WO2015005607A1 - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
WO2015005607A1
WO2015005607A1 PCT/KR2014/005880 KR2014005880W WO2015005607A1 WO 2015005607 A1 WO2015005607 A1 WO 2015005607A1 KR 2014005880 W KR2014005880 W KR 2014005880W WO 2015005607 A1 WO2015005607 A1 WO 2015005607A1
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WO
WIPO (PCT)
Prior art keywords
reaction tube
support
substrate
disposed
processing apparatus
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Application number
PCT/KR2014/005880
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French (fr)
Korean (ko)
Inventor
양일광
송병규
김용기
김경훈
신양식
Original Assignee
주식회사 유진테크
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Publication of WO2015005607A1 publication Critical patent/WO2015005607A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D5/00—Supports, screens, or the like for the charge within the furnace
    • F27D5/0037—Supports specially adapted for semi-conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

Definitions

  • the present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus provided with a blocking plate and a blocking ring to supply a predetermined process gas to each substrate contained in a chamber.
  • the semiconductor device has many layers on a silicon substrate, and these layers are deposited on the substrate through a deposition process.
  • This deposition process has several issues, and these issues are important for evaluating the deposited films and selecting the deposition method.
  • the first is the 'quality' of the deposited film. This means composition, contamination levels, defect density, and mechanical and electrical properties.
  • the composition of the films can vary depending on the deposition conditions, which is very important for obtaining a specific composition.
  • the second is uniform thickness across the wafer.
  • the thickness of the film deposited on the nonplanar pattern on which the step is formed is very important. Whether the thickness of the deposited film is uniform may be determined through step coverage defined by dividing the minimum thickness deposited on the stepped portion by the thickness deposited on the upper surface of the pattern.
  • Another issue with deposition is filling space. This includes gap filling between the metal lines with an insulating film including an oxide film. The gap is provided to physically and electrically insulate the metal lines.
  • uniformity is one of the important issues associated with the deposition process, and non-uniform films result in high electrical resistance on metal lines and increase the likelihood of mechanical failure.
  • An object of the present invention is to supply a constant process gas to each substrate in the chamber.
  • Another object of the present invention is to supply a uniform process gas to each substrate to perform a uniform process of the substrates.
  • the substrate processing apparatus the substrate is transferred through a passage formed on one side, the upper portion of the chamber of the open shape;
  • An inner reaction tube connected to the chamber to provide an inner space in which a process for the substrate is made, and having a plurality of support tips protruding along an inner surface;
  • a boat having a vertical frame in which a plurality of support slots are formed along a vertical direction, the boat capable of lifting in the inner space;
  • Blocking plates disposed on the vertical frame and disposed between the support slots and disposed above the support slots at the uppermost end and below the support slots at the lower end;
  • Blocking rings which are respectively placed on an upper portion of the support tip and protrude toward the inside of the inner reaction tube from the support tip;
  • An injection nozzle inserted into one side of the inner reaction tube and disposed along a vertical direction of the inner reaction tube and positioned between the support tips to supply a process gas toward the substrate;
  • an exhaust nozzle inserted into the other side of the inner reaction tube and disposed along the up and down direction
  • the blocking plate may have a larger outer diameter when disposed in a downward direction, and the blocking ring may have a larger inner diameter when disposed in a downward direction.
  • Centers of the blocking plate and the blocking ring may be the same as each other.
  • the boat includes a loading position for sequentially loading the substrate transferred through the passage into each of the support slots; And the substrate is positioned between the support tips, and each blocking ring is contacted with each blocking plate to be spaced apart from the support tip and can be switched to a process position for partitioning the inner space into a plurality of reaction spaces.
  • the substrate processing apparatus includes: a supply port formed at an upper portion of the passage and supplying the process gas to the injection nozzle; And an exhaust port formed at the other side of the passage and configured to exhaust the process gas sucked through the exhaust nozzle to the outside.
  • the substrate processing apparatus further includes an auxiliary exhaust port formed on the other side of the chamber, wherein a lower end of the internal reaction tube is connected to a bottom surface of the chamber, and a supply hole communicating with the passage and the auxiliary exhaust port, respectively; It may have an exhaust hole.
  • the support tip may be disposed above the supply hole.
  • the substrate processing apparatus further includes an outer reaction tube disposed outside the inner reaction tube and closing the open upper portion of the chamber, wherein the injection nozzle and the exhaust nozzle are disposed inside the outer reaction tube.
  • An injection port of the injection nozzle and an exhaust port of the exhaust nozzle may be located inside the internal reaction tube.
  • the blocking plate provided in the boat and the blocking ring installed in the inner reaction tube are interposed between the substrate and the substrate accommodated in the vertical direction, respectively, it is possible to supply a constant process gas to each partitioned reaction space. have. Therefore, by performing a uniform process on each substrate, it is possible to ensure the productivity and quality of the substrate.
  • FIG. 1 is a view showing a general substrate processing apparatus.
  • FIG. 2 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention.
  • 3 to 5 are diagrams illustrating an operation process of the substrate processing apparatus shown in FIG. 2.
  • FIG. 6 is a view showing a flow state of a process gas of the substrate processing apparatus shown in FIG. 5.
  • FIGS. 1 to 6 Embodiments of the invention may be modified in various forms, the scope of the invention should not be construed as limited to the embodiments described below. These embodiments are provided to explain in detail the present invention to those skilled in the art. Accordingly, the shape of each element shown in the drawings may be exaggerated to emphasize a more clear description.
  • the substrate processing apparatus 100 includes a chamber 10 having an open top shape, and a passage 8 is formed at one side of the chamber 10, so that the substrate S is a passage. It may be loaded into the chamber 10 through (8).
  • the gate valve (not shown) may be installed outside the passage 8, and the passage 8 may be opened and closed by the gate valve.
  • the substrate processing apparatus 100 includes a boat 20 on which a plurality of substrates S are stacked, and the substrates S transferred through the passage 8 are sequentially loaded in the vertical direction on the boat 20. .
  • the lifting shaft 70 is connected to the lower part of the boat 20, and the lifting shaft 70 can be lifted by the lifting motor 79 through the bottom surface of the chamber 10.
  • the lifting shaft 70 may be provided with a rotary motor 72 so that the boat 20 is rotatable, the rotary motor 72 is installed on the motor housing 74 to rotate the motor during the process ( The boat 20 and the substrates W may be rotated together by driving 72 to rotate the lifting shaft 70. This is because the reaction gas flows from the injection port 42 toward the exhaust port 47, and as the deposition on the substrate S proceeds from the injection port 42 side to the exhaust port 47 side, the concentration of the process gas tends to decrease. This is to prevent this.
  • the motor housing 74 is fixed to the bracket 75, and one side of the bracket 75 may be connected to the lifting rod 77 installed at the lower portion of the chamber 10 to move up and down along the lifting rod 77.
  • the bracket 75 is screwed to the lifting rod 77, and the lifting rod 77 is rotated by the lifting motor 79.
  • the elevating rod 77 rotates by the rotation of the elevating motor 79, thereby allowing the bracket 75 and the motor housing 74 to elevate together.
