WO2017113299A1 - Cellule solaire à hétérojonction à contact arrière et son procédé de préparation - Google Patents

Cellule solaire à hétérojonction à contact arrière et son procédé de préparation Download PDF

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WO2017113299A1
WO2017113299A1 PCT/CN2015/100133 CN2015100133W WO2017113299A1 WO 2017113299 A1 WO2017113299 A1 WO 2017113299A1 CN 2015100133 W CN2015100133 W CN 2015100133W WO 2017113299 A1 WO2017113299 A1 WO 2017113299A1
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amorphous silicon
film layer
type amorphous
silicon film
deposition source
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PCT/CN2015/100133
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English (en)
Chinese (zh)
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薛黎明
杨武保
陆钧
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中海阳能源集团股份有限公司
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Priority to PCT/CN2015/100133 priority Critical patent/WO2017113299A1/fr
Priority to CN201580085420.7A priority patent/CN108521832A/zh
Publication of WO2017113299A1 publication Critical patent/WO2017113299A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention belongs to the field of new energy, and particularly relates to a back electrode heterojunction solar cell and a preparation method thereof.
  • Crystal silicon battery is the current mainstream product.
  • a variety of new solar cells based on crystalline silicon cells have been developed.
  • heterojunction cells and back electrode cells are among the most efficient and most photovoltaic.
  • the positive and negative electrodes are located on the front and back sides of the crystalline silicon substrate, that is, the front gate line and the back gate line need to be prepared.
  • the process is relatively simple, the process accuracy is high, otherwise the product yield is good. It will be greatly reduced; when using a conventional amorphous silicon solar cell process to prepare a heterojunction cell, precise and strict masking means and cleaning control are required; the gate line processing in the heterojunction cell requires the use of professional low-temperature silver paste. It has become the main factor restricting the development of heterojunction cells; finally, the use of front gate lines inevitably reduces photovoltaic efficiency.
  • the simple back electrode battery can be used to prepare the back electrode with the positive and negative electrodes on the back side of the crystalline silicon substrate by diffusion, the manufacturing process is particularly complicated, and the process precision is particularly high, which makes the development of the electrode severely constrained; On the other hand, there are serious pollution discharge problems in the process, and there are few companies that can produce back electrode batteries.
  • the present invention aims to provide a high-efficiency solar cell in which a back electrode heterojunction is integrated and a preparation method thereof.
  • the present invention provides a back electrode heterojunction solar cell comprising: a crystalline silicon substrate, a heterojunction portion and a back electrode portion, the front surface of the crystalline silicon substrate is formed with a light trapping layer, and the light trapping layer An anti-reflection film is deposited on the back of the crystalline silicon substrate, and the heterojunction portion includes an intrinsic amorphous silicon film layer, a P-type amorphous silicon film layer and an N-type amorphous silicon film layer.
  • the amorphous silicon film layer is deposited on the back surface of the crystalline silicon substrate, and the P-type amorphous silicon film layer and the N-type amorphous silicon film layer are deposited on the intrinsic amorphous silicon film layer, and the P-type amorphous silicon film layer and the N A conductive film is deposited on the amorphous silicon film layer, and a back electrode portion is deposited on the conductive film.
  • a back electrode heterojunction solar cell wherein the crystalline silicon substrate is a P-type crystalline silicon substrate, an N-type crystalline silicon substrate or an intrinsic crystalline silicon substrate.
  • the P-type amorphous silicon film layer comprises a P-type amorphous silicon film line and a P-type amorphous silicon collector film line
  • the N-type amorphous silicon film layer comprises N Type amorphous silicon film line and N type amorphous silicon collector film line, P type amorphous silicon collector film line and N type amorphous silicon collector film line respectively and P type amorphous silicon film line and N type amorphous The silicon film line is vertically connected.
  • the P-type amorphous silicon film line or the N-type amorphous silicon film line is pre-designed on the intrinsic amorphous silicon film layer by using a point deposition source or a linear deposition source.
  • the geometric deposition scans form the same film line pattern.
