WO2016206050A1 - Détecteur photoélectrique - Google Patents

Détecteur photoélectrique Download PDF

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Publication number
WO2016206050A1
WO2016206050A1 PCT/CN2015/082360 CN2015082360W WO2016206050A1 WO 2016206050 A1 WO2016206050 A1 WO 2016206050A1 CN 2015082360 W CN2015082360 W CN 2015082360W WO 2016206050 A1 WO2016206050 A1 WO 2016206050A1
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WO
WIPO (PCT)
Prior art keywords
doped layer
layer
metal electrode
photodetector
type
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PCT/CN2015/082360
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English (en)
Chinese (zh)
Inventor
李宝霞
薛海韵
曹彤彤
Original Assignee
华为技术有限公司
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Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to CN201580001263.7A priority Critical patent/CN106688109A/zh
Priority to PCT/CN2015/082360 priority patent/WO2016206050A1/fr
Publication of WO2016206050A1 publication Critical patent/WO2016206050A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to the technical field of detectors, and in particular to a photodetector.
  • Photodetector is used to convert optical signals into electrical signals. It is a device that can convert optical radiation energy into a physical quantity that is easy to measure. It is widely used in optical communication, optical interconnection, optical signal processing and other technical fields, especially Highly integrated photodetectors based on semiconductor materials such as silicon and germanium will be indispensable key components for future ultra-small optical interconnect systems.
  • photodetectors have many structures, including commonly used PN-type structures and PIN-type structures.
  • the technical indicators of photodetectors include response bandwidth, sensitivity, power consumption, photoelectric conversion efficiency, etc.
  • photoelectric conversion efficiency is photoelectric
  • the important performance parameters of the detector are used to describe the efficiency of the conversion of incident photons into electrons. Its high and low directly affect the effective reception of the signal. Therefore, the photoelectric conversion efficiency has become one of the important considerations for various manufacturers in the production of photodetectors.
  • Embodiments of the present invention provide a photodetector for improving photoelectric conversion rate.
  • a first aspect of the present invention provides a photodetector comprising: a substrate, a bulk insulating layer, a first doped layer, a second doped layer, a first metal electrode, a second metal electrode, and a clad insulating layer;
  • the bulk insulating layer is disposed above the substrate, the first doped layer is disposed above the bulk insulating layer, and the second doped layer is disposed over the first doped layer, the second doping
  • the cladding insulating layer is disposed above the layer;
  • One end of the first metal electrode is disposed inside the first doped layer, the other end of the first metal electrode passes through the clad insulating layer and constitutes a first electrode lead; and one end of the second metal electrode is disposed at Inside the second doped layer, the other end of the second metal electrode passes through the clad insulating layer and constitutes a second electrode lead;
  • the second doped layer is outwardly extended with at least one extension body, and the at least one extension body is embedded in the first doped layer, and the at least one extension body and the second doped layer are made of the same material;
  • the second doped layer when the first doped layer is a P-type doped layer, the second doped layer is an N-type doped layer; When the first doped layer is an N-type doped layer, the second doped layer is a P-type doped layer.
  • the first metal electrode As a P-type source, the second metal electrode is an N-type drain.
  • the first metal electrode is a P-type source.
  • the photodetector further includes an intrinsic a region, wherein the intrinsic region is disposed between a contact surface of the first doped layer and the second doped layer.
  • a fourth possible implementation in a state in which the extension of the second doped layer is embedded in the first doped layer, the intrinsic region tends to have a concave shape in the corresponding position of the extension body, the concave shape matching the shape of the extension body.
  • the photodetector provided by the embodiment of the present invention includes a stacked substrate 11, a bulk insulating layer 12, a first doped layer 13, a second doped layer 14, and a clad insulating layer 17, due to the second doping.
  • the layer 14 extends outwardly from the at least one extension 18, and the extension 18 is embedded in the first doped layer 13, wherein the at least one extension 18 and the second doped layer 14 are made of the same material, therefore, at the first A PN junction, that is, a first doping layer 13 is formed at a contact surface of the doped layer 13 and the second doped layer 14 and at a contact face of the extension 18 of the first doped layer 13 and the second doped layer 14
  • the PN junction is formed not only on the lateral contact surface but also on the second doped layer 14 , and the second doped layer 14 forms a PN junction with the first doped layer 13 in the vertical direction through the extension 18, thereby effectively increasing the photoelectricity.
  • the reverse bias voltage is applied to the first metal electrode 15 disposed at one end of the first doped layer 13, and the second metal electrode 16 disposed at the second doped layer 14 to one end.
