WO2017035926A1 - 一种射频等离子体设备匹配器 - Google Patents

一种射频等离子体设备匹配器 Download PDF

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Publication number
WO2017035926A1
WO2017035926A1 PCT/CN2015/092172 CN2015092172W WO2017035926A1 WO 2017035926 A1 WO2017035926 A1 WO 2017035926A1 CN 2015092172 W CN2015092172 W CN 2015092172W WO 2017035926 A1 WO2017035926 A1 WO 2017035926A1
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WIPO (PCT)
Prior art keywords
circuit
radio frequency
matching
plasma device
matcher
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Application number
PCT/CN2015/092172
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English (en)
French (fr)
Inventor
吕欣
周仁
刘忠武
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沈阳拓荆科技有限公司
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Publication of WO2017035926A1 publication Critical patent/WO2017035926A1/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the field of semiconductor device manufacturing of the present invention is specifically a radio frequency plasma device matching device.
  • the impedance of the load coil and the plasma is generally small, and the output impedance of the RF power supply and the characteristic impedance of the transmission line are both 50 ⁇ , and the characteristic impedance of the load impedance and the transmission line do not match.
  • the matching device needs to be adjusted.
  • Each of the existing matching devices is composed of one capacitor and one inductor. In order to make the eight channels reach the same, each channel needs to be independently adjusted, so the adjustment process is troublesome and expensive. The consistency of all the way is not easy to guarantee.
  • the technical problem to be solved by the present invention is to provide a radio frequency plasma device matcher that simplifies the circuit, makes adjustment easier, and reduces variable loops.
  • the present invention is implemented as follows, a radio frequency plasma device matching device, the matching device is connected with the output end of the filtering circuit of the radio frequency power source, and comprises a fixed and non-adjustable inductance and a tunable capacitor in parallel to form a matching network circuit, matching One end of the network circuit is connected to the RF power source as an input terminal, and the other end is connected to the shower plate of the plasma device used by a plurality of copper strips having a common point, and the high frequency is loaded on the shower plate, and the adjustment is performed.
  • the tunable capacitor achieves matching of the load impedance and the characteristic impedance of the transmission line.
  • the tunable capacitor employs a variable vacuum capacitor.
  • the inductor is wound from a copper tube and is coated with a layer of silver after the inductor is wound.
  • the impedance matching network circuit is composed of a capacitor and an inductor, and the parallel capacitor adopts a variable vacuum capacitor, and the variable vacuum capacitor has the capability of matching high power and high withstand voltage.
  • the value can be made of copper tube by the advantages of large current and good stability. At high frequencies, since the current exhibits a significant skin effect, current flows through the surface of the conductor, in order to lower the conductor table. The resistivity of the surface is plated with a layer of silver after the inductor is wound.
  • the invention designs the multi-channel regulating network of the matching device into a way of connecting one capacitor and the inductor in parallel, and adjusting one road is relatively easy with respect to multiple paths, and the performance is relatively stable, and there is no problem of inconsistency between each other.
  • the circuit designed by the invention fixes the inductance component, and the adjustable component of the capacitor component can simplify the circuit, reduce the variable link, and can play the multi-channel adjustment network. What can be done.
  • FIG. 1 is a schematic circuit diagram of an embodiment of the present invention.
  • a radio frequency plasma device matching device is connected to an output end of a filter circuit 2 of a radio frequency power source 1, and includes a fixed non-adjustable inductor 4 and a tunable capacitor 3.
  • the matching network circuit is formed in parallel, one end of the matching network circuit is connected with the RF power source as an input terminal to input the RF power source, and the other end is connected to the shower plate of the plasma device used by a plurality of copper strips 5 having a common point respectively. 6.
  • the high frequency is loaded on the shower plate, and the plasma is discharged between the heater 7 and the characteristic impedance of the transmission line is matched by adjusting the adjustable capacitor 3.
  • the adjustable capacitor uses a variable vacuum capacitor.
  • the inductor is wound from a copper tube and is coated with a layer of silver after the inductor is wound.
  • the matcher couples 13.56 MHz of energy from the high frequency power supply to the load, that is, the reaction chamber and The heating plate, because the load is a variable impedance, its impedance will vary with the processing nuances and the environment, the matcher will automatically detect the load, and adjust the internal tuning component position to maximize the power coupled to the load.
  • the tuning component is an adjustable reactance component: one is a tunable capacitor, and the other is a tunable inductor.
  • the inductor component is fixed in the embodiment of the invention, and the capacitor component is designed to be adjustable. section.
  • the high frequency power supply outputs a signal of 13.56 MHz
  • the signal is coupled to the tuning element, and the tuning element eventually leads to the load. Since the load impedance is a variable impedance, the load impedance and the signal source may not occur. In the case of matching, therefore, by the present invention, the adjustable capacitance will adjust the position to an appropriate value according to the change of the load, so that the transmission power reaches the load.
  • the load in the device is a load circuit composed of 8 shower plates corresponding to one heating plate, a pair of tuning elements are used for impedance matching, which is relatively easy to adjust, and is relatively easy to make signal output. Power can be loaded to the load to the maximum extent possible.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)

