WO2017059629A1 - 量子点彩膜的制备方法 - Google Patents

量子点彩膜的制备方法 Download PDF

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WO2017059629A1
WO2017059629A1 PCT/CN2015/098155 CN2015098155W WO2017059629A1 WO 2017059629 A1 WO2017059629 A1 WO 2017059629A1 CN 2015098155 W CN2015098155 W CN 2015098155W WO 2017059629 A1 WO2017059629 A1 WO 2017059629A1
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quantum dot
green
photoresist layer
red
transparent organic
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English (en)
French (fr)
Inventor
梁宇恒
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/902,583 priority Critical patent/US9804489B2/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/207—Filters comprising semiconducting materials
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/36—Micro- or nanomaterials

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for preparing a quantum dot color film.
  • Quantum Dots are usually spherical or spheroidal semiconductor nanoparticles composed of II-VI or III-V elements, and the particle size is generally between several nanometers and several tens of nanometers. Since the particle size of QDs is smaller or closer to the exciton Bohr radius of the corresponding bulk material, a quantum confinement effect is generated, and the energy level structure changes from quasi-continuous of the bulk material to discrete structure of the quantum dot material, resulting in special QDs. The performance of stimulated radiation.
  • the bandgap of the energy level increases, the energy required for the corresponding QDs to be stimulated, and the energy released by the QDs after returning to the ground state are correspondingly increased, which is manifested by the excitation and fluorescence spectra of QDs.
  • the "blue shift" phenomenon by controlling the size of the QDs, allows the luminescence spectrum to cover the entire visible region. For example, the size of cadmium selenide (CdSe) is reduced from 6.6 nm to 2.0 nm, and its emission wavelength is "blue shifted" from the red light region 635 nm to 460 nm in the blue light region.
  • the quantum dot material has the advantages of concentrated luminescence spectrum, high color purity, and easy adjustment of the luminescent color by the size, structure or composition of the quantum dot material, and the use of these advantages in the display device can effectively enhance the color of the display device. Domain and color reproduction capabilities.
  • the patent CN102944943A and the patent US20150002788A1 both propose a technical solution for replacing the color filter with a color dot pattern having a pattern structure for color display purposes, but the patents do not have a method for patterning a quantum dot layer. Be explained.
  • the red, green, and blue quantum dot materials are firstly mixed with red, green, and blue quantum dot photoresists, and then exposed and developed to form a photoconductor.
  • the quantum dot pattern but this method needs to mix the red, green, and blue quantum dots with the red, green, and blue quantum dot photoresists in advance, and requires three photolithography processes, which are cumbersome and at least At the same time, red and green quantum dot photoresists are developed, and quantum dot photoresists are difficult to develop.
  • quantum dot patterns can also be produced by transfer, screen printing, etc., but the resolution of the quantum dot pattern obtained by the transfer method is not high, the edges of the pattern are jagged, and the quantum dot layer and the substrate are Adhesive force needs to be improved; and the method of inkjet printing to form a patterned quantum dot layer is very demanding on inkjet printing equipment. There are still technical barriers to ensuring the stability and printing accuracy of inkjet ink droplets, and mass production is still not possible.
  • the object of the present invention is to provide a method for preparing a quantum dot color film, which can save a photolithography process, simplify the process, save cost, improve production efficiency, and reduce the development difficulty and cost of the quantum dot photoresist.
  • the present invention provides a method for preparing a quantum dot color film, comprising the following steps:
  • Step 1 Providing a substrate, the substrate includes a plurality of blue sub-pixel regions, a green sub-pixel region, and a red sub-pixel region; and coating a transparent organic photoresist material on the substrate to form a transparent organic photoresist layer ;
  • Step 2 patterning the transparent organic photoresist layer by a photolithography process, removing a portion of the transparent organic photoresist layer corresponding to the blue sub-pixel region to obtain a patterned transparent organic photoresist layer.
  • the patterned transparent organic photoresist layer is used as a blue sub-pixel portion of the quantum dot color film;
  • Step 3 performing hydrophobic treatment on the upper surface of the patterned transparent organic photoresist layer
  • Step 4 coating a green quantum dot curing gel on the substrate, the green quantum dot curing adhesive is not attached to the patterned transparent organic photoresist layer, and is filled in the patterned transparent organic photoresist layer and a green quantum dot cured adhesive layer is obtained in the groove formed by the substrate, and the green quantum dot cured adhesive layer corresponds to the green sub-pixel region and the red sub-pixel region;
  • Step 5 coating a red quantum dot photoresist on the substrate, the red quantum dot photoresist is not attached to the transparent organic photoresist layer, and is filled in the patterned transparent organic photoresist layer and the a red quantum dot photoresist layer is obtained in the recess formed by the green quantum dot cured adhesive layer, and the red quantum dot photoresist layer corresponds to the green sub-pixel region and the red sub-pixel region;
  • Step 6 Perform a patterning process on the red quantum dot photoresist layer by a photolithography process, remove a portion of the red quantum dot photoresist layer corresponding to the green sub-pixel region, and expose a green quantum dot cured adhesive layer under the red quantum dot layer.
