WO2017201777A1 - Woled显示装置 - Google Patents

Woled显示装置 Download PDF

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Publication number
WO2017201777A1
WO2017201777A1 PCT/CN2016/085799 CN2016085799W WO2017201777A1 WO 2017201777 A1 WO2017201777 A1 WO 2017201777A1 CN 2016085799 W CN2016085799 W CN 2016085799W WO 2017201777 A1 WO2017201777 A1 WO 2017201777A1
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Prior art keywords
layer
woled
light
green
red
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French (fr)
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刘虹
李泳锐
陈孝贤
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/120,744 priority Critical patent/US20170338290A1/en
Publication of WO2017201777A1 publication Critical patent/WO2017201777A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Definitions

  • the present invention relates to the field of flat panel displays, and more particularly to a WOLED display device.
  • the active matrix flat panel display has many advantages such as thin body, power saving, no radiation, and has been widely used.
  • organic light-emitting diode (OLED) display technology is a promising flat panel display technology, which has excellent display performance, especially self-illumination, simple structure, ultra-thin and light, fast response.
  • Wide viewing angle, low power consumption and flexible display it is known as “dream display”, and its production equipment investment is much smaller than Thin Film Transistor-Liquid Crystal Display (TFT-LCD).
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • OLED has been on the eve of mass production. With the further development of research and the emergence of new technologies, OLED display devices will have a breakthrough development.
  • WOLED white organic light emitting diode
  • CF color filter
  • the substrate 100 includes a TFT structure 200 disposed on the substrate 100, and a portion covering the TFT structure 200.
  • a WOLED 600 disposed on the second passivation layer 500 and driven by the TFT structure 200.
  • the structure of the green sub-pixel region and the blue sub-pixel region on the WOLED display device is the same as that of the red sub-pixel region, wherein the white light emitting layer of the WOLED is formed by mixing and vaporizing red, green and blue emitting fluorescent materials, and the color filter layer is formed.
  • the red, green, and blue photoresist layers cannot filter the white light emitting layer to emit white light, as shown in FIG. 2, which is a white light spectrum diagram of an exemplary WOLED, as shown by two circles in the circle (480 nm). There is a certain peak between 530nm and 530nm and 580nm.
  • the presence of the peak causes the white light source emitted by the WOLED to pass through the color filter layer, resulting in poor blue and green light effects, especially white light passing through the blue light.
  • the half width of the blue light is wider, and the purity of the blue light is lower, as shown in FIG.
  • the spectrogram of the exemplary WOLED white light source after passing through the red, green and blue photoresist layers of the color filter layer, the small protrusions (between 480 nm and 530 nm) in the circled part of the figure will affect the purity of the blue light. Therefore, the above WOLED display device has the disadvantages that the luminescent purity of the three primary colors of red, green and blue is relatively low and the color gamut is narrow.
  • An object of the present invention is to provide a WOLED display device, which is provided with a light purification layer having a specific absorption wavelength to enhance the filtering effect of the color filter layer, and the red, green and blue primary colors have high luminescence purity, thereby being able to display A wider color gamut.
  • the present invention provides a WOLED display device including a substrate, a TFT array layer disposed on the substrate, a light purification layer disposed on the TFT array layer, and a color filter disposed on the optical purification layer. a light layer, and a WOLED disposed on the color filter layer;
  • the color filter layer comprises a plurality of red, green and blue photoresist units arranged in an array
  • the red, green, and blue photoresist units of the color filter layer filter white light emitted by the WOLED to form red, green, and blue lights, respectively, and the light purification layer selects the red, green, and blue lights.
  • Sexual absorption reduces the half-width of the red, green and blue light, thereby increasing its purity.
  • the light purification layer has an absorption peak of 500 nm in the visible spectrum for visible light, and no absorption peak in the visible spectrum for other wavelength bands of visible light.
  • the light purification layer has an absorption peak at 576 nm in the visible spectrum for visible light and no absorption peak in the visible spectrum for other wavelength bands of visible light.
