WO2017152743A1

WO2017152743A1 - Light-emitting device and manufacturing method therefor

Info

Publication number: WO2017152743A1
Application number: PCT/CN2017/073943
Authority: WO
Inventors: 甄常刮; 彭军军
Original assignee: 纳晶科技股份有限公司
Priority date: 2016-03-09
Filing date: 2017-02-17
Publication date: 2017-09-14
Also published as: CN105789484B; CN105789484A

Abstract

Provided are a light-emitting device and a manufacturing method therefor. The method comprises the following steps: a pixel isolation structure (20) is formed on a substrate (10), wherein the pixel isolation structure has a plurality of pixel regions isolated from each other, and an exposed surface of the pixel isolation structure is a hydrophilic surface or a hydrophobic surface; and a light extraction solution is arranged on the substrate corresponding to the pixel regions so as to form a light extraction layer (30), wherein the light extraction solution comprises a base material, scattered particles and a solvent, and when the exposed surface of the pixel isolation structure is a hydrophilic surface, the light extraction solution is a hydrophobic solution, and when the exposed surface of the pixel isolation structure is a hydrophobic surface, the light extraction solution is a hydrophilic solution. In the step of forming the light extraction layer, the light extraction solution does not remain on the upper surface or lateral walls of the pixel isolation structure, but instead flows back to the pixel regions under the action of gravity, so that colour mixing between adjacent pixel regions is effectively prevented, and the light-emitting efficiency of the light-emitting device is improved.

Description

Light emitting device and manufacturing method thereof

Technical field

The present invention relates to the field of optical technologies, and in particular to a light emitting device and a method of fabricating the same.

Background technique

Quantum Dot Light Emitting Device (QLED) is an important breakthrough in the field of display in recent years. Like OLED, it uses the principle of electroluminescence to emit light. Each QLED device is fabricated in each pixel region defined by a pixel isolation layer (Pixel defining layer), and the functional layer group of the QLED generally includes an electron injection layer, an electron transport layer, a light emitting layer, and a hole transport. The layer, the hole injection layer, the functional layer group and the anode and the cathode disposed on both sides thereof constitute a light-emitting structure to jointly realize the light emission of the QLED. The cathode is usually made of silver and the anode is usually made of ITO.

In a light-emitting device, light loss due to total reflection between interfaces causes a decrease in light-emitting efficiency. In the prior art, a light extraction layer is usually provided between electrodes of the light emitting device or outside the electrodes to improve the light extraction efficiency of the light emitting device. However, when the light extraction layer is prepared by a process such as slit coating, spin coating, screen printing, etc., the light extraction layer material is liable to remain on the upper surface and the side surface of the pixel isolation structure; the light extraction is prepared by a printing process. When the layer is layered, it is easy to cause the light extraction layer material to remain on the side surface of the pixel isolation structure, thereby causing light to propagate from one pixel region through the scattering particles of the light extraction layer to another adjacent pixel region, thereby causing between adjacent pixels. Causes color mixing.

Summary of the invention

The main object of the present invention is to provide a light emitting device and a manufacturing method thereof, which solve the technical problem of easy color mixing between adjacent pixel regions in the manufacturing process of the conventional light emitting device.

In order to achieve the above object, according to an aspect of the present invention, a method for fabricating a light emitting device includes the steps of: forming a pixel isolation structure on a substrate, the pixel isolation structure having a plurality of isolated pixel regions, and a pixel isolation structure The bare surface is a hydrophilic surface or a hydrophobic surface; a light extraction solution is disposed on the substrate corresponding to the pixel region to form a light extraction layer, the light extraction solution includes a base material, scattering particles and a solvent, and when the pixel isolation structure is exposed When the surface is a hydrophilic surface, the light extraction solution is a hydrophobic solution, and when the exposed surface of the pixel isolation structure is a hydrophobic surface, the light extraction solution is a hydrophilic solution.

Further, the step of forming the pixel isolation structure includes: forming an isolation substrate, the exposed surface of the isolation substrate constituting the exposed surface of the pixel isolation structure.

Further, the step of forming the pixel isolation structure includes: forming an isolation substrate; forming an isolation film disposed on the upper surface and the side surface of the isolation substrate, the surface of the isolation film constituting the exposed surface of the pixel isolation structure.

Further, when the exposed surface is a hydrophilic surface, the material forming the exposed surface is a hydrophilic photoresist; when the exposed surface is a hydrophobic surface, the material forming the exposed surface is a hydrophobic resin.

Further, when the exposed surface is a hydrophilic surface, the material forming the exposed surface is silicon oxide and/or silicon nitride; when the exposed surface is a hydrophobic surface, the material forming the exposed surface is a hydrophobic resin.

Further, the step of forming the isolation substrate comprises: sequentially disposing a first electrode layer and a photoresist on the surface of the substrate; performing a photolithography process on the photoresist to expose a portion of the surface of the first electrode layer to form a pixel region, The remaining photoresist forms an isolation substrate, and adjacent sidewalls of the isolation substrate intersect in an extended plane away from the substrate, and the isolation substrate between adjacent sidewalls is a spacer.

Further, after the photolithography process, the step of forming the isolation substrate further comprises: etching away part of the isolation strips such that a side surface of the isolation strip away from the substrate is a non-planar surface that is convex away from the substrate, and the non-planar surface is It is composed of a plane segment and/or a curved surface segment having an angle with the upper surface of the first electrode layer, and has an arcuate dome.

Further, a vertical distance from a side surface of the spacer strip away from the first electrode layer to the first electrode layer is 1 to 4 μm.

Further, the light extraction solution comprises a matrix material having a mass percentage of 1 to 20%, 1 to 30% of scattering particles, and 50 to 98% of a solvent.

Further, before the step of forming the pixel isolation structure, the fabricating method further comprises the step of disposing a first electrode layer on the surface of the substrate, wherein the step of forming the light extraction layer comprises: a portion of the first electrode layer corresponding to the pixel region The functional layer group and the second electrode layer are sequentially stacked on the upper or all first electrode layers, and part or all of the first electrode layer, the functional layer group and the second electrode layer corresponding to the pixel region constitute a light emitting structure, and the first electrode layer and The second electrode layers are different and are respectively selected from one of a cathode layer and an anode layer; a light extraction solution is disposed on a surface of the second electrode layer away from the functional layer group to form a light extraction layer.