  • the incident light is incident on the PN junction from the cladding insulating layer 17, and the electrons on the PN junction absorb the incident light.
  • the energy a transition occurs to excite the photo-generated carriers, and the light energy is converted into an electrical signal by the electric field formed by the first metal electrode 15 and the second metal electrode 16.
  • the photoelectric conversion rate is increased by increasing the PN junction area.
  • FIG. 1 is a side elevational view of a photodetector according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of a working principle of a photodetector according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of a working principle of a photodetector according to another embodiment of the present invention.
  • FIG. 4 is a side cross-sectional view of a photodetector of a PIN junction structure according to some embodiments of the present invention.
  • FIG. 5 is a top plan view of a photodetector of a PN junction structure according to some embodiments of the present invention.
  • Embodiments of the present invention provide a photodetector for improving photoelectric conversion rate.
  • the photodetector provided by the embodiment of the invention can be applied to an optical interconnect system, an optical communication system or an optical signal processing system.
  • FIG. 1 is a side view of a photodetector according to an embodiment of the present invention.
  • a photodetector according to some embodiments of the present invention may include:
  • Substrate 11 bulk insulating layer 12, first doped layer 13, second doped layer 14, first metal electrode 15, a second metal electrode 16 and a cladding insulating layer 17;
  • the first insulating layer 12 is disposed above the substrate 11 , and the first doped layer 13 is disposed above the bulk insulating layer 12 , and the second doped layer 14 is disposed above the first doped layer 13 .
  • the cladding insulating layer 17 is disposed above the second doping layer 14;
  • first metal electrode 15 is disposed inside the first doped layer 13, and the other end of the first metal electrode 15 passes through the clad insulating layer 17 and constitutes a first electrode lead;
  • second metal One end of the electrode 16 is disposed inside the second doped layer 14, and the other end of the second metal electrode 16 passes through the clad insulating layer 17 and constitutes a second electrode lead;
  • the second doped layer 14 extends outwardly from the at least one extension 18, the at least one extension 18 is embedded in the first doped layer 13, the at least one extension 18 and the second doping Layer 14 is of the same material;
  • the second doped layer 14 when the first doped layer 13 is a P-type doped layer, the second doped layer 14 is an N-type doped layer; when the first doped layer 13 is an N-type doped layer, The second doping layer 14 is a P-type doped layer.
  • the substrate 11, the bulk insulating layer 12, the first doping layer 13, the second doping layer 14, and the clad insulating layer 17 are stacked design, wherein The second doped layer 14 extends outwardly from the at least one extension 18, the at least one extension 18 is embedded in the first doped layer 13, and the material of the at least one extension 18 is the same as the material of the second doped layer 14.
  • a PN junction is formed at the contact face of the first doped layer 13 and the second doped layer 14, and at the contact face of the first doped layer 13 and the extension 18 of the second doped layer 14, ie
  • the first doped layer 13 and the second doped layer 14 not only form a PN junction on the lateral contact surface, but the second doped layer 14 forms a PN with the first doped layer 13 in the vertical direction by the extension 18
  • the junction effectively increases the effective area of the PN junction in the photodetector, thereby increasing the number of photogenerated carriers generated per unit incident light window area, and therefore, the first metal electrode 15 disposed at the first doping layer 13 at one end Applying a reverse bias voltage and applying a reverse bias to the second metal electrode 16 disposed at one end of the second doped layer 14 After the voltage, the incident light is incident from the cladding insulating layer 17 onto the PN junction in the lateral and vertical directions, and the electrons on the PN junction are excited after absorbing the energy of the incident light, exciting the photo
  • FIG. 2 is a schematic diagram of a working principle of a photodetector according to an embodiment of the present invention
  • 21 is a contact surface between the first doping layer 13 and the second doping layer 14, and a first doping layer.
  • a PN junction formed on a contact surface with the extension 18 of the second doped layer 14 is applied with a reverse bias voltage to the PN junction through the first metal electrode 15 and the second metal electrode 16 during operation of the photodetector, the incident light is from The cladding insulating layer 17 is incident.
  • the incident light is incident on the PN junction, the electrons in the PN junction area undergo a transition after absorbing the energy of the incident light, exciting the photogenerated carriers, and converting them into electrical signals under the action of the electric field.
