WO2017016204A1 - 承载装置、湿法刻蚀设备及其使用方法 - Google Patents

承载装置、湿法刻蚀设备及其使用方法 Download PDF

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Publication number
WO2017016204A1
WO2017016204A1 PCT/CN2016/071544 CN2016071544W WO2017016204A1 WO 2017016204 A1 WO2017016204 A1 WO 2017016204A1 CN 2016071544 W CN2016071544 W CN 2016071544W WO 2017016204 A1 WO2017016204 A1 WO 2017016204A1
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WIPO (PCT)
Prior art keywords
substrate
processed
heating unit
heat sources
carrying device
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PCT/CN2016/071544
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English (en)
French (fr)
Inventor
林致远
黄寅虎
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to US15/105,507 priority Critical patent/US10506720B2/en
Publication of WO2017016204A1 publication Critical patent/WO2017016204A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/068—Apparatus for etching printed circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/002—Etching of the substrate by chemical or physical means by liquid chemical etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0085—Apparatus for treatments of printed circuits with liquids not provided for in groups H05K3/02 - H05K3/46; conveyors and holding means therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a carrying device, a wet etching device, and a method of using the same.
  • the substrate to be processed is usually placed obliquely so that the etching liquid can be processed along the substrate to be processed under gravity by the substrate to be processed.
  • the surface flows, thereby maintaining a good liquid exchange rate, to avoid the problem that the etching rate is not uniform due to the stagnation of the etching liquid on the surface of the substrate to be processed.
  • the invention provides a carrying device, a wet etching device and a using method thereof, which can effectively improve the uniformity of the etching rate in the oblique wet etching process.
  • the present invention provides a carrying device for carrying a substrate to be processed in a wet etching process, the carrying device comprising:
  • a carrier body disposed under the substrate to be processed for carrying the standby
  • the substrate is disposed, and the substrate to be processed is placed obliquely;
  • the heating unit is disposed under the substrate to be processed for heating the substrate to be processed such that the temperature of the substrate to be processed is gradually increased from the top to the bottom in an oblique direction.
  • the heating unit comprises: a plurality of thermal light sources, and the light generated by the thermal light source is directed to the back surface of the substrate to be processed.
  • the distance between each of the thermal light sources and the substrate to be processed is equal, the output power of each of the thermal light sources is the same, and the projection of the top of the substrate to be processed on the heating unit is a first position. a projection of the bottom of the substrate to be processed on the heating unit is a second position;
  • the density of the provided heat source is gradually increased in the direction from the first position to the second position.
  • the distance between each of the thermal light sources and the substrate to be processed is equal, all of the thermal light sources are evenly distributed on the heating unit, and the projection of the top of the substrate to be processed on the heating unit is first. Position, the projection of the bottom of the substrate to be processed on the heating unit is a second position;
  • the output power of the heat source disposed in the heating unit in the direction from the first position to the second position is gradually increased.
  • the output power of each of the heat sources is equal, all of the heat sources are uniformly distributed on the heating unit, and a projection of the top of the substrate to be processed on the heating unit is a first position, and the Processing the bottom of the substrate on the heating unit to a second position;
  • a distance between each of the heat sources and the substrate to be processed gradually decreases in a direction from the first position to the second position in the heating unit.
  • the light generated by the thermal light source is directed perpendicularly to the back surface of the substrate to be processed.
  • the thermal light source is an LED light.
  • the carrying body comprises: a plurality of rollers, wherein the rollers of all the rollers are parallel and in the same inclined plane.
  • the present invention also provides a wet etching apparatus, comprising: A carrying device that uses the above-described carrying device.
  • the present invention also provides a method of using a wet etching apparatus, wherein the wet etching apparatus employs the above-described wet etching apparatus, and the using method includes:
  • Heating the substrate to be processed by using a heating unit such that the temperature from top to bottom on the substrate to be processed is gradually increased;
  • An etching solution is sprayed on the front side of the substrate to be processed.
  • the invention provides a carrying device, a wet etching device and a using method thereof, wherein the carrying device is used for carrying a substrate to be processed in a wet etching process, the carrying device comprises: a carrying body and a heating unit, and heating The unit is used for heating the substrate to be processed, so that the temperature from the top to the bottom of the substrate to be processed is gradually increased, thereby increasing the etching rate of the etching liquid at the bottom of the substrate to be processed, and solving the bottom of the substrate to be processed.
