WO2017203622A1 - Sealing structure, method for manufacturing same, and sealing material - Google Patents
Sealing structure, method for manufacturing same, and sealing material Download PDFInfo
- Publication number
- WO2017203622A1 WO2017203622A1 PCT/JP2016/065434 JP2016065434W WO2017203622A1 WO 2017203622 A1 WO2017203622 A1 WO 2017203622A1 JP 2016065434 W JP2016065434 W JP 2016065434W WO 2017203622 A1 WO2017203622 A1 WO 2017203622A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sealing
- resin
- sealing structure
- electronic component
- metal layer
- Prior art date
Links
- 238000007789 sealing Methods 0.000 title claims abstract description 179
- 239000003566 sealing material Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 45
- 229920005989 resin Polymers 0.000 claims abstract description 127
- 239000011347 resin Substances 0.000 claims abstract description 127
- 229910052751 metal Inorganic materials 0.000 claims abstract description 109
- 239000002184 metal Substances 0.000 claims abstract description 109
- 230000008569 process Effects 0.000 claims description 19
- 238000000059 patterning Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 162
- 239000003822 epoxy resin Substances 0.000 description 65
- 229920000647 polyepoxide Polymers 0.000 description 65
- 239000011256 inorganic filler Substances 0.000 description 31
- 229910003475 inorganic filler Inorganic materials 0.000 description 31
- 239000004065 semiconductor Substances 0.000 description 31
- 239000011342 resin composition Substances 0.000 description 26
- 229920001971 elastomer Polymers 0.000 description 22
- 239000000806 elastomer Substances 0.000 description 21
- 239000007788 liquid Substances 0.000 description 21
- 239000003960 organic solvent Substances 0.000 description 21
- 239000003795 chemical substances by application Substances 0.000 description 20
- 238000005259 measurement Methods 0.000 description 20
- 239000002245 particle Substances 0.000 description 20
- 239000002966 varnish Substances 0.000 description 19
- 238000001035 drying Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 16
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- 239000005011 phenolic resin Substances 0.000 description 14
- -1 “HP-4710” Chemical compound 0.000 description 14
- 239000002904 solvent Substances 0.000 description 13
- 229920001187 thermosetting polymer Polymers 0.000 description 13
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 12
- 239000011889 copper foil Substances 0.000 description 12
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 10
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000003475 lamination Methods 0.000 description 9
- 150000002989 phenols Chemical class 0.000 description 9
- 239000007787 solid Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 7
- 238000000465 moulding Methods 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 6
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 6
- 239000006087 Silane Coupling Agent Substances 0.000 description 6
- 239000000470 constituent Substances 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 6
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 229920003986 novolac Polymers 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000000748 compression moulding Methods 0.000 description 5
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000004305 biphenyl Substances 0.000 description 4
- 235000010290 biphenyl Nutrition 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 150000002576 ketones Chemical class 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 238000001721 transfer moulding Methods 0.000 description 4
- FVCSARBUZVPSQF-UHFFFAOYSA-N 5-(2,4-dioxooxolan-3-yl)-7-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C(C(OC2=O)=O)C2C(C)=CC1C1C(=O)COC1=O FVCSARBUZVPSQF-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 150000001299 aldehydes Chemical class 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- GLTDLAUASUFHNK-UHFFFAOYSA-N n-silylaniline Chemical compound [SiH3]NC1=CC=CC=C1 GLTDLAUASUFHNK-UHFFFAOYSA-N 0.000 description 3
- 150000004780 naphthols Chemical class 0.000 description 3
- 125000001624 naphthyl group Chemical group 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 244000043261 Hevea brasiliensis Species 0.000 description 2
- 229920000459 Nitrile rubber Polymers 0.000 description 2
- NBBJYMSMWIIQGU-UHFFFAOYSA-N Propionic aldehyde Chemical compound CCC=O NBBJYMSMWIIQGU-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 239000004844 aliphatic epoxy resin Substances 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000007607 die coating method Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920003052 natural elastomer Polymers 0.000 description 2
- 229920001194 natural rubber Polymers 0.000 description 2
- 229920002857 polybutadiene Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- SMQUZDBALVYZAC-UHFFFAOYSA-N salicylaldehyde Chemical compound OC1=CC=CC=C1C=O SMQUZDBALVYZAC-UHFFFAOYSA-N 0.000 description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- HCNHNBLSNVSJTJ-UHFFFAOYSA-N 1,1-Bis(4-hydroxyphenyl)ethane Chemical compound C=1C=C(O)C=CC=1C(C)C1=CC=C(O)C=C1 HCNHNBLSNVSJTJ-UHFFFAOYSA-N 0.000 description 1
- OWEYKIWAZBBXJK-UHFFFAOYSA-N 1,1-Dichloro-2,2-bis(4-hydroxyphenyl)ethylene Chemical compound C1=CC(O)=CC=C1C(=C(Cl)Cl)C1=CC=C(O)C=C1 OWEYKIWAZBBXJK-UHFFFAOYSA-N 0.000 description 1
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 1
- KUBDPQJOLOUJRM-UHFFFAOYSA-N 2-(chloromethyl)oxirane;4-[2-(4-hydroxyphenyl)propan-2-yl]phenol Chemical compound ClCC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 KUBDPQJOLOUJRM-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- ZPQAUEDTKNBRNG-UHFFFAOYSA-N 2-methylprop-2-enoylsilicon Chemical compound CC(=C)C([Si])=O ZPQAUEDTKNBRNG-UHFFFAOYSA-N 0.000 description 1
- IKYAJDOSWUATPI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propane-1-thiol Chemical compound CO[Si](C)(OC)CCCS IKYAJDOSWUATPI-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- DCQBZYNUSLHVJC-UHFFFAOYSA-N 3-triethoxysilylpropane-1-thiol Chemical compound CCO[Si](OCC)(OCC)CCCS DCQBZYNUSLHVJC-UHFFFAOYSA-N 0.000 description 1
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- BATCUENAARTUKW-UHFFFAOYSA-N 4-[(4-hydroxyphenyl)-diphenylmethyl]phenol Chemical compound C1=CC(O)=CC=C1C(C=1C=CC(O)=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 BATCUENAARTUKW-UHFFFAOYSA-N 0.000 description 1
- UMPGNGRIGSEMTC-UHFFFAOYSA-N 4-[1-(4-hydroxyphenyl)-3,3,5-trimethylcyclohexyl]phenol Chemical compound C1C(C)CC(C)(C)CC1(C=1C=CC(O)=CC=1)C1=CC=C(O)C=C1 UMPGNGRIGSEMTC-UHFFFAOYSA-N 0.000 description 1
- IJWIRZQYWANBMP-UHFFFAOYSA-N 4-[2-(4-hydroxy-3-propan-2-ylphenyl)propan-2-yl]-2-propan-2-ylphenol Chemical compound C1=C(O)C(C(C)C)=CC(C(C)(C)C=2C=C(C(O)=CC=2)C(C)C)=C1 IJWIRZQYWANBMP-UHFFFAOYSA-N 0.000 description 1
- PVFQHGDIOXNKIC-UHFFFAOYSA-N 4-[2-[3-[2-(4-hydroxyphenyl)propan-2-yl]phenyl]propan-2-yl]phenol Chemical compound C=1C=CC(C(C)(C)C=2C=CC(O)=CC=2)=CC=1C(C)(C)C1=CC=C(O)C=C1 PVFQHGDIOXNKIC-UHFFFAOYSA-N 0.000 description 1
- DGUJJOYLOCXENZ-UHFFFAOYSA-N 4-[2-[4-(oxiran-2-ylmethoxy)phenyl]propan-2-yl]phenol Chemical class C=1C=C(OCC2OC2)C=CC=1C(C)(C)C1=CC=C(O)C=C1 DGUJJOYLOCXENZ-UHFFFAOYSA-N 0.000 description 1
- PRKPGWQEKNEVEU-UHFFFAOYSA-N 4-methyl-n-(3-triethoxysilylpropyl)pentan-2-imine Chemical compound CCO[Si](OCC)(OCC)CCCN=C(C)CC(C)C PRKPGWQEKNEVEU-UHFFFAOYSA-N 0.000 description 1
- 229920003319 Araldite® Polymers 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- VOWWYDCFAISREI-UHFFFAOYSA-N Bisphenol AP Chemical compound C=1C=C(O)C=CC=1C(C=1C=CC(O)=CC=1)(C)C1=CC=CC=C1 VOWWYDCFAISREI-UHFFFAOYSA-N 0.000 description 1
- HTVITOHKHWFJKO-UHFFFAOYSA-N Bisphenol B Chemical compound C=1C=C(O)C=CC=1C(C)(CC)C1=CC=C(O)C=C1 HTVITOHKHWFJKO-UHFFFAOYSA-N 0.000 description 1
- GIXXQTYGFOHYPT-UHFFFAOYSA-N Bisphenol P Chemical compound C=1C=C(C(C)(C)C=2C=CC(O)=CC=2)C=CC=1C(C)(C)C1=CC=C(O)C=C1 GIXXQTYGFOHYPT-UHFFFAOYSA-N 0.000 description 1
- SDDLEVPIDBLVHC-UHFFFAOYSA-N Bisphenol Z Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)CCCCC1 SDDLEVPIDBLVHC-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002174 Styrene-butadiene Substances 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 229920006311 Urethane elastomer Polymers 0.000 description 1
- SMEGJBVQLJJKKX-HOTMZDKISA-N [(2R,3S,4S,5R,6R)-5-acetyloxy-3,4,6-trihydroxyoxan-2-yl]methyl acetate Chemical compound CC(=O)OC[C@@H]1[C@H]([C@@H]([C@H]([C@@H](O1)O)OC(=O)C)O)O SMEGJBVQLJJKKX-HOTMZDKISA-N 0.000 description 1
- NOKSMMGULAYSTD-UHFFFAOYSA-N [SiH4].N=C=O Chemical compound [SiH4].N=C=O NOKSMMGULAYSTD-UHFFFAOYSA-N 0.000 description 1
- GSFXLBMRGCVEMO-UHFFFAOYSA-N [SiH4].[S] Chemical compound [SiH4].[S] GSFXLBMRGCVEMO-UHFFFAOYSA-N 0.000 description 1
- NOZAQBYNLKNDRT-UHFFFAOYSA-N [diacetyloxy(ethenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C=C NOZAQBYNLKNDRT-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- IKHGUXGNUITLKF-XPULMUKRSA-N acetaldehyde Chemical compound [14CH]([14CH3])=O IKHGUXGNUITLKF-XPULMUKRSA-N 0.000 description 1
- 229940081735 acetylcellulose Drugs 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 150000003934 aromatic aldehydes Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- MTAZNLWOLGHBHU-UHFFFAOYSA-N butadiene-styrene rubber Chemical compound C=CC=C.C=CC1=CC=CC=C1 MTAZNLWOLGHBHU-UHFFFAOYSA-N 0.000 description 1
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N butyric aldehyde Natural products CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- SJJCABYOVIHNPZ-UHFFFAOYSA-N cyclohexyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)C1CCCCC1 SJJCABYOVIHNPZ-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- NHYFIJRXGOQNFS-UHFFFAOYSA-N dimethoxy-bis(2-methylpropyl)silane Chemical compound CC(C)C[Si](OC)(CC(C)C)OC NHYFIJRXGOQNFS-UHFFFAOYSA-N 0.000 description 1
- VHPUZTHRFWIGAW-UHFFFAOYSA-N dimethoxy-di(propan-2-yl)silane Chemical compound CO[Si](OC)(C(C)C)C(C)C VHPUZTHRFWIGAW-UHFFFAOYSA-N 0.000 description 1
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 1
- ZDSFBVVBFMKMRF-UHFFFAOYSA-N dimethyl-bis(prop-2-enyl)silane Chemical compound C=CC[Si](C)(C)CC=C ZDSFBVVBFMKMRF-UHFFFAOYSA-N 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- QBNKDNRLUFTYIN-UHFFFAOYSA-N dodecyl(methoxy)silane Chemical compound CCCCCCCCCCCC[SiH2]OC QBNKDNRLUFTYIN-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- MABAWBWRUSBLKQ-UHFFFAOYSA-N ethenyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)C=C MABAWBWRUSBLKQ-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000011899 heat drying method Methods 0.000 description 1
- LKGYNSULFSODJP-UHFFFAOYSA-N hexane-1,1-diol;phenol Chemical compound OC1=CC=CC=C1.OC1=CC=CC=C1.CCCCCC(O)O LKGYNSULFSODJP-UHFFFAOYSA-N 0.000 description 1
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- DRXHEPWCWBIQFJ-UHFFFAOYSA-N methyl(triphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(C)OC1=CC=CC=C1 DRXHEPWCWBIQFJ-UHFFFAOYSA-N 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000011115 styrene butadiene Substances 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- ALVYUZIFSCKIFP-UHFFFAOYSA-N triethoxy(2-methylpropyl)silane Chemical compound CCO[Si](CC(C)C)(OCC)OCC ALVYUZIFSCKIFP-UHFFFAOYSA-N 0.000 description 1
