WO2017041438A1 - 光掩模板和曝光系统 - Google Patents

光掩模板和曝光系统 Download PDF

Info

Publication number
WO2017041438A1
WO2017041438A1 PCT/CN2016/073843 CN2016073843W WO2017041438A1 WO 2017041438 A1 WO2017041438 A1 WO 2017041438A1 CN 2016073843 W CN2016073843 W CN 2016073843W WO 2017041438 A1 WO2017041438 A1 WO 2017041438A1
Authority
WO
WIPO (PCT)
Prior art keywords
pattern
strip
shaped body
photomask according
columnar portion
Prior art date
Application number
PCT/CN2016/073843
Other languages
English (en)
French (fr)
Inventor
李承敃
范真瑞
张文轩
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/104,769 priority Critical patent/US9978595B2/en
Publication of WO2017041438A1 publication Critical patent/WO2017041438A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0988—Diaphragms, spatial filters, masks for removing or filtering a part of the beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G03F1/86—Inspecting by charged particle beam [CPB]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing

Definitions

  • the invention belongs to the field of semiconductor technology, and in particular to a photomask and an exposure system.
  • the exposure process is one of the important fabrication processes in the production of semiconductor devices.
  • the process accurately transfers the pattern on the mask onto the photoresist by photochemical reaction.
  • the corresponding material film layer such as an indium tin oxide layer, etc.
  • the photoresist is coated on the material film layer, and the fine pattern on the mask plate is transferred onto the photoresist by exposing and developing the photoresist, and then the material film layer is protected by the photoresist.
  • the etching process ultimately forms a pattern of corresponding layers in the array substrate.
  • Figure 1 shows a pattern of patterns in a conventional photomask for forming a line pattern, which is a strip pattern.
  • the pattern of the pattern on the photomask is parsed and reproduced on the patterning layer by an exposure machine.
  • the resolution of the exposure machine can be calculated by the Rayleigh formula:
  • R is the resolution
  • K1 is the process factor, which can be a fixed value in the range of 0.6-0.8
  • ⁇ is the wavelength of the exposure light
  • NA numbererical aperture; numerical aperture indicates the ability to collect the diffracted light, which is the characteristic optics of the exposure machine.
  • DOF Deep Of Focus
  • the focus is on the point at which the best image appears.
  • the depth of focus is a range near the focus, and the image remains continuously clear in the depth of focus; K2 is the process factor.
  • the resolution R decreases as the NA value increases (the smaller the resolution R is, the higher the resolution of the exposure machine), and the depth of focus decreases rapidly as the NA increases.
  • the Rayleigh formula to obtain higher resolution, it is necessary to sacrifice the depth of focus.
  • the smaller the depth of focus the smaller the margin of the process, the higher the process requirements, and therefore the need for the device. Good focus depth control.
  • the line width of the micro pattern reaches or exceeds the resolution of the exposure apparatus (ie, the line width of the micro pattern is equal to or even less than the resolution R), after exposure by the exposure machine
  • the distortion of the image is increased, resulting in a uniformity in line width and deterioration in morphology, which in turn leads to poor exposure processes and degrades the quality of the semiconductor device.
  • the technical problem to be solved by the present invention is to provide a photomask and an exposure system in view of the above-mentioned deficiencies in the prior art.
  • the pattern formed by exposure using the photomask and the exposure system has a high degree of fineness, and the formed line pattern has high precision.
  • a photomask comprising a pattern pattern for forming a pattern of patterns, the pattern pattern comprising a strip-shaped body for forming a line pattern, wherein the pattern pattern is further included
  • the auxiliary patterning pattern unit disposed on both sides of the strip-shaped body, the auxiliary patterning unit can adjust and compensate the light direction and the light intensity during the exposure.
  • the auxiliary patterning graphic unit comprises a toothed wing portion, and the toothed wing portion is disposed in contact with the strip body.
  • the toothed wing portion includes a first wing portion and a second wing portion respectively disposed on two sides of the strip-shaped body and symmetrically disposed with respect to the strip-shaped body.
  • the first wing portion is spread over one side of the strip-shaped body, and the second wing portion is spread over the other side of the strip-shaped body.
  • the first wing portion and the second wing portion respectively include a plurality of protrusions having the same shape and size, and a bottom edge of each of the protrusions coincides with a side edge of the strip body The highest point is opposite to the side of the strip-shaped body.
  • the shape of the protrusion is a triangle, a dome chamfered triangle, a semicircle, an ellipse or a fan, and the apex angle of the triangle or the chamfered triangle ranges from 30° to 120 °.
  • the ratio of the width of the strip body to the width of the first wing or the second wing is 1:1 to 3:1.
  • the auxiliary patterning pattern unit comprises a columnar portion, and the columnar portion is disposed separately from the strip-shaped body.
  • the column portion includes a first column portion and a second column portion symmetrically disposed with respect to the strip body, and a bottom portion and a top portion of the first column portion and the second column portion respectively correspond to the strip portion
  • the bottom and top of the body are substantially flush.
  • the ratio of the width of the strip-shaped body to the width of the first columnar portion and/or the second columnar portion ranges from 1:1 to 9:1.
  • a ratio of a width of the toothed wing portion, a gap width between the toothed wing portion and the first columnar portion, and a width of the first columnar portion is 1:1:1 Until 3:1:1.
  • the columnar portion is disposed outside the toothed wing and separated from the toothed wing, and the toothed wing portion on the same side of the strip body and the toothed shape
  • the gap width between the wings is equal to the width of the columnar portion on the side.
  • the composition pattern is a light transmissive pattern or a semi-transparent pattern, or the composition pattern is an opaque pattern.
  • the patterning pattern includes a plurality of strip-shaped bodies, and the adjacent column-shaped bodies share the columnar portion therebetween.
  • the photomask further includes a transparent substrate and a protective layer, the patterned pattern being formed between the transparent substrate and the protective layer.
  • An exposure system comprising any of the photomasks described above.
  • the invention has the beneficial effects that the photomask plate improves the exposure machine to the micro pattern (especially the micro pattern that reaches or exceeds the limit resolution of the exposure machine) by providing an auxiliary patterning pattern unit on both sides of the strip body for forming the line pattern.
  • the resolution is improved by the design of the photomask plate under the condition that the existing equipment is not modified, and the high-resolution (High PPI) characteristic of the exposure machine is fully utilized.
  • the improved fineness of the formed pattern is advantageous for improving the pixel aperture ratio and the light transmittance, thereby making it possible to manufacture a high-resolution display product.
  • FIG. 1 is a schematic view of a patterned pattern for forming a straight line pattern in a conventional photomask
  • FIG. 2 is a schematic view showing a pattern of a photomask according to a first embodiment of the present invention
  • Figure 3 shows the size identification of the various parts of the composition pattern of Figure 2;
  • FIG. 4 is a partial view of a photomask including a plurality of pattern patterns shown in FIG. 2;
  • FIG. 5 is a schematic structural diagram of a photomask according to an embodiment of the present invention.
  • Figure 6 is a cross-sectional view of the photomask plate of Figure 5 taken along line EE;
