WO2017160132A3 - Thin film material for low temperature bonding - Google Patents

Thin film material for low temperature bonding Download PDF

Info

Publication number
WO2017160132A3
WO2017160132A3 PCT/KR2017/002966 KR2017002966W WO2017160132A3 WO 2017160132 A3 WO2017160132 A3 WO 2017160132A3 KR 2017002966 W KR2017002966 W KR 2017002966W WO 2017160132 A3 WO2017160132 A3 WO 2017160132A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
film material
low temperature
temperature bonding
metals
Prior art date
Application number
PCT/KR2017/002966
Other languages
French (fr)
Korean (ko)
Other versions
WO2017160132A2 (en
Inventor
김경흠
이준형
추용철
정재필
Original Assignee
덕산하이메탈(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 덕산하이메탈(주) filed Critical 덕산하이메탈(주)
Priority claimed from KR1020170034689A external-priority patent/KR20170108892A/en
Publication of WO2017160132A2 publication Critical patent/WO2017160132A2/en
Publication of WO2017160132A3 publication Critical patent/WO2017160132A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Laminated Bodies (AREA)

Abstract

The present invention relates to a thin film material in which at least two kinds of metals are electroplated. In a first heating, melting occurs at a melting point (Tms) of a metal having a low melting point from among the metals, and at the time of a second and subsequent heating after cooling, melting occurs at a melting point (Tma) of an alloy of the metals. The present invention provides a thin film material which is capable of low temperature bonding and has excellent bonding strength.
PCT/KR2017/002966 2016-03-18 2017-03-20 Thin film material for low temperature bonding WO2017160132A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2016-0033009 2016-03-18
KR20160033009 2016-03-18
KR10-2017-0034689 2017-03-20
KR1020170034689A KR20170108892A (en) 2016-03-18 2017-03-20 Thin Layer Material for low temperature bonding

Publications (2)

Publication Number Publication Date
WO2017160132A2 WO2017160132A2 (en) 2017-09-21
WO2017160132A3 true WO2017160132A3 (en) 2018-09-07

Family

ID=59851064

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2017/002966 WO2017160132A2 (en) 2016-03-18 2017-03-20 Thin film material for low temperature bonding

Country Status (1)

Country Link
WO (1) WO2017160132A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001246493A (en) * 1999-12-28 2001-09-11 Toshiba Corp Soldering material, device or apparatus using same and its producing method
KR20070077613A (en) * 2006-01-24 2007-07-27 삼성전자주식회사 A joining method at low temperature, a mounting method of semiconductor package using the joining method, and a substrate joined structure prepared by the joining method
KR100797161B1 (en) * 2007-05-25 2008-01-23 한국생산기술연구원 Quaternary pb-free solder composition incorporating sn-ag-cu-in
KR20120039698A (en) * 2009-07-14 2012-04-25 도와 일렉트로닉스 가부시키가이샤 Bonding material and bonding method each using metal nanoparticles
KR20160024827A (en) * 2015-10-19 2016-03-07 덕산하이메탈(주) Low temperature bonding method to be joined using multi coating layer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001246493A (en) * 1999-12-28 2001-09-11 Toshiba Corp Soldering material, device or apparatus using same and its producing method
KR20070077613A (en) * 2006-01-24 2007-07-27 삼성전자주식회사 A joining method at low temperature, a mounting method of semiconductor package using the joining method, and a substrate joined structure prepared by the joining method
KR100797161B1 (en) * 2007-05-25 2008-01-23 한국생산기술연구원 Quaternary pb-free solder composition incorporating sn-ag-cu-in
KR20120039698A (en) * 2009-07-14 2012-04-25 도와 일렉트로닉스 가부시키가이샤 Bonding material and bonding method each using metal nanoparticles
KR20160024827A (en) * 2015-10-19 2016-03-07 덕산하이메탈(주) Low temperature bonding method to be joined using multi coating layer

Also Published As

Publication number Publication date
WO2017160132A2 (en) 2017-09-21

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