WO2017163409A1 - Substrate supporting table, substrate processing apparatus, and method for manufacturing semiconductor device - Google Patents
Substrate supporting table, substrate processing apparatus, and method for manufacturing semiconductor device Download PDFInfo
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- WO2017163409A1 WO2017163409A1 PCT/JP2016/059675 JP2016059675W WO2017163409A1 WO 2017163409 A1 WO2017163409 A1 WO 2017163409A1 JP 2016059675 W JP2016059675 W JP 2016059675W WO 2017163409 A1 WO2017163409 A1 WO 2017163409A1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Abstract
Description
まず、第1の実施形態で好適に使用される基板処理装置について説明する。この基板処理装置は、半導体装置の製造に使用される半導体製造装置の一例として構成されているものである。 (1) Configuration of Substrate Processing Apparatus First, a substrate processing apparatus suitably used in the first embodiment will be described. This substrate processing apparatus is configured as an example of a semiconductor manufacturing apparatus used for manufacturing a semiconductor device.
処理室201の底側中央には、ウエハ200を載置する基板支持部(基板載置部)としてのサセプタ217が配置されている。サセプタ217は、ヒータ218とリフレクタ(反射部材)219を内蔵しており、非金属材料の部材により構成されている。本実施形態では石英で形成されている。また、サセプタ217とウエハ200との間には、サセプタ217側からの熱をウエハ200へ均一に伝えるためのサセプタカバーを設けることもできる。サセプタカバーは、窒化アルミニウム(AlN)、セラミックス、石英、炭化ケイ素(SiC)等の非金属材料から形成されている。 (Susceptor)
In the center of the bottom side of the
処理室201の上方、つまり上側容器210の上部には、シャワーヘッド236が設けられている。シャワーヘッド236は、キャップ状の蓋体233と、ガス導入口234と、バッファ室237と、開口238と、遮蔽プレート240と、ガス吹出口239とを備え、反応ガスを処理室201内へ供給できるように構成されている。バッファ室237は、ガス導入口234より導入される反応ガスを分散する分散空間としての機能を持つ。 (Gas supply part)
A
下側容器211の側壁には、処理室201内から反応ガスを排気するガス排気口235が設けられている。ガス排気口235には、ガス排気管231の上流端が接続されている。ガス排気管231には、上流側から順に圧力調整器(圧力調整部)としてのAPC(Auto Pressure Controller)242、開閉弁としてのバルブ243B、真空排気装置としての真空ポンプ246が設けられている。 (Exhaust part)
A
処理室201の外周部、すなわち上側容器210の側壁の外側には、処理室201を囲うように、螺旋状の共振コイル212が設けられている。共振コイル212には、RFセンサ272、高周波電源273と周波数整合器274が接続される。高周波電源273は、共振コイル212に高周波電力を供給するものである。RFセンサ272は高周波電源273の出力側に設けられている。RFセンサ272は、供給される高周波の進行波や反射波の情報をモニタするものである。周波数整合器274は、RFセンサ272でモニタされた反射波の情報に基づいて、反射波が最小となるよう、高周波電源273を制御するものである。 (Plasma generator)
A
制御部としてのコントローラ221は、信号線Aを通じてAPC242、バルブ243Bおよび真空ポンプ246を、信号線Bを通じてサセプタ昇降機構268を、信号線Cを通じてヒータ275を、信号線Dを通じてゲートバルブ244を、信号線Eを通じてRFセンサ272、高周波電源273および周波数整合器274を、信号線Fを通じてマスフローコントローラ252A,252B,252Cおよびバルブ253A,253B,253C,243Aを、各々制御するように構成されている。 (Control part)
The
次に、第1の実施形態において好適に実施される基板処理工程について説明する。本実施形態に係る基板処理工程は、例えばフラッシュメモリ等の半導体デバイスの製造工程の一工程として、上述の基板処理装置100により実施される。なお以下の説明において、基板処理装置100を構成する各部の動作は、コントローラ221により制御される。 (2) Substrate Processing Step Next, the substrate processing step that is preferably performed in the first embodiment will be described. The substrate processing process according to this embodiment is performed by the above-described
まず、ウエハ200を処理室201内に搬入する。具体的には、サセプタ昇降機構268がウエハ200の搬送位置までサセプタ217を下降させて、サセプタ217の貫通孔220にウエハ突上げピン266を貫通させる。その結果、ウエハ突き上げピン266が、サセプタ217表面よりも所定の高さ分だけ突出した状態となる。 (Substrate loading process)
First, the
続いて、処理室201内に搬入されたウエハ200の昇温を行う。ヒータ218は予め加熱されており、ヒータ218が内蔵されたサセプタ217上に、搬入されたウエハ200を保持することで、例えば150℃以上650℃以下の範囲内の所定値にウエハ200を加熱する。また、ウエハ200の昇温を行う間、真空ポンプ246によりガス排気口235を介して処理室201内を真空排気し、処理室201内の圧力を0.1Pa以上1000Pa以下の範囲内の所定値とする。真空ポンプ246は、少なくとも後述の基板搬出工程が終了するまで作動させておく。 (Temperature raising / evacuation process)
Subsequently, the temperature of the
