WO2017000329A1 - 有机发光二极管显示器及其制造方法 - Google Patents

有机发光二极管显示器及其制造方法 Download PDF

Info

Publication number
WO2017000329A1
WO2017000329A1 PCT/CN2015/084328 CN2015084328W WO2017000329A1 WO 2017000329 A1 WO2017000329 A1 WO 2017000329A1 CN 2015084328 W CN2015084328 W CN 2015084328W WO 2017000329 A1 WO2017000329 A1 WO 2017000329A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
pixel electrode
organic light
conductive metal
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2015/084328
Other languages
English (en)
French (fr)
Inventor
徐超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US14/786,054 priority Critical patent/US20170155076A1/en
Publication of WO2017000329A1 publication Critical patent/WO2017000329A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an organic light emitting diode display, and to a method of fabricating the same.
  • OLED Organic Light-Emitting Diode
  • a pixel electrode is usually formed by sputtering an ITO (Indium-Tin Oxide) transparent electrode, and then a silver layer is formed on the pixel electrode.
  • ITO Indium-Tin Oxide
  • the ITO transparent electrode and the silver layer together constitute the anode of the top emission type organic light emitting diode display.
  • a drawback of the prior art organic light emitting diode display is that the price of the ITO transparent electrode is very expensive, which increases the overall manufacturing cost of the organic light emitting diode display.
  • the technical problem to be solved by the present invention is that the pixel electrode of the prior art organic light emitting diode display is a very expensive ITO transparent electrode, which increases the overall manufacturing cost of the organic light emitting diode display.
  • the present invention provides an organic light emitting diode display and a method of fabricating the same.
  • an organic light emitting diode display comprising:
  • the pixel electrode formed on the thin film transistor and electrically connected to the thin film transistor, the pixel electrode including a conductive metal layer and a protective layer formed on the conductive metal layer;
  • a hole transport layer, an organic light-emitting layer, an electron transport layer, and a cathode are sequentially formed on the pixel electrode.
  • the conductive metal layer is an aluminum layer or a silver layer.
  • the protective layer is a molybdenum layer.
  • the organic light emitting diode display further includes a buffer layer formed on the pixel electrode, the hole transport layer being formed on the buffer layer.
  • the buffer layer is one of a molybdenum trioxide layer, a vanadium pentoxide layer, a tungsten trioxide layer, and a nickel oxide layer.
  • the organic light emitting diode display further includes a cover layer formed on the cathode.
  • a method of fabricating an organic light emitting diode display includes:
  • a pixel electrode on the thin film transistor Forming a pixel electrode on the thin film transistor, electrically connecting the pixel electrode to the thin film transistor, and causing the pixel electrode to include a conductive metal layer and a protective layer formed on the conductive metal layer;
  • a hole transport layer, an organic light-emitting layer, an electron transport layer, and a cathode are sequentially formed on the pixel electrode.
  • the conductive metal layer is an aluminum layer or a silver layer; and the protective layer is a molybdenum layer.
  • the above manufacturing method further comprises: forming a buffer layer on the pixel electrode, and making the buffer layer a molybdenum trioxide layer, a vanadium pentoxide layer, and a trioxide One of a tungsten layer and a nickel oxide layer.
  • the above manufacturing method further comprises forming a cover layer on the cathode.
  • the pixel electrode is composed of a conductive metal layer and a protective layer which are sequentially formed on the thin film transistor.
  • the pixel electrode of the present invention is inexpensive, and the production cost of the display is greatly reduced.
  • the pixel electrode is formed by an electroplating process, which greatly simplifies the manufacturing process of the organic light emitting diode display compared to a complicated sputtering process.
  • FIG. 1 is a schematic structural view of an organic light emitting diode display according to an embodiment of the present invention.
  • FIG. 2 is a schematic flow chart showing an embodiment of the present invention for manufacturing an organic light emitting diode display
  • FIG. 3 shows another flow diagram of an embodiment of the present invention for fabricating an organic light emitting diode display.
  • the technical problem to be solved by the present invention is that the pixel electrode of the prior art organic light emitting diode display is a very expensive ITO transparent electrode, which increases the overall manufacturing cost of the organic light emitting diode display.
