WO2017121006A1 - Tft结构及其修复方法、goa电路 - Google Patents

Tft结构及其修复方法、goa电路 Download PDF

Info

Publication number
WO2017121006A1
WO2017121006A1 PCT/CN2016/074499 CN2016074499W WO2017121006A1 WO 2017121006 A1 WO2017121006 A1 WO 2017121006A1 CN 2016074499 W CN2016074499 W CN 2016074499W WO 2017121006 A1 WO2017121006 A1 WO 2017121006A1
Authority
WO
WIPO (PCT)
Prior art keywords
source
shaped
drain
branches
independent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2016/074499
Other languages
English (en)
French (fr)
Inventor
阙祥灯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US15/025,893 priority Critical patent/US20180040508A1/en
Publication of WO2017121006A1 publication Critical patent/WO2017121006A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3674—Details of drivers for scan electrodes
    • G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/041—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being discontinuous
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136268—Switch defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements
    • G02F2201/506—Repairing, e.g. with redundant arrangement against defective part
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements
    • G02F2201/506—Repairing, e.g. with redundant arrangement against defective part
    • G02F2201/508—Pseudo repairing, e.g. a defective part is brought into a condition in which it does not disturb the functioning of the device

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a TFT structure, a repair method thereof, and a GOA circuit.
  • LCD Liquid crystal display
  • PDAs personal digital assistants
  • digital cameras computer screens or laptop screens, etc.
  • liquid crystal displays which include a liquid crystal display panel and a backlight module.
  • the working principle of the liquid crystal display panel is to fill liquid crystal molecules between a Thin Film Transistor Array Substrate (TFT Array Substrate) and a Color Filter (CF), and apply driving on the two substrates.
  • TFT Array Substrate Thin Film Transistor Array Substrate
  • CF Color Filter
  • AMLCD Active Matrix Liquid Crystal Display
  • AMLCD Active Matrix Liquid Crystal Display
  • TFT Thin Film Transistor
  • the gate of the TFT Connected to a scan line extending in a horizontal direction, a drain connected to a data line extending in a vertical direction, and a source connected to a corresponding pixel electrode. If a sufficient positive voltage is applied to a certain scanning line in the horizontal direction, all the TFTs connected to the scanning line are turned on, and the data signal voltage loaded on the data line is written into the pixel electrode to control different liquid crystals. The transparency then achieves the effect of controlling color.
  • TFT Thin Film Transistor
  • the driving of the horizontal scanning line of the active matrix liquid crystal display is initially completed by an external integrated circuit (IC), and the external IC can control the stepwise charging and discharging of the horizontal scanning lines of each level.
  • GOA technology Gate Driver on Array
  • the driving circuit of the horizontal scanning line can be fabricated on the substrate around the display area by using an array process of the liquid crystal display panel, so that it can replace the external IC to complete the horizontal scanning line.
  • Drive GOA technology can reduce the bonding process of external ICs, have the opportunity to increase production capacity and reduce product cost, and can make LCD panels more suitable for making narrow-frame display products.
  • the GOA circuit is composed of a plurality of TFTs.
  • 1 shows a TFT structure in a conventional GOA circuit, including a comb-type source formed by interconnecting a plurality of U-shaped source branches 11, and
  • the U-shaped source branches 11 have a drain formed by an equal number of strip-shaped drain branches 12, and the strip-shaped drain branches 12 are disposed corresponding to the openings of a U-type source branch 11.
  • the U-shaped source branch 11 includes a lateral portion 111 and two vertical portions 112 perpendicularly connected to the lateral portion 111.
  • the lateral portions 111 of the plurality of U-shaped source branches 11 are integrally connected, and two adjacent Us are connected.
  • the source-source branches 11 share a vertical portion 112; the plurality of strip-shaped drain branches 12 are connected to the same metal line, and the plurality of U-shaped source branches 11 are each connected to another metal line through the same connection portion 113.
  • the entire TFT is electrically disabled and cannot be repaired, thereby resulting in the use of the TFT structure.
  • the GOA circuit has a logic error and even caused the entire panel to be scrapped.
  • Another object of the present invention is to provide a TFT repairing method capable of effectively repairing defects of a TFT and improving the success rate of repair.
  • the present invention provides a TFT structure including: a source, a drain disposed opposite to the source, and the source and drain disposed under or above the source and the drain Insulating gates;
  • the source includes a plurality of independent U-shaped source branches arranged at intervals in a first direction, and the drain includes a plurality of strip-shaped drain branches arranged at intervals in the first direction;
  • Each of the independent U-shaped source branches is individually connected to the first metal line through a connection portion; and the plurality of strip-shaped drain branches are electrically connected to the second metal line.
  • Each of the individual U-shaped source branches includes a lateral portion extending in the first direction and two longitudinal portions vertically connected to both ends of the lateral portion.
