JP7116241B2 - sample holder - Google Patents

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JP7116241B2
JP7116241B2 JP2021502147A JP2021502147A JP7116241B2 JP 7116241 B2 JP7116241 B2 JP 7116241B2 JP 2021502147 A JP2021502147 A JP 2021502147A JP 2021502147 A JP2021502147 A JP 2021502147A JP 7116241 B2 JP7116241 B2 JP 7116241B2
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sample holder
groove
surface roughness
distance
holder according
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JPWO2020171179A1 (en
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義悟 楢崎
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H05B3/06—Heater elements structurally combined with coupling elements or holders
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms

Description

本開示は、半導体集積回路の製造工程または液晶表示装置の製造工程等において用いられる、半導体ウエハ等の試料を保持する試料保持具に関するものである。 The present disclosure relates to a sample holder for holding a sample such as a semiconductor wafer, which is used in a manufacturing process of semiconductor integrated circuits, a manufacturing process of liquid crystal display devices, or the like.

従来技術の一例は、特許文献１に記載されている。 An example of the prior art is described in US Pat.

特開２０１１－２２２９７８号公報JP 2011-222978 A

本開示の試料保持具は、試料保持面である第１面および該第１面と反対側の第２面を有する板状の絶縁基体と、
前記絶縁基体の前記第２面に設けられた発熱抵抗体と、を備え、
前記第２面は、前記発熱抵抗体が位置する第１部分と、前記第１部分の周囲を取り囲む第２部分と、前記第１部分と前記第２部分との間に設けられた溝部と、を有し、
前記第１部分の表面粗さが、前記第２部分の表面粗さより大きい構成である。A sample holder of the present disclosure comprises a plate-like insulating substrate having a first surface as a sample holding surface and a second surface opposite to the first surface;
a heating resistor provided on the second surface of the insulating base,
The second surface includes a first portion where the heating resistor is located, a second portion surrounding the first portion, a groove provided between the first portion and the second portion, has
The surface roughness of the first portion is larger than the surface roughness of the second portion.

本開示の目的、特色、および利点は、下記の詳細な説明と図面とからより明確になるであろう。 Objects, features and advantages of the present disclosure will become more apparent from the following detailed description and drawings.

第１実施形態の試料保持具を示す断面図である。Fig. 2 is a cross-sectional view showing the sample holder of the first embodiment; 図１の領域Ａで示す外周部分周辺を拡大した部分拡大断面図である。FIG. 2 is a partially enlarged cross-sectional view enlarging the periphery of the outer peripheral portion indicated by area A in FIG. 1; 第２実施形態の外周部分周辺を拡大した部分拡大断面図である。It is a partially enlarged sectional view enlarging the periphery of the outer peripheral portion of the second embodiment. 第３実施形態の外周部分周辺を拡大した部分拡大断面図である。FIG. 11 is a partially enlarged cross-sectional view enlarging the periphery of the outer peripheral portion of the third embodiment; 第４実施形態の外周部分周辺を拡大した部分拡大断面図である。FIG. 14 is a partially enlarged cross-sectional view enlarging the periphery of the outer peripheral portion of the fourth embodiment; 第５実施形態の外周部分周辺を拡大した部分拡大断面図である。FIG. 12 is a partially enlarged cross-sectional view enlarging the periphery of the outer peripheral portion of the fifth embodiment; 第６実施形態の第１貫通孔周辺を拡大した部分拡大断面図である。FIG. 21 is a partially enlarged cross-sectional view enlarging the periphery of the first through hole of the sixth embodiment;

本開示の試料保持具が基礎とする構成である、半導体製造装置等に用いられる試料保持具として、静電チャックが知られている。静電チャックは、セラミック板の主面に凹部が設けられており、この凹部内に電極が設けられている。 An electrostatic chuck is known as a sample holder used in a semiconductor manufacturing apparatus or the like, on which the sample holder of the present disclosure is based. The electrostatic chuck is provided with a concave portion on the main surface of a ceramic plate, and an electrode is provided inside this concave portion.

この静電チャックでは、電極に高周波信号を印加すると、電極（発熱抵抗体）とセラミック板（絶縁基体）の外周部との間に発生したプラズマによって、絶縁破壊が生じるおそれがある。 In this electrostatic chuck, when a high-frequency signal is applied to the electrode, plasma generated between the electrode (heating resistor) and the outer peripheral portion of the ceramic plate (insulating substrate) may cause dielectric breakdown.

