WO2017005135A1 - 全裸晶封装可调光光电一体led照明组件及制造工艺 - Google Patents

全裸晶封装可调光光电一体led照明组件及制造工艺 Download PDF

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WO2017005135A1
WO2017005135A1 PCT/CN2016/088052 CN2016088052W WO2017005135A1 WO 2017005135 A1 WO2017005135 A1 WO 2017005135A1 CN 2016088052 W CN2016088052 W CN 2016088052W WO 2017005135 A1 WO2017005135 A1 WO 2017005135A1
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bare
substrate
chip
pad
crystal
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PCT/CN2016/088052
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English (en)
French (fr)
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李克坚
桑钧晟
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中山昂欣科技有限责任公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating

Definitions

  • the invention relates to the field of LED illumination driving power supply technology and semiconductor packaging technology.
  • LED lighting is a revolutionary change in the field of lighting. Its product and technology development goals and trends are to further improve performance, guarantee service life and reduce costs. As a semiconductor lighting, optoelectronic integrated packaging is an important technological development direction and approach.
  • LED packaging technology is mostly developed and evolved on the basis of discrete device packaging technology, but it has great speciality.
  • LED package is mainly to complete the input and output power, protect the normal operation of the die, output visible light, electrical parameters and optical parameters design and technical requirements, can not simply use the traditional discrete device package for LED.
  • the LED pin package uses lead frames for various packaged pins. It was the first package to be successfully put on the market. In 2002, surface mount packaged LEDs (SMDLEDs) were gradually accepted by the market. The package-to-SMD is in line with the development trend of the entire electronics industry.
  • the latest COB package can directly package multiple chips on a suitable substrate and directly dissipate heat through the substrate.
  • the COB light source module can effectively avoid the disadvantages such as spot light and glare of the discrete light source device combination, and can also be added by appropriate
  • the combination of red chips effectively improves the color rendering of the light source without reducing the efficiency and lifetime of the light source (more than 90 has been achieved).
  • the COB light source module can make assembly and production of the lighting fixture factory simpler and more convenient. In production, existing process technologies and equipment can support large-scale manufacturing of high-yield COB light source modules.
  • COB packaging technology is mainly used for light source packaging of LED as a single device type, because the driving power supply part is relatively complicated, involving various types of electronic components, currently The various electronic components involved in the drive power supply can be used separately after being packaged separately.
  • the drive power source is a converter that converts the power supply to a specific voltage current in each case to drive the LED to emit light.
  • the output must be a constant current source that can change the voltage as the LED forward voltage drop value changes.
  • the simplest type of driving power supply is a resistor-capacitor step-down circuit, but its current fluctuates greatly with voltage, is not resistant to impact, and will seriously affect the life of LED.
  • the power factor is low and can only be used for some low-power LED lighting situations that are not required. And the effect is poor.
  • the constant current diode-based driving power supply is the second type.
  • the constant current diode was originally mainly used for instrumentation, and was later used for some low-power LED lamps due to its constant current characteristics.
  • As a constant current drive for LED illumination it has the advantages of simple circuit structure and low cost.
  • the current dynamic range of the constant current diode is only 30V, which is lower than the normal voltage fluctuation range of the power grid sometimes up to hundreds of volts.
  • the system efficiency is low, and the temperature rise will lead to the LED light decay, so it is not suitable for general illumination, and at the same time due to the limitations of the constant current diode production process.
  • the consistency of performance is not good and the proportion of products that are suitable for use is low, and it is easy to cause serious problems that the product quality cannot be stabilized in large-scale use.
  • the LED lighting driving power supply based on IC chip is currently a mainstream solution for mass use, has good constant current precision and various functions, and is mainly divided into two types of switching power supply and linear power supply.
  • Switching power supply type is available in both isolated and non-isolated versions.
  • the isolated type is suitable for constant current output with low voltage and high current. It has many external components and large volume. It is mainly used for external power supply.
  • Non-isolated type is suitable for high. Low voltage output, relatively small volume, high efficiency, mainly used for built-in power supply.
  • the switching power supply is complex, involving a large number of components, including electrolytic capacitors, so it is not suitable for full-die integrated packaging.
  • the linear IC chip LED driving power solution has the advantages of relatively simple circuit, few peripheral components, small size, low cost, and easy integration.
  • DOB Driver on Board
  • the latest development is that the packaged LEDs that have used COB packaging technology and the power supplies of various individual package components are on the same board.
  • OSRAM product PrevaLED Core AC PRO light engines Such as the recently launched OSRAM product PrevaLED Core AC PRO light engines.
  • the biggest drawback of the linear driving power solution is the heat dissipation problem, and the heat dissipation is particularly concentrated on the linear power IC chip and the MOSFET power tube.
  • the traditional IC chip and component package use a plastic case, the heat conduction is poor, and the heat dissipation problem of the linear drive power source will greatly reduce the stability and reliability of the entire system. If the IC chip and the components of the driving power source are directly packaged in a bare crystal form on a substrate having good thermal conductivity and insulation, the problem can be solved and the related cost can be reduced.
  • the constant current diode Since the circuit of the constant current diode is very simple and easy to be packaged in a bare crystal, the constant current diode is both a simple device and a simple driving circuit. Therefore, the die current diode die package has little value for the bare die package of the driving IC chip. Because the driver IC chip is not only complicated to drive the IC chip itself, but also the driving power supply scheme based on the driver IC chip is much more complicated.
  • the packaging technology currently used for IC chips and components is very different from the COB packaging technology.
  • the packaging technology of IC chips and components that is, semiconductor packaging technology, has been developed for a long time. Because the package is necessary for IC chips and components, it is also essential that IC chips and components must be isolated from the outside world. Preventing impurities in the air from corroding the chip circuit or component materials, resulting in a decrease in electrical performance, and the packaged chips and components are also easy to install and transport.
  • the existing packaging technology is to separately package the IC chip or component with insulating plastic or ceramic material. The quality of the packaging technology directly affects the performance of the chip itself and the design and manufacture of the printed circuit board PCB connected thereto.
  • DIP Device In-line Package
  • SMT Surface Mounting Technology
  • semiconductor packages There are many specific package types for semiconductor devices. They can be divided into pin-inserted, surface-mount, and advanced packages according to the package's outline, size, and structure. From DIP, SOP, QFP, PGA, BGA to CSP to SIP, the technical indicators are more advanced than the first generation.
  • semiconductor packaging has undergone three major innovations: the first was in the 1980s from pin-in package to surface-mount package, which greatly increased the assembly density on printed circuit boards; the second was in The emergence of spherical matrix packages in the 1990s met the market demand for high pins and improved the performance of semiconductor devices; now wafer-level packaging, system packaging, etc. are the third innovations that are now taking place.
