WO2017147773A1 - Optocoupleur et procédé de traitement de lumière - Google Patents

Optocoupleur et procédé de traitement de lumière Download PDF

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WO2017147773A1
WO2017147773A1 PCT/CN2016/075134 CN2016075134W WO2017147773A1 WO 2017147773 A1 WO2017147773 A1 WO 2017147773A1 CN 2016075134 W CN2016075134 W CN 2016075134W WO 2017147773 A1 WO2017147773 A1 WO 2017147773A1
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silicon
region
light
width
waveguide
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PCT/CN2016/075134
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English (en)
Chinese (zh)
Inventor
汪敬
刘磊
刘宁
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华为技术有限公司
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Priority to PCT/CN2016/075134 priority Critical patent/WO2017147773A1/fr
Priority to CN201680077620.2A priority patent/CN108603985B/zh
Publication of WO2017147773A1 publication Critical patent/WO2017147773A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/34—Optical coupling means utilising prism or grating

Definitions

  • the present invention relates to the field of optical communication technologies, and in particular, to an optical coupler and a light processing method.
  • CMOS complementary Metal Oxide Semiconductor
  • the SOI optical waveguide reaches the submicron scale, the spot size of the light in the waveguide is less than 1 ⁇ m, and the size of the plaque in the optical fiber is 8-10 ⁇ m, and the size of the plaque between the two is lost. Matching will result in severe coupling losses.
  • the reverse tapered coupler can reduce the coupling loss between the optical fiber and the optical waveguide, but the process requires precise control of the thickness of the SOI material and is costly.
  • Embodiments of the present invention provide an optical coupler and a light processing method for solving the problem of an optical coupler lacking high coupling efficiency and low process cost in the prior art.
  • an embodiment of the present invention provides an optocoupler comprising: a silicon substrate, a buried oxide layer on the silicon substrate, and a top silicon layer on the buried oxide layer, wherein the top silicon layer includes a plurality of side by side layers. a sub-wavelength silicon grating and a light combining region; wherein, the two ends of the plurality of sub-wavelength silicon gratings are respectively connected to the external fiber and the light combining region, and the width of one end of the plurality of sub-wavelength silicon gratings connected to the external fiber is smaller than The width of one end that is in contact with the junction area.
  • the plurality of sub-wavelength silicon gratings are tapered, for coupling light incident from the external fiber into the top silicon layer, and also for reducing the spot size of light propagating in the direction of the light combining region in itself to The spot size of the light in the target waveguide, and the light combining region is used to combine the light input from the plurality of sub-wavelength silicon gratings and to transmit the combined light to the target waveguide.
  • the spot size gradually decreases to the spot size of the light in the target waveguide, and the two paths of light are combined through the light combining region and then transmitted to the target waveguide. Since the spot mismatch is reduced, the coupling loss is reduced and the coupling efficiency is improved.
  • the parameters such as the width and length of the silicon block in the sub-wavelength silicon grating, the spacing of adjacent silicon blocks, and the pitch of the plurality of sub-wavelength silicon gratings can be obtained.
  • the smallest PDL not only has a large degree of design freedom, but also the above parameters are the size of the silicon block in the top silicon layer.
  • the designed pattern can be obtained by one photolithography process, and the process cost is low and the yield is high.
  • the top silicon layer includes two sub-wavelength silicon gratings.
  • each sub-wavelength silicon grating includes: a first region, a second region, and a third region that are sequentially connected; wherein the two ends of the first region are respectively associated with the outer fiber and the second region
  • the first region includes a plurality of silicon blocks arranged in a row at intervals, and is used for coupling light incident from the external fiber into the top silicon layer
  • the second region includes a plurality of silicon arranged in a row at intervals a block, and a width of the silicon block in the second region is greater than a width of the silicon block in the first region, for reducing a spot size of light input from the first region
  • both ends of the third region are respectively combined with the second region
  • the light regions are connected, and the third region is formed by the first silicon grating and the second silicon grating, wherein the silicon block in each of the second silicon gratings is located between two adjacent silicon blocks of the first silicon grating, and The width of the silicon block in the second silicon grating is smaller than the width of the silicon
  • pattern matching of the transversely polarized light and the transverse magnetic polarized light can be realized by controlling parameters such as the length and width of the silicon block in the first region, the pitch of adjacent silicon blocks, and the pitch of the plurality of sub-wavelength silicon gratings. And thus get the smallest PDL.