以下、試料保持具１００について、図面を参照して説明する。図１は、第１実施形態の試料保持具を示す断面図である。図２は、図１の領域Ａで示す外周部分周辺を拡大した部分拡大断面図である。試料保持具１００は、絶縁基体１と、発熱抵抗体４と、を備え、さらに、支持体２と、接合材３と、を備える。 The sample holder 100 will be described below with reference to the drawings. FIG. 1 is a cross-sectional view showing the sample holder of the first embodiment. FIG. 2 is a partially enlarged cross-sectional view enlarging the periphery of the outer peripheral portion indicated by area A in FIG. The sample holder 100 includes an insulating substrate 1 and a heating resistor 4 , and further includes a support 2 and a bonding material 3 .

絶縁基体１は、第１面１ａおよび該第１面１ａと反対側の第２面１ｂを有するセラミック体であり、第１面１ａが、試料を保持するために一様に平坦な試料保持面である。絶縁基体１は、板状の部材であって、外形状は限定されず、例えば円板状または角板状などであってもよい。 The insulating substrate 1 is a ceramic body having a first surface 1a and a second surface 1b opposite the first surface 1a, the first surface 1a being a uniformly flat sample holding surface for holding a sample. is. The insulating base 1 is a plate-like member, and its outer shape is not limited, and may be, for example, a disk-like shape or a rectangular plate-like shape.

絶縁基体１は、例えばセラミック材料で構成される。セラミック材料としては、例えばアルミナ、窒化アルミニウム、窒化珪素またはイットリア等とすることができる。絶縁基体１の外形寸法は、例えば直径（または辺長）を２００～５００ｍｍ、厚みを２～１５ｍｍにすることができる。 The insulating base 1 is made of, for example, a ceramic material. The ceramic material may be, for example, alumina, aluminum nitride, silicon nitride, yttria, or the like. The outer dimensions of the insulating substrate 1 can be, for example, a diameter (or side length) of 200 to 500 mm and a thickness of 2 to 15 mm.

発熱抵抗体４は、絶縁基体１の第２面１ｂに設けられている。発熱抵抗体４は、例えば白金、ＡｇＰｂ、タングステンまたはモリブデン等の金属材料で構成されており、通電によって発熱するように、電気抵抗値が調整されている。電気抵抗値は、例えば金属材料中にセラミックス材料などの非導電性材料を混合し、混合割合によって調整することができる。発熱抵抗体４の形状は、たとえば、帯状、ミアンダ状、格子状（グリッド状）などであってもよい。 The heating resistor 4 is provided on the second surface 1 b of the insulating base 1 . The heating resistor 4 is made of a metal material such as platinum, AgPb, tungsten, or molybdenum, and has an electrical resistance value adjusted so that it generates heat when energized. The electrical resistance value can be adjusted, for example, by mixing a non-conductive material such as a ceramic material into the metal material and adjusting the mixing ratio. The shape of the heating resistor 4 may be, for example, strip-like, meander-like, lattice-like (grid-like), or the like.

試料保持具１００は、例えば、試料保持面である絶縁基体１の第１面１ａよりも上方においてプラズマを発生させて用いられる。プラズマは、例えば、外部に設けられた複数の電極間に高周波を印加することによって、電極間に位置するガスを励起させ、発生させることができる。 The sample holder 100 is used, for example, by generating plasma above the first surface 1a of the insulating substrate 1, which is the sample holding surface. Plasma can be generated by, for example, applying high frequency waves between a plurality of externally provided electrodes to excite the gas positioned between the electrodes.

支持体２は、金属製であり、絶縁基体１を支持するための部材である。金属材料としては、例えば、アルミニウムを用いることができる。支持体２の外形状は特に限定されず、円形状または四角形状であってもよい。支持体２の外形寸法は、例えば直径（または辺長）を２００～５００ｍｍに、厚さを１０～１００ｍｍにすることができる。支持体２は、絶縁基体１と同じ外形状であってもよく、異なる外形状であってもよく、同じ外形寸法であってもよく、異なる外形寸法であってもよい。 The support 2 is made of metal and is a member for supporting the insulating base 1 . Aluminum, for example, can be used as the metal material. The outer shape of the support 2 is not particularly limited, and may be circular or rectangular. The outer dimensions of the support 2 can be, for example, a diameter (or side length) of 200-500 mm and a thickness of 10-100 mm. The support 2 may have the same outer shape as the insulating base 1, may have a different outer shape, may have the same outer dimensions, or may have different outer dimensions.

