WO2017195933A1 - Substrate support holder and substrate treatment device using same - Google Patents

Substrate support holder and substrate treatment device using same Download PDF

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Publication number
WO2017195933A1
WO2017195933A1 PCT/KR2016/007562 KR2016007562W WO2017195933A1 WO 2017195933 A1 WO2017195933 A1 WO 2017195933A1 KR 2016007562 W KR2016007562 W KR 2016007562W WO 2017195933 A1 WO2017195933 A1 WO 2017195933A1
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WO
WIPO (PCT)
Prior art keywords
substrate
wire
susceptor
frame
support
Prior art date
Application number
PCT/KR2016/007562
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French (fr)
Korean (ko)
Inventor
김용현
박창균
김영기
김덕호
마창수
민경인
Original Assignee
주성엔지니어링(주)
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Application filed by 주성엔지니어링(주) filed Critical 주성엔지니어링(주)
Publication of WO2017195933A1 publication Critical patent/WO2017195933A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to a substrate support holder for supporting a substrate using a wire and a substrate processing apparatus using the same.
  • the substrate processing apparatus is used in the manufacture of semiconductor devices, flat panel displays, thin film solar cells, and the like, and is roughly classified into a vapor deposition apparatus (Annealing Apparstus) and an annealing apparatus (Annealing Apparstus).
  • FIG. 1 is a schematic cross-sectional view of a conventional substrate processing apparatus, which will be described.
  • the conventional substrate processing apparatus includes a chamber 11 which provides a space in which the substrate S is loaded and processed, and a susceptor in which the substrate S is mounted and supported therein.
  • Susceptor 13 is provided to be elevated.
  • substrate S is mounted in the arm Arm of a robot, carried in the chamber 11, or carried out from the chamber 11.
  • the arm of the robot When the substrate S mounted on the upper surface of the arm of the robot is to be mounted on the susceptor 13, the arm of the robot is lowered to mount the substrate S on the susceptor 13. However, when the arm of the robot is lowered, the lower surface of the arm of the robot contacts the upper surface of the susceptor 13 first, so that it is difficult to mount the substrate S on the susceptor 13.
  • a plurality of substrates S are received from the arm Arm of the robot and mounted on the susceptor 13, or a plurality of substrates S mounted on the susceptor 13 are separated from the susceptor 13.
  • the support pin 15 is installed to pass through the susceptor 13.
  • the susceptor 13 is lowered to protrude the upper end of the support pin 15 onto the upper surface of the susceptor 13.
  • the substrate S mounted on the arm of the robot is supported by the support pin 15.
  • the susceptor 13 is raised, the substrate S supported by the support pin 15 is mounted and supported on the upper surface of the susceptor 13.
  • the susceptor 13 is lowered. Then, since the upper end of the support pin 15 protrudes above the upper surface of the susceptor 13, there is a gap between the substrate S supported on the upper end of the support pin 15 and the upper surface of the susceptor 13. . In this state, the arm of the robot is inserted between the susceptor 13 and the substrate S, and then the arm of the robot is raised to mount the substrate S on the arm of the robot.
  • Particles are generated during the processing of the substrate S.
  • the particles may be deposited in the outer circumferential surface of the support pin 15 or the through hole 13a of the susceptor 13 through which the support pin 15 passes.
  • the susceptor 13 and the support pin when the susceptor 13 is raised and lowered by the particles deposited in the support pin 15 or the through hole 13a of the susceptor 13. 15 may interfere, which may damage the support pin 15.
  • the support pin 15 since the support pin 15 may rotate when the susceptor 13 moves up and down, the position of the substrate S supported by the support pin 15 may deviate from a predetermined position. This may lower productivity.
  • a substrate processing apparatus for supporting the substrate S by using a plurality of wires has been developed and used.
  • the wire is interposed between the substrate and the susceptor. For this reason, when the substrate is mounted on the susceptor and processed, the portion of the substrate where the wire is located and the portion of the substrate where the wire is not positioned may be treated differently. Therefore, there is a disadvantage that the reliability of the substrate is lowered.
  • An object of the present invention may be to provide a substrate support holder and a substrate processing apparatus using the same that can solve all the problems of the prior art as described above.
  • Another object of the present invention is to provide a substrate support holder that can improve the reliability of the substrate by configuring so that the portion of the substrate on which the wire for supporting the substrate is located and the portion of the substrate on which the wire is not located can be uniformly processed; It may be to provide a substrate processing apparatus used.
  • the frame is open one side of the arm that enters and exits the robot arm on which the substrate is mounted; One end and the other end of the frame is supported on one side of the open side and the opposite side facing the open one, respectively, and includes a plurality of wires (Wire) for supporting the substrate, the diameter of the wire is 0.1mm to 3mm Can be.
  • Wire wires
  • a substrate support holder spaced apart from the susceptor, and the diameter of the wire may be 0.1 mm to 3 mm.
  • the substrate support holder and the substrate processing apparatus using the same support the substrate by the wire of the substrate support holder, mount the substrate mounted on the arm of the robot in the susceptor, and then process the substrate.
  • a wire is formed in 0.1 mm-3.0 mm, at the time of processing of a board
  • the substrate and the susceptor have a spacing of 0.1 mm to 3.0 mm during processing of the substrate, since the entire portion of the substrate is uniformly processed, reliability of the substrate may be improved.
  • FIG. 1 is a schematic cross-sectional view of a conventional substrate processing apparatus.
  • FIG. 2 is a front cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
  • FIG 3 is a cross-sectional plan view of a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 4 is a perspective view of the substrate support holder and susceptor shown in FIG.
  • 5 to 8 is a view showing the loading of the substrate into the substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 9 is an enlarged view of a portion “A” of FIG. 8.
  • FIG. 10 is a perspective view of a substrate support holder and susceptor according to another embodiment of the present invention.
  • FIG. 11 is a perspective view of a substrate support holder according to another embodiment of the present invention.
  • At least one should be understood to include all combinations which can be presented from one or more related items.
  • the meaning of "at least one of the first item, the second item, and the third item" means not only the first item, the second item, or the third item, but also two of the first item, the second item, and the third item. A combination of all items that can be presented from more than one.
  • first item, second item and / or third item means two items of first item, second item or third item as well as first item, second item or third item. It means a combination of all items that can be presented from the above.
  • FIG. 2 is a front sectional view of a substrate processing apparatus according to an embodiment of the present invention
  • FIG. 3 is a plan sectional view of the substrate processing apparatus according to an embodiment of the present invention
  • FIG. 4 is a substrate support holder shown in FIG. A perspective view of the susceptor.
  • the substrate processing apparatus may include a chamber 110 that provides a space in which the substrate S (see FIG. 6) is carried in and processed, and the chamber ( 110 may include a chamber wall 111 having an upper surface opened and a lid 115 coupled to an open upper surface of the chamber wall 111.
  • One side of the chamber wall 111 may be formed with an entrance and exit 111a through which the arm 50 (see FIG. 6) of the robot on which the substrate S is mounted enters and exits.
  • a discharge port 111b may be formed to discharge process gas and by-products that do not participate.
  • a shower head 121 for injecting a thin film process gas to be formed in the substrate S may be installed at the lid 115, the upper side of the chamber 110, and the process gas is showered on the upper surface of the lid 115.
  • a gas supply pipe 125 for supplying the head 121 may be installed.
  • a susceptor 130 on which the substrate S is mounted and supported may be installed at an inner lower surface side of the chamber wall 111, which is a lower side of the chamber 110, and the susceptor 130 is provided to a driving means such as a motor or a cylinder. It can be installed to be elevated and rotatable. In the susceptor 130, a heater or the like may be installed to appropriately heat the substrate S during a process for treating the substrate S.
  • the substrate S is loaded and stored on the outside of the chamber 110.
  • the substrate S loaded on the outside of the chamber 110 is mounted on the arm 50 of the robot and loaded into the chamber 110, then mounted on the susceptor 130, and mounted on the susceptor 130.
  • the substrate S is mounted on the arm 50 of the robot and taken out from the chamber 110.
  • the substrate 110 receives the substrate S mounted on the arm 50 of the robot and is mounted on the susceptor 130, and the susceptor 130 mounts the substrate S mounted on the susceptor 130.
  • the substrate support holder 200 may be installed to be spaced apart from each other.
  • the substrate support holder 200 may include a frame 210 and a plurality of wires 220, and may be supported and installed on an inner surface of the chamber wall 111 of the chamber 110 above the susceptor 130.
  • the frame 210 may be formed in a quadrangular shape, and one surface 210a facing the surface of the chamber wall 111 on which the doorway 111a is formed may be opened to allow the arm 50 of the robot on which the substrate S is mounted. Can enter and exit.
  • One surface 210a of the frame 210 may have an entire portion open, and one portion may be opened.
  • the frame 210 is supported by the lower surface of the plurality of support pins 113 installed on the inner surface of the chamber wall 111, and the support grooves 212 into which the support pins 113 are inserted into the lower surface of the frame 210. This can be formed. At this time, it is obvious that the plurality of support pins 113 should be formed at the same height based on the susceptor 130.
  • the wire 220 is supported at one end and the other end on the open side (210a) of the frame 210 and on the side of the opposite surface (210b) facing the open surface (210a), respectively, to support the substrate (S).
  • the susceptor 130 may have an upper portion having a smaller size than the lower portion, and the substrate support holder 200 may be elevated by the susceptor 130.
  • the lower edge portion of the susceptor 130 may contact the lower surface of the frame 210, and the upper portion of the susceptor 130 may be inside the frame 210.
  • the wire 220 may be in contact with the wire 220 and the substrate S supported by the wire 220. Therefore, when the susceptor 130 rises and the lower edge portion of the susceptor 130 contacts the bottom surface of the frame 210, the susceptor 130 raises the frame 210.
  • the frame 210 raised by the susceptor 130 descends when the susceptor 130 descends. Therefore, the substrate support holder 200 is lifted by the lift of the susceptor 130.
  • the entire portion of the wire 220 may support the substrate S when the wire 220 does not sag.
  • the frame 210 may be provided with a tension control module 230 for supporting the wire 220 and at the same time adjust the tension of the wire 220.
