WO2017058103A1 - Alloyed silver wire - Google Patents
Alloyed silver wire Download PDFInfo
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- WO2017058103A1 WO2017058103A1 PCT/SG2016/000015 SG2016000015W WO2017058103A1 WO 2017058103 A1 WO2017058103 A1 WO 2017058103A1 SG 2016000015 W SG2016000015 W SG 2016000015W WO 2017058103 A1 WO2017058103 A1 WO 2017058103A1
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- core
- alloyed silver
- alloyed
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0255—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in welding
- B23K35/0261—Rods, electrodes, wires
- B23K35/0272—Rods, electrodes, wires with more than one layer of coating or sheathing material
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Definitions
- the invention relates to an 8 to 80 pm thick alloyed silver wire comprising a core comprising silver, palladium, gold, nickel and calcium in a specific weight ratio.
- the invention further relates to a process for manufacturing such wire.
- bonding wires in electronics and microelectronics applications is well-known state of the art. While bonding wires were made from gold in the beginning, nowadays less expensive materials are used such as copper, copper alloys, silver and silver alloys.
- FAB axi-symmetrical free air ball
- the invention relates to an alloyed silver wire comprising or consisting of a wire core (hereinafter also called “core” for short), the wire core itself consisting of: (a) palladium in an amount in the range of from 0.1 to 3 wt.-% (weight-%, % by weight), preferably 0.5 to 1.5 wt.-%,
- nickel in an amount in the range of from 20 to 700 wt.-ppm (weight-ppm, ppm by weight), preferably 275 to 325 wt.-ppm,
- wt.-% and wt.-ppm are based on the total weight of the core, wherein the alloyed silver wire has an average diameter in the range of from 8 to 80 ⁇ or even in the range of from 12 to 55 m.
- the alloyed silver wire is preferably a bonding wire for bonding in microelectronics.
- the alloyed silver wire is preferably a one-piece object. Numerous shapes are known and appear useful for alloyed silver wires of the invention. Preferred shapes are - in cross- sectional view - round, ellipsoid and rectangular shapes.
- the average diameter or, simply stated, the diameter of a wire or wire core can be obtained by the "sizing method". According to this method the physical weight of the alloyed silver wire for a defined length is determined. Based on this weight, the diameter of a wire or wire core is calculated using the density of the wire material. The diameter is calculated as arithmetic mean of five measurements on five cuts of a particular wire.
- bonding wire comprises all shapes of cross-sections and all usual wire diameters, though bonding wires with circular cross-section and thin diameters are preferred.
- the wire core comprises (a) palladium, (b) gold, (c) nickel, (d) calcium, and (e) silver in the afore disclosed proportional ratio.
- the core of the alloyed silver wire of the invention may comprise (f) further components in a total amount of 0 to 100 wt.-ppm.
- the further components often also referred as "inevitable impurities" are minor amounts of chemical elements and/or compounds which originate from impurities present in the raw materials used or from the wire manufacturing process, i.e., the presence of further components of the (f) type may for example originate from impurities present in one or more of the silver, palladium, gold, nickel and calcium.
- Such further components are: Cu, Fe, Si, Mn, Cr, Ce, Mg, La, Al, B, Zr, Ti, S, etc.
- the low total amount of 0 to 100 wt.-ppm of the further components (f) ensures a good reproducibility of the wire properties.
- Further components (f) present in the core are usually not added separately.
- the core of the alloyed silver wire of the invention comprises less than the following amounts of further components (f):
- the core of the alloyed silver wire in the present context is defined as a homogenous region of bulk material. Since any bulk material always has a surface region which might exhibit different properties to some extent, the properties of the core of the wire are understood as properties of the homogeneous region of bulk material.
- the surface of the bulk material region can differ in terms of morphology, composition (e.g. sulfur, chlorine and/or oxygen content) and other features.
- the surface can be an outer surface of the wire core; in such embodiment, the alloyed silver wire of the invention consists of the wire core. In an alternative, the surface can be an interface region between the wire core and a coating layer superimposed on the wire core.
