WO2017148034A1 - 液晶显示面板 - Google Patents

液晶显示面板 Download PDF

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Publication number
WO2017148034A1
WO2017148034A1 PCT/CN2016/084759 CN2016084759W WO2017148034A1 WO 2017148034 A1 WO2017148034 A1 WO 2017148034A1 CN 2016084759 W CN2016084759 W CN 2016084759W WO 2017148034 A1 WO2017148034 A1 WO 2017148034A1
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Prior art keywords
substrate
layer
liquid crystal
crystal display
display panel
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Ceased
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PCT/CN2016/084759
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English (en)
French (fr)
Inventor
陈玉霞
贺超
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US15/304,252 priority Critical patent/US20180180955A1/en
Publication of WO2017148034A1 publication Critical patent/WO2017148034A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133302—Rigid substrates, e.g. inorganic substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136218—Shield electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Definitions

  • the present invention relates to the field of liquid crystal display, and more particularly to a liquid crystal display panel.
  • next-generation mobile display technologies are moving toward high image quality, high resolution, thinness and low power consumption.
  • LTPS Low Temperature Poly-silicon technology is popular among consumers for its superior high image quality, high resolution, ultra-lightweight and low power consumption.
  • LTPS technology is gradually replacing traditional a-Si TFT technology has become the mainstream of next-generation display technology.
  • a metal occlusion layer 11 (LS:Light) needs to be formed on the side of the glass substrate 10 away from the polarizer 12. Shield), the metal shielding layer 11 covers the device region to prevent light leakage current from being generated, and the device region may be a TFT region.
  • the metal shielding layer 11 has a certain height and a tapered inclination angle.
  • the isolation layer 14 of the polysilicon layer 13 (the isolation layer 14 is, for example, a silicon dioxide layer 142 or a silicon nitride layer 141) is covered in a tapered shape.
  • the inclined region also forms a tapered slope so that the polysilicon layer 13 is liable to cause ESD electrostatic damage to the metal shielding layer 11 at the tapered slope (as shown in Fig. 1), resulting in loss of yield.
  • the technical problem to be solved by the present invention is to provide a liquid crystal display panel capable of suppressing electrostatic damage of a polysilicon layer and a shielding layer while saving a process of the liquid crystal panel and reducing cost.
  • the present invention provides a liquid crystal display panel including a substrate, a polarizer disposed on a surface of the substrate, and a device disposed on another surface of the substrate, wherein the device forms a device region, wherein Further comprising an occlusion layer disposed inside the polarizer or on the upper surface of the polarizer or the lower surface of the polarizer, the occlusion layer blocking the device region to prevent light leakage current, the device being a thin film transistor array
  • the other surface of the substrate is provided with a polysilicon layer, the polysilicon layer is doped to form a channel region of the thin film transistor array, and an isolation layer is disposed between the polysilicon layer and the substrate, and the isolation layer is Silicon dioxide layer or silicon nitride layer or a combination of the two
  • the present invention also provides a liquid crystal display panel comprising a substrate, a polarizer disposed on a surface of the substrate, and a device disposed on another surface of the substrate, the device forming a device region, and further comprising a shielding layer. It is disposed inside the polarizer or on the upper surface of the polarizer or the lower surface of the polarizer, and the shielding layer blocks the device region to prevent light leakage current from being generated.
  • the device is a thin film transistor array.
  • a polysilicon layer is disposed on the other surface of the substrate, and the polysilicon layer is doped to form a channel region of the thin film transistor array.
  • an isolation layer is disposed between the polysilicon layer and the substrate.
  • the isolation layer is a silicon dioxide layer or a silicon nitride layer or a combination of the two.
  • the substrate is a TFT substrate
  • the liquid crystal display panel further includes a CF substrate facing the TFT substrate, and a liquid crystal layer is disposed between the TFT substrate and the CF substrate.
  • a polarizer is disposed on a surface of the CF substrate on a side away from the TFT substrate.
  • the substrate is a glass substrate.
  • the shielding layer is a metal shielding layer.
