WO2017049883A1 - 一种掩膜版、曝光装置及曝光方法 - Google Patents

一种掩膜版、曝光装置及曝光方法 Download PDF

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Publication number
WO2017049883A1
WO2017049883A1 PCT/CN2016/075914 CN2016075914W WO2017049883A1 WO 2017049883 A1 WO2017049883 A1 WO 2017049883A1 CN 2016075914 W CN2016075914 W CN 2016075914W WO 2017049883 A1 WO2017049883 A1 WO 2017049883A1
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WO
WIPO (PCT)
Prior art keywords
region
substrate
light
target substrate
mask
Prior art date
Application number
PCT/CN2016/075914
Other languages
English (en)
French (fr)
Inventor
齐鹏煜
查长军
王艳萍
汪栋
袁剑峰
邵喜斌
张焱
肖金涛
郭杨辰
Original Assignee
京东方科技集团股份有限公司
北京京东方显示技术有限公司
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Application filed by 京东方科技集团股份有限公司, 北京京东方显示技术有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/309,008 priority Critical patent/US10114283B2/en
Priority to EP16782175.0A priority patent/EP3355116B1/en
Publication of WO2017049883A1 publication Critical patent/WO2017049883A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs

Definitions

  • the present disclosure relates to the field of liquid crystal display, and in particular, to a mask, an exposure apparatus, and an exposure method.
  • Color Filter generally consists of Black Matrix (BM), Red Green Blue (RGB), Over Coat (OC) / Indium-Tin Oxide (ITO). It is composed of components such as Pillar Spacer (PS); among them, components such as BM, RGB, and PS require exposure and development work during production.
  • the factors affecting the line width of the exposure pattern mainly include the illuminance of the exposure amount, the conductivity of the developer, and the opening width of the corresponding Mask.
  • Inclining development during development causes a development unevenness during development.
  • the uneven development is due to the fact that during the development (Develop, Dev), the glass substrate (Glass Substrate) is tilted to cause the chemical solution that has been involved in the development to flow to the lower portion of the glass substrate, and the concentration of the developer in other regions is phase-diluted during the flow, Causes uneven development.
  • the illumination of the device is also offset, which also affects the distribution of the line width (CD) of the development process.
  • the present disclosure provides a mask, an exposure apparatus, and an exposure method. Can improve the uniformity of product line width.
  • the mask provided by the present disclosure based on the above object includes a substrate and a plurality of opening patterns disposed on the substrate.
  • the substrate includes a first region and a second region.
  • the first region corresponds to a position at which the developer concentration is low when the target substrate is developed
  • the second region corresponds to a position at which the developer concentration is high when the target substrate is developed.
  • the light transmission amount of the opening pattern in the first region on the substrate is greater than the light transmission amount in the second region of the substrate, so that the light in the first region is more than the second region.
  • the transmission amount can compensate the line width in the product area corresponding to the second area, so that the consistency of the product line width is greater than the set value.
  • an opening width of the opening pattern of the first area is greater than an opening width of the opening pattern of the second area.
  • the present disclosure provides an exposure apparatus including a reticle including a substrate and a plurality of opening patterns disposed on the substrate.
  • the substrate includes a first region and a second region.
  • the first region corresponds to a position at which the developer concentration is low when the target substrate is developed
  • the second region corresponds to a position at which the developer concentration is high when the target substrate is developed.
  • the light transmission amount in the first region on the substrate is greater than the light transmission amount of the opening pattern in the second region of the substrate, so that the light transmission amount in the first region more than the second region can be in the product region corresponding to the second region
  • the line width is compensated, so that the product line width uniformity is greater than the set value.
  • an opening width of the opening pattern of the first area is greater than an opening width of the opening pattern of the second area.
  • the exposing device further includes:
  • a filter disposed on the opening pattern, wherein a light transmittance of the filter in the first region is greater than a light transmittance of the filter in the second region.
  • the exposing device further includes:
  • the amount of light projected by the light projection module to the first region is different from the amount of light projected to the second region, such that the amount of light transmitted through the first region on the substrate is greater than that in the second region of the substrate The amount of light transmitted through.
  • the substrate includes a third region and a fourth region.
  • the third region opening width of the substrate is greater than the fourth region opening width of the substrate; the light projection module projects a light intensity that is projected toward the third region to be less than a light intensity projected toward the fourth region.