  • the parameters such as the length, the width, the grating period and the width of the taper tip of the silicon block are only the pattern shape in the top silicon layer, and the device pattern can be prepared by one photolithography process, and the process is simple.
  • the minimum PDL can be obtained by adjusting any one or more of the four parameters of the length, the width, the grating period, and the cone tip width of the silicon block, and the design freedom is greater, which is beneficial to both. Other coupling parameters. Furthermore, through the second area and the third area The domain performs mode conversion on the light coupled into the silicon block, gradually reducing the spot size to a value close to the target waveguide, and adjusting the shape of the spot to a shape consistent with the target waveguide.
  • all of the silicon blocks in the first region are equal in length, equal in width, and have the same pitch of any two adjacent silicon blocks in the first region.
  • the width of the silicon block adjacent to the first region of any two adjacent silicon blocks in the second region is smaller than the width of the silicon block near the third region, in other words, the second region is closer to the first region.
  • the side of the silicon block gradually increases toward the side closer to the third region, so that the spot of the light input from the first region is gradually reduced to reduce the spot mismatch between the optical fiber and the target waveguide.
  • the silicon block in each second silicon grating is connected to two adjacent silicon blocks of the first silicon grating, and the width of each silicon block in the first silicon grating is equal to the largest in the second region.
  • the width of the silicon block near the third region, the width of the silicon block adjacent to the second region of any two adjacent silicon blocks in the second silicon grating is smaller than the width of the silicon block near the light combining region, in other words, the second silicon grating
  • the side of the second region is closer to the side of the third region, and the width of the silicon block is gradually increased, and further, in the third region, while the shape of the light is adjusted to be the shape of the spot in the target waveguide.
  • the spot size of the light transmitted to the light combining region is reduced to the spot size in the target waveguide, the spot size mismatch is reduced, and the coupling efficiency is improved.
  • the width of the silicon block closest to the second region of the second silicon grating is smaller than the width of the silicon block in the first region to increase the conversion capability of the third region to the spot size.
  • the length of each silicon block in the first region, the length of each silicon block in the second region, and the length of each silicon block in the first silicon grating are the same.
  • the pitch of adjacent silicon blocks in the second region gradually decreases from a side closer to the first region toward a side closer to the third region, and a pitch of adjacent silicon blocks in the first silicon grating is from The side close to the second area gradually decreases toward the side close to the light combining area.
  • any two sub-wavelength silicon gratings of the plurality of sub-wavelength silicon gratings are parallel and axisymmetric.
  • the light combining region includes: a multimode waveguide, a plurality of input waveguides on a first side of the multimode waveguide, and an output waveguide on a second side of the multimode waveguide.
  • the multimode waveguide is a polarization insensitive waveguide, that is, for TE polarized light and TM polarized light, the multimode waveguide width should support only two lowest order modes.
  • the polarization insensitive multimode waveguide is easier to package the optocoupler.
  • the width of each input waveguide and the output waveguide varies linearly, wherein each input waveguide and the output waveguide are connected to the multimode waveguide at a maximum waveguide width.
  • the intensity variation of the light input to the light combining region and the output light combining region can be made smoother by the linear variation of the width of the input waveguide and the output waveguide.
  • the width of the silicon block adjacent to the light combining region of the plurality of subwavelength silicon gratings, the width of the side ends of the two input waveguides of the light combining region connected to the mode conversion region, and the output waveguide of the light combining region is equal to the width of the target waveguide such that the spot size of the light input to the target waveguide is the same as the spot size of the target waveguide.
