WO2017101435A1 - Method for making main-grid-free welding strip for solar cell - Google Patents

Method for making main-grid-free welding strip for solar cell Download PDF

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Publication number
WO2017101435A1
WO2017101435A1 PCT/CN2016/089966 CN2016089966W WO2017101435A1 WO 2017101435 A1 WO2017101435 A1 WO 2017101435A1 CN 2016089966 W CN2016089966 W CN 2016089966W WO 2017101435 A1 WO2017101435 A1 WO 2017101435A1
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melt adhesive
adhesive film
hot melt
hot
solar cell
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PCT/CN2016/089966
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French (fr)
Chinese (zh)
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何凤琴
杨振英
李嘉亮
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王能青
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02002Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Definitions

  • the present invention relates to the field of solar cell manufacturing technology, and in particular to a method for preparing a non-main gate solder ribbon for a solar cell.
  • a crystalline silicon solar cell is an electronic component that converts solar energy into electrical energy.
  • the electrode structure In the front electrode of the crystalline silicon solar cell, the electrode structure generally includes a main gate line and a sub-gate line which are criss-crossed, and the main gate line is electrically connected to the sub-gate line.
  • the battery When there is light, the battery generates a current, and the current flows through the internal emitter to the surface electrode sub-gate line, collects through the sub-gate line and then flows to the battery main grid for export. The current will be lost during the collection of the secondary gate line, which we call the power loss of the resistor.
  • the main grid line and the sub-gate line of the battery are on the light-receiving surface of the battery, which inevitably blocks a part of the light from being irradiated on the surface of the battery, thereby reducing the effective light-receiving area of the battery, which is called optical loss.
  • Increasing the number of main gate lines and sub-gate lines can improve the collection ability of the current generated by the solar cell and improve the conversion efficiency of the battery, but if the width of the gate line is not lowered, the increased amount increases the occlusion loss. Therefore, the core of the gate line design of the electrode structure is a balance between shading and conduction.
  • the proposed solution is to increase the number of main gates of the front electrode, from two or three thick main gates over 2 mm wide to multiple ones less than one.
  • the millimeter-wide narrow-line main grid row even uses overlapping layers of two silver grid lines to improve the conductive effect. From a technical point of view, these methods can slightly improve photovoltaic efficiency.
  • the cost of the silver material required to invest is much higher than the return that can be earned by efficiency gains, and it does not benefit the industry. From the perspective of production cost, crystalline silicon and silver paste are the two most expensive materials, which can improve battery efficiency without increasing production costs. It is a technical problem that needs to be solved urgently in the current market environment with narrow profit margins.
  • the present invention provides a method for preparing a non-main gate strip for a solar cell, which is prepared by a hot pressing process using a copper wire and a hot melt adhesive film as a material.
  • the gate soldering strip is applied to a solar cell without a main gate, which can satisfy the shading while satisfying the guide.
  • the requirements of the preparation method are simple, meet the technical problems of reducing the material cost, and simplify the complicated process of realizing high photovoltaic efficiency battery structure and high conductivity low light-shielding electrode structure on the surface of the silicon wafer in the solar cell production process. .
  • a method for preparing a non-main gate strip for a solar cell comprising: discharging a plurality of copper wires from a copper wire take-up rack to a hot pressing device, wherein the plurality of copper wires are located in the same horizontal plane and mutually Disposed in parallel; the first hot melt adhesive film and the second hot melt adhesive film are respectively discharged by the first unwinding mechanism and the second unwinding mechanism, and the first hot melt adhesive film is cut by the first cutting device to form a plurality of a hot melt adhesive film, the second hot melt adhesive film is cut by the second cutting device to form a plurality of second hot melt adhesive film; wherein the first hot melt adhesive film and the second hot melt adhesive film
  • the sheets are respectively alternately transported to the hot pressing device by the first conveying device and the second conveying device, wherein the first hot melt adhesive film is located above the plurality of copper wires, and the second hot melt adhesive film The sheet is located below the plurality of copper wires, and the first hot melt adhesive film and the second hot melt adhesive film have
  • the plurality of copper wires are arranged in parallel with each other at equal intervals, and a spacing between two adjacent copper wires is 6 to 10 mm.
  • the pay-off tension of each of the copper wires is separately adjusted by the copper wire pay-off frame, and the tension of the wire is in the range of 5 to 50N.
  • first unwinding mechanism and the second unwinding mechanism respectively release the first hot melt adhesive film and the second hot melt adhesive film in a manner of constant linear velocity.
  • the linear velocity of the first unwinding mechanism for discharging the first hot melt adhesive film is 5 to 10 m/min
  • the linear velocity of the second unwinding mechanism for discharging the second hot melt adhesive film is 5 to 10 m/ Min.
  • first unwinding mechanism and the second unwinding mechanism have the same linear velocity.
  • the distance between the first hot melt adhesive film and the second hot melt adhesive film in the conveying direction is 2 to 3 mm.
  • the copper wire is a tinned copper wire
  • the first hot melt adhesive film and the second hot melt adhesive film are respectively PO film.
  • the copper wire has a wire diameter of 0.2 to 0.3 mm, and the first hot melt adhesive film and the second hot melt adhesive film The thickness is 0.09 to 0.11 mm, respectively.
  • first hot melt adhesive film has the same length and width
  • second hot melt adhesive film has the same length and width
  • the invention provides a method for preparing a non-main gate strip for a solar cell, which is prepared by using a copper wire and a hot melt film as a material, and is obtained by a hot pressing process to obtain a main gateless strip.
