WO2017037010A1 - Procédé de fabrication de filaments de diode électroluminescente et filament de diode électroluminescente - Google Patents

Procédé de fabrication de filaments de diode électroluminescente et filament de diode électroluminescente Download PDF

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Publication number
WO2017037010A1
WO2017037010A1 PCT/EP2016/070302 EP2016070302W WO2017037010A1 WO 2017037010 A1 WO2017037010 A1 WO 2017037010A1 EP 2016070302 W EP2016070302 W EP 2016070302W WO 2017037010 A1 WO2017037010 A1 WO 2017037010A1
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WO
WIPO (PCT)
Prior art keywords
light
emitting diode
filaments
filament
carrier
Prior art date
Application number
PCT/EP2016/070302
Other languages
German (de)
English (en)
Inventor
Thomas Schlereth
Ivar TÅNGRING
Tony Albrecht
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2017037010A1 publication Critical patent/WO2017037010A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Definitions

  • LED filaments specified.
  • a light-emitting filament is specified.
  • the document US 2014/0369036 AI relates to an LED lamp and a filament with such a lamp.
  • An object to be solved is to provide a method with which LED filaments can be produced efficiently.
  • the method produces a light-emitting filament.
  • Light-emitting filament is in particular a luminaire component which is modeled on a filament of a conventional incandescent lamp.
  • the light-emitting diode filament is, for example, a strip which is provided with a plurality of light-emitting diode chips and, in operation, white,
  • the light-emitting diode filament is preferably set up in a replica of a
  • Incandescent lamp to be used and / or to simulate a glow wire.
  • the method comprises the step of applying a plurality of LED chips on a first carrier.
  • Light-emitting diode chips are preferably applied directly to the first carrier.
  • the first carrier can be a temporary carrier or a permanent carrier for the LED chips.
  • the LED chips can all be identical. Alternatively and preferably at least two or at least three different types of light-emitting diode chips are used. For example, find blue LED chips for excitation of a phosphor use in combination with red light emitting
  • first blue-emitting light-emitting diode chips for exciting a phosphor second blue-emitting light-emitting diode chips for emitting blue light out of the light-emitting filament and additionally red light-emitting light-emitting diode chips can be applied to the carrier, in particular in an alternating sequence.
  • the method comprises the step of covering the light-emitting diode chips with a second carrier.
  • the second carrier is a temporary carrier which is incorporated into the finished carrier
  • LED chips placed in a two-dimensional arrangement between the two carriers.
  • the LED chips are preferred for a variety of
  • LED filaments provided and not just for a single LED filament.
  • Light-emitting diode chips encapsulated with a potting body By the encapsulation of the LED chips is preferably formed a coherent filament composite. In the filament composite, all light-emitting diode chips are preferably mechanically integrated. In other words, under the
  • the filament composite can also be referred to as a synthetic wafer.
  • the two serve
  • the carrier for example, lining inner walls of another, outer mold.
  • the potting body is created directly on the light-emitting diode chips.
  • the potting body encloses the LED chips
  • the potting body is connected to the
  • the method comprises the step of removing the first carrier or the second carrier or both carriers.
  • electrical connections are made to the potting body and between the light-emitting diode chips. Due to the electrical connections, the LED chips, at least
  • the electrical connections can, for example, connection surfaces for external electrical contacting of the finished LED filaments and interconnects or electrical bridges between
  • the method comprises the step of uniting the filament composite to the
  • This process step is preferably a last process step of the production process. Before a singulation can
  • each of the finished light-emitting diode filaments is mechanically self-supporting. In other words, it is not necessary for that to happen
  • LED filaments later be provided with a mechanical support substrate or applied to a mechanical support substrate.
  • the LED filaments can thus be attached to two electrical and / or thermal contact points and a
  • the light-emitting diode filament comprises at least eight or twelve or twenty of the light-emitting diode chips. Alternatively or additionally lies the
  • the finished product is a liquid crystal according to at least one embodiment.
  • LED filament an elongated shape. This may mean that a ratio of one length to one width of the finished LED filament is at least 10 or 15 or 25. Alternatively or additionally, this is
  • Ratio of length to width at most 80 or 60 or 40.
  • the method for producing light-emitting diode filaments is set up and comprises at least the following steps, preferably in the order indicated:
  • Light-emitting filaments is mechanically self-supporting
  • Incandescent, increasingly light-emitting filaments used.
