WO2017193417A1 - 显示面板及其制作方法 - Google Patents

显示面板及其制作方法 Download PDF

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Publication number
WO2017193417A1
WO2017193417A1 PCT/CN2016/083059 CN2016083059W WO2017193417A1 WO 2017193417 A1 WO2017193417 A1 WO 2017193417A1 CN 2016083059 W CN2016083059 W CN 2016083059W WO 2017193417 A1 WO2017193417 A1 WO 2017193417A1
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WIPO (PCT)
Prior art keywords
wire grid
display panel
black matrix
polarizer
units
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PCT/CN2016/083059
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English (en)
French (fr)
Inventor
陈黎暄
李泳锐
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深圳市华星光电技术有限公司
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Priority to US15/112,189 priority Critical patent/US20180292707A1/en
Publication of WO2017193417A1 publication Critical patent/WO2017193417A1/zh

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528Polarisers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133512Light shielding layers, e.g. black matrix
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • G02B5/3025Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528Polarisers
    • G02F1/133548Wire-grid polarisers

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a display panel and a method of fabricating the same.
  • Nano-imprint Lithography (NIL) technology breaks through the problem of traditional lithography in the process of feature size reduction, featuring high resolution, low cost and high yield. Since its introduction in 1995, nanoimprint has evolved a variety of imprinting technologies, widely used in semiconductor manufacturing, Microelectromechanical Systems (MEMS), biochips, biomedical and other fields.
  • MEMS Microelectromechanical Systems
  • the basic idea of NIL technology is to transfer the pattern to the corresponding substrate through a template.
  • the transferred medium is usually a thin layer of polymer film, which is hardened by hot pressing or irradiation to preserve the transfer.
  • Graphics The entire process includes two processes: embossing and graphics transfer.
  • NIL can be mainly divided into three kinds of lithography technologies: hot embossing, ultraviolet (UV) curing and micro contact printing (uCP).
  • polarizers are a combination of multilayer films.
  • the most central part is the polarizing layer, usually a poly-electron molecule containing polarizing action.
  • a vinyl alcohol (PVA) layer followed by a protective layer on each side of the polarizing layer, usually a transparent cellulose triacetate (TAC) layer, mainly for maintaining the stretched state of the polarizer in the polarizing layer, avoiding polarizers
  • PVA vinyl alcohol
  • TAC transparent cellulose triacetate
  • the loss of moisture protects it from external influences, and the polarizer generates polarized light by the absorption of dihydration iodine molecules.
  • An object of the present invention is to provide a display panel in which a large-sized wire grid polarizer is formed by splicing a plurality of wire grid units, and a black matrix is used to block the fight between the wire grid elements on the wire grid polarizer. Connect the gap to reduce the impact of poor splicing.
  • Another object of the present invention is to provide a method for fabricating a display panel, which is formed by splicing a plurality of wire grid cells to form a large-sized wire grid polarizer, and occluding a splicing gap between a plurality of wire grid cells on the wire grid polarizer by using a black matrix. , to reduce the impact of poor splicing.
  • the present invention firstly provides a display panel including an upper substrate and a lower substrate, a wire grid polarizer, and a black matrix disposed opposite to each other, and the black matrix is disposed on one side of the upper substrate or the lower substrate.
  • the wire grid polarizer is disposed on one side of the upper substrate or the lower substrate; the wire grid polarizer has a plurality of wire grid cells spliced in a matrix array manner, and an orthographic projection of the splicing seam between the wire grid cells Located in the black matrix.
  • the wire grid unit is formed by a 6-8 inch imprint template unit.
  • a plurality of wire grid cells on the wire grid polarizer are sequentially formed by one imprint template unit.
  • a plurality of wire grid units on the wire grid polarizer are simultaneously formed by a splicing embossing template formed by splicing a plurality of embossing template units.
