WO2017004981A1 - 非可见光平板检测器及其制备方法、影像设备 - Google Patents

非可见光平板检测器及其制备方法、影像设备 Download PDF

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WO2017004981A1
WO2017004981A1 PCT/CN2016/072089 CN2016072089W WO2017004981A1 WO 2017004981 A1 WO2017004981 A1 WO 2017004981A1 CN 2016072089 W CN2016072089 W CN 2016072089W WO 2017004981 A1 WO2017004981 A1 WO 2017004981A1
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Prior art keywords
electrode
photoelectric conversion
visible light
panel detector
semiconductor photoelectric
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PCT/CN2016/072089
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English (en)
French (fr)
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江峰
刘兴东
李重君
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京东方科技集团股份有限公司
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Priority to US15/107,209 priority Critical patent/US9705024B2/en
Publication of WO2017004981A1 publication Critical patent/WO2017004981A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/117—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14669—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers

Definitions

  • the invention belongs to the technical field of detection, and particularly relates to a non-visible flat panel detector, a preparation method thereof and an imaging device.
  • FIG. 1 shows a schematic diagram of a conventional X-ray flat panel detector.
  • the X-ray flat panel detector mainly includes an X-ray conversion layer 11 and a photodetecting device 12 (usually a PIN photodiode).
  • Electronic signal detecting device 13 usually a thin film transistor.
  • the thin film transistor Under the action of the driving circuit, the thin film transistor is turned on, so that the electrical signal converted by the PIN type photodiode 12 is transmitted to the data processing circuit via the thin film transistor, and the data processing circuit further amplifies the analog signal and performs analog/digital Processing such as conversion, and finally obtaining image information.
  • Fig. 2 shows a schematic view of an X-ray flat panel detector disclosed in U.S. Patent Application Publication No. US 20120038013 A1, which is a vertically-disposed X-ray flat panel detector. As shown in FIG.
  • the first insulating layer 2 the thin film transistor 1, wherein the semiconductor photoelectric conversion layer 4 is for converting an optical signal into an electrical signal, and the second electrode passes through the second insulating layer 9
  • the via hole is in contact with the semiconductor photoelectric conversion layer 4 for stabilizing the electrical signal converted by the semiconductor photoelectric conversion layer 4, and the first electrode 3 is connected to the source of the thin film transistor 1 for sensing the electrical signal, and is in the thin film transistor 1
  • the electrical signal is transmitted to the data processing circuit.
  • the X-ray flat panel detector disclosed in the U.S. Patent Application can reduce the problem of signal interference due to the vertically disposed structure, it is required to be formed in the second insulating layer 9.
  • the via hole enables the second electrode provided for stabilizing the electrical signal converted by the semiconductor photoelectric conversion layer 4 to be in contact with the semiconductor photoelectric conversion layer 4, and thus the process is complicated; and the first electrode 3 and the second electrode are disposed in the same layer, Therefore, neither of them is a continuous plate-shaped electrode, so the electrical signal induced by the first electrode 3 is not strong, so it is not very good after being transmitted to the thin film transistor 1, thereby affecting the accuracy of detection.
  • One of the objects of the present invention is to provide a non-visible flat panel detector with a small volume and a simple preparation process, a preparation method thereof, and an imaging apparatus for the above problems existing in the non-visible flat panel detector.
  • a technical solution adopted for achieving the above object is a non-visible light panel detector comprising a plurality of detecting units and a non-visible light conversion layer disposed above the detecting unit for converting non-visible light into visible light, each of which
  • the detecting unit includes a thin film transistor disposed on the substrate, and a first insulating layer, a first electrode, and a semiconductor photoelectrically disposed at least partially overlapping the projection of the thin film transistor on the substrate and the projection of the thin film transistor on the substrate Conversion module, second electrode;
  • the semiconductor photoelectric conversion module is configured to convert visible light into an electrical signal
  • the second electrode is in direct contact with the semiconductor photoelectric conversion module for stabilizing an electrical signal converted by the semiconductor photoelectric conversion module
  • the first electrode is electrically connected to a source of the thin film transistor through a via hole penetrating the first insulating layer, and is configured to transmit an electrical signal stabilized by the second electrode to the thin film transistor, and when the thin film transistor is turned on, The electrical signal is transmitted to a data processing circuit.
  • the first electrode is a plate electrode.
  • the semiconductor photoelectric conversion module includes at least a semiconductor photoelectric conversion layer.
  • the semiconductor photoelectric conversion module further includes a hole transport layer and an electron transport layer;
  • the hole transport layer is disposed between the second electrode and the semiconductor photoelectric conversion layer;
  • the electron transport layer is disposed between the semiconductor photoelectric conversion layer and the first electrode.
  • the non-visible flat panel detector further includes a third electrode
  • the third electrode is disposed between the first electrode and the semiconductor photoelectric conversion module, and is separated from the first electrode by a second insulating layer; the third electrode is configured to receive the second electrode The electrode stabilizes the electrical signal and transmits the electrical signal to the first electrode.
  • the material of the third electrode is a non-transparent conductive material.
  • the first electrode and the third electrode are both plate electrodes.
  • the semiconductor photoelectric conversion module includes at least a semiconductor photoelectric conversion layer.
  • the semiconductor photoelectric conversion module further includes a hole transport layer and an electron transport layer;
  • the hole transport layer is disposed between the second electrode and the semiconductor photoelectric conversion layer;
  • the electron transport layer is disposed between the semiconductor photoelectric conversion layer and the third electrode.
  • the non-visible flat panel detector further includes a black matrix disposed at a peripheral region of each detecting unit; the black matrix is located between a layer where the second electrode is located and the non-visible light converting layer.
  • the non-visible flat panel detector further includes a black matrix disposed at a peripheral region of each detecting unit; the black matrix is located between a layer where the second electrode is located and the semiconductor photoelectric conversion module.
  • the first electrode, the semiconductor photoelectric conversion module, and the second electrode Projection on the substrate completely covers the projection of the thin film transistor on the substrate.
  • the non-visible light is any one of X-rays, infrared rays, and ultraviolet rays.
  • the material of the second electrode is a transparent conductive material.
  • Another technical solution for achieving the above object is a method for preparing a non-visible flat panel detector, wherein the non-visible flat panel detector is any one of the above non-visible flat panel detectors, and the preparation method comprises:
  • the preparation method further includes forming a second insulating layer and a third electrode between the first electrode and a layer in which the semiconductor photoelectric conversion module is located.
  • Still another technical solution employed to achieve the above object is an image device comprising any of the above non-visible flat panel detectors.