  • the etching solution has a low etching rate due to low flow exchange efficiency, thereby improving the uniformity of the etching rate during the oblique wet etching process.
  • FIG. 1 is a schematic diagram of a carrying device according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic structural view of a heating unit according to Embodiment 1 of the present invention.
  • FIG. 3 is a schematic structural view of still another heating unit in the first embodiment of the present invention.
  • FIG. 4 is another schematic structural view of a heating unit according to Embodiment 1 of the present invention.
  • FIG. 5 is a flowchart of a method for using a wet etching apparatus according to Embodiment 3 of the present invention.
  • the carrying device is used to carry a substrate 1 to be processed in a wet etching process.
  • the carrying device includes: The main body 2 and the heating unit 3, wherein the carrier body 2 and the heating unit 3 are disposed under the substrate 1 to be processed, and the carrier body 2 is in contact with the back surface (non-processing surface) of the substrate 1 to be processed for carrying the object to be processed.
  • the substrate 1 and the substrate 1 to be processed are placed obliquely; the heating unit 3 is used for heating the substrate 1 to be processed so that the temperature of the substrate 1 to be processed is gradually increased from the top to the bottom in the oblique direction.
  • the top of the processing substrate 1 in the present invention specifically refers to a portion of the substrate 1 to be processed which is located at the highest point when the substrate 1 to be processed is placed obliquely; the bottom portion of the processing substrate 1 in the present invention is specifically It means that when the substrate 1 to be processed is placed obliquely, the processing substrate 1 is located at a position corresponding to the lowest point.
  • the heating unit 3 heats the substrate 1 to be processed during the wet etching so that the substrate 1 to be processed in an inclined state is from top to bottom.
  • the temperature is gradually increased so that the temperature of the etching liquid 4 located at the bottom of the substrate 1 to be processed is higher than the temperature of the etching liquid 4 located at the top of the substrate 1 to be processed.
  • the corresponding etching rate is increased, so that the etching rate of the etching liquid 4 located at the bottom of the substrate 1 to be processed can be correspondingly improved. Therefore, the problem that the etching liquid 4 located at the bottom of the substrate 1 to be processed has a low etching rate due to low flow exchange efficiency, thereby improving the uniformity of the etching rate during the oblique wet etching process.
  • the carrier body 2 includes a plurality of rollers 5, and the rollers of all the rollers 5 are all parallel and in the same inclined plane. At this time, the substrate 1 to be processed is placed on the roller 5, and the inclined placement of the substrate 1 to be processed can be realized.
  • the design of the roller 5 can also facilitate the movement of the carrier body 2.
  • the heating unit 3 optionally includes a plurality of thermal light sources 6 that emit light toward the back surface of the substrate 1 to be processed.
  • the heating unit 3 is configured by using the heat source 6 to not only heat the substrate to be processed, but also provide a backlight source (a plurality of heat sources 6) for the operator, and the light generated by the back source is not affected.
  • the interference of the flow of the etching liquid 4 can facilitate the observation of the etching process by the operator.
  • the above-mentioned configuration of the heating unit 3 by using the heat source 6 is only a preferred embodiment in the embodiment, and it can provide a detection light source for the operator while heating the substrate 1 to be processed. Therefore, it is no longer necessary to separately configure the detection light source for the etching device, thereby effectively reducing the production cost of the device.
  • the above technical means does not limit the technical solution of the present application.
  • the heating unit 3 in the present application may also have other structures.
  • a back light source may be independently disposed under the substrate 1 to be processed, or may be disposed to use other than illumination. Heating units that are heated in a manner that are also within the scope of the technical solutions of the present application.
  • the heat source 6 is an LED lamp.
  • the heating unit 3 in this embodiment may adopt the following schemes:
  • FIG. 2 is a schematic structural view of a heating unit according to Embodiment 1 of the present invention.
  • the distance between each of the heat sources 6 and the substrate 1 to be processed is equal, and the output power of each of the heat sources 6 is the same.
  • the projection of the top of the processing substrate 1 on the heating unit 3 is the first position A
  • the projection of the bottom of the substrate 1 to be processed on the heating unit 3 is the second position B, along the first position A to the second position B
  • the density of the heat source 6 provided in the heating unit 3 gradually increases.
