WO2017126641A1 - Corps lié ainsi que procédé de fabrication de celui-ci, et substrat pour module de puissance ainsi que procédé de fabrication de celui-ci - Google Patents

Corps lié ainsi que procédé de fabrication de celui-ci, et substrat pour module de puissance ainsi que procédé de fabrication de celui-ci Download PDF

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WO2017126641A1
WO2017126641A1 PCT/JP2017/001840 JP2017001840W WO2017126641A1 WO 2017126641 A1 WO2017126641 A1 WO 2017126641A1 JP 2017001840 W JP2017001840 W JP 2017001840W WO 2017126641 A1 WO2017126641 A1 WO 2017126641A1
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Prior art keywords
layer
intermetallic compound
ceramic substrate
compound layer
power module
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PCT/JP2017/001840
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English (en)
Japanese (ja)
Inventor
伸幸 寺▲崎▼
長友　義幸
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三菱マテリアル株式会社
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Priority claimed from JP2017000381A external-priority patent/JP6819299B2/ja
Application filed by 三菱マテリアル株式会社 filed Critical 三菱マテリアル株式会社
Priority to EP17741518.9A priority Critical patent/EP3407380B1/fr
Priority to CN201780015160.5A priority patent/CN109075135B/zh
Priority to US16/070,332 priority patent/US11062974B2/en
Priority to KR1020187023493A priority patent/KR102419486B1/ko
Publication of WO2017126641A1 publication Critical patent/WO2017126641A1/fr

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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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Definitions

  • the present invention relates to a joined body in which a ceramic member and a Cu member are joined, and a power module substrate in which a Cu plate made of Cu or a Cu alloy is joined to a ceramic substrate.
  • Semiconductor devices such as LEDs and power modules have a structure in which a semiconductor element is bonded on a circuit layer made of a conductive material.
  • a power semiconductor element for high power control used for controlling an electric vehicle such as wind power generation or an electric vehicle
  • a large amount of heat is generated. Therefore, as a substrate on which the power semiconductor element is mounted, for example, AlN (aluminum nitride) 2.
  • a power module substrate in which a metal plate having excellent conductivity is bonded as a circuit layer to one surface of a ceramic substrate made of has been widely used.
  • a metal plate may be joined as a metal layer to the other surface of the ceramic substrate.
  • the power module substrate shown in Patent Document 1 has a structure in which a circuit layer is formed by bonding a Cu plate (Cu member) to one surface of a ceramic substrate (ceramic member).
  • a Cu plate is disposed on one surface of a ceramic substrate with a Cu—Mg—Ti brazing material interposed therebetween, and heat treatment is performed to bond the Cu plate.
  • an intermetallic compound containing Cu, Mg, or Ti is present in the vicinity of the ceramic substrate. It is formed.
  • the intermetallic compound formed in the vicinity of the ceramic substrate is hard, the thermal stress generated in the ceramic substrate when a thermal cycle is applied to the power module substrate increases, and cracks are likely to occur in the ceramic substrate. there were.
  • the bonding rate between the ceramic substrate and the circuit layer may be reduced, and it may not be possible to bond well. there were.
  • Patent Documents 2 and 3 propose a power module substrate in which a ceramic substrate and a circuit layer are bonded using a Cu—P—Sn brazing material and a Ti material.
  • a Cu—Sn layer is formed on the ceramic substrate side, and a hard intermetallic compound layer is not provided in the vicinity of the ceramic substrate. In this case, thermal stress generated in the ceramic substrate can be reduced, and cracks can be prevented from occurring in the ceramic substrate.
  • the heat generation temperature of the semiconductor elements mounted on the power module substrate tends to increase, and the power module substrate is required to dissipate heat more efficiently than before.
  • a Ti layer is formed between the ceramic substrate and the circuit layer made of Cu or Cu alloy, and the thickness of the Ti layer is 1 ⁇ m or more and 15 ⁇ m. It is formed relatively thick as follows. For this reason, the thermal resistance in the stacking direction is increased, and there is a possibility that heat cannot be efficiently radiated.
  • a Cu—Sn layer and an intermetallic compound layer containing P and Ti are formed between the ceramic substrate and the circuit layer made of Cu or Cu alloy.
  • the use environment temperature is high, cracks are generated starting from the intermetallic compound layer containing P and Ti, which may result in insufficient bonding.
  • the present invention has been made in view of the above-described circumstances, and is a bonded body in which a ceramic member and a Cu member are bonded satisfactorily and the heat resistance in the stacking direction is low and can be efficiently radiated.
  • An object of the present invention is to provide a power module substrate, a method for manufacturing the joined body, and a method for manufacturing the power module substrate.
  • a joined body is a joined body of a ceramic member made of ceramics and a Cu member made of Cu or a Cu alloy, and the ceramic member and the Cu member A Cu—Sn layer in which Sn is solid-solved in Cu, a first intermetallic compound layer containing Cu and Ti, located on the Cu member side, and located on the ceramic member side, A second intermetallic compound layer containing P and Ti is formed between the first intermetallic compound layer and the Cu—Sn layer.
  • the first intermetallic compound layer containing Cu and Ti is formed on the Cu member side, so the Cu member and the second intermetallic compound layer are Can be reliably bonded, and the bonding strength between the Cu member and the ceramic member can be ensured even when the use environment temperature increases. Further, since the Ti layer is not formed or is very thin, the thermal resistance in the stacking direction can be kept low, and heat can be efficiently radiated.
  • a Ti layer is formed between the first intermetallic compound layer and the second intermetallic compound layer, and the thickness of the Ti layer is 0. It may be 5 ⁇ m or less.
  • a Ti layer is formed between the first intermetallic compound layer and the second intermetallic compound layer, and since the thickness of the Ti layer is 0.5 ⁇ m or less, the stacking direction The heat resistance in can be kept low, and heat can be radiated efficiently.
  • the thickness of the first intermetallic compound layer is in a range of 0.2 ⁇ m to 6 ⁇ m.
  • the thickness of the first intermetallic compound layer containing Cu and Ti is 0.2 ⁇ m or more, the bonding strength between the Cu member and the ceramic member can be reliably improved.
  • the thickness of the first intermetallic compound layer is 6 ⁇ m or less, the occurrence of cracks in the first intermetallic compound layer can be suppressed.
  • the thickness of the second intermetallic compound layer is in the range of 0.5 ⁇ m to 4 ⁇ m.
  • the thickness of the 2nd intermetallic compound layer containing P and Ti is 0.5 micrometer or more, the joint strength of Cu member and a ceramic member can be improved reliably.
  • the thickness of the second intermetallic compound layer is 4 ⁇ m or less, occurrence of cracks in the second intermetallic compound layer can be suppressed.
  • a power module substrate includes the above-described joined body, the ceramic substrate including the ceramic member, and the circuit layer including the Cu member formed on one surface of the ceramic substrate.
  • a first intermetallic compound layer, and a second intermetallic compound layer that is located between the first intermetallic compound layer and the Cu-Sn layer and contains P and Ti is formed. It is a feature.
  • the circuit layer and the second intermetallic compound layer are Bonding can be ensured, and the bonding strength between the circuit layer and the ceramic substrate can be ensured even when the operating environment temperature increases.
  • the Ti layer is not formed, or even if the Ti layer is formed, its thickness is as thin as 0.5 ⁇ m or less, so the thermal resistance in the stacking direction can be kept low, and it is mounted on the circuit layer. It is possible to efficiently dissipate heat from the semiconductor element.
  • a metal layer made of Al or an Al alloy may be formed on the other surface of the ceramic substrate.
  • the metal layer made of Al or Al alloy having relatively small deformation resistance is formed on the other surface of the ceramic substrate, the metal layer is preferentially applied when stress is applied to the power module substrate. The stress acting on the ceramic substrate can be reduced and cracking of the ceramic substrate can be suppressed.
  • a power module substrate includes the above-described joined body, the ceramic substrate including the ceramic member, a circuit layer formed on one surface of the ceramic substrate, and the ceramic substrate. And a metal layer made of the Cu member formed on the other surface, and located at the ceramic substrate side at a bonding interface between the ceramic substrate and the metal layer, and Sn is a solid solution in Cu A Sn layer, a first intermetallic compound layer that is located on the metal layer side and includes Cu and Ti, and is located between the first intermetallic compound layer and the Cu-Sn layer, and includes P and Ti. And a second intermetallic compound layer to be contained.