  • Figure 7 is a schematic view showing a pattern of a photomask according to a second embodiment of the present invention.
  • FIG. 8 is a schematic view showing a pattern of a photomask plate according to a third embodiment of the present invention.
  • the resolution of the exposure machine is the ability to reproduce the subtle parts of the original, and refers to the minimum line width (or spacing) that can be resolved (or resolved) when the exposure machine is exposed.
  • the resolution of the exposure machine is generally fixed when the device is assembled, so the resolution of the exposure machine is constant during exposure with the exposure machine.
  • the fineness of the pattern formed by the exposure process is related to the device parameters of the exposure machine and the process parameters of the exposure process, but since the device parameters of the exposure machine are fixed and cannot be changed during the process, the inventors of the present invention
  • the path improves the accuracy of the pattern by changing the process parameters of the exposure process.
  • the technical idea of the present invention is to improve the composition pattern in the photomask to balance the fineness and depth of the pattern. Degree, that is, to further improve the imaging performance of the device under the condition that the depth of focus is unchanged (ie, without modifying the device), and obtain better resolution, thereby achieving the purpose of both.
  • the present embodiment provides a photomask which can improve the fineness of a patterned pattern formed by exposure thereof, thereby improving the precision of the formed straight line pattern.
  • the photomask plate is provided with a pattern pattern for forming a pattern of patterns, the pattern pattern including a strip-shaped body 11 for forming a straight line pattern and an auxiliary patterning pattern unit disposed on both sides of the strip-shaped body 11.
  • the auxiliary patterning unit can adjust and compensate the light direction and the light intensity during the exposure process, wherein the strip body 11 is used to form an actual line pattern, the length and thickness of which are related to the exposure machine used, but generally The actual straight line pattern is equivalent.
  • the auxiliary patterning unit includes a toothed wing portion 12 and a columnar portion 13, and the toothed wing portion 12 is disposed in contact with the strip body 11, and the columnar portion 13 is disposed apart from the strip body 11.
  • the auxiliary patterning pattern unit includes the toothed wing portions 12 and the columnar portion 13 which are disposed on both sides of the strip-shaped body 11, and the toothed wing portion 12 and the columnar portion 13 are each symmetrical with respect to the strip-shaped body 11. Settings.
  • the toothed wing portion 12 includes a first wing portion and a second wing portion that are disposed on both sides of the strip-shaped body 11 and symmetrically disposed with respect to the strip-shaped body 11.
  • the first wing portion and the second wing portion respectively include a plurality of protrusions 121 having the same shape and size, and the bottom edge of each of the protrusions 121 coincides with the side edges of the strip-shaped body 11 to the high point 122 and the strip-shaped body 11 The sides are opposite.
  • the plurality of protrusions 121 distributed on each side of the strip-shaped body 11 may be connected to each other. For example, in the example shown in FIG.
  • each of the side edges of the strip-shaped body 11 is evenly distributed with a plurality of protrusions 121 connected to each other, each of the protrusions 121 being an equilateral triangle, and one of the protrusions 121
  • the sides ie, the bottom edges
  • the sides of the adjacent protrusions 121 that coincide with the sides of the strip-shaped body 11 are connected (ie, the bottom edges are connected) so as to be distributed over the strip-shaped body
  • a plurality of protrusions 121 on each side of the 11 are connected to each other.
  • the structure of the toothed wing 12 shown in FIG. 2 is merely exemplary.
  • a plurality of protrusions 12 distributed on each side of the strip-shaped body 11 can be flexibly set according to actual conditions, which is not limited herein.
  • the plurality of protrusions 121 distributed on each side of the strip-shaped body 11 may also be spaced apart from each other (not shown).
  • the ratio of the width of the strip main body 11 to the width of the first (or second) wing portion that is, the ratio of the width of the strip main body 11 to the height of the bottom point of the protrusion 121 to the bottom point of the protrusion 121 may be 1:1 to 3 :1. In one example, the ratio of the width of the strip-like body 11 to the height of the bottom point of the protrusion 121 to the bottom of the height 121 is 2:1.
  • the shape of the protrusion 121 may be a triangle, a dome chamfered triangle, a semicircle, an ellipse or a sector. If the shape of the protrusion 121 is a triangle or a dome chamfered triangle, the apex angle of the triangle or dome chamfered triangle ranges from 30° to 120°. For example, the apex angle of the triangle can be 80°. It should be understood here that in the photomask plate in this embodiment, the shape of the protrusions 121 may be set according to the precision of the line pattern to be formed, but is not limited to the above shape, and the triangular protrusions 121 in FIG. It is merely an example and not a limitation.
  • the columnar portion 13 is provided outside the toothed wing portion 12 and separated from the toothed wing portion 12, and the columnar portion 13 includes a first columnar portion and a second columnar portion that are symmetrically disposed with respect to the strip-shaped body 11, and the first columnar portion And the bottom and the top of the second column portion are substantially flush with the bottom and the top of the strip body 11, respectively.
  • FIG. 4 is a partial view of a pattern of a photomask including a plurality of pattern patterns shown in FIG.
  • each strip-shaped body 11 is used to form an independent straight line pattern, and by abutting the toothed wing portion 12 and the columnar portion 13 on both sides of the strip-shaped body 11, a plurality of straight lines with higher precision can be obtained.
  • the plurality of straight line patterns in FIG. 4 may be a plurality of gate lines arranged in parallel or a plurality of data lines arranged in parallel.
  • the adjacent strip bodies 11 may be shared.
  • the ratio of the width of the toothed wing portion on the same side of the strip-shaped body 11 to the width of the columnar portion that is, the width of the first (or second) wing portion and the first (or second)
  • the ratio of the width of the columnar portion is 1:1 to 3:1
  • the width B of the first wing portion, the gap width C between the first wing portion and the first columnar portion, and the width D of the first columnar portion are 2:1:1.
  • the width of the second wing portion, the gap width between the second wing portion and the second columnar shape, and the width of the second columnar portion are known due to the symmetry of the first columnar portion and the second columnar portion.
  • the ratio is also 2:1:1.
  • the gap width C can be adjusted according to the graphic resolution and depth of focus requirements. In general, the larger the gap width C, the better the resolution of the pattern pattern and the better the depth of focus.
  • the width A of the strip body 11 the width B of the first (or second) wing: the gap width C between the first (or second) wing and the first (or second) column:
  • the width (D) of the first (or second) columnar shape may be 4:2:1:1, and Table 1 shows a portion of the optional width value and the angle of the wing away from the corner of the strip-like body 11.
  • a photoresist is usually used as a coating, and then a specific pattern is formed under the photoresist coating by an exposure process, a development process, and an etching process.
  • the photoresist includes a negative photoresist and a positive photoresist.
  • the light transmissive property of the patterned pattern in the photomask can be set according to the chemical reaction mechanism and development principle of the photoresist used in the exposure process.