  • connection is led by a lateral portion of the corresponding independent U-shaped source branch and extends to the first metal line to achieve a separate connection of each individual U-shaped source branch to the first metal line.
  • the strip drain branches are parallel to the longitudinal portions of the separate U-shaped source branches.
  • the TFT structure further includes an active layer disposed under the source and the drain.
  • the invention also provides a TFT repairing method, comprising the following steps:
  • Step 1 providing a TFT, comprising: a source, a drain disposed opposite to the source, and a gate insulated from the source and the drain disposed under or above the source and the drain;
  • the source includes a plurality of independent U-shaped source branches spaced along the first direction, the drain
  • the pole includes a plurality of strip-shaped drain branches spaced along the first direction;
  • Each of the independent U-shaped source branches is individually connected to the first metal line through a connection portion; the plurality of strip-shaped drain branches are electrically connected to the second metal line;
  • Step 2 detecting whether each of the independent U-shaped source branches and the corresponding strip-shaped drain branches of the TFT have defects, and finding a separate U-shaped source branch with a defect and a corresponding strip-shaped drain branch thereof;
  • Step 3 Cut the connection between the independent U-shaped source branch having the defect and the first metal line, and cut off the connection between the corresponding strip-shaped drain branch and the second metal line.
  • Each of the independent U-shaped source branches includes a lateral portion extending in the first direction and two longitudinal portions perpendicularly connected to both ends of the lateral portion;
  • the strip drain branches are parallel to the longitudinal portions of the separate U-shaped source branches.
  • Each connecting portion is led out by a lateral portion of the corresponding independent U-shaped source branch and extends to the first metal line to realize a separate connection of each of the independent U-shaped source branches and the first metal line;
  • the step 3 cuts off the connection between the defective U-shaped source branch and the first metal line by cutting off the corresponding connection portion.
  • An active layer is further disposed under the source and the drain.
  • the present invention also provides a GOA circuit comprising the above TFT structure.
  • a TFT structure and a repair method thereof wherein a source is formed by a plurality of independent U-shaped source branches arranged in a first direction, and a drain is spaced apart by a plurality of first directions.
  • a source is formed by a plurality of independent U-shaped source branches arranged in a first direction, and a drain is spaced apart by a plurality of first directions.
  • each of the independent U-shaped source branches is individually connected to the first metal line through a connection portion, and the plurality of strip-shaped drain branches are electrically connected to the second metal line, each The independent U-shaped source branch and its corresponding strip-shaped drain branch form a plurality of independent source-drain conduction channels, and the independent source-drain conduction channels do not affect each other when an independent U is detected.
  • the connection between the independent U-shaped source branch having the defect and the first metal line can be cut, and the corresponding strip-shaped drain branch and the second can be cut off.
  • the method of connecting the metal lines is repaired, that is, the source-drain conduction path with the defect is broken, and the other source-drain conduction path continues to work normally, thereby effectively repairing the defects of the TFT and improving the repair success rate.
  • the GOA circuit provided by the invention has the above TFT structure, can improve the fabrication yield of the GOA circuit, and reduce the production cost of the GOA circuit.
  • 1 is a schematic view showing a structure of a TFT in a conventional GOA circuit
  • FIG. 2 is a schematic view showing the structure of a TFT of the present invention.
  • FIG. 3 is a flow chart of a method for repairing a TFT according to the present invention.
  • step 3 of the TFT repairing method of the present invention is a schematic diagram of step 3 of the TFT repairing method of the present invention.
  • the present invention firstly provides a TFT structure, including: a source 10, a drain 20 disposed opposite the source 10, and a lower or upper surface of the source 10 and the drain 20 and the A gate (not shown) in which the source 10 and the drain 20 are insulated from each other.
  • the source 10 includes a plurality of independent U-shaped source branches 101 spaced apart in a first direction
  • the drain 20 includes a plurality of strip-shaped drain branches 201 spaced apart in a first direction.
  • the strip-shaped drain branch 201 is correspondingly disposed in the opening of an independent U-shaped source branch 101.
  • Each of the individual U-shaped source branches 101 is connected to the first metal line 30 through a connection portion 103; the plurality of strip-shaped drain branches 201 are electrically connected to the second metal line 40.
  • each of the individual U-shaped source branches 101 includes a lateral portion 1011 extending in a first direction and two longitudinal portions 1012 vertically connected to both ends of the lateral portion 1011.
  • the strip drain branch 201 is parallel to the vertical portion 1012 of the separate U-shaped source branch 101.
  • Each of the connecting portions 103 is led out by the lateral portion 1011 of the corresponding independent U-shaped source branch 101 and extends to the first metal line 30 to achieve a separate connection of each of the individual U-shaped source branches 101 to the first metal line 30.