支持体２と絶縁基体１とは、接合材３を介して接合されている。具体的には、一様に平坦である支持体２の第１面２ａと絶縁基体１の第２面１ｂとが、接合材３によって接合されている。支持体２の第１面２ａの外形と絶縁基体１の第２面１ｂの外形とは、例えば、同じであり、接合材３は、支持体２の第１面２ａおよび絶縁基体１の第２面１ｂの全面にわたって接合している。接合材３としては、例えば、樹脂材料の接着剤を用いることができる。樹脂材料としては、例えば、シリコーン樹脂などを用いることができる。また、接合材３が、絶縁基体１の第２面１ｂに設けられた発熱抵抗体４と支持体２の第１面２ａとの間に介在することで、発熱抵抗体４と支持体２との電気絶縁性を確保することができる。 The support 2 and the insulating base 1 are bonded together via a bonding material 3 . Specifically, the uniformly flat first surface 2 a of the support 2 and the second surface 1 b of the insulating substrate 1 are bonded together by the bonding material 3 . The outer shape of the first surface 2a of the support 2 and the outer shape of the second surface 1b of the insulating base 1 are, for example, the same, and the bonding material 3 is formed between the first surface 2a of the support 2 and the second surface 1b of the insulating base 1. It is bonded over the entire surface 1b. As the bonding material 3, for example, an adhesive made of a resin material can be used. For example, a silicone resin or the like can be used as the resin material. In addition, since the bonding material 3 is interposed between the heating resistor 4 provided on the second surface 1b of the insulating substrate 1 and the first surface 2a of the support 2, the heating resistor 4 and the support 2 are bonded together. of electrical insulation can be ensured.

図１に示すように、絶縁基体１には、第１面１ａから第２面１ｂまで貫通する貫通孔（以下では、「第１貫通孔」と呼ぶ）９が設けられている。また、支持体２には、第１面（一方の主面）２ａから該第１面２ａと反対側の第２面（他方の主面）２ｂまで貫通する第２貫通孔７が設けられている。第２貫通孔７と第１貫通孔９とは連通しており、絶縁基体１の第１面１ａから、接合材３を通って、支持体２の第２面２ｂまで連続した孔となっている。第２貫通孔７および第１貫通孔９は、例えば、ヘリウム等のガスを、支持体２の第２面２ｂ側から試料保持面である絶縁基体１の第１面１ａ側に流入させるためのガス流入孔として設けられている。 As shown in FIG. 1, the insulating substrate 1 is provided with a through hole (hereinafter referred to as a "first through hole") 9 penetrating from the first surface 1a to the second surface 1b. Further, the support 2 is provided with a second through-hole 7 penetrating from the first surface (one principal surface) 2a to the second surface (the other principal surface) 2b opposite to the first surface 2a. there is The second through-hole 7 and the first through-hole 9 communicate with each other, forming a continuous hole from the first surface 1a of the insulating substrate 1 through the bonding material 3 to the second surface 2b of the support 2. there is The second through-hole 7 and the first through-hole 9 are for allowing a gas such as helium to flow from the second surface 2b side of the support 2 to the first surface 1a side of the insulating substrate 1, which is the sample holding surface. It is provided as a gas inflow hole.

試料保持面である第１面１ａより上方においてプラズマを発生させたときに、プラズマが第１貫通孔９を通って支持体２側にまで入り込まないようにするために、支持体２の第２貫通孔７内部に多孔質部材５を設けてもよい。多孔質部材５としては、例えば、アルミナ等のセラミック多孔質材料を用いることができる。多孔質部材５は、上面から下面に気体を流すことが可能な程度の気孔率を有している。そのため、第２貫通孔７の内部に多孔質部材５を位置させることによって、第１貫通孔９に気体を流しつつも、プラズマが支持体２側に到達してしまうおそれを低減する。多孔質部材５の気孔率としては、例えば、４０～６０％に設定できる。 In order to prevent the plasma from entering the support 2 side through the first through holes 9 when plasma is generated above the first surface 1a which is the sample holding surface, the second A porous member 5 may be provided inside the through hole 7 . As the porous member 5, for example, a ceramic porous material such as alumina can be used. The porous member 5 has a porosity that allows gas to flow from the upper surface to the lower surface. Therefore, by locating the porous member 5 inside the second through-hole 7 , it is possible to reduce the risk of plasma reaching the support 2 side while allowing the gas to flow through the first through-hole 9 . The porosity of the porous member 5 can be set to 40 to 60%, for example.