  • the light purification layer has an absorption peak of 500 nm and 576 nm in the visible spectrum for visible light, and no absorption peak in the visible spectrum for other wavelength bands of visible light.
  • the light purification layer is a dye film layer.
  • the WOLED includes an anode, a white light emitting layer, and a cathode which are stacked from bottom to top.
  • the white light emitting layer is formed by mixed vapor deposition of red, green, and blue emitting fluorescent materials.
  • the TFT array layer includes a plurality of arrayed TFT units;
  • the TFT unit includes a first gate and a second gate formed on the substrate, formed on the first gate and the second gate a gate insulating layer, a first active layer and a second active layer formed over the gate insulating layer, a first source and a first drain formed over the first active layer, and formed on a second source and a second drain over the second active layer, the first drain is connected to the second gate, the first gate, the gate insulating layer, the first active layer, a source and a first drain form a switching thin film transistor, and the second gate, the gate insulating layer, the second active layer, the second source, and the second drain form a driving thin film transistor;
  • the anode of the WOLED is connected to the second drain of the driving thin film transistor.
  • the WOLED display device further includes a first passivation layer disposed between the TFT array layer and the optical purification layer, and a second passivation layer disposed between the color filter layer and the WOLED;
  • a via hole is disposed on the first passivation layer and the second passivation layer corresponding to the second drain of the driving thin film transistor, and an anode of the WOLED passes through the via hole and a second drain of the driving thin film transistor Extremely connected.
  • the material of the anode is ITO.
  • the present invention also provides a WOLED display device, comprising: a substrate, a TFT array layer disposed on the substrate, a light purification layer disposed on the TFT array layer, a color filter layer disposed on the optical purification layer, and a WOLED disposed on the color filter layer;
  • the color filter layer comprises a plurality of red, green and blue photoresist units arranged in an array
  • the red, green, and blue photoresist units of the color filter layer filter white light emitted by the WOLED to form red, green, and blue lights, respectively, and the light purification layer selects the red, green, and blue lights.
  • Sexual absorption reducing the half width of the red, green and blue light, thereby increasing its purity;
  • the light purification layer is a dye film layer
  • the WOLED comprises an anode, a white light emitting layer, and a cathode disposed from bottom to top;
  • the material of the anode is ITO
  • the white light emitting layer is formed by mixed vapor deposition of red, green and blue emitting fluorescent materials.
  • the present invention provides a WOLED display device including a substrate, a TFT array layer disposed on the substrate, a photo-purification layer disposed on the TFT array layer, and a photo-purification layer.
  • a color filter layer and a WOLED disposed on the color filter layer; the red, green, and blue photoresist units of the color filter layer filter white light emitted by the WOLED to form red, green, and blue lights, respectively.
  • the light purification layer selectively absorbs the red, green and blue light, reduces the half width of the red, green and blue light, enhances the filtering effect of the color filter layer, and illuminates the purity of the three primary colors of red, green and blue. High so that you can display a wider color gamut.
  • FIG. 1 is a structural diagram of a red sub-pixel region of a WOLED display device in the prior art. intention
  • FIG. 2 is a white light spectrum diagram of a WOLED emitted from an exemplary WOLED display device
  • FIG. 3 is a spectrogram of a red, green, and blue photoresist layer of a color filter layer in a typical WOLED display device after white light filtering of the WOLED;
  • FIG. 4 is a schematic structural view of a WOLED display device of the present invention.
  • the present invention provides a WOLED display device including a substrate 10, a TFT array layer 20 disposed on the substrate 10, a photo-purification layer 60 disposed on the TFT array layer 20, and a photo-purification layer.
  • the color filter layer 40 includes a plurality of red, green, and blue photoresist units 41, 42, 43 arranged in an array.
  • the red, green, and blue photoresist units 41, 42, 43 of the color filter layer 40 filter the white light emitted by the WOLED 30 to form red, green, and blue lights, respectively, and the light purification layer 60 passes. Selectively absorbing the red, green and blue light to reduce the half width of the red, green and blue light, thereby enabling the WOLED display device to emit more pure red, green and blue light, thereby displaying a wider range Color gamut.