  • the other side of the bracket 75 is connected to the guide rod 78 installed in parallel with the lifting rod 77, the bracket 75 can be easily lifted by the lifting rod 77 and the guide rod 78. .
  • the lifting shaft 70 and the boat can be lifted together, the boat 20 is a loading position and the boat 20 is loaded on the boat 20 by the substrate (W) sequentially by the lifting motor 79 As it rises, it may be switched to a process position where the process of the substrate W is performed.
  • the bellows 60 connects the chamber 10 and the motor housing 74 to each other, thereby maintaining airtightness inside the chamber 10.
  • the injection holes 42 of the injection nozzles 40 are inserted along the inner wall of the inner reaction tube 50 and are disposed at different heights. Therefore, the process gas supplied from the injection nozzle 40 flows toward the exhaust nozzle 45 located on the opposite side, thereby ensuring sufficient time for the process gas and the surface of the substrate S to react. At this time, the unreacted gas and the reaction by-products generated during the process are sucked out through the exhaust nozzle 45 and discharged.
  • the substrate processing apparatus 100 capable of supplying a predetermined process gas to each substrate S will be described, and the omitted components and operation processes of the substrate processing apparatus 100 described later are described above. Can be replaced with
  • the boat 20 includes a vertical frame 25 having a plurality of support slots 27 formed along the vertical direction, and an upper frame 22 and a lower frame 29 connected to upper and lower portions of the vertical frame 25, respectively. It can be provided.
  • the upper frame 22 and the lower frame 29 may be circular corresponding to the shape of the substrate (S).
  • the vertical frame 25 is provided in plurality in order to easily load the substrate S transferred through the passage 8, and may sequentially load the substrate S in the support slots 27 formed in the vertical direction.
  • the support slots 27 formed on each vertical frame 25 are formed in parallel with each other, and between the support slots 27 formed on the horizontal line and above the support slots located at the top and the bottom of the support slots located at the bottom thereof.
  • Blocking plates 30 are installed. Each blocking plate 30 has the same center as each other, the larger the outer plate is disposed in the downward direction.
  • the internal reaction tube 50 may be connected on the bottom surface of the chamber 10.
  • the internal reaction tube 50 may have a shape protruding upward and may have a cylindrical shape with an open bottom.
  • the supply hole 51 formed in the inner reaction tube communicates with the passage 8 and the inner space, and the exhaust hole 54 formed in the inner reaction tube communicates with the auxiliary exhaust port 53 and the inner space.
  • the inner wall of the inner reaction tube 50 is provided with a plurality of support tips 55 protruding toward the inside, the support tips 55 may be disposed above the supply hole 51.
  • the support tips 55 may be installed at one side and the other side of the inner wall of the inner reaction tube 50 at predetermined intervals along the up and down direction, respectively, and the support tips 55 disposed at one side and the other side are arranged side by side. .
  • Blocking rings 35 are respectively placed on the upper portions of the support tips 55 facing each other.
  • the injection holes 42 of the injection nozzles 40 are respectively inserted into the inner wall of the inner reaction tube 50 and are disposed at different heights along the vertical direction of the inner reaction tube 50.
  • Exhaust ports 47 of the exhaust nozzles 45 are also disposed on the opposite side of the injection port 42 and inserted into the inner wall of the inner reaction tube 50, and are disposed at different heights along the vertical direction of the inner reaction tube 50. Is placed.
  • the injection port 42 and the exhaust port 47 of the same height have a symmetrical structure, and the injection port 42 and the exhaust nozzle 45 of the injection nozzle 40 centering on the substrate S loaded on the boat 20. Vents 47 are located opposite each other.
  • An injection port 42 of the injection nozzle 40 and an exhaust port 47 of the exhaust nozzle 45 are disposed between the respective support tips 55.
  • the base flange 6 may be installed above the chamber 10.
  • a supply port 43 is formed at one side of the base flange 6, and the supply port 43 is connected to the injection nozzle 40 to supply process gas to the injection nozzle 40.
  • an exhaust port 49 is formed at the other side of the base flange 6, and the exhaust port 49 is connected to the exhaust nozzle 45 so that the unreacted gas and the reaction by-products sucked through the exhaust nozzle 45 to the outside. Can be exhausted.
  • An external reaction tube 58 may be installed on the upper portion of the base flange 6, and the external reaction tube 58 may be disposed outside the injection nozzle 40 and the exhaust nozzle 45 to open the chamber 10. The upper part can be closed.
  • the chamber cover 5 may be installed outside the external reaction tube 58, and the chamber cover 5 may include a heater (not shown) for heating the substrate S.
  • An auxiliary gas supply port 44 is formed at one side of the bottom of the chamber 10, and the auxiliary gas supply port 44 is connected to an auxiliary gas supply line (not shown) to supply gas supplied through the auxiliary gas supply line to the chamber ( 10) can be supplied.
  • an inert gas may be supplied into the chamber 10 through the auxiliary gas supply port 44, and supplying the inert gas prevents the process gas from flowing to the bottom of the boat 20 converted to the process position. can do.
  • 3 to 5 are diagrams illustrating an operation process of the substrate processing apparatus shown in FIG. 2.
  • 3 is a view showing the loading position of the boat
  • Figures 4 and 5 are views showing a state in which the boat is switched from the loading position to the process position.
  • the substrates S transferred through the passage 8 are loaded on the support slots 27 of the boat 20, respectively.
  • the substrate S which is raised at a predetermined interval by the lifting motor 79 of the boat 20, and transferred through the passage 8, moves downward from the support slot 27 formed at the top thereof. Can be loaded sequentially.
  • the boat 20 on which the substrate S is loaded is raised toward the jet nozzle 40.
  • a plurality of support slots 27 are formed on the vertical frame 25 of the boat 20, and the blocking plates 30 are respectively provided on the support slots 27.
  • the centers of the blocking plates 30 coincide with each other, and the blocking plates 30 have a larger outer diameter as they are disposed in the downward direction.
  • the internal reaction tube 50 provides an internal space 2 in which a process for the substrate S is made, and the support tips 55 installed on the inner wall of the internal reaction tube 50 are formed of the injection nozzle 40.
  • the injection holes 42 and the exhaust nozzles 45 are disposed above and below the exhaust ports 47, respectively.
  • the blocking ring 35 is placed on the upper portion of the support tip 55, and the center of each of the blocking rings 35 has a larger inner diameter as it is disposed in the downward direction in agreement with each other.
  • each blocking plate 30 abuts with the blocking ring 35 placed on the support tip 55. Accordingly, each blocking plate 30 is raised to a predetermined height in contact with each blocking ring 35 to partition the internal space (2) into a plurality of reaction space (4). Therefore, each reaction space 4 can supply the same process gas as the interference of each other is minimized.
  • FIG. 6 is a view showing a flow state of a process gas of the substrate processing apparatus shown in FIG. 5.
  • each blocking ring 35 abuts on an upper portion of each blocking plate 30 to be spaced apart from the support tip 55, and each of the inner space 2 is separated. It is switched to the process position partitioned by the reaction space 4 in which the process for the substrate S is performed.
  • a uniform process is performed on each substrate S by supplying a process gas to each reaction space 4 through each blocking plate 30 and a blocking ring 35. Productivity and quality of the substrate S can be secured.
