer unit reaching the image sensor 401 is also not In the same way, the shape of the radiation source 403 and the distribution of the radiant energy can be determined by the electrical signal strength output by the image sensor 401. Further, the image sensor 401 can also image the radiation source 403 according to the received optical signal.
  • a lens may be disposed between the radiometer and the radiation source to concentrate the infrared light or the microwave emitted by the radiation source, so that the radiometer can receive the radiation energy emitted from each position of the radiation source.
  • the lens may be mounted on the top of the package housing.
  • a specific embodiment of the invention also provides a radiometer.
  • the radiometer comprises a radiometer unit, please refer to FIG. 10 to FIG. 12 for a schematic diagram of the radiometer unit.
  • the radiometer unit includes: a substrate 100 having opposing first and second surfaces 100a and 100b; a first recess 101 on a side of the first surface 100a of the substrate 100; and a cantilever 300
  • the suspension beam 300 includes a beam arm 301 and an anchor point 302 suspended above the first groove 101, the anchor point 302 being located on the first surface 100a of the substrate 100; and a side wall of the cantilever beam 300
  • the surface of the absorption layer 304; the second groove 102 on the side of the second surface 100b of the substrate 100, the first groove 101 and the second groove 102 penetrate, the second groove 102 is located
  • the beam arm 301 is directly below and has a width less than or equal to the width of the beam arm 301.
  • the material of the substrate 100 includes semiconductor materials such as silicon, germanium, silicon germanium, gallium arsenide, etc., and the semiconductor substrate 100 may also be a composite structure such as silicon on insulator or the like. Those skilled in the art can select the type of the substrate 100 according to the device formed on the substrate 100, and thus the type of the substrate 100 should not limit the scope of protection of the present invention. In this embodiment, the material of the substrate 100 is monocrystalline silicon.
  • the cross-sectional pattern of the first groove 101 parallel to the first surface 100a is semi-circular. In other embodiments of the invention, the first groove 101 is parallel to the first surface 100a
  • the cross section can also be square, rectangular or fan shaped.
  • the cantilever beam 300 is elongated, and the width of the beam arm 301 is consistent with the width of the anchor point 302. In other embodiments of the present invention, the width of the anchor point 302 may also be greater than the width of the beam arm 301 to improve the stability of the cantilever beam 300. If the width of the beam arm 301 is too small, the beam arm 301 is prone to irreversible deformation during the measurement of the heat radiation; if the width of the beam arm 301 is too large, then in the process of measuring the heat radiation, The beam arm 301 is less prone to bending, resulting in a large measurement error. As a specific embodiment of the present invention, the width of the beam arm 301 is 0.5 ⁇ m to 10 ⁇ m, so that the beam arm 301 is not easy to undergo irreversible deformation, and can be bent in time.
  • the length of the beam arm 301 is slightly smaller than the radius of the cross section of the first groove 101 such that the cantilever beam 201 can be completely suspended above the first groove 101.
  • the material of the cantilever beam 300 is a material having low thermal conductivity and high thermal insulation performance.
  • the treatment of the cantilever beam 300 is polysilicon.
  • the material of the cantilever beam 300 may also be a metal such as aluminum, nickel or iron.
  • the radiometer unit further includes a stop 303 that is partially located on the first surface 100a of the substrate 100 and partially suspended.
  • the number of the stoppers 303 is two, which are respectively located at two sides of the beam arm 301 for blocking the excessive bending of the beam arm 301.
  • the material of the stopper 303 coincides with the cantilever of the beam arm 301.
  • the bending direction of the beam arm 301 can be set in advance, and the distance between the stopper in the bending direction of the beam arm 301 and the beam arm 301 is large to provide sufficient space for the cantilever to bend.
  • the absorbing layer 304 has a high absorption capacity for light and heat radiation, and is generally a black substance, and specifically may contain amorphous carbon, chromium or manganese.
  • the absorbing layer 304 is located on a side wall of the beam arm 301 opposite to the bending direction, That is, the beam arm 301 will be bent from the side on which the absorption layer 304 is formed to the other side. This is because during the measurement of the radiation, the side of the absorption layer 304 will absorb more heat, causing the thermal motion of the gas molecules near the absorption layer 304 to be intensified, striking the beam arm 301, causing the beam arm 301 to occur to the other side. bending.
  • the absorbing layer 304 needs to have sufficient thickness to absorb sufficient heat in a short time to bend the beam arm 301; at the same time, to avoid excessive stress of the absorbing layer 304, resulting in stress required for the cantilever beam 304 to bend. Larger, less easily measured for lower energy radiation.
  • the thickness of the absorbing layer 304 is 10 nm to 1 ⁇ m.
  • the second groove 102 penetrates the first groove 101, and the second groove 102 is located directly below the beam arm 301, and the width is less than or equal to the width of the beam arm 301, so that the beam arm 301 can be the second concave
  • the slot 102 is completely obscured.
  • Figure 10 is a top plan view of the second surface 100b.
  • the absorption layer 304 of the sidewall of the beam arm 301 receives the radiation source energy, the temperature rises, and the beam arm 301 itself has poor thermal conductivity and low temperature.
  • the gas molecules around the absorbing layer 304 are heated and the movement is intensified, striking the absorbing layer 304, causing the beam arm 301 to bend toward the other side opposite to the absorbing layer 304, exposing the second groove 102, so that visible light can pass through the first
  • the two grooves 102 please refer to FIG.
  • the greater the light energy of the radiation source the greater the degree of bending of the beam arm 301, and the larger the area of the exposed second groove 102.
  • the second surface 100b of the substrate 100 is disposed above the image sensor 400, and the second groove 102 is located above the photosensitive area of the image sensor 400.
  • the image sensor 400 may be a CMOS image sensor or a CCD image sensor.
  • the second groove 102 is located above the photosensitive area of the image sensor 400, and the visible light transmitted through the second groove 102 is irradiated onto the photosensitive area of the image sensor 400, and the optical signal is converted into an electrical signal by the image sensor 400, thereby
  • the electrical signal size measures the amount of visible light intensity. The greater the radiant energy received by the radiometer, the greater the degree of bending of the beam arm 301, the greater the exposure of the second recess 102, such that the greater the intensity of light reaching the image sensor 400 through the second recess 102, The electrical signal output by the image sensor 400 is larger.
  • a beam splitter 500 disposed over the first surface 100a of the substrate 100 is further included for reflecting visible light.
  • the beam splitter 500 can transmit infrared light and totally reflect the visible light, so that the incident light can be filtered, and only visible light enters the radiometer to prevent the infrared light from affecting the measurement result.
  • the beam splitter 500 is at an angle of 45° with the first surface 100a of the substrate, so that the horizontally incident light can vertically illuminate the position of the beam arm 301.
  • the beam arm 301 blocks the second groove 102, the incident light is blocked from entering the second groove 102; when the radiometer receives the radiation, the beam arm 301 is bent. The second groove 102 is exposed, and the incident light is transmitted through the second groove 102 to the image sensor 400 (refer to FIG. 15).
  • the radiometer further includes a package housing, and the substrate 100 is located in the package housing, and the pressure in the package housing is 0.1 Pa to 100 Pa, so that there is sufficient inside the package housing.
  • the gas molecules can impact the beam arm 301 by thermal motion to bend the beam arm 301; and avoid excessive amounts of gas molecules, so that the beam arm 301 is subjected to more gas resistance and cannot be bent.
  • the radiometer further includes a plurality of radiating units 402, and the radiometer units 402 are arranged in an array, and the incident light is transmitted.
  • the visible light is irradiated to the radiometer unit 402, which can be used to measure the radiant energy of the radiation source 403 of a large area.
  • the splitter 501 can also be a complete beam splitter.
  • the radiation energy of different positions of the radiation source 403 is different, and the radiation energy received by the radiometer unit at the corresponding different positions is also different, so that the light intensity reaching the image sensor 401 through the radiometer unit is also different, so that the image sensor can pass through the image sensor.
  • the electrical signal strength output by 401 determines the shape of the radiation source 403 and the distribution of the radiant energy. Further, the image sensor 401 can also image the radiation source 403 according to the received optical signal.
