WO2017203211A1 - Matériaux piézo-électriques/électrostrictifs sans plomb, stables à la température, présentant une résistance à la fatigue améliorée - Google Patents

Matériaux piézo-électriques/électrostrictifs sans plomb, stables à la température, présentant une résistance à la fatigue améliorée Download PDF

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Publication number
WO2017203211A1
WO2017203211A1 PCT/GB2017/051383 GB2017051383W WO2017203211A1 WO 2017203211 A1 WO2017203211 A1 WO 2017203211A1 GB 2017051383 W GB2017051383 W GB 2017051383W WO 2017203211 A1 WO2017203211 A1 WO 2017203211A1
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Prior art keywords
piezoelectric
lead
electrostrictive
ceramic material
free piezoelectric
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PCT/GB2017/051383
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English (en)
Inventor
Ian Michael Reaney
Amir KHESRO
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Johnson Matthey Piezo Products Gmbh
Nunn, Andrew Dominic
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Publication of WO2017203211A1 publication Critical patent/WO2017203211A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/475—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on bismuth titanates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8561—Bismuth-based oxides

Definitions

  • the present invention relates to temperature stable lead-free piezoelectric and/or electrostrictive materials with enhanced fatigue resistance based on compositions containing an end member of potassium bismuth titanate together with a rare earth and titanium doped bismuth ferrite.
  • Piezoelectric ceramic materials have been widely used in applications such as actuators, transducers, resonators, sensors, and random access memories.
  • a piezoelectric actuator utilises the so-called inverse piezoelectric effect, in which an electrical signal is converted into a precisely controlled mechanical strain.
  • the ability to control physical displacements with high precision makes piezoelectric actuators important for many applications such as cameras, phones, microscopes, fuel injectors, micro-pumps, ink cartridges and medical surgery instruments.
  • a bending transducer can also be used as an energy harvester, whereby an electrical charge is generated within a piezoelectric ceramic material resulting from an applied mechanical force (the so-called piezoelectric effect).
  • PZT lead zirconate titanate
  • its related solid solutions are the most widely used, e.g. for actuators, due to their excellent piezoelectric properties including their large piezoelectric and electromechanical coupling coefficients, ease of fabrication and cost and the ease with which modifications by doping can be made during manufacturing.
  • drawbacks to using PZT which limit its desirability in many applications.
  • One concern is its possible environmental effect due to the toxicity of highly volatile PbO which can evolve from PZT during fabrication.
  • Another drawback of PZT piezoceramics is the strong fatigue behaviour. Fatigue is a phenomenon in which a piezoelectric material loses its switchable polarization and electromechanical strain during cyclic electrical loading.
  • Many technological devices such as fuel injectors have harsh operating environment well above room temperature and hence the temperature stability of electromechanical strain is very important.
  • Electrostriction is a property of all dielectric materials, and is caused by a slight displacement of ions in the crystal lattice upon being exposed to an external electric field. Positive ions will be displaced in the direction of the field, while negative ions will be displaced in the opposite direction. This displacement will accumulate throughout the bulk material and result in an overall strain (elongation) in the direction of the field. All insulating materials consisting of more than one type of atoms will be ionic to some extent due to the difference of electronegativity of the atoms, and therefore exhibit electrostriction. The resulting strain (ratio of deformation to the original dimension) is proportional to the square of the polarization. The related piezoelectric effect occurs only in a particular class of dielectrics.
  • Electrostriction applies to all crystal symmetries, while the piezoelectric effect only applies to the 20 piezoelectric point groups. Electrostriction is a quadratic effect, unlike piezoelectricity, which is a linear effect. Electrostrictors have application as actuators requiring relatively small displacements.
  • KBT K 0. 5Bo . 5Ti03
  • KBT-BF potassium bismuth titanate-bismuth ferrite
  • the Smax/Emax value is important, where S maK is the positive strain at the applied field E ma x-
  • the inventors have investigated KBT-BF materials and have discovered, very surprisingly, that by doping these materials with certain rare earth (RE) elements, the piezoelectric properties of the materials can be enhanced.
  • the RE doped KBT- BF materials show particularly good fatigue behaviour and temperature stability.
