WO2017082467A1 - Procédé de fabrication d'ensemble de microlentilles - Google Patents

Procédé de fabrication d'ensemble de microlentilles Download PDF

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Publication number
WO2017082467A1
WO2017082467A1 PCT/KR2015/014456 KR2015014456W WO2017082467A1 WO 2017082467 A1 WO2017082467 A1 WO 2017082467A1 KR 2015014456 W KR2015014456 W KR 2015014456W WO 2017082467 A1 WO2017082467 A1 WO 2017082467A1
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WO
WIPO (PCT)
Prior art keywords
thin film
photoresist layer
photoresist
lens array
micro lens
Prior art date
Application number
PCT/KR2015/014456
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English (en)
Korean (ko)
Inventor
원용협
김준오
Original Assignee
한국과학기술원
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Application filed by 한국과학기술원 filed Critical 한국과학기술원
Publication of WO2017082467A1 publication Critical patent/WO2017082467A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to a method of manufacturing a micro lens array.
  • Microlens arrays are fundamentally required in fine optical applications such as optical communication, interconnection, direct optical imaging, lab-on-a-chip, and the like.
  • this method has a disadvantage in that the cost of the processing itself is expensive and the cost of manufacturing a new mold can be burdensome if the characteristics of the micro lens array to be used are different.
  • a cylindrical photoresist is formed on a substrate using lithography in a conventional semiconductor process, and the photoresist is liquefied by applying a high temperature to form a spherical shape on the substrate using the surface tension of the photoresist. It is a method of forming. Subsequently, lowering the temperature and applying UV light causes the photoresist to harden, creating a microlens array.
  • microlens array made in this manner is limited to fabricating only a microlens array having a short focal length due to the characteristics of the surface tension.
  • the focal length of the lens is determined by the contact angle due to the tension of the contact surface with the substrate, and it is rare that the photoresist usually has a very small ( ⁇ 10 degree) contact angle. It can be used only for applications that require a short focal length. In other words, it is not a suitable method for making an imaging lens, which is an application that should have a relatively long focal length.
  • the coupling between the two lenses may occur at some point, which may render the entire micro lens array unusable. Therefore, the gap between the lenses should be spaced to some extent, which is why fill factor is lower than other methods.
  • the photoresist reflow method should always be performed in a low dust concentration.
  • a method of manufacturing a domed shape by radially exposing ultraviolet light and stopping the photoresist phenomenon in the middle has been proposed, such as a method of using a mold, a method of making a lens by applying an electric field from a conductive liquid polymer, but a more effective method for manufacturing a micro lens array is required.
  • the technical problem to be achieved by the present invention is to provide a method for manufacturing a micro lens array which can have a long ultra-short distance and also improves the filling rate.
  • the thickness control of the photoresist sheet layer is performed by spin coating, and the soft baking is further performed after the spin coating.
  • the thin film is characterized in that formed by the entire exposure to the upper portion of the photoresist layer.
  • the thickness of the thin film is controlled according to the focal length of the micro lens.
  • post-exposure baking of the thin film may be further performed.
  • the step of allowing the thin film is raised, the step of immersing the substrate, the photoresist layer and the thin film in an ultrasonic generator containing a developer; And applying vibration to the substrate, the photoresist layer and the thin film using the ultrasonic wave generator.
  • the microlens array is formed by floating the mold of the thin film after the front surface exposure is performed by nickel electroplating or polydimethylsiloxane (PDMS).
  • PDMS polydimethylsiloxane
  • the photoresist is characterized in that the ultraviolet photosensitizer polymer or SU-8.
  • the thickness of the photoresist layer is 200 to 300um
  • the thickness of the thin film is characterized in that 25 to 40um.
  • the microlens array can be made as the mask pattern, a complicated calculation process can be omitted.
  • the focal length can be adjusted by the thickness of the thin film, a lens having a considerably long focal length can be manufactured.
  • FIG. 1 is a perspective view of a micro lens array according to an embodiment of the present invention.
  • FIG. 2 is a plan view of the micro lens array shown in FIG. 1.
  • FIG 3 is a view showing a state in which a photoresist is applied on a substrate to manufacture a micro lens array according to an embodiment of the present invention.
  • FIG. 4 is a diagram illustrating a state after the photoresist layer in FIG. 3 is exposed through a mask.
  • FIG. 5 is a view showing a state after forming a thin film on the photoresist layer in FIG.
  • FIG. 6 is a view showing a state after development of the photoresist layer in FIG. 5.