  • a plurality of light-emitting diode chips is arranged on a linear, common substrate and with a
  • Luminescent material wrapped When switched on, such an arrangement acts as a classic, glowing filament of an incandescent lamp on a viewer and thus represents directly an important design component of a corresponding product.
  • LED filaments are usually produced by sawing glass or sapphire into strips. Subsequently, a metal-glass connection is produced, so that an electrical connection between contact surfaces and the carrier strip is realized. In this case, in particular by mechanical bending or clasping a kind
  • LED chips are wired. Subsequently, the phosphor material is applied to each of the filaments. With the method described here, however, it is possible to process the LED filaments together in a filament composite. In particular, a fragile glass carrier or sapphire carrier can be dispensed with, and a
  • Efficiency of the manufacturing process can be increased, as well as a yield of the process.
  • Process step D) removes only one of the carriers.
  • step E2) immediately before step F), the remaining carrier is removed. In the finished
  • Light emitting diode filaments is thus none of the carriers that are attached in the process steps A) and B),
  • the step E) is followed by a step El).
  • at least one phosphor body is applied to the filament composite.
  • the phosphor body may be unitary and / or continuous and / or extend over at least some of the filaments. That is, the phosphor body can cover the filament composite and in particular the potting body largely or the entire surface, seen in plan view. It can the
  • Fluorescent body are applied as a film or as a plate or even by printing or spraying on the potting and on the filament composite from step E) are formed.
  • the finished LED filaments each exactly a linear arrangement of
  • LED chips on. In other words, all the LED chips of the LED filament are then located on a common straight line. Alternatively, it is possible that the LED chips are arranged in two straight lines and
  • a continuous phosphor body is applied in step E1) on both main sides of the filament composite. In other words, then both main sides of the filament composite with a
  • the finished LED filaments emit the light on two opposite sides.
  • the emitted light is preferably white light.
  • the first carrier is a permanent carrier still present in the final light emitting diode filaments.
  • the first, permanent carrier is for example, a heat sink, a phosphor layer or an optical disk, for example with lenses.
  • the first, preferably permanent, carrier extends into the finished one
  • Filament underside opposite filament top only partially covered by a phosphor body.
  • a phosphor body only the external ones
  • the finished ones are
  • the finished light-emitting filaments are mechanically flexible may mean that they can be bent in the intended use once or several times with a radius of curvature of less than or equal to the length of the finished light-emitting filaments.
  • the potting body is preferably made of a mechanically flexible plastic and a mechanical connection between the individual
  • the finished light-emitting diode filaments it is also possible for the finished light-emitting diode filaments to be twisted. For example, then there is a rotation angle along a longitudinal axis along which the finished
  • Light-emitting filaments can be twisted once or several times temporarily or permanently nondestructively, at least 45 ° or 90 ° or 120 °.
  • twistable light-emitting filaments it is possible in one Replica of a light bulb a particularly uniform
  • the twisting of the light-emitting filaments is in particular made possible by the use of the potting body, as compared to a rigid support, such as glass or sapphire.
  • Heat sink means, for example, that a thermal conductivity of a material of the heat sink is at least 50 W / m-K or at least 100 W / m-K or 120 W / m-K.
  • the heat sink is made of a
  • thermally conductive metal such as aluminum and / or copper formed or consists predominantly thereof.
  • the heat sink is electrically isolated from the electrical connections. This makes it possible, a thermal bonding of the finished LED filaments independent of an electrical
  • LED filament then have a large area designed thermal contact surfaces, for example, with an area of at least 5 mm 2 .
  • the heat sink is formed by a coherent layer, which lies in a plane below the potting body and the
  • the heat sink comprises or consists of a shadow mask.
  • one or more of the light-emitting diode chips is preferably placed in each hole of the shadow mask in step A).
  • the light-emitting diode chips and the heat sink or at least the shadow mask lie in a common plane.
  • step C) a strong mechanical connection is established between the light-emitting diode chips and the shadow mask by creating the potting body. That is, in each hole of the shadow mask with a light-emitting diode chip then a material of the potting body can be filled, so that the LED chips over the
  • a thickness of the potting body then preferably exceeds a thickness of
  • Shadow mask In particular, the potting extends beyond the
  • the heat sink comprises a bottom plate in addition to the shadow mask.
  • the shadow mask is preferably mounted directly on the bottom plate. It is possible that the bottom plate and the shadow mask are formed integrally.
  • the bottom plate is preferably free of recesses or openings through the bottom plate
  • the bottom plate can form a coherent, massive and uninterrupted layer.
  • the potting completely cover the bottom plate, seen in plan view.
