WO2017110672A1 - Dispositif d'affichage électroluminescent organique, et procédé de fabrication de celui-ci - Google Patents

Dispositif d'affichage électroluminescent organique, et procédé de fabrication de celui-ci Download PDF

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Publication number
WO2017110672A1
WO2017110672A1 PCT/JP2016/087536 JP2016087536W WO2017110672A1 WO 2017110672 A1 WO2017110672 A1 WO 2017110672A1 JP 2016087536 W JP2016087536 W JP 2016087536W WO 2017110672 A1 WO2017110672 A1 WO 2017110672A1
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Prior art keywords
organic
display device
layer
black matrix
substrate
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PCT/JP2016/087536
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English (en)
Japanese (ja)
Inventor
剛 平瀬
岡本　哲也
亨 妹尾
通 園田
越智　貴志
石田　守
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シャープ株式会社
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Publication of WO2017110672A1 publication Critical patent/WO2017110672A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes

Definitions

  • the present invention relates to an organic EL display device and a manufacturing method thereof.
  • Patent Document 1 in an organic electroluminescence device having at least a lower electrode, a light emitting layer, an upper electrode, and a sealing member on a light-transmitting substrate, the light-transmitting substrate is used to improve the durability of the device. Insulating columnar convex portions are formed in a dotted manner, and the lower surface of the sealing member and the upper surface of the upper electrode are held in a non-contact state.
  • a black matrix is provided as a light shielding layer so as to partition a plurality of sub-pixels arranged in a matrix.
  • the black matrix may be plastically deformed, so that the surface remains depressed and may not completely return.
  • the present invention has been made in view of such a point, and an object of the present invention is to improve resistance to pressing in an organic EL display device including a light shielding layer that partitions sub-pixels.
  • an organic EL display device includes an organic EL element provided in a display region and a light shielding layer provided to partition a plurality of sub-pixels arranged in the display region.
  • the light-shielding layer is made of metal.
  • the light shielding layer is made of metal, the resistance to pressing can be improved in the organic EL display device including the light shielding layer that partitions the sub-pixels.
  • FIG. 1 is a plan view showing a schematic configuration of an organic EL display device according to a first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing a schematic configuration of an organic EL display device taken along line II-II in FIG. It is sectional drawing which shows the internal structure of the organic electroluminescence display which concerns on the 1st Embodiment of this invention. It is sectional drawing of the organic electroluminescent layer which comprises the organic electroluminescent display apparatus which concerns on the 1st Embodiment of this invention. It is a top view of the light shielding layer which comprises the organic electroluminescence display which concerns on the 1st Embodiment of this invention.
  • FIG. 1 is a plan view showing a schematic configuration of the organic EL display device 50a of the present embodiment.
  • FIG. 2 is a cross-sectional view showing a schematic configuration of the organic EL display device 50a along the line II-II in FIG.
  • FIG. 3 is a cross-sectional view showing the internal configuration of the organic EL display device 50a.
  • FIG. 4 is a cross-sectional view of the organic EL layer 16 constituting the organic EL display device 50a.
  • FIG. 5 is a plan view of a black matrix 32a provided as a light shielding layer constituting the organic EL display device 50a.
  • the organic EL display device 50a is provided between the element substrate 20a and the counter substrate 40a provided so as to face each other, and the element substrate 20a and the counter substrate 40a. And a filler layer 25 filled so as to be surrounded by a seal layer (not shown).
  • an organic EL element 19a which will be described later, is provided in a rectangular shape in plan view, whereby a display area D for displaying an image is defined in a rectangular shape.
  • a plurality of pixels are arranged in a matrix. In each pixel of the display area D, as shown in FIG.
  • a sub pixel Pr for performing red gradation display a sub pixel Pg for performing green gradation display, and a blue gradation Sub-pixels Pb for performing display are arranged so as to be adjacent to each other. That is, the plurality of subpixels Pr, Pg, and Pb are arranged in a matrix in the display area D.