  • an exposure method comprising the following steps:
  • the target substrate is exposed by using an exposure apparatus provided by any one of the embodiments of the present disclosure, the target substrate includes a fifth area and a sixth area, and the exposure amount received by the fifth area is greater than the sixth area of the target substrate is received The exposure amount; the fifth region corresponding to the first region of the mask substrate, and the sixth region corresponding to the second region of the mask.
  • the exposing method further includes:
  • the developing step develops the exposed target substrate.
  • the developing step specifically includes:
  • the target substrate is placed in a developing solution, and a distance between the fifth region of the target substrate and the horizontal plane of the developing solution is greater than a distance between the sixth region of the target substrate and the horizontal plane of the developing solution.
  • the mask, the exposure machine and the exposure method provided by the present disclosure can improve the mask or the exposure machine according to the phenomenon that the concentration of the developer is uneven during development, so that a part of the mask is made.
  • the light transmission amount of the area is larger than the light transmission amount of the other partial area, so that the target substrate is immersed in the developing solution for development during development, and the portion where the exposure amount is large corresponds to the position where the developer concentration is low, and the portion with less exposure amount Corresponding to the position where the developer concentration is high, thereby compensating for the product line width inconsistency caused by the oblique development on the target substrate; so that the product line width is increased in the area where the actual line width is smaller than the design line width; In areas where the line width is less than the design line width, the product line width is reduced.
  • the line width uniformity on the target substrate is further greater than a certain set value, thereby improving the consistency of the line width.
  • FIG. 1 is a schematic structural view of a mask according to an embodiment of the present disclosure
  • Figure 2 is a schematic view of oblique development during exposure and development
  • Figure 3 is a schematic view showing the exposure principle of the exposure machine
  • 4A is a schematic diagram showing a pattern line width distribution formed on a target substrate of the related art
  • FIG. 4B is a schematic diagram showing a pattern line width distribution formed on a target substrate according to an embodiment of the present disclosure.
  • the present disclosure first provides a reticle having a structure as shown in FIG. 1 including a substrate and a plurality of opening patterns 101 disposed on the substrate.
  • the substrate includes a first region 102 corresponding to a position at which the developer concentration is low when the target substrate is developed, and a second region 103 corresponding to a position at which the developer concentration is high when the target substrate is developed.
  • the light transmission amount of the opening pattern 101 in the first region 102 on the substrate is greater than the light transmission amount in the second region 103 of the substrate, so that the first region 102 is more than the first
  • the light transmission amount of the two regions 103 can compensate the line width in the product region corresponding to the second region 103, so that the uniformity of the product line width is greater than the set value.
  • the target substrate is caused by tilt development, uneven illumination of the exposure machine, and the like. That is, the line widths of the exposure patterns generated on the substrate of the target product are inconsistent, which leads to inconsistent graphic line widths on the product.
  • the substrate 201 when developing the target product substrate 201, the substrate 201 is not horizontally placed, but is inclined with respect to the horizontal direction, so that the developer that has participated in the development flows to the level of the substrate 201.
  • the lower end causes the developer concentration above the substrate 201 to change, and the developer concentration above the lower level of the substrate 201 decreases.
  • the line width of the one end of the substrate 201 having a lower horizontal height is smaller, and the line width of the one end of the substrate 201 having a higher level is larger.
  • FIG. 3 is a schematic diagram of the exposure principle of the color film substrate exposure machine in the related art.
  • the light projection module 301 of the exposure machine projects light, and the light passes through the opening pattern 3021 of the mask 302, and is irradiated onto the target substrate 303 so that the target substrate 303 is exposed.
  • the larger the line width of the opening pattern 3021 of the mask 302 the larger the line width of the pattern formed on the target substrate 303.
  • the amount of light transmitted through the opening pattern in different regions on the mask is different, so that when the mask is used for exposure, the exposure amount of the first region on the target substrate is large, and the exposure amount of the second region is small.
  • the portion where the target substrate exposure amount is large corresponds to the position where the developer concentration is low
  • the portion where the target substrate exposure amount is small corresponds to the position where the developer concentration is high, that is, the first region 102 and the development portion.