  • the carriers or covers at least one of the carriers in step C) only partially cover the main sides of the light-emitting diode chips.
  • the main sides of the LED chips are then partially free. This makes it possible that the potting body is also formed in places on the main sides of the LED chips. That way you can
  • Anchoring structures are formed, by means of which the light-emitting diode chips are mechanically better integrated into the potting and / or the filament composite.
  • the finished light-emitting filaments have a length of at least 15 mm or 20 mm or 30 mm. Alternatively or additionally, the length of the finished light-emitting filaments is at most 100 mm or 60 mm or 45 mm.
  • a width or average width of the LED filaments is at least 0.5 mm or 0.8 mm or 1.1 mm. Alternatively or additionally, the width is at most 5 mm or 3 mm or 2 mm or 1.8 mm. The width is preferably determined in the direction parallel to the main sides of the carrier. The width of the finished light-emitting filaments is thus determined in particular by the separation in step F).
  • Light-emitting filaments have a thickness of at least 0.6 mm or 0.8 mm or 1.2 mm. Alternatively or additionally, the thickness is at most 3 mm or 2 mm or 1.6 mm. The thickness is preferably not or not in step F)
  • the heat sink has a thickness of at least 0.15 mm or 0.2 mm or 0.3 mm. Alternatively or additionally, the thickness of the
  • Heat sink not more than 1 mm or 0.8 mm or 0.5 mm.
  • a main component of the heat sink is preferably a metal such as copper or aluminum.
  • Main component means that a weight proportion of the corresponding substance at the
  • Total heat sink is at least 60% or 80% or 95%.
  • the finished ones are
  • Light-emitting filaments free from a glass carrier or a sapphire carrier This does not exclude that the individual light-emitting diode chips have about a sapphire carrier, however, such a sapphire carrier does not extend over the entire LED filament and is about for a
  • the finished ones are
  • LED filaments adapted to be plugged or clamped in an external fixture. In this way, the LED filaments are electric
  • the potting body then contains particles of a metal oxide such as titanium dioxide or zirconium dioxide or tantalum oxide.
  • the particles may be spherical or polyhedral shaped or in the form of
  • the potting body is reflective to visible light.
  • the potting body appears white to a viewer.
  • Potting body at least one phosphor. It is possible that the potting body contains the same phosphor as the phosphor body and / or the phosphor layer. Thereby for example, it is possible for radiation emerging laterally from the light-emitting diode chips not to be reflected at the potting body, but instead to be converted in the phosphor body and / or in the phosphor layer. For the light generated by the phosphor, the potting body is preferably made clear or scattering.
  • the potting body is permeable to visible light, in particular clear-vision and transparent.
  • the potting may appear milky cloudy.
  • a light-emitting filament is specified.
  • the LED filament is preferably made by a method as recited in connection with one or more of the above-identified embodiments. Features of the method are therefore also disclosed for the LED filament and vice versa. In at least one embodiment, this is
  • LED filament adapted to, in one
  • LED filaments is preferably at least 30 V or 45 V or 60 V and / or at most 400 V or 240 V or 115 V or 90 V or 80 V.
  • FIG. 1 to 8 are schematic representations of here
  • FIG. 1A shows, in a schematic sectional view, a method step of a method for producing light-emitting diode filaments 10 described here.
  • a first carrier 1 On a first carrier 1, a plurality of light-emitting diode chips 3
  • the carrier 1 is, for example, a mechanically flexible film or else a rigid one
  • the light-emitting diode chips 3 each have a chip substrate 33 on which a semiconductor layer sequence 30 is mounted. According to FIG. 1A, all n-sides 31 point towards the first carrier 1 and all p-sides 32 away from the first one
  • the light-emitting diode chips 3 shown in FIG. 1A preferably each have a light-permeable chip substrate 33 made of sapphire and can therefore emit radiation on all sides.
  • the semiconductor layer sequence 30 is preferably based on AlInGaN, so that the light-emitting diode chips 3 are set up, for example, to produce blue light.
  • a second carrier 2 is applied to the light-emitting diode chips 3.
  • the second carrier 2 which is for example a If the film is a sealing of a volume, so that a potting body 4 can be generated in the subsequent process step.
  • FIG. 1C1 in a sectional representation and in FIG. 1C2, in a schematic plan view, the creation of the
  • the potting body 4 is made for example of a silicone, epoxy or silicone-epoxy hybrid material.