Further, before the step of forming the pixel isolation structure, the fabricating method further comprises the step of disposing a first electrode layer on the surface of the substrate, wherein the step of forming the light extraction layer comprises: forming the light extraction solution and forming the functional layer group One or more layers of the solution are mixed to form a mixed solution, and the mixed solution is disposed on a part of the first electrode layer corresponding to the pixel region or all of the first electrode layers to form a functional layer group having a light extraction layer, or in a pixel a surface of the first electrode layer corresponding to the region or a surface of all the first electrode layers is provided with a light extraction solution to form a light extraction layer, or on a surface of a portion of the first electrode layer corresponding to the pixel region or all of the first electrode layer Forming a functional layer or a plurality of functional layers of the functional layer group on the surface, and providing a light extraction solution on the functional layer to form a light extraction layer, or on the surface of the portion of the first electrode layer corresponding to the pixel region or all of the first Forming a functional layer group on the surface of the electrode layer, providing a light extraction solution on the functional layer group to form a light extraction layer; forming a second electrode layer on the light extraction layer, and second A first electrode layer and the electrode layer different and each is selected from one cathode layer and an anode layer, wherein the light extraction layer is formed of a conductive light extraction layer.

Further, the process of forming the functional layer group includes sequentially arranging the first injection layer, the first transport layer, the light emitting layer, the second implant layer, and the second transport layer on a portion of the first electrode layer corresponding to the pixel region.

According to another aspect of the present invention, there is provided a light emitting device which is fabricated by the above-described fabrication method.

Further, the light emitting device includes a substrate, a pixel isolation structure disposed on the substrate, and a light extraction layer disposed on the substrate, the pixel isolation structure has a plurality of mutually isolated pixel regions, the light extraction layer is disposed in the pixel region, and the light extraction The maximum distance between the upper surface of the layer and the upper surface of the substrate is H1, the minimum distance between the upper surface of the pixel isolation structure and the upper surface of the substrate is H2, and H1 is less than H2.

Applying the technical solution of the present invention, firstly forming a pixel isolation structure having a hydrophilic or hydrophobic exposed surface, the pixel isolation structure has a plurality of mutually isolated pixel regions, and then coating, printing or printing on a substrate corresponding to the pixel region The light extraction solution, when the exposed surface of the pixel isolation structure is a hydrophilic surface, the light extraction solution is a hydrophobic solution, and when the exposed surface of the pixel isolation structure is a hydrophobic surface, the light extraction solution is a hydrophilic solution, thereby The surface of the pixel isolation structure is made to have different hydrophilicity and hydrophobicity from the light extraction solution, and the light extraction solution does not remain on the upper surface and/or the sidewall of the pixel isolation structure in the step of forming the light extraction layer. It is reflowed into the pixel region under the action of gravity, thereby effectively preventing the light emitted by the light-emitting device in the adjacent pixel region from scattering the light to the adjacent pixel region through the residual light-extracting particles, thereby reducing the color mixing phenomenon and improving the light emission. The luminous efficiency of the device.

In addition to the objects, features and advantages described above, the present invention has other objects, features and advantages. The invention will now be described in further detail with reference to the drawings.

DRAWINGS

The accompanying drawings, which are incorporated in the claims of the claims In the drawing:

1 is a schematic structural view of a light emitting device provided with a light extraction layer provided on a surface of an anode layer according to the present invention;

2 is a schematic structural view of a light emitting device having a light extraction layer in a functional layer group provided by the present invention, wherein the light extraction layer is not shown in the drawing;

3 shows the light extraction layer provided by the present invention disposed between the first electrode layer and the functional layer group, between any two adjacent layers in the functional layer group, or between the functional layer group and the second electrode layer. Schematic diagram of the device;

4 is a view showing a pixel spectrum of a light-emitting device fabricated in an embodiment of the present invention and a comparative example;

FIG. 5 is a schematic view showing the structure of another light-emitting layer provided on the surface of the anode layer provided by the present invention.

detailed description

It should be noted that the embodiments in the present invention and the features in the embodiments may be combined with each other without conflict. The invention will be described in detail below with reference to the drawings in conjunction with the embodiments.

The technical solutions in the embodiments of the present invention are clearly and completely described in the following with reference to the accompanying drawings in the embodiments of the present invention. Is the invention Some embodiments, not all of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of the present invention.

It is to be understood that the terms "first", "second" and the like in the specification and claims of the present invention are used to distinguish similar objects, and are not necessarily used to describe a particular order or order. It will be understood that the data so used may be interchanged where appropriate to facilitate the embodiments of the invention described herein. In addition, the terms "comprises" and "comprises" and "the" and "the" are intended to cover a non-exclusive inclusion, for example, a process, method, system, product, or device that comprises a series of steps or units is not necessarily limited to Those steps or units may include other steps or units not explicitly listed or inherent to such processes, methods, products or devices.

It can be seen from the prior art that in the prior art, when the light extraction layer is prepared by a process such as slit coating, spin coating, screen printing, coating or printing, the light extraction layer material is easily caused on the upper surface of the pixel isolation structure and / or residual of the sidewalls, resulting in a technical problem of easy color mixing between adjacent pixel regions in the fabrication process of existing light-emitting devices. The inventors of the present invention have studied the above problems, and provided a light emitting device and a manufacturing method thereof, the method comprising the steps of: forming a pixel isolation structure on a substrate, the pixel isolation structure having a plurality of pixel regions isolated from each other, and The exposed surface of the pixel isolation structure is a hydrophilic surface or a hydrophobic surface; a light extraction solution is coated, printed or printed on a substrate corresponding to the pixel region to form a light extraction layer, and the light extraction solution includes a base material, scattering particles and a solvent. And when the exposed surface of the pixel isolation structure is a hydrophilic surface, the light extraction solution is a hydrophobic solution, and when the exposed surface of the pixel isolation structure is a hydrophobic surface, the light extraction solution is a hydrophilic solution.

The fabrication method comprises first forming a pixel isolation structure having a hydrophilic or hydrophobic exposed surface, the pixel isolation structure having a plurality of mutually isolated pixel regions, and then coating, printing or printing the light extraction solution on the substrate corresponding to the pixel region. When the exposed surface of the pixel isolation structure is a hydrophilic surface, the light extraction solution is a hydrophobic solution, and when the exposed surface of the pixel isolation structure is a hydrophobic surface, the light extraction solution is a hydrophilic solution, thereby making the pixel The surface of the isolation structure has different hydrophilicity and hydrophobicity with the light extraction solution, and thus the light extraction solution does not remain on the upper surface and/or the side wall of the pixel isolation structure in the step of forming the light extraction layer, but in gravity The image is reflowed into the pixel region, thereby effectively preventing the light emitted by the light emitting device in the adjacent pixel region from scattering the light to the adjacent pixel region through the residual light extraction structure, thereby reducing the color mixing phenomenon and improving the light emitting of the light emitting device. effectiveness.