  • the position at which the developer concentration is low at the time of the target substrate corresponds to the position at which the developer concentration is high when the target substrate is developed. Therefore, the line width inconsistency caused by the inconsistency of different parts of the target substrate due to the tilt during development can be alleviated or eliminated, and the line width uniformity of the target substrate product can be improved.
  • the mask provided by the present disclosure can be applied to the production of all products in which exposure and development processes are present.
  • the uniformity of the line width may be any parameter that can reflect whether the line widths of different parts on the product are consistent.
  • the number of graphics that are qualified for the product line width is the ratio of the total number of graphics.
  • an opening width of the opening pattern of the first region is greater than an opening width of the opening pattern of the second region.
  • the larger the opening width of the opening pattern the larger the amount of light transmitted.
  • the opening width of the opening pattern can be determined by actual experimentation. First, the target substrate is exposed and developed using a reference mask having a uniform line width, and then measured according to the line width formed on the target substrate, and the reference is masked according to the ratio of the line width formed on the target substrate and the design line width. The opening pattern line width of the film plate is enlarged or reduced.
  • the filter may be disposed on the mask when the width of the opening pattern is not changed, so that the light passing through the opening of the opening pattern of the second region is reduced, thereby exposing
  • the intensity and the opening size are the same, the light transmission amount of the opening pattern of the first area is larger than the light transmission amount of the opening pattern of the second area.
  • the present disclosure provides an exposure apparatus including a mask, the mask including a substrate and a plurality of opening patterns disposed on the substrate, the substrate including a first area and a second area, wherein the first area
  • the second region corresponds to a position at which the developer concentration is high when the target substrate is developed
  • the second region corresponds to a position at which the developer concentration is high when the target substrate is developed.
  • the amount of light transmitted through the first region of the substrate is greater than the amount of light transmitted through the second region of the substrate, such that the amount of light transmitted through the second region in the first region enables the line width in the product region corresponding to the second region. Compensation, which in turn makes the product line width uniformity greater than the set value.
  • an opening width of the opening pattern of the first region is greater than an opening width of the opening pattern of the second region.
  • the exposure apparatus further includes:
  • a filter disposed on the opening pattern, wherein a light transmittance of the filter in the first region is greater than a light transmittance of the filter in the second region.
  • the exposure apparatus further includes:
  • a light projection module for projecting light; the amount of light projected by the light projection module to the first region is different from the amount of light projected to the second region, such that the amount of light transmitted through the first region on the substrate is greater than that in the second region of the substrate The amount of light transmitted through.
  • the projection module can be various projection light sources in the prior art.
  • the substrate includes a third region and a fourth region, a third region opening width of the substrate is greater than a fourth region opening width of the substrate; and the ray projection module is toward the third The intensity of the light projected by the area is less than the intensity of the light projected to the fourth area.
  • the third area and the fourth area may or may not correspond to the first area and the second area.
  • the exposure intensity of the exposure machine is inconsistent at different positions, for example, may be in a certain exposure In the light region, bright spots, dark spots, and the like appear, and in the areas of the mask plates corresponding to the areas where the exposure intensity is abnormal, such as bright spots or dark spots, the width of the mask opening pattern line width is widened or reduced correspondingly, so that the product line The width is compensated.
  • the mask pattern of the mask is calculated due to the change of the developer concentration.
  • the line width is compensated for the first difference, and the difference between the pattern line width formed on the target substrate and the design line width of the target substrate caused by the difference in exposure intensity is calculated as the mask line width of the mask pattern due to uneven exposure intensity Performing a second difference of compensation, and then calculating a compensation value that actually compensates for the opening pattern on the mask according to the sum of the first difference and the second difference, and determining that the compensation value is positive or negative according to the calculated compensation value should be expanded
  • the factors affecting the pattern line width formed on the target substrate mainly include the mask opening line width, the developer concentration, and the exposure intensity.
  • the larger the open line width of the mask the larger the line width of the pattern formed on the target substrate; the higher the developer concentration, the larger the pattern width formed on the target substrate; the higher the exposure intensity, the more the line width formed on the target substrate Big.
  • the line width of the opening pattern in the region where the developer concentration is low during the development process corresponding to the mask plate may be performed.