  • Rare Earth elements is one of a set of seventeen chemical elements in the periodic table, specifically the fifteen lanthanides as well as scandium and yttrium. Promethium is radioactive and is not intended for use in the present invention.
  • the non-radioactive RE elements are: scandium (Sc), yttrium (Y), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysproprium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb) and lutetium (Lu).
  • the invention provides a lead-free piezoelectric and/or electrostrictive ceramic material having the general formula:
  • the non-radioactive rare earth element is La, Nd, Pr and/or Sm.
  • the relative proportions of the components of the lead-free ceramic materials according to the invention may be varied during their production so that the products will have a specified operating temperature range. Depending upon the desired end use of the composition, the operating temperature of the ceramic product may differ from the peak maximum in permittivity (T m ; see Example 3 hereinbelow for an explanation) of the lead-free piezoelectric ceramic materials according to the invention.
  • T m peak maximum in permittivity
  • the relative amounts or proportions of the components in the lead-free piezoelectric materials according to the invention are expressed in terms of mole fraction or mole percent (mol%).
  • compositions represent the basic range of stability of the binary compositions with a stable perovskite phase at standard atmospheric conditions, i.e. cubic lattice structures with general formula of AB0 3 , wherein A is a A-site ion located on the corners of the lattice and B is a B-site ion on the centre of the lattice and is a 3d, 4d or 5d transition metal.
  • the bismuth end member of the series is composed of BiFe0 3 - REFe0 3 and RE 2/3 Ti0 3 , which can be expressed e.g. as (1-x) Ko . sBio . sTiC - x[Bi(RE)Fe0.97(Ti0.03)O 3 ].
  • the intention of adding both RE 3+ on the A-site and Ti 4+ on the B-site was to decrease conductivity and loss and permit the materials to operate well at high temperature and field.
  • the inventors consider that the fatigue and temperature stability of the lead-free piezoelectric/electrostrictive ceramic materials according to the invention are particularly good. However, the d 3 i and k p of the claimed materials are considered less important because the high strain achieved in these materials is predominantly electrostrictive.
  • the lead-free piezoelectric ceramic material may be advantageous.
  • Some of the lead-free piezo electric ceramic compositions according to the invention will meet or exceed the piezoelectric properties of doped PZT materials, and will provide a constant strain from room temperature to 300 °C with minimal or no degradation over the life of a device employing such material.
  • Some of the lead-free piezo electric ceramic compositions according to the invention are predicted to have similar potential uses as PZT materials such as in actuators. Some of these applications will further benefit from the absence of lead in the piezoelectric ceramics.
  • the lead-free piezoelectric and/or electrostnctive ceramic material according to the invention has the general chemical formula (1-x) Ko . sBio . sTiC - x[Bi(RE)Fe0.97(Ti0.03)O 3 ], such as (1-x) K 0. 5Bio .5 Ti0 3 - x[Bi(RE)Fe0.97(Ti0.03)O 3 ], wherein 0.01 ⁇ x ⁇ 0.25.
  • the invention is exemplified herein by use of the rare earth elements lanthanum (La) - referred to herein as KBLFT - and neodymium (Nd) - referred to herein as KB FT - which are preferred.
  • the RE component of the piezoelectric ceramic material according to the invention comprises mixtures of one or more rare earth element.
  • RE in the lead-free piezoelectric and/or electrostrictive ceramic material according to the invention is Nd and wherein 0.03 ⁇ x ⁇ 0.15, particularly preferably wherein 0.06 ⁇ x ⁇ 0.12 and most preferably wherein x is 0.09.
  • RE in the lead-free piezoelectric and/or electrostrictive ceramic material according to the invention is La, preferably 0.02 ⁇ x ⁇ 0.15, particularly preferably 0.06 ⁇ x ⁇ 0.12 and most preferably x is 0.10.
  • the invention provides a piezoelectric and/or electrostrictive element comprising a lead-free piezoelectric and/or electrostrictive ceramic material according to the invention disposed on a substrate and having an electrode attached to the piezoelectric ceramic material.
  • the invention provides a multilayer stack of two or more piezoelectric and/or electrostrictive elements for use as multi-layered actuator devices, each element comprising a layer of lead-free piezoelectric and/or electrostrictive ceramic material according to the first aspect of the invention and an electrode layer applied to the lead-free piezoelectric and/or electrostrictive ceramic material.
  • the piezoelectric and/or electrostrictive element or multilayer stack of two or more piezoelectric and/or electrostrictive elements according to the second or third aspects of the invention can be used as a transducer, a sensor, a loudspeaker, an audio amplifier, an energy harvester in a hand held device, such as a medical dispenser, e.g. an, an actuator in a camera, mobile phone, microscope, fuel injector, micro-pump, ink cartridge, valve, medical surgery instrument, braille reader, Jacquard knitting machine, cool mist generator etc.
