TW201802875A - Development method, development device, and storage medium - Google Patents

Abstract

The invention provides a technique that suppresses variation in the line width following development when a developer solution is used to develop an exposed wafer. A negative developer solution D is supplied to a wafer W that has been subjected to exposure processing, developing is performed, and after the wafer W has then been dried by spinning so as to fling off the developer solution D from the surface, or after pure water P has been supplied to the surface of the wafer W to replace any developer solution D that has pooled on the surface with the pure water P, a rinsing liquid R is supplied to clean the surface of the wafer W. Consequently, the developer solution D and the rinsing liquid R do not mix, meaning dissolution by the mixed liquid of parts of the resist film that have been rendered insoluble by the exposure can be suppressed. Accordingly, variation in the line width of the circuit pattern formed on the wafer W can be suppressed.

Description

Developing method, developing device and recording medium

The present invention relates to a technology for performing a development process on a substrate subjected to an exposure process.

In the photolithography process in the manufacture of semiconductor devices, a photoresist film is first formed, and a developing solution is supplied to a substrate exposed along a predetermined pattern to form a photoresist pattern. For example, it is described in Patent Document 1 that a developer is released from a developer nozzle toward a semiconductor wafer (hereinafter referred to as a "wafer") held horizontally, and a droplet is formed on the surface of the wafer W; The movement of the nozzle and the rotation of the wafer W cause the droplets to spread on the wafer W, thereby performing development processing.

The development process includes a positive type development process and a negative type development process; the positive type development process is performed by exposing a substrate coated with a positive type photoresist solution, and making the exposed area soluble with respect to the positive type development solution, The exposed part is removed to generate a pattern. The negative development process is to expose the substrate coated with a negative photoresist solution, and to make the exposed part insoluble with respect to the negative developing solution and dissolve. The unexposed areas are removed, thereby generating a pattern.

For example, as disclosed in Patent Document 2, in a negative-type development process, a polar solvent and a hydrocarbon-based solvent such as an acetone-based solvent, an ester-based solvent, an alcohol-based solvent, an amidine-based solvent, and an ether-based solvent are used as a negative-type developing solution. . Then, a negative developing solution is supplied to the wafer to dissolve the photoresist film. After that, as a countermeasure against defects in the manufacturing process, the wafer is rinsed after the development process, so that the dissolved portion of the photoresist film is washed away with the negative developing solution. As such a washing solution, an organic solvent such as a washing solution containing an organic solvent such as 4-methyl-2-pentanol is used; however, once a negative developing solution is mixed with a washing solution composed of an organic solvent, it may sometimes be caused by Mixed liquid, so that the areas that were originally insoluble to the negative developer after the exposure also dissolved. In recent years, circuit patterns formed on wafers have been gradually miniaturized, and the uniformity of CD (Critical Dimension, critical dimension) as the pattern line width is sought; however, the areas that were originally insoluble also dissolve, resulting in CD instability. Uniformity or deterioration of the LER (Line Edge Roughness) may cause problems. [Habitual technical literature] [patent literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2016-29703 [Patent Document 2] Japanese Patent Laid-Open No. 2012-191168

[Problems to be Solved by the Invention] The present invention was developed in view of such a problem, and the purpose of the present invention is to provide a technique for suppressing the development line when an exposed substrate is developed by an organic developer. Uneven width. [Technical means to solve the problem]

The developing method of the present invention is to supply an organic developing solution to a substrate coated with a photoresist and exposed after the surface to perform a developing process. The developing method includes the following steps: The exposed substrate is maintained at a horizontal level. Steps; Next, a step of supplying the developing solution to the surface of the substrate; Next, a step of removing the developing solution on the surface of the substrate; and thereafter, a step of supplying a cleaning solution to the surface of the substrate, the cleaning solution being washed by washing The substrate is composed of an organic solvent.

The developing device of the present invention is an organic developing process for a substrate coated with photoresist on the surface and exposed to light; the developing device includes: a substrate holding portion that holds the substrate horizontally; a rotating mechanism that vertically rotates the substrate holding portion The shaft rotates; the developer supply unit supplies an organic developer to the surface of the substrate; the cleaning solution supply unit supplies a cleaning solution to the surface of the substrate; the cleaning solution is composed of an organic solvent for cleaning the substrate; A mechanism to remove the developer on the surface of the substrate; and a control unit to perform the following steps; a step of supplying a developer to the surface of the substrate held horizontally; and a step of removing the developer on the surface of the substrate by a removing mechanism; And a step of supplying a cleaning solution to the surface of the substrate thereafter.

