SG11201805489YA - Memory device, and data processing method based on multi-layer rram crossbar array - Google Patents
Memory device, and data processing method based on multi-layer rram crossbar arrayInfo
- Publication number
- SG11201805489YA SG11201805489YA SG11201805489YA SG11201805489YA SG11201805489YA SG 11201805489Y A SG11201805489Y A SG 11201805489YA SG 11201805489Y A SG11201805489Y A SG 11201805489YA SG 11201805489Y A SG11201805489Y A SG 11201805489YA SG 11201805489Y A SG11201805489Y A SG 11201805489YA
- Authority
- SG
- Singapore
- Prior art keywords
- crossbar array
- memory device
- rram crossbar
- data processing
- processing method
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title abstract 2
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F9/00—Arrangements for program control, e.g. control units
- G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
- G06F9/30—Arrangements for executing machine instructions, e.g. instruction decode
- G06F9/30003—Arrangements for executing specific machine instructions
- G06F9/30007—Arrangements for executing specific machine instructions to perform operations on data operands
- G06F9/30036—Instructions to perform operations on packed data, e.g. vector, tile or matrix operations
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/10—Complex mathematical operations
- G06F17/16—Matrix or vector computation, e.g. matrix-matrix or matrix-vector multiplication, matrix factorization
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F9/00—Arrangements for program control, e.g. control units
- G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
- G06F9/30—Arrangements for executing machine instructions, e.g. instruction decode
- G06F9/30003—Arrangements for executing specific machine instructions
- G06F9/30007—Arrangements for executing specific machine instructions to perform operations on data operands
- G06F9/3001—Arithmetic instructions
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F9/00—Arrangements for program control, e.g. control units
- G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
- G06F9/30—Arrangements for executing machine instructions, e.g. instruction decode
- G06F9/30003—Arrangements for executing specific machine instructions
- G06F9/30007—Arrangements for executing specific machine instructions to perform operations on data operands
- G06F9/30025—Format conversion instructions, e.g. Floating-Point to Integer, decimal conversion
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06J—HYBRID COMPUTING ARRANGEMENTS
- G06J1/00—Hybrid computing arrangements
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
- G06N3/065—Analogue means
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
Abstract
MEMORY DEVICE, AND DATA PROCESSING METHOD BASED ON MULTI-LAYER RRAM CROSSBAR ARRAY Embodiments of the present invention provide a memory device. The memory device includes an RRAM crossbar array that is configured to perform a logic operation, and resistance values of 5 resistors in the RRAM crossbar array are all set to Ron or Roff to indicate a Boolean value 1 or 0. Based on the foregoing setting, a Boolean operation is implemented by using the RRAM crossbar array, so that reliability of a logic operation of the RRAM crossbar array can be improved. Fig. 5 10
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2016/071254 WO2017124237A1 (en) | 2016-01-18 | 2016-01-18 | Memory device and data-processing method based on multi-layer rram crossbar array |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201805489YA true SG11201805489YA (en) | 2018-07-30 |
Family
ID=59361091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201805489YA SG11201805489YA (en) | 2016-01-18 | 2016-01-18 | Memory device, and data processing method based on multi-layer rram crossbar array |
Country Status (6)
Country | Link |
---|---|
US (1) | US10459724B2 (en) |
EP (1) | EP3389051B1 (en) |
JP (1) | JP6702596B2 (en) |
CN (1) | CN108475522B (en) |
SG (1) | SG11201805489YA (en) |
