WO2016204594A1 - Élément électroluminescent semiconducteur - Google Patents

Élément électroluminescent semiconducteur Download PDF

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Publication number
WO2016204594A1
WO2016204594A1 PCT/KR2016/006547 KR2016006547W WO2016204594A1 WO 2016204594 A1 WO2016204594 A1 WO 2016204594A1 KR 2016006547 W KR2016006547 W KR 2016006547W WO 2016204594 A1 WO2016204594 A1 WO 2016204594A1
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Prior art keywords
layer
electrode
light emitting
semiconductor
emitting device
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PCT/KR2016/006547
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English (en)
Korean (ko)
Inventor
진근모
전수근
김태현
박은현
최일균
백승호
Original Assignee
주식회사 세미콘라이트
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Priority claimed from KR1020150086790A external-priority patent/KR101678063B1/ko
Priority claimed from KR1020150087506A external-priority patent/KR101700306B1/ko
Priority claimed from KR1020150087505A external-priority patent/KR101689344B1/ko
Priority claimed from KR1020150088357A external-priority patent/KR20170000019A/ko
Priority claimed from KR1020150089167A external-priority patent/KR101697960B1/ko
Priority claimed from KR1020150089876A external-priority patent/KR101753750B1/ko
Application filed by 주식회사 세미콘라이트 filed Critical 주식회사 세미콘라이트
Publication of WO2016204594A1 publication Critical patent/WO2016204594A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Definitions

  • the present disclosure relates to a semiconductor light emitting device as a whole, and more particularly, to a semiconductor light emitting device having an electrode structure with improved bonding strength during bonding.
  • the semiconductor light emitting device refers to a semiconductor optical device that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting device.
  • the group III nitride semiconductor consists of a compound of Al (x) Ga (y) In (1-x-y) N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1).
  • GaAs type semiconductor light emitting elements used for red light emission, etc. are mentioned.
  • FIG. 1 is a view showing an example of a semiconductor light emitting device disclosed in US Patent No. 7,262,436.
  • the semiconductor light emitting device may include a substrate 100, an n-type semiconductor layer 300 grown on the substrate 100, an active layer 400 grown on the n-type semiconductor layer 300, and p grown on the active layer 400.
  • a chip having such a structure that is, a chip in which both the electrodes 901, 902, 903 and the electrode 800 are formed on one side of the substrate 100, and the electrodes 901, 902, 903 function as a reflective film is called a flip chip.
  • the electrodes 901, 902 and 903 may include a high reflectance electrode 901 (eg Ag), an electrode 903 (eg Au) for bonding, and an electrode 902 which prevents diffusion between the electrode 901 material and the electrode 903 material; Example: Ni).
  • This metal reflective film structure has a high reflectance and has an advantage in current spreading, but has a disadvantage of light absorption by metal.
  • FIG. 2 is a view showing an example of a semiconductor light emitting device disclosed in Japanese Laid-Open Patent Publication No. 2006-20913.
  • the semiconductor light emitting device includes a substrate 100, a buffer layer 200 grown on the substrate 100, an n-type semiconductor layer 300 grown on the buffer layer 200, and an active layer 400 grown on the n-type semiconductor layer 300.
  • the bonding pad 700 and the n-side bonding pad 800 are formed on the etched and exposed n-type semiconductor layer 300.
  • the distributed Bragg reflector 900 DBR: Distributed Bragg Reflector
  • the metal reflecting film 904 are provided on the transparent conductive film 600. According to this configuration, the light absorption by the metal reflective film 904 is reduced, but there is a disadvantage in that current spreading is not smoother than using the electrodes 901, 902, 903.
  • the group III nitride semiconductor light emitting device includes a substrate 10 (eg, a sapphire substrate), a buffer layer 20 grown on the substrate 10, an n-type group III nitride semiconductor layer 30 grown on the buffer layer 20, and an n-type 3 Current diffusion conductive film formed on the active layer 40 grown on the group nitride semiconductor layer 30, the p-type group III nitride semiconductor layer 50 grown on the active layer 40, and the p-type group III nitride semiconductor layer 50.
  • a substrate 10 eg, a sapphire substrate
  • a buffer layer 20 grown on the substrate 10
  • an n-type group III nitride semiconductor layer 30 grown on the buffer layer 20
  • an n-type 3 Current diffusion conductive film formed on the active layer 40 grown on the group nitride semiconductor layer 30, the p-type group III nitride semiconductor layer 50 grown on the active layer 40, and the p-type group III nitride semiconductor layer 50 is a substrate 10
  • n-side bonding pad 70 formed on the current diffusion conductive film 60, the p-side bonding pad 70 formed on the current diffusion conductive film 60, the n-type III-nitride semiconductor layer exposed by the mesa-etched p-type III-nitride semiconductor layer 50 and the active layer 40 And an n-side bonding pad 80 and a passivation layer 90 formed over the 30.
  • FIG. 43 is a view showing an example of crack generation during separation of a flip chip having an insulating reflective film.
  • the insulating reflecting film as a reflecting film, light absorption is reduced compared to the flip chip having the metal reflecting film.
  • the growth substrate 100 or the plurality of semiconductor layers 300, 400, and 500 have crystallinity and are well cut by the scribing and breaking process, whereas the insulating reflective film mainly includes a dielectric material, and the insulating reflective film of the edge of the chip separation process is mainly included.
  • Cracks CR1 are often generated.
  • the insulating reflective film corresponding to the cutting lines SCL1 and SCL2 in the scribing and / or braking process is impacted during laser scribing. It is necessary to further suppress the occurrence of crack CR1.
  • the problem due to the overlap of the impact at the intersection may be a problem in the manufacturing process of the general semiconductor light emitting device such as the flip chip as well as the lateral chip shown in FIG. 42 or other vertical chips.
  • the breaking or scribing impact is increased at the intersections of the cutting lines in the breaking process for separating the lateral chips shown in FIG. 42 into individual chips, cracks or damage may occur in the protective film 90 or the like. This is larger and this may cause problems such as peeling of the p-side bonding pad 70.
  • FIG. 54 is a view for explaining an example of dielectric breakdown between electrodes by electromigration, in which a semiconductor light emitting element is bonded to a conductive pattern 8 of the substrate 6 by solder bumps 16, as shown in FIG. 54A. Can be.
  • an electro migration or an electrochemical migration phenomenon may occur on the solder bumps 16.
  • the electro (chemical) migration phenomenon there may be mentioned a conductive anodic filament phenomenon (see FIG. 54B) and a dendritic growth phenomenon (see FIG. 54C).
  • the metal of the anode is ionized and migrated by the applied electric field to form filaments from the anode to the cathode, which eventually leads to dielectric breakdown.
  • the metal ionized at the anode moves along the electric field toward the cathode and is reduced on the cathode to form a dendritic filament.
  • the filament thus formed grows up to the anode and leads to dielectric breakdown.
  • the solder bumps 16 are alloys of two or more materials.
  • the solder bumps 16 may include Sn, Pb, Ag, Cu, or the like depending on the solder type. There is a problem that these atoms are moved by the electro (caical) migration, and the volts are generated between the two electrodes 3 and 5.
  • FIG. 79 is a view showing an example of the occurrence of cracks when the flip chip having the non-conductive reflecting film is separated, wherein the non-conductive reflecting film R is adopted as the reflecting film, so that light absorption is higher than that of the flip chip having the metal reflecting film. Decreased.
  • the growth substrate 100 or the plurality of semiconductor layers 300, 400, and 500 have crystallinity and are well cut by the scribing and breaking process, whereas as shown in FIG. 4, the non-conductive reflective film R mainly includes a dielectric material. Therefore, during the separation process of the chip, cracks CR21 are generated in the non-conductive reflective film R at the edge.
  • a defect may occur in which such a crack CR21 propagates inside the semiconductor light emitting element, that is, toward the light emitting surface side. This causes a problem in appearance and thereby lowers the yield. In particular, when the crack CR21 propagates to the electrodes 80 and 70, the electrodes 80 and 70 may come off.
  • a non-conductive reflective film which is formed between the active layer and reflects light passing through the non-conductive reflective film, and is provided between the bonding layer and the light reflective layer to prevent the light reflective material from penetrating into the bonding layer.
  • a semiconductor light emitting device comprising: an electrode having a diffusion barrier layer comprising at least one of Ta, Mg, and Fe.
  • a semiconductor light emitting device formed by cutting a wafer on which a plurality of semiconductor light emitting chips are formed for each semiconductor light emitting chip, a first light having a first conductivity A semiconductor layer, a second semiconductor layer having a second conductivity different from the first conductivity, an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light through recombination of electrons and holes, A plurality of semiconductor layers grown using; An upper structure having at least one electrode electrically connected to the plurality of semiconductor layers, and an upper layer exposing the at least one electrode and covering the plurality of semiconductor layers; First and second cut surfaces formed when the wafer is cut for each semiconductor light emitting chip; And a cutout portion formed by removing at least a portion of the upper structure, the plurality of semiconductor layers, and the growth substrate from the corner where the first and second cutting surfaces meet.
  • a method of manufacturing a semiconductor light emitting device is formed by cutting a wafer on which a plurality of semiconductor light emitting chips are formed for each semiconductor light emitting chip.
  • a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light through recombination of electrons and holes Forming a plurality of semiconductor layers comprising; Forming an upper structure having at least one electrode electrically connected to the plurality of semiconductor layers, and an upper layer exposing the at least one electrode and covering the plurality of semiconductor layers; Forming grooves by removing at least a portion of the upper structure, the plurality of semiconductor layers, and the growth substrate at each intersection of cutting lines for cutting the wafer for each semiconductor light emitting chip, so as to prevent overlapping impacts during cutting; And cutting the wafer for each semiconductor light emitting chip along the cutting lines.
  • a first semiconductor layer having a first conductivity, a second semiconductor having a second conductivity different from the first conductivity, and the like A plurality of semiconductor layers having a layer and an active layer interposed between the first semiconductor layer and the second semiconductor layer to generate light by recombination of electrons and holes; An insulating reflective film reflecting light from the active layer; A first electrode provided on an opposite side of the plurality of semiconductor layers based on the insulating reflective film, and configured to supply one of electrons and holes to the first semiconductor layer; And a second electrode provided on an opposite side of the plurality of semiconductor layers based on the insulating reflective film, and supplying the other one of electrons and holes to the second semiconductor layer, wherein the insulating reflective film is disposed between the first electrode and the second electrode.
  • a semiconductor light emitting device characterized in that a long groove is formed in the groove.
  • a semiconductor light emitting device which extends between an electrode and a second electrode.
  • a first semiconductor layer having a first conductivity and a second semiconductor layer having a second conductivity different from the first conductivity And a plurality of semiconductor layers interposed between the first semiconductor layer and the second semiconductor layer, the active layers generating light through recombination of electrons and holes, and formed on a growth substrate, wherein the plurality of semiconductors have etched or cut side surfaces.
  • a non-conductive reflecting film formed over the plurality of semiconductor layers to reflect light generated in the active layer toward the growth substrate;
  • a first electrode formed on the nonconductive reflecting film and supplying one of electrons and holes to the first semiconductor layer;
  • a second electrode formed on the non-conductive reflective film so as to face the first electrode and supplying the other one of electrons and holes to the second semiconductor layer.
  • the first electrode and the first electrode may be viewed in a top view.
  • a distance between the two electrodes and the side surfaces of the plurality of semiconductor layers is 50 ⁇ m or more, so that cracks generated in the non-conductive reflective film are suppressed from propagating to the first electrode and the second electrode.
  • a first semiconductor layer having a first conductivity and a second semiconductor layer having a second conductivity different from the first conductivity And a plurality of semiconductor layers having an active layer interposed between the first semiconductor layer and the second semiconductor layer to generate light by recombination of electrons and holes, wherein the plurality of semiconductor layers are exposed to expose the first semiconductor layer from the second semiconductor layer side.
  • FIG. 1 is a view showing an example of a semiconductor light emitting device disclosed in US Patent No. 7,262,436;
  • FIG. 2 is a view showing an example of a semiconductor light emitting device disclosed in Japanese Patent Laid-Open No. 2006-20913;
  • FIG. 3 is a view illustrating an example of a semiconductor light emitting device and a method of manufacturing the same according to the present disclosure
  • FIG. 4 is a view for explaining an example of a method of manufacturing a semiconductor light emitting device described in FIG.
  • FIG. 5 is an enlarged view of a portion R1 of an opening formed by a dry etching process
  • FIG. 6 is a view illustrating an upper surface of an electrode on which a wet etching process is performed
  • FIG. 8 is a view for explaining another example of a semiconductor light emitting device and a method of manufacturing the same according to the present disclosure
  • FIG. 9 is a view for explaining another example of a semiconductor light emitting device and a method of manufacturing the same according to the present disclosure.
  • FIG. 10 is a view for explaining an example of a cross section taken along a line A-A in FIG. 9;
  • FIG. 11 is a view for explaining another example of a semiconductor light emitting device and a method of manufacturing the same according to the present disclosure
  • FIG. 13 is a view showing still another example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 14 is a cross-sectional view taken along the line A-A of FIG.
  • 15 is a cross-sectional view taken along the line B-B of FIG. 13;
  • 16 is a view illustrating a state in which a p-side electrode, an n-side electrode, and a non-conductive reflective film are removed from the semiconductor light emitting device of FIG. 13;
  • FIG 17 illustrates another example of the semiconductor light emitting device according to the present disclosure.
  • 19 is a cross-sectional view taken along the line E-E of FIG. 17;
  • 20 is a view showing a state before two semiconductor light emitting devices are separated into independent semiconductor light emitting devices during a semiconductor light emitting device manufacturing process
  • 21 is a view showing a state in which two semiconductor light emitting devices are separated into independent semiconductor light emitting devices during a semiconductor light emitting device manufacturing process
  • FIG. 23 is a cross-sectional view taken along the line AA ′ of FIG. 22;
  • FIG. 24 is a view showing still another example of a semiconductor light emitting device according to the present disclosure.
  • 25 is a view showing still another example of a semiconductor light emitting device according to the present disclosure.
  • 26 is a view showing still another example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 27 is a diagram illustrating an example in which a semiconductor light emitting device is fixed to an external electrode
  • 29 is a photograph showing the extent of spreading on gold of liquid tin
  • FIG. 30 is a diagram illustrating an example of a configuration of an n-side electrode and / or a p-side electrode according to the present disclosure
  • 31 is a photograph showing that the lower electrode layer is blown out when a long time current is applied
  • 32 is a view showing a change in production yield according to the thickness of an electrode or bump according to the present disclosure
  • FIG. 33 is a view showing still another example of the n-side electrode and / or p-side electrode configuration according to the present disclosure.
  • FIG. 34 is a view showing still another example of the n-side electrode and / or p-side electrode configuration according to the present disclosure
  • 35 is a graph showing the DST results according to the thickness of the uppermost layer
  • FIG. 36 shows another example of an n-side electrode and / or p-side electrode configuration according to the present disclosure.
  • FIG. 37 is a view showing still another example of the n-side electrode and / or p-side electrode configuration according to the present disclosure
  • FIG. 38 shows another example of a configuration of an n-side electrode and / or a p-side electrode according to the present disclosure.
  • 39 shows another example of a configuration of an n-side electrode and / or a p-side electrode according to the present disclosure.
  • FIG. 40 shows another example of an n-side electrode and / or p-side electrode configuration according to the present disclosure.
  • 41 is a view showing still another example of the n-side electrode and / or p-side electrode configuration according to the present disclosure
  • FIG. 42 is a view showing an example of a conventional group III nitride semiconductor light emitting device
  • FIG. 43 is a view showing an example of generation of cracks upon detachment of a flip chip having an insulating reflective film
  • 44 and 45 are views for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • 46 is a view for explaining examples of a semiconductor light emitting device according to the present disclosure.
  • 47 to 51 are views for explaining another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • 52 and 53 are views illustrating still another example of a semiconductor light emitting device and a method of manufacturing the same according to the present disclosure
  • 54 is a view for explaining an example of dielectric breakdown between electrodes due to electromigration
  • 55 is a view illustrating an example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 56 is a view showing an example of a cross section taken along a line A-A in FIG. 55;
  • 57 is a view for explaining an example in which the dam blocks migration between the first electrode and the second electrode;
  • 58 is a view for explaining the relationship between the area of an electrode and the luminance of a semiconductor light emitting element
  • 59 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 60 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 61 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 62 and 63 are views for explaining still another example of the semiconductor light emitting device according to the present disclosure.
  • 64 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 65 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure.
  • 54 is a view for explaining an example of dielectric breakdown between electrodes due to electromigration
  • 66 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure.
  • 67 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 68 is a view for explaining an example of a section cut along a line A-A in FIG. 67;
  • 69 is a view showing a comparative example 1 of a semiconductor light emitting element
  • 70 is a view for explaining the relationship between the area of an electrode and the luminance of a semiconductor light emitting element
  • 71 is a view showing a comparative example 2 of a semiconductor light emitting element
  • 73 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 74 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 75 is a view for explaining an example of a section cut along the line B-B of FIG. 74;
  • FIG. 76 is a view illustrating an example in which a semiconductor light emitting device according to the present disclosure is bonded to a substrate by solder baffles;
  • 77 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 79 is a view showing an example of occurrence of cracks when detaching a flip chip having a non-conductive reflecting film
  • FIG. 80 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure.
  • 81 is a diagram for explaining the relationship between the area of an electrode and the luminance of a semiconductor light emitting element
  • FIG. 83 is a view showing an example of a cross section taken along the line A-A of FIG. 82,
  • FIG. 84 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 86 is a view showing still another example of the semiconductor light emitting device according to the present disclosure.
  • 87 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 88 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure.
  • 89 is a view for explaining an example of a cross section taken along the line A-A of FIG. 88;
  • 90 to 92 are views for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • 93 to 96 are views for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 97 through 99 are views for explaining still another example of a semiconductor light emitting device according to the present disclosure.
  • 100 is a view for explaining another example of a semiconductor light emitting device according to the present disclosure.
  • 101 and 102 are views for explaining still another example of a semiconductor light emitting device according to the present disclosure.
  • 103 and 104 are diagrams for describing still another example of the semiconductor light emitting device according to the present disclosure.
  • FIG 3 is a view illustrating an example of a semiconductor light emitting device and a method of manufacturing the same according to the present disclosure.
  • a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and interposed between the first semiconductor layer and the second semiconductor layer A plurality of semiconductor layers having an active layer that generates light through recombination are formed on the substrate (S11). Thereafter, an electrode electrically connected to the first semiconductor layer or the second semiconductor layer is formed (S21). Next, a non-conductive film is formed covering the electrodes and facing the plurality of semiconductor layers, and reflecting light from the active layer (S31).
  • an opening for exposing the electrode is formed by the first etching process (S41).
  • the material formed on the upper surface of the electrode exposed to the opening by the second etching process is removed (S51).
  • An electrical connection in contact with the electrode is formed in the opening (S61).
  • FIG. 4 is a view for explaining an example of a method of manufacturing the semiconductor light emitting device described in FIG.
  • a buffer layer 20 is first grown on a substrate 10, and an n-type semiconductor layer 30 (first semiconductor layer), an active layer 40, and a p-type semiconductor layer (on the buffer layer 20) are first grown. 50; second semiconductor layer) is sequentially grown (S11 in FIG. 3).
  • Sapphire, SiC, Si, GaN, etc. are mainly used as the substrate 10, and the substrate 10 may be finally removed, and the buffer layer 20 may be omitted.
  • the p-type semiconductor layer 50 and the active layer 40 are mesa-etched to partially expose the n-type semiconductor layer.
  • the order of mesa etching can be changed.
  • the light absorption preventing part 65 is formed on the p-type semiconductor layer corresponding to the electrode 93 to be formed in the subsequent process.
  • the light absorption prevention unit 65 may be omitted.
  • the light absorption prevention part 65 may include a single layer (eg, SiO 2 ), a multilayered film (eg, Si0 2 / TiO 2 / SiO 2 ), a distributed Bragg reflector, and a light-transmitting material having a lower refractive index than that of the p-type semiconductor layer 50. Or a combination of a single layer and a distributed Bragg reflector.
  • the light absorption prevention part 65 may be made of a non-conductive material (eg, a dielectric film such as SiO x or TiO x ).
  • a light transmissive conductive film 60 is formed on the p-type semiconductor layer 50 to cover the light absorption preventing part 65 and to spread the current through the p-type semiconductor layer 50.
  • the transparent conductive film 60 may be formed of a material such as ITO or Ni / Au.
  • an electrode 93 is formed on the transparent conductive film 60 (S21 of FIG. 3).
  • the electrode 93 is electrically connected to the p-type semiconductor layer 50 by the transparent conductive film 60.
  • An n-side bonding pad 80 that supplies electrons to the n-type semiconductor layer 30 on the exposed n-type semiconductor layer 30 may be formed with the formation of the electrode 93.
  • the n-side bonding pad 80 may be formed together with the reflective electrode 92 to be described later.
  • a non-conductive reflecting film 91 covering the electrode 93 is formed (S31 in FIG. 3).
  • the non-conductive reflective film 91 may also be formed on portions of the n-type semiconductor layer 30 and the n-side bonding pads 80 that are etched and exposed.
  • the nonconductive reflecting film 91 does not necessarily cover all regions on the n-type semiconductor layer 30 and the p-type semiconductor layer 50.
  • the nonconductive reflecting film 91 functions as a reflecting film, but is preferably formed of a light transmitting material to prevent absorption of light.
  • the nonconductive reflecting film 91 may be formed of a light transmissive dielectric material, for example, SiO x , TiO x , Ta 2 O 5 , MgF 2 .
  • the non-conductive reflecting film 91 is made of SiO x , since the non-conductive reflecting film 91 has a lower refractive index than the p-type semiconductor layer 50 (eg, GaN), light having an incident angle greater than or equal to a critical angle is provided in the plurality of semiconductor layers 30, 40, 50. Some reflections can be made to the side.
  • the p-type semiconductor layer 50 eg, GaN
  • the non-conductive reflecting film 91 is made of a distributed Bragg reflector (DBR: DBR made of a combination of SiO 2 and TiO 2 )
  • DBR distributed Bragg reflector
  • FIG. 5 is an enlarged view of a portion R2 of the opening formed by the dry etching process
  • FIG. 6 is a view illustrating an upper surface of the electrode on which the wet etching process is performed.
  • an opening 102 exposing a part of the electrode 93 is formed in the nonconductive reflecting film 91 by a dry etching process (first etching process) (S41 in FIG. 3).