The recording medium of the present invention records a computer program for a developing device that performs organic development processing on a substrate coated with a photoresist on the surface and exposed to light; the computer program is programmed with a step group to execute the above The development method. [Effect of the invention]

In the present invention, an organic developing solution is supplied to a substrate subjected to an exposure process, and a developing process is performed. After the developing solution on the substrate surface is removed, an organic solvent is supplied to clean the surface of the substrate. Since the developing solution and the organic solvent are not mixed, it is possible to prevent the insoluble portion of the photoresist film from being dissolved by the mixed solution. Therefore, uneven line widths of the circuit patterns formed on the substrate can be suppressed.

A developing device for executing a developing method according to an embodiment of the present invention will be described. The developing device shown in FIG. 1 includes a spin chuck 12 as a substrate holding portion. The rotary chuck 12 is adapted to attract the central portion of the back surface of the wafer W as a substrate and to hold it on the horizontal wafer W. The rotary chuck 12 is configured to be rotatable around a vertical axis by a rotation mechanism 13 via a rotation shaft 131.

A circular plate 22 is provided below the rotary chuck 12 so as to surround the rotary shaft 131 with a gap therebetween. In addition, three circular through holes 22A are formed in the circular plate 22 in the circumferential direction, and lifting and ejecting pins 14 are provided in each of the through holes 22A. Below these lifting and ejecting pins 14, a common lifting plate 18 is provided; and the lifting and ejecting pins 14 are configured to be able to be lifted and lowered freely by the lifting and lowering mechanism 15 provided below the lifting and lowering plate 18.

A cup 20 is provided so as to surround the rotary chuck 12. The cup body 20 receives discharge liquid that is scattered or splashed from the rotating wafer W, and discharges the discharge liquid to the outside of the developing device. The cup body 20 has a mountain-shaped guide portion 23 with a cross-sectional shape of a mountain shape and a ring shape around the circular plate 22, and a ring-shaped ring extending downward is provided on the outer peripheral edge of the mountain shape guide portion 23. Of vertical walls 27. The mountain-shaped guide portion 23 guides the liquid splashed from the wafer W to below the outside of the wafer W.

Furthermore, a cylindrical upper-side guide portion 28 is provided, which is configured to surround the outer side of the mountain-shaped guide portion 23, and the upper edge extends obliquely toward the inside and upward. The upper guide portion 28 is configured to be raised and lowered by the lifting mechanism 21, and is moved between the developer nozzle 3 and the washing solution nozzle 5 described above above the wafer W, or between the rotary chuck 12 and an external transfer arm. When the wafer W is transferred, it is lowered to the lowered position shown by the solid line in FIG. 1. Then, when the wafer W is rotated and the processing liquid is thrown away from the surface of the wafer W, it rises to the raised position shown by the dotted line in FIG. 1. Below the upper guide portion 28, the mountain-shaped guide portion 23, and the vertical wall 27, a ring-shaped liquid receiving portion 24 having a concave cross section is provided. The liquid receiving portion 24 is connected to a liquid discharge path 25 on the outer peripheral side. Further, an exhaust pipe 26 is provided in the liquid receiving portion 24 on the inner peripheral side than the liquid discharge path 25 so as to extend downward.

The developing device includes a developing solution nozzle 3 for applying a developing solution to the wafer W. As shown in FIG. 2, the developer nozzle 3 is, for example, a lower end of a cylindrical body portion 30, and has a contact portion 32 which is formed smaller than the surface of the wafer W and is disposed to face the surface of the wafer W. A release port 31 is provided at the center of the bottom surface of the contact portion 32 to release the developing solution. The discharge port 31 is formed at the downstream end portion of the developer supply path 33, and the developer supply path 33 is formed inside the main body portion 30 and the contact portion 32. The developer nozzle 3 is held by the arm body 41 and moves between a processing position where the developer is supplied to the wafer W held by the spin chuck 12 and a standby position (not shown) provided outside the cup body 20.

The upstream end of the developer supply path 33 is connected to one end of the developer supply pipe 36; and the other end of the developer supply pipe 36 is connected to a developer supply source 361 for supplying the developer D. Here, Examples are organic developer solutions such as butyl acetate used to develop negative photoresist. The developer supply source 361 includes a pump, a valve, and the like, and is configured to supply the developer D to the developer nozzle 3 by a control signal from a control unit 100 described later.