WO (1) | WO2017124237A1 (en) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10878317B2 (en) * | 2017-09-11 | 2020-12-29 | Samsung Electronics Co., Ltd. | Method and system for performing analog complex vector-matrix multiplication |
IT201700108281A1 (en) * | 2017-09-27 | 2019-03-27 | Milano Politecnico | "RESOLUTION CIRCUIT FOR MATHEMATICAL PROBLEMS INCLUDING RESISTIVE ELEMENTS." |
US11189345B2 (en) * | 2018-01-22 | 2021-11-30 | Institute of Microelectronics, Chinese Academy of Sciences | Method for implementing logic calculation based on a crossbar array structure of resistive switching device |
JP7070190B2 (en) * | 2018-07-18 | 2022-05-18 | 株式会社デンソー | Neural network circuit |
US11170290B2 (en) | 2019-03-28 | 2021-11-09 | Sandisk Technologies Llc | Realization of neural networks with ternary inputs and binary weights in NAND memory arrays |
US10643705B2 (en) | 2018-07-24 | 2020-05-05 | Sandisk Technologies Llc | Configurable precision neural network with differential binary non-volatile memory cell structure |
US11328204B2 (en) | 2018-07-24 | 2022-05-10 | Sandisk Technologies Llc | Realization of binary neural networks in NAND memory arrays |
US10643119B2 (en) * | 2018-07-24 | 2020-05-05 | Sandisk Technologies Llc | Differential non-volatile memory cell for artificial neural network |
CN108763163B (en) * | 2018-08-02 | 2023-10-20 | 北京知存科技有限公司 | Analog vector-matrix multiplication circuit |
US11410025B2 (en) * | 2018-09-07 | 2022-08-09 | Tetramem Inc. | Implementing a multi-layer neural network using crossbar array |
US10489483B1 (en) * | 2018-09-21 | 2019-11-26 | National Technology & Engineering Solutions Of Sandia, Llc | Circuit arrangement and technique for setting matrix values in three-terminal memory cells |
CN109327219B (en) * | 2018-10-18 | 2022-05-03 | 中国科学院微电子研究所 | Memristor RRAM-based logic operation system |
US11636325B2 (en) | 2018-10-24 | 2023-04-25 | Macronix International Co., Ltd. | In-memory data pooling for machine learning |
CN109521995B (en) * | 2018-11-02 | 2023-05-12 | 上海交通大学 | Calculation method of logic operation device embedded in memristor array |
US11562229B2 (en) | 2018-11-30 | 2023-01-24 | Macronix International Co., Ltd. | Convolution accelerator using in-memory computation |
US11074318B2 (en) | 2018-12-14 | 2021-07-27 | Western Digital Technologies, Inc. | Hardware accelerated discretized neural network |
US11934480B2 (en) | 2018-12-18 | 2024-03-19 | Macronix International Co., Ltd. | NAND block architecture for in-memory multiply-and-accumulate operations |
US11114158B1 (en) * | 2019-01-23 | 2021-09-07 | Tetramem Inc. | Reducing column switch resistance errors in RRAM-based crossbar array circuits |
IT201900014688A1 (en) * | 2019-08-12 | 2019-11-12 | Univ Degli Studi Di Modena E Reggio Emilia | Reading method for Logic-in-Memory circuits and related circuit architecture |
EP4018597A4 (en) * | 2019-08-22 | 2023-04-12 | Quantumciel Pte. Ltd. | Device, system and method for providing information security |
US10726331B1 (en) | 2019-08-26 | 2020-07-28 | International Business Machines Corporation | Neural network circuits providing early integration before analog-to-digital conversion |
US11568200B2 (en) | 2019-10-15 | 2023-01-31 | Sandisk Technologies Llc | Accelerating sparse matrix multiplication in storage class memory-based convolutional neural network inference |
US11625586B2 (en) | 2019-10-15 | 2023-04-11 | Sandisk Technologies Llc | Realization of neural networks with ternary inputs and ternary weights in NAND memory arrays |
JP6818116B1 (en) * | 2019-11-22 | 2021-01-20 | ウィンボンド エレクトロニクス コーポレーション | Electronic devices and data processing methods using crossbar arrays |
US11657259B2 (en) | 2019-12-20 | 2023-05-23 | Sandisk Technologies Llc | Kernel transformation techniques to reduce power consumption of binary input, binary weight in-memory convolutional neural network inference engine |
CN111478703B (en) * | 2020-04-14 | 2023-08-22 | 中国人民解放军国防科技大学 | Memristor cross array-based processing circuit and output current compensation method |
US11397885B2 (en) | 2020-04-29 | 2022-07-26 | Sandisk Technologies Llc | Vertical mapping and computing for deep neural networks in non-volatile memory |