  • first etching process halogen gas containing an F group (eg, CF 4 , C 2 F 6 , C 3 F 8 , SF 6, etc.) may be used as an etching gas.
  • the electrode 93 may comprise a plurality of layers.
  • the electrode 93 is formed on the contact layer 95 electrically connected to the p-type semiconductor layer 50, on the antioxidant layer 98 and the antioxidant layer 98 formed on the contact layer 95.
  • An etch stop layer 99 is included.
  • the electrode 93 includes a contact layer 95, a reflection layer 96, a diffusion barrier layer 97, an antioxidant layer 98, and an etch stop layer 99 that are sequentially formed on the transparent conductive film 60.
  • the contact layer 95 is preferably made of a material which makes good electrical contact with the transparent conductive film 60.
  • materials such as Cr and Ti are mainly used. Ni and TiW may also be used, and Al and Ag having good reflectance may be used.
  • the reflective layer 96 may be made of a metal having excellent reflectance (eg, Ag, Al, or a combination thereof).
  • the reflective layer 96 reflects the light generated by the active layer 40 toward the plurality of semiconductor layers 30, 40, and 50.
  • the reflective layer 96 may be omitted.
  • the diffusion barrier layer 97 prevents the material constituting the reflective layer 96 or the material constituting the antioxidant layer 98 from diffusing to another layer.
  • the diffusion barrier layer 97 may be formed of at least one selected from Ti, Ni, Cr, W, TiW, and the like, and when a high reflectance is required, Al, Ag, or the like may be used.
  • the antioxidant layer 98 may be made of Au, Pt, or the like, and may be any material as long as it is exposed to the outside and does not oxidize well in contact with oxygen. As the antioxidant layer 98, Au having good electrical conductivity is mainly used.
  • the etch stop layer 99 is a layer exposed in the dry etching process for forming the opening 102.
  • the etch stop layer 99 is the uppermost layer of the electrode 93.
  • Au is used as the etch stop layer 99, not only the bonding strength with the non-conductive reflecting film 91 is weak, but a portion of Au may be damaged or damaged during etching. Therefore, if the etch stop layer 99 is made of a material such as Ni, W, TiW, Cr, Pd, Mo, etc. instead of Au, the bonding strength with the non-conductive reflective film 91 can be maintained to improve the reliability.
  • the etch stop layer 99 protects the electrode 93, and in particular, prevents the damage of the antioxidant layer 98.
  • a halogen gas containing an F group eg, CF 4 , C 2 F 6 , C 3 F 8 , SF 6
  • the etch stop layer 99 may be made of a material having excellent etching selectivity in the dry etching process. If the etching selectivity of the etch stop layer 99 is not good, the antioxidant layer 98 may be damaged or damaged in the dry etching process.
  • Ni or Ni is suitable as a material of the etch stop layer 99 in view of the etching selectivity. Ni or Cr does not react with or slightly reacts with the etching gas of the dry etching process, and is not etched to protect the electrode 93.
  • a material 107 such as an insulating material or an impurity may be formed on the upper layer of the electrode 93 due to the etching gas.
  • a material 107 may be formed by reacting the halogen etching gas including the F group with the upper metal of the electrode.
  • the halogen etching gas including the F group For example, at least some of Ni, W, TiW, Cr, Pd, Mo, and the like as the material of the etch stop layer 99 may react with the etching gas of the dry etching process as shown in FIG. Example: NiF) can be formed.
  • the material 107 formed as described above may cause a decrease in electrical characteristics (eg, an increase in operating voltage) of the semiconductor light emitting device.
  • Ni, W, TiW, Cr, Pd, Mo, etc. do not react with the etching gas to form a material or form a very small amount of material. It is preferable to suppress material generation or to form a small amount, and Cr is more suitable as a material of the etch stop layer 99 than Ni in this respect.
  • the upper layer of the electrode 93 that is, the portion corresponding to the opening 102 of the etch stop layer 99 is removed by a wet etching process (second etching process) in consideration of the formation of a material, and is illustrated in FIG. 6.
  • second etching process second etching process
  • the antioxidant layer 98 corresponding to the opening 102 is exposed.
  • the material 107 is etched away along with the etch stop layer 99. As such, by removing the material 107, the electrical contact between the electrode 93 and the electrical connection 94 (see FIG. 7) is improved, and the electrical characteristics of the semiconductor light emitting device are prevented from being lowered.
  • the first etching process may be performed by wet etching to form the opening 102.
  • HF, BOE, NHO 3 , HCl, or the like may be used alone or in combination of appropriate concentrations as an etchant of the nonconductive reflecting film 91.
  • the etching selectivity of the etch stop layer 99 is excellent for protecting the antioxidant layer 98. .
  • Cr is suitable as a material of the etch stop layer 99.
  • the etch stop layer 99 corresponding to the opening 102 may be removed by a subsequent wet etching process (second etching process).
  • the etch stop layer 99 By the process of forming the opening 102 and the process of removing the etch stop layer 99 corresponding to the opening 102, the etch stop layer 99 having a good bonding strength with the non-conductive reflecting film 91 in portions other than the opening 102.
  • the electrode 93 has a configuration such as Cr (contact layer) / Al (reflective layer) / Ni (diffusion prevention layer) / Au (antioxidation layer) / Cr (etch prevention layer) sequentially stacked.
  • the etch stop layer 99 is removed from the opening 102 to prevent electrical degradation.
  • etch stop layer 99 may be wet-etched at a portion corresponding to the opening 102 to leave some etch stop layer 99. Can be removed.
  • FIG. 7 is a diagram illustrating an electrical connection formed in the opening.
  • an electrical connection 94 in contact with the electrode 93 is formed in the opening 102 (S61 in FIG. 3).
  • the electrical connection 94 may be formed in contact with the electrical connection 94 to the antioxidant layer 98 exposed through the opening 102.
  • a reflective electrode 92 may be formed on the non-conductive reflective film 91 in contact with the electrical connection 94 using a metal such as Al or Ag having a high reflectance.
  • the process of forming the reflective electrode 92 may be a method of deposition or plating.
  • the reflective electrode 92 and the electrical connection 94 may be formed together instead of separately.
  • the opening 102 is filled to form an electrical connection 94.
  • Reflective electrode 92 may be formed using Cr, Ti, Ni, or an alloy thereof for stable electrical contact.
  • the reflective electrode 92 may be electrically connected to the outside to supply holes to the p-type semiconductor layer 50, and may reflect light not reflected by the non-conductive reflective film 91.
  • the n-side bonding pad 80 may be formed on the n-type semiconductor layer 30 side or the conductive substrate side from which the substrate 10 is removed.
  • the positions of the n-type semiconductor layer 30 and the p-type semiconductor layer 50 may be changed, and are mainly made of GaN in the group III nitride semiconductor light emitting device.
  • Each semiconductor layer 20, 30, 40, 50 may be composed of multiple layers, and additional layers may be provided.
  • the electrode 93, the n-side bonding pad 80, and the reflective electrode 92 may be formed to have branches for current spreading.
  • the n-side bonding pad 80 may have a height sufficient to be coupled to the package using a separate bump, or may be deposited to a height sufficient to be coupled to the package as shown in FIG. 2.
  • the material 199 is removed between the electrode 93 and the electrical connection 94, thereby preventing deterioration of electrical characteristics of the semiconductor light emitting device.
  • a semiconductor light emitting device including an electrode 93 having good bonding force with the non-conductive reflecting film 91 and making good electrical contact with the electrical connection 94 can be manufactured.
  • FIG. 8 is a view for explaining another example of a semiconductor light emitting device and a method of manufacturing the same according to the present disclosure.
  • the manufacturing method of the semiconductor light emitting device is substantially the same as the manufacturing method of the semiconductor light emitting device described with reference to FIGS. Since the description is the same, duplicate descriptions are omitted.
  • the electrode 93 includes a contact layer 95 formed on the transparent conductive film 60, a reflective layer 96 repeatedly stacked on the contact layer 95, an anti-diffusion layer 97, and an anti-oxidation layer 98 formed on the diffusion barrier layer 97. ), An etch stop layer 99 formed on the anti-oxidation layer 98 and in contact with the non-conductive reflecting film 91. The etch stop layer 99 corresponding to the opening is removed to expose the antioxidant layer 98 and the electrical connection 94 is formed to contact the antioxidant layer 98.
  • the reflective layer 96 / diffusion diffusion layer 97 may be formed such as Al / Ni / Al / Ni / Al / Ni.
  • the area of the electrode 94 may increase.
  • prevention of light absorption by the electrode 93 may become more important, and the reflective layer 96 becomes important.
  • the formation of the reflective layer 96 such as Al with a high thickness can cause various problems such as the bursting of the Al layer, the repeated stacking of the reflective layer 96 / diffusion layer 97 as in the present example results in insulating material or impurities. Such materials can be removed to provide good electrical contact while improving reflectance to avoid problems.
  • FIG. 9 is a view illustrating another example of a semiconductor light emitting device and a method of manufacturing the same according to the present disclosure
  • FIG. 10 is a view illustrating an example of a cross section taken along line A-A in FIG. 9.
  • the manufacturing method of the semiconductor light emitting device can be applied to a large area semiconductor light emitting device.
  • the area of the electrode 93 is enlarged or extended in the form of branch electrodes, and a plurality of openings and a plurality of electrical connections 94 are formed, and the non-conductive reflecting film 91 is formed of the dielectric film 91b.
  • distribution Bragg reflector 91a (DBR: Distributed Bragg Reflector; for example, DBR made of a combination of SiO 2 and TiO 2 ) is substantially the same as the manufacturing method of the semiconductor light emitting device described in Figures 3 to 7 Therefore, duplicate descriptions are omitted.
  • the non-conductive reflecting film 91 includes a distributed Bragg reflector, it is possible to reflect a greater amount of light toward the plurality of semiconductor layers 30, 40, and 50.
  • the material is suitably SiO 2 , and the thickness thereof is appropriately 0.2 ⁇ m to 1.0 ⁇ m.
  • the dielectric film 91b made of SiO 2 is preferably formed by Chemical Vapor Deposition (CVD), and particularly, Plasma Enhanced CVD (PECVD).
  • each layer is designed to have an optical thickness of 1/4 of a given wavelength when composed of TiO 2 / SiO 2 , and the number of combinations is suitable for 4 to 20 pairs. Do.
  • the distribution Bragg reflector 91a is preferably formed by Physical Vapor Deposition (PVD), in particular, by E-Beam Evaporation, Sputtering, or Thermal Evaporation.
  • An additional dielectric film may be formed over the distribution Bragg reflector 91a prior to forming the reflective electrode 92.
  • Dielectric film 91b, distributed Bragg reflector 91a and further dielectric film form a lightguide structure.
  • a plurality of electrical connections 94 are formed between the electrode 93 and the p-side reflective electrode 92 to spread current. Accordingly, a material may be formed on the upper surface of the electrode 93 exposed by the plurality of openings in the dry etching process for forming the plurality of openings in the non-conductive reflective film 91.
  • the wet etching process removes the material corresponding to the opening along with the upper layer of the electrode 93, for example the etch stop layer.
  • An electrical connection 94 is then formed in the plurality of openings. Therefore, the degradation of the electrical characteristics of the large-area semiconductor light emitting device is prevented.
  • FIG. 11 is a view for explaining another example of a semiconductor light emitting device and a method of manufacturing the same according to the present disclosure.
  • an n-side bonding pad 80 is formed on a non-conductive reflective film 91 to form an electrical connection 82 between the n-side bonding pad 80 and the n-side branch electrode 81. Since the process of forming the opening and the heat dissipation and reflective electrode 108 are provided, the description thereof is substantially the same as the method of manufacturing the semiconductor light emitting device described with reference to FIGS.
  • the n-side branch electrode 81 may have a material such as an insulating material or an impurity formed on the top surface thereof.
  • Subsequent wet etching processes may remove the material on the upper surface of the electrode 93 and the n-side branch electrode 81 exposed through the opening, together with the etch stop layer. Thereafter, electrical connections 94 and 82 are formed. The electrical connections 94 and 82 may be formed to contact the antioxidant layers of the exposed electrode 93 and the n-side branch electrode 81 by removing the etch stop layer.
  • the p-side bonding pad 92 and the n-side bonding pad 80 are electrically connected to the p-type semiconductor layer 50 and the n-type semiconductor layer 30 through electrical connections 94 and 82, respectively.
  • FIG. 12 is a view for explaining another example of a semiconductor light emitting device and a method of manufacturing the same according to the present disclosure.
  • the transparent conductive film and the light absorption preventing part are omitted, and the electrode 93 is formed on the entire surface of the p-type semiconductor layer 50 so as to function as a reflecting film and a current spreading conductive film. Since the n-side branch electrode 81 is further provided, the description thereof is substantially the same as the method of manufacturing the semiconductor light emitting device described with reference to FIGS.
  • the electrode 93 includes a reflective layer 96 formed of a material having excellent reflectance such as Ag or Al, and the reflective layer 96 also functions as the p-type semiconductor layer 50 and the ohmic contact layer.
  • the electrode 93 includes an etch stop layer 99 formed of a material having good bonding strength with the non-conductive film 91 on the reflective layer 96.
  • the electrode 93 may include an etch stop layer 93b formed of a material such as Ni, W, TiW, Cr, Pd, or Mo on the reflective layer 93a such as an Ag layer or an Al layer.
  • the etch stop layer 99 may be formed entirely on the Ag layer or the Al layer or may be formed only in a portion corresponding to the opening.
  • the etch stop layer 99 is preferably selected in consideration of the fact that the etching selectivity should be good in the dry etching process for forming the opening, and that the smaller the formation of a material such as an insulating material or an impurity that does not react with the etching gas or is less preferable, In this respect, Cr or Ni is suitable.
  • the dielectric film 91 is formed as a non-conductive film.
  • the dielectric film 91 may be formed of a light transmissive dielectric material, for example, SiO x , TiO x , Ta 2 O 5 , MgF 2 .
  • Openings are formed in the dielectric film 91 by a dry etching process.
  • a material such as an insulating material or an impurity may be formed on the top surface of the electrode 93.
  • the material is removed by a wet etching process.
  • a part of the electrode 93 for example, at least a part of the etch stop layer 99 corresponding to the opening may be removed.
  • An electrical connection 94 is formed in the opening. Therefore, the rise of the operating voltage of the semiconductor light emitting device due to the material is prevented.
  • FIG. 13 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure
  • FIG. 14 is a cross-sectional view taken along line AA of FIG. 13
  • FIG. 15 is a cross-sectional view taken along line BB of FIG. 13, and
  • FIG. 16 is a view showing a state in which a p-side electrode, an n-side electrode, and a non-conductive reflective film are removed from the semiconductor light emitting device of FIG. 13.
  • the semiconductor light emitting device 1 is grown on the substrate 10, the buffer layer 20 grown on the substrate 10, the n-type semiconductor layer 30 grown on the buffer layer 20, and the n-type semiconductor layer 30. And an active layer 40 generating light through recombination of holes and a p-type semiconductor layer 50 grown on the active layer 40.
  • the substrate 10 is mainly used as the substrate 10, and the substrate 10 may be finally removed, and the buffer layer 20 may be omitted.
  • the n-side electrode 80 may be formed on the n-type semiconductor layer 30 side or the conductive substrate 10 side from which the substrate 10 is removed.
  • the positions of the n-type semiconductor layer 30 and the p-type semiconductor layer 50 may be changed, and are mainly made of GaN in the group III nitride semiconductor light emitting device.
  • Each semiconductor layer 20, 30, 40, 50 may be composed of multiple layers, and additional layers may be provided.
  • the p-type semiconductor layer 50 and the active layer 40 are partially removed through a mesa etching process to form two n-side contact regions 31 exposing the n-type semiconductor layer 30.
  • the n-side branch electrode 81 is formed on the n-type semiconductor layer 30 in the 31.
  • the n-side contact region 31 extends in parallel with one side C of the semiconductor light emitting device.
  • the n-side contact region 31 may be opened in the lateral direction of the semiconductor light emitting device, but it is preferable that the n-side contact region 31 is not opened to any one side and is surrounded by the active layer 40 and the p-type semiconductor layer 50. .
  • the number of n-side contact regions 31 can be increased or decreased, and the arrangement can be changed.
  • the n-side branch electrode 81 preferably includes a branch portion 88 that extends long and a connection portion 89 formed to have a wide width at one end of the branch portion 88.
  • the n-side contact region 31 is formed in a narrow width at the portion where the branch portion 88 of the n-side branch electrode 81 is positioned, and the connection portion 89 of the n-side branch electrode 81 is positioned. It is formed in a wide width.
  • Three p-side branch electrodes 93 are formed on the p-type semiconductor layer 50.
  • the p-side branch electrode 93 is formed in parallel with the n-side branch electrode 81 and is arranged between the two n-side branch electrodes 81 and on both sides. Accordingly, the n-side branch electrodes 81 are positioned between the three p-side branch electrodes 93, respectively.
  • the p-side branch electrode 93 also preferably includes an elongated branch portion 98 and a connecting portion 99 formed to have a wide width at one end of the branch portion 98. However, as shown in FIG.
  • the connecting portion 99 of the p-side branch electrode 93 is located on the opposite side of the connecting portion 89 of the n-side branch electrode 81 when the semiconductor light emitting device is viewed from above. That is, the connecting portion 99 of the p-side branch electrode 93 is positioned at the left side, and the connecting portion 89 of the n-side branch electrode 81 is positioned at the right side.
  • the p-side branch electrode 93 extends along the direction of one side C of the semiconductor light emitting device. For example, in FIGS. 13 and 16, it extends long from left to right.
  • the p-side branch electrode 93 When the device is turned upside down by the plurality of p-side branch electrodes 93 extending in this way and placed on a mounting portion (for example, a submount, a package, and a chip on board (COB)), the elements can be placed without tilting. From this point of view, the p-side branch electrode 93 is preferably formed as long as possible.
  • p-side branch electrode 93 and n-side branch electrode 81 2um-3um are suitable. Too thin a thickness leads to an increase in operating voltage, and too thick a branch electrode can lead to process stability and material cost increase.
  • a light absorption prevention film 95 is formed on the p-type semiconductor layer 50 corresponding to the p-side branch electrode 93.
  • the light absorption prevention film 95 is formed in a slightly wider width than the p-side branch electrode 93.
  • the light absorption prevention film 95 prevents light generated in the active layer 40 from being absorbed by the p-side branch electrode 93.
  • the light absorption prevention film 95 may have only a function of reflecting some or all of the light generated in the active layer 40, and current from the p-side branch electrode 93 does not flow directly below the p-side branch electrode 93. It may have only a function that prevents it, and may have both functions.
  • the light absorption prevention film 95 is a single layer (e.g. SiO 2 ) or a multilayer (e.g. Si0 2 / TiO 2 / SiO 2 ) made of a light-transmissive material having a lower refractive index than the p-type semiconductor layer 50 Or a distribution Bragg reflector, or a combination of a single layer and a Distribution Bragg reflector.
  • the light absorption prevention layer 95 may be made of a non-conductive material (eg, a dielectric material such as SiO x or TiO x ).
  • the thickness of the light absorption prevention film 95 is appropriately 0.2um to 3.0um depending on the structure. If the thickness of the light absorption prevention film 95 is too thin, the function is weak.
  • the light absorption prevention film 95 does not necessarily need to be made of a light transmissive material, nor is it necessarily necessarily made of a non-conductive material. However, by using the transparent dielectric material, the effect can be further enhanced.
  • the transmissive conductive film 60 is formed on the p-type semiconductor layer 50 before the p-side branch electrode 93 is formed following the formation of the light absorption prevention film 95.
  • the transparent conductive film 60 is formed to cover almost the entirety of the p-type semiconductor layer 50 except for the n-side contact region 31 formed through the mesa etching process. Therefore, the light absorption prevention film 95 is disposed between the transparent conductive film 60 and the p-type semiconductor layer 50.
  • the current spreading ability is inferior, and in the case where the p-type semiconductor layer 50 is made of GaN, most of the transparent conductive film 60 should be assisted.
  • the transparent conductive film 60 For example, materials such as ITO and Ni / Au may be used as the transparent conductive film 60.
  • the p-side branch electrode 93 is formed on the transparent conductive film 60 on which the light absorption prevention film 95 is located.
  • the non-conductive reflecting film 91 is formed so as to cover 50 entirely.
  • the nonconductive reflecting film 91 reflects light from the active layer 40 to the n-type semiconductor layer 30 when the substrate 10 used for growth or the substrate 10 is removed. It is preferable that the nonconductive reflective film 91 also covers the exposed surfaces of the p-type semiconductor layer 50 and the active layer 40 that connect the top surface of the p-type semiconductor layer 50 and the top surface of the n-side contact region 31. Do. However, those skilled in the art will appreciate that the non-conductive reflective film 91 does not necessarily cover all regions on the n-type semiconductor layer 30 and the p-type semiconductor layer 50 exposed by etching on the opposite side of the substrate 10. Should be placed on
  • the non-conductive reflecting film 91 functions as a reflecting film but is preferably made of a light transmitting material to prevent absorption of light.
  • the non-conductive reflecting film 91 may be formed of a light transmitting dielectric material such as SiO x , TiO x , Ta 2 O 5 , and MgF 2 . Can be configured.
  • the non-conductive reflecting film 91 is a single dielectric film composed of a transparent dielectric material such as SiO x , for example, a single distributed Bragg reflector made of a combination of SiO 2 and TiO 2 , a plurality of heterogeneous dielectric films or dielectrics.
  • the dielectric film has a lower refractive index than the p-type semiconductor layer 50 (eg, GaN), it is possible to partially reflect light above the critical angle to the substrate 10 side, and the distribution Bragg reflector transmits a larger amount of light to the substrate 10. It can be reflected to the side and can be designed for a specific wavelength can be effectively reflected in response to the wavelength of light generated.
  • the p-type semiconductor layer 50 eg, GaN
  • the non-conductive reflecting film 91 has a double structure of the distribution Bragg reflector 91a and the dielectric film 91b.
  • the dielectric film 91b having a predetermined thickness can be formed, whereby the distributed Bragg reflector 91a can be stably manufactured and can also help to reflect light. have.
  • the semiconductor light emitting device there is a step in mesa etching for forming the n-side contact region 31, and the step such as the p-side branch electrode 93 or the n-side branch electrode 81. And a process for punching the non-conductive reflecting film 91 as described in detail below even after the non-conductive reflecting film 91 is formed, thus forming the dielectric film 91b. Especially when you need to be careful.