  • most exposure machines are provided with a plurality of side-by-side exposure light sources, and multiple exposure light sources simultaneously illuminate the target substrate through the mask for exposure. After changing the line width of the mask opening pattern, it may not be possible to make The line width formed on the target substrate is completely uniform.
  • the uniformity of the pattern line width formed on the target substrate can be improved by changing the exposure intensity of the different exposure light sources; specifically, the exposure light source corresponding to the area with a small line width on the target substrate in the case where the exposure intensity is uniform; The exposure intensity is increased for the exposure light source corresponding to the region where the line width is large on the target substrate in the case where the exposure intensity is uniform, and the exposure intensity is lowered.
  • the line widths of the existing mask pattern are uniform, and the line width uniformity formed on the target substrate is improved, and the width of the mask line is wider than that of the existing mask.
  • the line width of the mask opening pattern is enlarged or reduced.
  • the present disclosure provides an exposure method including the following steps:
  • the target substrate includes a fifth region and a sixth region, wherein the exposure amount received by the fifth region is greater than the exposure amount received by the sixth region of the target substrate; the fifth region and the first portion of the mask substrate Corresponding to the region, the sixth region corresponds to the second region of the mask.
  • the method further includes:
  • the developing step develops the exposed target substrate.
  • the developing step specifically includes:
  • the target substrate is placed in a developing solution, and a distance between the fifth region of the target substrate and the horizontal plane of the developing solution is greater than a distance between the sixth region of the target substrate and the horizontal plane of the developing solution.
  • the preferred embodiment of the present disclosure has an obvious effect of improving the line width uniformity of the pattern formed on the target substrate.