  • the first doping layer 13 and the second doping layer 14 form a PN junction on the lateral contact surface, and the extension layer 18 of the first doping layer 13 and the second doping layer 14 A PN junction is also formed in the vertical contact surface, thereby increasing the total area of the PN junction as a whole, so that the number of photogenerated carriers generated per unit incident light window area is increased, and the photoelectric conversion efficiency is improved.
  • the width of the PN junction is not significantly increased, so the response speed of the photodetector is Has little effect.
  • higher photoelectric conversion efficiency can be obtained due to lower reverse bias voltage, so it can be applied to scenarios with low power consumption requirements.
  • FIG. 3 is a schematic diagram of the working principle of the photodetector according to another embodiment of the present invention
  • FIG. 3 is a schematic diagram of the working principle of the photodetector provided by the embodiment of the present invention.
  • the incident light changes in a periodic refractive index in the vertical PN junction region, and a light diffraction effect of the grating-like grating can be formed.
  • the traveling direction will be diffracted from the vertical direction to the horizontal direction (as indicated by the direction of the arrow in FIG. 3), which is advantageous for further absorption of incident light, achieving higher absorption efficiency, and further improving the photoelectric conversion efficiency of the photodetector.
  • FIG. 1 to FIG. 3 are descriptions of the photodetector of the PN junction structure.
  • the embodiment of the present invention further provides a photodetector with a PIN junction structure.
  • the photodetector of the PIN junction structure further includes an intrinsic region 19, wherein the intrinsic region 19 is disposed in the first doping Between the contact surface of the impurity layer 13 and the second doping layer 14.
  • the intrinsic region 19 is used to isolate the first doping.
  • Layer 13 and second doped layer 14 are used to isolate the first doping.
  • the intrinsic region 19 tends to have a concave shape in the corresponding position of the extension body 18.
  • the recessed shape matches the shape of the extension 18.
  • the intrinsic region 19 is an undoped region or a region with a low doping concentration, and the material used is close to the intrinsic.
  • the entire intrinsic region is a depletion layer. It can be used to absorb incident light to generate photogenerated carriers.
  • the intrinsic region 19 is isolated between the first doped layer 13 and the second doped layer 14, and the entire intrinsic region 19 is used as a depletion layer. It is used to absorb incident light and generate photocarriers. Therefore, in the photodetector of the PIN junction structure, the contact face of the first doped layer 13 with the intrinsic region 19, the contact face of the second doped layer 14 with the intrinsic region 19, and the entire intrinsic region 19 serve as PIN junctions.
  • the PIN junction replaces the PN junction in the PN junction structure.
  • the working principle of the photodetector of the PIN junction structure is as follows: when the photodetector of the PIN junction structure is in operation, a reverse bias voltage is applied to the PIN junction through the first metal electrode 15 and the second metal electrode 16, and the incident light is from the cladding layer. The insulating layer 17 is incident. When the incident light is incident on the PIN junction, the electrons in the PIN junction area undergo a transition after absorbing the energy of the incident light, exciting the photogenerated carriers, and converting into electrical signals under the action of the electric field.
  • the extension 18 of the second doped layer 14 is embedded in the first doped layer 13 in the photodetector of the PIN junction structure shown in FIG. 4, the intrinsic region 19 is at the corresponding position of the extension 18
  • the first doped layer 13 is inclined to have a concave shape, and therefore, a PIN junction region is also formed in a direction perpendicular to the first doped layer 13, thereby increasing the total area of the PIN junction as a whole, so that the unit incident light window area The number of photogenerated carriers generated is larger, and the photoelectric conversion efficiency is improved.
  • the incident light changes in the periodic refractive index in the vertical PIN junction region, a light diffraction effect of the grating-like grating can be formed, and the traveling direction of the light is diffracted from the vertical direction to the horizontal direction, which is advantageous for further absorption of the incident light, thereby realizing more
  • the high absorption efficiency further enhances the photoelectric conversion efficiency of the photodetector.
  • the second doping layer 14 and the extension body 18 are doped with the same material, and are an integrally formed structure.
  • the substrate 11 is first formed at the bottom, then the bulk insulating layer 12 is formed over the substrate 11, and the first doping is formed over the bulk insulating layer 12.
  • the first doped layer 13 is completed, at least one region is etched in the first doped layer 13, and then the second doped layer is formed on the surface of the first doped layer 13 by selective growth. 14 and forming an extension 18 in this region.