  • an embodiment of the present invention provides a low-cost organic light emitting diode display.
  • FIG. 1 is a schematic structural view of an organic light emitting diode display according to an embodiment of the present invention.
  • the organic light emitting diode display of the present embodiment mainly includes a substrate (not shown in the drawing), a thin film transistor (TFT), a pixel electrode 2, a hole transport layer (HTL, Hole Transport Layer) 4, and an organic An Emitting Material Layer (EML) 5, an Electro Transport Layer (ETL) 6, and a Semitransparent Cathode 7.
  • the thin film transistor 1 is formed on a substrate.
  • the pixel electrode 2 is formed on the thin film transistor 1 and is electrically connected to the source/drain of the thin film transistor 1.
  • the hole transport layer 4 is formed on the pixel electrode 2.
  • the organic light-emitting layer 5 is formed on the hole transport layer 4.
  • the electron transport layer 6 is formed on the organic light-emitting layer 5.
  • a cathode 7 which is translucent is formed on the electron transport layer 6.
  • the pixel electrode 2 of the present embodiment is a composite electrode composed of a conductive metal layer 21 and a protective layer 22.
  • the conductive metal layer 21 is formed on a passivation layer (not shown in the drawing) on the thin film transistor 1, and is electrically connected to the source/drain of the thin film transistor 1 through a via hole opened on the passivation layer.
  • a metal layer having conductivity is plated on the passivation layer to form a conductive metal layer 21.
  • the protective layer 22 formed on the conductive metal layer 21 can effectively slow down the oxidation process of the conductive metal layer 21.
  • the organic light emitting diode display of the present embodiment is a top emission type display.
  • the light emitted from the organic light-emitting layer 5 is reflected by the pixel electrode 2 and then emitted through the translucent cathode 7.
  • the direction of the light emitted from the cathode 7 is the direction of the arrow as shown in FIG.
  • the microcavity structure is formed by the pixel electrode 2 (i.e., the anode) and the translucent cathode 7, so that the color saturation of light can be improved by the microcavity effect.
  • the top emission type structure increases the aperture ratio of the organic light emitting diode display.
  • the pixel electrode 2 is composed of a conductive metal layer 21 and a protective layer 22 which are sequentially formed on the thin film transistor 1.
  • the pixel electrode 2 of the present embodiment is compared to the ITO transparent electrode formed by a sputtering process in the prior art. The low price, greatly reducing the production cost of the display.
  • the pixel electrode 2 of the present embodiment is formed by an electroplating process, which greatly simplifies the manufacturing process of the organic light emitting diode display compared to a complicated sputtering process.
  • the conductive metal layer 21 is an aluminum (Al) layer or a silver (Ag) layer.
  • the protective layer 22 is a molybdenum (Mo) layer.
  • Mo molybdenum
  • the molybdenum layer can effectively slow down the oxidation process of the aluminum layer or the silver layer, and is favorable for maintaining the conductivity of the conductive metal layer 21.
  • the organic light emitting diode display further includes a buffer layer 3 formed between the pixel electrode 2 and the hole transport layer 4. That is, the buffer layer 3 is formed on the pixel electrode 2.
  • the hole transport layer 4 is formed on the buffer layer 3.
  • the buffer layer 3 is preferably a transparent conductive metal oxide (TCO) layer such as a molybdenum trioxide (MoO 3 ) layer, a vanadium pentoxide (V 2 O 5 ) layer, and tungsten trioxide (WO 3 ). a layer, a nickel oxide (NiO) layer, or the like.
  • TCO transparent conductive metal oxide
  • the buffer layer 3 is added to modify the structure of the pixel electrode 2 (ie, the anode) to improve the hole injecting ability.
  • the function of the buffer layer 3 is to prevent a destructive reaction to the organic layer during electrode deposition while improving the charge transport efficiency by reducing the barrier of charge injection from the electrode to the organic layer.
  • the organic light emitting diode display of the preferred embodiment of the present invention further includes a capping layer 8 formed on the translucent cathode 7.
  • the cover layer 8 is preferably a hydroxyquinoline aluminum (Alq) layer or a magnesium oxide (MgO) layer.
  • the cover layer 8 serves as an index matching layer.
  • the light output of the display can be greatly improved by selecting an index matching layer of different materials and deposition thicknesses.
  • the cover layer 8 is also preferably a scattering layer, and the scattering layer can also achieve the purpose of improving the light extraction rate of the display.