本実施形態の絶縁基体１の第２面１ｂは、発熱抵抗体４が位置する第１部分２１と、第１部分２１の周囲を取り囲む第２部分２２と、第１部分２１と第２部分２２との間に設けられた溝部（以下では、「第１溝部」と呼ぶ）２３と、を有している。また、接合材３は、第１部分２１と支持体２の第１面２ａとを接合し、第２部分２２と支持体２の第１面２ａとを接合し、第１溝部２３の内部にまで入り込んでいる。第１貫通孔９は、第１部分２１に開口している。本実施形態では、たとえば、第２面１ｂが円形状であり、第２部分２２が、第２面１ｂの外周の円環状の部分であり、第１部分２１は、第２部分２２に囲まれた、第２面１ｂと同心で小径の円形状の部分であり、第１溝部２３は、第１部分２１と第２部分２２との間に円周状に設けられている。この第１部分２１の表面粗さが、第２部分２２の表面粗さより大きい。なお、第１部分２１の表面粗さは、第１部分２１のうち、発熱抵抗体４が設けられている部分を除き、絶縁基体１表面の露出している部分の表面粗さであって、発熱抵抗体４の表面の表面粗さは含まない。 The second surface 1b of the insulating substrate 1 of the present embodiment includes a first portion 21 where the heating resistor 4 is positioned, a second portion 22 surrounding the first portion 21, and the first portion 21 and the second portion 22. and a groove portion (hereinafter referred to as “first groove portion”) 23 provided between. The bonding material 3 bonds the first portion 21 and the first surface 2 a of the support 2 , bonds the second portion 22 and the first surface 2 a of the support 2 , and extends inside the first groove portion 23 . is entering. The first through hole 9 opens to the first portion 21 . In the present embodiment, for example, the second surface 1b is circular, the second portion 22 is an annular portion on the outer circumference of the second surface 1b, and the first portion 21 is surrounded by the second portion 22. The first groove portion 23 is a small-diameter circular portion that is concentric with the second surface 1 b and is circumferentially provided between the first portion 21 and the second portion 22 . The surface roughness of the first portion 21 is greater than that of the second portion 22 . The surface roughness of the first portion 21 is the surface roughness of the exposed portion of the surface of the insulating base 1, excluding the portion where the heating resistor 4 is provided, of the first portion 21, The surface roughness of the surface of the heating resistor 4 is not included.

上記のように第１面１ａより上方において発生したプラズマが、第１貫通孔９を通って絶縁基体１の第２面１ｂ付近で漏れ出したり、絶縁基体１の外周から第２面１ｂまで回り込んだりすることで、プラズマによって、発熱抵抗体４と絶縁基体１の第２部分２２との間の絶縁破壊が生じるおそれがある。本実施形態では、第１部分２１と第２部分２２との間に第１溝部２３を設けることで、発熱抵抗体４と第２面１ｂの第２部分２２との沿面距離を大きくし、第１部分２１の表面粗さを、第２部分２２の表面粗さより大きくすることで、発熱抵抗体４と第２面１ｂの第２部分２２との沿面距離を、さらに大きくすることができ、絶縁破壊の発生を抑制することができる。 The plasma generated above the first surface 1a as described above leaks out near the second surface 1b of the insulating substrate 1 through the first through holes 9, or circulates from the outer periphery of the insulating substrate 1 to the second surface 1b. If the plasma gets into the heat generating resistor 4 and the second portion 22 of the insulating substrate 1, the dielectric breakdown may occur. In this embodiment, by providing the first groove portion 23 between the first portion 21 and the second portion 22, the creeping distance between the heat generating resistor 4 and the second portion 22 of the second surface 1b is increased. By making the surface roughness of the first portion 21 larger than the surface roughness of the second portion 22, the creepage distance between the heat generating resistor 4 and the second portion 22 of the second surface 1b can be further increased, thereby improving the insulation. It is possible to suppress the occurrence of destruction.

第１部分２１および第２部分２２の表面粗さは、例えば、ＪＩＳＢ０６０１に準拠したＲａ(算術平均粗さ)で表され、第１部分２１の表面粗さＲａは、例えば１．０～２．０μｍであり、第２部分２２の表面粗さＲａは、例えば０．１～０．５μｍである。 The surface roughness of the first portion 21 and the second portion 22 is represented by Ra (arithmetic mean roughness) conforming to JISB0601, for example, and the surface roughness Ra of the first portion 21 is, for example, 1.0 to 2.0. 0 μm, and the surface roughness Ra of the second portion 22 is, for example, 0.1 to 0.5 μm.

第１溝部２３の表面粗さについては、特に限定されないが、第２部分２２の表面粗さより大きくしてもよい。なお、第１溝部２３の表面粗さＲａは、底面部分の表面粗さＲａであり、例えば１．０～２．０μｍである。第１溝部２３の表面粗さを第２部分２２の表面粗さより大きくすることで、沿面距離をさらに大きくし、絶縁破壊の発生を抑制することができる。 The surface roughness of the first groove portion 23 is not particularly limited, but may be greater than the surface roughness of the second portion 22 . The surface roughness Ra of the first groove portion 23 is the surface roughness Ra of the bottom portion, and is, for example, 1.0 to 2.0 μm. By making the surface roughness of the first groove portion 23 larger than the surface roughness of the second portion 22, the creepage distance can be further increased and the occurrence of dielectric breakdown can be suppressed.