  • the black matrix includes a plurality of light-shielding strips criss-crossed, and the orthographic projection of the stitching seam between the wire grid units is located in the light-shielding strip of the black matrix, and the width of the light-shielding strip is 20 ⁇ m or more.
  • the invention also provides a method for manufacturing a display panel, comprising the following steps:
  • Step 1 providing a panel to be processed, comprising a polarizer to be embossed, an oppositely disposed upper substrate and a lower substrate, and a black matrix, wherein the black matrix is disposed on one side of the upper substrate or the lower substrate;
  • Step 2 providing an imprint template unit, forming a plurality of wire grid cells spliced in a matrix array on the polarizer to be imprinted by using the imprint template unit, to obtain a wire grid polarizer, wherein each wire grid unit is corresponding to one Forming an imprint template unit;
  • Step 3 Obtain a display panel, the wire grid polarizer is disposed on one side of the upper substrate or the lower substrate, and the orthographic projection of the joint between the wire grid units is located in the black matrix.
  • an imprint template unit is provided, and by moving the imprint template unit, a plurality of wire grid units are sequentially formed on the polarizer to be imprinted.
  • a plurality of wire grid units on the corresponding wire grid polarizer are provided with a plurality of imprint template units, and are spliced into a splicing embossing template, and the splicing embossing template is used to pass through the polarizer to be embossed once. Embossing forms a plurality of wire grid cells.
  • the imprint template unit provided in the step 2 is a 6-8 inch imprint template unit.
  • the black matrix includes a plurality of light-shielding strips criss-crossed, and the orthographic projection of the stitching seam between the wire grid units is located in the light-shielding strip of the black matrix, and the width of the light-shielding strip is 20 ⁇ m or more.
  • the present invention also provides a display panel comprising oppositely disposed upper and lower substrates, a wire grid polarizer, and a black matrix, the black matrix being disposed on one side of the upper substrate or the lower substrate, the wire grid polarizer Provided on one side of the upper or lower substrate;
  • the wire grid polarizer has a plurality of wire grid cells spliced in a matrix array manner, and an orthographic projection of the stitching seam between the wire grid cells is located in a black matrix;
  • wire grid unit is formed by a 6-8 inch imprint template unit
  • the black matrix includes a plurality of light-shielding strips criss-crossed, and the width of the light-shielding strip is 20 ⁇ m or more.
  • the display panel of the present invention includes oppositely disposed upper and lower substrates, a wire grid polarizer, and a black matrix;
  • the wire grid polarizer has a plurality of wire grid units spliced in a matrix array manner. The orthographic projection of the splicing seam between the wire grid units is located in the black matrix, and the splicing seam between the wire grid units on the wire grid polarizer is blocked by the black matrix, so that the large-size display panel can be reduced to a large extent due to splicing.
  • the wire grid is formed by arranging a plurality of wire grid units in a matrix array manner, and the black matrix is used to block the stitching seam between the plurality of wire grid units on the wire grid polarizer, thereby greatly reducing the large size display panel.
  • FIG. 1 is a schematic structural view of a display panel of the present invention
  • FIG. 2 is a schematic flow chart of a method of fabricating a display panel of the present invention
  • step 2 is a schematic view of step 2 of the method of fabricating the display panel of the present invention.
  • a display panel of the present invention includes an upper substrate 20 and a lower substrate 40, a wire grid polarizer 10, and a black matrix 50 disposed opposite to each other; the wire grid polarizer 10 has a plurality of lines spliced in a matrix array manner.
  • the gate unit 11 and the orthographic projection of the splicing seam between the wire grid units 11 are located in the black matrix 50.
  • the upper substrate 20 is a color filter substrate
  • the lower substrate 40 is a TFT array substrate
  • the black matrix 50 is disposed on a side of the upper substrate 20 adjacent to the lower substrate 40
  • the sheet 10 is of an external type and is disposed on a side of the upper substrate 20 away from the lower substrate 40.