  • the material of the dielectric film 91b is suitably SiO 2 , and the thickness thereof is preferably 0.2 ⁇ m to 1.0 ⁇ m. If the thickness of the dielectric film 91b is too thin, it may be insufficient to sufficiently cover the n-side branch electrode 81 and the p-side branch electrode 93 having a height of about 2 ⁇ m to 3 ⁇ m. This can be a burden on the hole forming process. The thickness of the dielectric film 91b may then be thicker than the thickness of the subsequent distribution Bragg deflector 91a. In addition, it is necessary to form the dielectric film 91b in a manner more suitable for securing device reliability.
  • the dielectric film 91b made of SiO 2 is preferably formed by Chemical Vapor Deposition (CVD), and particularly, Plasma Enhanced CVD (PECVD).
  • CVD Chemical Vapor Deposition
  • PECVD Plasma Enhanced CVD
  • a step exists and covers the step region. This is because the deposition method is advantageous compared to physical vapor deposition (PVD) such as E-Beam Evaporation.
  • PVD physical vapor deposition
  • E-Beam Evaporation such as E-Beam Evaporation.
  • the inclined surface formed by the side or mesa etching of the p-side branch electrode 93 and the n-side branch electrode 81 having a step difference may be formed.
  • the dielectric film 91b is formed thin on the stepped surface or the like, and the dielectric film 91b is formed thin on the stepped surface, the p-side branch electrode 93 and the n-side branch electrode 81 will be described below.
  • the dielectric film 91b is formed by chemical vapor deposition for reliable insulation. It is preferable. Therefore, it is possible to secure the function as the non-conductive reflective film 91 while securing the reliability of the semiconductor light emitting element.
  • the distribution Bragg reflector 91a is formed on the dielectric film 91b to form the non-conductive reflecting film 91 together with the dielectric film 91b.
  • the distribution Bragg reflector 91a of a repeating laminated structure composed of a combination of TiO 2 / SiO 2 is physical vapor deposition (PVD), and among them, electron beam deposition (E-Beam Evaporation) or sputtering (Sputtering). Or by thermal evaporation.
  • PVD physical vapor deposition
  • E-Beam Evaporation electron beam deposition
  • Sputtering sputtering
  • thermal evaporation electron beam deposition
  • each layer is designed to have an optical thickness of 1/4 of a given wavelength, the number of combinations being 4 to 20 pairs. Suitable. This is because if the number of combinations is too small, the reflection efficiency of the distribution Bragg reflector 91a is reduced, and if the number of combinations is too large, the thickness becomes excessively thick.
  • the non-conductive reflecting film 91 Due to the formation of the non-conductive reflecting film 91, the p-side branch electrode 93 and the n-side branch electrode 81 are completely covered by the non-conductive reflecting film 91.
  • the non-conductive reflective film 91 is formed.
  • a hole in the form of a through hole is formed, and electrical connections 94 and 82 in the form of an electrode material filled in the hole are formed.
  • Such holes are preferably formed by dry etching or wet etching, or a combination of both.
  • the electrical connection 94 is connected to the p-side branch electrode 93 and the n-side branch electrode. (81) It is preferred to be located above each connection 99,89.
  • a large number of electrical connections 94 must be formed and directly connected to the transparent conductive film 60 provided almost in front of the p-type semiconductor layer 50, and the n-side branch electrode 81 ), A large number of electrical connections 82 must be formed and connected directly to the n-side contact region 31, but between the p-side electrode 92 and the transparent conductive film 60 and the n-side electrode 80 and n It is not only easy to form a good electrical contact between the type semiconductor layers 30, but also causes many problems in the manufacturing process.
  • the present disclosure forms the n-side branch electrode 81 over the n-side contact region 31, and the p-side branch electrode 93 is formed of the p-type semiconductor layer 50 or preferably. Is formed on the light-transmissive conductive film 60, and then heat treated, thereby making it possible to create stable electrical contact between the two.
  • the p-side electrode 92 and the n-side electrode 80 are formed on the non-conductive reflective film 91.
  • the p-side electrode 92 and the n-side electrode 80 cover all or almost all of the non-conductive reflecting film 91 in view of helping to reflect light from the active layer 40 toward the substrate 10 side. It is formed over a large area and serves as a conductive reflective film.
  • the p-side electrode 92 and the n-side electrode 80 are preferably spaced apart from each other on the non-conductive reflective film 91 in order to prevent a short circuit. Therefore, the p-side electrode 92 is disposed on the non-conductive reflective film 91.
  • the p-side electrode 92 and the n-side electrode 80 serve to supply current to the p-side branch electrode 93 and the n-side branch electrode 81, and have a function of connecting the semiconductor light emitting device to an external device, It is formed over an area to perform a function of reflecting light from the active layer 40 and / or a heat radiation function.
  • the semiconductor light emitting device according to the present disclosure has an advantage when coupled to a mounting portion (eg, submount, package, COB). This advantage is particularly large when using a bonding method of eutectic bonding.
  • the p-side branch electrode 93 and the n-side branch electrode 81 are both non-conductive reflective film 91.
  • the p-side branch electrode 93 extends long under the n-side electrode 80 overlying the non-conductive reflecting film 91
  • the n-side branch electrode 81 extends to the non-conductive reflecting film (). 91 extends through the bottom of the p-side electrode 92 overlying.
  • the electrodes 92 and 80 and the branch are formed. Short circuits between the electrodes 93 and 81 are prevented.
  • the p-side branch electrode 93 and the n-side branch electrode 81 as described above, it is possible to supply a current to the semiconductor layer region that is required without restriction in forming a flip chip.
  • the p-side electrode 92, the n-side electrode 80, the p-side branch electrode 93 and the n-side branch electrode 81 are composed of a plurality of metal layers.
  • the lowermost layer should have a high bonding strength with the transparent conductive film 60, and materials such as Cr and Ti may be mainly used, and Ni, Ti, TiW, and the like may also be used.
  • materials such as Cr and Ti may be mainly used, and Ni, Ti, TiW, and the like may also be used.
  • Al, Ag and the like having good reflectance can also be used for the p-side branch electrode 93 and the n-side branch electrode 81.
  • Au is used for wire bonding or connection with an external electrode.
  • Ni, Ti, TiW, W, or the like is used between the lowermost layer and the uppermost layer depending on the required specification, or when a high reflectance is required.
  • Al, Ag and the like are used.
  • Au since the p-side branch electrode 93 and the n-side branch electrode 81 must be electrically connected to the electrical connections 94 and 82, Au may be considered as the uppermost layer.
  • the inventors have found that it is inappropriate to use Au as the uppermost layer of the p-side branch electrode 93 and the n-side branch electrode 81.
  • the non-conductive reflective film 91 is deposited on Au, there is a problem in that the bonding force between the two is weak and easily peeled off.
  • the uppermost layer of the branch electrode is made of a material such as Ni, Ti, W, TiW, Cr, Pd, Mo instead of Au, the adhesion to the non-conductive reflective film 91 to be deposited thereon is maintained. Reliability can be improved.
  • the above metal serves as a diffusion barrier to help secure the stability of the subsequent processes and the electrical connections 94 and 82. Becomes
  • FIG. 17 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure
  • FIG. 18 is a cross-sectional view taken along the line D-D of FIG. 17
  • FIG. 19 is a cross-sectional view taken along the line E-E of FIG. 17.
  • the non-conductive reflecting film 91 is in addition to the dielectric film 91b and the distribution Bragg reflector 91a and the distribution Bragg reflector 91a. It further includes a clad film 91f formed thereon. A large portion of light generated in the active layer 40 is reflected by the dielectric film 91b and the distributed Bragg reflector 91a toward the n-type semiconductor layer 30, but the dielectric film 91b and the Distributed Bragg reflector 91a are also constant. Because of its thickness, some light is trapped therein or emitted through the side of the dielectric film 91b and the distributed Bragg reflector 91a.
  • the inventors have analyzed the relationship between the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91f from the viewpoint of an optical waveguide.
  • the optical waveguide is a structure that guides the light by using total reflection by surrounding the light propagation part with a material having a lower refractive index. From this point of view, when the distributed Bragg reflector 91a is viewed as the propagation section, the dielectric film 91b and the clad film 91f can be regarded as part of the configuration surrounding the propagation section.
  • the effective refractive index of the distribution Bragg reflector 91a (where the effective refractive indices are mutually Means the equivalent refractive index of light that can travel in a waveguide made of materials with different refractive indices, and has a value between 1,46 and 2.4.) Is higher than that of the dielectric film 91b of SiO 2 .
  • the clad film 91f is also made of a material lower than the effective refractive index of the distributed Bragg reflector 91a.
  • the cladding film 91f has a thickness of ⁇ / 4n to 3.0um (where ⁇ is a wavelength of light generated in the active layer 40 and n is a material of the cladding film 91f). Refractive index).
  • the clad film 91f may be formed of SiO 2 , which is a dielectric having a refractive index of 1.46.
  • ⁇ is 450 nm (4500 A)
  • the uppermost layer of the distributed Bragg deflector 91a consisting of a plurality of pairs of SiO 2 / TiO 2 may be made of an SiO 2 layer having a thickness of ⁇ / 4n
  • the clad film 91f is positioned below It is preferable to be thicker than [lambda] / 4n so as to be differentiated from the top layer of the distribution Bragg deflector 91a, and not only burden the subsequent hole forming process, but also 3.0 because the increase in thickness does not contribute to the efficiency and only the material cost can be increased. It is not desirable to be too thick above um, but in some cases it is not impossible to form above 3.0 um.
  • part of the light traveling through the distribution Bragg reflector 91a is the p-side electrode 92 and the n-side electrode. Absorption may occur while being affected by 80, wherein a clad film having a refractive index lower than that of the distribution Bragg reflector 91a is formed between the p-side electrode 92 and the n-side electrode 80 and the distribution Bragg reflector 91a.
  • 91f By inserting 91f), it is possible to minimize the absorption of part of the light traveling through the distribution Bragg reflector 91a at the p-side electrode 92 and the n-side electrode 80, thereby increasing the efficiency of light.
  • the thickness of the clad film 91f is preferably ⁇ / 4n or more.
  • the difference in refractive index between the distributed Bragg reflector 91a and the clad film 91f is large, the light is more strongly constrained by the Distributed Bragg reflector 91a, but a thinner clad film 91f can be used. If the difference in refractive index is small, the thickness of the clad film 91f should be sufficiently thick to obtain the above-described effect.
  • the thickness of the clad film 91f needs to be sufficiently considered as the difference between the refractive index of the material constituting the clad film 91f and the effective refractive index of the distribution Bragg reflector 91a.
  • the clad film 91f is made of SiO 2 and the distribution Bragg reflector 91a is made of SiO 2 / TiO 2
  • the clad film can be distinguished from the top layer of the distribution Bragg reflector 91a made of SiO 2 .
  • the thickness of 91f is 0.3 um or more.
  • the maximum value of the clad film 91f be formed within 1 ⁇ m to 3 ⁇ m.
  • the clad film 91f is not particularly limited as long as the clad film 91f has a refractive index lower than the effective refractive index of the distribution Bragg reflector 91a, and may include a metal oxide such as Al 2 O 3 , a dielectric film such as SiO 2 , SiON, MgF, CaF, or the like. It may be made of. When the difference in refractive index is small, the thickness can be made thick to achieve the effect. In addition, it is possible to increase the efficiency in the case of using the SiO 2, using SiO 2 having a refractive index lower than 1.46.
  • the dielectric film 91b is omitted may be considered, it is not preferable from the viewpoint of the optical waveguide, but from the viewpoint of the overall technical idea of the present disclosure, it is composed of the distributed Bragg reflector 91a and the clad film 91f. There is no reason to rule out this.
  • a case may include a dielectric film made of TiO 2 , which is a dielectric material.
  • the distribution Bragg reflector 91a is provided with the SiO 2 layer on the uppermost layer, the case where the clad film 91f is omitted may also be considered.
  • the non-conductive reflecting film 91 consists of a low refractive index dielectric film 91b and a clad film 91f positioned above and below a high effective refractive index distributed Bragg reflector 91a and a distributed Bragg reflector 91a. It serves as a guide, it is preferred that the total thickness is 3 ⁇ 8um.
  • the nonconductive reflecting film 91 has an inclined surface 91m at its edge. The inclined surface 91m of the edge may be formed through, for example, a dry etching process.
  • the light incident on the non-conductive reflecting film 91 serving as the optical waveguide the light incident on the non-conductive reflecting film 91 at a vertical or near vertical angle is well reflected to the substrate 10 side, but at an oblique angle.
  • Some of the light including the light incident on the non-conductive reflecting layer 91 may not be reflected toward the substrate 10 and may be trapped in the distribution Bragg reflector 91a serving as the propagation unit and propagate to the side surface.
  • the light propagating to the side surface of the distribution Bragg reflector 91a is emitted to the outside from the inclined surface 91m at the edge of the non-conductive reflecting film 91 or is reflected to the substrate 10 side.
  • the inclined surface 91m at the edge of the non-conductive reflecting film 91 serves as a corner reflector and contributes to the improvement of luminance of the semiconductor light emitting device. It is preferable that the inclined surface 91m has an angle within a range of 50 ° to 70 ° for smooth reflection to the substrate 10 side.
  • the inclined surface 91m may be easily formed by wet etching or dry etching, or a combination thereof.
  • FIG. 20 is a view showing a state before two semiconductor light emitting devices are separated into independent semiconductor light emitting devices during a semiconductor light emitting device manufacturing process
  • FIG. 21 shows two semiconductor light emitting devices as separate semiconductor light emitting devices during a semiconductor light emitting device manufacturing process. It is a figure which shows the state.
  • FIGS. 20 and 21 illustrate a semiconductor light emitting device 3 in which a p-side electrode 92, an n-side electrode 80, and a bonding pad 97 are not formed to explain a manufacturing process.
  • the semiconductor light emitting device is manufactured in the form of a wafer including a plurality of semiconductor light emitting devices, and then separated into individual semiconductor light emitting devices by cutting by a method such as breaking, sawing, scribing and breaking.
  • a method such as breaking, sawing, scribing and breaking.
  • the scribing process uses a laser and can be performed by applying a laser focusing on the substrate side including the substrate surface and the inside of the substrate of the semiconductor light emitting device.
  • the semiconductor light emitting element is preliminarily along the edge boundary G of the semiconductor light emitting element 3, that is, the boundary G between the semiconductor light emitting element 3 and the semiconductor light emitting element 3. To be cut.
  • the pre-cut semiconductor light emitting device is completely separated into individual semiconductor light emitting devices through a breaking process performed following the scribing process.
  • the braking step is, for example, an external force along the boundary line G between the semiconductor light emitting element 3 and the semiconductor light emitting element 3 in the direction of the substrate 10 indicated by the arrow F in FIG. 20 or vice versa. This is done by adding.
  • the substrate 10 and the semiconductor layers 20, 30, 40, and 50 may be precisely cut along the boundary line G as the crystalline, but the ratio on the p-type semiconductor layer 50 Since the malleable reflecting film 91 is amorphous, the malleable reflecting film 91 is not accurately cut along the boundary line G, and cracks are likely to occur in the area around the edge of the nonconductive reflecting film 91. Such damage to the edge peripheral area of the non-conductive reflecting film 91 has a problem of yield decrease due to poor appearance.
  • the semiconductor light emitting device and the semiconductor light emitting device before the scribing process and the braking process using a laser for manufacturing a semiconductor light emitting device in the form of a wafer including a plurality of semiconductor light emitting devices and then separated into individual semiconductor light emitting devices
  • the partial region H of the non-conductive reflecting film 91 around the boundary line G between them is removed.
  • the partial region H of the nonconductive reflecting film 91 removed along the boundary line G of the semiconductor light emitting device 3 corresponds to the edge region of the nonconductive reflecting film 91 from the viewpoint of the individual semiconductor light emitting device.
  • the removal of the partial region H of the non-conductive reflective film 91 around the boundary line G is different from the non-conductive reflective film 91 provided in one semiconductor light emitting device before being separated into individual semiconductor light emitting devices. It also means that the non-conductive reflecting film 91 provided in the semiconductor light emitting device is separated from each other in the boundary line G region.
  • the removal of the partial region H of the non-conductive reflective film 91 may be performed by dry etching or the like, and may be performed before performing the braking process of the entire semiconductor manufacturing process. However, when forming a hole through the non-conductive reflective film 91 to form electrical connections 94 and 82 by a method such as dry etching, it is preferably formed together.
  • the inclined surface 91m which serves as a corner reflector, may be formed through a separate etching process, but in order to prevent damage, the non-conductive reflective film of the individual semiconductor light emitting device may be removed in a process of removing the edge region of the non-conductive reflective film 91. (91) It may be formed at the same time by etching so that the edge portion becomes the inclined surface 91m.
  • a bonding pad 97 may be provided as part of the p-side electrode 92 and the n-side electrode 80 on the p-side electrode 92 and the n-side electrode 80, respectively. Can be.
  • the upper surface of the bonding pad 97 on the p-side electrode 92 and the upper surface of the bonding pad 97 on the n-side electrode 80 have the same height. That is, the upper surface of the bonding pad 97 on the p-side electrode 92 and the upper surface of the bonding pad 97 on the n-side electrode 80 are on the same plane.
  • Such a bonding pad 97 is such that the p-side electrode 92 side and the n-side electrode 80 side have the same final height when the semiconductor light emitting device is coupled with an external device by, for example, a Jewish bonding method. By preventing the inclination on the mounting portion, to provide a wide and flat coupling surface to obtain a good coupling force, and performs the function of dissipating heat inside the semiconductor light emitting device to the outside.
  • a plurality of bonding pads 97 may be provided on the p-side electrode 92 and the n-side electrode 80, respectively, and the n-side branch electrode 81 and the p-side electrode 92 and the n-side electrode 80 may also be provided.
  • the bonding pad 97 is formed in a region except for the p-side branch electrode 93 portion that protrudes upward and the n-side branch electrode 81 portion that is recessed downward.
  • the bonding pad 97 may be formed in a multi-layer structure including a spacer layer 97a below and a bonding layer 97b on the spacer layer 97a.
  • the bonding pad 97 may have a total thickness of 5 ⁇ m to 6 ⁇ m. .
  • the spacer layer 97a is formed of a metal layer such as Ni, Cu, or a combination thereof, and the bonding layer 97b has Ni / Sn, Ag / Sn / Cu, Ag / Sn to have a thickness of about several um.
  • Cu / Sn, Au / Sn combination may be made of a eutectic bonding layer.
  • the spacer layer 97a functions as a diffusion barrier and a wetting layer for the solder used for the eutectic bonding, and the bonding pad 97 includes the eutectic bonding layer including the expensive Au as a whole. It also reduces the cost burden compared to forming with (97b).
  • the bonding pads 97 may protrude to the top of the p-side electrode 92 and the n-side electrode 80, that is, the p-side branches, in order to match the final height of the bonding surface at the time of bonding (eg, etchant bonding). It is preferable to form 1 to 3 um higher than the height of the portion above the electrode 93. Therefore, at the time of bonding, good coupling between the semiconductor light emitting element and the mounting portion can be obtained, which helps heat dissipation of the semiconductor light emitting element.
  • the spacer layer 97a and the bonding layer 97b may be formed by various methods such as plating, E-Beam Evaporation, and Thermal Evaporation.
  • the region to be etched in the semiconductor light emitting device 100 is limited to the n-side contact region 31, and there is no other portion to be etched at the edge, and all the sides around the semiconductor light emitting device 100 are scribed and It consists of a cut surface by a braking process or the like. As a result, the area of the active layer 40 generating light is increased to improve light extraction efficiency.
  • the stepped surface generated in the etching process that is, the exposed side of the active layer 40 and the p-type semiconductor layer 50 connecting the top surface of the p-type semiconductor layer 50 and the top surface of the n-side contact region 31. Is minimized.
  • the exposed side surfaces of the active layer 40 and the p-type semiconductor layer 50 are difficult to deposit the distributed Bragg reflector 91a constituting the nonconductive reflecting film 91, particularly when forming the nonconductive reflecting film 91. to be. Accordingly, the distribution Bragg reflector 91a of the exposed side regions of the active layer 40 and the p-type semiconductor layer 50 may have a relatively low reflection efficiency. As the exposed side surfaces of the active layer 40 and the p-type semiconductor layer 50 are minimized, a region having low reflection efficiency in the distribution Bragg reflector 91a can be minimized, and the reflection efficiency can be improved as a whole.
  • FIG. 22 is a diagram illustrating still another example of the semiconductor light emitting device according to the present disclosure
  • FIG. 23 is a cross-sectional view taken along line AA ′ of FIG. 22.
  • the first feature of this embodiment is that the branch electrodes 93 on the p-type semiconductor layer 50 are separated from each other, through each electrical connection 94, and then by electrode 92.
  • the electrode 92 has a function of supplying a current to the branch electrode 93, a function of reflecting light, a heat dissipation function, and / or a function of connecting the element and the outside.
  • branch electrode 93 extends along the direction of one side C of the device. For example, in FIG. 22, it extends long toward the electrode 80 from the electrode 92 side.
  • the branch electrodes 93 extends along the direction of one side C of the device. For example, in FIG. 22, it extends long toward the electrode 80 from the electrode 92 side.
  • a third feature of this embodiment is that the electrode 80 is positioned over the nonconductive reflecting film 91.
  • the electrode 80 is connected with the branch electrode 81 through an electrical connection 82.
  • the electrode 80 has the same function as the electrode 92.
  • the branch electrode 81 can be arranged in the same manner as the branch electrode 93.
  • a fifth feature of this embodiment is the provision of an auxiliary heat dissipation pad 97.
  • the auxiliary heat dissipation pad 97 has a function of emitting heat to the outside and / or a function of reflecting light, while being electrically separated from the electrode 92 and / or the electrode 80, thereby the electrode 92 and the electrode 80 to prevent electrical contact between.
  • the auxiliary heat dissipation pad 93 may be used for bonding.
  • the entire element Does not cause problems with the electrical operation.
  • auxiliary heat dissipation pads 121, 122, 123, and 124 are illustrated between the electrode 92 and the electrode 80.
  • the auxiliary heat radiation pads 121, 122, 123, and 124 are positioned between the branch electrodes 92 or between the branch electrodes 92 and the branch electrodes 81.
  • the front surface of the device may adhere to the mounting part during bonding (eg, eutectic bonding) to help heat dissipation of the device.
  • the auxiliary heat dissipation pad 121 and the auxiliary heat dissipation pad 122 are separated from the electrode 92 and the electrode 80, and the auxiliary heat dissipation pad 123 is connected to the electrode 92 and the auxiliary heat dissipation pad 124. Is connected to the electrode 80.