  • a lens is disposed between the radiometer and the radiation source 403 to converge the infrared light or microwave emitted by the radiation source 403, so that the radiometer can receive the position of the radiation source 403. Radiation energy.
  • the lens can be mounted on top of the package housing.

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Abstract

A radiometer and manufacturing method thereof. The radiometer comprises: a radiometer unit (402) comprising: a substrate (100) having a first surface (100a) and a second surface (100b) configured opposite thereto; a first recess (101) located at an end of the first surface (100a) of the substrate (100); a suspending beam (300) comprising a beam arm (301) and an anchor (302), wherein the beam arm (301) suspends above the first recess (101), and the anchor (302) is located on the first surface (100a) of the substrate (100); an absorption layer located at a side wall surface of the beam arm (301); and a second recess (102) located at an end of the second surface (100b) of the substrate (100). The first recess (101) and the second recess (102) communicates with each other. The second recess (102) is located in an orthogonal projection of the beam arm (301). The radio meter is compact in size.

Description

辐射计及其制造方法Radiometer and its manufacturing method 技术领域Technical field
本发明涉及微机电系统技术领域,尤其涉及一种辐射计及其制造方法。The present invention relates to the field of MEMS technology, and in particular, to a radiometer and a method of fabricating the same.
背景技术Background technique
克鲁克斯辐射计是用来检测光和热辐射的器件,一个密封的玻璃球壳,包括真空的一部分,在玻璃体内装有一个由上下两个玻璃凹坑作为轴承的直立轴,轴的上部相隔90°有四个与主轴平行的金属片作成的叶片,通过细钢丝与主轴垂直相连,金属片的两侧面分别为白色及黑色,当有足够强的光线或热辐射照射到叶片上时,叶片就开始绕直立轴转动,辐射越强,转速越快。The Crookes radiometer is a device for detecting light and heat radiation. A sealed glass bulb, including a part of the vacuum, is provided with an upright shaft with the upper and lower glass pits as bearings in the glass body, the upper part of the shaft. A blade made of a metal piece parallel to the main axis separated by 90°, is vertically connected to the main shaft by a thin steel wire, and the two sides of the metal piece are respectively white and black, when there is sufficient strong light or heat radiation to the blade. The blades begin to rotate about the vertical axis, and the stronger the radiation, the faster the speed.
按照辐射理论,黑面吸收热和光辐射,白面反射热和光辐射,由于叶片对其表面附近的气体分子加热,使黑色表面附近的气体温度较高,因此分子运动速度较大。由于气体分子运动时对黑色叶片表面的反作用力比白色一面大,因此使叶片旋转,并且旋转方向为黑色向白色一面转动。According to the radiation theory, the black surface absorbs heat and light radiation, and the white surface reflects heat and light radiation. Since the blade heats the gas molecules near its surface, the gas temperature near the black surface is higher, so the molecular motion speed is larger. Since the reaction force of the gas molecules on the surface of the black blade is larger than that of the white surface, the blade is rotated, and the direction of rotation is black to the white side.
传统的克鲁克斯辐射计体积较大,应用场景较少,且容易受到外力损坏。所以,现有辐射计的体积需要进一步的减小。Traditional Crooks radiometers are bulky, have fewer application scenarios, and are susceptible to damage from external forces. Therefore, the volume of existing radiometers needs to be further reduced.
发明内容Summary of the invention
本发明所要解决的技术问题是,提供一种辐射计及其制造方法,以制造小尺寸的辐射计。 The technical problem to be solved by the present invention is to provide a radiometer and a method of manufacturing the same to manufacture a small-sized radiometer.
为了解决上述问题,本发明提供了一种辐射计,包括:一种辐射计,其特征在于,包括:辐射计单元,所述辐射计单元包括:衬底,所述衬底具有相对的第一表面和第二表面;位于衬底第一表面一侧的第一凹槽;悬梁,所述悬梁包括悬梁和锚点,所述悬梁悬空于第一凹槽上方,所述锚点位于衬底第一表面上;位于所述悬梁一侧侧壁表面的吸收层;位于所述衬底第二表面一侧的第二凹槽,所述第一凹槽与第二凹槽贯通,所述第二凹槽位于所述悬梁的纵向投影内。In order to solve the above problems, the present invention provides a radiometer comprising: a radiometer, comprising: a radiometer unit, the radiometer unit comprising: a substrate, the substrate having an opposite first a surface and a second surface; a first groove on a side of the first surface of the substrate; a cantilever beam comprising a cantilever beam and an anchor point suspended above the first groove, the anchor point being located on the substrate An absorbing layer on a side wall surface of the side of the cantilever; a second groove on a side of the second surface of the substrate, the first groove and the second groove penetrating, the second The groove is located within the longitudinal projection of the cantilever.
可选的,所述辐射计单元还包括两个挡块,所述两个挡块分别位于梁臂的两侧,所述挡块部分位于衬底第一表面,部分位于牺牲层表面。Optionally, the radiometer unit further includes two stoppers respectively located on two sides of the beam arm, the stopper portion being located on the first surface of the substrate and partially on the surface of the sacrificial layer.
可选的,所述第一凹槽平行于衬底第一表面的截面图形为半圆形、正方形、矩形或扇形。Optionally, the cross-sectional pattern of the first groove parallel to the first surface of the substrate is semi-circular, square, rectangular or fan-shaped.
可选的,所述梁臂的宽度为0.5μm~10μm。Optionally, the beam arm has a width of 0.5 μm to 10 μm.
可选的,所述吸收层的厚度为10nm~1μm。Optionally, the absorbing layer has a thickness of 10 nm to 1 μm.
可选的,所述吸收层的材料包括无定型碳、铬或锰。Optionally, the material of the absorbing layer comprises amorphous carbon, chromium or manganese.
可选的,所述衬底第二表面设置于图像传感器上方,所述第二凹槽位于图像传感器的感光区域上方。Optionally, the second surface of the substrate is disposed above the image sensor, and the second groove is located above the photosensitive area of the image sensor.
可选的,还包括:设置于衬底的第一表面上方的分光片,用于反射可见光。Optionally, the method further includes: a beam splitter disposed above the first surface of the substrate for reflecting visible light.
可选的,所述分光片与衬底的第一表面之间呈45°夹角。Optionally, the beam splitter has an angle of 45° with the first surface of the substrate.
可选的,还包括封装壳体,所述衬底位于封装壳体内,所述封装壳体内的压强为0.1Pa~100Pa。Optionally, a package housing is further included, and the substrate is located in the package housing, and the pressure in the package housing is 0.1 Pa to 100 Pa.
可选的,还包括镶嵌于封装壳体顶部的透镜。Optionally, a lens embedded in the top of the package housing is also included.
可选的,包括多个辐射计单元,所述多个辐射计单元呈阵列分布。Optionally, a plurality of radiometer units are included, the plurality of radiometer units being distributed in an array.
本发明的技术方案还提供一种辐射计的制造方法,包括:提供衬 底,所述衬底具有相对的第一表面和第二表面;从第一表面刻蚀所述衬底,在所述衬底内形成第一凹槽;在所述第一凹槽内形成牺牲层,所述牺牲层表面与衬底第一表面齐平;形成悬梁,所述悬梁包括悬梁和锚点,所述梁臂位于牺牲层表面,所述锚点位于衬底第一表面上;在所述梁臂一侧侧壁表面形成吸收层;从第二表面刻蚀所述衬底,在所述衬底内形成第二凹槽,所述第一凹槽与第二凹槽贯通,所述第二凹槽位于梁臂正下方,且宽度小于或等于梁臂的宽度;去除所述牺牲层,使所述梁臂悬空。The technical solution of the present invention also provides a method for manufacturing a radiometer, comprising: providing a lining a substrate having opposite first and second surfaces; etching the substrate from the first surface, forming a first recess in the substrate; forming a sacrifice in the first recess a layer, the surface of the sacrificial layer being flush with the first surface of the substrate; forming a cantilever beam, the cantilever beam comprising a cantilever beam and an anchor point, the beam arm being located on a surface of the sacrificial layer, the anchor point being located on the first surface of the substrate; Forming an absorption layer on a side wall of one side of the beam arm; etching the substrate from the second surface, forming a second groove in the substrate, the first groove and the second groove penetrating through The second groove is located directly below the beam arm and has a width less than or equal to the width of the beam arm; the sacrificial layer is removed to suspend the beam arm.