Further, the developing device is provided with a washing liquid nozzle 5 for supplying a washing liquid (rinsing liquid) of an organic solvent such as 4-methyl-2-pentanol to the wafer W after the developing process. The rinsing liquid nozzle 5 is configured to supply a rinsing liquid toward the wafer W from above, and is connected to a rinsing liquid supply source 50 via a rinsing liquid supply pipe 51. In addition, the rinse liquid nozzle 5 is held by an arm (not shown), and a processing position for supplying a rinse liquid to the wafer W held by the spin chuck 12 and an unillustrated one provided outside the cup body 20. Move between standby positions. The developing device includes a back-side cleaning liquid nozzle 29 for supplying a cleaning liquid to the back surface of the wafer W held by the wafer W. The rear-side cleaning liquid nozzle 29 is connected to a cleaning liquid supply unit (not shown), and the rear surface of the wafer W that is rotated when the rinse liquid is thrown off is supplied with a cleaning liquid such as pure water to clean the wafer W. The back.

In addition, the developing device includes a control unit 100 constituted by a computer. In the control section 100, a program is installed, and the program is stored in a recording medium such as a floppy disk, an optical disk, a hard disk, an MO (magneto-optical disk), and a memory card. The installed program is programmed with instructions (each step), so as to transmit control signals to each part of the developing device to control its operation.

Next, the operation of the developing device according to the first embodiment will be described. For example, on the wafer W, a film of "a negative photoresist film (hereinafter referred to as a" photoresist film ") in which the exposed area is insoluble with respect to the developer system) is formed, and the wafer W is subjected to an exposure device. Exposure processing for transferring circuit patterns. The wafer W that has undergone the exposure process is transferred to the rotary chuck 12 by a coordinated action of an external transfer arm (not shown) and the lifting and ejecting pins 14. Next, the developer nozzle 3 is moved from the standby position to above the center portion of the wafer W, and is lowered so that the contact portion 32 approaches the wafer W and faces each other. As described above, the developing solution D is released from the discharge port 31 to the wafer W in a state where the contact portion 32 is close to the wafer W, and the state contacting the contact portion 32 is formed below the developing solution nozzle 3. Droplets.

After that, the rotation of the wafer W is started; while maintaining a rotation speed of, for example, 10 rpm, the developer nozzle 3 is moved toward the periphery of the wafer W as shown in FIGS. 3 (a) and 3 (b). As a result, as shown in FIG. 3 (b), the droplets of the developer D will spread from the center of the wafer W toward the peripheral edge portion while being in contact with the contact portion 32 of the developer nozzle 3. Then, after the developing solution nozzle 3 moves to the periphery of the wafer W, the supply of the developing solution D is stopped, and the developing solution nozzle 3 retreats to the standby portion outside the cup 20 (not shown). As a result, droplets of the developer D covering the entire surface of the wafer W are formed.

Thereafter, as shown in FIG. 4, the rotation of the wafer W is stopped, and for example, the wafer W is stopped for 15 to 60 seconds. In the photoresist film, the exposed part of the photoresist film will cause the photoresist to become insoluble with respect to the developer D system due to exposure. Therefore, by forming droplets of the developing solution D and making the droplets stationary with respect to the wafer W, the unexposed soluble portion in the photoresist film reacts with the developing solution D to be dissolved.

Next, as shown in FIG. 5, the rotation of the wafer W is started; and a rotation speed below 2500 rpm, for example, 2000 rpm, is maintained for 5 to 20 seconds, for example, 15 seconds. At this time, the part of the photoresist film that is dissolved by reacting with the developing solution has higher fluidity. Therefore, by the rotation of the wafer W, the developing solution D supplied to the surface of the wafer W is thrown away together. And removed. Furthermore, the surface of the wafer W is dried, and for example, on the surface of the wafer W, the interference fringes caused by the developing solution D will gradually disappear.

Thereafter, the rinse liquid nozzle 5 is moved to a position where it is released toward the center of the wafer W. Next, as shown in FIG. 6, the rotation speed of the wafer W is decelerated to 500 to 1500 rpm, for example, 1000 rpm; at the same time, a rinse liquid R made of an organic solvent is supplied toward the center of the wafer W. As a result, droplets of the rinse liquid R are formed on the surface of the wafer W, and the droplets are gradually diffused toward the periphery of the wafer W.