  • the technical solution adopted by the present invention is: experimentally determining an LED lighting linear driving power supply optimization scheme suitable for a full-die package and determining a specific circuit, designing a wiring pattern of a fully bare-packaged LED lighting component according to a specific circuit design, and selecting a suitable heat conductive insulating material substrate and The wiring pattern is printed on the substrate by conductive material to become a printed circuit, and various process steps of the full-die package are verified by experiments and the corresponding bare LED, bare crystal IC chip, bare crystal rectifier diode, bare crystal MOSFET and resistor are all used in these processes.
  • the package is integrated into the printed circuit on the above substrate and verified by the final test.
  • the specific circuit of the present invention has various manifestations, including according to a suitable full-die package.
  • the circuit schematic obtained by the LED illumination linear drive power optimization scheme, the layout diagram designed according to the above schematic diagram, and the actual complete circuit of the component after the finished printed circuit and the completed full-die package are all the specific circuits of the present invention.
  • the full-die package dimmable photoelectric integrated LED lighting component of the invention is:
  • the anode and the positive pole of the two bare crystal rectifier diodes are respectively connected at two ends of the alternating current bus bar, and the positive pole of the direct current formed by the four bare crystal rectifier diodes is connected to the anode of the tandem bare cathode light emitting diode (LED).
  • LED light emitting diode
  • the GATE pad of the bare IC chip is connected to the G pad (gate) of the external die MOSFET; the Sense pad of the bare IC chip is connected Place the S pad (source) of the bare MOSFET, and connect the resistor Rcs to the ground; the GND pad of the die IC is connected to the ground; the D pad (drain) of the bare MOSFET is connected to the bare LED. LED negative.
  • the above bare crystal IC chip is a linear constant current LED driver IC chip, and the essential parts thereof include an internal clamp circuit (Clamp) and a UVLO (Under Voltage Lockout) at the VCC end; and a ground line terminal (GND); and an internal control (Control) and driver (Driver) part and driver GATE terminal and current sampling / setting SENSE terminal.
  • the value of the resistor R1 described above is set according to the parameters of the bare IC chip.
  • the above thermally conductive insulating material substrate can be any material that meets the requirements, and the ceramic substrate is currently one of the best choices.
  • the bare crystal IC chip and the bare crystal MOSFET need to have sufficient physical distance to avoid the heat dissipation of the MOSFET affecting the normal operation of the bare crystal IC chip.
  • the surface of the bare IC chip needs to be covered with a heat conductive insulating opaque material to prevent the light from affecting the bare crystal IC chip, thereby causing abnormal performance.
  • the heat conductive insulating opaque material may use a heat conductive opaque silicone.
  • the manufacturing process flow of a full-die package dimmable photoelectric integrated LED lighting component in the present invention is:
  • the first step, the substrate manufacturing process is a first step, the substrate manufacturing process:
  • the second step is the solid crystal process:
  • a set number of bare-state light-emitting diodes are fixed at a specified position with a viscous heat-conductive insulating material, and the above-mentioned viscous heat-conductive insulating material is used as a thermal conductive silica gel, and baked and cured.
  • four bare crystal rectifier diodes, one bare crystal IC chip and one bare crystal MOSFET are fixed at a specified position with a viscous heat conductive conductive material, and baked and cured.
  • the thick thermally conductive conductive material is silver glue;
  • the conductive wires are soldered at specified positions of the devices to connect the printed circuit lines on the substrate, and all the circuit connections on the substrate are completed.
  • the wires can be of various types of conductive materials, and gold wires are now used;
  • the second step and the third step of the above process flow when the bare LED is used in a flip chip package form According to the requirements of the flip-chip process flow, the process flow involving the bare crystal IC chip and other bare crystal devices remains basically unchanged.
  • the fourth step is to test the process flow:
  • the thermal insulation opaque material is used on the substrate to form a layer (dam) of set height and width at the position set by the wiring diagram, and baked and cured.
  • the thermally conductive and insulating opaque material is currently used as a thermally conductive opaque silica gel;
  • thermoly conductive and insulating transparent material containing a known proportion of phosphors Preparing a thermally conductive and insulating transparent material containing a known proportion of phosphors according to design requirements, and injecting the thermally conductive and insulating transparent material containing the known relative proportion of phosphors into the space formed by the above-mentioned ring layer on the substrate of the completed dam Setting the height and performing baking curing, and the thermally conductive and transparent transparent material containing the known related proportion phosphor is used as the heat conductive transparent silica gel;
  • the first to third and fifth to sixth five-step process flow is the basic process flow, which is the necessary process flow for completing the full-die package, and the fourth and seventh process processes are Auxiliary process.
  • the invention has the beneficial effects that the heat dissipation problem existing in the existing LED lighting linear driving power source can be effectively solved, the performance and quality consistency of the lighting system are greatly improved, the numerous production links involved in the existing LED lighting products are reduced, and Massive automation Production of optoelectronic integrated components.
  • FIG. 1 is a typical application circuit diagram of a linear power supply scheme according to an embodiment of the present invention
  • FIG. 2 is a surface structure diagram of a bare crystal linear driving IC chip RC001B according to an embodiment of the present invention
  • FIG. 3 is a circuit schematic diagram of a specific circuit of a full-die package according to an embodiment of the present invention.
  • FIG. 4 is a basic internal structure diagram of a die IC chip required for an embodiment of the present invention.
  • FIG. 5 is a waveform diagram of a specific circuit of a full-die package according to an embodiment of the present invention.
  • FIG. 6 is a circuit diagram and a printed circuit diagram of a full-die package specific circuit according to an embodiment of the present invention.
  • FIG. 7 is a structural diagram and a line binding diagram of a full-die package component according to an embodiment of the present invention.
  • FIG. 8 is a scale diagram of a full-die package component according to an embodiment of the present invention.
  • the LED lighting linear power supply optimization scheme based on RC001B and suitable for full-die package is determined experimentally.
  • the specific circuit is determined.
  • the circuit principle of the above specific circuit is shown in Figure 3.
  • the specific circuit only retains the rectifier bridge and linear IC chip. MOSFET and two resistors R1 and Rcs;
  • the linear constant current LED driving IC chip RC001B is not used in the above specific circuit. All functions, Figure 4 shows the necessary parts related to the LED lighting linear drive optimization scheme and specific circuit in the linear constant current LED driver IC chip, including the internal clamp circuit (Clamp) and UVLO (Under Voltage Lockout) at the VCC end. ); also includes the ground terminal (GND); also includes internal control (Contro1) and driver (Driver) and driver GATE terminal and current sampling / setting SENSE terminal.
  • the above internal control and drive section relates to a specific mechanism.