  • FIG. 7 illustrates a completed microlens array after exposure to the raised thin film of FIG. 6.
  • FIG. 1 is a perspective view of a micro lens array according to an exemplary embodiment of the present invention
  • FIG. 2 is a plan view of the micro lens array shown in FIG. 1.
  • a micro lens array 10 may include a substrate 100 on a rectangular plate, a photoresist film 110 formed on the substrate 100, and a photo. A plurality of micro lenses 120 formed on the resist film 110 is included.
  • the substrate 100 is a substrate of a transparent material, for example, a glass substrate may be used.
  • the shape of the substrate 100 may be manufactured in a form other than a square, for example, circular, depending on the use.
  • FIG 3 is a view showing a state in which a photoresist is applied on a substrate to manufacture a micro lens array according to an embodiment of the present invention.
  • the photoresist layer 111 is formed by applying a photoresist on the glass substrate 100 in the same procedure as a lithography method in a general semiconductor process (S100).
  • SU-8 which is a negative photosensitive agent
  • the photoresist may be used as the photoresist, and the negative photosensitive agent is an ultraviolet photosensitive polymer.
  • the photoresist layer may be adjusted in thickness through spin coating. For example, 500 rpm 5 seconds, ramping rate (ramping rate) to 300rpm / s to increase to 2000rpm and spin coating for 20 seconds at 2000rpm.
  • Such a condition is a condition of applying the photoresist layer 111 to a thickness of 200 ⁇ m on the glass substrate 100.
  • the photoresist layer according to the embodiment of the present invention may have a thickness of 200 to 300um.
  • a soft baking process may be further performed. Such a soft firing process may be performed by heating the ramping temperature to 95 degrees at 5 degrees at 65 degrees and 95 degrees at 3 degrees / min, and then heating at 95 degrees for 1 hour.
  • the solvent (Solvent) included in the photoresist layer 111 is vaporized and becomes a condition for curing the photoresist layer.
  • FIG. 4 is a diagram illustrating a state after the photoresist layer 111 of FIG. 3 is exposed through a mask.
  • a mask 200 having an opening surface is formed in order to allow ultraviolet light to pass in the shape of a desired microlens 120.
  • the exposure is performed for 40 seconds (S110).
  • the photoresist layer 111 is composed of the photoresist 112 and the exposed photoresist 113 that is not exposed by the mask 200.
  • the mask 200 has the same shape as the circular cross section in which the microlens 120 as shown in FIG. 2 contacts the photoresist layer 111.
  • FIG. 5 is a diagram illustrating a state after forming a thin film on the photoresist layer 111 in FIG. 3.
  • the mask 200 is removed and the entire area is exposed for 5 seconds to form an upper portion of the photoresist layer 111 as the thin film 130 (S120).
  • the thin film 130 is formed to prevent the photoresist from melting away during the later development process.
  • the thickness of the thin film 130 is determined according to the time for exposing the entire surface of the photoresist layer 111.
  • the thickness of the thin film 130 becomes an element capable of adjusting the focal length of the microlens 120.
  • the thin film 130 according to the embodiment of the present invention may have a thickness of 25 to 40um.
  • a post exposure baking process may be performed at 95 degrees for 15 minutes. This post-exposure bake is performed to further promote crosslinking of the crosslinkable moieties in the exposed portions of the photoresist.
  • FIG. 6 is a diagram illustrating a state after development of the photoresist layer 111 in FIG. 5.
  • an ultrasonic generator after immersing all of the substrate 100, the photoresist layer 111, and the thin film 130 in a developing solution is used. Give a vibration of 5 minutes using (S130).
  • S130 instead of the photoresist melting as molecules of the developer penetrate between defects of the thin film 130 due to the vibration of the ultrasonic wave generator, a mixture of the photoresist and the developer is combined in the thin film 130 and illustrated in FIG. 6. As described above, the thin film is in a raised state.
  • the developer is contained in the ultrasonic generator, and after the substrate 100, the photoresist layer 111 and the thin film 130 are all immersed in the developer may be used a method of giving a vibration using the ultrasonic generator. .
  • FIG. 7 illustrates a completed microlens array after exposure to the raised thin film 130 in FIG. 6.
  • a micro lens array 10 having a lens shape is formed (S140). That is, the photoresist film 110 is formed on the substrate 100, the microlens 120 is formed thereon, and finally the microlens array 10 is formed.
  • the micro lens array 10 generated through the above-described process may be used as a lens, but because the cured photoresist is less transparent than PC (poly carbonate) or PMMA (Poly methyl methacrylate)
  • This form may be formed by nickel electroplating or polydimethylsiloxane (PDMS) to form the final microlens array 10 by reforming with PC or PMMA.
  • the ultraviolet light applied to the photoresist is light of a wavelength range of 365 to 400nm having an intensity of 5 ⁇ 8mJ / s * cm 2 .