US11544547B2 (en) | 2020-06-22 | 2023-01-03 | Western Digital Technologies, Inc. | Accelerating binary neural networks within latch structure of non-volatile memory devices |
US11568228B2 (en) | 2020-06-23 | 2023-01-31 | Sandisk Technologies Llc | Recurrent neural network inference engine with gated recurrent unit cell and non-volatile memory arrays |
US11663471B2 (en) | 2020-06-26 | 2023-05-30 | Sandisk Technologies Llc | Compute-in-memory deep neural network inference engine using low-rank approximation technique |
US11544061B2 (en) * | 2020-12-22 | 2023-01-03 | International Business Machines Corporation | Analog hardware matrix computation |
CN114594819B (en) * | 2022-01-19 | 2023-12-05 | 之江实验室 | Circuit and method for adaptively adjusting operating voltage for tracking ferroelectric capacitor process |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2501932B2 (en) | 1990-03-19 | 1996-05-29 | 富士通株式会社 | Center of gravity determining element output device by neural network |
JPH08212185A (en) * | 1995-01-31 | 1996-08-20 | Mitsubishi Electric Corp | Microcomputer |
JP2009117003A (en) * | 2007-11-09 | 2009-05-28 | Toshiba Corp | Data reading method for nonvolatile memory device |
JP5197427B2 (en) * | 2008-08-25 | 2013-05-15 | 株式会社東芝 | Semiconductor memory device |
KR101583717B1 (en) * | 2009-01-13 | 2016-01-11 | 삼성전자주식회사 | Methods for fabricating resistive random access memory devices |
CN102169720B (en) * | 2010-02-25 | 2014-04-02 | 复旦大学 | Resistor random access memory for eliminating over-write and error-write phenomena |
US8675391B2 (en) * | 2010-04-19 | 2014-03-18 | Hewlett-Packard Development Company, L.P. | Refreshing memristive systems |
CN102412827B (en) | 2011-11-02 | 2014-06-11 | 北京大学 | Method for realizing logic operation by utilizing RRAM devices |
JP2014081842A (en) | 2012-10-17 | 2014-05-08 | Sharp Corp | Arithmetic unit |
US8982647B2 (en) * | 2012-11-14 | 2015-03-17 | Crossbar, Inc. | Resistive random access memory equalization and sensing |
US9152827B2 (en) * | 2012-12-19 | 2015-10-06 | The United States Of America As Represented By The Secretary Of The Air Force | Apparatus for performing matrix vector multiplication approximation using crossbar arrays of resistive memory devices |
US9846644B2 (en) * | 2013-01-14 | 2017-12-19 | Hewlett Packard Enterprise Development Lp | Nonvolatile memory array logic |
CN104240753B (en) | 2013-06-10 | 2018-08-28 | 三星电子株式会社 | Cynapse array, pulse shaper and neuromorphic system |
US9489997B2 (en) * | 2013-07-03 | 2016-11-08 | Crossbar, Inc. | Hardware assisted meta data lookup |
CN103716038B (en) | 2013-12-25 | 2016-05-25 | 华中科技大学 | A kind of non-volatile logic gate circuit based on phase transition storage |
US10025704B2 (en) * | 2013-12-27 | 2018-07-17 | Crossbar, Inc. | Memory system including PE count circuit and method of operating the same |
US20150213884A1 (en) * | 2014-01-30 | 2015-07-30 | University Of Dayton | Partitioned resistive memory array |
CN104124960B (en) | 2014-06-20 | 2018-02-23 | 华中科技大学 | A kind of non-volatile boolean calculation circuit and its operating method |
WO2016064406A1 (en) | 2014-10-23 | 2016-04-28 | Hewlett Packard Enterprise Development Lp | Memristive cross-bar array for determining a dot product |
-
2016
- 2016-01-18 SG SG11201805489YA patent/SG11201805489YA/en unknown
- 2016-01-18 WO PCT/CN2016/071254 patent/WO2017124237A1/en active Application Filing
- 2016-01-18 JP JP2018537499A patent/JP6702596B2/en active Active
- 2016-01-18 EP EP16885510.4A patent/EP3389051B1/en active Active
- 2016-01-18 CN CN201680058624.6A patent/CN108475522B/en active Active
-
2018
- 2018-07-17 US US16/037,767 patent/US10459724B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN108475522A (en) | 2018-08-31 |
EP3389051B1 (en) | 2020-09-09 |
WO2017124237A1 (en) | 2017-07-27 |
CN108475522B (en) | 2020-12-15 |
JP6702596B2 (en) | 2020-06-03 |
EP3389051A1 (en) | 2018-10-17 |
JP2019502225A (en) | 2019-01-24 |
EP3389051A4 (en) | 2019-01-09 |
US10459724B2 (en) | 2019-10-29 |
US20180321942A1 (en) | 2018-11-08 |
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