  • embodiments of the present invention also provide a method for fabricating the above-described organic light emitting diode display.
  • FIG. 2 is a schematic flow chart of a method for manufacturing an organic light emitting diode display according to an embodiment of the present invention.
  • the manufacturing method described in this embodiment mainly includes steps 101 to 104.
  • step 101 a substrate is provided.
  • a thin film transistor 1 is formed on a substrate.
  • the thin film transistor 1 may be the bottom gate type thin film transistor 1 or the top gate type thin film transistor 1. Since the formation process of the thin film transistor 1 is a conventional technical means in the art, the development description will not be repeated herein.
  • the pixel electrode 2 is formed on the thin film transistor 1, the pixel electrode 2 is electrically connected to the thin film transistor 1, and the pixel electrode 2 includes the conductive metal layer 21 and the protective layer 22 formed on the conductive metal layer 21.
  • the conductive metal layer 21 and the protective layer 22 are each formed by an electroplating process. Specifically, after the passivation layer having via holes is formed on the thin film transistor 1, the conductive metal layer 21 and the protective layer 22 are sequentially formed on the passivation layer by an electroplating process. The conductive metal layer 21 is electrically connected to the source/drain of the thin film transistor 1 through the above via. Generally, a metal layer having conductivity is plated on the passivation layer to form a conductive metal layer 21. Forming a protective layer 22 on the conductive metal layer 21, In order to effectively slow down the oxidation process of the conductive metal layer 21.
  • step 104 the hole transport layer 4, the organic light-emitting layer 5, the electron transport layer 6, and the cathode 7 are sequentially formed on the pixel electrode 2.
  • the organic light emitting diode display manufactured by the present embodiment is a top emission type display.
  • the light emitted from the organic light-emitting layer 5 is reflected by the pixel electrode 2 and then emitted through the translucent cathode 7.
  • the microcavity structure is formed by the pixel electrode 2 (i.e., the anode) and the translucent cathode 7, so that the color saturation of light can be improved by the microcavity effect.
  • the top emission type structure increases the aperture ratio of the organic light emitting diode display.
  • the pixel electrode 2 is composed of a conductive metal layer 21 and a protective layer 22 which are sequentially formed on the thin film transistor 1.
  • the pixel electrode 2 formed by the present embodiment is inexpensive, and the production cost of the display is greatly reduced.
  • the formation of the pixel electrode 2 by the electroplating process greatly simplifies the manufacturing process of the organic light emitting diode display compared to a complicated sputtering process.
  • step 103 an aluminum layer or a silver layer is electroplated on the passivation layer to serve as the conductive metal layer 21.
  • a molybdenum layer is electroplated on the conductive metal layer 21 to serve as the protective layer 22.
  • the molybdenum layer can effectively slow down the oxidation process of the aluminum layer or the silver layer, and is favorable for maintaining the conductivity of the conductive metal layer 21.
  • step 105 is added between step 103 and step 104.
  • a buffer layer 3 is formed on the pixel electrode 2.
  • the buffer layer 3 is preferably a transparent conductive metal oxide layer such as a molybdenum trioxide layer, a vanadium pentoxide layer, a tungsten trioxide layer, a nickel oxide layer, or the like.
  • the buffer layer 3 is added to modify the structure of the pixel electrode 2 (ie, the anode) to improve the hole injecting ability.
  • the function of the buffer layer 3 is to prevent a destructive reaction to the organic layer during electrode deposition while improving the charge transport efficiency by reducing the barrier of charge injection from the electrode to the organic layer.
  • a preferred embodiment of the present invention further includes step 106.
  • a cap layer 8 is formed on the cathode 7.
  • the cover layer 8 is preferably a hydroxyquinoline aluminum (Alq) layer or a magnesium oxide (MgO) layer.
  • the cover layer 8 serves as an index matching layer.
  • the light output of the display can be greatly improved by selecting an index matching layer of different materials and deposition thicknesses.
  • the cover layer 8 is also preferably a scattering layer, and the scattering layer can also achieve the purpose of improving the light extraction rate of the display.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种有机发光二极管显示器及其制造方法，有机发光二极管显示器包括依次形成的衬底，薄膜晶体管（1）、像素电极（2）、空穴传输层（4）、有机发光层（5）、电子传输层（6）和阴极（7）。与薄膜晶体管电连接的像素电极（2）包括导电金属层（21）和形成在导电金属层上的保护层（22）。像素电极（2）通过电镀工艺形成，相比于复杂的溅射工艺，简化了显示器的制造工艺。