可选的,所述悬梁的形成方法包括:在所述衬底第一表面和牺牲层表面形成悬梁材料层;对所述悬梁材料层进行图形化,形成所述悬梁。Optionally, the method for forming the cantilever beam comprises: forming a layer of a cantilever material on the first surface of the substrate and the surface of the sacrificial layer; and patterning the layer of the cantilever material to form the cantilever beam.
可选的,对所述悬梁材料层进行图形化形成悬梁的同时,形成两个挡块,所述挡块部分位于衬底第一表面上,部分位于牺牲层表面,所述两个挡块分别位于梁臂的两侧。Optionally, while the cantilever material layer is patterned to form the cantilever beam, two stoppers are formed, the stopper portion is located on the first surface of the substrate, and is partially located on the surface of the sacrificial layer, and the two stoppers are respectively Located on either side of the beam arm.
本发明的辐射计中,悬空的梁臂侧壁表面具有吸收层,在吸收辐射之后,能够使得梁臂发生弯曲,暴露出梁臂下方的第二凹槽,从而通过测量第二凹槽透过的光强大小就可以判断辐射计吸收到的辐射能量的大小,所述辐射计体积小,应用场景更广泛。In the radiometer of the present invention, the side wall surface of the suspended beam arm has an absorbing layer, and after absorbing the radiation, the beam arm can be bent to expose the second groove below the beam arm, thereby measuring the second groove through The magnitude of the light intensity can determine the amount of radiant energy absorbed by the radiometer, which is small in size and has a wider application scenario.
附图说明DRAWINGS
图1至图12是本发明一具体实施方式的辐射计的制造过程的结构示意图;1 to 12 are schematic structural views showing a manufacturing process of a radiometer according to an embodiment of the present invention;
图13是本发明一具体实施方式的辐射计的梁臂发生弯曲后的示意图;Figure 13 is a schematic view showing the beam arm of the radiometer after being bent according to an embodiment of the present invention;
图14是本发明一具体实施方式的辐射计的结构示意图;14 is a schematic structural view of a radiometer according to an embodiment of the present invention;
图15是本发明一具体实施方式的辐射计梁臂未发生弯曲的剖面 示意图;Figure 15 is a cross section of a beam of a radiometer beam that is not bent according to an embodiment of the present invention. schematic diagram;
图16是本发明一具体实施方式的辐射计梁臂发生弯曲后的剖面示意图;16 is a schematic cross-sectional view showing a beam of a beam of a radiometer according to an embodiment of the present invention;
图17是本发明一具体实施方式的辐射计的结构示意图。Figure 17 is a schematic view showing the structure of a radiometer according to an embodiment of the present invention.
具体实施方式detailed description
下面结合附图对本发明提供的辐射计及其制造方法的具体实施方式做详细说明。The specific embodiments of the radiometer and the manufacturing method thereof provided by the present invention will be described in detail below with reference to the accompanying drawings.
本发明的具体实施方式提供一种辐射计的制造方法。A specific embodiment of the present invention provides a method of manufacturing a radiometer.
请参考图1和图2,提供衬底100,所述衬底100具有第一表面100a和第二表面100b,从第一表面100a刻蚀所述衬底100,在所述衬底100内形成第一凹槽101。图2为形成所述第一凹槽101之后的俯视示意图,图1为沿图2中割线AA’的剖面示意图。后续附图均以图1和图2为基础,不再赘述。Referring to FIGS. 1 and 2, a substrate 100 is provided having a first surface 100a and a second surface 100b, the substrate 100 being etched from the first surface 100a, formed within the substrate 100 The first groove 101. 2 is a top plan view showing the first groove 101, and FIG. 1 is a schematic cross-sectional view taken along line AA' of FIG. 2. The subsequent drawings are based on FIG. 1 and FIG. 2 and will not be described again.
所述衬底100的材料包括硅、锗、锗化硅、砷化镓等半导体材料,所述半导体衬底100也可以是复合结构如绝缘体上硅等。本领域的技术人员可以根据衬底100上形成的器件选择所述衬底100的类型,因此所述衬底100的类型不应限制本发明的保护范围。本实施例中,所述衬底100的材料为单晶硅。The material of the substrate 100 includes semiconductor materials such as silicon, germanium, silicon germanium, gallium arsenide, etc., and the semiconductor substrate 100 may also be a composite structure such as silicon on insulator or the like. Those skilled in the art can select the type of the substrate 100 according to the device formed on the substrate 100, and thus the type of the substrate 100 should not limit the scope of protection of the present invention. In this embodiment, the material of the substrate 100 is monocrystalline silicon.
所述衬底100具有相对的两个第一表面100a和第二表面100b,从第一表面100a刻蚀所述衬底100,形成所述第一凹槽101。具体的,所述第一凹槽101的形成方法包括:在所述衬底100的第一表面100a上形成图形化掩膜层,所述图形化掩膜层暴露出部分第一表面100a;以所述图形化掩膜层为掩膜,采用干法刻蚀工艺刻蚀所述衬底100,形成第一凹槽101。所述干法刻蚀工艺可以是等离子体刻蚀工艺,采用CF4和Cl2作为刻蚀气体。 The substrate 100 has opposite first and second surfaces 100a, 100b, and the substrate 100 is etched from the first surface 100a to form the first recess 101. Specifically, the forming method of the first groove 101 includes: forming a patterned mask layer on the first surface 100a of the substrate 100, the patterned mask layer exposing a portion of the first surface 100a; The patterned mask layer is a mask, and the substrate 100 is etched by a dry etching process to form a first recess 101. The dry etching process may be a plasma etching process using CF 4 and Cl 2 as an etching gas.
作为本发明的一个具体实施方式,所述第一凹槽101平行于第一表面100a的截面图形为半圆形。在本发明的其他实施例中,所述第一凹槽101平行于第一表面100a的截面还可以是正方形、矩形或扇形。As a specific embodiment of the present invention, the cross-sectional pattern of the first groove 101 parallel to the first surface 100a is semi-circular. In other embodiments of the present invention, the cross section of the first groove 101 parallel to the first surface 100a may also be square, rectangular or fan shaped.
请参考图3和图4,在所述第一凹槽101(请参考图1)内形成牺牲层201,所述牺牲层201表面与衬底100的第一表面100a齐平。图3为沿图4中割线BB’的剖面示意图。Referring to FIGS. 3 and 4, a sacrificial layer 201 is formed in the first recess 101 (please refer to FIG. 1), and the surface of the sacrificial layer 201 is flush with the first surface 100a of the substrate 100. Fig. 3 is a schematic cross-sectional view taken along line BB' of Fig. 4.
所述牺牲层201的材料可以是光刻胶、氧化硅、氮化硅、氮氧化硅或碳氧化硅等与衬底100不同的材料。本发明的一个具体实施方式中,所述牺牲层201的材料为氧化硅,可以采用化学气相沉积工艺在填充满所述第一凹槽101并覆盖衬底第一表面101a的氧化硅层之后,对所述氧化硅层进行平坦化,去除位于第一表面101a表面的氧化硅,使位于所述第一凹槽101内的氧化硅层与第一表面101a表面齐平。作为本发明的另一具体实施方式,所述牺牲层201的材料为光刻胶,可以采用旋涂工艺形成所述牺牲层201。The material of the sacrificial layer 201 may be a material different from the substrate 100 such as photoresist, silicon oxide, silicon nitride, silicon oxynitride or silicon oxycarbide. In a specific embodiment of the present invention, the material of the sacrificial layer 201 is silicon oxide, and after the silicon oxide layer filling the first recess 101 and covering the first surface 101a of the substrate may be performed by a chemical vapor deposition process. The silicon oxide layer is planarized to remove silicon oxide on the surface of the first surface 101a such that the silicon oxide layer located in the first recess 101 is flush with the surface of the first surface 101a. As another embodiment of the present invention, the material of the sacrificial layer 201 is a photoresist, and the sacrificial layer 201 may be formed by a spin coating process.