  • the light purification layer 60 has an absorption peak of 500 nm in the visible spectrum for visible light, and no absorption peak in the visible spectrum for other wavelengths of visible light, and the transmittance for other visible light bands is almost equal to 100%, which can make The half width of the blue light is narrowed to increase the purity of the blue light.
  • the light purification layer 60 has an absorption peak at 576 nm in the visible spectrum for visible light, and no absorption peak in the visible spectrum for other wavelengths of visible light, and the transmittance for other visible light bands is almost equal to 100%, which can make green The half-width of the light is narrowed to increase the purity of the green light.
  • the light purification layer 60 has an absorption peak of 500 nm and 576 nm in the visible spectrum for visible light, and no absorption peak in the visible spectrum for other wavelengths of visible light, and the transmittance for other visible light bands is almost equal to 100%. It can narrow the half-width of blue light and green light at the same time, and improve the purity of blue light and green light.
  • the light purification layer 60 is a dye film layer or other material film layer having a specific absorption wavelength.
  • the WOLED 30 includes an anode, a white light emitting layer, and a cathode which are stacked from bottom to top.
  • the white light emitting layer is formed by mixed vapor deposition of red, green, and blue emitting fluorescent materials.
  • the TFT array layer 20 includes a plurality of arrayed TFT units; the TFT unit includes a first gate and a second gate formed on the substrate 10, formed on the first gate and a gate insulating layer over the second gate, a first active layer and a second active layer formed over the gate insulating layer, a first source and a first drain formed over the first active layer a second source and a second drain formed on the second active layer, the first drain is connected to the second gate, the first gate, the gate insulating