  • the preparation process is simple, meets the technical problem of reducing the material cost, and simplifies the surface of the silicon wafer in the solar cell production process.
  • a complex process that achieves a high photovoltaic efficiency cell structure and a high conductivity low light-shielded electrode structure.
  • FIG. 1 is a process flow diagram of a method for preparing a main gateless strip according to an embodiment of the present invention
  • FIG. 2 is an exemplary diagram of a process of a method for fabricating a main gateless strip according to an embodiment of the present invention
  • FIG 3 is a schematic structural view of a main gateless ribbon according to an embodiment of the present invention.
  • This embodiment provides a method for preparing a non-main gate strip for a solar cell. Referring to Figure 1 in conjunction with Figures 2 and 3, the method includes the following steps:
  • a plurality of copper wires are discharged from the copper wire take-up frame and sent to the hot pressing device, wherein the plurality of copper wires are located in the same horizontal plane and arranged in parallel with each other.
  • the copper wire take-up frame 1 discharges a plurality of copper wires 10 to the hot pressing device 2, and the wire tension of each copper wire 10 can be separately adjusted by the copper wire paying frame 1
  • the wire tension can range from 5 to 50N.
  • the plurality of copper wires 10 are arranged in parallel at equal intervals, and the spacing d1 between the adjacent two copper wires 10 may be selected to be 6 to 10 mm. In the present embodiment, the pitch d1 is set to 8 mm.
  • the number of copper wires 10 is mainly set according to the width of the solder ribbon to be prepared and the pitch d1.
  • a wire comb is disposed in the copper wire take-up frame 1, and the size of the distance d1 can be adjusted by adjusting the wire comb.
  • the first unwinding mechanism and the second unwinding mechanism respectively provide a plurality of first hot melt adhesive film sheets and a plurality of second hot melt adhesive film sheets to be transported into the hot pressing device. Specifically, as shown in FIG. 2 and referring to FIG. 3, the first hot melt adhesive film 21 is discharged by the first unwinding mechanism 3a, and the first hot melt adhesive film 21 is cut by the first cutting device 4a to form a plurality of first hot melts.
  • the rubber film sheet 21a, the plurality of first hot melt adhesive film sheets 21a are sequentially conveyed to the heat pressing device 2 by the first conveying device 5a; likewise, the second hot melt adhesive film 22 is discharged by the second unwinding mechanism 3b, The second hot melt adhesive film 22 is cut by the second cutting device 4b to form a plurality of second hot melt adhesive film sheets 22a, and the plurality of second hot melt adhesive film sheets 22a are sequentially conveyed to the hot pressing device 2 by the second transfer device 5b. Further, the first hot melt adhesive film 21a and the second hot melt adhesive film 22a are sequentially alternately transported to the hot pressing device 2 by the first conveying device 5a and the second conveying device 5b, respectively.
  • a hot melt adhesive film 21a is conveyed above the plurality of copper wires 10, the second hot melt adhesive film 22a is conveyed under the plurality of copper wires 10, and the first heat
  • the melt film 21a and the second hot melt film 22a have a separation distance d2 in the conveying direction.
  • the plurality of copper wires are respectively thermocompression bonded to the first hot melt adhesive film and the second hot melt adhesive film by a hot pressing device.
  • a hot pressing device Specifically, referring to FIG. 2 and FIG. 3, after the copper wire 10, the first hot melt adhesive film 21a and the second hot melt adhesive film 22a are respectively transported to the hot pressing device 2, the hot pressing device 2 will be the copper wire 10, the first A hot melt adhesive film 21a and a second hot melt adhesive film 22a are thermocompression bonded to form a solder ribbon, and FIG. 3 is a schematic structural view of the main gateless solder ribbon obtained by thermocompression bonding, and the dotted line portion of the figure indicates the first hot melt.
  • the film 21a is located above the copper wire 10.
  • the winding mechanism rotates the plurality of copper wires that are combined with the first hot melt adhesive film and the second hot melt adhesive film. Specifically, referring to FIG. 2 and FIG. 3, after the non-main gate strip obtained by thermocompression bonding in step S103, the winding mechanism 6 performs a winding operation to recover the finished product.
  • the first unwinding mechanism 3a and the second unwinding mechanism 3b release the first hot melt adhesive film 21 and the second hot melt adhesive film 22 by using a constant linear velocity.
  • the linear velocity of the first hot-melt adhesive film 21 may be 5 to 10 m/min, and the linear velocity range of the second unwinding mechanism 3b for discharging the second hot melt adhesive film 22 may be 5 ⁇ 10m / min.
  • the linear velocity of the first unwinding mechanism 3a and the second unwinding mechanism 3b are the same.
  • the distance d2 between the first hot melt adhesive film 21a and the second hot melt adhesive film 22a in the transport direction may be 2 to 3 mm.
  • the first hot melt adhesive film 21a and the second hot melt adhesive film 22a have a separation distance d2, which facilitates the use of the solder ribbon during use. Cropped.
  • the copper wire 10 used in the embodiment is a tinned copper wire, and the wire diameter may be 0.2 to 0.3 mm.
  • Place The first hot melt adhesive film 21 and the second hot melt adhesive film 22 are respectively PO (polyolefin) adhesive films, and the first hot melt adhesive film 21 and the second hot melt adhesive film 22 have a thickness of 0.09, respectively. ⁇ 0.11mm.