  • the metal layer and the second intermetallic compound layer are Bonding can be ensured, and the bonding strength between the metal layer and the ceramic substrate can be ensured even when the use environment temperature increases.
  • the Ti layer is not formed, or even if the Ti layer is formed, its thickness is as thin as 0.5 ⁇ m or less, so the thermal resistance in the stacking direction can be kept low, and it is mounted on the circuit layer. It is possible to efficiently dissipate heat from the semiconductor element.
  • a method of manufacturing a joined body according to one aspect of the present invention is a method of manufacturing a joined body of a ceramic member made of ceramic and a Cu member made of Cu or a Cu alloy, and includes a Cu—P—Sn-based brazing material and a Ti material.
  • Second heat treatment step for forming a compound layer It is characterized in that it comprises a.
  • the Cu—P—Sn brazing material is heated at a temperature lower than the melting start temperature of the Cu—P—Sn brazing material to cause the Cu member and the Ti material to react with each other. Since the first heat treatment step for forming the first intermetallic compound layer containing Ti and Ti is provided, the first intermetallic compound layer is surely formed, and the Cu member and the Ti material are reliably bonded. Can do. In this first heat treatment step, a part of the Ti material is left.
  • the Cu—P—Sn brazing material is heated at a temperature equal to or higher than the melting start temperature, and a Cu—Sn layer in which Sn is dissolved in Cu, and the first intermetallic compound Since the second heat treatment step of forming a second intermetallic compound layer containing P and Ti is provided between the layer and the Cu—Sn layer, the Ti of the Ti material is converted into Cu—P—. By reacting with the Sn-based brazing material, the second intermetallic compound layer can be formed, and the Cu member and the ceramic member can be reliably bonded. In the second heat treatment step, all of the Ti material may be reacted, or a part of the Ti material may be left to form a Ti layer having a thickness of 0.5 ⁇ m or less.
  • the heating temperature in the first heat treatment step is in a range of 580 ° C. or more and 670 ° C. or less, and the heating time is 30 minutes or more and 240 minutes or less. It is preferable to be within the range. In this case, since the heating temperature is 580 ° C. or more and the heating time is 30 minutes or more, the first intermetallic compound layer can be reliably formed. On the other hand, since the heating temperature is 670 ° C. or less and the heating time is 240 minutes or less, the first intermetallic compound layer is not formed thicker than necessary, and cracks occur in the first intermetallic compound layer. Can be suppressed.
  • the manufacturing method of the joined body which is 1 aspect of this invention is a manufacturing method of the joined body of the ceramic member which consists of ceramics, and Cu member which consists of Cu or Cu alloy, Comprising: Said Cu member and said Ti material A CuTi diffusion step in which Cu and Ti are diffused by heating in a laminated state to form a first intermetallic compound layer containing Cu and Ti between the Cu member and the Ti material; and a Cu-P-Sn system A laminating step of laminating the ceramic member, the Ti material on which the first intermetallic compound layer is formed, and the Cu member via a brazing material, and starting melting of the Cu—P—Sn based brazing material A second layer containing P and Ti, which is located between the Cu—Sn layer in which Sn is dissolved in Cu, the first intermetallic compound layer, and the Cu—Sn layer.
  • Heat treatment for forming an intermetallic compound layer Is characterized by comprising the steps, a.
  • the Cu member and the Ti material are heated in a stacked state to diffuse Cu and Ti, and Cu and Ti are contained between the Cu member and the Ti material. Since the CuTi diffusion step for forming the first intermetallic compound layer is provided, the first intermetallic compound layer can be reliably formed. In this CuTi diffusion step, a part of the Ti material is left. Further, in the CuTi diffusion process, since the Cu member and the Ti material are laminated and heated without laminating the brazing material, the heating conditions can be set relatively freely, and the first intermetallic compound layer is surely secured. And the thickness of the remaining Ti material can be adjusted with high accuracy.
  • the heating temperature in the CuTi diffusion step is in the range of 600 ° C. or more and 670 ° C. or less, and the heating time is in the range of 30 minutes or more and 360 minutes or less. It is preferable that In this case, since the heating temperature is 600 ° C. or more and the heating time is 30 minutes or more, the first intermetallic compound layer can be reliably formed. On the other hand, since the heating temperature is 670 ° C. or less and the heating time is 360 minutes or less, the first intermetallic compound layer is not formed thicker than necessary, and the first intermetallic compound layer is a starting point of cracking. Can be suppressed.
  • the load of the lamination direction may be in the range of 0.294 MPa or more and 1.96 MPa or less in the said CuTi diffusion process.
  • the load since the load is in the range of 0.294 MPa or more and 1.96 MPa or less, the first intermetallic compound layer can be reliably formed, and the bonding strength can be further increased.
  • it is 0.490 MPa or more and 1.47 MPa or less, and more preferably 1.18 MPa or more and 1.47 MPa or less.
  • a method for manufacturing a power module substrate according to an aspect of the present invention is a method for manufacturing a power module substrate in which a circuit layer made of Cu or a Cu alloy is disposed on one surface of a ceramic substrate, the ceramic substrate And the circuit layer are bonded by the above-described manufacturing method of the bonded body.
  • a Cu—Sn layer in which Sn is solid-solved in Cu at the bonding interface between the circuit layer and the ceramic substrate and Sn is dissolved in Cu, and the circuit layer side A first intermetallic compound layer containing Cu and Ti, a second intermetallic compound layer containing P and Ti, located between the first intermetallic compound layer and the Cu-Sn layer, , And the circuit layer and the ceramic substrate can be reliably bonded, and a power module substrate capable of efficiently dissipating heat with low thermal resistance in the stacking direction can be manufactured.
  • a circuit layer is disposed on one surface of the ceramic substrate, and a metal layer made of Cu or a Cu alloy is disposed on the other surface of the ceramic substrate.
  • a Cu—Sn layer in which Sn is solid-solved in Cu at the bonding interface between the metal layer and the ceramic substrate, and Sn is dissolved in Cu, and the circuit layer side A first intermetallic compound layer containing Cu and Ti, a second intermetallic compound layer containing P and Ti, located between the first intermetallic compound layer and the Cu-Sn layer, , And the metal layer and the ceramic substrate can be reliably bonded, and a power module substrate capable of efficiently dissipating heat with low thermal resistance in the stacking direction can be manufactured.
  • a circuit layer made of Cu or a Cu alloy is disposed on one surface of a ceramic substrate, and the other surface of the ceramic substrate is made of Al or an Al alloy.
  • a Cu—Sn layer in which Sn is solid-solved in Cu at the bonding interface between the circuit layer and the ceramic substrate and Sn is dissolved in Cu, and the circuit layer side A first intermetallic compound layer containing Cu and Ti, a second intermetallic compound layer containing P and Ti, located between the first intermetallic compound layer and the Cu-Sn layer, , And the circuit layer and the ceramic substrate can be reliably bonded, and a power module substrate capable of efficiently dissipating heat with low thermal resistance in the stacking direction can be manufactured.
  • circuit layer made of Cu or Cu alloy and the ceramic substrate can be bonded at a relatively low temperature, the circuit layer made of Cu or Cu alloy, the ceramic substrate, and the metal layer made of Al or Al alloy are bonded simultaneously. It is also possible to do.
  • the ceramic member and Cu member are joined favorably, and the joined body with low thermal resistance in the laminating direction, the power module substrate, the method for producing the joined body, and the production of the power module substrate A method can be provided.
  • the joined body according to the present embodiment is a power module substrate 10 in which a ceramic substrate 11 that is a ceramic member and a Cu plate 22 (circuit layer 12) that is a Cu member are joined.
  • the power module 1 provided with the board
  • the power module 1 includes a power module substrate 10 on which a circuit layer 12 is disposed, and a semiconductor element 3 bonded to one surface (upper surface in FIG. 1) of the circuit layer 12 via a bonding layer 2. ing.
  • the power module substrate 10 includes a ceramic substrate 11 and a circuit layer 12 disposed on one surface (the upper surface in FIG. 2) of the ceramic substrate 11.