  • a portion of the glue layer corresponding to the red sub-pixel region and a patterned red quantum dot photoresist layer thereon serve as a red sub-pixel portion of the quantum dot color film.
  • the step 1 further includes forming a black matrix on the substrate by a photolithography process before coating a layer of the transparent organic photoresist material.
  • the black matrix spaces the blue sub-pixel region, the green sub-pixel region, and the red sub-pixel region.
  • step 7 after the step 6, forming a green color resist layer on the surface of the exposed green quantum dot cured adhesive layer, forming a red layer on the surface of the patterned red quantum dot photoresist layer Color resist layer.
  • the thickness of the transparent organic photoresist layer formed in the step 1 is 0-20 ⁇ m.
  • the substrate provided in the step 1 is used to fabricate an array substrate in a liquid crystal display panel.
  • the substrate provided in the step 1 is used to fabricate a color filter substrate in a liquid crystal display panel.
  • the quantum dot color film is used in a display device whose backlight is blue light.
  • the green quantum dot curing gel comprises a curing colloid and a green quantum dot mixed in the curing colloid; the curing colloid is a thermosetting adhesive or an ultraviolet curing adhesive; in the step 4, using a thermal curing or an ultraviolet curing The way to cure.
  • the height of the patterned transparent organic photoresist layer after hydrophobic treatment on the upper surface is greater than the height of the green quantum dot cured adhesive layer and the patterned red quantum dot photoresist layer; the transparent organic photoresist layer is also used as A photoresist spacer in the liquid crystal display panel.
  • the invention also provides a preparation method of a quantum dot color film, comprising the following steps:
  • Step 1 Providing a substrate, the substrate includes a plurality of blue sub-pixel regions, a green sub-pixel region, and a red sub-pixel region; and coating a transparent organic photoresist material on the substrate to form a transparent organic photoresist layer ;
  • Step 2 patterning the transparent organic photoresist layer by a photolithography process, removing a portion of the transparent organic photoresist layer corresponding to the blue sub-pixel region to obtain a patterned transparent organic photoresist layer.
  • the patterned transparent organic photoresist layer is used as a blue sub-pixel portion of the quantum dot color film;
  • Step 3 performing hydrophobic treatment on the upper surface of the patterned transparent organic photoresist layer
  • Step 4 coating a green quantum dot curing gel on the substrate, the green quantum dot curing adhesive is not attached to the patterned transparent organic photoresist layer, and is filled in the patterned transparent organic photoresist layer and a green quantum dot cured adhesive layer is obtained in the groove formed by the substrate, and the green quantum dot cured adhesive layer corresponds to the green sub-pixel region and the red sub-pixel region;
  • Step 5 coating a red quantum dot photoresist on the substrate, the red quantum dot photoresist is not attached to the patterned transparent organic photoresist layer, and is filled in the patterned transparent organic photoresist a red quantum dot photoresist layer is obtained in a recess formed by the layer and the green quantum dot cured adhesive layer, wherein the red quantum dot photoresist layer corresponds to the green sub-pixel region and the red sub-pixel region;
  • Step 6 Perform a patterning process on the red quantum dot photoresist layer by a photolithography process, remove a portion of the red quantum dot photoresist layer corresponding to the green sub-pixel region, and expose a green quantum dot cured adhesive layer under the red quantum dot layer. Obtaining a patterned red quantum dot photoresist layer; wherein a portion of the green quantum dot cured adhesive layer corresponding to the green sub-pixel region is used as a green color of the quantum dot color film a sub-pixel portion, the portion of the green quantum dot cured adhesive layer corresponding to the red sub-pixel region and the patterned red quantum dot photoresist layer thereon as a red sub-pixel portion of the quantum dot color film;
  • step 1 further comprises: forming a black matrix on the substrate by a photolithography process before coating a layer of transparent organic photoresist material;
  • the black matrix spaces the blue sub-pixel region, the green sub-pixel region, and the red sub-pixel region;
  • step 7 after the step 6, forming a green color resist layer on the surface of the exposed green quantum dot cured adhesive layer, forming a red layer on the surface of the patterned red quantum dot photoresist layer Color resist layer
  • the thickness of the transparent organic photoresist layer formed in the step 1 is 0-20 ⁇ m;
  • the green quantum dot curable adhesive comprises a solidified colloid and a green quantum dot mixed in the solidified colloid;
  • the cured colloid is a thermosetting adhesive or a UV curable adhesive; in the step 4, using heat curing, or ultraviolet curing Curing is carried out in a solidified manner.
  • the present invention provides a method of preparing a quantum dot color film.
  • the transparent organic photoresist layer is subjected to hydrophobic treatment, and the green layer is sequentially subjected to hydrophobic properties.
  • the quantum dot curing gel and the red quantum dot photoresist are coated on the corresponding regions, and the green quantum dot curing adhesive layer and the red quantum dot photoresist layer thereon are sequentially obtained, and then some red quantum is formed by photolithography.