  • the width of the first hot melt adhesive film 21 is D1
  • a hot melt adhesive film 21a has a width D1 and a length L1.
  • the width of the second hot melt adhesive film 22 is D2, and the width of the second hot melt adhesive film 22 after the second hot melt adhesive film 22 is cut by the second cutting device 4b to form the second hot melt adhesive film 22a.
  • the length is L2.
  • D1 D2
  • the invention provides a method for preparing a non-main gate strip for a solar cell, which is prepared by using a copper wire and a hot melt film as a material, and is obtained by a hot pressing process to obtain a main gateless strip.
  • the preparation process is simple, meets the technical problem of reducing the material cost, and simplifies the surface of the silicon wafer in the solar cell production process.
  • a complex process that achieves a high photovoltaic efficiency cell structure and a high conductivity low light-shielded electrode structure.
  • the first hot melt adhesive film and the second hot melt adhesive film are disposed on both sides of the copper wire, and are arranged in a staggered manner, which is effective compared to placing the adhesive film on one side. Avoid copper wire breaks, provide work efficiency and reduce costs.

Abstract

Provided is a method for making main-grid-free welding strips for a solar cell. The method comprises: a copper wire release stand (1) releases a plurality of copper wires (10) into a hot press device (2); a first unwinding mechanism (3a) and a second unwinding mechanism (3b) respectively release a first hot-melt adhesive film (21) and a second hot-melt adhesive film (21); the first hot-melt adhesive film (21) is cut into a plurality of first hot-melt adhesive film sheets (21a), and the second hot-melt adhesive film (22) is cut into a plurality of second hot-melt adhesive film sheets (22a); the first hot-melt adhesive film sheets (21a) and the second hot-melt adhesive film sheets (22a) are sequentially and alternately conveyed to the hot press device (2), the first hot-melt adhesive film sheets (21a) being located above the plurality of copper wires (10), and the second hot-melt adhesive film sheets (22a) being located below the plurality of copper wires (10); the hot press device (2) thermo-compression bonds the plurality of copper wires (10) respectively to the first hot-melt adhesive film sheets (21a) and the second hot-melt adhesive film sheets (22a); a winding mechanism (6) winds the plurality of copper wires (10) that are thermo-compression bonded to the first hot-melt adhesive film sheets (21a) and second hot-melt adhesive film sheets (22a).

Description

一种用于太阳能电池的无主栅焊带的制备方法Method for preparing non-main gate solder ribbon for solar cell 技术领域Technical field
本发明涉及太阳能电池制造技术领域,具体涉及一种用于太阳能电池的无主栅焊带的制备方法。The present invention relates to the field of solar cell manufacturing technology, and in particular to a method for preparing a non-main gate solder ribbon for a solar cell.
背景技术Background technique
晶硅太阳能电池是一种可以将太阳光能转化成为电能的电子元器件。晶硅太阳能电池的正面电极中,电极结构通常包括纵横交错的主栅线和副栅线,主栅线与副栅线电性相连。当有光照时,电池片就会产生电流,电流经过内部发射极流向表面电极副栅线,经由副栅线收集然后汇流到电池主栅线上进行导出。电流在副栅线收集的过程中会产生损失,这种我们称为是电阻的功率损失。电池主栅线和副栅线处于电池的受光面,这样必然会遮挡一部分光照射在电池表面,从而减少了电池的有效受光面积,这部分损失我们称之为光学损失。增加主栅线和副栅线的数量可以提高对于太阳电池形成电流的收集能力,提高电池的转换效率,但是如果栅线宽度不进行降低,增加数量便会增加遮挡损失。因此,电极结构的栅线设计的核心在于遮光和导电之间取得平衡。A crystalline silicon solar cell is an electronic component that converts solar energy into electrical energy. In the front electrode of the crystalline silicon solar cell, the electrode structure generally includes a main gate line and a sub-gate line which are criss-crossed, and the main gate line is electrically connected to the sub-gate line. When there is light, the battery generates a current, and the current flows through the internal emitter to the surface electrode sub-gate line, collects through the sub-gate line and then flows to the battery main grid for export. The current will be lost during the collection of the secondary gate line, which we call the power loss of the resistor. The main grid line and the sub-gate line of the battery are on the light-receiving surface of the battery, which inevitably blocks a part of the light from being irradiated on the surface of the battery, thereby reducing the effective light-receiving area of the battery, which is called optical loss. Increasing the number of main gate lines and sub-gate lines can improve the collection ability of the current generated by the solar cell and improve the conversion efficiency of the battery, but if the width of the gate line is not lowered, the increased amount increases the occlusion loss. Therefore, the core of the gate line design of the electrode structure is a balance between shading and conduction.
在现今的太阳能电池生产技术基础上,厂商为了进一步提高电池的光伏效率,提出的解决方案是增加正面电极的主栅数量,从二或三根超过2毫米宽的粗主栅变成多根小于1毫米宽的窄线主栅排,甚至采用重叠印刷两层银栅线,务求提高导电效果。从技术的角度来看,这些方法都能稍微提升光伏效率。然而,所需投入的银材料成本远高于效率提升所能赚取的回报,对产业毫无受益。从生产成本的角度考虑,晶硅和银浆是最贵的两种材料,能实现提高电池效率而无须增加生产成本,是当前利润空间狭小的市场环境下,光伏产业亟待解决的技术问题。Based on today's solar cell production technology, in order to further improve the photovoltaic efficiency of the battery, the proposed solution is to increase the number of main gates of the front electrode, from two or three thick main gates over 2 mm wide to multiple ones less than one. The millimeter-wide narrow-line main grid row even uses overlapping layers of two silver grid lines to improve the conductive effect. From a technical point of view, these methods can slightly improve photovoltaic efficiency. However, the cost of the silver material required to invest is much higher than the return that can be earned by efficiency gains, and it does not benefit the industry. From the perspective of production cost, crystalline silicon and silver paste are the two most expensive materials, which can improve battery efficiency without increasing production costs. It is a technical problem that needs to be solved urgently in the current market environment with narrow profit margins.