  • the strip-shaped body 11, the toothed wing portion 12, and the columnar portion 13 are both light transmissive patterns or semi-transmissive patterns, or the strip-shaped body 11, the toothed wing portion 12, and the columnar portion 13 are Opaque graphics.
  • the strip-shaped body 11, the toothed wing portion 12 and the columnar portion 13 are each provided with a light-transmitting pattern to retain the negative photoresist of the strip-like body 11, the tooth-like wing portion 12 and the corresponding portion of the columnar portion 13, and further retain The actual patterning pattern under the negative photoresist; for the positive photoresist, since it becomes a soluble substance after being irradiated, it can be removed by development, and thus the strip-shaped body 11, the toothed wing portion 12, and the columnar portion 13 They are all disposed as opaque patterns to retain the positive photoresist of the corresponding regions of the strip body 11, the toothed wing 12 and the columnar portion 13, further retaining the actual patterning pattern under the positive photoresist.
  • the photomask plate provided in this embodiment can be used to form strip-shaped gate line patterns and/or strip-shaped data line patterns.
  • the pattern pattern in the photomask includes strip-shaped bodies 11 for forming gate lines or strip-shaped bodies 11 for forming data lines, and is located on both sides of the strip-shaped body 11 and symmetric about the strip-shaped body 11.
  • Auxiliary composition graphics unit According to the forming process of the gate lines and the data lines in the actual application, the same photomask plate provided by the present invention can be used to form the gate lines and the data lines, and the two different photomask plates provided by the present invention can also be used to respectively form the gate lines. And data lines, here is not limited.
  • the pattern pattern in the photomask includes: a gate line-like body 11 for forming a gate line and a data line-like body 11 for forming a data line, distributed on both sides of the gate line-like body 11 and related Auxiliary patterning elements that are symmetrical with respect to the line-like body 11 and/or auxiliary patterning elements that are distributed on both sides of the data line-like body 11 and are symmetrical about the data line-like body 11.
  • the curve may be considered to be a straight line to some extent within a sufficiently small length. Therefore, the method for using the auxiliary patterned graphic unit to improve the resolution of the micro pattern in the photomask plate provided in this embodiment is applicable to any line shape, and the specific description of how the line pattern achieves the accuracy compensation is merely an example and is not limited.
  • the photomask generally includes a transparent substrate 21, a protective layer 23, and a pattern layer 22 between the transparent substrate 21 and the protective layer 23, and the pattern pattern (including the strip body and the auxiliary patterning pattern unit) forms the pattern layer 22.
  • the photomask comprises a transparent substrate 21, a pattern layer 22 and a protective layer 23 in sequence.
  • the protective layer 23 is formed integrally with the transparent substrate 21 through the film frame 24, wherein the graphic layer 22 can be formed.
  • the pattern layer 22 may be formed of an opaque material using an opaque material (the opaque structure here)
  • the material is usually chrome
  • the portion other than the pattern layer 22 is a void or a light-transmitting structure formed by using a light-transmitting material; of course, the pattern layer 22 may also be a void or a light-transmitting structure formed by using a light-transmitting material, and the pattern layer 22
  • the other part may be an opaque structure formed using an opaque material.
  • the auxiliary tooth-shaped wing portion and the columnar portion are provided on both sides of the strip-shaped body for forming the straight line pattern, and the composition of the exposure machine is not limited by the resolution of the resolution of the exposure machine in consideration of the resolution of the exposure machine.
  • the auxiliary pattern on both sides of the strip body to ensure the resolution of the strip body composition; by further utilizing light diffraction, the exposure of the exposure machine to the micropattern exposure can be increased by 5% to 10%; Meanwhile, in the display substrate, the smaller the line width is, the smaller the area occupied by the corresponding pixel circuit (for example, the opaque thin film transistor portion) in the pixel region is, the larger the effective display area is, and the light transmitting portion is improved.
  • the pixel aperture ratio and the light transmittance can be improved, and the high-resolution (High PPI) characteristics of the exposure machine can be fully utilized, and the fineness of the formed pattern can be improved, thereby making it possible to manufacture a high-resolution display product.
  • the present embodiment provides a photomask which is different from the first embodiment in that only the toothed wings 12 are provided on both sides of the strip body 11 in the photomask of the present embodiment.
  • the auxiliary patterning pattern unit includes a toothed wing portion 12, and the toothed wing portion 12 is disposed in contact with the strip body 11.
  • the shape and structural parameters of the toothed wings in the photomask can refer to the shape and structural parameters of the toothed wings in the photomask in the first embodiment, which will not be described in detail herein.
  • the resolution of the micro-pattern of the exposure machine is improved, and the device is passed without modifying the existing equipment.
  • the design of the photomask is used to improve the imaging performance, and the high-resolution (High PPI) characteristics of the exposure machine are fully utilized, which helps to improve the pixel aperture ratio and the light transmittance, so that the fineness of the formed pattern is improved, thereby making the manufacturing high.
  • the resolution display product is possible.
  • the present embodiment provides a photomask which is different from the first embodiment in that only the columnar portion 13 is provided on both sides of the strip-shaped body 11 in the photomask according to the present embodiment.
  • the columnar portion 13 is disposed outside the strip-shaped body 11 and is disposed apart from the strip-shaped body 11 , and the columnar portion 13 includes a first columnar portion and a second column-shaped portion symmetrically disposed with respect to the strip-shaped body 11 , and The bottom and the top of the columnar portion and the second columnar portion are substantially flush with the bottom and the top of the strip-shaped body, respectively, and the ratio of the width of the strip-shaped body to the width of the first columnar portion and/or the second columnar portion is 1: 1 to 9:1.
  • the shape and structural parameters of the columnar portion in the photomask plate can also refer to the shape and structural parameters of the columnar portion in the photomask plate in the first embodiment, which will not be described in detail herein.
  • the resolution of the micro-pattern of the exposure machine is improved, and the light is passed through without modifying the existing equipment.
  • the reticle is designed to improve the imaging performance, and the high-resolution (High PPI) characteristics of the exposure machine are fully utilized, so that the fineness of the formed pattern is improved, which contributes to improvement of pixel aperture ratio and light transmittance, thereby making high resolution.
  • the display product is possible.
  • the photomask plates provided in the first embodiment to the third embodiment are suitable for forming a micro pattern by using an exposure process in a process of forming a semiconductor structure by a patterning process, and are particularly suitable for preparing a liquid crystal display (LCD) device and an organic light emitting diode.
  • LCD liquid crystal display
  • OLED organic light emitting diode
  • the present embodiment provides an exposure system including any one of the first embodiment to the third embodiment.
  • the exposure system can improve the fineness of the pattern of the pattern, thereby improving the quality of the formed semiconductor device.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