  • the tension control module 230 may be installed on each of the open surface 210a and the opposing surface 210b of the frame 210 to face each other, and support one end side and the other end side of the wire 220, respectively. At the same time, the tension of the wire 220 can be adjusted.
  • an open surface 210a of the frame 210 connects one side and the other side of the open surface 210a of the frame 210 and a bracket 214 to which the tension control module 230 is installed is installed. Can be.
  • the tension control module 230 may include a support block 231 and an adjustment nut 235.
  • the support block 231 may be installed on the bracket 214 and the opposing surface 210b, respectively, and the support block 231 installed on the bracket 214 may be supported while the wire 220 passes through one end thereof. The other end side of the wire 220 may be supported while passing through the support block 231 installed on the opposing surface 210b.
  • the adjustment nut 235 is rotatably coupled to the end side of the wire 220 passing through the support block 231, and expands and contracts the wire 220 based on the support block 235 as it rotates. You can. That is, the adjustment nut 235 can stretch and contract the wire 220 between the support block 235 and the support block 235 as the forward and reverse rotation. In order to allow the wire 220 to be stretched and contracted by the rotation of the adjustment nut 235, spirals that engage with spirals of the adjustment nut 235 may be formed on the outer circumferential surfaces of both ends of the wire 220.
  • the screw is connected to the end side of the wire 220, and the adjustment nut 235 is fastened to the screw Can be.
  • the tension of the wire 220 is adjusted using the adjusting nut 235 so that the wire 220 does not sag and maintains a straight line, the substrate S may be contacted and supported on the entire portion of the wire 220. have.
  • An elastic member 237 may be installed between the support block 231 and the adjustment nut 235 to elastically support the adjustment nut 235 to the outside of the support block 231.
  • the edge portion of the substrate S which is a non-display area, may be in contact with and supported on the inner peripheral surface side of the upper surface of the frame 210.
  • the upper surface of the frame 210 and the outermost outer peripheral surface of the wire 220 is preferably located at the same height relative to the susceptor 130 or the lower surface of the frame 210.
  • the wire 220 is disposed between the susceptor 130 and the substrate S when the substrate S is processed. Is published. In this case, if the diameter of the wire 220 is not appropriate, the portion of the substrate S on which the wire 220 is located and the portion of the substrate S on which the wire 220 is not positioned may be treated differently.
  • the diameter of the wire 220 may be formed to be 0.1 mm to 3 mm so that the entire portion of the substrate S may be uniformly processed. have.
  • the reason why the diameter of the wire 220 is formed to be 0.1 mm to 3 mm is that if the diameter of the wire 220 is less than 0.1 mm, the wire 220 may have weak rigidity, and the diameter of the wire 220 may be 3 mm. This is because when the portion of the substrate S on which the wire 220 is located is discolored, the uniformity of the substrate S may decrease.
  • Experimental conditions include general plasma enhanced chemical vapor deposition (PECVD) process conditions for depositing a thin film on a substrate using plasma, a process for manufacturing a semiconductor device, and general MOCVD (metal oxide film) formed on a substrate using a chemical reaction. Metal Organic Chemical Vapor Deposition) under the process conditions.
  • PECVD plasma enhanced chemical vapor deposition
  • MOCVD metal oxide film
  • Table 1 is a photograph showing the state of the substrate after processing the substrate in a state of supporting the substrate using a substrate support holder according to an embodiment of the present invention.
  • the substrate S is not affected by the wire 220, the substrate S It can be seen that the entire area of the) is treated uniformly.
  • the wire 220 is preferably formed of any one selected from aluminum, stainless steel, and titanium in consideration of rigidity and corrosion resistance.
  • the insertion path into which the wire 220 is inserted may be recessed on the upper surface of the susceptor 130.
  • the diameter of the wire 220 is 0.1mm ⁇ to the susceptor 130 without forming the insertion path It is formed in 3 mm.
  • 5 to 8 are views showing the loading of the substrate into the substrate processing apparatus according to an embodiment of the present invention, it will be described.
  • the susceptor 130 is raised to be in contact with the substrate support holder 200 as an initial state.
  • the susceptor 130 is lowered, and then the substrate S is moved by the arm 50 of the robot.
  • the arm 50 of the robot is positioned in the chamber 110 so that the substrate S is positioned above the substrate support holder 200.
  • the arm 50 of the robot is lowered to support the substrate S mounted on the arm 50 of the robot to the wire 220 of the substrate support holder 200.
  • the robot arm 50 is pulled out of the chamber 110, and then the susceptor 130 is raised to support the substrate S with the susceptor 130. What is necessary is just to process the board
  • the susceptor 130 is lowered, and the arm 50 of a robot is inserted below the board
  • the arm 50 of the robot is raised to support the substrate S with the arm 50 of the robot, and then the arm 50 of the robot may be removed from the chamber 110.
  • the substrate support holder 200 supports the lower surface of the substrate S with the wire 220, the substrate S is susceptor 130 when the substrate S is processed. Spaced apart, which will be described with reference to FIG. 9. 9 is an enlarged view of a portion “A” of FIG. 8.
  • the wire 220 of the substrate support holder 200 is placed between the substrate S and the susceptor 130, when the substrate S is processed, the substrate S and the susceptor 130 are processed.
  • the substrate support holder and the substrate processing apparatus using the same support the substrate S by the wire 220 of the substrate support holder 200, and the substrate S mounted on the arm 50 of the robot. ) Is mounted on the susceptor 130, and then the substrate S is processed.
  • the diameter of the wire 220 is 0.1 mm to 3.0 mm, the substrate S is not affected by the wire 220 when the substrate S is processed. Therefore, the whole part of the board
  • the entire portion of the substrate S may be uniformly processed.
  • FIG. 10 is a perspective view of a substrate support holder and a susceptor according to another embodiment of the present invention, and only a difference from FIG. 4 will be described.
  • an end surface 316 having a vertical surface and a horizontal surface may be formed on the lower surface of the inner circumferential surface side of the frame 310 of the substrate support holder 300 according to another embodiment of the present invention.
  • the lower portion of the susceptor 130 is in contact with the horizontal surface of the cross section 316, and the upper portion of the susceptor 130 is positioned inside the frame 310.
  • the wire 320 may be in contact with the substrate supported by the wire 320.
  • FIG. 11 is a perspective view of a substrate support holder according to another embodiment of the present invention.
  • the distance D between the adjacent wires 420 and the wires 420 of the substrate support holder 400 may be provided as 590mm ⁇ 610mm. .
  • the experiment was carried out by mounting and supporting a substrate having a width x length of 1,100 mm x 1,250 mm only in the substrate support holder 400. That is, in a state where the susceptor 130 (refer to FIG. 4) is removed, the substrate is mounted and supported by the wire 420 of the substrate support holder 400.
  • interval D between () is 600 mm
  • the distance D between the wires 420 and the wires 420 adjacent to each other was 700 mm, the center portion of the substrate saged about 11 mm based on the wire 420.
  • the wire 420 is installed in parallel with the longitudinal of the substrate, and has a gap along the horizontal direction of the substrate.
  • the distance (D) between the wires 420 and the wires 420 adjacent to each other is too narrow, a lot of wires 420 are required, the cost increases, and the wires 420 adjacent to each other. Since the substrate may sag if the distance D between the wire 420 and the wire 420 is too wide, the distance D between the wire 420 and the wire 420 adjacent to each other is preferably 590 mm to 610 mm.

Abstract

A substrate support holder and a substrate treatment device using the same are disclosed. According to the present invention, the substrate support holder and the substrate treatment device using the same support a substrate by means of a wire of the substrate support holder so as to load the substrate loaded on an arm of a robot on a susceptor and then treat the substrate. However, the diameter of the wire is formed in an appropriate range such that when the substrate is treated, the substrate is not affected by the wire. Therefore, all the parts of the substrate are uniformly treated, and thus the reliability of the substrate can be improved. That is, if there is a gap of 0.1 mm to 3.0 mm between the substrate and the susceptor when the substrate is treated, all the parts of the substrate are uniformly treated, and thus the reliability of the substrate can be improved.

Description

기판지지홀더 및 이를 사용한 기판처리장치Substrate Support Holder and Substrate Processing Equipment Using the Same
본 발명은 와이어(Wire)를 이용하여 기판을 지지하는 기판지지홀더 및 이를 사용한 기판처리장치에 관한 것이다.The present invention relates to a substrate support holder for supporting a substrate using a wire and a substrate processing apparatus using the same.
기판처리장치는, 반도체 소자, 평판 디스플레이 또는 박막형 태양전지(Solar Cell) 등의 제조시 사용되며, 증착장치(Vapor Deposition Apparatus)와 어닐링장치(Annealing Apparstus) 장치로 대별된다.The substrate processing apparatus is used in the manufacture of semiconductor devices, flat panel displays, thin film solar cells, and the like, and is roughly classified into a vapor deposition apparatus (Annealing Apparstus) and an annealing apparatus (Annealing Apparstus).
도 1은 종래의 기판처리장치의 개략 단면도로서, 이를 설명한다.1 is a schematic cross-sectional view of a conventional substrate processing apparatus, which will be described.
도시된 바와 같이, 종래의 기판처리장치는 기판(S)이 반입되어 처리되는 공간을 제공하는 챔버(11)를 포함하고, 챔버(11)의 내부에는 기판(S)이 탑재 지지되는 서셉터(Susceptor)(13)가 승강가능하게 설치된다.As shown, the conventional substrate processing apparatus includes a chamber 11 which provides a space in which the substrate S is loaded and processed, and a susceptor in which the substrate S is mounted and supported therein. Susceptor) 13 is provided to be elevated.
기판(S)은 로봇의 아암(Arm)에 탑재되어 챔버(11)에 반입되거나, 챔버(11)로부터 반출된다.The board | substrate S is mounted in the arm Arm of a robot, carried in the chamber 11, or carried out from the chamber 11.
로봇의 아암의 상면에 탑재된 기판(S)을 서셉터(13)에 탑재하고자 할 경우, 로봇의 아암을 하강시켜 기판(S)을 서셉터(13)에 탑재한다. 그런데, 로봇의 아암을 하강시키면 로봇의 아암의 하면이 서셉터(13)의 상면과 먼저 접촉하므로 기판(S)을 서셉터(13)에 탑재하기가 어렵다.When the substrate S mounted on the upper surface of the arm of the robot is to be mounted on the susceptor 13, the arm of the robot is lowered to mount the substrate S on the susceptor 13. However, when the arm of the robot is lowered, the lower surface of the arm of the robot contacts the upper surface of the susceptor 13 first, so that it is difficult to mount the substrate S on the susceptor 13.