  • the photoresist layer is etched to obtain the green sub-pixel portion and the red sub-pixel portion of the quantum dot color film, and at least one photolithography process is reduced compared with the conventional quantum dot color film manufacturing method, which greatly simplifies the process.
  • the cost is reduced, the production efficiency is improved, and only a quantum dot photoresist needs to be developed, which reduces the difficulty and cost of development.
  • FIG. 1 is a schematic flow chart of a method for preparing a quantum dot color film of the present invention
  • FIG. 2 is a schematic view showing the first step of the method for preparing a quantum dot color film of the present invention
  • FIG. 3 is a schematic view showing the second step of the method for preparing a quantum dot color film of the present invention
  • FIG. 4 is a schematic view showing the step 3 of the method for preparing a quantum dot color film of the present invention
  • Figure 5 is a schematic view showing the step 4 of the method for preparing a quantum dot color film of the present invention
  • FIG. 6 is a schematic view showing the step 5 of the method for preparing a quantum dot color film of the present invention.
  • FIG. 7 is a schematic view showing the step 6 of the method for preparing a quantum dot color film of the present invention.
  • Fig. 8 is a schematic view showing the step 7 of the method for producing a quantum dot color film of the present invention.
  • the present invention provides a method for preparing a quantum dot color film, comprising the following steps:
  • a substrate 1 is provided.
  • the substrate 1 includes a plurality of blue sub-pixel regions, a green sub-pixel region, and a red sub-pixel region; and a transparent organic light is coated on the substrate 1 a resist material to form a transparent organic photoresist layer 2;
  • the step 1 further includes forming a black matrix 5 on the substrate 1 by a photolithography process before applying a transparent organic photoresist material; the black matrix 5 will be the blue sub-pixel region The green sub-pixel area and the red sub-pixel area are spaced apart.
  • the thickness of the transparent organic photoresist layer 2 formed in the step 1 is 0-20 ⁇ m.
  • Step 2 as shown in FIG. 3, the transparent organic photoresist layer 2 is patterned by a photolithography process, and a portion of the transparent organic photoresist layer 2 corresponding to the blue sub-pixel region is removed to obtain a pattern.
  • Step 3 as shown in FIG. 4, the upper surface of the remaining transparent organic photoresist layer 2' is subjected to a hydrophobic treatment, so that the contact angle of the green quantum dot curing gel and the red quantum dot photoresist used in the subsequent step is Decreasing and reducing the adhesion of the green quantum dot curing gel and the red quantum dot photoresist thereon;
  • Step 4 as shown in FIG. 5, coating a green quantum dot curing glue on the substrate 1, since the upper surface of the patterned transparent organic photoresist layer 2' has been subjected to hydrophobic treatment, the green quantum dots
  • the curing adhesive does not adhere to the patterned transparent organic photoresist layer 2', but automatically flows into and fills the groove formed by the patterned transparent organic photoresist layer 2' and the substrate 1, and is solidified to obtain green a quantum dot cured adhesive layer 3, wherein the green quantum dot cured adhesive layer 3 corresponds to the green sub-pixel region and the red sub-pixel region;
  • the green quantum dot curing gel comprises a curing colloid and a green quantum dot mixed in the curing colloid;
  • the curing colloid is a thermosetting adhesive or an ultraviolet curing adhesive; in the step 4, using heat curing, or Curing is carried out in a UV curing manner.
  • Step 5 coating a layer of red quantum dot photoresist on the substrate 1 by The upper surface of the patterned transparent organic photoresist layer 2' has been subjected to a hydrophobic treatment, and the red quantum dot photoresist is not attached to the patterned transparent organic photoresist layer 2', but automatically flows into and fills the pattern.
  • a red quantum dot photoresist layer 4 is obtained, and the red quantum dot photoresist layer 4 corresponds to the green a sub-pixel area, and a red sub-pixel area;
  • Step 6 the red quantum dot photoresist layer 4 is patterned by a photolithography process, and the portion of the red quantum dot photoresist layer 4 corresponding to the green sub-pixel region is removed, and the lower portion is exposed.
  • a green quantum dot curing adhesive layer 3 to obtain a patterned red quantum dot photoresist layer 4'; wherein a portion of the green quantum dot cured adhesive layer 3 corresponding to the green sub-pixel region is used as a quantum dot color film a green sub-pixel portion, the portion of the green quantum dot cured adhesive layer 3 corresponding to the red sub-pixel region and the patterned red quantum dot photoresist layer 4' thereon as a red sub-pixel of the quantum dot color film section.
  • the organic photoresist layer 2 may be disposed higher, such that the height of the patterned transparent organic photoresist layer 2 ′ after the upper surface is hydrophobicized is greater than the green quantum dot curing layer. 3 and the height of the patterned red quantum dot photoresist layer 4', so that the patterned transparent organic photoresist layer 2' can be simultaneously used as a photoresist spacer in the liquid crystal display panel.
  • the quantum dot color film prepared by the invention is used in a display device with a backlight of blue light, the blue backlight passes through the substrate 1 from below the substrate 1 from the bottom to the top, and the blue backlight region emits the blue backlight module.