  • the first metal wire 30 and the second metal wire 40 are parallel to each other, the first direction is a horizontal direction, the horizontal portion 1011 extends horizontally, and the vertical portion 1012 extends vertically, the first And the second metal lines 30, 40 extend horizontally, and the strip-shaped drain branches 201 extend vertically.
  • the TFT structure of the present invention further includes an active layer (not shown) disposed under the source 10 and the drain 20.
  • the TFT structure is a bottom gate type or a top gate type: when the TFT structure is a bottom gate type, the gate is located under the source 10 and the drain 20; when the TFT structure is a top gate type, the gate is Located above source 10 and drain 20.
  • the material of the source 10, the drain 20, and the gate is made of copper, aluminum, molybdenum, or titanium.
  • the material of the source 10, the drain 20, and the gate is made of copper, aluminum, molybdenum, or titanium.
  • the active layer is N-doped or P-doped.
  • the gate is for receiving a switching signal, and controls turning on or off of all of the independent U-shaped source branches 101 and the corresponding strip-shaped drain branches 201.
  • each of the independent U-shaped source branches 101 and the corresponding strip-shaped drain branches 201 constitute a plurality of independent source-drain conduction channels, and the disconnection of any one of the source-drain conduction channels does not affect other The source-drain conduction channel, so when a certain U-shaped source branch 101 and its corresponding strip-shaped drain branch 201 have defects (such as a short circuit), the independent U-shaped source branch 101 with the defect can be cut off
  • the method of connecting between the first metal lines 30 and cutting off the connection between the corresponding strip-shaped drain branches 201 and the second metal lines 40 is repaired, that is, the source-drain conduction channels having defects are broken, and other sources are
  • the drain conduction path continues to operate normally, and therefore, the TFT structure of the present invention is easy to repair.
  • the present invention further provides a TFT repairing method, including the following steps:
  • Step 1 A TFT as shown in FIG. 2 is provided. The TFT structure will not be repeatedly described herein.
  • Step 2 detecting whether each of the independent U-shaped source branches 101 and their corresponding strip-shaped drain branches 201 in the TFT has a defect, and finding the U-shaped source branch 101 and its corresponding strip-shaped drain branch 201 having defects .
  • Step 3 as shown in FIG. 4, the connection between the independent U-shaped source branch 101 having the defect and the first metal line 30 is cut, and the corresponding strip-shaped drain branch 201 and the second metal line 40 are cut off. connection.
  • connection between the defective U-shaped source branch 101 and the first metal line 30 is cut by cutting the corresponding connecting portion 103.
  • the drain 20 is composed of a plurality of strip-shaped drain branches arranged in the first direction.
  • each of the independent U-shaped source branches 101 is separately connected to the first metal line 30 through a connecting portion 103, and the plurality of strip-shaped drain branches 201 are electrically connected to the second metal line 40, each independent
  • the U-shaped source branch 101 and the corresponding strip-shaped drain branch 201 form a plurality of independent source-drain conduction channels, and the independent source-drain conduction channels do not affect each other when detecting an independent
  • the connection between the independent U-shaped source branch 101 having the defect and the first metal line 30 can be cut, and the corresponding strip-shaped drain can be cut off.
  • the method of connecting the pole branch 201 and the second metal line 40 is repaired, that is, the source-drain conduction path with the defect is broken, and the other source-drain conduction channel continues to operate normally, thereby effectively repairing the defect of the TFT , improve the success rate of repair.
  • the present invention also provides a GOA circuit, including the TFT structure shown in FIG. 2, which can improve the fabrication yield of the GOA circuit and reduce the GOA circuit compared to the TFT structure that cannot be repaired by the existing GOA circuit. Production costs.
  • the TFT structure and the repairing method of the present invention are characterized in that the source is composed of a plurality of independent U-shaped source branches arranged at intervals in the first direction, and the drain is composed of a plurality of strips arranged at intervals in the first direction.
  • each of the independent U-shaped source branches is separately connected to the first metal line through a connection portion, and the plurality of strip-shaped drain branches are electrically connected to the second metal line, and each of the independent U-shaped sources
  • the pole branch and its corresponding strip-shaped drain branch form a plurality of independent source-drain conduction channels, and the independent source-drain conduction channels do not affect each other when detecting an independent U-shaped source branch
  • the connection between the independent strip-shaped drain branch and the second metal line can be cut off by cutting the connection between the independent U-shaped source branch having the defect and the first metal line
  • the connection method is repaired, that is, the source-drain conduction channel with the defect is broken, and the other source-drain conduction channel continues to work normally, thereby effectively repairing the defect of the TFT and improving the success rate of the repair.
  • the GOA circuit of the present invention has the above TFT structure, which can improve the fabrication yield of the GOA circuit and reduce the production cost of