一种光掩模板和一种曝光系统。该光掩模板设置有用于形成成图图案的构图图形，所述构图图形包括用于形成直线图案的条状主体（11），其中，所述构图图形还包括在所述条状主体（11）的两侧设置的辅助构图图形单元，所述辅助构图图形单元能对曝光过程中的光线方向和光强强度进行调整和补偿。该光掩模板使得采用其进行曝光而形成的成图图案的精细度提高，从而提高形成的直线图案的精度。

Description

光掩模板和曝光系统 技术领域
本发明属于半导体技术领域，具体涉及光掩模板和曝光系统。
背景技术
曝光工艺是半导体器件生产过程中重要的制作工艺之一，该工艺通过光化学反应精确地将掩模板上的图形转写到光刻胶(Photoresist)上。例如，在显示装置的阵列基板(其中包括薄膜晶体管TFT，全称Thin Film Transistor)的制作过程中，首先在衬底上涂覆或溅射相应的材料膜层(比如氧化铟锡层等)，然后在材料膜层上涂覆光刻胶，通过对光刻胶进行曝光、显影等工艺，将掩模板上的微细图形转移至光刻胶上，然后在光刻胶的保护下对材料膜层进行刻蚀加工，最终形成阵列基板中的相应层的图案。
曝光工艺中使用的一种重要的媒介为光掩模板(photo mask)，图1所示为现有光掩模板中用于形成直线图案的构图图形，其为条状图形。在曝光工艺中，通过曝光机将光掩模板上的构图图形解析并复制在构图层上。可通过瑞利公式来计算曝光机的解像力R：
R＝K1*λ/NA
DOF＝K2*λ/(NA)2
其中：R为解像力；K1为工艺因子，可以为0.6-0.8范围内的一固定值；λ为曝光光线波长；NA(numerical aperture；数值孔径)表示收集衍射光的能力，为曝光机的特征光学参数之一；
DOF(Deep Of Focus)为焦点深度，简称焦深。焦点是出现最佳图像的点，焦深是焦点附近的一个范围，在焦深范围内图像连续地保持清晰；K2为工艺因子。
可见解像力R随着NA值的增大而减小(解像力R越小，曝光机的解像力越高)，而焦点深度则随着NA的增大而迅速减小。根据瑞利公式可知，要获得更高解像力，则需以牺牲焦点深度为代价，然而焦点深度越小，工艺的裕量(margin)越小，对工艺要求越高，因此对设备而言需要更好的焦点深度控制手段。
在现有的曝光工艺中，由于受到曝光机的解像力限制，当微型图案线宽达到或超过曝光机设备的解像力(即，微型图案线宽等于甚至小于解像力R)时，经过曝光机曝光后的成像的失真度增加，导致线宽均一度及形貌恶化，进而导致曝光工艺不良，降低半导体器件的品质。
发明内容
本发明所要解决的技术问题是针对现有技术中存在的上述不足，提供一种光掩模板和一种曝光系统。通过采用该光掩模板和曝光系统曝光形成的成图图案具有较高的精细度，并且形成的直线图案具有较高的精度。
根据本发明的一个方面，提供一种光掩模板，其包括用于形成成图图案的构图图形，所述构图图形包括用于形成直线图案的条状主体，其中，所述构图图形还包括在所述条状主体的两侧设置的辅助构图图形单元，所述辅助构图图形单元能对曝光过程中的光线方向和光线强度进行调整和补偿。
可选的是，所述辅助构图图形单元包括齿状翼部，所述齿状翼部与所述条状主体相接设置。
可选的是，所述齿状翼部包括分别分布在所述条状主体的两侧且关于所述条状主体对称设置的第一翼部和第二翼部。
可选的是，所述第一翼部遍布所述条状主体的一侧，所述第二翼部遍布所述条状主体的另一侧。
可选的是，所述第一翼部和所述第二翼部分别包括形状和大小均相同的多个凸起，每个所述凸起的底边与所述条状主体的侧边重合，至高点与所述条状主体的侧边相对。
可选的是，所述凸起的形状为三角形、圆顶倒角三角形、半圆形、椭圆形或扇形，所述三角形或所述圆顶倒角三角形的顶角的范围为30°-120°。
可选的是，所述条状主体的宽度与所述第一翼部或所述第二翼部的宽度的比值为1:1至3:1。
可选的是，所述辅助构图图形单元包括柱状部，所述柱状部与所述条状主体分离设置。
可选的是，所述柱状部包括关于所述条状主体对称设置的第一柱状部和第二柱状部，且所述第一柱状部和第二柱状部的底部与顶部分别与所述条状主体的底部和顶部大致平齐。
可选的是，所述条状主体的宽度与所述第一柱状部和/或第二柱状部的宽度的比值范围为1：1至9：1。
可选的是，所述齿形翼部的宽度、所述齿形翼部与所述第一柱状部之间的间隙宽度、所述第一柱状部的宽度的比值范围为1:1:1至3：1：1。
可选的是，所述柱状部设置于所述齿状翼部外侧、且与所述齿状翼部分离，并且位于所述条状主体同侧的所述齿形翼部与所述齿状翼部之间的间隙宽度等于位于该侧的柱状部的宽度。
可选的是，所述构图图形为透光图形或半透光图形，或者，所述构图图形为不透光图形。
可选的是，所述构图图形包括多个条状主体，并且相邻的所述条状主体之间共用位于二者之间的所述柱状部。
可选的是，所述光掩模板还包括透明衬底和保护层，所述构图图形形成在所述透明衬底与所述保护层之间。
一种曝光系统，包括上述的任一种光掩模板。
本发明的有益效果是：该光掩模板通过在用于形成直线图案的条状主体两侧设置辅助构图图形单元，提高曝光机对微型图案(尤其是达到或超过曝光机极限解像力的微型图案)的解析度，在对现有设备不进行改造的条件下，通过对光掩模板的设计来改善成像性能，充分发挥了曝光机高解析度(High PPI)特性，使得 形成的图案的精细度提高，有利于改善像素开口率及透光率，从而使得制造高解析度的显示产品成为可能。
附图说明
图1为现有光掩模板中用于形成直线图案的构图图形的示意图；
图2为本发明的第一实施例提供的光掩模板的构图图形的示意图；
图3示出了图2中构图图形的各个部分的尺寸标识；
图4为包括多个图2所示构图图形的光掩模板的局部图；
图5为本发明实施例提供的光掩模板的结构示意图；
图6为图5中光掩模板沿EE线的剖面图；
图7为本发明的第二实施例提供的光掩模板的构图图形的示意图；以及
