WO2017206213A1 - Oled器件与oled显示器 - Google Patents

Oled器件与oled显示器 Download PDF

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Publication number
WO2017206213A1
WO2017206213A1 PCT/CN2016/086713 CN2016086713W WO2017206213A1 WO 2017206213 A1 WO2017206213 A1 WO 2017206213A1 CN 2016086713 W CN2016086713 W CN 2016086713W WO 2017206213 A1 WO2017206213 A1 WO 2017206213A1
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layer
thickness
alloy
electron
tantalum alloy
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French (fr)
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李先杰
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80517—Multilayers, e.g. transparent multilayers

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED device and an OLED display.
  • An OLED (Organic Light-Emitting Diode) display also known as an organic electroluminescent display, is an emerging flat panel display device because of its simple preparation process, low cost, low power consumption, and high luminance.
  • the working temperature has wide adaptability, light volume, fast response, easy to realize color display and large screen display, easy to realize integration with integrated circuit driver, easy to realize flexible display, and the like, and thus has broad application prospects.
  • OLED can be divided into two types: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED), namely direct addressing and thin film transistor matrix addressing.
  • PMOLED passive matrix OLED
  • AMOLED active matrix OLED
  • the AMOLED has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used as a high-definition large-sized display device.
  • the large-size AMOLED display mass production technology adopts a white organic light-emitting diode (WOLED) plus a color filter (CF), and the principle is that the white light emitted by the WOLED passes through the color filter. After filtering out the red, green and blue primary colors.
  • WOLED white organic light-emitting diode
  • CF color filter
  • FIG. 1 is a schematic structural view of a conventional ordinary blue OLED device, which includes the bottom-up order.
  • the transmission layer 600 constitutes a blue light emitting unit. Since the blue OLED device has only one blue light emitting unit, the light emitting intensity is low, so that the display effect of the OLED display is poor.
  • the object of the present invention is to provide an OLED display comprising the above OLED device, which can improve the luminous intensity, facilitate the excitation of the color conversion film to emit red and green light, obtain high color saturation of red, green and blue primary color lights, and improve the OLED display.
  • the color gamut while helping to improve the resolution of OLED displays.
  • the present invention first provides an OLED device including an anode, a hole injection layer, a hole transport layer, a first light emitting unit, a charge generating layer, a second light emitting unit, and a cathode which are disposed in this order from bottom to top.
  • the anode is a translucent electrode;
  • the first light emitting unit includes a first electron blocking layer, a first light emitting layer, and a first electron transport layer disposed in order from bottom to top
  • the second light emitting unit includes a second electronic block disposed in order from bottom to top a layer, a second luminescent layer, and a second electron transport layer;
  • the charge generation layer includes an electron generation layer and a hole generation layer which are disposed in this order from bottom to top.
  • the first luminescent layer and the second luminescent layer are both blue luminescent layers, and the material of the blue luminescent layer comprises 4,4′-bis(2,2)-distyryl-1,1 biphenyl;
  • the thickness of the first light-emitting layer is 5 nm to 40 nm; and the thickness of the second light-emitting layer is 5 nm to 40 nm.
  • the anode includes two transparent conductive metal oxide layers and a metal layer between the two transparent conductive metal oxide layers; the transparent conductive metal oxide layer has a thickness of 5 nm to 50 nm; and the metal layer has a thickness of 5 nm. ⁇ 25nm;
  • the cathode is a reflective electrode, and the material of the cathode includes lithium, a lithium alloy, a magnesium alloy, a calcium alloy, a calcium alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a combination of one or more of niobium alloy, aluminum, aluminum alloy, niobium, tantalum alloy, niobium, and niobium alloy; the cathode has a thickness of 50 nm to 1000 nm.
  • the material of the electron generating layer includes hexaonitrile hexaazatriphenylene; the material of the hole generating layer includes N,N'-diphenyl-N,N'-(1-naphthyl)-1,1 '-biphenyl-4,4'-diamine; the electron-generating layer has a film thickness of 5 nm to 50 nm; and the hole-generating layer has a film thickness of 5 nm to 50 nm.
  • the material of the hole injection layer includes hexaonitrile hexaazatriphenylene; the hole injection layer has a thickness of 5 nm to 500 nm;
  • the material of the hole transport layer comprises N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine;
  • the thickness of the transport layer is 5 nm to 500 nm;
  • the materials of the first electron blocking layer and the second electron blocking layer each comprise 4,4',4"-tris(carbazol-9-yl)triphenylamine; the first electron blocking layer and the second electron blocking layer The thickness is 5nm ⁇ 30nm;
  • the first electron transport layer comprises two structural layers arranged in an overlapping manner, wherein the material of one structural layer comprises 4,7-diphenyl-1,10-phenanthroline, and the material of the other structural layer comprises 4,7-two Phenyl-1,10-phenanthrenequinone a mixture of a porphyrin and lithium; the first electron transport layer has a thickness of 5 nm to 50 nm;
  • the material of the second electron transport layer includes 4,7-diphenyl-1,10-phenanthroline; the thickness of the second electron transport layer is 5 nm to 50 nm.
  • the present invention also provides an OLED display, comprising a TFT substrate, a color conversion film disposed on the TFT substrate, a flat layer disposed on the color conversion film, and an OLED device disposed on the planar layer. a package cover plate over the OLED device, and a package adhesive material disposed between the package cover plate and the OLED device;
  • the OLED device includes an anode, a hole injection layer, a hole transport layer, a first light emitting unit, a charge generating layer, a second light emitting unit, and a cathode disposed in order from bottom to top; the anode is a translucent electrode;
  • the first light emitting unit includes a first electron blocking layer, a first light emitting layer, and a first electron transport layer disposed in order from bottom to top
  • the second light emitting unit includes a second electronic block disposed in order from bottom to top a layer, a second luminescent layer, and a second electron transport layer
  • the first luminescent layer and the second luminescent layer are both blue luminescent layers
  • the charge generating layer includes an electron generating layer and a hole disposed in order from bottom to top Generating layer
  • the color conversion film includes a red pixel unit, a green pixel unit, and a blue pixel unit, the red pixel unit is a red conversion film, the green pixel unit is a green conversion film, and the blue pixel unit is colorless and transparent. Film or through hole;
  • the OLED device After applying a voltage, the OLED device emits blue light, and the blue light enters the color conversion film through the anode of the OLED device, exciting the red conversion film constituting the red pixel unit to emit red light, and exciting the green color constituting the green pixel unit.
  • the conversion film emits green light, and passes through a colorless transparent film or a through hole constituting the blue pixel unit to emit blue light, thereby realizing display of three primary colors of red, green and blue.
  • the material of the blue light emitting layer comprises 4,4′-bis(2,2)-distyryl-1,1 biphenyl; the first light emitting layer has a thickness of 5 nm to 40 nm; and the second light emitting layer The thickness is 5 nm to 40 nm.
  • the anode includes two transparent conductive metal oxide layers and a metal layer between the two transparent conductive metal oxide layers; the transparent conductive metal oxide layer has a thickness of 5 nm to 50 nm; and the metal layer has a thickness of 5 nm. ⁇ 25nm;
  • the cathode is a reflective electrode, and the material of the cathode includes lithium, a lithium alloy, a magnesium alloy, a calcium alloy, a calcium alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a combination of one or more of niobium alloy, aluminum, aluminum alloy, niobium, tantalum alloy, niobium, and niobium alloy; the cathode has a thickness of 50 nm to 1000 nm.
  • the material of the electron generating layer includes hexaonitrile hexaazatriphenylene; the material of the hole generating layer includes N,N'-diphenyl-N,N'-(1-naphthyl)-1,1 '-biphenyl-4,4'-diamine; film of the electron generating layer
  • the thickness is 5 nm to 50 nm; and the thickness of the hole generating layer is 5 nm to 50 nm.