  • the wire grid unit 11 is formed by a corresponding imprint template unit, and therefore, the imprint template unit does not have to be made into a large size, and even the current 6-8 inch template can be used.
  • the plurality of wire grid units 11 on the wire grid polarizer 10 are sequentially formed by one imprint template unit 71, or the plurality of wire grid units 11 on the wire grid polarizer 10 are composed of a plurality of imprint templates.
  • a splicing embossing template in which the units 71 are spliced is simultaneously formed.
  • the black matrix 50 includes a plurality of light-shielding strips criss-crossed, and the orthographic projection of the stitching seam between the wire grid units 11 is located in the light-shielding strip of the black matrix 50, and the width of the light-shielding strip is 20 ⁇ m or more. Therefore, it is sufficient to block the seam between the wire grid units 11 on the wire grid polarizer 10.
  • the display panel of the present invention adopts a BOA (Black Matrix On Arry) technology, and the black matrix 50 is disposed on the lower substrate 40 of the TFT array substrate, and the wire grid polarizer 10 is built-in. It is disposed on the side of the lower substrate 40 adjacent to the upper substrate 20, and the other embodiments are the same as the foregoing embodiments of the present invention, and details are not described herein again.
  • BOA Black Matrix On Arry
  • the black matrix 50 to block the splicing seam between the wire grid units 11 on the wire grid polarizer 10
  • the splicing failure and splicing of the polarizing plate of the large-sized display panel due to the splicing structure can be greatly reduced.
  • the influence of the slits further enables the use of a large-sized wire grid polarizer having a spliced structure by nanoimprinting in a display panel, and the manufacturing method is simple.
  • the present invention further provides a method for manufacturing a display panel, comprising the following steps:
  • Step 1 Provide a panel to be processed, including the polarizer 100 to be embossed, the upper and lower substrates 20 and 40, and the black matrix 50.
  • the black matrix 50 includes a plurality of light-shielding strips criss-crossed, and the width of the light-shielding strip is 20 ⁇ m or more.
  • the black matrix 50 is disposed on one side of the upper substrate 20 or the lower substrate 40; preferably, the black matrix 50 is disposed on a side of the upper substrate 20 close to the lower substrate 40 or near the lower substrate 40. On one side of the upper substrate 20.
  • Step 2 providing an imprint template unit 71, forming a plurality of wire grid units 11 spliced in a matrix array on the polarizer 100 to be imprinted by using the imprint template unit 71, to obtain a wire grid polarizer 10, wherein each line The gate unit 11 is formed by a corresponding one of the imprint template units.
  • an imprint template unit 71 is provided, and by moving the imprint template unit, a plurality of wire grid units 11 are sequentially formed on the polarizer to be imprinted.
  • a plurality of wire grid units 11 on the corresponding wire grid polarizer 10 in the step 2 are provided with a plurality of imprint template units 71, and are spliced into a splicing embossing template, and the splicing is utilized.
  • the embossing template forms a plurality of wire grid units 11 by one embossing on the polarizer to be embossed.
  • the imprint template unit 71 provided in the step 2 is a 6-8 inch imprint template unit.
  • Step 3 A display panel is obtained.
  • the wire grid polarizer 10 is disposed on one side of the upper substrate 20 or the lower substrate 40, and the orthographic projection of the splicing seam between the wire grid units 11 is located in the black matrix 50.
  • the wire grid polarizer 10 is disposed on a side of the upper substrate 20 away from the lower substrate 40 or a side of the lower substrate 40 away from the upper substrate 20.
  • the display panel of the present invention includes oppositely disposed upper and lower substrates, a wire grid polarizer, and a black matrix;
  • the wire grid polarizer has a plurality of wire grid units spliced in a matrix array manner, The orthographic projection of the splicing seam between the wire grid units is located in the black matrix, and the splicing seam between the wire grid elements on the wire grid polarizer is blocked by the black matrix, so that the splicing structure of the large-size display panel can be greatly reduced.