  • a linear constant current LED driver IC chip having the above-described corresponding functions is essential and necessary to implement the above specific circuit, and any specific mechanism for realizing the corresponding function is equivalent.
  • the peak voltage after the rectifier bridge in the above specific circuit must be greater than the set serial bare LED voltage VLED, and the post-bridge voltage has peaks and troughs.
  • the bare crystal IC chip automatically turns on the tandem LED in series when the sinusoidal wave rises to reach the VLED.
  • the excess voltage drop is borne by the MOSFET, and the VLED remains unchanged when the voltage drops.
  • the excess voltage drop assumed is gradually reduced, and when it is lower than VLEAD, the output current is zero. Only when the voltage reaches VLED, there is an output current, and the LEDs in series will be lit.
  • the on-time and wavelength-to-time ratio are the conduction ratio.
  • VLED value it is very important to set the VLED value. If the value is too high, the conduction ratio is low, that is, the illumination time is short, the LED utilization rate is low, and the value is too low. Efficiency, and cause more power consumption of the MOSFET during boosting, so the VLED setting is adjusted and optimized according to actual needs.
  • the linear drive IC chip samples the LED current through the Rcs resistor and compares it with the IC internal reference voltage Vref to generate a control signal to achieve the target of the LED constant current output.
  • FIG. 6 is a typical wiring pattern based on the above specific circuit.
  • the bare crystal IC chip and the bare MOSFET must maintain a sufficient physical distance on the substrate.
  • the heat generated by the bare MOSFET seriously affects the normal performance of the bare IC chip.
  • the system is abnormal.
  • the performance of the bare die IC chip is normal. It can be seen that the effect of the full die package on the physical and electrical properties of each device is different from that of the devices. The case of separate packaging.
  • linear drive IC chips with built-in MOSFETs include BP5112 (Shanghai Jingfeng Mingyuan Semiconductor Co., Ltd.), MT7601 (Mexico Technology (Beijing) Co., Ltd.), SM2082 (Shenzhen Mingwei Electronics Co., Ltd.), etc.
  • the built-in MOSFET linear drive IC chip also poses a relatively large problem when used for higher power LED illumination.
  • the conductive material is printed on the heat conductive insulating material substrate to become a corresponding printed circuit, and then in the above printed circuit, the bare crystal LED and the bare crystal of all the devices including the IC chip are all packaged to the above printed circuit.
  • the anode and the cathode of the two bare-crystal rectifier diodes are respectively connected to the two ends of the AC bus, and the DC-connected positive electrode formed by the four bare-crystal rectifier diodes is connected to the anode of the series-connected bare-state light-emitting diode (LED).
  • LED bare-state light-emitting diode
  • the first step, the substrate manufacturing process is a first step, the substrate manufacturing process:
  • the heat-conductive insulating substrate white plate is manufactured according to the required specifications.
  • the ceramic substrate is used, and the ceramic white plate having a thickness of 1 mm per unit area of 28 mm ⁇ 28 mm is fired, and each individual ceramic piece contains four unit ceramic pieces, and each other Leave a cutting line for subsequent sub-boarding;
  • the LED lighting linear driving power supply optimization scheme suitable for the full-die package is determined.
  • the circuit schematic diagram of the specific circuit is determined as shown in FIG. 3, and then the wiring pattern is determined according to the specific circuit circuit schematic diagram shown in FIG. 6, and the above wiring pattern is known.
  • the technology prints the conductive material onto the substrate whiteboard, and then bakes and solidifies it into a printed circuit.
  • the wiring pattern is a design drawing, and the printed circuit is printed.
  • the road is already an actual conductive circuit printed on the ceramic substrate.
  • the conductive material used in the printed circuit of the present invention is a silver-containing material; in the relevant designated position shown in FIG. 7, the appropriate resistance value R1 is marked with silver glue (labeled as The solid long square on the left side of R1 and Rcs (the solid long square marked on the right side of Rcs) are fixed at the specified position for baking and curing;
  • the second step is the solid crystal process:
  • a set number of bare-crystal light-emitting diodes are fixed at a specified position with a heat-conductive insulating material, and baked and solidified.
  • the above-mentioned heat-conductive insulating material is a heat-conductive silicone material, and then,
  • four bare-crystal rectifier diodes (labeled as four solid small squares around the MB6S letter) and a bare-crystal linear driver IC chip (marked as a solid small above the RC001B letter) are made of a thermally conductive material.
  • a bare crystal MOSFET (marked as a solid square above the MOS letter) is fixed at a specified position and baked and cured.
  • the above thermally conductive conductive material is silver paste;
  • the conductive wires are soldered at specified positions of the respective devices to connect the printing on the substrate.
  • Circuit circuit, complete all circuit on the substrate is turned on, in the case of the invention, the above conductive wire uses gold wire;
  • the fourth step is to test the process flow:
  • a thermally conductive insulating opaque material is used on the substrate to be placed at a set position to form an outer ring layer having a diameter of 24 mm and an inner ring layer having a diameter of 7 mm.
  • the height of the layer is about 1 mm, and then baked and cured; in the case of the invention, the thermally conductive and insulating opaque material is a heat conductive opaque silica gel; and the inner ring layer is simultaneously covered with the surface of the bare crystal linear driving IC chip to solve the bare crystal IC.
  • the thermally conductive and insulating transparent material containing the relevant proportion of phosphor is prepared according to the design requirements and the known process, and the transparent conductive transparent material containing the phosphor is injected into the space formed by the inner and outer ring layers on the substrate of the completed dam.
  • the height of the layer is as shown in FIG. 8 and is baked and solidified.
  • the conductive transparent material containing phosphor is a transparent transparent silica gel containing phosphor;
  • each unit substrate is no longer connected with other unit substrates.
  • the above-mentioned substrate that has completed all the process flow turn on the power line corresponding to 220V voltage, test and obtain relevant optical and electrical parameters, confirm that all the process flows have been completed to meet the corresponding requirements, and sort and classify according to relevant parameters.
  • the above-mentioned first to third and fifth to sixth five-step process flow is a basic process flow, which is a necessary process flow for completing a full-die package, and the fourth and seventh process processes are auxiliary processes, mainly to ensure products. Quality and end product use are not the processes that must be in a fully die package.
  • a full-die package dimmable optoelectronic integrated LED lighting component with a power of 6W is taken as a typical implementation case, and specific device sources and parameters are set as follows:
  • bare crystal LEDs bare high voltage LEDs from Sanan Optoelectronics Co., Ltd. product model S-30BBHUP-B;
  • the resistance of R1 is 820 dry ohms, and the resistance of Rcs is 9.1 ohms, all from Taiwan ROYALOHM thick and thick manufacturers;
  • the bare crystal rectifier diode product model is MB6S, which was purchased from Shenzhen Startech Electronic Technology Co., Ltd.;
  • the bare crystal MOSFET product model is 2N60, which is purchased from China Resources Huajing Microelectronics Co., Ltd.;
  • the bare crystal linear drive IC chip is a self-owned product, and detailed parameters thereof have been disclosed in the embodiment of the present invention.