  • FIG. 25 is a diagram illustrating still another example of the semiconductor light emitting device according to the present disclosure, wherein the branch electrode 93 extends below the electrode 80 (past the reference line B).
  • the branch electrodes 93 on the p-type semiconductor layer 50 it is possible to supply a current to an element region which is required without restriction in forming a flip chip.
  • Two electrical connections 94 and 94 are provided and the electrical connections 94 can be placed where needed depending on the conditions required for current spreading.
  • the electrical connection 94 on the left side may be omitted.
  • the electrode 92 also functions as an auxiliary heat radiation pad 97 (see FIG. 22).
  • the electrical connection 94 may be directly connected to the transparent conductive film 60 to supply current, but the current may be directly supplied to the p-type semiconductor 50 under the electrode 80.
  • the branch electrode 93 By introducing the branch electrode 93, the current can be supplied even below the electrode 80 which supplies the current to the n-type semiconductor layer 30. The same is true for the electrical connection 82.
  • FIG. 26 is a diagram illustrating still another example of the semiconductor light emitting device according to the present disclosure, wherein the non-conductive reflecting film 91 is formed of multilayer dielectric films 91c, 91d, and 91e.
  • the non-conductive reflecting film 91 may be composed of a dielectric film 91c made of SiO 2 , a dielectric film 91d made of TiO 2 , and a dielectric film 91e made of SiO 2 , which may serve as a reflecting film.
  • the non-conductive reflecting film 91 is formed to include a DBR structure.
  • the semiconductor light emitting device In forming the semiconductor light emitting device according to the present disclosure, a structure such as the branch electrode 93 or the branch electrode 81 is required, and even after the non-conductive reflecting film 91 is formed, the electrical connection 94 or the electrical connection ( 82). Since the process of forming the semiconductor light emitting device is required, it is possible to influence device reliability such as generation of a leakage current after the manufacture of the semiconductor light emitting device. Therefore, in the formation of the dielectric film 91c made of SiO 2 , special attention is required. Needs to be. For this purpose, first, it is necessary to form the thickness of the dielectric film 91c thicker than the thickness of the subsequent dielectric films 91d and 91e.
  • a dielectric film 91c made of SiO 2 is formed by Chemical Vapor Deposition (CVD), particularly (preferably) Plasma Enhanced CVD (PECVD), and is formed by TiO 2.
  • the dielectric layer 91d / dielectric layer 91e made of / SiO 2 DBR has a repeated structure of physical vapor deposition (PVD), and preferably (preferably) electron beam evaporation or sputtering. Or by thermal evaporation, it is possible to secure the function as the non-conductive reflective film 91 while ensuring the reliability of the semiconductor light emitting device according to the present disclosure.
  • Step coverage such as mesa-etched regions, is advantageous because chemical vapor deposition is advantageous over physical vapor deposition, in particular electron beam deposition.
  • FIG. 27 is a diagram illustrating an example in which a semiconductor light emitting device is fixed to an external electrode, wherein the n-side electrode 80 and the p-side electrode 92 of the semiconductor light emitting device C are respectively external electrodes 1000 and 2000. It is fixed at.
  • the external electrodes 1000 and 2000 may be a conductive part provided in the submount, a lead frame of the package, an electrical pattern formed on the PCB, and the like, provided that the conductive wires are provided independently of the semiconductor light emitting device C. It is not. Bonding using paste, bonding using anisotropic conductive film (ACF), eutectic bonding (e.g.
  • AuSn, AnCu, CuSn), soldering may be used to bond the electrodes 80,92 and the external electrodes 1000,2000.
  • Various methods known in the art such as conjugation used may be used.
  • conjugation used may be used.
  • gold is generally used as the uppermost layer of the electrodes (80,92).
  • the yield of solder may not be good (in the experiment, Reflow temperature (process temperature for melting solder): 275 ° C, Reflow time: Within 3 seconds, solder material amount: 1/3 of bump (electrode) area was used).
  • the p-side electrode 92 includes a lower electrode layer 92-2 and an upper electrode layer 92-3.
  • the lower electrode layer 92-2 may be formed as a stress relaxation layer or a crack prevention layer that prevents cracking when the semiconductor light emitting device is fixed to an external electrode.
  • the upper electrode layer 92-3 may be a lower electrode layer 92. It may be formed of a burst prevention layer for preventing the burst of -2).
  • the lower electrode layer 92-2 may be formed as a reflective layer that reflects light passing through the non-conductive reflective film 91.
  • the upper electrode layer 92-3 may be formed as a barrier layer that prevents the solder material from penetrating into the semiconductor light emitting device during bonding. The lower electrode layer 92-2 and the upper electrode layer 92-3 may be formed by various combinations of these functions.
  • a metal having high reflectance such as Al or Ag may be used as the lower electrode layer 92-2, and a material such as Al or Ag having a high thermal expansion coefficient may be used in view of crack prevention function (linear thermal expansion coefficient).
  • Al is most preferred in many respects.
  • the upper electrode layer 92-3 may be formed of a material such as Ti, Ni, Cr, W, or TiW from the viewpoint of anti-burst and / or diffusion prevention, and is not particularly limited as long as the metal has such a function. Do not.
  • the electrode 92 may further include a contact layer 92-1.
  • the contact layer 92-1 may be formed of a metal such as Cr, Ti, or the like, and is not particularly limited as long as the contact layer 92-1 has a higher bonding force than the lower electrode layer 92-2. It is common to form thinner films (eg Cr of 20 kPa), as absorption has to be reduced. At this time, the contact layer can be removed if the lower electrode layer can have a bonding force.
  • the contact layers 92-1 d may be omitted, and the non-conductive reflecting film 91 and the lower electrode layer 92-3 may be omitted by appropriately adjusting the deposition conditions (deposition method, deposition pressure, deposition temperature, etc.) of the electrode 92. ) Can increase the bond between. It is not preferable to provide it from a viewpoint of light reflection efficiency.
  • the p-side electrode 92 has a top layer 92-4.
  • the uppermost layer 92-4 is generally made of a metal having good adhesion, excellent electrical conductivity, and strong oxidation resistance.
  • Au, Sn, AuSn, Ag, Pt, and alloys thereof or combinations thereof may be used, and are not particularly limited as long as these conditions are satisfied.
  • the p-side electrode 92 introduces a lower electrode layer 92-2 which functions as a crack prevention layer of 1000 kPa or more, preferably 5000 kPa or more (by introducing a metal layer having a high thermal expansion coefficient (for example, Al)).
  • a metal layer having a high thermal expansion coefficient for example, Al
  • the thermal expansion coefficient is large to prevent it from protruding or bursting.
  • an Al electrode formed thicker than 1000 kV (The arrow which popped out at the time of operation) was shown.) It has a structure which introduce
  • the upper electrode layer 92-3 also serves as a diffusion preventing function, and Ni and Ti are particularly suitable.
  • Ni and Ti are particularly suitable.
  • it is thinner than 1000 GPa the function as a crack prevention layer will fall.
  • the p-side electrode 92 dp is provided with the plurality of lower electrode layers 92-2, it is not bad to use a thickness thinner than this.
  • the thickness of the upper electrode layer 92-3 may be selected in consideration of the thickness of the lower electrode layer 92-2, and when the thickness of the upper electrode layer 92-3 is greater than 3 ⁇ m, it is unnecessary or may hinder the electrical characteristics of the semiconductor light emitting device.
  • the uppermost layer 92-4 when the uppermost layer 92-4 is provided, when the uppermost layer 92-4 is thick when it is fixed to the external electrode by soldering, an excessive amount of voids (Void) may be formed to weaken the bonding force of the connection site. have.
  • the top layer 92-4 preferably has a thickness of less than 5000 mm 3. 35 shows the DST results according to the thickness of the uppermost layer 92-4.
  • Excellent performance was achieved in the thickness of 1000 ⁇ ⁇ 1500 ⁇ , and relatively poor at 8000 ⁇ . It is desirable to have a thickness of less than 5000 mm to maintain a value of 2500 to 3000 or more. On the other hand, in order to exhibit a function when provided, it is good to have thickness of 100 microseconds or more.
  • FIG. 32 is a view showing a change in the production yield according to the thickness of the electrode or bump according to the present disclosure
  • the experiment is Cr (10 ⁇ )-n-pair (s) Al (5000 ⁇ ) / Ni (3000 ⁇ )-Au (8000 ⁇ ) This was done by changing the thickness of the sub-layers based on the structure of and tested for soldering (lead free).
  • the electrodes 80 and 92 had a thickness of 2 ⁇ m, the production yield was 50%, and the production yield reached almost 100% at the thickness of 2.5 ⁇ m.
  • a pattern is used for the electrodes 80 and 92 of the type shown in FIGS. 13 and 29, but has a valid meaning even when other types of patterns are used.
  • the electrodes 80 and 92 In view of the area occupied by the electrodes 80 and 92, the electrodes 80 and 92 must cover at least 50% of the area of the non-conductive reflecting film 91 so that the electrodes 80 and 92 can be more effectively coped with from the thermal shock generated during bonding. do.
  • FIG 33 is a view showing another example of an n-side electrode and / or p-side electrode configuration according to the present disclosure, in which the opening 102 is filled by the p-side electrode 92 so that the electrical connection 94 is connected to the p-side electrode ( 92).
  • the light passing through the non-conductive reflective film 91 may be reflected by the lower electrode layer 92-2, thereby reducing the absorption of light by the electrical connection 94.
  • the electrical connection 94 may be formed separately from the p-side electrode 92 through deposition, plating, and / or conductive paste.
  • Fig. 34 is a view showing still another example of the n-side electrode and / or p-side electrode configuration according to the present disclosure, in which the lower electrode layer 92-2 and the upper electrode layer 92-3 are each repeatedly stacked a plurality of times.
  • the p-side electrode 92 is a contact layer 92-1 (20 kPa thick Cr), four pairs of lower contact layers 92-2 (5000 k thick Al) / top contact layer 92-3 (3000 kPa). Ni) and the uppermost layer 92-4 (1 ⁇ m thick Au). Only one of the lower electrode layer 92-2 and the upper electrode layer 92-3 may be provided with a plurality of circuits. In addition, not all lower electrode layers 92-2 and upper electrode layers 92-3 need to be made of the same material.
  • the lower electrode layer 92-2 may be formed of a combination of Al and Ag.
  • one lower electrode layer 92-2 may be formed of a plurality of metals.
  • a material layer may be provided in addition to the contact layer 92-1, the lower electrode layer 92-2, the upper electrode layer 92-3, and the uppermost layer 92-4.
  • it may have a structure shown in FIG. It is possible to more reliably prevent the lower electrode layer 92-2 from sticking out or popping out through the repeated stack structure.
  • FIG. 36 shows another example of the n-side electrode and / or p-side electrode configuration according to the present disclosure, and the p-side electrode 92 is provided on the non-conductive reflective film 91.
  • the p-side electrode 92 includes a bonding layer 92-5, a barrier layer 92-7, and a light reflection layer 92-6.
  • the bonding layer 92-5 includes at least one of Ni, Cu, NiAg, and Be.
  • the bonding layer 92-5 is a layer bonded to the solder material when bonding to an external electrode using a solder material (eg, soldering).
  • a solder material eg, soldering
  • an alloy may be formed by bonding with the solder material Sn, so that unstable bonding (for example, brittle bonding) may occur.
  • unstable bonding for example, brittle bonding
  • such unstable coupling may hinder the long-term reliability of the semiconductor light emitting device, and may cause a phenomenon that the bonding layer 92-5 is separated with time, and a possibility of failure may increase.
  • even if the bonding layer 92-5 is made of at least one of Ni, Cu, NiAg, and Be, it is also combined with Sn to form an alloy. However, these metals are more stable than Au and are less likely to fail.
  • the p-side electrode 92 has a top layer 92-4 (an antioxidant layer).
  • the uppermost layer 92-4 is generally made of a metal having good adhesion, excellent electrical conductivity, and strong oxidation resistance.
  • Au, Sn, AuSn, Ag, Pt, and alloys thereof or combinations thereof for example, Au / Sn
  • the bonding layer 92-5 is a material different from the top layer 92-4 and the diffusion barrier layer 92-7, other materials other than Ni, Cu, NiAg, and Be described above may be used.
  • the light reflection layer 92-6 reflects the light emitted from the active layer 40 and passing through the nonconductive reflective film 91.
  • the light reflection layer 92-6 may be formed as a stress relaxation layer or a crack prevention layer to prevent cracks when the semiconductor light emitting device is fixed to an external electrode (eg, 1000, 2000 (see FIG. 27)).
  • the bonding layer 92-5 may be formed as a burst prevention layer that prevents the light reflection layer 92-6 from bursting.
  • the bonding layer 92-5 may function to prevent the solder material from penetrating into the semiconductor light emitting device side when bonded to the solder material.
  • the light reflection layer 92-6 and the bonding layer 92-5 may be formed by various combinations of these functions.
  • a metal having high reflectance such as Al or Ag may be used as the light reflection layer 92-6, and a material such as Al or Ag having a high thermal expansion coefficient may be used in view of crack prevention function (linear thermal expansion coefficient).
  • Al 22.2, Ag: 19.5, Ni: 13, Ti: 8.6, unit 10 -6 m / mK).
  • Al is most preferred in many respects.
  • the bonding layer 92-5 is preferably Ni in view of anti-burst and / or diffusion prevention among Ni, Cu, NiAg, and Be described above.
  • the diffusion barrier layer 92-7 includes at least one of Ti, TiW, Cr, Pt, Ta, Mg, and Fe, and the material (eg, Al) of the light reflection layer 92-6 is bonded to the bonding layer. (92-5; e.g. Ni) to prevent diffusion. If the diffusion preventing function is performed, materials other than the above-described materials may be selected as the diffusion barrier layer 92-7 as long as the material is different from the light reflection layer 92-6 and the bonding layer 92-5. In the absence of the diffusion barrier layer 92-7, a material (for example, Al) of the light reflection layer 92-6 penetrates or diffuses into the bonding layer 92-5, thereby bonding or bonding the bonding layer 92-5. Strength may be lowered.
  • the bonding layer 92-5 can prevent the penetration of the bonding material toward the plurality of semiconductor layers 30, 40, and 50, the material of the light reflection layer 92-6 is the bonding layer 92-5. ), The bonding force or strength of the bonding decreases. Therefore, it is preferable that the diffusion barrier layer 92-7 be interposed between the light reflection layer 92-6 and the bonding layer 92-5. On the other hand, the diffusion barrier layer 92-7 may be formed so as to also prevent the burst of the light reflection layer (92-6).
  • the diffusion barrier layer 92-7 is selected as a material having a coefficient of thermal expansion smaller than that of the light reflection layer 92-6, and is formed to a thickness of about 0.1 ⁇ m to 0.3 ⁇ m to protrude the light reflection layer 92-6. Or to prevent it from bursting.
  • the coefficient of thermal expansion may be such that the bonding layer 92-5 ⁇ diffusion barrier layer 92-7 ⁇
  • the electrode 92 further includes a contact layer 92-1.
  • the contact layer 92-1 may be formed of a metal such as Cr, Ti, or the like, and is not particularly limited as long as it has a higher bonding force than the light reflection layer 92-6.
  • light by the contact layer 92-1 is not limited. It is common to form thinner films (eg Cr of 20 kPa), as absorption has to be reduced. In this case, the contact layer 92-1 may be removed if the light reflection layer 92-6 may have a required bonding force.
  • the contact layer 92-1 may be omitted and the non-conductive reflecting film 91 and the light reflecting layer 92-6 may be adjusted by appropriately adjusting the deposition conditions (deposition method, deposition pressure, deposition temperature, etc.) of the electrode 92. It can increase the bond between the liver. In view of light reflection efficiency, the contact layer 92-1 may not be provided.
  • a light reflection layer 92-6 which functions as a crack prevention layer of 1000 kPa or more, preferably 5000 kPa or more, is introduced (a metal layer having a high thermal expansion coefficient (for example, Al) is introduced.
  • a metal layer having a high thermal expansion coefficient for example, Al
  • the coefficient of thermal expansion of the light reflection layer 92-6 is large, in order to prevent the light reflection layer 92-6 from protruding or bursting (in Fig. 31, an Al electrode formed thicker than 1000 mW operates the element. The figure (arrow) which popped out at the time was shown.),
  • the bonding layer 92-5 which has a coefficient of thermal expansion smaller than the light reflection layer 92-6 is formed of Ni.
  • the thermal expansion coefficient of the diffusion barrier layer 92-7 is smaller than that of the light reflection layer 92-6, and the diffusion barrier layer 92-7 has a thickness of 0.1 ⁇ m to 0.3 ⁇ m, and the Ti, TiW, Cr, Pt, Ta, Mg described above.
  • the diffusion barrier layer 92-7 may have a burst prevention function and a diffusion prevention function.
  • the material or thickness of the bonding layer 92-5 may be more freely selected. For example, it is possible to use 1 micrometer Al (light reflection layer), 0.1 micrometer-0.3 micrometers diffusion prevention layer, and 2 micrometers Ni (bonding layer).
  • the thickness of the diffusion prevention layer 92-7 is 0.1 micrometer-0.3 micrometer. If it is too thin, the diffusion prevention function is weak. If it is too thick, the materials such as Ni, Ti, and W in the deposition process increase the temperature in the deposition equipment, which may cause problems in the PR LIFT OFF process.
  • each light reflection layer 92-6 is also not bad.
  • the thickness of the bonding layer 92-5 may be selected in consideration of a thickness of 0.3 ⁇ m to 1 ⁇ m of the light reflection layer. If the thickness of the bonding layer 92-5 is greater than 3 ⁇ m, the bonding layer 92-5 may be unnecessary or may hinder the electrical characteristics of the semiconductor light emitting device.
  • the opening 102 is filled by the p-side electrode 92
  • the electrical connection 94 is a p-side electrode ( 92).
  • the light passing through the non-conductive reflecting film 91 is reflected by the light reflection layer 92-6, thereby reducing the absorption of light by the electrical connection 94.
  • the electrical connection 94 may be formed separately from the p-side electrode 92 through deposition, plating, and / or conductive paste.
  • n-side electrode and / or p-side electrode configuration according to the present disclosure, wherein the p-side electrode 92 is a contact layer 92-1, and a lower electrode layer 92 repeatedly stacked a plurality of times. -2) / upper electrode layer 92-3, light reflection layer 92-6, diffusion barrier layer 92-7, bonding layer 92-5, and top layer 92-4.
  • the lower electrode layer 92-2 and the upper electrode layer 92-3 are repeatedly stacked in plural times.
  • the p-side electrode 92 is a contact layer 92-1 (20 kPa thick Cr), three pairs of lower contact layers 92-2 (3000-10000 kPa Al) / top contact layer 92-3 Ni) 1000 to 3000 microns thick, light reflection layer 92-6 (3000 to 10000 microns thick Al), diffusion barrier layer 92-7; Ti, TiW, Cr, Pt, Ta, Mg, and Fe 1000 to 3000 microns thick; At least one), a bonding layer 92-5 (Ni having a thickness of 1000 to 3000 GPa), and a top layer 92-4 (A Au having a thickness of 1 ⁇ m or less).
  • the lower electrode layer 92-2 and the upper electrode layer 92-3 may be provided with a plurality of circuits.
  • the lower electrode layer 92-2 may be formed of a combination of Al and Ag.
  • one lower electrode layer 92-2 may be formed of a plurality of metals.
  • a material layer may be provided in addition to the contact layer 92-1, the lower electrode layer 92-2, the upper electrode layer 92-3, and the uppermost layer 92-4.
  • the electrode 92 shown in FIG. 38 may have a structure shown in FIG. 37. It is possible to more reliably prevent the lower electrode layer 92-2 from sticking out or popping out through the repeated stack structure.
  • n-side electrode and / or p-side electrode configuration according to the present disclosure, wherein the p-side electrode 92 includes a contact layer 92-1, a light reflection layer 92-6, and diffusion. Barrier layer 92-7, bonding layer 92-5, additional bonding layer 92-8, and top layer 92-4 (an antioxidant layer). An additional bonding layer 92-8 is formed between top layer 92-4 and bonding layer 92-5.
  • the additional bonding layer 92-8 is a soldering layer made of tin (Sn) or containing tin.
  • bonding layer 92-5 By using soldering (Sn soldering, Pb soldering, etc.) in this example, bonding layer 92-5, and further bonding layer 92-8, can be bonded with the bonding material.
  • soldering soldering, Pb soldering, etc.
  • the bonding material may be bonded to the bonding layer 92-5 as well as the additional bonding layer 92-8.
  • the diffusion barrier layer 92-7 prevents the light reflection layer 92-6 material (eg, Al) from penetrating from the light reflection layer 92-6 to the bonding layer 92-5.
  • the bonding layer 92-5 may serve as a bonding layer 92-5 and at the same time prevent the bonding material from diffusing to the plurality of semiconductor layers 30, 40, and 50.
  • As the additional bonding layer 92-8 a soldering layer containing tin described in FIGS. 29, 35, etc. may be applied.
  • FIG. 40 is a view showing another example of an n-side electrode and / or p-side electrode configuration according to the present disclosure, wherein the p-side electrode 92 is a contact layer 92-1, and a lower electrode layer 92 repeatedly stacked a plurality of times. -2) / upper electrode layer 92-3, light reflecting layer 92-6, diffusion barrier layer 92-7, bonding layer 92-5, further bonding layer 92-8, and top layer 92 -4).
  • the example illustrated in FIG. 38 may be applied to the repeatedly stacked lower electrode layer 92-2 / upper electrode layer 92-3. Bonding layer 92-5, and further bonding layer 92-8 may be applied to the example described in FIG.
  • FIG. 41 is a view showing still another example of the n-side electrode and / or p-side electrode configuration according to the present disclosure, wherein the p-side electrode 92 is a contact layer 92-1, the lower electrode layer 92 repeatedly stacked a plurality of times -2) / upper electrode layer 92-3, light reflection layer 92-6, diffusion barrier layer 92-7, bonding layer 92-5, and additional bonding layer 92-8T.
  • the top layer in this example is an additional bonding layer 92-8T, which further comprises a soldering layer that is substantially free of gold and contains tin and is heat treated.
  • the meaning of containing tin includes the case of only tin.
  • the soldering layer means to be bonded to the external electrode by soldering.
  • the solder used for soldering is a lead-free solder paste, which contains grains and fluxes containing indium, tin, silver, copper, impurities, and the like. For example, about 97% tin, about 3% silver, and the like. Tin is the main component.
  • the melting point of tin is 220 ° C.
  • the soldering process may be performed at 230 ° C. to 267 ° C., at about 240 degrees.
