WO2017111546A1 - Structure nanocomposite de métamatériau à indice de réfraction élevé à bande large - Google Patents

Structure nanocomposite de métamatériau à indice de réfraction élevé à bande large Download PDF

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WO2017111546A1
WO2017111546A1 PCT/KR2016/015205 KR2016015205W WO2017111546A1 WO 2017111546 A1 WO2017111546 A1 WO 2017111546A1 KR 2016015205 W KR2016015205 W KR 2016015205W WO 2017111546 A1 WO2017111546 A1 WO 2017111546A1
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metamaterial
nanoparticles
refractive index
nano composite
composite structure
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Korean (ko)
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신종화
심현자
이헌
정경재
김리향
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한국과학기술원
고려대학교 산학협력단
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B1/005—Constitution or structural means for improving the physical properties of a device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
    • G02B2207/101—Nanooptics

Definitions

  • the present application relates to a high refractive index metamaterial nanocomposite structure having broadband characteristics and an optical film including the metamaterial nanocomposite structure.
  • the development of the semiconductor industry is based on improving the precision of micro processes in semiconductor processes.
  • the main core technology of semiconductor microprocessing depends on how finely the pattern of etching resist can be controlled during photolithography process, and the resolution of the optical system is needed to finely etch the pattern.
  • Today's best photolithography device is an excimer laser that can produce devices with a minimum wiring width of 14 nm using light at wavelengths of 248 nm and 193 nm.
  • other alternatives are needed.
  • the oil immersion technology uses transparent oils with specific optical and viscosity properties between the objective lens and the sample in the optical microscope. As the oil properties improve, the wiring width can be reduced by several nanometers. It is expected.
  • highly purified water is used in place of oil in semiconductor processes.
  • various techniques such as double exposure and resist development conditions are applied to reduce the line width even further, and thus, a line width smaller than the size determined by the simple relationship is obtained. Therefore, a smaller line width can be obtained by fundamentally reducing the resolution shown in the above relation.
  • the resolution of the fine pattern size is inversely proportional to the refractive index of the oil between the objective lens and the sample, and the high resolution requires immersion oil of high refractive index.
  • the development of high refractive index oil which is an optical characteristic of the oil, which must be improved, is currently delayed due to the absence of high refractive index oil and difficulty in making it.
  • metamaterials made of sub-wavelength (sub-wavelength) capacitor (capacitor) arrays have been proposed to have high permittivity at broadband, they also have problems due to the strong diamagnetic effect of suppressing the magnetic permeability value. Only recently have broadband theoretical high refractive index metamaterials been proposed to reduce this diamagnetic effect. However, the proposed structure also has not been the target of easy implementation due to its three-dimensional features.
  • Korean Patent Laid-Open No. 2012-0007819 relates to a meta material and a method for manufacturing the same, and discloses a meta material including a nano pattern structure having a negative refractive index in a natural state and a method for manufacturing the same.
  • the meta-material nano having a high refractive index while exhibiting broadband characteristics in the visible, ultraviolet and / or infrared wavelength band It is intended to provide an optical film including a composite structure and the metamaterial nano composite structure.
  • a first aspect of the present disclosure provides a unit structure comprising nanoparticles and a host material, wherein the unit structure is arranged in three dimensions, provides a metamaterial nano composite structure.
  • the second aspect of the present application provides an optical film comprising the metamaterial nanocomposite structure according to the first aspect of the present application.
  • a high refractive index metamaterial nano composite structure exhibiting broadband characteristics may be provided.
  • the unit structure of the metamaterial nanocomposite structure according to the embodiment of the present invention is formed to a size smaller than the wavelength (about 1/10 or less of the wavelength in the vacuum) and the unit structures are densely arranged in three dimensions. packed, so that the whole structure can produce optical effects as if it were a single material with a high refractive index.
  • the size of the nanoparticles corresponding to or smaller than the skin depth of the nanoparticles induces magnetic penetration into the nanoparticle part, thereby providing an effective permeability of the nanoparticles.
  • the dielectric constant may be freely adjusted through a simple structure without noticeable change in permeability by changing the width of the gap (gap) with the adjacent nanoparticles while maintaining the size of the unit structure to a constant value.
  • a high permittivity and a high refractive index can be achieved, and the adjustment of the permittivity and permeability is important for designing the impedance and other optical properties of the material, so that for lithography and imaging It can be applied in a variety of optical devices, from submerged lenses, waveguide couplers, modulators, light detectors and energy devices.
  • the metamaterial nanocomposite structure has the effect of overcoming the bandwidth limitations of other metamaterials directly dependent on surface plasmon resonance.