  • FIG. 4A In the schematic diagram of the pattern line width distribution formed on the target product of the related art as shown in FIG. 4A, it can be seen that the pattern line width uniformity formed on the target substrate of the related art is low, and the line width is uneven.
  • 4B is a schematic diagram showing the distribution of pattern line widths formed on a target substrate fabricated by using the preferred embodiment of the present disclosure. As can be seen from Figures 4A and 4B, with the embodiments of the present disclosure, the line width uniformity of the pattern formed on the target substrate is significantly improved.
  • the mask, the exposure machine and the exposure method provided by the present disclosure can improve the mask or the exposure machine according to the phenomenon that the concentration of the developer is uneven during development, so that a part of the mask is made.
  • the amount of light transmitted through the area is greater than the amount of light transmitted through the other part. Therefore, during development, the target substrate is immersed in the developer for development, and the portion having a large exposure amount corresponds to a position at which the developer concentration is low, and the portion having a small exposure amount corresponds to a position at which the developer concentration is high, thereby The product line width difference due to oblique development on the substrate is compensated.
  • the product line width is increased; meanwhile, in the area where the actual line width is smaller than the design line width, the product line width is reduced.
  • the line width uniformity on the target substrate is further greater than a certain set value, thereby improving the consistency of the line width.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

一种掩膜版、曝光装置及曝光方法。所述掩膜版，包括基板以及设置在基板上的多个开口图形(101)，所述基板包括第一区域(102)和第二区域(103)，所述第一区域(102)与显影目标基板时显影液浓度低的位置对应，所述第二区域(103)与显影目标基板时显影液浓度高的位置对应，在利用所述掩膜版对目标基板进行曝光时，基板上第一区域(102)中的开口图形(101)的光线透过量大于基板第二区域(103)中的光线透过量，使得第一区域(102)中多于第二区域(103)的光线透过量能够对第二区域(103)所对应的产品区域中的线宽进行补偿，进而使得产品线宽的一致度大于设定值。曝光装置包括所述掩膜版。曝光方法，采用所述曝光装置对目标基板进行曝光。

Description

一种掩膜版、曝光装置及曝光方法
相关申请的交叉引用
本申请主张在2015年9月25日在中国提交的中国专利申请号No.201510622624.1的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及液晶显示领域，尤其涉及一种掩膜版、曝光装置及曝光方法。