  • the present invention can be applied to various types of semiconductor manufacturing equipment and manufacturing methods.

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Abstract

A substrate processing apparatus, according to one embodiment of the present invention, comprises: a chamber; an internal reaction tube; a boat; blocking plates; blocking rings; injection nozzles; and exhaust nozzles. The chamber has a path formed on one side thereof such that a substrate is transported through the path, and has an open-topped shape. The internal reaction tube is connected to the chamber and provides an internal space in which the process for the substrate is performed, and has a plurality of support tips which protrude along the inner surface thereof. The boat has a vertical frame, on which a plurality of support slots are formed along the longitudinal direction, and can be elevated in the internal space. The blocking plates are separately installed on the vertical frame, and are disposed between the support slots, on the upper portion of the uppermost support slot, and on the lower portion of the bottommost support slot. The blocking rings are respectively disposed on the upper portion of the support tips, and protrude from the support tips towards the inner side of the internal reaction tube. The injection nozzles are inserted and installed on one side of the internal reaction tube, are disposed along the longitudinal direction of the internal reaction tube, are positioned between the support tips, and supply a process gas towards the substrate. The exhaust nozzles are inserted and installed on the other side of the internal reaction tube, are disposed along the longitudinal direction of the internal reaction tube, are positioned between the support tips, and exhaust the process gas.

Description

기판 처리장치Substrate Processing Equipment
본 발명은 기판 처리장치에 관한 것으로, 더욱 상세하게는 챔버 내에 수용된 각각의 기판에 일정한 공정가스를 공급가능하도록 차단판 및 차단링이 구비된 기판 처리장치에 관한 것이다.The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus provided with a blocking plate and a blocking ring to supply a predetermined process gas to each substrate contained in a chamber.
반도체 장치는 실리콘 기판 상에 많은 층들(layers)을 가지고 있으며, 이와 같은 층들은 증착공정을 통하여 기판상에 증착된다. 이와 같은 증착공정은 몇가지 이슈들을 가지며, 이와 같은 이슈들은 증착된 막들을 평가하고 증착방법을 선택하는 데 있어서 중요하다.The semiconductor device has many layers on a silicon substrate, and these layers are deposited on the substrate through a deposition process. This deposition process has several issues, and these issues are important for evaluating the deposited films and selecting the deposition method.
첫번째는 증착된 막의 '질'(quality)이다. 이는 조성(composition), 오염도(contamination levels), 손실도(defect density), 그리고 기계적, 전기적 특성(mechanical and electrical properties)을 의미한다. 막들의 조성은 증착조건에 따라 변할 수 있으며, 이는 특정한 조성(specific composition)을 얻기 위하여 매우 중요하다.The first is the 'quality' of the deposited film. This means composition, contamination levels, defect density, and mechanical and electrical properties. The composition of the films can vary depending on the deposition conditions, which is very important for obtaining a specific composition.
두번째는, 웨이퍼를 가로지르는 균일한 두께(uniform thickness)이다. 특히, 단차(step)가 형성된 비평면(nonplanar) 형상의 패턴 상부에 증착된 막의 두께가 매우 중요하다. 증착된 막의 두께가 균일한지 여부는 단차진 부분에 증착된 최소 두께를 패턴의 상부면에 증착된 두께로 나눈 값으로 정의되는 스텝 커버리지(step coverage)를 통하여 판단할 수 있다.The second is uniform thickness across the wafer. In particular, the thickness of the film deposited on the nonplanar pattern on which the step is formed is very important. Whether the thickness of the deposited film is uniform may be determined through step coverage defined by dividing the minimum thickness deposited on the stepped portion by the thickness deposited on the upper surface of the pattern.
증착과 관련된 또 다른 이슈는 공간을 채우는 것(filling space)이다. 이는 금속라인들 사이를 산화막을 포함하는 절연막으로 채우는 갭 필링(gap filling)을 포함한다. 갭은 금속라인들을 물리적 및 전기적으로 절연시키기 위하여 제공된다.Another issue with deposition is filling space. This includes gap filling between the metal lines with an insulating film including an oxide film. The gap is provided to physically and electrically insulate the metal lines.
이와 같은 이슈들 중 균일도는 증착공정과 관련된 중요한 이슈 중 하나이며, 불균일한 막은 금속배선(metal line) 상에서 높은 전기저항(electrical resistance)을 가져오며, 기계적인 파손의 가능성을 증가시킨다.Among these issues, uniformity is one of the important issues associated with the deposition process, and non-uniform films result in high electrical resistance on metal lines and increase the likelihood of mechanical failure.
본 발명의 목적은 챔버 내의 각각의 기판에 일정한 공정가스를 공급하는 데 있다.An object of the present invention is to supply a constant process gas to each substrate in the chamber.
본 발명의 다른 목적은 각각의 기판에 일정한 공정가스를 공급하여 기판들의 균일한 공정을 수행하는 데 있다.Another object of the present invention is to supply a uniform process gas to each substrate to perform a uniform process of the substrates.
본 발명의 또 다른 목적들은 다음의 상세한 설명과 첨부한 도면으로부터 보다 명확해질 것이다.Still other objects of the present invention will become more apparent from the following detailed description and the accompanying drawings.
본 발명의 일 실시예에 의하면, 기판 처리장치는, 일측에 형성된 통로를 통해 기판이 이송되며, 상부가 개방된 형상의 챔버; 상기 챔버에 연결되어 상기 기판에 대한 공정이 이루어지는 내부공간을 제공하며, 내측면을 따라 돌출되는 복수의 지지팁들을 가지는 내부반응튜브; 상하방향을 따라 복수의 지지슬롯들이 형성되는 수직프레임을 가지며, 상기 내부공간 내에서 승강가능한 보트; 상기 수직프레임상에 이격설치되며, 상기 지지슬롯들의 사이 및 최상단의 상기 지지슬롯의 상부, 그리고 최하단의 상기 지지슬롯의 하부에 배치되는 차단플레이트들; 상기 지지팁의 상부에 각각 놓여져 상기 지지팁으로부터 상기 내부반응튜브의 내측을 향해 돌출되는 차단링들; 상기 내부반응튜브의 일측에 삽입설치되어 상기 내부반응튜브의 상하방향을 따라 배치되며, 상기 지지팁들의 사이에 위치하여 상기 기판을 향해 공정가스를 공급하는 분사노즐; 및 상기 내부반응튜브의 타측에 삽입설치되어 상기 내부반응튜브의 상하방향을 따라 배치되며, 상기 지지팁들의 사이에 위치하여 상기 공정가스를 배기하는 배기노즐을 포함한다.According to one embodiment of the invention, the substrate processing apparatus, the substrate is transferred through a passage formed on one side, the upper portion of the chamber of the open shape; An inner reaction tube connected to the chamber to provide an inner space in which a process for the substrate is made, and having a plurality of support tips protruding along an inner surface; A boat having a vertical frame in which a plurality of support slots are formed along a vertical direction, the boat capable of lifting in the inner space; Blocking plates disposed on the vertical frame and disposed between the support slots and disposed above the support slots at the uppermost end and below the support slots at the lower end; Blocking rings which are respectively placed on an upper portion of the support tip and protrude toward the inside of the inner reaction tube from the support tip; An injection nozzle inserted into one side of the inner reaction tube and disposed along a vertical direction of the inner reaction tube and positioned between the support tips to supply a process gas toward the substrate; And an exhaust nozzle inserted into the other side of the inner reaction tube and disposed along the up and down direction of the inner reaction tube and positioned between the support tips to exhaust the process gas.