  • the ceramic substrate 11 is made of ceramics such as AlN (aluminum nitride), Si 3 N 4 (silicon nitride), and Al 2 O 3 (alumina) having high insulating properties. In this embodiment, it is comprised with AlN (aluminum nitride) excellent in heat dissipation. Further, the thickness of the ceramic substrate 11 is set within a range of 0.2 to 1.5 mm, and in this embodiment is set to 0.635 mm.
  • the circuit layer 12 is formed by bonding a conductive metal plate of Cu or Cu alloy to one surface of the ceramic substrate 11.
  • the circuit layer 12 is formed by laminating a Cu—P—Sn brazing material 24 and a Cu plate 22 made of oxygen-free copper bonded with a Ti material 25 on one surface of the ceramic substrate 11. It is formed by processing and bonding a Cu plate 22 to the ceramic substrate 11 (see FIG. 5).
  • a Cu—P—Sn—Ni brazing material is used as the Cu—P—Sn brazing material 24.
  • the ceramic substrate 11 side has a structure in which Sn is diffused in Cu. Note that the thickness of the circuit layer 12 is set within a range of 0.1 mm or more and 1.0 mm or less, and is set to 0.3 mm in the present embodiment.
  • FIG. 3 shows a schematic explanatory diagram of the bonding interface between the ceramic substrate 11 and the circuit layer 12.
  • the bonding interface between the ceramic substrate 11 and the circuit layer 12 includes a Cu—Sn layer 14 located on the ceramic substrate 11 side, and a second layer containing Cu and Ti located on the circuit layer 12 side.
  • the Cu—Sn layer 14 is a layer in which Sn is dissolved in Cu.
  • the Cu—Sn layer 14 is a layer formed by incorporating P contained in the Cu—P—Sn brazing material 24 into the second intermetallic compound layer 17.
  • the first intermetallic compound layer 16 is a layer formed by mutual diffusion of Cu of the circuit layer 12 and Ti of the Ti material 25.
  • the diffusion of Cu and Ti is solid phase diffusion.
  • the first intermetallic compound layer 16 has one or more of a Cu 4 Ti phase, a Cu 3 Ti 2 phase, a Cu 4 Ti 3 phase, a CuTi phase, and a CuTi 2 phase.
  • the first intermetallic compound layer 16 has a Cu 4 Ti phase, a Cu 3 Ti 2 phase, a Cu 4 Ti 3 phase, a CuTi phase, and a CuTi 2 phase.
  • the thickness of the first intermetallic compound layer 16 is in the range of 0.2 ⁇ m to 6 ⁇ m.
  • the second intermetallic compound layer 17 is formed by combining P contained in the Cu—P—Sn brazing material 24 with Ti contained in the Ti material 25.
  • the second intermetallic compound layer 17 is composed of a P—Ni—Ti phase, a P—Ti phase, a Cu—Ni—Ti.
  • the phases are included, specifically, a P—Ni—Ti phase.
  • the thickness of the second intermetallic compound layer 17 is in the range of 0.5 ⁇ m to 4 ⁇ m.
  • the semiconductor element 3 is made of a semiconductor material such as Si.
  • the semiconductor element 3 and the circuit layer 12 are bonded via the bonding layer 2.
  • the bonding layer 2 is made of, for example, a Sn—Ag, Sn—In, or Sn—Ag—Cu solder material.
  • substrate 10 for power modules which concerns on this embodiment, and the power module 1 is demonstrated with reference to the flowchart of FIG. 4, and FIG.
  • the Cu plate 22 and the Ti material 25 to be the circuit layer 12 are laminated and placed in a vacuum heating furnace in a state of being pressurized in the lamination direction (pressure 1 to 35 kgf / cm 2 ).
  • the Cu plate 22 and the Ti material 25 are solid phase diffusion bonded to obtain a Cu—Ti bonded body 27. (CuTi diffusion step S01).
  • the thickness of the Ti material 25 is in the range of 0.4 ⁇ m to 5 ⁇ m.
  • the Ti material 25 is preferably formed by vapor deposition or sputtering when the thickness is 0.4 ⁇ m or more and less than 1 ⁇ m, and the foil material is preferably used when the thickness is 1 ⁇ m or more and 5 ⁇ m or less.
  • the lower limit of the thickness of the Ti material 25 is preferably 0.4 ⁇ m or more, and more preferably 0.5 ⁇ m or more.
  • the upper limit of the thickness of the Ti material 25 is preferably 1.5 ⁇ m or less, and more preferably 0.7 ⁇ m or less.
  • a Ti foil having a thickness of 1 ⁇ m and a purity of 99.8 mass% was used as the Ti material 25.
  • the Ti material 25 and the Cu plate 22 are joined by solid phase diffusion joining, and a laminated structure of the Cu plate 22 and the intermediate Ti layer 26 is formed.
  • an intermediate first intermetallic compound layer containing Cu and Ti is formed between the intermediate Ti layer 26 and the Cu plate 22.
  • the thickness of the intermediate Ti layer 26 is in the range of 0.1 ⁇ m to 3 ⁇ m. Note that the lower limit of the thickness of the intermediate Ti layer 26 is preferably 0.2 ⁇ m or more, and more preferably 0.4 ⁇ m or more.
  • the upper limit of the thickness of the intermediate Ti layer 26 is preferably 1.5 ⁇ m or less, and more preferably 1 ⁇ m or less. Furthermore, it is preferable that the thickness of the intermediate first intermetallic compound layer is 0.1 ⁇ m or more and 6 ⁇ m or less.
  • the pressure in the vacuum heating furnace is in the range of 10 ⁇ 6 Pa to 10 ⁇ 3 Pa
  • the heating temperature is in the range of 600 ° C. to 670 ° C.
  • the heating time is 30 minutes. It is set within the range of 360 minutes or less.
  • the intermediate first intermetallic compound layer can be sufficiently formed by setting the heating temperature to 600 ° C. or more and the heating time to 30 minutes or more. Moreover, it can suppress that an intermediate
  • the lower limit of the heating temperature is preferably 610 ° C. or higher, and more preferably 620 ° C. or higher.
  • the upper limit of the heating temperature is preferably 650 ° C. or less, more preferably 640 ° C. or less.
  • the lower limit of the heating time is preferably 15 minutes or more, and more preferably 60 minutes or more.
  • the upper limit of the heating time is preferably 120 minutes or less, and more preferably 90 minutes or less.
  • the pressure load in the stacking direction is 0.294 MPa to 1.96 MPa (3 kgf / cm 2 to 20 kgf / It is preferable to be within the range of cm 2 or less. More preferably, it is 0.490 MPa or more and 1.47 MPa or less, More preferably, it is good to set it in the range of 1.18 MPa or more and 1.47 MPa or less.
  • the Cu—P—Sn brazing material 24 and the Cu—Ti joined body 27 are sequentially laminated on one surface (the upper surface in FIG. 5) of the ceramic substrate 11 (lamination step S02).
  • the Cu—Ti joined body 27 is laminated so that the intermediate Ti layer 26 and the Cu—P—Sn brazing material 24 face each other.
  • the composition of the Cu—P—Sn brazing material 24 is Cu-7 mass% P-15 mass% Sn-10 mass% Ni, and its solidus temperature (melting start temperature) is 580 ° C. It is said that.
  • the Cu—P—Sn brazing material 24 is made of a foil material and has a thickness in the range of 5 ⁇ m to 150 ⁇ m.
  • the ceramic substrate 11, the Cu—P—Sn brazing material 24, and the Cu—Ti joined body 27 are charged in the stacking direction (pressure 1 to 35 kgf / cm 2 ) and placed in a vacuum heating furnace. And heated (heat treatment step S03).
  • the pressure in the vacuum heating furnace is in the range of 10 ⁇ 6 Pa to 10 ⁇ 3 Pa
  • the heating temperature is in the range of 600 ° C. to 700 ° C.
  • the heating time is set within a range of 15 minutes to 120 minutes.
  • the Cu—P—Sn brazing material 24 is melted to form a liquid phase, the intermediate Ti layer 26 is dissolved in this liquid phase, and the liquid phase is solidified.
  • the Cu plate 22 is joined.
  • P and Ni contained in the Cu—P—Sn-based brazing material 24 are combined with Ti in the intermediate Ti layer 26 to form the second intermetallic compound layer 17 and on the ceramic substrate 11 side.
  • a Cu—Sn layer 14 is formed.