  • the film line pattern comprises a linear type or a curved type
  • the film line pattern is unequal in width
  • the P-type amorphous silicon collector film line and the N-type amorphous silicon collector film line are respectively distributed on both sides of the intrinsic amorphous silicon film layer on the crystalline silicon substrate
  • a first electrode lead region and a second electrode lead region are formed on the conductive film on the P-type amorphous silicon film layer and the N-type amorphous silicon film layer, respectively.
  • a back electrode heterojunction solar cell wherein the back electrode portion comprises a positive electrode lead and a negative electrode lead, wherein the positive electrode lead is located at the first electrode lead region and the negative electrode lead is located at the second electrode lead region, or The electrode lead is located in the second electrode lead region and the negative electrode lead is located in the first electrode lead region.
  • the invention provides a preparation method of a back electrode heterojunction solar cell, comprising the following steps:
  • Step one performing a texturing process on the front side of the crystalline silicon substrate by using an etching technique to prepare a light trapping layer;
  • Step 2 depositing an antireflection film on the light trap layer by PVD, CVD or surface oxidation treatment;
  • Step 3 on the back side of the crystalline silicon substrate, first depositing an intrinsic amorphous silicon film layer by PECVD;
  • Step 4 depositing a P-type amorphous silicon film layer and the N-type amorphous silicon film layer respectively on the intrinsic amorphous silicon film layer by using a point deposition source or a linear deposition source according to a pre-designed geometric pattern, wherein a P-type amorphous silicon film layer and an N-type amorphous silicon film layer are deposited on the intrinsic amorphous silicon film layer, such that the intrinsic amorphous silicon film layer, the P-type amorphous silicon film layer, and the N-type amorphous silicon The film layer forms a heterojunction portion;
  • Step 5 depositing a conductive film on the P-type amorphous silicon film layer and the N-type amorphous silicon film layer respectively by using a point deposition source or a linear deposition source;
  • Step 6 depositing a back electrode portion on the conductive film of the P-type amorphous silicon film layer and the N-type amorphous silicon film layer.
  • the spot deposition source is deposited on the surface of the intrinsic amorphous silicon film layer, the P-type amorphous silicon film layer or the N-type amorphous silicon film layer A desired film line pattern with linear features.
  • the spot deposition source is formed by using an electron beam, an ion beam, a laser beam or a micro heat source, and then the reaction material is evaporated by a linear scanning method.
  • the linear deposition source realizes a desired single linear thin film pattern by a fixed crystalline silicon substrate under a fixed condition, and the linear deposition source passes the moving crystal under a fixed condition.
  • the silicon substrate achieves the desired multi-linear film pattern.
  • the linear deposition source is formed by using an electron beam, an ion beam, a plasma beam or a fine heat source, and then, the reaction is performed while the linear deposition source is fixed.
  • the process conditions for forming a point deposition source film layer and a linear deposition source to form a linear deposition source film layer include a point deposition source or a linear deposition source.
  • the working pressure range is 0.1Pa-10kPa
  • the output energy density ranges from 1mW/cm 2 -1W/mm 2
  • the particle energy range is 100k-10 4 k
  • the particle composition is required for film deposition including Si, N, a matching particle of B, H and Ar, the distance between the point deposition source and the crystalline silicon substrate is not more than 1 m;
  • the working gas comprises hydrogen, silane and argon, and the flow ratio of hydrogen, silane and argon is: 100: (1-20): (0-100), the working pressure of the working gas is 0.1 Pa-10 kPa.
  • the working gas includes hydrogen gas. , silane, argon and doping gas, the doping gas comprises borane and / or phosphine, wherein the flow ratio of hydrogen, silane and argon is: 100: (1-20): (0-100), doped
  • the flow ratio of the heterogas to the silane is (0.1-10):100, and the working pressure of the working gas is 0.1 Pa-10 kPa.
  • the invention discloses a back electrode heterojunction solar cell and a preparation method thereof, and the back electrode heterojunction is integrated to have a back electrode with positive and negative electrodes on the back side of the crystalline silicon substrate, and has a heterojunction.
  • the preparation of the back electrode is realized by the method of coating and printing, so that on the one hand, the process of manufacturing the heterojunction cell is simple, the disadvantage of the conventional heterojunction cell having the front gate line is overcome; on the other hand, the back electrode is maintained.
