WO2017187951A1 - Development method, development device, and recording medium - Google Patents

Development method, development device, and recording medium Download PDF

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Publication number
WO2017187951A1
WO2017187951A1 PCT/JP2017/014713 JP2017014713W WO2017187951A1 WO 2017187951 A1 WO2017187951 A1 WO 2017187951A1 JP 2017014713 W JP2017014713 W JP 2017014713W WO 2017187951 A1 WO2017187951 A1 WO 2017187951A1
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WIPO (PCT)
Prior art keywords
developer
substrate
wafer
developing device
liquid
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PCT/JP2017/014713
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French (fr)
Japanese (ja)
Inventor
剛 下青木
祐作 橋本
福田　昌弘
公一朗 田中
Original Assignee
東京エレクトロン株式会社
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Publication of WO2017187951A1 publication Critical patent/WO2017187951A1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to a technique for performing development processing on a substrate that has been subjected to exposure processing.
  • a resist film is formed, and a developing solution is supplied to a substrate exposed along a predetermined pattern to form a resist pattern.
  • a developer is discharged from a developer nozzle toward a horizontally held semiconductor wafer (hereinafter referred to as “wafer”) to form a liquid pool on the surface of the wafer W, and the developer
  • the developing process is performed by spreading the liquid pool on the wafer W by moving the nozzle and rotating the wafer W.
  • a pattern is generated by exposing the substrate coated with a positive resist solution and making the exposed region soluble in the positive developer, thereby removing the exposed portion.
  • a negative developing process that generates a pattern by making a portion exposed by exposure on a substrate coated with a negative resist solution insoluble in a negative developer and dissolving and removing the unexposed portion.
  • polar solvents such as ketone solvents, ester solvents, alcohol solvents, amide solvents, ether solvents, and hydrocarbons are used.
  • System solvents are used.
  • a negative developer is supplied to the wafer to dissolve the resist film.
  • the wafer is rinsed after the development process, and the dissolved portion of the resist film is washed away together with the negative developer.
  • a rinsing liquid a rinsing liquid containing an organic solvent, for example, an organic solvent such as 4-methyl-2-pentanol is used.
  • the present invention has been made under such circumstances, and an object of the present invention is to provide a technique for suppressing line width disturbance after development when an exposed substrate is developed with an organic developer. It is in.
  • the development method of the present invention is a development method in which a resist is applied to the surface and an organic developer is supplied to the exposed substrate to perform a development process. Holding the exposed substrate horizontally; and Subsequently, supplying the developer to the surface of the substrate; Next, removing the developer on the surface of the substrate; And thereafter supplying a cleaning liquid made of an organic solvent for cleaning the substrate to the surface of the substrate.
  • a resist is applied on the surface and an organic developing process is performed on the substrate after being exposed.
  • a substrate holder for horizontally holding the substrate;
  • a rotation mechanism for rotating the substrate holder around the vertical axis;
  • a developer supply unit for supplying an organic developer to the surface of the substrate;
  • a cleaning liquid supply unit for supplying a cleaning liquid made of an organic solvent for cleaning the substrate to the surface of the substrate;
  • a removal mechanism for removing the developer on the surface of the substrate;
  • a controller that executes a step of supplying a developer to the surface of the substrate held horizontally, a step of removing the developer on the surface of the substrate by a removal mechanism, and a step of supplying a cleaning solution to the surface of the substrate thereafter.
  • the storage medium of the present invention is a storage medium storing a computer program used in a developing device that performs organic development processing on a substrate after a resist is coated on the surface and exposed.
  • the computer program has a set of steps so as to execute the developing method described above.
  • an organic developer is supplied to a substrate that has been subjected to exposure processing, the development processing is performed, and then the developer on the surface of the substrate is removed, and then the surface of the substrate is cleaned by supplying an organic solvent. I am doing so. For this reason, since a developing solution and an organic solvent are not mixed, melt
  • the developing device includes a spin chuck 12 that is a substrate holder.
  • the spin chuck 12 adsorbs the central portion of the back surface of the wafer W, which is a substrate, and holds the wafer W horizontally, and is configured to be rotatable about a vertical axis by a rotating mechanism 13 via a rotating shaft 131. ing.
  • a circular plate 22 is provided on the lower side of the spin chuck 12 so as to surround the rotating shaft 131 through a gap. Further, three through holes 22A are formed in the circular plate 22 in the circumferential direction, and the up and down pins 14 are provided in the respective through holes 22A.
  • a common lift plate 18 is provided below the lift pins 14, and the lift pins 14 are configured to be lifted and lowered by a lift mechanism 15 provided below the lift plate 18.
  • a cup body 20 is provided so as to surround the spin chuck 12.
  • the cup body 20 is configured to receive the drained liquid splashed or spilled from the rotating wafer W and to discharge the drained liquid to the outside of the developing device.
  • the cup body 20 includes a mountain-shaped guide portion 23 provided in a ring shape having a mountain-shaped cross section around the circular plate 22, and an annular end is formed at the outer peripheral end of the mountain-shaped guide portion 23 so as to extend downward.
  • a vertical wall 27 is provided.
  • the chevron guide part 23 guides the liquid spilled from the wafer W to the lower side outside the wafer W.
  • a cylindrical upper guide portion 28 configured so that the upper edge extends obliquely inward and upward so as to surround the outer side of the mountain-shaped guide portion 23 is provided.
  • the upper guide portion 28 is configured to be moved up and down by the lifting mechanism 21, and when the developer nozzle 3 and the rinse liquid nozzle 5 described later move above the wafer W, or between the spin chuck 12 and the external transfer arm.
  • the wafer W is transferred, it is lowered to the lowered position indicated by the solid line in FIG.
  • the wafer W is rotated and the processing liquid is shaken off from the surface of the wafer W, the wafer W rises to a rising position indicated by a dotted line in FIG.
  • a ring-shaped liquid receiving portion 24 whose section is a concave shape is provided below the upper guide portion 28, the mountain-shaped guide portion 23, and the vertical wall 27.
  • a drainage path 25 is connected to the outer peripheral side.
  • an exhaust pipe 26 is provided on the inner peripheral side of the liquid receiving portion 24 with respect to the drainage passage 25 so as to protrude from below.
  • the developing device includes a developer nozzle 3 for applying a developer to the wafer W.
  • the developer nozzle 3 is formed at a lower end of, for example, a cylindrical main body 30 smaller than the surface of the wafer W and is provided so as to face the surface of the wafer W. It has.
  • a discharge port 31 for discharging the developer is provided at the center of the lower surface of the contact portion 32.
  • the discharge port 31 is formed at the downstream end of the developer supply path 33 formed inside the main body 30 and the contact portion 32.
  • the developer nozzle 3 is held between the processing position for supplying the developer to the wafer W held by the arm 41 and held by the spin chuck 12 and a standby position (not shown) provided outside the cup body 20. Moving.
  • a developer supply pipe 36 is connected to the upstream end of the developer supply path 33, and the other end of the developer supply pipe 36 is used to develop the developer D, in this example, a negative resist.
  • a developer supply source 361 for supplying an organic developer such as butyl acetate is connected.
  • the developer supply source 361 includes a pump, a valve, and the like, and is configured to supply the developer D to the developer nozzle 3 in accordance with a control signal from the control unit 100 described later.
  • the developing device includes a rinsing liquid nozzle 5 for supplying a cleaning liquid (rinsing liquid) that is an organic solvent such as 4-methyl-2-pentanol toward the wafer W after the development processing.
  • the rinse liquid nozzle 5 is configured to supply a rinse liquid from above toward the wafer W, and is connected to a rinse liquid supply source 50 via a rinse liquid supply pipe 51.
  • the rinsing liquid nozzle 5 is held by an arm (not shown), and is between a processing position for supplying the rinsing liquid to the wafer W held by the spin chuck 12 and a standby position (not shown) provided outside the cup body 20. Move with.
  • the developing device includes a back surface side cleaning liquid nozzle 29 that supplies a cleaning liquid to the back surface of the wafer W held on the wafer W.
  • the back surface side cleaning liquid nozzle 29 is connected to a cleaning liquid supply unit (not shown), and cleans the back surface of the wafer W by supplying a cleaning liquid, for example, pure water, to the back surface of the wafer W that rotates when the rinse liquid is shaken off.
  • the developing device includes a control unit 100 including a computer.
  • a control unit 100 including a computer.
  • a program stored in a storage medium such as a flexible disk, a compact disk, a hard disk, an MO (magneto-optical disk), and a memory card is installed in the control unit 100.
  • the installed program incorporates instructions (steps) to transmit a control signal to each part of the developing device to control its operation.
  • a negative resist film (hereinafter referred to as “resist film”) in which an exposed area is insoluble in a developer is formed on the wafer W, and an exposure process is performed in which a circuit pattern is transferred to the wafer W by an exposure apparatus.
  • the wafer W on which the exposure processing has been performed is delivered to the spin chuck 12 by the cooperative action of, for example, an external transfer arm (not shown) and the lift pins 14.
  • the developer nozzle 3 moves from the standby position to above the central portion of the wafer W, and the contact portion 32 is lowered so as to face the wafer W in close proximity. In this manner, the developer D is discharged from the discharge port 31 to the wafer W in the state where the contact portion 32 is close to the wafer W, so that a liquid pool in a state of contacting the contact portion 32 is formed below the developer nozzle 3.
  • the rotation of the wafer W is started, and for example, the rotation speed of 10 rpm is maintained, and the developer nozzle 3 is moved toward the periphery of the wafer W as shown in FIGS.
  • the pool of the developer D is spread from the center of the wafer W toward the peripheral edge in a state where it is in contact with the contact portion 32 of the developer nozzle 3.
  • the supply of the developer D is stopped, and the developer nozzle 3 is retracted to a standby portion outside the cup body 20 (not shown).
  • a pool of the developer D is formed so as to cover the entire surface of the wafer W.
  • the rotation of the wafer W is stopped and, for example, it is stopped for 15 to 60 seconds.
  • the resist is insoluble in the developer D by exposure. Therefore, a liquid pool of the developer D is formed and the liquid pool is made stationary with respect to the wafer W, whereby the unexposed soluble part in the resist film reacts with the developer D and dissolves.
  • the rotation of the wafer W is started, and the rotation speed of 2500 rpm or less, for example, 2000 rpm is maintained for 5 to 20 seconds, for example, 15 seconds.
  • the part of the resist film dissolved by reacting with the developing solution has high fluidity, and therefore is removed by being shaken off together with the developing solution D supplied to the surface of the wafer W by the rotation of the wafer W.
  • the surface of the wafer W is dried, and for example, interference fringes due to the developer D are not visible on the surface of the wafer W.
  • the rinsing liquid nozzle 5 is moved to a position for discharging toward the center of the wafer W.
  • the rotation speed of the wafer W is reduced to 500 to 1500 rpm, for example, 1000 rpm, and a rinsing liquid R as an organic solvent is supplied toward the center of the wafer W.
  • a pool of the rinse liquid R is formed on the surface of the wafer W and spreads toward the periphery of the wafer W.