그리고, 서셉터(13)에 탑재된 기판(S)을 로봇의 아암(Arm)에 탑재하고자 할 경우, 서셉터(13)와 기판(S) 사이로 로봇의 아암을 삽입하여 로봇의 아암을 상승시켜야 한다. 그런데, 서셉터(13)와 기판(S) 사이에는 간격이 존재하지 않으므로 서셉터(13)와 기판(S) 사이로 로봇의 아암을 삽입하기 어렵다.In addition, when the substrate S mounted on the susceptor 13 is to be mounted on the arm Arm of the robot, an arm of the robot must be inserted between the susceptor 13 and the substrate S to raise the arm of the robot. do. By the way, since there is no space | interval between the susceptor 13 and the board | substrate S, it is difficult to insert the arm of a robot between the susceptor 13 and the board | substrate S. FIG.
이러한 이유로, 로봇의 아암(Arm)으로부터 기판(S)을 전달받아 서셉터(13)에 탑재하거나, 서셉터(13)에 탑재된 기판(S)을 서셉터(13)로부터 이격시키기 위한 복수의 지지핀(15)이 서셉터(13)를 관통하는 형태로 설치된다.For this reason, a plurality of substrates S are received from the arm Arm of the robot and mounted on the susceptor 13, or a plurality of substrates S mounted on the susceptor 13 are separated from the susceptor 13. The support pin 15 is installed to pass through the susceptor 13.
즉, 기판(S)을 서셉터(13)에 탑재하고자 할 경우, 서셉터(13)를 하강시켜 지지핀(15)의 상단부를 서셉터(13)의 상면 상측으로 돌출시킨다. 이러한 상태에서, 기판(S)이 탑재된 로봇의 아암이 하강시키면, 로봇의 아암에 탑재된 기판(S)이 지지핀(15)에 지지된다. 그 후, 서셉터(13)를 상승시키면 지지핀(15)에 지지된 기판(S)이 서셉터(13)의 상면에 탑재 지지된다.That is, when the substrate S is to be mounted on the susceptor 13, the susceptor 13 is lowered to protrude the upper end of the support pin 15 onto the upper surface of the susceptor 13. In this state, when the arm of the robot on which the substrate S is mounted is lowered, the substrate S mounted on the arm of the robot is supported by the support pin 15. After that, when the susceptor 13 is raised, the substrate S supported by the support pin 15 is mounted and supported on the upper surface of the susceptor 13.
그리고, 서셉터(13)에 탑재된 기판(S)을 로봇의 아암에 탑재하고자 할 경우, 서셉터(13)를 하강시킨다. 그러면, 지지핀(15)의 상단부가 서셉터(13)의 상면 상측으로 돌출되므로, 지지핀(15)의 상단부에 지지된 기판(S)과 서셉터(13)의 상면 사이에는 간격이 존재한다. 이러한 상태에서, 로봇의 아암을 서셉터(13)와 기판(S) 사이로 삽입한 다음, 로봇의 아암을 상승시키면 로봇의 아암에 기판(S)이 탑재된다.Then, when the substrate S mounted on the susceptor 13 is to be mounted on the arm of the robot, the susceptor 13 is lowered. Then, since the upper end of the support pin 15 protrudes above the upper surface of the susceptor 13, there is a gap between the substrate S supported on the upper end of the support pin 15 and the upper surface of the susceptor 13. . In this state, the arm of the robot is inserted between the susceptor 13 and the substrate S, and then the arm of the robot is raised to mount the substrate S on the arm of the robot.
기판(S)의 처리공정 중에는 파티클이 발생한다. 그리고, 파티클은 지지핀(15)의 외주면 또는 지지핀(15)이 관통하는 서셉터(13)의 관통공(13a)에 증착될 수 있다.Particles are generated during the processing of the substrate S. The particles may be deposited in the outer circumferential surface of the support pin 15 or the through hole 13a of the susceptor 13 through which the support pin 15 passes.
이로 인해, 종래의 기판처리장치는, 지지핀(15) 또는 서셉터(13)의 관통공(13a)에 증착된 파티클에 의하여, 서셉터(13)의 승강시 서셉터(13)와 지지핀(15)이 간섭할 수 있고, 이로 인해 지지핀(15)이 손상될 수 있다. 그리고, 서셉터(13)의 승강시 지지핀(15)이 회전할 수 있으므로, 지지핀(15)에 지지되는 기판(S)의 위치가 정해진 위치로부터 벗어날 수 있다. 이로 인해 생산성이 저하될 수 있다.For this reason, in the conventional substrate processing apparatus, the susceptor 13 and the support pin when the susceptor 13 is raised and lowered by the particles deposited in the support pin 15 or the through hole 13a of the susceptor 13. 15 may interfere, which may damage the support pin 15. In addition, since the support pin 15 may rotate when the susceptor 13 moves up and down, the position of the substrate S supported by the support pin 15 may deviate from a predetermined position. This may lower productivity.
상기와 같은 단점을 해소하기 위하여 복수의 와이어(Wire)를 이용하여 기판(S)을 지지하는 기판처리장치가 개발되어 사용되고 있다.In order to solve the above disadvantages, a substrate processing apparatus for supporting the substrate S by using a plurality of wires has been developed and used.
그런데, 상기 와이어를 이용하여 기판을 서셉터에 탑재하였을 때, 상기 와이어는 기판과 상기 서셉터 사이에 개재된다. 이로 인해, 기판을 상기 서셉터에 탑재하여 처리하였을 때, 상기 와이어가 위치된 기판의 부위와 상기 와이어가 위치되지 않은 기판의 부위가 상호 상이하게 처리될 수 있다. 따라서, 기판에 대한 신뢰성이 저하되는 단점이 있다.By the way, when the substrate is mounted on the susceptor using the wire, the wire is interposed between the substrate and the susceptor. For this reason, when the substrate is mounted on the susceptor and processed, the portion of the substrate where the wire is located and the portion of the substrate where the wire is not positioned may be treated differently. Therefore, there is a disadvantage that the reliability of the substrate is lowered.
기판처리장치와 관련한 선행기술은 한국공개특허공보 제10-2009-0015326호(2009년 2월 12일) 등에 개시되어 있다.Prior arts related to substrate processing apparatuses are disclosed in Korean Patent Publication No. 10-2009-0015326 (February 12, 2009) and the like.
본 발명의 목적은 상기와 같은 종래 기술의 모든 문제점들을 해결할 수 있는 기판지지홀더 및 이를 사용한 기판처리장치를 제공하는 것일 수 있다.An object of the present invention may be to provide a substrate support holder and a substrate processing apparatus using the same that can solve all the problems of the prior art as described above.
본 발명의 다른 목적은 기판을 지지하는 와이어가 위치된 기판의 부위와 와이어가 위치되지 않은 기판의 부위가 균일하게 처리될 수 있도록 구성하여, 기판에 대한 신뢰성을 향상시킬 수 있는 기판지지홀더 및 이를 사용한 기판처리장치를 제공하는 것일 수 있다.Another object of the present invention is to provide a substrate support holder that can improve the reliability of the substrate by configuring so that the portion of the substrate on which the wire for supporting the substrate is located and the portion of the substrate on which the wire is not located can be uniformly processed; It may be to provide a substrate processing apparatus used.
상기 목적을 달성하기 위한 본 발명에 따른 기판지지홀더는, 일면이 개방되어 기판이 탑재된 로봇의 아암이 출입하는 프레임; 상기 프레임의 개방된 일면측 및 개방된 일면과 대향하는 대향면측에 일단부 및 타단부가 각각 지지되어 기판을 지지하는 복수의 와이어(Wire)를 포함하며, 상기 와이어의 직경은 0.1㎜∼3㎜일 수 있다.The substrate support holder according to the present invention for achieving the above object, the frame is open one side of the arm that enters and exits the robot arm on which the substrate is mounted; One end and the other end of the frame is supported on one side of the open side and the opposite side facing the open one, respectively, and includes a plurality of wires (Wire) for supporting the substrate, the diameter of the wire is 0.1mm to 3mm Can be.
또한, 상기 목적을 달성하기 위한 본 발명에 따른 기판처리장치는, 기판이 반입되어 처리되는 공간을 제공하는 챔버; 상기 챔버의 내부에 승강가능하게 설치되며, 상승하여 기판을 탑재 지지하는 서셉터; 상기 서셉터의 상측 상기 챔버의 내부에 설치되며 일면이 개방되어 기판이 탑재된 로봇의 아암이 출입하는 프레임, 상기 프레임의 개방된 일면측 및 개방된 일면과 대향하는 대향면측에 일단부 및 타단부가 각각 지지되어 기판을 지지하는 복수의 와이어(Wire)를 가지고, 상기 서셉터가 승강함에 따라, 로봇의 아암에 탑재된 기판을 전달받아 상기 서셉터의 상면에 탑재시키거나, 상기 서셉터의 상면에 탑재된 기판을 상기 서셉터로부터 이격시키는 기판지지홀더를 포함하며, 상기 와이어의 직경은 0.1㎜∼3㎜일 수 있다.In addition, the substrate processing apparatus according to the present invention for achieving the above object comprises a chamber for providing a space in which the substrate is loaded and processed; A susceptor that is installed to be movable up and down in the chamber, and rises to mount and support a substrate; One end and the other end are installed in the upper side of the susceptor and inside the chamber, one side of which is open, and on which the arm of the robot on which the substrate is mounted enters and exits, one open side of the frame and an opposite side facing the open one. Has a plurality of wires each supporting a substrate, and as the susceptor moves up and down, the substrate mounted on the arm of the robot is received and mounted on the upper surface of the susceptor, or the upper surface of the susceptor. And a substrate support holder spaced apart from the susceptor, and the diameter of the wire may be 0.1 mm to 3 mm.