- WUMSTCDLAYQDNO-UHFFFAOYSA-N triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)OCC WUMSTCDLAYQDNO-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- FBBATURSCRIBHN-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyldisulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSCCC[Si](OCC)(OCC)OCC FBBATURSCRIBHN-UHFFFAOYSA-N 0.000 description 1
- VTHOKNTVYKTUPI-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSSSCCC[Si](OCC)(OCC)OCC VTHOKNTVYKTUPI-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- LFRDHGNFBLIJIY-UHFFFAOYSA-N trimethoxy(prop-2-enyl)silane Chemical compound CO[Si](OC)(OC)CC=C LFRDHGNFBLIJIY-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- NLSXASIDNWDYMI-UHFFFAOYSA-N triphenylsilanol Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(O)C1=CC=CC=C1 NLSXASIDNWDYMI-UHFFFAOYSA-N 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 125000002256 xylenyl group Chemical class C1(C(C=CC=C1)C)(C)* 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
Definitions
- the present invention relates to a sealing structure, a manufacturing method thereof, and a sealing material.
- sealing of electronic components such as semiconductor elements is often performed in the final stage of manufacturing an electronic component device such as a semiconductor device.
- the process for forming the wiring for arranging the external connection terminal and the external connection terminal is performed on the sealed molded product produced by sealing the electronic component.
- wiring board material layer for forming wiring is provided on a resin encapsulating electronic components such as semiconductor elements.
- wiring board material layer goes against the reduction in the thickness and thickness of modern electronic devices.
- time and cost are required. Therefore, development of a new mounting method is required.
- the present invention has been made in view of the above problems, and an object thereof is to provide a manufacturing method of a sealing structure capable of simplifying a wiring formation process after sealing an electronic component. Moreover, an object of this invention is to provide the sealing material which can be used for the manufacturing method of the said sealing structure. Furthermore, this invention aims at providing the sealing structure which can be obtained with the manufacturing method of the said sealing structure.
- the manufacturing method of the sealing structure according to the present invention includes a sealing method in which a first electronic component is sealed with the resin layer of a sealing material including a metal layer and a resin layer disposed on the metal layer. A process is provided.
- the wiring can be formed using the metal layer of the sealing material, the wiring board material layer is formed after the first electronic component is sealed with the resin layer. There is no need to provide a new one. Therefore, according to the manufacturing method of the sealing structure which concerns on this invention, the wiring formation process after sealing an electronic component can be simplified.
- a plurality of electronic component devices may be obtained by dicing a sealing structure obtained by sealing a plurality of electronic components. Therefore, the more electronic components that are rearranged, the more electronic component devices that can be manufactured in a single process.
- studies have been conducted to enlarge the sealing structure.
- the sealing structure is formed into a wafer shape, and the diameter of the wafer shape tends to increase.
- the use of a sealing structure body as a panel is also being studied so that a printed wiring board manufacturing apparatus or the like that can be further enlarged and is cheaper than a semiconductor manufacturing apparatus can be used.
- liquid or solid resin is used as in transfer molding.
- a liquid flow or the like is generated with a liquid resin, and it becomes difficult to uniformly supply the object to be sealed.
- granule or powder resin may be used as solid resin instead of the conventional pellet-shaped resin.
- resin which is a granule or powder becomes a dust generation source, and there is a concern that the apparatus or the clean room is contaminated.
- the manufacturing method of the sealing structure according to the present invention by sealing the electronic component using the resin layer of the sealing material including the resin layer disposed on the metal layer, The resin can be uniformly supplied onto the electronic component) and dust generation can be reduced. Moreover, in the manufacturing method of the sealing structure which concerns on this invention, the sealing molding by the lamination which does not require a metal mold
- the method for manufacturing a sealing structure according to the present invention may further include a step of patterning the metal layer to obtain a metal pattern after the sealing step.
- the manufacturing method of the sealing structure according to the present invention may further include a step of obtaining a metal pattern as the metal layer before the sealing step.
- the manufacturing method of the sealing structure according to the present invention may further include a step of arranging a second electronic component on the opposite side of the metal layer from the resin layer after the sealing step.
- the manufacturing method of the sealing structure according to the present invention may further include a step of dicing the structure including the first electronic component, the resin layer, and the metal layer after the sealing step.
- the sealing material according to the present invention includes a metal layer and a resin layer disposed on the metal layer, and is used for sealing an electronic component with the resin layer.
- the sealing material according to the present invention since the wiring can be formed using the metal layer of the sealing material, there is no need to newly provide a wiring board material layer after sealing the electronic component with the resin layer. . Therefore, according to the sealing material which concerns on this invention, the wiring formation process after sealing an electronic component can be simplified.
- the metal layer may be a metal pattern.
- the sealing structure according to the present invention includes a first electronic component, a sealing portion that seals the first electronic component, and a metal layer disposed on the sealing portion.
- the sealing structure since the sealing structure includes the metal layer, there is no need to newly provide a wiring board material layer. Therefore, according to the sealing structure according to the present invention, the wiring formation process can be simplified.
- the metal layer may be a metal pattern.
- the sealing structure according to the present invention may include a plurality of the first electronic components.
- the sealing structure according to the present invention may further include a second electronic component on the opposite side of the metal layer from the sealing portion.
- the sealing material which can be used for the manufacturing method of the said sealing structure can be provided.
- the sealing structure which can be obtained with the manufacturing method of the said sealing structure can be provided.
- the terms “layer” and “film” include a structure formed in part in addition to a structure formed in the entire surface when observed as a plan view. Is done.
- a numerical range indicated by using “to” indicates a range including the numerical values described before and after “to” as the minimum value and the maximum value, respectively.
- the upper limit value or lower limit value of a numerical range of a certain step may be replaced with the upper limit value or lower limit value of the numerical range of another step.
- the upper limit value or the lower limit value of the numerical range may be replaced with the values shown in the examples. “A or B” only needs to include either A or B, and may include both.
- each component in the composition is the sum of the plurality of substances present in the composition unless there is a specific indication when there are a plurality of substances corresponding to each component in the composition. Means quantity.
- FIG.1 and FIG.2 is a schematic cross section which shows the sealing structure which concerns on this embodiment.
- Sealed structures (sealed molded products, electronic component devices) 100a, 100b, 100c, 100d, and 100e according to the present embodiment include an electronic component (first electronic component, first layer electronic component) 10, and A sealing part (cured resin product) 20 that seals the electronic component 10 and metal layers 30 and 30 a disposed on the sealing part 20 are provided.
- the metal layer 30 is an unpatterned metal layer, and the metal layer 30a is a metal pattern having a predetermined pattern shape.
- the sealing structure 100 a includes a plurality of electronic components 10, and the sealing unit 20 seals the plurality of electronic components 10.
- the metal layer 30 of the sealing structure 100 a is disposed on the entire surface of the sealing unit 20.
- the sealing structure 100b has a structure including, as the metal layer 30a, a metal pattern obtained by patterning the metal layer 30 of the sealing structure 100a.
- the metal layer 30a of the sealing structure 100b is disposed on a part of the sealing portion 20.
- the sealing structure 100c has a structure further including an electronic component (second electronic component, second-layer electronic component) 40 on the opposite side of the sealing layer 20 of the metal layer 30a of the sealing structure 100b. is doing.
- the sealing structure 100 d has a structure obtained by dicing the sealing structure 100 c for each electronic component 10, and includes a single electronic component 10 and an electronic component 40.
- the sealing structure 100e has a structure different from the sealing structure 100d in that the electronic component 40 is not provided.
- Examples of the electronic component 10 and the electronic component 40 include a semiconductor element; a semiconductor wafer; an integrated circuit; a semiconductor device; a filter such as a SAW filter; and a passive component such as a sensor.
- a semiconductor element obtained by separating a semiconductor wafer may be used.
- the sealing structure (electronic component device) according to the present embodiment may be a semiconductor device including a semiconductor element or a semiconductor wafer as an electronic component; a printed wiring board or the like.
- the thickness of the electronic component may be, for example, 1 to 1000 ⁇ m or 100 to 800 ⁇ m.
- the metal pattern may be a wiring pattern.
- the metal pattern may be a connection terminal (external connection terminal, electronic component connection terminal, etc.), or a pattern for supporting the connection terminal.
- the thickness of the metal layer will be described later in the description of the sealing material.
- the plurality of electronic components 10 may be of the same type or different types.