  • the metamaterial nanocomposites have the same effect on other nanoparticle morphologies and lattice types, thus providing the potential for multiple bottom-up nanoparticle synthesis instead of expensive and complex top-down nanofabrication processes. Can be.
  • FIG. 1 is a schematic diagram (a) of a cubic metamaterial nanocomposite structure densely arranged in three dimensions, and a schematic diagram (b) showing metal particle size conditions for achieving high refractive index.
  • FDTD finite difference time domain method
  • 3 is, in one embodiment of the present application, material data used for FDTD simulation.
  • 5 (a) and 5 (b) show FDTD simulation results showing an effective dielectric constant, an effective permeability, and an effective refractive index of a gold metamaterial nanocomposite structure having a host material of Si02 in an example of the present application.
  • 6 (a) to 6 (f) show an asymptotic value of a fully electric conductor and a gold metamaterial nanocomposite structure in which a gap width is changed under a constant unit structure size in one embodiment of the present application [(a) and ( d)], FDTD simulation results showing permeability [(b) and (e)] and refractive index [(c) and (f)].
  • FIG. 7 (a) to 7 (d) are schematic diagrams ((a) and (b)] showing cubic nanoparticles in a cubic lattice and spherical nanoparticles in a hexagonal lattice in one embodiment of the present application, and a multilayer FDTD simulation results [(c) and (d)].
  • FIG. 8 is an image illustrating a manufacturing process of a hole pattern by block copolymer lithography in an embodiment of the present disclosure.
  • FIG. 9 is an image illustrating an ion milling process of the aluminum metamaterial nanocomposite structure in one embodiment of the present application.
  • 10 (a) to 10 (d) are SEM images of the aluminum metamaterial nanocomposite structure in one embodiment of the present application.
  • 11A and 11B are AFM images of an aluminum metamaterial nanocomposite structure in one embodiment of the present application.
  • UV-VIS spectrometer spectrum showing the measured transmittance of the aluminum metamaterial nanocomposite structure in one embodiment of the present application.
  • FIG. 13 is an FDTD simulation graph showing a calculated transmittance of an aluminum metamaterial nanocomposite structure in one embodiment of the present application.
  • FIG. 14 is an FDTD simulation graph showing the derived effective refractive index of the metamaterial nanocomposite structure in one embodiment of the present application.
  • the term "combination (s) thereof" included in the expression of a makushi form refers to one or more mixtures or combinations selected from the group consisting of components described in the expression of makushi form, It means to include one or more selected from the group consisting of the above components.
  • metal is a material made of an array of meta atoms designed with a metal or dielectric material made to a size much smaller than the wavelength of light, which is difficult for natural materials to have. It means the artificially designed and made to have optical properties.
  • the term "close-packed” refers to a state in which nanoparticles or unit structures are densely arranged in three dimensions with a certain unit size and gap width in the host material.
  • the densely arranged nanoparticles and the densely arranged unit structures according to the present invention exhibit broadband properties from visible light to ultraviolet and / or infrared wavelength bands and at the same time have a high refractive index.
  • the unit structure size and the width of the gap of the nanoparticles and unit structures may be several nanometers or less, but may not be limited thereto.
  • the term “skin depth” refers to the depth indicating how far electromagnetic waves can penetrate into the surface of the medium.
  • the current density tends to be close to the surface of the medium and decreases as it penetrates into the conductor.
  • the current flows mainly at the "surface” of the conductor, which is between the outer surface and the level called the skin depth, so that the penetration depth is more specifically 1 / e (such as current density or electric field at the surface). 37%).
  • the term “refractive index” refers to the rate of velocity of waves traveling in two media as light travels from one media to another.
  • the refractive index varies with wavelength, and at the interface of the media with different refractive indices, the light bends according to Snell's law and some reflects according to the angle of incidence.
  • the refractive index can be expressed as the square root of the product of relative permittivity and relative permeability for Equation 1, and as the refractive index value increases, the resolution, which is the ability to distinguish two objects from each other in an optical device, is increased. Because it improves, the resolution increases:
  • a first aspect of the present application provides a metamaterial nanocomposite structure comprising unit structures comprising nanoparticles and a host material, wherein the unit structures are arranged in three dimensions.
  • the unit structure may be close-packed in three dimensions.
  • the metamaterial nano composite structure may have a high refractive index in a wavelength band selected from visible light, ultraviolet light, infrared light, and combinations thereof, but may not be limited thereto.
  • the metamaterial nanocomposite structure may exhibit a high refractive index by controlling the size of the nanoparticles of the metamaterial nanocomposite structure and / or the width of the gap, which is a gap with adjacent nanoparticles, but is not limited thereto. Can be.