发明内容Summary of the invention
鉴于现有技术存在的不足,本发明提供了一种用于太阳能电池的无主栅焊带的制备方法,该制备方法以铜线和热熔胶膜为材料,通过热压工艺制备获得无主栅焊带,应用于无主栅的太阳能电池中,既能满足遮光少同时又能满足导 电的要求;其制备方法的工艺过程简单,满足降低材料成本的技术问题,也简化了太阳能电池生产流程中同时在硅片表面实现高光伏效率电池结构和高导电率低遮光电极结构的复杂工艺。In view of the deficiencies of the prior art, the present invention provides a method for preparing a non-main gate strip for a solar cell, which is prepared by a hot pressing process using a copper wire and a hot melt adhesive film as a material. The gate soldering strip is applied to a solar cell without a main gate, which can satisfy the shading while satisfying the guide. The requirements of the preparation method are simple, meet the technical problems of reducing the material cost, and simplify the complicated process of realizing high photovoltaic efficiency battery structure and high conductivity low light-shielding electrode structure on the surface of the silicon wafer in the solar cell production process. .
为了实现上述目的,本发明采用了如下的技术方案:In order to achieve the above object, the present invention adopts the following technical solutions:
一种用于太阳能电池的无主栅焊带的制备方法,该方法包括:由铜线放线架放出多根铜线输送到热压装置中,所述多根铜线位于同一水平面内且相互平行排布;由第一放卷机构和第二放卷机构分别放出第一热熔胶膜和第二热熔胶膜,所述第一热熔胶膜被第一切割装置切割形成多个第一热熔胶膜片,所述第二热熔胶膜被第二切割装置切割形成多个第二热熔胶膜片;其中,所述第一热熔胶膜片和第二热熔胶膜片分别由第一传送装置和第二传送装置依次相互交替地输送到热压装置中,所述第一热熔胶膜片位于所述多根铜线的上方,所述第二热熔胶膜片位于所述多根铜线的下方,并且,所述第一热熔胶膜片和第二热熔胶膜片在输送方向上具有一间隔距离;由热压装置将所述多根铜线与所述第一热熔胶膜片和第二热熔胶膜片分别热压结合;由收卷机构对与第一热熔胶膜片和第二热熔胶膜片热压结合后的所述多根铜线作收卷动作。A method for preparing a non-main gate strip for a solar cell, the method comprising: discharging a plurality of copper wires from a copper wire take-up rack to a hot pressing device, wherein the plurality of copper wires are located in the same horizontal plane and mutually Disposed in parallel; the first hot melt adhesive film and the second hot melt adhesive film are respectively discharged by the first unwinding mechanism and the second unwinding mechanism, and the first hot melt adhesive film is cut by the first cutting device to form a plurality of a hot melt adhesive film, the second hot melt adhesive film is cut by the second cutting device to form a plurality of second hot melt adhesive film; wherein the first hot melt adhesive film and the second hot melt adhesive film The sheets are respectively alternately transported to the hot pressing device by the first conveying device and the second conveying device, wherein the first hot melt adhesive film is located above the plurality of copper wires, and the second hot melt adhesive film The sheet is located below the plurality of copper wires, and the first hot melt adhesive film and the second hot melt adhesive film have a separation distance in the conveying direction; the plurality of copper wires are pressed by the hot pressing device Cooperating with the first hot melt adhesive film and the second hot melt adhesive film respectively; After the hot melt adhesive film and thermocompression bonding a second plurality of hot melt adhesive film for copper winding operation.
其中,所述多根铜线呈等间距相互平行排布,相邻两根铜线之间的间距为6~10mm。Wherein, the plurality of copper wires are arranged in parallel with each other at equal intervals, and a spacing between two adjacent copper wires is 6 to 10 mm.
其中,每一所述铜线的放线张力由所述铜线放线架单独调节,放线张力的范围是5~50N。Wherein, the pay-off tension of each of the copper wires is separately adjusted by the copper wire pay-off frame, and the tension of the wire is in the range of 5 to 50N.
其中,所述第一放卷机构和第二放卷机构分别采用线速度恒定的方式放出第一热熔胶膜和第二热熔胶膜。Wherein, the first unwinding mechanism and the second unwinding mechanism respectively release the first hot melt adhesive film and the second hot melt adhesive film in a manner of constant linear velocity.
其中,所述第一放卷机构放出第一热熔胶膜的线速度范围是5~10m/min,所述第二放卷机构放出第二热熔胶膜的线速度范围是5~10m/min。Wherein, the linear velocity of the first unwinding mechanism for discharging the first hot melt adhesive film is 5 to 10 m/min, and the linear velocity of the second unwinding mechanism for discharging the second hot melt adhesive film is 5 to 10 m/ Min.
其中,所述第一放卷机构和所述第二放卷机构的线速度相同。Wherein the first unwinding mechanism and the second unwinding mechanism have the same linear velocity.