次に、反応ガスとしての酸素ガスの供給を開始する。具体的には、バルブ253Aを開け、マスフローコントローラ252Aにて流量制御しながら、バッファ室237を介して処理室201内への酸素ガスの供給を開始する。このとき、酸素ガスの流量を、例えば100sccm以上1000sccm以下の範囲内の所定値とする。また、処理室201内の圧力が、例えば1Pa以上1000Pa以下の範囲内の所定圧力となるように、APC242の開度を調整して処理室201内を排気する。このように、処理室201内を適度に排気しつつ、後述のプラズマ処理工程の終了時まで酸素ガスの供給を継続する。 (Reactive gas supply process)
Next, supply of oxygen gas as a reaction gas is started. Specifically, the supply of oxygen gas into the
処理室201内の圧力が安定したら、共振コイル212に対して高周波電源273から整合器272を介して、高周波電力の印加を開始する。 (Plasma treatment process)
When the pressure in the
所定の処理時間が経過して酸素ガスの供給を停止したら、ガス排気口235を介して処理室201内を真空排気する。これにより、処理室201内の酸素ガスや、酸素ガスが反応した排ガス等を処理室201外へと排気する。その後、APC242の開度を調整し、処理室201内の圧力を処理室201に隣接する真空搬送室(ウエハ200の搬出先。図示せず)と同じ圧力(例えば100Pa)に調整する。 (Evacuation process)
When the supply of oxygen gas is stopped after a predetermined processing time has elapsed, the inside of the
処理室201内が所定の圧力となったら、サセプタ217をウエハ200の搬送位置まで下降させ、ウエハ突上げピン266上にウエハ200を支持させる。そして、ゲートバルブ244を開き、図中省略の搬送機構を用いてウエハ200を処理室201外へ搬出する。以上により、本実施形態に係る基板処理工程を終了する。 (Substrate unloading process)
When the inside of the
続いて第1の実施形態におけるサセプタ217、ヒータ218およびリフレクタ219の構造について、比較例と比較しながら説明する。 [Structure of susceptor 217]
Next, the structure of the
図3は、比較例に係るサセプタ217、ヒータ218及びリフレクタ219の構造を示す垂直断面図であり、図2における一点鎖線A-A´における垂直方向の断面を示している。 (Comparative example)
FIG. 3 is a vertical sectional view showing structures of the
続いて上述の比較例に対する第1の実施形態について図5、図6及び図7(A)(B)を用いて説明する。図5は、本実施形態に係るサセプタ217、ヒータ218及びリフレクタ219の構造を示す垂直断面図であり、図2における一点鎖線A-A´における垂直方向の断面を示している。図6は、図5の一部を拡大した拡大断面図である。なお、比較例と同一の構成には比較例と同一の符号を付している。 (First embodiment)
Next, a first embodiment for the above-described comparative example will be described with reference to FIGS. 5, 6, and 7A and 7B. FIG. 5 is a vertical sectional view showing structures of the
続いて第2の実施形態について図8および図9を用いて説明する。図8は、本実施形態に係るサセプタ217、ヒータ218及びリフレクタ219の構造を示す垂直断面図であり、図2における一点鎖線A-A´における垂直方向の断面を示している。図9は、図8の一部を拡大した拡大断面図である。なお、第1の実施形態又は比較例と同一の構成には第1の実施形態又は比較例と同一の符号を付している。 (Second Embodiment)
Next, a second embodiment will be described with reference to FIGS. FIG. 8 is a vertical sectional view showing the structures of the
200・・・ウエハ、
201・・・処理室、
217・・・サセプタ、
218・・・ヒータ、
219・・・リフレクタ、
221・・・コントローラ 100: Substrate processing apparatus,
200 ... wafer,
201 ... processing chamber,
217 ... susceptor,
218 ... heater,
219: Reflector,
221 ... Controller
Claims (17)
- 基板が上部に載置される、石英で構成された上側サセプタと、
石英で構成された下側サセプタと、
面状に形成された金属により構成された熱を反射するリフレクタと、を有し、
前記上側サセプタの下面と前記下側サセプタの上面は、その間に前記リフレクタを挟むように接着されており、
前記下側サセプタの上面には、前記リフレクタを収容する第1の凹部が形成されており、
前記上側サセプタの下面であって前記第1の凹部に対向する部分は表面を粗面化する加工が施されている基板支持台。 An upper susceptor made of quartz, on which the substrate is mounted,
A lower susceptor made of quartz;
A reflector configured to reflect heat composed of a metal formed in a planar shape,
The lower surface of the upper susceptor and the upper surface of the lower susceptor are bonded so as to sandwich the reflector therebetween,
On the upper surface of the lower susceptor, a first recess for accommodating the reflector is formed,
A substrate support base on which a surface of the lower surface of the upper susceptor facing the first recess is roughened. - 請求項1に記載の基板支持台であって、
前記上側サセプタの内部には熱を放射する発熱素子が設けられ、
前記リフレクタは、前記発熱素子から放射される熱を反射するよう構成されている。 The substrate support according to claim 1,
Inside the upper susceptor is provided a heating element that radiates heat,
The reflector is configured to reflect heat radiated from the heating element. - 請求項2に記載の基板支持台であって、