  • the high refractive index metamaterial which has been proposed for the terahertz frequency in the related art, has a disadvantage in that it is difficult to apply directly at the visible wavelength due to the difficulty of nanofabrication due to a complicated structure.
  • the high refractive index meta-material nanocomposite structure according to one embodiment of the present application is selected by appropriately selecting the width of the gap that is the gap between the nanoparticle size and the adjacent nanoparticles in the unit structure, a simple structure without lowering the effective permeability This can lead to an improvement in the effective dielectric constant and refractive index.
  • the unit structure may be one that is isotropic (isotropy) or anisotropic (anisotropy) are densely arranged in three dimensions.
  • the metamaterial nano composite structure may have a maximum refractive index of about 1.5 or more at a wavelength of about 200 nm or less, but may not be limited thereto.
  • the metamaterial nano composite structure may have a maximum refractive index of about 2 or more at an ultraviolet wavelength of about 200 nm to about 400 nm, but may not be limited thereto.
  • the metamaterial nano composite structure may have a maximum refractive index of about 4 or more at a visible light wavelength of about 400 nm to about 700 nm, but may not be limited thereto.
  • the metamaterial nano composite structure may have a maximum refractive index of about 5 or more at an infrared wavelength of about 700 nm or more, but may not be limited thereto.
  • Figure 1 (a) is an image showing an example of a three-dimensionally arranged cubic metamaterial nano composite structure contained in a dielectric host material for achieving a high refractive index according to an embodiment of the present application.
  • the blue and gray areas represent the dielectric and metal, respectively.
  • the arrow represents the electric field and the field intensity is weakened by the electrons of the metal.
  • the length of the arrow indicates the strength of the magnetic field and the propagation strength becomes weak when the magnetic field penetrates into the metal.
  • the size of the nanoparticles in the unit structure may correspond to or smaller than the penetration depth of the nanoparticles, but may not be limited thereto.
  • the penetration depth may be different depending on the type of the nanoparticles, but may not be limited thereto.
  • the penetration depth is not only in the metal but also in the heavily doped semiconductor, or in a material where the real part of the dielectric constant is negative, so that the magnetic field does not enter well and decreases exponentially with distance from the surface.
  • the penetration depth is a depth indicating how far the electromagnetic wave can penetrate from the surface of the medium, and the intensity of the electromagnetic wave decreases by 1 / e when the penetration depth penetrates.
  • the magnetic field is distributed almost uniformly across the unit structure, which prevents the reduction of the effective permeability of the metamaterial nanocomposite structure, resulting in a high refractive index.
  • Metamaterial nanocomposites can be created.
  • the size of the nanoparticles corresponding to or smaller than the depth of penetration can lead to high refractive indices according to the formula of Equation 2:
  • n eff is an effective refractive index
  • ⁇ eff is an effective permittivity
  • ⁇ eff is an effective permeability
  • a is the size of a unit structure (unit cell)
  • g is a width of a gap, which is an interval between adjacent nanoparticles.
  • Metamaterial nanocomposites have a high effective dielectric constant that is nearly constant over a wide range of wavelengths due to the capacitive effect determined by geometry.
  • the DC or low-frequency permittivity of a less known (meta) material is the same as the capacitance of a parallel plate capacitor with a test material that fills the entire space between the plates, but with a known permittivity.
  • C, Q, and V are capacitance, total charge, and total voltage drop, respectively, while ⁇ cap , A, and d are Respectively, the dielectric constant, area and distance of the dielectric material between the plates), and the capacitance is directly proportional to ⁇ cap .
  • the ratio of the capacitance is the ratio of the dielectric constant of the test material and the reference material.
  • the longitudinal electric field due to the charge is present only in the gap region between the metal particles and excluded from the inside of the particles. This is because the longitudinal electric field, typically a unit of sub-angstrom, cannot penetrate into the metal beyond the Thomas-Fermi screening length. This fact is shown in Fig. 1B.
  • the strength of the electric field in the dielectric gap region of the metamaterial nanocomposite is equal to the strength of the electric field in the reference case where the space between the capacitor plates is filled with the same material (permittivity, ⁇ h) as the gap dielectric.
  • the total voltage drop in the presence of the metamaterial nanocomposite is reduced to g / a of the voltage drop in the reference case, which means that the capacitance is improved by a / g.
  • ⁇ eff of the metamaterial nanocomposite structure is also improved by a / g, meaning a / g ⁇ h .
  • the meta-material nanocomposites require 'close-packed' arrays for high refractive index due to the a / g factor.
  • the nanoparticles in the unit structure may be coated or surrounded by the host material (wraaping), but may not be limited thereto.