  • the wire grid is formed by arranging a plurality of wire grid units in a matrix array manner, and the black matrix is used to block the stitching seam between the plurality of wire grid units on the wire grid polarizer, thereby greatly reducing the large size display panel due to splicing. Poor splicing of the structure of the polarizer and the influence of the splicing gap.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Polarising Elements (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示面板及其制作方法,显示面板包括相对设置的上基板(20)与下基板(40)、线栅偏光片(10)、及黑色矩阵(50);所述线栅偏光片(10)具有呈矩阵阵列方式拼接的数个线栅单元(11),所述线栅单元(11)之间的拼接缝的正投影位于黑色矩阵(50)内,通过利用黑色矩阵(50)遮挡线栅偏光片(10)上线栅单元(11)之间的拼接缝,从而可以较大程度地降低大尺寸显示面板因拼接结构的偏光片(10)的拼接不良及拼接缝隙所带来的影响。

Description

显示面板及其制作方法 技术领域
本发明涉及显示技术领域,尤其涉及一种显示面板及其制作方法。
背景技术
纳米压印(Nano-imprint Lithography,NIL)技术突破了传统光刻在特征尺寸减小过程中的难题,具有分辨率高、低成本、高产率的特点。自1995年提出以来,纳米压印已经演变出了多种压印技术,广泛应用于半导体制造、微机电系统(Microelectromechanical Systems,MEMS)、生物芯片、生物医学等领域。NIL技术的基本思想是通过模版,将图形转移到相应的衬底上,转移的媒介通常是一层很薄的聚合物膜,通过热压或者辐照等方法使其结构硬化从而保留下转移的图形。整个过程包括压印和图形转移两个过程。根据压印方法的不同,NIL主要可分为热塑(Hot embossing)、紫外(UV)固化和微接触(Micro contact printing,uCP)三种光刻技术。
对于需要使用偏光片的各类器件,例如LCD、OLED等,传统的偏光片是由多层膜组合而成的,其中最核心的部分是偏光层,通常为含有具有偏光作用的碘分子的聚乙烯醇(PVA)层,其次是分别位于偏光层两侧的保护层,通常为透明的三醋酸纤维素(TAC)层,主要是为了维持偏光层中偏光子的被拉伸状态,避免偏光子水分的流失,保护其不受外界影响,该偏光片通过二向碘分子的吸收作用来产生偏振光。
随着纳米压印技术的发展,人们已经可以通过制备金属光栅结构,来达到对可见光波长范围的光的偏振作用,由于金属光栅结构本身对光的吸收很小,通过反射自然光的一个偏振而让另外一个偏振通过,可以使被反射的光通过偏振旋转再次被回收利用,因此在液晶显示中具有很大的潜力。但是目前NIL技术受到模板尺寸的限制,大多无法与电视的显示面板的尺寸相匹配,为了制作21寸以上或更大的纳米压印型偏光片,需要制作巨大的模板或者采用小模板拼接的方式进行压印,前者耗费巨大且存在工艺的复杂和困难性,后者的拼接可能带来拼接不良和存在拼接缝隙的状况。