图8为本发明的第三实施例提供的光掩模板的构图图形的示意图。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明的光掩模板和曝光系统作进一步详细描述。
曝光机的解像力也称分辨力，是再现被摄原件细微部分的能力，指曝光机曝光时能分辨(或解像)的最小线宽(或间距)。曝光机的解像力一般在设备组装时已固定，所以在利用曝光机进行曝光的过程中，曝光机的解像力是不变的。通过曝光工艺形成的成图图案的精细度与曝光机的设备参数和曝光工艺的工艺参数有关，但由于曝光机的设备参数是固定的，在工艺过程中无法改变，因此本发明发明人另辟路径，通过改变曝光工艺的工艺参数来对成图图案的精度进行改进。具体地，本发明的技术构思在于：对光掩模板中的构图图形进行改进来兼顾图案的精细度与焦点深 度，即在维持焦点深度不变(即，不改造设备)的条件下进一步改善设备成像性能，获得更佳的解像力，从而达到两者兼顾的目的。
第一实施例
本实施例提供一种光掩模板，利用该光掩模板能够提高采用其进行曝光而形成的成图图案的精细度，从而提高形成的直线图案的精度。
如图2所示，该光掩模板设置有用于形成成图图案的构图图形，该构图图形包括用于形成直线图案的条状主体11以及在条状主体11的两侧设置的辅助构图图形单元，辅助构图图形单元能对曝光过程中的光线方向和光线强度进行调整和补偿，其中，条状主体11用于形成实际的直线图案，其长短和粗细与所采用的曝光机相关，但一般与实际的直线图案相当。
具体的，辅助构图图形单元包括齿状翼部12和柱状部13，齿状翼部12与条状主体11相接设置，柱状部13与条状主体11分离设置。在图2所示的示例中，辅助构图图形单元包括设置在条状主体11两侧的齿状翼部12以及柱状部13，齿状翼部12以及柱状部13均相对于条状主体11对称设置。
该实施例中，齿状翼部12包括遍布在条状主体11的两侧且关于条状主体11对称设置的第一翼部和第二翼部。第一翼部和第二翼部分别包括形状和大小均相同的多个凸起121，每个凸起121的底边与条状主体11的侧边重合，至高点122与条状主体11的侧边相对。这里，分布在条状主体11的每一侧的多个凸起121可以相互连接。例如，在图2所示的示例中，条状主体11的每条侧边上均匀分布有相互连接的多个凸起121，每个凸起121为一个等边三角形，各个凸起121的一条边(即，底边)与条状主体11的侧边重合，且相邻凸起121的与条状主体11的侧边重合的边相连(即，底边相连)，从而分布在条状主体11的每侧的多个凸起121相互连接。当然，图2所示的齿状翼部12的结构仅为示例性的而 并非限制性的，可根据实际情况来灵活设置分布在条状主体11的每一侧的多个凸起12，这里不做限定。例如，分布在条状主体11的每一侧的多个凸起121也可以相互间隔设置(未示出)。
条状主体11的宽度与第一(或第二)翼部的宽度的比值，也即条状主体11的宽度与凸起121的至高点122到底边的高度的比值可以为1:1至3:1。在一个示例中，条状主体11的宽度与凸起121的至高点122到底边的高度的比值为2:1。
凸起121的形状可以为三角形、圆顶倒角三角形、半圆形、椭圆形或扇形。如果凸起121的形状为三角形或圆顶倒角三角形，则该三角形或圆顶倒角三角形的顶角角度范围为30°至120°。例如，三角形的顶角角度可以为80°。这里应该理解的是，本实施例中的光掩模板中，凸起121的形状可根据待形成直线图案的精度来进行设置，可选但不限于上述形状，图2中的三角形的凸起121仅为一种示例而非限定。
另外，柱状部13设置于齿状翼部12外侧、且与齿状翼部12分离，柱状部13包括关于条状主体11对称设置的第一柱状部和第二柱状部，且第一柱状部和第二柱状部的底部与顶部分别与条状主体11的底部和顶部大致平齐。
如图4所示为包括多个图2所示构图图形的光掩模板的构图图形的局部图。如图4所示，每一条状主体11用于形成一条独立的直线图案，通过辅以位于条状主体11两侧的齿状翼部12和柱状部13，可以获得精度更高的多条直线图案。图4中的多条直线图案可以为平行排列的多条栅线或平行排列的多条数据线。
当成图图案比较密集时，为了减少光掩模板中构图图形中的辅助构图图形单元的图案密集度、保证曝光工艺中的精确度，可选地，相邻条状主体11可以共用位于二者之间的柱状部13。也即，相邻的两条状主体11可共用位于二者之间的第一柱状部或第二柱状部，以在保证较佳的成图图案的前提下简化构图图形的密集度。
可选的是，位于条状主体11同侧的齿形翼部的宽度与柱状部的宽度的比值，即，第一(或第二)翼部的宽度与第一(或第二) 柱状部的宽度的比值为1:1至3:1，并且位于条状主体11同侧的齿形翼部与柱状部之间的间隙宽度与该柱状部的宽度相等，即，第一(或第二)翼部与第一(或第二)柱状部之间的间隙宽度等于第一(或第二)柱状部的宽度。在图3所示的示例中，第一翼部的宽度B、第一翼部与第一柱状部之间的间隙宽度C、第一柱状部的宽度D的比值为2:1:1。此时，容易理解的是，由于第一柱状部和第二柱状部的对称性，可知第二翼部的宽度、第二翼部与第二柱状之间的间隙宽度、第二柱状部的宽度的比值也为2:1:1。
间隙宽度C可根据图形解像力和焦点深度需求进行调整。通常情况下，间隙宽度C越大，成图图案解像力越好，焦点深度越好。可选地，条状主体11的宽度A：第一(或第二)翼部的宽度B：第一(或第二)翼部与第一(或第二)柱状之间的间隙宽度C：第一(或第二)柱状的宽度D可以为4:2:1:1，表1示出了部分可选的宽度值及翼部的远离条状主体11的角的角度。
表1
A/μm B/μm C/μm D/μm 角度/°
3 1.5 0.75 0.75 80
2.5 1.25 0.625 0.625 80
2.0 1 0.5 0.5 80
1.5 0.75 0.375 0.375 80