  • color rendering index is 84.4
  • luminous flux is 616.1LM
  • luminous efficiency is 102.39LM/W
  • voltage is 220.01V
  • current is 0.03029A
  • power is 6.017W
  • power factor is 0.9029.
  • the embodiment of the present invention has completed testing and testing under various power conditions, and specific parameters and test results are no longer listed.

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
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  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
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Abstract

一种全裸晶封装可调光光电一体发光二极管（LED）照明组件，其特征是：在导热绝缘材料基板上交流电母线两端各连接两个整流二极管，形成直流电正极连接串联LED正极，同时连接一个电阻R1再连接线性驱动IC芯片的电源（VCC）焊盘；IC芯片的栅（GATE）焊盘连接金属氧化物半导体场效应晶体管（MOSFET）的栅极(G)焊盘；IC芯片的检测（Sense）焊盘连接MOSFET的源极(S)焊盘，同时连接电阻Rcs再连接地线；IC芯片的接地（GND）焊盘连接地线；MOSFET的漏极连接LED负极。其中IC芯片和MOSFET的位置距离要足够大能及时散热和IC芯片表面要有导热绝缘非透明覆盖层以避免IC芯片功能受影响。一种全裸晶封装可调光光电一体LED照明组件制造工艺，其特征是有五步基本流程，包括基板制造、固晶、焊线、围坝和点胶，有两步辅助流程为测试和分板及测试。

Description

全裸晶封装可调光光电一体LED照明组件及制造工艺 技术领域
本发明涉及LED照明驱动电源技术和半导体封装技术领域。
背景技术
LED照明是照明领域的革命性改变，其产品和技术发展目标和趋势是进一步提高性能、保证使用寿命和降低成本，作为半导体照明，光电一体化封装是重要的技术发展方向和途径。
LED封装技术大都是在分立器件封装技术基础上发展与演变而来的，但有很大的特殊性。LED封装主要是做到完成输入输出电、保护管芯正常工作、输出可见光的功能，有电参数同时又有光参数的设计及技术要求，无法简单地将传统分立器件的封装用于LED。LED脚式封装采用引线架作各种封装外型的引脚，是最先研发成功投放市场的封装结构，在2002年，表面贴装封装的LED(SMDLED)逐渐被市场所接受，从引脚式封装转向SMD符合整个电子行业发展大趋势。
最新出现的COB封装可将多颗芯片直接封装在合适基板上并通过基板直接散热，在性能上COB光源模块可以有效地避免分立光源器件组合存在的点光、眩光等弊端，还可以通过加入适当红色芯片组合，在不降低光源效率和寿命的前提下，有效地提高光源的显色性(已做到90以上)。在应用上，COB光源模块可以使照明灯具厂的组装生产更简单和方便。在生产上，现有的工艺技术和设备可以支持高良品率COB光源模块的大规模制造。
目前COB封装技术主要还是用于LED作为单一器件种类的光源封装，因为驱动电源部分比较复杂，涉及多种电子元器件种类，目前 驱动电源所涉及各种电子元器件都是单独封装后才能被使用。
LED照明驱动电源主要有四大类型，阻容降压、恒流二极管、线性电源和开关电源。驱动电源是将各种情况下电源供应转换为特定电压电流以驱动LED发光的转换器。一般电源输入有多种情况，对于LED照明而言输出一定为可以随LED正向压降值变化而改变电压的恒定电流源。
最简单的一类驱动电源是阻容降压电路，但其电流随电压波动大，不耐冲击，会严重影响LED寿命，功率因素低，只能用于一些要求不高的小功率LED照明情况，且效果较差。
基于恒流二极管的驱动电源是第二类型，恒流二极管原先主要用于仪器仪表，后来因其恒流特性被用于一些低功率LED灯的情形。作为LED照明的恒流驱动具有电路结构简单，成本低廉的优点，但有认为目前恒流二极管的动态范围只有30V，低于电网有时可能高达上百伏的正常电压波动区间，实际上无法保持恒流，在大动态高电压情况下自身功耗大，系统效率低，同时温升会导致LED光衰加大，因此并不适合用于通用照明，同时又由于恒流二极管生产工艺的局限带来性能的一致性不好及合适使用的产品比例较低，容易在大规模使用时出现产品质量无法稳定的严重问题。
基于IC芯片的LED照明驱动电源目前为大量使用的主流方案，具有较好的恒流精度和各种功能，主要分为开关电源和线性电源两大类型。
开关电源类型又有隔离型和非隔离型两种，隔离型适用于低电压大电流的恒定电流输出，外围元器件较多，体积较大，主要用于外置电源；非隔离型适用于高电压小电流输出，体积相对较小，效率高，主要用于内置电源。总体而言，开关电源复杂，涉及元器件数量多，包括电解电容，所以目前不适合进行全裸晶一体化封装。
线性IC芯片LED驱动电源方案具有电路相对简单、外围元器件很少、体积小、成本低、易于集成化的优势。目前已经有单独封装的LED和线性电源中各自单独封装的IC芯片和元器件全部装在同一块 板上，称为DOB(Driver on Board)，也就是常说的光电引擎，最新的进展是已经使用了COB封装技术的封装LED和各类单独封装元器件所组成的电源在同一个板上，如最近推出的OSRAM产品PrevaLED Core AC PRO light engines。由于DOB或者光电引擎所使用的驱动电源仍然是各自单独封装的IC芯片和相关元器件，而线性驱动电源方案最大的缺陷是散热问题，散热尤其会高度集中于线性电源IC芯片和MOSFET功率管。传统的IC芯片和元器件封装使用塑料外壳，导热较差，线性驱动电源的散热问题会大大降低整个系统的稳定性和可靠性。如果将驱动电源的IC芯片和各元器件以裸晶形式直接封装在导热性能良好且绝缘的基板上则可以解决这一问题，同时降低相关成本。