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种TFT结构及其修复方法、GOA电路。TFT结构及其修复方法设置的源极(10)由多个独立U形源极分支(101)构成，漏极(20)由多个条状漏极分支(201)构成，每一独立U形源极分支(101)各通过一连接部(103)单独连接至第一金属线(30)，多个条状漏极分支(201)均电性连接至第二金属线(40)，各个独立U形源极分支(101)及与其对应的条状漏极分支(201)构成多个独立的源漏极导通通道；当检测出某个独立U形源极分支(101)及其对应的条状漏极分支(201)存在缺陷时，可通过断路存在缺陷的独立U形源极分支(101)、断路对应的条状漏极分支(201)的方法进行修复，其它源漏极导通通道则继续正常工作。

Description

TFT结构及其修复方法、GOA电路 技术领域
本发明涉及显示技术领域，尤其涉及一种TFT结构及其修复方法、GOA电路。
背景技术
液晶显示器(Liquid Crystal Display，LCD)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。如：液晶电视、移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕等，在平板显示领域中占主导地位。
现有市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)与彩色滤光片基板(Color Filter，CF)之间灌入液晶分子，并在两片基板上施加驱动电压来控制液晶分子的旋转方向，以将背光模组的光线折射出来产生画面。
主动矩阵式液晶显示器(Active Matrix Liquid Crystal Display，AMLCD)是目前最常用的液晶显示器，包含多个像素，每个像素各受一个薄膜晶体管(Thin Film Transistor，TFT)的控制，该TFT的栅极连接至沿水平方向延伸的扫描线，漏极连接至沿垂直方向延伸的数据线，源极连接至对应的像素电极。如果在水平方向的某一扫描线上施加足够的正电压，则会使得连接在该条扫描线上的所有TFT打开，将数据线上所加载的数据信号电压写入像素电极中，控制不同液晶的透光度进而达到控制色彩的效果。
主动矩阵式液晶显示器水平扫描线的驱动(即栅极驱动)最初由外接的集成电路(Integrated Circuit，IC)来完成，外接的IC可以控制各级水平扫描线的逐级充电和放电。GOA技术(Gate Driver on Array)即阵列基板行驱动技术，可以运用液晶显示面板的阵列制程将水平扫描线的驱动电路制作在显示区周围的基板上，使之能替代外接IC来完成水平扫描线的驱动。GOA技术能减少外接IC的焊接(bonding)工序，有机会提升产能并降低产品成本，而且可以使液晶显示面板更适合制作窄边框的显示产品。
GOA电路由多个TFT构成。图1所示为现有的一种GOA电路中的TFT结构，包括由多个U形源极分支11相互连接构成的梳型的源极、及由与多 个U形源极分支11相等数量的条状漏极分支12构成的漏极，一条状漏极分支12对应一U型源极分支11的开口设置。所述U形源极分支11包括横部111、及两垂直连接于横部111的纵部112，所述多个U形源极分支11的横部111连成一体，相邻的两个U形源极分支11共用一纵部112；多个条状漏极分支12连接同一金属线，所述多个U形源极分支11均通过同一连接部113连接至另一金属线。图1所示的TFT结构，当其中一U形源极分支11及其对应的条状漏极分支12出现缺陷时，将导致整个TFT电性失效且无法进行修复，从而导致采用该TFT结构的GOA电路出现逻辑错误，甚至造成整个面板报废。
发明内容
本发明的目的在于提供一种TFT结构，易于修复。
本发明的另一目的在于提供一种TFT修复方法，能够有效修复TFT的缺陷，提高修复成功率。
本发明的目的还在于提供一种GOA电路，能够提升GOA电路的制作良率，降低GOA电路的生产成本。
为实现上述目的，本发明提供了一种TFT结构，包括：源极、与所述源极相对设置的漏极、以及设于源极和漏极下方或上方的与所述源极和漏极相互绝缘的栅极；