layer, the first The active layer, the first source and the first drain form a switching thin film transistor, and the second gate, the gate insulating layer, the second active layer, the second source and the second drain form a driving thin film transistor; The anode of the WOLED 30 is connected to the second drain of the driving thin film transistor.
  • the WOLED display device further includes a first passivation layer 51 disposed between the TFT array layer 20 and the optical purification layer 60, and a second passivation disposed between the color filter layer 40 and the WOLED 30. Layer 52.
  • a via hole is disposed on the first passivation layer 51 and the second passivation layer 52 corresponding to the second drain of the driving thin film transistor, and an anode of the WOLED 30 passes through the via hole and the driving film.
  • the second drain of the transistor is connected.
  • the material of the anode is ITO.
  • the present invention provides a WOLED display device including a substrate, a TFT array layer disposed on the substrate, a light purification layer disposed on the TFT array layer, and a color disposed on the optical purification layer.
  • the purification layer selectively absorbs the red, green and blue light to reduce the half width of the red, green and blue light, and enhances the filtering effect of the color filter layer, and the red, green and blue primary colors have high luminous purity. So that you can display a wider color gamut.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明提供一种WOLED显示装置，包括基板(10)、设于基板(10)上的TFT阵列层(20)、设于所述TFT阵列层(20)上的光纯化层(60)、设于光纯化层(60)上的彩色滤光层(40)、及设于所述彩色滤光层(40)上的WOLED(30)；所述彩色滤光层(40)包括数个阵列排布的红、绿、蓝色光阻单元(41、42、43)，所述红、绿、蓝色光阻单元(41、42、43)对WOLED(30)发出的白光进行过滤而分别形成红、绿、蓝色光，光纯化层(60)通过对该红、绿、蓝色光进行选择性吸收，减小该红、绿、蓝色光的半峰宽，提升彩色滤光层(40)的滤光效果，进而发出更纯的红、绿、蓝光，从而可以显示出更广的色域。

Description

WOLED显示装置 技术领域
本发明涉及平面显示器领域，尤其涉及一种WOLED显示装置。
背景技术