  • the first intermetallic compound layer 16 is formed by leaving the intermediate first intermetallic compound layer.
  • the intermediate Ti layer 26 is a liquid phase of the Cu—P—Sn brazing material 24. All of it melts into the intermediate Ti layer 26 at the bonding interface between the ceramic substrate 11 and the circuit layer 12. As a result, the circuit layer 12 is formed on one surface of the ceramic substrate 11, and the power module substrate 10 according to this embodiment is manufactured.
  • the semiconductor element 3 is bonded to the upper surface of the circuit layer 12 of the power module substrate 10 via a solder material (semiconductor element bonding step S04). In this way, the power module 1 according to this embodiment is manufactured.
  • the bonding interface between the ceramic substrate 11 and the circuit layer 12 is located on the circuit layer 12 side and contains Cu and Ti. Since the first intermetallic compound layer 16 is formed, the circuit layer 12 and the second intermetallic compound layer 17 can be reliably bonded via the first intermetallic compound layer 16. Therefore, the bonding strength between the circuit layer 12 and the ceramic substrate 11 can be ensured even when the use environment temperature becomes high. Further, since the Ti layer is not formed at the bonding interface between the ceramic substrate 11 and the circuit layer 12, the thermal resistance in the stacking direction of the circuit layer 12 and the ceramic substrate 11 can be suppressed, and the circuit layer 12 is mounted on the circuit layer 12. The heat generated from the semiconductor element 3 can be efficiently radiated.
  • the thickness of the 1st intermetallic compound layer 16 since the thickness of the 1st intermetallic compound layer 16 shall be 0.2 micrometer or more, the joining strength of the circuit layer 12 and the ceramic substrate 11 can be improved reliably. On the other hand, since the thickness of the first intermetallic compound layer 16 is 6 ⁇ m or less, the occurrence of cracks in the first intermetallic compound layer 16 can be suppressed. In order to improve the bonding strength between the circuit layer 12 and the ceramic substrate 11 with certainty, the lower limit of the thickness of the first intermetallic compound layer 16 is preferably 0.5 ⁇ m or more, and preferably 1 ⁇ m or more. Is more preferable.
  • the thickness of the 1st intermetallic compound layer 16 may be thicker than the thickness of the intermediate first intermetallic compound layer due to the diffusion of Ti by heating in the heat treatment step S03.
  • the thickness of the second intermetallic compound layer 17 is 0.5 ⁇ m or more, the bonding strength between the circuit layer 12 and the ceramic substrate 11 can be reliably improved.
  • the thickness of the second intermetallic compound layer 17 is 4 ⁇ m or less, the occurrence of cracks in the second intermetallic compound layer 17 can be suppressed.
  • the lower limit of the thickness of the second intermetallic compound layer 17 is preferably 1 ⁇ m or more, and more preferably 2 ⁇ m or more. preferable.
  • the upper limit of the thickness of the 2nd intermetallic compound layer 17 into 3.5 micrometers or less, and to set it as 3 micrometers or less. Is more preferable.
  • the Cu plate 22 that becomes the circuit layer 12 and the Ti material 25 are stacked and pressed in the stacking direction (pressure 1 to 35 kgf / cm 2 ). Since there is a CuTi diffusion step S01 in which the Cu plate 22 and the Ti material 25 are placed in a vacuum heating furnace and heated to cause solid phase diffusion bonding to obtain a Cu—Ti joined body 27, the Cu plate 22 and intermediate Ti are provided. An intermediate first intermetallic compound layer containing Cu and Ti can be reliably formed between the layers 26.
  • the thickness of the intermediate Ti layer 26 is in the range of 0.1 ⁇ m or more and 3 ⁇ m or less, the intermediate Ti layer 26 and the Cu—P—Sn brazing material 24 Can be reacted. Further, in the CuTi diffusion step S01, the Cu plate 22 and the Ti material 25 are laminated and heated, and the Cu—P—Sn brazing material 24 is not laminated. It can be set freely.
  • the ceramic substrate 11, the Cu—P—Sn brazing material 24, and the Cu—Ti joined body 27 are pressurized in the stacking direction (pressure 1 to 35 kgf / cm 2).
  • the heat treatment step S03 is performed in which the heat treatment is performed by charging in a vacuum heating furnace, so that the second Ti can be reacted with the Cu—P—Sn brazing material 24 by reacting the Ti of the intermediate Ti layer 26 with the second heat treatment step 24.
  • the intermetallic compound layer 17 can be formed, and the circuit layer 12 and the ceramic substrate 11 can be reliably bonded.
  • the pressure applied is 1 kgf / cm 2 or more
  • the liquid phase of the ceramic substrate 11 and the Cu—P—Sn brazing material 24 can be brought into close contact, and the ceramic substrate 11 And the Cu—Sn layer 14 can be bonded satisfactorily.
  • the pressurized pressure is 35 kgf / cm 2 or less, the occurrence of cracks in the ceramic substrate 11 can be suppressed.
  • the pressure pressurized is set to 1 kgf / cm 2 or more 35 kgf / cm 2 within the following ranges.
  • FIG. 6 shows a power module 101 including the power module substrate 110 according to the second embodiment.
  • This power module 101 includes a power module substrate 110 on which a circuit layer 112 and a metal layer 113 are disposed, and a semiconductor element bonded to one surface (upper surface in FIG. 6) of the circuit layer 112 via a bonding layer 2. 3 and a heat sink 130 disposed on the other side of the metal layer 113 (lower side in FIG. 6).
  • the power module substrate 110 includes a ceramic substrate 11, a circuit layer 112 disposed on one surface of the ceramic substrate 11 (upper surface in FIG. 7), and the other surface of the ceramic substrate 11. And a metal layer 113 disposed on the lower surface in FIG.
  • the ceramic substrate 11 is made of AlN (aluminum nitride) with excellent heat dissipation.
  • the circuit layer 112 is formed by sequentially laminating a Cu—P—Sn-based brazing material 124, a Ti material 25, and a Cu plate 122 made of oxygen-free copper on one surface of the ceramic substrate 11, and performing a heat treatment. Then, it is formed by bonding a Cu plate 122 to the ceramic substrate 11 (see FIG. 10).
  • the thickness of the circuit layer 112 is set within a range of 0.1 mm or more and 1.0 mm or less, and is set to 0.3 mm in the present embodiment.
  • the metal layer 113 is formed by bonding a Cu or Cu alloy metal plate to the other surface of the ceramic substrate 11 via a Cu—P—Sn brazing material 124.
  • the metal layer 113 is formed by laminating a Cu-P-Sn-based brazing material 124, a Ti material 25, and a Cu plate 123 made of oxygen-free copper on the other surface of the ceramic substrate 11, and heat-treating the ceramic substrate.
  • 11 is formed by bonding a Cu plate 123 (see FIG. 10).
  • the thickness of the metal layer 113 is set within a range of 0.1 mm or more and 1.0 mm or less, and is set to 0.3 mm in the present embodiment.
  • a Cu—P—Sn—Ni brazing material is specifically used as the Cu—P—Sn brazing material 124.
  • FIG. 8 is a schematic explanatory diagram of the bonding interface between the ceramic substrate 11 and the circuit layer 112 (metal layer 113).
  • the Cu—Sn layer 14 located on the ceramic substrate 111 side and the circuit layer 112 (metal layer 113) side are provided.
  • a first intermetallic compound layer 16 located between Cu and Ti, and a second intermetallic compound layer located between the first intermetallic compound layer 16 and the Cu—Sn layer 14 and containing P and Ti. 17 are formed.
  • a Ti layer 15 is formed between the first intermetallic compound layer 16 and the second intermetallic compound layer 17, and the thickness of the Ti layer 15 is 0.5 ⁇ m or less.
  • the thickness of the first intermetallic compound layer 16 is in the range of 0.2 ⁇ m to 6 ⁇ m.
  • the thickness of the second intermetallic compound layer 17 is in the range of 0.5 ⁇ m to 4 ⁇ m.
  • the heat sink 130 dissipates heat from the power module substrate 110 described above.
  • the heat sink 130 is made of Cu or Cu alloy, and is made of phosphorous deoxidized copper in this embodiment.
  • the heat sink 130 is provided with a flow path 131 through which a cooling fluid flows.