  • the battery has no advantage of the front gate line, and overcomes the disadvantages of the complicated manufacturing process of the conventional back electrode battery.
  • FIG. 1 is a cross-sectional view of a back electrode heterojunction solar cell disclosed in the present invention
  • FIG. 2 is a schematic view showing a film line pattern of a P-type amorphous silicon film line and an N-type amorphous silicon film line on an intrinsic amorphous silicon film layer of a back electrode heterojunction solar cell according to the present invention
  • FIG. 3 is a schematic diagram of a film line pattern of a P-type amorphous silicon film line and an N-type amorphous silicon film line on another intrinsic amorphous silicon film layer of a back electrode heterojunction solar cell according to the present invention
  • FIG. 4 is a schematic diagram of a film line pattern of a P-type amorphous silicon film line and an N-type amorphous silicon film line on another intrinsic amorphous silicon film layer of a back electrode heterojunction solar cell according to the present invention.
  • FIG. 1 is a cross-sectional view of a back electrode heterojunction solar cell disclosed in the present invention.
  • the present invention provides a back electrode heterojunction solar cell including: crystalline silicon. a substrate 01, a heterojunction portion 02 and a back electrode portion (not shown), a front surface of the crystalline silicon substrate 01 is formed with a light trapping layer 03, and an antireflection film 04 is deposited on the light trapping layer 03, a heterojunction
  • the portion 02 is located on the back of the crystalline silicon substrate 01, and the heterojunction portion 02 includes an intrinsic amorphous silicon film layer 05, a P-type amorphous silicon film layer 06, and an N-type amorphous silicon film layer 07, an intrinsic amorphous silicon film.
  • the layer 05 is deposited on the back surface of the crystalline silicon substrate 01, and the P-type amorphous silicon film layer 06 and the N-type amorphous silicon film layer 07 are intermittently deposited on the intrinsic amorphous silicon film layer 05, and the P-type amorphous silicon film layer 06
  • a conductive film 08 is deposited on the N-type amorphous silicon film layer 07, and a back electrode portion is deposited on the conductive film 08.
  • the invention further discloses a back electrode heterojunction solar cell, wherein the crystalline silicon substrate 01 is a P-type crystalline silicon substrate, an N-type crystalline silicon substrate or an intrinsic crystalline silicon substrate, when the crystalline silicon substrate
  • the heterojunction portion 02 may not include the intrinsic amorphous silicon film layer 05, that is, the P-type amorphous silicon film layer 06 and the N-type amorphous silicon film layer 07 may be directly
  • the spacer is deposited on an intrinsic crystalline silicon substrate.
  • FIG. 2, 3 and 4 are respectively a P-type amorphous silicon film line and an N-type amorphous silicon film line on three intrinsic amorphous silicon film layers of a back electrode heterojunction solar cell disclosed in the present invention.
  • the P-type amorphous silicon film layer 06 comprises a P-type amorphous silicon film line 09 and P
  • the amorphous silicon collector film line 10 and the N-type amorphous silicon film layer 07 include an N-type amorphous silicon film line 11 and an N-type amorphous silicon collector film line 12, and a P-type amorphous silicon collector film line 10
  • the N-type amorphous silicon collector film line 12 is vertically connected to the P-type amorphous silicon film line 09 and the N-type amorphous silicon film line 11, respectively.
  • the P-type amorphous silicon film line 09 or the N-type amorphous silicon film line 11 utilizes a point deposition source Or a linear deposition source is formed on the intrinsic amorphous silicon film layer 05 by a pre-designed geometric pattern to form the same film line pattern.
  • the film line pattern includes a straight line or a curved line, and the width of the film line pattern may be equal.
  • the linear film line pattern widths may not be equal, for example, may be triangles, and the linear film line pattern widths may not be equal, for example, as shown in FIG.
  • the film line pattern when the width of the film line pattern is not equal, the closer the film line pattern is to the collector film line, the larger the width, such a design is advantageous for obtaining maximum photovoltaic efficiency.