  • the present invention has the following advantageous effects.
  • the projection of the first insulating layer, the first electrode, the semiconductor photoelectric conversion module, the second electrode, and the thin film transistor on the substrate in the non-visible flat panel detector of the present invention at least partially overlaps, that is, the non-visible flat panel detection of the present invention
  • the components of the device are vertically distributed, so that the volume is small, the design of high resolution is easy to achieve, the performance is good, and the second electrode is in direct contact with the semiconductor photoelectric conversion module, so that it is not required to be in contact with the prior art.
  • the through hole is therefore simple in the preparation process and the production efficiency is improved.
  • Figure 1 is a schematic view of a conventional X-ray flat panel detector
  • Figure 2 is a schematic illustration of an X-ray flat panel detector disclosed in U.S. Patent Application Publication No. US 20120038013 A1;
  • Figure 3 is a schematic view of an X-ray flat panel detector of a first embodiment of the present invention.
  • Figure 4 is a schematic view of an X-ray flat panel detector of a second embodiment of the present invention.
  • Figure 5 is a half of the X-ray flat panel detector of the first and second embodiments of the present invention Schematic diagram of a conductor photoelectric conversion module
  • Fig. 6 is a schematic view showing the distribution of black matrices of the X-ray flat panel detectors of the first and second embodiments of the present invention.
  • the present invention provides a non-visible light panel detector comprising a plurality of detecting units, and a non-visible light converting layer disposed above the detecting unit for converting non-visible light into visible light, each of the detecting units including being disposed on a substrate a thin film transistor, and a first insulating layer, a first electrode, a semiconductor photoelectric conversion module, and a second electrode, which are sequentially disposed above the thin film transistor and projected on the substrate and at least partially overlap the projection of the thin film transistor on the substrate;
  • the semiconductor photoelectric conversion module is configured to convert visible light into an electrical signal
  • the second electrode is in direct contact with the semiconductor photoelectric conversion module for stabilizing an electrical signal converted by the semiconductor photoelectric conversion module
  • the first electrode is electrically connected to a source of the thin film transistor through a via hole penetrating the first insulating layer, and is configured to transmit an electrical signal stabilized by the second electrode to the thin film transistor, and when the thin film transistor is turned on, The electrical signal is transmitted to a data processing circuit.
  • the non-visible light may be X-rays, infrared rays, ultraviolet rays or the like.
  • the non-visible flat panel detector is an X-ray flat panel detector; and the non-visible light conversion layer is an X-ray conversion layer.
  • the non-visible flat panel detector is an infrared flat panel detector; and the non-visible light conversion layer is an infrared conversion layer.
  • the non-visible light is other light such as ultraviolet rays
  • the non-visible flat panel detector and the non-visible light conversion layer employ corresponding flat panel detectors and a light conversion layer.
  • the non-visible light is taken as an example of X-ray.
  • FIG. 3 is a schematic view showing an X-ray flat panel detector of a first embodiment of the present invention.
  • the embodiment provides an X-ray flat panel detector including a plurality of detecting units disposed on the substrate 10, and an X-ray conversion layer 6 disposed above the respective detecting units, wherein each of the detecting units includes a thin film transistor 1, a first insulating layer 2, which are sequentially disposed on the substrate 10.
  • An electrode 3 inductive/receiving electrode
  • a semiconductor photoelectric conversion module 4 which includes at least a semiconductor photoelectric conversion layer 41, see FIGS. 5-6), a second electrode 5, and a first insulating layer 2, a first electrode 3, and a semiconductor
  • the projection of the photoelectric conversion module 4, the second electrode 5 on the substrate 10 and the projection of the thin film transistor 1 on the substrate 10 at least partially overlap.
  • the X-ray conversion layer 6 converts the received X-ray into visible light; then, the material of the semiconductor photoelectric conversion module 4 is a-Si:H, which can generate carriers according to visible light (current signal)
  • the second electrode 5 since the second electrode 5 is in direct contact with the semiconductor photoelectric conversion module 4, the potential of the carrier can be stabilized well; the first electrode 3 serves as both the sensing electrode and the receiving electrode, and receives the output of the semiconductor photoelectric conversion module 4.
  • a current signal electrical signal
  • the first electrode 3 is connected to the source of the thin film transistor 1, and when the thin film transistor 1 is driven to be turned on by an external driving circuit, the current signal can pass through the thin film connected to the first electrode 3.
  • the drain output of transistor 1 is transmitted to a data processing circuit to produce image data which is ultimately displayed by the display.
  • the first electrode 3 is a plate electrode, and the electrical signal generated by the semiconductor photoelectric conversion module 4 can be well received at this time to improve the detection accuracy of the X-ray flat panel detector.
  • the semiconductor photoelectric conversion module 4 in the present embodiment includes not only a semiconductor photoelectric conversion layer 41. And a hole transport layer 42 and an electron transport layer 43, wherein the hole transport layer 42 is disposed between the second electrode 5 and the semiconductor photoelectric conversion layer 41; the electron transport layer 43 is disposed at The semiconductor photoelectric conversion layer 41 is interposed between the first electrode 3.
  • the hole transport layer 42 contributes to the transport of charges in the semiconductor photoelectric conversion layer 41, and the electron transport layer 43 contributes to the transport of electrons received by the first electrode 3.
  • FIG. 6 is a schematic view showing the distribution of a black matrix of an X-ray flat panel detector according to an embodiment of the present invention.
  • the X-ray flat panel inspection of the present embodiment is shown.
  • Each detection unit of the detector includes a detection area and a peripheral area surrounding the detection area.
  • a peripheral area of each detection unit is provided with a pattern of the black matrix 14; wherein the black matrix 14 can be formed.
  • the preparation of the two electrodes 5 may also be performed after the formation of the second electrode 5; that is, the black matrix 14 may be disposed between the second electrode 5 and the X-ray conversion layer 6, or may be disposed on the second electrode 5 and the semiconductor photoelectric conversion Between modules 4. Since the peripheral area of each detecting unit in this embodiment is correspondingly provided with a circle of surrounding black matrix 14, it is possible to effectively prevent signal crosstalk between the light detected by each detecting unit and affect the accuracy of detection.
  • the projection of the first electrode 3, the semiconductor photoelectric conversion module 4, and the second electrode 5 on the substrate 10 completely covers the projection of the thin film transistor 1 on the substrate 10, so as to reduce the occupation of each detection unit as much as possible.
  • the area which reduces the pixel size of the X-ray flat panel detector and improves the resolution.
  • the embodiment further provides a method for preparing the X-ray flat panel detector described above, which specifically includes steps 1 to 7.