  • the heat sink 130 and the metal layer 113 are joined by a solder layer 132 made of a solder material.
  • a Cu—P—Sn brazing material 124, a Ti material 25, and a Cu plate 122 to be a circuit layer 112 are sequentially laminated on one surface (the upper surface in FIG. 10) of the ceramic substrate 11.
  • the Cu—P—Sn brazing material 124, the Ti material 25, and the Cu plate 123 to be the metal layer 113 are sequentially laminated on the other surface (the lower surface in FIG. 10) of the ceramic substrate 11 (lamination step S101).
  • the Cu—P—Sn brazing material 124 is disposed on the ceramic substrate 11 side
  • the Ti material 25 is disposed on the Cu plates 122 and 123 side.
  • the composition of the Cu—P—Sn brazing material 124 is Cu—6.3 mass%, P—9.3 mass%, Sn—7 mass% Ni, and the solidus temperature (melting start temperature). ) Is 600 ° C.
  • the Cu—P—Sn brazing material 124 is made of a foil material and has a thickness in the range of 5 ⁇ m to 150 ⁇ m.
  • the thickness of the Ti material 25 is in the range of 0.4 ⁇ m to 5 ⁇ m.
  • the Ti material 25 is preferably formed by vapor deposition or sputtering when the thickness is 0.4 ⁇ m or more and less than 1 ⁇ m, and the foil material is preferably used when the thickness is 1 ⁇ m or more and 5 ⁇ m or less.
  • the lower limit of the thickness of the Ti material 25 is preferably 0.4 ⁇ m or more, and more preferably 0.5 ⁇ m or more.
  • the upper limit of the thickness of the Ti material 25 is preferably 1.5 ⁇ m or less, and more preferably 0.7 ⁇ m or less.
  • a Ti foil having a thickness of 1 ⁇ m and a purity of 99.8 mass% was used as the Ti material 25.
  • the Cu plate 122, the Ti material 25, the Cu—P—Sn brazing material 124, the ceramic substrate 11, the Cu—P—Sn based brazing material 124, the Ti material 25, and the Cu plate 123 are pressed in the stacking direction. (pressure 1 kgf / cm 2 or more 35 kgf / cm 2 or less) in a state, charged into a vacuum heating furnace, heating at a temperature below the melting initiation temperature of the Cu-P-Sn based brazing material 124 (first heat treatment Step S102).
  • the Ti material 25 and the Cu plate 122, and the Ti material 25 and the Cu plate 123 are joined by solid phase diffusion bonding, and between the Ti material 25 and the Cu plate 122 and between the Ti material 25 and the Cu plate 122.
  • a first intermetallic compound layer 16 containing Cu and Ti is formed between the plate 123 and the plate 123.
  • the pressure in the vacuum heating furnace is in the range of 10 ⁇ 6 Pa to 10 ⁇ 3 Pa
  • the heating temperature is in the range of 580 ° C. to 670 ° C.
  • the heating time is 30 minutes or more. It is set within the range of 240 minutes or less.
  • the heating temperature in the first heat treatment step S102 is set to the melting start temperature (solidus line) of the Cu—P—Sn brazing material 124. Temperature) is preferably ⁇ 10 ° C.
  • the first intermetallic compound layer 16 can be sufficiently formed by setting the heating temperature to 580 ° C. or more and the heating time to 30 minutes or more.
  • the lower limit of the heating temperature is preferably 610 ° C. or higher, and more preferably 620 ° C. or higher.
  • the upper limit of the heating temperature is preferably 650 ° C. or less, more preferably 640 ° C. or less.
  • the lower limit of the heating time is preferably 15 minutes or more, and more preferably 60 minutes or more.
  • the upper limit of the heating time is preferably 120 minutes or less, and more preferably 90 minutes or less.
  • pressure 123 in the stacking direction pressure 1 kgf / cm 2 or more 35 kgf / cm 2 or less
  • the pressure in the vacuum heating furnace is in the range of 10 ⁇ 6 Pa to 10 ⁇ 3 Pa
  • the heating temperature is in the range of 600 ° C. to 700 ° C.
  • the heating time is 15 minutes or more.
  • the second heat treatment step S103 in order to reliably melt the Cu—P—Sn brazing material 124, it is preferable to heat the Cu—P—Sn brazing material 124 at a solidus temperature of + 10 ° C. or higher. .
  • the Cu—P—Sn brazing material 124 is melted to form a liquid phase, the Ti material 25 is dissolved in the liquid phase, and the liquid phase is solidified.
  • Cu plate 122 and ceramic substrate 11 and Cu plate 123 are joined together.
  • P and Ni contained in the Cu—P—Sn based brazing material 124 are bonded to Ti of the Ti material 25 to form the second intermetallic compound layer 17, and on the ceramic substrate 11 side, Cu -The Sn layer 14 is formed.
  • a part of the Ti material 25 remains without being dissolved in the liquid phase of the Cu—P—Sn brazing material 124, and the first intermetallic compound layer 16 and the second intermetallic compound layer 17.
  • Ti layer 15 is formed between the two.
  • the circuit layer 112 is formed on one surface of the ceramic substrate 11 and the metal layer 113 is formed on the other surface, and the power module substrate 110 according to the present embodiment is manufactured.
  • the heat sink 130 is bonded to the lower surface of the metal layer 113 of the power module substrate 110 via a solder material (heat sink bonding step S104).
  • the semiconductor element 3 is bonded to the upper surface of the circuit layer 112 of the power module substrate 110 via a solder material (semiconductor element bonding step S105). In this way, the power module 101 according to this embodiment is manufactured.
  • the circuit layer 112 side at the bonding interface between the ceramic substrate 11 and the circuit layer 112 and at the bonding interface between the ceramic substrate 11 and the metal layer 113. Since the first intermetallic compound layer 16 containing Cu and Ti is formed on the metal layer 113 side, the circuit layer 112 and the second intermetallic compound are interposed via the first intermetallic compound layer 16. The layer 17 and the metal layer 113 and the second intermetallic compound layer 17 can be reliably bonded. Therefore, the bonding strength between the circuit layer 112 and the ceramic substrate 11 and the metal layer 113 and the ceramic substrate 11 can be ensured even when the use environment temperature becomes high.
  • the Ti layer 15 is formed at the bonding interface between the ceramic substrate 11 and the circuit layer 112 and the bonding interface between the ceramic substrate 11 and the metal layer 113, the thickness is 0.5 ⁇ m or less.
  • the thermal resistance in the stacking direction of the circuit layer 112, the ceramic substrate 11, and the metal layer 113 can be kept low, and the heat generated from the semiconductor element 3 mounted on the circuit layer 112 can be efficiently radiated.
  • the thickness of the first intermetallic compound layer 16 is 0.2 ⁇ m or more, the bonding strength between the circuit layer 112 and the ceramic substrate 11 and between the metal layer 113 and the ceramic substrate 11 is ensured. Can be improved. On the other hand, since the thickness of the first intermetallic compound layer 16 is 6 ⁇ m or less, the occurrence of cracks in the first intermetallic compound layer 16 can be suppressed.
  • the thickness of the second intermetallic compound layer 17 is 0.5 ⁇ m or more, the bonding strength between the circuit layer 112 and the ceramic substrate 11 and between the metal layer 113 and the ceramic substrate 11 is ensured. Can be improved. On the other hand, since the thickness of the second intermetallic compound layer 17 is 4 ⁇ m or less, the occurrence of cracks in the second intermetallic compound layer 17 can be suppressed.
  • the second intermetallic compound layer 17 can be formed by reacting the Ti of the Ti material 25 with the Cu—P—Sn brazing material 124, and the circuit layer 112, the ceramic substrate 11, and the metal layer can be formed. 113 and the ceramic substrate 11 can be reliably bonded.
  • the pressure applied is 1 kgf / cm 2 or more
  • the liquid phase of the ceramic substrate 11 and the Cu—P—Sn brazing material 124 can be brought into close contact with each other.
  • the substrate 11 and the Cu—Sn layer 14 can be bonded satisfactorily.
  • the pressurized pressure is 35 kgf / cm 2 or less, the occurrence of cracks in the ceramic substrate 11 can be suppressed.
  • the pressure pressurized is set to 1 kgf / cm 2 or more 35 kgf / cm 2 within the following ranges.