  • FIG. 3 is still another schematic structural view of a heating unit according to Embodiment 1 of the present invention.
  • the distance between each of the heat source 6 and the substrate 1 to be processed is equal, and all the heat sources 6 are evenly distributed.
  • the projection of the top of 1 on the heating unit 3 is the first position A
  • the projection of the bottom of the substrate 1 to be processed on the heating unit 3 is the second position B; in the direction from the first position A to the second position B (In the direction indicated by the arrow X in Fig. 3), the output power of the heat source 6 provided in the heating unit 3 is gradually increased.
  • FIG. 4 is another schematic structural view of a heating unit according to Embodiment 1 of the present invention. As shown in FIG. 4, the output power of each of the heat sources 6 is equal, and all the heat sources 6 are uniformly distributed.
  • the top of the substrate 1 to be processed is in the heating unit.
  • the projection on 3 is the first position A
  • the projection of the bottom of the substrate 1 to be processed on the heating unit 3 is the second position B; in the direction from the first position A to the second position B (arrow Y in Fig. 4)
  • the distance between each of the heat sources 6 in the heating unit 3 and the substrate 1 to be processed is gradually reduced.
  • the heating unit 3 is configured by using the heat source 6, the above three embodiments provided by the embodiment are only optional in the present application. It should be known to those skilled in the art that the spatial position and/or output power of the heat source 6 can be appropriately adjusted, and the energy received from the top to the bottom of the substrate 1 to be processed per unit time can be increased gradually. Other schemes are all within the scope of protection of this application, and are not listed here.
  • the light generated by the heat source 6 may be directed perpendicularly to the back surface of the substrate 1 to be processed, thereby making the heat source 6 Increased output efficiency.
  • the heat source 6 can be disposed at an interval between adjacent rollers 5 (in this case, the corresponding drawings are not given) At this time, the distance between the heat source 6 and the substrate 1 to be processed can be further reduced, and the output efficiency of the heat source 6 can be further improved.
  • Embodiment 1 of the present invention provides a carrying device for carrying a substrate to be processed in a wet etching process, wherein the carrying device comprises: a carrying body and a heating unit, and the heating unit is configured to heat the substrate to be processed So that the temperature from the top to the bottom of the substrate to be processed is gradually increased, so that the etching rate of the etching liquid at the bottom of the substrate to be processed is improved, and the etching efficiency of the etching liquid at the bottom of the substrate to be processed is solved.
  • the lower etch rate is lower, which improves the uniformity of the etch rate during the oblique wet etching process.
  • the second embodiment of the present invention provides a wet etching apparatus.
  • the wet etching apparatus includes: a carrying device, wherein the carrying device adopts the carrying device provided in the first embodiment.
  • the carrying device adopts the carrying device provided in the first embodiment.
  • FIG. 5 is a flowchart of a method for using a wet etching apparatus according to Embodiment 3 of the present invention.
  • the wet etching apparatus is the wet etching apparatus in the second embodiment.
  • the use of wet etching equipment includes:
  • Step 101 The substrate to be processed is placed obliquely on the carrier body.
  • Step 102 Heating the substrate to be processed by the heating unit so that the temperature from the top to the bottom on the substrate to be processed is gradually increased.
  • Step 103 Spray the etching solution on the front side of the substrate to be processed.