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Ophthalmology & Optometry (AREA)
  • Mechanical Engineering (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)

Abstract

La présente invention concerne un procédé de fabrication d'un ensemble de microlentilles. Dans le procédé, dans un premier temps, une résine photosensible est appliquée sur un substrat pour former une couche de résine photosensible. Ensuite, une partie de la couche de résine photosensible est exposée au moyen d'un masque, et une couche mince formée sur la couche de résine photosensible. Ensuite, la couche de résine photosensible sur laquelle le film mince est formé est développée et simultanément, une vibration ultrasonore est appliquée pour amener le film mince à s'élever. Ensuite, le film mince élevé est soumis à une exposition de surface totale pour former un ensemble de microlentilles.
PCT/KR2015/014456 2014-11-26 2015-12-30 Procédé de fabrication d'ensemble de microlentilles WO2017082467A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20140166780 2014-11-26
KR10-2015-0158816 2015-11-12
KR1020150158816A KR101839461B1 (ko) 2014-11-26 2015-11-12 마이크로 렌즈 어레이 제조 방법

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WO2017082467A1 true WO2017082467A1 (fr) 2017-05-18

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KR102048746B1 (ko) 2017-11-24 2019-11-26 한국기계연구원 마이크로 렌즈 어레이 몰드 제조방법
CN110187417B (zh) * 2019-06-27 2020-08-25 电子科技大学 Pdms薄膜微透镜阵列的制作方法
KR102427976B1 (ko) * 2020-02-28 2022-08-03 (주)펨트론 다초점 마이크로렌즈 및 이의 제조방법
CN114913559B (zh) * 2021-02-08 2024-06-21 苏州苏大维格科技集团股份有限公司 微透镜阵列成像组件的生产装置及制备方法
KR102556140B1 (ko) * 2021-02-22 2023-07-19 한국과학기술원 동시 열적 리플로우 기반 마이크로 렌즈 및 이의 제작 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005242109A (ja) * 2004-02-27 2005-09-08 Fuji Photo Film Co Ltd マイクロレンズの作製方法および装置並びにマイクロレンズ
US20070105056A1 (en) * 2005-11-08 2007-05-10 Sharp Laboratories Of America, Inc. Method of forming a microlens array having a high fill factor
CN102540284A (zh) * 2012-02-07 2012-07-04 中国科学院光电技术研究所 基于负性光刻胶和掩膜移动曝光工艺的微透镜阵列制备方法
KR101173155B1 (ko) * 2010-11-03 2012-08-16 오에프티 주식회사 마이크로렌즈 어레이의 제조 방법
KR101528594B1 (ko) * 2013-09-26 2015-06-12 한국과학기술원 대면적 나노렌즈 및 이의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005242109A (ja) * 2004-02-27 2005-09-08 Fuji Photo Film Co Ltd マイクロレンズの作製方法および装置並びにマイクロレンズ
US20070105056A1 (en) * 2005-11-08 2007-05-10 Sharp Laboratories Of America, Inc. Method of forming a microlens array having a high fill factor
KR101173155B1 (ko) * 2010-11-03 2012-08-16 오에프티 주식회사 마이크로렌즈 어레이의 제조 방법
CN102540284A (zh) * 2012-02-07 2012-07-04 中国科学院光电技术研究所 基于负性光刻胶和掩膜移动曝光工艺的微透镜阵列制备方法
KR101528594B1 (ko) * 2013-09-26 2015-06-12 한국과학기술원 대면적 나노렌즈 및 이의 제조 방법

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KR20160063242A (ko) 2016-06-03

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