主动矩阵平面显示器具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。其中，有机发光二极管(organic light-emitting diode，OLED)显示技术是一种极具发展前景的平板显示技术，它具有十分优异的显示性能，特别是自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性，被誉为“梦幻显示器”，再加上其生产设备投资远小于薄膜晶体管型液晶显示屏(Thin Film Transistor-Liquid Crystal Display，TFT-LCD)，得到了各大显示器厂家的青睐，已成为显示技术领域中第三代显示器件的主力军。目前OLED已处于大规模量产的前夜，随着研究的进一步深入，新技术的不断涌现，OLED显示器件必将有一个突破性的发展。
为实现OLED显示器的全彩化，一种方式是通过白色有机发光二极管(White Organic Light Emitting Diode，WOLED)和彩色滤光(Color Filter，CF)层叠加来实现。其中，WOLED与CF层叠加结构不需要精准的掩膜工艺，就可以实现OLED显示器的高分辨率，是应用较为广泛的一种。
图1所示为一种使用上述结构的现有WOLED显示装置上红色子像素区域的结构示意图；其包括基板100、设于所述基板100上的TFT结构200、覆盖所述TFT结构200的第一钝化层300、设于第一钝化层300上的红色光阻层410，设于所述第一钝化保护层300上覆盖所述红色光阻层410的第二钝化层500、及设于所述第二钝化层500上并由所述TFT结构200所驱动的WOLED600。该WOLED显示装置上绿色子像素区域及蓝色子像素区域的结构与红色子像素区域相同，其中WOLED的白光发光层由红、绿、蓝色发射荧光材料混合蒸镀而成，彩色滤光层的红、绿、蓝色光阻层无法对白光发光层发射白光进行较好的滤光，如图2所示，为一示例性WOLED发出的白光频谱图，如图中圆圈标注的两处(480nm与530nm之间、530nm与580nm之间)均有一定峰值，该峰值的存在使得该WOLED发出的白光光源经过彩色滤光层后会有蓝光和绿光效果不佳的产生，尤其是白光经过蓝光光阻层后，蓝光的半峰宽较宽，蓝光纯度较低，如图3所示，为一示 例性WOLED白光光源经过彩色滤光层的红、绿、蓝色光阻层后的频谱图，图中圆圈标注部分(480nm与530nm之间)的小突起将会影响蓝光的纯度。因此上述WOLED显示装置存在红、绿、蓝三原色的发光纯度相对较低、及色域窄的缺点。
发明内容
本发明的目的在于提供一种WOLED显示装置，通过设置一层具有特定吸收波长的光纯化层，提升彩色滤光层的滤光效果，红、绿、蓝三原色的发光纯度高，从而可以显示出更广的色域。
为实现上述目的，本发明提供一种WOLED显示装置，包括基板、设于所述基板上的TFT阵列层、设于所述TFT阵列层上的光纯化层、设于光纯化层上的彩色滤光层、及设于所述彩色滤光层上的WOLED；
所述彩色滤光层包括数个阵列排布的红、绿、蓝色光阻单元；
所述彩色滤光层的红、绿、蓝色光阻单元对所述WOLED发出的白光进行过滤而分别形成红、绿、蓝色光，所述光纯化层通过对该红、绿、蓝色光进行选择性吸收，减小该红、绿、蓝色光的半峰宽，从而提高其纯度。
所述光纯化层对可见光具有在可见光谱中500nm的吸收峰，对可见光的其他波段在可见光谱中不存在吸收峰。
所述光纯化层对可见光具有在可见光谱中576nm的吸收峰，对可见光的其他波段在可见光谱中不存在吸收峰。
所述光纯化层对可见光具有在可见光谱中500nm和576nm的吸收峰，对可见光的其他波段在可见光谱中不存在吸收峰。
所述光纯化层为染料膜层。
所述WOLED包括由下至上层叠设置的阳极、白光发光层、及阴极。
所述白光发光层由红、绿、蓝色发射荧光材料混合蒸镀形成。
所述TFT阵列层包括数个阵列排布的TFT单元；所述TFT单元包括形成在基板上的第一栅极和第二栅极、形成在所述第一栅极和第二栅极之上的栅绝缘层、形成在所述栅绝缘层之上的第一有源层和第二有源层、形成在第一有源层之上的第一源极和第一漏极、及形成在第二有源层之上的第二源极和第二漏极，所述第一漏极连接所述第二栅极，所述第一栅极、栅绝缘层、第一有源层、第一源极及第一漏极形成开关薄膜晶体管，所述第二栅极、栅绝缘层、第二有源层、第二源极及第二漏极形成驱动薄膜晶体管；
所述WOLED的阳极与所述驱动薄膜晶体管的第二漏极相连接。
所述WOLED显示装置还包括设于所述TFT阵列层与光纯化层之间的第一钝化层、及设于所述彩色滤光层与WOLED之间的第二钝化层；
所述第一钝化层与第二钝化层上对应所述驱动薄膜晶体管的第二漏极上方设有过孔，所述WOLED的阳极通过该过孔与所述驱动薄膜晶体管的第二漏极相连接。
所述阳极的材料为ITO。
本发明还提供一种WOLED显示装置，包括基板、设于所述基板上的TFT阵列层、设于所述TFT阵列层上的光纯化层、设于光纯化层上的彩色滤光层、及设于所述彩色滤光层上的WOLED；
所述彩色滤光层包括数个阵列排布的红、绿、蓝色光阻单元；
所述彩色滤光层的红、绿、蓝色光阻单元对所述WOLED发出的白光进行过滤而分别形成红、绿、蓝色光，所述光纯化层通过对该红、绿、蓝色光进行选择性吸收，减小该红、绿、蓝色光的半峰宽，从而提高其纯度；