- first item e.g. a wire core
- second item e.g. a coating layer
- “Superimposed” characterizes, that further items, such as an intermediate layer, can - but no need to - be arranged between the first and the second item.
- the second item is at least partially superimposed over the first item, e.g. for at least 30 %, 50 %, 70 % or for at least 90 %, each with respect to the total surface of the first item. Most preferably, the second item is completely superimposed over the first item.
- intermediate layer in the context of this invention refers to a region of the alloyed silver wire between its core and coating layer superimposed thereon. In this region, a combination of materials of both, the core and the coating layer, is present.
- thickness in the context of this invention is used to define the size of a layer in perpendicular direction to the longitudinal axis of the core, which layer is at least partially superimposed over the surface of the core.
- the core has a surface, wherein a coating layer is superimposed over the surface of the core.
- the mass of the coating layer is not more than 5 wt.-%, preferably 2 wt.-% or less, each with respect to the total mass of the core.
- a coating layer When a coating layer is present, it often has a minimum mass of 0.1 wt.-% or more or 0.5 wt.-% or more, each with respect to the total mass of the core.
- Applying a low amount of material as coating layer preserves the characteristics which are defined by the material of the core of the wire.
- the coating layer awards particular characteristics to the wire surface such as being inert against environment, resistance to corrosion, improved bondability, etc.
- the thickness of the coating layer is in the range of from 20 to 120 nm for a wire of 18 pm in diameter.
- the coating layer may have a thickness in the range of from 30 to 150 nm, for example.
- the coating layer can be made of a precious metal element.
- the coating layer can be a single-layer of one of said elements.
- the coating layer can be a multi-layer comprised of a number of super-positioned adjacent sub-layers, wherein each sub-layer is made of a different precious metal element.
- plating such as electroplating and electroless plating, deposition of the material from the gas phase such as sputtering, ion plating, vacuum evaporation and physical vapor deposition, and deposition of the material from the melt.
- the alloyed silver wire of the invention or its core is characterized at least by one of the following intrinsic properties (see “Test method A” as described below):
- the average wire grain size (average grain size) is less than 10 pm, for example in the range of from 2 to 6 pm, preferably in the range of from 2 to 4 pm,
- the wire grain [100] or [101 ] or [111] plane of orientation is less than 7 %, for example in the range of from 1 to 5 %, preferably in the range of from 2 to 3.5 %,
- the wire twin boundary fraction is less than 60 %, for example in the range of from 30 to 50 %, preferably in the range of from 40 % to 45 %,
- the FAB exhibits columnar grains (grains are elongated),
- the FAB average grain size is ⁇ 18 pm, for example in the range of from 6 to 14 pm, preferably in the range of from 8 to 12 pm,
- the FAB grain [101] plane of orientation is less than 45 %, for example in the range of from 30 to 40 %, preferably in the range of from 32 to 36 %,
- the FAB twin boundary fraction is less than 70 %, for example in the range of from 30 to 65 %, preferably in the range of from 60 % to 65 %,
- the corrosion resistance has a value of not more than 5 % bonded ball lift, for example in the range of from 0 to 5 %, (see “Test method B” as described below), ( ?) The moisture resistance has a value of not more than 5 % bonded ball lift, for example in the range of from 0 to 5 %, (see “Test method C” as described below), ( ⁇ ) The hardness of the wire core is not more than 85 HV, for example in the range of from 50 to 85 HV, preferably in the range of from 65 to 75 HV, (see “Test method D” as described below),
- the process window area for stitch bonding has a value of at least 12000 mA ⁇ g, for example 13000 to 14400 mA ⁇ g for a wire of 18 pm in diameter, (see the detailed disclosure and "Test method E” as described below), (e)
- the resistivity of the wire is less than 2.5 ⁇ , for example in the range of from 1.7 to 2.4 ⁇ , preferably in the range of from 2.2 to 2.4 ⁇ -cm, (see “Test method F” as described below),
- the yield strength of the wire is not more than 170 MPa, for example in the range of from 140 to 170 MPa, (see “Test method G” as described below),
- the wire's silver dendritic growth is not more than 4 pm/s, for example in the range of from 2 to 4 pm/s, preferably in the range of from 2 to 3 pm/s, (see “Test method H” as described below).