  • the substrate to be processed may be preheated in step 102, and then the substrate to be processed is wet etched through step 103. At the same time, step 102 The heat treatment is continued to maintain a gradual increase in temperature from top to bottom on the substrate to be processed.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
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Abstract

一种承载装置、湿法刻蚀设备及其使用方法，其中，该承载装置包括：设置于待处理基板（1）下方的承载主体（2）和加热单元（3），承载主体（2）用于承载该待处理基板（1），且使得该待处理基板（1）呈倾斜放置，加热单元（3）用于对该待处理基板（1）进行加热，以使得该待处理基板（1）上由顶部至底部的温度逐渐升高。通过在待处理基板（1）下方设置加热单元（3），以使得待处理基板（1）上由顶部至底部的温度逐渐升高，从而可提高位于待处理基板（1）底部的刻蚀液（4）的刻蚀速率，解决了位于待处理基板（1）底部的刻蚀液（4）因流动交换效率较低而造成刻蚀速率偏低的问题，进而提升了倾斜式湿法刻蚀过程中刻蚀速率的均一性。

Description

承载装置、湿法刻蚀设备及其使用方法 技术领域
本发明涉及显示技术领域，特别涉及一种承载装置、湿法刻蚀设备及其使用方法。
背景技术
现有的湿法刻蚀设备，为了改善大面积待处理基板的湿刻均匀度，通常将待处理基板呈现倾斜放置，以使刻蚀液在待处理基板上能够在重力作用下沿待处理基板的表面流动，从而保持良好的液体交换率，以避免刻蚀液在待处理基板表面的停滞造成刻蚀速率不均一的问题。
然而，在实际操作中发现，在待处理基板上处于较低位置的区域，原本喷洒的刻蚀液以及由高处流下的刻蚀液二者汇集，从而使得待处理基板上处于较低位置的区域会有刻蚀液堆积的现象，造成该处刻蚀液流动交换效率较低，(刻蚀液流动交换效率与刻蚀速率成正比)从而使得较底位置处的刻蚀速率较慢。与此同时，在待处理基板上处于较高位置的区域，由于不存在刻蚀液堆积的现象，因此在较高位置处的刻蚀速率正常。
由上述内容可见，现有技术中的这种倾斜式湿法刻蚀仍存在刻蚀速率不均一的问题。
发明内容
本发明提供一种承载装置、湿法刻蚀设备及其使用方法，可有效的提升倾斜式湿法刻蚀过程中刻蚀速率的均一性。
为实现上述目的，本发明提供了一种承载装置，用于在湿法刻蚀过程中承载待处理基板，所述承载装置包括：
承载主体，设置于所述待处理基板的下方，用于承载所述待处 理基板，且使得所述待处理基板呈倾斜放置；
加热单元，设置于所述待处理基板的下方，用于对所述待处理基板进行加热，以使得所述待处理基板上沿倾斜方向由顶部至底部的温度逐渐升高。
可选地，所述加热单元包括：多个热光源，所述热光源产生的光线射向所述待处理基板的背面。
可选地，每个热光源与所述待处理基板之间的距离相等，每个所述热光源的输出功率相同，所述待处理基板的顶部在所述加热单元上的投影为第一位置，所述待处理基板的底部在所述加热单元上的投影为第二位置；
在所述加热单元中沿由所述第一位置至所述第二位置的方向上，所设置的热光源的密度逐渐增大。
可选地，每个热光源与所述待处理基板之间的距离相等，全部所述热光源在加热单元上均匀分布，所述待处理基板的顶部在所述加热单元上的投影为第一位置，所述待处理基板的底部在所述加热单元上的投影为第二位置；
所述加热单元中沿由所述第一位置至所述第二位置的方向，所设置的热光源的输出功率逐渐增大。
可选地，每个所述热光源的输出功率相等，全部所述热光源在加热单元上均匀分布，所述待处理基板的顶部在所述加热单元上的投影为第一位置，所述待处理基板的底部在所述加热单元上的投影为第二位置；
所述加热单元中沿由所述第一位置至所述第二位置的方向，各热光源与所述待处理基板之间的距离逐渐减小。