As described in the prior art, in a negative type photoresist film, the exposed area will be insoluble with respect to the developing solution D, but sometimes with respect to the developing solution (organic solution) D and the developing solution (organic solvent) R The mixed solution will dissolve. The reason is speculated that the difference between the solubility parameter 混合 between the mixed solution and the photoresist solution becomes smaller than the difference in the solubility parameter 个别 between the individual liquid and the photoresist film due to the mixing of the organic developer with the organic solvent. In the above embodiment, the droplets of the developing solution D are formed on the wafer W, and after the developing process is performed, the wafer W is rotated, while the developing solution D is thrown away, and the surface of the wafer W is dried. Therefore, when the rinse liquid R is supplied to the surface of the wafer W later, the developer D and the rinse liquid R are not mixed. Therefore, when the rinse solution R is supplied to the wafer W, the exposed area of the photoresist film is not exposed to the mixed solution of the developer solution D and the rinse solution R, and the insoluble portion of the photoresist film can be prevented from dissolving.

Thereafter, as shown in FIG. 7, the rotation speed of the wafer W is maintained below 2500 rpm, for example, 2000 rpm, and the washing liquid R on the surface of the wafer W is thrown away, while the cleaning liquid nozzle 29 from the back side is directed toward the back of the wafer W Supply the cleaning solution. Thereby, on the surface of the wafer W, the dissolved photoresist film is washed away with the rinse solution R and removed. Furthermore, the back side of the wafer W is also cleaned.

According to the above-mentioned embodiment, the negative-type developer solution D is supplied to the wafer W that has been subjected to the exposure process to perform the development process. Then, the wafer W is rotated to dry the developer solution D on the surface and then supplied. The rinse liquid R cleans the surface of the wafer W. Therefore, the developing solution D and the washing solution R are not mixed, so that the situation in which the insoluble portion of the photoresist film becomes insoluble upon exposure to the mixed solution can be suppressed. Therefore, it is possible to suppress the uneven line width of the circuit pattern formed on the wafer W.

Furthermore, in the step of “removing the developing solution D from the wafer W”, by increasing the rotation speed of the wafer W, the developing solution can be reliably removed from the wafer W to shorten the drying time. However, if the rotation speed of the wafer W is too fast, the peripheral edge side of the wafer W may be excessively dried, and the uniformity of the line width of the circuit pattern may be reduced. Therefore, in the step of “removing the developer D from the wafer W”, the rotation speed of the wafer W is preferably 2500 rpm or less.

Furthermore, in the above embodiment, in the step of rotating the wafer W to shake off the developer D, nitrogen (N ₂ ) may be supplied to the wafer W while rotating the wafer W. As such an example, there may be provided a structure in which, for example, a gas nozzle that releases N ₂ gas toward the wafer W is provided at a position that does not interfere with the developing solution nozzle 3 and the washing solution nozzle 5. In such a developing device, after a droplet of a developing solution is formed on the surface of the wafer W and the wafer W is stationary, as shown in FIG. 8, the gas nozzle 90 is moved to release the N ₂ gas toward the center of the wafer W s position.

Thereafter, while the N ₂ gas is released from the gas nozzle 90 toward the wafer W, the wafer W is rotated at a rotation speed of, for example, 2500 rpm for 15 seconds. In this case, although the release position of the gas released from the gas nozzle 90 may still be located at the center of the wafer W, it may also be that the gas nozzle 90 is scanned during the rotation of the wafer W , So that the release position is moved from the center portion to the peripheral portion of the wafer W. Then, after the supply of the N ₂ gas is stopped, the flushing liquid for the wafer W may be supplied again. By rotating the wafer W to shake off the developer D, and simultaneously supplying N ₂ gas to dry the surface of the wafer W, the drying of the surface of the wafer W can be promoted, and the rotation time for drying the surface of the wafer W can be shortened Or slow down the rotation speed of the wafer W.

Furthermore, in the step of rotating the wafer W to shake off the developer D, the FFU (Fan Filter Unit) provided on the top plate portion above the cup 20 in the developing device is directed toward the cup 20 Above, for example, dry air is supplied. With such a structure, the humidity of the ambient gas around the wafer W can be reduced in the step of rotating the wafer W to shake off the developer D. By reducing the humidity of the ambient gas around the wafer W, the drying of the surface of the wafer W is further promoted. [Second Embodiment]

The developing device of the second embodiment will be described. As shown in FIG. 9, the developing device includes a cup body 6, a developing solution nozzle 3, a washing solution nozzle 5, and a pure water nozzle 8. In the developing device of the second embodiment, for example, the cup body 6 is constituted as a drain of pure water and a drain of organic solvents such as a developer D and a rinse solution R due to the needs of the factory where the developing device is installed. They are not mixed with each other when they are discharged outside the cup 6.