  • Step 1 On the substrate 10 , the layer structure of the thin film transistor 1 included in the detecting unit is formed by a patterning process.
  • the preparation method of each layer structure of the thin film transistor 1 is known to those skilled in the art, and is not detailed here. description.
  • Step 2 On the substrate 10 on which the above steps are completed, the first insulating layer 2 is formed, and a via hole is formed at a position of the first insulating layer 2 corresponding to the source of the thin film transistor 1.
  • the first insulating layer 2 may be an oxide of silicon (SiOx), a nitride of silicon (SiNx), an oxide of hafnium (HfOx), an oxide of silicon (SiOxNy), an oxide of aluminum (AlOx), or the like.
  • SiOx oxide of silicon
  • SiNx nitride of silicon
  • HfOx oxide of hafnium
  • SiOxNy oxide of silicon
  • AlOx aluminum
  • Step 3 On the substrate 10 on which the above steps are completed, a pattern including the first electrode 3 is formed by a patterning process, and the first electrode 3 is connected to the source of the thin film transistor 1 through the via hole formed in the second step.
  • the thickness and material of the first electrode 3 may be determined according to the material of the semiconductor photoelectric conversion module 4 which is subsequently prepared, or the first electrode 3 may also be molybdenum (Mo), molybdenum-niobium alloy (MoNb), aluminum commonly used in display devices. (Al), aluminum-niobium alloy (AlNd), A single-layer or multi-layer composite laminate formed of one of titanium (Ti) and copper (Cu) or a plurality of materials thereof.
  • Mo molybdenum
  • MoNb molybdenum-niobium alloy
  • AlNd aluminum-niobium alloy
  • AlNd aluminum-niobium alloy
  • Step 4 on the substrate 10 on which the above steps are completed, a pattern including the semiconductor photoelectric conversion module 4 is formed by a patterning process.
  • the step may specifically include sequentially forming an electron transport layer 43, a semiconductor photoelectric conversion layer 41, and a hole transport layer 42 on the substrate 10 that completes the above steps.
  • the material of the semiconductor photoelectric conversion layer 41 may be a-Si:H. If the non-visible light is infrared light, the material of the semiconductor photoelectric conversion layer 41 can be selected from PbS.
  • Step 5 on the substrate 10 which has completed the above steps, a pattern including the second electrode 5 is formed by a patterning process.
  • the second electrode 5 is in direct contact with the semiconductor photoelectric conversion module 4, and if light is to be irradiated into the semiconductor photoelectric conversion module 4, the material of the selected second electrode 5 must be a light transmissive material.
  • the material structure of the second electrode 5 is preferably ITO (indium tin oxide) / Ag (silver) / ITO (indium tin oxide) or Ag (silver) / ITO (indium tin oxide); or, in the above material structure ITO is replaced by IZO (indium zinc oxide), IGZO (indium gallium zinc oxide) or InGaSnO (indium gallium tin oxide).
  • Step 6 On the substrate 10 on which the above steps are completed, a pattern including the black matrix 14 is formed on the second electrode 5 of the peripheral region of each of the detecting units by a patterning process. This step may or may not be necessary, of course, so that the signal crosstalk between the light detected by each detecting unit can be effectively prevented from affecting the accuracy of the detection.
  • step of forming the black matrix 14 may also be before the formation of the second electrode 5.
  • Step 7 On the substrate 10 on which the above steps are completed, the X-ray conversion layer 6 is formed.
  • the preparation method of the X-ray flat panel detector provided in this embodiment is simple, and it can be seen from the above method that the second electrode 5 is in direct contact with the semiconductor photoelectric conversion module 4, and the formation of the via hole in the prior art is omitted at this time. a step of connecting the second electrode 5 to the semiconductor photoelectric conversion module 4, thus producing an X-ray flat panel detector higher efficiency.
  • non-visible flat panel detectors such as an infrared flat panel detector and an ultraviolet flat panel detector can be prepared according to the above method, and will not be described herein.
  • FIG. 4 is a schematic view showing an X-ray flat panel detector of a second embodiment of the present invention.
  • the present embodiment provides an X-ray flat panel detector including a plurality of detections disposed on a substrate 10. a unit, and an X-ray conversion layer 6 disposed above each of the detecting units, wherein each of the detecting units includes a thin film transistor 1, a first insulating layer 2, a first electrode 3 (sensing electrode), and a first layer, which are sequentially disposed on the substrate 10. a second insulating layer 7, a third electrode 8 (receiving electrode), a semiconductor photoelectric conversion module 4 (which includes at least a semiconductor photoelectric conversion layer 41, see FIGS.
  • the X-ray conversion layer 6 converts the received X-ray into visible light; then, the material of the semiconductor photoelectric conversion module 4 can select a-Si:H, which can generate carriers according to visible light (current signal) At this time, since the second electrode 5 is in direct contact with the semiconductor photoelectric conversion module 4, the potential of the carrier can be well stabilized; the third electrode 8 receives the current signal as a receiving electrode, and transmits the current signal to The first electrode 3, the first electrode 3 serves as a sensing electrode, and senses a current signal received by the third electrode 8. At this time, the first electrode 3 outputs a capacitance signal (electrical signal), and the first electrode 3 and the thin film transistor 1 Source connection.
  • a capacitance signal electrical signal
  • the capacitance signal can be output to the data processing circuit through the drain output of the thin film transistor 1 connected to the first electrode 3 to generate image data, and finally the image is The data is displayed on the display.
  • the first electrode 3 and the third electrode 8 are preferably plate electrodes, and the two electrodes are oppositely disposed to constitute a capacitor. Since the first electrode 3 and the third electrode 8 both use plate electrodes, the sensitivity of the sensing can be greatly improved. And the accuracy of the reception, thereby improving the detection accuracy of the X-ray flat panel detector.
  • the first electrode 3 may also be a plurality of small-area electrodes that are separated. As long as the third electrode 8 completely covers the thin film transistor 1.
  • the photoelectric conversion module 4 in the present embodiment includes not only the semiconductor photoelectric conversion layer 41 but also a hole transport layer 42 and an electron transport layer 43, wherein the hole transport layer 42 is disposed on the second electrode 5
  • the semiconductor transfer layer 41 is disposed between the semiconductor photoelectric conversion layer 41 and the third electrode 8.
  • the hole transport layer 42 contributes to the transport of charges in the semiconductor photoelectric conversion layer 41
  • the electron transport layer 43 contributes to the transport of electrons received by the third electrode 8.