- the plurality of electronic components 40 may be of the same type or different types.
- the electronic component 10 and the electronic component 40 may be of the same type or different types.
- the sealing structure is not limited to the above embodiment.
- the constituent material of the sealing part that seals the electronic component may be a semi-cured or uncured resin instead of the cured resin (for example, FIG. 4A described later).
- the sealing structure according to the present embodiment may further include an intermediate layer between the sealing portion and the metal layer.
- the sealing structure according to the present embodiment may further include a resin layer, a metal layer, or the like on the side opposite to the sealing portion 20 of the electronic component 10.
- the sealing structure according to the present embodiment further includes a sealing portion that seals the electronic component 40, a metal layer (an unpatterned metal layer or a metal pattern) disposed on the sealing portion, and the like. May be.
- An electronic component may be further provided on the sealing structure including the electronic component 40.
- the manufacturing method of the sealing structure includes the metal layer and the resin layer of the sealing material including the resin layer disposed on the metal layer.
- the sealing step may be, for example, a step of heating and melting the resin layer and applying pressure to seal the electronic component with the resin layer.
- the manufacturing method of the sealing structure according to the present embodiment may include a step of arranging the sealing material so that the resin layer faces the electronic component.
- the manufacturing method of the sealing structure according to the present embodiment may include a step of curing the resin layer after the sealing step.
- the manufacturing method of the sealing structure which concerns on this embodiment may be equipped with the process of patterning a metal layer and obtaining a metal pattern after a sealing process.
- the manufacturing method of the sealing structure according to the present embodiment may include a step of arranging an electronic component (second electronic component) on the side opposite to the resin layer of the metal layer after the sealing step.
- the manufacturing method of the sealing structure according to the present embodiment includes a step of dicing the sealing structure (structure) including the electronic component (first electronic component), the resin layer, and the metal layer after the sealing step. You may have.
- a plurality of sealing structures can be obtained by dicing a structure including a plurality of electronic components for each electronic component.
- FIGS. 3 to 5 are schematic cross-sectional views for explaining the manufacturing method of the sealing structure according to this embodiment.
- the manufacturing method of the sealing structure according to the present embodiment will be described with reference to FIGS.
- the sealing material 1 includes a metal layer 30 and a resin layer 20 a disposed on the metal layer 30.
- the sealing material 1 is used for sealing an electronic component with the resin layer 20a.
- the resin layer 20 a only needs to be provided on at least a part of the metal layer 30, and may be provided on the entire surface of the metal layer 30.
- the resin layer 20a has a film shape, for example.
- the resin layer 20a is integrated with, for example, a metal layer 30 used as a carrier when forming the resin layer 20a into a film. The sealing material will be further described later.
- a plurality of electronic components 10 are mounted on the temporary fixing layer 60. Deploy. Subsequently, the sealing material 1 is disposed so that the resin layer 20 a faces the electronic component 10. The resin layer 20a is heated and melted, and pressure is applied to seal the electronic component 10 with the resin layer 20a. Thereby, as shown to Fig.4 (a), a sealing structure provided with the resin layer 20a which seals the some electronic component 10 is obtained. Examples of the method for sealing the electronic component 10 with the resin layer 20a include laminating, pressing, transfer molding, compression molding, and the like.
- the heating temperature in the sealing step is not particularly limited as long as the resin layer 20a melts, and may be, for example, 40 to 200 ° C.
- the pressure in a sealing process is not specifically limited, It can adjust according to the size of an electronic component, a density, etc.
- the pressure may be, for example, 0.01 to 10 MPa.
- the pressurization time is not particularly limited, and may be, for example, 5 to 600 seconds.
- the resin layer 20a is cured to obtain a sealing portion (resin cured layer, a cured product of the resin layer 20a) 20, thereby obtaining a sealing structure 100a.
- the resin layer 20a may be heat-cured or photocured.
- the curing treatment can be performed, for example, in the atmosphere or under an inert gas.
- the heating temperature for thermosetting is not particularly limited, and may be 60 to 300 ° C., for example.
- the curing time is not particularly limited, and may be, for example, 10 to 600 minutes.
- the metal layer 30 of the sealing structure 100a is patterned to obtain the metal layer (metal pattern) 30a as shown in FIG. 4C, thereby obtaining the sealing structure 100b.
- the patterning method is not particularly limited, and examples thereof include a wet etching method and a dry etching method.
- the sealing structure 100c is obtained by disposing the electronic component 40 on the opposite side of the metal layer 30a from the sealing portion 20.
- the metal layer 30a may be subjected to a plating process or the like.
- the sealing structure (structure) 100c including the electronic component 10, the sealing portion (resin cured layer) 20, the metal layer 30a, and the electronic component 40 is diced.
- the electronic structure 10 can be separated into individual pieces to obtain the sealing structure 100d.
- the electronic component 40 of the sealing structure 100 d may be sealed with the resin layer 20 a of the sealing material 1.
- the manufacturing method of a sealing structure is not limited to the said embodiment.
- the manufacturing method of the sealing structure according to the present embodiment may include a step of obtaining a metal pattern as a metal layer before the sealing step.
- the step of patterning the metal layer 30 may be performed before the electronic component 10 is sealed.
- the electronic component 10 may be sealed using a sealing material having a metal pattern (such as a wiring pattern) as the metal layer 30.
- Dicing of the sealing structure may be performed before the step of arranging the electronic component 40 or the step of patterning the metal layer 30.
- a cut portion 70 a is formed by a dicing blade 70 in a sealing portion 20 of a sealing structure (structure) including an electronic component 10, a sealing portion (resin cured layer) 20, and a metal layer 30 a. By forming, it can divide into every electronic component 10, and can obtain the sealing structure 100e.
- a plurality of electronic components are sealed with a resin layer and then dicing is performed for each electronic component to obtain a sealing structure, but a single electronic component is sealed with a resin layer to provide a sealing structure.
- the semiconductor wafer is used as an electronic component, after the semiconductor wafer is sealed with a resin layer to form a sealing portion, the semiconductor wafer sealed with the sealing portion by separating the semiconductor wafer together with the sealing portion You may obtain the sealing structure provided with an element.
- the sealing material which concerns on this embodiment is demonstrated. According to the sealing material according to the present embodiment, since the metal layer can be used for wiring formation as it is, the wiring formation process after sealing the electronic component can be simplified. According to the sealing material according to the present embodiment, the resin can be uniformly supplied onto the object to be sealed (electronic component) and the generation of dust can be reduced.
- the metal layer 30 included in the sealing material 1 may be a metal layer that does not have a pattern, or may be a metal pattern.
- the metal pattern can be obtained by patterning a metal layer having no pattern.
- the metal layer 30 may be a layer containing a metal capable of forming a wiring. Examples of the constituent material of the metal layer 30 include copper, aluminum, lead, and the like.
- the constituent material of the metal layer 30 is preferably copper from the viewpoint that it can be easily applied as a wiring.
- the metal layer 30 may be a metal foil or a copper foil.
- the thickness of the metal layer 30 is preferably 2 ⁇ m or more, more preferably 10 ⁇ m or more, from the viewpoint that it is easy to avoid problems such as the metal layer 30 being cut at the time of coating and the metal layer 30 being bent by the weight of the varnish. More preferably, it is 18 ⁇ m or more.
- the thickness of the metal layer 30 is preferably 200 ⁇ m or less from the viewpoint that it is easy to avoid problems that prevent solvent drying in the varnish when hot air is blown from both the coated surface and the back surface. 100 micrometers or less are more preferable and 50 micrometers or less are still more preferable.
- the thickness of the resin layer 20a included in the sealing material 1 may be 10 ⁇ m or more, or 100 ⁇ m or more from the viewpoint of easily suppressing variation in the in-plane thickness at the time of coating.
- the thickness of the resin layer 20a may be 1000 ⁇ m or less or 500 ⁇ m or less from the viewpoint of obtaining a certain drying property in the depth direction during coating.
- the thickness of the sealing part 20 after hardening in a sealing structure may be the same as the thickness of the said resin layer 20a.
- the constituent material of the resin layer 20a is not particularly limited as long as it is usually a resin used for sealing electronic components.
- the resin layer 20a is preferably a layer made of a curable resin composition.
- the curable resin composition may be either thermosetting or photocurable.
- thermosetting resin composition examples include (A) a thermosetting component and (B) a resin composition containing an inorganic filler.
- Thermosetting components include thermosetting resins (epoxy resins, phenoxy resins, cyanate resins, thermosetting polyimides, melamine resins, urea resins, unsaturated polyesters, alkyd resins, phenol resins, polyurethanes, etc.), curing agents, etc. Can be mentioned.
- the thermosetting component contains, for example, (a1) an epoxy resin and (a2) a curing agent.
- the epoxy resin can be used without particular limitation as long as it has two or more glycidyl groups in one molecule.
- epoxy resins bisphenol A type epoxy resin, bisphenol AP type epoxy resin, bisphenol AF type epoxy resin, bisphenol B type epoxy resin, bisphenol BP type epoxy resin, bisphenol C type epoxy resin, bisphenol E type epoxy resin, bisphenol F type Epoxy resin, bisphenol G type epoxy resin, bisphenol M type epoxy resin, bisphenol S type epoxy resin, bisphenol P type epoxy resin, bisphenol PH type epoxy resin, bisphenol TMC type epoxy resin, bisphenol Z type epoxy resin, bisphenol S type epoxy resin (Hexanediol bisphenol S diglycidyl ether, etc.), novolac phenol type epoxy resin, biphenyl type epoxy resin, Phthalene type epoxy resins, dicyclopentadiene type epoxy resins, bixylenol type epoxy resins (such as bixylenol diglycidyl ether), hydrogenated bisphenol A type epoxy resins (such
- epoxy resins include naphthalene type epoxy resins such as “HP-4710”, “Epiclon HP-4032”, and “EXA-4750” manufactured by DIC Corporation; “NC-7000” (manufactured by Nippon Kayaku Co., Ltd.) Naphthalene skeleton-containing polyfunctional solid epoxy resins) such as naphthalene type epoxy resins; “EPPN-502H” (trisphenol epoxy resin) manufactured by Nippon Kayaku Co., Ltd., and phenols and aromatic aldehydes having a phenolic hydroxyl group Epoxidized condensate (trisphenol type epoxy resin); Dicyclopentadiene aralkyl type epoxy resin such as “Epiclon HP-7200H” (dicyclopentadiene skeleton-containing polyfunctional solid epoxy resin) manufactured by DIC Corporation; Nippon Kayaku Co., Ltd.