본 발명의 실시예에 따른 기판지지홀더 및 이를 사용한 기판처리장치는, 기판지지홀더의 와이어로 기판을 지지하여, 로봇의 아암에 탑재된 기판을 서셉터에 탑재한 다음, 기판을 처리한다. 그런데, 와이어의 직경이 0.1㎜~3.0㎜로 형성되므로, 기판의 처리시, 기판은 와이어의 영향을 받지 않는다. 그러므로, 기판의 전체 부위가 균일하게 처리되므로, 기판에 대한 신뢰성이 향상되는 효과가 있을 수 있다.The substrate support holder and the substrate processing apparatus using the same according to the embodiment of the present invention support the substrate by the wire of the substrate support holder, mount the substrate mounted on the arm of the robot in the susceptor, and then process the substrate. By the way, since the diameter of a wire is formed in 0.1 mm-3.0 mm, at the time of processing of a board | substrate, a board | substrate is not influenced by a wire. Therefore, since the entire part of the substrate is treated uniformly, there can be an effect that the reliability of the substrate is improved.
즉, 기판의 처리시, 기판과 서셉터가 0.1㎜~3.0㎜의 간격을 가지면, 기판의 전체 부위가 균일하게 처리되므로, 기판에 대한 신뢰성이 향상되는 효과가 있을 수 있다.That is, when the substrate and the susceptor have a spacing of 0.1 mm to 3.0 mm during processing of the substrate, since the entire portion of the substrate is uniformly processed, reliability of the substrate may be improved.
도 1은 종래의 기판처리장치의 개략 단면도.1 is a schematic cross-sectional view of a conventional substrate processing apparatus.
도 2는 본 발명의 일 실시예에 따른 기판처리장치의 정단면도.2 is a front cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
도 3은 본 발명의 일 실시예에 따른 기판처리장치의 평단면도.3 is a cross-sectional plan view of a substrate processing apparatus according to an embodiment of the present invention.
도 4는 도 3에 도시된 기판지지홀더 및 서셉터의 사시도.4 is a perspective view of the substrate support holder and susceptor shown in FIG.
도 5 내지 도 8은 본 발명의 일 실시예에 따른 기판처리장치에 기판을 반입하는 것을 보인 도.5 to 8 is a view showing the loading of the substrate into the substrate processing apparatus according to an embodiment of the present invention.
도 9는 도 8의 "A"부 확대도.9 is an enlarged view of a portion “A” of FIG. 8.
도 10은 본 발명의 다른 실시예에 따른 기판지지홀더 및 서셉터의 사시도.10 is a perspective view of a substrate support holder and susceptor according to another embodiment of the present invention.
도 11은 본 발명의 또 다른 실시예에 따른 기판지지홀더의 사시도.11 is a perspective view of a substrate support holder according to another embodiment of the present invention.
본 명세서에서 각 도면의 구성요소들에 참조번호를 부가함에 있어서 동일한 구성 요소들에 한해서는 비록 다른 도면상에 표시되더라도 가능한 한 동일한 번호를 가지도록 하고 있음에 유의하여야 한다.In the present specification, in adding reference numerals to the components of each drawing, it should be noted that the same components have the same number as much as possible even though they are displayed on different drawings.
한편, 본 명세서에서 서술되는 용어의 의미는 다음과 같이 이해되어야 할 것이다.On the other hand, the meaning of the terms described herein will be understood as follows.
단수의 표현은 문맥상 명백하게 다르게 정의하지 않는 한 복수의 표현을 포함하는 것으로 이해되어야 하고, "제1", "제2" 등의 용어는 하나의 구성요소를 다른 구성요소로부터 구별하기 위한 것으로, 이들 용어들에 의해 권리범위가 한정되어서는 아니 된다.Singular expressions should be understood to include plural expressions unless the context clearly indicates otherwise, and the terms “first”, “second”, etc. are used to distinguish one component from another. The scope of the rights shall not be limited by these terms.
"포함하다" 또는 "가지다" 등의 용어는 하나 또는 그 이상의 다른 특징이나 숫자, 단계, 동작, 구성요소, 부분품 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 미리 배제하지 않는 것으로 이해되어야 한다.It is to be understood that the term "comprises" or "having" does not preclude the existence or addition of one or more other features or numbers, steps, operations, components, parts or combinations thereof.
"적어도 하나"의 용어는 하나 이상의 관련 항목으로부터 제시 가능한 모든 조합을 포함하는 것으로 이해되어야 한다. 예를 들어, "제1항목, 제2항목 및 제3항목 중에서 적어도 하나"의 의미는 제1항목, 제2항목 또는 제3항목 각각 뿐만 아니라 제1항목, 제2항목 및 제3항목 중에서 2개 이상으로부터 제시될 수 있는 모든 항목의 조합을 의미한다.The term "at least one" should be understood to include all combinations which can be presented from one or more related items. For example, the meaning of "at least one of the first item, the second item, and the third item" means not only the first item, the second item, or the third item, but also two of the first item, the second item, and the third item. A combination of all items that can be presented from more than one.
"및/또는"의 용어는 하나 이상의 관련 항목으로부터 제시 가능한 모든 조합을 포함하는 것으로 이해되어야 한다. 예를 들어, "제1항목, 제2항목 및/또는 제3항목"의 의미는 제1항목, 제2항목 또는 제3항목뿐만 아니라 제1항목, 제2항목 또는 제3항목들 중 2개 이상으로부터 제시될 수 있는 모든 항목의 조합을 의미한다.The term “and / or” should be understood to include all combinations that can be presented from one or more related items. For example, the meaning of "first item, second item and / or third item" means two items of first item, second item or third item as well as first item, second item or third item. It means a combination of all items that can be presented from the above.
어떤 구성요소가 다른 구성요소에 "연결된다 또는 설치된다"고 언급된 때에는, 그 다른 구성요소에 직접적으로 연결 또는 설치될 수도 있지만, 중간에 다른 구성요소가 존재할 수도 있다고 이해되어야 할 것이다. 반면에, 어떤 구성요소가 다른 구성요소에 "직접 연결된다 또는 설치된다"라고 언급된 때에는 중간에 다른 구성요소가 존재하지 않는 것으로 이해되어야 할 것이다. 한편, 구성요소들 간의 관계를 설명하는 다른 표현들, 즉 "∼사이에"와 "바로 ∼사이에" 또는 "∼에 이웃하는"과 "∼에 직접 이웃하는" 등도 마찬가지로 해석되어야 한다.When a component is referred to as being "connected or installed" to another component, it should be understood that there may be other components in between, although it may be directly connected or installed to the other component. On the other hand, when a component is referred to as "directly connected or installed" to another component, it should be understood that no other component exists in the middle. On the other hand, other expressions describing the relationship between the elements, that is, "between" and "immediately between" or "neighboring to" and "directly neighboring to", and the like, should be interpreted as well.
이하에서는, 본 발명의 실시예들에 따른 기판지지홀더 및 이를 사용한 기판처리장치에 대하여 첨부된 도면을 참조하여 상세히 설명한다.Hereinafter, a substrate support holder and a substrate processing apparatus using the same according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 2는 본 발명의 일 실시예에 따른 기판처리장치의 정단면도이고, 도 3은 본 발명의 일 실시예에 따른 기판처리장치의 평단면도이며, 도 4는 도 3에 도시된 기판지지홀더 및 서셉터의 사시도이다.2 is a front sectional view of a substrate processing apparatus according to an embodiment of the present invention, FIG. 3 is a plan sectional view of the substrate processing apparatus according to an embodiment of the present invention, and FIG. 4 is a substrate support holder shown in FIG. A perspective view of the susceptor.
도시된 바와 같이, 본 발명의 일 실시예에 따른 기판처리장치는 기판(S)(도 6 참조)이 반입(搬入)되어 처리되는 공간을 제공하는 챔버(110)를 포함할 수 있고, 챔버(110)는 상면이 개방된 챔버 월(Wall)(111)과 챔버 월(111)의 개방된 상면에 결합된 리드(Lid)(115)를 포함할 수 있다.As shown, the substrate processing apparatus according to one embodiment of the present invention may include a chamber 110 that provides a space in which the substrate S (see FIG. 6) is carried in and processed, and the chamber ( 110 may include a chamber wall 111 having an upper surface opened and a lid 115 coupled to an open upper surface of the chamber wall 111.
챔버 월(111)의 일측면에는 기판(S)이 탑재된 로봇의 아암(50)(도 6 참조)이 출입하는 출입구(111a)가 형성될 수 있고, 챔버 월(111)의 하면측에는 반응에 참여하지 않은 공정가스와 부산물 등을 배출시키기 위한 배출구(111b)가 형성될 수 있다.One side of the chamber wall 111 may be formed with an entrance and exit 111a through which the arm 50 (see FIG. 6) of the robot on which the substrate S is mounted enters and exits. A discharge port 111b may be formed to discharge process gas and by-products that do not participate.
챔버(110)의 내부 상측인 리드(115)측에는 기판(S)에 형성하기 위한 박막용 공정가스를 분사하는 샤워헤드(121)가 설치될 수 있고, 리드(115)의 상면에는 공정가스를 샤워헤드(121)로 공급하기 위한 가스공급관(125)이 설치될 수 있다.A shower head 121 for injecting a thin film process gas to be formed in the substrate S may be installed at the lid 115, the upper side of the chamber 110, and the process gas is showered on the upper surface of the lid 115. A gas supply pipe 125 for supplying the head 121 may be installed.
챔버(110)의 내부 하측인 챔버 월(111)의 내부 하면측에는 기판(S)이 탑재 지지되는 서셉터(130)가 설치될 수 있고, 서셉터(130)는 모터 또는 실린더 등과 같은 구동수단에 의하여 승강 및 회전가능하게 설치될 수 있다. 서셉터(130)의 내부에는 기판(S)을 처리하기 위한 공정 중에 기판(S)을 적절하게 가열하기 위한 히터 등이 설치될 수 있다.A susceptor 130 on which the substrate S is mounted and supported may be installed at an inner lower surface side of the chamber wall 111, which is a lower side of the chamber 110, and the susceptor 130 is provided to a driving means such as a motor or a cylinder. It can be installed to be elevated and rotatable. In the susceptor 130, a heater or the like may be installed to appropriately heat the substrate S during a process for treating the substrate S.