  • each detecting unit of the X-ray flat panel detector of the present embodiment includes a detecting area and a peripheral area to be surrounded by the detecting area, and in the embodiment, the peripheral area of each detecting unit is provided with the black matrix 14 a pattern; wherein the black matrix 14 may be prepared before the second electrode 5 is formed or after the second electrode 5 is formed; that is, the black matrix 14 may be disposed between the second electrode 5 and the X-ray conversion layer 6, or It is disposed between the second electrode 5 and the semiconductor photoelectric conversion module 4. Since the peripheral area of each detecting unit in this embodiment is correspondingly provided with a circle of surrounding black matrix 14, it is possible to effectively prevent signal crosstalk between the light detected by each detecting unit and affect the accuracy of detection.
  • the projection of the first electrode 3, the third electrode 8, the semiconductor photoelectric conversion module 4, and the second electrode 5 on the substrate 10 completely covers the projection of the thin film transistor 1 on the substrate 10, so that it can be reduced as much as possible.
  • the footprint of each detection unit reduces the pixel size of the X-ray flat panel detector and improves resolution.
  • the embodiment further provides a method for preparing the X-ray flat panel detector described above, which specifically includes steps 1 to 9.
  • Step 1 On the substrate 10 , the layer structure of the thin film transistor 1 included in the detecting unit is formed by a patterning process, wherein the preparation of the layer structures of the thin film transistor 1 is well known to those skilled in the art, and is not detailed here. description.
  • Step 2 forming a first insulating layer 2 on the substrate 10 completing the above steps, and forming a position at a position corresponding to the source of the thin film transistor 1 of the first insulating layer 2 Through hole.
  • the first insulating layer 2 may be an oxide of silicon (SiOx), a nitride of silicon (SiNx), an oxide of hafnium (HfOx), an oxide of silicon (SiOxNy), an oxide of aluminum (AlOx), or the like.
  • SiOx oxide of silicon
  • SiNx nitride of silicon
  • HfOx oxide of hafnium
  • SiOxNy oxide of silicon
  • AlOx aluminum
  • Step 3 On the substrate 10 on which the above steps are completed, a pattern including the first electrode 3 is formed by a patterning process, and the first electrode 3 is connected to the source of the thin film transistor 1 through the via hole formed in the second step.
  • the thickness and material of the first electrode 3 may be determined according to the material of the semiconductor photoelectric conversion module 4 which is subsequently prepared, or the first electrode 3 may also be molybdenum (Mo), molybdenum-niobium alloy (MoNb), aluminum commonly used in display devices.
  • Mo molybdenum
  • MoNb molybdenum-niobium alloy
  • AlNd aluminum-niobium alloy
  • Ti titanium
  • Cu copper
  • Step 4 On the substrate 10 on which the above steps are completed, a second insulating layer 7 is formed.
  • the second insulating layer 7 may be an oxide of silicon (SiOx), a nitride of silicon (SiNx), an oxide of hafnium (HfOx), an oxide of silicon (SiOxNy), an oxide of aluminum (AlOx), or the like.
  • a single or multilayer film structure formed of one or two or three of these materials may have a thickness between 10 and 20 nm.
  • Step 5 On the substrate 10 which has completed the above steps, a pattern including the third electrode 8 is formed by a patterning process.
  • the material of the third electrode 8 is an opaque metal for blocking light from being incident on the thin film transistor 1.
  • Step 6 On the substrate 10 on which the above steps are completed, a pattern including the semiconductor photoelectric conversion module 4 is formed by a patterning process.
  • the step may specifically include sequentially forming an electron transport layer 43, a semiconductor photoelectric conversion layer 41, and a hole transport layer 42 on the substrate 10 that completes the above steps.
  • the material of the semiconductor photoelectric conversion layer 41 may be a-Si:H. If the non-visible light is infrared light, the material of the semiconductor photoelectric conversion layer 41 can be selected from PbS.
  • Step 7 On the substrate 10 which has completed the above steps, a pattern including the second electrode 5 is formed by a patterning process.
  • the second electrode 5 is in direct contact with the semiconductor photoelectric conversion module 4, and if light is to be irradiated into the semiconductor photoelectric conversion module 4, the material of the selected second electrode 5 must be a light transmissive material, preferably a second electrode.
  • the material structure of 5 is ITO (indium tin oxide) / Ag (silver) / ITO (indium tin oxide) or Ag (silver) / ITO (indium tin oxide); or, the ITO in the above structure can be replaced by IZO (oxidation) Indium zinc), IGZO (indium gallium zinc oxide) or InGaSnO (indium gallium tin oxide).
  • Step 8 On the substrate 10 which has completed the above steps, a pattern including the black matrix 14 is formed on the second electrode 5 of the peripheral region of each of the detecting units by a patterning process. This step may or may not be necessary, of course, so that the signal crosstalk between the light detected by each detecting unit can be effectively prevented from affecting the accuracy of the detection.
  • step of forming the black matrix 14 may also be before the formation of the second electrode 5.
  • Step 9 On the substrate 10 which has completed the above steps, the X-ray conversion layer 6 is formed.
  • the preparation method of the X-ray flat panel detector provided in this embodiment is simple, and it can be seen from the above method that the second electrode 5 is in direct contact with the semiconductor photoelectric conversion module 4, and the prior art is also omitted.
  • the hole allows the second electrode 5 to be connected to the semiconductor photoelectric conversion module 4, and thus the production efficiency of the X-ray flat panel detector is higher.
  • non-visible flat panel detectors such as an infrared flat panel detector and an ultraviolet flat panel detector can be prepared according to the above method, and will not be described herein.
  • the imaging device may comprise an X-ray flat panel detector in the first or second embodiment.
  • the image device may be any product or component having a display function such as a liquid crystal panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a display, a notebook computer, or the like.
  • the image The device may also include an infrared flat panel detector, or an ultraviolet flat panel detector, respectively.