  • the blue light directly emits blue light through the patterned transparent organic photoresist layer 2'; in the green sub-pixel region, the green quantum dot cured adhesive layer 3 emits green light under the excitation of the blue backlight; in the red sub-pixel region, the green quantum dot is solidified
  • the patterned red quantum dot photoresist layer 4' above the glue layer 3 emits red light under the excitation of green light, thereby realizing the function of color filter.
  • the method for preparing the quantum dot color film further comprises the step 7: after the step 6, forming a green color resist layer 31 on the surface of the exposed green quantum dot cured adhesive layer 3, The blue light that is not excited in the backlight is filtered, and a red color resist layer 41 is formed on the surface of the remaining red quantum dot photoresist layer 4' to filter the unexcited blue light and green light.
  • the quantum dot color film of the invention can be used for the color filter in the current LCD display, can be placed on the side of the color film substrate in the display panel, or the quantum dot color film can also be formed on the array substrate in the display panel. On the side, this is a COA (Color Filter On Array) design, and a quantum dot display panel can be obtained from the quantum dot color film.
  • COA Color Filter On Array
  • the transparent organic photoresist layer is subjected to hydrophobic treatment by means of The hydrophobic property sequentially applies green quantum dot curing gel and red quantum dot photoresist to the corresponding regions, and sequentially obtains a green quantum dot cured adhesive layer and a red amount thereon.
  • the sub-dot photoresist layer is etched by a photolithography process to obtain a portion of the red quantum dot photoresist layer, and the green sub-pixel portion and the red sub-pixel portion of the quantum dot color film are compared with the conventional quantum dot color
  • the film fabrication method at least reduces the lithography process, greatly simplifies the process, reduces the cost, improves the production efficiency, and only needs to develop a quantum dot photoresist, which reduces the difficulty and cost of development.