  • an embodiment of the present invention provides a light processing method, where the method is performed by an optical coupler, the optical coupler includes a silicon substrate, a buried oxide layer on the silicon substrate, and the buried a top silicon layer on the oxygen layer, the top silicon layer includes a plurality of side-by-side sub-wavelength silicon gratings and a light combining region; both ends of the plurality of sub-wavelength silicon gratings are respectively connected to the external optical fiber and the light combining region And the width of the first end of the plurality of sub-wavelength silicon gratings that is in contact with the external fiber is smaller than the width of the second end that is in contact with the light combining region, the method comprising: the optical coupling region Receiving light output from an external optical fiber through respective first ends of the plurality of sub-wavelength silicon gratings; the optical coupler dimming a spot size of light received from the external optical fiber to the target waveguide by the plurality of sub-wavelength silicon gratings The spot size
  • each of the sub-wavelength silicon gratings includes: a first region, a second region, and a third region that are sequentially connected; wherein, the two ends of the first region are respectively opposite to the external The optical fiber and the second area are connected, and the first area includes a plurality of discontinuous rows arranged in a row
  • the second region includes a plurality of non-contiguous silicon blocks arranged in a row, and a width of the silicon block in the second region is greater than a width of the silicon block in the first region, the second region
  • the width of the silicon block adjacent to the first region of any two adjacent silicon blocks is smaller than the width of the silicon block near the third region; both ends of the third region are respectively associated with the second region and the light combining region
  • the third region is formed by the first silicon grating and the second silicon grating, wherein the silicon block in each of the second silicon gratings is located adjacent to the two silicon blocks of the first silicon grating.
  • a width of the silicon block in the second silicon grating is smaller than a width of the silicon block in the first silicon grating; a width of each silicon block in the first silicon grating is equal to a maximum in the second region a width of the silicon block adjacent to the third region, wherein a width of the silicon block adjacent to the second region of any two adjacent silicon blocks in the second silicon grating is smaller than a width of the silicon block near the light combining region
  • the optical coupler receives light from the external optical fiber through the plurality of sub-wavelength silicon gratings
  • the spot size is reduced to a spot size of light of the target waveguide, comprising: the optical coupler coupling light received from the outer fiber into the top silicon layer through the first region and coupling into the top Light of the silicon layer is transmitted to the second region; the optical coupler reduces a spot size of light input from the first region through the second region and transmits the processed light to the third region a region; the optical coupler reduces a light plate size of light input from the second
  • the light combining region includes: a polarization insensitive multimode waveguide, two input waveguides on a first side of the multimode waveguide, and an output on a second side of the multimode waveguide.
  • a waveguide; the optical coupler combines the light respectively processed by the plurality of sub-wavelength silicon gratings by the combiner and transmits the combined light to the target waveguide, including: the optical coupler passes The two input waveguides respectively receive light input from respective second ends of the plurality of sub-wavelength silicon gratings; the optical coupler is input from the two input waveguides through the polarization insensitive multimode waveguide The light is combined and transmitted to the output waveguide; the optical coupler transmits the combined light of the multimode waveguide to the target waveguide through the output waveguide.
  • FIG. 1 is a schematic cross-sectional view of an optical coupler in accordance with an embodiment of the present invention
  • FIG. 2 is a schematic view showing a top view pattern of a top silicon layer according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram showing a top view pattern of a mode switching region in a top silicon layer according to an embodiment of the present invention
  • FIG. 4 is a schematic view showing a top view pattern of a light combining region in a top silicon layer according to an embodiment of the present invention.
  • Silicon-on-insulator SOI refers to the introduction of a buried oxide layer between the top silicon and the back substrate to reduce parasitic capacitance and leakage current.
  • the SOI is a silicon substrate 10, a buried oxide layer 20, and a top silicon layer 30 from bottom to top, wherein the silicon in the top silicon layer 30 is etched into a corresponding pattern of the coupler, and the etched SOI structure is used. That is, as a coupler between the optical fiber and the optical waveguide.
  • the silicon block refers to the bulk silicon which is etched in the top silicon layer 30.
  • the three-dimensional dimensions of the silicon block are referred to as "thickness", “length” and “width”, respectively, wherein the thickness refers to the vertical direction of the silicon block pointing along the buried silicon layer 20 toward the top silicon layer 30.
  • the size of the direction, the length refers to the dimension of the silicon block in the direction along which the light propagates, and the width refers to the dimension of the dimension of the silicon block perpendicular to the thickness direction in the cross section perpendicular to the direction of propagation of the light.
  • a silicon grating refers to a grating formed by a group of silicon blocks arranged in a row at intervals. Wherein, the period of the silicon grating refers to the pitch of two adjacent silicon blocks.
  • the sub-wavelength grating refers to a grating whose grating period is much smaller than the wavelength of the incident light. Since the grating period is much smaller than the wavelength of the incident light, the light reflected by the grating can be neglected, and the incident light continues to propagate forward through the silicon grating.