  • the exposed area becomes insoluble in the developer D, but the developer (organic solution) D and the rinse solution (organic solvent) R
  • the mixed solution may be dissolved. This is because the organic developer and the organic solvent are mixed, so that the difference in the solubility parameter value between the mixed solution and the resist solution is larger than the difference in the solubility parameter value between each solution and the resist film. It is presumed that this is due to the smaller size.
  • the wafer W is rotated to shake off the developer D and dry the surface of the wafer W. Yes.
  • the rotation speed of the wafer W is maintained at 2500 rpm or less, for example, 2000 rpm, the rinse liquid R on the front surface of the wafer W is shaken off, and the cleaning liquid is supplied from the back surface side cleaning liquid nozzle 29 toward the back surface of the wafer W. To do. Thereby, on the surface of the wafer W, along with the rinse liquid R, the dissolved resist film is washed away and removed. Further, the back side of the wafer W is also cleaned.
  • the negative developing solution D is supplied to the wafer W on which the exposure processing has been performed, the developing processing is performed, and then the wafer W is rotated to shake off the surface developing solution D and dry. Then, the rinse liquid R is supplied to clean the surface of the wafer W. For this reason, the developing solution D and the rinsing solution R are not mixed, and dissolution of the portion insoluble in the resist film by the mixed solution can be suppressed. Therefore, the disturbance of the line width of the circuit pattern formed on the wafer W can be suppressed.
  • the rotation speed of the wafer W in the step of shaking off the developer D from the wafer W is 2500 rpm or less.
  • the wafer W may be rotated and the nitrogen (N 2 ) gas may be supplied toward the wafer W in the process of rotating the wafer W and shaking off the developer D.
  • N 2 nitrogen
  • a configuration in which a gas nozzle that discharges N 2 gas toward the wafer W is provided at a position that does not interfere with the developer nozzle 3 and the rinsing liquid nozzle 5 can be given.
  • N 2 gas is discharged with the gas nozzle 90 directed toward the center of the wafer W as shown in FIG. Move to the position you want.
  • N 2 gas is discharged from the gas nozzle 90 toward the wafer W, and the wafer W is rotated for 15 seconds at a rotational speed of, for example, 2500 rpm.
  • the discharge position of the gas discharged from the gas nozzle 90 may remain at the center of the wafer W.
  • the gas nozzle 90 is scanned to set the discharge position to the center of the wafer W. You may make it move to a peripheral part from a part.
  • the rinse liquid for the wafer W may be supplied. By rotating the wafer W to shake off the developer D and supplying the N 2 gas to dry the surface of the wafer W, drying of the surface of the wafer W can be promoted. The rotation time can be shortened and the rotation speed of the wafer W can be decreased.
  • the dried air is fed above the cup body 20. You may supply toward.
  • the humidity of the atmosphere around the wafer W can be lowered in the step of rotating the wafer W and shaking off the developer D. By reducing the humidity of the atmosphere around the wafer W, drying of the surface of the wafer W is further promoted.
  • the developing device includes a cup body 6, a developer nozzle 3, a rinse liquid nozzle 5, and a pure water nozzle 8.
  • the cup body 6 is drained of pure water and drained of an organic solvent such as the developer D and the rinsing solution R, for example, according to the request of the factory where the developing device is installed. Are configured to be discharged out of the cup body 6 so as not to be mixed with each other.
  • the cup body 6 includes a movable cup 60 for forming two separate drainage paths.
  • the movable cup 60 is provided so as to surround the periphery of the wafer W, the circular plate 22 and the mountain-shaped guide portion 23 placed on the spin chuck 12.
  • the movable cup 60 is configured by stacking circular ring plates 60A and 60B that are inclined from the center side of the cup body 6 toward the peripheral edge thereof with an interval in the vertical direction.
  • the lower ring plate 60B is bent halfway downward, and the lower end portion thereof is a cylindrical portion 60C formed so as to extend in the vertical direction.
  • a protrusion 60D protruding inward is provided over the entire circumference at a position from below in the inner surface of the cylindrical portion 60C.
  • 7 in FIG. 9 is a raising / lowering mechanism which raises / lowers the movable cup 60 between the raising position and the lowering position.
  • the cup body 6 includes a cylindrical outer cup 63 so as to surround the outer side of the movable cup 60.
  • the upper end of the outer cup 63 is bent horizontally toward the center side, and the lower end of the outer cup 63 is formed with a ring-shaped liquid receiving portion 62 whose section is a concave shape.
  • the liquid receiving portion 62 is provided with partition walls 61 ⁇ / b> A and 61 ⁇ / b> B standing upright and concentrically in this order toward the periphery of the outer cup 63.
  • annular recesses 62A, 62B, 62C are formed concentrically in this order toward the periphery of the outer cup 63 by the partition walls 61A, 61B and the side wall of the outer cup 63, and the recess 62A , 62B, 62C are respectively provided with an exhaust port 64, a drain port 65, and a drain port 66.
  • the drain port 65 is connected to a drain pipe 67 that drains the organic processing liquid, and the drain port 66 drains a drain that does not contain an organic solvent such as pure water. It is connected to the.
  • 69 in FIG. 9 is an exhaust pipe.
  • the movable cup 60 when the movable cup 60 is set at the raised position indicated by the dotted line in FIG. 9, the upper end of the upper ring plate 60A and the upper surface of the outer cup 63 are close to each other, and the lower ring plate 60B The lower surface of the inner peripheral edge is positioned above the surface of the wafer W so that the processing liquid scattered from the wafer W can be received. Further, the protrusion 60D of the movable cup 60 is located above the partition wall 61B. When the organic processing liquid is shaken off from the wafer W, the movable cup 60 is raised to the raised position. As a result, the processing liquid shaken off from the wafer W is received by the movable cup 60, flows into the recess 62 ⁇ / b> B, and is drained from the drain port 65.
  • the cylindrical portion 60C is located in the recess 62C.
  • the upper end of the upper ring plate 60A is located at the same or substantially the same height as the surface of the wafer W.
  • the pure water nozzle 8 is configured to discharge pure water as a replacement fluid toward the surface side of the wafer W.
  • the pure water nozzle 8 is connected to a pure water supply source 80 via a pure water supply pipe 81.
  • the pure water nozzle 8 is held by an arm (not shown) and is configured to be movable between the upper portion of the wafer W held by the spin chuck 12 and a standby unit (not shown) outside the cup body 6.
  • the movable cup 60 is positioned at the lowered position, and the developer D is applied to the surface of the wafer W. Then, as shown in FIG. 4, a pool of developer D is formed on the surface of the wafer W, the wafer W is stopped and developed, and then the pure water nozzle 8 is moved to a position for discharging toward the center of the wafer W. Let Thereafter, the rotation of the wafer W is started, the rotation speed of 500 to 1500 rpm, for example, 1000 rpm is maintained, and pure water P is supplied toward the center of the wafer W for 5 to 20 seconds, for example, 15 seconds.
  • the pure water P supplied to the center of the wafer W spreads from the center of the wafer W toward the periphery by the rotation of the wafer W. Therefore, as shown in FIG. 10, the developer D is swept away by the pure water P and shaken off from the periphery of the wafer W. As a result, the liquid pool on the surface of the wafer W is replaced with the pure water P from the developer D.
  • the position of the movable cup 60 the supply of pure water P is started with the movable cup 60 set at the lowered position, and after the developer D on the surface of the wafer W has been shaken off, the movable cup 60 is moved to the raised position. The pure water P is shaken off from the wafer W.
  • the pure water nozzle 8 is retracted to the outside of the cup body 6, and the rinse liquid nozzle 5 is moved to a position for discharging toward the center of the wafer W.
  • the rotation speed of the wafer W is maintained at 500 to 1500 rpm, for example, 1000 rpm, and the rinse liquid R is supplied toward the center of the wafer W. Therefore, as shown in FIG. 11, the rinsing liquid R supplied to the center of the wafer W gradually spreads from the center of the wafer W toward the periphery.
  • the pure water P on the surface of the wafer W is swept away from the wafer W, and the liquid pool on the surface of the wafer W is replaced with the rinsing liquid R from the pure water P.
  • the movable cup 60 At the start of the supply of the rinsing liquid R, the movable cup 60 is set to the ascending position, and after the pure water P on the surface of the wafer W has been shaken off, the movable cup 60 is moved to the descending position. Shake off. Thereafter, the supply of the rinsing liquid R is stopped, and the wafer W is rotated so that the dissolved portion of the resist film together with the rinsing liquid R is shaken off and removed.
  • the developing device After supplying the developing solution D to the wafer W, the reservoir of the developing solution D is replaced with pure water P, and then the rinsing solution R is supplied. Therefore, since mixing with the developing solution D and the rinse liquid R can be prevented, dissolution of the pattern part of a resist film can be suppressed.
  • pure water P is used as the replacement fluid for replacing the developer.
  • pure water containing a surfactant may be used, for example.
  • An organic solvent may be used as the replacement fluid.
  • the organic solvent supplied as the replacement fluid is mixed with the organic solvent and the organic developer, the difference between the values of the solubility parameters between the respective solutions and the resist film is larger than that between the mixed solution and the resist solution. Any organic solvent in which the difference in the values of the solubility parameters becomes large can be used as a replacement fluid because dissolution of the insoluble region in the negative-type developer after exposure can be suppressed.
  • a gas may be used as a replacement fluid for replacing the developer D.
  • a gas supply nozzle that supplies dry air toward the center of the wafer W is provided, and the developer D is pushed away by a gas flow that flows from the center of the wafer W toward the periphery.
  • an inert gas or the like may be used as the replacement fluid.
  • the replacement fluid may be steam or mist. Steam is included in the gas.
  • the present invention may also be applied to a developing device that supplies the developing solution D, pure water P, and rinsing solution R while the wafer W is stationary.
  • the developing nozzle 3, the rinsing liquid nozzle 5 and the pure water nozzle 8 are each provided with discharge ports in a range longer than the length of the diameter of the wafer W, and each nozzle is moved horizontally in a direction perpendicular to the direction in which the discharge ports extend. In other words, it may be configured to scan from one end of the wafer W to the other end. Even in such a developing apparatus, the developer D on the surface of the wafer W can be removed by supplying the pure water P after forming the pool of the developer D, and thus the same effect can be obtained.
  • the present invention may be a developing process for a positive resist film in which an exposed area in the resist film is soluble in a developer.
  • a developing process for a positive resist film in which an exposed area in the resist film is soluble in a developer.
  • an organic developer D is used as the developer D and the developer D and the rinse R after the development treatment are mixed, there are also portions of the resist film that are not exposed to insolubility. There is a risk of dissolution. Therefore, after supplying the developing solution D to the wafer W, removing the developing solution D, and then supplying the rinsing solution R, the same effect can be obtained.
  • CD Critical dimension
  • CDU Critical Dimension Uniformity
  • the CD was measured at each measurement point in each rectangular area, and the CDU of the wafer W was calculated.
  • Table 1 shows CDU in each wafer W of the reference example, the comparative example, and the example.
  • the value obtained as follows. Assuming that the nine measurement points already described in each rectangular area are P1, P2,... P9, the CD value in P1 of each rectangular area is extracted, and the average value of these CD values is used as the mask value of P1. Mask values are similarly obtained for P2 to P9. Then, the mask value m (P1) of P1 is subtracted from the CD value (actually measured value) measured at P1 for each rectangular area. Similarly for P2 to P9, the mask value of the corresponding measurement point is subtracted from the measured CD value (actually measured value).