  • the circuit layer 112 is bonded to one surface of the ceramic substrate 11 and the metal layer 113 is bonded to the other surface at the same time.
  • the manufacturing process can be simplified and the manufacturing cost can be reduced.
  • FIG. 11 shows a power module 201 including a power module substrate 210 according to the third embodiment.
  • This power module 201 includes a power module substrate 210 on which a circuit layer 212 and a metal layer 213 are disposed, and a semiconductor element bonded to one surface (upper surface in FIG. 11) of the circuit layer 212 via a bonding layer 2. 3 and a heat sink 230 bonded to the other side (lower side in FIG. 11) of the power module substrate 210.
  • the power module substrate 210 includes a ceramic substrate 11, a circuit layer 212 disposed on one surface (the upper surface in FIG. 12) of the ceramic substrate 11, and the other surface of the ceramic substrate 11. And a metal layer 213 disposed on the lower surface in FIG.
  • the ceramic substrate 11 is made of AlN (aluminum nitride) with excellent heat dissipation.
  • the circuit layer 212 is formed by laminating a Cu-P-Sn-based brazing material 224, a Ti material 25, and a Cu plate 222 made of oxygen-free copper on one surface of the ceramic substrate 11, and heat-treating it. It is formed by bonding a Cu plate 222 to the ceramic substrate 11 (see FIG. 15).
  • the thickness of the circuit layer 212 is set within a range of 0.1 mm or more and 1.0 mm or less, and is set to 0.3 mm in the present embodiment.
  • a Cu—P—Sn—Ni brazing material is specifically used as the Cu—P—Sn brazing material 224.
  • the bonding interface between the ceramic substrate 11 and the circuit layer 212 includes a Cu—Sn layer 14 located on the ceramic substrate 11 side and a Cu—Ti layer located on the circuit layer 212 side. And a second intermetallic compound layer 17 that is located between the first intermetallic compound layer 16 and the Cu—Sn layer 14 and contains P and Ti is formed. .
  • a Ti layer 15 is formed between the first intermetallic compound layer 16 and the second intermetallic compound layer 17, and the thickness of the Ti layer 15 is 0.5 ⁇ m or less.
  • the metal layer 213 is formed by bonding an Al plate made of Al or an Al alloy to the other surface of the ceramic substrate 11.
  • the metal layer 213 is formed by bonding an Al plate 223 having a purity of 99.99 mass% or more to the other surface of the ceramic substrate 11 (see FIG. 15).
  • the thickness of the metal layer 213 is set within a range of 0.1 mm to 3.0 mm, and is set to 1.6 mm in the present embodiment.
  • the heat sink 230 is made of Al or an Al alloy, and is made of A6063 (Al alloy) in the present embodiment.
  • the heat sink 230 is provided with a flow path 231 through which a cooling fluid flows.
  • the heat sink 230 and the metal layer 213 are joined by an Al—Si brazing material.
  • a method for manufacturing the power module 201 according to the present embodiment will be described with reference to the flowchart of FIG. 14 and FIG.
  • a Cu plate 222 and a Ti material 25 to be the circuit layer 212 are laminated, and placed in a vacuum heating furnace in a state of being pressurized (pressure 1 to 35 kgf / cm 2 ) in the lamination direction.
  • pressure 1 to 35 kgf / cm 2 pressure 1 to 35 kgf / cm 2
  • the thickness of the Ti material 25 is in the range of 0.4 ⁇ m to 5 ⁇ m.
  • the Ti material 25 is preferably formed by vapor deposition or sputtering when the thickness is 0.4 ⁇ m or more and less than 1 ⁇ m, and the foil material is preferably used when the thickness is 1 ⁇ m or more and 5 ⁇ m or less.
  • the lower limit of the thickness of the Ti material 25 is preferably 0.4 ⁇ m or more, and more preferably 0.5 ⁇ m or more.
  • the upper limit of the thickness of the Ti material 25 is preferably 1.5 ⁇ m or less, and more preferably 0.7 ⁇ m or less.
  • a Ti foil having a thickness of 1.4 ⁇ m and a purity of 99.8 mass% is used as the Ti material 25.
  • the pressure in the vacuum heating furnace is in the range of 10 ⁇ 6 Pa to 10 ⁇ 3 Pa
  • the heating temperature is in the range of 600 ° C. to 670 ° C.
  • the heating time is 30 minutes. It is set within the range of 360 minutes or less.
  • the intermediate first intermetallic compound layer can be sufficiently formed by setting the heating temperature to 600 ° C. or more and the heating time to 30 minutes or more. Moreover, it can suppress that an intermediate
  • the lower limit of the heating temperature is preferably 610 ° C.
  • the upper limit of the heating temperature is preferably 650 ° C. or less, more preferably 640 ° C. or less.
  • the lower limit of the heating time is preferably 15 minutes or more, and more preferably 60 minutes or more.
  • the upper limit of the heating time is preferably 120 minutes or less, and more preferably 90 minutes or less.
  • the pressure load in the stacking direction is 0.294 MPa to 1.96 MPa (3 kgf / cm 2 to 20 kgf / It is preferable to be within the range of cm 2 or less. More preferably, it is 0.490 MPa or more and 1.47 MPa or less, More preferably, it is good to set it in the range of 1.18 MPa or more and 1.47 MPa or less.
  • the Ti material 25 and the Cu plate 222 are bonded by solid phase diffusion bonding, and a laminated structure of the Cu plate 222 and the intermediate Ti layer 26 is formed.
  • an intermediate first intermetallic compound layer containing Cu and Ti is formed between the intermediate Ti layer 26 and the Cu plate 222.
  • the thickness of the intermediate Ti layer 26 is in the range of 0.1 ⁇ m to 3 ⁇ m.
  • the lower limit of the thickness of the intermediate Ti layer 26 is preferably 0.2 ⁇ m or more, and more preferably 0.4 ⁇ m or more. Further, the upper limit of the thickness of the intermediate Ti layer 26 is preferably 1.5 ⁇ m or less, and more preferably 0.7 ⁇ m or less. Furthermore, it is preferable that the thickness of the intermediate first intermetallic compound layer is 0.1 ⁇ m or more and 6 ⁇ m or less.
  • a Cu—P—Sn brazing material 224, a Ti material 25, and a Cu plate 222 are sequentially laminated on one surface (the upper surface in FIG. 15) of the ceramic substrate 11, and the ceramic substrate.
  • an Al plate 223 to be the metal layer 213 is sequentially laminated on the other surface (lower surface in FIG. 14) with a bonding material 241 interposed therebetween.
  • the heat sink 230 is laminated below the Al plate 223 via the bonding material 242 (lamination step S202).
  • the Cu—Ti joined body 227 is laminated so that the intermediate Ti layer 26 and the Cu—P—Sn brazing material 224 face each other.
  • the composition of the Cu—P—Sn brazing material 224 is Cu-7 mass% P-15 mass% Sn-10 mass% Ni, and its melting start temperature (solidus temperature) is 580 ° C. It is said that.
  • the Cu—P—Sn brazing material 224 is made of a foil material and has a thickness in the range of 5 ⁇ m to 150 ⁇ m.
  • the bonding materials 241 and 242 are Al—Si brazing materials containing Si as a melting point lowering element.
  • Al—7.5 mass% Si brazing material is used. The material is used.
  • the ceramic substrate 11, the Cu—P—Sn brazing material 224, the Cu—Ti joined body 227, the joining material 241, the Al plate 223, the joining material 242 and the heat sink 230 are pressurized in the laminating direction (pressure 1 to 35 kgf). / Cm 2 ), the sample is charged into a vacuum heating furnace and heated (heat treatment step S203).
  • the pressure in the vacuum heating furnace is in the range of 10 ⁇ 6 Pa to 10 ⁇ 3 Pa
  • the heating temperature is in the range of 600 ° C. to 650 ° C.
  • the heating time is 30 minutes or more. It is set within the range of 240 minutes or less.
  • the Cu—P—Sn brazing material 224 is melted to form a liquid phase, and the intermediate Ti layer 26 is dissolved in this liquid phase, and the liquid phase is solidified.
  • the Cu plate 222 is joined.
  • P and Ni contained in the Cu—P—Sn-based brazing material 224 are combined with Ti of the intermediate Ti layer 26 to form the second intermetallic compound layer 17 and on the ceramic substrate 11 side.