- NC-3000H (including biphenyl skeleton) Biphenyl aralkyl type epoxy resins such as polyfunctional solid epoxy resins; “Epicron N660” and “Epicron N690” manufactured by DIC Corporation; Novolac type epoxy resins such as “EOCN-104S” manufactured by Nippon Kayaku Co., Ltd .; Tris (2,3-epoxypropyl) isocyanurate such as "TEPIC” manufactured by Kogyo Co., Ltd .; "Epicron 860", “Epicron 900-IM”, “Epicron EXA-4816” and “Epicron EXA-” manufactured by DIC Corporation 4822 “;” Araldite AER280 "manufactured by Asahi Ciba Co., Ltd .;” Epototo YD-134 “manufactured by Toto Kasei Co., Ltd .;” JER834 "and” JER872 "manufactured
- the content of the (a1) epoxy resin is preferably 10 to 50% by mass based on the total mass of the resin composition (excluding solvents such as organic solvents) from the viewpoint of excellent embedding of electronic components, It is more preferably 10 to 40% by mass, and further preferably 10 to 35% by mass.
- the curing agent can be used without particular limitation as long as it has two or more functional groups that react with a glycidyl group in one molecule.
- A2 As a hardening
- curing agent can be used individually by 1 type or in combination of 2 or more types.
- the phenol resin is not particularly limited as long as it has two or more phenolic hydroxyl groups in one molecule, and a known phenol resin can be used.
- phenol resins include resins obtained by condensation or co-condensation of phenols and / or naphthols and aldehydes under an acidic catalyst, biphenyl skeleton type phenol resins, paraxylylene-modified phenol resins, metaxylylene / paraxylylene-modified phenol resins.
- phenols include phenol, cresol, xylenol, resorcinol, catechol, bisphenol A, bisphenol F, and the like.
- naphthols include ⁇ -naphthol, ⁇ -naphthol, dihydroxynaphthalene and the like.
- aldehydes include formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde, salicylaldehyde and the like.
- phenol resins include “Phenolite LF2882”, “Phenolite LF2822”, “Phenolite TD-2090”, “Phenolite TD-2149”, “Phenolite VH-4150” manufactured by Dainippon Ink and Chemicals, Inc. And “Phenolite VH4170”; “XLC-LL” and “XLC-4L” manufactured by Mitsui Chemicals, Inc .; “SN-100”, “SN-300”, and “SN-395” manufactured by Nippon Steel & Sumikin Chemicals, Inc.
- the content of the curing agent is 10 to 50% by mass based on the total mass of the resin composition (excluding solvents such as organic solvents) from the viewpoint of excellent curability of the thermosetting resin. Preferably, it is 10 to 40% by mass, more preferably 10 to 35% by mass.
- the equivalent of the glycidyl group of the resin / (a2) the equivalent of the functional group that reacts with the glycidyl group of the curing agent) is preferably 0.7 to 2.0, more preferably 0.8 to 1.8. Preferably, it is 0.9 to 1.7. In these cases, unreacted (a1) epoxy resin and / or unreacted (a2) curing agent hardly remains, and desired cured film properties are easily obtained.
- the thermosetting component may contain (a3) a curing accelerator.
- A3) There is no restriction
- the curing accelerator is preferably at least one selected from the group consisting of amine-based curing accelerators and phosphorus-based curing accelerators.
- an amine-based curing accelerator is preferable from the viewpoint of abundant derivatives and a viewpoint that a desired active temperature can be easily obtained, and an imidazole compound, an aliphatic amine, and an alicyclic group. At least one selected from the group consisting of amines is more preferable, and imidazole compounds are more preferable.
- a hardening accelerator can be used individually by 1 type or in combination of 2 or more types.
- the content of (a3) curing accelerator is preferably 0.01 to 5% by mass, more preferably 0.1 to 3% by mass, based on the total amount of (a1) epoxy resin and (a2) curing agent, More preferred is 0.3 to 1.5% by mass.
- (A3) When the content of the curing accelerator is 0.01% by mass or more, a sufficient curing acceleration effect is easily obtained.
- (A3) When the content of the curing accelerator is 5% by mass or less, curing is unlikely to proceed during the process of manufacturing the sealing material (for example, coating and drying) or during storage of the sealing material. It is easy to prevent cracking of the resin layer and molding defects accompanying an increase in melt viscosity.
- the curable resin composition of the present embodiment preferably contains a liquid resin at 25 ° C.
- the content of the liquid resin is that the total mass of the resin composition (from the viewpoint of easily drying the solvent during coating and from the viewpoint of easily imparting flexibility to the film, since the liquid resin substitutes for the solvent) 5 to 50% by mass is preferable, 5 to 40% by mass is more preferable, and 5 to 35% by mass is still more preferable.
- the inorganic filler conventionally known inorganic fillers can be used and are not limited to specific ones.
- a constituent material of the inorganic filler for example, barium sulfate; barium titanate; silicas such as amorphous silica, crystalline silica, fused silica, and spherical silica; talc; clay; magnesium carbonate; calcium carbonate; Examples thereof include aluminum; aluminum hydroxide; silicon nitride; aluminum nitride.
- the constituent material of the inorganic filler has a relatively small thermal expansion coefficient, as well as a viewpoint of easily obtaining a dispersibility improving effect in the resin and a sedimentation suppressing effect in the varnish by surface modification or the like. From the viewpoint of easily obtaining desired cured film properties, silicas are preferable.
- An inorganic filler can be used individually by 1 type or in combination of 2 or more types.
- the inorganic filler may be surface-modified.
- the method for surface modification is not particularly limited. Surface modification using a silane coupling agent is preferable from the viewpoint of simple treatment, rich types of functional groups, and easy provision of desired characteristics.
- silane coupling agent examples include alkyl silane, alkoxy silane, vinyl silane, epoxy silane, amino silane, acrylic silane, methacryl silane, mercapto silane, sulfide silane, isocyanate silane, sulfur silane, styryl silane, alkyl chlorosilane, and the like.
- examples of the inorganic filler surface-modified with a silane coupling agent include “SC5500-SXE” and “SC2500-SXJ” manufactured by Admatechs Co., Ltd.
- a silane coupling agent can be used individually by 1 type or in combination of 2 or more types.
- silane coupling agent examples include methyltrimethoxysilane, dimethyldimethoxysilane, trimethylmethoxysilane, methyltriethoxysilane, methyltriphenoxysilane, ethyltrimethoxysilane, n-propyltrimethoxysilane, diisopropyldimethoxysilane, isobutyl.
- the average particle size of the inorganic filler is not particularly limited, but is preferably 0.01 to 50 ⁇ m, more preferably 0.1 to 25 ⁇ m, still more preferably 0.3 to 10 ⁇ m.
- the average particle diameter of an inorganic filler is 0.01 micrometer or more, aggregation of an inorganic filler is suppressed easily and an inorganic filler can be fully fully disperse
- the average particle diameter of an inorganic filler is 50 micrometers or less, sedimentation (for example, sedimentation in a varnish) of an inorganic filler can be suppressed easily and it is easy to form a homogeneous resin layer.
- the content of the inorganic filler is preferably 81% by mass or less, more preferably 75% by mass or less, and more preferably 70% by mass or less, based on the total mass of the resin composition (excluding solvents such as organic solvents). Further preferred. In these cases, good fluidity can be secured while realizing low warpage of the sealing structure, and good adhesive strength between the metal layer and the resin layer in the sealing material can be obtained. In addition, the effect of easily suppressing the cracking of the resin layer in the drying process during the production of the sealing material, the effect of improving the adhesion between the resin layer and the metal layer, and sealing the object to be sealed The effect which becomes easy can be acquired suitably.
- the content of the inorganic filler is 50% by mass or more from the viewpoint of easily preventing warpage of the sealing structure due to the difference in thermal expansion coefficient between the sealed body and the sealing portion.
- 60 mass% or more is more preferable, and 65 mass% or more is still more preferable.
- the content of the (B) inorganic filler is preferably 50 to 81% by mass, more preferably 60 to 75% by mass, and still more preferably 65 to 70% by mass.
- the resin composition of the present embodiment may contain (C) an elastomer (flexible agent) as necessary. (C) By using an elastomer, warping after sealing (for example, the warping amount of the sealing structure) and cracking of the resin in the sealing structure can be effectively reduced.
- elastomer (C) examples include thermoplastic elastomers such as silicone, styrene, olefin, urethane, polyester, polyether, polyamide, and polybutadiene; NR (natural rubber), NBR (acrylonitrile-butadiene) Rubber), acrylic rubber, urethane rubber, silicone powder, etc .; methyl methacrylate-styrene-butadiene copolymer (MBS), methyl methacrylate-silicone copolymer, methyl methacrylate-butyl acrylate copolymer, etc. And rubber particles having a core-shell structure.
- thermoplastic elastomers such as silicone, styrene, olefin, urethane, polyester, polyether, polyamide, and polybutadiene
- NR natural rubber
- NBR acrylonitrile-butadiene Rubber
- acrylic rubber urethane rubber
- silicone powder etc .
- MBS methyl methacrylate
- the elastomer is preferably at least one selected from the group consisting of styrene butadiene particles, silicone powder, silicone oil and silicone oligomer from the viewpoint of excellent dispersibility and solubility.
- An elastomer can be used individually by 1 type or in combination of 2 or more types.
- the average particle size of the elastomer is not particularly limited.
- the average particle diameter of the elastomer is preferably 50 ⁇ m or less from the viewpoint of excellent embedding between electronic components (for example, embedding for eWLB use).
- the average particle diameter of the elastomer is preferably 0.1 ⁇ m or more from the viewpoint of excellent dispersibility.
- (C) A commercially available product may be used as the elastomer.
- KANE ACE As a commercial product of elastomer, for example, “B series”, “M series” and “FM series” (all trade names) of KANE ACE (“KANE ACE” is a registered trademark) manufactured by Kaneka Corporation; Examples include “KMP series” manufactured by Shin-Etsu Chemical Co., Ltd.
- Some commercially available (C) elastomers are dispersed in advance in a liquid resin (for example, a liquid epoxy resin) instead of the elastomer alone, but can be used without any problem. Examples of such commercially available products include “MX-136” and “MX-965” manufactured by Kaneka Corporation.
- the resin composition of the present embodiment may contain (D) an organic solvent.
- the organic solvent may be an organic solvent derived from the varnish that remains without being removed in the drying step during the production (such as coating) of the sealing material.
- organic solvent a conventionally known organic solvent can be used.
- organic solvent the solvent which can melt
- organic solvent (D) include aliphatic hydrocarbons, aromatic hydrocarbons, terpenes, halogens, esters, ketones, alcohols, aldehydes and the like.
- the specific (D) organic solvent is selected from the group consisting of esters, ketones and alcohols from the viewpoint of low environmental burden and from the viewpoint of easily dissolving the (a1) epoxy resin and (a2) curing agent. At least one of these is preferred.