상기 차단플레이트는 하방향에 배치될수록 큰 외경을 가지며, 상기 차단링은 하방향에 배치될수록 큰 내경을 가질 수 있다.The blocking plate may have a larger outer diameter when disposed in a downward direction, and the blocking ring may have a larger inner diameter when disposed in a downward direction.
상기 차단플레이트 및 상기 차단링의 중심은 각각 서로 동일할 수 있다.Centers of the blocking plate and the blocking ring may be the same as each other.
상기 보트는 상기 통로를 통해 이송된 상기 기판을 각각의 상기 지지슬롯에 순차적으로 적재하는 적재위치; 및 상기 기판이 상기 지지팁들 사이에 위치하며, 각각의 상기 차단링이 각각의 상기 차단플레이트와 맞닿아 상기 지지팁으로부터 이격되고 상기 내부공간을 복수의 반응공간으로 구획하는 공정위치로 전환 가능할 수 있다.The boat includes a loading position for sequentially loading the substrate transferred through the passage into each of the support slots; And the substrate is positioned between the support tips, and each blocking ring is contacted with each blocking plate to be spaced apart from the support tip and can be switched to a process position for partitioning the inner space into a plurality of reaction spaces. have.
상부로부터 k번째 차단플레이트의 외경은 k번째 차단링의 내경보다 크고, k+1번째 차단링의 내경보다 작을 수 있다.(k = 1, 2, 3 ... n)The outer diameter of the k th blocking plate from the top may be larger than the inner diameter of the k th blocking ring and smaller than the inner diameter of the k + 1 th blocking ring (k = 1, 2, 3 ... n).
상기 기판 처리장치는, 상기 통로의 상부에 형성되며, 상기 분사노즐에 상기 공정가스를 공급하는 공급포트; 및 상기 통로의 타측에 형성되며, 상기 배기노즐을 통해 흡입된 상기 공정가스를 외부로 배기하는 배기포트를 더 포함할 수 있다.The substrate processing apparatus includes: a supply port formed at an upper portion of the passage and supplying the process gas to the injection nozzle; And an exhaust port formed at the other side of the passage and configured to exhaust the process gas sucked through the exhaust nozzle to the outside.
상기 기판 처리장치는 상기 챔버의 타측에 형성되는 보조배기포트를 더 포함하되, 상기 내부반응튜브의 하단은 상기 챔버의 바닥면에 연결되며, 상기 통로 및 상기 보조배기포트와 각각 연통되는 공급홀 및 배기홀을 가질 수 있다.The substrate processing apparatus further includes an auxiliary exhaust port formed on the other side of the chamber, wherein a lower end of the internal reaction tube is connected to a bottom surface of the chamber, and a supply hole communicating with the passage and the auxiliary exhaust port, respectively; It may have an exhaust hole.
상기 지지팁은 상기 공급홀의 상부에 배치될 수 있다.The support tip may be disposed above the supply hole.
상기 기판 처리장치는, 상기 내부반응튜브의 외측에 배치되며, 상기 챔버의 개방된 상부를 폐쇄하는 외부반응튜브를 더 포함하되, 상기 분사노즐 및 상기 배기노즐은 상기 외부반응튜브의 내측에 배치되어 상기 분사노즐의 분사구 및 상기 배기노즐의 배기구가 상기 내부반응튜브의 내부에 위치할 수 있다.The substrate processing apparatus further includes an outer reaction tube disposed outside the inner reaction tube and closing the open upper portion of the chamber, wherein the injection nozzle and the exhaust nozzle are disposed inside the outer reaction tube. An injection port of the injection nozzle and an exhaust port of the exhaust nozzle may be located inside the internal reaction tube.
본 발명의 일 실시예에 의하면, 보트 내에 구비된 차단플레이트 및 내부반응튜브 내에 설치된 차단링을 통해 상하방향으로 각각 수용된 기판과 기판 사이를 차단하여 각각의 구획된 반응공간으로 일정한 공정가스를 공급할 수 있다. 따라서, 각각의 기판에 균일한 공정을 수행함으로써 기판의 생산성 및 품질을 확보할 수 있다.According to one embodiment of the present invention, the blocking plate provided in the boat and the blocking ring installed in the inner reaction tube are interposed between the substrate and the substrate accommodated in the vertical direction, respectively, it is possible to supply a constant process gas to each partitioned reaction space. have. Therefore, by performing a uniform process on each substrate, it is possible to ensure the productivity and quality of the substrate.
도 1 은 일반적인 기판 처리장치를 나타내는 도면이다.1 is a view showing a general substrate processing apparatus.
도 2는 본 발명의 일 실시예에 따른 기판 처리장치를 개략적으로 나타내는 도면이다.2 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention.
도 3 내지 도 5는 도 2에 도시한 기판 처리장치의 작동과정을 나타내는 도면이다.3 to 5 are diagrams illustrating an operation process of the substrate processing apparatus shown in FIG. 2.
도 6은 도 5에 도시한 기판 처리장치의 공정가스의 유동상태를 나타내는 도면이다.FIG. 6 is a view showing a flow state of a process gas of the substrate processing apparatus shown in FIG. 5.
이하, 본 발명의 바람직한 실시예들을 첨부된 도 1 내지 도 6을 참고하여 더욱 상세히 설명한다. 본 발명의 실시예들은 여러 가지 형태로 변형될 수 있으며, 본 발명의 범위가 아래에서 설명하는 실시예들에 한정되는 것으로 해석되어서는 안 된다. 본 실시예들은 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 본 발명을 더욱 상세하게 설명하기 위해서 제공되는 것이다. 따라서 도면에 나타난 각 요소의 형상은 보다 분명한 설명을 강조하기 위하여 과장될 수 있다.Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to FIGS. 1 to 6. Embodiments of the invention may be modified in various forms, the scope of the invention should not be construed as limited to the embodiments described below. These embodiments are provided to explain in detail the present invention to those skilled in the art. Accordingly, the shape of each element shown in the drawings may be exaggerated to emphasize a more clear description.
도 1 은 일반적인 기판 처리장치를 나타내는 도면이다. 도 1에 도시한 바와 같이, 기판 처리장치(100)는 상부가 개방된 형상을 가지는 챔버(10)를 포함하며, 챔버(10)의 일측에는 통로(8)가 형성되어 기판(S)은 통로(8)를 통해 챔버(10) 내부로 로딩될 수 있다. 게이트 밸브(도시안함)는 통로(8)의 외측에 설치될 수 있으며, 통로(8)는 게이트 밸브에 의해 개방 및 폐쇄될 수 있다. 기판 처리장치(100)는 복수의 기판(S)들이 적재되는 보트(20)를 구비하며, 통로(8)를 통해 이송된 기판(S)들은 보트(20) 상에 상하방향으로 순차적으로 적재된다.1 is a view showing a general substrate processing apparatus. As shown in FIG. 1, the substrate processing apparatus 100 includes a chamber 10 having an open top shape, and a passage 8 is formed at one side of the chamber 10, so that the substrate S is a passage. It may be loaded into the chamber 10 through (8). The gate valve (not shown) may be installed outside the passage 8, and the passage 8 may be opened and closed by the gate valve. The substrate processing apparatus 100 includes a boat 20 on which a plurality of substrates S are stacked, and the substrates S transferred through the passage 8 are sequentially loaded in the vertical direction on the boat 20. .