以类似COB封装技术对裸晶IC芯片和多种类型和尺寸大小的裸晶元器件一体化封装在一个导热绝缘基板上，是新的尝试，尤其做到大规模自动化生产具有相当的技术和工艺难度，并非做到实验室样品就意味着解决了问题，能做到大规模高良率生产才真正有实质意义。
由于恒流二极管的电路非常简单，也容易进行裸晶封装，但恒流二极管既是简单器件又是简单驱动电路，因此，恒流二极管裸晶封装成功对于驱动IC芯片的裸晶封装借鉴价值不大，因为驱动IC芯片不仅是驱动IC芯片本身要复杂，同时基于驱动IC芯片的驱动电源方案也要复杂的多。
目前用于IC芯片和元器件的封装技术和类似COB封装技术相比是非常不同的。
IC芯片和元器件的封装技术，即半导体封装技术，发展由来已久，因为封装对于IC芯片和元器件来说是必须的，也是至关重要的，IC芯片和元器件必须与外界隔离，以防止空气中的杂质对芯片电路或元器件材料的腐蚀而造成电气性能下降，同时封装后的芯片和元器件也便于安装和运输。现有封装技术是将IC芯片或元器件用绝缘塑料或陶瓷材料单独打包引线，封装技术的好坏直接影响到芯片自身性能和与之连接的印制电路板PCB的设计和制造。
目前主要常见的半导体封装有两大类：双列直插封装DIP(Dual In-line Package)和贴片封装SMT(Surface Mounting Technology)。半导体器件有许多具体封装形式，按封装的外形、尺寸、结构分类可分为引脚插入型、表面贴装型和高级封装三类。从DIP、SOP、QFP、PGA、BGA到CSP再到SIP，技术指标一代比一代先进。总体说来，半导体封装经历了三次重大革新：第一次是在20世纪80年代从引脚插入式封装到表面贴片封装，极大地提高了印刷电路板上的组装密度；第二次是在20世纪90年代球型矩阵封装的出现，满足了市场对高引脚的需求，改善了半导体器件的性能；而现在晶片级封装、系统性封装等是现在发生的第三次革新。
我们要将所有裸晶发光二极管(LED)和线性驱动电源所有裸晶器件包括IC芯片一体化封装在导热绝缘基板上，属于系统级封装。这需要对已有LED照明线性驱动电源方案进行优化，包括对驱动IC芯片进行相应改进，解决各个环节上的技术和工艺难题，才能实现混合多种晶元类型的全裸晶系统性封装。这一系统性封装的实现能有效解决现有LED照明线性驱动电源的散热问题，极大地提高系统的性能和质量的一致性，并能够减少已有产品中很多中间生产环节降低成本，并能进行大规模自动化生产光电一体化LED照明组件。
发明内容
本发明所采用的技术方案是：用实验确定适合全裸晶封装的LED照明线性驱动电源优化方案并确定特定电路，根据特定电路设计全裸晶封装LED照明组件的布线图及选择合适导热绝缘材料基板并将布线图以导电材料印刷至基板上成为印刷电路，通过实验验证全裸晶封装各个工艺流程环节并用这些工艺流程将相应裸晶LED、裸晶IC芯片、裸晶整流二极管、裸晶MOSFET及电阻全部一体化封装到上述基板上的印刷电路中并做最后测试验证。
本发明所述特定电路有多种表现形态，包括根据适合全裸晶封装 的LED照明线性驱动电源优化方案所得到的电路原理图、根据上述原理图所设计布线图及制成印刷电路和其后全裸晶封装完成后组件的实际完整电路，都为本发明特定电路。
本发明一种全裸晶封装可调光光电一体LED照明组件是：
在导热绝缘材料基板上的印刷电路中，交流电母线两端各连接两个裸晶整流二极管的负极和正极，经过四个裸晶整流二极管形成的直流电正极连接串联裸晶发光二极管(LED)的正极，同时连接一个电阻R1再连接裸晶IC芯片的VCC焊盘；裸晶IC芯片的GATE焊盘连接外置裸晶MOSFET的G焊盘(栅极)；裸晶IC芯片的Sense焊盘连接外置裸晶MOSFET的S焊盘(源极)，同时连接电阻Rcs再连接地线；裸晶IC芯片的GND焊盘连接地线；裸晶MOSFET的D焊盘(漏极)连接裸晶发光二极管LED负极。
上述裸晶IC芯片是线性恒流LED驱动IC芯片，其基本必要部分包括VCC端有内部钳位电路(Clamp)和UVLO(Under Voltage Lockout)；还包括接地线端(GND)；还包括内部控制(Control)和驱动(Driver)部分及驱动极GATE端和电流采样/设置SENSE端。
上述电阻R1值根据裸晶IC芯片的参数设定。串联裸晶LED的峰值恒流电流为Ipeak，可以由Ipeak＝Vref/Rcs确定，而裸晶IC芯片的Vref对于特定裸晶IC芯片已经固定，因此通过设定Rcs值再通过裸晶IC芯片控制LED导通时的峰值恒流电流Ipeak。
在上述导热绝缘材料基板可以是任何符合要求的材料，目前陶瓷基板是很好选择之一。
在上述基板的印刷电路中裸晶IC芯片和裸晶MOSFET需有足够的物理距离以避免MOSFET的散热影响裸晶IC芯片的正常工作。
在上述基板的印刷电路中裸晶IC芯片的表面需要有导热绝缘不透明材料覆盖，以免光线对裸晶IC芯片产生影响导致不正常性能，目前上述导热绝缘不透明材料可以使用导热不透明硅胶。
实验验证上述适合全裸晶封装LED照明线性驱动电源优化方案具有可控硅调光的功能，实验也验证上述全裸晶封装线性光电一体化照明组件具有可控硅调光功能。
本发明中一种全裸晶封装可调光光电一体LED照明组件的制造工艺流程是：
第一步，基板制造工艺流程：
按所需规格制造导热绝缘基板白板，在使用陶瓷基板的情况下，则烧制陶瓷白板；
用实验确定适合全裸晶封装的LED照明线性驱动电源优化方案并确定特定电路，再根据特定电路确定布线图，其中裸晶MOSFET和裸晶IC芯片的设定位置需要分开足够距离，将布线图以公知技术将导电材料印刷至上述基板白板上，再行烘烤固化成为印刷电路，目前用于印刷电路的导电材料是含银材料，也可以是其它类；在上述印刷电路中相关指定位置，用粘稠导热导电材料将设定阻值的电阻R1和Rcs固定在指定位置，现用上述粘稠导热导电材料为银胶，并进行烘烤固化；
第二步，固晶工艺流程：