  • the potting 4 may be an admixture, for example, for setting a
  • the potting body 4 appears white to a viewer and is
  • Potting body 4 provided with a phosphor and otherwise be transparent. Through a fluorescent in the
  • Potting 4 is a lateral emission of
  • LED chips 3 so an emission, in particular along the longitudinal axis of the LED filament 10, directly convertible into light of another wavelength.
  • the light-emitting diode chips 3 are arranged two-dimensionally. All light-emitting diode chips 3 are mechanically connected via the potting body 4.
  • the LED chips 3 are for a variety of
  • a filament composite 40 is produced by the potting 4.
  • the filament composite 40 is a synthetic wafer, with which the later light-emitting filaments 10 to be separated can be handled together.
  • the two carriers 1, 2 are removed.
  • an external electrical contact surface 55 is generated in each case in strip form.
  • the contact surface 55 is produced, for example, by adhering a printed circuit board film, by screen printing, by paste printing, by jetting or by electroplating.
  • the contact surface 55 is not necessary for the contact surface 55 to be a continuous strip across a plurality of the later light-emitting filaments 10
  • the electrical connections 5 are bonding wires. Instead of bonding wires can also planar connections such as
  • Printed conductors such as by photo technology or screen printing or jetting, are applied. Also a vaporization of
  • the phosphor bodies 8 preferably leave free an edge region on the contact surfaces 55, both on the filament underside 11 and on the filament upper side 12.
  • the phosphor body 8 on the lower side of the filament 11 is, for example, a silicone film or else a glass plate which contains a phosphor or a phosphor Phosphor mixture is added. This can also apply to the phosphor body 8 on the upper side of the filament 12.
  • the two phosphor bodies 8 are replaced by a single, not shown phosphor coating.
  • Phosphor layer 7 may be present, for example, by immersing the filament in a bath
  • Converter material or produced by dispensing With such a phosphor coating can be cylindrical or nearly cylindrical LED filaments 10, in particular with a uniform radiation in all directions transverse to a longitudinal axis of the LED filament 10 realize.
  • the separation towards the finished light-emitting diode filaments 10 is illustrated in the sectional representation in FIG. 1G1 and in the plan view in FIG. 1G2.
  • the resulting LED filaments 10 are mechanically self-supporting and can be mechanically flexible or rigid.
  • the light-emitting diode chips 3 can be integrated into the filament composite 40, the filament composite 40 being a synthetic wafer in which the processing can be carried out efficiently at the panel level.
  • a potting body 4 for the filament composite 40 is cost-effectively manufacturable and adjustable in terms of mechanical properties by suitable choice of the material for the potting 4.
  • FIG. 2B the second carrier 2 is attached and, according to FIG. 2C, the potting body 4 and the filament composite 40 are produced.
  • FIGS. 2D and 2E show the electrical connection of the LED chips 3. In this case, two series circuits are realized, see Figure 2E. In a series circuit are all the LED chips 3 with the p-side 32nd up and in a second series circuit all LED chips 3 with the p-side 32 down. In each case not addressed in a series circuit, intervening LED chips 3 are connected to the electrical connections 5a, which can be configured as interconnects
  • the chip substrates 33 are formed from an electrically insulating material or are coated in an electrically insulating manner.
  • the electrical connections 5a cover the associated
  • LED chips 3 preferably completely, seen in plan view.
  • Filament bottom 11 are electrically connected in series, so that then the contact surfaces 55 may be located at a single end of the LED filament 10, wherein one of the only in this case two external electrical contact surfaces then on the lower side of the filament 11 and another
  • the light-emitting diode chips 3 are each provided with a single, coherent phosphor body 8 on the lower side of the filament 11 as well as on the upper side of the filament 12.
  • the at least one phosphor body 8 preferably has a homogeneous material composition and a uniform thickness.
  • thinner areas of the phosphor body 8 are located between adjacent light-emitting diode chips 3.
  • At least one of the phosphor bodies 8 or both phosphor bodies 8 can be designed in a lenticular fashion in some areas, wherein then preferably each of the
  • LED chips 3 is associated with a lens section.
  • FIG. 3 shows a further exemplary embodiment.
  • the method steps of FIGS. 3A to 3D are analogous to FIG. 1.
  • a heat sink 6 is applied over the entire surface of the filament underside 11.
  • the heat sink 6 is for example off
  • Formed aluminum and preferably has a thickness of at least 150 ym.
  • the heat sink 6 can act as a mirror for radiation generated in the LED chips 3. In this case, the finished emits
  • Heat dissipation and cooling of the LED chips 3 can be realized. Furthermore, such a heat sink 6 can be thermally connected at least pointwise to an external cooling plate.