  • the invention has the advantages that the shielding layer is formed on the polarizer to block the device region, the polysilicon layer is formed on the shielding layer having a certain thickness and the tapered inclination angle, and the shielding layer is separately formed from the polysilicon layer, which can avoid the prior art.
  • the surface of the shielding layer is made of polysilicon layer to cause electrostatic damage between the polysilicon and the shielding layer, and the metal shielding layer of the traditional LTPS manufacturing process is reduced, which saves a process and reduces the production cost.
  • FIG. 1 is a schematic view showing the position of an occlusion layer in a conventional LTPS fabrication process
  • FIG. 2 is a schematic view showing the position of a shielding layer of the liquid crystal display panel of the present invention.
  • the specific embodiment adopts a TFT substrate of LTPS technology as an example for explanation.
  • the liquid crystal display panel includes a substrate 20, a polarizer 21 disposed on a surface of the substrate 20, and a device (not shown) disposed on the other surface of the substrate 20.
  • the device forms a device region.
  • the substrate 20 is a glass substrate, and the substrate 20 is a TFT substrate.
  • a thin film transistor array (not shown in the drawing) is formed on a surface of the TFT substrate on the side away from the polarizer 21.
  • the device is the thin film transistor array, and the device region is a thin film transistor array region.
  • a polysilicon layer 25 is formed on the surface of the substrate 20, and the polysilicon layer 25 may be doped to form a channel region of the thin film transistor array.
  • an isolation layer 24 is further formed between the substrate 20 and the polysilicon layer 25, and the isolation layer 24 may be a silicon dioxide layer or a silicon nitride layer or a combination of the two.
  • the isolation layer 24 is a silicon nitride layer 241 and a silicon dioxide layer 242 disposed in sequence away from the substrate 20.
  • a polysilicon layer 25 is disposed on the surface of the silicon dioxide layer 242.
  • the isolation layer 24 and the polysilicon layer 25 are directly disposed on the surface of the substrate 20, and the shielding layer is not disposed on the surface of the substrate 20 as described in the prior art, there is no protrusion caused by the shielding layer, thereby avoiding polysilicon. Electrostatic damage between layer 25 and the occlusion layer.
  • the polarizing film 21 or the upper surface of the polarizing plate 21 or the polarizing plate 21 The lower surface is provided with a shielding layer 26 that blocks the device area to prevent light leakage current from being generated.
  • the shielding layer 26 is disposed inside the polarizer 21 .
  • the shielding layer 26 is directly formed inside the polarizing film 21 or the upper surface of the polarizing plate 21 or the lower surface of the polarizing plate 21.
  • the shielding layer 26 may be a metal layer or a non-metal layer, as long as the light leakage current can be prevented from occurring, which is not limited by the present invention.
  • the structure and fabrication material of the occlusion layer 26 can be obtained by those skilled in the art from the occlusion layer in the existing LTPS technology.
  • the liquid crystal display panel further includes a CF substrate (not shown) opposite to the TFT substrate, and a liquid crystal layer is disposed between the TFT substrate and the CF substrate ( Not shown in the drawing, a polarizing plate (not shown in the drawing) is disposed on a surface of the CF substrate on a side away from the TFT substrate.
  • the structure of the liquid crystal display panel is a conventional structure in the art, and will not be described herein.
  • CMOS LTPS The FFS technology is taken as an example to exemplify the method for fabricating the liquid crystal display panel of the present invention to further explain the structure of the liquid crystal display panel of the present invention.
  • the manufacturing method of the liquid crystal display panel of the CMOS LTPS FFS technology includes the following steps:
  • the shielding layer of the liquid crystal display panel of the present invention is applicable to the TFT backplane product design of the LTPS, and is also applicable to the CMOS/NMOS/Top. Gate product design; at the same time, the occlusion layer of the liquid crystal display panel of the present invention is not only applicable to the FFS structure, but also applies to other display structures such as IPS, and is also applicable to in cells.
  • the product design of the touch structure is not only applicable to the FFS structure, but also applies to other display structures such as IPS, and is also applicable to in cells.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种液晶显示面板，包括一基板（20）、设置在所述基板（20）一表面的偏光片（21）及设置在所述基板（20）另一表面的器件，所述器件形成器件区域，还包括一遮挡层（26），设置在所述偏光片（21）内部或偏光片（21）上表面或偏光片（21）下表面，所述遮挡层（26）遮挡所述器件区域，以防止光漏电流产生。在偏光片（21）上制作遮挡层（26）遮挡器件区域，避免在具有一定厚度及锥形倾斜角度的遮挡层（26）上制作多晶硅层（25），将遮挡层（26）与多晶硅层（25）分开制作，可以避免现有技术中在遮挡层（26）表面制作多晶硅层（25）而造成的多晶硅与遮挡层（26）之间的静电击伤，同时减少了传统LTPS制作工艺的金属遮挡层的制作，节省了一道制程，降低了生产成本。