  • the element substrate 20 a includes a first resin substrate 10, a first base coat film 11 provided in order on the first resin substrate 10, and an organic EL element provided on the first base coat film 11. 19a.
  • the first resin substrate 10 is, for example, a plastic substrate made of polyimide resin.
  • the first base coat film 11 is an inorganic insulating film such as a silicon oxide film or a silicon nitride film.
  • the organic EL element 19 a includes a plurality of TFTs 12, an interlayer insulating film 13, a plurality of first electrodes 14, an edge cover 15, and a plurality of organic EL layers 16 that are sequentially provided on the first base coat layer 11.
  • the second electrode 17 and the sealing film 18 are provided.
  • the TFT 12 is a switching element provided for each subpixel on the base coat layer 11 as shown in FIG.
  • the TFT 12 includes, for example, a gate electrode provided on the base coat layer 11, a gate insulating film provided so as to cover the gate electrode, and a semiconductor layer provided on the gate insulating film so as to overlap the gate electrode. And a source electrode and a drain electrode provided on the semiconductor layer so as to face each other.
  • the bottom gate type TFT 12 is illustrated, but the TFT 12 may be a top gate type TFT.
  • the interlayer insulating film 13 is provided so as to cover a portion other than a part of the drain electrode of each TFT 12.
  • the interlayer insulating film 13 is made of, for example, a colorless and transparent organic resin material such as an acrylic resin.
  • the plurality of first electrodes 14 are provided in a matrix on the interlayer insulating film 13 so as to correspond to the plurality of subpixels.
  • the first electrode 14 is connected to the drain electrode of each TFT 12 through a contact hole formed in the interlayer insulating film 13.
  • the first electrode 14 has a function of injecting holes into the organic EL layer 16.
  • the first electrode 14 is more preferably formed of a material having a large work function in order to improve the efficiency of hole injection into the organic EL layer 16.
  • the first electrode 14 for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) And metal materials such as lithium fluoride (LiF).
  • the material constituting the first electrode 14 is, for example, magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / oxidation.
  • the material constituting the first electrode 14 is, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), or the like. There may be.
  • the first electrode 14 may be formed by laminating a plurality of layers made of the above materials. Examples of the material having a large work function include indium tin oxide (ITO) and indium zinc oxide (IZO).
  • the edge cover 15 is provided in a lattice shape so as to cover the peripheral edge portion of each first electrode 14.
  • the material constituting the edge cover 15 include silicon nitride (SiO 2 ), silicon nitride such as trisilicon tetranitride (Si 3 N 4 ) (SiNx (x is a positive number)), silicon oxynite.
  • An inorganic film such as a ride (SiNO) or an organic film such as a polyimide resin, an acrylic resin, a polysiloxane resin, or a novolac resin can be used.
  • the plurality of organic EL layers 16 are arranged on each first electrode 14 and are provided in a matrix so as to correspond to the plurality of sub-pixels.
  • the organic EL layer 16 includes a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4, and an electron injection layer provided in this order on the first electrode 14. 5 is provided.
  • the hole injection layer 1 is also called an anode buffer layer, and has a function of improving the efficiency of hole injection from the first electrode 14 to the organic EL layer 16 by bringing the energy levels of the first electrode 14 and the organic EL layer 16 close to each other.
  • a material constituting the hole injection layer for example, a triazole derivative, an oxadiazole derivative, an imidazole derivative, a polyarylalkane derivative, a pyrazoline derivative, a phenylenediamine derivative, an oxazole derivative, a styrylanthracene derivative, a fluorenone derivative, Examples include hydrazone derivatives and stilbene derivatives.
  • the hole transport layer 2 has a function of improving the hole transport efficiency from the first electrode 14 to the organic EL layer 16.
  • examples of the material constituting the hole transport layer 2 include porphyrin derivatives, aromatic tertiary amine compounds, styrylamine derivatives, polyvinylcarbazole, poly-p-phenylene vinylene, polysilane, triazole derivatives, oxadiazole.