  • a medical dispenser e.g. an, an actuator in a camera, mobile phone, microscope, fuel injector, micro-pump, ink cartridge, valve, medical surgery instrument, braille reader, Jacquard knitting machine, cool mist generator etc.
  • the substrate is a flexible substrate, preferably a fatigue resistant flexible substrate such as a carbon-fibre- reinforced plastic (CRP).
  • a fatigue resistant flexible substrate such as a carbon-fibre- reinforced plastic (CRP).
  • the substrate is a solid, e.g. a ceramic disc.
  • the invention provides the use of a piezoelectric and/or electrostrictive ceramic element according to the second aspect of the invention or a multilayer stack of two or more piezoelectric and/or electrostrictive elements according to the third aspect of the invention as an actuator or a bending transducer.
  • the invention provides the use of a piezoelectric and/or electrostrictive ceramic material according to the first aspect of the invention in the manufacture of a piezoelectric and/or electrostrictive element according to the second aspect of the invention or a multilayer stack of two or more piezoelectric and/or electrostrictive elements according to the third aspect of the invention.
  • the invention provides a method of making a multilayer stack of two or more piezoelectric and/or electrostrictive elements according to the fourth aspect of the invention by casting, e.g. from a slurry, a layer of the lead-free piezoelectric and/or electrostrictive ceramic material according to the first aspect of the invention onto a carrier film, applying an electrode material, e.g.
  • T c urie temperature
  • a piezoelectric ceramic material is generally limited in use to approximately 80-100°C below its Curie temperature. Accordingly, preferred Curie temperatures are >200°C. However, Curie temperatures that are too high result in d 33 that is impractically low.
  • the temperature corresponding to the maximum of the dielectric constant is called the "temperature T m ". See also the explanation in Example 3 hereinbelow.
  • polarization hysteresis refers to lead-free piezoelectric ceramic materials that display non-linear polarization characteristics indicative of a polar state.
  • k refers to the electromechanical coupling factor and is an indicator of the effectiveness with which a piezoelectric material converts electrical energy into mechanical energy, or converts mechanical energy into electrical energy.
  • the planar coupling factor, k p expresses radial coupling - the coupling between an electric field parallel to the direction in which the ceramic element is polarized (direction 3) and mechanical effects that produce radial vibrations, relative to the direction of polarization (direction 1 and direction 2).
  • electromechanical strain refers to an electric field induced strain and is commonly expressed in terms of one or more piezoelectric coefficients (d 33 and d 3 i, for example), where d (units pm/V) is the tensor property that relates the strain to the applied electric field (V/m).
  • the d 33 coefficient can be measured in many different ways, such a piezoelectric resonance, the direct piezoelectric effect, the indirect piezoelectric effect, and others.
  • An example of its use is given in Y. Hiruma et al, J. Appl. Phys. 103:084121 (2008).
  • d 33 refers to the induced polarization in direction 3 (parallel to direction in which ceramic element is polarized) per unit stress applied in direction 3 or induced strain in direction 3 per unit electric field applied in direction 3.
  • d 31 refers to induced polarization in direction 3 (parallel to direction in which ceramic element is polarized) per unit stress applied in direction 1 (perpendicular to direction in which ceramic element is polarized) or induced strain in direction 1 per unit electric field applied in direction 3.
  • fatigue refers to the observed loss of polarization and electromechanical strain after the application of a cyclic electric field.
  • polarization remanence refers to the polarization measured at zero field during a polarization hysteresis measurement. It is a unique characteristic of polar, nonlinear dielectrics.
  • a bipolar strain loop for data recorded on the first test cycle is overlaid with data for the same material after 10 6 cycles.
  • Attritor System Union Process, Arkon, Ohio, USA
  • 3 mm diameter yttria-stabilised zirconia media in isopropanol at 300 rpm.
  • the slurry was separated from media and dried overnight at 80 °C in an oven under extraction.
  • the mixed dried powders were then sieved through 300 micron mesh and reacted 800 °C for 4 hours in a muffle furnace
  • the production method may be modified to include chemical solution deposition using chemical precursors such bismuth nitrate, titanium isopropoxide etc., or sputtering using solid state sintered or hot-pressed ceramic targets. Any suitable sputtering or chemical deposition method may be used for this purpose.