図３は、第２実施形態の外周部分周辺を拡大した部分拡大断面図である。本実施形態の試料保持具１００は、外周部分の構成のみが第１実施形態と異なっており、第１実施形態と同様の構成については詳細な説明を省略している。 FIG. 3 is a partially enlarged sectional view enlarging the periphery of the outer peripheral portion of the second embodiment. The sample holder 100 of this embodiment differs from that of the first embodiment only in the configuration of the outer peripheral portion, and detailed description of the same configuration as that of the first embodiment is omitted.

第１実施形態では、第１部分２１の第１面１ａからの距離と、第２部分２２の第１面１ａからの距離とを同じとしている。これに対して本実施形態では、第１部分２１の第１面１ａからの距離を、第２部分２２Ａの第１面１ａからの距離より大きくしている。絶縁基体１の第１面１ａは、一様に平坦な面であり、第１面１ａから、第１部分２１および第２部分２２Ａまでの距離とは、第１部分２１における絶縁基体１の厚さおよび第２部分２２Ａにおける絶縁基体１の厚さである。すなわち、本実施形態では、第１部分２１における絶縁基体１の厚さを、第２部分２２Ａにおける絶縁基体１の厚さより大きくしている。言い換えると、外周の第２部分２２Ａの厚さを、第１部分２１の厚さより小さくしている。 In the first embodiment, the distance from the first surface 1a of the first portion 21 and the distance from the first surface 1a of the second portion 22 are the same. In contrast, in the present embodiment, the distance from the first surface 1a of the first portion 21 is made greater than the distance from the first surface 1a of the second portion 22A. The first surface 1a of the insulating substrate 1 is a uniformly flat surface, and the distance from the first surface 1a to the first portion 21 and the second portion 22A is the thickness of the insulating substrate 1 at the first portion 21. and the thickness of the insulating base 1 in the second portion 22A. That is, in this embodiment, the thickness of the insulating base 1 in the first portion 21 is made larger than the thickness of the insulating base 1 in the second portion 22A. In other words, the thickness of the outer peripheral second portion 22A is made smaller than the thickness of the first portion 21 .

また、支持体２の第１面２ａからの距離は、第２部分２２Ａまでの距離が、第１部分２１までの距離より大きい。そうすると、接合材３の厚さは、第１部分２１の内側に比べて、第２部分２２Ａの外周側のほうが大きくなる。接合材３が厚いほど伝熱抵抗が大きくなるので、元々支持体２へ熱移動しやすい外周側に対して、接合材３の厚さを大きくし、第２部分２２Ａから支持体２への熱移動を抑制する。これにより、試料保持面において、外周側と内側との表面温度の温度差を小さくして均熱性を向上することができる。 Further, regarding the distance from the first surface 2a of the support 2, the distance to the second portion 22A is greater than the distance to the first portion 21. As shown in FIG. As a result, the thickness of the bonding material 3 is greater on the outer peripheral side of the second portion 22A than on the inner side of the first portion 21 . The thicker the bonding material 3, the greater the heat transfer resistance. restrain movement. As a result, it is possible to reduce the difference in surface temperature between the outer peripheral side and the inner side of the sample holding surface, thereby improving heat uniformity.

図４は、第３実施形態の外周部分周辺を拡大した部分拡大断面図である。本実施形態の試料保持具１００は、外周部分の構成のみが第１実施形態と異なっており、第１実施形態と同様の構成については詳細な説明を省略している。 FIG. 4 is a partially enlarged sectional view enlarging the periphery of the outer peripheral portion of the third embodiment. The sample holder 100 of this embodiment differs from that of the first embodiment only in the configuration of the outer peripheral portion, and detailed description of the same configuration as that of the first embodiment is omitted.

第１実施形態では、第１部分２１の第１面１ａからの距離と、第２部分２２の第１面１ａからの距離とを同じとしている。これに対して本実施形態では、第１部分２１の第１面１ａからの距離を、第２部分２２Ｂの第１面１ａからの距離より小さくしている。すなわち、本実施形態では、第１部分２１における絶縁基体１の厚さを、第２部分２２Ｂにおける絶縁基体１の厚さより小さくしている。言い換えると、外周の第２部分２２Ｂの厚さを、第１部分２１の厚さより大きくしている。 In the first embodiment, the distance from the first surface 1a of the first portion 21 and the distance from the first surface 1a of the second portion 22 are the same. On the other hand, in this embodiment, the distance from the first surface 1a of the first portion 21 is made smaller than the distance from the first surface 1a of the second portion 22B. That is, in this embodiment, the thickness of the insulating base 1 in the first portion 21 is made smaller than the thickness of the insulating base 1 in the second portion 22B. In other words, the thickness of the outer peripheral second portion 22B is made larger than the thickness of the first portion 21 .