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Abstract

提供一种非可见光平板检测器及其制备方法、一种影像设备，属于检测技术领域，其可解决现有的非可见光平板检测器的结构复杂、制备工艺繁琐的问题。非可见光平板检测器包括多个检测单元、以及设置在各检测单元上方的用于将非可见光转换成可见光的非可见光转换层(6)，每个所述检测单元包括设置在基底上的薄膜晶体管(1)，依次设置在薄膜晶体管(1)上方且在基底上的投影与所述薄膜晶体管(1)在基底上的投影至少部分重叠的第一绝缘层(2)、第一电极(3)、半导体光电转换模块(4)、第二电极(5)。

Description

非可见光平板检测器及其制备方法、影像设备 技术领域
本发明属于检测技术领域，具体涉及非可见光平板检测器及其制备方法、影像设备。
背景技术
近年来平板检测技术取得了飞跃性的发展，平板检测技术可分为直接和间接两类，间接平板检测器的关键部件是获取图像的平板检测器(FPD)。例如，图1示出了现有的X射线平板检测器的示意图，如图1所示，该X射线平板检测器主要包括X射线转换层11、光检测器件12(通常为PIN型光电二极管)、电子信号检测器件13(通常为薄膜晶体管)。当X射线照射X射线转换层11时，X射线转换层11将X射线转换为可见光，再由光检测器件12将该可见光转化为电信号，并进行存储。在驱动电路的作用下，薄膜晶体管被导通，从而经过PIN型光电二极管12所转换的电信号经由薄膜晶体管传输到数据处理电路，数据处理电路会对该电信号作进一步的放大、模/数转换等处理，最终获得图像信息。
X射线平板检测器中的PIN型光电二极管12与薄膜晶体管13通常是并行排布的，因此这两者之间的干扰信号较强，制备该X射线平板检测器的工艺流程复杂，从而X射线平板检测器的检测精度难以进一步提高。图2示出了公开号为US 20120038013A1的美国专利申请中所公开的X射线平板检测器的示意图，该X射线平板检测器为一种垂直布局的X射线平板检测器。如图2所示，其包括从上至下依次排布的X射线转换层6、半导体光电转换层4、第二绝缘层9、同层且平行设置的第一电极3和第二电极(图中未示出)、第一绝缘层2、薄膜晶体管1，其中，半导体光电转换层4用于将光信号转化为电信号，第二电极通过贯穿第二绝缘层9 的过孔与半导体光电转换层4接触，用于稳定半导体光电转换层4所转化出的电信号，第一电极3与薄膜晶体管1的源极连接，用于感应该电信号，并在薄膜晶体管1导通时将该电信号传输给数据处理电路。
发明人发现现有技术中至少存在如下问题：虽然美国专利申请中所公开的X射线平板检测器由于具有垂直设置的结构而可以削减信号干扰的问题，但是其中需要在第二绝缘层9中形成过孔才能使所提供的用于稳定由半导体光电转换层4所转化的电信号的第二电极与半导体光电转换层4接触，因此工艺复杂；而且第一电极3和第二电极同层设置，故两者均并非为结构连续的板状电极，因此第一电极3所感应的电信号并不强，故传输给薄膜晶体管1之后也不是很好，从而影响检测的精确度。
发明内容
本发明的目的之一在于，针对现有的非可见光平板检测器存在的上述问题，提供一种体积较小、制备工艺简单的非可见光平板检测器及其制备方法、一种影像设备。
为了实现上述目的所采用的一种技术方案是一种非可见光平板检测器，包括多个检测单元、以及设置在检测单元上方的用于将非可见光转换成可见光的非可见光转换层，每个所述检测单元包括设置在基底上的薄膜晶体管、以及依次设置在薄膜晶体管上方且在基底上的投影与所述薄膜晶体管在基底上的投影至少部分重叠的第一绝缘层、第一电极、半导体光电转换模块、第二电极；
所述半导体光电转换模块用于将可见光转换成电信号；
所述第二电极与所述半导体光电转换模块直接接触，用于稳定由所述半导体光电转换模块转换得到的电信号；
所述第一电极通过贯穿第一绝缘层的过孔与薄膜晶体管的源极电连接，用于将经所述第二电极稳定的电信号传输给薄膜晶体管，并在薄膜晶体管导通时，将该电信号传输给数据处理电路。
优选的是，所述第一电极为板状电极。
优选的是，所述半导体光电转换模块至少包括半导体光电转换层。
进一步优选的是，所述半导体光电转换模块还包括空穴传输层和电子传输层；
所述空穴传输层设置在所述第二电极与所述半导体光电转换层之间；
所述电子传输层设置在所述半导体光电转换层与所述第一电极之间。
优选的，所述非可见光平板检测器还包括第三电极，
所述第三电极设置在所述第一电极和所述半导体光电转换模块之间，且通过第二绝缘层与所述第一电极隔开；所述第三电极用于接收经所述第二电极稳定的电信号，并将该电信号传递给所述第一电极。
进一步优选的，所述第三电极的材料为非透明导电材料。
进一步优选的，所述第一电极和所述第三电极均为板状电极。
进一步优选的，所述半导体光电转换模块至少包括半导体光电转换层。
进一步优选的，所述半导体光电转换模块还包括空穴传输层和电子传输层；
所述空穴传输层设置在所述第二电极与所述半导体光电转换层之间；
所述电子传输层设置在所述半导体光电转换层与所述第三电极之间。
优选的是，所述非可见光平板检测器还包括设置在每个检测单元的周边区域的黑矩阵；所述黑矩阵位于所述第二电极所在的层与所述非可见光转换层之间。
优选的是，所述非可见光平板检测器还包括设置在每个检测单元的周边区域的黑矩阵；所述黑矩阵位于所述第二电极所在的层与所述半导体光电转换模块之间。
优选的是，所述第一电极、半导体光电转换模块、第二电极 在基底上的投影将所述薄膜晶体管在基底上的投影完全覆盖。
优选的是，所述非可见光为X射线、红外线、紫外线中的任意一种。
优选的是，所述第二电极的材料为透明导电材料。
为了实现上述目的所采用的另一技术方案是一种非可见光平板检测器的制备方法，所述非可见光平板检测器为上述任意一种非可见光平板检测器，所述制备方法包括：
在基底上形成各个检测单元的薄膜晶体管、第一绝缘层、第一电极、半导体光电转换模块、第二电极以及形成非可见光转换层；其中，所述第二电极与所述半导体光电转换模块直接接触。
优选的是，所述制备方法还包括在所述第一电极与半导体光电转换模块所在的层之间形成第二绝缘层和第三电极。
为了实现上述目的所采用的再一技术方案是一种影像设备，其包括上述任意一种非可见光平板检测器。
本发明具有如下有益效果。