  • the heat sink 6 is located below the potting body 4.
  • the heat sink 6 is in the form of a shadow mask 61
  • FIG. 4A one of the light-emitting diode chips 3 is placed in each region of the light-emitting diode filaments 10 in each hole of the shadow mask 61.
  • Figure 4B the holes are filled with the potting body 4, so that the filament composite 40 is formed.
  • the heat sink 6 closes at the
  • Shadow mask 61 from. At the top of the filament 12, the potting body 4 closes, as well as in the other
  • Embodiments flush with a main side of the
  • the electrical contact surfaces 55 are attached.
  • the contact surfaces 55 are preferably each between two adjacent regions of the heat sink 6 at the edge. The contact surfaces 55 can continue toward the
  • LED chips 3 protrude as the exposed areas of the heat sink 6.
  • FIG. 4D shows that the light-emitting diode chips 3 are electrically connected to the connection means 5.
  • the phosphor body 8 is produced.
  • singulation takes place. The resulting
  • Light-emitting filament 10 is shown in Figure 1F2 in a plan view.
  • Heat sink of Figure 4 is both a good
  • the shadow mask 61 has a smaller thickness than the one
  • the shadow mask 61 is provided with vertical side walls.
  • the potting body 4 is preferably reflective and white in this case.
  • the side walls of the shadow mask 61 can serve as reflectors to allow a more directional radiation of the light.
  • the heat sink 6 contains the shadow mask 61 and, in addition, a
  • Bottom plate 62 has.
  • the LED chips 3 sit on the bottom plate 62. This is a special
  • the dicing slots 69 may have various shapes as seen in plan view as in FIG. 5D
  • the holes in the shadow mask 61 are each shaped in a square or rectangular manner. Deviating from this can also round holes
  • the heat sink 6 is used as the first carrier 1.
  • the first carrier 1 remains permanently in the LED filament 10.
  • the remaining process steps are performed, for example, analogously to FIG.
  • the first carrier 1 used is the phosphor body 8, which is also permanently attached to the
  • the phosphor body 8 in this case is, for example, a glass plate or plastic plate offset with the phosphor. Also in the process according to FIG. 7 the remaining ones are used
  • a temporary intermediate carrier can be dispensed with and only a total of a temporary support 2 for sealing in the
  • FIG. 8C the main sides of the LED chips 3 partially covered by the potting body 4.
  • anchoring structures 43 are formed on edges of the LED chips 3.
  • About these anchoring structures 43 is an improved mechanical anchoring of the LED chips 3 in comparison to the embodiments of Figures 1 to 7
  • Corresponding anchoring structures 43 may also be present in all other exemplary embodiments.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)

Abstract

Selon un mode de réalisation, le procédé sert à la fabrication de filaments de diode électroluminescente (10) et comprend les étapes suivantes : A) le dépôt de puces de diode électroluminescente (3) directement sur un premier support (1) ; B) le recouvrement des puces de diode électroluminescente (3) avec un second support (2) ; C) l'enrobage par extrusion des puces de diode électroluminescente (3) avec un corps de moulage (4) pour obtenir un composé regroupé de filaments (40), les deux supports (1, 2) servant de formes de moulage tandis que le corps de moulage (4) est formé directement sur les puces de diode électroluminescente (3) ; D) le retrait du premier support (1) ou du second support (2) ou des deux supports (1, 2) ; E) la pose de liaisons électriques (5) sur le corps de moulage (4) et entre les puces de diode électroluminescente (3) de sorte que les puces de diode électroluminescente (3) sont électriquement reliées ; et F) la séparation du composé de filaments (40) en des filaments de diode électroluminescente (10), chacun des filaments de diode électroluminescente (10) terminés étant mécaniquement autoporteur, comprend au moins huit puces de diode électroluminescente (3) et présente un rapport longueur sur largeur d'au moins 15.
PCT/EP2016/070302 2015-09-04 2016-08-29 Procédé de fabrication de filaments de diode électroluminescente et filament de diode électroluminescente WO2017037010A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015114849.8A DE102015114849B4 (de) 2015-09-04 2015-09-04 Verfahren zur Herstellung von Leuchtdiodenfilamenten und Leuchtdiodenfilament
DE102015114849.8 2015-09-04

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WO2020025139A1 (fr) * 2018-08-02 2020-02-06 Osram Opto Semiconductors Gmbh Dispositif à semi-conducteur optoélectronique et procédé de production d'un dispositif à semi-conducteur optoélectronique

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