请参考图5和图6,形成悬梁300,所述悬梁300包括梁臂301和锚点302,所述梁臂301位于牺牲层201表面,所述锚点302位于衬底100的第一表面100a上。图5为沿图6中割线BB’的剖面示意图。Referring to FIGS. 5 and 6, a cantilever beam 300 is formed. The cantilever beam 300 includes a beam arm 301 and an anchor point 302. The beam arm 301 is located on a surface of the sacrificial layer 201, and the anchor point 302 is located on the first surface 100a of the substrate 100. on. Figure 5 is a schematic cross-sectional view taken along line BB' of Figure 6.
所述悬梁300的形成方法包括:形成覆盖所述牺牲层201和衬底100的第一表面100a的悬梁材料层;刻蚀所述悬梁材料层,以对所述悬梁材料层进行图形化,形成所述悬梁300。The method for forming the cantilever beam 300 includes: forming a cantilever material layer covering the sacrificial layer 201 and the first surface 100a of the substrate 100; etching the cantilever material layer to pattern the cantilever material layer to form The cantilever beam 300.
作为本发明的一个具体实施方式,所述悬梁300为长条形,梁臂301的宽度与锚点302的宽度一致。在本发明的其他实施方式中,所述锚点302的宽度还可以大于所述梁臂301的宽度,提高所述悬梁 300的稳固性。As a specific embodiment of the present invention, the cantilever beam 300 is elongated, and the width of the beam arm 301 is consistent with the width of the anchor point 302. In other embodiments of the present invention, the width of the anchor point 302 may also be greater than the width of the beam arm 301 to increase the cantilever beam. 300 stability.
如果所述梁臂301的宽度过小,则后续在测量热辐射的过程中,梁臂301容易发生不可恢复的形变;如果梁臂301的宽度过大,则后续在测量热辐射的过程中,梁臂301不易发生弯曲,导致测量误差较大。作为本发明的一个具体实施方式,所述梁臂301的宽度为0.5μm~10μm,以使得所述梁臂301既不易发生不可恢复的形变,又能及时产生弯曲。If the width of the beam arm 301 is too small, the beam arm 301 is prone to irreversible deformation during the measurement of the heat radiation; if the width of the beam arm 301 is too large, then in the process of measuring the heat radiation, The beam arm 301 is less prone to bending, resulting in a large measurement error. As a specific embodiment of the present invention, the width of the beam arm 301 is 0.5 μm to 10 μm, so that the beam arm 301 is not easy to undergo irreversible deformation, and can be bent in time.
所述梁臂301的长度略小于第一凹槽101(请参考图2)截面的半径,使得所述梁臂301完全位于牺牲层201表面,后续去除所述牺牲层201之后,所述悬梁201在第一凹槽101上方能够完全悬空。The length of the beam arm 301 is slightly smaller than the radius of the cross section of the first groove 101 (please refer to FIG. 2 ), such that the beam arm 301 is completely located on the surface of the sacrificial layer 201, and after the sacrificial layer 201 is subsequently removed, the cantilever beam 201 It can be completely suspended above the first groove 101.
所述悬梁300的材料与衬底100、牺牲层201的材料均不同,为导热性能较低,具有较高隔热性能的材料。作为本发明的一个具体实施方式,所述悬梁300的材料为多晶硅。在本发明的其他实施方式中,所述悬梁300的材料还可以是金属,例如铝、镍或铁等。The material of the cantilever beam 300 is different from that of the substrate 100 and the sacrificial layer 201, and is a material having low thermal conductivity and high thermal insulation performance. As a specific embodiment of the present invention, the material of the cantilever beam 300 is polysilicon. In other embodiments of the present invention, the material of the cantilever beam 300 may also be a metal such as aluminum, nickel or iron.
作为本发明的一个具体实施方式,对悬梁材料层进行图形化形成悬梁300的同时,还形成挡块303,所述挡块303部分位于衬底第一表面100a上,部分位于牺牲层201表面。作为一个具体实施方式,所述挡块303数量为两个,分别位于梁臂301的两侧,用于阻挡梁臂301发生过度弯曲。所述挡块303的材料与梁臂301的悬梁一致。可以提前设定梁臂301的弯曲方向,在梁臂301弯曲方向上的挡块与梁臂301之间的距离较大,以提供足够的空间使得梁臂301发生弯曲。As a specific embodiment of the present invention, while the cantilever material layer is patterned to form the cantilever beam 300, a stopper 303 is also formed, which is partially located on the first surface 100a of the substrate and partially on the surface of the sacrificial layer 201. As a specific embodiment, the number of the stoppers 303 is two, which are respectively located at two sides of the beam arm 301 for blocking the excessive bending of the beam arm 301. The material of the stopper 303 coincides with the cantilever of the beam arm 301. The bending direction of the beam arm 301 can be set in advance, and the distance between the stopper in the bending direction of the beam arm 301 and the beam arm 301 is large to provide sufficient space for the beam arm 301 to bend.
请参考图7和图8,在所述梁臂301一侧侧壁表面形成吸收层304。图7为沿图8中割线BB’的剖面示意图。Referring to FIGS. 7 and 8, an absorbing layer 304 is formed on the side wall surface of one side of the beam arm 301. Fig. 7 is a schematic cross-sectional view taken along line BB' of Fig. 8.
形成所述吸收层304的方法包括:形成覆盖所述衬底100、牺牲层201和悬梁300的吸收材料层;对所述吸收材料层进行图形化,保 留梁臂301一侧侧壁表面的吸收材料层,作为吸收层304。具体的,可以采用溅射工艺形成所述吸收材料层。本实施方式中,所述吸收层304还同时覆盖锚点302的一侧侧壁,在本发明的其他具体实施方式中,仅在梁臂301的一侧侧壁上形成所述吸收层304。The method of forming the absorbing layer 304 includes: forming an absorbing material layer covering the substrate 100, the sacrificial layer 201, and the cantilever beam 300; patterning the absorbing material layer to ensure The absorbing material layer on the side wall surface of the side of the beam arm 301 serves as the absorbing layer 304. Specifically, the absorbing material layer may be formed by a sputtering process. In the present embodiment, the absorbing layer 304 also covers one side wall of the anchor point 302. In other embodiments of the present invention, the absorbing layer 304 is formed only on one side wall of the beam arm 301.
所述吸收层304对光和热辐射具有较高吸收能力,一般为黑色物质,具体的可以包无定型碳、铬或锰等材料。The absorbing layer 304 has a high absorption capacity for light and heat radiation, and is generally a black substance, and specifically may contain amorphous carbon, chromium or manganese.
具体的,在与设定的梁臂301的弯曲方向相对的侧壁上形成所述吸收层304,即后续所述梁臂301将从有吸收层304的一侧向另一侧发生弯曲。这是由于在测量辐射过程中,吸收层304一侧将会吸收较多的热量,使吸收层304附近的气体分子热运动加剧,撞击所述梁臂301,使得梁臂301向另一侧发生弯曲。Specifically, the absorbing layer 304 is formed on the side wall opposite to the curved direction of the set beam arm 301, that is, the beam arm 301 will be bent from the side having the absorbing layer 304 to the other side. This is because during the measurement of the radiation, the side of the absorption layer 304 will absorb more heat, causing the thermal motion of the gas molecules near the absorption layer 304 to be intensified, striking the beam arm 301, causing the beam arm 301 to occur to the other side. bending.
所述吸收层304需要具有足够的厚度,能够在短时间内吸收足够的热量,使梁臂301发生弯曲;同时又要避免所述吸收层304的厚度过大,导致悬梁304发生弯曲需要的应力较大,而不易对较低能量的辐射进行测量。在本发明的一个具体实施方式中,所述吸收层304的厚度为10nm~1μm。The absorbing layer 304 needs to have sufficient thickness to absorb sufficient heat in a short time to bend the beam arm 301; at the same time, to avoid excessive stress of the absorbing layer 304, resulting in stress required for the cantilever beam 304 to bend. Larger, less easily measured for lower energy radiation. In a specific embodiment of the present invention, the thickness of the absorbing layer 304 is 10 nm to 1 μm.