  • a Cu—Sn layer 14 is formed.
  • the first intermetallic compound layer 16 is formed by leaving the intermediate first intermetallic compound layer.
  • the intermediate Ti layer 26 is in the range of 0.1 ⁇ m or more and 3 ⁇ m or less, the intermediate Ti layer 26 is in the liquid phase of the Cu—P—Sn-based brazing material 224. All is not melted and a part of it remains, and the Ti layer 15 is formed. However, since the thickness of the Ti layer 15 is as thin as 0.5 ⁇ m or less, the thermal resistance in the stacking direction of the circuit layer 212, the ceramic substrate 11, and the metal layer 213 can be kept low. Heat generated from the semiconductor element 3 mounted thereon can be efficiently radiated.
  • the thickness of the first intermetallic compound layer 16 may become thicker than the thickness of the intermediate first intermetallic compound layer due to the diffusion of Ti by heating in the heat treatment step S203. Further, the thickness of the Ti layer 15 may become thinner than the thickness of the intermediate Ti layer 26 due to the diffusion of Ti by heating in the heat treatment step S203.
  • the bonding material 241 is melted to form a liquid phase, and the liquid phase is solidified, so that the ceramic substrate 11 and the Al plate 223 are bonded via the bonding material 241. Further, in the heat treatment step S ⁇ b> 203, the bonding material 242 is melted to form a liquid phase, and the liquid phase is solidified, whereby the Al plate 223 and the heat sink 230 are bonded via the bonding material 242. Thereby, the substrate 210 for power modules which is this embodiment is manufactured.
  • the semiconductor element 3 is bonded to the upper surface of the circuit layer 212 of the power module substrate 210 via a solder material (semiconductor element bonding step S204). In this way, the power module 201 according to this embodiment is manufactured.
  • the power module substrate 210 according to the present embodiment configured as described above has the same effects as the power module substrates 10 and 110 described in the first and second embodiments. Further, in the power module substrate 210 according to the present embodiment, the metal layer 213 formed by bonding the Al plate 223 to the other surface of the ceramic substrate 11 is formed. It can be efficiently dissipated through the layer 213. Further, since Al has a relatively low deformation resistance, the thermal stress generated between the power module substrate 210 and the heat sink 230 is absorbed by the metal layer 213 when a cooling cycle is applied, and the ceramic substrate 11 is not cracked. Occurrence can be suppressed.
  • the circuit layer 212 is bonded to one surface of the ceramic substrate 11 and the metal layer 213 is simultaneously bonded to the other surface.
  • the manufacturing process can be simplified and the manufacturing cost can be reduced.
  • the power module is configured by mounting a semiconductor element on an insulating circuit board.
  • the present invention is not limited to this.
  • an LED module may be configured by mounting LED elements on a circuit layer of an insulated circuit board, or a thermoelectric module may be configured by mounting thermoelectric elements on a circuit layer of an insulated circuit board.
  • the case where the circuit layer is bonded to one surface of the ceramic substrate and the metal layer is simultaneously bonded to the other surface has been described. However, the circuit layer and the metal layer are separately provided. You may join.
  • the case where the circuit layer, the metal layer, and the heat sink are simultaneously bonded has been described. However, the circuit layer and the metal layer may be bonded to the ceramic substrate, and then the metal layer and the heat sink may be bonded. good.
  • the case where the metal layer is bonded to the other surface of the ceramic substrate via the Al—Si brazing material has been described, but the bonding is performed by a transient liquid phase bonding method (TLP), Ag paste, or the like. May be.
  • TLP transient liquid phase bonding method
  • the heat sink provided with the flow path has been described in the second embodiment and the third embodiment, a plate-like thing called a heat radiating plate or a pin-like fin may be used.
  • the power module substrate and the heat sink may be fixed by screwing or the like via grease.
  • the heat sink may not be bonded to the other surface side of the power module substrate.
  • the case where a Ti foil is used as the Ti material or the case where the Ti material is formed by vapor deposition or sputtering has been described.
  • Ti is formed on one surface of the Cu member. It is also possible to use a Cu member / Ti clad material in which is disposed.
  • the first intermetallic compound layer containing Cu and Ti may be formed by heating the Cu member / Ti clad material in advance, or in the Cu member / Ti clad material in the first heat treatment step. A first intermetallic compound layer may be formed.
  • a Ti material / brazing material clad material in which a Cu—P—Sn based brazing material is disposed on one surface of the Ti material, a Cu member, a Ti material, and a Cu—P—Sn based brazing material are laminated in this order.
  • Member / Ti material / brazing material clad can be used.
  • a Cu—P—Sn brazing material suitable for the method for producing a joined body of the present invention will be described in detail.
  • the P content of the Cu—P—Sn brazing material is preferably 3 mass% or more and 10 mass% or less.
  • P is an element having an effect of lowering the melting start temperature of the brazing material. Moreover, this P prevents oxidation of the brazing filler metal by covering the surface of the brazing filler metal with the P oxide generated by oxidation of P, and the surface of the molten brazing filler metal has good fluidity. It is an element having an effect of improving the wettability of the brazing material by covering. If the P content is less than 3 mass%, the effect of lowering the melting start temperature of the brazing material cannot be sufficiently obtained, the melting start temperature of the brazing material is increased, or the fluidity of the brazing material is insufficient.
  • the bondability with the layer may decrease.
  • the P content exceeds 10 mass%, a large amount of brittle intermetallic compounds are formed, and the bonding properties and bonding reliability between the ceramic substrate and the circuit layer may be reduced.
  • the content of P contained in the Cu—P—Sn brazing material is preferably in the range of 3 mass% to 10 mass%.
  • the Sn content of the Cu—P—Sn brazing material is preferably 0.5 mass% or more and 25 mass% or less.
  • Sn is an element having an effect of lowering the melting start temperature of the brazing material.
  • the Sn content is 0.5 mass% or more, the melting start temperature of the brazing material can be reliably lowered.
  • the Sn content is 25 mass% or less, the low temperature embrittlement of the brazing material can be suppressed, and the bonding reliability between the ceramic substrate and the circuit layer can be improved.
  • the Sn content in the Cu—P—Sn brazing material is preferably in the range of 0.5 mass% to 25 mass%.
  • the Cu—P—Sn brazing material may contain 2 mass% or more and 20 mass% or less of any one or more of Ni, Cr, Fe, and Mn.
  • Ni, Cr, Fe, and Mn are elements having an effect of suppressing the formation of an intermetallic compound containing P at the interface between the ceramic substrate and the brazing material.
  • the content of one or more of Ni, Cr, Fe, and Mn is 2 mass% or more, the formation of intermetallic compounds containing P at the bonding interface between the ceramic substrate and the brazing material is suppressed. This improves the bonding reliability between the ceramic substrate and the circuit layer.
  • the content of any one or more of Ni, Cr, Fe, and Mn is 20 mass% or less, an increase in the melting start temperature of the brazing material is suppressed, and the fluidity of the brazing material is lowered. This can suppress this and improve the bondability between the ceramic substrate and the circuit layer.
  • the content is within the range of 2 mass% or more and 20 mass% or less. It is preferable to do.
  • the above-described laminate was placed in a vacuum heating furnace (pressure: 10 ⁇ 4 Pa), and heated as a first heat treatment step at the temperature and time shown in Table 1 (column of heat treatment 1). Thereafter, as the second heat treatment step, the Cu plate is joined to one surface and the other surface of the ceramic substrate by heating at the temperature and time shown in Table 2 (column of heat treatment 2), and the circuit layer and metal A layer was formed to obtain a power module substrate.
  • the size of the Cu plate for the circuit layer is 44 mm ⁇ 25 mm for 90 ° peel strength test described later (however, it protrudes 5 mm from the end of the ceramic substrate), and 37 mm ⁇ 37 mm for the thermal resistance test, Each was produced.
  • the size of the Cu plate for the metal layer was 37 mm ⁇ 37 mm.
  • one surface of the ceramic substrate shown in Table 1 (40 mm ⁇ 40 mm, thickness 0.635 mm for AlN and Al 2 O 3 , thickness 0.32 mm for Si 3 N 4 ) and the other surface
  • a Cu—P—Sn-based brazing foil and a Cu—Ti joined body shown in Table 1 are sequentially laminated. And it heats with the temperature and time (column of the heat processing 2) of Table 2, and joins Cu board to the one side and the other side of a ceramic substrate, forms a circuit layer and a metal layer, The board
  • substrate for power modules was made.