  • the material of the hole injection layer includes hexaonitrile hexaazatriphenylene; the hole injection layer has a thickness of 5 nm to 500 nm;
  • the material of the hole transport layer comprises N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine;
  • the thickness of the transport layer is 5 nm to 500 nm;
  • the materials of the first electron blocking layer and the second electron blocking layer each comprise 4,4',4"-tris(carbazol-9-yl)triphenylamine; the first electron blocking layer and the second electron blocking layer The thickness is 5nm ⁇ 30nm;
  • the first electron transport layer comprises two structural layers arranged in an overlapping manner, wherein the material of one structural layer comprises 4,7-diphenyl-1,10-phenanthroline, and the material of the other structural layer comprises 4,7-two a mixture of phenyl-1,10-phenanthroline and lithium; the first electron transport layer has a thickness of 5 nm to 50 nm;
  • the material of the second electron transport layer comprises 4,7-diphenyl-1,10-phenanthroline; the thickness of the second electron transport layer is 5 nm to 50 nm;
  • the material of the red conversion film includes a red quantum dot
  • the material of the green conversion film includes a green quantum dot
  • the red conversion film has a thickness of 10 nm to 200 nm
  • the green conversion film has a thickness of 10 nm to 200 nm.
  • the present invention also provides an OLED device comprising an anode, a hole injection layer, a hole transport layer, a first light emitting unit, a charge generating layer, a second light emitting unit, and a cathode disposed in order from bottom to top; Translucent electrode;
  • the first light emitting unit includes a first electron blocking layer, a first light emitting layer, and a first electron transport layer disposed in order from bottom to top
  • the second light emitting unit includes a second electronic block disposed in order from bottom to top a layer, a second luminescent layer, and a second electron transport layer
  • the charge generating layer includes an electron generating layer and a hole generating layer disposed in order from bottom to top
  • the first luminescent layer and the second luminescent layer are both blue luminescent layers, and the material of the blue luminescent layer comprises 4,4′-bis(2,2)-distyryl-1,1 biphenyl;
  • the thickness of the first luminescent layer is 5 nm to 40 nm; the thickness of the second luminescent layer is 5 nm to 40 nm;
  • the anode comprises two transparent conductive metal oxide layers and a metal layer between the two transparent conductive metal oxide layers;
  • the transparent conductive metal oxide layer has a thickness of 5 nm to 50 nm; the thickness of the metal layer 5 nm to 25 nm;
  • the cathode is a reflective electrode, and the material of the cathode includes lithium, a lithium alloy, a magnesium alloy, a calcium alloy, a calcium alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a combination of one or more of niobium alloy, aluminum, aluminum alloy, niobium, tantalum alloy, niobium, and niobium alloy; the cathode has a thickness of 50 nm to 1000 nm.
  • the present invention provides an OLED device by using two or More illuminating units are connected in series, which can multiply the illuminating intensity of the OLED device; at the same time, by using a translucent anode, a microcavity effect can be introduced, the luminescence spectrum is narrowed, the light color is more pure, and the luminescence intensity is further improved.
  • An OLED display provided by the present invention comprises the above OLED device, which increases the luminescence intensity by connecting two or more illuminating units in series; and by using a translucent anode, a microcavity effect can be introduced to change the luminescence spectrum.
  • Narrow light color is more pure and further enhances the luminous intensity, which is beneficial to stimulate the color conversion film to emit red and green light, obtain red, green and blue primary color light with high color saturation, and improve the color gamut of the OLED display;
  • the green and blue pixel light-emitting layers are all blue light-emitting layers, thereby avoiding the use of a precision metal mask, which is advantageous for improving the resolution of the OLED display.
  • FIG. 1 is a schematic structural view of a conventional conventional blue OLED device
  • FIG. 2 is a schematic structural view of an OLED device of the present invention
  • 3 is a schematic view showing the comparison of the luminous intensity of the high-brightness blue OLED device of the present invention and the conventional ordinary blue OLED device;
  • FIG. 4 is a schematic structural view of an OLED display of the present invention.
  • FIG. 5 is a spectrum diagram of red, green and blue primary colors emitted by the OLED display of the present invention.
  • the present invention firstly provides an OLED device 120 including an anode 10, a hole injection layer 20, a hole transport layer 30, a first light emitting unit 40, a charge generating layer 50, and a second layer disposed in order from bottom to top. a second light emitting unit 60, and a cathode 70; the anode 10 is a translucent electrode;
  • the first light emitting unit 40 includes a first electron blocking layer 41, a first light emitting layer 42, and a first electron transporting layer 43 disposed in order from bottom to top; and the second light emitting unit 60 includes sequentially arranged from bottom to top.
  • the charge generating layer 50 includes an electron generating layer 51 and a hole generating layer 52 which are disposed in this order from bottom to top.
  • the charge generating layer 50 is configured to supply the first light emitting unit 40 and the second light emitting unit 60 with electrons or holes required for their light emission, respectively, such that the first light emitting unit 40 is at the charge generating layer 50 and the anode 10
  • the light is emitted, and the second light emitting unit 60 emits light under the action of the charge generating layer 50 and the cathode 70. That is, the charge generating layer 50 connects the first light emitting unit 40 and the second light emitting unit 60 in series between the anode 10 and the cathode 70, thereby realizing the structure of the tandem organic light emitting diode, and the luminous efficiency can be increased.
  • the anode 10 is used to inject holes into the hole injection layer 20.
  • the anode 10 includes two transparent conductive metal oxide layers and a metal layer between the two transparent conductive metal oxide layers.
  • the material of the transparent conductive metal oxide layer is preferably indium tin oxide; the material of the metal layer may be silver or aluminum.
  • the transparent conductive metal oxide layer has a thickness of 5 nm to 50 nm, and the metal layer has a thickness of 5 nm to 25 nm.
  • the transparent conductive metal oxide layer has a thickness of 15 nm, and the metal layer has a thickness of 15 nm.
  • the hole injection layer 20 is for injecting holes from the anode 10 into the hole transport layer 30.
  • the material of the hole injection layer 20 includes Hexanitrile hexaazatriphenylene (HATCN), and the structural formula of the hexaonitrile hexaazatriphenylene is
  • the hole injection layer 20 has a thickness of 5 nm to 500 nm, preferably 10 nm.
  • the hole transport layer 30 is used to transport holes into the first electron blocking layer 41 of the first light emitting unit 40.
  • the material of the hole transport layer 30 comprises N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine ( N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine, NPB), the N,N'-diphenyl-N,N'-(1-naphthyl) -1,1'-biphenyl-4,4'-diamine has the structural formula
  • the hole transport layer 30 has a thickness of 5 nm to 500 nm, preferably 60 nm.
  • the first electron blocking layer 41 and the second electron blocking layer 61 are respectively used for electricity Sub-portions are confined in the first luminescent layer 42 and the second luminescent layer 62, and holes are transported into the first luminescent layer 42 and the second luminescent layer 62.
  • the materials of the first electron blocking layer 41 and the second electron blocking layer 61 each include 4,4′,4′′-tris(carbazol-9-yl)triphenylamine (4,4′,4′′- Tris(N-carbazolyl)triphenylamine, TCTA), the structural formula of the 4,4',4"-tris(carbazol-9-yl)triphenylamine is
  • the first electron blocking layer 41 has a thickness of 5 nm to 30 nm, preferably 10 nm; and the second electron blocking layer 61 has a thickness of 5 nm to 30 nm, preferably 10 nm.
  • the first luminescent layer 42 and the second luminescent layer 62 are used to compositely emit holes and electrons in the luminescent layer.
  • the first luminescent layer 42 and the second luminescent layer 62 are both blue luminescent layers, and the material of the blue luminescent layer comprises 4,4′-bis(2,2)-distyryl-1,1 Biphenyl (4,4'-Bis(2,2-diphenylvinyl)-1,10-biphenyl, DPVBi), the 4,4'-bis(2,2)-distyryl-1,1 biphenyl
  • the material of the blue luminescent layer comprises 4,4′-bis(2,2)-distyryl-1,1 Biphenyl (4,4'-Bis(2,2-diphenylvinyl)-1,10-biphenyl, DPVBi), the 4,4'-bis(2,2)-distyryl-1,1 biphenyl
  • the first light-emitting layer 42 has a thickness of 5 nm to 40 nm, preferably 25 nm; and the second light-emitting layer 62 has a thickness of 5 nm to 40 nm, preferably 25 nm.