Description

有机发光二极管显示器及其制造方法
本申请要求享有2015年7月1日提交的名称为“有机发光二极管显示器及其制造方法”的中国专利申请CN201510376872.2的优先权，其全部内容通过引用并入本文中。
技术领域
本发明涉及显示技术领域，尤其涉及一种有机发光二极管显示器，还涉及该有机发光二极管显示器的制造方法。
背景技术
有机发光二极管(OLED,Organic Light-Emitting Diode)显示器具有亮度高、响应快、能耗低、可弯曲等优点。因此，有机发光二极管显示器被广泛地认为是下一代显示技术的焦点。
在制造现有技术中的有机发光二极管显示器的过程中，通常利用溅射ITO(Indium-Tin Oxide,氧化铟锡)透明电极的方式形成像素电极，然后在像素电极上形成银层。ITO透明电极与银层共同构成了顶发射型有机发光二极管显示器的阳极。
现有技术中的有机发光二极管显示器的缺陷在于：ITO透明电极的价格非常昂贵，这增加了有机发光二极管显示器的总体制造成本。
发明内容
本发明所要解决的技术问题是：现有技术中的有机发光二极管显示器的像素电极为价格非常昂贵的ITO透明电极，这增加了有机发光二极管显示器的总体制造成本。
为了解决上述技术问题，本发明提供了一种有机发光二极管显示器及其制造方法。
根据本发明的一个方面，提供了一种有机发光二极管显示器，其包括：
衬底；
形成在所述衬底上的薄膜晶体管；
形成在所述薄膜晶体管上并且与所述薄膜晶体管电连接的像素电极，所述像素电极包括导电金属层和形成在所述导电金属层上的保护层；以及
依次形成在所述像素电极上的空穴传输层、有机发光层、电子传输层和阴极。
优选的是，所述导电金属层为铝层或者银层。
优选的是，所述保护层为钼层。
优选的是，有机发光二极管显示器还包括形成在所述像素电极上的缓冲层，所述空穴传输层形成在所述缓冲层上。
优选的是，所述缓冲层为三氧化钼层、五氧化二钒层、三氧化钨层和氧化镍层中的一种。
优选的是，有机发光二极管显示器还包括形成在所述阴极上的覆盖层。
根据本发明的另一个方面，提供了一种有机发光二极管显示器的制造方法，其包括：
提供衬底；
在所述衬底上形成薄膜晶体管；
在所述薄膜晶体管上形成像素电极，使所述像素电极与所述薄膜晶体管电连接，并使所述像素电极包括导电金属层和形成在所述导电金属层上的保护层；
在所述像素电极上依次形成空穴传输层、有机发光层、电子传输层和阴极。
优选的是，所述导电金属层为铝层或者银层；所述保护层为钼层。
优选的是，在形成所述空穴传输层之前，上述制造方法还包括：在所述像素电极上形成缓冲层，并使所述缓冲层为三氧化钼层、五氧化二钒层、三氧化钨层和氧化镍层中的一种。
优选的是，上述制造方法还包括：在所述阴极上形成覆盖层。
与现有技术相比，上述方案中的一个或多个实施例可以具有如下优点或有益效果：
应用本发明提供的有机发光二极管显示器，像素电极由依次形成在薄膜晶体管上的导电金属层和保护层构成。相比于现有技术中通过溅射工艺形成的ITO透明电极，本发明的像素电极的价格低廉，大大降低了显示器的生产成本。另外，像素电极通过电镀工艺形成，相比于复杂的溅射工艺，大大简化了有机发光二极管显示器的制造工艺。
本发明的其它特征和优点将在随后的说明书中阐述，并且部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例共同用于解释本发明，并不构成对本发明的限制。在附图中：
图1示出了本发明实施例有机发光二极管显示器的结构示意图；
图2示出了本发明实施例用于制造有机发光二极管显示器的一种流程示意图；以及