기판(S)은 챔버(110)의 외측에 적재 보관된다. 이때, 챔버(110)의 외측에 적재된 기판(S)은 로봇의 아암(50)에 탑재되어 챔버(110)로 반입된 후 서셉터(130)에 탑재되고, 서셉터(130)에 탑재된 기판(S)은 로봇의 아암(50)에 탑재되어 챔버(110)로부터 반출된다.The substrate S is loaded and stored on the outside of the chamber 110. At this time, the substrate S loaded on the outside of the chamber 110 is mounted on the arm 50 of the robot and loaded into the chamber 110, then mounted on the susceptor 130, and mounted on the susceptor 130. The substrate S is mounted on the arm 50 of the robot and taken out from the chamber 110.
그런데, 로봇의 아암(50)에 탑재된 기판(S)을 서셉터(130)에 직접 탑재시키기 어렵고, 서셉터(130)에 탑재된 기판(S)을 로봇의 아암(50)에 직접 탑재시키기 어렵다. 이로 인해, 챔버(110)에는 로봇의 아암(50)에 탑재된 기판(S)을 전달받아 서셉터(130)에 탑재시키고, 서셉터(130)에 탑재된 기판(S)을 서셉터(130)로부터 이격시키기 위한 기판지지홀더(200)가 설치될 수 있다.However, it is difficult to directly mount the substrate S mounted on the arm 50 of the robot to the susceptor 130, and to mount the substrate S mounted on the susceptor 130 directly to the arm 50 of the robot. It is difficult. Thus, the substrate 110 receives the substrate S mounted on the arm 50 of the robot and is mounted on the susceptor 130, and the susceptor 130 mounts the substrate S mounted on the susceptor 130. The substrate support holder 200 may be installed to be spaced apart from each other.
기판지지홀더(200)는 프레임(210)과 복수의 와이어(220)를 포함할 수 있으며, 서셉터(130) 상측의 챔버(110)의 챔버 월(111)의 내면에 지지 설치될 수 있다.The substrate support holder 200 may include a frame 210 and a plurality of wires 220, and may be supported and installed on an inner surface of the chamber wall 111 of the chamber 110 above the susceptor 130.
프레임(210)은 사각형상으로 형성될 수 있으며, 출입구(111a)가 형성된 챔버 월(111)의 면과 대향하는 일면(210a)은 개방되어 기판(S)이 탑재된 로봇의 아암(50)이 출입할 수 있다. 프레임(210)의 일면(210a)은 전체 부위가 개방될 수 있고, 일 부위가 개방될 수 있다. 그리고, 프레임(210)은 챔버 월(111)의 내면에 설치된 복수의 지지핀(113)에 하면이 접촉 지지되며, 프레임(210)의 하면에는 지지핀(113)이 삽입되는 지지홈(212)이 형성될 수 있다. 이때, 복수의 지지핀(113)은 서셉터(130)를 기준으로 동일 높이에 형성되어야 함은 당연하다.The frame 210 may be formed in a quadrangular shape, and one surface 210a facing the surface of the chamber wall 111 on which the doorway 111a is formed may be opened to allow the arm 50 of the robot on which the substrate S is mounted. Can enter and exit. One surface 210a of the frame 210 may have an entire portion open, and one portion may be opened. In addition, the frame 210 is supported by the lower surface of the plurality of support pins 113 installed on the inner surface of the chamber wall 111, and the support grooves 212 into which the support pins 113 are inserted into the lower surface of the frame 210. This can be formed. At this time, it is obvious that the plurality of support pins 113 should be formed at the same height based on the susceptor 130.
와이어(220)는 프레임(210)의 개방된 일면(210a)측 및 개방된 일면(210a)과 대향하는 대향면(210b)측에 일단부 및 타단부가 각각 지지되어 기판(S)을 지지할 수 있다. 즉, 와이어(220)는 챔버(110)를 출입하는 로봇의 아암(50)의 출입방향과 평행하게 설치될 수 있다.The wire 220 is supported at one end and the other end on the open side (210a) of the frame 210 and on the side of the opposite surface (210b) facing the open surface (210a), respectively, to support the substrate (S). Can be. That is, the wire 220 may be installed in parallel with the entrance direction of the arm 50 of the robot entering and leaving the chamber 110.
서셉터(130)는 상측 부위가 하측 부위 보다 작은 크기로 형성될 수 있으며, 기판지지홀더(200)는 서셉터(130)에 의하여 승강할 수 있다.The susceptor 130 may have an upper portion having a smaller size than the lower portion, and the substrate support holder 200 may be elevated by the susceptor 130.
상세히 설명하면, 서셉터(130)가 상승하면, 서셉터(130)의 하측 부위 테두리부는 프레임(210)의 하면과 접촉할 수 있고, 서셉터(130)의 상측 부위는 프레임(210)의 내부에 위치되어 와이어(220) 및 와이어(220)에 지지된 기판(S)과 접촉할 수 있다. 그러므로, 서셉터(130)가 상승하여, 서셉터(130)의 하측 부위 테두리부가 프레임(210)의 하면과 접촉하면, 서셉터(130)에 의하여 프레임(210)이 상승한다. 그리고, 서셉터(130)에 의하여 상승된 프레임(210)은 서셉터(130)가 하강하면 하강한다. 그러므로, 서셉터(130)의 승강에 의하여 기판지지홀더(200)가 승강하는 것이다.In detail, when the susceptor 130 is raised, the lower edge portion of the susceptor 130 may contact the lower surface of the frame 210, and the upper portion of the susceptor 130 may be inside the frame 210. The wire 220 may be in contact with the wire 220 and the substrate S supported by the wire 220. Therefore, when the susceptor 130 rises and the lower edge portion of the susceptor 130 contacts the bottom surface of the frame 210, the susceptor 130 raises the frame 210. The frame 210 raised by the susceptor 130 descends when the susceptor 130 descends. Therefore, the substrate support holder 200 is lifted by the lift of the susceptor 130.
와이어(220)가 처지지 않아야 와이어(220)의 전체 부위가 기판(S)을 지지할 수 있다. 이를 위하여, 프레임(210)에는 와이어(220)를 지지함과 동시에 와이어(220)의 장력을 조절하기 위한 장력조절모듈(230)이 설치될 수 있다.The entire portion of the wire 220 may support the substrate S when the wire 220 does not sag. To this end, the frame 210 may be provided with a tension control module 230 for supporting the wire 220 and at the same time adjust the tension of the wire 220.
장력조절모듈(230)은 프레임(210)의 개방된 일면(210a) 및 대향면(210b)에 각각 설치되어 상호 대향할 수 있으며, 와이어(220)의 일단부측 및 타단부측을 각각 지지함과 동시에 와이어(220)의 장력을 조절할 수 있다.The tension control module 230 may be installed on each of the open surface 210a and the opposing surface 210b of the frame 210 to face each other, and support one end side and the other end side of the wire 220, respectively. At the same time, the tension of the wire 220 can be adjusted.
프레임(210)의 개방된 일면(210a)으로는 로봇의 아암(50)이 출입하므로, 프레임(210)의 개방된 일면(210a)에 장력조절모듈(230)이 설치되었을 때, 장력조절모듈(230)이 로봇의 아암(50)의 운동을 간섭하지 않아야 한다. 이를 위하여, 프레임(210)의 개방된 일면(210a)에는 프레임(210)의 개방된 일면(210a) 일측 및 타측을 연결함과 동시에 장력조절모듈(230)이 설치되는 브라켓(214)이 설치될 수 있다.Since the arm 50 of the robot enters and exits from the open surface 210a of the frame 210, when the tension control module 230 is installed on the open surface 210a of the frame 210, the tension control module ( 230 should not interfere with the movement of the arm 50 of the robot. To this end, an open surface 210a of the frame 210 connects one side and the other side of the open surface 210a of the frame 210 and a bracket 214 to which the tension control module 230 is installed is installed. Can be.
장력조절모듈(230)은 지지블럭(231)과 조절너트(235)를 포함할 수 있다.The tension control module 230 may include a support block 231 and an adjustment nut 235.
지지블럭(231)은 브라켓(214) 및 대향면(210b)에 각각 설치될 수 있으며, 브라켓(214)에 설치된 지지블럭(231)에는 와이어(220)이 일단부측이 관통하면서 지지될 수 있고, 대항면(210b)에 설치된 지지블럭(231)에는 와이어(220)의 타단부측이 관통하면서 지지될 수 있다.The support block 231 may be installed on the bracket 214 and the opposing surface 210b, respectively, and the support block 231 installed on the bracket 214 may be supported while the wire 220 passes through one end thereof. The other end side of the wire 220 may be supported while passing through the support block 231 installed on the opposing surface 210b.
그리고, 조절너트(235)는 지지블럭(231)을 관통한 와이어(220)의 단부측에 각각 회전가능하게 결합되며, 회전함에 따라 지지블럭(235)을 기준으로 와이어(220)를 신축(伸縮)시킬 수 있다. 즉, 조절너트(235)는 정역회전함에 따라 지지블럭(235)과 지지블럭(235) 사이의 와이어(220)를 신축(伸縮)시킬 수 있다. 조절너트(235)의 회전에 의하여 와이어(220)가 신축될 수 있도록, 와이어(220)의 양단부측 외주면에는 조절너트(235)의 나선(Spiral)과 맞물리는 나선이 각각 형성될 수 있다. 와이어(220)의 직경이 너무 작으므로 인하여, 와이어(220)의 외주면에 나선을 형성하기 어려울 경우, 와이어(220)의 단부측에 나사를 연결하고, 상기 나사에 조절너트(235)를 체결할 수 있다. 그리하여, 와이어(220)가 처지지 않고 직선을 유지하도록, 조절너트(235)를 이용하여 와이어(220)의 장력을 조절하면, 와이어(220)의 전체 부위에 기판(S)이 접촉 지지될 수 있다.In addition, the adjustment nut 235 is rotatably coupled to the end side of the wire 220 passing through the support block 231, and expands and contracts the wire 220 based on the support block 235 as it rotates. You can. That is, the adjustment nut 235 can stretch and contract the wire 220 between the support block 235 and the support block 235 as the forward and reverse rotation. In order to allow the wire 220 to be stretched and contracted by the rotation of the adjustment nut 235, spirals that engage with spirals of the adjustment nut 235 may be formed on the outer circumferential surfaces of both ends of the wire 220. If the diameter of the wire 220 is too small, it is difficult to form a spiral on the outer circumferential surface of the wire 220, the screw is connected to the end side of the wire 220, and the adjustment nut 235 is fastened to the screw Can be. Thus, when the tension of the wire 220 is adjusted using the adjusting nut 235 so that the wire 220 does not sag and maintains a straight line, the substrate S may be contacted and supported on the entire portion of the wire 220. have.