  • the first electron transport layer 43 is for transferring electrons injected from the charge generating layer 50 into the first light emitting layer 42
  • the second electron transport layer 63 is for transferring electrons injected from the cathode 70 to In the second luminescent layer 62.
  • the first electron transport layer 43 has a thickness of 5 nm to 50 nm, preferably 20 nm.
  • the first electron transport layer 43 comprises two structural layers arranged in an overlapping manner, wherein the material of a structural layer comprises 4,7-diphenyl-1,10-phenanthroline (4,7-diphenyl-1, 10-phenanthroline, Bphen), the material of another structural layer comprises a mixture of 4,7-diphenyl-1,10-phenanthroline (Bphen) and lithium (Li), both of which have a thickness of preferably 10 nm. .
  • the structural formula of the 4,7-diphenyl-1,10-phenanthroline is
  • the second electron transport layer 63 has a thickness of 5 nm to 50 nm, preferably 20 nm.
  • the material of the second electron transport layer 63 includes 4,7-diphenyl-1,10-phenanthroline (Bphen).
  • the electron generating layer 51 is for generating electrons and injecting electrons into the first electron transport layer 43 of the first light emitting unit 40
  • the hole generating layer 52 for generating holes and holes It is injected into the second electron blocking layer 61 of the second light emitting unit 60.
  • the material of the electron generating layer 51 includes hexaonitrile hexaazatriphenylene (HATCN); the material of the hole generating layer 52 includes N,N'-diphenyl-N,N'-(1 -Naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB).
  • HTCN hexaonitrile hexaazatriphenylene
  • NPB N,N'-diphenyl-N,N'-(1 -Naphthyl)-1,1'-biphenyl-4,4'-diamine
  • the film thickness of the electron generating layer 51 is 5 nm to 50 nm, and the film thickness of the hole generating layer 52 is 5 nm to 50 nm.
  • the film thickness of the electron generating layer 51 is 10 nm.
  • the film thickness of the hole generating layer 52 was 10 nm.
  • the cathode 70 is used to inject electrons into the second electron transport layer 63.
  • the cathode 70 is a reflective electrode.
  • the material of the cathode 70 is usually a low work function metal material, such as lithium (Li), lithium alloy, magnesium (Mg), magnesium alloy, calcium (Ca), calcium alloy, strontium (Sr), bismuth alloy. , lanthanum (La), lanthanum alloy, cerium (Ce), cerium alloy, lanthanum (Eu), yttrium alloy, yttrium (Yb), yttrium alloy, aluminum (Al), aluminum alloy, lanthanum (Cs), yttrium alloy, yttrium A combination of one or more of (Rb), and bismuth alloy.
  • the cathode 70 has a thickness of 50 nm to 1000 nm.
  • the cathode 70 is a composite film composed of a 1 nm lithium fluoride (LiF) layer and a 100 nm aluminum layer.
  • LiF lithium fluoride
  • the cathode 70 is formed into a film by a vacuum evaporation method.
  • the OLED device of the present invention has a higher luminous intensity relative to the ordinary blue OLED device having only a single light emitting unit of FIG. 1, when the first light emitting layer 42
  • the OLED device of the present invention constitutes a high-brightness blue OLED device, and the high-brightness blue OLED device of the present invention and the ordinary blue OLED shown in FIG. 1 are formed at the same current density.
  • the illuminance of the device is compared, and the obtained result is shown in FIG. 3.
  • the illuminating intensity of the high-brightness blue OLED device of the present invention is four times higher than that of the conventional blue OLED device. about.
  • the luminescence intensity of the OLED device can be multiplied by connecting two or more illuminating units in series; in addition, by using a translucent anode, a microcavity effect can be introduced to narrow the luminescence spectrum, and the light color is more Pure and further increase the luminous intensity, which is beneficial to improve the display effect of the OLED display.
  • the present invention further provides an OLED display, comprising a TFT substrate 110, a color conversion film 140 disposed on the TFT substrate 110, a flat layer 160 disposed on the color conversion film 140, An OLED device 120 disposed on the flat layer 160, a package cover 130 disposed above the OLED device 120, and a package adhesive 150 disposed between the package cover 130 and the OLED device 120;
  • the OLED device 120 includes an anode 10, a hole injection layer 20, a hole transport layer 30, a first light emitting unit 40, a charge generating layer 50, and a second light emitting unit 60 which are disposed in this order from bottom to top. And a cathode 70; the anode 10 is a translucent electrode;
  • the first light emitting unit 40 includes a first electron blocking layer 41, a first light emitting layer 42, and a first electron transport layer 43 disposed in order from bottom to top, and the second light emitting unit 60 includes sequentially arranged from bottom to top.
  • the first luminescent layer 42 and the second luminescent layer 62 are both blue luminescent layers;
  • the charge generating layer 50 includes Up to the electron generating layer 51 and the hole generating layer 52 arranged in order;
  • the color conversion film 140 includes a red pixel unit 141, a green pixel unit 142, and a blue pixel unit 143.
  • the red pixel unit 141 is a red conversion film
  • the green pixel unit 142 is a green conversion film.
  • the pixel unit 143 is a colorless transparent film or a through hole;
  • the OLED device 120 After the voltage is applied, the OLED device 120 emits blue light, and the blue light enters the color conversion film 140 through the anode 10 of the OLED device 120, and the red conversion film constituting the red pixel unit 141 is excited to emit red light, and the excitation constitutes the
  • the green conversion film of the green pixel unit 142 emits green light, and passes through the colorless transparent film or the through hole constituting the blue pixel unit 143 to emit blue light, thereby realizing display of three primary colors of red, green and blue.
  • the encapsulant 150 is used to bond the encapsulation cover 130 and the OLED device 120 to form a sealing protection for the OLED device 120 to block the erosion of the OLED device 120 by water and oxygen.
  • the material of the flat layer 160 is a transparent organic material.
  • the material of the red conversion film includes red quantum dots
  • the material of the green conversion film includes green quantum dots.
  • the red quantum dot includes a first inner core and a first outer casing, a material of the first inner core is cadmium selenide (CdSe), and a material of the first outer casing is zinc sulfide (ZnS);
  • the green quantum The point includes a second core and a second outer casing, the material of the second inner core is CdSe, and the second outer The material of the shell is ZnS.
  • the red conversion film has a thickness of 10 nm to 200 nm, preferably 30 nm.
  • the green conversion film has a thickness of 10 nm to 200 nm, preferably 30 nm.
  • the hole injection layer 20 has a thickness of 5 nm to 500 nm, preferably 10 nm.
  • the material of the hole injection layer 20 comprises hexonitrile hexaazatriphenylene (HATCN).
  • HTCN hexonitrile hexaazatriphenylene
  • the hole transport layer 30 has a thickness of 5 nm to 500 nm, preferably 60 nm.
  • the material of the hole transport layer 30 comprises N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine ( NPB).
  • NPB N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine
  • the first electron blocking layer 41 has a thickness of 5 nm to 30 nm, preferably 10 nm; and the second electron blocking layer 61 has a thickness of 5 nm to 30 nm, preferably 10 nm.
  • the materials of the first electron blocking layer 41 and the second electron blocking layer 61 each include 4,4′,4′′-tris(carbazol-9-yl)triphenylamine (TCTA).
  • the first light-emitting layer 42 has a thickness of 5 nm to 40 nm, preferably 25 nm; and the second light-emitting layer 62 has a thickness of 5 nm to 40 nm, preferably 25 nm.
  • the material of the blue light emitting layer comprises 4,4′-bis(2,2)-distyryl-1,1 biphenyl (DPVBi).
  • the first electron transport layer 43 has a thickness of 5 nm to 50 nm, preferably 20 nm.