  • the intrinsic amorphous silicon The first electrode lead region and the second electrode lead region (not shown) are formed on both sides of the film layer 05 on the conductive film 08 on the P-type amorphous silicon film layer 06 and the N-type amorphous silicon film layer 07, respectively. .
  • a back electrode heterojunction solar cell wherein the back electrode portion comprises a positive electrode lead and a negative electrode lead, wherein the positive electrode lead is located at the first electrode lead region and the negative electrode lead is located at the second electrode lead region, or The electrode lead is located in the second electrode lead region and the negative electrode lead is located in the first electrode lead region (not shown).
  • the invention provides a preparation method of a back electrode heterojunction solar cell, comprising the following steps:
  • Step 1 the surface of the crystalline silicon substrate 01 is subjected to a texturing process using an etching technique to prepare a light trapping layer 03;
  • Step 2 depositing an anti-reflection film 04 on the light trap layer 03 by PVD, CVD or surface oxidation treatment;
  • Step 3 on the back side of the crystalline silicon substrate 01, first depositing an intrinsic amorphous silicon film layer 05 by PECVD;
  • Step 4 depositing a P-type amorphous silicon film layer 06 and the N-type amorphous silicon film layer on the intrinsic amorphous silicon film layer 05 by using a point deposition source or a linear deposition source according to a pre-designed geometry. 07, wherein a P-type amorphous silicon film layer 06 and an N-type amorphous silicon film layer 07 are intermittently deposited on the intrinsic amorphous silicon film layer 05, such that the intrinsic amorphous silicon film layer 05, the P-type amorphous silicon film Layer 06 and N-type amorphous silicon film layer 07 form a heterojunction portion 05;
  • Step 5 depositing a conductive film 08 on the P-type amorphous silicon film layer 06 and the N-type amorphous silicon film layer 07 by using a point deposition source or a linear deposition source;
  • Step 6 depositing a back electrode portion on the conductive film 08 of the P-type amorphous silicon film layer 06 and the N-type amorphous silicon film layer 07.
  • the spot deposition source is deposited on the surface of the intrinsic amorphous silicon film layer 05, the P-type amorphous silicon film layer 06 or the N-type amorphous silicon film layer 07 A desired film line pattern with linear features.
  • the spot deposition source is formed by using an electron beam, an ion beam, a laser beam or a fine heat source, and then the reaction gas generated by evaporating the reaction material by linear scanning is used.
  • the reaction gas is directly ionized and the film material is deposited to a corresponding position to form a dot-like deposition source film layer having a width ranging from micrometer to millimeter.
  • the linear deposition source realizes the desired single linear film pattern by fixing the crystalline silicon substrate 01 under fixed conditions, and linear The deposition source achieves the desired multi-linear film pattern by moving the crystalline silicon substrate 01 under fixed conditions.
  • the linear deposition source is formed by using an electron beam, an ion beam, a plasma beam or a micro heat source, and then, after the linear deposition source is fixed, the reaction material is evaporated.
  • the process conditions for forming a point deposition source film layer and a linear deposition source to form a linear deposition source film layer include a working pressure of a point deposition source or a linear deposition source. , the output energy density, the ion energy, the ion composition, and the distance between the point deposition source and the crystalline silicon substrate 01;
  • the working pressure range is 0.1Pa-10kPa
  • the output energy density ranges from 1mW/cm 2 -1W/mm 2
  • the particle energy range is 100k-10 4 k
  • the particle composition is required for film deposition including Si, N, a matching particle of B, H and Ar
  • the distance between the spot deposition source and the crystalline silicon substrate 01 is not more than 1 m;
  • the working gas in the process of depositing the intrinsic amorphous silicon film layer 05, includes hydrogen, silane and argon, hydrogen, silane and argon.
  • the gas flow ratio is: 100: (1-20): (0-100), and the working gas has a working pressure of 0.1 Pa-10 kPa.
  • the working gas includes hydrogen gas, Silane, argon and doping gas
  • the doping gas comprises borane and/or phosphine, wherein the flow ratio of hydrogen, silane and argon is: 100: (1-20): (0-100), doping
  • the flow ratio of gas to silane is (0.1-10):100, and the working pressure of the working gas is 0.1 Pa-10 kPa.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • the N-type crystalline silicon substrate is subjected to a velvet treatment to obtain a light-trapping layer, and on the surface of the velvet-treated surface, an anti-reflection film is deposited by a vacuum coating technique.