图3示出了本发明实施例用于制造有机发光二极管显示器的另一种流程示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
本发明所要解决的技术问题是：现有技术中的有机发光二极管显示器的像素电极为价格非常昂贵的ITO透明电极，这增加了有机发光二极管显示器的总体制造成本。为了解决上述技术问题，本发明实施例提供了一种低成本的有机发光二极管显示器。
如图1所示，是本发明实施例的有机发光二极管显示器的结构示意图。本实施例的有机发光二极管显示器主要包括衬底(附图中未示出)、薄膜晶体管(TFT,Thin Film Transistor)1、像素电极2、空穴传输层(HTL,Hole Transport Layer)4、有机发光层(EML,Emitting Material Layer)5、电子传输层(ETL,Electron Transport Layer)6和半透明的阴极(Semitransparent Cathode)7。
具体地，薄膜晶体管1形成在衬底上。像素电极2形成在薄膜晶体管1上，并且与薄膜晶体管1的源极/漏极电连接。空穴传输层4形成在像素电极2上。有机发光层5形成在空穴传输层4上。电子传输层6形成在有机发光层5上。呈半透明的阴极7形成在电子传输层6上。特别地，作为有机发光二极管显示器的阳极(Anode)，本实施例的像素电极2为由导电金属层21和保护层22构成的复合电极。其中导电金属层21形成在位于薄膜晶体管1上的钝化层(附图中未示出)上，并且通过开设在钝化层上的过孔与薄膜晶体管1的源极/漏极电连接。一般地，在钝化层上镀一层具有导电能力的金属层，以形成导电金属层21。形成在导电金属层21上的保护层22能够有效减缓导电金属层21的氧化过程。
可以看出，本实施例的有机发光二极管显示器为顶发射型显示器。有机发光层5发出的光经像素电极2的反射后，穿过半透明的阴极7发射出去。从阴极7发射出去的光线的方向为如图1中所示的箭头的指向。这里，由像素电极2(即阳极)与半透明的阴极7形成微腔结构，从而可以通过微腔效应提高光的色饱和度。顶发射型结构提高了有机发光二极管显示器的开口率。
在本实施例中，像素电极2由依次形成在薄膜晶体管1上的导电金属层21和保护层22构成。相比于现有技术中通过溅射工艺形成的ITO透明电极，本实施例的像素电极2 的价格低廉，大大降低了显示器的生产成本。另外，本实施例的像素电极2通过电镀工艺形成，相比于复杂的溅射工艺，大大简化了有机发光二极管显示器的制造工艺。
在本发明一优选的实施例中，导电金属层21为铝(Al)层或者银(Ag)层。
在本发明一优选的实施例中，保护层22为钼(Mo)层。钼层能够有效减缓铝层或者银层的氧化过程，有利于保持导电金属层21的导电能力。
在本发明一优选的实施例中，有机发光二极管显示器还包括形成在像素电极2和空穴传输层4之间的缓冲层(Buffer Layer)3。也就是说，缓冲层3形成在像素电极2上。空穴传输层4形成在缓冲层3上。特别地，缓冲层3优选为透明导电金属氧化物(TCO,Transparent Conducting Oxides)层，例如三氧化钼(MoO3)层、五氧化二钒(V2O5)层、三氧化钨(WO3)层、氧化镍(NiO)层等。
在本实施例中，加入缓冲层3对上述像素电极2(即阳极)结构进行修饰，提高了空穴的注入能力。缓冲层3的作用是防止在电极沉积过程中引起对有机层的破坏反应，同时通过降低电荷从电极注入到有机层的势垒来提高电荷传输效率。
