WO2017071950A1 - Système et procédé pour surveiller un canal, notamment un canal mems - Google Patents

Système et procédé pour surveiller un canal, notamment un canal mems Download PDF

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Publication number
WO2017071950A1
WO2017071950A1 PCT/EP2016/074432 EP2016074432W WO2017071950A1 WO 2017071950 A1 WO2017071950 A1 WO 2017071950A1 EP 2016074432 W EP2016074432 W EP 2016074432W WO 2017071950 A1 WO2017071950 A1 WO 2017071950A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
channel
channel wall
wall
electrical quantity
Prior art date
Application number
PCT/EP2016/074432
Other languages
German (de)
English (en)
Inventor
Thomas Budmiger
Hagen FETH
Raphael KUHNEN
Patrick REITH
Mike Touzin
Pavo Vrdoljak
Original Assignee
Truedyne Sensors AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Truedyne Sensors AG filed Critical Truedyne Sensors AG
Publication of WO2017071950A1 publication Critical patent/WO2017071950A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B13/00—Measuring arrangements characterised by the use of fluids
    • G01B13/22—Measuring arrangements characterised by the use of fluids for measuring roughness or irregularity of surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
    • B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
    • B01L3/502715—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by interfacing components, e.g. fluidic, electrical, optical or mechanical interfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0035—Testing
    • B81C99/0045—End test of the packaged device
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B13/00—Measuring arrangements characterised by the use of fluids
    • G01B13/02—Measuring arrangements characterised by the use of fluids for measuring length, width or thickness
    • G01B13/06—Measuring arrangements characterised by the use of fluids for measuring length, width or thickness for measuring thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G01B7/08—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using capacitive means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
    • G01F25/10—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/20—Investigating the presence of flaws
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G01N27/24—Investigating the presence of flaws
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/06—Auxiliary integrated devices, integrated components
    • B01L2300/0627—Sensor or part of a sensor is integrated
    • B01L2300/0645—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2400/00—Moving or stopping fluids
    • B01L2400/04—Moving fluids with specific forces or mechanical means
    • B01L2400/0403—Moving fluids with specific forces or mechanical means specific forces
    • B01L2400/0415—Moving fluids with specific forces or mechanical means specific forces electrical forces, e.g. electrokinetic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/05—Microfluidics
    • B81B2201/058—Microfluidics not provided for in B81B2201/051 - B81B2201/054
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0035—Testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/76—Devices for measuring mass flow of a fluid or a fluent solid material
    • G01F1/78—Direct mass flowmeters
    • G01F1/80—Direct mass flowmeters operating by measuring pressure, force, momentum, or frequency of a fluid flow to which a rotational movement has been imparted
    • G01F1/84—Coriolis or gyroscopic mass flowmeters

Definitions

  • a system for monitoring a channel at least comprising: the channel, which is surrounded on all sides by a channel wall, wherein the
  • MEMS sensors can also be used in fluids that can lead to material removal or material deposits. Examples of MEMS sensors in which such a channel is used are mentioned in the introductory part of the description.
  • At least two further electrodes are attached to the channel wall in a region of the channel in which the channel is not flowed through by fluids. Between these two electrodes the same electrical variable, ie a resistance value or a capacitance value, is determined, as between the first electrode and the second electrode.
  • the further electrodes are each arranged analogously to the first electrode and the second electrode, depending on whether a resistance value or a capacitance value is determined. This further electrical quantity is determined each time the electrical quantity between the first electrode and the second electrode is measured, and serves as
  • a resistance value of the channel wall between the first electrode and the second electrode is measured as the electrical variable.
  • FIG. 1 shows an embodiment of the method according to the invention for monitoring a Channels, in particular a MEMS channel, based on measuring a
  • Element semiconductor material such as silicon or germanium, a
  • the channel 1 with its channel wall 2 is applied to a substrate S, glass in this example. Electrodes not shown here, which are applied to the substrate, generate a vibration of the channel 1 by applying a voltage. Certain fluids used for the measurement can chemically react with the channel wall 2 and lead to a removal A of the material of the channel wall 2 , Likewise, parts of the fluid can deposit on the channel wall 2. In both cases the oscillation properties of channel 1 change, which invalidates the calibration of channel 1 and falsifies the measurement results.
  • a first electrode 3 and a second electrode 4 are mounted on an outer side 5 of the channel wall 2.
  • Fig. 2 is a further embodiment of the system according to the invention.
  • the first electrode 3 is mounted on an outer side 5 of the channel wall 2.
  • the second electrode 4 is formed by an opposite region 6 of the channel wall 2, which has a doping and thereby can act as an electrode.
  • the arithmetic unit calculates a reference value and compares capacitance values measured at later times with the reference value to a change in the reference value
  • Fig. 3 shows a schematic drawing of the system according to the invention.
  • the first electrode 3 and the second electrode 4 are respectively attached to the outside 5 of the channel wall 2 of the channel 1.
  • the arithmetic unit 7 measures a resistance value of the section of the channel wall 2 which lies between the two electrodes and compares this with a previously recorded reference value and determines a change in the channel thickness d of the channel wall 2 based on the comparison.
  • a circuit 8 may be arranged, which generates an electrical voltage, which is required for the measurement, and measures the resistance value.
  • this circuit 8 can already be implemented in the arithmetic unit 7.
  • Method according to the invention is not restricted to the above-mentioned exemplary embodiments and is applicable to any channel in a channel 1, in particular a MEMS channel 1.