  • the first electron transport layer 43 includes two structural layers disposed in an overlapping manner, wherein a material of one structural layer includes 4,7-diphenyl-1,10-phenanthroline, and a material of another structural layer includes 4 A mixture of 7-diphenyl-1,10-phenanthroline (Bphen) and lithium (Li), both of which have a thickness of preferably 10 nm.
  • the second electron transport layer 63 has a thickness of 5 nm to 50 nm, preferably 20 nm.
  • the material of the second electron transport layer 63 includes 4,7-diphenyl-1,10-phenanthroline (Bphen).
  • the film thickness of the electron generating layer 51 is 5 nm to 50 nm, and the film thickness of the hole generating layer 52 is 5 nm to 50 nm.
  • the film thickness of the electron generating layer 51 is 10 nm.
  • the film thickness of the hole generating layer 52 was 10 nm.
  • the material of the electron generating layer 51 includes hexaonitrile hexaazatriphenylene (HATCN); the material of the hole generating layer 52 includes N,N'-diphenyl-N,N'-(1 -Naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB).
  • HTCN hexaonitrile hexaazatriphenylene
  • NPB N,N'-diphenyl-N,N'-(1 -Naphthyl)-1,1'-biphenyl-4,4'-diamine
  • the anode 10 includes two transparent conductive metal oxide layers and a metal layer between the two transparent conductive metal oxide layers.
  • the material of the transparent conductive metal oxide layer is preferably indium tin oxide; the material of the metal layer may be silver or aluminum.
  • the transparent conductive metal oxide layer has a thickness of 5 nm to 50 nm, and the metal layer has a thickness of 5 nm to 25 nm.
  • the transparent The thickness of the conductive metal oxide layer was 15 nm, and the thickness of the metal layer was 15 nm.
  • the cathode 70 is a reflective electrode.
  • the material of the cathode 70 is usually a low work function metal material, such as lithium, lithium alloy, magnesium, magnesium alloy, calcium, calcium alloy, tantalum, niobium alloy, niobium, tantalum alloy, niobium, tantalum alloy, niobium.
  • the cathode 70 has a thickness of 50 nm to 1000 nm.
  • the cathode 70 is a composite film composed of a 1 nm lithium fluoride (LiF) layer and a 100 nm aluminum layer.
  • LiF lithium fluoride
  • the cathode 70 is formed into a film by a vacuum evaporation method.
  • the spectrum of the red, green and blue primary colors emitted by the OLED display of the present invention in the color coordinate system, the color coordinates of the red, green and blue primary colors are respectively red light (0.70, 0.30). Green light (0.15, 0.76), blue light (0.12, 0.08), it can be seen that the red, green and blue primary color lights emitted by the OLED display of the present invention all have higher color saturation, and make the OLED display of the present invention
  • the color gamut is as high as 122.6%.
  • the above OLED display wherein the OLED device can multiply the luminescence intensity of the OLED device by connecting two or more illuminating units in series; and by using a translucent anode, a microcavity effect can be introduced to narrow the luminescence spectrum
  • the light color is more pure and the luminous intensity is further improved; thereby, the excitation color conversion film emits red and green light, and the red, green and blue primary color lights with high color saturation are obtained, thereby improving the color gamut of the OLED display.
  • the present invention provides an OLED device and an OLED display.
  • the OLED device of the present invention can multiply the luminescence intensity of the OLED device by connecting two or more illuminating units in series; and by using a translucent anode, a microcavity effect can be introduced to narrow the luminescence spectrum, and the light is narrowed.