- ketones are preferable from the viewpoint of easily dissolving the (a1) epoxy resin and the (a2) curing agent.
- the ketones at least one selected from the group consisting of acetone, methyl ethyl ketone and methyl isobutyl ketone is preferable from the viewpoint of low volatility at room temperature and easy removal during drying.
- the content of the organic solvent is preferably 0.2 to 1.5% by mass, more preferably 0.3 to 1% by mass with respect to the total mass of the resin composition (including solvents such as organic solvents). preferable.
- the content of the organic solvent is 0.2% by mass or more, the epoxy resin composition becomes brittle and defects such as cracking of the resin occur, and the minimum melt viscosity becomes high and the sealed object is embedded. It can prevent that property falls.
- the content of the organic solvent is 1.5% by mass or less, the adhesiveness of the resin composition becomes too strong and the handling property is lowered, and the volatilization of the organic solvent at the time of thermosetting the resin layer It is possible to easily prevent problems such as foaming.
- the resin composition of the present embodiment may further contain other additives as long as the effects of the present invention are not impaired.
- additives include pigments, dyes, mold release agents, antioxidants, surface tension adjusting agents and the like.
- Sealing material 1 can be stored, for example, in the form of a flat plate.
- the sealing material 1 can be wound around a cylindrical core or the like and stored in a roll form.
- the sealing material 1 may further include an intermediate layer between the resin layer 20 a and the metal layer 30.
- the sealing material 1 may further include a protective layer for the purpose of protecting the resin layer 20a on the opposite side of the resin layer 20a from the metal layer 30. Thereby, the handleability is improved. In addition, foreign matters can be prevented from being mixed into the resin layer 20a, and a problem that the resin layer 20a sticks to the back surface of the metal layer 30 when it is wound can be avoided.
- a polymer film, a metal foil or the like can be used as the protective layer.
- the polymer film include a polyolefin film such as a polyethylene film, a polypropylene film, and a polyvinyl chloride film; a polyester film such as a polyethylene terephthalate film; a polycarbonate film; an acetylcellulose film; and a tetrafluoroethylene film.
- the metal foil include copper foil and aluminum foil.
- the manufacturing method of the sealing material 1 includes, for example, a step of applying a resin composition on the metal layer 30 to form a coating film, and a step of heating and drying the coating film to form the resin layer 20a. May be.
- the application method is not particularly limited, and examples thereof include die coating and comma coating. Examples of the heat drying method include hot air blowing.
- a coating film may be formed using a resin composition containing a solvent such as an organic solvent as a varnish.
- the varnish can be prepared, for example, by mixing (A) a thermosetting component, (B) an inorganic filler, (D) an organic solvent, and optional components used as necessary.
- the mixing method of each component is not particularly limited, and a mill, a mixer, a stirring blade or the like can be used.
- the organic solvent can be used to prepare the varnish by dissolving the thermosetting component (A) contained in the resin composition, or to assist in preparing the varnish, Most can be removed in the drying process.
- the inorganic filler may be preliminarily dispersed as necessary.
- the dispersion treatment method include a method using a nanomizer that advances dispersion by high-speed shearing force, a method (B) of pulverizing an inorganic filler using a spherical medium called beads (a method using a bead mill), and the like.
- examples of commercially available silica slurries include “SC2050-MTK” manufactured by Admatechs Corporation.
- epoxy resin a11: Bisphenol F type epoxy resin (manufactured by Mitsubishi Chemical Corporation, trade name: JER806, epoxy equivalent: 160) (component that is liquid at 25 ° C.)
- a12 Naphthalene skeleton-containing polyfunctional solid epoxy resin (manufactured by DIC Corporation, trade name: EXA-4750, epoxy equivalent: 182) (component not liquid at 25 ° C.)
- a13 Naphthalene skeleton-containing polyfunctional solid epoxy resin (manufactured by DIC Corporation, trade name: HP-4710, epoxy equivalent: 170) (component not liquid at 25 ° C.)
- a21 Phenol novolak (Asahi Organic Materials Co., Ltd., trade name: PAPS-PN2, phenolic hydroxyl group equivalent: 104) (component not liquid at 25 ° C.)
- a22 Naphthalene all-novolak (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., trade name: SN-395) (component not liquid at 25 ° C.)
- a23 Phenol novolak (Madewa Kasei Co., Ltd., trade name: DL-92, phenolic hydroxyl group equivalent: 103) (component not liquid at 25 ° C.)
- B1 Aluminum oxide particles (manufactured by Sumitomo Chemical Co., Ltd., trade name: AA-1.5, average particle size: 1.5 ⁇ m)
- B2 Silica particles (manufactured by Admatechs Co., Ltd., trade name: SC5500-SXE, phenylaminosilane treatment, average particle size: 1.6 ⁇ m)
- B3 Silica particles (manufactured by Admatechs Co., Ltd., trade name: SC2500-SXJ, phenylaminosilane treatment, average particle size: 0.5 ⁇ m)
- B4 Silica slurry (manufactured by Admatechs Co., Ltd., trade name: SC2050-MTK, average particle size: 0.5 ⁇ m, content of silica particles: 70.18% by mass)
- Example 1 (Preparation of varnish) A varnish (varnish-like resin composition) having the composition shown in Table 1 was prepared as follows. 100 g of component D was placed in a 10 L polyethylene container. Next, after adding 750.8g of component B3 to the container, the component B3 was disperse
- sealing material A Applying the varnish on a copper foil (trade name: YGP-35R, copper foil thickness: 35 ⁇ m) by using a coating machine to obtain a coating film, drying the coating film, A resin layer was formed on the copper foil. Application and drying were performed under the following conditions. The thickness of the resin layer after drying was 20 ⁇ m. Sealing material A was obtained by disposing a 50 ⁇ m thick protective layer (polyethylene terephthalate film) on the opposite side of the resin layer from the copper foil. In each of the following measurements, the measurement was performed after the protective layer was peeled off. Coating machine: Die coater manufactured by Hirano Techseed Co., Ltd. Coating head method: Die coating and drying speed: 5 m / min Drying conditions (temperature / furnace length): 60 ° C./3.3 m, 90 ° C./3.3 m, 110 ° C./3 .3m
- a sealing material B was prepared in the same manner as the sealing material A except that the coating and drying speed was changed to 1 m / min.
- the thickness of the resin layer after drying was 200 ⁇ m.
- Measuring device Rheometer, manufactured by TA Instruments Japan Co., Ltd., trade name: ARES-G2 Measurement mode: Dynamic Temperature Ramp Frequency: 1.0Hz Temperature range: 40-200 ° C Temperature increase rate: 5 ° C / min
- Lamination condition Laminator: Vacuum pressure laminator MVLP-500 manufactured by Meiki Seisakusho Co., Ltd. Lamination temperature: 110 ° C Lamination pressure: 0.5 MPa Vacuuming time: 30 seconds Laminating time: 40 seconds
- Adhesive strength measuring device EZTest / CE, manufactured by Shimadzu Corporation Pulling speed: 5cm / min
- Lamination condition Laminator: Vacuum pressure laminator MVLP-500 manufactured by Meiki Seisakusho Co., Ltd. Lamination temperature: 90 ° C Lamination pressure: 0.5 MPa Vacuuming time: 30 seconds Laminating time: 40 seconds
- Example 2 689.6 g of component B1 is used as the inorganic filler, 130.5 g of component a11, 37.1 g of component a12 and 17.1 g of component a13 are used as the epoxy resin, and 123.5 g of component a22 is used as the curing agent.
- a varnish (varnish-like resin composition) having the composition shown in Table 1 was prepared in the same manner as in Example 1 except that 2.3 g of component a3 was used as a curing accelerator and no elastomer-containing epoxy resin was used. did. And it carried out similarly to Example 1, and performed each measurement while producing the sealing material. The measurement results are shown in Table 1.
- Example 3 802.2 g of component B1 is used as the inorganic filler, 96.1 g of component a11 and 24 g of component a13 are used as the epoxy resin, 76.1 g of component a23 is used as the curing agent, and 1.5 g of curing accelerator is used.
- a varnish (varnish-like resin composition) having the composition shown in Table 1 was prepared in the same manner as in Example 1 except that the component a3 was used and the elastomer-containing epoxy resin was not used. And it carried out similarly to Example 1, and performed each measurement while producing the sealing material. The measurement results are shown in Table 1.
- Example 4 1104 g of component B4 (inorganic filler, silica slurry) was placed in a 10 L polyethylene container, and the silica particles contained in component B4 were dispersed with a stirring blade to obtain a dispersion. Using this dispersion, 79.2 g of component a11 and 28.1 g of component a13 were used as the epoxy resin, 24.1 g of component a14 and 9 g of component a15 were used as the elastomer-containing epoxy resin, and 83.2 g of curing agent was used.
- component B4 inorganic filler, silica slurry
- a varnish (varnish-like resin composition) having the composition shown in Table 1 was prepared in the same manner as in Example 1 except that the component a23 was used and 1.7 g of the component a3 was used as a curing accelerator. And it carried out similarly to Example 1, and performed each measurement while producing the sealing material. The measurement results are shown in Table 1.
- Example 5> 688.9 g of component B1 is used as the inorganic filler, 129.3 g of component a11 and 55.1 g of component a13 are used as the epoxy resin, 124.3 g of component a22 is used as the curing agent, and 2.6.3 as the curing accelerator.
- a varnish (varnish-like resin composition) having the composition shown in Table 1 was prepared in the same manner as in Example 1 except that 3 g of the component a3 was used and the elastomer-containing epoxy resin was not used. And it carried out similarly to Example 1, and performed each measurement while producing the sealing material. The measurement results are shown in Table 1.
- the content of each component indicates the content based on the total mass (excluding the solvent) of the resin composition.
- Content (mass%) of component B4 shows content (mass%) of the silica particle in a silica slurry.
- the ratio (mass%) of the liquid resin indicates the ratio (mass%) of the liquid resin in the total mass (excluding the solvent) of the resin composition.
- the ratio (mass%) of the inorganic filler indicates the ratio (mass%) of the inorganic filler to the total mass (excluding the solvent) of the resin composition.