  • Derivatives imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon, Examples include hydrogenated amorphous silicon carbide, zinc sulfide, and zinc selenide.
  • the light emitting layer 3 when voltage is applied by the first electrode 14 and the second electrode 17, holes and electrons are injected from the first electrode 14 and the second electrode 17, respectively, and the holes and electrons are recombined. It is an area.
  • the light emitting layer 3 is formed of a material having high light emission efficiency. Examples of the material constituting the light emitting layer 3 include metal oxinoid compounds [8-hydroxyquinoline metal complexes], naphthalene derivatives, anthracene derivatives, diphenylethylene derivatives, vinylacetone derivatives, triphenylamine derivatives, butadiene derivatives, and coumarin derivatives.
  • the electron transport layer 4 has a function of efficiently moving electrons to the light emitting layer 3.
  • examples of the material constituting the electron transport layer 4 include organic compounds such as oxadiazole derivatives, triazole derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, tetracyanoanthraquinodimethane derivatives, diphenoquinone derivatives, and fluorenone derivatives. , Silole derivatives, metal oxinoid compounds and the like.
  • the electron injection layer 5 has a function of bringing the energy levels of the second electrode 17 and the organic EL layer 16 closer to each other, and improving the efficiency with which electrons are injected from the second electrode 17 into the organic EL layer 16.
  • the drive voltage of the organic EL element 18 can be lowered.
  • the electron injection layer 5 is also called a cathode buffer layer.
  • a material constituting the electron injection layer 5 for example, lithium fluoride (LiF), magnesium fluoride (MgF 2 ), calcium fluoride (CaF 2 ), strontium fluoride (SrF 2 ), barium fluoride.
  • Inorganic alkali compounds such as (BaF 2 ), aluminum oxide (Al 2 O 3 ), strontium oxide (SrO), and the like can be given.
  • the second electrode 17 is provided so as to cover each organic EL layer 16 and the edge cover 15.
  • the second electrode 17 has a function of injecting electrons into the organic EL layer 16.
  • the second electrode 17 is more preferably composed of a material having a small work function in order to improve the efficiency of electron injection into the organic EL layer 16.
  • the second electrode 17 for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) And lithium fluoride (LiF).
  • the second electrode 17 is, for example, magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / oxidized astatine (AtO 2).
  • the second electrode 17 may be formed of a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), or the like. .
  • the second electrode 17 may be formed by stacking a plurality of layers made of the above materials.
  • Examples of materials having a small work function include magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), and sodium.
  • (Na) / potassium (K) lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al) Etc.
  • the sealing film 18 is provided so as to cover the stacked body of the plurality of first electrodes 14, the edge cover 15, the plurality of organic EL layers 16, and the second electrode 17.
  • the sealing film 18 has a function of protecting the organic EL layer 16 from moisture and oxygen.
  • silicon nitride SiNx (Si 2 N 3 ) such as silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), and trisilicon tetranitride (Si 3 N 4 ).
  • x is a positive number
  • inorganic materials such as silicon carbonitride (SiCN), and organic materials such as acrylate, polyurea, parylene, polyimide, and polyamide.
  • the counter substrate 40 a is provided as a second resin substrate 30, a second base coat film 31 provided on the second resin substrate 30, and a light shielding layer on the second base coat film 31.
  • the second resin substrate 30 is a plastic substrate made of polyimide resin, for example. Further, one surface of the second resin substrate 30 is ashed to form a clean surface 30a (see FIG. 6).
  • the second base coat film 31 is, for example, an oxide film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film.
  • the black matrix 32a is provided in a lattice shape so as to partition a plurality of subpixels Pr, Pg, and Pb.
  • the black matrix 32a is formed of, for example, a metal film such as an alloy film of nickel and tungsten or molybdenum, or a metal oxide film such as a titanium oxide film.
  • the line width of the black matrix 32a in the display region D is, for example, 3 ⁇ m or more and 30 ⁇ m or less.