由于本发明的非可见光平板检测器中的第一绝缘层、第一电极、半导体光电转换模块、第二电极和薄膜晶体管在基底上的投影至少部分重叠，也就是说本发明的非可见光平板检测器的各个部件是垂直分布，故其体积较小、易于实现高分辨的设计、性能较好，而且第二电极与半导体光电转换模块直接接触，故无需如现有技术中的制备使两者接触的过孔，因此制备工艺简单、生产效率提高。
附图说明
图1为现有的X射线平板检测器的示意图；
图2为公开号为US 20120038013A1的美国专利申请中所公开的X射线平板检测器的示意图；
图3为本发明的第一实施例的X射线平板检测器的示意图；
图4为本发明的第二实施例的X射线平板检测器的示意图；
图5为本发明的第一和第二实施例的X射线平板检测器的半 导体光电转换模块的示意图；
图6为本发明的第一和第二实施例的X射线平板检测器的黑矩阵的分布示意图。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
本发明提供一种非可见光平板检测器，包括多个检测单元、以及设置在检测单元上方的用于将非可见光转换成可见光的非可见光转换层，每个所述检测单元包括设置在基底上的薄膜晶体管、以及依次设置在薄膜晶体管上方且在基底上的投影与所述薄膜晶体管在基底上的投影至少部分重叠的第一绝缘层、第一电极、半导体光电转换模块、第二电极；
所述半导体光电转换模块用于将可见光转换成电信号；
所述第二电极与所述半导体光电转换模块直接接触，用于稳定由所述半导体光电转换模块转换得到的电信号；
所述第一电极通过贯穿第一绝缘层的过孔与薄膜晶体管的源极电连接，用于将经所述第二电极稳定的电信号传输给薄膜晶体管，并在薄膜晶体管导通时，将该电信号传输给数据处理电路。
本发明中，非可见光可以为X射线、红外线、紫外线等。当非可见光为X射线时，非可见光平板检测器则为X射线平板检测器；非可见光转换层则为X射线转换层。相应的，当非可见光为红外线时，非可见光平板检测器则为红外线平板检测器；非可见光转换层则为红外线转换层。同理，当非可见光为紫外线等其他光线时，非可见光平板检测器和非可见光转换层采用相应的平板检测器和光转换层。以下以非可见光为X射线为例进行说明。
第一实施例
图3示出了本发明的第一实施例的X射线平板检测器的示意图，如图3所示，本实施例提供一种X射线平板检测器，其包括 设置在基底10上的多个检测单元、以及设置在各个检测单元上方的X射线转换层6，其中，每一个检测单元包括依次设置在基底10上的薄膜晶体管1、第一绝缘层2、第一电极3(感应/接收电极)、半导体光电转换模块4(其至少包括半导体光电转换层41，参见图5-6)、第二电极5，且第一绝缘层2、第一电极3、半导体光电转换模块4、第二电极5在基底10上的投影与薄膜晶体管1在基底10上的投影至少部分重叠。
具体的，首先，X射线转换层6将所接收到的X射线转化为可见光；然后，半导体光电转换模块4的材料为a-Si：H，该种材料可以根据可见光生成载流子(电流信号)，此时由于第二电极5与半导体光电转换模块4直接接触，因此可以很好地稳定载流子的电势；第一电极3既作为感应电极又作为接收电极，接收半导体光电转换模块4输出的电流信号(电信号)，并且第一电极3与薄膜晶体管1的源极连接，当薄膜晶体管1被外部的驱动电路驱动而导通时，该电流信号可以通过与第一电极3连接的薄膜晶体管1的漏极输出，传输给数据处理电路，以产生图像数据，最终将该图像数据通过显示器进行显示。
优选的，第一电极3为板状电极，此时可以很好地接收由半导体光电转换模块4生成的电信号，以提高X射线平板检测器的检测精确度。
图5示出了根据本发明实施例的X射线平板检测器的半导体光电转换模块的示意图，如图5所示，优选的，本实施例中的半导体光电转换模块4不仅包括半导体光电转换层41，还包括空穴传输层42和电子传输层43，其中，所述空穴传输层42设置在所述第二电极5与所述半导体光电转换层41之间；所述电子传输层43设置在所述半导体光电转换层41与所述第一电极3之间。空穴传输层42有助于半导体光电转换层41中的电荷的传输，电子传输层43有助于第一电极3所接收的电子的传输。
图6示出了根据本发明实施例的X射线平板检测器的黑矩阵的分布示意图，如图6所示，优选的，本实施例的X射线平板检 测器的每个检测单元均包括检测区域和将检测区域包围的周边区域，在本实施例中，每个检测单元的周边区域均设置有黑矩阵14的图案；其中黑矩阵14可以在形成第二电极5之前制备也可以在形成第二电极5之后制备；也就是说黑矩阵14可以设置在第二电极5和X射线转换层6之间，也可以设置在第二电极5和半导体光电转换模块4之间。由于本实施例中的每个检测单元的周边区域均对应设置有一圈环绕的黑矩阵14，因此可以有效地防止每个检测单元所检测的光线之间发生信号串扰而影响检测的精确性。
优选的，第一电极3、半导体光电转换模块4、第二电极5在基底10上的投影将薄膜晶体管1在基底10上的投影完全覆盖，以使得尽可能地减小每一个检测单元的占用面积，从而减小X射线平板检测器的像素尺寸，提高分辨率。
相应的，本实施例还提供了上述的X射线平板检测器的制备方法，具体包括步骤一至步骤七。
步骤一、在基底10上，通过构图工艺，形成检测单元包括的薄膜晶体管1的各层结构，其中，薄膜晶体管1的各层结构的制备方法为本领域技术人员所公知，在此不再详细描述。
步骤二、在完成上述步骤的基底10上，形成第一绝缘层2，并在第一绝缘层2的与薄膜晶体管1的源极对应的位置形成一个过孔。
第一绝缘层2可以为由硅的氧化物(SiOx)、硅的氮化物(SiNx)、铪的氧化物(HfOx)、硅的氮氧化物(SiOxNy)、铝的氧化物(AlOx)等中的一种或其中的两种或三种材料形成的单层或多层膜结构。
步骤三、在完成上述步骤的基底10上，通过构图工艺形成包括第一电极3的图形，且第一电极3通过步骤二中所形成的过孔与薄膜晶体管1的源极连接。
第一电极3的厚度和材料可以根据后续制备的半导体光电转换模块4的材料而定，或者，第一电极3也可以为显示器件中常用的钼(Mo)、钼铌合金(MoNb)、铝(Al)、铝钕合金(AlNd)、 钛(Ti)和铜(Cu)中的一种或它们中的多种材料形成的单层或多层复合叠层。
步骤四、在完成上述步骤的基底10上，通过构图工艺形成包括半导体光电转换模块4的图形。