请参考图9和图10,从第二表面100b刻蚀所述衬底100,在所述衬底100内形成第二凹槽102,所述第一凹槽101与第二凹槽102贯通,所述第二凹槽102位于梁臂301的纵向投影内。图9为形成所述第二凹槽102之后的剖面示意图,图10为形成第二凹槽102之后的第二表面100b的俯视示意图。Referring to FIG. 9 and FIG. 10, the substrate 100 is etched from the second surface 100b, and a second recess 102 is formed in the substrate 100, and the first recess 101 and the second recess 102 are penetrated. The second groove 102 is located within the longitudinal projection of the beam arm 301. 9 is a schematic cross-sectional view showing the second recess 102, and FIG. 10 is a top plan view of the second surface 100b after the second recess 102 is formed.
采用干法刻蚀工艺刻蚀所述第二表面100b,形成第二凹槽102,使所述第二凹槽102与第一凹槽101贯通。The second surface 100b is etched by a dry etching process to form a second recess 102, and the second recess 102 is penetrated from the first recess 101.
所述第二凹槽102位于梁臂301正下方,且宽度小于或等于梁臂301的宽度,从而使得第二凹槽102位于梁臂301的纵向投影内,所 述梁臂301能够将第二凹槽102完全遮挡。The second groove 102 is located directly below the beam arm 301 and has a width less than or equal to the width of the beam arm 301 such that the second groove 102 is located within the longitudinal projection of the beam arm 301. The beam arm 301 can completely block the second groove 102.
请参考图11和图12,去除所述牺牲层201,使所述梁臂301悬空。Referring to FIG. 11 and FIG. 12, the sacrificial layer 201 is removed, and the beam arm 301 is suspended.
可以采用湿法刻蚀工艺去除所述牺牲层201,所述湿法刻蚀的溶液可以是氢氟酸溶液或硝酸溶液。The sacrificial layer 201 may be removed by a wet etching process, and the wet etching solution may be a hydrofluoric acid solution or a nitric acid solution.
在测量辐射源能量的同时,可以在辐射计一侧放置可见光源。所述梁臂301在接受辐射源照射时,梁臂301侧壁的吸收层304接收辐射能量,温度升高,而梁臂301本身的导热性能较差,温度较低。吸收层304周围的气体分子受热,运动加剧,撞击吸收层304,使得梁臂301向与吸收层304相对的另一侧发生弯曲,暴露出第二凹槽102,使得可见光能够透过所述第二凹槽102,请参考图13。辐射源能量越大,梁臂301弯曲程度越大,暴露出的第二凹槽102的面积越大,从而第二凹槽102透过的可见光光强越大,从而可以通过测量透过光强的大小,对辐射能量进行测量。While measuring the energy of the radiation source, a source of visible light can be placed on one side of the radiometer. When the beam arm 301 is irradiated by the radiation source, the absorbing layer 304 of the sidewall of the beam arm 301 receives the radiant energy, the temperature rises, and the beam arm 301 itself has poor thermal conductivity and a low temperature. The gas molecules around the absorbing layer 304 are heated and the movement is intensified, striking the absorbing layer 304, causing the beam arm 301 to bend toward the other side opposite to the absorbing layer 304, exposing the second groove 102, so that visible light can pass through the first For the two grooves 102, please refer to FIG. The greater the energy of the radiation source, the greater the bending of the beam arm 301, and the larger the area of the exposed second groove 102, so that the visible light intensity transmitted by the second groove 102 is greater, so that the transmitted light intensity can be measured. The size of the radiant energy is measured.
请参考图14,将所述衬底100的第二表面100b设置于图像传感器400上方,所述第二凹槽102位于图像传感器400的感光区域上方。Referring to FIG. 14, the second surface 100b of the substrate 100 is disposed above the image sensor 400, and the second groove 102 is located above the photosensitive area of the image sensor 400.
所述图像传感器400可以是CMOS图像传感器或CCD图像传感器。The image sensor 400 may be a CMOS image sensor or a CCD image sensor.
所述第二凹槽102位于图像传感器400的感光区域上方,透过第二凹槽102的可见光照射到图像传感器400的感光区域上方,通过图像传感器400将光信号转换成电信号,从而可以通过电信号大小衡量可见光强度大小。辐射计接收到的辐射能量越大,梁臂301弯曲程度越大,暴露出第二凹槽102越大,从而透过所述第二凹槽102到达图像传感器400的光强越大,所述图像传感器输出的电信号越大。The second groove 102 is located above the photosensitive area of the image sensor 400, and the visible light transmitted through the second groove 102 is irradiated onto the photosensitive area of the image sensor 400, and the optical signal is converted into an electrical signal by the image sensor 400, thereby The electrical signal size measures the amount of visible light intensity. The greater the radiant energy received by the radiometer, the greater the degree of bending of the beam arm 301, the greater the exposure of the second recess 102, such that the greater the intensity of light reaching the image sensor 400 through the second recess 102, The electrical signal output by the image sensor is larger.
请参考图15,在衬底100的第一表面100a上方设置分光片500, 用于反射可见光,过滤红外光。Referring to FIG. 15, a beam splitter 500 is disposed over the first surface 100a of the substrate 100, It is used to reflect visible light and filter infrared light.
所述分光片500可以透过红外光,而对可见光进行全反射,从而可以对入射光进行过滤,仅有可见光进入辐射计,避免红外光影响对辐射源能量测量的准确性。The beam splitter 500 can transmit infrared light and totally reflect the visible light, so that the incident light can be filtered, and only visible light enters the radiometer to prevent the infrared light from affecting the accuracy of the energy measurement of the radiation source.
作为本发明的一个具体实施方式,所述分光片500与衬底第一表面100a之间呈45°夹角,使得水平入射的光线,能够垂直照射所述梁臂301所在位置。As a specific embodiment of the present invention, the beam splitter 500 is at an angle of 45° with the first surface 100a of the substrate, so that the horizontally incident light can vertically illuminate the position of the beam arm 301.
当所述辐射计没有接受到辐射时,梁臂301遮挡第二凹槽102,入射光被阻挡,无法进入第二凹槽102;当所述辐射计接受到辐射时,梁臂301发生弯曲,暴露出第二凹槽102,入射光透过第二凹槽102,照射到图像传感器400上(请参考图15)。When the radiometer does not receive the radiation, the beam arm 301 blocks the second groove 102, the incident light is blocked from entering the second groove 102; when the radiometer receives the radiation, the beam arm 301 is bent. The second groove 102 is exposed, and the incident light is transmitted through the second groove 102 to the image sensor 400 (refer to FIG. 15).
作为本发明的一个具体实施方式,还包括进行真空封装,使得衬底100和图像传感器400以及分光片500等均位于封装壳体的空腔内,所述封装壳体可以是透明壳体,便于可见光入射;或者所述封装壳体上具体有透明窗口,可使可见光透过。所述封装壳体空腔内的压强为0.1Pa~100Pa,所述压强如果过低,会导致空腔内气体分子数量过少,无法通过热运动撞击梁臂301,使悬梁弯曲;如果空腔内的压强较大,空腔内的气体分子数量较多,梁臂301会受到较多的气体阻力,无法发生弯曲。As a specific embodiment of the present invention, the method further includes performing vacuum packaging such that the substrate 100 and the image sensor 400 and the beam splitter 500 are located in a cavity of the package housing, and the package housing may be a transparent housing. The visible light is incident; or the package housing has a transparent window for transmitting visible light. The pressure in the cavity of the package housing is 0.1 Pa to 100 Pa. If the pressure is too low, the amount of gas molecules in the cavity is too small to impact the beam arm 301 by thermal motion, and the cantilever beam is bent; The pressure inside is large, the number of gas molecules in the cavity is large, and the beam arm 301 is subjected to more gas resistance and cannot be bent.