背景技术
彩色滤光片(Color Filter，CF)一般由黑矩阵(Black Matrix，BM)、着色层(Red Green Blue，RGB)、覆盖层(Over Coat，OC)/电极层(Indium-Tin Oxide，ITO)与支撑柱(Pillar Spacer，PS)等组件组成；其中BM、RGB、PS这些组件在生产时需要曝光和显影作业。影响曝光图形线宽的因素主要有曝光量的照度、显影液的电导率以及相应Mask的开口宽度。
显影过程中为倾斜显影，这会导致在显影过程中出现显影不均的情况。显影不均是由于在进行显影(Develop，Dev)过程中，玻璃基板(Glass Substrate)倾斜导致已参与显影的药液流动到玻璃基板的下部，在流动过程中变相稀释其他区域的显影液浓度，导致显影不均。同时，由于曝光机受中心光线影响，设备照度也存在偏移，也会影响该显影过程的线宽(Critical Dimension，CD)分布情况。
发明内容
有鉴于此，本公开提供一种掩膜版、曝光装置及曝光方法。能够提高产品线宽的均匀性。
基于上述目的本公开提供的掩膜版，包括基板以及设置在基板上的多个开口图形。所述基板包括第一区域和第二区域。所述第一区域与显影目标基板时显影液浓度低的位置对应，所述第二区域与显影目标基板时显影液浓度高的位置对应。在利用所述掩膜版对目标基板进行曝光时，基板上第一区域中的开口图形的光线透过量大于基板第二区域中的光线透过量，使得第一区域中多于第二区域的光线透过量能够对第二区域所对应的产品区域中的线宽进行补偿，进而使得产品线宽的一致度大于设定值。
可选的，所述第一区域的开口图形的开口宽度大于所述第二区域的开口图形的开口宽度。
同时，本公开提供一种曝光装置，包括掩膜版，所述掩膜版包括基板以及设置在基板上的多个开口图形。所述基板包括第一区域和第二区域。所述第一区域与显影目标基板时显影液浓度低的位置对应，所述第二区域与显影目标基板时显影液浓度高的位置对应。基板上第一区域中的光线透过量大于基板第二区域中的开口图形的光线透过量，使得第一区域中多于第二区域的光线透过量能够对第二区域所对应的产品区域中的线宽进行补偿，进而使得产品线宽的一致度大于设定值。
可选的，所述第一区域的开口图形的开口宽度大于所述第二区域的开口图形的开口宽度。
可选的，所述曝光装置还包括：
设置在开口图形上的滤光片，所述第一区域中滤光片的光线透过率大于所述第二区域中滤光片的光线透过率。
可选的，所述曝光装置还包括：
用于投射光线的光线投射模块；所述光线投射模块向第一区域投射的光线量与向第二区域投射的光线量不同，使得基板上第一区域中的光线透过量大于基板第二区域中的光线透过量。
可选的，所述基板包括第三区域和第四区域。所述基板的第三区域开口宽度大于所述基板的第四区域开口宽度；所述光线投射模块向所述第三区域投射的光线强度小于向所述第四区域投射的光线强度。
进一步，本公开提供一种曝光方法，包括如下步骤：
采用本公开任意一项实施例所提供的曝光装置对目标基板进行曝光，所述目标基板包括第五区域和第六区域，第五区域接收到的曝光量大于所述目标基板第六区域接收到的曝光量；所述第五区域与所述掩膜版基板的第一区域对应，所述第六区域与所述掩膜版的第二区域对应。
可选的，所述曝光方法还包括：
显影步骤，对曝光后的目标基板进行显影。
可选的，所述显影步骤具体包括：
将所述目标基板放置入显影液中，所述目标基板第五区域与所述显影液水平面的距离大于所述目标基板第六区域与所述显影液水平面的距离。
从上面所述可以看出，本公开提供的掩膜版、曝光机及曝光方法，能够根据显影时显影液的浓度不均的现象，对掩膜版或曝光机进行改进，使得掩膜版一部分区域的光线透过量大于另一部分区域的光线透过量，从而在显影时，将目标基板浸入显影液进行显影，曝光量较多的部分与显影液浓度低的位置相对应，曝光量较少的部分与显影液浓度高的位置相对应，从而对目标基板上因为倾斜显影而产生的产品线宽不一致进行补偿；使得在实际线宽小于设计线宽的区域中，产品线宽增加；同时使得在实际线宽小于设计线宽的区域中，产品线宽减少。从而实现了进而使得目标基板上的线宽一致度大于某一设定值，提高了线宽的一致性。
附图说明
图1为本公开实施例的掩膜版结构示意图；
图2为曝光显影过程中的倾斜显影示意图；
图3为曝光机曝光原理示意图；
图4A为相关技术的目标基板上形成的图形线宽分布示意图；
图4B为本公开实施例的目标基板上形成的图形线宽分布示意图。
具体实施方式
为使本公开要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。
本公开首先提供一种掩膜版，结构如图1所示，包括基板以及设置在基板上的多个开口图形101。所述基板包括第一区域102和第二区域103，其中，第一区域102与显影目标基板时显影液浓度低的位置对应，第二区域103与显影目标基板时显影液浓度高的位置对应。在利用所述掩膜版对目标基板进行曝光时，基板上第一区域102中的开口图形101的光线透过量大于基板第二区域103中的光线透过量，使得第一区域102中多于第二区域103的光线透过量能够对第二区域103所对应的产品区域中的线宽进行补偿，进而使得产品线宽的一致度大于设定值。