优选的，该步骤具体可以包括：在完成上述步骤的基底10上，依次形成电子传输层43、半导体光电转换层41、以及空穴传输层42。
由于非可见光为X射线，故半导体光电转换层41的材料可以为a-Si：H。若非可见光为红外线，此时半导体光电转换层41的材料则可以选取PbS。
步骤五，在完成上述步骤的基底10上，通过构图工艺形成包括第二电极5的图形。
第二电极5与所述半导体光电转换模块4直接接触，而若要使光线能够照射至半导体光电转换模块4中，所选取的第二电极5的材料必须为透光材料。优选的第二电极5的材料结构为ITO(氧化铟锡)/Ag(银)/ITO(氧化铟锡)或者Ag(银)/ITO(氧化铟锡)；或者，可以把上述材料结构中的ITO换成IZO(氧化铟锌)、IGZO(氧化铟镓锌)或InGaSnO(氧化铟镓锡)。
步骤六、在完成上述步骤的基底10上，通过构图工艺在每个检测单元的周边区域的第二电极5上形成包括黑矩阵14的图形。该步骤可有可无，当然优选有，这样可以有效地防止每个检测单元所检测的光线之间发生信号串扰而影响检测的精确性。
在此需要说明的是，形成黑矩阵14的步骤也可以在形成第二电极5之前。
步骤七、在完成上述步骤的基底10上，形成X射线转换层6。
至此，完成了X射线平板检测器的制备。
本实施例中所提供的X射线平板检测器的制备方法简单，而且从上述方法中可以看出，第二电极5与半导体光电转换模块4直接接触，此时省略了现有技术中形成过孔来使第二电极5与半导体光电转换模块4连接的步骤，因此X射线平板检测器的生产 效率更高。
同理，按照上述方法可以制备红外线平板检测器、紫外线平板检测器等其他非可见光的平板检测器，在此不一一赘述。
第二实施例
图4示出了本发明的第二实施例的X射线平板检测器的示意图，如图4所示，本实施例提供一种X射线平板检测器，其包括设置在基底10上的多个检测单元、以及设置在各个检测单元上方的X射线转换层6，其中，每一个检测单元包括依次设置在基底10上的薄膜晶体管1、第一绝缘层2、第一电极3(感应电极)、第二绝缘层7、第三电极8(接收电极)、半导体光电转换模块4(其至少包括半导体光电转换层41，参见图5-6)、第二电极5，且第一绝缘层2、第一电极3、第二绝缘层7、第三电极8、半导体光电转换模块4、第二电极5在基底10上的投影与薄膜晶体管1在基底10上的投影至少部分重叠。
具体的，首先，X射线转换层6将所接收的X射线转化为可见光；然后，半导体光电转换模块4的材料可以选取a-Si：H，该种材料可以根据可见光生成载流子(电流信号)，此时由于第二电极5与半导体光电转换模块4直接接触，因此可以很好地稳定载流子的电势；第三电极8作为接收电极接收到该电流信号，并将该电流信号传递给第一电极3，第一电极3作为感应电极，感应到第三电极8所接收到的电流信号，此时第一电极3输出电容信号(电信号)，而第一电极3与薄膜晶体管1的源极连接。当薄膜晶体管1被外部的驱动电路驱动而导通时，该电容信号可以通过与第一电极3连接的薄膜晶体管1的漏极输出，传输给数据处理电路，以产生图像数据，最终将该图像数据通过显示器进行显示。
需要说明的是，在本实施例中，第一电极3和第三电极8优选为板状电极，且两电极相对设置，构成电容。由于第一电极3和第三电极8均采用板状电极，因此可以大大提高感应的灵敏度、 以及接收的精确度，从而提高X射线平板检测器的检测精确度。当然，第一电极3也可以是分隔开的多个小面积的电极。只要第三电极8将薄膜晶体管1完全覆盖即可。
优选的，本实施例中的光电转换模块4不仅包括半导体光电转换层41，还包括空穴传输层42和电子传输层43，其中，所述空穴传输层42设置在所述第二电极5与所述半导体光电转换层41之间；所述电子传输层43设置在所述半导体光电转换层41与所述第三电极8之间。空穴传输层42有助于半导体光电转换层41中的电荷的传输，电子传输层43有助于第三电极8所接收的电子的传输。
优选的，本实施例的X射线平板检测器的每个检测单元均包括检测区域和将将检测区域包围的周边区域，在本实施例中每个检测单元的周边区域均设置有黑矩阵14的图案；其中黑矩阵14可以在形成第二电极5之前制备也可以在形成第二电极5之后制备；也就是说黑矩阵14可以设置在第二电极5和X射线转换层6之间，也可以设置在第二电极5和半导体光电转换模块4之间。由于本实施例中的每个检测单元的周边区域均对应设置有一圈环绕的黑矩阵14，因此可以有效地防止每个检测单元所检测的光线之间发生信号串扰而影响检测的精确性。优选的，第一电极3、第三电极8、半导体光电转换模块4、第二电极5在基底10上的投影将薄膜晶体管1在基底10上的投影完全覆盖，以使得尽可以能地减小每一个检测单元的占用面积，从而减小X射线平板检测器的像素尺寸，提高分辨率。
相应的，本实施例还提供了上述的X射线平板检测器的制备方法，具体包括步骤一至步骤九。
步骤一、在基底10上，通过构图工艺，形成检测单元包括的薄膜晶体管1的各层结构，其中，薄膜晶体管1的各层结构的制备为本领域技术人员所公知的，在此不再详细描述。
步骤二、在完成上述步骤的基底10上，形成第一绝缘层2，并在第一绝缘层2的与薄膜晶体管1的源极对应的位置形成一个 过孔。
第一绝缘层2可以为由硅的氧化物(SiOx)、硅的氮化物(SiNx)、铪的氧化物(HfOx)、硅的氮氧化物(SiOxNy)、铝的氧化物(AlOx)等中的一种或其中的两种或三种材料形成的单层或多层膜结构。
步骤三、在完成上述步骤的基底10上，通过构图工艺形成包括第一电极3的图形，且第一电极3通过步骤二中所形成的过孔与薄膜晶体管1的源极连接。
第一电极3的厚度和材料可以根据后续制备的半导体光电转换模块4的材料而定，或者，第一电极3也可以为显示器件中常用的钼(Mo)、钼铌合金(MoNb)、铝(Al)、铝钕合金(AlNd)、钛(Ti)和铜(Cu)中的一种或它们中的多种材料形成的单层或多层复合叠层。
步骤四、在完成上述步骤的基底10上，形成第二绝缘层7。
第二绝缘层7可以为由硅的氧化物(SiOx)、硅的氮化物(SiNx)、铪的氧化物(HfOx)、硅的氮氧化物(SiOxNy)、铝的氧化物(AlOx)等中的一种或其中的两种或三种材料形成的单层或多层膜结构，其厚度可以在10-20nm之间。
步骤五、在完成上述步骤的基底10上，通过构图工艺形成包括第三电极8的图形。
第三电极8的材料为不透明金属，用于遮挡光线照射至薄膜晶体管1。