所述源极包括多个沿第一方向间隔排列的独立U形源极分支，所述漏极包括多个沿第一方向间隔排列的条状漏极分支；
一条状漏极分支对应设于一独立U形源极分支的开口内；
每一独立U形源极分支各通过一连接部单独连接至第一金属线；所述多个条状漏极分支均电性连接至第二金属线。
每一独立U形源极分支均包括沿第一方向延伸的横部、及垂直连接于所述横部的两端的两纵部。
每一连接部由对应的独立U形源极分支的横部引出，并延伸至第一金属线，实现每一独立U形源极分支与第一金属线的单独连接。
所述条状漏极分支平行于所述独立U形源极分支的纵部。
所述的TFT结构还包括设于所述源极和漏极下方的有源层。
本发明还提供一种TFT修复方法，包括如下步骤：
步骤1、提供一TFT，包括：源极、与所述源极相对设置的漏极、以及设于源极和漏极下方或上方的与所述源极和漏极相互绝缘的栅极；
所述源极包括多个沿第一方向间隔排列的独立U形源极分支，所述漏 极包括多个沿第一方向间隔排列的条状漏极分支；
一条状漏极分支对应设于一独立U形源极分支的开口内；
每一独立U形源极分支各通过一连接部单独连接至第一金属线；所述多个条状漏极分支均电性连接至第二金属线；
步骤2、检测所述TFT中各个独立U形源极分支及其对应的条状漏极分支是否存在缺陷，找到存在缺陷的独立U形源极分支及其对应的条状漏极分支；
步骤3、切断存在缺陷的独立U形源极分支与第一金属线之间的连接，切断对应的条状漏极分支与第二金属线之间的连接。
每一独立U形源极分支均包括沿第一方向延伸的横部、及垂直连接于所述横部的两端的两纵部；
所述条状漏极分支平行于所述独立U形源极分支的纵部。
每一连接部由对应的独立U形源极分支的横部引出，并延伸至第一金属线，实现每一独立U形源极分支与第一金属线的单独连接；
所述步骤3通过切断相应的连接部来切断存在缺陷的U形源极分支与第一金属线之间的连接。
所述源极和漏极的下方还设有有源层。
本发明还提供一种GOA电路，包括上述TFT结构。
本发明的有益效果：本发明提供的一种TFT结构及其修复方法，设置源极由多个沿第一方向间隔排列的独立U形源极分支构成，漏极由多个沿第一方向间隔排列的条状漏极分支构成，每一独立U形源极分支各通过一连接部单独连接至第一金属线，所述多个条状漏极分支均电性连接至第二金属线，各个独立U形源极分支及与其对应的条状漏极分支构成多个独立的源漏极导通通道，且各个独立的源漏极导通通道之间互不影响，当检测出某个独立U形源极分支及其对应的条状漏极分支存在缺陷时，可通过切断存在缺陷的独立U形源极分支与第一金属线之间的连接、切断对应的条状漏极分支与第二金属线之间的连接的方法进行修复，即断路存在缺陷的源漏极导通通道，而由其它源漏极导通通道继续正常工作，从而能够有效修复TFT的缺陷，提高修复成功率。本发明提供的一种GOA电路，具有上述TFT结构，能够提升GOA电路的制作良率，降低GOA电路的生产成本。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本 发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为现有的一种GOA电路中的TFT结构的示意图；
图2为本发明的TFT结构的示意图；
图3为本发明的TFT修复方法的流程图；
图4为本发明的TFT修复方法的步骤3的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明首先提供一种TFT结构，包括：源极10、与所述源极10相对设置的漏极20、以及设于源极10和漏极20下方或上方的与所述源极10和漏极20相互绝缘的栅极(未图示)。
所述源极10包括多个沿第一方向间隔排列的独立U形源极分支101，所述漏极20包括多个沿第一方向间隔排列的条状漏极分支201。一条状漏极分支201对应设于一独立U形源极分支101的开口内。
每一独立U形源极分支101各通过一连接部103连接至第一金属线30；所述多个条状漏极分支201均电性连接至第二金属线40。
具体地，每一独立U形源极分支101均包括沿第一方向延伸的横部1011、及垂直连接于所述横部1011的两端的两纵部1012。所述条状漏极分支201平行于所述独立U形源极分支101的纵部1012。