지지블럭(231)과 조절너트(235) 사이에는 조절너트(235)를 지지블럭(231)의 외측으로 탄성 지지하는 탄성부재(237)가 설치될 수 있다.An elastic member 237 may be installed between the support block 231 and the adjustment nut 235 to elastically support the adjustment nut 235 to the outside of the support block 231.
비표시영역인 기판(S)의 테두리부는 프레임(210)의 상면 내주면측에 접촉 지지될 수 있다. 이때, 프레임(210)의 상면과 와이어(220)의 최상측 외주면은 서셉터(130)를 기준으로 또는 프레임(210)의 하면을 기준으로 동일 높이에 위치되는 것이 바람직하다.The edge portion of the substrate S, which is a non-display area, may be in contact with and supported on the inner peripheral surface side of the upper surface of the frame 210. At this time, the upper surface of the frame 210 and the outermost outer peripheral surface of the wire 220 is preferably located at the same height relative to the susceptor 130 or the lower surface of the frame 210.
기판지지홀더(200)를 이용하여 기판(S)을 서셉터(130)에 탑재한 다음, 기판(S)을 처리할 때, 서셉터(130)와 기판(S) 사이에 와이어(220)가 게재된다. 이때, 와이어(220)의 직경이 적절하지 않으면, 와이어(220)가 위치된 기판(S)의 부위와 와이어(220)가 위치되지 않은 기판(S)의 부위가 상호 상이하게 처리될 수 있다.After the substrate S is mounted on the susceptor 130 by using the substrate support holder 200, the wire 220 is disposed between the susceptor 130 and the substrate S when the substrate S is processed. Is published. In this case, if the diameter of the wire 220 is not appropriate, the portion of the substrate S on which the wire 220 is located and the portion of the substrate S on which the wire 220 is not positioned may be treated differently.
본 발명의 일 실시예에 따른 기판지지홀더 및 이를 사용한 기판처리장치는, 기판(S)의 전체 부위가 균일하게 처리될 수 있도록, 와이어(220)의 직경을 0.1㎜∼3㎜로 형성할 수 있다. 와이어(220)의 직경을 0.1㎜∼3㎜로 형성한 이유는, 와이어(220)의 직경이 0.1㎜ 미만이면 와이어(220)이 강성이 약할 수 있고, 와이어(220)의 직경이 3㎜를 초과하면 와이어(220)가 위치된 기판(S)의 부위가 변색되어 기판(S)의 균일성이 저하될 수 있기 때문이다.In the substrate support holder and the substrate processing apparatus using the same according to an embodiment of the present invention, the diameter of the wire 220 may be formed to be 0.1 mm to 3 mm so that the entire portion of the substrate S may be uniformly processed. have. The reason why the diameter of the wire 220 is formed to be 0.1 mm to 3 mm is that if the diameter of the wire 220 is less than 0.1 mm, the wire 220 may have weak rigidity, and the diameter of the wire 220 may be 3 mm. This is because when the portion of the substrate S on which the wire 220 is located is discolored, the uniformity of the substrate S may decrease.
본 발명의 일 실시예에 따른 기판지지홀더(200)가 설치된 기판처리장치로 기판(S)을 처리한 실험 결과에 대하여 설명한다.An experimental result of processing the substrate S with the substrate processing apparatus provided with the substrate support holder 200 according to an embodiment of the present invention will be described.
실험 조건은, 반도체 소자를 제조하는 공정인, 플라즈마를 이용하여 기판에 박막을 증착시키는 일반적인 PECVD(Plasma Enhanced Chemical Vapor Depostion) 공정 조건 및 화학 반응을 이용하여 기판상에 금속 산화막을 형성하는 일반적인 MOCVD(Metal Organic Chemical Vapor Deposition) 공정 조건하에서 수행하였다.Experimental conditions include general plasma enhanced chemical vapor deposition (PECVD) process conditions for depositing a thin film on a substrate using plasma, a process for manufacturing a semiconductor device, and general MOCVD (metal oxide film) formed on a substrate using a chemical reaction. Metal Organic Chemical Vapor Deposition) under the process conditions.
표 1은 본 발명의 일 실시예에 따른 기판지지홀더를 사용하여 기판을 지지한 상태에서 기판을 처리한 후의 기판 상태를 보인 사진이다.Table 1 is a photograph showing the state of the substrate after processing the substrate in a state of supporting the substrate using a substrate support holder according to an embodiment of the present invention.
Figure PCTKR2016007562-appb-T000001
Figure PCTKR2016007562-appb-T000001
표 1에 표시된 바와 같이, 기판지지홀더(200)의 와이어(220)의 직경이 0.1㎜, 1.0㎜ 및 3.0㎜인 경우, 각각 기판(S)에 변색 등이 발생하지 않았고, 기판(S)의 전체면이 균일하게 처리되었다. 반면, 기판지지홀더(200)의 와이어(220)의 직경이4.0㎜일 경우, 와이어(220)가 위치된 기판(S)의 부위가 변색되었다.As shown in Table 1, when the diameters of the wires 220 of the substrate support holder 200 were 0.1 mm, 1.0 mm, and 3.0 mm, no discoloration or the like occurred in the substrate S, respectively. The entire surface was treated uniformly. On the other hand, when the diameter of the wire 220 of the substrate support holder 200 is 4.0mm, the portion of the substrate S on which the wire 220 is located is discolored.
그러므로, 본 발명의 일 실시예에 따른 기판지지홀더(200)의 와이어(220)의 직경이 0.1㎜∼3㎜인 경우, 기판(S)은 와이어(220)의 영향을 받지 않고, 기판(S)의 전체 부위가 균일하게 처리됨을 알 수 있다.Therefore, when the diameter of the wire 220 of the substrate support holder 200 according to an embodiment of the present invention is 0.1mm to 3mm, the substrate S is not affected by the wire 220, the substrate S It can be seen that the entire area of the) is treated uniformly.
본 발명의 일 실시예에 따른 와이어(220)는 강성 및 내부식성 등을 고려하여, 알루미늄, 스테인리스 스틸 및 티타늄 중에서 선택된 어느 하나로 형성하는 것이 바람직하다.The wire 220 according to an embodiment of the present invention is preferably formed of any one selected from aluminum, stainless steel, and titanium in consideration of rigidity and corrosion resistance.
서셉터(130)와 기판(S) 사이에 게재된 와이어(220)로 인하여, 와이어(220)가 위치된 기판(S)의 부위와 와이어(220)가 위치되지 않은 기판(S)의 부위가 상호 상이하게 처리되는 것을 방지하기 위하여, 서셉터(130)의 상면에 와이어(220)가 삽입되는 삽입로를 함몰 형성할 수 있다. 그러나, 서셉터(130)에 상기 삽입로를 형성할 경우, 승강하는 서셉터(130)의 상기 삽입로에 와이어(220)의 전체 부위가 정확하게 삽입되기 어렵다. 그러면, 상기 삽입로에 삽입되지 않은 와이어(220) 부위로 인하여, 기판(S)이 더욱 불균일하게 처리될 수 있다. 이러한 문제점을 해소하기 위하여, 본 발명의 일 실시예에 따른 기판지지홀더 및 이를 사용한 기판처리장치는, 서셉터(130)에 상기 삽입로를 형성하지 않고, 와이어(220)의 직경을 0.1㎜∼3㎜로 형성한 것이다.Due to the wire 220 placed between the susceptor 130 and the substrate S, the portion of the substrate S where the wire 220 is located and the portion of the substrate S where the wire 220 is not located In order to prevent different processing from each other, the insertion path into which the wire 220 is inserted may be recessed on the upper surface of the susceptor 130. However, when the insertion path is formed in the susceptor 130, it is difficult to accurately insert the entire portion of the wire 220 into the insertion path of the susceptor 130 to be elevated. Then, due to the portion of the wire 220 not inserted into the insertion path, the substrate S may be treated more non-uniformly. In order to solve this problem, the substrate support holder and substrate processing apparatus using the same according to an embodiment of the present invention, the diameter of the wire 220 is 0.1mm ~ to the susceptor 130 without forming the insertion path It is formed in 3 mm.
도 5 내지 도 8은 본 발명의 일 실시예에 따른 기판처리장치에 기판을 반입하는 것을 보인 도로서, 이를 설명한다.5 to 8 are views showing the loading of the substrate into the substrate processing apparatus according to an embodiment of the present invention, it will be described.
도 5에 도시된 바와 같이, 서셉터(130)가 상승하여 기판지지홀더(200)와 접촉된 상태를 최초의 상태라 가정한다. 최초의 상태에서, 기판(S)을 서셉터(130)에 탑재하기 위해서는, 도 6에 도시된 바와 같이, 서셉터(130)를 하강시킨 다음, 로봇의 아암(50)으로 기판(S)을 지지하여, 기판(S)이 기판지지홀더(200)의 상측에 위치되도록 로봇의 아암(50)을 챔버(110)에 위치시킨다.As shown in FIG. 5, it is assumed that the susceptor 130 is raised to be in contact with the substrate support holder 200 as an initial state. In the initial state, in order to mount the substrate S on the susceptor 130, as shown in FIG. 6, the susceptor 130 is lowered, and then the substrate S is moved by the arm 50 of the robot. By supporting, the arm 50 of the robot is positioned in the chamber 110 so that the substrate S is positioned above the substrate support holder 200.
그 후, 도 7에 도시된 바와 같이, 로봇의 아암(50)을 하강시켜 로봇의 아암(50)에 탑재된 기판(S)을 기판지지홀더(200)의 와이어(220)에 지지시킨다.Thereafter, as shown in FIG. 7, the arm 50 of the robot is lowered to support the substrate S mounted on the arm 50 of the robot to the wire 220 of the substrate support holder 200.