- the terms "intrinsic property” and “extrinsic property” are used herein with regard to a wire core or a FAB. Intrinsic properties mean properties which a wire core or a FAB has of itself (independently of other factors), while extrinsic properties depend on the wire core's or FAB's relationship with other factors like a measuring method and/or measuring conditions employed.
- the hardness of the wire core i.e. hardness prior to bonding
- the hardness of the wire core is less than 85 HV, preferably in the range of from 65 to 75 HV.
- hardness of the FAB processed using a wire of the invention prior to bonding is less than 80 HV, preferably in the range of from 60 to 70 HV.
- Such hardness or, more precisely, softness of the wire core and FAB helps to prevent damage of a sensitive substrate in the course of bonding.
- Such soft wires according to the invention exhibit very soft FAB properties. Such limitation of FAB hardness is particularly helpful if mechanically sensitive structures are aligned below a bond pad.
- a bond pad consists of a soft material like aluminum or gold.
- the sensitive structure can, for example, comprise one or several layers of porous silicon dioxide, in particular with a dielectric constant of less than 2.5.
- porous and hence weak material is becoming increasingly common as it can help to increase the device performance. Therefore, the mechanical properties of the bonding wire of the invention can be optimized to avoid cracking or other damaging of such weak layers.
- the alloyed silver wire of the invention exhibits a silver dendritic growth at a rate of less than 4 pm/s, for example in the range of from 2 to less than 4 pm/s, preferably in the range of from 2 to 3 pm/s, which is about l/IO 01 to 1/7 lh of the about 25 pm/s growth rate of a 4N pure silver wire.
- the resistivity of the wire is less than 3.2 ⁇ -cm, for example in the range of from 2.0 to 2.4 ⁇ -cm, preferably in the range of from 2.2 to 2.4 ⁇ -crn, i.e. meaning suitability for many applications.
- the invention relates also to a process for the manufacture of the alloyed silver wire in any of its embodiments disclosed above. The process comprises at least the steps:
- nickel in an amount in the range of from 20 to 700 wt.-ppm, preferably 275 to 325 wt.-ppm,
- step (2) includes one or more sub-steps of intermediate batch annealing of the elongated precursor item at an oven set temperature of from 400 to 800 °C for an exposure time in the range of from 50 to 150 minutes and/or one or more sub-steps of intermediate strand annealing of the elongated precursor item at an oven set temperature of from 400 to 800 °C for an exposure time in the range of from 0.4 seconds to 1.2 seconds.
- Strand annealing is used herein. It is a continuous process allowing for a fast production of a wire with high reproducibility. Strand annealing means that the annealing is done dynamically while an elongated wire precursor item or wire precursor to be annealed is moved through an annealing oven and spooled onto a reel after having left the annealing oven.
- the term "oven set temperature” is used herein. It means the temperature fixed in the temperature controller of the annealing oven.
- the annealing oven may be a chamber furnace type oven (in case of batch annealing) or a tubular annealing oven (in case of strand annealing).
- precursor item is used for those wire pre-stages which have not reached the desired final diameter of the wire core, while the term “wire precursor” is used for a wire pre-stage at the desired final diameter.
- a precursor item as provided in process step (1) can be obtained by alloying/doping silver with the desired amount of palladium, gold, nickel and calcium.
- the silver alloy itself can be prepared by conventional processes known to the person skilled in the art of metal alloys, for example, by melting together the silver, the palladium, the gold, the nickel and the calcium in the desired ratio. In doing so, it is possible to make use of one or more conventional master alloys.
- the melting process can for example be performed making use of an induction furnace and it is expedient to work under vacuum or under an inert gas atmosphere.
- the materials used can have a purity grade of, for example, 99.99 wt.-% and above.
- the melt so-produced can be cooled to form a homogeneous piece of silver based precursor item.
- such precursor item is in the form of a rod having a diameter of, for example, 2 to 25 mm and a length of, for example, 5 to 100 m.