보트(20)의 하부에는 승강축(70)이 연결되며, 승강축(70)은 챔버(10)의 바닥면을 관통하여 승강모터(79)에 의해 승강 가능하다. 또한, 보트(20)가 회전가능하도록 승강축(70)은 회전모터(72)를 구비할 수 있으며, 회전모터(72)는 모터하우징(74) 상에 설치되어 공정이 진행되는 동안 회전모터(72)를 구동하여 승강축(70)을 회전함으로써 보트(20) 및 기판(W)들을 함께 회전할 수 있다. 이는 반응가스가 분사구(42)로부터 배기구(47)를 향해 흐르며, 기판(S)에 대한 증착이 분사구(42) 측에서 배기구(47) 측으로 진행됨에 따라 공정가스의 농도가 감소하는 경향이 있기 때문에 이를 방지하기 위함이다.The lifting shaft 70 is connected to the lower part of the boat 20, and the lifting shaft 70 can be lifted by the lifting motor 79 through the bottom surface of the chamber 10. In addition, the lifting shaft 70 may be provided with a rotary motor 72 so that the boat 20 is rotatable, the rotary motor 72 is installed on the motor housing 74 to rotate the motor during the process ( The boat 20 and the substrates W may be rotated together by driving 72 to rotate the lifting shaft 70. This is because the reaction gas flows from the injection port 42 toward the exhaust port 47, and as the deposition on the substrate S proceeds from the injection port 42 side to the exhaust port 47 side, the concentration of the process gas tends to decrease. This is to prevent this.
모터하우징(74)은 브래킷(75)에 고정되며, 브래킷(75)의 일측은 챔버(10)의 하부에 설치된 승강 로드(77)에 연결되어 승강 로드(77)를 따라 승강할 수 있다. 브래킷(75)은 승강 로드(77)에 나사체결되며, 승강 로드(77)는 승강 모터(79)에 의해 회전된다. 승강 모터(79)의 회전에 의해 승강 로드(77)는 회전하며, 이로 인해 브래킷(75)과 모터 하우징(74)은 함께 승강할 수 있다. 또한, 브래킷(75)의 타측은 승강 로드(77)와 나란하게 설치된 가이드 로드(78)에 연결되며, 브래킷(75)은 승강 로드(77) 및 가이드 로드(78)에 의해 용이하게 승강 가능하다.The motor housing 74 is fixed to the bracket 75, and one side of the bracket 75 may be connected to the lifting rod 77 installed at the lower portion of the chamber 10 to move up and down along the lifting rod 77. The bracket 75 is screwed to the lifting rod 77, and the lifting rod 77 is rotated by the lifting motor 79. The elevating rod 77 rotates by the rotation of the elevating motor 79, thereby allowing the bracket 75 and the motor housing 74 to elevate together. In addition, the other side of the bracket 75 is connected to the guide rod 78 installed in parallel with the lifting rod 77, the bracket 75 can be easily lifted by the lifting rod 77 and the guide rod 78. .
즉, 승강축(70)과 보트는 함께 승강 가능하며, 보트(20)는 승강 모터(79)에 의해 기판(W)들이 순차적으로 보트(20) 상에 적재되는 적재위치 및 보트(20)가 상승하여 기판(W)에 대한 공정을 진행하는 공정위치로 전환될 수 있다. 벨로우즈(60)는 챔버(10)와 모터 하우징(74)을 서로 연결하며, 이를 통해 챔버(10) 내부의 기밀을 유지할 수 있다.That is, the lifting shaft 70 and the boat can be lifted together, the boat 20 is a loading position and the boat 20 is loaded on the boat 20 by the substrate (W) sequentially by the lifting motor 79 As it rises, it may be switched to a process position where the process of the substrate W is performed. The bellows 60 connects the chamber 10 and the motor housing 74 to each other, thereby maintaining airtightness inside the chamber 10.
분사노즐(40)들의 분사구(42)들은 내부반응튜브(50)의 내벽을 따라 삽입설치되며, 서로 다른 높이에 배치된다. 따라서, 분사노즐(40)로부터 공급된 공정가스는 반대편에 위치하는 배기노즐(45)을 향해 흐르며, 이를 통해 공정가스와 기판(S)의 표면이 반응할 수 있는 충분한 시간을 확보할 수 있다. 이때 공정 중 발생한 미반응가스 및 반응부산물들은 배기노즐(45)을 통해 흡입되어 배출된다.The injection holes 42 of the injection nozzles 40 are inserted along the inner wall of the inner reaction tube 50 and are disposed at different heights. Therefore, the process gas supplied from the injection nozzle 40 flows toward the exhaust nozzle 45 located on the opposite side, thereby ensuring sufficient time for the process gas and the surface of the substrate S to react. At this time, the unreacted gas and the reaction by-products generated during the process are sucked out through the exhaust nozzle 45 and discharged.
반면, 공정위치로 전환된 보트(20) 상에 수용된 각각의 기판(S)들에 대응되는 분사노즐(40)을 통해 일정량의 공정가스를 공급할 경우, 기판(S)과 기판(S) 사이는 개방된 구조를 가짐으로 각각의 기판(S)상에 균일한 공정가스 공급하기 어려운 문제점이 있다. 따라서, 이하에서는 각각의 기판(S)에 일정한 공정가스를 공급가능한 기판 처리장치(100)에 대해 설명하기로 하며, 후술하는 기판 처리장치(100)의 생략된 구성요소 및 동작과정은 전술한 내용으로 대체될 수 있다.On the other hand, when supplying a predetermined amount of process gas through the injection nozzle 40 corresponding to each of the substrates (S) accommodated on the boat 20 converted to the process position, between the substrate (S) and the substrate (S) It has a problem that it is difficult to supply a uniform process gas on each substrate (S) having an open structure. Therefore, hereinafter, the substrate processing apparatus 100 capable of supplying a predetermined process gas to each substrate S will be described, and the omitted components and operation processes of the substrate processing apparatus 100 described later are described above. Can be replaced with
도 2는 본 발명의 일 실시예에 따른 기판 처리장치를 개략적으로 나타내는 도면이다. 도 2에 도시한 바와 같이, 통로(8)를 통해 이송된 기판(S)은 보트(20) 상에 순차적으로 적재된다. 보트(20)는 상하방향을 따라 형성된 복수의 지지슬롯(27)을 가지는 수직프레임(25) 및 수직프레임(25)의 상부와 하부에 각각 연결되는 상부프레임(22)과 하부프레임(29)을 구비할 수 있다. 상부프레임(22) 및 하부프레임(29)은 기판(S)의 형상과 대응되는 원형일 수 있다.2 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention. As shown in FIG. 2, the substrate S transferred through the passage 8 is sequentially loaded on the boat 20. The boat 20 includes a vertical frame 25 having a plurality of support slots 27 formed along the vertical direction, and an upper frame 22 and a lower frame 29 connected to upper and lower portions of the vertical frame 25, respectively. It can be provided. The upper frame 22 and the lower frame 29 may be circular corresponding to the shape of the substrate (S).