  • the resulting thin film ceramic may have a thickness in the range of about 50 nm to about 10 ⁇ , in some cases.
  • the lead-free piezoelectric ceramic materials according to the invention can be modified for this purpose.
  • the ceramic powder is ground or milled to the desired particle size and loaded into polymer matrix to create a 0-3 piezoelectric composite.
  • the ceramic powder can be formed into sintered rods or fibres using injection moulding or similar technique and loaded into a polymer matrix to create a 1-3 piezoelectric composite.
  • the polymer may be piezoelectric, such as PVDF, or non-piezoelectric such as epoxy depending on the final application.
  • Example 2 XRD (X-ray diffraction)
  • sample is exposed to monochromatic incident X-rays at different angles and intensities of diffracted peaks from randomly oriented crystallites are recorded.
  • sintered pellets were polished and then annealed at 500°C overnight to reduce the mechanical stresses produced during polishing.
  • Room temperature XRD data was collected using Bruker D2 Phaser with CuKa source in the range 20 to 70 degrees 2 ⁇ at a step size of 0.02°.
  • KBLFT and KB FT are relaxor ferroelectrics and do not have a T c like ferroelectric materials.
  • the peak maximum in permittivity for a relaxor is represented by T m and is not equivalent of a T c.
  • the strain induced in these materials are predominantly electrostrictive and do not require a ferroelectric order. However it depends on polarisation and a significant decrease in polarisation after T m can result in a decreased electromechanical strain.
  • KBLFT (x) series prepared according to Example 1 are set out in Tables 4 and 5.
  • conventional PZT piezoelectric ceramics typically demonstrate an operating temperature ⁇ 200 °C.
  • Piezoelectric charge constant (d 33 ) was measured using (Piezotest. Model PM300, London, UK) piezoelectric meter after DC poling in silicon oil at 5kV/mm and 100°C. A dynamic force of 0.25 N with frequency of 110 Hz was applied to take these measurements.
  • the lead-free piezoelectric and/or electrostrictive ceramic materials according to the invention do not have significant piezoelectric behaviour as compared with known PZT materials: the peak d 33 for either the KBLFT or the KB FT series is 125 pC/N. However, the materials show high strain with excellent temperature stability and fatigue resistant (see Examples 6 and 7) combined with an upper operating limit of at least 300°C, which is exceptional in both lead and lead-free materials.
  • the sample holder had an integrated heating unit and was coupled with a laser beam interferometer. Hence, the system was able to perform simultaneous acquisition of polarization and electromechanical strain data over a wide range of temperatures.
  • the sample holder was filled with silicon oil to increase the range of applied voltage without any electric arcing. All measurements were taken at a fixed frequency of 1 Hz.
  • the electromechanical strain of a specimen of composition of KB FT9 and KBLFTIO were measured at an applied electrical field of 6 kV/mm and appears as the expected butterfly loops.
  • the results shown in Figs. 2 and 5 and in Tables 8 and 9 demonstrate moderate electromechanical strains with an approximate d 33 * value of X pm/V for KB FT9 and Y pm/V for KBLFTIO.
  • the piezoelectric strain coefficient d 33 of the lead-free piezoelectric ceramic material are generally below those of PZT.
  • conventional PZT piezoelectric ceramics typically demonstrate a low-field d 33 of 200 pm/V - 600 pm/V.
  • PIC 151 (PI Ceramic Lederhose Germany) has been shown to lose about 50 % of 2P r after 3 x 10 6 bipolar cycles ( ⁇ 2E C ) accompanied by severe asymmetric degradation in bipolar strain (see J. Nuffer et al., Acta mater. 48 3783-3794 (2000)).
  • Example 7 Temperature Stability Example 4 was repeated over a range of temperatures for the KB FT9 and KBLFTIO samples.
  • Tables 10 and 11 include data for normalised bipolar strain as a function of temperature.
  • a ceramic slurry was prepared by mixing calcined powders of KB FT9 with binder (Butar B-98 Sigma), plasticizers (Kollisolve PEG E 400 and benzyl butyl phthalate), dispersant (Hypermer KD-1) and solvents (ethanol and methanol) using a speed mixer at a speed of 1200 rpm for 15 minutes.
  • Green ceramic tapes were prepared by casting the mixture onto moving silicon coated PET carrier film using Mistier TCC-1200 with a single doctor blade. The gap between carrier and blade was 400 ⁇ .
  • a DEK 247 screen printer was used to print Pt electrodes (C60903D5; Gwent
  • the green tape with Pt electrodes was peeled off the carrier film and stacked into a multilayer structure. Each stack consisted of 10 electrode layers with a buffer layer both on top and bottom, i.e. the stack is sandwiched between buffer layers. The stacks were then sintered at the same temperature as bulk ceramics following a two-step binder burn-out at 350 °C and 600 °C each for two hours.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

