WO2017164689A3 - 스니크 전류 제어 기반 멤리스터 소자 어레이 - Google Patents

스니크 전류 제어 기반 멤리스터 소자 어레이 Download PDF

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Publication number
WO2017164689A3
WO2017164689A3 PCT/KR2017/003188 KR2017003188W WO2017164689A3 WO 2017164689 A3 WO2017164689 A3 WO 2017164689A3 KR 2017003188 W KR2017003188 W KR 2017003188W WO 2017164689 A3 WO2017164689 A3 WO 2017164689A3
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WO
WIPO (PCT)
Prior art keywords
sneak current
element array
current control
memristor element
based memristor
Prior art date
Application number
PCT/KR2017/003188
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English (en)
French (fr)
Other versions
WO2017164689A2 (ko
Inventor
배진호
알리샤우카트
Original Assignee
제주대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 제주대학교 산학협력단 filed Critical 제주대학교 산학협력단
Publication of WO2017164689A2 publication Critical patent/WO2017164689A2/ko
Publication of WO2017164689A3 publication Critical patent/WO2017164689A3/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)

Abstract

본 발명은 스니크 전류(sneak current) 제어 기반 멤리스터(Memristor) 소자 어레이에 관한 것으로, 보다 상세하게는 메모리와 레지스터가 결합된 멤리스터(Memristor) 소자를 소정의 금속 화합물 층에 적층하여 전압 인가 시 다른 소자로 흐르는 스니크 전류(sneak cuurent)에 대한 발생 제어가 가능한 특성 소자로 제작함으로써 스니크 전류의 발생을 억제 가능할 뿐만 아니라 이에 따라 데이터 리드의 오류를 지양할 수 있는 기술을 제공할 수 있는 것이다.
PCT/KR2017/003188 2015-05-19 2017-03-24 스니크 전류 제어 기반 멤리스터 소자 어레이 WO2017164689A2 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20150069839 2015-05-19
KR10-2016-0036302 2016-03-25
KR1020160036302A KR101762619B1 (ko) 2015-05-19 2016-03-25 스니크 전류 제어 기반 멤리스터 소자 어레이

Publications (2)

Publication Number Publication Date
WO2017164689A2 WO2017164689A2 (ko) 2017-09-28
WO2017164689A3 true WO2017164689A3 (ko) 2018-08-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2017/003188 WO2017164689A2 (ko) 2015-05-19 2017-03-24 스니크 전류 제어 기반 멤리스터 소자 어레이

Country Status (2)

Country Link
KR (1) KR101762619B1 (ko)
WO (1) WO2017164689A2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112038096B (zh) * 2020-09-28 2021-09-21 湖南艾华集团股份有限公司 一种耐纹波电流的固态铝电解电容器及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080009278A (ko) * 2005-05-02 2008-01-28 어드밴스드 마이크로 디바이시즈, 인코포레이티드 다이오드를 갖는 저항 스위칭 메모리 셀의 디자인 및 작동
KR20110074359A (ko) * 2009-12-24 2011-06-30 삼성전자주식회사 저항성 메모리 소자 및 그 제조방법
US20130051121A1 (en) * 2010-04-22 2013-02-28 Jianhua Yang Switchable two-terminal devices with diffusion/drift species

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080009278A (ko) * 2005-05-02 2008-01-28 어드밴스드 마이크로 디바이시즈, 인코포레이티드 다이오드를 갖는 저항 스위칭 메모리 셀의 디자인 및 작동
KR20110074359A (ko) * 2009-12-24 2011-06-30 삼성전자주식회사 저항성 메모리 소자 및 그 제조방법
US20130051121A1 (en) * 2010-04-22 2013-02-28 Jianhua Yang Switchable two-terminal devices with diffusion/drift species

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ALI, SHAWKAT ET AL.: "Organic Non-volatile Memory Cell Based on Resistive Elements through Eletro-hydrodynamic Technique", ORGANIC ELECTRONICS, vol. 17, 2015, pages 121 - 128, XP029134809 *
MUSTAFA, MARIA ET AL.: "Electrospray Deposition of a Graphene-oxide T hin Film, Its Characterization and Investigation of Its Resistive Switching Performance", JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 61, no. 3, August 2012 (2012-08-01), pages 470 - 475, XP055529923 *

Also Published As

Publication number Publication date
WO2017164689A2 (ko) 2017-09-28
KR101762619B1 (ko) 2017-08-04
KR20160136222A (ko) 2016-11-29

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