  • the unit structure may be a core-shell structure in which spherical nanoparticles are surrounded by a host material and then arranged in another host material, but may not be limited thereto.
  • the unit structure may be formed by arranging cylindrical nanoparticles such as carbon nanotubes in a host material, but may not be limited thereto.
  • the arrangement of the nanoparticles may be a core-shell structure or a close-pack, but may not be limited thereto.
  • the material of the nanoparticles is gold (Au), silver (Ag), aluminum (Al), copper (Cu), nickel (Ni), platinum (Pt), titanium (Ti), tin (Sn), and a metal core selected from the group consisting of combinations thereof may be in a form surrounded by a nonmetallic shell, but may not be limited thereto.
  • the nanoparticles when the nanoparticles are semiconductors, although the nanoparticles are larger in size, they may exhibit a high refractive index, but may not be limited thereto. Since the semiconductor nanoparticles have a longer penetration depth than the metal nanoparticles, the magnetic field can penetrate deeper. Therefore, even if the nanoparticles have a larger size than the metal nanoparticles, they may exhibit a high refractive index. Can be.
  • the nanoparticles in the unit structure may include a material in which the real part of the dielectric constant is negative, and the host material may include a material in which the real part of the dielectric constant is positive, but is not limited thereto.
  • the nanoparticles are metals such as gold (Au), silver (Ag), aluminum (Al), copper (Cu), nickel (Ni), platinum (Pt), titanium (Ti), tin (Sn), and the like.
  • Carbon-based materials such as graphite, carbon nanotubes, and fullerenes
  • the host material may be silicon dioxide (SiO 2 ), copper oxide (CuO 2 ), aluminum oxide (Al 2 O 3 ), vanadium oxide, titanium oxide, silver oxide Oxides such as these; Nitrides such as silicon nitride (Si 3 N 4 ), sialon and the like; Silicon, germanium, cadmium telluride (CdTe), lead sulfide (PbS), indium arsenide (InAs), indium phosphide (InP), indium antimonide (InSb), gallium phosphide (GaP), gallium nitride (GaN), non Semiconductor materials such as gallium hydride (GaAs); Compound semiconductor materials of three or more kinds of elements such as InGaAsP; Polymeric materials; Carbon-based materials such as graphite; Organic materials such as polydopamine, oleylamine; Or liquid materials such as water, oils, organic solvents, and the like, but may not be limited thereto
  • the host material when the host material is a liquid material such as water, oil, the host material is used after applying on the sample using a spin coating method, spray coating method, immersion method, or a drop method It may be, but may not be limited thereto.
  • aluminum (Al) is a highly reactive metal as the nanoparticles, it is possible to improve the refractive index of the metamaterial nano composite structure, but may not be limited thereto.
  • the nanoparticles in the unit structure is tetrahedral, hexahedral, octahedral, octahedral, tetrahedral, icosahedron, rod, concave tetrahedron, tetrahedral It may include, but not limited to, twin, spherical, ellipsoidal, cylindrical, such as hexagonal plate, triangular plate, circular pentagonal twin.
  • the nanoparticles may have an isotropic sphere, tetrahedron, cube, octahedron, dodecahedron, dodecahedral, or dodecahedron. It may not be limited.
  • the nanoparticles formed in the unit structure may have a width of a gap, which is a gap with adjacent nanoparticles, of about 10 nm or less, but may not be limited thereto.
  • the width of the gap which is the distance between the nanoparticles and adjacent nanoparticles, may be about 10 nm or less, about 9 nm or less, about 8 nm or less, about 7 nm or less, about 6 nm or less, or about 5 nm or less. It may be, but may not be limited thereto.
  • the dielectric constant of the nanoparticles can be freely adjusted without noticeable change in permeability, by changing the width of the gap while maintaining the size of the unit structure at a constant value under the depth of penetration, but is not limited thereto. Can be. While the permeability is nearly constant for the nanoparticles, the permittivity is inversely proportional to the width of the gap, thereby reducing the gap width to achieve high permittivity and high refractive index.
  • the material in which the real part of the dielectric constant of the nanoparticles is negative is a material selected from the group consisting of metal material, carbon-based material, semiconductor material having improved carrier density by doping, and combinations thereof It may be to include, but may not be limited thereto.
  • the nanoparticles are metals such as gold (Au), silver (Ag), aluminum (Al), copper (Cu), nickel (Ni), platinum (Pt), titanium (Ti), tin (Sn), and the like.
  • Carbon-based materials such as graphite, carbon nanotubes, and fullerenes
  • the material of which the real part of the dielectric constant of the host material is positive is selected from the group consisting of oxides, nitrides, low-density semiconductor materials, high-molecular materials, organic materials, liquid materials, and combinations thereof It may be to include the material, but may not be limited thereto.