  • the CDU is obtained based on the CD value after mask processing (a value obtained by subtracting the mask value from the actual measurement value). If this calculation is expressed functionally, it can be said that the CD value caused by the process component is obtained by subtracting the CD value caused by the mask at the time of exposure from the measured data of CD.
  • the inter CDU is a CDU obtained by obtaining a rectangular area average value that is an average value of the CD values of P1 to P9 for each rectangular area and calculating based on the rectangular area average value in each rectangular area.
  • the intra CDU has a region average value (the CD value corresponding to P1 to P9 in each rectangular region is the same value (average value)) from the CD value (the value obtained by subtracting the mask value from the actual measurement value) used when calculating the global CDU. CD value obtained by subtracting (A).
  • the global CDU was 1.04, the inter CDU was 0.70, and the intra CDU was 0.78.
  • the global CDU was 1.11, the inter CDU was 0.72, and the intra CDU was 0.72.
  • the CDU was 0.85.
  • the global CDU was 1.04, the inter CDU was 0.69, and the intra CDU was 0.78.
  • the CDU is larger in the comparative example than in the reference example, and after supplying the developing solution D, the rinse solution R is supplied without performing the step of shaking off the developing solution D. It can be said that the in-plane uniformity becomes worse.
  • the example has a smaller CDU than the comparative example. Therefore, after supplying the developing solution D, supplying the rinsing solution R after performing the step of shaking off the developing solution D compared to the case of supplying the rinsing solution R without performing the step of shaking off the developing solution D. A CD equivalent to that obtained when no rinse solution is supplied is obtained, and it can be said that the in-plane uniformity of the CD is improved.

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

[Problem] To provide a technology for suppressing post-development line width unsteadiness during development of an exposed wafer using a developer. [Solution] A negative-type developer D is supplied to a wafer W that has been subjected to an exposure process, and a development process is performed. Then, after drying by rotating the wafer W to drain the developer D on the surface, or after pure water P is supplied to the surface of the wafer W and the pure water P replaces the developer D as a liquid residue on the surface of the wafer W, a rinse fluid R is supplied to clean the surface of the wafer W. Accordingly, the developer D and the rinse fluid R do not become mixed, thus suppressing the dissolution, by the mixed solution of the developer D and the rinse fluid R, of a portion of a resist film that has been made insoluble by the exposure. Thus, the unsteadiness in the line width of a circuit pattern formed on the wafer W can be suppressed.

Description

現像方法、現像装置及び記憶媒体Development method, development device, and storage medium
　本発明は、露光処理が行われた基板に現像処理を行う技術に関する。 The present invention relates to a technique for performing development processing on a substrate that has been subjected to exposure processing.
　半導体装置の製造におけるフォトリソグラフィ工程では、レジスト膜が形成され、所定のパターンに沿って露光された基板に対して現像液が供給され、レジストパターンが形成される。例えば特許文献１に記載されるように、水平に保持した半導体ウエハ（以下「ウエハ」という）に向けて現像液ノズルから現像液を吐出してウエハＷの表面に液溜まりを形成し、現像液ノズルの移動とウエハＷの回転とにより、当該液溜まりをウエハＷに広げることにより現像処理が行われている。 In a photolithography process in the manufacture of a semiconductor device, a resist film is formed, and a developing solution is supplied to a substrate exposed along a predetermined pattern to form a resist pattern. For example, as described in Patent Document 1, a developer is discharged from a developer nozzle toward a horizontally held semiconductor wafer (hereinafter referred to as “wafer”) to form a liquid pool on the surface of the wafer W, and the developer The developing process is performed by spreading the liquid pool on the wafer W by moving the nozzle and rotating the wafer W.
　現像処理においては、ポジ型レジスト液を塗布した基板を露光して、露光された領域をポジ型現像液に対して可溶とすることで、露光された箇所を除去することでパターンを生成するポジ型現像処理と、ネガ型レジスト液を塗布した基板を露光により露光された箇所をネガ型現像液に対して不溶とし、露光されていない箇所を溶解させて除去することでパターンを生成するネガ型現像処理とがある。 In the development process, a pattern is generated by exposing the substrate coated with a positive resist solution and making the exposed region soluble in the positive developer, thereby removing the exposed portion. A negative developing process that generates a pattern by making a portion exposed by exposure on a substrate coated with a negative resist solution insoluble in a negative developer and dissolving and removing the unexposed portion. There is a mold development process.
　例えば特許文献２に記載されているようにネガ型現像処理においては、ネガ型現像液として、ケトン系溶剤、エステル系溶剤、アルコール系溶剤、アミド系溶剤、エーテル系溶剤等の極性溶剤及び炭化水素系溶剤が用いられる。そしてウエハにネガ型現像液を供給してレジスト膜を溶解させる。その後プロセスの欠陥対策として、現像処理に続いてウエハにリンス処理が行われ、ネガ型現像液と共にレジスト膜の溶解した部位が洗い流される。このようなリンス液として有機溶媒、例えば４メチル２ペンタノールなどの有機溶剤を含むリンス液が用いられるが、ネガ型現像液と、有機溶剤であるリンス液と、が混合されると、混合液により、露光後のネガ型現像液に対して不溶解性とした領域も溶解してしまうことがある。近年では、ウエハに形成する回路パターンが微細化しており、パターンの線幅であるＣＤ（Critical Dimension）の均一性が求められているが、不溶解性とした領域も溶解によるＣＤの乱れや、ＬＥＲ（Line Edge Roughness）の悪化が問題となるおそれがあった。 For example, as described in Patent Document 2, in negative development processing, as a negative developer, polar solvents such as ketone solvents, ester solvents, alcohol solvents, amide solvents, ether solvents, and hydrocarbons are used. System solvents are used. Then, a negative developer is supplied to the wafer to dissolve the resist film. Thereafter, as a countermeasure against defects in the process, the wafer is rinsed after the development process, and the dissolved portion of the resist film is washed away together with the negative developer. As such a rinsing liquid, a rinsing liquid containing an organic solvent, for example, an organic solvent such as 4-methyl-2-pentanol is used. When a negative developer and a rinsing liquid that is an organic solvent are mixed, the mixed liquid As a result, the region insoluble in the negative developer after exposure may be dissolved. In recent years, the circuit pattern formed on the wafer has been miniaturized, and the uniformity of CD (Critical Dimension), which is the line width of the pattern, is demanded. Deterioration of LER (Line Edge Roughness) may be a problem.
特開２０１６－２９７０３号公報JP 2016-29703 A 特開２０１２－１９１１６８号公報JP 2012-191168 A
　本発明は、このような事情の下になされたものであり、その目的は、露光した基板を有機系の現像液により現像するにあたって、現像後の線幅の乱れを抑制する技術を提供することにある。 The present invention has been made under such circumstances, and an object of the present invention is to provide a technique for suppressing line width disturbance after development when an exposed substrate is developed with an organic developer. It is in.
　本発明の現像方法は、表面にレジストが塗布され、露光された後の基板に有機系の現像液を供給して現像処理を行う現像方法において、
　露光された後の基板を水平に保持する工程と、
　続いて基板の表面に前記現像液を供給する工程と、
　次いで基板の表面の現像液を除去する工程と、
　その後基板の表面に、基板を洗浄する有機溶剤からなる洗浄液を供給する工程と、を含むことを特徴とする。 The development method of the present invention is a development method in which a resist is applied to the surface and an organic developer is supplied to the exposed substrate to perform a development process.
Holding the exposed substrate horizontally; and
Subsequently, supplying the developer to the surface of the substrate;
Next, removing the developer on the surface of the substrate;
And thereafter supplying a cleaning liquid made of an organic solvent for cleaning the substrate to the surface of the substrate.
　本発明の現像装置は、表面にレジストが塗布され、露光された後の基板に有機現像処理を行う現像装置において、
　基板を水平に保持する基板保持部と、
　基板保持部を鉛直軸周りに回転させる回転機構と、
　基板の表面に有機系の現像液を供給する現像液供給部と、
　基板の表面に、基板を洗浄する有機溶剤からなる洗浄液を供給する洗浄液供給部と、
　基板の表面の現像液を除去する除去機構と、
　水平に保持した基板の表面に現像液を供給するステップと、次いで除去機構により、基板の表面の現像液を除去するステップと、その後基板の表面に洗浄液を供給するステップとを実行する制御部と、を備えたことを特徴とする。 In the developing device of the present invention, a resist is applied on the surface and an organic developing process is performed on the substrate after being exposed.
A substrate holder for horizontally holding the substrate;
A rotation mechanism for rotating the substrate holder around the vertical axis;
A developer supply unit for supplying an organic developer to the surface of the substrate;
A cleaning liquid supply unit for supplying a cleaning liquid made of an organic solvent for cleaning the substrate to the surface of the substrate;
A removal mechanism for removing the developer on the surface of the substrate;
A controller that executes a step of supplying a developer to the surface of the substrate held horizontally, a step of removing the developer on the surface of the substrate by a removal mechanism, and a step of supplying a cleaning solution to the surface of the substrate thereafter. , Provided.
　本発明の記憶媒体は、表面にレジストが塗布され、露光された後の基板に有機現像処理を行う現像装置に用いられるコンピュータプログラムを記憶した記憶媒体であって、
　前記コンピュータプログラムは、上述の現像方法を実行するようにステップ群が組まれていることを特徴とする The storage medium of the present invention is a storage medium storing a computer program used in a developing device that performs organic development processing on a substrate after a resist is coated on the surface and exposed.
The computer program has a set of steps so as to execute the developing method described above.
　本発明は、露光処理が行われた基板に有機系の現像液を供給して、現像処理を行い、次いで基板表面の現像液を除去した後、有機溶剤を供給して基板の表面を洗浄するようにしている。このため現像液と有機溶剤とが混合されないので、混合液によるレジスト膜における不溶部分の溶解を抑制することができる。従って基板に形成される回路パターンの線幅の乱れを抑制することができる。 In the present invention, an organic developer is supplied to a substrate that has been subjected to exposure processing, the development processing is performed, and then the developer on the surface of the substrate is removed, and then the surface of the substrate is cleaned by supplying an organic solvent. I am doing so. For this reason, since a developing solution and an organic solvent are not mixed, melt | dissolution of the insoluble part in a resist film by a liquid mixture can be suppressed. Therefore, it is possible to suppress the disturbance of the line width of the circuit pattern formed on the substrate.