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  • Optics & Photonics (AREA)
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  • Mathematical Physics (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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Abstract

一种量子点彩膜的制备方法，该方法利用透明有机光阻材料通过光刻工艺形成量子点彩膜的蓝色子像素部分后，对透明有机光阻层（2）进行疏水处理，借助疏水特性依次将绿色量子点固化胶、及红色量子点光刻胶涂布于相应的区域上，依次得到绿色量子点固化胶层（3）、及其上的红色量子点光刻胶层（4），再通过光刻工艺将部分红色量子点光刻胶层（4）进行蚀刻，即可得到量子点彩膜的绿色子像素部分、及红色子像素部分，相对于传统的量子点彩膜的制作方法至少减少了一次光刻工艺，大大简化了制程、降低了成本，提高了生产效率，且只需要开发一种量子点光刻胶，降低了开发的难度和成本。

Description

量子点彩膜的制备方法 技术领域
本发明涉及显示技术领域，尤其涉及一种量子点彩膜的制备方法。
背景技术
随着显示技术的不断发展，人们对显示装置的显示质量要求也越来越高。量子点(Quantum Dots，简称QDs)通常是由Ⅱ-Ⅵ、或Ⅲ-Ⅴ族元素组成的球形或类球形的半导体纳米微粒，粒径一般在几纳米至数十纳米之间。由于QDs的粒径尺寸小于或者接近相应体材料的激子波尔半径，会产生量子限域效应，其能级结构从体材料的准连续变为量子点材料的离散结构，导致QDs展示出特殊的受激辐射发光的性能。随着QDs的尺寸减小，其能级带隙增加，相应的QDs受激所需要的能量以及QDs受激后回到基态放出的能量都相应的增大，表现为QDs的激发与荧光光谱的“蓝移”现象，通过控制QDs的尺寸，使其发光光谱可以覆盖整个可见光区域。如硒化镉(CdSe)的尺寸从6.6nm减小至2.0nm，其发光波长从红光区域635nm“蓝移”至蓝光区域的460nm。
量子点材料具有发光光谱集中，色纯度高、且发光颜色可通过量子点材料的尺寸、结构或成分进行简易调节等优点，利用这些优点将其应用在显示装置中可有效地提升显示装置的色域及色彩还原能力。如专利CN102944943A、及专利US20150002788A1均提出了用具有图案结构的量子点层替代彩色滤光膜(Color Filter)以达到彩色显示目的的技术方案，但是该些专利并未对量子点层图形化的方法进行说明。
现有量子点显示装置在制作量子点图形时，通常首先将红色、绿色、及蓝色量子点材料对应地与红色、绿色、及蓝色量子点光刻胶混合，然后进行曝光、显影形成含有量子点的图形，但是此种方法需事先将红色、绿色、蓝色量子点分别与红色、绿色、及蓝色量子点光刻胶混合，需要进行3次光刻制程，制程繁琐，并且至少要同时开发红色和绿色的量子点光刻胶，量子点光刻胶开发难度高。除上述方法以外，还可以通过转印、网印等方法来制作量子点图形，但是转印的方法所得到的量子点图形分辨率不高，图形边缘呈现锯齿状，并且量子点层与基体的黏着力有待提高；而喷墨打印形成图形化量子点层的方法对喷墨打印设备要求很高，如何保证喷墨墨滴的稳定性及打印精度仍有技术壁垒，仍不能大规模生产。
发明内容
本发明的目的在于提供一种量子点彩膜的制备方法，能够节省一道光刻工艺，简化制程，节约成本，提高生产效率，并降低量子点光刻胶的开发难度和成本。
为实现上述目的，本发明提供了一种量子点彩膜的制备方法，包括如下步骤：
步骤1、提供基板，所述基板包括数个蓝色子像素区域、绿色子像素区域、及红色子像素区域；在所述基板上涂布一层透明有机光阻材料，形成透明有机光阻层；
步骤2、通过光刻工艺对所述透明有机光阻层进行图案化处理，去掉透明有机光阻层上对应所述蓝色子像素区域以外的部分，得到图案化的透明有机光阻层，所述图案化的透明有机光阻层作为量子点彩膜的蓝色子像素部分；
步骤3、对所述图案化的透明有机光阻层的上表面做疏水处理；
步骤4、在所述基板上涂布一层绿色量子点固化胶，所述绿色量子点固化胶不附着在图案化的透明有机光阻层上、而填充于图案化的透明有机光阻层与所述基板形成的凹槽内，经固化后，得到绿色量子点固化胶层，所述绿色量子点固化胶层对应于所述绿色子像素区域、及红色子像素区域；
步骤5、在所述基板上涂布一层红色量子点光刻胶，所述红色量子点光刻胶不附着在透明有机光阻层上、而填充于图案化的透明有机光阻层与所述绿色量子点固化胶层形成的凹槽内，得到红色量子点光刻胶层，所述红色量子点光刻胶层对应于所述绿色子像素区域、及红色子像素区域；
步骤6、通过光刻工艺对所述红色量子点光刻胶层进行图案化处理，去掉红色量子点光刻胶层上对应绿色子像素区域的部分，露出其下方的绿色量子点固化胶层，得到图案化的红色量子点光刻胶层；其中，所述绿色量子点固化胶层上对应于所述绿色子像素区域的部分作为量子点彩膜的绿色子像素部分，所述绿色量子点固化胶层上对应于所述红色子像素区域的部分及其上方图案化的红色量子点光刻胶层作为量子点彩膜的红色子像素部分。