  • the grating period may be smaller than the first-order Bragg grating period, such as the grating period being in the range of 250 nm to 500 nm.
  • Polarization-dependent loss refers to the maximum transmission difference of an optical device or system under all polarization states, that is, the ratio of maximum transmission to minimum transmission in all polarization states. PDL is an important parameter to characterize coupling loss. The smaller the value, the smaller the coupling loss.
  • an optical coupler according to an embodiment of the present invention includes a silicon substrate 10, a buried oxide layer 20 on the silicon substrate 10, and a top silicon layer 30 on the buried oxide layer 20.
  • the top silicon layer 30 is etched into a coupler pattern. Specifically, the top silicon layer 30 includes a mode switching region 31 and a light combining region 32.
  • the mode conversion region 31 includes a plurality of side-by-side sub-wavelength silicon gratings 310.
  • the widths of the silicon blocks at the two side ends of the plurality of sub-wavelength silicon gratings 310 are different. Specifically, the width of the silicon blocks on the side where the sub-wavelength silicon grating 310 is connected to the optical fiber is smaller, and the one connected to the light combining region is smaller. The width of the silicon block on the side is large, and the sub-wavelength silicon grating 310 is generally tapered.
  • the spot size is gradually reduced until the spot size of the light output from the sub-wavelength silicon grating to the light-combining region 32 is close (ie, Slightly larger than or equal to the spot size corresponding to the target waveguide.
  • the light combining region 32 includes a plurality of input waveguides 321, a multimode waveguide 322, and an output waveguide 323, wherein the plurality of input waveguides 321 are respectively connected to the plurality of subwavelength silicon gratings 310 of the mode conversion region 31 for receiving the plurality of sub-transmissions The light processed by the wavelength silicon grating 310.
  • the multimode waveguide 322 is for combining light of the multiplexed light input through the two input waveguides 321 and transmitting the processed light to the target waveguide via the output waveguide 323.
  • the light spot gradually decreases to the size of the spot of the general silicon waveguide, and the multiple lights are combined and transmitted to the target through the light combining area 32.
  • the waveguide reduces coupling loss due to reduced spot mismatch.
  • parameters such as the width and length of the silicon block in the sub-wavelength silicon grating 310, the spacing of adjacent silicon blocks, the pitch of the plurality of sub-wavelength silicon gratings 310, and the like may be adjusted.
  • the minimum PDL not only the design freedom is large, but also the above parameters are the size of the silicon block in the surface of the top silicon layer 30.
  • the designed pattern can be obtained by one photolithography process, and the process cost is low and the yield is high.
  • the mode conversion area 31 may include two, three, four, and more sub-wavelength silicon gratings.
  • the mode conversion area 31 includes two sub-wavelength silicon.
  • the grating is described as an example.
  • the two sub-wavelength silicon gratings 310 each include a first region 311, a second region 312, and a third region 313 that are sequentially connected.
  • the first region 311 includes a plurality of discontinuous silicon blocks arranged in a row at intervals, for coupling the light incident from the optical fiber into the top silicon layer, and continuing along the silicon block in the first region 311. propagation.
  • the spacing of adjacent silicon blocks in the first region 311 is less than the first-order Bragg grating period, as it may range from 250 nm to 500 nm.
  • the second region 312 includes a plurality of discontinuous silicon blocks arranged in a row at a distance from each other, wherein the width of the silicon block in the third region 313 is greater than the width of the silicon block in the first region 311, and further, the light is from the first region 311. After entering the second region 312, the spot size is reduced.
  • the third region 313 is formed by the first silicon grating 3131 and the second silicon grating 3132, wherein the silicon block in each of the second silicon gratings 3132 is located between two adjacent silicon blocks of the first silicon grating 3131, and
  • the width of the silicon block (hereinafter referred to as "internal silicon block") in the second silicon grating 3132 is smaller than the width of the silicon block (hereinafter referred to as "outer silicon block”) in the first silicon grating 3131.
  • the third region 313, which may in turn be referred to as a toothed mode transition region, is used to adjust the shape of the spot to adjust the spot shape to a shape that is consistent with the target waveguide.
  • Each of the internal silicon blocks is located between two adjacent external silicon blocks of the first silicon grating 3131, and may include the following two embodiments: First, each internal silicon block connects two adjacent external silicon blocks, that is, The inner silicon block is connected to the outer silicon block; second, each inner silicon block is located between the two outer silicon blocks, and the outer silicon block is not connected to the inner silicon block, and the two are etched and separated.