Un matériau céramique piézoélectrique et/ou électrostrictif sans plomb ayant la formule (1-x) K0.5Bi0.5TiO3 - x[Bi(RE)Fe(Ti)O3]; générale : où RE = éléments de terre rare non radioactifs tels que définis par IUPAC et où 0,01 ≤ x ≤ 0,25.
PCT/GB2017/051383 2016-05-27 2017-05-18 Matériaux piézo-électriques/électrostrictifs sans plomb, stables à la température, présentant une résistance à la fatigue améliorée WO2017203211A1 (fr)

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GB1609368.4A GB2550887B (en) 2016-05-27 2016-05-27 Temperature stable lead-free piezoelectric/electrostrictive materials with enhanced fatigue resistance

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CN111217604A (zh) * 2020-01-14 2020-06-02 西安工业大学 具有高储能密度和效率的钛酸铋钠基电子陶瓷及制备方法
CN112811902A (zh) * 2021-01-11 2021-05-18 北京工业大学 一种高储能密度的钛酸铋钾基三元无铅铁电陶瓷材料及其制备
CN115286384A (zh) * 2022-08-12 2022-11-04 广东捷成科创电子股份有限公司 一种knn基无铅压电陶瓷及其制备方法
CN115849901A (zh) * 2022-12-03 2023-03-28 北京工业大学 一种K0.5Bi0.5TiO3基三元系介电储能无铅陶瓷材料

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CN111217604A (zh) * 2020-01-14 2020-06-02 西安工业大学 具有高储能密度和效率的钛酸铋钠基电子陶瓷及制备方法
CN111217604B (zh) * 2020-01-14 2022-06-24 西安工业大学 具有高储能密度和效率的钛酸铋钠基电子陶瓷的制备方法
CN112811902A (zh) * 2021-01-11 2021-05-18 北京工业大学 一种高储能密度的钛酸铋钾基三元无铅铁电陶瓷材料及其制备
CN115286384A (zh) * 2022-08-12 2022-11-04 广东捷成科创电子股份有限公司 一种knn基无铅压电陶瓷及其制备方法
CN115286384B (zh) * 2022-08-12 2023-06-27 广东捷成科创电子股份有限公司 一种knn基无铅压电陶瓷及其制备方法
CN115849901A (zh) * 2022-12-03 2023-03-28 北京工业大学 一种K0.5Bi0.5TiO3基三元系介电储能无铅陶瓷材料
CN115849901B (zh) * 2022-12-03 2023-08-18 北京工业大学 一种K0.5Bi0.5TiO3基三元系介电储能无铅陶瓷材料

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