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • Electrochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Hematology (AREA)
  • Clinical Laboratory Science (AREA)
  • Fluid Mechanics (AREA)
  • Dispersion Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Micromachines (AREA)

Abstract

La présente invention concerne un système et un procédé pour surveiller un canal (1), notamment un canal MEMS (1), au moyen d'un système conforme à au moins l'une des revendications 1 à 8, le procédé comprenant au moins les étapes suivantes consistant : à mesurer une grandeur électrique au moyen d'une première électrode (3) et d'une seconde électrode (4) qui mettent en contact électrique une paroi de canal (2), la paroi de canal (2) entourant le canal (1) de tous côtés, et la paroi de canal (2) présentant une épaisseur de paroi (d) ; à comparer la grandeur électrique à une valeur de référence prédéterminée ; et à déterminer une variation de l'épaisseur de paroi (d) de la paroi de canal (2) selon le résultat de la comparaison de la grandeur électrique avec la valeur de référence prédéterminée.
PCT/EP2016/074432 2015-10-26 2016-10-12 Système et procédé pour surveiller un canal, notamment un canal mems WO2017071950A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015118232.7A DE102015118232B4 (de) 2015-10-26 2015-10-26 System und Verfahren zum Überwachen eines Kanals, insbesondere eines MEMS-Kanals
DE102015118232.7 2015-10-26

Publications (1)

Publication Number Publication Date
WO2017071950A1 true WO2017071950A1 (fr) 2017-05-04

Family

ID=57199961

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2016/074432 WO2017071950A1 (fr) 2015-10-26 2016-10-12 Système et procédé pour surveiller un canal, notamment un canal mems

Country Status (2)

Country Link
DE (1) DE102015118232B4 (fr)
WO (1) WO2017071950A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020128010A1 (de) * 2020-10-23 2022-04-28 Lufthansa Technik Aktiengesellschaft System und Verfahren zur Diagnose eines Vakuumabsaugsystems

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4870342A (en) * 1988-10-05 1989-09-26 Emhart Industries, Inc. Glass container wall thickness inspecting machine
US20020194908A1 (en) 2001-06-20 2002-12-26 Integrated Sensing Systems, Inc. Integrated microtube sensing device
US20050075800A1 (en) * 2003-09-17 2005-04-07 Thomas Batzinger System and method for monitoring defects in structures
US20100037706A1 (en) 2008-02-11 2010-02-18 Integrated Sensing Systems, Inc. Microfluidic device and methods of operation and making
DE102008039045A1 (de) 2008-08-21 2010-02-25 Endress + Hauser Flowtec Ag Sensor in mikromechanischer Bauweise
DE102010029645A1 (de) * 2010-06-02 2011-12-08 Robert Bosch Gmbh Mikromechanisches Bauelement mit einer Teststruktur zur Bestimmung der Schichtdicke einer Abstandsschicht und Verfahren zum Herstellen einer solchen Teststruktur
EP2889574A1 (fr) * 2012-09-28 2015-07-01 Nihon Yamamura Glass Co., Ltd. Dispositif d'inspection d'épaisseur

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX2008012103A (es) * 2006-03-24 2008-12-17 Univ Utah Res Found Medicion del espesor de peliculas dielectricas en superficies.
DE102015110711A1 (de) 2015-07-02 2017-01-05 Endress+Hauser Flowtec Ag MEMS Sensor zu Messung mindestens einer Messgröße eines strömenden Fluids

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4870342A (en) * 1988-10-05 1989-09-26 Emhart Industries, Inc. Glass container wall thickness inspecting machine
US20020194908A1 (en) 2001-06-20 2002-12-26 Integrated Sensing Systems, Inc. Integrated microtube sensing device
US20050075800A1 (en) * 2003-09-17 2005-04-07 Thomas Batzinger System and method for monitoring defects in structures
US20100037706A1 (en) 2008-02-11 2010-02-18 Integrated Sensing Systems, Inc. Microfluidic device and methods of operation and making
DE102008039045A1 (de) 2008-08-21 2010-02-25 Endress + Hauser Flowtec Ag Sensor in mikromechanischer Bauweise
DE102010029645A1 (de) * 2010-06-02 2011-12-08 Robert Bosch Gmbh Mikromechanisches Bauelement mit einer Teststruktur zur Bestimmung der Schichtdicke einer Abstandsschicht und Verfahren zum Herstellen einer solchen Teststruktur
EP2889574A1 (fr) * 2012-09-28 2015-07-01 Nihon Yamamura Glass Co., Ltd. Dispositif d'inspection d'épaisseur

Also Published As

Publication number Publication date
DE102015118232B4 (de) 2023-09-14
DE102015118232A1 (de) 2017-04-27

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