在曝光工艺中，通常将光刻胶作为涂层，然后通过曝光工艺、显影工艺、刻蚀工艺在光刻胶涂层下方形成特定的成图图形。光刻胶包括负性光刻胶和正性光刻胶。在本实施例中，光掩模板中构图图形的透光性质可以根据曝光工艺中采用的光刻胶的化学反应机理和显影原理来设置。例如，在一个示例中，条状主体11、齿状翼部12和柱状部13均为透光图形或半透光图形，或者，条状主体11、齿状翼部12和柱状部13均为不透光图形。对于负性光刻胶，由于其经光照后形成不可溶物质，不会被显影去除，因 此条状主体11、齿状翼部12和柱状部13均设置为透光图形，以保留和条状主体11、齿状翼部12和柱状部13对应区域的负性光刻胶，进一步保留负性光刻胶下方的实际成图图案；对于正性光刻胶，由于其经光照后变成可溶物质，可被显影去除，因此条状主体11、齿状翼部12和柱状部13均设置为不透光图形，以保留和条状主体11、齿状翼部12和柱状部13对应区域的正性光刻胶，进一步保留正性光刻胶下方的实际成图图案。
本实施例提供的光掩模板可以用于形成条状的栅线图形和/或条状的数据线图形。在一个示例中，光掩模板中的构图图形包括用于形成栅线的条状主体11或用于形成数据线的条状主体11、以及位于条状主体11两侧并关于条状主体11对称的辅助构图图形单元。根据实际应用中栅线和数据线的形成工艺，可以采用本发明提供的同一光掩模板来形成栅线和数据线，也可采用本发明提供的两块不同的光掩模板来分别形成栅线和数据线，这里不做限定。在另一个示例中，光掩模板中的构图图形包括：用于形成栅线的栅线条状主体11和用于形成数据线的数据线条状主体11，分布于栅线条状主体11两侧并关于栅线条状主体11对称的辅助构图图形单元，和/或分布于数据线条状主体11两侧并关于数据线条状主体11对称的辅助构图图形单元。
可以理解的是，在足够小的长度内，曲线在某种程度上可视为直线。因此，本实施例提供的光掩模板采用辅助构图图形单元来提高微型图案的解析度的方法适用于任何线形，上述对直线图案如何实现精度补偿的具体说明仅为示例，并非限定。
光掩模板一般包括透明衬底21、保护层23和位于透明衬底21与保护层23之间的图形层22，构图图形(包括条状主体和辅助构图图形单元)形成图形层22。如图5和图6所示，该光掩模板依次包括透明衬底21、图形层22和保护层23，保护层23通过贴膜框24与透明衬底21形成整体，其中，图形层22可形成为如栅线或数据线图形，根据与光掩模板配合使用的光刻胶的性质，图形层22可以采用不透光材料形成不透光的结构(这里的不透光 材料通常为铬)，图形层22以外的部分为空隙或者为采用透光材料形成的透光结构；当然，图形层22也可以为空隙或者为采用透光材料形成的透光结构，图形层22以外的部分可以为采用不透光材料形成的不透光的结构。
本实施例的光掩模板中，在用于形成直线图案的条状主体两侧设置辅助的齿状翼部和柱状部，考虑到曝光机受其解像力限制不能对线宽小于曝光机解像力的构图图形准确成像，通过设置条状主体两侧的辅助构图图形来保证条状主体构图的解析度；通过进一步利用光衍射，可以提高曝光机对微型图案曝光度的曝光宽幅5％～10％；同时，在显示基板中，线宽越小，像素区中相应的像素电路(例如不透光的薄膜晶体管部分)所占面积越小，有效显示区域越大，透光部分会有所提高，因此通过采用该掩模板还能改善像素开口率及透光率，充分发挥曝光机高解析度(High PPI)特性，使得形成的图案的精细度提高，从而使得制造高解析度的显示产品成为可能。
第二实施例
本实施例提供一种光掩模板，与第一实施例不同的是，本实施例的光掩模板中，在条状主体11的两侧仅设置有齿状翼部12。
如图7所示，辅助构图图形单元包括齿状翼部12，齿状翼部12与条状主体11相接设置。
本实施例中，光掩模板中的齿状翼部的形状和结构参数可参考第一实施例中光掩模板中的齿状翼部的形状和结构参数，这里不再详述。
本实施例的光掩模板中，通过在用于形成直线图案的条状主体两侧设置齿状翼部，提高曝光机对微型图案的解析度，在不对现有设备进行改造的条件下，通过对光掩模板的设计来改善成像性能，充分发挥了曝光机高解析度(High PPI)特性，有助于改善像素开口率及透光率，使得形成的图案的精细度提高，从而使得制造高解析度的显示产品成为可能。
第三实施例
本实施例提供一种光掩模板，与第一实施例不同的是，本实施例的光掩模板中，在条状主体11的两侧仅设置有柱状部13。
如图8所示，柱状部13设置于条状主体11外侧、且与条状主体11分离设置，柱状部13包括关于条状主体11对称设置的第一柱状部和第二柱状部，且第一柱状部和第二柱状部的底部与顶部分别与条状主体的底部和顶部大致平齐，并且条状主体的宽度与第一柱状部和/或第二柱状部的宽度的比值为1:1至9:1。
本实施例中，光掩模板中的柱状部的形状和结构参数还可参考第一实施例中光掩模板中的柱状部的形状和结构参数，这里不再详述。
本实施例的光掩模板中，通过在用于形成直线图案的条状主体两侧设置柱状部，提高曝光机对微型图案的解析度，在不对现有设备进行改造的条件下，通过对光掩模板的设计来改善成像性能，充分发挥了曝光机高解析度(High PPI)特性，使得形成的图案的精细度提高，有助于改善像素开口率及透光率，从而使得制造高解析度的显示产品成为可能。
第一实施例1至第三实施例提供的光掩模板适用于所有采用构图工艺形成半导体结构的过程中采用曝光工艺形成微型图案的场合，特别适用于制备液晶显示(LCD)装置、有机发光二极管(OLED)显示装置的过程中采用曝光工艺形成微型图案的场合。
第四实施例
本实施例提供一种曝光系统，该曝光系统包括第一实施例1至第三实施例中的任意一种光掩模板。
采用该曝光系统能够提高成图图案的精细度，从而提高形成的半导体器件的品质。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (15)