  • the color is purer and further increases the luminous intensity.
  • the OLED display of the present invention comprises the above OLED device, which multiplies the luminescence intensity by connecting two or more illuminating units in series; and by using a translucent anode, a microcavity effect can be introduced to narrow the luminescence spectrum, and the light is narrowed.
  • the color is more pure and further enhances the luminous intensity, thereby facilitating the excitation of the color conversion film to emit red and green light, obtaining red, green and blue primary color light of high color saturation, and improving the color gamut of the OLED display; since the OLED display corresponds to red, green,
  • the blue pixel light-emitting layer is a blue light-emitting layer, thereby avoiding the use of a precision metal mask, which is advantageous for improving the resolution of the OLED display.

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Abstract

一种OLED器件（120）与OLED显示器。所述OLED器件（120），通过将两个或者更多的发光单元（40,60）串联在一起，可以成倍增加OLED器件（120）的发光强度；同时通过使用半透明阳极（10），可引入微腔效应，使发光光谱变窄，光色更纯并且进一步提高发光强度。所述OLED显示器包含上述OLED器件（120），通过将两个或者更多的发光单元（40,60）串联在一起，成倍增加发光强度；同时通过使用半透明阳极（10），可引入微腔效应，使发光光谱变窄，光色更纯并且进一步提高发光强度，从而有利于激发色转换薄膜（140）发出红、绿光，得到高色饱和度的红绿蓝三原色光，提高OLED显示器的色域；由于OLED显示器中对应红、绿、蓝像素的发光层（42,62）均为蓝色发光层，从而避免使用精密金属掩膜版，有利于提高OLED显示器的分辨率。

Description

OLED器件与OLED显示器 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED器件与OLED显示器。
背景技术
OLED(Organic Light-Emitting Diode，有机发光二极管)显示器，也称为有机电致发光显示器，是一种新兴的平板显示装置，由于其具有制备工艺简单、成本低、功耗低、发光亮度高、工作温度适应范围广、体积轻薄、响应速度快，而且易于实现彩色显示和大屏幕显示、易于实现和集成电路驱动器相匹配、易于实现柔性显示等优点，因而具有广阔的应用前景。
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
目前大尺寸AMOLED显示器量产技术采用的是白光有机发光二极管(White Organic Light-emitting Diode，WOLED)加彩色滤光片(Color filter，CF)，其原理是将WOLED发出的白光经过彩色滤光片后滤出红绿蓝三原色。其优点是不需要精密金属掩膜版，利于制备大尺寸AMOLED显示器。但是WOLED制备工艺复杂，且通过彩色滤光片后会有2/3的光被滤掉，造成能量的损耗，再者彩色滤光片滤过的三原色光的色纯度较差，不适合制作广色域(>100％)的显示器。
另外，现有的OLED器件的发光强度较低，同样不利于提高OLED显示器的显示效果，图1为一种现有的普通蓝光OLED器件的结构示意图，该蓝光OLED器件包括从下到上依次设置的透明阳极100、空穴注入层200、空穴传输层300、电子阻挡层400、蓝光发光层500、电子传输层600、及阴极700；所述电子阻挡层400、蓝光发光层500、及电子传输层600构成一蓝光发光单元，由于该蓝光OLED器件只具有一个蓝光发光单元，因此发光强度较低，使得OLED显示器的显示效果较差。
发明内容
本发明的目的在于提供一种OLED器件，可提高发光强度，且光色更 纯，有利于提高OLED显示器的显示效果。
本发明的目的还在于提供一种OLED显示器，包含上述OLED器件，可提高发光强度，有利于激发色转换薄膜发出红、绿光，得到高色饱和度的红绿蓝三原色光，提高OLED显示器的色域，同时有利于提高OLED显示器的分辨率。
为实现上述目的，本发明首先提供一种OLED器件，包括从下到上依次设置的阳极、空穴注入层、空穴传输层、第一发光单元、电荷产生层、第二发光单元、及阴极；所述阳极为半透明电极；
所述第一发光单元包括从下到上依次设置的第一电子阻挡层、第一发光层、及第一电子传输层，所述第二发光单元包括从下到上依次设置的第二电子阻挡层、第二发光层、及第二电子传输层；
所述电荷产生层包括从下到上依次设置的电子产生层和空穴产生层。
所述第一发光层与第二发光层均为蓝光发光层，所述蓝光发光层的材料包括4,4′-二(2,2)-二苯乙烯基-1,1联苯；所述第一发光层的厚度为5nm～40nm；所述第二发光层的厚度为5nm～40nm。
所述阳极包括两透明导电金属氧化物层及位于两透明导电金属氧化物层之间的一金属层；所述透明导电金属氧化物层的厚度为5nm～50nm；所述金属层的厚度为5nm～25nm；
所述阴极为反射电极，所述阴极的材料包括锂、锂合金、镁、镁合金、钙、钙合金、锶、锶合金、镧、镧合金、铈、铈合金、铕、铕合金、镱、镱合金、铝、铝合金、铯、铯合金、铷、及铷合金中的一种或多种的组合；所述阴极的厚度为50nm～1000nm。
所述电子产生层的材料包括六腈六氮杂苯并菲；所述空穴产生层的材料包括N,N′-二苯基-N,N′-(1-萘基)-1,1′-联苯-4,4′-二胺；所述电子产生层的膜厚为5nm～50nm；所述空穴产生层的膜厚为5nm～50nm。
所述空穴注入层的材料包括六腈六氮杂苯并菲；所述空穴注入层的厚度为5nm～500nm；
所述空穴传输层的材料包括N,N′-二苯基-N,N′-(1-萘基)-1,1′-联苯-4,4′-二胺；所述空穴传输层的厚度为5nm～500nm；
所述第一电子阻挡层与第二电子阻挡层的材料均包括4,4',4″-三(咔唑-9-基)三苯胺；所述第一电子阻挡层与第二电子阻挡层的厚度均为5nm～30nm；
所述第一电子传输层包括重叠设置的两结构层，其中一结构层的材料包括4,7-二苯基-1,10-菲啰啉，另一结构层的材料包括4,7-二苯基-1,10-菲啰 啉与锂的混合物；所述第一电子传输层的厚度为5nm～50nm；
所述第二电子传输层的材料包括4,7-二苯基-1,10-菲啰啉；所述第二电子传输层的厚度为5nm～50nm。
本发明还提供一种OLED显示器，包括TFT基板、设于所述TFT基板上的色转换薄膜、设于所述色转换薄膜上的平坦层、设于所述平坦层上的OLED器件、设于所述OLED器件上方的封装盖板、以及设于所述封装盖板与OLED器件之间的封装胶材；
所述OLED器件包括从下到上依次设置的阳极、空穴注入层、空穴传输层、第一发光单元、电荷产生层、第二发光单元、及阴极；所述阳极为半透明电极；
所述第一发光单元包括从下到上依次设置的第一电子阻挡层、第一发光层、及第一电子传输层，所述第二发光单元包括从下到上依次设置的第二电子阻挡层、第二发光层、及第二电子传输层；所述第一发光层与第二发光层均为蓝光发光层；所述电荷产生层包括从下到上依次设置的电子产生层和空穴产生层；
所述色转换薄膜包括红色像素单元、绿色像素单元、及蓝色像素单元，所述红色像素单元为红色转换薄膜，所述绿色像素单元为绿色转换薄膜，所述蓝色像素单元为无色透明薄膜或通孔；
施加电压后，所述OLED器件发出蓝光，该蓝光穿过所述OLED器件的阳极进入色转换薄膜，激发构成所述红色像素单元的红色转换薄膜发出红光，激发构成所述绿色像素单元的绿色转换薄膜发出绿光，穿过构成所述蓝色像素单元的无色透明薄膜或通孔透出蓝光，从而实现红绿蓝三原色显示。