每一连接部103由对应的独立U形源极分支101的横部1011引出，并延伸至第一金属线30，实现每一独立U形源极分支101与第一金属线30的单独连接。
优选的，所述第一金属线30与第二金属线40相互平行间隔，所述第一方向为水平方向，所述横部1011水平延伸，所述纵部1012竖直延伸，所述第一和第二金属线30、40水平延伸，所述条状漏极分支201竖直延伸。
本发明的TFT结构还包括设于所述源极10和漏极20下方的有源层(未图示)。
可选的，所述TFT结构为底栅型或顶栅型：当TFT结构为底栅型，则栅极位于源极10和漏极20的下方；当TFT结构为顶栅型，则栅极位于源极10和漏极20的上方。
可选的，所述源极10、漏极20、及栅极的材料为铜、铝、钼、钛中的 一种或多种的堆栈组合。
可选的，所述有源层经过N型掺杂或经过P型掺杂。
在上述TFT结构中，所述栅极用于接收开关信号，控制所有的独立U形源极分支101及对应条状漏极分支201的导通或截止。值得注意的是，各个独立U形源极分支101及与其对应的条状漏极分支201构成多个独立的源漏极导通通道，且任意一个源漏极导通通道的断路不会影响其它源漏极导通通道，因此当某个独立U形源极分支101及其对应的条状漏极分支201存在缺陷(如短路)时，可通过切断存在缺陷的独立U形源极分支101与第一金属线30之间的连接、切断对应的条状漏极分支201与第二金属线40之间的连接的方法进行修复，即断路存在缺陷的源漏极导通通道，而由其它源漏极导通通道继续正常工作，因此，本发明的TFT结构易于修复。
请参阅图3，并结合图2、图4，本发明还提供一种TFT修复方法，包括如下步骤：
步骤1、提供一上述如图2所示的TFT，此处不再对TFT结构进行重复描述。
步骤2、检测所述TFT中各个独立U形源极分支101及其对应的条状漏极分支201是否存在缺陷，找到存在缺陷的U形源极分支101及其对应的条状漏极分支201。
步骤3、如图4所示，切断存在缺陷的独立U形源极分支101与第一金属线30之间的连接，切断其对应的条状漏极分支201与第二金属线40之间的连接。
具体的，通过切断相应的连接部103来切断存在缺陷的U形源极分支101与第一金属线30之间的连接。
本发明的TFT修复方法，由于TFT设置源极10由多个沿第一方向间隔排列的独立U形源极分支101构成，漏极20由多个沿第一方向间隔排列的条状漏极分支201构成，每一独立U形源极分支101各通过一连接部103单独连接至第一金属线30，所述多个条状漏极分支201均电性连接至第二金属线40，各个独立U形源极分支101及与其对应的条状漏极分支201构成多个独立的源漏极导通通道，且各个独立的源漏极导通通道之间互不影响，当检测出某个独立U形源极分支101及其对应的条状漏极分支201存在缺陷时，能够通过切断存在缺陷的独立U形源极分支101与第一金属线30之间的连接、切断对应的条状漏极分支201与第二金属线40之间的连接的方法进行修复，即断路存在缺陷的源漏极导通通道，而由其它源漏极导通通道继续正常工作，从而能够有效修复TFT的缺陷，提高修复成功率。
本发明还提供一种GOA电路，包括上述如图2所示的TFT结构，相比于现有的GOA电路所采用的不能进行修复的TFT结构，能够提升GOA电路的制作良率，降低GOA电路的生产成本。
综上所述，本发明的TFT结构及其修复方法，设置源极由多个沿第一方向间隔排列的独立U形源极分支构成，漏极由多个沿第一方向间隔排列的条状漏极分支构成，每一独立U形源极分支各通过一连接部单独连接至第一金属线，所述多个条状漏极分支均电性连接至第二金属线，各个独立U形源极分支及与其对应的条状漏极分支构成多个独立的源漏极导通通道，且各个独立的源漏极导通通道之间互不影响，当检测出某个独立U形源极分支及其对应的条状漏极分支存在缺陷时，可通过切断存在缺陷的独立U形源极分支与第一金属线之间的连接、切断对应的条状漏极分支与第二金属线之间的连接的方法进行修复，即断路存在缺陷的源漏极导通通道，而由其它源漏极导通通道继续正常工作，从而能够有效修复TFT的缺陷，提高修复成功率。本发明的GOA电路，具有上述TFT结构，能够提升GOA电路的制作良率，降低GOA电路的生产成本。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (14)