  • the size of the Cu plate for the circuit layer and the metal layer was the same as described above.
  • a Cu plate was bonded to one surface and the other surface of the ceramic substrate to form a circuit layer and a metal layer to obtain a power module substrate.
  • the size of the Cu plate for the circuit layer and the metal layer was the same as the example of the present invention.
  • the power module substrate obtained as described above was evaluated for 90 ° peel strength between the circuit layer and the ceramic substrate and the thermal resistance in the stacking direction. Moreover, the thickness of the 1st intermetallic compound layer, Ti layer, and 2nd intermetallic compound layer was evaluated in the joining interface of a ceramic substrate and a circuit layer with respect to the obtained board
  • the thicknesses of the first intermetallic compound layer, the Ti layer and the second intermetallic compound layer are formed at the bonding interface from the EPMA at the Cu plate / ceramics substrate interface in a field of view of 10,000 times magnification (length 30 ⁇ m, width 40 ⁇ m).
  • the total area of the first intermetallic compound layer, the area of the Ti layer, and the total area of the second intermetallic compound layer are measured and divided by the width of the measurement visual field, and the average of the five visual fields is calculated between the first metal
  • the thicknesses of the compound layer, the Ti layer, and the second intermetallic compound layer were used.
  • the intermediate first intermetallic compound layer and the intermediate Ti layer have a 10,000 ⁇ field of view (length 30 ⁇ m, horizontal width) from the EPMA with respect to the Cu / Ti bonding interface of the Cu—Ti bonded body prepared by the heating method B described above. 40 ⁇ m), the total area of the intermediate first intermetallic compound layer formed at the bonding interface and the total area of the intermediate Ti layer are measured and divided by the width of the measurement visual field, and the average of the five visual fields is obtained.
  • the thickness of the intermediate first intermetallic compound layer and the intermediate Ti layer was used. Note that regions where the Ti concentration is in the range of 15 at% to 70 at% are regarded as the first intermetallic compound layer and the intermediate first intermetallic compound layer, and solid solutions are not included.
  • the second intermetallic compound layer includes at least P and Ti, and the P concentration is a region in the range of 28 at% to 52 at%. The evaluation results are shown in Tables 1 and 2.
  • Example 1 In Conventional Example 1 in which the Ti layer was formed thick, it was confirmed that although the 90 ° peel strength was high, the thermal resistance in the stacking direction was high. Further, in Conventional Example 2 in which no Ti layer was confirmed, it was confirmed that the first intermetallic compound layer was not formed and the 90 ° peel strength was low. On the other hand, in Examples 1 to 15 of the present invention, it was confirmed that a power module substrate having a high 90 ° peel strength and a low thermal resistance was obtained.
  • Example 2 Next, a more severe peel strength test was conducted.
  • a CuTi diffusion process a Cu plate (thickness: 0.3 mm) made of oxygen-free copper and a Ti material having a thickness of 3 mm are stacked, and the vacuum heating furnace is pressed in the stacking direction with the pressure shown in Table 3 The inside (pressure: 10 ⁇ 4 Pa) was charged and heated at the temperature and time shown in Table 3 (column of heat treatment 1) to obtain a Cu—Ti joined body.
  • Cu—Ti bonded bodies were prepared for the circuit layer and the metal layer, respectively.
  • one surface of the ceramic substrate described in Table 3 (40 mm ⁇ 40 mm, thickness 0.635 mm for AlN and Al 2 O 3 , thickness 0.32 mm for Si 3 N 4 ) and the other surface Cu-6.3 mass% P-9.3 mass% Sn-7.0 mass% Ni brazing material foil (melting point 600 ° C.) and Cu—Ti joined body were laminated in this order on the surface.
  • heat processing 2 it heated on condition of 650 degreeC for 60 minutes, the Cu board was joined to one side and the other side of a ceramic substrate, the circuit layer and the metal layer were formed, and the board
  • the size of the Cu plate for the circuit layer and the metal layer was the same as described above.
  • the 90 ° peel strength between the circuit layer and the ceramic substrate was evaluated under the following conditions.
  • the portion of the circuit layer that protrudes from the ceramic substrate is bent 90 °, the circuit layer is pulled in a direction perpendicular to the ceramic substrate, and the circuit layer is peeled off from the ceramic substrate.
  • the maximum tensile load was measured.
  • a value obtained by dividing the load by the joining length was defined as 90 ° peel strength, and is shown in Table 3.
  • the joining length in this example was the length of the long side of the circuit layer at the part where the circuit layer and the ceramic substrate were joined.
  • the power module substrate, the manufacturing method of the joined body, and the manufacturing method of the power module substrate, the ceramic member and the Cu member are satisfactorily bonded, and the thermal resistance in the stacking direction is reduced. It can be lowered.

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Abstract

Le corps lié de l'invention consiste en un corps lié d'un élément céramique constitué d'une céramique, et d'un élément Cu constitué d'un Cu ou d'un alliage de Cu. À l'interface de liaison entre l'élément céramique et l'élément Cu, sont formées : une couche Cu-Sn qui est positionnée côté élément céramique, et dans laquelle un Sn est dissous dans un Cu ; une première couche de composé intermétallique qui est positionnée côté élément Cu, et qui comprend un Cu et un Ti ; et une seconde couche de composé intermétallique qui est positionnée entre la première couche de composé intermétallique et la couche Cu-Sn, et qui comprend un P et un Ti.
PCT/JP2017/001840 2016-01-22 2017-01-20 Corps lié ainsi que procédé de fabrication de celui-ci, et substrat pour module de puissance ainsi que procédé de fabrication de celui-ci WO2017126641A1 (fr)

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EP17741518.9A EP3407380B1 (fr) 2016-01-22 2017-01-20 Corps lié ainsi que procédé de fabrication de celui-ci, et substrat pour module de puissance ainsi que procédé de fabrication de celui-ci
CN201780015160.5A CN109075135B (zh) 2016-01-22 2017-01-20 接合体、功率模块用基板、接合体的制造方法及功率模块用基板的制造方法
US16/070,332 US11062974B2 (en) 2016-01-22 2017-01-20 Bonded body, power module substrate, method for manufacturing bonded body, and method for manufacturing power module substrate
KR1020187023493A KR102419486B1 (ko) 2016-01-22 2017-01-20 접합체, 파워 모듈용 기판, 접합체의 제조 방법 및 파워 모듈용 기판의 제조 방법

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2020196616A1 (fr) * 2019-03-25 2020-10-01

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014183118A (ja) * 2013-03-18 2014-09-29 Mitsubishi Materials Corp 接合体の製造方法及びパワーモジュール用基板の製造方法
JP2015043392A (ja) * 2013-08-26 2015-03-05 三菱マテリアル株式会社 接合体及びパワーモジュール用基板
JP2015062953A (ja) * 2013-08-26 2015-04-09 三菱マテリアル株式会社 接合体及びパワーモジュール用基板

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4394477B2 (ja) * 2003-03-27 2010-01-06 Ｄｏｗａホールディングス株式会社 金属−セラミックス接合基板の製造方法
US8613807B2 (en) * 2009-02-06 2013-12-24 Kabushiki Kaisha Toyota Chuo Kenkyusho Conductive film, corrosion-resistant conduction film, corrosion-resistant conduction material and process for producing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014183118A (ja) * 2013-03-18 2014-09-29 Mitsubishi Materials Corp 接合体の製造方法及びパワーモジュール用基板の製造方法
JP2015043392A (ja) * 2013-08-26 2015-03-05 三菱マテリアル株式会社 接合体及びパワーモジュール用基板
JP2015062953A (ja) * 2013-08-26 2015-04-09 三菱マテリアル株式会社 接合体及びパワーモジュール用基板

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2020196616A1 (fr) * 2019-03-25 2020-10-01
WO2020196616A1 (fr) * 2019-03-25 2020-10-01 京セラ株式会社 Carte de circuit imprimé, dispositif électronique, et module électronique
JP7171894B2 (ja) 2019-03-25 2022-11-15 京セラ株式会社 配線基板、電子装置及び電子モジュール

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