수직프레임(25)은 통로(8)를 통해 이송된 기판(S)을 용이하게 적재하기 위해 복수로 구비되며, 상하방향으로 형성된 지지슬롯(27)에 기판(S)을 순차적으로 적재할 수 있다. 각각의 수직프레임(25)에 형성된 지지슬롯(27)은 서로 나란하게 형성되며, 수평선상에 형성된 각각의 지지슬롯(27)의 사이 및 최상에 위치한 지지슬롯 상부 및 최하단에 위치한 지지슬롯의 하부에는 차단플레이트(30)들이 설치된다. 각각의 차단플레이트(30)는 서로 같은 중심을 가지며, 하부방향에 배치될수록 큰 외경을 가진다.The vertical frame 25 is provided in plurality in order to easily load the substrate S transferred through the passage 8, and may sequentially load the substrate S in the support slots 27 formed in the vertical direction. . The support slots 27 formed on each vertical frame 25 are formed in parallel with each other, and between the support slots 27 formed on the horizontal line and above the support slots located at the top and the bottom of the support slots located at the bottom thereof. Blocking plates 30 are installed. Each blocking plate 30 has the same center as each other, the larger the outer plate is disposed in the downward direction.
내부반응튜브(50)는 챔버(10)의 바닥면 상에 연결될 수 있다. 내부반응튜브(50)는 상부로 돌출된 형상을 가지며, 하부가 개방된 원통형일 수 있다. 내부반응튜브에 형성된 공급홀(51)은 통로(8)와 내부공간을 연통하며, 내부반응튜브에 형성된 배기홀(54)은 보조배기포트(53)와 내부공간을 연통한다. 내부반응튜브(50)의 내벽에는 내부를 향해 돌출된 형상의 복수의 지지팁(55)들이 구비되며, 지지팁(55)들은 공급홀(51)의 상부에 배치될 수 있다.The internal reaction tube 50 may be connected on the bottom surface of the chamber 10. The internal reaction tube 50 may have a shape protruding upward and may have a cylindrical shape with an open bottom. The supply hole 51 formed in the inner reaction tube communicates with the passage 8 and the inner space, and the exhaust hole 54 formed in the inner reaction tube communicates with the auxiliary exhaust port 53 and the inner space. The inner wall of the inner reaction tube 50 is provided with a plurality of support tips 55 protruding toward the inside, the support tips 55 may be disposed above the supply hole 51.
지지팁(55)들은 내부반응튜브(50)의 내벽의 일측 및 타측에 각각 상하방향을 따라 기설정된 간격으로 설치될 수 있으며, 일측 및 타측에 배치된 지지팁(55)은 서로 나란하게 배치된다. 각각 대향되는 지지팁(55)들의 상부에는 각각 차단링(35)이 놓여진다. 차단링(35)들은 서로 동일한 중심을 가지며, 상부에 배치될수록 작은 외경을 가진다. 즉, 상부로부터 k번째 차단플레이트(30)의 외경은 k번째 차단링(35)의 내경보다 크고, k+1번째 차단링(35)의 내경보다 작을 수 있다.(k = 1, 2, 3 ... n)The support tips 55 may be installed at one side and the other side of the inner wall of the inner reaction tube 50 at predetermined intervals along the up and down direction, respectively, and the support tips 55 disposed at one side and the other side are arranged side by side. . Blocking rings 35 are respectively placed on the upper portions of the support tips 55 facing each other. The blocking rings 35 have the same center as each other, and have a smaller outer diameter as they are disposed above. That is, the outer diameter of the k-th blocking plate 30 from the top may be larger than the inner diameter of the k-th blocking ring 35 and smaller than the inner diameter of the k + 1th blocking ring 35. (k = 1, 2, 3 ... n)
분사노즐(40)들의 분사구(42)들은 내부반응튜브(50)의 내벽에 각각 삽입설치되며, 내부반응튜브(50)의 상하방향을 따라 서로 다른 높이에 배치된다. 배기노즐(45)들의 배기구(47)들 또한, 분사구(42)의 반대측에 배치되어 내부반응튜브(50)의 내벽에 삽입설치되며, 내부반응튜브(50)의 상하방향을 따라 서로 다른 높이에 배치된다. 동일 높이의 분사구(42)와 배기구(47)는 서로 대칭되는 구조를 가지며, 보트(20)에 적재된 기판(S)을 중심으로 분사노즐(40)의 분사구(42)와 배기노즐(45)의 배기구(47)는 서로 반대편에 위치한다. 분사노즐(40)의 분사구(42) 및 배기노즐(45)의 배기구(47)는 각각의 지지팁(55) 사이에 배치된다.The injection holes 42 of the injection nozzles 40 are respectively inserted into the inner wall of the inner reaction tube 50 and are disposed at different heights along the vertical direction of the inner reaction tube 50. Exhaust ports 47 of the exhaust nozzles 45 are also disposed on the opposite side of the injection port 42 and inserted into the inner wall of the inner reaction tube 50, and are disposed at different heights along the vertical direction of the inner reaction tube 50. Is placed. The injection port 42 and the exhaust port 47 of the same height have a symmetrical structure, and the injection port 42 and the exhaust nozzle 45 of the injection nozzle 40 centering on the substrate S loaded on the boat 20. Vents 47 are located opposite each other. An injection port 42 of the injection nozzle 40 and an exhaust port 47 of the exhaust nozzle 45 are disposed between the respective support tips 55.
챔버(10)의 상부에는 베이스 플렌지(6)가 설치될 수 있다. 베이스 플렌지(6) 일측에는 공급포트(43)가 형성되며, 공급포트(43)는 분사노즐(40)과 연결되어 분사노즐(40)에 공정가스를 공급할 수 있다. 또한, 베이스 플렌지(6) 타측에는 배기포트(49)가 형성되며, 배기포트(49)는 배기노즐(45)과 연결되어 배기노즐(45)을 통해 흡입된 미반응가스 및 반응부산물을 외부로 배기할 수 있다. 베이스 플렌지(6)의 상부에는 외부반응튜브(58)가 설치될 수 있으며, 외부반응튜브(58)는 분사노즐(40) 및 배기노즐(45)의 외측에 배치되어 챔버(10)의 개방된 상부를 폐쇄 가능하다. 또한, 외부반응튜브(58)의 외측에는 챔버덮개(5)가 설치될 수 있으며, 챔버덮개(5)는 기판(S)을 가열하는 히터(도시안함)를 구비할 수 있다.The base flange 6 may be installed above the chamber 10. A supply port 43 is formed at one side of the base flange 6, and the supply port 43 is connected to the injection nozzle 40 to supply process gas to the injection nozzle 40. In addition, an exhaust port 49 is formed at the other side of the base flange 6, and the exhaust port 49 is connected to the exhaust nozzle 45 so that the unreacted gas and the reaction by-products sucked through the exhaust nozzle 45 to the outside. Can be exhausted. An external reaction tube 58 may be installed on the upper portion of the base flange 6, and the external reaction tube 58 may be disposed outside the injection nozzle 40 and the exhaust nozzle 45 to open the chamber 10. The upper part can be closed. In addition, the chamber cover 5 may be installed outside the external reaction tube 58, and the chamber cover 5 may include a heater (not shown) for heating the substrate S.