  • the length, width, and light of the silicon block in the first region 311 can be controlled.
  • the pattern matching of Transverse-electric (TE) polarized light and Transverse-magnetic (TM) polarized light is realized, and the minimum PDL is obtained.
  • the numerical simulation software can be used to obtain the relationship between the value of the above parameters and the PDL. By changing the value of the above parameters, the minimum PDL is obtained, and then the optimal device size parameter is determined.
  • the coupling is mainly achieved by adjusting the thickness of the top silicon layer 30.
  • a new material needs to be introduced, and multiple etching processes are adopted, and the process cost is high.
  • the parameters such as the length, the width, the grating period, and the taper width of the silicon block are only the pattern shape in the plane of the top silicon layer 30, and the device pattern can be prepared by one photolithography process. Simple process.
  • the minimum PDL can be obtained by adjusting any one or more of the four parameters of the length, the width, the grating period, and the cone tip width of the silicon block, and the design freedom is greater, which is beneficial to both.
  • Other coupling parameters For example, in order to obtain a higher alignment tolerance, the width of the taper tip can be appropriately increased because when the width of the taper tip is increased, the position at which the minimum coupling loss is obtained is not at the center of the waveguide, but is moved to the left and right, respectively, so that coupling The curve of loss and fiber position changes from a unimodal curve to a bimodal flat curve, which greatly increases the alignment tolerance between the fiber and the waveguide.
  • mode conversion is performed on the light coupled into the silicon block through the second region 312 and the third region 313, the spot size is gradually reduced to a value close to the target waveguide, and the shape of the spot is adjusted to be consistent with the target waveguide. shape.
  • all of the silicon blocks in the first region 311 are equal in length, equal in width, and equal in pitch between adjacent silicon blocks to stably couple light input from the optical fiber into the silicon block.
  • the grating period of the first region 311 ie, the pitch of adjacent silicon blocks
  • the lengths of the silicon blocks are equal and the values are in the range of 100 nm to 400 nm
  • the first region 311 The overall length is in the range of 10 ⁇ m to 50 ⁇ m
  • the widths of all the silicon blocks are equal and the values are in the range of 0.1 ⁇ m to 0.3 ⁇ m
  • the width of the taper tip is in the range of 0.5 ⁇ m to 2.5 ⁇ m.
  • the width of the silicon block adjacent to the first region 311 of any two adjacent silicon blocks in the second region 312 is smaller than the width of the silicon block near the third region 313, in other words, from the second The region 312 is adjacent to the side of the first region 311 toward the side closer to the third region 313, and the width of the silicon block is gradually increased, and the width may specifically increase linearly, exponentially increase, or increase in the form of a parabolic function.
  • the width of the silicon block in the second region 312 gradually becomes larger, so that the spot of the light input from the first region 311 is gradually reduced to reduce the spot mismatch between the optical fiber and the target waveguide.
  • the overall length of the second region 312 may range from 20 ⁇ m to 50 ⁇ m.
  • the silicon block in each of the second silicon gratings 3132 is connected to two adjacent silicon blocks of the first silicon grating 3131, that is, the outer silicon blocks in the first silicon grating 3131 and the second The outer silicon blocks in the silicon grating 3132 are connected together.
  • the width of each silicon block in the first silicon grating 3131 is equal to the maximum width of the silicon block in the second region 312, and in the implementation manner in which the width of the silicon block is gradually increased in the second region 312, the first silicon grating 3131 The width of each of the silicon blocks is equal to the width of the silicon block closest to the third region 313.
  • the width of the silicon block adjacent to the second region 312 of any two adjacent silicon blocks in the second silicon grating 3132 is smaller than the width of the silicon block near the light combining region, in other words, the second silicon grating 3132 is close to the second region.
  • the side of the 312 is closer to the side of the third region 313, and the width of the inner silicon block is gradually increased.
  • the function of the first silicon grating is to achieve a smooth transition of the spot
  • the function of the second silicon grating is to further reduce the size of the spot to the spot size of the light in the target waveguide, and to adjust the shape of the spot to the target waveguide.