The cup body 6 includes a movable cup 60 for forming two individual drainage paths. The movable cup 60 is provided to surround the wafer W mounted on the rotary chuck 12, the circular plate 22, and the mountain guide 23. The movable cup 60 is formed by overlapping circular ring-shaped plates 60A and 60B with an interval therebetween. The ring-shaped plates 60A and 60B are inclined from the center of the cup body 6 toward the periphery. The ring-shaped plate 60B on the lower side is bent midway downward, and a lower end portion thereof constitutes a cylindrical portion 60C extending in a vertical direction. Further, at a position deviated downward from the inner surface of the cylindrical portion 60C, a protrusion 60D protruding toward the inside is provided across the entire circle. 7 in FIG. 9 is a lifting mechanism for moving the movable cup 60 between a raised position and a lowered position.

The cup body 6 includes a cylindrical outer cup 63 that surrounds the outer side of the movable cup 60. The upper end of the outer cup 63 is bent in the horizontal direction toward the center side, and the lower end of the outer cup 63 is formed with a ring-shaped liquid receiving portion 62 having a concave shape in cross section. In the liquid receiving portion 62, in a plan view, partition walls 61A and 61B are sequentially provided in a concentric circle toward the peripheral edge of the outer cup 63, respectively. Then, by dividing the walls 61A, 61B and the side walls of the outer cup 63, three annular recesses 62A, 62B, 62C are sequentially formed concentrically toward the peripheral edge of the outer cup 63; the recesses 62A, 62B, The bottom surface of 62C is respectively opened with an exhaust port 64, a drain port 65, and a drain port 66. Then, the liquid discharge port 65 is connected to a liquid discharge pipe 67 for discharging the organic-based processing liquid, and the liquid discharge port 66 is connected to a liquid discharge pipe 68 for discharging a liquid containing no organic solvent such as pure water. Reference numeral 69 in FIG. 9 denotes an exhaust pipe.

As shown in FIG. 9, when the movable cup 60 is set to the raised position shown by the dotted line in FIG. 9, the upper end of the upper ring plate 60A will be close to the top surface of the outer cup 63 and the lower ring plate 60B The bottom surface of the inner peripheral edge portion is located above the surface of the wafer W, and can receive the processing liquid scattered from the wafer W. Moreover, the protrusion 60D of the movable cup 60 is located above the partition wall 61B. Then, when the organic-based processing liquid is shaken from the wafer W, the movable cup 60 is raised to the raised position. Thereby, the processing liquid thrown off from the wafer W is received by the movable cup 60, flows into the concave portion 62B, and is discharged through the liquid discharge port 65.

Further, as shown by the solid line in FIG. 9, when the movable cup 60 is located at the lowered position, the cylindrical portion 60C is located within the concave portion 62C. In addition, the upper end of the upper annular plate 60A is positioned at the same height as the surface of the wafer W, or at substantially the same height. When the liquid containing no organic-based processing liquid is shaken off by the wafer W, the movable cup 60 is lowered to the lowered position. Thereby, the processing liquid thrown off by the wafer W will fly over the movable cup 60 and be received by the outer cup 63, flow into the recessed portion 62C, and then be discharged from the liquid discharge port 66. Further, the pure water nozzle 8 is configured to release pure water as a replacement fluid toward the surface side of the wafer W. The pure water nozzle 8 is connected to a pure water supply source 80 via a pure water supply pipe 81. The pure water nozzle 8 is held by an arm (not shown), and is configured between the wafer W held by the spin chuck 12 and a standby portion (not shown) outside the cup 6. Move freely.

In the second embodiment, first, the movable cup 60 is positioned at the lowered position, and the surface of the wafer W is coated with the developer D. Then, as shown in FIG. 4, a droplet of the developing solution D is formed on the surface of the wafer W. After the wafer W is stopped and developed, the pure water nozzle 8 is moved to release the center portion of the wafer W. s position. Thereafter, the rotation of the wafer W is started, and a rotation speed of 500 to 1500 rpm is maintained, for example, 1000 rpm, while pure water P is supplied toward the center of the wafer W for 5 to 20 seconds, for example, 15 seconds. At this time, the pure water P supplied to the center of the wafer W will spread from the center of the wafer W toward the periphery due to the rotation of the wafer W. Therefore, as shown in FIG. 10, the developer D is washed away by the pure water P, and is thrown away from the periphery of the wafer W. As a result, the droplets on the surface of the wafer W are replaced from the developer D with pure water P. Regarding the position of the movable cup 60, the supply of pure water P was started while the movable cup 60 was set to the lowered position, and the developing solution D on the surface of the wafer W was shaken, and then the movable cup 60 was moved. When it reaches the raised position, pure water P is thrown away from the wafer W.