第１の実施の形態に係る現像装置を示す断面図である。It is sectional drawing which shows the developing device which concerns on 1st Embodiment. 前記現像装置に設けられた現像液ノズルを示す断面図である。It is sectional drawing which shows the developing solution nozzle provided in the said developing device. 第１の実施の形態に係る現像装置の作用を示す説明図である。It is explanatory drawing which shows the effect | action of the developing device which concerns on 1st Embodiment. 第１の実施の形態に係る現像装置の作用を示す説明図である。It is explanatory drawing which shows the effect | action of the developing device which concerns on 1st Embodiment. 第１の実施の形態に係る現像装置の作用を示す説明図である。It is explanatory drawing which shows the effect | action of the developing device which concerns on 1st Embodiment. 第１の実施の形態に係る現像装置の作用を示す説明図である。It is explanatory drawing which shows the effect | action of the developing device which concerns on 1st Embodiment. 第１の実施の形態に係る現像装置の作用を示す説明図である。It is explanatory drawing which shows the effect | action of the developing device which concerns on 1st Embodiment. 第１の実施の形態に係る現像装置の他の例の作用を示す説明図である。It is explanatory drawing which shows the effect | action of the other example of the developing device which concerns on 1st Embodiment. 第２の実施の形態に係る現像装置を示す断面図である。It is sectional drawing which shows the developing device which concerns on 2nd Embodiment. 第２の実施の形態に係る現像装置の作用を示す説明図である。It is explanatory drawing which shows the effect | action of the developing device which concerns on 2nd Embodiment. 第２の実施の形態に係る現像装置の作用を示す説明図である。It is explanatory drawing which shows the effect | action of the developing device which concerns on 2nd Embodiment.
　本発明の実施の形態に係る現像方法を実行する現像装置について説明する。図１に示すように現像装置は、基板保持部であるスピンチャック１２を備えている。このスピンチャック１２は、基板であるウエハＷの裏面中央部を吸着して、ウエハＷを水平に保持するものであり、回転軸１３１を介して回転機構１３により鉛直軸まわりに回転自在に構成されている。 A developing device that executes the developing method according to the embodiment of the present invention will be described. As shown in FIG. 1, the developing device includes a spin chuck 12 that is a substrate holder. The spin chuck 12 adsorbs the central portion of the back surface of the wafer W, which is a substrate, and holds the wafer W horizontally, and is configured to be rotatable about a vertical axis by a rotating mechanism 13 via a rotating shaft 131. ing.
　スピンチャック１２の下方側には、回転軸１３１を隙間を介して取り囲むように円形板２２が設けられる。また円形板２２に周方向に３か所の貫通孔２２Ａが形成され、各貫通孔２２Ａには各々昇降ピン１４が設けられている。これら昇降ピン１４の下方には、共通の昇降板１８が設けられ、昇降ピン１４は昇降板１８の下方に設けられた昇降機構１５により昇降自在に構成されている。 A circular plate 22 is provided on the lower side of the spin chuck 12 so as to surround the rotating shaft 131 through a gap. Further, three through holes 22A are formed in the circular plate 22 in the circumferential direction, and the up and down pins 14 are provided in the respective through holes 22A. A common lift plate 18 is provided below the lift pins 14, and the lift pins 14 are configured to be lifted and lowered by a lift mechanism 15 provided below the lift plate 18.
　またスピンチャック１２を取り囲むようにカップ体２０が設けられている。カップ体２０は、回転するウエハＷより飛散したり、こぼれ落ちた排液を受け止め、当該排液を現像装置外に排出するように構成されている。カップ体２０は、前記円形板２２の周囲に断面形状が山型のリング状に設けられた山型ガイド部２３を備え、山型ガイド部２３の外周端には、下方に伸びるように環状の垂直壁２７が設けられている。山型ガイド部２３は、ウエハＷよりこぼれ落ちた液を、ウエハＷの外側下方へとガイドする。 Further, a cup body 20 is provided so as to surround the spin chuck 12. The cup body 20 is configured to receive the drained liquid splashed or spilled from the rotating wafer W and to discharge the drained liquid to the outside of the developing device. The cup body 20 includes a mountain-shaped guide portion 23 provided in a ring shape having a mountain-shaped cross section around the circular plate 22, and an annular end is formed at the outer peripheral end of the mountain-shaped guide portion 23 so as to extend downward. A vertical wall 27 is provided. The chevron guide part 23 guides the liquid spilled from the wafer W to the lower side outside the wafer W.
　また、山型ガイド部２３の外側を取り囲むように上縁が内側上方へ向けて斜めに伸びるように構成された筒状の上側ガイド部２８が設けられている。上側ガイド部２８は、昇降機構２１により昇降するように構成され、ウエハＷの上方を後述する現像液ノズル３、リンス液ノズル５が移動するときや、スピンチャック１２と外部の搬送アームとの間でウエハＷの受け渡しを行うときには、図１中実線で示す下降位置に下降する。そしてウエハＷを回転させて、ウエハＷの表面から処理液を振り切るときには、図１中の点線で示す上昇位置に上昇する。上側ガイド部２８、山型ガイド部２３及び垂直壁２７の下方には、断面が凹部型となるリング状の液受け部２４が設けられている。この液受け部２４においては、外周側に排液路２５が接続されている。また液受け部２４における排液路２５よりも内周側には、排気管２６が下方から突入する形で設けられている。 Further, a cylindrical upper guide portion 28 configured so that the upper edge extends obliquely inward and upward so as to surround the outer side of the mountain-shaped guide portion 23 is provided. The upper guide portion 28 is configured to be moved up and down by the lifting mechanism 21, and when the developer nozzle 3 and the rinse liquid nozzle 5 described later move above the wafer W, or between the spin chuck 12 and the external transfer arm. When the wafer W is transferred, it is lowered to the lowered position indicated by the solid line in FIG. When the wafer W is rotated and the processing liquid is shaken off from the surface of the wafer W, the wafer W rises to a rising position indicated by a dotted line in FIG. A ring-shaped liquid receiving portion 24 whose section is a concave shape is provided below the upper guide portion 28, the mountain-shaped guide portion 23, and the vertical wall 27. In the liquid receiver 24, a drainage path 25 is connected to the outer peripheral side. Further, an exhaust pipe 26 is provided on the inner peripheral side of the liquid receiving portion 24 with respect to the drainage passage 25 so as to protrude from below.
　また現像装置は、ウエハＷに現像液を塗布するための現像液ノズル３を備えている。図２に示すように現像液ノズル３は、例えば円柱形状の本体部３０の下端に、ウエハＷの表面よりも小さく形成されると共に前記ウエハＷの表面と対向するように設けられた接触部３２を備えている。接触部３２の下面の中心部には現像液を吐出する吐出口３１が設けられている。吐出口３１は、本体部３０及び接触部３２の内部に形成された現像液供給路３３の下流側端部に形成されている。現像液ノズル３は、アーム４１により保持され、スピンチャック１２に保持されたウエハＷに対して現像液を供給する処理位置と、カップ体２０の外部に設けられた図示しない待機位置との間で移動する。 Further, the developing device includes a developer nozzle 3 for applying a developer to the wafer W. As shown in FIG. 2, the developer nozzle 3 is formed at a lower end of, for example, a cylindrical main body 30 smaller than the surface of the wafer W and is provided so as to face the surface of the wafer W. It has. A discharge port 31 for discharging the developer is provided at the center of the lower surface of the contact portion 32. The discharge port 31 is formed at the downstream end of the developer supply path 33 formed inside the main body 30 and the contact portion 32. The developer nozzle 3 is held between the processing position for supplying the developer to the wafer W held by the arm 41 and held by the spin chuck 12 and a standby position (not shown) provided outside the cup body 20. Moving.
　現像液供給路３３の上流側端部には、現像液供給管３６の一端が接続され、現像液供給管３６の他端には、現像液Ｄ、この例ではネガ型レジストを現像するための酢酸ブチルなどの有機系の現像液を供給するための現像液供給源３６１が接続されている。この現像液供給源３６１は、ポンプやバルブなどを備え、後述の制御部１００からの制御信号に従って、現像液ノズル３へ現像液Ｄを供給するように構成されている。 One end of a developer supply pipe 36 is connected to the upstream end of the developer supply path 33, and the other end of the developer supply pipe 36 is used to develop the developer D, in this example, a negative resist. A developer supply source 361 for supplying an organic developer such as butyl acetate is connected. The developer supply source 361 includes a pump, a valve, and the like, and is configured to supply the developer D to the developer nozzle 3 in accordance with a control signal from the control unit 100 described later.
　また現像装置は、現像処理後のウエハＷに向けて例えば４メチル２ペンタノールなどの有機溶剤である洗浄液（リンス液）を供給するためのリンス液ノズル５を備えている。リンス液ノズル５は、ウエハＷに向けて上方からリンス液を供給するように構成されており、リンス液供給管５１を介してリンス液供給源５０に接続されている。またリンス液ノズル５は図示しないアームにより保持され、スピンチャック１２に保持されたウエハＷに対してリンス液を供給する処理位置と、カップ体２０の外部に設けられた図示しない待機位置との間で移動する。
　また現像装置は、ウエハＷに保持されたウエハＷの裏面に洗浄液を供給する裏面側洗浄液ノズル２９を備えている。裏面側洗浄液ノズル２９は、図示しない洗浄液供給部に接続されており、リンス液を振り切る時に回転するウエハＷの裏面に洗浄液、例えば純水を供給して、ウエハＷの裏面を洗浄する。 Further, the developing device includes a rinsing liquid nozzle 5 for supplying a cleaning liquid (rinsing liquid) that is an organic solvent such as 4-methyl-2-pentanol toward the wafer W after the development processing. The rinse liquid nozzle 5 is configured to supply a rinse liquid from above toward the wafer W, and is connected to a rinse liquid supply source 50 via a rinse liquid supply pipe 51. The rinsing liquid nozzle 5 is held by an arm (not shown), and is between a processing position for supplying the rinsing liquid to the wafer W held by the spin chuck 12 and a standby position (not shown) provided outside the cup body 20. Move with.
Further, the developing device includes a back surface side cleaning liquid nozzle 29 that supplies a cleaning liquid to the back surface of the wafer W held on the wafer W. The back surface side cleaning liquid nozzle 29 is connected to a cleaning liquid supply unit (not shown), and cleans the back surface of the wafer W by supplying a cleaning liquid, for example, pure water, to the back surface of the wafer W that rotates when the rinse liquid is shaken off.
　また現像装置は、コンピュータからなる制御部１００を備えている。制御部１００には、例えばフレキシブルディスク、コンパクトディスク、ハードディスク、ＭＯ（光磁気ディスク）及びメモリーカードなどの記憶媒体に格納されたプログラムがインストールされる。インストールされたプログラムは、現像装置の各部に制御信号を送信してその動作を制御するように命令（各ステップ）が組み込まれている。 Further, the developing device includes a control unit 100 including a computer. For example, a program stored in a storage medium such as a flexible disk, a compact disk, a hard disk, an MO (magneto-optical disk), and a memory card is installed in the control unit 100. The installed program incorporates instructions (steps) to transmit a control signal to each part of the developing device to control its operation.
　続いて第１の実施の形態に係る現像装置の作用について説明する。例えば露光された領域が現像液に対して不溶となるネガ型レジスト膜（以下「レジスト膜」という）がウエハＷに成膜され、当該ウエハＷに露光装置にて回路パターンを転写する露光処理が行われる。
　露光処理が行われたウエハＷは、例えば図示しない外部の搬送アームと、昇降ピン１４と、の協働作用により、スピンチャック１２に受け渡される。次いで現像液ノズル３が待機位置からウエハＷの中心部の上方に移動し、接触部３２がウエハＷに近接して対向するように下降する。このように接触部３２がウエハＷに近接した状態で、吐出口３１からウエハＷに現像液Ｄを吐出することで、現像液ノズル３の下方に当該接触部３２に接触した状態の液溜まりを形成する。 Next, the operation of the developing device according to the first embodiment will be described. For example, a negative resist film (hereinafter referred to as “resist film”) in which an exposed area is insoluble in a developer is formed on the wafer W, and an exposure process is performed in which a circuit pattern is transferred to the wafer W by an exposure apparatus. Done.