Abstract

一种射频等离子体设备匹配器，该匹配器与射频电源(1)的滤波电路(2)输出端连接，该匹配器包括一固定不可调的电感(4)与可调电容(3)并联形成匹配网络电路，匹配网络电路的一端与射频电源(1)连接作为输入端，另一端通过具有一公共点的多个铜带(5)分别连接在所用于的等离子体设备的喷淋板(6)，将高频加载在喷淋板(6)上，通过调节可调电容(3)实现负载阻抗和传输线的特征阻抗的匹配。这种电路将电感元件固定，将电容元件设计可调节的部分，既能简化电路，减少可变环节，又能起到多路调节网络所能起到的作用。

Description

一种射频等离子体设备匹配器
技术领域
[0001] 本发明半导体设备制造领域， 具体地来讲为一种射频等离子体设备匹配器。
背景技术
[0002] 半导体设备在 13. 56 MHz频率下， 负载线圈和等离子体的阻抗一般很小， 射 频电源的输出阻抗和传输线的特征阻抗均为 50 Ω， 此吋负载阻抗和传输线的特 征阻抗不匹配， 需要匹配器进行调节， 现有匹配器 8路每一路都是由 1个电容和 1 个电感组成， 为了使 8路达到一致， 每一路需要独立调解， 所以调节过程比较麻 烦费吋， 而且每一路的一致性也不容易保证。
技术问题
[0003] 本发明所要解决的技术问题在于提供一种简化电路， 调节更容易， 减少可变环 节的射频等离子体设备匹配器。
问题的解决方案
技术解决方案
[0004] 本发明是这样实现的， 一种射频等离子体设备匹配器， 该匹配器与射频电源的 滤波电路输出端连接， 包括一固定不可调的电感与可调电容并联形成匹配网络 电路， 匹配网络电路的一端与射频电源连接作为输入端， 另一端通过具有一公 共点的多个铜带分别连接在所用于的等离子体设备的喷淋板， 将高频加载在喷 淋板上， 通过调节可调电容实现负载阻抗和传输线的特征阻抗的匹配。
[0005] 作为本发明进一步改进， 可调电容采用可变真空电容。
[0006] 作为本发明进一步改进， 电感由铜管绕制而成， 在电感绕制完成后要镀上一层 银。 有益效果
[0007] 本发明与现有技术相比， 有益效果在于： 本发明中阻抗匹配网络电路由电容， 电感组成， 并联电容采用可变真空电容， 可变真空电容具有能够匹配大功率、 高耐压值， 可通过电流大和稳定性好等优点， 电感由铜管绕制而成。 在高频吋 ， 由于电流表现出明显的趋肤效应， 电流在导体的表面流过， 为了降低导体表 面的电阻率， 在电感绕制完成后要镀上一层银。 本发明将匹配器的多路调节网 络设计成 1路电容和电感并联的方式， 调节一路相对于多路来说， 比较容易些， 而且性能相对稳定， 不会存在彼此之间不一致的问题。 为了使调节更容易， 减 少可变环节， 本发明设计的这种电路将电感元件固定， 将电容元件设计可调节 的部分， 既能简化电路， 减少可变环节， 又能起到多路调节网络所能起到的作 用。
发明的有益效果
对附图的简要说明
附图说明
[0008] 图 1为本发明实施例提供的电路原理图。
实施该发明的最佳实施例
本发明的最佳实施方式
[0009] 在此处键入本发明的最佳实施方式描述段落。
本发明的实施方式
[0010] 为了使本发明的目的、 技术方案及优点更加清楚明白， 以下结合实施例， 对本 发明进行进一步详细说明。 应当理解， 此处所描述的具体实施例仅仅用以解释 本发明， 并不用于限定本发明。
[0011] 参见图 1， 作为本发明的一个实施例， 射频等离子体设备匹配器， 该匹配器与 射频电源 1的滤波电路 2输出端连接， 包括一固定不可调的电感 4与可调电容 3并 联形成匹配网络电路， 匹配网络电路的一端与射频电源连接作为输入端将射频 电源进行输入， 另一端通过具有一公共点的多个铜带 5分别连接在所用于的等离 子体设备的喷淋板 6， 将高频加载在喷淋板上， 与加热器 7之间等离子放电， 通 过调节可调电容 3实现负载阻抗和传输线的特征阻抗的匹配。
[0012] 可调电容采用可变真空电容。 电感由铜管绕制而成， 在电感绕制完成后要镀上 一层银。
[0013] 匹配器是把高频电源发出的 13.56MHZ的能量耦合到负载上，也就是反应腔体及 加热盘， 由于负载是个可变阻抗， 其阻抗会随加工的细微差别及环境等的变化 而变化,匹配器会自动检测负载的情况，通过调整内部的调谐元件位置使被耦合到 负载端的功率最大， 调谐元件是可调的电抗元件：一个是可调电容,一个是可调电 感， 为了使调节更容易， 减少可变环节， 本发明实施例中将电感元件固定， 将 电容元件设计可调节的部分。
[0014] 当高频电源输出一个 13.56MHZ的信号吋， 该信号会耦合到调谐元件上,通过调 谐元件最终会导到负载上， 由于负载阻抗是可变阻抗， 会出现负载阻抗与信号 源不相匹配的情况， 因此， 通过本发明通过可调电容会根据负载的变换情况将 位置调整到合适值,使传输功率全部到达负载上。
[0015] 在本实施例中， 由于设备中负载是由 8个喷淋板对应一个加热盘组成的负载回 路， 采用一组调谐元件进行阻抗匹配， 调节起来相对容易， 而且也相对容易使 信号输出功率能够最大限度地加载到负载上。
[0016] 以上所述仅为本发明的较佳实施例而已， 并不用以限制本发明， 凡在本发明的 精神和原则之内所作的任何修改、 等同替换和改进等， 均应包含在本发明的保 护范围之内。
工业实用性
[0017] 在此处键入工业实用性描述段落。
序列表自由内容
[0018] 在此处键入序列表自由内容描述段落。