在上述基板印刷电路的相关位置，将设定数量的裸晶发光二极管(LED)用粘稠导热绝缘材料固定在指定位置，现用上述粘稠导热绝缘材料为导热硅胶，并进行烘烤固化，然后，在上述基板印刷电路的相关位置，用粘稠导热导电材料将四个裸晶整流二极管、一个裸晶IC芯片、一个裸晶MOSFET固定在指定位置，并进行烘烤固化，现用上述粘稠导热导电材料为银胶；
第三步，焊线工艺流程：
在上述已经完成对裸晶LED和其它裸晶器件固晶的基板上，在各器件的指定位置上，焊接导电导线，以连接基板上的印刷电路线路，完成基板上的全部电路连接，上述导电导线可以为各类导电材料，现使用金线；
上述第二步和第三步工艺流程在裸晶LED使用倒装封装形式时， 则根据倒装工艺流程的要求进行，涉及裸晶IC芯片和其它裸晶器件的工艺流程则基本保持不变。
第四步，测试工艺流程：
在已经完成上述工艺流程的基板上，接通对应电压的电源线，确认已完成工艺流程达到要求，同时，可以通过测试获取相关光学和电学参数，验证产品是否达到所设计的要求；
第五步，围坝工艺流程：
在完成上述所有工艺流程并测试合格后，在上述基板上使用导热绝缘不透明材料注在布线图所设定的位置上制成设定高度和宽度的圈层(坝)，并进行烘烤固化，现用所述导热绝缘不透明材料为导热不透明硅胶；
第六步，点胶工艺流程：
按设计要求配制含公知相关比例荧光粉的导热绝缘透明材料，在上述已完成围坝的基板上，使用所述含公知相关比例荧光粉的导热绝缘透明材料注入在上述圈层形成的空间内至设定高度，并进行烘烤固化，现用所述含公知相关比例荧光粉的导热绝缘透明材料为导热透明硅胶；
第七步，分板和测试工艺流程：
在由多个基板连接成一体同时完成上述流程的情况下，这时需要将上述多个基板进行分板，即每个基板不再和其它基板相连接。对上述已经完成全部工艺流程的基板，接通对应电压的电源线，测试获取相关光学和电学参数，确认已完成工艺流程达到相应要求，并根据相关参数进行分检分类。
上述全部七步工艺流程中，第一至第三和第五至第六共五步工艺流程为基本工艺流程，是完成全裸晶封装的必要工艺流程，而第四和第七步工艺流程则为辅助流程。
本发明的有益效果是能有效解决现有LED照明线性驱动电源存在的散热问题，极大地提高这类照明系统的性能和质量的一致性，减少已有LED照明产品涉及的众多生产环节，并能进行大规模自动化 生产光电一体化组件。
附图说明
图1为本发明实施案例线性电源方案典型应用电路图
图2为本发明实施案例裸晶线性驱动IC芯片RC001B表面结构图
图3为本发明实施案例全裸晶封装特定电路之电路原理图
图4为本发明实施案例所需裸晶IC芯片的基本内部结构图
图5为本发明实施案例全裸晶封装特定电路的波形图
图6为本发明实施案例全裸晶封装特定电路布线和印刷电路图
图7为本发明实施案例全裸晶封装组件结构和线路绑定图
图8为本发明实施案例全裸晶封装组件尺寸比例图
具体实施方式
下面参照附图，对本发明所述全裸晶封装可调光光电一体LED照明组件及制造工艺的具体实施方式进行详细描述。
我们选择了线性驱动IC芯片RC001B(中国国家知识产权局集成电路布图登记号BS.14500659X，布图设计申请日2014年6月27日，公告日期：2014年12月17日，公告号9835，布图设计创作完成日：2013年5月21日)，图1所示为RC001B的典型应用电路图，图2所示为RC001B的裸晶表面结构图和焊盘标识，裸晶的相关资料单颗晶元大小厚度、电极大小成分等如下：
Figure PCTCN2016088052-appb-000001
Figure PCTCN2016088052-appb-000002
RC001B的电学特性如下：
除专门标注外，标准测试条件为VCC＝10V，TA＝25℃
Figure PCTCN2016088052-appb-000003
通过实验确定了基于RC001B并适合全裸晶封装的LED照明线性驱动电源优化方案，确定了特定电路，上述特定电路的电路原理如图3所示，上述特定电路只保留了整流桥、线性IC芯片、MOSFET和两颗电阻R1和Rcs；
上述特定电路中并未使用线性恒流LED驱动IC芯片RC001B的 全部功能，图4显示线性恒流LED驱动IC芯片中和本发明中涉及LED照明线性驱动优化方案及特定电路相关的必要部分，包括VCC端有内部钳位电路(Clamp)和UVLO(Under Voltage Lockout)；还包括接地线端(GND)；还包括内部控制(Contro1)和驱动(Driver)部分及驱动极GATE端和电流采样/设置SENSE端。上述内部控制和驱动部分涉及具体机制，对本发明来说线性恒流LED驱动IC芯片具有上述相应功能实现上述特定电路是基本和必须的，而实现相应功能的任何具体机制都是等效的。
在上述特定电路中，当交流电母线开启，交流电通过整流桥成为直流电导向串联的LED，同时线性驱动IC芯片通过连接直流电的启动电阻(R1)充电，达到设定V时由内部钳位电路(Clamp)使VCC电压稳定在一定数值，并在降到UVLO(Under Voltage Lockout)阀值电压时自动关闭线性驱动IC芯片；
如图5所示，上述特定电路中整流桥后的峰值电压必须大于所设置的串联裸晶LED电压VLED，桥后电压有波峰和波谷。该裸晶IC芯片根据正弦波变化上升达到VLED时自动导通串联的裸晶LED，当电压继续上升而VLED保持不变，多余压降由MOSFET承担，在电压下降时VLED保持不变，由MOSFET承担的多余压降逐步减少，当低于VLEAD时，输出电流则为零。只有当电压达到VLED时，才有输出电流，这时串联的LED才会亮。在一个电压正弦波周期中导通时间和波长时间比为导通比，设定VLED数值非常重要，数值过高则导通比低，即发光时间短，LED利用率低；数值过低也降低效率，并在升压时造成MOSFET的更多功耗，因此VLED设定根据实际需求进行调整优化。
在上述特定电路中，线性驱动IC芯片通过Rcs电阻对LED电流取样并和IC内部参考电压Vref比较产生控制信号，达到LED恒流输出的目标。通过串联LED的峰值电流为Ipeak＝Vref/Rcs，而线性驱动IC芯片的Vref在IC设计和生产时已经固定，RC001B的Vref为400mV，由此设定Rcs就能通过线性驱动IC芯片控制LED导通时的 峰值电流Ipeak。