可选地，所述热光源产生的光线垂直射向所述待处理基板的背面。
可选地，所述热光源为LED灯。
可选地，所述承载主体包括：多个滚轮，全部所述滚轮的滚轴均平行且处于同一倾斜平面。
为实现上述目的，本发明还提供了一种湿法刻蚀设备，包括： 承载装置，该承载装置采用上述的承载装置。
为实现上述目的，本发明还提供了一种湿法刻蚀设备的使用方法，其中，所述湿法刻蚀设备采用上述的湿法刻蚀设备，所述使用方法包括：
将所述待处理基板倾斜放置于所述承载主体上；
利用加热单元对所述待处理基板进行加热，以使得所述待处理基板上由顶部至底部的温度逐渐升高；
将刻蚀液喷洒在所述待处理基板的正面。
本发明具有以下有益效果：
本发明提供了一种承载装置、湿法刻蚀设备及其使用方法，其中，该承载装置用于在湿法刻蚀过程中承载待处理基板，该承载装置包括：承载主体和加热单元，加热单元用于对待处理基板进行加热，以使得待处理基板上由顶部至底部的温度逐渐升高，从而可提高位于待处理基板底部的刻蚀液的刻蚀速率，解决了位于待处理基板底部的刻蚀液因流动交换效率较低而造成刻蚀速率偏低的问题，进而提升了倾斜式湿法刻蚀过程中刻蚀速率的均一性。
附图说明
图1为本发明实施例一提供的一种承载装置的示意图；
图2为本发明实施例一中加热单元的一种结构示意图；
图3为本发明实施例一中加热单元的又一种结构示意图；
图4为本发明实施例一中加热单元的另一种结构示意图；
图5为本发明实施例三提供的一种湿法刻蚀设备的使用方法的流程图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图对本发明提供的承载装置、湿法刻蚀设备及其使用方法进行详细描述。
图1为本发明实施例一提供的一种承载装置的示意图，如图1所示，该承载装置用于在湿法刻蚀过程中承载待处理基板1，具体地，该承载装置包括：承载主体2和加热单元3，其中，承载主体2和加热单元3均设置于待处理基板1的下方，承载主体2与所述待处理基板1的背面(非处理面)接触，用于承载待处理基板1且使得待处理基板1呈倾斜放置；加热单元3用于对待处理基板1进行加热，以使得待处理基板1上沿倾斜方向由顶部至底部的温度逐渐升高。
需要说明的是，本发明中的处理基板1的顶部具体是指，待处理基板1呈倾斜放置时，待处理基板1上位于最高点所对应的部位；本发明中的处理基板1的底部具体是指，待处理基板1呈倾斜放置时，处理基板1上位于最低点所对应的部位。
本发明的技术方案，通过在待处理基板1的下方设置加热单元3，加热单元3在湿法刻蚀过程中对待处理基板1进行加热，以使得呈倾斜状态的待处理基板1由顶部至底部的温度逐渐升高，从而使得位于待处理基板1底部的刻蚀液4的温度高于位于待处理基板1顶部的刻蚀液4的温度。与此同时，随着位于待处理基板1底部的刻蚀液4的温度的提升，相应的刻蚀速率提升，因此位于待处理基板1底部的刻蚀液4的刻蚀速率可以得到相应提升，从而解决了位于待处理基板1底部的刻蚀液4因流动交换效率较低而造成刻蚀速率偏低的问题，进而提升了在进行倾斜式湿法刻蚀过程中刻蚀速率的均一性。
在本实施例中，承载主体2包括：多个滚轮5，全部滚轮5的滚轴均平行且处于同一倾斜平面。此时将待处理基板1置于滚轮5上，可实现对待处理基板1的倾斜放置。当然，滚轮5的设计还可以方便对承载主体2进行移动。
需要说明的是，上述承载主体2采用滚轮5设计的情况仅为本实施例中的一种可选方案，这并不会对本申请的技术方案产生限制。
在现有技术中，操作人员为实现对刻蚀过程进行观察或监测，往往是在待处理基板1的上方设置一光源，然后将光源产生的光线射向待处理基板1的正面(处理面)，最后通过人眼对待处理基板1的刻蚀过程进行观察。然而，在实际操作过程中，这种基于正面光源 的观察或监测，容易受刻蚀液4流动的视觉干扰，再加上对于金属导线密度较高的产品或是进行小部位(例如：沟道部位)的刻蚀工序，操作人员的肉眼观察会更加困难，进而影响判断。
为解决上述技术问题，可选地，加热单元3包括：多个热光源6，热光源6产生的光线射向待处理基板1的背面。本实施例中利用热光源6来构成加热单元3，不仅能实现对待处理基板1进行加热，而且还能为操作人员提供背面光源(多个热光源6)，该背面光源所产生光线不会受到刻蚀液4流动的干扰，可方便操作人员对刻蚀过程进行观察。