Then, the pure water nozzle 8 is retracted to the outside of the cup body 6 and at the same time, the rinse liquid nozzle 5 is moved to a position released toward the center of the wafer W. Thereafter, the rotation speed of the wafer W is maintained at 500 to 1500 rpm, for example, 1000 rpm, and the rinse liquid R is supplied toward the center of the wafer W. Therefore, as shown in FIG. 11, the rinse liquid R supplied to the center of the wafer W will gradually diffuse from the center of the wafer W toward the periphery. As a result, the pure water P on the surface of the wafer W is washed away, and the wafer W is thrown away, so that the liquid droplets on the surface of the wafer W are replaced by the pure water P by the rinse solution R. When the supply of the flushing liquid R is started, the movable cup 60 is set to the raised position; after the pure water P on the surface of the wafer W is shaken, the movable cup 60 is moved to the lowered position, and then shaken from the wafer W Discard rinse solution R. Thereafter, the supply of the rinse liquid R is stopped, and the wafer W is rotated, so that the dissolved portion of the photoresist film and the rinse liquid R are thrown away and removed together.

In the developing device of the second embodiment, after the developer D is supplied to the wafer W, the droplets of the developer D are replaced with pure water P, and then the rinse liquid R is supplied. Since the mixing of the developing solution D and the developing solution R can be prevented in this way, the pattern portion of the photoresist film can be suppressed from being dissolved. Furthermore, in the above examples, pure water P was used as the replacement fluid for replacing the developer, but, for example, pure water containing a surfactant may be used. Further, as the replacement fluid, an organic solvent may be used. The organic solvent supplied as the replacement fluid, when the organic solvent is mixed with the organic developer, as long as the difference in solubility parameter 値 between the mixed solution and the photoresist is greater than the solubility parameter between the individual liquid and the photoresist film The organic solvent with a difference of 値 can be used as a replacement fluid to suppress the dissolution of areas that should be insoluble with respect to the negative developing solution after exposure.

Alternatively, as the replacement fluid for replacing the developer D, a gas may be used. For example, a gas supply nozzle for supplying dry air to the center of the wafer W is provided instead of the pure water nozzle 8; and the developing solution D is blown away by an air flow flowing from the center of the wafer W toward the periphery. As a result, the droplets of the developer D on the surface of the wafer W are replaced with a gas phase of dry air. In such an example, an inert gas or the like can also be used as a replacement fluid. Furthermore, the replacement fluid may be steam or water mist or the like. Also, vapor is regarded as a kind of gas.

Furthermore, the present invention can also be applied to a developing device that supplies the developer D, the pure water P, and the rinse solution R while the wafer W is stationary. For example, the developing solution nozzle 3, the washing solution nozzle 5, and the pure water nozzle 8 may be configured so that the discharge port is provided in a range longer than the length of the diameter of the wafer W, and extended to each nozzle discharge port. The direction moves horizontally in the vertical direction, that is, scanning from one end of the wafer W to the other end. Also in such a developing device, the developer D can be removed from the surface of the wafer W by supplying pure water P after the droplets of the developer D are formed, so that the same effect can be obtained.

Furthermore, the present invention can also be a development process of a positive type photoresist film in which the exposed areas in the photoresist film are soluble to the developing solution. Even in such a photoresist film, an organic developer D is used as the developer D. Once the developer D is mixed with the developing solution R, the unexposed portion of the photoresist film is an insoluble portion. There is also the possibility of dissolution. Therefore, after the developer D is supplied to the wafer W, the developer D is removed, and then the rinse liquid R is supplied, and the same effect as that obtained can be obtained. [Example]

In order to investigate the effect of the embodiment of the present invention, the following tests were performed. Take the following example as an example: In the developing method shown in the first embodiment, after a droplet of the developing solution D is formed on the entire surface of the wafer W, the wafer W is rotated at 2000 rpm for 5 seconds, and the developing solution is thrown away. D, and then supply the rinse solution R for 5 seconds. In addition, the following example is used as a comparative example. Except that the droplets of the developer D are formed on the entire surface of the wafer W, the rinse liquid R is supplied from above the droplets of the developer D without being rotated. All are processed in the same manner as in the embodiment. In addition, the following example is used as a reference example: Except that the developing solution D is shaken off after the droplets of the developing solution D are formed, and then the rinse liquid R is not supplied to the wafer W, and the dissolved portion is not washed away, all are implemented. Examples are handled in the same way.