前記上側サセプタは、
前記基板が上部に載置される上部プレートと、
前記下側サセプタと接着される下部プレートと、
前記上部プレートと前記下部プレートの間に挟まれるように設けられる前記発熱素子と、を有する。 The substrate support according to claim 2,
The upper susceptor is
An upper plate on which the substrate is placed; and
A lower plate bonded to the lower susceptor;
And the heating element provided to be sandwiched between the upper plate and the lower plate. - 請求項1に記載の基板支持台であって、
前記上側サセプタと前記下側サセプタは、研磨加工された前記上側サセプタの下面と前記下側サセプタの上面を加熱圧着することにより接着されており、
前記上側サセプタの下面であって前記第1の凹部に対向する部分の表面粗さは、研磨加工された前記上側サセプタの下面の表面粗さよりも大きい。 The substrate support according to claim 1,
The upper susceptor and the lower susceptor are bonded by thermocompression bonding of the polished lower surface of the upper susceptor and the upper surface of the lower susceptor,
The surface roughness of the lower surface of the upper susceptor facing the first recess is larger than the surface roughness of the lower surface of the polished upper susceptor. - 請求項1に記載の基板支持台であって、
前記上側サセプタの下面であって前記第1の凹部に対向する部分の表面粗さは0.1μm以上である。 The substrate support according to claim 1,
The surface roughness of the lower surface of the upper susceptor and facing the first recess is 0.1 μm or more. - 請求項1に記載の基板支持台であって、
前記上側サセプタの下面であって前記第1の凹部に対向する部分には第2の凹部が形成され、前記第2の凹部の内面であって前記第1の凹部に対向する部分は粗面化されている。 The substrate support according to claim 1,
A second recess is formed in the lower surface of the upper susceptor and facing the first recess, and the inner surface of the second recess and facing the first recess is roughened. Has been. - 請求項6に記載の基板支持台であって、前記第2の凹部及び前記第2の凹部の内面であって前記第1の凹部に対向する粗面化された面は、研削加工により形成される。 The substrate support table according to claim 6, wherein a roughened surface that is the inner surface of the second recess and the second recess and faces the first recess is formed by grinding. The
- 請求項1に記載の基板支持台であって、
前記第1の凹部の底面は粗面化されている。 The substrate support according to claim 1,
The bottom surface of the first recess is roughened. - 請求項8に記載の基板支持台であって、
前記上側サセプタと前記下側サセプタは、
研磨加工された前記上側サセプタの下面と前記下側サセプタの上面を加熱圧着することにより接着されており、
前記第1の凹部の底面の表面粗さは、研磨加工された前記下側サセプタの上面の表面粗さよりも大きい。 A substrate support base according to claim 8, wherein
The upper susceptor and the lower susceptor are:
The lower surface of the polished upper susceptor and the upper surface of the lower susceptor are bonded by thermocompression bonding,
The surface roughness of the bottom surface of the first recess is larger than the surface roughness of the top surface of the polished lower susceptor. - 請求項8に記載の基板支持台であって、
前記第1の凹部及び前記第1の凹部の粗面化された底面は、研削加工により形成される。 A substrate support base according to claim 8, wherein
The first concave portion and the roughened bottom surface of the first concave portion are formed by grinding. - 請求項8に記載の基板支持台であって、
前記上側サセプタの下面であって前記第1の凹部に対向する部分の表面粗さは、前記第1の凹部の底面の表面粗さと実質的に同一である。 A substrate support base according to claim 8, wherein
The surface roughness of the lower surface of the upper susceptor facing the first recess is substantially the same as the surface roughness of the bottom surface of the first recess. - 請求項1に記載の基板支持台であって、
前記上側サセプタの下面であって前記第1の凹部に対向する部分と、前記上側サセプタの下面であって前記下側サセプタと接着された接着面は同一平面を成している。 The substrate support according to claim 1,
A portion of the lower surface of the upper susceptor facing the first recess and a bonding surface of the lower surface of the upper susceptor and bonded to the lower susceptor form the same plane. - 請求項12に記載の基板支持台であって、