请参考图16,作为本发明的一个具体实施方式,还可以采用上述方法制造多个辐射计单元402,所述辐射计单元402呈阵列分布,入射光通过分光片501反射后,使可见光照射辐射计单元402,可以用于测量较大面积的辐射源403的辐射能量,辐射源403不同位置的辐射能量不同,相应的不同位置处的辐射计单元402接收到的辐射能量也不同,从而透过所述辐射计单元到达图像传感器401的光强也不 同,从而可以通过图像传感器401输出的电信号强度,判断辐射源403的形状,以及辐射能量的分布情况。进一步的,所述图像传感器401还可以根据接收到的光信号,对辐射源403成像。Referring to FIG. 16, as a specific embodiment of the present invention, a plurality of radiometer units 402 may be fabricated by the above method. The radiometer units 402 are distributed in an array, and the incident light is reflected by the beam splitter 501 to illuminate the visible light. The meter unit 402 can be used to measure the radiant energy of the radiation source 403 of a larger area. The radiant energy of the different positions of the radiation source 403 is different, and the radiant energy received by the radiometer unit 402 at the corresponding different positions is different, thereby transmitting The light intensity of the radiometer unit reaching the image sensor 401 is also not In the same way, the shape of the radiation source 403 and the distribution of the radiant energy can be determined by the electrical signal strength output by the image sensor 401. Further, the image sensor 401 can also image the radiation source 403 according to the received optical signal.
作为本发明的一个具体实施例,还可以在辐射计与辐射源之间设置透镜,从而对辐射源发出的红外光或微波等进行汇聚,使辐射计能够接收到辐射源各个位置发出的辐射能量,具体的所述透镜可以镶嵌在封装壳体的顶部。As a specific embodiment of the present invention, a lens may be disposed between the radiometer and the radiation source to concentrate the infrared light or the microwave emitted by the radiation source, so that the radiometer can receive the radiation energy emitted from each position of the radiation source. Specifically, the lens may be mounted on the top of the package housing.
本发明的具体实施方式还提供一种辐射计。A specific embodiment of the invention also provides a radiometer.
所述辐射计包括辐射计单元,请参考图10~图12为所述辐射计单元的示意图。The radiometer comprises a radiometer unit, please refer to FIG. 10 to FIG. 12 for a schematic diagram of the radiometer unit.
所述辐射计单元包括:衬底100,所述衬底100具有相对的第一表面100a和第二表面100b;位于衬底100第一表面100a一侧的第一凹槽101;悬梁300,所述悬梁300包括梁臂301和锚点302,所述梁臂301悬空于第一凹槽101上方,所述锚点302位于衬底100第一表面100a上;位于所述悬梁300一侧侧壁表面的吸收层304;位于所述衬底100的第二表面100b一侧的第二凹槽102,所述第一凹槽101与第二凹槽102贯通,所述第二凹槽102位于所述梁臂301正下方,且宽度小于或等于梁臂301的宽度。The radiometer unit includes: a substrate 100 having opposing first and second surfaces 100a and 100b; a first recess 101 on a side of the first surface 100a of the substrate 100; and a cantilever 300 The suspension beam 300 includes a beam arm 301 and an anchor point 302 suspended above the first groove 101, the anchor point 302 being located on the first surface 100a of the substrate 100; and a side wall of the cantilever beam 300 The surface of the absorption layer 304; the second groove 102 on the side of the second surface 100b of the substrate 100, the first groove 101 and the second groove 102 penetrate, the second groove 102 is located The beam arm 301 is directly below and has a width less than or equal to the width of the beam arm 301.
所述衬底100的材料包括硅、锗、锗化硅、砷化镓等半导体材料,所述半导体衬底100也可以是复合结构如绝缘体上硅等。本领域的技术人员可以根据衬底100上形成的器件选择所述衬底100的类型,因此所述衬底100的类型不应限制本发明的保护范围。本实施例中,所述衬底100的材料为单晶硅。The material of the substrate 100 includes semiconductor materials such as silicon, germanium, silicon germanium, gallium arsenide, etc., and the semiconductor substrate 100 may also be a composite structure such as silicon on insulator or the like. Those skilled in the art can select the type of the substrate 100 according to the device formed on the substrate 100, and thus the type of the substrate 100 should not limit the scope of protection of the present invention. In this embodiment, the material of the substrate 100 is monocrystalline silicon.
所述第一凹槽101平行于第一表面100a的截面图形为半圆形。在本发明的其他实施例中,所述第一凹槽101平行于第一表面100a 的截面还可以是正方形、矩形或扇形。The cross-sectional pattern of the first groove 101 parallel to the first surface 100a is semi-circular. In other embodiments of the invention, the first groove 101 is parallel to the first surface 100a The cross section can also be square, rectangular or fan shaped.
作为本发明的一个具体实施方式,所述悬梁300为长条形,梁臂301的宽度与锚点302的宽度一致。在本发明的其他实施方式中,所述锚点302的宽度还可以大于所述梁臂301的宽度,提高所述悬梁300的稳固性。如果所述梁臂301的宽度过小,则后续在测量热辐射的过程中,梁臂301容易发生不可恢复的形变;如果梁臂301的宽度过大,则后续在测量热辐射的过程中,梁臂301不易发生弯曲,导致测量误差较大。作为本发明的一个具体实施方式,所述梁臂301的宽度为0.5μm~10μm,以使得所述梁臂301既不易发生不可恢复的形变,又能及时产生弯曲。As a specific embodiment of the present invention, the cantilever beam 300 is elongated, and the width of the beam arm 301 is consistent with the width of the anchor point 302. In other embodiments of the present invention, the width of the anchor point 302 may also be greater than the width of the beam arm 301 to improve the stability of the cantilever beam 300. If the width of the beam arm 301 is too small, the beam arm 301 is prone to irreversible deformation during the measurement of the heat radiation; if the width of the beam arm 301 is too large, then in the process of measuring the heat radiation, The beam arm 301 is less prone to bending, resulting in a large measurement error. As a specific embodiment of the present invention, the width of the beam arm 301 is 0.5 μm to 10 μm, so that the beam arm 301 is not easy to undergo irreversible deformation, and can be bent in time.
所述梁臂301的长度略小于第一凹槽101截面的半径,使得悬梁201在第一凹槽101上方能够完全悬空。The length of the beam arm 301 is slightly smaller than the radius of the cross section of the first groove 101 such that the cantilever beam 201 can be completely suspended above the first groove 101.
所述悬梁300的材料为导热性能较低,具有较高隔热性能的材料。作为本发明的一个具体实施方式,所述悬梁300的处理为多晶硅。在本发明的其他实施方式中,所述悬梁300的材料还可以是金属,例如铝、镍或铁等。The material of the cantilever beam 300 is a material having low thermal conductivity and high thermal insulation performance. As a specific embodiment of the present invention, the treatment of the cantilever beam 300 is polysilicon. In other embodiments of the present invention, the material of the cantilever beam 300 may also be a metal such as aluminum, nickel or iron.
所述辐射计单元还包括挡块303,所述挡块303部分位于衬底100第一表面100a,部分悬空。作为一个具体实施方式,所述挡块303数量为两个,分别位于梁臂301的两侧,用于阻挡梁臂301发生过度弯曲。所述挡块303的材料与梁臂301的悬梁一致。可以提前设定梁臂301的弯曲方向,在梁臂301弯曲方向上的挡块与梁臂301之间的距离较大,以提供足够的空间使得悬梁发生弯曲。The radiometer unit further includes a stop 303 that is partially located on the first surface 100a of the substrate 100 and partially suspended. As a specific embodiment, the number of the stoppers 303 is two, which are respectively located at two sides of the beam arm 301 for blocking the excessive bending of the beam arm 301. The material of the stopper 303 coincides with the cantilever of the beam arm 301. The bending direction of the beam arm 301 can be set in advance, and the distance between the stopper in the bending direction of the beam arm 301 and the beam arm 301 is large to provide sufficient space for the cantilever to bend.
所述吸收层304对光和热辐射具有较高吸收能力,一般为黑色物质,具体的可以包无定型碳、铬或锰等材料。The absorbing layer 304 has a high absorption capacity for light and heat radiation, and is generally a black substance, and specifically may contain amorphous carbon, chromium or manganese.