  • the shape of the spot in the light Specifically, the second silicon grating is gradually increased in the light propagation direction by the width of the inner silicon block, thereby converting the discontinuous periodic waveguide to the continuous waveguide, thereby smoothly transforming the Bloch mode light in the third region into the target waveguide. In the non-Bloch mode of light, the shape of the spot is adjusted.
  • the third region 313 forms a tooth pattern converter by inserting the outer silicon block and the inner silicon block for shaping the spot, and adjusting the spot input by the second region 312 to be consistent with the target waveguide. shape.
  • the toothed mode converter formed by the third region 313 can further adjust the spot size to a value close to the spot size in the target waveguide.
  • the third region 313 is closest to the second region 312.
  • the width of the portion of the silicon block is smaller than the width of the silicon block in the first region 311. Since the minimum value of the inner silicon block is smaller than the width of the silicon block in the first region 311, the maximum width of the inner silicon block approaches or reaches the width of the outer silicon block, thereby ensuring the total width of the inner silicon block in the third region 313.
  • the variation range is large, and the ability of the third region 313 to adjust the spot size is enhanced.
  • the length of each silicon block in the first region 311, the length of each silicon block in the second region 312, and the length of each silicon block in the first silicon grating 3131 are the same.
  • the spacing of adjacent silicon blocks in the second region 312 gradually decreases from a side closer to the first region 311 toward a side closer to the third region 313, and adjacent in the third region 313
  • the pitch of the two outer silicon blocks gradually decreases from the side close to the second region 312 toward the side 32 close to the light combining region 32.
  • the reflection loss is reduced, and the coupling efficiency is improved.
  • the two sub-wavelength silicon gratings 310 in the mode conversion region 31 are parallel and axisymmetric.
  • the two sub-wavelength silicon gratings 310 are parallel, meaning that the central axes of the two silicon gratings are parallel and not collinear; further, the two silicon gratings are symmetric, referring to two silicon gratings along two of the two The bisector of the axis is axisymmetric.
  • the first central axis of all the silicon blocks in the first region 311, the second central axis of all the silicon blocks in the second region 312, and the third middle of all the silicon blocks in the third region 313 coincide.
  • the light combining region 32 includes: two input waveguides 321, a multimode waveguide 322, and an output waveguide 323.
  • the input waveguide 321 and the output waveguide 323 are respectively located at two sides of the multimode waveguide 322, and the multimode waveguide 322 is used for combining two paths of light input through the two input waveguides 321 and is a polarization insensitive waveguide.
  • the so-called polarization-insensitive multimode waveguide means that for TE polarized light and TM polarized light, the multimode waveguide width should support only two lowest order modes, namely TE0/TE2, TM0/TM2. Polarization-insensitive multimode waveguides are easier to package for optocouplers.
  • the width of the multimode waveguide 322 may range from 1.5 ⁇ m to 2.5 ⁇ m, and the length of the multimode waveguide 322 is determined by the width optimization, which may be an integer multiple of the length of the first time when the splitting can be generated. .
  • the two input waveguides 321 are respectively located at 1/4 and 3/4 of the width of the multimode region, and the output waveguide 323 is located at the center of the width of the multimode region.
  • the input waveguide 321 and the output waveguide 323 are waveguides whose width varies linearly, and the two waveguides 321 and the output waveguide 323 are connected to the multimode waveguide 322 at the maximum waveguide width. .
  • the input waveguide 321 and the output waveguide 323 are trapezoidal in the plane of the top silicon layer 30.
  • the minimum value of the width of the input waveguide 321 and/or the output waveguide 323 may be 0.7 ⁇ m to 1.2 ⁇ m, and the maximum value of the width may be 2 ⁇ m to 5 ⁇ m.
  • the two sub-wavelength silicon gratings 310 are adjacent to the width of the silicon block of the light combining region 32, and the widths of the side ends of the two input waveguides 321 of the light combining region 32 connected to the mode conversion region 31, And the width of the side end of the output waveguide 323 of the light combining region 32 connected to the target waveguide is equal to the width of the target waveguide such that the spot size of the light input to the target waveguide is the same as the spot size of the target waveguide.
  • the optical coupler further includes: a protective layer 40 on the top silicon layer 30, the material of the protective layer may be silicon dioxide or other oxides compatible with the silicon process, The pattern corresponding to the mode switching region 31 and the light combining region 32 is protected in the top silicon layer 30 to prevent the device pattern from being worn or corroded.