所述步骤1还包括，在涂布一层透明有机光阻材料之前，在所述基板上通过光刻工艺形成黑色矩阵。
所述黑色矩阵将所述蓝色子像素区域、绿色子像素区域、及红色子像素区域间隔开。
还包括步骤7：经步骤6后，在露出的绿色量子点固化胶层的表面上形成一层绿色色阻层，在所述图案化的红色量子点光刻胶层的表面上形成一层红色色阻层。
所述步骤1中形成的透明有机光阻层的厚度为0-20μm。
所述步骤1中提供的基板用于制作液晶显示面板中的阵列基板。
所述步骤1中提供的基板用于制作液晶显示面板中的彩膜基板。
所述量子点彩膜用于背光为蓝光的显示装置中。
所述绿色量子点固化胶包含固化胶体、及混合于固化胶体中的绿色量子点；所述固化胶体为热固化胶、或紫外固化胶；所述步骤4中，采用热固化、或紫外固化的方式进行固化。
上表面做疏水处理后的图案化的透明有机光阻层的高度大于所述绿色量子点固化胶层与图案化的红色量子点光刻胶层的高度；所述透明有机光阻层还用作液晶显示面板内的光阻间隔物。
本发明还提供一种量子点彩膜的制备方法，包括如下步骤：
步骤1、提供基板，所述基板包括数个蓝色子像素区域、绿色子像素区域、及红色子像素区域；在所述基板上涂布一层透明有机光阻材料，形成透明有机光阻层；
步骤2、通过光刻工艺对所述透明有机光阻层进行图案化处理，去掉透明有机光阻层上对应所述蓝色子像素区域以外的部分，得到图案化的透明有机光阻层，所述图案化的透明有机光阻层作为量子点彩膜的蓝色子像素部分；
步骤3、对所述图案化的透明有机光阻层的上表面做疏水处理；
步骤4、在所述基板上涂布一层绿色量子点固化胶，所述绿色量子点固化胶不附着在图案化的透明有机光阻层上、而填充于图案化的透明有机光阻层与所述基板形成的凹槽内，经固化后，得到绿色量子点固化胶层，所述绿色量子点固化胶层对应于所述绿色子像素区域、及红色子像素区域；
步骤5、在所述基板上涂布一层红色量子点光刻胶，所述红色量子点光刻胶不附着在图案化的透明有机光阻层上、而填充于图案化的透明有机光阻层与所述绿色量子点固化胶层形成的凹槽内，得到红色量子点光刻胶层，所述红色量子点光刻胶层对应于所述绿色子像素区域、及红色子像素区域；
步骤6、通过光刻工艺对所述红色量子点光刻胶层进行图案化处理，去掉红色量子点光刻胶层上对应绿色子像素区域的部分，露出其下方的绿色量子点固化胶层，得到图案化的红色量子点光刻胶层；其中，所述绿色量子点固化胶层上对应于所述绿色子像素区域的部分作为量子点彩膜的绿色 子像素部分，所述绿色量子点固化胶层上对应于所述红色子像素区域的部分及其上方图案化的红色量子点光刻胶层作为量子点彩膜的红色子像素部分；
其中，所述步骤1还包括，在涂布一层透明有机光阻材料之前，在所述基板上通过光刻工艺形成黑色矩阵；
其中，所述黑色矩阵将所述蓝色子像素区域、绿色子像素区域、及红色子像素区域间隔开；
还包括步骤7：经步骤6后，在露出的绿色量子点固化胶层的表面上形成一层绿色色阻层，在所述图案化的红色量子点光刻胶层的表面上形成一层红色色阻层；
其中，所述步骤1中形成的透明有机光阻层的厚度为0-20μm；
其中，所述绿色量子点固化胶包含固化胶体、及混合于固化胶体中的绿色量子点；所述固化胶体为热固化胶、或紫外固化胶；所述步骤4中，采用热固化、或紫外固化的方式进行固化。
本发明的有益效果：本发明提供了一种量子点彩膜的制备方法。本发明的量子点彩膜的制备方法，利用透明有机光阻材料通过光刻工艺形成量子点彩膜的蓝色子像素部分后，对透明有机光阻层进行疏水处理，借助疏水特性依次将绿色量子点固化胶、及红色量子点光刻胶涂布于相应的区域上，依次得到绿色量子点固化胶层、及其上的红色量子点光刻胶层，再通过光刻工艺将部分红色量子点光刻胶层进行蚀刻，即可得到量子点彩膜的绿色子像素部分、及红色子像素部分，相对于传统的量子点彩膜的制作方法至少减少了一次光刻工艺，大大简化了制程、降低了成本，提高了生产效率，且只需要开发一种量子点光刻胶，降低了开发的难度和成本。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的量子点彩膜的制备方法的流程示意图；
图2为本发明的量子点彩膜的制备方法的步骤1的示意图；
图3为本发明的量子点彩膜的制备方法的步骤2的示意图；
图4为本发明的量子点彩膜的制备方法的步骤3的示意图；
图5为本发明的量子点彩膜的制备方法的步骤4的示意图；
图6为本发明的量子点彩膜的制备方法的步骤5的示意图；
图7为本发明的量子点彩膜的制备方法的步骤6的示意图；
图8为本发明的量子点彩膜的制备方法的步骤7的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1-8，本发明提供一种量子点彩膜的制备方法，包括如下步骤：
步骤1、如图2所示，提供基板1，所述基板1包括数个蓝色子像素区域、绿色子像素区域、及红色子像素区域；在所述基板1上涂布一层透明有机光阻材料，形成透明有机光阻层2；
具体的，所述步骤1还包括，在涂布一层透明有机光阻材料之前，在所述基板1上通过光刻工艺形成黑色矩阵5；所述黑色矩阵5将所述蓝色子像素区域、绿色子像素区域、及红色子像素区域间隔开。
具体的，所述步骤1中形成的透明有机光阻层2的厚度为0-20μm。