  • the thickness of the black matrix 32a is, for example, not less than 0.1 ⁇ m and not more than 0.3 ⁇ m.
  • the red layer 33r, the green layer 33g, and the blue layer 33b are each formed of, for example, an acrylic photosensitive resin colored in red, green, and blue.
  • the filler layer 25 is made of, for example, a thermosetting epoxy resin or silicone resin.
  • the filler layer 25 contains, for example, a metal oxide such as calcium oxide, barium oxide, and aluminum oxide, activated carbon, silica gel, zeolite, and the like, and has a getter function for adsorbing moisture, oxygen, and the like.
  • the seal layer surrounding the filler layer 25 is formed of an epoxy resin, an acrylic resin, a polyimide resin, a phenol resin, or the like having ultraviolet curable properties and / or thermosetting properties.
  • the organic EL display device 50a having the above configuration has flexibility, and in each of the subpixels Pr, Pg, and Pb, the light emitting layer 3 of the organic EL layer 16 appropriately emits light through the TFT 12, thereby displaying an image. Configured to do.
  • FIGS. 6 and 7 are first and second explanatory views showing a method of manufacturing the organic EL display device 50a.
  • the manufacturing method of the organic EL display device 50a of this embodiment includes an element substrate manufacturing process, a counter substrate manufacturing process, and a bonding process.
  • the first base coat film 11 and the organic EL element 19a (TFT 12, the interlayer insulating film 13, the first electrode 14, the edge cover 15 and the organic layer are formed on the surface of the first resin substrate 10 made of polyimide resin using a known method.
  • the EL layer 16 the hole injection layer 1, the hole transport layer 2, the light emitting layer 3, the electron transport layer 4, the electron injection layer 5
  • the second electrode 17, and the sealing film 19 the element substrate 20a is formed. Is made.
  • ⁇ Opposite substrate manufacturing process> First, as shown in steps (a) and (b) of FIG. 6, for example, one surface of the second resin substrate 30 made of polyimide resin is ashed with plasma to remove organic foreign matters attached to the surface. Then, the clean surface 30 a is formed on one surface of the second resin substrate 30.
  • a silicon oxide film or silicon oxynitride is formed on the clean surface 30a of the second resin substrate 30 by, for example, a chemical vapor deposition (CVD) method, a vapor deposition method or a sputtering method.
  • An oxide film 31 is formed by forming an oxide film such as a film to a thickness of about 100 nm to 500 nm.
  • a silicon oxide film, a silicon oxynitride film, or the like is exemplified as the oxide film 31.
  • a vapor deposition method or ALD atomic
  • the film is deposited to a thickness of about 5 nm to 100 nm by the layer deposition method.
  • a metal film 32 such as an alloy film of nickel and tungsten or molybdenum is formed on the entire substrate on which the oxide film 31 has been formed by, for example, vapor deposition or sputtering.
  • the film is formed to a thickness of about 0.1 ⁇ m to 0.3 ⁇ m.
  • the black matrix 32a is formed by patterning the metal film 32 using photolithography.
  • step (f) of FIG. 7 the entire substrate on which the black matrix 32a is formed is colored with red, green or blue, for example, by spin coating or slit coating. Apply a functional resin. Thereafter, the coated film is exposed, developed and baked to form a colored layer of a selected color (for example, the red layer 33r) with a thickness of about 0.7 ⁇ m to 2.5 ⁇ m. Furthermore, as shown in step (g) and step (h) in FIG. 7, the same steps are repeated for the other two colors, so that the other two colored layers (for example, the green layer 33g and the blue layer 33b). Is formed to a thickness of about 0.7 ⁇ m to 2.5 ⁇ m.
  • the counter substrate 40a can be manufactured as described above.
  • a sealant is arranged in a frame shape on the surface of the element substrate 20a by a dispenser method, and a filler is dropped and arranged inside the sealant.
  • the reduced pressure atmosphere for example, 100 Pa or less
  • the reduced pressure atmosphere is released.