相关技术中，由于倾斜显影、曝光机照度不均匀等原因，导致目标基板， 即目标产品的基板上生成的曝光图形线宽不一致，进而导致产品上图形线宽不一致。如图2所示，相关技术中，对目标产品基板201进行显影时，基板201并非水平放置，而是相对于水平方向有所倾斜，导致已经参与过显影的显影液流动到基板201水平高度较低的一端，使得基板201上方的显影液浓度发生变化，并且基板201水平高度较低的一端上方的显影液浓度降低。
从而在相关技术中掩膜版上开口图形线宽一致的情况下，基板201水平高度较低的一端线宽较小，基板201水平高度较高的一端线宽较大。
目标产品上的图形线宽还与掩膜版的开口线宽有关，图3为相关技术中的彩膜基板曝光机曝光原理示意图。曝光机的光线投射模块301投射光线，光线穿过掩膜版302的开口图形3021，照射到目标基板303上，使得目标基板303被曝光。从图3中可以看出，掩膜版302的开口图形3021线宽越大，目标基板303上形成的图形的线宽就越大。
本公开中，掩膜版上不同区域中的开口图形的光线透过量不同，从而在使用掩膜版进行曝光时，可使得目标基板上第一区域的曝光量大、第二区域的曝光量小，在显影时将目标基板曝光量大的部位与显影液浓度低的位置对应，将目标基板曝光量小的部位与显影液浓度高的位置对应，也就是说，其中，第一区域102与显影目标基板时显影液浓度低的位置对应，第二区域103与显影目标基板时显影液浓度高的位置对应。因此，可以使得显影时由于倾斜导致目标基板不同部位高低不一致导致的线宽不一致现象得到减轻或消除，提高目标基板产品的图形线宽一致性。
本公开所提供的掩膜版，可应用于所有存在曝光和显影工序的产品的制作。
在本公开具体实施例中，所述线宽的一致度，可以是任意能够体现产品上不同部位线宽是否一致的参数。例如，产品线宽合格的图形数量占图形总数量的比值等。
在本公开一些实施例中，所述第一区域的开口图形的开口宽度大于所述第二区域的开口图形的开口宽度。在曝光强度一致的情况下，开口图形的开口宽度越大，光线透过量越大。
在本公开具体实施例中，开口图形的开口宽度可通过实际试验进行确定。 首先使用开口图形线宽一致的基准掩膜版对目标基板进行曝光显影，再根据目标基板上形成的图形线宽进行测量，根据目标基板上形成的图形线宽和设计线宽的比例将基准掩膜版的开口图形线宽进行放大或缩小。
在本公开的另一些具体实施例中，可在开口图形线宽不改变的情况下，在掩膜版上设置滤光片，使得通过第二区域的开口图形的开口的光线减少，从而在曝光强度和开口大小一致的情况下，第一区域的开口图形的光线透过量大于第二区域的开口图形的光线透过量。
同时，本公开提供一种曝光装置，包括掩膜版，所述掩膜版包括基板以及设置在基板上的多个开口图形，所述基板包括第一区域和第二区域，其中，第一区域与显影目标基板时显影液浓度低的位置对应，第二区域与显影目标基板时显影液浓度高的位置对应。基板上第一区域中的光线透过量大于基板第二区域中的光线透过量，使得第一区域中多于第二区域的光线透过量能够对第二区域所对应的产品区域中的线宽进行补偿，进而使得产品线宽的一致度大于设定值。
在本公开一些实施例中，所述第一区域的开口图形的开口宽度大于所述第二区域的开口图形的开口宽度。
在本公开一些实施例中，所述曝光装置还包括：
设置在开口图形上的滤光片，所述第一区域中滤光片的光线透过率大于所述第二区域中滤光片的光线透过率。
在本公开一些实施例中，所述曝光装置还包括：
用于投射光线的光线投射模块；所述光线投射模块向第一区域投射的光线量与向第二区域投射的光线量不同，使得基板上第一区域中的光线透过量大于基板第二区域中的光线透过量。其中，投射模块可以为现有技术中的各种投射光源。
在本公开一些实施例中，所述基板包括第三区域和第四区域，所述基板的第三区域开口宽度大于所述基板的第四区域开口宽度；所述光线投射模块向所述第三区域投射的光线强度小于向所述第四区域投射的光线强度。这里，所述第三区域和第四区域可能与第一区域和第二区域相对应也可能不对应。
在实际应用中，曝光机不同位置曝光强度不一致，例如，可能在某一曝 光区域中，出现亮点、暗点等，在这些亮点或暗点等曝光强度异常的区域所对应的掩膜版的区域，相应地将掩膜版开口图形线宽加宽或缩小，使得产品线宽得到补偿。
具体的，在较佳实施例中，首先根据显影液浓度不同导致的目标基板上所形成的图形线宽与目标基板的设计线宽之差计算出由于显影液浓度变化而对掩膜版开口图形线宽进行补偿的第一差值，并根据曝光强度不同导致的目标基板上所形成的图形线宽与目标基板的设计线宽之差计算由于曝光强度不均匀而对掩膜版开口图形线宽进行补偿的第二差值，然后根据第一差值和第二差值之和计算出实际应对掩膜版上开口图形进行补偿的补偿值，根据计算的补偿值为正或为负确定应当扩大掩膜版上的开口图形线宽或是缩小掩膜版上的开口图形线宽。
在进行显影曝光的过程中，对目标基板上形成的图形线宽产生影响的因素，主要包括掩膜版开口线宽、显影液浓度、曝光强度。掩膜版开口线宽越大，目标基板上形成的图形线宽越大；显影液浓度越高，目标基板上形成的图形宽度越大；曝光强度越高，目标基板上形成的图形线宽越大。
在本公开一种较佳实施例中，为了进一步提高目标基板上形成的图形线宽一致性，可将掩膜版上所对应的显影过程中显影液浓度低的区域中的开口图形线宽进行改变；同时大多数曝光机设置有多个并列的曝光光源，有多个曝光光源同时通过掩膜版照射目标基板进行曝光，对掩膜版开口图形的线宽进行改变后，可能并不能够使目标基板上形成的图形线宽完全一致。因此，可通过改变不同的曝光光源的曝光强度，对目标基板上形成的图形线宽一致性进行改善；具体的，在曝光强度一致的情况下目标基板上线宽较小的区域所对应的曝光光源，对其提高曝光强度；在曝光强度一致的情况下目标基板上线宽较大的区域所对应的曝光光源，对其降低曝光强度。具体的，在本公开较佳实施例中，现有的掩膜版开口图形的线宽一致，为保证目标基板上形成的图形线宽一致度提高，相对于现有的掩膜版线宽，对掩膜版开口图形的线宽进行扩大或缩小。