An exemplary embodiment of a method of fabricating a light emitting device according to the present invention will be described in more detail below. However, the exemplary embodiments may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. It is to be understood that the embodiments are provided so that this disclosure will be thorough and complete, and the concepts of the exemplary embodiments are fully conveyed to those of ordinary skill in the art.

First, a pixel isolation structure is formed on the substrate, the pixel isolation structure has a plurality of mutually isolated pixel regions, and the exposed surface of the pixel isolation structure is a hydrophilic surface or a hydrophobic surface. Preferably, when the exposed surface is a hydrophilic surface, the material forming the exposed surface is at least one of silicon oxide, silicon nitride, and a hydrophilic photoresist (eg, polyimide), wherein the hydrophilic The photoresist contains a hydrophilic group, such as one or more of a carboxyl group, a carboxylate, a hydroxyl group, an amino group, a quaternary ammonium salt, an ester group, a hydrazide group, an amide group or a sulfonic acid group; when the exposed surface When it is a hydrophobic surface, the material forming the bare surface is at least one of hydrophobic resins, wherein the hydrophobic resin contains a hydrophobic group such as an aryl group, an ester, an ether, an amine, One or more of the amide groups, the hydrophobic resin may be a fluorinated polyimide. The preferred materials described above enable the exposed surface of the isolated structure to be relatively hydrophilic or hydrophobic.

The step of forming the pixel isolation structure may include: forming an isolation substrate; forming an isolation film disposed on the upper surface and the side surface of the isolation substrate, the surface of the isolation film constituting the exposed surface of the pixel isolation structure. Preferably, when the exposed surface is a hydrophilic surface, the material forming the exposed surface is silicon oxide and/or silicon nitride; when the exposed surface is a hydrophobic surface, the material forming the exposed surface is a hydrophobic resin, wherein hydrophobic The resin contains a hydrophobic group such as one or more of an aryl group, an ester, an ether, an amine, and an amide group, and the hydrophobic resin may be a fluorinated polyimide. At this time, the separator formed on the surface of the isolation substrate is formed using a hydrophilic material or a hydrophobic material, so that when the light extraction solution and the separator have different hydrophilicity and hydrophobicity, the light extraction layer can be subsequently formed. In the step, the light extraction solution does not remain on the upper surface or the sidewall of the pixel isolation structure, but flows back into the pixel region under the action of gravity, thereby effectively preventing color mixture between adjacent pixel regions.

Other embodiments may be used to form the above-described pixel isolation structure. In a preferred embodiment, the step of forming the pixel isolation structure includes: forming an isolation substrate, the exposed surface of the isolation substrate constituting the exposed surface of the pixel isolation structure. Preferably, the above pixel isolation structure may be an isolation substrate formed of a hydrophilic material or a hydrophobic material. Moreover, preferably, when the exposed surface is a hydrophilic surface, the material forming the exposed surface is a hydrophilic photoresist, wherein the hydrophilic photoresist contains a hydrophilic group such as a carboxyl group, a carboxylate, or a hydroxyl group. One or more of an amino group, a quaternary ammonium salt, an ester group, a hydrazide group, an amide group or a sulfonic acid group, such as polyimide; when the exposed surface is a hydrophobic surface, the material forming the exposed surface is hydrophobic A resin in which a hydrophobic resin contains a hydrophobic group such as one or more of an aryl group, an ester, an ether, an amine, and an amide group, such as a fluorinated polyimide. At this time, the exposed surface of the pixel isolation structure can directly have hydrophilicity or hydrophobicity, thereby not only preventing color mixing between adjacent pixel regions, but also eliminating the process steps of preparing the above isolation film, simplifying the process of the light emitting device. Process.

In the step of forming the pixel isolation structure, the step of forming the isolation substrate may include: sequentially disposing a first electrode layer and a photoresist on a surface of the substrate; performing a photolithography process on the photoresist to make the first electrode layer a portion of the surface is exposed to form a pixel region, and the remaining photoresist forms an isolation substrate. The adjacent sidewalls of the isolation substrate intersect at an extending surface away from the substrate, and the isolation substrate between the adjacent sidewalls is a spacer. The photoresist may be a hydrophilic photoresist or a hydrophobic photoresist, wherein the hydrophilic photoresist may contain a hydrophilic group including a carboxyl group, a carboxylate, a hydroxyl group, an amino group, a quaternary ammonium salt, One or more of an ester group, a hydrazide group, an amide group or a sulfonic acid group, such as a polyimide, the hydrophobic resin may contain one or more of an aryl group, an ester, an ether, an amine, or an amide group. Such as fluorinated polyimide. The photolithography process may specifically include: forming a first electrode layer on the pre-formed substrate, applying a layer of photoresist on the first electrode layer, sequentially exposing and developing according to the prior art, and removing part of the light. The glue is formed to form a pixel region, and the remaining portion of the photoresist forms the above-described isolation substrate having inclined sidewalls disposed on the first electrode layer. Since the above-described isolation substrate formed has inclined side walls, the light extraction solution can be reflowed into the pixel region by gravity in the subsequent step of forming the light extraction layer. When the spacer is an inverted trapezoid, a negative photoresist is selected in the photolithography process; when the spacer is a positive trapezoid, a positive photoresist needs to be selected in the photolithography process. In addition to the above, those skilled in the art also know that the first electrode layer can be disposed separately from the pixel isolation structure, that is, the pixel isolation structure is not disposed on the first electrode layer, but is disposed on the substrate, and at this time, the first electrode The layer is only disposed in the pixel area (this arrangement is not shown in the drawing).

In a preferred embodiment, after the photolithography process, the step of forming the isolation substrate further comprises: etching away part of the isolation strips such that a side surface of the isolation strips away from the substrate is convex away from the substrate. The non-planar, non-planar is composed of a planar segment and/or a curved segment having an angle with the upper surface of the first electrode layer, and has a curved dome. The arc here is an approximate arc, not just a strictly smooth arc. Preferably, the non-planar surface is a curved surface. The above non-planar surface may be naturally formed by a process, and the spacer strip having the above surface can further ensure that the light extraction solution does not remain on the upper surface of the pixel isolation structure in the subsequent step of forming the light extraction layer, but is performed by gravity The lower reflow into the pixel area, thereby effectively preventing color mixing between adjacent pixel areas. More preferably, the vertical distance of the side surface of the spacer from the first electrode layer to the first electrode layer or the substrate is 1-4 μm. Defining the vertical distance of the surface of the spacer strip to the first electrode layer within the above preferred range ensures that the coated solution within the pixel does not overflow into adjacent pixels to cause color mixing.