第１部分２１に設けられた発熱抵抗体４から外周の第２部分２２に向かってアーク放電が生じるおそれがあるが、第２部分２２Ｂの厚さが大きいので、放電経路が非直線的になり、アーク放電の発生を抑制することができる。 Arc discharge may occur from the heating resistor 4 provided in the first portion 21 toward the second portion 22 on the outer periphery, but the second portion 22B is thick, so the discharge path is non-linear. , the occurrence of arc discharge can be suppressed.

図５は、第４実施形態の外周部分周辺を拡大した部分拡大断面図である。本実施形態の試料保持具１００は、外周部分の構成のみが第１実施形態と異なっており、第１実施形態と同様の構成については詳細な説明を省略している。 FIG. 5 is a partially enlarged sectional view enlarging the periphery of the outer peripheral portion of the fourth embodiment. The sample holder 100 of this embodiment differs from that of the first embodiment only in the configuration of the outer peripheral portion, and detailed description of the same configuration as that of the first embodiment is omitted.

第１実施形態では、第１溝部２３の縁部分および第１溝部２３の内壁面と底面とが交差する交差部分は、いずれも角部となっており、例えば、外部からの機械的な衝撃または熱などによる衝撃で生じた応力がこの角部に集中し、クラックや欠けが生じたりするおそれがある。これに対して本実施形態では、第１溝部２３Ａの縁部分および第１溝部２３Ａの内壁面と底面とが交差する交差部分を、Ｒ形状としており、生じた応力を分散させてクラックや欠けの発生を抑制することができる。 In the first embodiment, both the edge portion of the first groove portion 23 and the intersection portion where the inner wall surface and the bottom surface of the first groove portion 23 intersect are corner portions. The stress generated by the impact due to heat concentrates on this corner, which may cause cracks or chipping. On the other hand, in the present embodiment, the edge portion of the first groove portion 23A and the intersection portion where the inner wall surface and the bottom surface of the first groove portion 23A intersect are rounded to disperse the generated stress and prevent cracks and chipping. The occurrence can be suppressed.

図６は、第５実施形態の外周部分周辺を拡大した部分拡大断面図である。本実施形態の試料保持具１００は、外周部分の構成のみが第１実施形態と異なっており、第１実施形態と同様の構成については詳細な説明を省略している。 FIG. 6 is a partially enlarged sectional view enlarging the periphery of the outer peripheral portion of the fifth embodiment. The sample holder 100 of this embodiment differs from that of the first embodiment only in the configuration of the outer peripheral portion, and detailed description of the same configuration as that of the first embodiment is omitted.

第１実施形態では、第１溝部２３の幅は、開口から底面まで一定としている。これに対して本実施形態では、第１溝部２３Ａの幅を、開口から底面に向かうにつれて小さくなるようにしている。第１溝部２３Ａの内部空間の大きさが、相対的に小さくなり、充填される接合材３の量も小さくなる。前述のとおり、接合材３は、熱抵抗を大きくする材料であるので、充填される接合材３の量が小さくなれば、熱抵抗は小さくなる。第１溝部２３Ａに対向する第１面１ａの部分は、発熱抵抗体４で発生した熱によって過熱され易いが、第１溝部２３Ａ内の熱抵抗が小さいので、熱は支持体２へと移動し、過熱が抑えられる。 In the first embodiment, the width of the first groove portion 23 is constant from the opening to the bottom surface. On the other hand, in this embodiment, the width of the first groove portion 23A is made smaller from the opening toward the bottom surface. The size of the internal space of the first groove portion 23A becomes relatively small, and the amount of the bonding material 3 to be filled becomes small. As described above, since the bonding material 3 is a material that increases the thermal resistance, the smaller the amount of the bonding material 3 to be filled, the smaller the thermal resistance. The portion of the first surface 1a facing the first groove 23A is easily overheated by the heat generated by the heating resistor 4, but the heat is transferred to the support 2 because the thermal resistance in the first groove 23A is small. , overheating is suppressed.

図７は、第６実施形態の第１貫通孔周辺を拡大した部分拡大断面図である。本実施形態の試料保持具１００は、第１貫通孔周辺の構成のみが第１実施形態と異なっており、第１実施形態と同様の構成については詳細な説明を省略している。 FIG. 7 is a partially enlarged sectional view enlarging the vicinity of the first through hole of the sixth embodiment. The sample holder 100 of this embodiment differs from that of the first embodiment only in the configuration around the first through hole, and detailed description of the same configuration as that of the first embodiment is omitted.