其中,所述第一热熔胶膜片和第二热熔胶膜片在输送方向上的间隔距离为2~3mm。The distance between the first hot melt adhesive film and the second hot melt adhesive film in the conveying direction is 2 to 3 mm.
其中,所述铜线为镀锡铜线,所述第一热熔胶膜和第二热熔胶膜分别为PO胶膜。Wherein, the copper wire is a tinned copper wire, and the first hot melt adhesive film and the second hot melt adhesive film are respectively PO film.
其中,所述铜线的线径为0.2~0.3mm,所述第一热熔胶膜和第二热熔胶膜的 厚度分别为0.09~0.11mm。Wherein the copper wire has a wire diameter of 0.2 to 0.3 mm, and the first hot melt adhesive film and the second hot melt adhesive film The thickness is 0.09 to 0.11 mm, respectively.
其中,所述第一热熔胶膜片的长度和宽度相同,所述第二热熔胶膜片的长度和宽度相同。Wherein the first hot melt adhesive film has the same length and width, and the second hot melt adhesive film has the same length and width.
本发明实施例提供的一种用于太阳能电池的无主栅焊带的制备方法,该制备方法以铜线和热熔胶膜为材料,通过热压工艺制备获得无主栅焊带,应用于无主栅的太阳能电池中,既能满足遮光少同时又能满足导电的要求;其制备方法的工艺过程简单,满足降低材料成本的技术问题,也简化了太阳能电池生产流程中同时在硅片表面实现高光伏效率电池结构和高导电率低遮光电极结构的复杂工艺。The invention provides a method for preparing a non-main gate strip for a solar cell, which is prepared by using a copper wire and a hot melt film as a material, and is obtained by a hot pressing process to obtain a main gateless strip. In the solar cell without main grid, it can meet the requirements of less shading while satisfying the conductivity; the preparation process is simple, meets the technical problem of reducing the material cost, and simplifies the surface of the silicon wafer in the solar cell production process. A complex process that achieves a high photovoltaic efficiency cell structure and a high conductivity low light-shielded electrode structure.
附图说明DRAWINGS
图1是本发明实施例提供的无主栅焊带的制备方法的工艺流程图;1 is a process flow diagram of a method for preparing a main gateless strip according to an embodiment of the present invention;
图2是本发明实施例提供的无主栅焊带的制备方法的过程的示例性图示;2 is an exemplary diagram of a process of a method for fabricating a main gateless strip according to an embodiment of the present invention;
图3是本发明实施例提供的无主栅焊带的结构示意图。3 is a schematic structural view of a main gateless ribbon according to an embodiment of the present invention.
具体实施方式detailed description
为使本发明的目的、技术方案和优点更加清楚,下面结合附图对本发明的具体实施方式进行详细说明。这些实施方式的示例在附图中进行了例示。附图中所示和根据附图描述的本发明的实施方式仅仅是示例性的,并且本发明并不限于这些实施方式。The embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Examples of these embodiments are exemplified in the drawings. The embodiments of the invention shown in the drawings and described in the drawings are merely exemplary, and the invention is not limited to the embodiments.
在此,还需要说明的是,为了避免因不必要的细节而模糊了本发明,在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤,而省略了与本发明关系不大的其他细节。In this context, it is also to be noted that in order to avoid obscuring the invention by unnecessary detail, only the structures and/or processing steps closely related to the solution according to the invention are shown in the drawings, and the Other details that are not relevant to the present invention.
本实施例提供了一种用于太阳能电池的无主栅焊带的制备方法。参阅图1并结合图2和图3,该方法包括以下步骤:This embodiment provides a method for preparing a non-main gate strip for a solar cell. Referring to Figure 1 in conjunction with Figures 2 and 3, the method includes the following steps:
S101、由铜线放线架放出多根铜线输送到热压装置中,所述多根铜线位于同一水平面内且相互平行排布。具体地,如图2所示,铜线放线架1放出多根铜线10输送到热压装置2中,每一铜线10的放线张力可以由铜线放线架1单独调节,放线张力的范围可以是5~50N。通常地,如图3所示,多根铜线10呈等间距相互平行排布,相邻两根铜线10之间的间距d1可以选择为6~10mm。本实施例中间距d1设定为8mm。铜线10数量主要根据所要制备的焊带的宽度以及间距d1来设定。 铜线放线架1中设置有过线梳子,通过调整过线梳子可以调整获得间距d1的大小。S101: A plurality of copper wires are discharged from the copper wire take-up frame and sent to the hot pressing device, wherein the plurality of copper wires are located in the same horizontal plane and arranged in parallel with each other. Specifically, as shown in FIG. 2, the copper wire take-up frame 1 discharges a plurality of copper wires 10 to the hot pressing device 2, and the wire tension of each copper wire 10 can be separately adjusted by the copper wire paying frame 1 The wire tension can range from 5 to 50N. Generally, as shown in FIG. 3, the plurality of copper wires 10 are arranged in parallel at equal intervals, and the spacing d1 between the adjacent two copper wires 10 may be selected to be 6 to 10 mm. In the present embodiment, the pitch d1 is set to 8 mm. The number of copper wires 10 is mainly set according to the width of the solder ribbon to be prepared and the pitch d1. A wire comb is disposed in the copper wire take-up frame 1, and the size of the distance d1 can be adjusted by adjusting the wire comb.