步骤2、如图3所示，通过光刻工艺对所述透明有机光阻层2进行图案化处理，去掉透明有机光阻层2上对应所述蓝色子像素区域以外的部分，得到图案化的透明有机光阻层2’，所述图案化的透明有机光阻层2’作为量子点彩膜的蓝色子像素部分；
步骤3、如图4所示，对剩余的透明有机光阻层2’的上表面做疏水处理，使得后续步骤中使用的绿色量子点固化胶、红色量子点光刻胶在其上的接触角减小，降低绿色量子点固化胶、红色量子点光刻胶在其上的附着力；
步骤4、如图5所示，在所述基板1上涂布一层绿色量子点固化胶，由于图案化的透明有机光阻层2’的上表面已经做过疏水处理，所述绿色量子点固化胶不附着在图案化的透明有机光阻层2’上、而自动流入并填充于图案化的透明有机光阻层2’与所述基板1形成的凹槽内，经固化后，得到绿色量子点固化胶层3，所述绿色量子点固化胶层3对应于所述绿色子像素区域、及红色子像素区域；
具体的，所述绿色量子点固化胶包含固化胶体、及混合于固化胶体中的绿色量子点；所述固化胶体为热固化胶、或紫外固化胶；所述步骤4中，采用热固化、或紫外固化的方式进行固化。
步骤5、如图6所示，在所述基板1上涂布一层红色量子点光刻胶，由 于图案化的透明有机光阻层2’的上表面已经做过疏水处理，所述红色量子点光刻胶不附着在图案化的透明有机光阻层2’上、而自动流入并填充于图案化的透明有机光阻层2’与所述绿色量子点固化胶层3形成的凹槽内，得到红色量子点光刻胶层4，所述红色量子点光刻胶层4对应于所述绿色子像素区域、及红色子像素区域；
步骤6、如图7所示，通过光刻工艺对所述红色量子点光刻胶层4进行图案化处理，去掉红色量子点光刻胶层4上对应绿色子像素区域的部分，露出其下方的绿色量子点固化胶层3，得到图案化的红色量子点光刻胶层4’；其中，所述绿色量子点固化胶层3上对应于所述绿色子像素区域的部分作为量子点彩膜的绿色子像素部分，所述绿色量子点固化胶层3上对应于所述红色子像素区域的部分及其上方图案化的红色量子点光刻胶层4’作为量子点彩膜的红色子像素部分。
具体的，所述步骤1中，有机光阻层2可以设置得较高，以使得上表面做疏水处理后的图案化的透明有机光阻层2’的高度大于所述绿色量子点固化胶层3与图案化的的红色量子点光刻胶层4’的高度，从而使所述图案化的透明有机光阻层2’同时可以用作液晶显示面板内的光阻间隔物。
具体的，本发明制备的量子点彩膜用于背光为蓝光的显示装置中，蓝光背光从基板1的下方从下往上穿过基板1，蓝色子像素区域内，蓝光背光模组发出的蓝光直接通过图案化的透明有机光阻层2’发出蓝光；绿色子像素区域内，绿色量子点固化胶层3在蓝光背光的激发下发出绿光；红色子像素区域内，位于绿色量子点固化胶层3上方的图案化的红色量子点光刻胶层4’在绿光的激发下发出红光，进而实现彩色滤光的功能。
进一步的，如图8所示，该量子点彩膜的制备方法还包括步骤7：经步骤6后，在露出的绿色量子点固化胶层3的表面上形成一层绿色色阻层31，以过滤背光中没激发的蓝光，在所述剩余的红色量子点光刻胶层4’的表面上形成一层红色色阻层41，以过滤没激发的蓝光和绿光。
本发明的量子点彩膜可以用于目前LCD显示器中的彩色滤光片，可置于显示面板中的彩膜基板一侧，或者该量子点彩膜也可以形成于显示面板中的阵列基板一侧，此为COA(Color filter On Array)设计，均可由此量子点彩膜获得量子点显示面板。
综上所述，本发明的量子点彩膜的制备方法，利用透明有机光阻材料通过光刻工艺形成量子点彩膜的蓝色子像素部分后，对透明有机光阻层进行疏水处理，借助疏水特性依次将绿色量子点固化胶、及红色量子点光刻胶涂布于相应的区域上，依次得到绿色量子点固化胶层、及其上的红色量 子点光刻胶层，再通过光刻工艺将部分红色量子点光刻胶层进行蚀刻，即可得到量子点彩膜的绿色子像素部分、及红色子像素部分，相对于传统的量子点彩膜的制作方法至少减少了一次光刻工艺，大大简化了制程、降低了成本，提高了生产效率，且只需要开发一种量子点光刻胶，降低了开发的难度和成本。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (15)

  1. 一种量子点彩膜的制备方法，包括如下步骤：
    步骤1、提供基板，所述基板包括数个蓝色子像素区域、绿色子像素区域、及红色子像素区域；在所述基板上涂布一层透明有机光阻材料，形成透明有机光阻层；
    步骤2、通过光刻工艺对所述透明有机光阻层进行图案化处理，去掉透明有机光阻层上对应所述蓝色子像素区域以外的部分，得到图案化的透明有机光阻层，所述图案化的透明有机光阻层作为量子点彩膜的蓝色子像素部分；
    步骤3、对所述图案化的透明有机光阻层的上表面做疏水处理；
    步骤4、在所述基板上涂布一层绿色量子点固化胶，所述绿色量子点固化胶不附着在图案化的透明有机光阻层上、而填充于图案化的透明有机光阻层与所述基板形成的凹槽内，经固化后，得到绿色量子点固化胶层，所述绿色量子点固化胶层对应于所述绿色子像素区域、及红色子像素区域；
    步骤5、在所述基板上涂布一层红色量子点光刻胶，所述红色量子点光刻胶不附着在图案化的透明有机光阻层上、而填充于图案化的透明有机光阻层与所述绿色量子点固化胶层形成的凹槽内，得到红色量子点光刻胶层，所述红色量子点光刻胶层对应于所述绿色子像素区域、及红色子像素区域；