本実施形態の絶縁基体１の第２面１ｂは、第１貫通孔９の開口周囲に位置する第３部分２４と、第１部分２１と第３部分２４との間に設けられた第２溝部２５と、をさらに有している。第３部分２４は、上記の実施形態においては、第１部分２１の一部に相当していた部分であって、第１貫通孔９の開口周囲に当たる環状部分である。環状の第３部分２４は、第１部分２１によって取り囲まれており、第２溝部２５が、第１部分２１と第３部分２４との間に位置している。 The second surface 1b of the insulating substrate 1 of this embodiment includes a third portion 24 positioned around the opening of the first through hole 9 and a second groove provided between the first portion 21 and the third portion 24. 25 and . The third portion 24 corresponds to a portion of the first portion 21 in the above embodiment, and is an annular portion around the opening of the first through hole 9 . An annular third portion 24 is surrounded by the first portion 21 and a second groove 25 is located between the first portion 21 and the third portion 24 .

本実施形態では、第１部分２１の表面粗さが、第３部分２４の表面粗さより大きい。上記のようにプラズマが、第１貫通孔９を通って絶縁基体１の第２面１ｂ付近で漏れ出すことで、プラズマによって、発熱抵抗体４と絶縁基体１の第３部分２４との間の絶縁破壊が生じるおそれがある。本実施形態では、第１部分２１と第３部分２４との間に第２溝部２５を設けることで、発熱抵抗体４と第２面１ｂの第３部分２４との沿面距離を大きくし、第１部分２１の表面粗さを、第３部分２４の表面粗さより大きくすることで、発熱抵抗体４と第２面１ｂの第３部分２４との沿面距離を、さらに大きくすることができ、絶縁破壊の発生を抑制することができる。第３部分２４の表面粗さＲａは、例えば０．１～０．５μｍである。 In this embodiment, the surface roughness of the first portion 21 is greater than that of the third portion 24 . As described above, the plasma leaks out near the second surface 1b of the insulating base 1 through the first through-hole 9, so that the plasma creates a gap between the heating resistor 4 and the third portion 24 of the insulating base 1. Dielectric breakdown may occur. In the present embodiment, by providing the second groove portion 25 between the first portion 21 and the third portion 24, the creeping distance between the heating resistor 4 and the third portion 24 of the second surface 1b is increased. By making the surface roughness of the first portion 21 larger than the surface roughness of the third portion 24, the creeping distance between the heat generating resistor 4 and the third portion 24 of the second surface 1b can be further increased, thereby improving the insulation. It is possible to suppress the occurrence of destruction. The surface roughness Ra of the third portion 24 is, for example, 0.1-0.5 μm.

第２溝部２５の表面粗さについては、特に限定されないが、第３部分２４の表面粗さより大きくしてもよい。なお、第２溝部２５の表面粗さＲａは、第１溝部２３と同様に底面部分の表面粗さＲａであり、例えば１．０～２．０μｍである。第２溝部２５の表面粗さを第３部分２４の表面粗さより大きくすることで、沿面距離をさらに大きくし、絶縁破壊の発生を抑制することができる。 The surface roughness of the second groove portion 25 is not particularly limited, but may be greater than the surface roughness of the third portion 24 . Note that the surface roughness Ra of the second groove portion 25 is the surface roughness Ra of the bottom portion, like the first groove portion 23, and is, for example, 1.0 to 2.0 μm. By making the surface roughness of the second groove portion 25 larger than the surface roughness of the third portion 24, the creepage distance can be further increased and the occurrence of dielectric breakdown can be suppressed.

本開示は次の実施の形態が可能である。 The present disclosure enables the following embodiments.

本開示の試料保持具は、試料保持面である第１面および該第１面と反対側の第２面を有する板状の絶縁基体と、
前記絶縁基体の前記第２面に設けられた発熱抵抗体と、を備え、
前記第２面は、前記発熱抵抗体が位置する第１部分と、前記第１部分の周囲を取り囲む第２部分と、前記第１部分と前記第２部分との間に設けられた溝部と、を有し、
前記第１部分の表面粗さが、前記第２部分の表面粗さより大きい構成である。A sample holder of the present disclosure comprises a plate-like insulating substrate having a first surface as a sample holding surface and a second surface opposite to the first surface;
a heating resistor provided on the second surface of the insulating base,
The second surface includes a first portion where the heating resistor is located, a second portion surrounding the first portion, a groove provided between the first portion and the second portion, has
The surface roughness of the first portion is larger than the surface roughness of the second portion.

本開示の試料保持具によれば、発熱抵抗体と第２面の第２部分との沿面距離を大きくすることができ、絶縁破壊の発生を抑制することができる。 According to the sample holder of the present disclosure, it is possible to increase the creepage distance between the heating resistor and the second portion of the second surface, thereby suppressing the occurrence of dielectric breakdown.