The wafer W on which the exposure processing has been performed is delivered to the spin chuck 12 by the cooperative action of, for example, an external transfer arm (not shown) and the lift pins 14. Next, the developer nozzle 3 moves from the standby position to above the central portion of the wafer W, and the contact portion 32 is lowered so as to face the wafer W in close proximity. In this manner, the developer D is discharged from the discharge port 31 to the wafer W in the state where the contact portion 32 is close to the wafer W, so that a liquid pool in a state of contacting the contact portion 32 is formed below the developer nozzle 3. Form.
　しかる後、ウエハＷの回転を開始し、例えば１０ｒｐｍの回転数を維持すると共に、図３（ａ）、（ｂ）に示すように現像液ノズル３をウエハＷの周縁に向けて移動させる。これによって図３（ｂ）に示すように現像液Ｄの液溜まりは前記現像液ノズル３の接触部３２に接した状態で、ウエハＷの中心から周縁部へ向けて広げられる。そして現像液ノズル３はウエハＷの周縁まで移動した後、現像液Ｄの供給を停止し、図示しないカップ体２０の外部の待機部に退避する。この結果ウエハＷの表面全体を覆うように現像液Ｄの液溜まりが形成される。 Thereafter, the rotation of the wafer W is started, and for example, the rotation speed of 10 rpm is maintained, and the developer nozzle 3 is moved toward the periphery of the wafer W as shown in FIGS. As a result, as shown in FIG. 3B, the pool of the developer D is spread from the center of the wafer W toward the peripheral edge in a state where it is in contact with the contact portion 32 of the developer nozzle 3. Then, after the developer nozzle 3 has moved to the periphery of the wafer W, the supply of the developer D is stopped, and the developer nozzle 3 is retracted to a standby portion outside the cup body 20 (not shown). As a result, a pool of the developer D is formed so as to cover the entire surface of the wafer W.
　その後図４に示すようにウエハＷの回転を停止し、例えば１５～６０秒間静止する。レジスト膜における露光処理が行われた部位は、露光によりレジストが現像液Ｄに対して不溶性となっている。従って現像液Ｄの液溜まりを形成し、ウエハＷに対して液溜まりを静止することにより、レジスト膜における露光されていない可溶部位が現像液Ｄと反応して溶解する。 After that, as shown in FIG. 4, the rotation of the wafer W is stopped and, for example, it is stopped for 15 to 60 seconds. In the portion of the resist film where the exposure process has been performed, the resist is insoluble in the developer D by exposure. Therefore, a liquid pool of the developer D is formed and the liquid pool is made stationary with respect to the wafer W, whereby the unexposed soluble part in the resist film reacts with the developer D and dissolves.
　続いて図５に示すようにウエハＷの回転を開始し、２５００ｒｐｍ以下、例えば２０００ｒｐｍの回転速度を５～２０秒間、例えば１５秒維持する。このときレジスト膜における現像液と反応して溶解した部位は、流動性が高くなっているため、ウエハＷの回転により、ウエハＷの表面に供給された現像液Ｄと共に振り切られて除去される。さらにウエハＷの表面が乾燥し、例えばウエハＷの表面において現像液Ｄによる干渉縞が見えなくなる。 Subsequently, as shown in FIG. 5, the rotation of the wafer W is started, and the rotation speed of 2500 rpm or less, for example, 2000 rpm is maintained for 5 to 20 seconds, for example, 15 seconds. At this time, the part of the resist film dissolved by reacting with the developing solution has high fluidity, and therefore is removed by being shaken off together with the developing solution D supplied to the surface of the wafer W by the rotation of the wafer W. Furthermore, the surface of the wafer W is dried, and for example, interference fringes due to the developer D are not visible on the surface of the wafer W.
　その後リンス液ノズル５をウエハＷの中心に向けて吐出する位置に移動する。次いで図６に示すようにウエハＷの回転速度を５００～１５００ｒｐｍ、例えば１０００ｒｐｍに減速すると共に、ウエハＷの中心に向けて有機溶剤であるリンス液Ｒを供給する。これによりウエハＷの表面にリンス液Ｒの液溜まりが形成され、ウエハＷの周縁に向けて広がって行く。 Thereafter, the rinsing liquid nozzle 5 is moved to a position for discharging toward the center of the wafer W. Next, as shown in FIG. 6, the rotation speed of the wafer W is reduced to 500 to 1500 rpm, for example, 1000 rpm, and a rinsing liquid R as an organic solvent is supplied toward the center of the wafer W. As a result, a pool of the rinse liquid R is formed on the surface of the wafer W and spreads toward the periphery of the wafer W.
　背景技術に示したようにネガ型のレジスト膜においては、露光された領域が現像液Ｄに対して不溶性となるが、現像液（有機系の溶液）Ｄとリンス液（有機溶剤）Ｒとの混合液に対しては、溶解してしまうことがある。この理由は有機系の現像液と有機溶剤とが混ざることにより、各々の液とレジスト膜との間の溶解パラメータの値の差よりも混合液とレジスト液との間の溶解パラメータの値の差の方が小さくなったことに起因していると推定される。上述の実施の形態においては、ウエハＷに現像液Ｄの液溜まりを形成し、現像処理を行った後、ウエハＷを回転させて、現像液Ｄを振り切ると共に、ウエハＷの表面を乾燥させている。そのためその後ウエハＷの表面にリンス液Ｒを供給したときに、現像液Ｄとリンス液Ｒとが混合されない。従って、ウエハＷにリンス液Ｒを供給したときに、レジスト膜の露光された領域が現像液Ｄとリンス液Ｒとの混合液に曝されることがなく、レジスト膜の不溶部分の溶解を防ぐことができる。 As shown in the background art, in the negative resist film, the exposed area becomes insoluble in the developer D, but the developer (organic solution) D and the rinse solution (organic solvent) R The mixed solution may be dissolved. This is because the organic developer and the organic solvent are mixed, so that the difference in the solubility parameter value between the mixed solution and the resist solution is larger than the difference in the solubility parameter value between each solution and the resist film. It is presumed that this is due to the smaller size. In the above-described embodiment, after a liquid pool of the developer D is formed on the wafer W and development processing is performed, the wafer W is rotated to shake off the developer D and dry the surface of the wafer W. Yes. Therefore, when the rinse liquid R is subsequently supplied to the surface of the wafer W, the developer D and the rinse liquid R are not mixed. Therefore, when the rinsing liquid R is supplied to the wafer W, the exposed area of the resist film is not exposed to the mixed liquid of the developing liquid D and the rinsing liquid R, thereby preventing dissolution of the insoluble portion of the resist film. be able to.
　その後図７に示すようにウエハＷの回転速度を２５００ｒｐｍ以下、例えば２０００ｒｐｍに維持し、ウエハＷの表面のリンス液Ｒを振り切ると共に、裏面側洗浄液ノズル２９からウエハＷの裏面に向けて洗浄液を供給する。これにより、ウエハＷの表面においては、リンス液Ｒと共に、溶解したレジスト膜が洗い流されて除去される。更にウエハＷの裏面側も洗浄される。 Thereafter, as shown in FIG. 7, the rotation speed of the wafer W is maintained at 2500 rpm or less, for example, 2000 rpm, the rinse liquid R on the front surface of the wafer W is shaken off, and the cleaning liquid is supplied from the back surface side cleaning liquid nozzle 29 toward the back surface of the wafer W. To do. Thereby, on the surface of the wafer W, along with the rinse liquid R, the dissolved resist film is washed away and removed. Further, the back side of the wafer W is also cleaned.
　上述の実施の形態によれば、露光処理が行われたウエハＷにネガ型の現像液Ｄを供給して、現像処理を行い、次いでウエハＷを回転させて表面の現像液Ｄを振り切って乾燥させた後、リンス液Ｒを供給してウエハＷの表面を洗浄するようにしている。このため現像液Ｄとリンス液Ｒとが混合せず、混合液によるレジスト膜における露光により不溶性となった部分の溶解を抑制することができる。従ってウエハＷに形成される回路パターンの線幅の乱れを抑制することができる。 According to the above-described embodiment, the negative developing solution D is supplied to the wafer W on which the exposure processing has been performed, the developing processing is performed, and then the wafer W is rotated to shake off the surface developing solution D and dry. Then, the rinse liquid R is supplied to clean the surface of the wafer W. For this reason, the developing solution D and the rinsing solution R are not mixed, and dissolution of the portion insoluble in the resist film by the mixed solution can be suppressed. Therefore, the disturbance of the line width of the circuit pattern formed on the wafer W can be suppressed.
　またウエハＷから現像液Ｄを振り切る工程においては、ウエハＷの回転速度を速くすることにより、ウエハＷから現像液を確実に振り切ることができ、乾燥する時間を短くすることができる。しかしながらウエハＷの回転速度が速すぎる場合には、ウエハＷの周縁側において乾燥しすぎてしまい、回路パターンの線幅の均一性が悪くなることがある。そのためウエハＷから現像液Ｄを振り切る工程におけるウエハＷの回転速度は、２５００ｒｐｍ以下であることが好ましい。 Also, in the step of shaking off the developer D from the wafer W, by increasing the rotation speed of the wafer W, the developer can be reliably shaken off from the wafer W, and the drying time can be shortened. However, when the rotation speed of the wafer W is too high, the wafer W is dried too much on the peripheral side, and the line width uniformity of the circuit pattern may deteriorate. Therefore, it is preferable that the rotation speed of the wafer W in the step of shaking off the developer D from the wafer W is 2500 rpm or less.
　また上述の実施の形態は、ウエハＷを回転させて現像液Ｄを振り切る工程において、ウエハＷを回転させると共に、ウエハＷに向けて窒素（Ｎ２）ガスを供給してもよい。このような例としては、例えばウエハＷに向けてＮ２ガスを吐出するガスノズルを現像液ノズル３及びリンス液ノズル５と互いに干渉しない位置に設けた構成が挙げられる。このような現像装置において、ウエハＷの表面に現像液の液溜まりを形成してウエハＷを静止させた後、図８に示すようにガスノズル９０をウエハＷの中心に向けてＮ２ガスを吐出する位置に移動する。 In the above-described embodiment, the wafer W may be rotated and the nitrogen (N 2 ) gas may be supplied toward the wafer W in the process of rotating the wafer W and shaking off the developer D. As such an example, for example, a configuration in which a gas nozzle that discharges N 2 gas toward the wafer W is provided at a position that does not interfere with the developer nozzle 3 and the rinsing liquid nozzle 5 can be given. In such a developing apparatus, after a liquid pool of developer is formed on the surface of the wafer W and the wafer W is stopped, N 2 gas is discharged with the gas nozzle 90 directed toward the center of the wafer W as shown in FIG. Move to the position you want.