为了使显示器出射面的透射率最佳，本发明优选实施例的有机发光二极管显示器还包括形成在半透明的阴极7上的覆盖层(Capping Layer)8。覆盖层8优选为羟基喹啉铝(Alq)层或者氧化镁(MgO)层。在本实施例中，覆盖层8作为折射率匹配层。通过选择不同材料和沉积厚度的折射率匹配层，可以大大提高显示器的出光率。此外，覆盖层8还优选为散射层，散射层同样能够达到提高显示器出光率的目的。
相应地，本发明实施例还提供了一种用于制造上述有机发光二极管显示器的方法。
如图2所示，是本发明实施例用于制造有机发光二极管显示器的方法的流程示意图。本实施例所述的制造方法，主要包括步骤101至步骤104。
在步骤101中，提供衬底。
在步骤102中，在衬底上形成薄膜晶体管1。在本步骤中，薄膜晶体管1可以是底栅型薄膜晶体管1，也可以是顶栅型薄膜晶体管1。由于薄膜晶体管1的形成过程为本领域的常规技术手段，因此在本文中不再进行展开说明。
在步骤103中，在薄膜晶体管1上形成像素电极2，使像素电极2与薄膜晶体管1电连接，并使像素电极2包括导电金属层21和形成在导电金属层21上的保护层22。在本步骤中，导电金属层21和保护层22均通过电镀工艺形成。具体地，在薄膜晶体管1上形成具有过孔的钝化层后，通过电镀工艺在钝化层上依次形成导电金属层21和保护层22。导电金属层21通过上述过孔与薄膜晶体管1的源极/漏极电连接。一般地，在钝化层上镀一层具有导电能力的金属层，以形成导电金属层21。在导电金属层21上形成保护层22， 以有效减缓导电金属层21的氧化过程。
在步骤104中，在像素电极2上依次形成空穴传输层4、有机发光层5、电子传输层6和阴极7。
可以看出，利用本实施例制造的有机发光二极管显示器为顶发射型显示器。有机发光层5发出的光经像素电极2的反射后，穿过半透明的阴极7发射出去。这里，由像素电极2(即阳极)与半透明的阴极7形成微腔结构，从而可以通过微腔效应提高光的色饱和度。顶发射型结构提高了有机发光二极管显示器的开口率。
在本实施例中，像素电极2由依次形成在薄膜晶体管1上的导电金属层21和保护层22构成。相比于现有技术中通过溅射工艺形成的ITO透明电极，利用本实施例形成的像素电极2的价格低廉，大大降低了显示器的生产成本。另外，利用电镀工艺形成像素电极2，相比于复杂的溅射工艺，大大简化了有机发光二极管显示器的制造工艺。
进一步地，在步骤103中，在钝化层上电镀形成铝层或者银层，以作为导电金属层21。在导电金属层21上电镀形成钼层，以作为保护层22。钼层能够有效减缓铝层或者银层的氧化过程，有利于保持导电金属层21的导电能力。
在本发明一优选的实施例中，参照图3，在步骤103和步骤104之间添加步骤105。在步骤105中，在像素电极2上形成缓冲层3。特别地，缓冲层3优选为透明导电金属氧化物层，例如三氧化钼层、五氧化二钒层、三氧化钨层和氧化镍层等。
在本实施例中，加入缓冲层3对上述像素电极2(即阳极)结构进行修饰，提高了空穴的注入能力。缓冲层3的作用是防止在电极沉积过程中引起对有机层的破坏反应，同时通过降低电荷从电极注入到有机层的势垒来提高电荷传输效率。
仍参照图3，为了使显示器出射面的透射率最佳，本发明优选实施例还包括步骤106。在步骤106中，在阴极7上形成覆盖层8。覆盖层8优选为羟基喹啉铝(Alq)层或者氧化镁(MgO)层。在本实施例中，覆盖层8作为折射率匹配层。通过选择不同材料和沉积厚度的折射率匹配层，可以大大提高显示器的出光率。此外，覆盖层8还优选为散射层，散射层同样能够达到提高显示器出光率的目的。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (18)