  • the substrate 11 is first formed at the bottom, followed by lining A bulk insulating layer 12 is formed on the bottom of the bottom 11, and then a layer of semiconductor silicon is formed over the bulk insulating layer 12, and then boron is doped into the semiconductor silicon to form a P-type doped layer, and then, by etching, At least one region is etched on the P-type doped layer, and then a layer of semiconductor silicon is formed over the P-type doped layer and in the region, and the semiconductor silicon is doped with phosphorus to form an N-type doped layer.
  • An extension 18 of the N-type doped layer that expands outward is obtained in the etched region.
  • the substrate 11 in the production of the photodetector, is first formed at the bottom, and then the bulk insulating layer 12 is formed over the substrate 11, and the first doped layer 13 and the second doped layer
  • the hybrid layer 14 and the extended extension 18 can be formed by defining different lithographic regions, then ion implantation separately in the respective lithographic regions, and activation by rapid high temperature annealing.
  • the extension 18 can be any shape of geometry, such as a cylinder, a vertebral body, a pedestal, a cuboid, and the like. Therefore, when the photodetector is produced, if the extension 18 of the second doped layer 14 is formed by etching the region in the first doped layer 13, the shape of the etched region is correspondingly the pillar. Body, vertebral body, table body, cuboid, etc. Similarly, if a different lithographic area is defined first, the lithographic area where the extension 18 is located is also a cylinder, a vertebral body, a pedestal, a rectangular parallelepiped or the like.
  • the first metal electrode 15 in the embodiment of the present invention may be a P-type source or an N-type drain.
  • the second metal electrode 16 may be an N-type drain or a P-type source, and specifically includes the following two cases. :
  • the first metal electrode 15 is a P-type source
  • the second metal electrode 16 is an N-type Drain
  • the first metal electrode 15 is an N-type drain
  • the second metal electrode 16 is a P-type source. pole.
  • the second doped layer 14 in the photodetector has a comb shape.
  • the material of the first doping layer 13 is a semiconductor material
  • the material of the second doping layer 14 is a semiconductor material.
  • the semiconductor material may be a silicon, germanium or tri-five compound material.
  • FIG. 5 is a top view of a photodetector of a PN junction structure according to some embodiments of the present invention; in FIG. 5, an incident window of a photodetector of a PN junction structure according to an embodiment of the present invention is A circular structure, in FIG. 5, the bottom of the photodetector of the PN junction structure is an N-type doped layer, the top is a P-type doped layer, and a ring-shaped N-type drain is formed outside the N-type doped layer, at P An annular P-type source is formed outside the doped layer, and an N-type drain leads the electrode lead outward. Similarly, the P-type drain leads the electrode lead outward.
  • FIG. 5 is used to indicate the P-type doped layer flared extension 18, which is embedded in the N-type doped layer, and in FIG. 5, 12 extensions 18 are taken as an example, incident. After the light is incident from the circular incident window, the electrons at the PN junction are converted into electrical signals after absorbing the energy of the incident light, and then output electrical signals from the P-type source and the N-type drain.
  • FIG. 5 only shows an embodiment of the photodetector of the PN junction structure.
  • the light incident window of the photodetector of the embodiment of the present invention may have other shapes in addition to the circular structure shown in FIG. 5.
  • the projected shape of the top view of the extension 18 changes according to the actual shape of the extension 18.
  • the projection of the top view is circular as shown in FIG.
  • the projection shape of the plan view is a triangle, which is not limited herein.
  • the photodetector of the PN junction structure or the photodetector of the PIN junction structure provided by the above embodiments can be applied in an optical interconnection system, and the photodetector passes through a P-type source and an N-type drain and light. Connected to the light receiving module in the system, the photodetector is also connected to an external circuit through a P-type source and an N-type drain, and a reverse bias voltage is applied to the PN junction or the PIN junction in the photodetector through an external circuit, and photodetection is performed.
  • the device starts to work, the incident light is incident from the insulating layer, and when the incident light is incident on the PN junction or the PIN junction, the photo-generated carriers are excited, and an electric signal is formed under the electric field, and the P-type source and the N-type drain are passed.
  • Output to the light receiving module the light receiving module completes the subsequent operation of the electrical signal.