具体的,所述吸收层304位于梁臂301的弯曲方向相对的侧壁上, 即后续所述梁臂301将从形成有吸收层304的一侧向另一侧发生弯曲。这是由于在测量辐射过程中,吸收层304一侧将会吸收较多的热量,使吸收层304附近的气体分子热运动加剧,撞击所述梁臂301,使得梁臂301向另一侧发生弯曲。Specifically, the absorbing layer 304 is located on a side wall of the beam arm 301 opposite to the bending direction, That is, the beam arm 301 will be bent from the side on which the absorption layer 304 is formed to the other side. This is because during the measurement of the radiation, the side of the absorption layer 304 will absorb more heat, causing the thermal motion of the gas molecules near the absorption layer 304 to be intensified, striking the beam arm 301, causing the beam arm 301 to occur to the other side. bending.
所述吸收层304需要具有足够的厚度,能够在短时间内吸收足够的热量,使梁臂301发生弯曲;同时又要避免所述吸收层304的厚度过大,导致悬梁304发生弯曲需要的应力较大,而不易对较低能量的辐射进行测量。在本发明的一个具体实施方式中,所述吸收层304的厚度为10nm~1μm。The absorbing layer 304 needs to have sufficient thickness to absorb sufficient heat in a short time to bend the beam arm 301; at the same time, to avoid excessive stress of the absorbing layer 304, resulting in stress required for the cantilever beam 304 to bend. Larger, less easily measured for lower energy radiation. In a specific embodiment of the present invention, the thickness of the absorbing layer 304 is 10 nm to 1 μm.
所述第二凹槽102与第一凹槽101贯通,所述第二凹槽102位于梁臂301正下方,且宽度小于或等于梁臂301的宽度,从而使得梁臂301能够将第二凹槽102完全遮挡。图10为第二表面100b的俯视示意图。The second groove 102 penetrates the first groove 101, and the second groove 102 is located directly below the beam arm 301, and the width is less than or equal to the width of the beam arm 301, so that the beam arm 301 can be the second concave The slot 102 is completely obscured. Figure 10 is a top plan view of the second surface 100b.
所述梁臂301在接受辐射源照射时,梁臂301侧壁的吸收层304接收辐射源能量,温度升高,而梁臂301本身的导热性能较差,温度较低。吸收层304周围的气体分子受热,运动加剧,撞击吸收层304,使得梁臂301向与吸收层304相对的另一侧发生弯曲,暴露出第二凹槽102,使得可见光能够透过所述第二凹槽102,请参考图13。所述辐射源光能量越大,梁臂301弯曲程度越大,暴露出的第二凹槽102的面积越大。When the beam arm 301 is irradiated by the radiation source, the absorption layer 304 of the sidewall of the beam arm 301 receives the radiation source energy, the temperature rises, and the beam arm 301 itself has poor thermal conductivity and low temperature. The gas molecules around the absorbing layer 304 are heated and the movement is intensified, striking the absorbing layer 304, causing the beam arm 301 to bend toward the other side opposite to the absorbing layer 304, exposing the second groove 102, so that visible light can pass through the first For the two grooves 102, please refer to FIG. The greater the light energy of the radiation source, the greater the degree of bending of the beam arm 301, and the larger the area of the exposed second groove 102.
请参考图14作为本发明的一个具体实施方式,所述衬底100第二表面100b设置于图像传感器400上方,所述第二凹槽102位于图像传感器400的感光区域上方。Referring to FIG. 14 as a specific embodiment of the present invention, the second surface 100b of the substrate 100 is disposed above the image sensor 400, and the second groove 102 is located above the photosensitive area of the image sensor 400.
所述图像传感器400可以是CMOS图像传感器或CCD图像传感器。 The image sensor 400 may be a CMOS image sensor or a CCD image sensor.
所述第二凹槽102位于图像传感器400的感光区域上方,透过第二凹槽102的可见光照射到图像传感器400的感光区域上方,通过图像传感器400将光信号转换成电信号,从而可以通过电信号大小衡量可见光强度大小。辐射计接收到的辐射能量越大,梁臂301弯曲程度越大,暴露出第二凹槽102越大,从而透过所述第二凹槽102到达图像传感器400的光强越大,所述图像传感器400输出的电信号越大。The second groove 102 is located above the photosensitive area of the image sensor 400, and the visible light transmitted through the second groove 102 is irradiated onto the photosensitive area of the image sensor 400, and the optical signal is converted into an electrical signal by the image sensor 400, thereby The electrical signal size measures the amount of visible light intensity. The greater the radiant energy received by the radiometer, the greater the degree of bending of the beam arm 301, the greater the exposure of the second recess 102, such that the greater the intensity of light reaching the image sensor 400 through the second recess 102, The electrical signal output by the image sensor 400 is larger.
请参考图15,还包括设置于在衬底100的第一表面100a上方的分光片500,用于反射可见光。Referring to FIG. 15, a beam splitter 500 disposed over the first surface 100a of the substrate 100 is further included for reflecting visible light.
所述分光片500可以透过红外光,而对可见光进行全反射,从而可以对入射光进行过滤,仅有可见光进入辐射计,避免红外光对测量结果产生影响。The beam splitter 500 can transmit infrared light and totally reflect the visible light, so that the incident light can be filtered, and only visible light enters the radiometer to prevent the infrared light from affecting the measurement result.
作为本发明的一个具体实施例,所述分光片500与衬底第一表面100a之间呈45°夹角,使得水平入射的光线,能够垂直照射所述梁臂301所在位置。As a specific embodiment of the present invention, the beam splitter 500 is at an angle of 45° with the first surface 100a of the substrate, so that the horizontally incident light can vertically illuminate the position of the beam arm 301.
当所述辐射计没有接受到辐射时,梁臂301遮挡第二凹槽102,入射光被阻挡,无法进入第二凹槽102;当所述辐射计接受到辐射时,梁臂301发生弯曲,暴露出第二凹槽102,入射光透过第二凹槽102,照射到图像传感器400上(请参考图15)。When the radiometer does not receive the radiation, the beam arm 301 blocks the second groove 102, the incident light is blocked from entering the second groove 102; when the radiometer receives the radiation, the beam arm 301 is bent. The second groove 102 is exposed, and the incident light is transmitted through the second groove 102 to the image sensor 400 (refer to FIG. 15).
作为本发明的一个具体实施方式,所述辐射计还包括封装壳体,所述衬底100位于封装壳体内,所述封装壳体内的压强为0.1Pa~100Pa,既使得封装壳体内有足够的气体分子,能够通过热运动撞击梁臂301,使梁臂301弯曲;又避免气体分子数量过多,使梁臂301会受到较多的气体阻力,无法发生弯曲。As a specific embodiment of the present invention, the radiometer further includes a package housing, and the substrate 100 is located in the package housing, and the pressure in the package housing is 0.1 Pa to 100 Pa, so that there is sufficient inside the package housing. The gas molecules can impact the beam arm 301 by thermal motion to bend the beam arm 301; and avoid excessive amounts of gas molecules, so that the beam arm 301 is subjected to more gas resistance and cannot be bent.
请参考图16,作为本发明的一个具体实施方式,所述辐射计还包括多个辐射单元402,所述辐射计单元402呈阵列分布,入射光通 过分光片501反射后,使可见光照射辐射计单元402,可以用于测量较大面积的辐射源403的辐射能量,所述分光片501也可以是一个完整的分光片。辐射源403不同位置的辐射能量不同,相应的不同位置处的辐射计单元接收到的辐射能量也不同,从而透过所述辐射计单元到达图像传感器401的光强也不同,从而可以通过图像传感器401输出的电信号强度,判断辐射源403的形状,以及辐射能量的分布情况。进一步的,所述图像传感器401还可以根据接收到的光信号,对辐射源403成像。Referring to FIG. 16, as a specific embodiment of the present invention, the radiometer further includes a plurality of radiating units 402, and the radiometer units 402 are arranged in an array, and the incident light is transmitted. After being reflected by the optical splitter 501, the visible light is irradiated to the radiometer unit 402, which can be used to measure the radiant energy of the radiation source 403 of a large area. The splitter 501 can also be a complete beam splitter. The radiation energy of different positions of the radiation source 403 is different, and the radiation energy received by the radiometer unit at the corresponding different positions is also different, so that the light intensity reaching the image sensor 401 through the radiometer unit is also different, so that the image sensor can pass through the image sensor. The electrical signal strength output by 401 determines the shape of the radiation source 403 and the distribution of the radiant energy. Further, the image sensor 401 can also image the radiation source 403 according to the received optical signal.