以上、本開示について詳細に説明したが、本開示は上述の実施の形態に限定されるものではなく、本開示の要旨を逸脱しない範囲内において種々の変更、改良等が可能である。例えば、接合材３は、絶縁基体１の第２面１ｂと支持体２の第１面２ａとの間の全体に位置している必要はなく、一部に設けられていればよい。 Although the present disclosure has been described in detail above, the present disclosure is not limited to the above-described embodiments, and various modifications and improvements are possible without departing from the gist of the present disclosure. For example, the bonding material 3 does not need to be positioned entirely between the second surface 1b of the insulating substrate 1 and the first surface 2a of the support 2, but only needs to be partially provided.

１ 絶縁基体
１ａ 第１面
１ｂ 第２面
２ 支持体
２ａ 第１面
２ｂ 第２面
３ 接合材
４ 発熱抵抗体
５ 多孔質部材
７ 第２貫通孔
９ 第１貫通孔
２１ 第１部分
２２ 第２部分
２２Ａ 第２部分
２２Ｂ 第２部分
２３ 第１溝部
２３Ａ 第１溝部
２４ 第３部分
２５ 第２溝部
１００ 試料保持具REFERENCE SIGNS LIST 1 insulating substrate 1a first surface 1b second surface 2 support 2a first surface 2b second surface 3 bonding material 4 heating resistor 5 porous member 7 second through hole 9 first through hole 21 first portion 22 second second Part 22A Second part 22B Second part 23 First groove 23A First groove 24 Third part 25 Second groove 100 Sample holder

Claims (8)

試料保持面である第１面および該第１面と反対側の第２面を有する板状の絶縁基体と、
前記絶縁基体の前記第２面に設けられた発熱抵抗体と、を備え、
前記第２面は、前記発熱抵抗体が位置する第１部分と、前記第１部分の周囲を取り囲む第２部分と、前記第１部分と前記第２部分との間に設けられた溝部と、を有し、
前記第１部分の表面粗さが、前記第２部分の表面粗さより大きい試料保持具。a plate-shaped insulating substrate having a first surface serving as a sample holding surface and a second surface opposite to the first surface;
a heating resistor provided on the second surface of the insulating base,
The second surface includes a first portion where the heating resistor is located, a second portion surrounding the first portion, a groove provided between the first portion and the second portion, has
A sample holder in which the surface roughness of the first portion is greater than the surface roughness of the second portion. 前記溝部の表面粗さが、前記第２部分の表面粗さより大きい、請求項１記載の試料保持具。 2. The sample holder according to claim 1, wherein the surface roughness of said groove is greater than the surface roughness of said second portion. 前記第１部分の前記第１面からの距離は、前記第２部分の前記第１面からの距離より大きい、請求項１または２記載の試料保持具。 3. The sample holder according to claim 1, wherein the distance of said first portion from said first surface is greater than the distance of said second portion from said first surface. 前記第１部分の前記第１面からの距離は、前記第２部分の前記第１面からの距離より小さい、請求項１または２記載の試料保持具。 3. The specimen holder according to claim 1, wherein the distance of said first portion from said first surface is smaller than the distance of said second portion from said first surface. 前記溝部の縁部分および前記溝部の内壁面と底面とが交差する交差部分は、Ｒ形状である、請求項１～４のいずれか１つに記載の試料保持具。 The sample holder according to any one of claims 1 to 4, wherein an edge portion of said groove portion and an intersection portion where an inner wall surface and a bottom surface of said groove portion intersect are R-shaped. 前記溝部の幅は、開口から底面に向かうにつれて小さくなる、請求項１～５のいずれか１つに記載の試料保持具。 The sample holder according to any one of claims 1 to 5, wherein the width of said groove portion decreases from the opening toward the bottom surface. 前記絶縁基体は、前記第１面から前記第２面まで貫通する貫通孔を有し、
前記第２面は、前記貫通孔の開口周囲に位置する第３部分と、前記第１部分と前記第３部分との間に設けられた第２溝部と、をさらに有し、
前記第１部分の表面粗さが、前記第３部分の表面粗さより大きい、請求項１～６のいずれか１つに記載の試料保持具。The insulating base has a through hole penetrating from the first surface to the second surface,
the second surface further includes a third portion located around the opening of the through hole, and a second groove portion provided between the first portion and the third portion;
A sample holder according to any one of claims 1 to 6, wherein the surface roughness of said first portion is greater than the surface roughness of said third portion. 前記絶縁基体の前記第２面を支持する、金属製の支持体をさらに備える、請求項１～７のいずれか１つに記載の試料保持具。 A sample holder according to any one of claims 1 to 7, further comprising a metallic support that supports said second surface of said insulating substrate.
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WO2014119637A1 (en) 2013-01-30 2014-08-07 京セラ株式会社 Sample holder and plasma etching apparatus using same
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