For each wafer W in Examples, Comparative Examples, and Reference Examples, CD (Critical Dimension: critical dimension) was measured, and CDU (Critical Dimension Uniformity) was calculated. Use the evaluation wafer divided into 437 rectangular areas corresponding to the size of the wafer area on the surface, and use the center of the 9 divided areas where each rectangular area is divided into a matrix shape as the measurement point of the CD (measurement position). That is, nine measurement points are set in each rectangular area.

CD is measured at each measurement point in each rectangular region, and the CDU of the wafer W is calculated. Table 1 lists the CDUs of the individual wafers W of the reference examples, comparative examples, and examples. This number is calculated as follows. If the aforementioned nine measurement points of each rectangular area are P1, P2, ... P9, the CD 値 of P1 in each rectangular area is extracted, and the average 値 of these CD 値 is used as a mask of P1 値. The mask 値 was obtained similarly for P2 to P9. Then in each rectangular area, the CD 値 (actually measured 値) measured with P1 is subtracted from the mask 値 m (P1) of P1. For P2 to P9, the mask 値 of the corresponding measurement point is subtracted from the measured CD 値 (measured 値) in the same manner. Then, the CDU is obtained based on the CD 値 (the number 这样 of the mask 値 is subtracted from the measured 値) after the mask processing. If this calculation is described functionally, the CD 値 caused by the process components can be obtained by subtracting the CD 値 caused by the mask during exposure from the measured data of the CD.

Furthermore, the inter-domain CDU refers to: the average 値 of each CD 値 of P1 to P9 is obtained according to each rectangular area, that is, the average 区域 of the rectangular area, and the CDU calculated based on the average 値 of the rectangular area of each rectangular area . Furthermore, the internal CDU is calculated from the CD 値 used when calculating the overall CDU (the number obtained by subtracting the mask 値 from the measured 値), and the area average 値 (the CD 矩形 corresponding to P1 to P9 in each rectangular area). Is the same number 値 (average 値)).

於參考例中，整體CDU係1.04，域間CDU係0.70，內部CDU係0.78；但在比較例中，整體CDU係1.11，域間CDU係0.72，內部CDU係0.85。相對於此，於實施例中，整體CDU係1.04，域間CDU係0.69，內部CDU係0.78。【Table 1】

In the reference example, the overall CDU is 1.04, the inter-domain CDU is 0.70, and the internal CDU is 0.78; but in the comparative example, the overall CDU is 1.11, the inter-domain CDU is 0.72, and the internal CDU is 0.85. In contrast, in the embodiment, the overall CDU is 1.04, the inter-domain CDU is 0.69, and the internal CDU is 0.78.

According to this result, compared with the reference example, the CDU is larger in the comparative example. It can be said that after the developer D is supplied, if the developer D is not shaken and the rinse solution R is supplied, the surface of the CD will be made. Internal uniformity becomes worse. Furthermore, compared with the comparative example, the CDU of the embodiment is smaller. Therefore, as compared with the case where the developer D is not thrown off after the developer D is supplied, and the rinse solution R is supplied in a straight line, the developer R is supplied only after the developer D is removed. The CD equivalent to the case where no rinsing solution is supplied can be said that the in-plane uniformity of the CD becomes good.

3‧‧‧Developer nozzle
5‧‧‧Flushing nozzle
50‧‧‧Flushing liquid supply source
51‧‧‧Flushing liquid supply pipe
6‧‧‧ cup body
7‧‧‧ Lifting mechanism
8‧‧‧Pure water nozzle
80‧‧‧Pure water supply source
81‧‧‧Pure water supply pipe
12‧‧‧ Rotating Chuck
13‧‧‧rotating mechanism
131‧‧‧rotation axis
14‧‧‧ Lifting and ejecting pin
15‧‧‧Lifting mechanism
18‧‧‧ Lifting plate
20‧‧‧ cup body
21‧‧‧Lifting mechanism
22‧‧‧ round plate
22A‧‧‧through hole
23‧‧‧Mountain Guide
24‧‧‧Liquid receiving department
25‧‧‧ Drainage Road
26‧‧‧Exhaust pipe
27‧‧‧ vertical wall
28‧‧‧ Upper guide
29‧‧‧ back side cleaning liquid nozzle
30‧‧‧Body
31‧‧‧ release
32‧‧‧Contact
33‧‧‧Developer supply channel
36‧‧‧Developer supply pipe
361‧‧‧Developer supply source
41‧‧‧arm body
60‧‧‧Movable Cup
60A, 60B‧‧‧Ring plate
60C‧‧‧Cylinder
60D‧‧‧ protrusion
61A, 61B ‧‧‧ zoning walls
62‧‧‧Liquid receiving department
62A, 62B, 62C‧‧‧ Recess
63‧‧‧Outside Cup
64‧‧‧ exhaust port
65, 66‧‧‧ drain port
67, 68‧‧‧ drain pipe
69‧‧‧Exhaust pipe
90‧‧‧gas nozzle
100‧‧‧Control Department
D‧‧‧Developer
P‧‧‧Pure water
R‧‧‧ Rinse solution
W‧‧‧ Wafer