发明内容
本发明的目的在于提供一种显示面板,通过多个线栅单元拼接形成大尺寸的线栅偏光片,并利用黑色矩阵遮挡线栅偏光片上线栅单元之间的拼 接缝隙,降低拼接不良带来的影响。
本发明的目的还在于提供一种显示面板的制作方法,通过多个线栅单元拼接形成大尺寸的线栅偏光片,并利用黑色矩阵遮挡线栅偏光片上数个线栅单元之间的拼接缝隙,降低拼接不良带来的影响。
为实现上述目的,本发明首先提供一种显示面板,包括相对设置的上基板与下基板、线栅偏光片、及黑色矩阵,所述黑色矩阵设置在上基板或下基板的一侧上,所述线栅偏光片设置在上基板或下基板的一侧上;所述线栅偏光片具有呈矩阵阵列方式拼接的数个线栅单元,所述线栅单元之间的拼接缝的正投影位于黑色矩阵内。
所述线栅单元由6-8寸的压印模板单元所形成。
所述线栅偏光片上的数个线栅单元由一个压印模板单元依次形成。
所述线栅偏光片上的数个线栅单元由数个压印模板单元拼接而成的拼接压印模板所同时形成。
所述黑色矩阵包括纵横交错的数个遮光条,所述线栅单元之间的拼接缝的正投影位于黑色矩阵的遮光条内,所述遮光条的宽度为20μm以上。
本发明还提供一种显示面板的制作方法,包括如下步骤:
步骤1、提供一待处理的面板,包括待压印的偏光片、相对设置的上基板与下基板、及黑色矩阵,所述黑色矩阵设置在上基板或下基板的一侧上;
步骤2、提供压印模板单元,利用压印模板单元在待压印的偏光片上形成呈矩阵阵列方式拼接的数个线栅单元,得到线栅偏光片,其中,每一线栅单元由对应的一个压印模板单元所形成;
步骤3、得到显示面板,所述线栅偏光片设置在上基板或下基板的一侧上,所述线栅单元之间的拼接缝的正投影位于黑色矩阵内。
所述步骤2中提供一个压印模板单元,通过移动该压印模板单元,在待压印的偏光片上依次压印形成数个线栅单元。
所述步骤2中对应线栅偏光片上的数个线栅单元提供数个压印模板单元,并将其拼接成一个拼接压印模板,利用该拼接压印模板在待压印的偏光片上通过一次压印形成数个线栅单元。
所述步骤2提供的压印模板单元为6-8寸的压印模板单元。
所述黑色矩阵包括纵横交错的数个遮光条,所述线栅单元之间的拼接缝的正投影位于黑色矩阵的遮光条内,所述遮光条的宽度为20μm以上。
本发明还提供一种显示面板,包括相对设置的上基板与下基板、线栅偏光片、及黑色矩阵,所述黑色矩阵设置在上基板或下基板的一侧上,所述线栅偏光片设置在上基板或下基板的一侧上;
所述线栅偏光片具有呈矩阵阵列方式拼接的数个线栅单元,所述线栅单元之间的拼接缝的正投影位于黑色矩阵内;
其中,所述线栅单元由6-8寸的压印模板单元所形成;
其中,所述黑色矩阵包括纵横交错的数个遮光条,所述遮光条的宽度为20μm以上。
本发明的有益效果:本发明的显示面板,包括相对设置的上、下基板、线栅偏光片、及黑色矩阵;所述线栅偏光片具有呈矩阵阵列方式拼接的数个线栅单元,所述线栅单元之间的拼接缝的正投影位于黑色矩阵内,通过利用黑色矩阵遮挡线栅偏光片上线栅单元之间的拼接缝,从而可以较大程度地降低大尺寸显示面板因拼接结构的偏光片的拼接不良及拼接缝隙所带来的影响;本发明的显示面板的制作方法,利用纳米压印模板制作大尺寸的具有拼接结构的线栅偏光片,即所述线栅偏光片上的线栅由数个线栅单元呈矩阵阵列方式拼接而成,并利用黑色矩阵遮挡线栅偏光片上数个线栅单元之间的拼接缝,从而可以较大程度地降低大尺寸显示面板因拼接结构的偏光片的拼接不良及拼接缝隙所带来的影响。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其他有益效果显而易见。
附图中,
图1为本发明的显示面板的结构示意图;