S102、由第一放卷机构和第二放卷机构分别提供多个第一热熔胶膜片和多个第二热熔胶膜片输送到热压装置中。具体地,如图2所示并参阅图3,由第一放卷机构3a放出第一热熔胶膜21,第一热熔胶膜21被第一切割装置4a切割形成多个第一热熔胶膜片21a,多个第一热熔胶膜片21a被第一传送装置5a依次输送到热压装置2中;同样地,由第二放卷机构3b放出第二热熔胶膜22,第二热熔胶膜22被第二切割装置4b切割形成多个第二热熔胶膜片22a,多个第二热熔胶膜片22a被第二传送装置5b依次输送到热压装置2中。进一步地,所述第一热熔胶膜片21a和第二热熔胶膜片22a分别由第一传送装置5a和第二传送装置5b依次相互交替地输送到热压装置2中,所述第一热熔胶膜片21a被输送到所述多根铜线10的上方,所述第二热熔胶膜片22a被输送到所述多根铜线10的下方,并且,所述第一热熔胶膜片21a和第二热熔胶膜片22a在输送方向上具有一间隔距离d2。S102. The first unwinding mechanism and the second unwinding mechanism respectively provide a plurality of first hot melt adhesive film sheets and a plurality of second hot melt adhesive film sheets to be transported into the hot pressing device. Specifically, as shown in FIG. 2 and referring to FIG. 3, the first hot melt adhesive film 21 is discharged by the first unwinding mechanism 3a, and the first hot melt adhesive film 21 is cut by the first cutting device 4a to form a plurality of first hot melts. The rubber film sheet 21a, the plurality of first hot melt adhesive film sheets 21a are sequentially conveyed to the heat pressing device 2 by the first conveying device 5a; likewise, the second hot melt adhesive film 22 is discharged by the second unwinding mechanism 3b, The second hot melt adhesive film 22 is cut by the second cutting device 4b to form a plurality of second hot melt adhesive film sheets 22a, and the plurality of second hot melt adhesive film sheets 22a are sequentially conveyed to the hot pressing device 2 by the second transfer device 5b. Further, the first hot melt adhesive film 21a and the second hot melt adhesive film 22a are sequentially alternately transported to the hot pressing device 2 by the first conveying device 5a and the second conveying device 5b, respectively. A hot melt adhesive film 21a is conveyed above the plurality of copper wires 10, the second hot melt adhesive film 22a is conveyed under the plurality of copper wires 10, and the first heat The melt film 21a and the second hot melt film 22a have a separation distance d2 in the conveying direction.
S103、由热压装置将所述多根铜线与第一热熔胶膜片和第二热熔胶膜片分别热压结合。具体地,参阅图2和图3,将铜线10、第一热熔胶膜片21a和第二热熔胶膜22a分别输送到热压装置2之后,热压装置2将铜线10、第一热熔胶膜片21a和第二热熔胶膜22a热压结合,形成焊带,图3为热压结合得到的无主栅焊带的结构示意图,图中虚线的部分表示第一热熔胶膜片21a位于铜线10的上方。S103. The plurality of copper wires are respectively thermocompression bonded to the first hot melt adhesive film and the second hot melt adhesive film by a hot pressing device. Specifically, referring to FIG. 2 and FIG. 3, after the copper wire 10, the first hot melt adhesive film 21a and the second hot melt adhesive film 22a are respectively transported to the hot pressing device 2, the hot pressing device 2 will be the copper wire 10, the first A hot melt adhesive film 21a and a second hot melt adhesive film 22a are thermocompression bonded to form a solder ribbon, and FIG. 3 is a schematic structural view of the main gateless solder ribbon obtained by thermocompression bonding, and the dotted line portion of the figure indicates the first hot melt. The film 21a is located above the copper wire 10.
S104、由收卷机构对与第一热熔胶膜片和第二热熔胶膜片热压结合后的所述多根铜线作收卷动作。具体地,参阅图2和图3,在步骤S103热压结合得到的无主栅焊带之后,由收卷机构6作收卷动作回收成品。S104: The winding mechanism rotates the plurality of copper wires that are combined with the first hot melt adhesive film and the second hot melt adhesive film. Specifically, referring to FIG. 2 and FIG. 3, after the non-main gate strip obtained by thermocompression bonding in step S103, the winding mechanism 6 performs a winding operation to recover the finished product.
其中,在步骤S102,所述第一放卷机构3a和第二放卷机构3b分别采用线速度恒定的方式放出第一热熔胶膜21和第二热熔胶膜22。所述第一放卷机构3a放出第一热熔胶膜21的线速度范围可以是5~10m/min,所述第二放卷机构3b放出第二热熔胶膜22的线速度范围可以是5~10m/min。较佳的是,所述第一放卷机构3a和所述第二放卷机构3b的线速度相同。Wherein, in step S102, the first unwinding mechanism 3a and the second unwinding mechanism 3b release the first hot melt adhesive film 21 and the second hot melt adhesive film 22 by using a constant linear velocity. The linear velocity of the first hot-melt adhesive film 21 may be 5 to 10 m/min, and the linear velocity range of the second unwinding mechanism 3b for discharging the second hot melt adhesive film 22 may be 5 ~ 10m / min. Preferably, the linear velocity of the first unwinding mechanism 3a and the second unwinding mechanism 3b are the same.