After the step of forming a pixel isolation structure on the substrate, a light extraction solution is disposed on the substrate corresponding to the pixel region to form a light extraction layer, the light extraction solution includes a base material, scattering particles, and a solvent, and when the exposed surface of the pixel isolation structure is In the case of a hydrophilic surface, the light extraction solution is a hydrophobic solution, and when the exposed surface of the pixel isolation structure is a hydrophobic surface, the light extraction solution is a hydrophilic solution. The above light extraction solution may be disposed by coating, printing or printing, specifically slit coating, spin coating, screen printing or inkjet printing.

The light extraction layer may be disposed outside the electrode layer, such as the light extraction layer disposed on a side of the first electrode layer or the second electrode layer away from the functional layer group. In a preferred embodiment, prior to the step of forming the pixel isolation structure 20, the fabrication method further includes the step of disposing the first electrode layer 410 on the substrate 10, wherein the step of forming the light extraction layer 30 includes: The functional layer group 420 and the second electrode layer 430 are sequentially stacked on a part of the first electrode layer corresponding to the pixel region or all of the first electrode layers, and part or all of the first electrode layer, the functional layer group and the second electrode corresponding to the pixel region The layer constitutes a light emitting structure, and the first electrode layer 410 and the second electrode layer 430 are different and are respectively selected from one of a cathode layer and an anode layer; light extraction is disposed on a surface of the second electrode layer 420 away from the functional layer group 420 The solution forms a light extraction layer 30. The portion of the first electrode layer corresponding to the pixel region means that only a portion of the first electrode layer is disposed corresponding to the pixel region when the pixel isolation structure 20 is disposed on the first electrode layer, as shown in FIG. 1; All the first electrode layers are disposed when the pixel isolation structure 20 is disposed separately from the first electrode layer (ie, the pixel isolation structure 20 is not disposed on the first electrode layer), and all of the first electrode layers are disposed corresponding to the pixel regions, as shown in FIG. 5 . .

In the above preferred embodiment, when the second electrode layer 430 is an anode layer or a cathode layer, the light extraction layer 30 disposed on the outer surface of the second electrode layer 430 may be formed by the above process steps, and the formed light emitting device Figure 1. Since the material of the cathode layer is usually a material having a low light transmittance such as silver, when the second electrode layer 430 is a cathode layer, the thickness of the cathode layer is preferably 25 nm or less. When the thickness of the cathode layer is within the above-mentioned preferred thickness range, light emitted from the light-emitting structure can simultaneously penetrate the cathode layer and the anode layer, that is, a light-emitting device that forms a double-sided light.

The light extraction layer may be disposed between the two electrode layers. In another preferred embodiment, before the step of forming the pixel isolation structure 20, the fabrication method further includes the step of disposing the first electrode layer 410 on the substrate 10, where The step of forming the light extraction layer 30 further includes mixing the light extraction solution with a solution forming any one or more of the functional layer groups to form a mixed solution, and setting the mixed liquid to a portion corresponding to the pixel region. On the electrode layer or all of the first electrode layers, a functional layer group 420 having a light extraction layer 30 is formed; a second electrode layer 430 is formed on the light extraction layer 30, and the second electrode layer 430 and the first electrode layer 410 are different and One selected from the group consisting of a cathode layer and an anode layer, respectively, wherein the formed light extraction layer 30 is electrically conductive Sexual light extraction layer. The light extraction layer 30 can be formed in the functional layer group 420 by the above process steps, thereby eliminating the step of separately preparing the light extraction layer 30, further simplifying the process flow of the light emitting device. Similarly, the portion of the first electrode layer corresponding to the pixel region means that only a portion of the first electrode layer is disposed corresponding to the pixel region when the pixel isolation structure 20 is disposed on the first electrode layer, and the light emitting device formed by using the arrangement manner is As shown in FIG. 2, all the first electrode layers corresponding to the pixel regions refer to all the first electrode layers when the pixel isolation structure 20 is disposed separately from the first electrode layer (ie, the pixel isolation structure 20 is not disposed on the first electrode layer). Corresponding to the pixel area (this setting is not shown in the drawing).

In addition to the above preferred embodiment, the step of forming the light extraction layer 30 may further include: providing a light extraction solution on a surface of a portion of the first electrode layer corresponding to the pixel region or all of the surfaces of the first electrode layer to form the light extraction layer 30. Forming the light-emitting device as shown in FIG. 3, or forming a functional layer or a multi-layer functional layer of the functional layer group 420 on the surface of the portion of the first electrode layer corresponding to the pixel region or on the surface of all of the first electrode layers Providing a light extraction solution on the functional layer to form the light extraction layer 30, or forming a functional layer group 420 on the surface of a portion of the first electrode layer corresponding to the pixel region or on the surface of all of the first electrode layers, in the functional layer group a light extraction solution is disposed on 420 to form a light extraction layer 30; a second electrode layer 430 is formed on the light extraction layer 30, and the second electrode layer 430 and the first electrode layer 410 are different and are respectively selected from the cathode layer and the anode layer. One in which the formed light extraction layer 30 is a light extraction layer having conductivity. The light-emitting device is an electroluminescent device, and when the light extraction layer is disposed between the two electrode layers, the light extraction layer needs to have conductivity in order to achieve good light emission. Similarly, the partial first electrode layer corresponding to the pixel region means that only the first electrode layer is disposed corresponding to the pixel region when the pixel isolation structure 20 is disposed on the first electrode layer, and all of the first regions corresponding to the pixel region are The electrode layer means that all the first electrode layers are disposed corresponding to the pixel regions when the pixel isolation structure 20 is disposed separately from the first electrode layer (ie, the pixel isolation structure 20 is not disposed on the first electrode layer).