作为本发明的一个具体实施例,辐射计与辐射源403之间还设置有透镜,从而对辐射源403发出的红外光或微波等进行汇聚,使辐射计能够接收到辐射源403各个位置发出的辐射能量。所述透镜可以镶嵌在封装壳体的顶部。As a specific embodiment of the present invention, a lens is disposed between the radiometer and the radiation source 403 to converge the infrared light or microwave emitted by the radiation source 403, so that the radiometer can receive the position of the radiation source 403. Radiation energy. The lens can be mounted on top of the package housing.
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。 The above description is only a preferred embodiment of the present invention, and it should be noted that those skilled in the art can also make several improvements and retouchings without departing from the principles of the present invention. These improvements and retouchings should also be considered. It is the scope of protection of the present invention.

Claims (15)

  1. 一种辐射计,其特征在于,包括:辐射计单元,所述辐射计单元包括:A radiometer characterized by comprising: a radiometer unit, the radiometer unit comprising:
    衬底,所述衬底具有相对的第一表面和第二表面;a substrate having opposing first and second surfaces;
    位于衬底第一表面一侧的第一凹槽;a first groove on a side of the first surface of the substrate;
    悬梁,所述悬梁包括梁臂和锚点,所述梁臂悬空于第一凹槽上方,所述锚点位于衬底第一表面上;a suspension beam comprising a beam arm and an anchor point, the beam arm being suspended above the first groove, the anchor point being located on the first surface of the substrate;
    位于所述梁臂一侧侧壁表面的吸收层;An absorbing layer on a side wall of one side of the beam arm;
    位于所述衬底第二表面一侧的第二凹槽,所述第一凹槽与第二凹槽贯通,所述第二凹槽位于所述梁臂的纵向投影内。a second groove on a side of the second surface of the substrate, the first groove being continuous with the second groove, the second groove being located within a longitudinal projection of the beam arm.
  2. 根据权利要求1所述的辐射计,其特征在于,所述辐射计单元还包括两个挡块,所述两个挡块分别位于梁臂的两侧,所述挡块部分位于衬底第一表面,部分位于牺牲层表面。The radiometer according to claim 1, wherein said radiometer unit further comprises two stoppers, said two stoppers being respectively located on both sides of the beam arm, said stopper portion being located on the substrate first The surface is partially on the surface of the sacrificial layer.
  3. 根据权利要求1所述的辐射计,其特征在于,所述第一凹槽平行于衬底第一表面的截面图形为半圆形、正方形、矩形或扇形。The radiometer according to claim 1, wherein the cross-sectional pattern of the first groove parallel to the first surface of the substrate is semicircular, square, rectangular or fan-shaped.
  4. 根据权利要求1所述的辐射计,其特征在于,所述梁臂的宽度为0.5μm~10μm。The radiometer according to claim 1, wherein the beam arm has a width of 0.5 μm to 10 μm.
  5. 根据权利要求1所述的辐射计,其特征在于,所述吸收层的厚度为10nm~1μm。The radiometer according to claim 1, wherein the absorbing layer has a thickness of 10 nm to 1 μm.
  6. 根据权利要求5所述的辐射计,其特征在于,所述吸收层的材料包括无定型碳、铬或锰。The radiometer according to claim 5, wherein the material of the absorbing layer comprises amorphous carbon, chromium or manganese.
  7. 根据权利要求1所述的辐射计,其特征在于,所述衬底第二表面设置于图像传感器上方,所述第二凹槽位于图像传感器的感光区域上方。 The radiometer of claim 1 wherein said second surface of said substrate is disposed above said image sensor and said second recess is located above said photosensitive area of said image sensor.
  8. 根据权利要求1所述的辐射计,其特征在于,还包括:设置于衬底的第一表面上方的分光片,用于反射可见光。The radiometer of claim 1 further comprising: a beam splitter disposed over the first surface of the substrate for reflecting visible light.
  9. 根据权利要求8所述的辐射计,其特征在于,所述分光片与衬底的第一表面之间呈45°夹角。The radiometer according to claim 8, wherein said beam splitter has an angle of 45 with respect to the first surface of the substrate.
  10. 根据权利要求1所述的辐射计,其特征在于,还包括封装壳体,所述衬底位于封装壳体内,所述封装壳体内的压强为0.1Pa~100Pa。The radiometer of claim 1 further comprising a package housing, said substrate being located within the package housing, said pressure within said package housing being between 0.1 Pa and 100 Pa.
  11. 根据权利要求1所述的辐射计,其特征在于,还包括镶嵌于封装壳体顶部的透镜。The radiometer of claim 1 further comprising a lens mounted on top of the package housing.
  12. 根据权利要求1所述的辐射计,其特征在于,包括多个辐射计单元,所述多个辐射计单元呈阵列分布。The radiometer of claim 1 including a plurality of radiometer units, said plurality of radiometer units being arranged in an array.
  13. 一种辐射计的制造方法,其特征在于,包括:A method of manufacturing a radiometer, comprising:
    提供衬底,所述衬底具有相对的第一表面和第二表面;Providing a substrate having opposing first and second surfaces;
    从第一表面刻蚀所述衬底,在所述衬底内形成第一凹槽;Etching the substrate from a first surface, forming a first recess in the substrate;
    在所述第一凹槽内形成牺牲层,所述牺牲层表面与衬底第一表面齐平;Forming a sacrificial layer in the first recess, the surface of the sacrificial layer being flush with the first surface of the substrate;
    形成悬梁,所述悬梁包括梁臂和锚点,所述梁臂位于牺牲层表面,所述锚点位于衬底第一表面上;Forming a cantilever beam, the cantilever beam comprising a beam arm and an anchor point, the beam arm being located on a surface of the sacrificial layer, the anchor point being located on the first surface of the substrate;
    在所述梁臂一侧侧壁表面形成吸收层;Forming an absorbing layer on a side wall of one side of the beam arm;
    从第二表面刻蚀所述衬底,在所述衬底内形成第二凹槽,所述第一凹槽与第二凹槽贯通,所述第二凹槽位于梁臂的正向投影内;Etching the substrate from a second surface, forming a second recess in the substrate, the first recess being penetrated by a second recess, the second recess being located within a forward projection of the beam arm ;
    去除所述牺牲层,使所述梁臂悬空。The sacrificial layer is removed to suspend the beam arms.
  14. 根据权利要求13所述辐射计的制造方法,其特征在于,所述悬梁的形成方法包括:在所述衬底第一表面和牺牲层表面形成悬梁材料层;对所述悬梁材料层进行图形化,形成所述悬梁。 The method of manufacturing a radiometer according to claim 13, wherein the method of forming the cantilever beam comprises: forming a layer of a cantilever material on the first surface of the substrate and the surface of the sacrificial layer; and patterning the layer of the cantilever material Forming the cantilever beam.
  15. 根据权利要求14所述的辐射计的制造方法,其特征在于,对所述悬梁材料层进行图形化形成悬梁的同时,形成两个挡块,所述挡块部分位于衬底第一表面上,部分位于牺牲层表面,所述两个挡块分别位于梁臂的两侧。 The method of manufacturing a radiometer according to claim 14, wherein the cantilever material layer is patterned to form a cantilever beam, and two stoppers are formed, the stopper portion being located on the first surface of the substrate, Partially located on the surface of the sacrificial layer, the two stops are respectively located on both sides of the beam arm.
PCT/CN2017/079047 2016-06-07 2017-03-31 Radiometer and manufacturing method thereof WO2017211110A1 (en)

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