图2为本发明的显示面板的制作方法的示意流程图;
图3为本发明的显示面板的制作方法的步骤2的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1,本发明的显示面板包括相对设置的上基板20与下基板40、线栅偏光片10、及黑色矩阵50;所述线栅偏光片10具有呈矩阵阵列方式拼接的数个线栅单元11,所述线栅单元11之间的拼接缝的正投影位于黑色矩阵50内。
在本实施例中,所述上基板20为彩膜基板,所述下基板40为TFT阵列基板,所述黑色矩阵50设置在上基板20靠近下基板40的一侧上;所述线栅偏光片10为外置式,设置在上基板20远离下基板40的一侧上。
具体地,所述线栅单元11由对应的压印模板单元形成,因此,压印模板单元不必制作成巨大尺寸,甚至可以利用现行的6-8寸的模板即可。
具体地,所述线栅偏光片10上的数个线栅单元11由一个压印模板单元71依次形成,或者所述线栅偏光片10上的数个线栅单元11由数个压印模板单元71拼接而成的拼接压印模板所同时形成。
具体地,所述黑色矩阵50包括纵横交错的数个遮光条,所述线栅单元11之间的拼接缝的正投影位于黑色矩阵50的遮光条内,所述遮光条的宽度为20μm以上,从而足以遮挡线栅偏光片10上线栅单元11之间的拼接缝。
作为一种选择性实施例,本发明的显示面板采用BOA(Black matrix On Arry)技术,所述黑色矩阵50设置在TFT阵列基板的下基板40上,所述线栅偏光片10为内置式,设置在下基板40靠近所述上基板20的一侧上,其他与本发明前述实施例均相同,在此不再赘述。
本发明的显示面板,通过利用黑色矩阵50遮挡线栅偏光片10上线栅单元11之间的拼接缝,从而可以较大程度地降低大尺寸显示面板因拼接结构的偏光片的拼接不良及拼接缝隙所带来的影响,进而使得通过纳米压印制作的大尺寸的具有拼接结构的线栅偏光片在显示面板中得以应用,且制作方法简单。
请参阅图2,本发明还提供一种显示面板的制作方法,包括如下步骤:
步骤1、提供一待处理的面板,包括待压印的偏光片100、相对设置上、下基板20、40、及黑色矩阵50。
具体地,所述黑色矩阵50包括纵横交错的数个遮光条,所述遮光条的宽度为20μm以上。
具体地,所述黑色矩阵50设置在上基板20或下基板40的一侧上;优选地,所述黑色矩阵50设置在上基板20靠近所述下基板40的一侧上或下基板40靠近上基板20的一侧上。
步骤2、提供压印模板单元71,利用压印模板单元71在待压印的偏光片100上形成呈矩阵阵列方式拼接的数个线栅单元11,得到线栅偏光片10,其中,每一线栅单元11由对应的一个压印模板单元所形成。
具体地,所述步骤2中提供一个压印模板单元71,通过移动该压印模板单元,在待压印的偏光片上依次压印形成数个线栅单元11。
或者,如图3所示,所述步骤2中对应线栅偏光片10上的数个线栅单元11提供数个压印模板单元71,并将其拼接成一个拼接压印模板,利用该拼接压印模板在待压印的偏光片上通过一次压印形成数个线栅单元11。
具体地,所述步骤2提供的压印模板单元71为6-8寸的压印模板单元。
步骤3、得到显示面板,所述线栅偏光片10设置在上基板20或下基板40的一侧上,所述线栅单元11之间的拼接缝的正投影位于黑色矩阵50内。
优选地,所述线栅偏光片10设置在上基板20远离下基板40的一侧上或下基板40远离上基板20的一侧上。