  1. 一种光掩模板，包括用于形成成图图案的构图图形，所述构图图形包括用于形成直线图案的条状主体，其特征在于，所述构图图形还包括在所述条状主体的两侧设置的辅助构图图形单元，所述辅助构图图形单元能对曝光过程中的光线方向和光线强度进行调整和补偿。
  2. 根据权利要求1所述的光掩模板，其特征在于，所述辅助构图图形单元包括齿状翼部，所述齿状翼部与所述条状主体相接设置。
  3. 根据权利要求2所述的光掩模板，其特征在于，所述齿状翼部包括分别分布在在所述条状主体的两侧、且关于所述条状主体对称设置的第一翼部和第二翼部。
  4. 根据权利要求3所述的光掩模板，其特征在于，所述第一翼部遍布所述条状主体的一侧，所述第二翼部遍布所述条状主体的另一侧。
  5. 根据权利要求4所述的光掩模板，其特征在于，所述第一翼部和所述第二翼部分别包括形状和大小均相同的多个凸起，每个所述凸起的底边与所述条状主体的侧边重合，至高点与所述条状主体的侧边相对。
  6. 根据权利要求5所述的光掩模板，其特征在于，所述凸起的形状为三角形、圆顶倒角三角形、半圆形、椭圆形或扇形，所述三角形或所述圆顶倒角三角形的顶角的角度范围为30°至120°。
  7. 根据权利要求3所述的光掩模板，其特征在于，所述条状主体的宽度与所述第一翼部或所述第二翼部的宽度的比值为1:1至3:1。
  8. 根据权利要求1中所述的光掩模板，其特征在于，所述辅助构图图形单元包括柱状部，所述柱状部与所述条状主体分相离设置。
  9. 根据权利要求8所述的光掩模板，其特征在于，所述柱状部包括关于所述条状主体对称设置的第一柱状部和第二柱状部，且所述第一柱状部和第二柱状部的底部与顶部分别与所述条状主体的底部和顶部平齐。
  10. 根据权利要求9所述的光掩模板，其特征在于，所述条状主体的宽度与所述第一柱状部或第二柱状部的宽度的比值为1:1至9：1。
  11. 根据权利要求8所述的光掩模板，其特征在于，所述辅助构图图形单元还包括齿状翼部，所述齿状翼部与所述条状主体相接设置，所述柱状部设置于所述齿状翼部外侧、并与所述齿状翼部分离，并且位于所述条状主体同侧的所述柱状部与所述齿状翼部之间的间隙宽度等于位于该侧的柱状部的宽度。
  12. 根据权利要求1-11中任一项所述的光掩模板，其特征在于，所述构图图形为透光图形或半透光图形，或者，所述构图图形为不透光图形。
  13. 根据权利要求8所述的光掩模板，其特征在于，所述构图图形包括多个条状主体，并且相邻的条状主体之间共用位于二者之间的所述柱状部。
  14. 根据权利要求1-13中任一项所述的光掩模板，其特征在于，所述光掩模板还包括透明衬底和保护层，所述构图图形形成在所述透明衬底与所述保护层之间。
  15. 一种曝光系统，其特征在于，包括权利要求1-14中任一项所述的光掩模板。
PCT/CN2016/073843 2015-09-11 2016-02-16 光掩模板和曝光系统 WO2017041438A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/104,769 US9978595B2 (en) 2015-09-11 2016-02-16 Photo mask and exposure system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510580628.8 2015-09-11
CN201510580628.8A CN105093813B (zh) 2015-09-11 2015-09-11 光掩模板和曝光系统