  • the protective layer is covered in the gap between the silicon blocks in the top silicon layer 30.
  • the above content of the embodiment of the present invention is described from the angle that light is incident on the optical coupler through the optical coupler and enters the target waveguide via the optical coupler. In actual cases, the above situation is reversible, that is, the light is from the target.
  • the optical coupler can also achieve the adaptation of the optical fiber spot to the target waveguide spot to reduce the coupling loss.
  • the sub-wavelength silicon grating 310 is different from that shown in FIG. 2 and FIG. 3 .
  • it may also be an implementation including other presentation-like cones.
  • the sub-wavelength silicon grating 310 includes a plurality of discontinuous silicon blocks arranged in a row at intervals, from the side close to the optical fiber.
  • the width of the silicon block is gradually increased; for example, the sub-wavelength silicon grating includes N segments sequentially connected, N is greater than or equal to 2, and each segment includes a plurality of silicon blocks of equal width, wherein The width of the silicon block in the k+1th segment is larger than the width of the silicon block in the kth segment, and the value of k is 1 to N-1, in other words, from the side close to the optical fiber to the side close to the light combining region The width of the silicon block in different sections gradually increases.
  • the silicon pattern in the top silicon layer 30 is integrally formed, wherein the third region 313 is connected to the light combining region 32, and the light combining region 32 is connected to the target waveguide, which refers to the silicon blocks of the two. It is connected.
  • the first region 311 of the sub-wavelength silicon grating 310 is in contact with the second region 312, and refers to the silicon block of the rightmost end of the first region 311 and the silicon block of the leftmost end of the second region 312. adjacent.
  • an embodiment of the present invention further provides a light processing method.
  • the method is performed by an optical coupler including a silicon substrate, a buried oxide layer on the silicon substrate, and a location a top silicon layer on the buried oxide layer, the top silicon layer includes a plurality of side-by-side sub-wavelength silicon gratings and a light combining region; both ends of the plurality of sub-wavelength silicon gratings are respectively combined with an external optical fiber and the combined light And a plurality of sub-wavelength silicon gratings having a width of the first end that is in contact with the outer fiber is smaller than a width of the second end that is in contact with the light-combining region, the method comprising:
  • the optical coupling region receives light output by the external optical fiber through respective first ends of the plurality of sub-wavelength silicon gratings;
  • the optical coupler reduces a spot size of light received from the external optical fiber to a spot size of light of the target waveguide by the plurality of sub-wavelength silicon gratings;
  • the optical coupler transmits the processed light to the light combining region through respective second ends of the plurality of sub-wavelength silicon gratings;
  • the optical coupler combines the light processed by the plurality of sub-wavelength silicon gratings and transmits the combined light to the target waveguide through the light combiner.
  • each of the sub-wavelength silicon gratings includes: sequentially connected a region, a second region, and a third region; wherein, the two ends of the first region are respectively connected to the outer optical fiber and the second region, and the first region includes a plurality of discontinuous rows arranged in a row
  • the second region includes a plurality of non-contiguous silicon blocks arranged in a row, and a width of the silicon block in the second region is greater than a width of the silicon block in the first region, the second region
  • the width of the silicon block adjacent to the first region of any two adjacent silicon blocks is smaller than the width of the silicon block near the third region; both ends of the third region are respectively associated with the second region and the light combining region
  • the third region is formed by the first silicon grating and the second silicon grating, wherein the silicon block in each of the second silicon gratings is located adjacent to the two silicon blocks of the first silicon grating.
  • a width of the silicon block in the second silicon grating is smaller than a width of the silicon block in the first silicon grating; a width of each silicon block in the first silicon grating is equal to a maximum in the second region a width of the silicon block adjacent to the third region, any adjacent one of the second silicon gratings The width of the silicon block in the silicon adjacent to the second block region is less than the width of the silicon block close to the light combining region;
  • the optical coupler reduces the spot size of the light received from the external optical fiber to the spot size of the light of the target waveguide by the plurality of sub-wavelength silicon gratings, including:
  • the optical coupler couples light received from the outer optical fiber into the top silicon layer through the first region and transmits light coupled into the top silicon layer to the second region;
  • the optical coupler reduces a spot size of light input from the first area through the second area and transmits the processed light to the third area;
  • the optical coupler reduces a light plate size of light input from the second region to a spot size of light in the target waveguide through the third region, and a spot of light input from the second region The shape is adjusted to the spot shape of the light in the target waveguide.