- Such rod can be made by casting said silver alloy melt in an appropriate mold of room temperature, followed by cooling and solidifying.
- this coating layer is preferably applied to the wire precursor item, which may not yet be elongated, not finally elongated or even fully elongated to the desired final diameter.
- the skilled person knows how to calculate the thickness of such coating layer on a precursor item to obtain the coating layer in the thickness disclosed for the embodiments of the wire, i.e. after elongating the precursor item with the coating layer to form the wire precursor.
- numerous techniques for forming a coating layer of a material according to the embodiments on a silver alloy surface are known.
- Preferred techniques are plating, such as electroplating and electroless plating, deposition of the material from the gas phase such as sputtering, ion plating, vacuum evaporation and physical vapor deposition, and deposition of the material from the melt.
- a metal coating as single-layer or multi-layer to the wire core as disclosed for some of the embodiments of the first aspect of the invention, it is expedient to interrupt process step (2) once a desired diameter of the precursor item is reached. Such diameter may be in the range of, for example, 80 to 200 pm. Then the single- or multi-layer metal coating may be applied, for example, by one or more electroplating process steps. Thereafter process step (2) is continued until the desired final diameter of the wire core is obtained.
- the precursor item is elongated to form a wire precursor, until the desired final diameter of the wire core is obtained.
- Techniques to elongate a precursor item to form a wire precursor are known and appear useful in the context of the invention. Preferred techniques are rolling, swaging, die drawing or the like, of which die drawing is particularly preferred. In the latter case the precursor item is drawn in several process steps until the desired and final diameter of the wire core is reached.
- the desired and final diameter of the wire core may be in the range of from 8 to 80 pm or, preferably, in the range of from 12 to 55 pm.
- wire die drawing process is well known to the person skilled in the art.
- Conventional tungsten carbide and diamond drawing dies may be employed and conventional drawing lubricants may be employed to support the drawing.
- Step (2) of the process of the invention includes one or more sub-steps of intermediate batch annealing of the elongated precursor item at an oven set temperature of from 400 to 800 °C for an exposure time in the range of from 50 to 150 minutes and/or one or more sub-steps of intermediate strand annealing of the elongated precursor item at an oven set temperature of from 400 to 800 °C for an exposure time in the range of from 0.4 seconds to 1.2 seconds.
- the one or more steps of intermediate annealing of the elongated precursor item may be performed between two or more of multiple elongation or drawing steps. To illustrate this by example, there may be performed three
- intermediate annealing steps at three different stages during drawing, for example, a first intermediate batch annealing of a rod drawn to a diameter of 2 mm and coiled on a drum at an oven set temperature in the range of from 400 to 800 °C for an exposure time of 50 to 150 minutes, a second intermediate strand annealing of the precursor item drawn to a diameter of 47 pm at an oven set temperature in the range of from 400 to 800 °C for an exposure time of 0.4 to 1.2 seconds and a third intermediate strand annealing of the precursor item further drawn to a diameter of 27 pm at an oven set temperature in the range of from 400 to 800 °C for an exposure time of 0.4 to .2 seconds.
- process step (3) the elongated wire precursor obtained after completion of process step (2), is finally strand annealed.
- the final strand annealing is performed at an oven set temperature in the range of, for example, 400 to 600 °C for an exposure time of 0.4 to 0.8 seconds, or, in a preferred embodiment, 400 to 500 °C for 0.5 to 0.7 seconds.
- the final strand annealing is typically performed by pulling the elongated wire precursor through a conventional annealing oven, typically in the form of a cylindrical tube of a given length and with a defined temperature profile at a given annealing speed which may be chosen in the range of, for example, from 0 to 60 meters/minute. In so doing the annealing time/oven temperature parameters can be defined and set.
- the finally strand annealed alloyed silver wire is quenched in water which, in an embodiment, may contain one or more additives, for example, 0.01 to 0.07 volume-% of additive(s).
- the quenching in water means immediately or rapidly, i.e. within 0.2 to 0.6 seconds, cooling the finally strand annealed alloyed silver wire from the temperature it experienced in process step (3) down to room temperature, for example by dipping or dripping.