  • the host material may be silicon dioxide (SiO 2 ), copper oxide (CuO 2 ), aluminum oxide (Al 2 O 3 ), vanadium oxide, titanium oxide, silver oxide Oxides such as these; Nitrides such as silicon nitride (Si 3 N 4 ), sialon and the like; Silicon, germanium, cadmium telluride (CdTe), lead sulfide (PbS), indium arsenide (InAs), indium phosphide (InP), indium antimonide (InSb), gallium phosphide (GaP), gallium nitride (GaN), arsenide Semiconductor materials such as gallium (GaAs); Compound semiconductor materials of three or more kinds of elements such as InGaAsP; Polymeric materials; Carbon-based materials such as graphite, carbon nanotubes, and fullerenes; Organic materials such as polydopamine, oleylamine; Or liquid materials such as water, oils, organic solvents
  • the host material when the host material is a liquid material such as water, oil, the host material is used after applying on the sample using a spin coating method, spray coating method, immersion method, or a drop method It may be, but may not be limited thereto.
  • the second aspect of the present application provides an optical film comprising the metamaterial nanocomposite structure according to the first aspect.
  • the metamaterial nano composite structure includes unit structures including nanoparticles and a host material, and the unit structures may be close-packed in three dimensions. This may not be limited.
  • the optical film may be to improve the resolution of an optical system such as optical lithography or an optical microscope using a high refractive index, but may not be limited thereto.
  • the optical film may be formed using a deposition method, a spray method, a immersion method, a drop method, etc., but may not be limited thereto.
  • the description of the first aspect of the present application may be equally applied even if the description is omitted in the second aspect of the present application. have.
  • a three-dimensionally arranged array of metal nanoparticles has been proposed to achieve broadband high refractive index in the visible and infrared regions.
  • small gap-to-period ratios lead to improved effective permittivity from strongly sealed electric fields within the dielectric gap.
  • the nanometer diameter of tens of metal particles prevents the undesired drop in effective permeability, since the size of the nanoparticles corresponding to or smaller than the penetration depth allows the penetration of the magnetic field through the metal particles. This difference in electrical and magnetic field behavior is due to the large difference between Thomas-Fermi screening length and penetration depth.
  • the effective refractive index of the metamaterial nanocomposite is much higher than natural materials in the visible and infrared regions and can be easily controlled by varying the gap width.
  • the proposed metamaterial nanocomposite overcomes the bandwidth limitations of other metamaterials directly dependent on surface plasmon resonance.
  • Another advantage of metamaterial nanocomposites is the weak dependence of the effective refractive index on the particle morphology and lattice type, which allows the possibility for many bottom-up particle synthesis methods in lieu of expensive and complex top-down nanofabrication processes.
  • the proposed technique is a waveguide coupler in submerged lenses for lithography and imaging. Applications can be found in a variety of optical devices, from couplers, modulators, photo detectors and energy devices.
  • FDTD simulation was performed using Lumerical Solutions' product (version 8.7.4). The entire FDTD simulation was performed in three dimensions.
  • Figure 2 the schematic of the FDTD simulation in the XZ plane of the metamaterial nanocomposite structure. Light with X-polarized light propagates along the Z-direction, and the light source wavelength ranges from 200 nm to 3,000 nm. Because metamaterial nanocomposites consist of repeated unit structures in the XY plane, periodic boundary conditions were used in the X- and Y-directions to save computer time. On both sides in the Z-direction, a perfectly matched layer (PML) was used. Two monitors were placed below and above to characterize metamaterial nanocomposites using the S-parameter method.
  • PML perfectly matched layer
  • the minimum mesh size was designed to be one tenth of the smallest structure.
  • the minimum mesh size was designed by first conducting a convergence test.
  • Johnson and Christy material data apply from 200 nm to 3,000 nm.
  • Palik material data is used for the simulation of silver and aluminum metamaterial nanocomposites, and material data such as refractive indices for the materials (gold, silver, and aluminum) used in the simulation are plotted in FIG. 3.
  • Silicon dioxide was selected as the dielectric host material with a refractive index of 1.473.
  • FIG. 4 In order to check the refractive index change according to the nanoparticle size of the metal, FDTD simulation was used. As shown in FIG. 4, in the case of the metal material, perfect electric conductor (PEC) and gold were compared.
  • A), (d), and (g) of FIG. 4 are schematic diagrams of the metamaterial nanocomposite structure, and red squares each represent one unit structure.