　その後ウエハＷに向けてガスノズル９０からＮ２ガスを吐出すると共に、ウエハＷを例えば２５００ｒｐｍの回転速度で、１５秒間回転させる。この場合ガスノズル９０から吐出するガスの吐出位置をウエハＷの中心部に位置させたままであってもよいが、ウエハＷが回転している間にガスノズル９０をスキャンして吐出位置をウエハＷの中心部から周縁部に移動させるようにしてもよい。次いでＮ２ガスの供給を停止した後、ウエハＷのリンス液を供給するようにすればよい。
　ウエハＷを回転させて現像液Ｄを振り切ると共に、Ｎ２ガスを供給してウエハＷの表面を乾燥させることにより、ウエハＷの表面の乾燥を促進することができ、ウエハＷの表面の乾燥の回転時間を短くしたり、ウエハＷの回転速度を遅くすることができる。 Thereafter, N 2 gas is discharged from the gas nozzle 90 toward the wafer W, and the wafer W is rotated for 15 seconds at a rotational speed of, for example, 2500 rpm. In this case, the discharge position of the gas discharged from the gas nozzle 90 may remain at the center of the wafer W. However, while the wafer W is rotating, the gas nozzle 90 is scanned to set the discharge position to the center of the wafer W. You may make it move to a peripheral part from a part. Next, after the supply of N 2 gas is stopped, the rinse liquid for the wafer W may be supplied.
By rotating the wafer W to shake off the developer D and supplying the N 2 gas to dry the surface of the wafer W, drying of the surface of the wafer W can be promoted. The rotation time can be shortened and the rotation speed of the wafer W can be decreased.
　さらに現像装置におけるカップ体２０の上方の天井部に設けられたＦＦＵ（Fun Filter Unit）から、ウエハＷを回転させて現像液Ｄを振り切る工程において、例えば乾燥させた空気をカップ体２０の上方に向けて供給してもよい。このように構成することで、ウエハＷを回転させて現像液Ｄを振り切る工程において、ウエハＷの周囲の雰囲気の湿度を下げることができる。ウエハＷの周囲の雰囲気の湿度が下がることにより、ウエハＷの表面の乾燥がより促進される。
［第２の実施の形態］ Further, in the step of rotating the wafer W from the FFU (Fun Filter Unit) provided on the ceiling portion above the cup body 20 in the developing device, for example, the dried air is fed above the cup body 20. You may supply toward. With this configuration, the humidity of the atmosphere around the wafer W can be lowered in the step of rotating the wafer W and shaking off the developer D. By reducing the humidity of the atmosphere around the wafer W, drying of the surface of the wafer W is further promoted.
[Second Embodiment]
　第２の実施の形態に係る現像装置について説明する。現像装置は、図９に示すように、カップ体６と、現像液ノズル３と、リンス液ノズル５と、純水ノズル８とを備えている。第２の実施の形態に係る現像装置においては、カップ体６は、例えば現像装置が設置される工場の要請に従って、純水の排液及び現像液Ｄ及びリンス液Ｒなどの有機溶媒の排液が互いに混合されないようにカップ体６外へ排出するように構成される。 The developing device according to the second embodiment will be described. As shown in FIG. 9, the developing device includes a cup body 6, a developer nozzle 3, a rinse liquid nozzle 5, and a pure water nozzle 8. In the developing device according to the second embodiment, the cup body 6 is drained of pure water and drained of an organic solvent such as the developer D and the rinsing solution R, for example, according to the request of the factory where the developing device is installed. Are configured to be discharged out of the cup body 6 so as not to be mixed with each other.
　カップ体６は、２つの個別の排液路を形成するための可動カップ６０を備えている。当該可動カップ６０は、スピンチャック１２に載置されたウエハＷ、円形板２２及び山型ガイド部２３の周囲を囲むように設けられている。可動カップ６０は、カップ体６の中心側から周縁に向かって傾斜する円形のリング板６０Ａ、６０Ｂを上下に間隔をおいて重ねて構成されている。下方側のリング板６０Ｂは下方に向かう途中で屈曲され、その下端部は、垂直方向に伸びるように形成された円筒部６０Ｃとなっている。また円筒部６０Ｃの内面における下方よりの位置には、内側に向けて突出した突起６０Ｄが全周に亘って設けられている。なお図９中の７は、可動カップ６０を上昇位置と下降位置との間で昇降させる昇降機構である。 The cup body 6 includes a movable cup 60 for forming two separate drainage paths. The movable cup 60 is provided so as to surround the periphery of the wafer W, the circular plate 22 and the mountain-shaped guide portion 23 placed on the spin chuck 12. The movable cup 60 is configured by stacking circular ring plates 60A and 60B that are inclined from the center side of the cup body 6 toward the peripheral edge thereof with an interval in the vertical direction. The lower ring plate 60B is bent halfway downward, and the lower end portion thereof is a cylindrical portion 60C formed so as to extend in the vertical direction. Further, a protrusion 60D protruding inward is provided over the entire circumference at a position from below in the inner surface of the cylindrical portion 60C. In addition, 7 in FIG. 9 is a raising / lowering mechanism which raises / lowers the movable cup 60 between the raising position and the lowering position.
　カップ体６は、可動カップ６０のさらに外側を囲むように円筒状の外側カップ６３を備えている。外側カップ６３の上端は、中心側に向けて水平に屈曲され、外側カップ６３の下端は、断面が凹部型となるリング状の液受け部６２が形成されている。液受け部６２には各々起立した区画壁６１Ａ、６１Ｂが、外側カップ６３の周縁に向かってこの順に、平面視同心円状に設けられている。そして、区画壁６１Ａ、６１Ｂと外側カップ６３の側壁とによって、３つの円環状の凹部６２Ａ、６２Ｂ、６２Ｃが、外側カップ６３の周縁に向かってこの順に、同心円状に形成されており、凹部６２Ａ、６２Ｂ、６２Ｃの底面には、排気口６４、排液口６５、排液口６６が夫々開口している。そして排液口６５は、有機系の処理液を排液する排液管６７に接続され、排液口６６は、例えば純水などの有機溶媒を含まない排液を排液する排液管６８に接続されている。なお図９中の６９は、排気管である。 The cup body 6 includes a cylindrical outer cup 63 so as to surround the outer side of the movable cup 60. The upper end of the outer cup 63 is bent horizontally toward the center side, and the lower end of the outer cup 63 is formed with a ring-shaped liquid receiving portion 62 whose section is a concave shape. The liquid receiving portion 62 is provided with partition walls 61 </ b> A and 61 </ b> B standing upright and concentrically in this order toward the periphery of the outer cup 63. Then, three annular recesses 62A, 62B, 62C are formed concentrically in this order toward the periphery of the outer cup 63 by the partition walls 61A, 61B and the side wall of the outer cup 63, and the recess 62A , 62B, 62C are respectively provided with an exhaust port 64, a drain port 65, and a drain port 66. The drain port 65 is connected to a drain pipe 67 that drains the organic processing liquid, and the drain port 66 drains a drain that does not contain an organic solvent such as pure water. It is connected to the. In addition, 69 in FIG. 9 is an exhaust pipe.
　図９に示すように可動カップ６０が図９中点線で示す上昇位置に設定されるときは、上側のリング板６０Ａの上端と外側カップ６３の上面とが近接し、下側のリング板６０Ｂの内周縁部の下面が、ウエハＷから飛散する処理液を受けることができるように、当該ウエハＷの表面の上方に位置する。また、可動カップ６０の突起６０Ｄが、区画壁６１Ｂの上方に位置する。そしてウエハＷから有機系の処理液を振り切るときには、可動カップ６０を上昇位置に上昇させる。これによりウエハＷから振り切られた処理液は、可動カップ６０により、受け止められて、凹部６２Ｂに流れ込み、排液口６５から排液される。 As shown in FIG. 9, when the movable cup 60 is set at the raised position indicated by the dotted line in FIG. 9, the upper end of the upper ring plate 60A and the upper surface of the outer cup 63 are close to each other, and the lower ring plate 60B The lower surface of the inner peripheral edge is positioned above the surface of the wafer W so that the processing liquid scattered from the wafer W can be received. Further, the protrusion 60D of the movable cup 60 is located above the partition wall 61B. When the organic processing liquid is shaken off from the wafer W, the movable cup 60 is raised to the raised position. As a result, the processing liquid shaken off from the wafer W is received by the movable cup 60, flows into the recess 62 </ b> B, and is drained from the drain port 65.
　また図９中実線で示すように、可動カップ６０が下降位置にあるときは、円筒部６０Ｃは凹部６２Ｃ内に位置する。また、上側のリング板６０Ａの上端がウエハＷの表面と同じ、または略同じ高さに位置する。そしてウエハＷから有機系の処理液を含まない液を振り切るときには、可動カップ６０を下降位置に下降させる。これによりウエハＷから振り切られた処理液は、可動カップ６０の上方を越えて外側カップ６３に受け止められ、凹部６２Ｃに流れ込み、排液口６６から排液される。
　さらに純水ノズル８は、ウエハＷの表面側に向けて置換流体である純水を吐出できるように構成されている。純水ノズル８は、純水供給管８１を介して純水供給源８０に接続されている。また純水ノズル８は、図示しないアームに保持され、スピンチャック１２に保持されたウエハＷの上方とカップ体６の外部の図示しない待機部との間を移動自在に構成されている。 Further, as indicated by the solid line in FIG. 9, when the movable cup 60 is in the lowered position, the cylindrical portion 60C is located in the recess 62C. Further, the upper end of the upper ring plate 60A is located at the same or substantially the same height as the surface of the wafer W. When the liquid containing no organic processing liquid is shaken off from the wafer W, the movable cup 60 is lowered to the lowered position. As a result, the processing liquid shaken off from the wafer W passes over the movable cup 60 and is received by the outer cup 63, flows into the recess 62 </ b> C, and is drained from the drain port 66.
Further, the pure water nozzle 8 is configured to discharge pure water as a replacement fluid toward the surface side of the wafer W. The pure water nozzle 8 is connected to a pure water supply source 80 via a pure water supply pipe 81. The pure water nozzle 8 is held by an arm (not shown) and is configured to be movable between the upper portion of the wafer W held by the spin chuck 12 and a standby unit (not shown) outside the cup body 6.