- the final strand annealing may be performed at a temperature which is at least 50 "C lower, for example 210 to 240 °C lower than a temperature at which the maximum elongation value is achieved by annealing; this may result in an elongation value of the wire after annealing being not more than 70 % of the maximum elongation value, for example 30 to 60 % of a maximum elongation value.
- process step (3) may be performed at a temperature which is at least 150 °C, preferably at least 80 °C, or at least 200 °C lower than the temperature of maximum elongation TAL(max). Often, the temperature in process step (3) is not more than 250 °C lower than TAL(max).
- the temperature of maximum elongation T A L(max) is determined by testing the elongation at break of a specimen (wire) at different temperatures. The data points are collected in a graph, showing the elongation (in %) as a function of temperature (°C). The resulting graph is often referred to as an "annealing curve". In the case of silver based wires, a temperature is observed where the elongation (in %) reaches a maximum. This is the temperature of maximum elongation An example is shown in Figure 1 , which shows an exemplary annealing curve of an 18 pm alloyed silver wire according to sample 1 (Table 1). The annealing temperature is the variable parameter of the x-axis.
- the graph shows the measured values of the break load (BL, in grams) and the elongation (EL, in %) of the wire.
- the elongation was determined by tensile testing. Elongation measurements exhibited a typical local maximum value of about 19 % in the displayed example, which was achieved at an annealing temperature of around 700 °C. If the wire according to sample 1 was not final strand annealed at this temperature of maximum elongation, but at 480 °C, which was 220 °C below the temperature of the maximum elongation the result is an elongation value of about 8 % which is more than 40 % below the maximum elongation value.
- the intermediate annealing of process step (2) as well as the final strand annealing of process step (3) may be performed in an inert or reducing atmosphere.
- inert atmospheres as well as reducing atmospheres are known in the art and are used for purging the annealing oven.
- nitrogen or argon is preferred.
- reducing atmospheres hydrogen is preferred.
- Another preferred reducing atmosphere is a mixture of hydrogen and nitrogen.
- Preferred mixtures of hydrogen and nitrogen are 90 to 98 vol.-% nitrogen and, accordingly, 2 to 10 vol.-% hydrogen, wherein the vol.-% total 100 vol.-%.
- nitrogen/hydrogen are equal to 93/7, 95/5 and 97/3 vol.-%/vol.-%, each based on the total volume of the mixture.
- Applying reducing atmospheres in annealing is particularly preferred, if some parts of the surface of the alloyed silver wire are sensitive to oxidation by oxygen of the air.
- the unique combination of the composition of the precursor item material (which is the same as that of the finished alloyed silver wire core) and the annealing parameters prevailing during process steps (2) and (3) is essential to obtain the wire of the invention exhibiting at least one of the above disclosed intrinsic and/or extrinsic properties.
- the temperature/time conditions of the intermediate and the final strand annealing steps allow for achieving or adjusting intrinsic and extrinsic properties of the alloyed silver wire core.
- the alloyed silver wire of the invention is finished. In order to fully benefit from its properties, it is expedient to either use it immediately for wire bonding applications, i.e. without delay, for example, within no longer than 10 days after completion of process step (3).
- the finished wire is typically spooled and vacuum sealed immediately after completion of process step (3), i.e. without delay, for example, within ⁇ 1 to 5 hours after completion of process step (3) and then stored for further use as bonding wire. Storage in vacuum sealed condition should not exceed 6 months. After opening the vacuum seal the alloyed silver wire should be used for wire bonding within no longer than 10 days.
- a third aspect of the invention is an alloyed silver wire obtainable by the afore disclosed process according to the second aspect of the invention or of an embodiment thereof. It has been found that said alloyed silver wire is well suited for use as a bonding wire in wire bonding applications.
- Wire bonding technique is well known to the skilled person. In the course of wire bonding it is typical that a ball bond (1 st bond) and a stitch bond (2 nd bond, wedge bond) are formed. During bond forming a certain force (typically measured in grams) is applied, supported by application of ultrasonic energy (typically measured in mA).