所述蓝光发光层的材料包括4,4′-二(2,2)-二苯乙烯基-1,1联苯；所述第一发光层的厚度为5nm～40nm；所述第二发光层的厚度为5nm～40nm。
所述阳极包括两透明导电金属氧化物层及位于两透明导电金属氧化物层之间的一金属层；所述透明导电金属氧化物层的厚度为5nm～50nm；所述金属层的厚度为5nm～25nm；
所述阴极为反射电极，所述阴极的材料包括锂、锂合金、镁、镁合金、钙、钙合金、锶、锶合金、镧、镧合金、铈、铈合金、铕、铕合金、镱、镱合金、铝、铝合金、铯、铯合金、铷、及铷合金中的一种或多种的组合；所述阴极的厚度为50nm～1000nm。
所述电子产生层的材料包括六腈六氮杂苯并菲；所述空穴产生层的材料包括N,N′-二苯基-N,N′-(1-萘基)-1,1′-联苯-4,4′-二胺；所述电子产生层的膜 厚为5nm～50nm；所述空穴产生层的膜厚为5nm～50nm。
所述空穴注入层的材料包括六腈六氮杂苯并菲；所述空穴注入层的厚度为5nm～500nm；
所述空穴传输层的材料包括N,N′-二苯基-N,N′-(1-萘基)-1,1′-联苯-4,4′-二胺；所述空穴传输层的厚度为5nm～500nm；
所述第一电子阻挡层与第二电子阻挡层的材料均包括4,4',4″-三(咔唑-9-基)三苯胺；所述第一电子阻挡层与第二电子阻挡层的厚度均为5nm～30nm；
所述第一电子传输层包括重叠设置的两结构层，其中一结构层的材料包括4,7-二苯基-1,10-菲啰啉，另一结构层的材料包括4,7-二苯基-1,10-菲啰啉与锂的混合物；所述第一电子传输层的厚度为5nm～50nm；
所述第二电子传输层的材料包括4,7-二苯基-1,10-菲啰啉；所述第二电子传输层的厚度为5nm～50nm；
所述红色转换薄膜的材料包括红色量子点，所述绿色转换薄膜的材料包括绿色量子点；所述红色转换薄膜的厚度为10nm～200nm；所述绿色转换薄膜的厚度为10nm～200nm。
本发明还提供一种OLED器件，包括从下到上依次设置的阳极、空穴注入层、空穴传输层、第一发光单元、电荷产生层、第二发光单元、及阴极；所述阳极为半透明电极；
所述第一发光单元包括从下到上依次设置的第一电子阻挡层、第一发光层、及第一电子传输层，所述第二发光单元包括从下到上依次设置的第二电子阻挡层、第二发光层、及第二电子传输层；所述电荷产生层包括从下到上依次设置的电子产生层和空穴产生层；
其中，所述第一发光层与第二发光层均为蓝光发光层，所述蓝光发光层的材料包括4,4′-二(2,2)-二苯乙烯基-1,1联苯；所述第一发光层的厚度为5nm～40nm；所述第二发光层的厚度为5nm～40nm；
其中，所述阳极包括两透明导电金属氧化物层及位于两透明导电金属氧化物层之间的一金属层；所述透明导电金属氧化物层的厚度为5nm～50nm；所述金属层的厚度为5nm～25nm；
所述阴极为反射电极，所述阴极的材料包括锂、锂合金、镁、镁合金、钙、钙合金、锶、锶合金、镧、镧合金、铈、铈合金、铕、铕合金、镱、镱合金、铝、铝合金、铯、铯合金、铷、及铷合金中的一种或多种的组合；所述阴极的厚度为50nm～1000nm。
本发明的有益效果：本发明提供的一种OLED器件，通过将两个或者 更多的发光单元串联在一起，可以成倍增加OLED器件的发光强度；同时通过使用半透明阳极，可引入微腔效应，使发光光谱变窄，光色更纯并且进一步提高发光强度。本发明提供的一种OLED显示器包含上述OLED器件，通过将两个或者更多的发光单元串联在一起，成倍增加发光强度；同时通过使用半透明阳极，可引入微腔效应，使发光光谱变窄，光色更纯并且进一步提高发光强度，从而有利于激发色转换薄膜发出红、绿光，得到高色饱和度的红绿蓝三原色光，提高OLED显示器的色域；由于OLED显示器中对应红、绿、蓝像素的发光层均为蓝色发光层，从而避免使用精密金属掩膜版，有利于提高OLED显示器的分辨率。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为一种现有的普通蓝光OLED器件的结构示意图；
图2为本发明的OLED器件的结构示意图；
图3为本发明的高亮度蓝光OLED器件与现有的普通蓝光OLED器件的发光强度的对比示意图；
图4为本发明的OLED显示器的结构示意图；
图5为本发明的OLED显示器发出的红绿蓝三原色光的光谱图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明首先提供一种OLED器件120，包括从下到上依次设置的阳极10、空穴注入层20、空穴传输层30、第一发光单元40、电荷产生层50、第二发光单元60、及阴极70；所述阳极10为半透明电极；
所述第一发光单元40包括从下到上依次设置的第一电子阻挡层41、第一发光层42、及第一电子传输层43；所述第二发光单元60包括从下到上依次设置的第二电子阻挡层61、第二发光层62、及第二电子传输层63；所述电荷产生层50包括从下到上依次设置的电子产生层51和空穴产生层52。
具体的，所述电荷产生层50用于分别向第一发光单元40和第二发光单元60提供其发光所需的电子或空穴，使得第一发光单元40在电荷产生层50和阳极10的作用下发光，第二发光单元60在电荷产生层50和阴极70的作用下发光。也就是说，电荷产生层50将第一发光单元40和第二发光单元60串联在阳极10和阴极70之间，实现串联式有机发光二极管的结构，可以增大发光效率。
具体的，所述阳极10用于将空穴注入到空穴注入层20中。
具体的，所述阳极10包括两透明导电金属氧化物层及位于两透明导电金属氧化物层之间的一金属层。所述透明导电金属氧化物层的材料优选为氧化铟锡；所述金属层的材料可以为银或铝。所述透明导电金属氧化物层的厚度为5nm～50nm，所述金属层的厚度为5nm～25nm。优选的，所述透明导电金属氧化物层的厚度为15nm，所述金属层的厚度为15nm。
具体的，所述空穴注入层20用于将空穴从阳极10注入到空穴传输层30。
优选的，所述空穴注入层20的材料包括六腈六氮杂苯并菲(Hexanitrilehexaazatriphenylene,HATCN)，所述六腈六氮杂苯并菲的结构式为
Figure PCTCN2016086713-appb-000001
具体的，所述空穴注入层20的厚度为5nm～500nm，优选为10nm。
具体的，所述空穴传输层30用于将空穴传输到第一发光单元40的第一电子阻挡层41中。
优选的，所述空穴传输层30的材料包括N,N′-二苯基-N,N′-(1-萘基)-1,1′-联苯-4,4′-二胺(N,N’-bis(naphthalen-1-yl)-N,N’-bis(phenyl)benzidine,NPB)，所述N,N′-二苯基-N,N′-(1-萘基)-1,1′-联苯-4,4′-二胺的结构式为
Figure PCTCN2016086713-appb-000002
具体的，所述空穴传输层30的厚度为5nm～500nm，优选为60nm。
具体的，所述第一电子阻挡层41与第二电子阻挡层61分别用于将电 子限制在第一发光层42与第二发光层62中，并且将空穴传输到第一发光层42与第二发光层62中。
具体的，所述第一电子阻挡层41与第二电子阻挡层61的材料均包括4,4',4″-三(咔唑-9-基)三苯胺(4,4′,4″-tris(N-carbazolyl)triphenylamine,TCTA)，所述4,4',4″-三(咔唑-9-基)三苯胺的结构式为
Figure PCTCN2016086713-appb-000003
具体的，所述第一电子阻挡层41的厚度为5nm～30nm，优选为10nm；所述第二电子阻挡层61的厚度为5nm～30nm，优选为10nm。
具体的，所述第一发光层42与第二发光层62用于使空穴和电子在发光层中复合发光。
优选的，所述第一发光层42与第二发光层62均为蓝光发光层，所述蓝光发光层的材料包括4,4′-二(2,2)-二苯乙烯基-1,1联苯(4,4′-Bis(2,2-diphenylvinyl)-1,10-biphenyl,DPVBi)，所述4,4′-二(2,2)-二苯乙烯基-1,1联苯的结构式为
Figure PCTCN2016086713-appb-000004
具体的，所述第一发光层42的厚度为5nm～40nm，优选为25nm；所述第二发光层62的厚度为5nm～40nm，优选为25nm。
具体的，所述第一电子传输层43用于将从电荷产生层50注入的电子传输到第一发光层42中，所述第二电子传输层63用于将从阴极70注入的电子传输到第二发光层62中。
具体的，所述第一电子传输层43的厚度为5nm～50nm，优选为20nm。
优选的，所述第一电子传输层43包括重叠设置的两结构层，其中一结构层的材料包括4,7-二苯基-1,10-菲啰啉(4,7-diphenyl-1,10-phenanthroline,Bphen)，另一结构层的材料包括4,7-二苯基-1,10-菲啰啉(Bphen)与锂(Li)的混合物，该两结构层的厚度均优选为10nm。所述4,7-二苯基-1,10-菲啰啉 的结构式为