[Fig. 1] A sectional view of a developing device according to a first embodiment. [Fig. 2] A sectional view of a developer nozzle provided in the developing device. [Fig. 3] (a) to (b) are explanatory diagrams showing the operation of the developing device of the first embodiment. [FIG. 4] An explanatory view showing an operation of the developing device according to the first embodiment. [Fig. 5] An explanatory view showing an operation of the developing device according to the first embodiment. [FIG. 6] An explanatory view showing an operation of the developing device according to the first embodiment. [FIG. 7] An explanatory view showing an operation of the developing device according to the first embodiment. [FIG. 8] An explanatory view showing the operation of another example of the developing device of the first embodiment. [FIG. 9] A cross-sectional view of a developing device according to a second embodiment. [FIG. 10] An explanatory view showing an operation of the developing device according to the second embodiment. [FIG. 11] An explanatory view showing an operation of the developing device according to the second embodiment.

12‧‧‧ Rotating Chuck

131‧‧‧rotation axis

D‧‧‧Developer

W‧‧‧ Wafer

Claims (12)

A developing method is to supply an organic developing solution to a substrate coated with a photoresist and exposed to perform a developing process; the developing method includes the following steps: a substrate holding step to maintain the exposed substrate at a horizontal level A developer supply step, followed by supplying the developer solution to the surface of the substrate; a developer removal step, followed by removal of the developer solution on the surface of the substrate; and a cleaning solution supply step, and then supplying the cleaned substrate to the substrate surface A cleaning solution consisting of organic solvents. For example, the developing method of the first patent application range, wherein the developing solution removing step is to rotate the substrate held horizontally about a vertical axis to shake off the developing solution and dry the surface of the substrate. For example, in the developing method of claim 1, the developing solution removing step is to supply a replacement fluid to the substrate to replace the droplets of the developing solution with the replacement fluid. For example, the development method according to the third aspect of the patent application, wherein the replacement fluid is a replacement fluid. For example, the development method of the third item of the patent application, wherein the replacement fluid is a gas or water mist. For example, the developing method according to any one of claims 1 to 5, wherein the photoresist film is a negative photoresist film in which the exposed area is insoluble with respect to the organic developing solution. A developing device is an organic developing process for a substrate coated with photoresist on the surface and exposed to light. The developing device includes: a substrate holding portion that holds the substrate horizontally; and a rotating mechanism that rotates the substrate holding portion around a vertical axis. A developer supply unit that supplies an organic developer to the surface of the substrate; a cleaning solution supply unit that supplies a cleaning solution composed of an organic solvent that cleans the substrate to the surface of the substrate; a removal mechanism that removes the surface of the substrate A developing solution; and a control unit that executes the following steps; a step of supplying a developing solution to the surface of the substrate held horizontally; a step of removing the developing solution on the surface of the substrate by a removing mechanism; and, thereafter, Step of supplying cleaning solution on the surface. For example, the developing device of the seventh patent application range, wherein the removing mechanism is a rotating mechanism that rotates the substrate holding portion about a vertical axis; and the step of removing the developing solution on the surface of the substrate is to rotate the substrate about the vertical axis to shake The step of removing the developer and drying the surface of the substrate. For example, the developing device according to claim 7 of the patent application scope, wherein the removal mechanism is a replacement fluid supply unit that supplies a replacement fluid to the surface of the substrate; and the step of removing the developer solution on the surface of the substrate is to supply the replacement fluid to the substrate to A step of replacing droplets of a developing solution with replacement fluids. For example, the developing device according to claim 9 of the patent application scope, wherein the replacement fluid is a replacement fluid. For example, the developing device according to item 9 of the application, wherein the replacement fluid is a gas or water mist. A recording medium records a computer program for a developing device that performs organic development processing on a substrate coated with a photoresist and exposed after exposure to the substrate; the computer program includes a computer program for executing A step group of the developing method according to any one of 6 items.