- the wire bonding process window defines the area of force/uitrasonic energy combinations which allow formation of a wire bond that meets specifications, i.e. which passes the conventional tests like conventional pull tests, ball shear test and ball pull test to name only few.
- the 1 st bond (ball bond) process window area is the product of the difference between the upper and the lower limits of the force used in the bonding and the difference between the upper and the lower limits of the applied ultrasonic energy, wherein the resulting bond has to meet certain ball shear test specifications, e.g. a ball shear of 0.0085 grams/ m 2 , no non-stick on bond pad, etc.
- the 2 nd bond (stitch bond) process window area is the product of the difference between the upper and the lower limits of the force used in the bonding and the difference between the upper and the lower limits of the applied ultrasonic energy, wherein the resulting bond has to meet certain pull test specifications, e.g.
- FAB was prepared by performing conventional electric flame-off (EFO) firing by standard firing (single step, EFO current of 18 mA, EFO time 455 ps). Test methods A. to J.
- Electron Backscattered Diffraction (EBSD) Pattern Analysis of Wires and FAB The main steps adopted to measure wire and FAB texture were sample preparation, getting good Kikuchi pattern and component calculation:
- the wires with or without FAB were first potted using epoxy resin and polished as per standard metallographic technique. Ion milling was applied in the final sample preparation step to remove any mechanical deformation of the wire surface,
- the ion-milled cross-sectioned sample surface was sputtered with gold. Then ion milling and gold sputtering were carried out for two further rounds. No chemical etching or ion-etching was carried out.
- the sample was loaded in a FESEM (field emission scanning electron microscope) with a 70° angled holder to the normal FESEM sample holding table surface.
- the FESEM was further equipped with an EBSD detector.
- the electron back-scattering patterns (EBSP) containing the wire crystallographic information were obtained. These patterns were further analyzed for grain orientation fraction, average grain size, etc. (using a software called QUANTAX EBSD program developed by Bruker).
- Points of similar orientation were grouped together to form the texture component. To distinguish different texture components, a maximum tolerance angle of 15° was used. The wire drawing direction was set as a reference orientation. The [100], [101] and [11 ] texture percentages were calculated by measurement of the percentage of crystals with [100], [101] and [111] plane of orientation parallel to the reference orientation.
- Average grain sizes were analyzed defining the crystallographic orientation between neighboring grid points of greater than a minimum, herein 10°, to determine the position of grain boundaries.
- the EBSD software calculated the area of each grain and converted it to equivalent circle diameter, which is defined as "average crystal grain size". All the grains along the longitudinal direction of the wire within a length of ⁇ 100 Mm were counted to determine mean and standard deviation of the average crystal grain size.
- Twin boundaries also called ⁇ 3 CSL twin boundaries
- the twin boundary was described by a 60° rotation about ⁇ 111 > plane of orientation between the neighboring crystallographic domains. The number of points depends on the step size, which was less than 1/5 of the average crystal grain size.
- the wires were ball bonded to AI-0.5wt.-%Cu bond pads.
- the test devices with the so- bonded wires were soaked in salt-solution at 25 °C for 10 minutes, washed with deionized (DI) water and later with acetone.
- the salt-solution contained 20 wt.-ppm NaCI in DI water.
- the number of lifted balls were examined under a low power microscope (Nikon MM-40) at 100X magnification. Observation of a higher number of lifted balls indicated severe interfacial galvanic corrosion.
- the wires were ball bonded to AI-0.5wt.-%Cu bond pads.
- the test devices with the so- bonded wires were stored at 130 °C temperature, 85 % relative humidity (RH) for 8 hours in a highly accelerated stress test (HAST) chamber and later examined for the number of lifted balls under a low power microscope (Nikon MM-40) at 100X
- the hardness was measured using a Mitutoyo HM-200 testing equipment with a Vickers indenter. A force of 10 mN indentation load was applied to a test specimen of wire for a dwell time of 12 seconds. The testing was performed on the center of the wire core and the FAB.
- test wires were bonded using a KNS-iConn bonder tool (Kulicke & Sofia Industries Inc., Fort Washington, PA, USA).