  • the heat treatment temperature may be a temperature below and above the melting point of tin. For example, heat processing temperature is 100 degreeC-400 degreeC.
  • the additional bonding layers 92-8T are heat treated to significantly improve the bonding strength. It is assumed that gold is not included between the additional bonding layer 92-8T containing tin and the solder, which is advantageous in improving soldering strength in part, and further, nickel under the additional bonding layer 92-8T. It is estimated that the bonding force with the bonding layer 92-5 made of (Ni) is improved due to the heat treatment.
  • the solder include Sn, PbSn, PbSnAg, PbInAb, PbAg, SnPbAg, PbIn, CdZn, and the like. Therefore, it is also conceivable to form the additional bonding layer 92-8T with Pb, Ag, In, Ab, Cd, Zn, etc. in addition to tin and to heat-treat.
  • FIG 44 and 45 are views for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • a plurality of semiconductor layers 30, 40, and 50 are formed between the semiconductor layer 30 and the second semiconductor layer 50 and include an active layer 40 that generates light through recombination of electrons and holes.
  • Top structures 80, 70, and 91 are formed having a top layer 91 that covers the top layer 91.
  • the upper structures 80, 70, and 91 may be formed, for example, after the plurality of semiconductor layers 30, 40, and 50 are formed, and remain on and side surfaces of the plurality of semiconductor layers 30, 40, and 50. It means structure.
  • the upper layer 91 may include an insulating layer or a dielectric layer that may cover the top or side surfaces of the plurality of semiconductor layers 30, 40, and 50.
  • the upper layer 91 may include a metal layer.
  • At least one electrode 80, 70 may be formed on the upper layer 91 to be electrically connected to the plurality of semiconductor layers 30, 40, and 50 (see FIGS. 45A and 45B).
  • the upper layer 91 may be formed to expose at least one electrode 80, 70 (see FIGS. 45C and 45D).
  • a plurality of semiconductor light emitting chips 105 having the plurality of semiconductor layers 30, 40, 50 and the upper structures 80, 70, and 91 are formed on the growth substrate 10.
  • Each semiconductor light emitting chip 105 may include a growth substrate 10.
  • the upper structures 80, 70 and 91 and the plurality of semiconductor layers 30, 40 and 50 are shown. And at least a portion of the growth substrate 10 is removed to form a groove 99.
  • the upper layer 91 may be an insulating layer, a dielectric layer, or a metal layer.
  • the plurality of semiconductor light emitting chips 101 are cut along the cutting lines SCL1 and SCL2, as shown in FIG. 44, to form individual semiconductor light emitting devices 101. .
  • the breaking process may be performed for cutting, or the scribing and breaking process may be performed.
  • an impact is applied along the cutting lines SCL1 and SCL2, so that the impact overlaps at the intersection.
  • Weighted impacts at the intersections cause cracks in the upper structures 80, 70, 91, for example, the upper layer 91, or damage a portion of the upper layer 91, and the cracks propagate toward the semiconductor light emitting chip 105. The defect may occur.
  • At least a portion of the upper structures 80, 70, 91, the plurality of semiconductor layers 30, 40, 50, and the growth substrate 10 are removed to form the grooves 99.
  • damage due to overlapping impacts and defects due to cracks are significantly reduced.
  • FIGS. 44 and 45C are diagrams showing examples of a cross section taken along a line A-A in FIG. 44
  • FIGS. 45B and 45D are diagrams showing examples of a cross section taken along a line B-B in FIG.
  • a process of separating or partitioning the plurality of semiconductor light emitting chip regions 104 may be added before the upper structures 80, 70, and 91 are formed.
  • a portion of the plurality of semiconductor layers 30, 40, and 50 may be removed along the cutting lines SCL1 and SCL2 so that the plurality of semiconductor layers 304050 may be divided or divided into the plurality of semiconductor light emitting chip regions 104. do.
  • Each semiconductor light emitting chip region 104 is formed in each semiconductor light emitting chip region 104 as described later.
  • the upper layer 91 may be formed to cover the semiconductor light emitting chip region 104 and the plurality of semiconductor light emitting chip regions 104. As shown in FIG. 45B, the upper layer 91 may be removed at the intersection of the cutting lines SCL1 and SCL2 to form a groove 99 exposing the plurality of semiconductor layers 30, 40, and 50. On the other hand, as shown in FIG. 45C, as shown in FIG. 45D, without the division or division into the plurality of semiconductor light emitting chip regions 104, the grooves 99 are formed only at the intersections, and the individual semiconductor light emitting devices ( 101). As shown in FIG. 45D, not only the upper layer 91 at the intersection but also a portion of the plurality of semiconductor layers 30, 40, 50 may be removed. In the examples shown in FIGS.
  • the width of the groove 99 formed at the intersection point is larger than the width of the cut in the cutting process, and the shape of the groove 99 is an island shape so as not to expose the semiconductor light emitting chip 105. It can be formed as.
  • the shape of the groove 99 can be changed, such as circular or polygonal. Also, an example in which the groove 99 is formed in a cross shape (+) along the cutting lines SCL1 and SCL2 may be considered (see FIG. 44B).
  • the upper structures 80, 70, and 91 are stacked at the intersections of the cutting lines SCL1 and SCL2, the upper structures 80, 70, At least a portion of 91 may be removed, or at least a portion of the upper structures 80, 70, 91 and the plurality of semiconductor layers 30, 40, 50 may be removed, or the upper structures 80, 70, 91, a plurality of semiconductors may be removed. Layers 30, 40, 50, and at least a portion of growth substrate 10 may be removed.
  • the plurality of semiconductor layers 30, 40, 50 when the growth substrate 10 and the plurality of semiconductor layers 30, 40, 50 are stacked at the intersection and the upper structures 80, 70, 91 are not stacked, the plurality of semiconductor layers 30, 40, At least a portion of the 50 may be removed, or the plurality of semiconductor layers 30, 40, 50, and at least a portion of the growth substrate 10 may be removed.
  • the plurality of semiconductor layers 30, 40, 50 and the upper structures 80, 70, 91 are not stacked on the growth substrate 10 at the intersection, at least a portion of the growth substrate 10 may be removed.
  • the upper structures 80, 70, 91, the plurality of semiconductor layers 30, 40, 50, and the growth substrate 10 may not be removed at the cut lines SCL1 and SCL2 other than the intersection point.
  • the upper structures 80, 70, 91, the plurality of semiconductor layers 30, 40, 50, and the growth substrate 10 may be removed from the cutting lines SCL1 and SCL2 other than the intersection point.
  • the upper structures 80, 70 and 91, the plurality of semiconductor layers 30, 40 and 50, and the growth substrate are compared with the cutting lines SCL1 and SCL2 other than the intersection points. At least a portion of 10 may be further removed.
  • FIG. 46 is a diagram for describing examples of a semiconductor light emitting device according to the present disclosure, and illustrates an individual semiconductor light emitting device 101 formed by cutting along cutting lines SCL1 and SCL2. Side surfaces of the semiconductor light emitting device 101 are cut surfaces formed during cutting, and the cut surfaces meet to form corners. Due to the grooves 99 formed at the intersections of the cutting lines SCL1 and SCL2, cutouts are formed at the corners of the individual semiconductor light emitting devices 101 as part of the grooves 99 which are laterally and upwardly opened as shown in FIG. The cutout portion 99 remains. Accordingly, the cutout portion 99 may have a portion of a circle, a portion of a polygon, or an L shape (see FIG. 46B) when viewed in plan view.
  • the groove 99 and the cutout portion 99 are given the same reference numerals.
  • the cutout part 99 may be formed not only at the edge but also at the side (cutting side) of the semiconductor light emitting device 101, and as shown in FIG. 46C, the asymmetry may be distinguished. It may also be formed as.
  • the semiconductor light emitting device 101 may include a substrate 10, a plurality of semiconductor layers 30, 40, 50, an upper layer 91, and electrodes 80, 70.
  • the cutout part 99 may be formed by removing a portion of the upper layer 91 and the plurality of semiconductor layers 30, 40, and 50.
  • FIG. 48 a plurality of semiconductor layers 30, 40, and 50 are formed on a growth substrate 10. 47, portions of the plurality of semiconductor layers 30, 40, and 50 are removed along the cutting lines SCL1 and SCL2 and divided or divided into the semiconductor light emitting chips 105.
  • the plurality of semiconductor layers 30, 40, and 50 may include a buffer layer (not shown) formed on the substrate 10, a first semiconductor layer 30 having a first conductivity (eg, Si-doped GaN), and different from the first conductivity.
  • An active layer 40 eg, an InGaN / (In) GaN multi-quantum well structure.
  • Each of the plurality of semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer may be omitted.
  • FIGS. 48A, 48C, and 48E show examples of cross sections taken along line C-C in FIG. 47
  • FIGS. 48B, 48D, and 48F show examples of cross sections cut along line D-D in FIG.
  • the electrodes 80 and 70 are omitted.
  • An opening 63 (see FIG. 51) may be formed in each of the semiconductor light emitting chips 105 by mesa etching exposing the first semiconductor layer 30. Alternatively, the openings 63 may be formed together in the process of forming the grooves 99. Thereafter, a transparent conductive film 60 is formed on each semiconductor light emitting chip 105.
  • a light absorption prevention film 41 is formed between the second semiconductor layer 50 and the transparent conductive film 60 in response to the electrical connection 71 or the branch electrode 75 to be described later (see FIG. 51B).
  • the light absorption prevention layer 41 may have only a function of reflecting some or all of the light generated from the active layer 40, and prevents current from flowing directly below the electrical connection 71 or the branch electrode 75 ( current blocking) only, or both functions.
  • the branch electrode 75 and the island pad 72 are formed on the light-transmitting conductive layer 60 to correspond to the light absorption prevention layer 41, and the branch electrode 85 is formed on the first semiconductor layer 30 exposed by mesa etching. ) Is formed.
  • the branch electrodes 85 and 75 may be omitted depending on the specification of the semiconductor light emitting device.
  • an insulating reflective film 91 is formed to cover between each semiconductor light emitting chip region 104 and the plurality of semiconductor light emitting chip regions 104.
  • the insulating reflective film 91 reflects light from the active layer 40.
  • the insulating reflective film 91 preferably has a multi-layered structure, and at least a side of the reflective reflective film 91 that reflects light in order to reduce light absorption by the metal reflective film is formed of a non-conductive material. Insulating here means that the insulating reflecting film 91 is not used as a means of electrical conduction, and does not necessarily mean that the entire insulating reflecting film 91 should be made of only a non-conductive material.
  • the insulating reflective film 91 may include a distributed Bragg reflector (91a), an omni-directional reflector (ODR), and the like.
  • the insulating reflective film 91 is also formed between the plurality of semiconductor light emitting chip regions 104, and the insulating reflective film 91 is removed at the intersections of the cutting lines SCL1 and SCL2 to form the grooves 99.
  • the insulating reflective film 91 may be partially removed, the removal of the insulating reflective film 91 may expose the first semiconductor layer 30 (see FIG. 48B), or may expose the growth substrate 10 (FIG. 48D). , 8f). Meanwhile, part of the growth substrate 10 may also be removed (see dotted lines in FIGS. 48B and 8F).
  • electrodes 80 and 70 and electrical connections 81 and 71 are formed in each semiconductor light emitting chip region 104 to form a plurality of semiconductor light emitting chips 105, and FIGS. 49 and 50.
  • the semiconductor light emitting device 101 as shown in FIG. 51 is formed by cutting along the cutting lines SCL1 and SCL2.
  • FIG. 51B illustrates an example of a cross section taken along the line EE of FIG. 51A.
  • the insulating reflective film 91 in this example includes a dielectric film 91b, a distributed Bragg reflector 91a, and a clad film 91c.
  • the distributed Bragg reflector 91a is formed on the dielectric film 91b.
  • the distributed Bragg reflector 91a is formed by stacking a pair of SiO 2 and TiO 2 a plurality of times, for example.
  • the distribution Bragg reflector 91a may be formed by a combination of a high refractive index material such as Ta 2 O 5 , HfO, ZrO, SiN, and a dielectric thin film (typically SiO 2 ) having a lower refractive index.
  • the distributed Bragg reflector 91a may consist of repeated stacks of SiO 2 / TiO 2 , SiO 2 / Ta 2 O 2 , or SiO 2 / HfO pairs, and SiO 2 / TiO 2 reflects blue light.
  • the efficiency is good, and for UV light, SiO 2 / Ta 2 O 2 , or SiO 2 / HfO will have good reflection efficiency.
  • the thickness of each layer is based on an optical thickness of 1/4 of the wavelength of light emitted from the active layer 40, It is desirable to go through an optimization process in consideration of reflectance and the like, and the thickness of each layer does not necessarily have to maintain 1/4 optical thickness of the wavelength.
  • the number of stacks of the pair is suitable for 4 to 40 pairs.
  • the Distribution Bragg reflector 91a is composed of a SiO 2 / TiO 2 pair repeat structure
  • the Distribution Bragg reflector 91a is characterized by physical vapor deposition (PVD), in particular, electron beam deposition (E-Beam Evaporation) and sputtering. It is preferable to form by Sputtering or Thermal Evaporation.
  • the clad film 91c may be made of a metal oxide such as Al 2 O 3 , a dielectric film 91b such as SiO 2 , SiON, MgF, CaF, or the like.
  • the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c serve as an optical waveguide as the insulating reflective film 91, and have a total thickness of 1 ⁇ m to 8 ⁇ m, or 4 ⁇ m to 5 ⁇ m.
  • a first electrical connection 81 is formed through the insulating reflective film 91 and is electrically connected to the first semiconductor layer 30, and a second electrical connection 71 is electrically connected to the second semiconductor layer 50. do.
  • a first electrode 80 connected to the first electrical connection 81 and a second electrode 70 connected to the second electrical connection 71 are formed on the insulating reflective film 91.
  • the cutting process is performed.
  • the scribing and / or breaking process can proceed.
  • Chemical etching processes may be added.
  • the scribing process uses a laser or a cutter, and the semiconductor light emitting element preliminarily cut through the breaking process performed after the scribing process is divided into individual semiconductor light emitting elements ( 101) can be completely separated.
  • FIG. 49 is a view for explaining an example of stealth dicing.
  • problems such as debris, device damage, loss of semiconductor material, etc. are cut by cutting from the inside of the growth substrate 10. Can overcome them.
  • FIGS. 49A and 50 the bottom surface of the growth substrate 10 is focused and a perforation occurs in the growth substrate 10 by the laser 2, and the plurality of semiconductor layers 30, The tapes attached to the 40 and 50 sides are expanded and separated into individual semiconductor light emitting devices 101.
  • perforation occurs only inside the growth substrate 10 and the surface of the substrate is not damaged at all.
  • the spacing or width of the cutting by stealth dicing is much reduced than when cutting with a blade (see left of FIG. 49B).
  • the cut lines SCL1 and SCL2 outside the intersection point receive one channel scribing, and as shown in FIG. 50B, both the one and two channel scribe points are received at the intersection point.
  • the insulating reflective film 91 is removed at the intersection, cracks and damage are prevented in the insulating reflective film 91 due to scribing overlapped at the intersection, and the crack or damage of the insulating reflective film 91 is reduced to the semiconductor light emitting chip ( The defects such as propagation toward the 105 side or the insulating reflective film 91 being peeled down are greatly reduced.
  • FIG. 52 and 53 are diagrams for describing still another example of a semiconductor light emitting device and a method of manufacturing the same according to the present disclosure, and show an example of a method of manufacturing a lateral device.
  • FIG. 53A is an example of a cross section taken along the F-F line in FIG. 52
  • FIG. 53B is an example of a cross section taken along the G-G line in FIG. 52.
  • a plurality of semiconductor layers 30, 40, and 50 are formed on the growth substrate 10 and divided into a plurality of semiconductor light emitting chip regions 104. In this partitioning process, a portion of the second semiconductor layer 50 and the active layer 40 is removed to expose the first semiconductor layer 30 on which the first electrode 80 (n-side electrode) is to be formed.
  • the first electrode 80 and the second electrode 70 are formed. Thereafter, a dielectric layer 90 (protective film) covering the semiconductor light emitting chip region 104 and the plurality of semiconductor light emitting chip regions 104 is formed to expose the first electrode 80 and the second electrode 70. Thereafter, the groove 99 is formed by removing the dielectric layer 91 at the intersection of the cutting lines SCL1 and SCL2. In this case, a portion of the first semiconductor layer 30 may be further removed from the groove 99, and the growth substrate 10 may be exposed. Next, the growth substrate 10 is cut along the cutting lines SCL1 and SCL2 and separated into individual semiconductor light emitting devices 101. The grooves 99 are formed at the intersections of the cutting lines SCL1 and SCL2 so that damage to the upper structures 80, 70 and 90 such as the dielectric layer 90 is suppressed during the scribing and breaking process.
  • FIG. 55 is a view illustrating an example of a semiconductor light emitting device according to the present disclosure
  • FIG. 56 is a view illustrating an example of a cross section taken along line AA in FIG. 55
  • the semiconductor light emitting device according to the present embodiment includes a plurality of semiconductors.
  • the plurality of semiconductor layers 30, 40, and 50 may include a first semiconductor layer 30 having a first conductivity, a second semiconductor layer 50 having a second conductivity different from the first conductivity, and a first semiconductor layer 30. ) Between the second semiconductor layer 50 and the second semiconductor layer 50 to generate light by recombination of electrons and holes.
  • the first electrode 80 supplies one of electrons and holes to the first semiconductor layer 30, and the second electrode 70 supplies the other one of electrons and holes to the second semiconductor layer 50.
  • the weir 98 is formed to be electrically separated from the first electrode 80 and the second electrode 70 between the first electrode 80 and the second electrode 70.
  • the weir 98 prevents the occurrence of such electromigration, prevents or prevents the volts by preventing or hinders the movement of the metal during the electromigration, and prevents damage to the solder bumps 7 or the electrodes 80 and 70. Can be.
  • the semiconductor light emitting device is not limited to a flip chip, and a lateral chip or a vertical chip is also applicable. Not only the electromigration between the solder bumps 7 but also the electromigration between the solder bumps 7 and the wire bonding can be applied.
  • the semiconductor light emitting device may be a chip such as a blue semiconductor light emitting chip (eg, 450 nm), an NUV semiconductor light emitting chip, a green semiconductor light emitting chip, or a red semiconductor light emitting chip according to the composition of the plurality of semiconductor layers 30, 40, and 50.
  • a group III nitride semiconductor light emitting device a plurality of semiconductor layers 30, 40, and 50 are formed on the growth substrate 10.
  • the plurality of semiconductor layers 30, 40, and 50 may include a buffer layer (not shown) formed on the growth substrate 10, a first semiconductor layer 30 having a first conductivity (eg, Si-doped GaN), and a first conductivity.
  • the second semiconductor layer 50 having another second conductivity is interposed between the first semiconductor layer 30 and the second semiconductor layer 50 and generates light through recombination of electrons and holes.
  • An active layer 40 eg, an InGaN / (In) GaN multi-quantum well structure.
  • Each of the plurality of semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer may be omitted.
  • the groove 63 may be formed by mesa etching exposing the first semiconductor layer 30 in the process of partitioning the wafer into a plurality of semiconductor light emitting device regions. Thereafter, the transparent conductive film 60 is formed. A mesa etching process may be performed after the transparent conductive film 60 is formed.
  • a light absorption prevention layer 41 may be formed between the second semiconductor layer 50 and the transparent conductive layer 60 in response to the electrical connection 71 or the branch electrode 75 to be described later.
  • the light absorption prevention layer 41 may have only a function of reflecting some or all of the light generated from the active layer 40, and prevents current from flowing directly below the electrical connection 71 or the branch electrode 75 ( current blocking) only, or both functions.
  • branch electrode 75 and the island pad 72 are formed on the light-transmitting conductive layer 60 to correspond to the light absorption prevention layer 41, and the branch electrode 85 is formed on the first semiconductor layer 30 exposed by mesa etching. ) Is formed.
  • the branch electrodes 85 and 75 may be omitted depending on the specification of the semiconductor light emitting device.
  • an insulating reflective film R is formed on the transparent conductive film 60.
  • the insulating reflective film R reflects light from the active layer 40.
  • the insulating reflective film R preferably has a plurality of layers, and at least the side that reflects the light of the insulating reflective film R is formed of a non-conductive material in order to reduce light absorption by the metal reflective film. Insulating means that the insulating reflecting film R is not used as a means of electrical conduction, and does not necessarily mean that the whole of the insulating reflecting film R is made of only a non-conductive material.
  • the insulating reflective film R may include a distributed Bragg reflector 91a, an omni-directional reflector (ODR), or the like.
  • the metal reflective film is provided on the second semiconductor layer 50, the second electrode 70 is provided on the metal reflective film, and the first semiconductor layer 30 and the first electrode 80 exposed by mesa etching. ) May be communicated.
  • the insulating reflective film R includes a dielectric film 91b, a distributed Bragg reflector 91a, and a clad film 91c.
  • the distributed Bragg reflector 91a is formed on the dielectric film 91b.
  • the distributed Bragg reflector 91a is formed by stacking a pair of SiO 2 and TiO 2 a plurality of times, for example.
  • the distribution Bragg reflector 91a may be formed by a combination of a high refractive index material such as Ta 2 O 5 , HfO, ZrO, SiN, and a dielectric thin film (typically SiO 2 ) having a lower refractive index.
  • the distributed Bragg reflector 91a may consist of repeated stacks of SiO 2 / TiO 2 , SiO 2 / Ta 2 O 2 , or SiO 2 / HfO pairs, and SiO 2 / TiO 2 reflects blue light. The efficiency is good, and for UV light, SiO 2 / Ta 2 O 2 , or SiO 2 / HfO will have good reflection efficiency.
  • the clad film 91c may be made of a metal oxide such as Al 2 O 3 , a dielectric film 91b such as SiO 2 , SiON, MgF, CaF, or the like.
  • the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c serve as an optical waveguide as the insulating reflective film R, and have a total thickness of 1 ⁇ m to 8 ⁇ m, or 4 ⁇ m to 5 ⁇ m.
  • Openings are formed in the insulating reflective film R, and electrical connections 81 and 71 and electrodes 80 and 70 are formed.
  • the first electrical connection 81 penetrates the insulating reflective film R and is electrically connected to the first semiconductor layer 30 through the grooves 63 formed in the plurality of semiconductor layers 30, 40, and 50.
  • the second electrical connection 71 penetrates through the insulating reflective film R and is electrically connected to the second semiconductor layer 50.