同时，本公开提供一种曝光方法，包括如下步骤：
采用本公开任意一项实施例所述的曝光装置对目标基板进行曝光，所述 目标基板包括第五区域和第六区域，其中，第五区域接收到的曝光量大于所述目标基板第六区域接收到的曝光量；所述第五区域与所述掩膜版基板的第一区域对应，所述第六区域与所述掩膜版的第二区域对应。
在本公开一些实施例中，还包括：
显影步骤，对曝光后的目标基板进行显影。
在本公开一些实施例中，所述显影步骤具体包括：
将所述目标基板放置入显影液中，所述目标基板第五区域与所述显影液水平面的距离大于所述目标基板第六区域与所述显影液水平面的距离。
经过实际生产制作过程证实，本公开较佳实施例对目标基板上形成的图形的线宽一致性改善效果明显。在如图4A所示的相关技术的目标产品上形成的图形线宽分布示意图中，可以看出，相关技术的目标基板上形成的图形线宽均一性较低，线宽不均匀。图4B为采用本公开较佳实施例所制作的目标基板上形成的图形线宽分布示意图。通过图4A和4B可以看出，通过本公开实施例，目标基板上形成的图形的线宽一致性得到了明显的改善。
从上面所述可以看出，本公开提供的掩膜版、曝光机及曝光方法，能够根据显影时显影液的浓度不均的现象，对掩膜版或曝光机进行改进，使得掩膜版一部分区域的光线透过量大于另一部分区域的光线透过量。从而，在显影时，将目标基板浸入显影液进行显影，曝光量较多的部分与显影液浓度低的位置相对应，曝光量较少的部分与显影液浓度高的位置相对应，从而对目标基板上因为倾斜显影而产生的产品线宽不一致进行补偿。因此，在实际线宽小于设计线宽的区域中，产品线宽增加；同时，在实际线宽小于设计线宽的区域中，产品线宽减少。从而实现了进而使得目标基板上的线宽一致度大于某一设定值，提高了线宽的一致性。
应当理解，本说明书所描述的多个实施例仅用于说明和解释本公开，并不用于限定本公开。并且在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互组合。
显然，本领域的技术人员可以对本公开进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (10)

  1. 一种掩膜版，包括基板以及设置在基板上的多个开口图形，其中，所述基板包括第一区域和第二区域，所述第一区域与显影目标基板时显影液浓度低的位置对应，所述第二区域与显影目标基板时显影液浓度高的位置对应，在利用所述掩膜版对目标基板进行曝光时，基板上第一区域中的开口图形的光线透过量大于基板第二区域中的光线透过量，使得第一区域中多于第二区域的光线透过量能够对第二区域所对应的产品区域中的线宽进行补偿，进而使得产品线宽的一致度大于设定值。
  2. 根据权利要求1所述的掩膜版，其中，所述第一区域的开口图形的开口宽度大于所述第二区域的开口图形的开口宽度。
  3. 一种曝光装置，包括掩膜版，所述掩膜版包括基板以及设置在基板上的多个开口图形，其中，所述基板包括第一区域和第二区域，所述第一区域与显影目标基板时显影液浓度低的位置对应，所述第二区域与显影目标基板时显影液浓度高的位置对应，基板上第一区域中的光线透过量大于基板第二区域中的开口图形的光线透过量，使得第一区域中多于第二区域的光线透过量能够对第二区域所对应的产品区域中的线宽进行补偿，进而使得产品线宽的一致度大于设定值。
  4. 根据权利要求3所述的曝光装置，其中，所述第一区域的开口图形的开口宽度大于所述第二区域的开口图形的开口宽度。
  5. 根据权利要求3所述的曝光装置，其中，所述曝光装置还包括：
    设置在开口图形上的滤光片，所述第一区域中滤光片的光线透过率大于所述第二区域中滤光片的光线透过率。
  6. 根据权利要求3所述的曝光装置，其中，所述曝光装置还包括：
    用于投射光线的光线投射模块；所述光线投射模块向第一区域投射的光线量与向第二区域投射的光线量不同，使得基板上第一区域中的光线透过量大于基板第二区域中的光线透过量。
  7. 根据权利要求6所述的曝光装置，其中，所述基板包括第三区域和第四区域，所述基板的第三区域开口宽度大于所述基板的第四区域开口宽度； 所述光线投射模块向所述第三区域投射的光线强度小于向所述第四区域投射的光线强度。
  8. 一种曝光方法，包括如下步骤：
    采用权利要求3-7中任意一项所述的曝光装置对目标基板进行曝光，所述目标基板包括第五区域和第六区域，第五区域接收到的曝光量大于所述目标基板第六区域接收到的曝光量；所述第五区域与所述掩膜版基板的第一区域对应，所述第六区域与所述掩膜版的第二区域对应。
  9. 根据权利要求8所述的曝光方法，还包括：
    显影步骤，对曝光后的目标基板进行显影。
  10. 根据权利要求9所述的曝光方法，其中，所述显影步骤具体包括：
    将所述目标基板放置入显影液中，所述目标基板第五区域与所述显影液水平面的距离大于所述目标基板第六区域与所述显影液水平面的距离。
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