Publications (1)

Publication Number Publication Date
WO2017041438A1 true WO2017041438A1 (zh) 2017-03-16

Family

ID=54574561

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/073843 WO2017041438A1 (zh) 2015-09-11 2016-02-16 光掩模板和曝光系统

Country Status (3)

Country Link
US (1) US9978595B2 (zh)
CN (1) CN105093813B (zh)
WO (1) WO2017041438A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105093813B (zh) * 2015-09-11 2019-09-06 京东方科技集团股份有限公司 光掩模板和曝光系统
CN106226926B (zh) * 2016-08-08 2019-08-23 深圳市科利德光电材料股份有限公司 一种液晶显示器及改善姆拉现象的方法
CN108227368A (zh) 2018-01-17 2018-06-29 京东方科技集团股份有限公司 一种掩模板、显示基板以及显示装置
CN108761997A (zh) * 2018-06-05 2018-11-06 深圳市华星光电技术有限公司 光罩和薄膜晶体管的制备方法
CN109212890B (zh) * 2018-08-31 2022-01-18 京东方科技集团股份有限公司 掩膜版、显示基板及其制作方法
CN113257664B (zh) * 2020-02-11 2023-10-13 华邦电子股份有限公司 半导体器件及其制造方法
CN113467181A (zh) * 2021-06-23 2021-10-01 惠科股份有限公司 掩膜版、阵列基板的制造方法及阵列基板

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5395739A (en) * 1992-12-15 1995-03-07 Mitsubishi Denki Kabushiki Kaisha Method for producing field effect transistor
CN101105633A (zh) * 2006-07-10 2008-01-16 中芯国际集成电路制造(上海)有限公司 光学近似修正的方法及其光掩膜图案
CN101359169A (zh) * 2007-08-03 2009-02-04 中芯国际集成电路制造(上海)有限公司 掩膜图案校正方法
CN101424882A (zh) * 2007-10-29 2009-05-06 乐金显示有限公司 曝光设备,图案、沟道、孔形成方法,液晶显示器及制造方法
CN102129166A (zh) * 2010-01-12 2011-07-20 中芯国际集成电路制造(上海)有限公司 亚分辨率辅助图形的设置以及光刻掩膜版的制作方法
CN103620497A (zh) * 2012-06-29 2014-03-05 北京京东方光电科技有限公司 掩模板
CN105093813A (zh) * 2015-09-11 2015-11-25 京东方科技集团股份有限公司 光掩模板和曝光系统

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5929318A (en) * 1997-05-02 1999-07-27 Illinois Instruments, Inc. System and method for sensing low levels of a particular gas in an atmosphere
JP3595166B2 (ja) * 1998-07-23 2004-12-02 株式会社東芝 マスクパターン設計方法
US7147975B2 (en) * 2003-02-17 2006-12-12 Matsushita Electric Industrial Co., Ltd. Photomask
CN1924701A (zh) * 2005-09-02 2007-03-07 联华电子股份有限公司 形成光致抗蚀剂图案的方法
CN103760748A (zh) * 2014-01-28 2014-04-30 北京京东方光电科技有限公司 掩模板和过孔形成方法
CN204374608U (zh) * 2015-01-23 2015-06-03 山西大同大学 一种掩模板

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5395739A (en) * 1992-12-15 1995-03-07 Mitsubishi Denki Kabushiki Kaisha Method for producing field effect transistor
CN101105633A (zh) * 2006-07-10 2008-01-16 中芯国际集成电路制造(上海)有限公司 光学近似修正的方法及其光掩膜图案
CN101359169A (zh) * 2007-08-03 2009-02-04 中芯国际集成电路制造(上海)有限公司 掩膜图案校正方法
CN101424882A (zh) * 2007-10-29 2009-05-06 乐金显示有限公司 曝光设备,图案、沟道、孔形成方法,液晶显示器及制造方法
CN102129166A (zh) * 2010-01-12 2011-07-20 中芯国际集成电路制造(上海)有限公司 亚分辨率辅助图形的设置以及光刻掩膜版的制作方法
CN103620497A (zh) * 2012-06-29 2014-03-05 北京京东方光电科技有限公司 掩模板
CN105093813A (zh) * 2015-09-11 2015-11-25 京东方科技集团股份有限公司 光掩模板和曝光系统

Also Published As

Publication number Publication date
CN105093813B (zh) 2019-09-06
CN105093813A (zh) 2015-11-25
US20170194139A1 (en) 2017-07-06
US9978595B2 (en) 2018-05-22

Similar Documents

Publication Publication Date Title
WO2017041438A1 (zh) 光掩模板和曝光系统
TWI541588B (zh) 顯示裝置製造用光罩、及圖案轉印方法
KR101333899B1 (ko) 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 패턴 전사 방법 및 박막 트랜지스터의 제조 방법
US10620526B2 (en) Mask, manufacturing method thereof, patterning method employing mask, optical filter
KR20160037806A (ko) 포토마스크 및 표시 장치의 제조 방법
US20150128099A1 (en) Mask and method of forming pattern by using the same
KR101593366B1 (ko) 근접 노광용 포토 마스크
JP4934236B2 (ja) グレートーンマスクブランク、グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法
KR20110128753A (ko) 다계조 포토마스크의 제조 방법 및 패턴 전사 방법
TW201520682A (zh) 光罩及使用該光罩之基板之製造方法
US20130122403A1 (en) Mask for exposure and method of fabricating substrate using said mask
TWI569090B (zh) 相位移遮罩及使用該相位移遮罩之抗蝕劑圖案形成方法
TWI777402B (zh) 顯示裝置製造用光罩、及顯示裝置之製造方法
TWI753152B (zh) 光罩以及形成圖案的方法
TWI443449B (zh) 光罩
US9977324B2 (en) Phase shift mask and method of forming patterns using the same
JP2014191323A (ja) プロキシミティ露光用フォトマスクおよびそれを用いるパターン露光方法
JP2013246340A (ja) フォトマスクとその製造方法、およびパターン露光方法
JP5937873B2 (ja) フォトマスク用基板セット、フォトマスクセット、及びパターン転写方法
JP4654144B2 (ja) 薄膜トランジスタの製造方法、薄膜トランジスタ、集積回路、および液晶表示装置
TW201608330A (zh) 評估用遮罩、評估方法、曝光裝置以及物品之製造方法
JP2013246339A (ja) フォトマスクおよびそれを用いるパターン露光方法
TW201940959A (zh) 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法
TWI421627B (zh) 光學鄰近修正光罩
JP2014235319A (ja) プロキシミティ露光機

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 15104769

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16843379

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16843379

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 23.08.2018)

122 Ep: pct application non-entry in european phase

Ref document number: 16843379

Country of ref document: EP

Kind code of ref document: A1