- SYMBOLS 1 Sealing material 10, 40 ... Electronic component, 20 ... Sealing part, 20a ... Resin layer, 30, 30a ... Metal layer, 50 ... Board
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
図1及び図2は、本実施形態に係る封止構造体を示す模式断面図である。本実施形態に係る封止構造体(封止成形物、電子部品装置)100a,100b,100c,100d,100eは、電子部品(第1の電子部品。第1層目の電子部品)10と、電子部品10を封止する封止部(樹脂硬化物)20と、封止部20上に配置された金属層30,30aと、を備える。金属層30は、パターニングされていない金属層であり、金属層30aは、所定のパターン形状を有する金属パターンである。 (Sealing structure)
FIG.1 and FIG.2 is a schematic cross section which shows the sealing structure which concerns on this embodiment. Sealed structures (sealed molded products, electronic component devices) 100a, 100b, 100c, 100d, and 100e according to the present embodiment include an electronic component (first electronic component, first layer electronic component) 10, and A sealing part (cured resin product) 20 that seals the
本実施形態に係る封止構造体(封止成形物、電子部品装置)の製造方法は、金属層と、前記金属層上に配置された樹脂層と、を備える封止材の前記樹脂層により電子部品(第1の電子部品)を封止する封止工程を備える。前記封止工程は、例えば、樹脂層を加熱して溶融させると共に、圧力を加えて電子部品を樹脂層で封止する工程であってもよい。 (Method for producing sealing structure)
The manufacturing method of the sealing structure (sealed molded product, electronic component device) according to the present embodiment includes the metal layer and the resin layer of the sealing material including the resin layer disposed on the metal layer. A sealing step of sealing the electronic component (first electronic component); The sealing step may be, for example, a step of heating and melting the resin layer and applying pressure to seal the electronic component with the resin layer.
本実施形態に係る封止材について説明する。本実施形態に係る封止材によれば、金属層をそのまま配線形成に利用できるため、電子部品を封止した後の配線形成プロセスを簡略化することができる。本実施形態に係る封止材によれば、被封止体(電子部品)上への樹脂の均一供給ができると共に発塵を低減することができる。 (Encapsulant)
The sealing material which concerns on this embodiment is demonstrated. According to the sealing material according to the present embodiment, since the metal layer can be used for wiring formation as it is, the wiring formation process after sealing the electronic component can be simplified. According to the sealing material according to the present embodiment, the resin can be uniformly supplied onto the object to be sealed (electronic component) and the generation of dust can be reduced.
封止材1の製造方法は、例えば、樹脂組成物を金属層30上に塗布して塗膜を形成する工程と、塗膜を加熱乾燥して樹脂層20aを形成する工程と、を備えていてもよい。塗布方法としては、特に限定されず、ダイコート、コンマコート等が挙げられる。加熱乾燥方法としては、熱風吹き付け等が挙げられる。 (Method for producing sealing material)
The manufacturing method of the sealing
a11:ビスフェノールF型エポキシ樹脂(三菱化学株式会社製、商品名:JER806、エポキシ当量:160)(25℃で液状である成分)
a12:ナフタレン骨格含有多官能固形エポキシ樹脂(DIC株式会社製、商品名:EXA-4750、エポキシ当量:182)(25℃で液状ではない成分)
a13:ナフタレン骨格含有多官能固形エポキシ樹脂(DIC株式会社製、商品名:HP-4710、エポキシ当量:170)(25℃で液状ではない成分) (Epoxy resin)
a11: Bisphenol F type epoxy resin (manufactured by Mitsubishi Chemical Corporation, trade name: JER806, epoxy equivalent: 160) (component that is liquid at 25 ° C.)
a12: Naphthalene skeleton-containing polyfunctional solid epoxy resin (manufactured by DIC Corporation, trade name: EXA-4750, epoxy equivalent: 182) (component not liquid at 25 ° C.)
a13: Naphthalene skeleton-containing polyfunctional solid epoxy resin (manufactured by DIC Corporation, trade name: HP-4710, epoxy equivalent: 170) (component not liquid at 25 ° C.)
a14:ブタジエンエラストマー粒子含有ビスフェノールF型液状エポキシ樹脂(株式会社カネカ製、商品名:MX-136、液状エポキシ樹脂の含有量:25質量%、エラストマー粒子の含有量:75質量%、エラストマー粒子の平均粒径:0.1μm)(25℃で液状の樹脂を含む成分)
a15:シリコーンエラストマー粒子含有液状エポキシ樹脂(ビスフェノールF型液状エポキシ樹脂及びビスフェノールA型液状エポキシ樹脂の混合物。株式会社カネカ製、商品名:MX-965、液状エポキシ樹脂の含有量:25質量%、エラストマー粒子の含有量:75質量%)(25℃で液状の樹脂を含む成分) (Elastomer-containing epoxy resin)
a14: butadiene elastomer particle-containing bisphenol F type liquid epoxy resin (manufactured by Kaneka Corporation, trade name: MX-136, liquid epoxy resin content: 25 mass%, elastomer particle content: 75 mass%, average of elastomer particles Particle size: 0.1 μm) (component containing resin that is liquid at 25 ° C.)
a15: Liquid epoxy resin containing silicone elastomer particles (mixture of bisphenol F type liquid epoxy resin and bisphenol A type liquid epoxy resin. Made by Kaneka Corporation, trade name: MX-965, content of liquid epoxy resin: 25% by mass, elastomer Particle content: 75% by mass) (component containing liquid resin at 25 ° C.)
a21:フェノールノボラック(旭有機材工業株式会社製、商品名:PAPS-PN2、フェノール性水酸基当量:104)(25℃で液状ではない成分)
a22:ナフタレンジオールノボラック(新日鉄住金化学株式会社製、商品名:SN-395)(25℃で液状ではない成分)
a23:フェノールノボラック(明和化成株式会社製、商品名:DL-92、フェノール性水酸基当量:103)(25℃で液状ではない成分) (Curing agent)
a21: Phenol novolak (Asahi Organic Materials Co., Ltd., trade name: PAPS-PN2, phenolic hydroxyl group equivalent: 104) (component not liquid at 25 ° C.)
a22: Naphthalene all-novolak (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., trade name: SN-395) (component not liquid at 25 ° C.)
a23: Phenol novolak (Madewa Kasei Co., Ltd., trade name: DL-92, phenolic hydroxyl group equivalent: 103) (component not liquid at 25 ° C.)
a3:イミダゾール(四国化成工業株式会社製、商品名:2P4MZ)(25℃で液状ではない成分) (Curing accelerator)
a3: Imidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name: 2P4MZ) (component that is not liquid at 25 ° C.)
B1:酸化アルミニウム粒子(住友化学株式会社製、商品名:AA-1.5、平均粒径:1.5μm)
B2:シリカ粒子(株式会社アドマテックス製、商品名:SC5500-SXE、フェニルアミノシラン処理、平均粒径:1.6μm)
B3:シリカ粒子(株式会社アドマテックス製、商品名:SC2500-SXJ、フェニルアミノシラン処理、平均粒径:0.5μm)
B4:シリカスラリー(株式会社アドマテックス製、商品名:SC2050-MTK、平均粒径:0.5μm、シリカ粒子の含有量:70.18質量%) (Inorganic filler)
B1: Aluminum oxide particles (manufactured by Sumitomo Chemical Co., Ltd., trade name: AA-1.5, average particle size: 1.5 μm)
B2: Silica particles (manufactured by Admatechs Co., Ltd., trade name: SC5500-SXE, phenylaminosilane treatment, average particle size: 1.6 μm)
B3: Silica particles (manufactured by Admatechs Co., Ltd., trade name: SC2500-SXJ, phenylaminosilane treatment, average particle size: 0.5 μm)
B4: Silica slurry (manufactured by Admatechs Co., Ltd., trade name: SC2050-MTK, average particle size: 0.5 μm, content of silica particles: 70.18% by mass)
D:メチルエチルケトン (Organic solvent)
D: Methyl ethyl ketone
(ワニスの調製)
表1に示す組成を有するワニス(ワニス状樹脂組成物)を以下のとおり調製した。10Lのポリエチレン製の容器に成分Dを100g入れた。次に、容器に成分B3を750.8g加えた後、撹拌羽根で成分B3を分散して分散液を得た。この分散液に、成分a11を90.1g、成分a13を31g、成分a14を24g、成分a15を9g、成分a21を93.1g加えた後に撹拌した。成分a21が溶解したことを確認した後、成分a3を1.9g加え、更に1時間撹拌した。得られた混合物をナイロン製#200メッシュ(開口径:75μm)でろ過した。ろ液を採取してワニスを得た。 <Example 1>
(Preparation of varnish)
A varnish (varnish-like resin composition) having the composition shown in Table 1 was prepared as follows. 100 g of component D was placed in a 10 L polyethylene container. Next, after adding 750.8g of component B3 to the container, the component B3 was disperse | distributed with the stirring blade, and the dispersion liquid was obtained. To this dispersion, 90.1 g of component a11, 31 g of component a13, 24 g of component a14, 9 g of component a15 and 93.1 g of component a21 were added and stirred. After confirming that component a21 was dissolved, 1.9 g of component a3 was added, and the mixture was further stirred for 1 hour. The obtained mixture was filtered through nylon # 200 mesh (opening diameter: 75 μm). The filtrate was collected to obtain a varnish.
塗工機を使用して銅箔(日本電解株式会社製、商品名:YGP-35R、銅箔厚み:35μm)上に前記ワニスを塗布して塗膜を得た後に塗膜を乾燥させて、銅箔上に樹脂層を形成した。塗布及び乾燥は、下記条件で行った。乾燥後の樹脂層の厚みは20μmであった。樹脂層の銅箔とは反対側に50μm厚の保護層(ポリエチレンテレフタレートフィルム)を配置することにより封止材Aを得た。なお、下記の各測定においては、保護層を剥離した上で測定を行った。
塗工機:株式会社ヒラノテクシード製のダイコータ
塗布ヘッド方式:ダイ
塗布及び乾燥速度:5m/分
乾燥条件(温度/炉長):60℃/3.3m、90℃/3.3m、110℃/3.3m (Preparation of sealing material A)
Applying the varnish on a copper foil (trade name: YGP-35R, copper foil thickness: 35 μm) by using a coating machine to obtain a coating film, drying the coating film, A resin layer was formed on the copper foil. Application and drying were performed under the following conditions. The thickness of the resin layer after drying was 20 μm. Sealing material A was obtained by disposing a 50 μm thick protective layer (polyethylene terephthalate film) on the opposite side of the resin layer from the copper foil. In each of the following measurements, the measurement was performed after the protective layer was peeled off.
Coating machine: Die coater manufactured by Hirano Techseed Co., Ltd. Coating head method: Die coating and drying speed: 5 m / min Drying conditions (temperature / furnace length): 60 ° C./3.3 m, 90 ° C./3.3 m, 110 ° C./3 .3m
塗布及び乾燥速度を1m/分に変更したこと以外は、封止材Aの作製と同様にして封止材Bを作製した。乾燥後の樹脂層の厚みは200μmであった。 (Preparation of encapsulant B)
A sealing material B was prepared in the same manner as the sealing material A except that the coating and drying speed was changed to 1 m / min. The thickness of the resin layer after drying was 200 μm.