  1. 一种TFT结构，包括：源极、与所述源极相对设置的漏极、以及设于源极和漏极下方或上方的与所述源极和漏极相互绝缘的栅极；
    所述源极包括多个沿第一方向间隔排列的独立U形源极分支，所述漏极包括多个沿第一方向间隔排列的条状漏极分支；
    一条状漏极分支对应设于一独立U形源极分支的开口内；
    每一独立U形源极分支各通过一连接部单独连接至第一金属线；所述多个条状漏极分支均电性连接至第二金属线。
  2. 如权利要求1所述的TFT结构，其中，每一独立U形源极分支均包括沿第一方向延伸的横部、及垂直连接于所述横部的两端的两纵部。
  3. 如权利要求2所述的TFT结构，其中，每一连接部由对应的独立U形源极分支的横部引出，并延伸至第一金属线，实现每一独立U形源极分支与第一金属线的单独连接。
  4. 如权利要求2所述的TFT结构，其中，所述条状漏极分支平行于所述独立U形源极分支的纵部。
  5. 如权利要求1所述的TFT结构，还包括设于所述源极和漏极下方的有源层。
  6. 一种TFT修复方法，包括如下步骤：
    步骤1、提供一TFT，包括：源极、与所述源极相对设置的漏极、以及设于源极和漏极下方或上方的与所述源极和漏极相互绝缘的栅极；
    所述源极包括多个沿第一方向间隔排列的独立U形源极分支，所述漏极包括多个沿第一方向间隔排列的条状漏极分支；
    一条状漏极分支对应设于一独立U形源极分支的开口内；
    每一独立U形源极分支各通过一连接部单独连接至第一金属线；所述多个条状漏极分支均电性连接至第二金属线；
    步骤2、检测所述TFT中各个独立U形源极分支及其对应的条状漏极分支是否存在缺陷，找到存在缺陷的独立U形源极分支及其对应的条状漏极分支；
    步骤3、切断存在缺陷的独立U形源极分支与第一金属线之间的连接，切断对应的条状漏极分支与第二金属线之间的连接。
  7. 如权利要求6所述的TFT修复方法，其中，每一独立U形源极分支均包括沿第一方向延伸的横部、及垂直连接于所述横部的两端的两纵部；
    所述条状漏极分支平行于所述独立U形源极分支的纵部。
  8. 如权利要求7所述的TFT修复方法，其中，每一连接部由对应的独立U形源极分支的横部引出，并延伸至第一金属线，实现每一独立U形源极分支与第一金属线的单独连接；
    所述步骤3通过切断相应的连接部来切断存在缺陷的U形源极分支与第一金属线之间的连接。
  9. 如权利要求6所述的TFT修复方法，其中，所述源极和漏极的下方还设有有源层。
  10. 一种GOA电路，包括一种TFT结构；所述TFT结构包括：源极、与所述源极相对设置的漏极、以及设于源极和漏极下方或上方的与所述源极和漏极相互绝缘的栅极；
    所述源极包括多个沿第一方向间隔排列的独立U形源极分支，所述漏极包括多个沿第一方向间隔排列的条状漏极分支；
    一条状漏极分支对应设于一独立U形源极分支的开口内；
    每一独立U形源极分支各通过一连接部单独连接至第一金属线；所述多个条状漏极分支均电性连接至第二金属线。
  11. 如权利要求10所述的GOA电路，其中，每一独立U形源极分支均包括沿第一方向延伸的横部、及垂直连接于所述横部的两端的两纵部。
  12. 如权利要求11所述的GOA电路，其中，每一连接部由对应的独立U形源极分支的横部引出，并延伸至第一金属线，实现每一独立U形源极分支与第一金属线的单独连接。
  13. 如权利要求11所述的GOA电路，其中，所述条状漏极分支平行于所述独立U形源极分支的纵部。
  14. 如权利要求10所述的GOA电路，还包括设于所述源极和漏极下方的有源层。
PCT/CN2016/074499 2016-01-12 2016-02-25 Tft结构及其修复方法、goa电路 Ceased WO2017121006A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/025,893 US20180040508A1 (en) 2016-01-12 2016-02-25 Tft structure and repair method thereof, goa circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610018659.9 2016-01-12
CN201610018659.9A CN105632439A (zh) 2016-01-12 2016-01-12 Tft结构及其修复方法、goa电路