  • the outer surfaces of the element substrate 20a and the counter substrate 40a are pressurized.
  • bonding may be performed in a dry atmosphere (dew point minus 30 ° C. or less (preferably dew point minus 70 ° C. or less)).
  • the sealing material sandwiched between the element substrate 20a and the counter substrate 40a is irradiated with ultraviolet rays (about 0.5 J / cm 2 to 10 J / cm 2 (preferably about 1 J / cm 2 to 6 J / cm 2 )). Thereafter, the irradiated bonded body is heated (for example, about 70 ° C. to 120 ° C. for about 10 minutes to 2 hours) to cure the sealing material and the filler, thereby forming the sealing material and the filler layer 25. .
  • the organic EL display device 50a can be manufactured as described above.
  • the black matrix 32a provided as the light shielding layer is made of metal, the Young's modulus of the black matrix 32a is about several hundred GPa. Accordingly, even if the surface of the organic EL display device 50a is pressed, the black matrix 32a in that portion is not plastically deformed. Therefore, the organic EL display device 50a including the black matrix 32a that partitions the sub-pixels Pr, Pg, and Pb. , Resistance to pressing can be improved. Further, since the black matrix 32a is made of metal, not only resistance against pressing but also resistance to bending can be improved.
  • a resin black matrix used in a liquid crystal display device or the like has a relatively low Young's modulus (for example, 10 GPa or less)
  • an organic EL display provided with such a resin black matrix.
  • the black matrix is plastically deformed, so that there is a possibility that the surface remains depressed and cannot completely return.
  • the black matrix 32a is formed on the second resin substrate 30 by forming the second base coat film 31 made of an oxide film on the clean surface 30a whose surface is ashed.
  • the second base coat film 31 is provided. Furthermore, since the black matrix 32a has a thickness of 0.1 ⁇ m or more and 0.3 ⁇ m or less and a line width in the display region D of 30 ⁇ m or less, the contact area between the layers increases, and the second resin substrate 30 and the filler layer The film peeling between 25 can be suppressed.
  • the film thickness of the black matrix 32a is smaller than that of the resin black matrix, the amount of the filler constituting the filler layer 25 is increased, but the process control for arranging the filler on the substrate is performed. It becomes easy. Therefore, a process with relatively low accuracy using a dispenser, a transfer sheet material, or the like can be applied.
  • FIG. 8 is a cross-sectional view showing a schematic configuration of the organic EL display device 50b of the present embodiment.
  • FIG. 9 is a cross-sectional view showing the internal configuration of the organic EL display device 50b.
  • the same parts as those in FIGS. 1 to 7 are denoted by the same reference numerals, and detailed description thereof is omitted.
  • the organic EL display device 50a in which the colored layers 33r, 33g, and 33b are provided on the counter substrate 40a is illustrated.
  • the colored layers 13r, 13g, and 13b are provided on the element substrate 20b.
  • the organic EL display device 50b is exemplified.
  • the organic EL display device 50b is provided between the element substrate 20b and the counter substrate 40b provided so as to face each other, and the element substrate 20b and the counter substrate 40b. And a filler layer 25 filled so as to be surrounded by a seal layer (not shown).
  • an organic EL element 19b which will be described later, is provided in a rectangular shape in plan view, whereby a display area D for image display is defined in a rectangular shape, and the display area D includes a plurality of display areas D. Pixels are arranged in a matrix. In each pixel of the display area D, as shown in FIG. 7, for example, a sub pixel Pr for performing red gradation display, a sub pixel Pg for performing green gradation display, and a blue gradation Sub-pixels Pb for performing display are arranged so as to be adjacent to each other.
  • the element substrate 20 b includes a first resin substrate 10, a first base coat film 11 provided in order on the first resin substrate 10, and an organic EL element provided on the first base coat film 11. 19b.