(1)樹脂層の最低溶融粘度
封止材Aの樹脂層の最低溶融粘度を、レオメータを用いて以下の手順で測定した。まず、銅箔から樹脂層を0.6g剥がし取り、圧縮成形機にて直径2cmのタブレットに成形した。このタブレットの粘度を以下の条件にて測定した。40℃から200℃まで温度を昇温しながら粘度を測定し、最も低い粘度を最低溶融粘度とした。樹脂層の溶融粘度が低い場合、電子部品を容易に封止できる。測定結果を表1に示す。 (Evaluation)
(1) Minimum melt viscosity of resin layer The minimum melt viscosity of the resin layer of the sealing material A was measured by the following procedure using a rheometer. First, 0.6 g of the resin layer was peeled off from the copper foil and formed into a tablet having a diameter of 2 cm using a compression molding machine. The viscosity of this tablet was measured under the following conditions. The viscosity was measured while raising the temperature from 40 ° C. to 200 ° C., and the lowest viscosity was defined as the lowest melt viscosity. When the melt viscosity of the resin layer is low, the electronic component can be easily sealed. The measurement results are shown in Table 1.
測定装置:レオメータ、TAインスツルメントジャパン株式会社製、商品名:ARES-G2
測定モード:Dynamic Temperature Ramp
周波数:1.0Hz
温度範囲:40~200℃
昇温速度:5℃/分 [Measurement condition]
Measuring device: Rheometer, manufactured by TA Instruments Japan Co., Ltd., trade name: ARES-G2
Measurement mode: Dynamic Temperature Ramp
Frequency: 1.0Hz
Temperature range: 40-200 ° C
Temperature increase rate: 5 ° C / min
封止材Aの樹脂層がシリコンウェハ(厚み:775μm)に接するように下記ラミネート条件で封止材Aをシリコンウェハにラミネートした。次に、前記シリコンウェハをSUS板に固定した後、下記硬化条件で樹脂層を熱硬化させた。続いて、銅箔の表面に幅5mmのマイラーテープを5cm以上の長さになるように3本貼り付け、銅箔の一部をエッチング除去した。次いで、下記条件で銅箔と硬化後の樹脂層との間の接着強度を測定した。銅箔と硬化後の樹脂層との接着強度が良好である場合、配線を形成するプロセス中に配線が封止構造体から剥離することを容易に防止できる。測定結果を表1に示す。 (2) Adhesiveness between copper foil and cured resin layer Sealing material A was laminated to a silicon wafer under the following laminating conditions so that the resin layer of sealing material A was in contact with the silicon wafer (thickness: 775 μm). Next, after fixing the silicon wafer to the SUS plate, the resin layer was thermally cured under the following curing conditions. Subsequently, three Mylar tapes having a width of 5 mm were attached to the surface of the copper foil so as to have a length of 5 cm or more, and a part of the copper foil was removed by etching. Next, the adhesive strength between the copper foil and the cured resin layer was measured under the following conditions. When the adhesive strength between the copper foil and the cured resin layer is good, the wiring can be easily prevented from peeling off from the sealing structure during the process of forming the wiring. The measurement results are shown in Table 1.
ラミネータ装置:株式会社名機製作所製、真空加圧ラミネータMVLP-500
ラミネート温度:110℃
ラミネート圧力:0.5MPa
真空引き時間:30秒
ラミネート時間:40秒 [Lamination condition]
Laminator: Vacuum pressure laminator MVLP-500 manufactured by Meiki Seisakusho Co., Ltd.
Lamination temperature: 110 ° C
Lamination pressure: 0.5 MPa
Vacuuming time: 30 seconds Laminating time: 40 seconds
オーブン:エスペック株式会社製、SAFETY OVEN SPH-201
オーブン温度:140℃
時間:60分 [Curing conditions]
Oven: SAFETY OVEN SPH-201, manufactured by ESPEC Corporation
Oven temperature: 140 ° C
Time: 60 minutes
接着強度測定装置:株式会社島津製作所製、EZTest/CE
引っ張り速度:5cm/分 [Measurement conditions for adhesive strength]
Adhesive strength measuring device: EZTest / CE, manufactured by Shimadzu Corporation
Pulling speed: 5cm / min
封止材Bの樹脂層が12インチサイズのシリコンウェハ(厚み:800μm)に接するように下記ラミネート条件で封止材Bをシリコンウェハにラミネートした。次に、下記硬化条件で樹脂層を熱硬化して樹脂硬化体を得た。続いて、前記樹脂硬化体の反り量を反り測定ステージ装置(コムス株式会社製、商品名:CP-500)及び反り測定レーザー光装置(株式会社キーエンス製、商品名:LK-030)を用いて測定した。測定結果を表1に示す。 (3) Warpage of Sealing Structure Sealing material B was laminated to a silicon wafer under the following lamination conditions so that the resin layer of sealing material B was in contact with a 12-inch size silicon wafer (thickness: 800 μm). Next, the resin layer was thermally cured under the following curing conditions to obtain a cured resin body. Subsequently, the amount of warpage of the cured resin body was measured using a warpage measurement stage device (trade name: CP-500, manufactured by Combs Co., Ltd.) and a warpage measurement laser device (trade name: LK-030, manufactured by Keyence Corporation). It was measured. The measurement results are shown in Table 1.
ラミネータ装置:株式会社名機製作所製、真空加圧ラミネータMVLP-500
ラミネート温度:90℃
ラミネート圧力:0.5MPa
真空引き時間:30秒
ラミネート時間:40秒 [Lamination condition]
Laminator: Vacuum pressure laminator MVLP-500 manufactured by Meiki Seisakusho Co., Ltd.
Lamination temperature: 90 ° C
Lamination pressure: 0.5 MPa
Vacuuming time: 30 seconds Laminating time: 40 seconds
オーブン:エスペック株式会社製、SAFETY OVEN SPH-201
オーブン温度:140℃
時間:120分 [Curing conditions]
Oven: SAFETY OVEN SPH-201, manufactured by ESPEC Corporation
Oven temperature: 140 ° C
Time: 120 minutes
無機充填材として689.6gの成分B1を用い、エポキシ樹脂として130.5gの成分a11、37.1gの成分a12及び17.1gの成分a13を用い、硬化剤として123.5gの成分a22を用い、硬化促進剤として2.3gの成分a3を用い、エラストマー含有エポキシ樹脂を用いなかったこと以外は実施例1と同様にして、表1に示す組成を有するワニス(ワニス状樹脂組成物)を調製した。そして、実施例1と同様にして、封止材を作製すると共に各測定を行った。測定結果を表1に示す。 <Example 2>
689.6 g of component B1 is used as the inorganic filler, 130.5 g of component a11, 37.1 g of component a12 and 17.1 g of component a13 are used as the epoxy resin, and 123.5 g of component a22 is used as the curing agent. A varnish (varnish-like resin composition) having the composition shown in Table 1 was prepared in the same manner as in Example 1 except that 2.3 g of component a3 was used as a curing accelerator and no elastomer-containing epoxy resin was used. did. And it carried out similarly to Example 1, and performed each measurement while producing the sealing material. The measurement results are shown in Table 1.
無機充填材として802.2gの成分B1を用い、エポキシ樹脂として96.1gの成分a11及び24gの成分a13を用い、硬化剤として76.1gの成分a23を用い、硬化促進剤として1.5gの成分a3を用い、エラストマー含有エポキシ樹脂を用いなかったこと以外は実施例1と同様にして、表1に示す組成を有するワニス(ワニス状樹脂組成物)を調製した。そして、実施例1と同様にして、封止材を作製すると共に各測定を行った。測定結果を表1に示す。 <Example 3>
802.2 g of component B1 is used as the inorganic filler, 96.1 g of component a11 and 24 g of component a13 are used as the epoxy resin, 76.1 g of component a23 is used as the curing agent, and 1.5 g of curing accelerator is used. A varnish (varnish-like resin composition) having the composition shown in Table 1 was prepared in the same manner as in Example 1 except that the component a3 was used and the elastomer-containing epoxy resin was not used. And it carried out similarly to Example 1, and performed each measurement while producing the sealing material. The measurement results are shown in Table 1.
10Lのポリエチレン製の容器に成分B4(無機充填材、シリカスラリー)を1104g入れ、成分B4に含まれるシリカ粒子を撹拌羽根で分散して分散液を得た。この分散液を用い、エポキシ樹脂として79.2gの成分a11及び28.1gの成分a13を用い、エラストマー含有エポキシ樹脂として24.1gの成分a14及び9gの成分a15を用い、硬化剤として83.2gの成分a23を用い、硬化促進剤として1.7gの成分a3を用いたこと以外は実施例1と同様にして、表1に示す組成を有するワニス(ワニス状樹脂組成物)を調製した。そして、実施例1と同様にして、封止材を作製すると共に各測定を行った。測定結果を表1に示す。 <Example 4>
1104 g of component B4 (inorganic filler, silica slurry) was placed in a 10 L polyethylene container, and the silica particles contained in component B4 were dispersed with a stirring blade to obtain a dispersion. Using this dispersion, 79.2 g of component a11 and 28.1 g of component a13 were used as the epoxy resin, 24.1 g of component a14 and 9 g of component a15 were used as the elastomer-containing epoxy resin, and 83.2 g of curing agent was used. A varnish (varnish-like resin composition) having the composition shown in Table 1 was prepared in the same manner as in Example 1 except that the component a23 was used and 1.7 g of the component a3 was used as a curing accelerator. And it carried out similarly to Example 1, and performed each measurement while producing the sealing material. The measurement results are shown in Table 1.
無機充填材として688.9gの成分B1を用い、エポキシ樹脂として129.3gの成分a11及び55.1gの成分a13を用い、硬化剤として124.3gの成分a22を用い、硬化促進剤として2.3gの成分a3を用い、エラストマー含有エポキシ樹脂を用いなかったこと以外は実施例1と同様にして、表1に示す組成を有するワニス(ワニス状樹脂組成物)を調製した。そして、実施例1と同様にして、封止材を作製すると共に各測定を行った。測定結果を表1に示す。 <Example 5>
688.9 g of component B1 is used as the inorganic filler, 129.3 g of component a11 and 55.1 g of component a13 are used as the epoxy resin, 124.3 g of component a22 is used as the curing agent, and 2.6.3 as the curing accelerator. A varnish (varnish-like resin composition) having the composition shown in Table 1 was prepared in the same manner as in Example 1 except that 3 g of the component a3 was used and the elastomer-containing epoxy resin was not used. And it carried out similarly to Example 1, and performed each measurement while producing the sealing material. The measurement results are shown in Table 1.