　第２の実施の形態においては、まず可動カップ６０を下降位置に位置させて、ウエハＷの表面に現像液Ｄの塗布を行う。そして図４に示すようにウエハＷの表面に現像液Ｄの液溜まりを形成し、ウエハＷを静止させて現像した後、純水ノズル８をウエハＷの中心部に向けて吐出する位置に移動させる。その後ウエハＷの回転を開始し、５００～１５００ｒｐｍ例えば１０００ｒｐｍの回転速度を維持すると共に、ウエハＷの中心に向けて純水Ｐを５～２０秒、例えば１５秒供給する。この時ウエハＷの中心に供給された純水Ｐは、ウエハＷの回転によりウエハＷの中心から周縁に向けて広がる。そのため図１０に示すように現像液Ｄが純水Ｐにより押し流されウエハＷの周縁から振り切られる。この結果ウエハＷの表面の液溜まりが現像液Ｄから純水Ｐに置換される。
　また可動カップ６０の位置については、可動カップ６０を下降位置に設定したまま純水Ｐの供給を開始し、ウエハＷの表面の現像液Ｄが振り切られた後、可動カップ６０を上昇位置に移動させ、ウエハＷから純水Ｐを振り切る。 In the second embodiment, first, the movable cup 60 is positioned at the lowered position, and the developer D is applied to the surface of the wafer W. Then, as shown in FIG. 4, a pool of developer D is formed on the surface of the wafer W, the wafer W is stopped and developed, and then the pure water nozzle 8 is moved to a position for discharging toward the center of the wafer W. Let Thereafter, the rotation of the wafer W is started, the rotation speed of 500 to 1500 rpm, for example, 1000 rpm is maintained, and pure water P is supplied toward the center of the wafer W for 5 to 20 seconds, for example, 15 seconds. At this time, the pure water P supplied to the center of the wafer W spreads from the center of the wafer W toward the periphery by the rotation of the wafer W. Therefore, as shown in FIG. 10, the developer D is swept away by the pure water P and shaken off from the periphery of the wafer W. As a result, the liquid pool on the surface of the wafer W is replaced with the pure water P from the developer D.
As for the position of the movable cup 60, the supply of pure water P is started with the movable cup 60 set at the lowered position, and after the developer D on the surface of the wafer W has been shaken off, the movable cup 60 is moved to the raised position. The pure water P is shaken off from the wafer W.
　そして純水ノズル８をカップ体６の外部に退避させると共に、リンス液ノズル５をウエハＷの中心に向けて吐出する位置に移動させる。その後ウエハＷの回転速度を５００～１５００ｒｐｍ、例えば１０００ｒｐｍに維持し、ウエハＷの中心に向けてリンス液Ｒを供給する。そのため図１１に示すようにウエハＷの中心に供給されたリンス液ＲがウエハＷの中心から徐々に周縁に向けて広がる。これによりウエハＷの表面の純水Ｐが押し流されて、ウエハＷから振り切られ、ウエハＷの表面の液溜まりが純水Ｐからリンス液Ｒに置換される。
　リンス液Ｒの供給開始時においては、可動カップ６０を上昇位置に設定し、ウエハＷの表面の純水Ｐが振り切られた後、可動カップ６０を下降位置に移動させ、ウエハＷからリンス液Ｒを振り切る。その後リンス液Ｒの供給を停止すると共に、ウエハＷを回転させてリンス液Ｒと共にレジスト膜の溶解した部分を振り切って除去する。 Then, the pure water nozzle 8 is retracted to the outside of the cup body 6, and the rinse liquid nozzle 5 is moved to a position for discharging toward the center of the wafer W. Thereafter, the rotation speed of the wafer W is maintained at 500 to 1500 rpm, for example, 1000 rpm, and the rinse liquid R is supplied toward the center of the wafer W. Therefore, as shown in FIG. 11, the rinsing liquid R supplied to the center of the wafer W gradually spreads from the center of the wafer W toward the periphery. As a result, the pure water P on the surface of the wafer W is swept away from the wafer W, and the liquid pool on the surface of the wafer W is replaced with the rinsing liquid R from the pure water P.
At the start of the supply of the rinsing liquid R, the movable cup 60 is set to the ascending position, and after the pure water P on the surface of the wafer W has been shaken off, the movable cup 60 is moved to the descending position. Shake off. Thereafter, the supply of the rinsing liquid R is stopped, and the wafer W is rotated so that the dissolved portion of the resist film together with the rinsing liquid R is shaken off and removed.
　第２の実施の形態に係る現像装置においては、ウエハＷに現像液Ｄを供給した後、現像液Ｄの液溜まりを純水Ｐに置換し、その後リンス液Ｒを供給するようにしている。そのため現像液Ｄとリンス液Ｒとの混合を防ぐことができるため、レジスト膜のパターン部分の溶解を抑制することができる。
　また上述の例では、現像液を置換する置換流体として、純水Ｐを用いたが、例えば界面活性剤を含んだ純水などを用いてもよい。また置換流体として有機溶剤を用いてもよい。置換流体として供給する有機溶剤が、当該有機溶剤と有機系の現像液と混合したときに、各々の液とレジスト膜との間の溶解パラメータの値の差よりも混合液とレジスト液との間の溶解パラメータの値の差が大きくなる有機溶剤であれば、露光後のネガ型現像液に対して不溶解性とした領域の溶解を抑制できるため置換流体として用いることができる。 In the developing device according to the second embodiment, after supplying the developing solution D to the wafer W, the reservoir of the developing solution D is replaced with pure water P, and then the rinsing solution R is supplied. Therefore, since mixing with the developing solution D and the rinse liquid R can be prevented, dissolution of the pattern part of a resist film can be suppressed.
In the above example, pure water P is used as the replacement fluid for replacing the developer. However, pure water containing a surfactant may be used, for example. An organic solvent may be used as the replacement fluid. When the organic solvent supplied as the replacement fluid is mixed with the organic solvent and the organic developer, the difference between the values of the solubility parameters between the respective solutions and the resist film is larger than that between the mixed solution and the resist solution. Any organic solvent in which the difference in the values of the solubility parameters becomes large can be used as a replacement fluid because dissolution of the insoluble region in the negative-type developer after exposure can be suppressed.
　あるいは現像液Ｄを置換する置換流体としてガスを用いてもよい。例えば純水ノズル８に代えてウエハＷの中心に向けてドライエアを供給するガス供給ノズルを設け、ウエハＷの中心から周縁に向かって流れるガス流により現像液Ｄを押し流す。これによりウエハＷの表面の現像液Ｄの液溜まりがドライエアの気相に置換される。このような例では、置換流体として不活性ガスなどを用いてもよい。また置換流体は、蒸気やミストなどであってもよい。なお蒸気はガスに含まれるものとする。 Alternatively, a gas may be used as a replacement fluid for replacing the developer D. For example, instead of the pure water nozzle 8, a gas supply nozzle that supplies dry air toward the center of the wafer W is provided, and the developer D is pushed away by a gas flow that flows from the center of the wafer W toward the periphery. As a result, the liquid reservoir of the developer D on the surface of the wafer W is replaced with a gas phase of dry air. In such an example, an inert gas or the like may be used as the replacement fluid. The replacement fluid may be steam or mist. Steam is included in the gas.
　また本発明は、ウエハＷを静止させた状態で現像液Ｄ、純水Ｐ及びリンス液Ｒを供給する現像装置に適用してもよい。例えば現像液ノズル３、リンス液ノズル５及び純水ノズル８を夫々ウエハＷの径の長さよりも長い範囲に吐出口を設け、各ノズルを吐出口の伸びる方向に対して垂直な方向に水平移動するように、即ちウエハＷの一端から他端までスキャンするように構成してもよい。
　このような現像装置においても現像液Ｄの液溜まりを形成した後、純水Ｐを供給することによりウエハＷ表面の現像液Ｄを除去することができるため、同様の効果が得られる。 The present invention may also be applied to a developing device that supplies the developing solution D, pure water P, and rinsing solution R while the wafer W is stationary. For example, the developing nozzle 3, the rinsing liquid nozzle 5 and the pure water nozzle 8 are each provided with discharge ports in a range longer than the length of the diameter of the wafer W, and each nozzle is moved horizontally in a direction perpendicular to the direction in which the discharge ports extend. In other words, it may be configured to scan from one end of the wafer W to the other end.
Even in such a developing apparatus, the developer D on the surface of the wafer W can be removed by supplying the pure water P after forming the pool of the developer D, and thus the same effect can be obtained.
　また本発明は、レジスト膜における露光した領域が現像液に対して可溶となるポジ型のレジスト膜に対する現像処理であってもよい。このようなレジスト膜においても現像液Ｄとして有機系の現像液Ｄを用い、現像液Ｄと現像処理後のリンス液Ｒとが混合されると、レジスト膜の露光されていない不溶とした部分も溶解してしまうおそれがある。従って、ウエハＷに現像液Ｄを供給した後、現像液Ｄの除去を行った後、リンス液Ｒを供給することで同様の効果を得ることができる。 Further, the present invention may be a developing process for a positive resist film in which an exposed area in the resist film is soluble in a developer. Even in such a resist film, when an organic developer D is used as the developer D and the developer D and the rinse R after the development treatment are mixed, there are also portions of the resist film that are not exposed to insolubility. There is a risk of dissolution. Therefore, after supplying the developing solution D to the wafer W, removing the developing solution D, and then supplying the rinsing solution R, the same effect can be obtained.
　本発明の実施の形態の効果を調べるために以下の試験を行った。第１の実施の形態に示した現像方法において、ウエハＷの表面全体に現像液Ｄの液溜まりを形成した後、ウエハＷを２０００ｒｐｍで５秒間回転させて、現像液Ｄを振り切り、その後リンス液Ｒを５秒間供給した例を実施例とした。またウエハＷの表面全体に現像液Ｄの液溜まりを形成した後、回転させずに、現像液Ｄの液溜まりの上からリンス液Ｒを供給したことを除いて、実施例と同様に処理した例を比較例とした。また現像液Ｄの液溜まりを形成した後、現像液Ｄを振り切り、その後ウエハＷにリンス液Ｒを供給せずに溶解部分を洗い流さなかったことを除いて、実施例と同様に処理した例を参考例とした。 The following tests were conducted to investigate the effects of the embodiment of the present invention. In the developing method shown in the first embodiment, after a liquid pool of the developing solution D is formed on the entire surface of the wafer W, the wafer W is rotated at 2000 rpm for 5 seconds to shake off the developing solution D, and then a rinsing solution An example in which R was supplied for 5 seconds was taken as an example. Further, after forming a liquid pool of the developer D on the entire surface of the wafer W, the same processing as in the example was performed except that the rinse liquid R was supplied from above the liquid pool of the developer D without rotating. The example was used as a comparative example. In addition, after forming the liquid reservoir of the developer D, the developer D was shaken off, and then the wafer W was not supplied with the rinse solution R and the dissolved portion was not washed away. It was set as a reference example.
　実施例、比較例及び参考例のウエハＷの各々において、ＣＤ（Critical Dimension：限界寸法）を測定し、ＣＤＵ（Critical Dimension Uniformity：限界寸法均一性）を算出した。表面が各々チップ領域に対応する大きさの４３７個の矩形領域に分割された評価用のウエハを用い、各矩形領域をマトリックス状に９個に分割した分割領域の中心をＣＤの測定点(測定位置)とした。即ち、各矩形領域ごとに９個の測定点が設定されている。 In each of the wafers W of Examples, Comparative Examples, and Reference Examples, CD (Critical Dimension: critical dimension) was measured, and CDU (Critical Dimension Uniformity) was calculated. An evaluation wafer whose surface is divided into 437 rectangular areas each having a size corresponding to a chip area is used, and the center of each divided area is divided into nine in the form of a matrix and the center of the divided area is measured as a CD measurement point (measurement). Position). That is, nine measurement points are set for each rectangular area.