  • (B), (e), and (h) of FIG. 4 show an Ex-field distribution of one metamaterial nanocomposite unit structure in a z-normal view as shown in (a) of FIG. , (f), and (i) represent the Hy-field distribution. Ex-field and Hy-field distributions were normalized by the maximum at the edge of the unit structure, which coincided with the red squares of FIGS.
  • the central coordinate of the cross section of the unit structure is typically (0, 0).
  • PEC had a Thomas-Fermi screening length and a penetration depth of zero, and the particle size was always larger than both lengths.
  • the lengths were sub-angstrom scale and 22 nm, respectively.
  • two cases with different particle sizes of 18 nm and 270 nm were compared. These were each smaller and larger than the depth of penetration.
  • the particle size to gap ratio was fixed at 9: 1. As shown in (b), (e), and (h) of FIG.
  • the electric field was strongly localized in the dielectric gap between the metal particles regardless of the metal particle size and clearly identified whether the metal is PEC or gold. This is because the Thomas-Fermi length is much shorter than both the particle and gap widths in three cases. Because of this electric field confinement, the effective permittivity should be close to ten times the dielectric in all three cases.
  • the magnetic field distribution varies considerably with material and size. As shown in FIG. 4C, the magnetic field existed only outside the PEC particles. This shows strong diamagnetic properties. In the case of gold particles, the magnetic field penetrated into the particles. Empirically, this distribution could be investigated with a primary hyperbolic cosine function.
  • the magnetic field did not penetrate mostly from the inner region of the particles, and the field profile exhibited strong diamagnetism and was close to that of the PEC particles (Fig. 4 (i)).
  • the size of the gold nanoparticles is 18 nm (unit structure size 20 nm, gap 2 nm)
  • the magnetic field has a minimum value of 0.9465 at the center of the nanoparticles. It was expressed that it was distributed almost uniformly over [FIG. 4 (f)].
  • the size of the metal nanoparticles corresponding to or smaller than the penetration depth of the nanoparticles is an important key for inducing magnetic penetration through the metal, which prevents a significant reduction in the effective permeability of the metamaterial nanocomposites.
  • FIG. 5A shows the effective dielectric constant ⁇ eff and permeability ⁇ eff of the gold metamaterial nanocomposite structure
  • FIG. 5B shows the effective refractive index and the actual imaginary part of the FOM.
  • the unit structure size and gap width were 20 nm and 2 nm, respectively, and the host material used was SiO 2 .
  • the green dotted line and the red dotted line at the bottom are asymptotes of the effective dielectric constant and permeability of the metamaterial nanocomposite structure.
  • the dotted green line is an asymptote of the effective refractive index of the metamaterial nanocomposite structure.
  • the metamaterial nanocomposites have been shown to exhibit prominent resonance properties around 800 nm and to exhibit very high refractive indices that are nearly constant over a broad wavelength range after the resonance peak, which can be controlled by the shape and size of the particles. This is due to the dipolar resonance of.
  • the asymptotic value of the effective material parameter at the long-wavelength limit, indicated by the dashed line in FIG. 5, is very close to the theoretical prediction.
  • the figure of merit (FOM) defined as Re (n) / Im (n), is considerably higher for metamaterials in the visible and near-infrared regions, which is currently dependent on current design studies, resonances and related strong dispersions. Unlike most of the metamaterials that have been proposed in the past, they are mainly due to the fact that they are independent of resonance.
  • FDTD simulation was used to check the refractive index according to the size of the unit structure of the metamaterial nano composite structure and the width of the gap.
  • the magnetic and electrical properties of the metamaterial nanocomposite can be independently controlled, while the permittivity is not so dependent on the relative size of the particles relative to the depth of penetration.
  • the permittivity can be freely adjusted without noticeable change in permeability by changing the width of the gap while maintaining the size of the unit structure at a constant value of 20 nm under the depth of penetration (Fig. 6 (a)). To (c)]. It can be seen that while the permeability is nearly constant for the gold metamaterial nanocomposite, the permittivity is inversely proportional to the width of the gap.
  • the magnetic property is that there is little magnetic reaction by changing the size of the unit structure while maintaining a constant ratio between the size of the unit structure and the width of the gap to 10: 1 to maintain the same dielectric constant (near 1 Permeability) can be designed with a very strong diamagnetic (permeability near zero) (Fig. 6 (d) to (f)).
  • the theoretical predictions based on geometry and penetration depth of gold are in good agreement with the FDTD results, further demonstrating the model herein.
  • FDTD simulations were conducted on gold, silver, and aluminum to confirm that the theoretical model and analysis also apply to other metals.