  • the organic EL element 19 b includes a plurality of TFTs 12, a colored layer (a red layer 13 r, a green layer 13 g, a blue layer 13 b) and a plurality of first electrodes 14 that are sequentially provided on the first base coat layer 11. , An edge cover 15, a plurality of organic EL layers 16, a second electrode 17, and a sealing film 18.
  • the red layer 13r, the green layer 13g, and the blue layer 13b are provided so as to cover a portion other than a part of the drain electrode of each TFT 12, like the interlayer insulating film 15 of the first embodiment.
  • the red layer 13r, the green layer 13g, and the blue layer 13b are each formed of, for example, an acrylic photosensitive resin colored in red, green, and blue.
  • the counter substrate 40 b is provided as a second resin substrate 30, a second base coat film 31 provided on the second resin substrate 30, and a light shielding layer on the second base coat film 31. And a black matrix 32a formed from the formed metal.
  • the organic EL display device 50b having the above configuration has flexibility, and in each of the subpixels Pr, Pg, and Pb, the light emitting layer 3 of the organic EL layer 16 appropriately emits light through the TFT 12, thereby displaying an image. Configured to do.
  • the material of the interlayer insulating film 13 is changed from a colorless one to a predetermined color in the element substrate manufacturing process, It can be manufactured by omitting the formation of the colored layers (red layer 33r, green layer 33g, and blue layer 33b) in the counter substrate manufacturing step.
  • the effects (1) to (3) described above can be obtained.
  • the black matrix 32a provided as the light shielding layer is made of metal, the Young's modulus of the black matrix 32a is about several hundred GPa. Accordingly, even if the surface of the organic EL display device 50b is pressed, the black matrix 32a in that portion is not plastically deformed. Therefore, the organic EL display device 50b provided with the black matrix 32a that partitions the sub-pixels Pr, Pg, and Pb. , Resistance to pressing can be improved. Further, since the black matrix 32a is made of metal, not only resistance to pressing but also resistance to bending can be improved.
  • FIG. 10 is a plan view showing a schematic configuration of the organic EL display device 50c of the present embodiment.
  • FIG. 11 is a cross-sectional view showing a schematic configuration of the organic EL display device 50c taken along line XI-XI in FIG.
  • the structure of the display region D of the organic EL display devices 50a and 50b has been mainly described.
  • the structure of the region F will be mainly described.
  • the organic EL display device 50c is provided between the element substrate 20c and the counter substrate 40c provided so as to face each other, and the element substrate 20c and the counter substrate 40c. And a filler layer 25 filled so as to be surrounded by (not shown).
  • a non-display area F is provided in a frame shape around a rectangular display area D.
  • the configuration of the display area D of the element substrate 20c is substantially the same as the configuration of the display area D of the element substrate 20a of the first embodiment.
  • the second electrode 17 in the display area D is extended on the laminated film of the first base coat layer 11, the interlayer insulating film 13, and the edge cover 15.
  • the extended portion is a common electrode 17c.
  • a contact portion C, which will be described later, of the common electrode 17c is exposed from the sealing film 18, as shown in FIG.
  • the configuration of the display area D of the element substrate 20a of the first embodiment is exemplified as the configuration of the display area D of the element substrate 20c.
  • the display area D of the element substrate 20b of the second embodiment is illustrated. It may be substantially the same as the configuration.
  • the configuration of the display area D of the counter substrate 40c is substantially the same as the configuration of the display area D of the counter substrate 40a of the first embodiment.
  • the black matrix 32a of the display area D is extended so as to reach the contact portion C as shown in FIGS.
  • the configuration of the display area D of the counter substrate 40a of the first embodiment is exemplified as the configuration of the display area D of the counter substrate 40c.
  • the display area D of the counter substrate 40b of the second embodiment is exemplified. It may be substantially the same as the configuration.
  • the common electrode 17c on the element substrate 20c and the black matrix 32a on the counter substrate 40c are electrically connected via the hole filler 26.
  • the contact portion C is configured.
  • the hole filler 26 is obtained by dispersing conductive particles 26 a in, for example, a thermosetting epoxy resin or the like.