그리고, 도 8에 도시된 바와 같이, 로봇의 아암(50)을 챔버(110)의 외측으로 빼낸 다음, 서셉터(130)를 상승시켜 서셉터(130)로 기판(S)을 지지한 다음, 기판(S)을 처리하면 된다.As shown in FIG. 8, the robot arm 50 is pulled out of the chamber 110, and then the susceptor 130 is raised to support the substrate S with the susceptor 130. What is necessary is just to process the board | substrate S.
기판(S)을 챔버(110)로부터 반출하기 위해서는, 도 8에 도시된 상태에서, 서셉터(130)를 하강시킨 다음, 기판(S)의 하측으로 로봇의 아암(50)을 삽입한다. 그 후, 로봇의 아암(50)을 상승시켜, 로봇의 아암(50)으로 기판(S)을 지지한 다음, 로봇의 아암(50)을 챔버(110)로부터 빼면 된다.In order to carry out the board | substrate S from the chamber 110, in the state shown in FIG. 8, the susceptor 130 is lowered, and the arm 50 of a robot is inserted below the board | substrate S. FIG. Thereafter, the arm 50 of the robot is raised to support the substrate S with the arm 50 of the robot, and then the arm 50 of the robot may be removed from the chamber 110.
본 발명의 일 실시예에 따른 기판지지홀더(200)는 와이어(220)로 기판(S)의 하면을 받쳐서 지지하므로, 기판(S)의 처리시에는, 기판(S)이 서셉터(130)로부터 이격되는데, 이를 도 9를 참조하여 설명한다. 도 9는 도 8의 "A"부 확대도이다.Since the substrate support holder 200 according to the exemplary embodiment of the present invention supports the lower surface of the substrate S with the wire 220, the substrate S is susceptor 130 when the substrate S is processed. Spaced apart, which will be described with reference to FIG. 9. 9 is an enlarged view of a portion “A” of FIG. 8.
도시된 바와 같이, 기판지지홀더(200)의 와이어(220)가 기판(S)과 서셉터(130) 사이에 게재되므로, 기판(S)의 처리시에는, 기판(S)과 서셉터(130)가 간격(D)을 가진다. 이때, 기판(S)과 서셉터(130) 사이의 간격(D)은 와이어(220)의 직경에 해당하는 0.1㎜∼3㎜ 임은 당연하다.As shown, since the wire 220 of the substrate support holder 200 is placed between the substrate S and the susceptor 130, when the substrate S is processed, the substrate S and the susceptor 130 are processed. ) Has an interval D. At this time, it is natural that the distance D between the substrate S and the susceptor 130 is 0.1 mm to 3 mm corresponding to the diameter of the wire 220.
이는, 기판(S)의 처리시, 기판(S)과 서셉터(130)가 0.1㎜∼3㎜ 의 간격을 가지면, 기판(S)은 전체 부위가 균일하게 처리되는 것을 의미할 수 있다.This may mean that when the substrate S and the susceptor 130 have an interval of 0.1 mm to 3 mm, the entire area of the substrate S may be uniformly processed.
본 발명의 일 실시예에 따른 기판지지홀더 및 이를 사용한 기판처리장치는 기판지지홀더(200)의 와이어(220)로 기판(S)을 지지하여, 로봇의 아암(50)에 탑재된 기판(S)을 서셉터(130)에 탑재한 다음, 기판(S)을 처리한다. 그런데, 와이어(220)의 직경이 0.1㎜~3.0㎜로 형성되므로, 기판(S)의 처리시, 기판(S)은 와이어(220)의 영향을 받지 않는다. 그러므로, 기판(S)의 전체 부위가 균일하게 처리될 수 있다.The substrate support holder and the substrate processing apparatus using the same according to an embodiment of the present invention support the substrate S by the wire 220 of the substrate support holder 200, and the substrate S mounted on the arm 50 of the robot. ) Is mounted on the susceptor 130, and then the substrate S is processed. However, since the diameter of the wire 220 is 0.1 mm to 3.0 mm, the substrate S is not affected by the wire 220 when the substrate S is processed. Therefore, the whole part of the board | substrate S can be processed uniformly.
즉, 기판(S)의 처리시, 기판(S)과 서셉터(130)가 0.1㎜~3.0㎜의 간격을 가지면, 기판(S)의 전체 부위가 균일하게 처리될 수 있다.That is, when the substrate S and the susceptor 130 have an interval of 0.1 mm to 3.0 mm when the substrate S is processed, the entire portion of the substrate S may be uniformly processed.
도 10은 본 발명의 다른 실시예에 따른 기판지지홀더 및 서셉터의 사시도로서, 도 4와의 차이점만을 설명한다.FIG. 10 is a perspective view of a substrate support holder and a susceptor according to another embodiment of the present invention, and only a difference from FIG. 4 will be described.
도시된 바와 같이, 본 발명의 다른 실시예에 따른 기판지지홀더(300)의 프레임(310)의 내주면측 하면에는 수직면과 수평면을 가지는 단면(段面)(316)이 형성될 수 있다. 그리고, 서셉터(130)가 상승하면, 서셉터(130)의 하측 부위 테두리부는 단면(316)의 상기 수평면과 접촉하고, 서셉터(130)의 상측 부위는 프레임(310)의 내부에 위치되어 와이어(320) 및 와이어(320)에 지지된 기판과 접촉할 수 있다.As shown, an end surface 316 having a vertical surface and a horizontal surface may be formed on the lower surface of the inner circumferential surface side of the frame 310 of the substrate support holder 300 according to another embodiment of the present invention. When the susceptor 130 is raised, the lower portion of the susceptor 130 is in contact with the horizontal surface of the cross section 316, and the upper portion of the susceptor 130 is positioned inside the frame 310. The wire 320 may be in contact with the substrate supported by the wire 320.
도 11은 본 발명의 또 다른 실시예에 따른 기판지지홀더의 사시도로서, 이를 설명한다.11 is a perspective view of a substrate support holder according to another embodiment of the present invention.
도시된 바와 같이, 본 발명의 또 다른 실시예에 따른 기판지지홀더(400)의 상호 인접하는 와이어(420)와 와이어(420) 사이의 간격(D)은 590㎜∼610㎜로 마련될 수 있다.As shown, the distance D between the adjacent wires 420 and the wires 420 of the substrate support holder 400 according to another embodiment of the present invention may be provided as 590mm ~ 610mm. .
상세히 설명하면, 가로 x 세로가 1,100㎜ x 1,250㎜인 기판을 기판지지홀더(400)에만 탑재 지지하여 실험해 보았다. 즉, 서셉터(130)(도 4 참조)를 제거한 상태에서, 기판지지홀더(400)의 와이어(420)에 기판을 탑재 지지하여 실험해 본 결과, 상호 인접하는 와이어(420)와 와이어(420) 사이의 간격(D)이 600㎜인 경우는 기판의 중앙부측이 와이어(420)를 기준으로 약 2㎜ 정도 처짐이 발생하였다. 그러나, 상호 인접하는 와이어(420)와 와이어(420) 사이의 간격(D)이 700㎜인 경우는 기판의 중앙부측이 와이어(420)를 기준으로 약 11㎜ 정도 처짐이 발생하였다.In detail, the experiment was carried out by mounting and supporting a substrate having a width x length of 1,100 mm x 1,250 mm only in the substrate support holder 400. That is, in a state where the susceptor 130 (refer to FIG. 4) is removed, the substrate is mounted and supported by the wire 420 of the substrate support holder 400. When the space | interval D between () is 600 mm, about 2 mm sag occurred in the center part side of the board | substrate with respect to the wire 420. However, when the distance D between the wires 420 and the wires 420 adjacent to each other was 700 mm, the center portion of the substrate saged about 11 mm based on the wire 420.
이때, 와이어(420)는 기판의 세로와 평행을 이루면서 설치되며, 기판의 가로 방향을 따라 간격을 가진다.In this case, the wire 420 is installed in parallel with the longitudinal of the substrate, and has a gap along the horizontal direction of the substrate.
상기와 같은 실험의 결과, 상호 인접하는 와이어(420)와 와이어(420) 사이의 간격(D)이 너무 좁으면 많은 와이어가(420)가 필요하므로 원가가 상승하고, 상호 인접하는 와이어(420)와 와이어(420) 사이의 간격(D)이 너무 넓으면 기판이 처질 수 있으므로, 상호 인접하는 와이어(420)와 와이어(420) 사이의 간격(D)은 590㎜∼610㎜인 것이 바람직하다.As a result of the above experiment, if the distance (D) between the wires 420 and the wires 420 adjacent to each other is too narrow, a lot of wires 420 are required, the cost increases, and the wires 420 adjacent to each other. Since the substrate may sag if the distance D between the wire 420 and the wire 420 is too wide, the distance D between the wire 420 and the wire 420 adjacent to each other is preferably 590 mm to 610 mm.
이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것은 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다. 그러므로, 본 발명의 범위는 후술하는 특허청구범위에 의하여 나타내어지며, 특허청구범위의 의미 및 범위 그리고 그 등가 개념으로부터 도출되는 모든 변경 또는 변형된 형태가 본 발명의 범위에 포함되는 것으로 해석되어야 한다.The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the art that various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention. It will be evident to those who have knowledge of. Therefore, the scope of the present invention is represented by the following claims, and it should be construed that all changes or modifications derived from the meaning and scope of the claims and equivalent concepts thereof are included in the scope of the present invention.

Claims (16)

  1. 일면이 개방되어 기판이 탑재된 로봇의 아암이 출입하는 프레임;A frame on which one side is opened to allow the arm of the robot on which the substrate is mounted to enter and exit;
    상기 프레임의 개방된 일면측 및 개방된 일면과 대향하는 대향면측에 일단부 및 타단부가 각각 지지되어 기판을 지지하는 복수의 와이어(Wire)를 포함하며,One end and the other end is supported on one open side of the frame and on the opposite surface opposite to the open one, and includes a plurality of wires supporting the substrate.
    상기 와이어의 직경은 0.1㎜∼3㎜인 것을 특징으로 하는 기판지지홀더.And a diameter of the wire is 0.1 mm to 3 mm.