  • the resonance wavelength is influenced by the surface plasmon frequency and is markedly short for aluminum metamaterial nanocomposites. This means that although aluminum has a small FOM due to large optical losses, aluminum metamaterial nanocomposites with 20 nm particle size are capable of broadband high refractive index in the visible range. It is also an optically transparent host medium that can utilize various types of dielectrics.
  • the effective refractive index of the metamaterial nanocomposite is continuously proportional to the refractive index of the host medium, a higher effective refractive index can be achieved if the metamaterial nanocomposite is embedded in a host material having a higher refractive index than SiO 2 .
  • Figure 7 (c) is a multi-layer FDTD result of the gold cube and the size and width of the gap of the unit structure of the gold cube is 20 nm and 2 nm, respectively.
  • 5 (d) shows the result of the multilayered FDTD of the gold spheres, the diameter and center-to-center distance of the spheres are 19 nm and 20 nm, respectively.
  • 1 to 20 represent the number of layers.
  • the mono-layer of the sphere is not a true unit structure of the lattice, which also includes truncated spheres from the layers above and below.
  • hole patterns were fabricated using BCP lithography as shown in FIG. 8.
  • 4 inch silicon wafers were cleaned using an ultrasonic bath (ultra-sonic bath). Washing was performed for 15 minutes in order of deionized water, acetone, isopropyl alcohol, and DI water. In order to make the substrate more hydrophilic, UV-ozone treatment was performed for 30 minutes. Prior to coating the PS-b-PMMA, a random brush solution was coated to modify the surface morphology of the substrate.
  • the random brush solution was 1 wt%, dissolved in toluene solvent (99.8% purity, Sigma Aldrich), and the average molecular weight (Mn) of the (PS-r-PMMA) -OH random brush was 8 kg mol with styrene of 62%. Was -1.
  • the substrate was then thermally annealed at 160 ° C. for 12 hours in a vacuum oven.
  • 2 wt% PS-b-PMMA solution was spin-coated at 2,500 rpm for 1 minute.
  • the PS-b-PMMA block copolymer had 140 kg mol-1 and 65 kg mol-1 Mn for PS and PMMA blocks, respectively.
  • the diblock-copolymer (BCP) coated wafers were exposed with 2 J of UV light (UV cross-linker, Spectronics) to decompose the PMMA microphase and harden the microphase. .
  • the wafers were stored for 10 minutes in acetic acid solution (99.9% purity, Junsei corp.) And then washed with deionized water for 10 minutes to remove the PMMA microphase.
  • Acetic acid selectively removes the degraded PMMA, so after the chemical etching process, a 30 nm hole pattern was uniformly produced on the wafer.
  • an ion milling method was used as shown in FIG. 9.
  • the prepared 30 nm pore pattern was separated from the original substrate using hydrofluoric acid (49% to 51% HF solution, JT Baker.).
  • the separated hole pattern was transferred onto the aluminum thin film surface.
  • An aluminum thin film was deposited on a transparent quartz substrate by the vapor deposition method.
  • the aluminum thin film is deposited under high vacuum (resistance method, 10 ⁇ 7 torr).
  • oxygen reactive ion etching (RIE) was performed for 10 seconds to adjust the hole diameter and remove PMMA residue on the substrate.
  • RIE oxygen reactive ion etching
  • Alumina (Al 2 O 3 ) was deposited in the hole pattern transmitted by the deposition method under the same conditions as the aluminum thin film. By sonication in toluene bath, the BCP hole pattern with PS domain was removed from the aluminum surface. After removal of the polymer domain, only the alumina nanocomposite structure for the ion milling mask on the aluminum surface was left. The ion milling process was followed by a nano-sized hard mask and an alumina nanocomposite structure was made. The chamber base was conducted at 8 ⁇ 10 ⁇ 7 torr or less and the process vacuum was conducted at 2 ⁇ 10 ⁇ 4 torr or less with 6 sccm of Ar gas. The ion beam was accelerated by 100 V, 1 mA and the ion milling time was 5-12 minutes.
  • FIG. 10A illustrates a plan view of a hole pattern manufactured by a PS-b-PMMA block copolymer
  • FIG. 10B illustrates an SEM image of an alumina hard mask periodically arranged on an aluminum thin film
  • 10C and 10D illustrate samples prepared by an ion milling process. From the SEM images, it can be seen that the aluminum nanocomposite structures were fabricated using BCP hole patterns of very similar scale.
  • the surface morphology of the prepared aluminum nanocomposite structure was investigated using an atomic force microscope (AFM, XE-100, Park System and AFM, Nanoman, Veeco Instruments Inc.).
  • An atomic force microscope produces a surface image by moving the probe over the surface of the sample.
  • the probe consists of a cantilever with a well defined resonant frequency and a very sharp tip. When the tip is close to the surface it is attracted or repelled. All changes in vibration amplitude or frequency tip are converted to a topo-graphic map.