  • the first electrode 80 connected to the first electrical connection 81 and the second electrode 70 connected to the second electrical connection 71 are formed on the insulating reflective film R. Electrical connections 81 and 71 and electrodes 80 and 70 may be formed together. Thereafter, the wafer is separated for each semiconductor light emitting device by a cutting process.
  • the weir 98 may be formed together in the process of forming the first electrode 80 and the second electrode 70.
  • the weir 98 may be made of the same material as the first electrode 80 and the second electrode 70.
  • the weir 98 may include at least some of the layers of the plurality of layers of the electrodes 80 and 70.
  • the first electrode 80 and the second electrode 70 are made of a contact layer made of Cr, Ti, Ni, or an alloy thereof, and a reflective metal layer such as Al or Ag on the contact layer for stable electrical contact. It may include a reflective layer.
  • the electrodes 80 and 70 may be contact layers (e.g., Cr, Ti, etc.) / Reflective layers (e.g., Al, Ag, etc.), diffusion barrier layers (e.g., Ni, etc.), bonding layers (e.g., Au / Sn alloys, Au / Sn / Cu alloys, Sn, heat-treated Sn, etc.).
  • the weir 98 may be formed by a process separate from the formation of the electrodes 80 and 70, and the material of the weir 98 may be made of a dielectric (insulator) in addition to the conductor (see FIG. 61A).
  • the weir 98 extends between an edge of the first electrode 80 and an edge of the second electrode 70 opposite each other, preferably as shown in FIG. 55. Likewise, the weir 98 extends along an edge of the first electrode 80 and an edge of the second electrode 70 which face each other. In particular, in the example in the width from the first electrode 80 to the second electrode 70 in the direction, the width of the weir 98 is smaller than the width of the first electrode 80, the second electrode 70 It is formed to be smaller than the width of). As described later in FIG. 58, the present inventors found that the smaller the area of the metal on the insulating reflective film R, the higher the luminance.
  • the weir 98 is formed in a long strip shape, and the edges of the electrodes 80 and 70 opposing each other. It can be formed longer.
  • a floating metal or a dielectric is formed between the first electrode 80 and the second electrode 70 in a different form from the weir 98, for example, in the form of an island, filaments due to electromigration, or It cannot block the progress of atoms. Therefore, it is preferable to form in the form of the weir 98 like this example.
  • the weir 98 extends approximately in the center between the first electrode 80 and the second electrode 70.
  • the weir 98 may be formed on the plurality of semiconductor layers 30, 40, and 50 except for the edges of the mesa-etched semiconductor light emitting devices.
  • a weir 98 may be formed to the edge end.
  • a protrusion 98c extending from the weir 98 may be added, and the protrusion 98c may be used to distinguish the directions of the first electrode 80 and the second electrode 70, or may be separated from the first electrode 80. It may also affect the electric field between the second electrode 70.
  • the bonding is prevented.
  • the dam 98 may be formed so as not to contact the substrate 500 at a height substantially similar to that of the electrodes 80 and 70, or lower than the electrodes 80 and 70.
  • the weir 98 does not contact the substrate 500. It may be formed to a height that does not, and in some cases may be formed higher than the electrode (80,70).
  • FIG. 57 is a view for explaining an example in which the dam suppresses electromigration between the first electrode and the second electrode, and the first electrode 80 and the second electrode 70 are connected to the substrate 500 by the solder bumps 7.
  • the solder bumps 7 can be used as ball-shaped bumps, which has the advantage that more connection points can be formed in the same area than wire bonding.
  • an electromigration phenomenon may occur in the solder bumps 7 due to the electric field E1.
  • the solder bumps 7 may be alloys of two or more materials.
  • the solder bumps 7 may include Sn, Pb, Ag, Cu, or the like depending on the type of solder. For example, as described with reference to FIG. 54, by the electromigration of these atoms, as shown in FIG. 57A, the filament 5 grows on the surface of the insulating reflective film R, or the atoms (ions) move, As a result, insulation breakdown may occur between the first electrode 80 and the second electrode 70.
  • a weir 98 is formed between the first electrode 80 and the second electrode 70.
  • the growth of the filament 5 or the movement of atoms may occur by electromigration, but the weir 98 may prevent the growth of the filament 5 or the movement of atoms, or time. Can serve as a retarding wall. As a result, the reliability of the semiconductor light emitting element when using for a long time is improved.
  • FIG. 58 is a view for explaining the relationship between the area of an electrode and the luminance of a semiconductor light emitting device.
  • the present inventors have found that the size of the electrodes 70 and 80 placed thereon when an insulating reflective film R including DBR is used. It was confirmed that the light reflectance by the insulating reflective film (R) increases as the area is reduced, and these experimental results provided an instrument in which the size of the electrodes 70 and 80 is reduced to a range that was not conceivable in the prior art in the present disclosure. The width of the weir 98 did not need to be formed unnecessarily wide.
  • the distribution Bragg reflector 91a reflects better as light closer to the vertical direction reflects light of approximately 99% or more. However, obliquely incident light L1 and L2 pass through the distribution Bragg reflector 91a and enter the upper surface of the clad film 91c or the insulating reflective film R and are not covered by the electrodes 80 and 70. Although light L1 is almost reflected, some of light L2 incident on electrodes 80 and 70 is absorbed (see Fig. 56).
  • luminance was tested by changing the gap G and the area ratio between the electrodes 80 and 70.
  • the distance G is changed to 150 um (FIG. 58A), 300 um (FIG. 58B), 450 um (FIG. 58C), and 600 um (FIG. 58D). Is constant.
  • the distance (W) between the edges of the semiconductor light emitting element in the direction in which the electrodes 80, 70 face each other is 1200um, the vertical length (c) is 600um, the width (B) of the electrodes 80, 70 is 485,410,335,260um
  • the length A of the electrodes 80 and 70 is constant at 520 um.
  • the area ratio of the planar area of the semiconductor light emitting element to the electrodes 80 and 70 is 0.7, 0.59, 0.48 and 0.38, respectively. If the distance between the electrodes 80 and 70 is 80 um, the area ratio is 0.75. When the areas of the electrodes 80 and 70 are the same, it is found that there is no significant difference in luminance even when the distance between the electrodes 80 and 70 changes.
  • the upper graph in FIG. 58 is a graph showing the results of the experimental examples described.
  • the reference luminance is 100, 106.79 (FIG. 58A), 108.14 (FIG. 58B), 109.14 (FIG. 58C), 111.30 (FIG. 58D).
  • the luminance of was confirmed. It can be seen that the increase in luminance is considerably high. If the area ratio of the electrodes 80 and 70 is smaller than 0.38, there may be further increase in luminance.
  • the width of the weir 98 is smaller than the width of the first electrode 80, the width of the second electrode 70 It is better to make it smaller.
  • the width of the weir 98 may be 10 ⁇ m or less, which may be about the width of the branch electrodes around the bank. As shown in FIG. 55, the weir 98 may have a thin band shape.
  • the weir 98 is preferably 100 ⁇ m or more from the edge of the first electrode 80 and the edge of the second electrode 70 facing each other.
  • FIG. 59 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure
  • FIG. 59B is a diagram illustrating an example of a cross section taken along the line B-B in FIG. 59A.
  • the semiconductor light emitting device includes a branch electrode 75 formed between the plurality of semiconductor layers 30, 40, and 50 and the insulating reflective film R, and a branch electrode 85 formed on the first semiconductor layer 30 exposed by mesa etching.
  • the branch electrode 85 extends below the second electrode 70 below the first electrode 80.
  • the branch electrode 75 includes a first branch 75a and a second branch 75b.
  • the first branch 75a extends below the first electrode 80 under the second electrode 70, and the second branch 75b protrudes from the first branch 75a so as to protrude from the first electrode 80. It extends between the second electrodes 70.
  • a plurality of first branches 75a are formed on the transparent conductive film 60, and the second branches 75b extend from each of the first branches 75a.
  • the insulating reflective film R may have a portion that rises upward.
  • an insulating reflective film R is formed to rise between the first electrode 80 and the second electrode 70 to form a weir 98.
  • 98 is formed long along the second branch 75b.
  • the weir 98 can function as a wall for preventing the progression of the filament 5 due to electromigration or delay the progression time. Therefore, reliability of the semiconductor light emitting device for a long time is improved.
  • FIG. 60 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure
  • FIG. 60B is a diagram illustrating an example of a cross section along the CC line of FIG. 60A.
  • each first branch is illustrated.
  • Each second branch 75b extending from the 75a is connected to each other and extends long between the first electrode 80 and the second electrode 70.
  • an insulator 44 is interposed between the branch electrode 85 and the second branch 75b.
  • the branch electrode 85 may be formed first, and the insulator 44 may be formed together when the light absorption prevention film 41 described with reference to FIG. 56 is formed.
  • the first branch 75a and the second branch 75b may be formed. Due to the second branch 75b, the insulating reflective film R protrudes upward between the first electrode 80 and the second electrode 70 to form a weir 98.
  • the weir 98 may prevent or suppress the bolts caused by electromigration.
  • FIG. 61 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure.
  • a weir 98 is formed of a dielectric or an insulator separately from the formation of electrodes 80 and 70. The electromigration can be suppressed by forming between the first electrode 80 and the second electrode 70.
  • the weir 98 may include a metal 98b and an insulator 98a. The metal part 98b of the weir 98 is formed with the electrodes 80 and 70, and the insulator 98a which covers the metal part 98b is formed.
  • the insulator 98a causes the volt to be broken. Is prevented.
  • FIGS. 62 and 63 are diagrams for describing still another example of the semiconductor light emitting device according to the present disclosure, and FIGS. 63A and 63B illustrate examples of a cross section taken along a line D-D in FIG. 62.
  • a trench or a groove 67 is formed in the insulating reflective film R between the first electrode 80 and the second electrode 70.
  • a trench or a groove 67 may be formed.
  • a reflector 97 may be formed in the trench or the groove 67 to maintain the shape of the trench or the groove 67 to prevent possible leakage of light.
  • a branch 85b of the branch electrode 85 may be formed on the upper surface of the branch electrode 85. Due to the height difference due to the mesa etching, a groove or a groove 67 may be formed in the insulating reflective film R as shown in FIG. 63B.
  • Such trenches, grooves 67, or grooves 67 may increase the travel distance of atoms by electromigration, or may interfere with progress. Therefore, when using for a long time, the bolt by electromigration can be prevented or suppressed.
  • FIG. 64 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, and FIG. 64B illustrates an example of a cross section along the E-E line of FIG. 64A.
  • the plurality of semiconductor layers 30, 40, and 50 are mesa-etched.
  • the plurality of semiconductor layers 30, 40, and 50 may be removed so that the substrate 10 is exposed, and there is a difference in height.
  • trenches are formed between the plurality of light emitting cells 101, 102, and 103, and grooves 67 or grooves are formed in the non-conductive reflective film R due to the trenches.
  • the first electrode 80 and the second electrode 70 are positioned on different light emitting cells 101 and 103, and the groove 67 or the second electrode 70 is formed between the first electrode 80 and the second electrode 70. Grooves can be formed to prevent or suppress the bolts caused by electromigration.
  • FIG. 65 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device may include a substrate 500 on which conductive parts 511 and 512 are formed, and a conductive part 511 and a conductive part 512.
  • Each of the solder bumps 7 includes the first and second electrodes 80 and 70.
  • a weir 98 is formed of a metal or dielectric between the first electrode 80 and the second electrode 70, or as shown in FIG. 65B, due to the second branch 75b.
  • the dam 98 may be formed by raising the insulating reflective film R.
  • the weir 98 Due to the weir 98, electromigration in the solder bumps 7 is suppressed, or even when an electromigration occurs, the weir 98 blocks or delays the movement of atoms, thereby improving reliability.
  • the weir 98 is formed so as not to contact the substrate 500.
  • the weir 98 is brought into contact with the substrate 500 so that the weir 98 has a function of blocking or hindering the electromigration between the conductive portion 511 and the conductive portion 512 in the substrate 500. May have Alternatively, apart from the weir 98, a dam or a wall is provided on the surface of the substrate 500 between the conductive portion 511 and the conductive portion 512 of the substrate 500 to form the conductive portion on the surface of the substrate 500. An example of suppressing the electromigration between the 511 and the conductive portion 512 may also be considered.
  • FIG. 66 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device may include a plurality of semiconductor layers 30, 40, and 50 (see FIG. 68), and first extension electrodes 85a and 85b; a first extending type electrode), a second extending electrode 75, an insulating reflective film R, a first electrode 80, and a second electrode 70.
  • the plurality of semiconductor layers 30, 40, and 50 may include a first semiconductor layer 30 having a first conductivity, a second semiconductor layer 50 having a second conductivity different from the first conductivity, and a first semiconductor layer 30. ) And an active layer 40 interposed between the second semiconductor layer 50 to generate light by recombination of electrons and holes (see FIG. 68).
  • the first extended electrodes 85a and 85b are formed in the first semiconductor layer 30 that is etched and exposed.
  • the second extended electrode 75 is formed on the second semiconductor layer 50.
  • the second extended electrode 75 may be omitted.
  • the insulating reflective film R is formed on the plurality of semiconductor layers 30, 40, and 50 so as to cover the first extended electrodes 85a and 85b and the second extended electrode 75. Reflects.
  • the first electrode 80 is formed on the insulating reflective film R and supplies one of electrons and holes to the first semiconductor layer 30 through the first extended electrodes 85a and 85b.
  • the second electrode 70 is formed on the insulating reflective film R, and supplies the other one of electrons and holes to the second semiconductor layer 50.
  • the first elongated electrodes 85a and 85b include a first branch 85a and a second branch 85b.
  • the first branch 85a extends along an edge of the first electrode 80 and / or the second electrode 70 between the first electrode 80 and the second electrode 70, and the second branch 85b. Extends below the first electrode 80 from the first branch 85a.
  • the first electrical connection part 81 connects the first electrode 80 and the second branch 85b through the insulating reflective film R.
  • the second extended electrode 75 extends below the second electrode 70 around the first electrode 80, and the second electrical connection 71 passes through the insulating reflective film R to form the second electrode 70. And the second extended electrode 75 are electrically connected to each other.
  • the first elongated electrodes 85a and 85b do not overlap the second electrode 70 and are formed to extend between the first electrode 80 and the second electrode 70. . Therefore, the etching area of the active layer 40 is reduced compared to the case where the plurality of first extended electrodes 85a and 85b extend below the second electrode 70.
  • a groove 67 (refer to FIG. 75) or a trench is formed in the insulating reflective film R to correspond to the first branch 85a due to the first extended electrodes 85a and 85b. These grooves 67 prevent material such as solder from moving by electromigration. Thus, the hit due to the electro migration raised in FIG. 54 can be prevented or suppressed.
  • FIG. 67 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 68 is a view for explaining an example of a cross section taken along line AA in FIG. 67, and a plurality of semiconductor layers 30, 40, 50, the first extended electrodes 85a and 85b, the second extended electrodes 75a, 75b and 75c, the insulating reflective film R, the first electrode 80, and the second electrode 70. Include.
  • group III nitride semiconductor light emitting element will be described as an example.
  • Sapphire, SiC, Si, GaN and the like are mainly used as the substrate 10, and the substrate 10 may be finally removed.
  • the positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and are mainly made of GaN in the group III nitride semiconductor light emitting device.
  • the plurality of semiconductor layers 30, 40, and 50 may include a buffer layer 20 formed on the substrate 10, a first semiconductor layer 30 having a first conductivity (eg, Si-doped GaN), and a second different from the first conductivity.
  • a conductive second semiconductor layer 50 eg, Mg-doped GaN
  • an active layer interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes ( 40; e.g., InGaN / (In) GaN multi-quantum well structure).
  • Each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer 20 may be omitted.
  • the plurality of semiconductor layers 30, 40 and 50 have a substantially rectangular shape and when viewed from above, have long edges facing each other and two short edges facing each other.
  • the second semiconductor layer 50 and the active layer 40 are etched to form an n-contact region 35 through which the first semiconductor layer 30 is exposed.
  • First extended electrodes 85a and 85b are formed in the n-contact region 35.
  • a current diffusion electrode 60 (eg, ITO, Ni / Au) is formed on the second semiconductor layer 50.
  • the first semiconductor layer 30, the active layer 40, the second semiconductor layer 50, and the current diffusion electrode 60 are formed on the substrate 10, and mesa-etched to form the n-contact region 35 described above. Can be formed. Mesa etching may be performed before or after the current diffusion electrode 60 is formed.
  • the current spreading electrode 60 can be omitted.
  • Second extended electrodes 75a, 75b, 75c are formed over current spreading electrode 60.
  • the first extended electrodes 85a and 85b and the second extended electrodes 75a, 75b and 75c may be formed of a plurality of metal layers, and may be in electrical contact with the first semiconductor layer 30 or the current spreading electrode 60. This good contact layer and a reflective layer having good light reflectivity can be provided.
  • the light absorption prevention film 41 is formed of the second extended electrode 75a, 75b, 75c and the second electrode between the second semiconductor layer 50 and the current diffusion electrode 60 using SiO 2 , TiO 2, or the like. It is formed corresponding to the electrical connection 71.
  • the light absorption prevention layer 41 may have only a function of reflecting some or all of the light generated in the active layer 40, and is directly from the second extended electrodes 75a, 75b, 75c and the second electrical connection 71. It may have only a function of preventing current from flowing down, or may have both functions.
  • the insulating reflective film R is formed to cover the current spreading electrode 60, the first extended electrodes 85a and 85b, and the second extended electrodes 75a, 75b and 75c and the light from the active layer 40. Is reflected to the substrate 10 side.
  • the insulating reflective film R is formed of an insulating material in order to reduce light absorption by the metal reflective film, and preferably, a distributed Bragg reflector, an omni-directional reflector (ODR), or the like is used. It may be a multilayer structure comprising.
  • the insulating reflective film R includes, as an example of a multilayer structure, a dielectric film 91b, a distributed Bragg reflector 91a, and a clad film 91c.
  • the dielectric film 91b may reduce the height difference to stably manufacture the distributed Bragg reflector 91a and may also help to reflect light.
  • SiO 2 is a suitable material for the dielectric film 91b.
  • the distributed Bragg reflector 91a is formed on the dielectric film 91b.
  • the distribution Bragg reflector 91a may be composed of repeated stacking of materials having different reflectances, for example, SiO 2 / TiO 2 , SiO 2 / Ta 2 O 2 , or SiO 2 / HfO.
  • the clad film 91c may be made of a metal oxide such as Al 2 O 3 , a dielectric film 91b such as SiO 2 , SiON, MgF, CaF, or the like.
  • the first electrode 80 and the second electrode 70 are provided to face each other on the insulating reflective film R.
  • the first electrode 80 is formed long along the first edge (one long edge), and the second electrode 70 is formed long along the second edge (the other long edge).
  • the first elongated electrodes 85a and 85b include a first branch 85a and a second branch 85b.
  • the first branch 85a extends in a direction from the third edge (one short edge) to the fourth edge (the other short edge) between the first electrode 80 and the second electrode 70.
  • the first branch 85a is formed along the long edge direction.
  • the second branch 85b protrudes from the first branch 85a and extends below the first electrode 80.
  • the first electrical connector 81 penetrates the insulating reflective film R to electrically connect the second branch 85b and the first electrode 80.
  • the first branches 85a of the two first elongated electrodes 85a and 85b are arranged in a line in the long edge direction.
  • the second extended electrodes 75a, 75b and 75c are formed along edges of the plurality of semiconductor layers 30, 40 and 50.
  • the second electrode 70 and the second extended electrode 75a, 75b, 75c together form a closed loop, and the first extended electrode 85a, 85b is located in the closed loop.
  • the second elongated electrodes 75a, 75b, 75c extend along a first edge 75a extending along a third edge, a second branch 75b extending along a fourth edge, and extending along the first edge.
  • a third branch 75c connecting the first branch 75a and the second branch 75b.
  • the two second electrical connectors 71 pass through the insulating reflective film R to connect the second electrode 70, the first branch 75a, and the second branch 75b, respectively.
  • the one or more first electrical connectors 81 are in electrical communication with the first semiconductor layer 30 in an island form without the first extended electrodes 85a and 85b, and the one or more second electrical connectors 71. Is electrically in communication with the second semiconductor layer 50 in an island form without using the second extension electrodes 75a, 75b, 75c.
  • the first branch 85a of the first extended electrodes 85a and 85b faces the second electrode 70 with a relatively long length to spread current
  • the first electrical connection 81 and the second electrical connection 71 Improve the uniformity of current supply by adjusting the number and position of
  • the second extension type electrodes 75a, 75b, and 75c may extend along the first edge where the third branch 75c is positioned on the first electrode 80 to further improve current uniformity.
  • a groove is formed in the insulating reflective film R between the first electrode 80 and the second electrode 70 due to the first branch 85a to suppress or prevent the bolt caused by the electromigration.
  • FIG. 69 is a view showing Comparative Example 1 of the semiconductor light emitting device, in which the first branch electrode 85 and the second branch electrode 75 extend along a long side (long edge).
  • the n-contact region 35 is much longer than the example shown in FIG. 67. Therefore, the active layer 40 is removed more by that much, and the light emitting area is further reduced. That is, the semiconductor light emitting device shown in FIG. 67 is more advantageous in reducing the light emitting area reduction than in the comparative example shown in FIG. 69, and is also advantageous in reducing the length of the extended electrode. As a result, the brightness is improved.
  • FIG. 70 is a view for explaining the relationship between the area of the electrode and the luminance of the semiconductor light emitting element.
  • the electrodes 70 and 80 are positioned on the non-conductive reflecting film R such as DBR, Although light is absorbed, it has been known that the reflectance can be increased when the electrodes 70 and 80 are made of a metal having high reflectance such as Ag and Al.
  • the electrodes 70 and 80 since the electrodes 70 and 80 must also function to dissipate the bonding pads and the semiconductor light emitting device, the size of the electrodes 70 and 80 should be determined in consideration of these factors.
  • the present inventors have found that when an insulating reflective film R such as DBR is used, the light reflectance of the non-conductive reflective film 91 increases as the size of the electrodes 70 and 80 placed thereon is increased.
  • the results provided an instrument that can reduce the size of the electrodes 70, 80 to a range that could not be omitted conventionally.
  • the distribution Bragg reflector 91a reflects better as light closer to the vertical direction reflects light of approximately 99% or more. However, obliquely incident light L1 and L2 (see FIG. 68) pass through the distribution Bragg reflector 91a and enter the upper surface of the clad film 91c or the insulating reflective film R, and are caused by the electrodes 80 and 70. In the uncovered portion, the light L1 is almost reflected, but part of the light L2 incident on the electrodes 80 and 70 is absorbed (see FIG. 68).