  2. 제1항에 있어서,The method of claim 1,
    상기 프레임의 개방된 일면측 및 상기 프레임의 개방된 일면과 대향하는 대향면에는 상기 와이어의 일단부측 및 타단부측을 각각 지지함과 동시에 상기 와이어의 장력을 조절하기 위한 장력조절모듈이 상호 대향되게 설치된 것을 특징으로 하는 기판지지홀더.On one side of the open side of the frame and on the opposite side of the open side of the frame, one end side and the other end side of the wire are respectively supported and a tension control module for adjusting the tension of the wires face each other. Substrate support holder, characterized in that installed.
  3. 제2항에 있어서,The method of claim 2,
    상기 프레임의 개방된 일면에는 상기 프레임의 개방된 일면 일측 및 타측을 연결함과 동시에 상기 장력조절모듈이 설치되는 브라켓이 설치된 것을 특징으로 하는 기판지지홀더.The one side and the other side of the open one side of the frame is connected to the substrate support holder, characterized in that the bracket for installing the tension control module is installed at the same time.
  4. 제3항에 있어서,The method of claim 3,
    상기 와이어의 양단부측에는 나선(Spiral)이 형성되고,Spiral is formed on both ends of the wire,
    상기 장력조절모듈은,The tension control module,
    상기 브라켓 및 상기 프레임의 개방된 일면과 대향하는 대향면에 각각 설치되며, 상기 와이어의 단부측이 관통하면서 지지되는 지지블럭;A support block installed on opposite surfaces of the bracket and the open one surface of the frame and supported by an end of the wire;
    상기 지지블럭을 관통한 상기 와이어의 단부측에 각각 회전가능하게 결합되며 회전함에 따라 상기 지지블럭을 기준으로 상기 와이어를 신축(伸縮)시키는 조절너트를 포함하는 것을 특징으로 하는 기판지지홀더.And an adjusting nut rotatably coupled to an end side of the wire passing through the support block, the adjusting nut extending and contracting the wire with respect to the support block as it rotates.
  5. 제1항에 있어서,The method of claim 1,
    상기 프레임의 상면과 상기 와이어의 최상측 외주면은 상기 프레임의 하면을 기준으로 동일 높이에 위치된 것을 특징으로 하는 기판지지홀더.And an upper surface of the frame and an outermost peripheral surface of the wire at the same height with respect to the lower surface of the frame.
  6. 제1항에 있어서,The method of claim 1,
    상호 인접하는 상기 와이어와 상기 와이어 사이의 간격은 590㎜∼610㎜인 것을 특징으로 하는 기판지지홀더.And a space between the wires adjacent to each other and the wires is 590 mm to 610 mm.
  7. 기판이 반입되어 처리되는 공간을 제공하는 챔버;A chamber providing a space in which the substrate is loaded and processed;
    상기 챔버의 내부에 승강가능하게 설치되며, 상승하여 기판을 탑재 지지하는 서셉터;A susceptor that is installed to be movable up and down in the chamber, and rises to mount and support a substrate;
    상기 서셉터의 상측 상기 챔버의 내부에 설치되고 일면이 개방되어 기판이 탑재된 로봇의 아암이 출입하는 프레임, 상기 프레임의 개방된 일면측 및 개방된 일면과 대향하는 대향면측에 일단부 및 타단부가 각각 지지되며, 상기 서셉터가 승강함에 따라, 로봇의 아암에 탑재된 기판을 전달받아 상기 서셉터의 상면에 탑재시키거나, 상기 서셉터의 상면에 탑재된 기판을 상기 서셉터로부터 이격시키는 기판지지홀더를 포함하며,One end and the other end of the frame installed inside the chamber on the upper side of the susceptor, the one side of which is open, and on which the arm of the robot on which the substrate is mounted enters, the one side of the frame and the other side of the frame facing the opened one. Are respectively supported, and as the susceptor moves up and down, a substrate mounted on an arm of the robot is received and mounted on an upper surface of the susceptor, or a substrate spaced apart from the susceptor is mounted on the upper surface of the susceptor. Including a support holder,
    상기 와이어의 직경은 0.1㎜∼3㎜인 것을 특징으로 하는 기판처리장치.A substrate processing apparatus characterized in that the diameter of the wire is 0.1mm to 3mm.
  8. 제7항에 있어서,The method of claim 7, wherein
    상기 프레임의 개방된 일면측 및 상기 프레임의 개방된 일면과 대향하는 대향면에는 상기 와이어의 일단부측 및 타단부측을 각각 지지함과 동시에 상기 와이어의 장력을 조절하기 위한 장력조절모듈이 상호 대향되게 설치된 것을 특징으로 하는 기판처리장치.On one side of the open side of the frame and on the opposite side of the open side of the frame, one end side and the other end side of the wire are respectively supported and a tension control module for adjusting the tension of the wires face each other. Substrate processing apparatus, characterized in that installed.
  9. 제8항에 있어서,The method of claim 8,
    상기 프레임의 개방된 일면에는 상기 프레임의 개방된 일면 일측 및 타측을 연결함과 동시에 상기 장력조절모듈이 설치되는 브라켓이 설치된 것을 특징으로 하는 기판처리장치.A substrate processing apparatus according to claim 1, wherein one side of the frame and one side of the other side of the frame are connected to each other, and a bracket to which the tension control module is installed is installed at one side of the frame.
  10. 제9항에 있어서,The method of claim 9,
    상기 와이어의 양단부측에는 나선(Spiral)이 형성되고,Spiral is formed on both ends of the wire,
    상기 장력조절모듈은,The tension control module,
    상기 브라켓 및 상기 프레임의 개방된 일면과 대향하는 대향면에 각각 설치되며, 상기 와이어의 단부측이 관통하면서 지지되는 지지블럭;A support block installed on opposite surfaces of the bracket and the open one surface of the frame and supported by an end of the wire;
    상기 지지블럭을 관통한 상기 와이어의 단부측에 각각 회전가능하게 결합되며 회전함에 따라 상기 지지블럭을 기준으로 상기 와이어를 신축(伸縮)시키는 조절너트를 포함하는 것을 특징으로 하는 기판처리장치.And an adjusting nut rotatably coupled to an end side of the wire passing through the support block, the adjusting nut extending and contracting the wire with respect to the support block as it rotates.
  11. 제7항에 있어서,The method of claim 7, wherein
    상기 프레임의 상면과 상기 와이어의 최상측 외주면은 상기 프레임의 하면을 기준으로 동일 높이에 위치된 것을 특징으로 하는 기판처리장치.And the upper surface of the frame and the outermost outer peripheral surface of the wire are positioned at the same height with respect to the lower surface of the frame.
  12. 제7항에 있어서,The method of claim 7, wherein
    상호 인접하는 상기 와이어와 상기 와이어 사이의 간격은 590㎜∼610㎜인 것을 특징으로 하는 기판처리장치.Substrate processing apparatus, characterized in that the interval between the wire and the wire adjacent to each other are 590mm to 610mm.
  13. 제7항에 있어서,The method of claim 7, wherein
    상기 기판지지홀더는 상기 서셉터에 의하여 승강하는 것을 특징으로 하는 기판처리장치.And the substrate support holder is elevated by the susceptor.
  14. 제13항에 있어서,The method of claim 13,
    상기 서셉터는 상측 부위가 하측 부위 보다 작은 크기로 형성되고,The susceptor has an upper portion formed in a size smaller than the lower portion,
    상기 서셉터가 상승하면, 상기 서셉터의 하측 부위 테두리부는 상기 프레임의 하면과 접촉하고 상기 서셉터의 상측 부위는 상기 프레임의 내부에 위치되어 상기 와이어 및 상기 와이어에 지지된 기판과 접촉하는 것을 특징으로 하는 기판처리장치.When the susceptor is raised, the lower edge portion of the susceptor is in contact with the lower surface of the frame, and the upper portion of the susceptor is positioned in the frame to contact the wire and the substrate supported by the wire. Substrate processing apparatus to be.
  15. 제13항에 있어서,The method of claim 13,
    상기 서셉터는 상측 부위가 하측 부위 보다 작은 크기로 형성되고,The susceptor has an upper portion formed in a size smaller than the lower portion,
    상기 프레임의 내주면측 하면에는 수직면과 수평면을 가지는 단면(段面)이 형성되며,A cross section having a vertical plane and a horizontal plane is formed on the lower surface of the inner circumferential surface side of the frame,
    상기 서셉터가 상승하면, 상기 서셉터의 하측 부위 테두리부는 상기 단면의 상기 수평면과 접촉하고 상기 서셉터의 상측 부위는 상기 프레임의 내부에 위치되어 상기 와이어 및 상기 와이어에 지지된 기판과 접촉하는 것을 특징으로 하는 기판처리장치.When the susceptor is raised, the lower edge portion of the susceptor is in contact with the horizontal plane of the cross section and the upper portion of the susceptor is positioned inside the frame to contact the wire and the substrate supported by the wire. Substrate processing apparatus characterized by.
  16. 제7항에 있어서,The method of claim 7, wherein
    상기 챔버의 내면에는 상기 프레임의 하면을 지지하는 복수의 지지핀이 설치되고,The inner surface of the chamber is provided with a plurality of support pins for supporting the lower surface of the frame,
    상기 프레임의 하면에는 상기 지지핀이 삽입되는 지지홈이 형성된 것을 특징으로 하는 기판처리장치.And a support groove into which the support pin is inserted is formed on the bottom surface of the frame.
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KR101000602B1 (en) * 2002-11-27 2010-12-10 도쿄엘렉트론가부시키가이샤 Substrate processing apparatus
KR20140028579A (en) * 2012-08-29 2014-03-10 세메스 주식회사 Apparatus for treating substrate
KR20150026758A (en) * 2013-08-29 2015-03-11 박성우 Wire rack for flat plate loading of the wire tensioning device

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Publication number Priority date Publication date Assignee Title
JP2000150333A (en) * 1998-11-18 2000-05-30 Tokyo Electron Ltd Substrate heat treatment apparatus
KR101000602B1 (en) * 2002-11-27 2010-12-10 도쿄엘렉트론가부시키가이샤 Substrate processing apparatus
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KR20150026758A (en) * 2013-08-29 2015-03-11 박성우 Wire rack for flat plate loading of the wire tensioning device

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