Description

液晶显示面板 技术领域
本发明涉及液晶显示领域，尤其涉及一种液晶显示面板。
 背景技术
随着移动显示的日益普及，新一代移动显示技术向高画质、高分辨率、轻薄及低功耗发展。例如，LTPS（Low Temperature Poly-silicon）技术以其优越的高画质、高分辨率、超轻薄及低功耗等性能备受广大消费者喜爱，LTPS技术正在逐渐取代传统a-Si TFT技术，成为新一代显示技术主流。
参见图1，传统LTPS制作过程中需要在玻璃基板10远离偏光片12的一侧上制作一层金属遮挡层11（LS：Light Shield），所述金属遮挡层11将器件区域覆盖，防止光漏电流产生，所述器件区域可以为TFT区域。但金属遮挡层11有一定高度和锥形倾斜角度，后续制作TFT时，多晶硅层13的隔离层14（所述隔离层14例如为二氧化硅层142或氮化硅层141）覆盖在锥形倾斜区域，也会形成锥形倾斜，使得在锥形倾斜处多晶硅层13容易与金属遮挡层11发生ESD静电击伤（如图1所示），造成良率损失。
 技术问题
本发明所要解决的技术问题是，提供一种液晶显示面板，其能够抑制多晶硅层与遮挡层的静电击伤，同时节省液晶面板的制程，降低成本。
 技术解决方案
为了解决上述问题，本发明提供了一种液晶显示面板，包括一基板、设置在所述基板一表面的偏光片及设置在所述基板另一表面的器件，所述器件形成器件区域，其中，还包括一遮挡层，设置在所述偏光片内部或偏光片上表面或偏光片下表面，所述遮挡层遮挡所述器件区域，以防止光漏电流产生，所述器件为薄膜晶体管阵列，在所述基板另一表面设置有多晶硅层，所述多晶硅层进行掺杂，形成所述薄膜晶体管阵列的沟道区域，在所述多晶硅层与所述基板之间设置有隔离层，所述隔离层为二氧化硅层或氮化硅层或两者的组合
本发明还提供了一种液晶显示面板，包括一基板、设置在所述基板一表面的偏光片及设置在所述基板另一表面的器件，所述器件形成器件区域，还包括一遮挡层，设置在所述偏光片内部或偏光片上表面或偏光片下表面，所述遮挡层遮挡所述器件区域，以防止光漏电流产生。
进一步，所述器件为薄膜晶体管阵列。
进一步，在所述基板另一表面设置有多晶硅层，所述多晶硅层进行掺杂，形成所述薄膜晶体管阵列的沟道区域。
进一步，在所述多晶硅层与所述基板之间设置有隔离层。
进一步，所述隔离层为二氧化硅层或氮化硅层或两者的组合。
进一步，所述基板为TFT基板，所述液晶显示面板还包括一与所述TFT基板相对的CF基板，所述TFT基板与所述CF基板之间设置有液晶层。
进一步，在所述CF基板的远离所述TFT基板的一侧的表面设置有一偏光片。
进一步，所述基板为玻璃基板。
进一步，所述遮挡层为金属遮挡层。
 有益效果
本发明的优点在于，在偏光片上制作遮挡层遮挡器件区域，避免在具有一定厚度及锥形倾斜角度的遮挡层上制作多晶硅层，将遮挡层与多晶硅层分开制作，可以避免现有技术中在遮挡层表面制作多晶硅层而造成的多晶硅与遮挡层之间的静电击伤，同时减少了传统LTPS制作工艺的金属遮挡层的制作，节省了一道制程，降低了生产成本。
 附图说明
图1是传统LTPS制作过程中的遮挡层位置的示意图；
图2是本发明液晶显示面板的遮挡层位置的示意图。
 本发明的最佳实施方式
下面结合附图对本发明提供的液晶显示面板的具体实施方式做详细说明。
参见图2，本具体实施方式以LTPS技术的TFT基板为例进行讲解。
所述液晶显示面板包括一基板20、设置在所述基板20一表面的偏光片21及设置在所述基板20另一表面的器件（附图中未标示），所述器件形成器件区域。
在本具体实施方式中，所述基板20为玻璃基板，且所述基板20为TFT基板。在所述TFT基板的远离偏光片21的一侧的表面形成有薄膜晶体管阵列（附图中未标示）。在本具体实施方式中，所述器件即为所述薄膜晶体管阵列，所述器件区域即为薄膜晶体管阵列区域。
在所述薄膜晶体管阵列制作时，在所述基板20的表面形成多晶硅层25，所述多晶硅层25可进行掺杂，形成所述薄膜晶体管阵列的沟道区域。进一步，在所述基板20与所述多晶硅层25之间还形成隔离层24，所述隔离层24可以为二氧化硅层或氮化硅层或两者的组合，在本具体实施方式中，所述隔离层24为远离基板20依次设置的氮化硅层241和二氧化硅层242。在所述二氧化硅层242表面设置有多晶硅层25。由于在所述基板20的表面直接设置隔离层24及多晶硅层25，而并未如现有技术所述在基板20表面设置遮挡层，因此，并不存在遮挡层造成的突起，从而避免了多晶硅层25与遮挡层之间的静电击伤。
为了依然能够实现现有技术中的遮挡层遮挡器件区域的作用，而又避免多晶硅层25与遮挡层之间的静电击伤，在所述偏光片21内部或偏光片21上表面或偏光片21下表面设置有遮挡层26，所述遮挡层26遮挡所述器件区域，以防止光漏电流产生。在本具体实施方式中，所述遮挡层26设置在所述偏光片21内部。在所述偏光片21制作时，直接将所述遮挡层26制作在所述偏光片21内部或偏光片21上表面或偏光片21下表面。所述遮挡层26可以为金属层，也可以为非金属层，只要能够防止光漏电流产生即可，本发明对此不进行限制。所述遮挡层26的结构及制作材料本领域技术人员可从现有的LTPS技术中的遮挡层获得。
进一步，在本具体实施方式中，所述液晶显示面板还包括一与所述TFT基板相对的CF基板（附图中未标示），所述TFT基板与所述CF基板之间设置有液晶层（附图中未标示），在所述CF基板的远离所述TFT基板的一侧的表面设置有一偏光片（附图中未标示）。所述液晶显示面板的结构为本领域的常规结构，在此不赘述。
下面以CMOS LTPS FFS技术为例，列举本发明液晶显示面板制作方法，以进一步说明本发明液晶显示面板的结构。
CMOS LTPS FFS技术的液晶显示面板的制作方法包括如下步骤：
（1）：制作多晶硅层（省去传统制程第一步的遮挡层）。（2）：N-MOS Channel 掺杂制作。（3）：N+掺杂制作。（4）：GE、GI、LDD层制作。（5）：P+掺杂制作。（6）：ILD层制作。（7）：SD 层制作。（8）：PLN层制作。（9）：BITO层制作。（10）： PV层制作。（11）：TITO层制作。（12）：当TFT基板制作完成后与CF基板组立后，偏贴有制作遮光膜层的偏光片。
本发明液晶显示面板的遮挡层的设置除适用于LTPS的TFT背板产品设计，也适用CMOS/NMOS/Top Gate的产品设计；同时，本发明液晶显示面板的遮挡层的设置不仅适用FFS结构，也同样适用于IPS等其他显示结构，也同样适用于in cell touch结构的产品设计。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (14)

