WO2017069460A3 - Transistor à haute mobilité électronique et son procédé de fabrication - Google Patents

Transistor à haute mobilité électronique et son procédé de fabrication Download PDF

Info

Publication number
WO2017069460A3
WO2017069460A3 PCT/KR2016/011534 KR2016011534W WO2017069460A3 WO 2017069460 A3 WO2017069460 A3 WO 2017069460A3 KR 2016011534 W KR2016011534 W KR 2016011534W WO 2017069460 A3 WO2017069460 A3 WO 2017069460A3
Authority
WO
WIPO (PCT)
Prior art keywords
source electrode
base layer
electron mobility
high electron
mobility transistor
Prior art date
Application number
PCT/KR2016/011534
Other languages
English (en)
Korean (ko)
Other versions
WO2017069460A2 (fr
Inventor
이상민
정연국
구황섭
김현제
정희석
Original Assignee
(주)웨이비스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020160047549A external-priority patent/KR101856687B1/ko
Application filed by (주)웨이비스 filed Critical (주)웨이비스
Publication of WO2017069460A2 publication Critical patent/WO2017069460A2/fr
Publication of WO2017069460A3 publication Critical patent/WO2017069460A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

L'invention concerne un transistor à haute mobilité électronique et son procédé de fabrication. Le transistor à haute mobilité électronique selon un mode de réalisation de la présente invention comprend : un substrat dans lequel est définie une partie de formation de câblage d'électrode de source; une couche de base formée sur le substrat; une électrode de source formée sur la couche de base de la partie de formation de câblage d'électrode de source; une électrode de drain espacée de l'électrode de source et formée sur la couche de base; une électrode de grille formée sur la couche de base entre l'électrode de source et l'électrode de drain; et une pastille de trou d'interconnexion pour un câblage d'électrode de source, qui est formée par gravure de la couche de base de la partie de formation de câblage d'électrode de source et du substrat à une profondeur prédéfinie depuis la surface avant associée, puis par remplissage d'un conducteur en son sein.
PCT/KR2016/011534 2015-10-23 2016-10-14 Transistor à haute mobilité électronique et son procédé de fabrication WO2017069460A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20150147655 2015-10-23
KR10-2015-0147655 2015-10-23
KR1020160047549A KR101856687B1 (ko) 2015-10-23 2016-04-19 고전자이동도 트랜지스터 및 그의 제조방법
KR10-2016-0047549 2016-04-19

Publications (2)

Publication Number Publication Date
WO2017069460A2 WO2017069460A2 (fr) 2017-04-27
WO2017069460A3 true WO2017069460A3 (fr) 2017-08-31

Family

ID=58557660

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2016/011534 WO2017069460A2 (fr) 2015-10-23 2016-10-14 Transistor à haute mobilité électronique et son procédé de fabrication

Country Status (1)

Country Link
WO (1) WO2017069460A2 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11168104A (ja) * 1997-10-01 1999-06-22 Matsushita Electron Corp 電子装置及びその製造方法
US20060060895A1 (en) * 2004-09-17 2006-03-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US20070126026A1 (en) * 2005-12-01 2007-06-07 Hiroaki Ueno Semiconductor device
KR20130046249A (ko) * 2011-10-27 2013-05-07 삼성전자주식회사 전극구조체, 이를 포함하는 질화갈륨계 반도체소자 및 이들의 제조방법
KR20140011585A (ko) * 2012-07-17 2014-01-29 삼성전자주식회사 고전자 이동도 트랜지스터 및 그 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11168104A (ja) * 1997-10-01 1999-06-22 Matsushita Electron Corp 電子装置及びその製造方法
US20060060895A1 (en) * 2004-09-17 2006-03-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US20070126026A1 (en) * 2005-12-01 2007-06-07 Hiroaki Ueno Semiconductor device
KR20130046249A (ko) * 2011-10-27 2013-05-07 삼성전자주식회사 전극구조체, 이를 포함하는 질화갈륨계 반도체소자 및 이들의 제조방법
KR20140011585A (ko) * 2012-07-17 2014-01-29 삼성전자주식회사 고전자 이동도 트랜지스터 및 그 제조방법

Also Published As

Publication number Publication date
WO2017069460A2 (fr) 2017-04-27

Similar Documents

Publication Publication Date Title
EP2755237A3 (fr) Dispositif semi-conducteur à grille MOS dans une tranchée et méthode de fabrication
TW201614838A (en) Semiconductor device and methods for forming the same
SG10201805096YA (en) Semiconductor device and method for fabricating the same
TW201612962A (en) Methods of forming contact structures for semiconductor devices and the resulting devices
TW201614840A (en) Semiconductor device and method for fabricating the same
GB2549685A (en) Dual fin integration for electron and hole mobility enhancement
TW201613097A (en) Semiconductor device and method of fabricating non-planar circuit device
TW201614803A (en) Device having multiple transistors and method for fabricating the same
EP2963688A3 (fr) Dispositif semi-conducteur avec un canal vertical
MY188715A (en) Selective gate spacers for semiconductor devices
GB201301434D0 (en) Replacement-gate finfet structure and process
MY188298A (en) Multi-gate high electron mobility transistors and methods of fabrication
WO2014004012A3 (fr) Dispositifs tridimensionnels à haute tension ayant des séparateurs diélectriques
TW201614717A (en) Semiconductor device and method for fabricating the same
TW201612982A (en) Transverse double-diffusion metal oxide semiconductor transistor and manufacturing method thereof
TW201613094A (en) Structure of fin feature and method of making same
WO2013169776A3 (fr) Dispositif semi-conducteur à oxyde de métal complémentaire (cmos) et procédé
TW201614839A (en) Semiconductor structure and method for forming the same
EP2620981A3 (fr) Transistors et leur procédé de fabrication
TW201612958A (en) Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layers
JP2016532284A5 (fr)
SG10201804042RA (en) Semiconductor Memory Devices
EP3190610A3 (fr) Transistor à effet de champ à ailettes et son procédé de fabrication
TW201612985A (en) Semiconductor device structure and method for forming the same
TW200943436A (en) Method for fabricating semiconductor device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16857718

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16857718

Country of ref document: EP

Kind code of ref document: A2