其中,参阅图2,所述第一热熔胶膜片21a和第二热熔胶膜片22a在输送方向上的间隔距离d2可以为2~3mm。如图3所示,热压结合得到的无主栅焊带中,第一热熔胶膜片21a和第二热熔胶膜片22a之间具有间隔距离d2,在使用时方便对焊带进行裁剪。Referring to FIG. 2, the distance d2 between the first hot melt adhesive film 21a and the second hot melt adhesive film 22a in the transport direction may be 2 to 3 mm. As shown in FIG. 3, in the non-main gate strip obtained by thermocompression bonding, the first hot melt adhesive film 21a and the second hot melt adhesive film 22a have a separation distance d2, which facilitates the use of the solder ribbon during use. Cropped.
其中,本实施例中所使用的铜线10为镀锡铜线,线径可以为0.2~0.3mm。所 述第一热熔胶膜21和第二热熔胶膜22分别为PO(polyolefin,聚烯烃)胶膜,所述第一热熔胶膜21和第二热熔胶膜22的厚度分别为0.09~0.11mm。The copper wire 10 used in the embodiment is a tinned copper wire, and the wire diameter may be 0.2 to 0.3 mm. Place The first hot melt adhesive film 21 and the second hot melt adhesive film 22 are respectively PO (polyolefin) adhesive films, and the first hot melt adhesive film 21 and the second hot melt adhesive film 22 have a thickness of 0.09, respectively. ~0.11mm.
在本实施例中,参阅图3,第一热熔胶膜21的宽度为D1,第一热熔胶膜21被第一切割装置4a切割形成多个第一热熔胶膜片21a后,第一热熔胶膜片21a的宽度也为D1,长度为L1。第二热熔胶膜22的宽度为D2,第二热熔胶膜22被第二切割装置4b切割形成多个第二热熔胶膜片22a后,第二热熔胶膜片22a后的宽度也为D2,长度为L2。通常地D1=D2,并且设定L1=D1,L2=D2。In this embodiment, referring to FIG. 3, the width of the first hot melt adhesive film 21 is D1, and after the first hot melt adhesive film 21 is cut by the first cutting device 4a to form a plurality of first hot melt adhesive film sheets 21a, A hot melt adhesive film 21a has a width D1 and a length L1. The width of the second hot melt adhesive film 22 is D2, and the width of the second hot melt adhesive film 22 after the second hot melt adhesive film 22 is cut by the second cutting device 4b to form the second hot melt adhesive film 22a. Also D2, the length is L2. Usually D1 = D2, and L1 = D1, L2 = D2 is set.
本发明实施例提供的一种用于太阳能电池的无主栅焊带的制备方法,该制备方法以铜线和热熔胶膜为材料,通过热压工艺制备获得无主栅焊带,应用于无主栅的太阳能电池中,既能满足遮光少同时又能满足导电的要求;其制备方法的工艺过程简单,满足降低材料成本的技术问题,也简化了太阳能电池生产流程中同时在硅片表面实现高光伏效率电池结构和高导电率低遮光电极结构的复杂工艺。进一步地,在该方法的工艺中,设置第一热熔胶膜片和第二热熔胶膜片位于铜线的两侧,呈交错设置,相较于将胶膜放置在单侧,可以有效避免铜线断线,提供工作效率,降低成本。The invention provides a method for preparing a non-main gate strip for a solar cell, which is prepared by using a copper wire and a hot melt film as a material, and is obtained by a hot pressing process to obtain a main gateless strip. In the solar cell without main grid, it can meet the requirements of less shading while satisfying the conductivity; the preparation process is simple, meets the technical problem of reducing the material cost, and simplifies the surface of the silicon wafer in the solar cell production process. A complex process that achieves a high photovoltaic efficiency cell structure and a high conductivity low light-shielded electrode structure. Further, in the process of the method, the first hot melt adhesive film and the second hot melt adhesive film are disposed on both sides of the copper wire, and are arranged in a staggered manner, which is effective compared to placing the adhesive film on one side. Avoid copper wire breaks, provide work efficiency and reduce costs.
需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。It should be noted that, in this context, relational terms such as first and second are used merely to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply such entities or operations. There is any such actual relationship or order between them. Furthermore, the term "comprises" or "comprises" or "comprises" or any other variations thereof is intended to encompass a non-exclusive inclusion, such that a process, method, article, or device that comprises a plurality of elements includes not only those elements but also Other elements, or elements that are inherent to such a process, method, item, or device. An element that is defined by the phrase "comprising a ..." does not exclude the presence of additional equivalent elements in the process, method, item, or device that comprises the element.
以上所述仅是本申请的具体实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本申请原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本申请的保护范围。 The above description is only a specific embodiment of the present application, and it should be noted that those skilled in the art can also make several improvements and retouchings without departing from the principles of the present application. It should be considered as the scope of protection of this application.