Figure PCTCN2016086713-appb-000005
具体的，所述第二电子传输层63的厚度为5nm～50nm，优选为20nm。
具体的，所述第二电子传输层63的材料包括4,7-二苯基-1,10-菲啰啉(Bphen)。
具体的，所述电子产生层51用于产生电子，并将电子注入到第一发光单元40的第一电子传输层43中，所述空穴产生层52用于产生空穴，并将空穴注入到第二发光单元60的第二电子阻挡层61中。
具体的，所述电子产生层51的材料包括六腈六氮杂苯并菲(HATCN)；所述空穴产生层52的材料包括N,N′-二苯基-N,N′-(1-萘基)-1,1′-联苯-4,4′-二胺(NPB)。
具体的，所述电子产生层51的膜厚为5nm～50nm，所述空穴产生层52的膜厚为5nm～50nm；优选的，所述电子产生层51的膜厚为10nm，所述空穴产生层52的膜厚为10nm。
具体的，所述阴极70用于将电子注入到第二电子传输层63中。
优选的，所述阴极70为反射电极。
具体的，所述阴极70的材料通常为低功函金属材料，如包括锂(Li)、锂合金、镁(Mg)、镁合金、钙(Ca)、钙合金、锶(Sr)、锶合金、镧(La)、镧合金、铈(Ce)、铈合金、铕(Eu)、铕合金、镱(Yb)、镱合金、铝(Al)、铝合金、铯(Cs)、铯合金、铷(Rb)、及铷合金中的一种或多种的组合。优选的，所述阴极70的厚度为50nm～1000nm。
优选的，所述阴极70为由1nm的氟化锂(LiF)层与100nm的铝层叠加构成的复合薄膜。
优选的，所述阴极70采用真空蒸镀方法成膜。
通过将两个或者更多的发光单元串联在一起，相对于图1的仅具有单一发光单元的普通蓝光OLED器件，本发明的OLED器件具有较高的发光强度，当所述第一发光层42与第二发光层62均为蓝光发光层时，本发明的OLED器件即构成高亮度蓝光OLED器件，在相同电流密度下，将本发明的高亮度蓝光OLED器件与图1所示的普通蓝光OLED器件的发光强度进行对比，得到的结果如图3所示，从图3中可以看出，本发明的高亮度蓝光OLED器件的发光强度高于现有的普通蓝光OLED器件的发光强度的4倍左右。
上述OLED器件，通过将两个或者更多的发光单元串联在一起，可以成倍增加OLED器件的发光强度；另外通过使用半透明阳极，可引入微腔效应，使发光光谱变窄，光色更纯并且进一步提高发光强度，有利于提高OLED显示器的显示效果。
请参阅图4及图2，本发明还提供一种OLED显示器，包括TFT基板110、设于所述TFT基板110上的色转换薄膜140、设于所述色转换薄膜140上的平坦层160、设于所述平坦层160上的OLED器件120、设于所述OLED器件120上方的封装盖板130、以及设于所述封装盖板130与OLED器件120之间的封装胶材150；
如图2所示，所述OLED器件120包括从下到上依次设置的阳极10、空穴注入层20、空穴传输层30、第一发光单元40、电荷产生层50、第二发光单元60、及阴极70；所述阳极10为半透明电极；
所述第一发光单元40包括从下到上依次设置的第一电子阻挡层41、第一发光层42、及第一电子传输层43，所述第二发光单元60包括从下到上依次设置的第二电子阻挡层61、第二发光层62、及第二电子传输层63；所述第一发光层42与第二发光层62均为蓝光发光层；所述电荷产生层50包括从下到上依次设置的电子产生层51和空穴产生层52；
所述色转换薄膜140包括红色像素单元141、绿色像素单元142、及蓝色像素单元143，所述红色像素单元141为红色转换薄膜，所述绿色像素单元142为绿色转换薄膜，所述蓝色像素单元143为无色透明薄膜或通孔；
施加电压后，所述OLED器件120发出蓝光，该蓝光穿过所述OLED器件120的阳极10进入色转换薄膜140，激发构成所述红色像素单元141的红色转换薄膜发出红光，激发构成所述绿色像素单元142的绿色转换薄膜发出绿光，穿过构成所述蓝色像素单元143的无色透明薄膜或通孔透出蓝光，从而实现红绿蓝三原色显示。
具体的，所述封装胶材150用于粘接封装盖板130与OLED器件120，使封装盖板130对OLED器件120形成密封保护，阻隔水和氧对OLED器件120的侵蚀。
具体的，所述平坦层160的材料为透明有机材料。
具体的，所述红色转换薄膜的材料包括红色量子点，所述绿色转换薄膜的材料包括绿色量子点。
具体的，所述红色量子点包括第一内核和第一外壳，所述第一内核的材料为硒化镉(CdSe)，所述第一外壳的材料为硫化锌(ZnS)；所述绿色量子点包括第二内核和第二外壳，所述第二内核的材料为CdSe，所述第二外 壳的材料为ZnS。
具体的，所述红色转换薄膜的厚度为10nm～200nm，优选为30nm。
具体的，所述绿色转换薄膜的厚度为10nm～200nm，优选为30nm。
具体的，所述空穴注入层20的厚度为5nm～500nm，优选为10nm。
优选的，所述空穴注入层20的材料包括六腈六氮杂苯并菲(HATCN)。
具体的，所述空穴传输层30的厚度为5nm～500nm，优选为60nm。
优选的，所述空穴传输层30的材料包括N,N′-二苯基-N,N′-(1-萘基)-1,1′-联苯-4,4′-二胺(NPB)。
具体的，所述第一电子阻挡层41的厚度为5nm～30nm，优选为10nm；所述第二电子阻挡层61的厚度为5nm～30nm，优选为10nm。
具体的，所述第一电子阻挡层41与第二电子阻挡层61的材料均包括4,4',4″-三(咔唑-9-基)三苯胺(TCTA)。
具体的，所述第一发光层42的厚度为5nm～40nm，优选为25nm；所述第二发光层62的厚度为5nm～40nm，优选为25nm。
具体的，所述蓝光发光层的材料包括4,4′-二(2,2)-二苯乙烯基-1,1联苯(DPVBi)。
具体的，所述第一电子传输层43的厚度为5nm～50nm，优选为20nm。
具体的，所述第一电子传输层43包括重叠设置的两结构层，其中一结构层的材料包括4,7-二苯基-1,10-菲啰啉，另一结构层的材料包括4,7-二苯基-1,10-菲啰啉(Bphen)与锂(Li)的混合物，该两结构层的厚度均优选为10nm。
具体的，所述第二电子传输层63的厚度为5nm～50nm，优选为20nm。
具体的，所述第二电子传输层63的材料包括4,7-二苯基-1,10-菲啰啉(Bphen)。
具体的，所述电子产生层51的膜厚为5nm～50nm，所述空穴产生层52的膜厚为5nm～50nm；优选的，所述电子产生层51的膜厚为10nm，所述空穴产生层52的膜厚为10nm。
具体的，所述电子产生层51的材料包括六腈六氮杂苯并菲(HATCN)；所述空穴产生层52的材料包括N,N′-二苯基-N,N′-(1-萘基)-1,1′-联苯-4,4′-二胺(NPB)。
具体的，所述阳极10包括两透明导电金属氧化物层及位于两透明导电金属氧化物层之间的一金属层。所述透明导电金属氧化物层的材料优选为氧化铟锡；所述金属层的材料可以为银或铝。所述透明导电金属氧化物层的厚度为5nm～50nm，所述金属层的厚度为5nm～25nm。优选的，所述透明 导电金属氧化物层的厚度为15nm，所述金属层的厚度为15nm。
优选的，所述阴极70为反射电极。
具体的，所述阴极70的材料通常为低功函金属材料，如包括锂、锂合金、镁、镁合金、钙、钙合金、锶、锶合金、镧、镧合金、铈、铈合金、铕、铕合金、镱、镱合金、铝、铝合金、铯、铯合金、铷、及铷合金中的一种或多种的组合。优选的，所述阴极70的厚度为50nm～1000nm。
优选的，所述阴极70为由1nm的氟化锂(LiF)层与100nm的铝层叠加构成的复合薄膜。
优选的，所述阴极70采用真空蒸镀方法成膜。
如图5所示，为本发明的OLED显示器发出的红绿蓝三原色光的光谱图，在色坐标体系中，该红、绿、蓝三原色光的色坐标分别为红光(0.70，0.30)，绿光(0.15，0.76)，蓝光(0.12，0.08)，可以看出，本发明的OLED显示器发出的红、绿、蓝三原色光均具有较高的色饱和度，并使得本发明的OLED显示器的色域高达122.6％。
上述OLED显示器，其中的OLED器件通过将两个或者更多的发光单元串联在一起，可以成倍增加OLED器件的发光强度；同时通过使用半透明阳极，可引入微腔效应，使发光光谱变窄，光色更纯并且进一步提高发光强度；从而有利于激发色转换薄膜发出红、及绿光，得到高色饱和度的红绿蓝三原色光，进而提高了OLED显示器的色域。