無機充填材として691.1gの成分B1、51.1gの成分B2及び74.1gの成分B3を用い、エポキシ樹脂として89.1gの成分a11及び22gの成分a12を用い、硬化剤として71.1gの成分a21を用い、硬化促進剤として1.4gの成分a3を用い、エラストマー含有エポキシ樹脂を用いなかったこと以外は実施例1と同様にして、表1に示す組成を有するワニス(ワニス状樹脂組成物)を調製した。そして、実施例1と同様にして、封止材を作製すると共に各測定を行った。測定結果を表1に示す。 <Example 6>
691.1 g of component B1, 51.1 g of component B2 and 74.1 g of component B3 are used as the inorganic filler, 89.1 g of component a11 and 22 g of component a12 are used as the epoxy resin, and 71.1 g as the curing agent. A varnish (varnish-like resin) having the composition shown in Table 1 was used in the same manner as in Example 1 except that 1.4 g of component a3 was used as a curing accelerator and no elastomer-containing epoxy resin was used. Composition) was prepared. And it carried out similarly to Example 1, and performed each measurement while producing the sealing material. The measurement results are shown in Table 1.
Claims (12)
- 金属層と、前記金属層上に配置された樹脂層と、を備える封止材の前記樹脂層により第1の電子部品を封止する封止工程を備える、封止構造体の製造方法。 The manufacturing method of a sealing structure provided with the sealing process of sealing a 1st electronic component with the said resin layer of the sealing material provided with a metal layer and the resin layer arrange | positioned on the said metal layer.
- 前記第1の電子部品が複数である、請求項1に記載の封止構造体の製造方法。 The method for manufacturing a sealing structure according to claim 1, wherein the first electronic component is plural.
- 前記封止工程の後に、前記金属層をパターニングして金属パターンを得る工程を更に備える、請求項1又は2に記載の封止構造体の製造方法。 The manufacturing method of the sealing structure of Claim 1 or 2 further equipped with the process of patterning the said metal layer and obtaining a metal pattern after the said sealing process.
- 前記封止工程の前に、前記金属層として金属パターンを得る工程を更に備える、請求項1又は2に記載の封止構造体の製造方法。 The method for manufacturing a sealing structure according to claim 1 or 2, further comprising a step of obtaining a metal pattern as the metal layer before the sealing step.
- 前記封止工程の後に、前記金属層の前記樹脂層とは反対側に第2の電子部品を配置する工程を更に備える、請求項1~4のいずれか一項に記載の封止構造体の製造方法。 The sealing structure according to any one of claims 1 to 4, further comprising a step of arranging a second electronic component on the opposite side of the metal layer from the resin layer after the sealing step. Production method.
- 前記封止工程の後に、前記第1の電子部品、前記樹脂層及び前記金属層を備える構造体をダイシングする工程を更に備える、請求項1~5のいずれか一項に記載の封止構造体の製造方法。 The sealing structure according to any one of claims 1 to 5, further comprising a step of dicing the structure including the first electronic component, the resin layer, and the metal layer after the sealing step. Manufacturing method.
- 金属層と、前記金属層上に配置された樹脂層と、を備え、
前記樹脂層により電子部品を封止するために用いられる、封止材。 A metal layer, and a resin layer disposed on the metal layer,
The sealing material used in order to seal an electronic component with the said resin layer. - 前記金属層が金属パターンである、請求項7に記載の封止材。 The sealing material according to claim 7, wherein the metal layer is a metal pattern.
- 第1の電子部品と、前記第1の電子部品を封止する封止部と、前記封止部上に配置された金属層と、を備える、封止構造体。 A sealing structure including a first electronic component, a sealing portion that seals the first electronic component, and a metal layer disposed on the sealing portion.
- 前記金属層が金属パターンである、請求項9に記載の封止構造体。 The sealing structure according to claim 9, wherein the metal layer is a metal pattern.
- 前記第1の電子部品を複数備える、請求項9又は10に記載の封止構造体。 The sealing structure according to claim 9 or 10, comprising a plurality of the first electronic components.
- 前記金属層の前記封止部とは反対側に第2の電子部品を更に備える、請求項9~11のいずれか一項に記載の封止構造体。 The sealing structure according to any one of claims 9 to 11, further comprising a second electronic component on a side opposite to the sealing portion of the metal layer.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018518859A JP6705501B2 (en) | 2016-05-25 | 2016-05-25 | Manufacturing method of sealing structure |
KR1020187033617A KR20190010560A (en) | 2016-05-25 | 2016-05-25 | An encapsulating structure, a manufacturing method thereof, |
PCT/JP2016/065434 WO2017203622A1 (en) | 2016-05-25 | 2016-05-25 | Sealing structure, method for manufacturing same, and sealing material |
CN201680085878.7A CN109155256B (en) | 2016-05-25 | 2016-05-25 | Sealing structure, method for producing same, and sealing material |
KR1020237041262A KR20230165396A (en) | 2016-05-25 | 2016-05-25 | Sealing structure, method for manufacturing same, and sealing material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2016/065434 WO2017203622A1 (en) | 2016-05-25 | 2016-05-25 | Sealing structure, method for manufacturing same, and sealing material |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017203622A1 true WO2017203622A1 (en) | 2017-11-30 |
Family
ID=60411719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/065434 WO2017203622A1 (en) | 2016-05-25 | 2016-05-25 | Sealing structure, method for manufacturing same, and sealing material |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6705501B2 (en) |
KR (2) | KR20190010560A (en) |
CN (1) | CN109155256B (en) |
WO (1) | WO2017203622A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019124924A1 (en) * | 2017-12-18 | 2019-06-27 | 주식회사 엘지화학 | Composition for encapsulation |
JP2019160868A (en) * | 2018-03-08 | 2019-09-19 | 日東電工株式会社 | Sheet for sealing |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102455146B1 (en) * | 2020-02-10 | 2022-10-17 | 주식회사 나노인 | Reversible Coating Method for Encapsulating and Filling Structures on Substrates |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006120943A (en) * | 2004-10-22 | 2006-05-11 | Shinko Electric Ind Co Ltd | Chip built-in substrate and its manufacturing method |
JP2010239150A (en) * | 2003-09-09 | 2010-10-21 | Sanyo Electric Co Ltd | Semiconductor module and its manufacturing method |
JP2014229771A (en) * | 2013-05-23 | 2014-12-08 | 日東電工株式会社 | Method for manufacturing electronic component device, laminated sheet, and electronic component device |
JP2015185615A (en) * | 2014-03-20 | 2015-10-22 | 株式会社東芝 | Semiconductor device and electronic circuit device |
JP2016092275A (en) * | 2014-11-07 | 2016-05-23 | 信越化学工業株式会社 | Electromagnetic wave-shielding support base-attached sealing material, sealed semiconductor element-mounted substrate, sealed semiconductor element-formed wafer, and semiconductor device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS616615A (en) | 1984-06-20 | 1986-01-13 | Nippon Sheet Glass Co Ltd | Distributed refractive index type lens |
JP2001127095A (en) | 1999-10-29 | 2001-05-11 | Shinko Electric Ind Co Ltd | Semiconductor device and its manufacturing method |
JP2001244372A (en) | 2000-03-01 | 2001-09-07 | Seiko Epson Corp | Semiconductor device and its manufacturing method |
JP3616615B2 (en) | 2002-06-06 | 2005-02-02 | 沖電気工業株式会社 | Manufacturing method of semiconductor device |
JP6135202B2 (en) * | 2013-03-08 | 2017-05-31 | 日立化成株式会社 | Semiconductor device and manufacturing method of semiconductor device |
-
2016
- 2016-05-25 CN CN201680085878.7A patent/CN109155256B/en active Active
- 2016-05-25 WO PCT/JP2016/065434 patent/WO2017203622A1/en active Application Filing
- 2016-05-25 KR KR1020187033617A patent/KR20190010560A/en not_active Application Discontinuation
- 2016-05-25 KR KR1020237041262A patent/KR20230165396A/en not_active Application Discontinuation
- 2016-05-25 JP JP2018518859A patent/JP6705501B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010239150A (en) * | 2003-09-09 | 2010-10-21 | Sanyo Electric Co Ltd | Semiconductor module and its manufacturing method |
JP2006120943A (en) * | 2004-10-22 | 2006-05-11 | Shinko Electric Ind Co Ltd | Chip built-in substrate and its manufacturing method |
JP2014229771A (en) * | 2013-05-23 | 2014-12-08 | 日東電工株式会社 | Method for manufacturing electronic component device, laminated sheet, and electronic component device |
JP2015185615A (en) * | 2014-03-20 | 2015-10-22 | 株式会社東芝 | Semiconductor device and electronic circuit device |
JP2016092275A (en) * | 2014-11-07 | 2016-05-23 | 信越化学工業株式会社 | Electromagnetic wave-shielding support base-attached sealing material, sealed semiconductor element-mounted substrate, sealed semiconductor element-formed wafer, and semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019124924A1 (en) * | 2017-12-18 | 2019-06-27 | 주식회사 엘지화학 | Composition for encapsulation |
US11479664B2 (en) | 2017-12-18 | 2022-10-25 | Lg Chem, Ltd. | Encapsulating composition |
JP2019160868A (en) * | 2018-03-08 | 2019-09-19 | 日東電工株式会社 | Sheet for sealing |
Also Published As
Publication number | Publication date |
---|---|
JP6705501B2 (en) | 2020-06-03 |
CN109155256B (en) | 2022-06-24 |
KR20230165396A (en) | 2023-12-05 |
KR20190010560A (en) | 2019-01-30 |
JPWO2017203622A1 (en) | 2019-03-22 |
CN109155256A (en) | 2019-01-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102359868B1 (en) | Film-like epoxy resin composition, method of producing film-like epoxy resin composition, and method of producing semiconductor device | |
JP6749887B2 (en) | Sealing film and electronic component device using the same | |
JP7115520B2 (en) | Sealing film and sealing structure | |
JPWO2016125350A1 (en) | Epoxy resin composition, film-like epoxy resin composition, cured product, and electronic device | |
JP6705501B2 (en) | Manufacturing method of sealing structure | |
TWI733014B (en) | Manufacturing method of sealing film, electronic part device, and electronic part device | |
JP6834265B2 (en) | Manufacturing method of sealing structure, sealing material and cured product | |
JP7070559B2 (en) | Encapsulating film and encapsulation structure, and methods for manufacturing these | |
JP7354666B2 (en) | Sealing film, sealing structure, and method for manufacturing the sealing structure | |
JP2018064054A (en) | Encapsulation material, and manufacturing method of encapsulation structure | |
WO2016204182A1 (en) | Thermosetting resin composition, cured material, resin sheet, sealing structure and method for manufacturing same, and electronic component device and method for manufacturing same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2018518859 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20187033617 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16903104 Country of ref document: EP Kind code of ref document: A1 |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 16903104 Country of ref document: EP Kind code of ref document: A1 |