需要说明的是，上述利用热光源6来构成加热单元3的情况仅为本实施例中的一种优选方案，其在实现对待处理基板1进行加热的同时，还能为操作人员提供检测光源，因此无需再为刻蚀设备单独配置检测光源，从而能有效的降低设备的生产成本。上述技术手段不会对本申请的技术方案产生限制，本申请中的加热单元3还可以为其他结构，例如也可以在待处理基板1的下方独立设置一背面光源，或者设置利用除了光照以外的其它方式进行加热的加热单元，这些也应属于本申请技术方案所保护的范围。
本实施例中，可选地，热光源6为LED灯。
当利用热光源6来构成加热单元3时，为实现待处理基板1上由顶部至底部的温度逐渐升高，本实施例中的加热单元3可采用如下几种方案：
图2为本发明实施例一中加热单元的一种结构示意图，如图2所示，每个热光源6与待处理基板1之间的距离相等，每个热光源6的输出功率相同，待处理基板1的顶部在加热单元3上的投影为第一位置A，待处理基板1的底部在加热单元3上的投影为第二位置B，在沿由第一位置A至第二位置B的方向上(图2中箭头X所指方向)，加热单元3中所设置的热光源6的密度逐渐增大。
在图2中，由于每个热光源6与待处理基板1之间的距离相等，每个热光源6的输出功率相同，则单位时间内各热光源6输出至待处理基板1的能量是相等的。又由于在沿由第一位置A至第二位置B 的方向上，加热单元3中所设置的热光源6的密度逐渐增大，则单位时间内待处理基板1上由顶部至底部所接收到的能量逐渐增多，相应地，待处理基板1上由顶部至底部的温度逐渐升高。
图3为本发明实施例一中加热单元的又一种结构示意图，如图3所示，每个热光源6与待处理基板1之间的距离相等，全部热光源6均匀分布，待处理基板1的顶部在加热单元3上的投影为第一位置A，待处理基板1的底部在加热单元3上的投影为第二位置B；在沿由第一位置A至第二位置B的方向上(图3中箭头X所指方向)，加热单元3中所设置的热光源6的输出功率逐渐增大。
在图3中，由于每个热光源6与待处理基板1之间的距离相等，全部热光源6均匀分布，则待处理基板1上各相同面积的区域所对应的热光源6的数量是相等的。又由于在沿由第一位置A至第二位置B的方向上，加热单元3中所设置的热光源6的输出功率逐渐增大，则单位时间内待处理基板1上由顶部至底部所接收到的能量逐渐增多，相应地，待处理基板1上由顶部至底部的温度逐渐升高。
图4为本发明实施例一中加热单元的另一种结构示意图，如图4所示，每个热光源6的输出功率相等，全部热光源6均匀分布，待处理基板1的顶部在加热单元3上的投影为第一位置A，待处理基板1的底部在加热单元3上的投影为第二位置B；在沿由第一位置A至第二位置B的方向上(图4中箭头Y所指方向)，加热单元3中各热光源6与待处理基板1之间的距离逐渐减小。
在图4中，由于每个热光源6的输出功率相等，且在沿由第一位置A至第二位置B的方向上，加热单元3中各热光源6与待处理基板1之间的距离逐渐减小，所以各热光源6输出至待处理基板1上的能量逐渐减小(热光源6在输出过程中随着距离的增加，相应的能量损耗增多，到达目标位置的能量减少)。又由于全部热光源6均匀分布，则单位时间内待处理基板1上由顶部至底部所接收到的能量逐渐增多，相应地，待处理基板1上由顶部至底部的温度逐渐升高。
需要说明的是，图4中全部热光源6处于同一水平面的情况仅起到示例性的作用。
此外，当利用热光源6来构成加热单元3时，本实施例提供的上述三种实施方案仅为本申请中的可选方案。本领域的技术人员应该知晓的是，通过对热光源6的空间位置和/或输出功率进行适当调整，且能满足单位时间内待处理基板1上由顶部至底部所接收到的能量逐渐增多的其他方案，均应属于本申请的保护范围，此处不再一一列举。
为实施例中，为减小各热光源6在向待处理基板1进行加热过程中的能量损耗，可将热光源6产生的光线垂直射向待处理基板1的背面，从而使得热光源6的输出效率提升。
此外，当承载主体2包括多个滚轮5，加热单元3包括多个热光源6时，可将热光源6设置在相邻滚轮5之间的间隔处(此种情况未给出相应的附图)，此时热光源6与待处理基板1之间的距离可进一步缩小，热光源6的输出效率会得到进一步提升。
本发明实施例一提供了一种承载装置，该承载装置用于在湿法刻蚀过程中承载待处理基板，其中该承载装置包括：承载主体和加热单元，加热单元用于对待处理基板进行加热，以使得待处理基板上由顶部至底部的温度逐渐升高，从而使得位于待处理基板底部的刻蚀液的刻蚀速率得到提升，解决了位于待处理基板底部的刻蚀液因流动交换效率较低而造成刻蚀速率偏低的问题，进而提升了倾斜式湿法刻蚀过程中刻蚀速率的均一性。