In a preferred embodiment, the maximum distance between the upper surface of the light extraction layer 30 and the upper surface of the substrate 10 is less than the minimum distance between the upper surface of the pixel isolation structure 20 and the upper surface of the substrate 10, ie, relative to the substrate. In each of the above embodiments, the height of the upper surface of the light extraction layer is lower than the height of the upper surface of the pixel isolation structure, so that the light emitted by the light emitting device in the adjacent pixel region can be more effectively prevented from scattering the light to the adjacent region through the light extraction layer. The pixel area reduces the color mixing phenomenon and improves the luminous efficiency of the light emitting device.

More preferably, the above-described light extraction layer is formed in each of the pixel regions to form a plurality of mutually isolated light extraction layers. Since the isolation substrate has inclined side walls (side walls, that is, side surfaces), the light extraction solution does not remain on the upper surface or side of the pixel isolation structure when the light extraction solution is applied, printed, or printed to each pixel region. The wall is returned to the pixel region under the action of gravity, so that a plurality of light-emitting structures separated by the pixel isolation structure are formed in the light-emitting device, thereby enabling the light-emitting device to be emitted by adjusting the color of the light emitted from each of the light-emitting structures. The light meets the actual color needs.

In the step of disposing the first electrode layer on the substrate and forming the second electrode layer on the portion of the first electrode layer corresponding to the pixel region, the preparation process of the cathode layer and the anode layer may be selected according to the prior art, preferably, the above The preparation process is sputtering or evaporation.

The structure of the above-mentioned functional layer group can be set according to actual needs. In a preferred embodiment, the process of forming a functional layer group includes: sequentially setting a first injection layer on a portion of the first electrode layer corresponding to the pixel region, a first transport layer, a light emitting layer, a second implant layer, and a second transport layer. The light emitting device formed by the functional layer group having the above structure is QLED or OLED (Organic Light Emitting Diode), in which case the light extraction layer formed by the coating, printing or printing process can be located in a QLED or OLED.

In the above functional layer group, when the first electrode layer is an anode layer and the second electrode layer is a cathode layer, the first injection layer is a hole injection layer, and the first transmission layer is a hole transport layer; The second electrode layer is a cathode layer, the second injection layer is an electron injection layer, and the second transmission layer is an electron transport layer. When the first electrode layer is a cathode layer and the second electrode layer is an anode layer, the first injection layer is an electron injection layer, the first transmission layer is an electron transport layer, the second injection layer is a hole injection layer, and the second transmission layer The layer is a hole transport layer.

In the step of forming the above-mentioned light emitting structure, the process of preparing the functional layer group in the above QLED or OLED device may be slit coating, spin coating, screen printing or inkjet printing, preferably inkjet printing technology, in which case The functional layer material is liquid in the form of a solvent, and each of the liquid functional layer materials may be a zinc oxide material forming an electron injecting/transporting layer, a quantum dot material forming a light emitting layer, and a polyethylene dioxythiophene forming a hole injecting layer: poly Styrene sulfonate (PEDOT: PSS) and a polyvinyl carbazole (PVK) material forming a hole transport layer. The pixel isolation structure is capable of confining the liquid functional layer material ejected by the inkjet printing in the pixel region, and after the printing, the solvent in the liquid functional layer material is volatilized to become the dried functional layers.

In the above light extraction solution, preferably, the light extraction solution includes a matrix material having a mass percentage of 1 to 20%, 1 to 30% of scattering particles, and 50 to 98% of a solvent. Also, preferably, the difference between the refractive index of the base material and the refractive index of the scattering particles is greater than or equal to 0.5. The refractive index of the base material and the refractive index of the scattering particles are limited to the above preferred range, and the scattering ability and light extraction efficiency of the formed light extraction layer can be further improved, and the stronger the scattering ability of the light extraction layer, the higher the light extraction efficiency. high. The above light extraction solution means that the scattering particles or the matrix material are dispersed in a solvent.

When the light extraction layer is disposed on a side of the electrode layer away from the functional layer group, the base material is a non-conductive polymer, such as polyester acrylate, urethane acrylate, polyacrylate, epoxy acrylate, polyether acrylate. One or more of materials such as esters and acetyl cyanurate for immobilizing scattering particles. When the light extraction layer is disposed between the two electrode layers, the base material is a conductive polymer, such as one of polyacetylene, polyaniline, doped polyethylene, polypyrrole, polythiophene, and conductive epoxy resin. Or a plurality; if it is one or more layers of the functional layer group, the matrix material is a functional material in the functional layer, and the functional material is, for example, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid, 2, 3,5,6-tetrafluoro-7,7,8,8-tetracyanodimethyl p-benzoquinone, polyvinylcarbazole, N,N'-diphenyl-N,N'-(3-methyl Phenyl)-1,1'-biphenyl-4,4'-diamine (DOFL-TPD), N', N'-bis(4-butylphenyl), -N', N'-double ( Phenyl)benzidine), N',N'-bis(3-methylphenyl), -N',N'-bis(phenyl)-9,9-dioctylfluorene, poly((9, 9-dioctylindole-2,7-diyl)-co (4,4'-(N-(4-sec-butylphenyl)diphenylamine)), 2-(4-biphenyl)- 5-phenyl-1,3,4-oxadiazole), 8-hydroxyquinoline aluminum, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl -4H-1,2,4-triazole, 4,7-diphenyl-1,10-phenanthroline, (1,3-bis[2-(2,2'-bipyridin-6-yl)) -1,3,4-oxadiazol-5-yl]benzene, (1,4-bis[2-(2,2'-bipyridin-6-yl)-1,3,4-oxa In the materials of oxazol-5-yl]benzene and (2,6-bis[2-(2,2'-bipyridin-6-yl)-1,3,4-oxadiazol-5-yl]benzene One or more.

The affinity of the light extraction solution is mainly determined by the solvent thereof. When the light extraction solution is a hydrophilic solution, the solvent of the hydrophilic solution may include water, formamide, dimethyl sulfoxide, acetonitrile, dimethylformamide. Any one of methanol, ethanol, isopropanol, acetone, n-butanol, tetrahydrofuran, methyl formate, ethyl acetate, butyl acetate, methyl ethyl ketone, n-butyl ether, propylene glycol methyl ether, and propylene glycol methyl ether acetate. Or a plurality; when the light extraction solution is a hydrophobic solution, the hydrophobic solution The solvent may include chloroform, chlorobenzene, xylene, toluene, benzene, n-hexane, cyclohexane, n-heptane, octane, decane, undecane, dodecane, n-tetradecane, hexadecane and n. Any one or more of octane and ethyl benzoate, but not limited to the above-mentioned species, a person skilled in the art can select a suitable solvent type according to process factors such as evaporation area, vacuum degree and temperature in the actual preparation process. The use of the component having the above content enables the formed light extraction solution to have higher hydrophilicity or hydrophobicity, thereby further ensuring that the light extraction solution does not remain on the upper surface or side wall of the pixel isolation structure, but in gravity It flows back into the pixel area.