上述特定电路中流过串联LED的电流为平均电流ILED＝Ipeak*D(导通比)，在D＝0.5左右时，可以得到0.9以上的功率因子(PF)，但这种情况下输出电流会随输入电压增大而增大，同时输出电流的纹波也比较大。
实验发现上述特定电路具有可控硅调光的功能，经过实验验证，主要是因为在这一类电路中取消了典型应用(图1)中的滤波电容C1，当在该特定电路中加回上述滤波电容，则电路不再具有可控硅调光的功能。
根据上述特定电路，可以设计用于印刷到基板的布线图，图6为基于上述特定电路的典型布线图。
实验发现裸晶IC芯片和裸晶MOSFET在基板上位置必须保持足够的物理距离，在两者有焊线连接的情况下，裸晶MOSFET产生的热量严重影响到裸晶IC芯片的正常性能，导致系统异常，当两者在陶瓷基板上位置分开足够距离且没有焊线相连接，则裸晶IC芯片性能表现正常，由此可见全裸晶封装对各器件物理和电气性能的影响不同于各器件在单独封装的情况。
因此，预计带有内置MOSFET的线性驱动IC芯片在进行全裸晶封装情况下的物理和电气性能也会区别于其单独封装时的表现，虽然他们在电路原理上和不带内置MOSFET线性驱动IC芯片一样，其典型应用电路的核心部分都类似于图1.。目前带有内置MOSFET的线性驱动IC芯片有BP5112(上海晶丰明源半导体有限公司)、MT7601(美芯晟科技(北京)有限公司)、SM2082(深圳市明微电子股份有限公司)等，这类内置MOSFET线性驱动IC芯片在用于较高功率LED照明时散热也带来比较大的问题。
实验发现裸晶IC芯片的表面需要有导热绝缘不透明材料覆盖，否则在有些情况下光线会对裸晶IC芯片产生影响导致性能不正常，实验证明使用导热不透明硅胶覆盖解决了上述问题。
根据上述布线图，将导电材料印刷到导热绝缘材料基板上，成为对应的印刷电路，然后在上述印刷电路中，将裸晶LED和所有器件的裸晶包括IC芯片全部封装到上述印刷电路的相关位置，具体位置如图7所显示，根据需要所设定数量的裸晶LED(标注为LED字母上方的小实心长方块及分布在基板表面上同样大小的小实心长方块)，四个裸晶整流二极管(标注为MB6S字母周边四个实心小方块)、一个裸晶线性驱动IC芯片(标注为RC001B字母上方的一个实心小方块)、一个裸晶MOSFET(标注为MOS字母上方的实心方块)，R1(标注为R1字母左边的实心长方块)和Rcs(标注为Rcs字母右边的实心长方块)。在全裸晶封装完成后，由此交流电母线两端各连接两个裸晶整流二极管的负极和正极，经过四个裸晶整流二极管形成的直流电正极连接串联裸晶发光二极管(LED)的正极，同时连接一个电阻R1再连接裸晶线性驱动IC芯片的VCC焊盘；裸晶IC的GATE焊盘连接裸晶MOSFET的G焊盘(栅极)；裸晶线性驱动IC芯片的Sense焊盘连接裸晶MOSFET的S焊盘(源极)，同时连接电阻Rcs再连接地线；裸晶线性驱动IC芯片的GND焊盘连接地线；裸晶MOSFET的D焊盘(漏极)连接裸晶LED负极；最终形成完整电路。
经过反复实验，确定本发明中的全裸晶封装可调光光电一体LED照明组件的制造工艺流程是：
第一步，基板制造工艺流程：
按所需规格制造导热绝缘基板白板，本发明实施案例中使用陶瓷基板，则烧制规格为单位面积28mmX28mm厚度为1mm的陶瓷白板片，每块独立陶瓷片含有四片单位陶瓷片，相互之间留有切割线，以便后续分板，；
根据实验确定适合全裸晶封装的LED照明线性驱动电源优化方案，所确定特定电路的电路原理图如图3，再根据上述特定电路电路原理图确定布线图，如图6，将上述布线图以公知技术将导电材料印刷至上述基板白板上，再行烘烤固化成为印刷电路，也如图6所示，虽然布线图和印刷电路图形一模一样，但布线图是设计图，而印刷电 路已经是印刷在陶瓷基板上的实际导电电路，本发明案例用于印刷电路的导电材料为含银材料；在图7所示中相关指定位置，用银胶将合适电阻值的R1(标注为R1左边的实心长方块)和Rcs(标注为Rcs右边的实心长方块)固定在指定位置，进行烘烤固化；
第二步，固晶工艺流程：
在如图7所示相关位置，将设定数量的裸晶发光二极管(LED)用导热绝缘材料固定在指定位置，并进行烘烤固化，本发明案例使用上述导热绝缘材料是导热硅胶，然后，在如图7所示相关位置，用导热导电材料将四个裸晶整流二极管(标注为MB6S字母周边四个实心小方块)、一个裸晶线性驱动IC芯片(标注为RC001B字母上方的一个实心小方块)、一个裸晶MOSFET(标注为MOS字母上方的实心方块)固定在指定位置，并进行烘烤固化，本发明案例中上述导热导电材料为银胶；
第三步，焊线工艺流程：
在上述已经完成对裸晶LED、裸晶线性驱动IC芯片及其它裸晶器件固晶的基板上，如图7所示，在各器件的指定位置上，焊接导电导线，以连接基板上的印刷电路线路，完成基板上的全部电路接通，本发明案例中上述导电导线使用金线；
第四步，测试工艺流程：
在已经完成上述工艺流程的基板上，接通220V电压的电源线，确认已完成工艺流程达到要求，同时，通过测试获取相关光学和电学参数，验证产品是否达到所设计的要求；
第五步，围坝工艺流程：
在完成上述所有工艺流程并测试合格后，如图7所示，在上述基板上使用导热绝缘不透明材料注在设定位置上，制成直径为24mm的外圈层和直径为7mm的内圈层，圈层高度大约为1mm，然后进行烘烤固化；本发明案例中所述导热绝缘不透明材料为导热不透明硅胶；另外设定内圈层同时覆盖住裸晶线性驱动IC芯片表面也是解决裸晶IC芯片表面需要覆盖的方法之一；
第六步，点胶工艺流程：
按设计要求和公知流程配制含相关比例荧光粉的导热绝缘透明材料，在上述已完成围坝的基板上，使用所述含荧光粉的导热绝缘透明材料注入在内外圈层形成的空间内至圈层高度，如图8所示，并进行烘烤固化，本发明实施案例中所述含荧光粉的导热绝缘透明材料为含荧光粉的导热透明硅胶；
第七步，分板和测试工艺流程：
本发明案例中由四个单位基板连接成一片同时完成上述流程，再将上述四个单位基板进行分板，即每个单位基板不再和其它单位基板相连接。对上述已经完成全部工艺流程的基板，接通对应220V电压的电源线，测试获取相关光学和电学参数，确认已完成全部工艺流程达到相应要求，并根据相关参数进行分检分类。