Claims

权利要求书
[权利要求 1] 一种射频等离子体设备匹配器， 该匹配器与射频电源的滤波电路输出 端连接， 其特征在于， 包括一固定不可调的电感与可调电容并联形成 匹配网络电路， 匹配网络电路的一端与射频电源连接作为输入端， 另一端通过具有一公共点的多个铜带分别连接在所用于的等离子体设 备的喷淋板， 将高频加载在喷淋板上， 通过调节可调电容实现负载阻 抗和传输线的特征阻抗的匹配。
[权利要求 2] 按照权利要求 1所述的射频等离子体设备匹配器， 其特征在于， 可调 电容采用可变真空电容。
[权利要求 3] 按照权利要求 1所述的射频等离子体设备匹配器， 其特征在于， 电感 由铜管绕制而成， 在电感绕制完成后要镀上一层银。
PCT/CN2015/092172 2015-09-01 2015-10-19 一种射频等离子体设备匹配器 WO2017035926A1 (zh)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040027209A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Fixed matching network with increased match range capabilities
CN1539156A (zh) * 2001-08-08 2004-10-20 ��ķ�о����޹�˾ 带有独立的等离子体密度/化学性质和离子能量控制的双频等离子体蚀刻反应器
CN1871373A (zh) * 2003-06-19 2006-11-29 等离子控制系统有限公司 等离子体生成设备和方法以及具有可调工作周期的rf驱动电路
WO2008120946A1 (en) * 2007-04-02 2008-10-09 Sosul Co., Ltd. Apparatus for supporting substrate and plasma etching apparatus having the same
CN102420579A (zh) * 2011-11-16 2012-04-18 中微半导体设备(上海)有限公司 一种自动实现射频功率匹配的方法和系统
CN102438389A (zh) * 2010-09-29 2012-05-02 中微半导体设备(上海)有限公司 单一匹配网络、其构建方法和该匹配网络射频功率源系统
CN102586753A (zh) * 2012-03-21 2012-07-18 中微半导体设备(上海)有限公司 Mocvd设备的清洁方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001335945A (ja) * 2000-05-24 2001-12-07 Mitsubishi Shoji Plast Kk Ｃｖｄ成膜装置及びｃｖｄ成膜方法
JP4850385B2 (ja) * 2000-12-25 2012-01-11 三菱商事プラスチック株式会社 Ｄｌｃ膜コーティングプラスチック容器の製造装置及びその製造方法
JP4149748B2 (ja) * 2002-06-24 2008-09-17 三菱商事プラスチック株式会社 ロータリー型量産用ｃｖｄ成膜装置及びプラスチック容器内表面へのｃｖｄ膜成膜方法
CN2595021Y (zh) * 2002-12-30 2003-12-24 北京志恒达科技有限公司 封离型射频激励co2波导激光器
KR101151419B1 (ko) * 2010-07-30 2012-06-01 주식회사 플라즈마트 Ｒｆ 전력 분배 장치 및 ｒｆ 전력 분배 방법
CN104754851B (zh) * 2013-12-31 2017-10-20 北京北方华创微电子装备有限公司 多频匹配器及等离子体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1539156A (zh) * 2001-08-08 2004-10-20 ��ķ�о����޹�˾ 带有独立的等离子体密度/化学性质和离子能量控制的双频等离子体蚀刻反应器
US20040027209A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Fixed matching network with increased match range capabilities
CN1871373A (zh) * 2003-06-19 2006-11-29 等离子控制系统有限公司 等离子体生成设备和方法以及具有可调工作周期的rf驱动电路
WO2008120946A1 (en) * 2007-04-02 2008-10-09 Sosul Co., Ltd. Apparatus for supporting substrate and plasma etching apparatus having the same
CN102438389A (zh) * 2010-09-29 2012-05-02 中微半导体设备(上海)有限公司 单一匹配网络、其构建方法和该匹配网络射频功率源系统
CN102420579A (zh) * 2011-11-16 2012-04-18 中微半导体设备(上海)有限公司 一种自动实现射频功率匹配的方法和系统
CN102586753A (zh) * 2012-03-21 2012-07-18 中微半导体设备(上海)有限公司 Mocvd设备的清洁方法

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