综上所述，本发明提供一种OLED器件与OLED显示器。本发明的OLED器件，通过将两个或者更多的发光单元串联在一起，可以成倍增加OLED器件的发光强度；同时通过使用半透明阳极，可引入微腔效应，使发光光谱变窄，光色更纯并且进一步提高发光强度。本发明的OLED显示器包含上述OLED器件，通过将两个或者更多的发光单元串联在一起，成倍增加发光强度；同时通过使用半透明阳极，可引入微腔效应，使发光光谱变窄，光色更纯并且进一步提高发光强度，从而有利于激发色转换薄膜发出红、绿光，得到高色饱和度的红绿蓝三原色光，提高OLED显示器的色域；由于OLED显示器中对应红、绿、蓝像素的发光层均为蓝色发光层，从而避免使用精密金属掩膜版，有利于提高OLED显示器的分辨率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种OLED器件，包括从下到上依次设置的阳极、空穴注入层、空穴传输层、第一发光单元、电荷产生层、第二发光单元、及阴极；所述阳极为半透明电极；
    所述第一发光单元包括从下到上依次设置的第一电子阻挡层、第一发光层、及第一电子传输层，所述第二发光单元包括从下到上依次设置的第二电子阻挡层、第二发光层、及第二电子传输层；所述电荷产生层包括从下到上依次设置的电子产生层和空穴产生层。
  2. 如权利要求1所述的OLED器件，其中，所述第一发光层与第二发光层均为蓝光发光层，所述蓝光发光层的材料包括4,4′-二(2,2)-二苯乙烯基-1,1联苯；所述第一发光层的厚度为5nm～40nm；所述第二发光层的厚度为5nm～40nm。
  3. 如权利要求1所述的OLED器件，其中，所述阳极包括两透明导电金属氧化物层及位于两透明导电金属氧化物层之间的一金属层；所述透明导电金属氧化物层的厚度为5nm～50nm；所述金属层的厚度为5nm～25nm；
    所述阴极为反射电极，所述阴极的材料包括锂、锂合金、镁、镁合金、钙、钙合金、锶、锶合金、镧、镧合金、铈、铈合金、铕、铕合金、镱、镱合金、铝、铝合金、铯、铯合金、铷、及铷合金中的一种或多种的组合；所述阴极的厚度为50nm～1000nm。
  4. 如权利要求1所述的OLED器件，其中，所述电子产生层的材料包括六腈六氮杂苯并菲；所述空穴产生层的材料包括N,N′-二苯基-N,N′-(1-萘基)-1,1′-联苯-4,4′-二胺；所述电子产生层的膜厚为5nm～50nm；所述空穴产生层的膜厚为5nm～50nm。
  5. 如权利要求1所述的OLED器件，其中，所述空穴注入层的材料包括六腈六氮杂苯并菲；所述空穴注入层的厚度为5nm～500nm；
    所述空穴传输层的材料包括N,N′-二苯基-N,N′-(1-萘基)-1,1′-联苯-4,4′-二胺；所述空穴传输层的厚度为5nm～500nm；
    所述第一电子阻挡层与第二电子阻挡层的材料均包括4,4',4”-三(咔唑-9-基)三苯胺；所述第一电子阻挡层与第二电子阻挡层的厚度均为5nm～30nm；
    所述第一电子传输层包括重叠设置的两结构层，其中一结构层的材料包括4,7-二苯基-1,10-菲啰啉，另一结构层的材料包括4,7-二苯基-1,10-菲啰 啉与锂的混合物；所述第一电子传输层的厚度为5nm～50nm；
    所述第二电子传输层的材料包括4,7-二苯基-1,10-菲啰啉；所述第二电子传输层的厚度为5nm～50nm。
  6. 一种OLED显示器，包括TFT基板、设于所述TFT基板上的色转换薄膜、设于所述色转换薄膜上的平坦层、设于所述平坦层上的OLED器件、设于所述OLED器件上方的封装盖板、以及设于所述封装盖板与OLED器件之间的封装胶材；
    所述OLED器件包括从下到上依次设置的阳极、空穴注入层、空穴传输层、第一发光单元、电荷产生层、第二发光单元、及阴极；所述阳极为半透明电极；
    所述第一发光单元包括从下到上依次设置的第一电子阻挡层、第一发光层、及第一电子传输层，所述第二发光单元包括从下到上依次设置的第二电子阻挡层、第二发光层、及第二电子传输层；所述第一发光层与第二发光层均为蓝光发光层；所述电荷产生层包括从下到上依次设置的电子产生层和空穴产生层；
    所述色转换薄膜包括红色像素单元、绿色像素单元、及蓝色像素单元，所述红色像素单元为红色转换薄膜，所述绿色像素单元为绿色转换薄膜，所述蓝色像素单元为无色透明薄膜或通孔；
    施加电压后，所述OLED器件发出蓝光，该蓝光穿过所述OLED器件的阳极进入色转换薄膜，激发构成所述红色像素单元的红色转换薄膜发出红光，激发构成所述绿色像素单元的绿色转换薄膜发出绿光，穿过构成所述蓝色像素单元的无色透明薄膜或通孔透出蓝光，从而实现红绿蓝三原色显示。
  7. 如权利要求6所述的OLED显示器，其中，所述蓝光发光层的材料包括4,4′-二(2,2)-二苯乙烯基-1,1联苯；所述第一发光层的厚度为5nm～40nm；所述第二发光层的厚度为5nm～40nm。
  8. 如权利要求6所述的OLED显示器，其中，所述阳极包括两透明导电金属氧化物层及位于两透明导电金属氧化物层之间的一金属层；所述透明导电金属氧化物层的厚度为5nm～50nm；所述金属层的厚度为5nm～25nm；
    所述阴极为反射电极，所述阴极的材料包括锂、锂合金、镁、镁合金、钙、钙合金、锶、锶合金、镧、镧合金、铈、铈合金、铕、铕合金、镱、镱合金、铝、铝合金、铯、铯合金、铷、及铷合金中的一种或多种的组合；所述阴极的厚度为50nm～1000nm。
  9. 如权利要求6所述的OLED显示器，其中，所述电子产生层的材料包括六腈六氮杂苯并菲；所述空穴产生层的材料包括N,N′-二苯基-N,N′-(1-萘基)-1,1′-联苯-4,4′-二胺；所述电子产生层的膜厚为5nm～50nm；所述空穴产生层的膜厚为5nm～50nm。
  10. 如权利要求6所述的OLED显示器，其中，所述空穴注入层的材料包括六腈六氮杂苯并菲；所述空穴注入层的厚度为5nm～500nm；
    所述空穴传输层的材料包括N,N′-二苯基-N,N′-(1-萘基)-1,1′-联苯-4,4′-二胺；所述空穴传输层的厚度为5nm～500nm；
    所述第一电子阻挡层与第二电子阻挡层的材料均包括4,4',4”-三(咔唑-9-基)三苯胺；所述第一电子阻挡层与第二电子阻挡层的厚度均为5nm～30nm；
    所述第一电子传输层包括重叠设置的两结构层，其中一结构层的材料包括4,7-二苯基-1,10-菲啰啉，另一结构层的材料包括4,7-二苯基-1,10-菲啰啉与锂的混合物；所述第一电子传输层的厚度为5nm～50nm；
    所述第二电子传输层的材料包括4,7-二苯基-1,10-菲啰啉；所述第二电子传输层的厚度为5nm～50nm；
    所述红色转换薄膜的材料包括红色量子点，所述绿色转换薄膜的材料包括绿色量子点；所述红色转换薄膜的厚度为10nm～200nm；所述绿色转换薄膜的厚度为10nm～200nm。
  11. 一种OLED器件，包括从下到上依次设置的阳极、空穴注入层、空穴传输层、第一发光单元、电荷产生层、第二发光单元、及阴极；所述阳极为半透明电极；
    所述第一发光单元包括从下到上依次设置的第一电子阻挡层、第一发光层、及第一电子传输层，所述第二发光单元包括从下到上依次设置的第二电子阻挡层、第二发光层、及第二电子传输层；所述电荷产生层包括从下到上依次设置的电子产生层和空穴产生层；
    其中，所述第一发光层与第二发光层均为蓝光发光层，所述蓝光发光层的材料包括4,4′-二(2,2)-二苯乙烯基-1,1联苯；所述第一发光层的厚度为5nm～40nm；所述第二发光层的厚度为5nm～40nm；
    其中，所述阳极包括两透明导电金属氧化物层及位于两透明导电金属氧化物层之间的一金属层；所述透明导电金属氧化物层的厚度为5nm～50nm；所述金属层的厚度为5nm～25nm；
    所述阴极为反射电极，所述阴极的材料包括锂、锂合金、镁、镁合金、钙、钙合金、锶、锶合金、镧、镧合金、铈、铈合金、铕、铕合金、镱、 镱合金、铝、铝合金、铯、铯合金、铷、及铷合金中的一种或多种的组合；所述阴极的厚度为50nm～1000nm。
  12. 如权利要求11所述的OLED器件，其中，所述电子产生层的材料包括六腈六氮杂苯并菲；所述空穴产生层的材料包括N,N′-二苯基-N,N′-(1-萘基)-1,1′-联苯-4,4′-二胺；所述电子产生层的膜厚为5nm～50nm；所述空穴产生层的膜厚为5nm～50nm。
  13. 如权利要求11所述的OLED器件，其中，所述空穴注入层的材料包括六腈六氮杂苯并菲；所述空穴注入层的厚度为5nm～500nm；
    所述空穴传输层的材料包括N,N′-二苯基-N,N′-(1-萘基)-1,1′-联苯-4,4′-二胺；所述空穴传输层的厚度为5nm～500nm；
    所述第一电子阻挡层与第二电子阻挡层的材料均包括4,4',4”-三(咔唑-9-基)三苯胺；所述第一电子阻挡层与第二电子阻挡层的厚度均为5nm～30nm；
    所述第一电子传输层包括重叠设置的两结构层，其中一结构层的材料包括4,7-二苯基-1,10-菲啰啉，另一结构层的材料包括4,7-二苯基-1,10-菲啰啉与锂的混合物；所述第一电子传输层的厚度为5nm～50nm；
    所述第二电子传输层的材料包括4,7-二苯基-1,10-菲啰啉；所述第二电子传输层的厚度为5nm～50nm。
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