本发明实施例二提供了一种湿法刻蚀设备，该湿法刻蚀设备包括：承载装置，其中，承载装置采用上述实施例一中提供的承载装置，具体内容可参见上述实施例一中的描述，此处不再赘述。
图5为本发明实施例三提供的一种湿法刻蚀设备的使用方法的流程图，如图5所示，该湿法刻蚀设备为上述实施例二中的湿法刻蚀设备，该湿法刻蚀设备的使用方法包括：
步骤101：将待处理基板倾斜放置于承载主体上。
步骤102：利用加热单元对待处理基板进行加热，以使得待处理基板上由顶部至底部的温度逐渐升高。
步骤103：将刻蚀液喷洒在待处理基板的正面。
需要说明的是，在将待处理基板倾斜放置于承载主体上之后，可以先通过步骤102对待处理基板进行预热，然后再通过步骤103对待处理基板进行湿法刻蚀，与此同时，步骤102的加热处理继续进行，以维持待处理基板上由顶部至底部的温度逐渐升高。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

  1. 一种承载装置，用于在湿法刻蚀过程中承载待处理基板，所述承载装置包括：
    承载主体，设置于所述待处理基板的下方，用于承载所述待处理基板，且使得所述待处理基板呈倾斜放置；
    加热单元，设置于所述待处理基板的下方，用于对所述待处理基板进行加热，以使得所述待处理基板上沿倾斜方向由顶部至底部的温度逐渐升高。
  2. 根据权利要求1所述的承载装置，其特征在于，所述加热单元包括：多个热光源，所述热光源产生的光线射向所述待处理基板的背面。
  3. 根据权利要求2所述的承载装置，其特征在于，每个热光源与所述待处理基板之间的距离相等，每个所述热光源的输出功率相同，所述待处理基板的顶部在所述加热单元上的投影为第一位置，所述待处理基板的底部在所述加热单元上的投影为第二位置；
    在所述加热单元中沿由所述第一位置至所述第二位置的方向上，所设置的热光源的密度逐渐增大。
  4. 根据权利要求2所述的承载装置，其特征在于，每个热光源与所述待处理基板之间的距离相等，全部所述热光源在加热单元上均匀分布，所述待处理基板的顶部在所述加热单元上的投影为第一位置，所述待处理基板的底部在所述加热单元上的投影为第二位置；
    所述加热单元中沿由所述第一位置至所述第二位置的方向，所设置的热光源的输出功率逐渐增大。
  5. 根据权利要求2所述的承载装置，其特征在于，每个所述热光源的输出功率相等，全部所述热光源在加热单元上均匀分布，所述 待处理基板的顶部在所述加热单元上的投影为第一位置，所述待处理基板的底部在所述加热单元上的投影为第二位置；
    所述加热单元中沿由所述第一位置至所述第二位置的方向，各热光源与所述待处理基板之间的距离逐渐减小。
  6. 根据权利要求2中所述的承载装置，其特征在于，所述热光源产生的光线垂直射向所述待处理基板的背面。
  7. 根据权利要求2中所述的承载装置，其特征在于，所述热光源为LED灯。
  8. 根据权利要求1-7中任一所述承载装置，其特征在于，所述承载主体包括：多个滚轮，全部所述滚轮的滚轴均平行且处于同一倾斜平面。
  9. 一种湿法刻蚀设备，其特征在于，包括：如上述权利要求1-8中任一所述的承载装置。
  10. 一种如权利要求9所述的湿法刻蚀设备的使用方法，所述使用方法包括：
    将所述待处理基板倾斜放置于所述承载主体上；
    利用加热单元对所述待处理基板进行加热，以使得所述待处理基板上由顶部至底部的温度逐渐升高；
    将刻蚀液喷洒在所述待处理基板的正面。
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CN1975983A (zh) * 2005-11-28 2007-06-06 株式会社日立高科技 基板处理装置、基板处理方法以及基板的制造方法
CN105140167A (zh) * 2015-07-28 2015-12-09 合肥鑫晟光电科技有限公司 承载装置、湿法刻蚀设备及其使用方法

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