其中，所述光纯化层为染料膜层；
其中，所述WOLED包括由下至上层叠设置的阳极、白光发光层、及阴极；
其中，所述阳极的材料为ITO；
其中，所述白光发光层由红、绿、蓝色发射荧光材料混合蒸镀形成。
本发明的有益效果：本发明提供的一种WOLED显示装置，包括基板、设于所述基板上的TFT阵列层、设于所述TFT阵列层上的光纯化层、设于光纯化层上的彩色滤光层、及设于所述彩色滤光层上的WOLED；所述彩色滤光层的红、绿、蓝色光阻单元对WOLED发出的白光进行过滤而分别形成红、绿、蓝色光，光纯化层通过对该红、绿、蓝色光进行选择性吸收，减小该红、绿、蓝色光的半峰宽，提升彩色滤光层的滤光效果，红、绿、蓝三原色的发光纯度高，从而可以显示出更广的色域。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有技术中一种WOLED显示装置的红色子像素区域的结构示 意图；
图2为一示例性WOLED显示装置中WOLED发出的白光频谱图；
图3为一示例性WOLED显示装置中彩色滤光层的红、绿、蓝色光阻层分别对WOLED发出白光过滤后的频谱图；
图4为本发明的WOLED显示装置的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图4，本发明提供一种WOLED显示装置，包括基板10、设于所述基板10上的TFT阵列层20、设于所述TFT阵列层20上的光纯化层60、设于光纯化层60上的彩色滤光层40、及设于所述彩色滤光层40上的WOLED30。
具体地，所述彩色滤光层40包括数个阵列排布的红、绿、蓝色光阻单元41、42、43。
具体地，所述彩色滤光层40的红、绿、蓝色光阻单元41、42、43对所述WOLED30发出的白光进行过滤而分别形成红、绿、蓝色光，所述光纯化层60通过对该红、绿、蓝色光进行选择性吸收，减小该红、绿、蓝色光的半峰宽，进而使该WOLED显示装置发出更纯的红、绿、蓝光，从而可以显示出更广的色域。
具体地，所述光纯化层60对可见光具有在可见光谱中500nm的吸收峰，对可见光的其他波段在可见光谱中不存在吸收峰，对其他可见光波段的透过率几乎等于100％，可以使蓝光的半峰宽变窄，提升蓝光的纯度。
或者，所述光纯化层60对可见光具有在可见光谱中576nm的吸收峰，对可见光的其他波段在可见光谱中不存在吸收峰，对其他可见光波段的透过率几乎等于100％，可以使绿光的半峰宽变窄，提升绿光的纯度。
再或者，所述光纯化层60对可见光同时具有在可见光谱中500nm和576nm的吸收峰，对可见光的其他波段在可见光谱中不存在吸收峰，对其他可见光波段的透过率几乎等于100％，可以使蓝光、及绿光的半峰宽同时变窄，提升蓝光、及绿光的纯度
具体地，所述光纯化层60为染料膜层或其他具有特定吸收波长的材料膜层。
具体地，所述WOLED30包括由下至上层叠设置的阳极、白光发光层、及阴极。
具体地，所述白光发光层由红、绿、蓝色发射荧光材料混合蒸镀形成。
具体地，所述TFT阵列层20包括数个阵列排布的TFT单元；所述TFT单元包括形成在基板10上的第一栅极和第二栅极、形成在所述第一栅极和第二栅极之上的栅绝缘层、形成在所述栅绝缘层之上的第一有源层和第二有源层、形成在第一有源层之上的第一源极和第一漏极、及形成在第二有源层之上的第二源极和第二漏极，所述第一漏极连接所述第二栅极，所述第一栅极、栅绝缘层、第一有源层、第一源极及第一漏极形成开关薄膜晶体管，所述第二栅极、栅绝缘层、第二有源层、第二源极及第二漏极形成驱动薄膜晶体管；所述WOLED30的阳极与所述驱动薄膜晶体管的第二漏极相连接。
具体地，所述WOLED显示装置还包括设于TFT阵列层20与光纯化层60之间的第一钝化层51、及设于所述彩色滤光层40与WOLED30之间的第二钝化层52。
具体地，所述第一钝化层51与第二钝化层52上对应所述驱动薄膜晶体管的第二漏极上方设有过孔，所述WOLED30的阳极通过该过孔与所述驱动薄膜晶体管的第二漏极相连接。
具体地，所述阳极的材料为ITO。
综上所述，本发明提供的一种WOLED显示装置，包括基板、设于所述基板上的TFT阵列层、设于所述TFT阵列层上的光纯化层、设于光纯化层上的彩色滤光层、及设于所述彩色滤光层上的WOLED；所述彩色滤光层的红、绿、蓝色光阻单元对WOLED发出的白光进行过滤而分别形成红、绿、蓝色光，光纯化层通过对该红、绿、蓝色光进行选择性吸收，减小该红、绿、蓝色光的半峰宽，提升彩色滤光层的滤光效果，红、绿、蓝三原色的发光纯度高，从而可以显示出更广的色域。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (16)

  1. 一种WOLED显示装置，包括基板、设于所述基板上的TFT阵列层、设于所述TFT阵列层上的光纯化层、设于光纯化层上的彩色滤光层、及设于所述彩色滤光层上的WOLED；