- process window values were based on a wire having an average diameter of 18 pm, wherein the lead finger to which the wire was bonded consisted of silver.
- test specimen i.e. a wire of 1.0 meter in length
- a power source providing a constant current/voltage.
- the resistance was recorded with a device for the supplied voltage.
- the measuring device was a HIOKI model 3280-10, and the test was repeated with at least 0 test specimens. The arithmetic mean of the measurements was used for the calculations given below.
- the tensile properties of the wires were tested using an lnstron-5564 instrument.
- the wires were tested at 2.54 cm/min speed, for 254 mm gauge length (L).
- the load and elongation on fracture (break) were acquired as per ASTM standard F219-96.
- the elongation was the difference in the gauge length ( ⁇ _) of the wire between start and end of the tensile test, usually reported in percentage as (100 ⁇ AUL), calculated from the recorded load versus extension tensile plot.
- the tensile strength and the yield strength were calculated from the break and yield load divided by the wire area.
- the actual diameter of the wire was measured by the sizing method, weighing a standard length of the wire and using the density of it.
- a quantity of silver (Ag), palladium (Pd) and gold (Au) of at least 99.99 % purity (“4N") in each case were melted in a crucible.
- Small amounts of silver-nickel and silver-calcium master alloy were added to the melt and uniform distribution of the added components was ascertained by stirring.
- the following silver-nickel and silver-platinum master alloys were used:
- wire core precursor item in the form of 8 mm rods was continuous cast from the melt.
- the wire core precursor item was then drawn in several drawing steps to form a wire core precursor with a specified diameter of 18 ⁇ 0.5 pm.
- the cross section of the wire core was of essentially circular shape.
- the rods drawn to a diameter of 2 mm and coiled on a drum were intermediate batch- annealed at an oven set temperature of 500 "C for an exposure time of 60 minutes.
- a second intermediate strand annealing of the precursor items drawn to a diameter of 47 pm at an oven set temperature of 600 °C for an exposure time of 0.8 seconds and a third intermediate strand annealing of the precursor items drawn to a diameter of 27 pm at an oven set temperature of 600 °C for an exposure time of 0.6 seconds were performed.
- a final strand annealing of the 18 pm wire core precursors at an oven set temperature of 480 °C for an exposure time of 0.6 seconds was performed followed by quenching the so-obtained wires in water containing 0.05 vol.-% of surfactant.
- Table 1 shows the composition of different wires according to the invention, samples 1 to 5.
- the palladium content was in the range of from 1 to 3 wt.-%.
- the gold content was in the range of from 1 to 1.5 wt.-%.
- the nickel addition was varied from 30 to 300 wt - ppm.
- the calcium content was maintained at 30 and 50 wt.-ppm, respectively.
- the grain sizes of wire samples 1 to 5 were measured and the average grain sizes were reported. The result was in the range of 2 to 5 pm in each case. For sample 1 , the average grain size was 2.91 pm.
- Table 2 below shows results of an evaluation on corrosion and moisture resistance of the bonded wires, behavior of 2 nd bond process window and performance of FAB formation.
- the above defined wire samples 1 to 5 as well as the comparative wire of 4N pure silver were bonded to AI-0.5wt.-%Cu bond pads and tested according to the above disclosed test methods. All tests were carried out with 18 pm wires except for the electromigration test which was performed with 75 pm wires.
- wire sample 1 showed a value of near to zero, i.e. 2 ball lift, which is a particular improvement compared to the 4N pure silver wire (Ref).
- the silver dendritic growth of the wire samples 1 to 5 was much lower than that of the 4N pure silver wire.
- Table 3 shows the average grain size and texture component of wire sample 1 (wire, FAB and heat affected zone (HAZ)).
- Fig. shows an exemplary annealing curve of a silver-palladium-gold-nickel-calcium alloy 18 pm wire, sample 1 (see Table 1 ).
- the annealing time was chosen to a constant value by adjusting the speed of the moving wire.
- the annealing temperature is the variable parameter of the x-axis.
- the graph shows the measured values of the break load (BL, in grams) and the elongation (EL, in %) of the wire.