  1. 一种有机发光二极管显示器，包括：
    衬底；
    形成在所述衬底上的薄膜晶体管；
    形成在所述薄膜晶体管上并且与所述薄膜晶体管电连接的像素电极，所述像素电极包括导电金属层和形成在所述导电金属层上的保护层；以及
    依次形成在所述像素电极上的空穴传输层、有机发光层、电子传输层和阴极。
  2. 根据权利要求1所述的有机发光二极管显示器，其中，还包括形成在所述像素电极上的缓冲层，所述空穴传输层形成在所述缓冲层上。
  3. 根据权利要求2所述的有机发光二极管显示器，其中，所述缓冲层为三氧化钼层、五氧化二钒层、三氧化钨层和氧化镍层中的一种。
  4. 根据权利要求3所述的有机发光二极管显示器，其中，还包括形成在所述阴极上的覆盖层。
  5. 根据权利要求1所述的有机发光二极管显示器，其中，所述导电金属层为铝层或者银层。
  6. 根据权利要求5所述的有机发光二极管显示器，其中，还包括形成在所述像素电极上的缓冲层，所述空穴传输层形成在所述缓冲层上。
  7. 根据权利要求6所述的有机发光二极管显示器，其中，所述缓冲层为三氧化钼层、五氧化二钒层、三氧化钨层和氧化镍层中的一种。
  8. 根据权利要求7所述的有机发光二极管显示器，其中，还包括形成在所述阴极上的覆盖层。
  9. 根据权利要求5所述的有机发光二极管显示器，其中，所述保护层为钼层。
  10. 根据权利要求9所述的有机发光二极管显示器，其中，还包括形成在所述像素电极上的缓冲层，所述空穴传输层形成在所述缓冲层上。
  11. 根据权利要求10所述的有机发光二极管显示器，其中，所述缓冲层为三氧化钼层、五氧化二钒层、三氧化钨层和氧化镍层中的一种。
  12. 根据权利要求11所述的有机发光二极管显示器，其中，还包括形成在所述阴极上的覆盖层。
  13. 一种有机发光二极管显示器的制造方法，包括：
    提供衬底；
    在所述衬底上形成薄膜晶体管；
    在所述薄膜晶体管上形成像素电极，使所述像素电极与所述薄膜晶体管电连接，并使所述像素电极包括导电金属层和形成在所述导电金属层上的保护层；
    在所述像素电极上依次形成空穴传输层、有机发光层、电子传输层和阴极。
  14. 根据权利要求13所述的方法，其中，在形成所述空穴传输层之前，所述方法还包括：在所述像素电极上形成缓冲层，并使所述缓冲层为三氧化钼层、五氧化二钒层、三氧化钨层和氧化镍层中的一种。
  15. 根据权利要求14所述的方法，其中，还包括：在所述阴极上形成覆盖层。
  16. 根据权利要求13所述的方法，其中，所述导电金属层为铝层或者银层；所述保护层为钼层。
  17. 根据权利要求16所述的方法，其中，在形成所述空穴传输层之前，所述方法还包括：在所述像素电极上形成缓冲层，并使所述缓冲层为三氧化钼层、五氧化二钒层、三氧化钨层和氧化镍层中的一种。
  18. 根据权利要求17所述的方法，其中，还包括：在所述阴极上形成覆盖层。
PCT/CN2015/084328 2015-07-01 2015-07-17 有机发光二极管显示器及其制造方法 Ceased WO2017000329A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/786,054 US20170155076A1 (en) 2015-07-01 2015-07-17 Oled display device and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510376872.2 2015-07-01
CN201510376872.2A CN104979285A (zh) 2015-07-01 2015-07-01 有机发光二极管显示器及其制造方法