　各矩形領域の各測定点において、ＣＤを測定し、ウエハＷのＣＤＵを算出した。表１は、参考例、比較例及び実施例の各々のウエハＷにおけるＣＤＵを示す。次のようにして求めた値である。各矩形領域の既述の９個の測定点をＰ１、Ｐ２、…Ｐ９とすると、各矩形領域のＰ１におけるＣＤ値を抽出し、それらＣＤ値の平均値をＰ１のマスク値とする。Ｐ２～Ｐ９についても同様にマスク値を求める。そして各矩形領域ごとにＰ１において測定したＣＤ値（実測値）からＰ１のマスク値ｍ（Ｐ１）を差し引く。Ｐ２～Ｐ９についても同様に、測定したＣＤ値（実測値）から対応する測定点のマスク値を差し引く。こうしてマスク処理後のＣＤ値（実測値からマスク値を差し引いた値）に基づいてＣＤＵを求めている。この計算を機能的に表現すれば、ＣＤの実測データから、露光時のマスクに起因するＣＤ値を差し引くことで、プロセス成分に起因するＣＤ値を求めたということができる。 The CD was measured at each measurement point in each rectangular area, and the CDU of the wafer W was calculated. Table 1 shows CDU in each wafer W of the reference example, the comparative example, and the example. The value obtained as follows. Assuming that the nine measurement points already described in each rectangular area are P1, P2,... P9, the CD value in P1 of each rectangular area is extracted, and the average value of these CD values is used as the mask value of P1. Mask values are similarly obtained for P2 to P9. Then, the mask value m (P1) of P1 is subtracted from the CD value (actually measured value) measured at P1 for each rectangular area. Similarly for P2 to P9, the mask value of the corresponding measurement point is subtracted from the measured CD value (actually measured value). Thus, the CDU is obtained based on the CD value after mask processing (a value obtained by subtracting the mask value from the actual measurement value). If this calculation is expressed functionally, it can be said that the CD value caused by the process component is obtained by subtracting the CD value caused by the mask at the time of exposure from the measured data of CD.
　またインターＣＤＵは各矩形領域ごとにＰ１～Ｐ９の各ＣＤ値の平均値である矩形領域平均値を求め、各矩形領域における矩形領域平均値に基づいて算出したＣＤＵである。さらにイントラＣＤＵは、グローバルＣＤＵの算出時に用いたＣＤ値（実測値からマスク値を差し引いた値）から領域平均値（各矩形領域においてＰ１～Ｐ９に対応するＣＤ値は同じ値（平均値）である）を差し引いたＣＤ値である。 Further, the inter CDU is a CDU obtained by obtaining a rectangular area average value that is an average value of the CD values of P1 to P9 for each rectangular area and calculating based on the rectangular area average value in each rectangular area. Further, the intra CDU has a region average value (the CD value corresponding to P1 to P9 in each rectangular region is the same value (average value)) from the CD value (the value obtained by subtracting the mask value from the actual measurement value) used when calculating the global CDU. CD value obtained by subtracting (A).
［表１］
Figure JPOXMLDOC01-appb-I000001
　参考例においては、グローバルＣＤＵが１．０４、インターＣＤＵが０．７０、イントラＣＤＵが０．７８であったが、比較例においては、グローバルＣＤＵが１．１１、インターＣＤＵが０．７２、イントラＣＤＵが０．８５であった。これに対して実施例においては、グローバルＣＤＵが１．０４、インターＣＤＵが０．６９、イントラＣＤＵが０．７８であった。 [Table 1]
Figure JPOXMLDOC01-appb-I000001
In the reference example, the global CDU was 1.04, the inter CDU was 0.70, and the intra CDU was 0.78. However, in the comparative example, the global CDU was 1.11, the inter CDU was 0.72, and the intra CDU was 0.72. The CDU was 0.85. In contrast, in the example, the global CDU was 1.04, the inter CDU was 0.69, and the intra CDU was 0.78.
　この結果によれば、参考例に比べて比較例では、ＣＤＵが大きくなっており、現像液Ｄを供給した後、現像液Ｄを振り切る工程を行わずにリンス液Ｒを供給することにより、ＣＤの面内均一性が悪くなると言える。
　また実施例は、比較例に比べてＣＤＵが小さくなっている。従って現像液Ｄを供給した後、現像液Ｄを振り切る工程を行わずにリンス液Ｒを供給する場合に比べて、現像液Ｄを振り切る工程を行った後、リンス液Ｒを供給することで、リンス液を供給しない場合と同等のＣＤが得られており、ＣＤの面内均一性が良好になると言える。 According to this result, the CDU is larger in the comparative example than in the reference example, and after supplying the developing solution D, the rinse solution R is supplied without performing the step of shaking off the developing solution D. It can be said that the in-plane uniformity becomes worse.
In addition, the example has a smaller CDU than the comparative example. Therefore, after supplying the developing solution D, supplying the rinsing solution R after performing the step of shaking off the developing solution D compared to the case of supplying the rinsing solution R without performing the step of shaking off the developing solution D. A CD equivalent to that obtained when no rinse solution is supplied is obtained, and it can be said that the in-plane uniformity of the CD is improved.
３　　　　　　　　　　現像液ノズル
５　　　　　　　　　　リンス液ノズル
８　　　　　　　　　　純水ノズル
１２　　　　　　　　　スピンチャック
１３　　　　　　　　　回転機構
１００　　　　　　　　制御部
Ｄ　　　　　　　　　　現像液
Ｐ　　　　　　　　　　純水
Ｒ　　　　　　　　　　リンス液
Ｗ　　　　　　　　　　ウエハ
 

  3 Developer Nozzle 5 Rinse Solution Nozzle 8 Pure Water Nozzle 12 Spin Chuck 13 Rotating Mechanism 100 Control Unit D Developer P Pure Water R Rinse Solution W Wafer

Claims (12)

  1. 　表面にレジストが塗布され、露光された後の基板に有機系の現像液を供給して現像処理を行う現像方法において、
    　露光された後の基板を水平に保持する工程と、
    　続いて基板の表面に前記現像液を供給する工程と、
    　次いで基板の表面の現像液を除去する工程と、
    　その後基板の表面に、基板を洗浄する有機溶剤からなる洗浄液を供給する工程と、を含むことを特徴とする現像方法。     In a development method in which a resist is applied to the surface and an organic developer is supplied to the exposed substrate to perform development processing.
    Holding the exposed substrate horizontally; and
    Subsequently, supplying the developer to the surface of the substrate;
    Next, removing the developer on the surface of the substrate;
    And thereafter supplying a cleaning liquid comprising an organic solvent for cleaning the substrate to the surface of the substrate.
  2. 　前記現像液を除去する工程は、水平に保持した基板を鉛直軸周りに回転させて現像液を振り切って、基板の表面を乾燥させることを特徴とする請求項１に記載の現像方法。 2. The developing method according to claim 1, wherein in the step of removing the developer, the surface of the substrate is dried by rotating the substrate held horizontally around the vertical axis to shake off the developer.
  3. 　前記現像液を除去する工程は、基板に置換流体を供給して現像液の液溜まりを置換流体に置換することを特徴とする請求項１に記載の現像方法。 2. The developing method according to claim 1, wherein in the step of removing the developer, a replacement fluid is supplied to the substrate to replace a liquid pool of the developer with a replacement fluid.
  4. 　前記置換流体は、置換液であることを特徴とする請求項３に記載の現像方法。 4. The developing method according to claim 3, wherein the replacement fluid is a replacement liquid.
  5. 　前記置換流体は、気体またはミストであることを特徴とする請求項３に記載の現像方法。 4. The developing method according to claim 3, wherein the replacement fluid is gas or mist.
  6. 　前記レジスト膜は、露光領域が有機現像液に対して不溶解性となるネガ型レジスト膜であることを特徴とする請求項１に記載の現像方法。 2. The developing method according to claim 1, wherein the resist film is a negative resist film in which an exposed region is insoluble in an organic developer.
  7. 　表面にレジストが塗布され、露光された後の基板に有機現像処理を行う現像装置において、
    　基板を水平に保持する基板保持部と、
    　基板保持部を鉛直軸周りに回転させる回転機構と、
    　基板の表面に有機系の現像液を供給する現像液供給部と、
    　基板の表面に、基板を洗浄する有機溶剤からなる洗浄液を供給する洗浄液供給部と、
    　基板の表面の現像液を除去する除去機構と、
    　水平に保持した基板の表面に現像液を供給するステップと、次いで除去機構により、基板の表面の現像液を除去するステップと、その後基板の表面に洗浄液を供給するステップとを実行する制御部と、を備えたことを特徴とする現像装置。     In a developing device that performs organic development processing on a substrate after a resist is applied to the surface and exposed,
    A substrate holder for horizontally holding the substrate;
    A rotation mechanism for rotating the substrate holder around the vertical axis;
    A developer supply unit for supplying an organic developer to the surface of the substrate;
    A cleaning liquid supply unit for supplying a cleaning liquid made of an organic solvent for cleaning the substrate to the surface of the substrate;
    A removal mechanism for removing the developer on the surface of the substrate;
    A controller that executes a step of supplying a developer to the surface of the substrate held horizontally, a step of removing the developer on the surface of the substrate by a removal mechanism, and a step of supplying a cleaning solution to the surface of the substrate thereafter. And a developing device.
  8. 　前記除去機構は、基板保持部を鉛直軸周りに回転させる回転機構であり、基板の表面の現像液を除去するステップは、基板を鉛直軸周りに回転させて、現像液を振り切って、基板の表面を乾燥させるステップであることを特徴とする請求項７に記載の現像装置。 The removing mechanism is a rotating mechanism that rotates the substrate holding unit around the vertical axis, and the step of removing the developer on the surface of the substrate rotates the substrate around the vertical axis, shakes off the developer, 8. The developing device according to claim 7, wherein the developing device is a step of drying the surface.
  9. 　前記除去機構は、基板の表面に置換流体を供給する置換流体供給部であり、基板の表面の現像液を除去するステップは、基板に置換流体を供給して現像液の液溜まりを置換流体に置換するステップであることを特徴とする請求項７に記載の現像装置。 The removal mechanism is a replacement fluid supply unit that supplies a replacement fluid to the surface of the substrate, and the step of removing the developer on the surface of the substrate supplies the replacement fluid to the substrate and turns the developer pool into the replacement fluid. The developing device according to claim 7, wherein the developing device is a replacing step.
  10. 　前記置換流体は、置換液であることを特徴とする請求項９に記載の現像装置。 The developing device according to claim 9, wherein the replacement fluid is a replacement liquid.
  11. 　前記置換流体は、気体またはミストであることを特徴とする請求項９に記載の現像装置。 10. The developing device according to claim 9, wherein the replacement fluid is a gas or a mist.
  12. 　表面にレジストが塗布され、露光された後の基板に有機現像処理を行う現像装置に用いられるコンピュータプログラムを記憶した記憶媒体であって、
    　前記コンピュータプログラムは、請求項１に記載の現像方法を実行するようにステップ群が組まれていることを特徴とする記憶媒体。
     

          A storage medium storing a computer program used in a developing device that performs organic development processing on a substrate after a resist is coated on the surface and exposed,
    A storage medium, wherein the computer program includes a group of steps so as to execute the developing method according to claim 1.


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