  • the light combining region includes: a polarization insensitive multimode waveguide, a plurality of input waveguides on a first side of the multimode waveguide, and a second side of the multimode waveguide Output waveguide
  • the optical coupler combines the light processed by the plurality of sub-wavelength silicon gratings and transmits the combined light to the target waveguide through the light combiner, including:
  • the optical coupler receives the plurality of sub-wavelength silicon gratings through the plurality of input waveguides Light input by the respective second end;
  • the optical coupler combines light input from the two input waveguides through the polarization insensitive multimode waveguide and transmits the light to the output waveguide;
  • the optical coupler transmits the combined light of the multimode waveguide to the target waveguide through the output waveguide.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

L'invention concerne un optocoupleur qui comprend un substrat de silicium (10), une couche d'oxyde enterrée (20) sur le substrat de silicium (10) et une couche de silicium supérieure (30) sur la couche d'oxyde enterrée. La couche de silicium supérieure comprend une pluralité d'éléments de réseau de silicium de sous-longueur d'onde parallèles (310) et une zone de couplage optique (32). Deux extrémités de tous les éléments de réseau de silicium de sous-longueur d'onde sont reliées à des fibres optiques externes et à la zone de couplage optique, respectivement, et les largeurs des extrémités reliées aux fibres optiques externes sont inférieures à celles des autres extrémités reliées à la zone de couplage optique. Chacun des éléments de réseau de silicium de sous-longueur d'onde couple, à la couche de silicium supérieure, une lumière transmise provenant de la fibre optique externe, et diminue une taille de point de la lumière transmise à la zone de couplage optique en une taille de point de lumière dans un guide d'ondes cible. La zone de couplage optique est utilisée pour combiner une entrée de lumière provenant de la pluralité d'éléments de réseau de silicium de sous-longueur d'onde, et transmettre la lumière au guide d'ondes cible, ce qui permet de résoudre le problème de l'état antérieur de la technique du manque d'un optocoupleur ayant une efficacité de couplage élevée et de faibles coûts technologiques. L'invention concerne également un procédé de traitement de lumière.
PCT/CN2016/075134 2016-03-01 2016-03-01 Optocoupleur et procédé de traitement de lumière WO2017147773A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/CN2016/075134 WO2017147773A1 (fr) 2016-03-01 2016-03-01 Optocoupleur et procédé de traitement de lumière
CN201680077620.2A CN108603985B (zh) 2016-03-01 2016-03-01 一种光耦合器及光处理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2016/075134 WO2017147773A1 (fr) 2016-03-01 2016-03-01 Optocoupleur et procédé de traitement de lumière

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WO2017147773A1 true WO2017147773A1 (fr) 2017-09-08

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CN112558222A (zh) * 2020-12-16 2021-03-26 联合微电子中心有限责任公司 端面耦合器的制造方法
CN112630886A (zh) * 2020-12-22 2021-04-09 联合微电子中心有限责任公司 端面耦合器及其制造方法
CN114200582A (zh) * 2021-12-23 2022-03-18 电子科技大学 Soi基双向收集光垂直光栅耦合器及工作方法
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CN116594109A (zh) * 2023-07-19 2023-08-15 中天通信技术有限公司 光模块及其制备方法

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CN112433295B (zh) * 2020-11-10 2022-08-16 武汉光谷信息光电子创新中心有限公司 一种超宽带分合束器
CN114740568A (zh) * 2021-01-08 2022-07-12 华为技术有限公司 阵列波导光栅及其制造方法、收发机及光通信系统
CN116840987B (zh) * 2023-08-30 2023-12-12 深圳市速腾聚创科技有限公司 光芯片、激光雷达及可移动设备
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CN112558222A (zh) * 2020-12-16 2021-03-26 联合微电子中心有限责任公司 端面耦合器的制造方法
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CN114200582A (zh) * 2021-12-23 2022-03-18 电子科技大学 Soi基双向收集光垂直光栅耦合器及工作方法
CN116594109A (zh) * 2023-07-19 2023-08-15 中天通信技术有限公司 光模块及其制备方法
CN116594109B (zh) * 2023-07-19 2023-10-13 中天通信技术有限公司 光模块及其制备方法

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