上述第一至第三和第五至第六共五步工艺流程为基本工艺流程，是完成全裸晶封装的必要工艺流程，而第四和第七步工艺流程则为辅助流程，主要是保证产品质量和最终产品使用，不是全裸晶封装必须具有的工艺流程。
在本发明实施案例中，有功率为6W的全裸晶封装可调光光电一体LED照明组件作为典型实施案例，具体器件来源和参数设定如下：
27颗裸晶LED：来自三安光电股份有限公司产品型号为S-30BBHUP-B的裸晶高压LED，；
R1阻值为820干欧姆，Rcs阻值为9.1欧姆，均来自台湾ROYALOHM厚生厂家；
裸晶整流二极管产品型号为MB6S，购自深圳市斯达特来电子科技有限公司；
裸晶MOSFET产品型号为2N60，购自华润华晶微电子有限公司；
裸晶线性驱动IC芯片为自有产品，其详细参数已在本发明实施案例中披露。
上述典型实施案例6W组件的产品测试结果：显色指数为84.4，光通量为616.1LM，光效为102.39LM/W，电压为220.01V，电流为0.03029A，功率为6.017W，功率因素为0.9029。
本发明实施案例已完成对在多种功率情况下的试验和测试，具体参数和测试结果不再——列举。
上文参照附图描述了本发明的具体实施方式和典型实施案例，但本领域中的普通技术人员能够理解，在不偏离本发明的精神和范围的情况下，还可以对具体实施方式作各种变更和替换，这些变更和替换都落在本发明权利要求书所限定的范围内。

Claims (10)

  1. 一种全裸晶封装可调光光电一体LED照明组件，其特征是，用特定电路和半导体封装技术将裸晶LED和裸晶驱动电源器件作为一个整体封装在导热绝缘材料基板上；
    上述特定电路是在导热绝缘材料基板上交流电母线两端各连接两个裸晶整流二极管的负极和正极，经过四个裸晶整流二极管形成的直流电正极连接串联裸晶发光二极管的正极，同时连接一个电阻R1再连接裸晶IC芯片的VCC焊盘；裸晶IC芯片的GATE焊盘连接裸晶MOSFET的G焊盘；裸晶IC芯片的Sense焊盘连接裸晶MOSFET的S焊盘，同时连接电阻Rcs再连接地线；裸晶IC芯片的GND焊盘连接地线；裸晶MOSFET的D焊盘，连接裸晶发光二极管LED负极；
    上述特定电路中裸晶IC芯片和裸晶MOSFET具有足够的物理距离以避免MOSFET的散热影响裸晶IC芯片的正常工作，同时裸晶IC芯片表面需要有导热绝缘不透明材料覆盖以免影响其正常工作。
  2. 根据权利要求1所述的全裸晶封装可调光光电一体LED照明组件，其特征是导热绝缘材料基板为陶瓷基板。
  3. 根据权利要求1所述的全裸晶封装可调光光电一体LED照明组件，其特征是裸晶IC芯片为线性驱动IC芯片，基本必要部分包括VCC端有内部钳位电路(Clamp)和UVLO(Under Voltage Lockout)；还包括接地线端(GND)；还包括内部控制(Control)和驱动(Driver)部分及驱动极GATE端和电流采样/设置SENSE端。
  4. 根据权利要求1所述的全裸晶封装可调光光电一体LED照明组件，其特征是裸晶LED为裸晶高压LED。
  5. 根据权利要求1所述的全裸晶封装可调光光电一体LED照明组件，其特征是覆盖裸晶IC芯片表面的导热绝缘不透 明材料为导热不透明硅胶。
  6. 一种全裸晶封装可调光光电一体LED照明组件制造工艺，其特征是：
    在基板制造工艺流程中，包括按所需规格制作导热绝缘材料基板白板，按特定电路原理图设计电路布线图，按上述电路布线图以公知技术将导电材料印刷到导热绝缘材料基板白板上，再行烘烤固化成为印刷电路，对上述印刷电路相关部分进行公知绝缘材料覆盖，再行烘烤固化；在上述基板上印刷电路图相关位置，用粘稠导热导电材料将设定阻值的电阻R1和Rcs固定在指定位置，并进行烘烤固化；
    在固晶工艺流程中，在上述基板上印刷电路图相关位置，用粘稠导热绝缘材料将设定数量的裸晶发光二极管(LED)固定在指定位置，并进行烘烤固化，在上述基板上印刷电路图相关位置，用粘稠导热导电材料将四个裸晶整流二极管、一个裸晶IC芯片、一个裸晶MOSFET固定在指定位置，并进行烘烤固化；
    在焊线工艺流程中，在上述已经完成对裸晶LED和其它裸晶器件固晶的基板上，在各器件的指定位置上，焊接金属导线，以链接基板上的线路，完成基板上的全部电路连接；
    在测试工艺流程中，在上述已经完成对裸晶LED和其它裸晶器件固晶和焊线基板上，接通对应电压的电源线，以确认已完成工艺流程达到要求，同时通过测试获取相关光学和电学参数；
    在围坝工艺流程中，上述已完成固晶和焊线基板测试合格后，在上述基板上，使用粘稠导热绝缘不透明材料注在基板上设定位置形成设定高度和宽度的圈层(坝)，并进行烘烤固化；
    在点胶工艺流程中，按设计要求配制含公知相关比例荧光粉的粘稠导热绝缘材料，在上述已完成围坝的基板上，使用上述含公知相关比例荧光粉的粘稠导热绝缘材料注在围坝形成的空间内至设定高度，并进行烘烤固化；
    在分板和测试工艺流程中，由多个基板连接成一体同时完成上述流程的情况下将上述多个基板进行分板，即每个基板不再和其它基板相连接，对上述已经完成全部工艺流程的基板接通对应电压的电源线，测试获取相关光学和电学参数，确认已完成工艺流程达到要求，并根据参数进行分检分类。
  7. 根据权利要求6所述的全裸晶封装可调光光电一体LED照明组件制造工艺，其特征是在基板制造工艺流程中以导电材料印刷到导热绝缘材料基板白板上为以含银材料印刷到导热绝缘材料基板白板上。
  8. 根据权利要求6所述的全裸晶封装可调光光电一体LED照明组件制造工艺，其特征是在基板制造工艺流程和固晶工艺流程中所述粘稠导热导电材料为银胶。
  9. 根据权利要求6所述的全裸晶封装可调光光电一体LED照明组件制造工艺，其特征是在固晶工艺流程和点胶工艺流程中所述粘稠导热绝缘材料为导热硅胶。
  10. 根据权利要求6所述的全裸晶封装可调光光电一体LED照明组件制造工艺，其特征是在围坝工艺流程中粘稠导热绝缘不透明材料为导热不透明硅胶。
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