In order to further ensure the light extraction effect of the formed light extraction layer, and avoid the problem of leakage or short circuit caused by excessive roughness of the surface of the light extraction layer, it is preferred that the average particle diameter of the light scattering particles in the light extraction solution is between 20 and 500 nm, further It is preferably between 50 and 400 nm. Moreover, since the scattering particles occupy a larger volume content of the light extraction layer, the larger the scattering effect, the better the light extraction effect; however, while the content of the scattering particles increases, the surface roughness of the film layer becomes larger, which increases the risk of leakage. Therefore, in order to prevent the particles from agglomerating due to excessive light scattering particles or causing protrusions on the surface of the light extraction layer to pierce other structural layers, thereby causing leakage or short circuit problems, it is preferred that the volume of the scattering particles accounts for at least the volume of the light extraction layer. 20%, preferably at least 50%, and the volume of the scattering particles in the present application refers to the sum of the volumes of all the scattering particles dispersed in one light extraction layer.

In order to further ensure that the addition of the light scattering particles can increase the luminous efficiency of the light emitting device, the light scattering particles are preferably titanium oxide particles, cerium oxide particles, cerium oxide particles, zirconium oxide particles, aluminum oxide particles, tungsten oxide particles, or cerium oxide. Particles, vanadium oxide particles, molybdenum oxide particles, silicon oxide particles, chromium oxide particles, iron oxide particles, copper oxide particles, lead oxide particles, manganese oxide particles, tin oxide particles, zinc oxide particles, lead sulfide particles, cerium oxide particles, One or more of zinc sulfide particles, cadmium sulfide particles, zinc telluride particles and cadmium selenide particles.

According to another aspect of the present invention, there is provided a light emitting device prepared by the above-described fabrication method. As shown in FIGS. 1 to 3, the light emitting device includes a substrate 10 and a pixel isolation structure 20 and light extraction provided on the substrate 10. The layer 30, the pixel isolation structure 20 has a plurality of mutually isolated pixel regions, the light extraction layer 30 is disposed in the pixel region, and the light extraction layer 30 includes a light extraction substrate and scattering particles disposed in the light extraction substrate, wherein the light extraction layer It is formed by volatilizing the solvent of the light extraction solution. In addition to using a drying process to volatilize the solvent, when the substrate material needs to be cured, the light extraction solution may be treated by a curing process to form a light extraction layer, wherein the curing process may be photocuring or heat curing.

In the above light-emitting device of the present invention, when the surface of the pixel isolation structure is a hydrophilic material, the material forming the light extraction layer is a hydrophobic solution, and when the surface of the pixel isolation structure is a hydrophobic material, the material forming the extraction layer It is a hydrophilic solution, so that the pixel isolation structure and the light extraction solution can have different hydrophilic hydrophobicity in the preparation process of the extraction layer, so that the light extraction solution does not remain on the upper surface and/or the sidewall of the pixel isolation structure. Rather, it flows back into the pixel region under the action of gravity, thereby effectively preventing the light emitted by the light-emitting device in the adjacent pixel region from scattering the light to the adjacent pixel region through the light extraction structure, thereby reducing the color mixing phenomenon and improving the color. Luminous efficiency of the light emitting device.

In order to more effectively prevent color mixing between adjacent pixel regions, in a preferred embodiment, the maximum distance between the upper surface of the light extraction layer and the upper surface of the substrate is H1, the upper surface of the pixel isolation structure and the substrate The minimum distance between the upper surfaces is H2, and H1 is less than H2. The light emitting device may further include a first electrode layer, a functional layer group and a second electrode layer which are sequentially stacked on the substrate surface corresponding to the pixel region, wherein the functional layer group includes one or more functional layers, wherein the light extraction layer It may be disposed between the first electrode layer and the substrate, or disposed on a side of the second electrode layer away from the functional layer; It may also be disposed between the first electrode layer and the second electrode layer, such as between the first electrode layer and the functional layer group, or in one or more functional layers of the functional layer group (the functional layer also has light extraction) The function of the layer), between any two adjacent functional layers of the plurality of functional layers of the functional layer group, between the functional layer group and the second electrode layer.

The method for fabricating the light-emitting device provided by the present application will be further described below in conjunction with the examples and comparative examples.

Example 1

The light-emitting device produced in this embodiment is shown in FIG. 1 , and the manufacturing method thereof comprises the following steps:

A cathode layer is formed on the substrate by evaporation, and a photoresist is coated on the cathode layer, and then exposed and developed sequentially to form a pixel isolation structure. The pixel isolation structure has three mutually isolated pixel regions, and the pixel is isolated. The exposed surface of the structure is a hydrophilic surface. The adjacent sidewalls of the isolation substrate in the pixel isolation structure are perpendicular to the substrate, the isolation substrate between the adjacent sidewalls is a spacer, and the side surface of the spacer away from the substrate is flat;

An electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, a hole injection layer, and an anode layer are sequentially stacked on a portion of the cathode layer corresponding to the pixel region, wherein the light-emitting layer is formed by an inkjet printing technique, and the light-emitting layer is formed by sputtering The plating technique forms the anode layer described above, and the remaining layers are formed by a slit coating technique. A hydrophobic light extraction solution is then applied to the surface of the anode layer remote from the functional layer set to form a light extraction layer.

Wherein, the material forming the exposed surface is polyimide, the light extraction solution comprises 1 wt% of TiO ₂ , 20 wt% of urethane acrylate and 79 wt% of toluene, and the material forming the cathode electrode layer is Ag, forming electron injection/transport The material of the layer is zinc oxide, the material forming the hole injection layer is polyethylene dioxythiophene: polystyrene sulfonate, the material forming the hole transport layer is polyvinyl carbazole, and the anode electrode layer is ITO anode.

Moreover, the material of the light-emitting layer in the intermediate pixel region of the pixel isolation structure comprises a red light quantum dot having an emission wavelength of 635 nm and an oleic acid ligand coordinated to the surface of the quantum dot, and the light-emitting layer is located in a pixel region on both sides of the intermediate pixel region. Materials include green quantum dots with an emission wavelength of 525 nm.