챔버(10) 바닥면 일측에는 보조가스공급포트(44)가 형성되며, 보조가스공급포트(44)는 보조가스공급라인(도시안함)과 연결되어 보조가스공급라인을 통해 공급된 가스를 챔버(10) 내에 공급할 수 있다. 예를 들어, 비활성가스가 보조가스공급포트(44)를 통해 챔버(10) 내에 공급될 수 있으며, 비활성가스를 공급함으로써 공정가스가 공정위치로 전환된 보트(20)의 하부로 유동하는 것을 방지할 수 있다.An auxiliary gas supply port 44 is formed at one side of the bottom of the chamber 10, and the auxiliary gas supply port 44 is connected to an auxiliary gas supply line (not shown) to supply gas supplied through the auxiliary gas supply line to the chamber ( 10) can be supplied. For example, an inert gas may be supplied into the chamber 10 through the auxiliary gas supply port 44, and supplying the inert gas prevents the process gas from flowing to the bottom of the boat 20 converted to the process position. can do.
도 3 내지 도 5는 도 2에 도시한 기판 처리장치의 작동과정을 나타내는 도면이다. 도 3은 보트의 적재위치를 나타내는 도면이며, 도 4 및 도 5는 보트가 적재위치에서 공정위치로 전환되는 상태를 나타내는 도면이다. 도 3에 도시한 바와 같이, 통로(8)를 통해 이송된 기판(S)들이 보트(20)의 지지슬롯(27) 상에 각각 적재된다. 앞서 설명한 바와 같이, 보트(20)의 승강모터(79)에 의해 기설정된 간격으로 상승하며, 통로(8)를 통해 이송된 기판(S)은 최상부에 형성된 지지슬롯(27)부터 하방향을 향해 순차적으로 적재될 수 있다.3 to 5 are diagrams illustrating an operation process of the substrate processing apparatus shown in FIG. 2. 3 is a view showing the loading position of the boat, Figures 4 and 5 are views showing a state in which the boat is switched from the loading position to the process position. As shown in FIG. 3, the substrates S transferred through the passage 8 are loaded on the support slots 27 of the boat 20, respectively. As described above, the substrate S, which is raised at a predetermined interval by the lifting motor 79 of the boat 20, and transferred through the passage 8, moves downward from the support slot 27 formed at the top thereof. Can be loaded sequentially.
도 4에 도시한 바와 같이, 기판(S) 적재가 완료된 보트(20)는 분사노즐(40)을 향해 상승한다. 보트(20)의 수직프레임(25) 상에는 복수의 지지슬롯(27)들이 형성되며, 지지슬롯(27)의 상부에는 각각 차단플레이트(30)가 설치된다. 각각의 차단플레이트(30)의 중심은 서로 일치하며, 차단플레이트(30)는 하방향에 배치될수록 큰 외경을 가진다.As shown in FIG. 4, the boat 20 on which the substrate S is loaded is raised toward the jet nozzle 40. A plurality of support slots 27 are formed on the vertical frame 25 of the boat 20, and the blocking plates 30 are respectively provided on the support slots 27. The centers of the blocking plates 30 coincide with each other, and the blocking plates 30 have a larger outer diameter as they are disposed in the downward direction.
또한, 내부반응튜브(50)는 기판(S)에 대한 공정이 이루어지는 내부공간(2)을 제공하며, 내부반응튜브(50)의 내측벽에 설치된 지지팁(55)들은 분사노즐(40)의 분사구(42)와 배기노즐(45)의 배기구(47) 상부 및 하부에 각각 배치된다. 차단링(35)은 지지팁(55)의 상부에 각각 놓이며, 각각의 차단링(35)들의 중심은 서로 일치한 상태에서 하방향에 배치될수록 큰 내경을 가진다.In addition, the internal reaction tube 50 provides an internal space 2 in which a process for the substrate S is made, and the support tips 55 installed on the inner wall of the internal reaction tube 50 are formed of the injection nozzle 40. The injection holes 42 and the exhaust nozzles 45 are disposed above and below the exhaust ports 47, respectively. The blocking ring 35 is placed on the upper portion of the support tip 55, and the center of each of the blocking rings 35 has a larger inner diameter as it is disposed in the downward direction in agreement with each other.
즉, 도 5에 도시한 바와 같이, 보트(20)가 상승함에 따라 차단플레이트(30)는 지지팁(55)의 상부에 놓여진 차단링(35)과 맞닿아 함께 상승한다. 따라서, 각각의 차단플레이트(30)는 각각의 차단링(35)과 맞닿아 기설정된 높이로 함께 상승하여 내부공간(2)을 복수의 반응공간(4)으로 구획한다. 따라서, 각각의 반응공간(4)은 서로의 간섭이 최소화됨에 따라 동일한 공정가스를 공급가능하다.That is, as shown in FIG. 5, as the boat 20 rises, the blocking plate 30 abuts with the blocking ring 35 placed on the support tip 55. Accordingly, each blocking plate 30 is raised to a predetermined height in contact with each blocking ring 35 to partition the internal space (2) into a plurality of reaction space (4). Therefore, each reaction space 4 can supply the same process gas as the interference of each other is minimized.
도 6은 도 5에 도시한 기판 처리장치의 공정가스의 유동상태를 나타내는 도면이다. 앞서 설명한 바와 같이, 보트(20)가 상승함에 따라 각각의 차단링(35)은 각각의 차단플레이트(30) 상부에 맞닿아 상승하여 지지팁(55)으로부터 이격되고, 내부공간(2)을 각각의 기판(S)에 대한 공정이 이루어지는 반응공간(4)으로 구획하는 공정위치로 전환된다. 도 6에 도시한 바와 같이, 각각의 차단플레이트(30)와 차단링(35)을 통해 각각의 반응공간(4) 상에 공정가스를 공급함으로써 각각의 기판(S)에 균일한 공정을 수행하여 기판(S)의 생산성 및 품질을 확보할 수 있다.FIG. 6 is a view showing a flow state of a process gas of the substrate processing apparatus shown in FIG. 5. As described above, as the boat 20 rises, each blocking ring 35 abuts on an upper portion of each blocking plate 30 to be spaced apart from the support tip 55, and each of the inner space 2 is separated. It is switched to the process position partitioned by the reaction space 4 in which the process for the substrate S is performed. As shown in FIG. 6, a uniform process is performed on each substrate S by supplying a process gas to each reaction space 4 through each blocking plate 30 and a blocking ring 35. Productivity and quality of the substrate S can be secured.