  • luminance was tested by changing the gap G and the area ratio between the electrodes 80 and 70.
  • the distance G is changed to 150 um (FIG. 70a), 300 um (FIG. 70b), 450 um (FIG. 70c) and 600 um (FIG. 70d), and the gap between the outer edge of the semiconductor light emitting element and the outer edges of the electrodes 80 and 70 is shown. Is constant.
  • the distance (W) between the edges of the semiconductor light emitting element in the direction in which the electrodes 80, 70 face each other is 1200um
  • the vertical length (c) is 600um
  • the width (B) of the electrodes 80, 70 is 485,410,335,260um
  • the length A of the electrodes 80 and 70 is constant at 520 um.
  • the area ratio of the planar area of the semiconductor light emitting element to the electrodes 80 and 70 is 0.7, 0.59, 0.48 and 0.38, respectively. If the distance between the electrodes 80 and 70 is 80 um, the area ratio is 0.75. When the areas of the electrodes 80 and 70 are the same, it is found that there is no significant difference in luminance even when the distance between the electrodes 80 and 70 changes.
  • the electrode area decreases by (long edge length) * (G increase), and in FIG. In the example shown, the electrode area is reduced by (short edge length) * (G increase). Therefore, it can be seen that the example shown in FIG. 67 is a more advantageous structure for increasing the luminance due to the decrease of the electrode.
  • FIG. 71 is a view showing Comparative Example 2 of the semiconductor light emitting device, in which the plurality of first branch electrodes 85 are below the first electrode 80 and below the second electrode 70 in the semiconductor light emitting device of Comparative Example 2; And a plurality of second branch electrodes 75 extend below the first electrode 80 under the second electrode 70. If the lengths of the horizontal (short edge) and vertical (long edge) of the semiconductor light emitting devices are the same, the lengths of the two first extended electrodes 85a and 85b of the semiconductor light emitting device shown in FIG. Compared with the first branch electrode 85, the length thereof is reduced. Therefore, the example shown in FIG. 67 is better to reduce the emission area reduction than Comparative Example 2, and the light absorption by the metal can be further reduced.
  • the groove 67 is formed between the first electrode 80 and the second electrode 70 due to the first branch 85a of the first extended electrodes 85a and 85b, thereby migrating to the electrophoresis. It is also a better structure to prevent bolts.
  • Comparative Example 2 although the plurality of first branch electrodes 85 extend below the second electrode 70, a large difference in height or irregularities occurs in the second electrode 70. Since the first extension electrodes 85a and 85b are not positioned below the second electrode 70, the unevenness is reduced.
  • FIG. 72 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, in which an additional second extended electrode 76 is formed corresponding to two first branches 85a.
  • the length of the additional second elongated electrode 76 can be increased or decreased to adjust the current supply in the vicinity between the two first branches 85a.
  • the second extended electrodes 75a, 75b, 75c, and 75d further include a fourth branch 75d.
  • the fourth branch 75d connects the plurality of second electrical connectors 71 and is connected to the first branch 75a and the second branch 75b.
  • the second extended electrodes 75a, 75b and 75c have a closed loop shape, and the first extended electrodes 85a and 85b are positioned in the closed loop.
  • the first electrode 80 may be formed in the closed loop.
  • FIG. 74 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the third branch 75c of the second extended electrodes 75a, 75b, and 75c may include the first electrode 80. It extends along the first edge but is formed so as not to pass under the first electrode 80. Therefore, occurrence of irregularities in the first electrode 80 by the third branch 75c is reduced.
  • FIG. 75 is a view for explaining an example of a cross section taken along a line B-B of FIG. 74
  • FIG. 76 is a view illustrating an example in which a semiconductor light emitting device according to the present disclosure is bonded to a substrate by solder bumps.
  • the example shown in FIG. 75A illustrates a case where there is no groove 67 because there is no first branch 85a according to the present disclosure between the first electrode 80 and the second electrode 70.
  • the first electrode 80 and the second electrode 70 are joined to the substrate 500 by solder bumps 7, respectively. Electromigration may occur from the solder bumps 7 to generate volts between the first electrode 80 and the second electrode 70 along the insulating reflective film R surface (see FIG. 75A).
  • FIG. 75A illustrates a case where there is no groove 67 because there is no first branch 85a according to the present disclosure between the first electrode 80 and the second electrode 70.
  • Electromigration may occur from the solder bumps 7 to generate volts between the first electrode 80 and the second electrode
  • the groove 67 in which the insulating reflective film R is recessed due to the first branch 85a is formed to extend between the first electrode 80 and the second electrode 70. Accordingly, as shown in FIG. 76, the material 5 moved by the electromigration may be difficult or delayed to cross the groove 67.
  • FIG. 77 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the second extended type electrodes 75a, 75b, and 75c are omitted, and the second electrode 70 itself is a closed loop. It has a shape.
  • a plurality of second electrical connections 71 are arranged along the closed loop to provide a current supply passage.
  • the first extended electrodes 85a and 85b are positioned inside the closed loop of the second electrode 70, and the first electrode 80 is also located inside the closed loop of the second electrode 70.
  • the second extended electrodes 75a, 75b and 75c positioned between the second semiconductor layer 50 and the insulating reflective film R are removed, the light absorption loss decreases.
  • the plate 200 includes a first conductive portion 201, a second conductive portion 202, and an insulating portion 203.
  • the first electrode 80 and the second electrode 70 of the semiconductor light emitting device 101 are bonded to the first conductive portion 201 and the second conductive portion 202, respectively.
  • the insulating portion 203 is interposed between the first conductive portion 201 and the second conductive portion 202, and corresponds between the first electrode 80 and the second electrode 70.
  • the first conductive portion 201 and the second conductive portion 202 are exposed up and down, and the insulating portion 203 does not cover the conductive portions 201 and 202 up and down, which is very effective for heat dissipation.
  • the first conductive portion 201 and the second conductive portion 202 are alternately formed, and the first electrode 80 and the second electrode 70 of neighboring semiconductor light emitting devices are bonded to each conductive portion to form a plurality of semiconductors.
  • the light emitting elements 101, 102, 103 are connected in series. Of course, parallel connection is also possible.
  • the semiconductor light emitting device may include a substrate 10, a plurality of semiconductor layers 30, 40, and 50, a light absorption prevention film 41, and a transparent conductive film. 60, the non-conductive reflective film R, the first electrode 80, the second electrode 70, the first electrical connection 81, the second electrical connection 71, the first lower electrode 82, and The second lower electrode 72 is included.
  • the plurality of semiconductor layers 30, 40, and 50 may include a first semiconductor layer 30 having a first conductivity, a second semiconductor layer 50 having a second conductivity different from the first conductivity, and a first semiconductor layer 30. And an active layer 40 interposed between the second semiconductor layer 50 and generating light through recombination of electrons and holes, and is formed on the growth substrate 10.
  • the light absorption prevention layer 41 may be formed on the second semiconductor layer 50, and the light absorption prevention layer 41 may be omitted.
  • the transparent conductive film 60 is formed to cover the light absorption prevention film 41, and has a light transmissive characteristic.
  • materials such as ITO and Ni / Au may be used as the transparent conductive film 60.
  • Lower electrodes 72 and 82 are formed on the transparent conductive film 60 and the first semiconductor layer 30 exposed through mesa etching, respectively, and the non-conductive reflective film R is formed on the transparent conductive film 60. It is.
  • the nonconductive reflective film R has a smaller light absorption loss than the metal reflective film, and reflects light from the active layer 40 toward the substrate 10.
  • the first electrode 80 and the second electrode 70 are formed on the non-conductive reflective film R to form the lower electrode 82 and the lower electrode, respectively, by the first electrical connection 81 and the second electrical connection 71. 72).
  • the plurality of semiconductor layers 30, 40, 50 have etched or cut sides 35 (see FIG. 82).
  • the circumferences of the plurality of semiconductor layers 30, 40, and 50 have mesa etched edges 36 (see FIG. 82).
  • the distance E to the first electrode 80 and the second electrode 70 and the side surfaces 35 of the plurality of semiconductor layers 30, 40, 50 when viewed in a top view. 50 ⁇ m or more, so that cracks generated in the non-conductive reflective film R are not easily propagated to the first electrode 80 and the second electrode 70. Thus, peeling of the electrodes 80 and 70 due to cracks is prevented.
  • FIG. 81 is a view for explaining the relationship between the area of an electrode and the luminance of a semiconductor light emitting device.
  • the present inventors have described the size of electrodes 80 and 70 placed thereon when a non-conductive reflective film R including DBR is used. It has been confirmed that as the (area) is reduced, the light reflectance by the non-conductive reflecting film R increases, and the results of these experiments provide an opportunity for the size of the electrodes 80 and 70 to be reduced to an unthinkable range in the present disclosure. And, the width of the weir 98 did not need to be formed unnecessarily wide.
  • the distribution Bragg reflector 91a reflects better as light closer to the vertical direction reflects light of approximately 99% or more. However, obliquely incident light L1, L2 (see FIG. 83) passes through the distribution Bragg reflector 91a (see FIG. 83), and enters the top surface of the clad film 91c (see FIG. 83) or the non-conductive reflecting film R. In the portion not covered by the electrodes 80 and 70, the light L1 is almost reflected, but part of the light L2 incident on the electrodes 80 and 70 is absorbed.
  • luminance was tested by changing a gap G and an area ratio between the electrodes 80 and 70.
  • the distance G is changed to 150 ⁇ m (FIG. 81A), 300 ⁇ m (FIG. 81B), 450 ⁇ m (FIG. 81C), and 600 ⁇ m (FIG. 81D), and the outside of the semiconductor light emitting element and the outside of the electrodes 80 and 70
  • the distance E to the edge is constant.
  • the distance (W) between the edges of the semiconductor light emitting element in the direction in which the electrodes 80, 70 face each other is 1200 mu m, the vertical length c is 600 mu m, and the width B of the electrodes 80, 70 is 485, 410, 335, 260
  • the length A of the electrodes 80, 70 is constant at 520 m.
  • the area ratio of the planar area of the semiconductor light emitting element to the electrodes 80 and 70 is 0.7, 0.59, 0.48 and 0.38, respectively. If the distance G between the electrodes 80 and 70 is 80 ⁇ m, the area ratio is 0.75. When the areas of the electrodes 80 and 70 are the same, it is found that there is no significant difference in luminance even when the gaps G of the electrodes 80 and 70 change.
  • the upper graph in FIG. 81 is a graph showing the results of the described experimental examples.
  • the reference luminance is 100, 106.79 (FIG. 81A), 108.14 (FIG. 81B), 109.14 (FIG. 81C) and 111.30 (FIG. 81D).
  • the luminance of was confirmed. It can be seen that the increase in luminance is considerably high. If the area ratio of the electrodes 80 and 70 is smaller than 0.38, there may be further increase in luminance.
  • FIG. 82 is a diagram illustrating another example of the semiconductor light emitting device according to the present disclosure
  • FIG. 83 is a diagram illustrating an example of a cross section taken along line AA of FIG. 82, and includes a plurality of semiconductor layers 30, 40, and 50.
  • the semiconductor light emitting device may be a chip such as a blue semiconductor light emitting chip (eg, 450 nm), a NUV semiconductor light emitting chip, a green semiconductor light emitting chip, or a red semiconductor light emitting chip.
  • a group III nitride semiconductor light emitting device as an example, a plurality of semiconductor layers 30, 40, and 50 are formed on the growth substrate 10.
  • Sapphire, SiC, Si, GaN and the like are mainly used as the substrate 10, and the substrate 10 may be finally removed.
  • the positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and are mainly made of GaN in the group III nitride semiconductor light emitting device.
  • the plurality of semiconductor layers 30, 40, and 50 may include a buffer layer 20 formed on the growth substrate 10, a first semiconductor layer 30 having a first conductivity (eg, Si-doped GaN), and a material different from the first conductivity.
  • Each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer 20 may be omitted.
  • the groove 63 may be formed by mesa etching exposing the first semiconductor layer 30 in the process of partitioning the wafer into a plurality of semiconductor light emitting device regions. Thereafter, the transparent conductive film 60 is formed. A mesa etching process may be performed after the transparent conductive film 60 is formed.
  • a light absorption prevention layer 41 may be formed between the second semiconductor layer 50 and the transparent conductive layer 60 in response to the electrical connection 71 or the branch electrode 75 to be described later.
  • the light absorption prevention layer 41 may have only a function of reflecting some or all of the light generated from the active layer 40, and prevents current from flowing directly below the electrical connection 71 or the branch electrode 75 ( current blocking) only, or both functions.
  • branch electrode 75 and the island pad 72 are formed on the light-transmitting conductive layer 60 to correspond to the light absorption prevention layer 41, and the branch electrode 85 is formed on the first semiconductor layer 30 exposed by mesa etching. ) Is formed.
  • the branch electrodes 85 and 75 may be omitted depending on the specification of the semiconductor light emitting device.
  • a non-conductive reflective film R is formed on the transparent conductive film 60.
  • the nonconductive reflecting film R reflects light from the active layer 40.
  • the non-conductive reflecting film R preferably has a plurality of layers, and at least a side of reflecting light of the non-conductive reflecting film R is formed of a non-conductive material in order to reduce light absorption by the metal reflecting film. Insulating means that the non-conductive reflecting film R is not used as a means of electrical conduction, and does not necessarily mean that the entire non-conductive reflecting film R is made of only a non-conductive material.
  • the nonconductive reflector R may include a distributed Bragg reflector 91a, an omni-directional reflector ODR, or the like.
  • the metal reflective film is provided on the second semiconductor layer 50, the second electrode 70 is provided on the metal reflective film, and the first semiconductor layer 30 and the first electrode 80 exposed by mesa etching. ) May be communicated.
  • the nonconductive reflecting film R includes a dielectric film 91b, a distributed Bragg reflector 91a, and a clad film 91c.
  • the distributed Bragg reflector 91a is formed on the dielectric film 91b.
  • the distributed Bragg reflector 91a is formed by stacking a pair of SiO 2 and TiO 2 a plurality of times, for example.
  • the distribution Bragg reflector 91a may be formed by a combination of a high refractive index material such as Ta 2 O 5 , HfO, ZrO, SiN, and a dielectric thin film (typically SiO 2 ) having a lower refractive index.
  • the distributed Bragg reflector 91a may consist of repeated stacks of SiO 2 / TiO 2 , SiO 2 / Ta 2 O 2 , or SiO 2 / HfO pairs, and SiO 2 / TiO 2 reflects blue light. The efficiency is good, and for UV light, SiO 2 / Ta 2 O 2 , or SiO 2 / HfO will have good reflection efficiency.
  • the clad film 91c may be made of a metal oxide such as Al 2 O 3 , a dielectric film 91b such as SiO 2 , SiON, MgF, CaF, or the like.
  • the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c serve as an optical waveguide as the nonconductive reflecting film R, and have a total thickness of 1 ⁇ m to 8 ⁇ m, or 4 ⁇ m. ⁇ 5 ⁇ m.
  • Openings are formed in the non-conductive reflecting film R, and electrical connections 81 and 71 and electrodes 80 and 70 are formed.
  • the first electrical connection 81 penetrates the non-conductive reflective film R and is electrically connected to the first semiconductor layer 30 through the grooves 63 formed in the plurality of semiconductor layers 30, 40, and 50.
  • the second electrical connection 71 penetrates through the non-conductive reflective film R and is electrically connected to the second semiconductor layer 50.
  • a first electrode 80 connected to the first electrical connection 81 and a second electrode 70 connected to the second electrical connection 71 are formed on the non-conductive reflective film R. Electrical connections 81 and 71 and electrodes 80 and 70 may be formed together.
  • the distance E1.E2 from the entire side surfaces 35 of the plurality of mesa-etched semiconductor layers 30, 40, 50 to the edges of the electrodes 80, 70 is formed to be 50 ⁇ m or more.
  • the first electrode 80 and the second electrode 70 may have a multi-layered structure, for example, Cr, Ti, and the like for stable electrical contact with the first lower electrode 82 and the second lower electrode 72.
  • the contact layer may be formed using Ni or an alloy thereof, and the reflective layer may be formed over the contact layer using a reflective metal layer such as Al or Ag.
  • the electrodes 80 and 70 may be contact layers (eg, Cr, Ti, etc.) / Reflective layers (eg, Al, Ag, etc.), diffusion barrier layers (eg, Ni, etc.), bonding layers (eg, Au / Sn alloys, Au / Sn / Cu alloy, Sn, heat-treated Sn, etc.).
  • contact layers eg, Cr, Ti, etc.
  • Reflective layers eg, Al, Ag, etc.
  • diffusion barrier layers eg, Ni, etc.
  • bonding layers eg, Au / Sn alloys, Au / Sn / Cu alloy, Sn, heat-treated Sn, etc.
  • the wafer is separated for each semiconductor light emitting device by a cutting process.
  • the scribing and / or breaking process can proceed. Chemical etching processes may be added.
  • the scribing process uses a laser or a cutter, and the semiconductor light emitting element preliminarily cut through the breaking process performed after the scribing process is divided into individual semiconductor light emitting elements ( 101) can be completely separated.
  • a stealth dicing method may be used as an example of the method of sawing using a laser.
  • cracks CR1 may occur in the non-conductive reflecting film R.
  • the distance E1.E2 to the edges of the electrodes 80, 70 is formed to be 50 ⁇ m or more. Therefore, the electrodes 80 and 70 are significantly reduced in the case where the crack propagates to the electrodes 80 and 70 at a considerable distance (E1.E2) from the edges of the plurality of semiconductor layers 30, 40 and 50, Therefore, the defect is reduced.
  • the distance E1.E2 may be increased to prevent defects such as peeling of the electrodes 80 and 70 due to the crack CR1.
  • the gap G between the electrodes 80 and 70 is maintained as it is, the area of the electrodes 80 and 70 as a whole decreases and the luminance will increase.
  • the gap G from which the first electrode 80 and the second electrode 70 are separated for the purpose of electrical short prevention or solder material control. ) Is preferably 80 ⁇ m or more.
  • the intensity of the electric field between the electrodes 80 and 70 may increase, thereby increasing the electromigration problem described with reference to FIG. 3. Therefore, it is preferable that the space
  • the gap G between the electrodes 80 and 70 is 80 ⁇ m or more, and the electrodes 80 and 70 are formed from the side surfaces 35 of the plurality of mesa-etched semiconductor layers 30, 40, and 50.
  • the distance E1.E2 to the edge of is equal to or greater than 50 ⁇ m.
  • increasing the distance E1.E2 has advantages in addition to preventing the crack CR1 from invading the electrodes 80 and 70.
  • the 79 may spread to the edges of the semiconductor light emitting devices during bonding and may rise up to side surfaces of the plurality of semiconductor layers 30, 40, and 50. In this case, there is a problem that the performance and reliability of the semiconductor light emitting device are deteriorated.
  • the solder bumps 16 are formed further away from the edge of the non-conductive reflecting film R, so that the solder is formed in the plurality of semiconductor layers 30, 40, 50. Climbing to the side of can be suppressed.
  • the ratio of the area of the first electrode 80 and the second electrode 70 to the planar area of the semiconductor light emitting device should be about 0.7 or less. 70) It was confirmed that the luminance increased by about 6 to 7% compared to the case where the interval G was 80 ⁇ m and the area ratio was about 75%.
  • the ratio of the area of the sum of the 80 and the second electrode 70 is about 0.7 or less, so that the electrode (from the mesa etched side surfaces 35 of the plurality of semiconductor layers 30, 40, 50, as shown in this example). It is preferable to increase the distance E1.E2 to the edge of 80,70. In addition, the first electrode 80 and the second electrode 70 and the side surfaces of the plurality of semiconductor layers 30, 40, and 50 with respect to the gap G between the first electrode 80 and the second electrode 70. It is preferable that the ratio of distance to a field is 0.5-5.0.
  • FIG. 84 is a diagram illustrating still another example of the semiconductor light emitting device according to the present disclosure.
  • the branch electrode illustrated in FIG. 84 85,75
  • the area of the mesa etching that is, the loss of the active layer 40 may increase, and as a result, the effect of increasing the luminance due to the area reduction of the electrodes 80 and 70 may be cancelled.
  • the distance (E1.E2) is increased to decrease the area of the electrodes 80 and 70, but only the electrical connections 71b and 81b that are not connected to the branch electrodes 85 and 75 are independently indicated by arrows. Move the position as shown.
  • the mesa etching area due to the electrical connections 71a, 81a, 71b, and 81b and the branch electrodes 85 and 75 does not increase. That is, the loss of the active layer 40 does not increase, and there is a brightness increase effect due to the reduction of the area of the electrodes 80 and 70.
  • Each edge (each edge of the mesa-etched side surfaces 35) and the first of the plurality of semiconductor layers 30, 40, and 50 may be formed.
  • the distances E1 and E2 between the electrode 80 and the second electrode 70 are formed to be larger than the distance G between the first electrode 80 and the second electrode 70.
  • the distances E1 and E2 are increased instead of increasing the distance G between the first electrode 80 and the second electrode 70.
  • the distances E1 and E2 may be considered to include both distances E1 and E2 in the direction in which the first electrode 80 and the second electrode 70 face each other and in a direction perpendicular thereto.
  • the distance E2 can be made different. In a region where many cracks CR1 are generated and propagation is easy, the distance at the edge can be made larger, and in a region where the cracks CR1 are weak, the distance can be made relatively small. In either case, the distances E1 and E2 should be 50 ⁇ m or more.
  • FIG. 86 is a view illustrating another example of a semiconductor light emitting device according to the present disclosure, wherein the edges of the electrodes 80 and 70 and the mesa etched edge distances of the plurality of semiconductor layers 30, 40 and 50 are E1.E2. To be 50 ⁇ m or more, but an example in which the cutout portion 99 is formed on the electrodes 80 and 70 in a region where cracks CR1 are generated (for example, a corner or between the electrodes 80 and 70) may be considered. Can be. Due to the cutout 99, the propagation of the cracks CR1 (see FIG. 82) to the electrodes 80 and 70 can be better prevented.
  • the second electrode is separated into a plurality of sub-electrodes 70a and 70b, and the first electrode 80 is a plurality of sub-electrodes ( 70a, 70b).
  • the area ratio of the electrode to the planar area changes. By changing this, the luminance becomes relatively higher when the ratio of the areas is approximately 0.7 or less. If the distances (E1, E2) with the edge to 50 ⁇ m or more while maintaining this ratio, it can have the advantages described above.