Example 2

The light-emitting device produced in this embodiment is shown in FIG. 3, and the manufacturing method thereof comprises the following steps:

a hole injection layer, a hole transport layer, a light-emitting layer, an electron injection layer, and an electron transport layer and an anode layer are sequentially stacked on a portion of the cathode layer corresponding to the pixel region, wherein the light-emitting layer is formed by an inkjet printing technique, and the light-emitting layer is formed by sputtering The plating technique forms the anode layer described above, and the remaining layers are formed by a slit coating technique. Before the hole injection layer is formed, a hydrophobic light extraction solution is coated on the surface of the cathode layer remote from the substrate to form a light extraction layer disposed between the cathode layer and the hole injection layer.

Wherein, the material forming the exposed surface is polyimide, and the light extraction solution comprises a light extraction solution comprising 30 wt% of TiO ₂ , 1 wt% of polythiophene and 69 wt% of ethyl benzoate, and the material forming the cathode electrode layer is Ag. And the thickness of the cathode electrode layer is 20 nm, the material forming the electron injection/transport layer is zinc oxide, the material forming the hole injection layer is polyvinyl carbazole, and the material forming the hole transport layer is polyethylene dioxythiophene, and The anode electrode layer is an ITO anode.

Example 3

The light-emitting device produced in this embodiment is shown in FIG. 2, and the manufacturing method thereof comprises the following steps:

A cathode layer is formed on the substrate by evaporation, and a photoresist is coated on the cathode layer, and then exposed and developed sequentially to form a pixel isolation structure. The pixel isolation structure has three mutually isolated pixel regions, and the pixel is isolated. The exposed surface of the structure is a hydrophobic surface. In the pixel isolation structure, the adjacent sidewalls of the isolation substrate are perpendicular to the substrate, the isolation substrate between the adjacent sidewalls is a spacer, and the side surface of the spacer away from the substrate is a plane. ;

An electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, a hole injection layer, and an anode layer are sequentially stacked on a portion of the cathode layer corresponding to the pixel region, wherein the light-emitting layer is formed by an inkjet printing technique, and the light-emitting layer is formed by sputtering The plating technique forms the anode layer described above, and the remaining layers are formed by a slit coating technique. In the step of forming the above-described anode electrode layer, a hydrophilic light extraction solution is mixed with a material forming the anode electrode layer to form a mixed liquid, and a light extraction layer provided in the anode electrode layer is formed.

Wherein, the material forming the exposed surface is fluorinated polyimide, and the light extraction solution comprises a light extraction solution comprising 9 wt% of TiO ₂ , 1 wt% of polythiophene and 90 wt% of formamide, and the material forming the cathode electrode layer is Ag. The material forming the electron injecting/transporting layer is zinc oxide, the material forming the hole injecting layer is polyethylene dioxythiophene: polystyrene sulfonate, the material forming the hole transporting layer is polyvinyl carbazole, and the anode electrode The layer is an ITO anode.

The material of the light-emitting layer in the intermediate pixel region of the pixel isolation structure comprises a red light quantum dot having an emission wavelength of 635 nm and an oleic acid ligand coordinated to the surface of the quantum dot, and the material of the light-emitting layer in the pixel region located on both sides of the intermediate pixel region includes The emission wavelength is 525 nm green quantum dots.

Example 4

The light-emitting device produced in this embodiment is as shown in FIG. 1, and the manufacturing method thereof is different from that in the first embodiment in that:

The exposed surface of the pixel isolation structure is a hydrophobic surface, and the material forming the exposed surface is fluorinated polyimide;

In the pixel isolation structure, the extending surfaces of the adjacent sidewalls of the isolation substrate intersect in a direction away from the substrate, and the isolation substrate between the adjacent sidewalls is a spacer strip, and a side surface of the spacer strip away from the substrate is away from the substrate. a convex curved surface, and the maximum vertical distance from the surface to the cathode layer is 5 μm;

The light extraction solution was a hydrophilic solution, and the light extraction solution included 9 wt% of TiO ₂ , 1 wt% of urethane acrylate, and 90 wt% of butanone.

Example 5

The light-emitting device produced in this embodiment is shown in FIG. 3, and the manufacturing method thereof is different from that in Embodiment 2 in that:

In the pixel isolation structure, the extending surfaces of the adjacent sidewalls of the isolation substrate intersect in a direction away from the substrate, and the isolation substrate between the adjacent sidewalls is a spacer strip, and a side surface of the spacer strip away from the substrate is away from the substrate. a convex curved surface, and the maximum vertical distance from the surface to the cathode layer is 1 μm;

The light extraction solution was a hydrophilic solution, and the light extraction solution included 9 wt% of TiO ₂ , 1 wt% of polypyrrole, and 90 wt% of butanone.

Example 6

The light-emitting device produced in this embodiment is shown in FIG. 2, and the manufacturing method thereof is different from that in Embodiment 3 in that:

The exposed surface of the pixel isolation structure is a hydrophilic surface, and the material forming the exposed surface is polyimide;

In the pixel isolation structure, the extending surfaces of the adjacent sidewalls of the isolation substrate intersect in a direction away from the substrate, and the isolation substrate between the adjacent sidewalls is a spacer strip, and a side surface of the spacer strip away from the substrate is away from the substrate. a convex curved surface, and the maximum vertical distance from the surface to the cathode layer is 4 μm;

The light extraction solution is a hydrophobic solution, and the light extraction solution includes a light extraction solution including 9 wt% of TiO ₂ , 1 wt% of polypyrrole, and 90 wt% of ethyl benzoate.

Comparative example 1

The light-emitting device produced by the present comparative example is as shown in FIG. 1, and the manufacturing method thereof is different from that of the embodiment 4 in that:

The exposed surface of the pixel isolation structure is a hydrophilic surface, and the material forming the exposed surface is polyimide.

The performance of the light-emitting device fabricated in each of the above examples and comparative examples was tested by F STAR Optical Measurement Systems. The pixel spectrum of the test was as shown in FIG. 4, and the abscissa is the wavelength (400-800 nm). The coordinates are the intensity of light at a current density of 1 mA/cm ² . As can be seen from the figure, each of Examples 1 to 6 has a peak only between 600 and 700 nm, so that there is no color mixing phenomenon; and Comparative Example 1 has a peak not only between 600 and 700 nm but also between 500 and 600 nm. There are also peaks, that is, red and green light appear simultaneously due to the phenomenon of color mixing.