  1. 一种液晶显示面板，包括一基板、设置在所述基板一表面的偏光片及设置在所述基板另一表面的器件，所述器件形成器件区域，其中，还包括一遮挡层，设置在所述偏光片内部或偏光片上表面或偏光片下表面，所述遮挡层遮挡所述器件区域，以防止光漏电流产生，所述器件为薄膜晶体管阵列，在所述基板另一表面设置有多晶硅层，所述多晶硅层进行掺杂，形成所述薄膜晶体管阵列的沟道区域，在所述多晶硅层与所述基板之间设置有隔离层，所述隔离层为二氧化硅层或氮化硅层或两者的组合。
  2. 根据权利要求1所述的液晶显示面板，其中，所述基板为TFT基板，所述液晶显示面板还包括一与所述TFT基板相对的CF基板，所述TFT基板与所述CF基板之间设置有液晶层。
  3. 根据权利要求2所述的液晶显示面板，其中，在所述CF基板的远离所述TFT基板的一侧的表面设置有一偏光片。
  4. 根据权利要求1所述的液晶显示面板，其中，所述基板为玻璃基板。
  5. 根据权利要求1所述的液晶显示面板，其中，所述遮挡层为金属遮挡层。
  6. 一种液晶显示面板，包括一基板、设置在所述基板一表面的偏光片及设置在所述基板另一表面的器件，所述器件形成器件区域，其中，还包括一遮挡层，设置在所述偏光片内部或偏光片上表面或偏光片下表面，所述遮挡层遮挡所述器件区域，以防止光漏电流产生。
  7. 根据权利要求6所述的液晶显示面板，其中，所述器件为薄膜晶体管阵列。
  8. 根据权利要求7所述的液晶显示面板，其中，在所述基板另一表面设置有多晶硅层，所述多晶硅层进行掺杂，形成所述薄膜晶体管阵列的沟道区域。
  9. 根据权利要求8所述的液晶显示面板，其中，在所述多晶硅层与所述基板之间设置有隔离层。
  10. 根据权利要求9所述的液晶显示面板，其中，所述隔离层为二氧化硅层或氮化硅层或两者的组合。
  11. 根据权利要求6所述的液晶显示面板，其中，所述基板为TFT基板，所述液晶显示面板还包括一与所述TFT基板相对的CF基板，所述TFT基板与所述CF基板之间设置有液晶层。
  12. 根据权利要求11所述的液晶显示面板，其中，在所述CF基板的远离所述TFT基板的一侧的表面设置有一偏光片。
  13. 根据权利要求6所述的液晶显示面板，其中，所述基板为玻璃基板。
  14. 根据权利要求6所述的液晶显示面板，其中，所述遮挡层为金属遮挡层。
PCT/CN2016/084759 2016-02-29 2016-06-03 液晶显示面板 Ceased WO2017148034A1 (zh)

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