前記上側サセプタと前記下側サセプタは、研磨加工された前記上側サセプタの下面と前記下側サセプタの上面を加熱圧着することにより接着されており、
前記上側サセプタの下面であって前記第1の凹部に対向する部分の表面粗さは、研磨加工された前記上側サセプタの下面の表面粗さよりも大きい。 A substrate support table according to claim 12,
The upper susceptor and the lower susceptor are bonded by thermocompression bonding of the polished lower surface of the upper susceptor and the upper surface of the lower susceptor,
The surface roughness of the lower surface of the upper susceptor facing the first recess is larger than the surface roughness of the lower surface of the polished upper susceptor. - 請求項12に記載の基板支持台であって、
前記上側サセプタの下面であって前記第1の凹部に対向する部分の表面粗さは0.1μm以上である。 A substrate support table according to claim 12,
The surface roughness of the lower surface of the upper susceptor and facing the first recess is 0.1 μm or more. - 請求項1に記載の基板支持台であって、
前記リフレクタはモリブデン又はタングステンにより構成される。 The substrate support according to claim 1,
The reflector is made of molybdenum or tungsten. - 基板が載置される基板支持台を備える基板処理装置であって、
前記基板支持台は、
前記基板が上部に載置される、石英で構成された上側サセプタと、
前記上側サセプタの内部又は前記上側サセプタと前記基板との間に設けられた熱を放射する発熱素子と、
石英で構成された下側サセプタと、面状に形成された金属により構成された、前記発熱素子から放射される熱を反射するリフレクタと、を有し、
前記上側サセプタの下面と前記下側サセプタの上面は、その間に前記リフレクタを挟むように接着されており、
前記下側サセプタの上面には、前記リフレクタを収容する第1の凹部が形成されており、
前記上側サセプタの下面であって前記第1の凹部に対向する部分は表面を粗面化する加工が施されている。 A substrate processing apparatus comprising a substrate support on which a substrate is placed,
The substrate support is
An upper susceptor made of quartz on which the substrate is placed;
A heating element that radiates heat provided in the upper susceptor or between the upper susceptor and the substrate;
A lower susceptor made of quartz, and a reflector that is made of a planar metal and reflects heat radiated from the heating element,
The lower surface of the upper susceptor and the upper surface of the lower susceptor are bonded so as to sandwich the reflector therebetween,
On the upper surface of the lower susceptor, a first recess for accommodating the reflector is formed,
A portion of the lower surface of the upper susceptor facing the first recess is processed to roughen the surface. - 基板支持台の上面に基板を載置する工程と、
前記基板支持台の上面に載置された前記基板を加熱する工程と、を有する半導体装置の製造方法であって、
前記基板支持台は、
前記基板が上部に載置される、石英で構成された上側サセプタと、
石英で構成された下側サセプタと、
面状に形成された金属により構成された熱を反射するリフレクタと、を有し、
前記上側サセプタの下面と前記下側サセプタの上面は、その間に前記リフレクタを挟むように接着されており、
前記下側サセプタの上面には、前記リフレクタを収容する第1の凹部が形成されており、
前記上側サセプタの下面であって前記第1の凹部に対向する部分は表面を粗面化する加工が施されている、
半導体装置の製造方法。 Placing the substrate on the upper surface of the substrate support;
Heating the substrate placed on the upper surface of the substrate support, and a method of manufacturing a semiconductor device,
The substrate support is
An upper susceptor made of quartz on which the substrate is placed;
A lower susceptor made of quartz;
A reflector configured to reflect heat composed of a metal formed in a planar shape,
The lower surface of the upper susceptor and the upper surface of the lower susceptor are bonded so as to sandwich the reflector therebetween,
On the upper surface of the lower susceptor, a first recess for accommodating the reflector is formed,
The surface of the lower surface of the upper susceptor that faces the first recess is subjected to a process for roughening the surface.
A method for manufacturing a semiconductor device.
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