  • the configuration in which one contact portion C is provided in the non-display area F is illustrated, but a plurality of contact portions C may be provided in the non-display area F.
  • the contact portion C may be provided so as to overlap the black matrix 32a at the outermost part of the display area D. Further, when the counter substrate 40c is provided with a touch panel, the touch panel and the common electrode 17c on the element substrate 20c may be electrically connected in the configuration as the contact portion C.
  • the organic EL display device 50c having the above configuration has flexibility, and in each of the subpixels Pr, Pg, and Pb, the light emitting layer 3 of the organic EL layer 16 appropriately emits light through the TFT 12, thereby generating an image. It is configured to display.
  • the following effect (4) can be obtained in addition to the effects (1) to (3) described above.
  • the organic EL display devices 50a to 50c in which the black matrix 32a (light shielding layer) is provided on the counter substrates 40a to 40c are exemplified, but the black matrix (light shielding layer) is the second of the element substrates 20a to 20c.
  • the black matrix (light shielding layer) is electrically connected to a common electrode that is electrically connected to the cathode (second electrode 17).
  • the organic EL display device provided with the black matrix for stripe arrangement has been exemplified, but the present invention can also be applied to an organic EL display device provided with a black matrix for stripe arrangement. it can.
  • an organic EL layer having a five-layer structure of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer has been exemplified.
  • a three-layer structure of a hole injection layer / hole transport layer, a light emitting layer, and an electron transport layer / electron injection layer may be employed.
  • the organic EL display device using the first electrode as an anode and the second electrode as a cathode has been exemplified.
  • the present invention reverses the stacked structure of the organic EL layers and uses the first electrode as a cathode.
  • the present invention can also be applied to an organic EL display device using the second electrode as an anode.
  • the organic EL display device including the element substrate using the TFT electrode connected to the first electrode as the drain electrode is illustrated.
  • the present invention is not limited to the TFT connected to the first electrode.
  • the present invention can also be applied to an organic EL display device including an element substrate whose electrode is called a source electrode.
  • the present invention is useful for flexible organic EL display devices.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un dispositif d'affichage électroluminescent organique (50a) qui comporte : un élément électroluminescent organique disposé dans une région d'affichage; et une couche de protection contre la lumière (32a) disposée de manière à compartimenter une pluralité de sous-pixels (Pr), (Pg) et (Pb) agencés dans la région d'affichage, la couche de protection contre la lumière étant constituée d'un métal (32a).
PCT/JP2016/087536 2015-12-24 2016-12-16 Dispositif d'affichage électroluminescent organique, et procédé de fabrication de celui-ci WO2017110672A1 (fr)

Applications Claiming Priority (2)

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JP2015251523 2015-12-24
JP2015-251523 2015-12-24

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WO2017110672A1 true WO2017110672A1 (fr) 2017-06-29

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273327A (ja) * 2006-03-31 2007-10-18 Dainippon Printing Co Ltd 有機エレクトロルミネッセンス表示装置
US20080169750A1 (en) * 2007-01-15 2008-07-17 Kim Mihae Electroluminescent display
JP2012174334A (ja) * 2011-02-17 2012-09-10 Dainippon Printing Co Ltd 有機ｅｌパネル及びその製造方法
JP2012215843A (ja) * 2011-03-31 2012-11-08 Jsr Corp 画素パターンの形成方法、カラーフィルタ及び表示素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273327A (ja) * 2006-03-31 2007-10-18 Dainippon Printing Co Ltd 有機エレクトロルミネッセンス表示装置
US20080169750A1 (en) * 2007-01-15 2008-07-17 Kim Mihae Electroluminescent display
JP2012174334A (ja) * 2011-02-17 2012-09-10 Dainippon Printing Co Ltd 有機ｅｌパネル及びその製造方法
JP2012215843A (ja) * 2011-03-31 2012-11-08 Jsr Corp 画素パターンの形成方法、カラーフィルタ及び表示素子

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