    所述彩色滤光层包括数个阵列排布的红、绿、蓝色光阻单元；
    所述彩色滤光层的红、绿、蓝色光阻单元对所述WOLED发出的白光进行过滤而分别形成红、绿、蓝色光，所述光纯化层通过对该红、绿、蓝色光进行选择性吸收，减小该红、绿、蓝色光的半峰宽，从而提高其纯度。
  2. 如权利要求1所述的WOLED显示装置，其中，所述光纯化层对可见光具有在可见光谱中500nm的吸收峰，对可见光的其他波段在可见光谱中不存在吸收峰。
  3. 如权利要求1所述的WOLED显示装置，其中，所述光纯化层对可见光具有在可见光谱中576nm的吸收峰，对可见光的其他波段在可见光谱中不存在吸收峰。
  4. 如权利要求1所述的WOLED显示装置，其中，所述光纯化层对可见光具有在可见光谱中500nm和576nm的吸收峰，对可见光的其他波段在可见光谱中不存在吸收峰。
  5. 如权利要求1所述的WOLED显示装置，其中，所述光纯化层为染料膜层。
  6. 如权利要求1所述的WOLED显示装置，其中，所述WOLED包括由下至上层叠设置的阳极、白光发光层、及阴极。
  7. 如权利要求6所述的WOLED显示装置，其中，所述白光发光层由红、绿、蓝色发射荧光材料混合蒸镀形成。
  8. 如权利要求6所述的WOLED显示装置，其中，所述TFT阵列层包括数个阵列排布的TFT单元；所述TFT单元包括形成在基板上的第一栅极和第二栅极、形成在所述第一栅极和第二栅极之上的栅绝缘层、形成在所述栅绝缘层之上的第一有源层和第二有源层、形成在第一有源层之上的第一源极和第一漏极、及形成在第二有源层之上的第二源极和第二漏极，所述第一漏极连接所述第二栅极，所述第一栅极、栅绝缘层、第一有源层、第一源极及第一漏极形成开关薄膜晶体管，所述第二栅极、栅绝缘层、第二有源层、第二源极及第二漏极形成驱动薄膜晶体管；
    所述WOLED的阳极与所述驱动薄膜晶体管的第二漏极相连接。
  9. 如权利要求8所述的WOLED显示装置，还包括设于TFT阵列层与光纯化层之间的第一钝化层、及设于所述彩色滤光层与WOLED之间的第二钝化层；
    所述第一钝化层与第二钝化层上对应所述驱动薄膜晶体管的第二漏极上方设有过孔，所述WOLED的阳极通过该过孔与所述驱动薄膜晶体管的第二漏极相连接。
  10. 如权利要求6所述的WOLED显示装置，其中，所述阳极的材料为ITO。
  11. 一种WOLED显示装置，包括基板、设于所述基板上的TFT阵列层、设于所述TFT阵列层上的光纯化层、设于光纯化层上的彩色滤光层、及设于所述彩色滤光层上的WOLED；
    所述彩色滤光层包括数个阵列排布的红、绿、蓝色光阻单元；
    所述彩色滤光层的红、绿、蓝色光阻单元对所述WOLED发出的白光进行过滤而分别形成红、绿、蓝色光，所述光纯化层通过对该红、绿、蓝色光进行选择性吸收，减小该红、绿、蓝色光的半峰宽，从而提高其纯度；
    其中，所述光纯化层为染料膜层；
    其中，所述WOLED包括由下至上层叠设置的阳极、白光发光层、及阴极；
    其中，所述阳极的材料为ITO；
    其中，所述白光发光层由红、绿、蓝色发射荧光材料混合蒸镀形成。
  12. 如权利要求11所述的WOLED显示装置，其中，所述光纯化层对可见光具有在可见光谱中500nm的吸收峰，对可见光的其他波段在可见光谱中不存在吸收峰。
  13. 如权利要求11所述的WOLED显示装置，其中，所述光纯化层对可见光具有在可见光谱中576nm的吸收峰，对可见光的其他波段在可见光谱中不存在吸收峰。
  14. 如权利要求11所述的WOLED显示装置，其中，所述光纯化层对可见光具有在可见光谱中500nm和576nm的吸收峰，对可见光的其他波段在可见光谱中不存在吸收峰。
  15. 如权利要求11所述的WOLED显示装置，其中，所述TFT阵列层包括数个阵列排布的TFT单元；所述TFT单元包括形成在基板上的第一栅极和第二栅极、形成在所述第一栅极和第二栅极之上的栅绝缘层、形成在所述栅绝缘层之上的第一有源层和第二有源层、形成在第一有源层之上的第一源极和第一漏极、及形成在第二有源层之上的第二源极和第二漏极， 所述第一漏极连接所述第二栅极，所述第一栅极、栅绝缘层、第一有源层、第一源极及第一漏极形成开关薄膜晶体管，所述第二栅极、栅绝缘层、第二有源层、第二源极及第二漏极形成驱动薄膜晶体管；
    所述WOLED的阳极与所述驱动薄膜晶体管的第二漏极相连接。
  16. 如权利要求15所述的WOLED显示装置，还包括设于TFT阵列层与光纯化层之间的第一钝化层、及设于所述彩色滤光层与WOLED之间的第二钝化层；
    所述第一钝化层与第二钝化层上对应所述驱动薄膜晶体管的第二漏极上方设有过孔，所述WOLED的阳极通过该过孔与所述驱动薄膜晶体管的第二漏极相连接。
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