  • the photodetector provided by the embodiment of the present invention includes a stacked substrate 11, a bulk insulating layer 12, a first doped layer 13, a second doped layer 14, and a clad insulating layer 17, due to the second doping
  • the impurity layer 14 extends outwardly from the at least one extension body 18, and the extension body 18 is embedded in the first doping layer 13, wherein the at least one extension body 18 and the second doping layer 14 are made of the same material, therefore,
  • a PN junction that is, a first doping layer 13 is formed at a contact surface of a doped layer 13 and a second doped layer 14 and at a contact surface of the extension 18 of the first doped layer 13 and the second doped layer 14
  • the second doped layer 14 not only in the lateral direction a PN junction is formed on the contact surface, and the second doped layer 14 forms a PN junction with the first doped layer 13 in the vertical direction through the extension 18, thereby effectively increasing the effective area of the PN junction in the photodet

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

L'invention porte sur un détecteur photoélectrique qui comprend un substrat (11) ; une couche d'isolation de corps (12) est agencée au-dessus du substrat (11), une première couche de dopage (13) est agencée au-dessus de la couche d'isolation de corps (12), une seconde couche de dopage (14) est agencée au-dessus de la première couche de dopage (13), et une couche d'isolation de gaine (17) est agencée au-dessus de la seconde couche de dopage (14) ; une extrémité d'une première électrode métallique (15) est disposée à l'intérieur de la première couche de dopage (13), et l'autre extrémité de la première électrode métallique (15) passe à travers la couche d'isolation de gaine (17) et constitue une première patte d'électrode ; une extrémité d'une seconde électrode métallique (16) est disposée à l'intérieur de la seconde couche de dopage (14), et l'autre extrémité de la seconde électrode métallique (16) passe à travers la couche d'isolation de gaine (17) et constitue une seconde patte d'électrode ; et la seconde couche de dopage (14) s'étend vers l'extérieur par au moins un corps d'extension (18), le ou les corps d'extension (18) sont noyés dans la première couche de dopage (13), et le ou les corps d'extension (18) et la seconde couche de dopage (14) sont du même matériau, la seconde couche de dopage (14) étant une couche de dopage du type N quand la première couche de dopage (13) est une couche de dopage du type P, et la seconde couche de dopage (14) étant une couche de dopage du type P quand la première couche de dopage (13) est une couche de dopage du type N. Le détecteur photoélectrique améliore le taux de conversion photoélectrique.
PCT/CN2015/082360 2015-06-25 2015-06-25 Détecteur photoélectrique WO2016206050A1 (fr)

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CN201580001263.7A CN106688109A (zh) 2015-06-25 2015-06-25 一种光电探测器
PCT/CN2015/082360 WO2016206050A1 (fr) 2015-06-25 2015-06-25 Détecteur photoélectrique

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100200065A1 (en) * 2009-02-12 2010-08-12 Kyu Hyun Choi Photovoltaic Cell and Fabrication Method Thereof
US20100269895A1 (en) * 2009-04-27 2010-10-28 Katherine Louise Smith Multijunction photovoltaic structure with three-dimensional subcell
CN102569480A (zh) * 2012-01-01 2012-07-11 浙江大学 一种纳米结构的氧化亚铜基pin结太阳能电池及其制备方法
CN103367513A (zh) * 2013-07-11 2013-10-23 湖南师范大学 一种多晶硅薄膜太阳能电池及其制备方法
CN103928541A (zh) * 2014-04-29 2014-07-16 集美大学 一种具有立体微结构阵列的太阳能电池
CN104425719A (zh) * 2013-08-28 2015-03-18 台湾积体电路制造股份有限公司 具有有机光电二极管的图像传感器及其制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004055646A (ja) * 2002-07-17 2004-02-19 Sumitomo Electric Ind Ltd 発光ダイオード素子のｐ側電極構造
CN101714591B (zh) * 2009-11-10 2012-03-14 大连理工大学 一种硅光电二极管的制作方法
KR20120095790A (ko) * 2011-02-21 2012-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100200065A1 (en) * 2009-02-12 2010-08-12 Kyu Hyun Choi Photovoltaic Cell and Fabrication Method Thereof
US20100269895A1 (en) * 2009-04-27 2010-10-28 Katherine Louise Smith Multijunction photovoltaic structure with three-dimensional subcell
CN102569480A (zh) * 2012-01-01 2012-07-11 浙江大学 一种纳米结构的氧化亚铜基pin结太阳能电池及其制备方法
CN103367513A (zh) * 2013-07-11 2013-10-23 湖南师范大学 一种多晶硅薄膜太阳能电池及其制备方法
CN104425719A (zh) * 2013-08-28 2015-03-18 台湾积体电路制造股份有限公司 具有有机光电二极管的图像传感器及其制造方法
CN103928541A (zh) * 2014-04-29 2014-07-16 集美大学 一种具有立体微结构阵列的太阳能电池

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