综上所述,本发明的显示面板,包括相对设置的上、下基板、线栅偏光片、及黑色矩阵;所述线栅偏光片具有呈矩阵阵列方式拼接的数个线栅单元,所述线栅单元之间的拼接缝的正投影位于黑色矩阵内,通过利用黑色矩阵遮挡线栅偏光片上线栅单元之间的拼接缝,从而可以较大程度地降低大尺寸显示面板因拼接结构的偏光片的拼接不良及拼接缝隙所带来的影响;本发明的显示面板的制作方法,利用纳米压印模板制作大尺寸的具有拼接结构的线栅偏光片,即所述线栅偏光片上的线栅由数个线栅单元呈矩阵阵列方式拼接而成,并利用黑色矩阵遮挡线栅偏光片上数个线栅单元之间的拼接缝,从而可以较大程度地降低大尺寸显示面板因拼接结构的偏光片的拼接不良及拼接缝隙所带来的影响。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (13)

  1. 一种显示面板,包括相对设置的上基板与下基板、线栅偏光片、及黑色矩阵,所述黑色矩阵设置在上基板或下基板的一侧上,所述线栅偏光片设置在上基板或下基板的一侧上;
    所述线栅偏光片具有呈矩阵阵列方式拼接的数个线栅单元,所述线栅单元之间的拼接缝的正投影位于黑色矩阵内。
  2. 如权利要求1所述的显示面板,其中,所述线栅单元由6-8寸的压印模板单元所形成。
  3. 如权利要求1所述的显示面板,其中,所述线栅偏光片上的数个线栅单元由一个压印模板单元依次形成。
  4. 如权利要求1所述的显示面板,其中,所述线栅偏光片上的数个线栅单元由数个压印模板单元拼接而成的拼接压印模板所同时形成。
  5. 如权利要求1所述的显示面板,其中,所述黑色矩阵包括纵横交错的数个遮光条,所述遮光条的宽度为20μm以上。
  6. 一种显示面板的制作方法,包括如下步骤:
    步骤1、提供一待处理的面板,包括待压印的偏光片、相对设置的上基板与下基板、及黑色矩阵,所述黑色矩阵设置在上基板或下基板的一侧上;
    步骤2、提供压印模板单元,利用压印模板单元在待压印的偏光片上形成呈矩阵阵列方式拼接的数个线栅单元,得到线栅偏光片,其中,每一线栅单元由对应的一个压印模板单元所形成;
    步骤3、得到显示面板,所述线栅偏光片设置在上基板或下基板的一侧上,所述线栅单元之间的拼接缝的正投影位于黑色矩阵内。
  7. 如权利要求6所述的显示面板的制作方法,其中,所述步骤2中提供一个压印模板单元,通过移动该压印模板单元,在待压印的偏光片上依次压印形成数个线栅单元。
  8. 如权利要求6所述的显示面板的制作方法,其中,所述步骤2中对应线栅偏光片上的数个线栅单元提供数个压印模板单元,并将其拼接成一个拼接压印模板,利用该拼接压印模板在待压印的偏光片上通过一次压印形成数个线栅单元。
  9. 如权利要求6所述的显示面板的制作方法,其中,所述步骤2提供的压印模板单元为6-8寸的压印模板单元。
  10. 如权利要求6所述的显示面板的制作方法,其中,所述黑色矩阵 包括纵横交错的数个遮光条,所述遮光条的宽度为20μm以上。
  11. 一种显示面板,包括相对设置的上基板与下基板、线栅偏光片、及黑色矩阵,所述黑色矩阵设置在上基板或下基板的一侧上,所述线栅偏光片设置在上基板或下基板的一侧上;
    所述线栅偏光片具有呈矩阵阵列方式拼接的数个线栅单元,所述线栅单元之间的拼接缝的正投影位于黑色矩阵内;
    其中,所述线栅单元由6-8寸的压印模板单元所形成;
    其中,所述黑色矩阵包括纵横交错的数个遮光条,所述遮光条的宽度为20μm以上。
  12. 如权利要求11所述的显示面板,其中,所述线栅偏光片上的数个线栅单元由一个压印模板单元依次形成。
  13. 如权利要求11所述的显示面板,其中,所述线栅偏光片上的数个线栅单元由数个压印模板单元拼接而成的拼接压印模板所同时形成。
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