  • the antireflection film may be MgF 2 , SiO 2 or SiC.
  • the intrinsic amorphous silicon film layer is deposited by PECVD on the back surface of the crystalline silicon substrate.
  • a P-type amorphous silicon film line was obtained by linear scanning deposition using an electron gun with a focused spot of 1000 ⁇ m on the surface on which the intrinsic amorphous silicon film layer was deposited.
  • the pitch between the P-type amorphous silicon film lines was 1060 ⁇ m, and the line head of the P-type amorphous silicon film line was 3.2 mm from the edge of the crystalline silicon substrate.
  • a P-type amorphous silicon collector film line thicker than the P-type amorphous silicon film is deposited.
  • the P-type amorphous silicon collector film line is in communication with the front P-type amorphous silicon film line to form a P-type amorphous silicon film layer.
  • the N-type amorphous silicon film line is deposited by the same method, wherein the distance between the N-type amorphous silicon film line and the P-type amorphous silicon film line is 30 micrometers, and the N-type amorphous silicon collector film line is located relative to the P-type
  • the other side of the crystalline silicon substrate of the amorphous silicon collector film line is in communication with all of the N-type amorphous silicon film lines to form a linear N-type amorphous silicon film layer.
  • the electron beam source is also used to deposit the conductive film because the previous N-type amorphous silicon collector film line is located relative to the P-type amorphous silicon collector electrode.
  • the first electrode lead region and the second electrode lead region are respectively formed on the conductive film of the P-type amorphous silicon collector film line and the N-type amorphous silicon collector film line.
  • a positive electrode lead and a negative electrode lead are respectively deposited in the above two electrode lead regions to form a back electrode portion, and thus the back electrode heterojunction solar cell of the present invention is obtained.
  • the material of the conductive film may be Ag.
  • the conductive film may be directly used as a positive electrode lead and a negative electrode lead of the back electrode portion, and when the conductive film is present, the internal resistance of the battery may be reduced, which is advantageous for improvement. Photovoltaic performance.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Photovoltaic Devices (AREA)

Abstract

La présente invention porte sur une cellule solaire à hétérojonction à contact arrière et son procédé de préparation. La cellule solaire à hétérojonction à contact arrière comprend : un substrat de silicium cristallin (01), une partie d'hétérojonction (02) et une partie de contact arrière. Une couche de piégeage de lumière (03) est formée sur le côté avant du substrat de silicium cristallin. Un film antireflet (04) est déposé sur la couche de piégeage de lumière. La partie d'hétérojonction est disposée sur l'arrière du substrat de silicium cristallin, et comprend une couche de film de silicium amorphe intrinsèque (05), une couche de film de silicium amorphe de type P (06) et une couche de film de silicium amorphe de type N (07). Un film conducteur (08) est déposé sur la couche de film de silicium amorphe de type P et la couche de film de silicium amorphe de type N. La partie de contact arrière est déposée sur le film conducteur. Un contact arrière et une hétérojonction sont intégrées. D'une part, l'avantage selon lequel un procédé de fabrication d'une cellule à hétérojonction est relativement simple est atteint, et l'inconvénient selon lequel une cellule à hétérojonction classique présente une ligne de grille avant est surmonté ; et d'autre part, l'avantage selon lequel une cellule à contact arrière ne possède pas une ligne de grille avant est maintenu, et l'inconvénient selon lequel un procédé de fabrication d'une cellule à contact arrière classique est complexe est résolu.
PCT/CN2015/100133 2015-12-31 2015-12-31 Cellule solaire à hétérojonction à contact arrière et son procédé de préparation WO2017113299A1 (fr)

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PCT/CN2015/100133 WO2017113299A1 (fr) 2015-12-31 2015-12-31 Cellule solaire à hétérojonction à contact arrière et son procédé de préparation
CN201580085420.7A CN108521832A (zh) 2015-12-31 2015-12-31 一种背电极异质结太阳能电池及其制备方法

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