Publications (1)

Publication Number Publication Date
WO2017000329A1 true WO2017000329A1 (zh) 2017-01-05

Family

ID=54275669

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2015/084328 Ceased WO2017000329A1 (zh) 2015-07-01 2015-07-17 有机发光二极管显示器及其制造方法

Country Status (3)

Country Link
US (1) US20170155076A1 (zh)
CN (1) CN104979285A (zh)
WO (1) WO2017000329A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106449714B (zh) * 2016-11-09 2019-12-17 上海天马有机发光显示技术有限公司 一种有机发光显示面板以及制作方法
CN109411627B (zh) * 2018-10-30 2020-11-24 固安翌光科技有限公司 一种有机发光二极管
CN117550814B (zh) * 2023-10-26 2026-01-30 西安近代化学研究所 一种负载银纳米颗粒ito电极的制备方法及其应用
CN119136593A (zh) * 2024-07-29 2024-12-13 惠科股份有限公司 Oled显示面板及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6215077B1 (en) * 1997-03-28 2001-04-10 Fuji Electric Co., Ltd. Thin-film laminate type conductor
CN1592527A (zh) * 2003-08-05 2005-03-09 Lg电子株式会社 有机电致发光器件
CN101904220A (zh) * 2008-09-19 2010-12-01 松下电器产业株式会社 有机电致发光元件及其制造方法
US20120199869A1 (en) * 2011-02-09 2012-08-09 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6841932B2 (en) * 2001-03-08 2005-01-11 Xerox Corporation Display devices with organic-metal mixed layer
US7554260B2 (en) * 2004-07-09 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device provided with a conductive film connection between a wiring component and a metal electrode film
US7687986B2 (en) * 2005-05-27 2010-03-30 Fujifilm Corporation Organic EL device having hole-injection layer doped with metallic oxide
US9166197B2 (en) * 2005-08-29 2015-10-20 The Hong Kong University Of Science And Technology Metallic anode treated by carbon tetrafluoride plasma for organic light emitting device
JP2009259792A (ja) * 2008-03-26 2009-11-05 Fujifilm Corp 有機ｅｌ表示装置
WO2010038356A1 (ja) * 2008-09-30 2010-04-08 パナソニック株式会社 有機ｅｌデバイスおよびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6215077B1 (en) * 1997-03-28 2001-04-10 Fuji Electric Co., Ltd. Thin-film laminate type conductor
CN1592527A (zh) * 2003-08-05 2005-03-09 Lg电子株式会社 有机电致发光器件
CN101904220A (zh) * 2008-09-19 2010-12-01 松下电器产业株式会社 有机电致发光元件及其制造方法
US20120199869A1 (en) * 2011-02-09 2012-08-09 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Device

Also Published As

Publication number Publication date
US20170155076A1 (en) 2017-06-01
CN104979285A (zh) 2015-10-14

Similar Documents

Publication Publication Date Title
CN105720081B (zh) 一种有机发光二极管阵列基板、显示装置和制作方法
US9881985B2 (en) OLED device, AMOLED display device and method for manufacturing same
US8890317B1 (en) Organic light emitting display device and manufacturing method thereof
WO2020192051A1 (zh) 显示面板及其制备方法
WO2018113018A1 (zh) Oled显示面板及其制作方法
CN107170900B (zh) Oled基板及其制备方法、显示装置
CN103855322B (zh) 有机发光显示装置及其制造方法
WO2018045658A1 (zh) Amoled显示装置
CN105789260B (zh) 一种透明显示面板及其制备方法
CN104319351A (zh) Oled阵列基板及其制备方法、显示面板、显示装置
WO2016106946A1 (zh) Coa型woled结构及制作方法
KR102595445B1 (ko) 유기 발광 표시 장치 및 이의 제조 방법
WO2018107532A1 (zh) 双面oled显示器件及其制作方法
WO2017000329A1 (zh) 有机发光二极管显示器及其制造方法
CN104091895A (zh) 有机发光二极管基板及其制作方法、显示装置
KR101352237B1 (ko) 유기전계발광표시장치의 제조방법
CN103915572A (zh) 应用于照明装置的有机发光二极管组件
CN106252525B (zh) Oled器件及制作方法、显示面板以及显示装置
CN110534660A (zh) 一种显示基板及制备方法、显示装置
CN108878673A (zh) 显示基板及其制作方法、显示装置
CN108123053A (zh) 发光器件和显示装置
US8835197B2 (en) Active matrix organic light-emitting diode and manufacturing method thereof
CN102270750A (zh) 有机电致发光器件、显示设备及制备方法
CN109300945B (zh) 阵列基板及制作方法、显示面板
KR20130008754A (ko) 유기 발광 표시 장치 및 이의 제조 방법

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 14786054

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15896859

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15896859

Country of ref document: EP

Kind code of ref document: A1