  • Surface morphologies such as root mean square surface roughness, particle analysis, and line profile were analyzed.
  • the surface topography of the aluminum nanostructures manufactured differently is shown in FIG. 11.
  • Figure 11 (a) is an AFM image showing an aluminum nano hemisphere composite structure using a 10 nm aluminum film for ion milling
  • Figure 11 (b) is an aluminum nano hemisphere composite structure using a 20 nm aluminum film.
  • the surface of the fabricated aluminum nanocomposite structure is in good agreement with the SEM analysis.
  • the heights of the two samples showed similarity. Since thinner aluminum films reduce the time for ion milling, the alumina nano-dots used in the mask may remain high during the ion milling process. Thus, the height analyzed by AFM showed a similarity between 10 nm and 20 nm samples of aluminum.
  • the transmittance and reflectance were measured (Lambda 1050, PerkinElmer). Samples were prepared on a transparent quartz substrate and all samples were at least 1 cm 2 in size. All data were generalized to the transmittance and reflectance of the quartz substrate. The measured wavelength ranged from 175 nm to 750 nm. This was measured at the KAIST Analytical Research Center. As shown in FIG. 12, the transmittance measured by the UV-VIS spectrometer at 175 nm to 750 nm is shown.
  • Samples using 10 nm thick aluminum foil (thin film) show sharper peaks at 195 nm, while samples using 20 nm thick aluminum foil exhibit broad peaks from 190 nm to 220 nm. Over the visible wavelength, all samples showed transparent properties, and the measured transmittance of the 10 nm aluminum sample was almost 100%. The 20 nm aluminum sample showed low transmittance. The difference in the optical properties between the two samples lies in the improved absorption of the nanocomposite structure with the insensitivity of aluminum thickness.
  • the prepared aluminum nanocomposite structure was analyzed by FDTD simulation.
  • the structure was assumed to be a 3 nm native aluminum oxide layer.
  • 13 shows the numerically calculated transmittance by FDTD simulation from 150 nm to 800 nm. The transmittance showed a difference between the measured result and the numerically calculated result.
  • the depth of permeability was deeper than the measured result.
  • the wavelength of the depth position was also a red-shift of the numerical simulation results, and the 10 nm aluminum sample showed a sharp peak at 220 nm where the measured result was 195 nm.
  • the measured results showed one large peak at 190 nm with a small shoulder peak at 220 nm, while the 20 nm aluminum sample showed two broad peaks in the transmission spectrum.
  • This difference comes from the structural difference between the FDTD simulation and the sample produced.
  • the aluminum nanocomposite structure was assumed to have a diameter of 40 nm, a center-to-center distance of 60 nm, and the structure was assumed to be perfectly periodic and symmetrical.
  • the optical response is highly dependent on the nanocomposite structure, and small differences in structural dimensions can lead to different optical responses.
  • the produced sample has both particle size distribution and center-to-center distribution.
  • aluminum plasmon is highly dependent on the deposition environment, and the oxygen content of the aluminum nanocomposite structure affects the plasmonic reaction, it is difficult to accurately reproduce the fabricated aluminum nanocomposite structure by numerical simulation.
  • the fabricated structure differs from the proposed densely arranged unit structure because the gap is about 20 nm
  • the aluminum hemispherical nanocomposite structure realized by BCP lithography shows optical properties similar to the simulation results.
  • the effective refractive index was derived from numerical simulations. As the height increases, the width of the gap decreases because the diameter of the structure is constant at 40 nm. Therefore, samples with a thickness of 20 nm show higher effective refractive index values. Although the value derived above is not high, it shows the feasibility of a simple structure of visible light metamaterial, and higher refractive index can be obtained by reducing the gap of the current sample, which is 20 nm level to 10 nm or less, as confirmed in the simulation. Indicates.

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Abstract

La présente invention concerne une structure nanocomposite de métamatériau comprenant une pluralité de structures unitaires disposées en réseau de manière dense en trois dimensions, chacune comprenant une nanoparticule et un matériau hôte, et un film optique comportant la structure nanocomposite de métamatériau.
PCT/KR2016/015205 2015-12-23 2016-12-23 Structure nanocomposite de métamatériau à indice de réfraction élevé à bande large WO2017111546A1 (fr)

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KR102347673B1 (ko) * 2019-03-29 2022-01-07 한국과학기술원 온도 감응형 스마트 복사냉각 디바이스
CN112558419A (zh) * 2020-12-18 2021-03-26 中国科学院光电技术研究所 一种大口径柔性光学超构表面结构的加工方法

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