步骤六、在完成上述步骤的基底10上，通过构图工艺形成包括半导体光电转换模块4的图形。
优选的，该步骤具体可以包括：在完成上述步骤的基底10上，依次形成电子传输层43、半导体光电转换层41、以及空穴传输层42。
由于非可见光为X射线，故半导体光电转换层41的材料可以为a-Si：H。若非可见光为红外线，此时半导体光电转换层41的材料则可以选取PbS。
步骤七，在完成上述步骤的基底10上，通过构图工艺形成包括第二电极5的图形。
第二电极5与所述半导体光电转换模块4直接接触，而若要使光线能够照射至半导体光电转换模块4中，所选取的第二电极5的材料必须为透光材料，优选的第二电极5的材料结构为ITO(氧化铟锡)/Ag(银)/ITO(氧化铟锡)或者Ag(银)/ITO(氧化铟锡)；或者，可以把上述结构中的ITO换成IZO(氧化铟锌)、IGZO(氧化铟镓锌)或InGaSnO(氧化铟镓锡)。
步骤八、在完成上述步骤的基底10上，通过构图工艺在每个检测单元的周边区域的第二电极5上形成包括黑矩阵14的图形。该步骤可有可无，当然优选有，这样可以有效地防止每个检测单元所检测的光线之间发生信号串扰而影响检测的精确性。
在此需要说明的是，形成黑矩阵14的步骤也可以在形成第二电极5之前。
步骤九、在完成上述步骤的基底10上，形成X射线转换层6。
至此，完成了X射线平板检测器的制备。
本实施例中所提供的X射线平板检测器的制备方法简单，而且从上述方法中可以看出，第二电极5与半导体光电转换模块4直接接触，此时也省略了现有技术中形成过孔使第二电极5与半导体光电转换模块4连接的步骤，因此X射线平板检测器的生产效率更高。
同理，按照上述方法可以制备红外线平板检测器、紫外线平板检测器等其他非可见光的平板检测器，在此不一一赘述。
第三实施例
本实施例中提供了一种影像设备。该影像设备可以包括第一或第二实施例中X射线平板检测器。所述影像设备可以为：液晶面板、电子纸、OLED面板、手机、平板电脑、显示器、笔记本电脑等具有显示功能的任何产品或部件。
当然，当非可见光为红外线、紫外线等其他光源时，该影像 设备也可以相应地包括红外线平板检测器、或者紫外线平板检测器。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (17)

  1. 一种非可见光平板检测器，包括多个检测单元、以及设置在各检测单元上方的用于将非可见光转换成可见光的非可见光转换层，其中，每个所述检测单元包括设置在基底上的薄膜晶体管、以及依次设置在薄膜晶体管上方且在基底上的投影与所述薄膜晶体管在基底上的投影至少部分重叠的第一绝缘层、第一电极、半导体光电转换模块、第二电极；
    所述半导体光电转换模块用于将可见光转换成电信号；
    所述第二电极与所述半导体光电转换模块直接接触，用于稳定由所述半导体光电转换模块转换得到的电信号；
    所述第一电极通过贯穿第一绝缘层的过孔与薄膜晶体管的源极电连接，用于将经所述第二电极稳定的电信号传输给薄膜晶体管，并在薄膜晶体管导通时，将该电信号传输给数据处理电路。
  2. 根据权利要求1所述的非可见光平板检测器，其中，所述第一电极为板状电极。
  3. 根据权利要求1所述的非可见光平板检测器，其中，所述半导体光电转换模块至少包括半导体光电转换层。
  4. 根据权利要求3所述的非可见光平板检测器，其中，所述半导体光电转换模块还包括空穴传输层和电子传输层；
    所述空穴传输层设置在所述第二电极与所述半导体光电转换层之间；
    所述电子传输层设置在所述半导体光电转换层与所述第一电极之间。
  5. 根据权利要求1所述的非可见光平板检测器，其中，所述非可见光平板检测器还包括第三电极，
    所述第三电极设置在所述第一电极和所述半导体光电转换模块之间，且通过第二绝缘层与所述第一电极隔开；所述第三电极用于接收经所述第二电极稳定的电信号，并将该电信号传递给所述第一电极。
  6. 根据权利要求5所述的非可见光平板检测器，其中，所述第三电极的材料为非透明导电材料。
  7. 根据权利要求5所述的非可见光平板检测器，其中，所述第一电极和所述第三电极均为板状电极。
  8. 根据权利要求5所述的非可见光平板检测器，其中，所述半导体光电转换模块至少包括半导体光电转换层。
  9. 根据权利要求8所述的非可见光平板检测器，其中，所述半导体光电转换模块还包括空穴传输层和电子传输层；
    所述空穴传输层设置在所述第二电极与所述半导体光电转换层之间；
    所述电子传输层设置在所述半导体光电转换层与所述第三电极之间。
  10. 根据权利要求1-9中任意一项所述的非可见光平板检测器，其中，所述非可见光平板检测器还包括设置在每个检测单元的周边区域的黑矩阵；所述黑矩阵位于所述第二电极所在的层与所述非可见光转换层之间。
  11. 根据权利要求1-9中任意一项所述的非可见光平板检测器，其中，所述非可见光平板检测器还包括设置在每个检测单元的周边区域的黑矩阵；所述黑矩阵位于所述第二电极所在的层与所述半导体光电转换模块之间。
  12. 根据权利要求1-9中任意一项所述的非可见光平板检测器，其中，所述第一电极、所述半导体光电转换模块、所述第二电极在基底上的投影将所述薄膜晶体管在基底上的投影完全覆盖。
  13. 根据权利要求1-9中任意一项所述的非可见光平板检测器，其中，所述非可见光为X射线、红外线、紫外线中的任意一种。
  14. 根据权利要求1-9中任意一项所述的非可见光平板检测器，其中，所述第二电极的材料为透明导电材料。
  15. 一种非可见光平板检测器的制备方法，其中，所述非可见光平板检测器为权利要求1-14中任一项所述的非可见光平板检测器，所述制备方法包括：
    在基底上形成各个检测单元的薄膜晶体管、第一绝缘层、第一电极、半导体光电转换模块、第二电极以及形成非可见光转换层；其中，所述第二电极与所述半导体光电转换模块直接接触。
  16. 根据权利要求15所述的制备方法，还包括在所述第一电极与半导体光电转换模块所在的层之间形成第二绝缘层和第三电极。
  17. 一种影像设备，包括权利要求1-14中任一项所述的非可见光平板检测器。
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