From the above description, it can be seen that the above-described embodiments of the present invention achieve the following technical effects:

1. In the step of forming the light extraction layer, the light extraction solution does not remain on the upper surface or the sidewall of the pixel isolation structure, but flows back into the pixel region under the action of gravity, thereby effectively preventing the adjacent pixel regions from being Color mixing improves the luminous efficiency of the light emitting device;

2. The exposed surface of the pixel isolation structure can directly have hydrophilicity or hydrophobicity, thereby not only preventing color mixing between adjacent pixel regions, but also eliminating the process steps of preparing the above isolation film, simplifying the process flow of the light emitting device. ;

3. The present invention further simplifies the process flow of the light-emitting device by forming the light extraction layer in the functional layer group, thereby eliminating the step of separately preparing the light extraction layer.

The above description is only the preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes can be made to the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and scope of the present invention are intended to be included within the scope of the present invention.

Claims

A method for fabricating a light emitting device, comprising the steps of:

Forming a pixel isolation structure on the substrate, the pixel isolation structure having a plurality of mutually isolated pixel regions, and the exposed surface of the pixel isolation structure is a hydrophilic surface or a hydrophobic surface;

Providing a light extraction solution on the substrate corresponding to the pixel region to form a light extraction layer, the light extraction solution comprising a base material, scattering particles and a solvent, and when the exposed surface of the pixel isolation structure is hydrophilic When the surface is a surface, the light extraction solution is a hydrophobic solution, and when the exposed surface of the pixel isolation structure is a hydrophobic surface, the light extraction solution is a hydrophilic solution.
The method according to claim 1, wherein the step of forming the pixel isolation structure comprises:

An isolation substrate is formed, the exposed surface of the isolation substrate forming the exposed surface of the pixel isolation structure.
The method according to claim 1, wherein the step of forming the pixel isolation structure comprises:

Forming an isolation matrix;

A separator is disposed on the upper surface and the side surface of the isolation substrate, and a surface of the separator constitutes a bare surface of the pixel isolation structure.
The manufacturing method according to claim 2, wherein

When the exposed surface is a hydrophilic surface, the material forming the exposed surface is a hydrophilic photoresist;

When the exposed surface is a hydrophobic surface, the material forming the exposed surface is a hydrophobic resin.
The manufacturing method according to claim 3, wherein

When the exposed surface is a hydrophilic surface, the material forming the exposed surface is silicon oxide and/or silicon nitride;

When the exposed surface is a hydrophobic surface, the material forming the exposed surface is a hydrophobic resin.
The manufacturing method according to claim 2 or 3, wherein the step of forming the isolation substrate comprises:

Forming a first electrode layer and a photoresist on the surface of the substrate;

Performing a photolithography process on the photoresist to expose a portion of the surface of the first electrode layer to form the pixel region, and the remaining photoresist forms the isolation substrate, adjacent to the isolation substrate The sidewalls intersect in an extending direction away from the substrate, and the isolation substrate between the adjacent sidewalls is a spacer.
The manufacturing method according to claim 6, wherein after the photolithography process, the step of forming the isolation substrate further comprises:

Etching a portion of the spacer strip such that a side surface of the spacer strip away from the substrate is a non-planar surface protruding away from the substrate, the non-planar layer and the first electrode layer The upper surface is composed of a planar section having an angle and/or a curved section, and has an arcuate dome.
The manufacturing method according to claim 7, wherein a vertical distance of a side surface of the spacer strip away from the first electrode layer to the first electrode layer or the substrate is 1 to 4 μm.
The manufacturing method according to any one of claims 1 to 5, wherein the light extraction solution comprises a matrix material having a mass percentage of 1 to 20%, 1 to 30% of scattering particles, and 50 to 98%. Solvent.
The manufacturing method according to any one of claims 1 to 5, wherein before the step of forming the pixel isolation structure, the fabricating method further comprises disposing a first electrode layer on a surface of the substrate Step, the step of forming the light extraction layer at this time includes:

And sequentially stacking the functional layer group and the second electrode layer on the first electrode layer or all of the first electrode layers corresponding to the pixel region, and partially or all of the first electrode corresponding to the pixel region The electrode layer, the functional layer group and the second electrode layer constitute a light emitting structure, and the first electrode layer and the second electrode layer are different and are respectively selected from one of a cathode layer and an anode layer;

The light extraction solution is disposed on a surface of the second electrode layer remote from the functional layer group to form the light extraction layer.
The manufacturing method according to any one of claims 1 to 5, wherein before the step of forming the pixel isolation structure, the fabricating method further comprises disposing a first electrode layer on a surface of the substrate Step, the step of forming the light extraction layer at this time includes:

And mixing the light extraction solution with a solution forming any one or more of the functional layer groups to form a mixed solution, and setting the mixed liquid on a part of the first electrode layer corresponding to the pixel region or all Forming the functional layer group having the light extraction layer on the first electrode layer, or

Providing the light extraction solution on a surface of the first electrode layer or a surface of all of the first electrode layers corresponding to the pixel region to form the light extraction layer, or

Forming a functional layer or a plurality of functional layers of the functional layer group on a portion of the first electrode layer or a surface of the first electrode layer corresponding to the pixel region, on the functional layer Setting a light extraction solution to form the light extraction layer, or

Forming a functional layer group on a surface of the first electrode layer corresponding to the pixel region or on a surface of all of the first electrode layers, and setting a light extraction solution on the functional layer group to form the light Extraction layer

Forming a second electrode layer on the light extraction layer, and the second electrode layer and the first electrode layer are different and are respectively selected from one of a cathode layer and an anode layer,

The light extraction layer formed is a light extraction layer having conductivity.
The manufacturing method according to claim 11, wherein the forming the functional layer group comprises:

A first implant layer, a first transfer layer, a light emitting layer, a second implant layer, and a second transfer layer are sequentially disposed on a portion of the first electrode layer corresponding to the pixel region.
A light emitting device, which is produced by the manufacturing method according to any one of claims 1 to 12.
The light emitting device according to claim 13, wherein the light emitting device comprises a substrate, a pixel isolation structure disposed on the substrate, and a light extraction layer disposed on the substrate, the pixel isolation structure having a plurality of a mutually isolated pixel region, a light extraction layer is disposed in the pixel region, and a maximum distance between an upper surface of the light extraction layer and an upper surface of the substrate is H1, an upper surface of the pixel isolation structure The minimum distance from the upper surface of the substrate is H2, and H1 is less than H2.