Claims (10)

  1. 一种用于太阳能电池的无主栅焊带的制备方法,其中,该方法包括:A method for preparing a non-main gate solder ribbon for a solar cell, wherein the method comprises:
    由铜线放线架放出多根铜线输送到热压装置中,所述多根铜线位于同一水平面内且相互平行排布;A plurality of copper wires are discharged from the copper wire take-up frame and sent to the hot pressing device, wherein the plurality of copper wires are located in the same horizontal plane and arranged in parallel with each other;
    由第一放卷机构和第二放卷机构分别放出第一热熔胶膜和第二热熔胶膜,所述第一热熔胶膜被第一切割装置切割形成多个第一热熔胶膜片,所述第二热熔胶膜被第二切割装置切割形成多个第二热熔胶膜片;其中,所述第一热熔胶膜片和第二热熔胶膜片分别由第一传送装置和第二传送装置依次相互交替地输送到热压装置中,所述第一热熔胶膜片位于所述多根铜线的上方,所述第二热熔胶膜片位于所述多根铜线的下方,并且,所述第一热熔胶膜片和第二热熔胶膜片在输送方向上具有一间隔距离;Disposing a first hot melt adhesive film and a second hot melt adhesive film respectively by the first unwinding mechanism and the second unwinding mechanism, the first hot melt adhesive film being cut by the first cutting device to form a plurality of first hot melt adhesives a second hot melt adhesive film is cut by the second cutting device to form a plurality of second hot melt adhesive film; wherein the first hot melt adhesive film and the second hot melt adhesive film are respectively a conveying device and a second conveying device are sequentially alternately conveyed to the hot pressing device, the first hot melt adhesive film is located above the plurality of copper wires, and the second hot melt adhesive film is located at the a plurality of copper wires below, and the first hot melt adhesive film and the second hot melt adhesive film have a separation distance in the conveying direction;
    由热压装置将所述多根铜线与所述第一热熔胶膜片和第二热熔胶膜片分别热压结合;The plurality of copper wires are respectively thermocompression bonded to the first hot melt adhesive film and the second hot melt adhesive film by a hot pressing device;
    由收卷机构对与第一热熔胶膜片和第二热熔胶膜片热压结合后的所述多根铜线作收卷动作。The plurality of copper wires combined with the first hot melt adhesive film and the second hot melt adhesive film are combined and wound by the winding mechanism.
  2. 根据权利要求1所述的用于太阳能电池的无主栅焊带的制备方法,其中,所述多根铜线呈等间距相互平行排布,相邻两根铜线之间的间距为6~10mm。The method for fabricating a non-main gate strip for a solar cell according to claim 1, wherein the plurality of copper wires are arranged in parallel at equal intervals, and a spacing between adjacent two copper wires is 6 to 10mm.
  3. 根据权利要求2所述的用于太阳能电池的无主栅焊带的制备方法,其中,每一所述铜线的放线张力由所述铜线放线架单独调节,放线张力的范围是The method for preparing a non-main gate solder ribbon for a solar cell according to claim 2, wherein a pay-off tension of each of said copper wires is individually adjusted by said copper wire pay-off frame, and a range of wire tension is
    5~50N。5 to 50N.
  4. 根据权利要求1所述的用于太阳能电池的无主栅焊带的制备方法,其中,所述第一放卷机构和第二放卷机构分别采用线速度恒定的方式放出第一热熔胶膜和第二热熔胶膜。The method of manufacturing a non-main gate strip for a solar cell according to claim 1, wherein the first unwinding mechanism and the second unwinding mechanism respectively discharge the first hot melt film in a manner of constant linear velocity And a second hot melt adhesive film.
  5. 根据权利要求4所述的用于太阳能电池的无主栅焊带的制备方法,其中,所述第一放卷机构放出第一热熔胶膜的线速度范围是5~10m/min,所述第二放卷机构放出第二热熔胶膜的线速度范围是5~10m/min。The method for preparing a non-main gate strip for a solar cell according to claim 4, wherein the first unwinding mechanism discharges the first hot melt film at a linear velocity of 5 to 10 m/min, The second unwinding mechanism releases the second hot melt adhesive film at a linear velocity ranging from 5 to 10 m/min.
  6. 根据权利要求5所述的用于太阳能电池的无主栅焊带的制备方法,其中,所述第一放卷机构和所述第二放卷机构的线速度相同。 The method of manufacturing a non-main gate strip for a solar cell according to claim 5, wherein the first unwinding mechanism and the second unwinding mechanism have the same linear velocity.
  7. 根据权利要求1所述的用于太阳能电池的无主栅焊带的制备方法,其中,所述第一热熔胶膜片和第二热熔胶膜片在输送方向上的间隔距离为2~3mm。The method for preparing a non-main gate strip for a solar cell according to claim 1, wherein a distance between the first hot melt adhesive film and the second hot melt adhesive film in the transport direction is 2 to 3mm.
  8. 根据权利要求7所述的用于太阳能电池的无主栅焊带的制备方法,其中,所述铜线为镀锡铜线,所述第一热熔胶膜和第二热熔胶膜分别为PO胶膜。The method for preparing a non-main gate solder ribbon for a solar cell according to claim 7, wherein the copper wire is a tinned copper wire, and the first hot melt adhesive film and the second hot melt adhesive film are respectively PO film.
  9. 根据权利要求7所述的用于太阳能电池的无主栅焊带的制备方法,其中,所述铜线的线径为0.2~0.3mm,所述第一热熔胶膜和第二热熔胶膜的厚度分别为0.09~0.11mm。The method for preparing a non-main gate strip for a solar cell according to claim 7, wherein the copper wire has a wire diameter of 0.2 to 0.3 mm, and the first hot melt adhesive film and the second hot melt adhesive The thickness of the film was 0.09 to 0.11 mm, respectively.
  10. 根据权利要求7所述的用于太阳能电池的无主栅焊带的制备方法,其中,所述第一热熔胶膜片的长度和宽度相同,所述第二热熔胶膜片的长度和宽度相同。 The method of manufacturing a non-main gate strip for a solar cell according to claim 7, wherein the first hot melt adhesive film has the same length and width, and the length of the second hot melt adhesive film is The width is the same.
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