Publications (1)

Publication Number Publication Date
WO2017121006A1 true WO2017121006A1 (zh) 2017-07-20

Family

ID=56047293

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/074499 Ceased WO2017121006A1 (zh) 2016-01-12 2016-02-25 Tft结构及其修复方法、goa电路

Country Status (3)

Country Link
US (1) US20180040508A1 (zh)
CN (1) CN105632439A (zh)
WO (1) WO2017121006A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109473450B (zh) * 2018-11-14 2021-07-30 惠科股份有限公司 薄膜晶体管阵列及其修复方法、移位寄存器
TWI702458B (zh) 2019-05-28 2020-08-21 元太科技工業股份有限公司 主動陣列基板及其製作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2086011A2 (en) * 2008-02-04 2009-08-05 Samsung Electronics Co., Ltd. Thin film transistor and display device having the same
US20100084659A1 (en) * 2007-12-26 2010-04-08 Au Optronics Corporation Gate driver-on-array structure and display panel

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3645184B2 (ja) * 2000-05-31 2005-05-11 シャープ株式会社 液晶表示装置及びその欠陥修正方法
JP2007298791A (ja) * 2006-05-01 2007-11-15 Mitsubishi Electric Corp 液晶表示装置及びその欠陥修復方法
CN101833910B (zh) * 2009-03-11 2012-11-28 上海天马微电子有限公司 显示装置及其阵列基板的测试方法
TWI414032B (zh) * 2009-06-15 2013-11-01 Au Optronics Corp 驅動電路結構
CN104091830A (zh) * 2014-06-20 2014-10-08 京东方科技集团股份有限公司 一种薄膜晶体管及其修复方法、goa电路及显示装置
CN104752442B (zh) * 2015-03-26 2017-08-11 京东方科技集团股份有限公司 一种阵列基板

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100084659A1 (en) * 2007-12-26 2010-04-08 Au Optronics Corporation Gate driver-on-array structure and display panel
EP2086011A2 (en) * 2008-02-04 2009-08-05 Samsung Electronics Co., Ltd. Thin film transistor and display device having the same

Also Published As

Publication number Publication date
CN105632439A (zh) 2016-06-01
US20180040508A1 (en) 2018-02-08

Similar Documents

Publication Publication Date Title
US9627283B2 (en) Display device
US9568791B2 (en) Liquid crystal display device
US8330886B2 (en) Thin film transistor array substrate and repair method thereof
US10852608B1 (en) Display panel and manufacturing method thereof
WO2018107612A1 (zh) 显示基板及其测试方法
US9746731B2 (en) Array substrate, repairing sheet, display panel and method of repairing array substrate
US9147699B2 (en) Display device with redundant transistor structure
CN101946327A (zh) Tft、移位寄存器、扫描信号线驱动电路、开关电路和显示装置
CN104966501B (zh) 用于窄边框lcd的goa电路结构
US20140111099A1 (en) Array substrate, lcd device and driving method
CN102741913A (zh) 显示装置
CN105425484A (zh) 阵列基板结构及阵列基板断线修复方法
CN104656327A (zh) 一种阵列基板及液晶显示面板
US7427777B2 (en) Thin film transistor, pixel structure and repairing method thereof
US9523891B2 (en) Display panel and manufacture method thereof
CN1259591C (zh) 液晶显示板及其制造方法
US20160349585A1 (en) Thin film transistor array substrate and liquid crystal display panel
KR20120076221A (ko) 산화물 반도체를 포함한 박막 트랜지스터 기판
WO2017121006A1 (zh) Tft结构及其修复方法、goa电路
CN108594553A (zh) 一种阵列基板、其修复方法及显示装置
CN108388057B (zh) 阵列基板
KR102052741B1 (ko) 액정 디스플레이 장치
US9799680B2 (en) TFT array substrate, display panel, and TFT structure
KR101302621B1 (ko) 액정표시장치 및 그 리페어 방법
US9235093B2 (en) Display apparatus

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 15025893

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16884568

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16884568

Country of ref document: EP

Kind code of ref document: A1