- the elongation was determined by tensile testing. Elongation measurements exhibited a typical local maximum value of about 19 % in the displayed example, which was achieved at an annealing temperature of around 700 °C.
- Sample wire 1 was annealed at 480 °C, which was 220 °C below the temperature of the maximum elongation according to Figure 1 . This resulted in an elongation value of about 8 %, which is more than 40 % below the maximum elongation value.
- Fig.2 shows an exemplary ion-milled cross-section image of a silver-palladium-gold- nickel-calcium alloy 18 ⁇ wire, sample 1 (Table 1). Grain morphology of the three different locations wire, HAZ and FAB are evident.
- the wire sample 1 was annealed at 480 °C, 7.5% EL.
- Ball to wire size ratio (BSR) of 1.8 and EFO current 18 mA and EFO time 455 ps were applied.
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Abstract
Description
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JP2017563231A JP6619458B2 (en) | 2015-09-29 | 2016-09-05 | Silver alloy wire |
CN201680032772.0A CN107849643A (en) | 2015-09-29 | 2016-09-05 | Alloying silver wire |
KR1020197034183A KR102169059B1 (en) | 2015-09-29 | 2016-09-05 | Alloyed silver wire |
KR1020177035325A KR102083717B1 (en) | 2015-09-29 | 2016-09-05 | Silver alloy wire |
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KR (2) | KR102083717B1 (en) |
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US20070278634A1 (en) * | 2006-05-30 | 2007-12-06 | Mk Electron Co., Ltd. | Au-ag based alloy wire for semiconductor package |
DE102013000057A1 (en) * | 2012-01-02 | 2013-07-04 | Wire Technology Co., Ltd. | Alloy wire made of material comprising silver-gold alloy, silver-palladium alloy and silver-gold-palladium alloy, useful for wire bonding of components of electronic devices, comprises base wire, and layer of plated metal coating |
EP2703116A1 (en) * | 2012-09-04 | 2014-03-05 | Heraeus Materials Technology GmbH & Co. KG | Silver alloy wire for bonding applications |
CN104372197A (en) * | 2014-09-26 | 2015-02-25 | 四川威纳尔特种电子材料有限公司 | Silver alloy wire for semiconductor packaging, and its making method |
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JP2013033811A (en) * | 2011-08-01 | 2013-02-14 | Tatsuta Electric Wire & Cable Co Ltd | Ball bonding wire |
US8940403B2 (en) * | 2012-01-02 | 2015-01-27 | Wire Technology Co., Ltd. | Alloy wire and methods for manufacturing the same |
JP5529992B1 (en) * | 2013-03-14 | 2014-06-25 | タツタ電線株式会社 | Bonding wire |
JP5399581B1 (en) * | 2013-05-14 | 2014-01-29 | 田中電子工業株式会社 | High speed signal bonding wire |
CN105393343A (en) * | 2014-01-31 | 2016-03-09 | 大自达电线株式会社 | Wire bonding and method for producing same |
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US20070278634A1 (en) * | 2006-05-30 | 2007-12-06 | Mk Electron Co., Ltd. | Au-ag based alloy wire for semiconductor package |
DE102013000057A1 (en) * | 2012-01-02 | 2013-07-04 | Wire Technology Co., Ltd. | Alloy wire made of material comprising silver-gold alloy, silver-palladium alloy and silver-gold-palladium alloy, useful for wire bonding of components of electronic devices, comprises base wire, and layer of plated metal coating |
EP2703116A1 (en) * | 2012-09-04 | 2014-03-05 | Heraeus Materials Technology GmbH & Co. KG | Silver alloy wire for bonding applications |
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KR102083717B1 (en) | 2020-03-02 |
TWI649434B (en) | 2019-02-01 |
JP6619458B2 (en) | 2019-12-11 |
KR102169059B1 (en) | 2020-10-23 |
KR20180039015A (en) | 2018-04-17 |
TW201718887A (en) | 2017-06-01 |
CN107849643A (en) | 2018-03-27 |
KR20190131629A (en) | 2019-11-26 |
JP2018530899A (en) | 2018-10-18 |
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