    步骤6、通过光刻工艺对所述红色量子点光刻胶层进行图案化处理，去掉红色量子点光刻胶层上对应绿色子像素区域的部分，露出其下方的绿色量子点固化胶层，得到图案化的红色量子点光刻胶层；其中，所述绿色量子点固化胶层上对应于所述绿色子像素区域的部分作为量子点彩膜的绿色子像素部分，所述绿色量子点固化胶层上对应于所述红色子像素区域的部分及其上方图案化的红色量子点光刻胶层作为量子点彩膜的红色子像素部分。
  2. 如权利要求1所述的量子点彩膜的制备方法，其中，所述步骤1还包括，在涂布一层透明有机光阻材料之前，在所述基板上通过光刻工艺形成黑色矩阵。
  3. 如权利要求2所述的量子点彩膜的制备方法，其中，所述黑色矩阵将所述蓝色子像素区域、绿色子像素区域、及红色子像素区域间隔开。
  4. 如权利要求1所述的量子点彩膜的制备方法，还包括步骤7：经步骤6后，在露出的绿色量子点固化胶层的表面上形成一层绿色色阻层，在 所述图案化的红色量子点光刻胶层的表面上形成一层红色色阻层。
  5. 如权利要求1所述的量子点彩膜的制备方法，其中，所述步骤1中形成的透明有机光阻层的厚度为0-20μm。
  6. 如权利要求1所述的量子点彩膜的制备方法，其中，所述步骤1中提供的基板用于制作液晶显示面板中的阵列基板。
  7. 如权利要求1所述的量子点彩膜的制备方法，其中，所述步骤1中提供的基板用于制作液晶显示面板中的彩膜基板。
  8. 如权利要求1所述的量子点彩膜的制备方法，其中，所述量子点彩膜用于背光为蓝光的显示装置中。
  9. 如权利要求1所述的量子点彩膜的制备方法，其中，所述绿色量子点固化胶包含固化胶体、及混合于固化胶体中的绿色量子点；所述固化胶体为热固化胶、或紫外固化胶；所述步骤4中，采用热固化、或紫外固化的方式进行固化。
  10. 如权利要求1所述的量子点彩膜的制备方法，其中，上表面做疏水处理后的图案化的透明有机光阻层的高度大于所述绿色量子点固化胶层与图案化的红色量子点光刻胶层的高度；所述透明有机光阻层还用作液晶显示面板内的光阻间隔物。
  11. 一种量子点彩膜的制备方法，包括如下步骤：
    步骤1、提供基板，所述基板包括数个蓝色子像素区域、绿色子像素区域、及红色子像素区域；在所述基板上涂布一层透明有机光阻材料，形成透明有机光阻层；
    步骤2、通过光刻工艺对所述透明有机光阻层进行图案化处理，去掉透明有机光阻层上对应所述蓝色子像素区域以外的部分，得到图案化的透明有机光阻层，所述图案化的透明有机光阻层作为量子点彩膜的蓝色子像素部分；
    步骤3、对所述图案化的透明有机光阻层的上表面做疏水处理；
    步骤4、在所述基板上涂布一层绿色量子点固化胶，所述绿色量子点固化胶不附着在图案化的透明有机光阻层上、而填充于图案化的透明有机光阻层与所述基板形成的凹槽内，经固化后，得到绿色量子点固化胶层，所述绿色量子点固化胶层对应于所述绿色子像素区域、及红色子像素区域；
    步骤5、在所述基板上涂布一层红色量子点光刻胶，所述红色量子点光刻胶不附着在图案化的透明有机光阻层上、而填充于图案化的透明有机光阻层与所述绿色量子点固化胶层形成的凹槽内，得到红色量子点光刻胶层，所述红色量子点光刻胶层对应于所述绿色子像素区域、及红色子像素区域；
    步骤6、通过光刻工艺对所述红色量子点光刻胶层进行图案化处理，去掉红色量子点光刻胶层上对应绿色子像素区域的部分，露出其下方的绿色量子点固化胶层，得到图案化的红色量子点光刻胶层；其中，所述绿色量子点固化胶层上对应于所述绿色子像素区域的部分作为量子点彩膜的绿色子像素部分，所述绿色量子点固化胶层上对应于所述红色子像素区域的部分及其上方图案化的红色量子点光刻胶层作为量子点彩膜的红色子像素部分；
    其中，所述步骤1还包括，在涂布一层透明有机光阻材料之前，在所述基板上通过光刻工艺形成黑色矩阵；
    其中，所述黑色矩阵将所述蓝色子像素区域、绿色子像素区域、及红色子像素区域间隔开；
    还包括步骤7：经步骤6后，在露出的绿色量子点固化胶层的表面上形成一层绿色色阻层，在所述图案化的红色量子点光刻胶层的表面上形成一层红色色阻层；
    其中，所述步骤1中形成的透明有机光阻层的厚度为0-20μm；
    其中，所述绿色量子点固化胶包含固化胶体、及混合于固化胶体中的绿色量子点；所述固化胶体为热固化胶、或紫外固化胶；所述步骤4中，采用热固化、或紫外固化的方式进行固化。
  12. 如权利要求11所述的量子点彩膜的制备方法，其中，所述步骤1中提供的基板用于制作液晶显示面板中的阵列基板。
  13. 如权利要求11所述的量子点彩膜的制备方法，其中，所述步骤1中提供的基板用于制作液晶显示面板中的彩膜基板。
  14. 如权利要求11所述的量子点彩膜的制备方法，其中，所述量子点彩膜用于背光为蓝光的显示装置中。
  15. 如权利要求11所述的量子点彩膜的制备方法，其中，上表面做疏水处理后的图案化的透明有机光阻层的高度大于所述绿色量子点固化胶层与图案化的红色量子点光刻胶层的高度；所述透明有机光阻层还用作液晶显示面板内的光阻间隔物。
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