본 발명을 바람직한 실시예들을 통하여 상세하게 설명하였으나, 이와 다른 형태의 실시예들도 가능하다. 그러므로, 이하에 기재된 청구항들의 기술적 사상과 범위는 바람직한 실시예들에 한정되지 않는다.Although the present invention has been described in detail with reference to preferred embodiments, other forms of embodiments are possible. Therefore, the spirit and scope of the claims set forth below are not limited to the preferred embodiments.
본 발명은 다양한 형태의 반도체 제조설비 및 제조방법에 응용될 수 있다.The present invention can be applied to various types of semiconductor manufacturing equipment and manufacturing methods.

Claims (9)

  1. 일측에 형성된 통로를 통해 기판이 이송되며, 상부가 개방된 형상의 챔버;The substrate is transferred through the passage formed on one side, the chamber of the upper shape is open;
    상기 챔버에 연결되어 상기 기판에 대한 공정이 이루어지는 내부공간을 제공하며, 내측면을 따라 돌출되는 복수의 지지팁들을 가지는 내부반응튜브;An inner reaction tube connected to the chamber to provide an inner space in which a process for the substrate is made, and having a plurality of support tips protruding along an inner surface;
    상하방향을 따라 복수의 지지슬롯들이 형성되는 수직프레임을 가지며, 상기 내부공간 내에서 승강가능한 보트;A boat having a vertical frame in which a plurality of support slots are formed along a vertical direction, the boat capable of lifting in the inner space;
    상기 수직프레임상에 이격설치되며, 상기 지지슬롯들의 사이 및 최상단의 상기 지지슬롯의 상부, 그리고 최하단의 상기 지지슬롯의 하부에 배치되는 차단플레이트들;Blocking plates disposed on the vertical frame and disposed between the support slots and disposed above the support slots at the uppermost end and below the support slots at the lower end;
    상기 지지팁의 상부에 각각 놓여져 상기 지지팁으로부터 상기 내부반응튜브의 내측을 향해 돌출되는 차단링들;Blocking rings which are respectively placed on an upper portion of the support tip and protrude toward the inside of the inner reaction tube from the support tip;
    상기 내부반응튜브의 일측에 삽입설치되어 상기 내부반응튜브의 상하방향을 따라 배치되며, 상기 지지팁들의 사이에 위치하여 상기 기판을 향해 공정가스를 공급하는 분사노즐; 및An injection nozzle inserted into one side of the inner reaction tube and disposed along a vertical direction of the inner reaction tube and positioned between the support tips to supply a process gas toward the substrate; And
    상기 내부반응튜브의 타측에 삽입설치되어 상기 내부반응튜브의 상하방향을 따라 배치되며, 상기 지지팁들의 사이에 위치하여 상기 공정가스를 배기하는 배기노즐을 포함하는, 기판 처리장치.And an exhaust nozzle inserted into the other side of the inner reaction tube and disposed along the vertical direction of the inner reaction tube and disposed between the support tips to exhaust the process gas.
  2. 제1항에 있어서,The method of claim 1,
    상기 차단플레이트는 하방향에 배치될수록 큰 외경을 가지며,The blocking plate has a larger outer diameter as it is disposed in the downward direction,
    상기 차단링은 하방향에 배치될수록 큰 내경을 가지는, 기판 처리장치.The blocking ring has a larger inner diameter as disposed in the downward direction, substrate processing apparatus.
  3. 제2항에 있어서,The method of claim 2,
    상기 차단플레이트 및 상기 차단링의 중심은 각각 서로 동일한, 기판 처리장치.And the centers of the blocking plate and the blocking ring are the same as each other.
  4. 제1항에 있어서,The method of claim 1,
    상기 보트는 상기 통로를 통해 이송된 상기 기판을 각각의 상기 지지슬롯에 순차적으로 적재하는 적재위치; 및The boat includes a loading position for sequentially loading the substrate transferred through the passage into each of the support slots; And
    상기 기판이 상기 지지팁들 사이에 위치하며, 각각의 상기 차단링이 각각의 상기 차단플레이트와 맞닿아 상기 지지팁으로부터 이격되고 상기 내부공간을 복수의 반응공간으로 구획하는 공정위치로 전환 가능한, 기판 처리장치.The substrate is located between the support tips, each of the blocking ring is in contact with each of the blocking plate is separated from the support tip and switchable to the process position to partition the internal space into a plurality of reaction space, the substrate Processing unit.
  5. 제1항에 있어서,The method of claim 1,
    상부로부터 k번째 차단플레이트의 외경은 k번째 차단링의 내경보다 크고, k+1번째 차단링의 내경보다 작은, 기판 처리장치.(k = 1, 2, 3 ... n)The outer diameter of the k-th blocking plate from the top is larger than the inner diameter of the k-th blocking ring and smaller than the inner diameter of the k + 1th blocking ring. (K = 1, 2, 3 ... n)
  6. 제1항에 있어서,The method of claim 1,
    상기 기판 처리장치는,The substrate processing apparatus,
    상기 통로의 상부에 형성되며, 상기 분사노즐에 상기 공정가스를 공급하는 공급포트; 및A supply port formed at an upper portion of the passage and supplying the process gas to the injection nozzle; And
    상기 통로의 타측에 형성되며, 상기 배기노즐을 통해 흡입된 상기 공정가스를 외부로 배기하는 배기포트를 더 포함하는, 기판 처리장치.And an exhaust port formed at the other side of the passage and exhausting the process gas sucked through the exhaust nozzle to the outside.
  7. 제1항에 있어서,The method of claim 1,
    상기 기판 처리장치는 상기 챔버의 타측에 형성되는 보조배기포트를 더 포함하되,The substrate processing apparatus further includes an auxiliary exhaust port formed on the other side of the chamber,
    상기 내부반응튜브의 하단은 상기 챔버의 바닥면에 연결되며, 상기 통로 및 상기 보조배기포트와 각각 연통되는 공급홀 및 배기홀을 가지는, 기판 처리장치.A lower end of the internal reaction tube is connected to the bottom surface of the chamber, and has a supply hole and an exhaust hole communicating with the passage and the auxiliary exhaust port, respectively, substrate processing apparatus.
  8. 제7항에 있어서,The method of claim 7, wherein
    상기 지지팁은 상기 공급홀의 상부에 배치되는, 기판 처리장치.The support tip is disposed above the supply hole, substrate processing apparatus.
  9. 제1항에 있어서,The method of claim 1,
    상기 기판 처리장치는,The substrate processing apparatus,
    상기 내부반응튜브의 외측에 배치되며, 상기 챔버의 개방된 상부를 폐쇄하는 외부반응튜브를 더 포함하되,It is disposed outside the inner reaction tube, and further comprising an outer reaction tube for closing the open top of the chamber,
    상기 분사노즐 및 상기 배기노즐은 상기 외부반응튜브의 내측에 배치되어 상기 분사노즐의 분사구 및 상기 배기노즐의 배기구가 상기 내부반응튜브의 내부에 위치하는, 기판 처리장치.And the injection nozzle and the exhaust nozzle are disposed inside the external reaction tube such that the injection port of the injection nozzle and the exhaust port of the exhaust nozzle are located inside the internal reaction tube.
PCT/KR2014/005880 2013-07-10 2014-07-02 Substrate processing apparatus WO2015005607A1 (en)

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