  • FIG. 89 is a view for explaining an example of a cross section taken along the line AA of FIG. 88
  • the semiconductor light emitting device may include a plurality of semiconductor layers ( 30, 40, 50, an insulating layer 45, a connection electrode 85, and contact electrodes 75, 76.
  • the plurality of semiconductor layers 30, 40, and 50 may include a first semiconductor layer 30 having a first conductivity, a second semiconductor layer 50 having a second conductivity different from the first conductivity, and a first semiconductor layer 30.
  • an active layer 40 interposed between the second semiconductor layer 50 to generate light by recombination of electrons and holes.
  • a plurality of grooves 35 (see FIGS. 89 and 90) exposing the first semiconductor layer 30 are formed in the plurality of semiconductor layers 30, 40 and 50.
  • the insulating layer 45 extends over the second semiconductor layer 50, extends to the inner side surface of each groove 35, and is formed to expose the first semiconductor layer 30 of each groove 35.
  • the connection electrode 85 extends over the insulating layer 45 and is electrically connected to the first semiconductor layer 30 of each groove 35 to supply one of electrons and holes.
  • the connection electrode 85 is in electrical communication with the first semiconductor layer 30 of the plurality of grooves 35.
  • the contact electrodes 75 and 76 are formed on the second semiconductor layer 50 to supply the other one of electrons and holes to the second semiconductor layer 50.
  • the semiconductor light emitting device includes a substrate 10, a light absorption prevention film 41, a transparent conductive film 60, a non-conductive reflective film R, a first electrode 80, a second electrode 70, and a first electrode. Electrical connections 81, and second electrical connections 71.
  • a plurality of semiconductor layers 30, 40, and 50 are formed on the substrate 10, and the non-conductive reflective film R is formed to cover the connection electrode 85 and the contact electrodes 75 and 76, and the active layer 40. Reflects light from The first electrode 80 and the second electrode 70 are formed on the nonconductive reflecting film R.
  • the first electrical connection portion 81 penetrates the non-conductive reflective film R to electrically connect the first electrode 80 and the connection electrode 85.
  • the second electrical connector 71 penetrates the non-conductive reflective film R to electrically connect the second electrode 70 and the contact electrodes 75 and 76.
  • the area of the active layer 40 decreases by that amount.
  • the groove 35 corresponding to a part of the connection electrode 85 is formed in the plurality of semiconductor layers 30, 40, and 50, the area reduction of the active layer 40 is reduced.
  • the luminance of the semiconductor light emitting element is improved.
  • FIGS. 88 to 92 are views for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • a group III nitride semiconductor light emitting device will be described with reference to FIGS. 88 to 92.
  • a plurality of semiconductor layers 30, 40, and 50 are formed on the substrate 10.
  • Sapphire, SiC, Si, GaN and the like are mainly used as the substrate 10, and the substrate 10 may be finally removed.
  • the positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and are mainly made of GaN in the group III nitride semiconductor light emitting device.
  • the plurality of semiconductor layers 30, 40, and 50 may include a buffer layer 20 formed on the substrate 10, a first semiconductor layer 30 having a first conductivity (eg, Si-doped GaN), and a second different from the first conductivity.
  • a conductive second semiconductor layer 50 eg, Mg-doped GaN
  • an active layer interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes ( 40; e.g., InGaN / (In) GaN multi-quantum well structure).
  • Each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer 20 may be omitted.
  • the plurality of semiconductor layers 30, 40 and 50 have a substantially rectangular shape, and when viewed from above, long edges facing each other and two short edges facing each other are shown.
  • a plurality of grooves 35 n-contact regions
  • the first semiconductor layer 30 may be exposed through each of the grooves 35, and edges of the plurality of semiconductor layers 30, 40, and 50 may be mesa-etched together during the mesa etching process.
  • the insulating layer 45 may be made of an insulating material such as SiO 2 , TiO 2, DBR, or a light reflective material.
  • the insulating layer 45 is formed on the second semiconductor layer 50, extends to the inner side surface of each groove 35, and is formed to expose the first semiconductor layer 30 exposed by each groove 35. do.
  • the insulating layer 45 is formed intermittently between the groove 35 and the groove 35.
  • the insulating layer 45 may be continuously formed to connect the plurality of grooves 35, and may be formed to expose the first semiconductor layer 30 of each groove 35.
  • a translucent conductive film 60 (e.g., ITO, Ni / Au) is preferably formed over the second semiconductor layer 50.
  • a translucent conductive film 60 e.g., ITO, Ni / Au
  • Mesa etching for forming the groove 35 may be performed before or after the transparent conductive film 60 is formed.
  • the transparent conductive film 60 may be omitted.
  • the transparent conductive film 60 is formed in a region different from the insulating layer 45 for electrical separation from the connection electrode 85. Of course, it does not exclude that the transparent conductive film 60 partially overlaps the insulating layer 45.
  • FIG. 92 an example of the boundary line of the translucent conductive film 60 around the groove 35 is shown in FIG. 92, it is omitted for convenience of illustration in FIG. 88.
  • the light absorption prevention layer 41 is formed on the second semiconductor layer 50 before the light-transmissive conductive layer 60 is formed.
  • the light absorption prevention film 41 is formed to correspond to the contact electrodes 75 and 76 between the second semiconductor layer 50 and the transparent conductive film 60 using SiO 2 , TiO 2 , DBR, or the like.
  • the light absorption prevention layer 41 and the insulating layer 45 may be formed together, and may be formed of the same material.
  • the light absorption prevention film 41 may have only a function of reflecting some or all of the light generated in the active layer 40, or may have only a function of preventing current from flowing directly down from the contact electrodes 75 and 76. It may have both functions.
  • connection electrodes 85 and contact electrodes 75 and 76 are formed through a deposition process or the like.
  • the connecting electrode 85 extends in a strip or branch shape and is electrically connected to the first semiconductor layer 30 exposed by each groove 35, and the insulating layer 45 is connected to the connecting electrode 85. Extends intermittently along A plurality of connection electrodes 85 are arranged in a plurality of rows, and extend in the extension direction of the above-mentioned short edge.
  • a plurality of contact electrodes 75 and 76 are alternately arranged with the connection electrode 85, and each of the contact electrodes 75 and 76 has a branched contact electrode 75 extending in length, and a dot shape formed in an island or dot form. It has a contact electrode 76.
  • the connection electrode 85 and the contact electrode 75 extend along the direction in which the short edges of the plurality of semiconductor layers 30, 40, 50 extend in a plan view.
  • the non-conductive reflective film R is formed to cover the connection electrode 85 and the contact electrodes 75 and 76.
  • the non-conductive reflective film R reflects the light from the active layer 40 toward the substrate 10 side.
  • the non-conductive reflector R is formed of an insulating material to reduce light absorption by the metal reflector, and is preferably a distributed Bragg reflector, an omni-directional reflector, or the like. It may be a multilayer structure comprising a.
  • the nonconductive reflecting film R includes, as an example of a multilayer structure, a dielectric film 91b, a distributed Bragg reflector 91a, and a clad film 91c.
  • the dielectric film 91b may reduce the height difference to stably manufacture the distributed Bragg reflector 91a and may also help to reflect light.
  • SiO 2 is a suitable material for the dielectric film 91b.
  • the distributed Bragg reflector 91a is formed on the dielectric film 91b.
  • the distribution Bragg reflector 91a may be composed of repeated stacking of materials having different reflectances, for example, SiO 2 / TiO 2 , SiO 2 / Ta 2 O 2 , or SiO 2 / HfO.
  • the clad film 91c may be made of a metal oxide such as Al 2 O 3 , a dielectric film 91b such as SiO 2 , SiON, MgF, CaF, or the like.
  • an opening is formed in the non-conductive reflecting film R at the position where the electrical connection portions 71 and 81 are to be formed.
  • the first electrical connection 81 and the second electrical connection 71 are formed in the opening, and together with or separately, the first electrode 80 and the second electrode 70 are formed.
  • the first electrode 80 is connected to the connection electrode 85 by the first electrical connection 81.
  • the first electrical connection 81 is connected to the connection electrode 85 on the second semiconductor layer 50.
  • an example in which the first electrical connection 81 is connected to the connection electrode 85 formed in the groove 35 may be considered.
  • the second electrode 70 is connected to the contact electrodes 75, 76 by a second electrical connection 71.
  • the first electrode 80 and the second electrode 70 are provided to face each other on the non-conductive reflective film R.
  • the first electrode 80 is formed long along the first edge (one long edge), and the second electrode 70 is formed long along the second edge (the other long edge).
  • FIG. 93 to 96 are diagrams for describing another example of the semiconductor light emitting device according to the present disclosure.
  • the grooves 35 are formed in the plurality of semiconductor layers 30, 40, and 50.
  • the light absorption prevention layer 41 is formed on the second semiconductor layer 50.
  • the light-transmitting conductive film 60 is formed to cover the light absorption prevention film 41 and the second semiconductor layer 50 and to expose the groove 35.
  • FIG. 96 is a cross-sectional view taken along the line B-B of FIG. 95, and as shown in FIGS. 95 and 96, an insulating layer 45 is formed on the transparent conductive film 60.
  • the insulating layer 45 extends from the transmissive conductive film 60 between the grooves 35 to the inner surface of the groove 35 to expose the first semiconductor layer 30 of the groove 35. Thereafter, the connection electrode 85 is formed on the insulating layer 45 to be in electrical communication with the first semiconductor layer of the groove 35. In addition, contact electrodes 75 and 76 are formed on the transparent conductive film 60 corresponding to the light absorption prevention film 41. Thereafter, the non-conductive reflecting film R is formed, and the first electrical connecting portion 81, the second electrical connecting portion 71, the first electrode 80, and the second electrode 70 are formed.
  • the transparent conductive film 60 is also formed under the insulating layer 45 between the plurality of grooves 35, so that the insulating layer 45 and the transparent conductive film 60 are formed in different regions when viewed in plan view. In comparison with the case, it may be more advantageous for current spreading. In addition, since the insulating layer 45 is formed on the transparent conductive film 60, the shape and position of the connection electrode 85, as compared with the case where the insulating layer 45 and the transparent conductive film 60 are formed in different regions. Is more free to design.
  • FIG. 97 to 99 are diagrams for describing another example of the semiconductor light emitting device according to the present disclosure.
  • a plurality of grooves (not shown) are formed in the semiconductor layers 30, 40, and 50. 35 is formed, an insulating layer 45 is formed, and a connection electrode 85 is formed on the insulating layer 45.
  • FIG. 98 the light absorption prevention film 41 and an additional insulating layer 48 covering the connection electrode 85 are formed.
  • the light absorption prevention layer 41 and the additional insulating layer 48 may be formed together of the same material. Thereafter, as shown in FIG.
  • a transparent conductive film 60 is formed to cover the additional insulating layer 48, the light absorption prevention film 41, and the second semiconductor layer 50.
  • Contact electrodes 75, 76, and 78 are formed on the light-transmissive conductive film 60 to correspond to the light absorption prevention film 41.
  • the contact electrodes 75, 76, and 78 are formed with a branched contact electrode 75, a dot type contact electrode 76, and a transverse type contact electrode 78.
  • the transverse contact electrode 78 extends in the extending direction of the long edges of the plurality of semiconductor layers 30, 40, and 50, and connects the plurality of branched contact electrodes 75.
  • the non-conductive reflecting film R is formed, and the first electrical connecting portion 81, the second electrical connecting portion 71, the first electrode 80, and the second electrode 70 are formed. Since the connecting electrode 85 is insulated by the additional insulating layer 48, a translucent conductive film 60 is formed over the connecting electrode 85, and a transverse contact electrode 78 is formed over the connecting electrode 85. Can be. That is, the degree of freedom in designing the contact electrode is large.
  • the non-conductive reflecting film R between the first electrode 80 and the second electrode 70 due to the transverse contact electrode 78 may have a dam portion protruding due to the transverse contact electrode 78. have.
  • first electrode 80 and the second electrode 70 are bonded to an external electrode by a bonding material such as solder or directly to the external electrode, a migration phenomenon in which the material moves between the first electrode 80 and the second electrode 70. This can cause defects such as phenomena when used for a long time.
  • the protruding portion or dam has an effect of preventing the failure by inhibiting such migration.
  • FIG. 100 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • a plurality of grooves 35 are formed in the plurality of semiconductor layers 30, 40, and 50.
  • the light-transmitting conductive film 60 is formed avoiding the groove 35.
  • an insulating layer 45 is formed on the inner surface of the groove 35 and the periphery of the groove 35, and with this, the light absorption prevention layer 41 is formed on the transparent conductive film 60.
  • an additional transmissive conductive layer 61 is formed to cover the light absorption prevention layer 41 and to conduct with the transmissive conductive layer 60.
  • a connecting electrode 85 is formed which is in contact with the first semiconductor layer exposed by the groove 35, and at the same time, the contact electrode () is formed on the additional transmissive conductive film 61 in response to the light absorption prevention film 41. 75) is formed. Thereafter, a non-conductive reflecting film, an electrical connection portion, and an electrode are formed.
  • the light-transmitting conductive film 60 is formed under both the light absorption prevention film 41 and the insulating layer 45 to provide a semiconductor light emitting element having a structure for good current diffusion.
  • the configuration in which the light-transmissive conductive film 60 is formed under the light absorption prevention film 41 and the additional light-transmissive conductive film 61 is formed is shown in FIGS. 91, 93, and 98.
  • the light-transmissive conductive film 60 may be formed before, and the additional light-transmissive conductive film 61 may be provided thereafter.
  • the semiconductor light emitting element has a plurality of light emitting portions.
  • the plurality of semiconductor layers 30, 40, and 50 may be mesa-etched to separate the first light emitting portion 101 and the second light emitting portion 102 from the substrate 10 to the non-conductive reflective film R. It is formed to be covered by.
  • the first electrode 80 and the first electrical connection portion 81 are formed in the first light emitting portion 101, and the second electrode 70 and the second electrical connection portion 71 are formed in the second light emitting portion 102. Is formed.
  • the plurality of grooves 35 are formed in the plurality of semiconductor layers 30, 40, and 50 of the second light emitting part 102.
  • the insulating layer 45 is formed between the second light emitting part 102, the second light emitting part 102 and the first light emitting part 101, and the second semiconductor layer 50 of the first light emitting part 101. It extends between the membranes 60.
  • the connection electrode 85 is formed along the insulating layer 45, and the first semiconductor layer 30 and the second semiconductor of the first light emitting part 101 exposed to the groove 35 of the second light emitting part 102.
  • Layer 50 is electrically connected.
  • FIG. 103 and 104 are diagrams for describing another example of the semiconductor light emitting device according to the present disclosure, and FIG. 104 illustrates an example of a cross section taken along the line D-D of FIG. 103.
  • the above examples are examples of flip chips, but the present example is an example in which the technical idea of the present disclosure is applied to a lateral chip.
  • a plurality of semiconductor layers 30, 40, 50 are formed on the substrate 10, and a plurality of grooves 35 are formed in the plurality of semiconductor layers 30, 40, 50.
  • the transparent conductive film 60 is formed on the second semiconductor layer 50 so as to expose the plurality of grooves 35.
  • the insulating layer 45 is formed on the inner surface of each groove 35 and the transmissive conductive film 60 between the plurality of grooves 35.
  • connection electrode 85 is formed on the insulating layer 45 and is connected to the first semiconductor layer 30 exposed through the grooves 35.
  • the contact electrode 70 is formed on the light-transmissive conductive film 60 to be conductive with the second semiconductor layer 50.
  • a pad portion 80 is formed at one end of the connection electrode 85, and the pad portion 80 may be a portion for wire bonding.
  • the passivation layer 90 covers and protects the remaining regions except for the contact electrode 70 and the pad portion 80.
  • the insulating layer 45 functions not only as insulation but also as a light absorption prevention film to reduce light absorption by the connection electrode 85.
  • the insulating layer 45 instead of etching the plurality of semiconductor layers 30, 40, and 50 corresponding to the entirety of the connection electrode 85, only the portion corresponding to the groove 35 is etched, thereby reducing the area of the active layer 40.
  • the technical idea according to the present disclosure may be applied to flip chips, lateral chips, and other types of chips.
  • a semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and interposed between the first semiconductor layer and the second semiconductor layer and having electrons and holes
  • a plurality of semiconductor layers having an active layer for generating light through recombination of and grown using a growth substrate;
  • a nonconductive reflecting film bonded to the plurality of semiconductor layers on the opposite side of the growth substrate;
  • a light reflection layer provided between the non-conductive reflective film and reflecting light generated by the active layer and passing through the non-conductive reflective film, and between the bonding layer and the light reflection layer to prevent the light reflection material from penetrating into the bonding layer.
  • an electrode having a diffusion barrier layer comprising at least one of Pt, Ta, Mg, and Fe.
  • an additional electrode formed over the nonconductive reflecting film, the electrode having a bonding layer, a light reflection layer, and a diffusion barrier layer, similar to the electrode; wherein the electrode supplies one of electrons and holes to the first semiconductor layer, and further The electrode supplies the other one of electrons and holes to the second semiconductor layer, and the first electrode and the second electrode cover 50% or more of the area of the non-conductive reflecting film.
  • an additional bonding layer containing tin (Sn) formed over the bonding layer comprising: an additional bonding layer bonded to the bonding material; And an anti-oxidation layer formed over the additional bonding layer.
  • a top layer formed over the bonding layer comprising: an additional bonding layer substantially free of gold (Au) and containing tin (Sn) and heat treated.
  • a semiconductor light emitting element having a structure in which a lower electrode layer and an upper electrode layer are repeatedly stacked.
  • a semiconductor light emitting device characterized in that the bonding layer is made of Ni and the light reflection layer is made of Al.
  • a semiconductor light emitting device formed by cutting a wafer on which a plurality of semiconductor light emitting chips are formed for each semiconductor light emitting chip, wherein the first semiconductor layer has a first conductivity and the second semiconductor layer has a second conductivity different from the first conductivity.
  • a semiconductor light emitting element wherein at least a portion of the upper structure, the plurality of semiconductor layers, and the growth substrate are further removed from the cutout portion as compared with the first cut surface side and the second cut surface side.
  • a semiconductor light emitting element wherein the semiconductor light emitting element is a flip chip element, the upper layer including an insulating reflecting film that reflects light from the active layer, wherein at least a portion of the insulating reflecting film is removed to form a cutout portion.
  • the semiconductor light emitting device is any one of a horizontal device and a vertical device, wherein an upper layer includes a dielectric layer, and at least a portion of the dielectric layer is removed to form a cutout portion.
  • Semiconductor light emitting device is any one of a horizontal device and a vertical device, wherein an upper layer includes a dielectric layer, and at least a portion of the dielectric layer is removed to form a cutout portion.
  • a semiconductor light emitting element characterized in that the cutout portion has a portion of a circle, a portion of a polygon, or an L shape in plan view.
  • a semiconductor light emitting element characterized in that an additional cutout is formed in at least one of the first cut face side and the second cut face side in plan view.
  • the at least one electrode includes: a first electrode provided on an opposite side of the plurality of semiconductor layers on the basis of the insulating reflective film and supplying one of electrons and holes to the first semiconductor layer; A second electrode provided on an opposite side of the plurality of semiconductor layers on the basis of the insulating reflective film and supplying the other one of electrons and holes to the second semiconductor layer; A first electrical connection penetrating the insulating reflective film to electrically connect the first electrode and the first semiconductor layer; And a second electrical connection penetrating the insulating reflective film to electrically connect the second electrode and the second semiconductor layer, wherein the first electrical connection is electrically connected to the first semiconductor layer and the first electrical connection exposed by the cutout part.
  • a semiconductor light emitting element characterized in that the semiconductor layer has the same height.
  • a method of manufacturing a semiconductor light emitting device wherein a semiconductor light emitting device is formed by cutting a wafer on which a plurality of semiconductor light emitting chips are formed for each semiconductor light emitting chip, the first semiconductor layer having a first conductivity on a growth substrate, and a second conductivity different from the first conductivity; Forming a plurality of semiconductor layers including a second semiconductor layer having an active layer interposed between the first semiconductor layer and the second semiconductor layer, the active layer generating light through recombination of electrons and holes; Forming an upper structure having at least one electrode electrically connected to the plurality of semiconductor layers, and an upper layer exposing the at least one electrode and covering the plurality of semiconductor layers; Forming grooves by removing at least a portion of the upper structure, the plurality of semiconductor layers, and the growth substrate at each intersection of cutting lines for cutting the wafer for each semiconductor light emitting chip, so as to prevent overlapping impacts during cutting; And cutting the wafer for each semiconductor light emitting chip along the cutting lines.
  • a method for manufacturing a semiconductor light emitting device comprising the steps of forming a groove, further removing at least a portion of an upper structure, a plurality of semiconductor layers, and a growth substrate from the groove, as compared to cutting lines other than the intersections.
  • the upper layer is formed so as to cover the plurality of semiconductor light emitting chip regions and the plurality of semiconductor light emitting chip regions, and in the forming of the groove, the upper layer corresponding to each intersection point of the cutting lines. At least a part of the manufacturing method of the semiconductor light emitting device, characterized in that removed.
  • the semiconductor light emitting device is a flip chip device, wherein the upper layer includes an insulating reflecting film that reflects light from the active layer, and in the step of forming a groove, at least a part of the insulating reflecting film corresponding to each intersection point of the cutting lines is removed.
  • the insulating reflective film is a semiconductor light emitting device, characterized in that the cutting along the cutting line.
  • the semiconductor light emitting element is any one of a horizontal device and a vertical device.
  • the upper layer includes a dielectric layer that exposes the electrode and covers the plurality of semiconductor layers. And forming a groove, wherein at least a portion of the dielectric layer corresponding to each intersection point of the cutting lines is removed, and in the cutting step, the dielectric layer is cut along the cutting line.
  • the semiconductor light emitting element is cut so as to have a cutout portion as a part of the groove in the corner of the semiconductor light emitting element, and the cutout portion is viewed in a plan view.
  • the method of manufacturing a semiconductor light emitting device characterized in that it has a part of, a part of a polygon or an L shape.
  • an opening exposing the first semiconductor layer is formed in each semiconductor light emitting portion, and the step of forming at least one electrode includes: a plurality of semiconductor layers based on the insulating reflective film A first electrode formed on the opposite side of the first electrode; a first electrical connection formed in the opening to electrically connect the first semiconductor layer and the first electrode; a second electrode formed on the opposite side of the plurality of semiconductor layers based on the insulating reflective film And forming a second electrical connection through the insulating reflective film to electrically connect the second semiconductor layer and the second electrode.
  • a method of manufacturing a semiconductor light emitting device characterized in that the first semiconductor layer exposed by the groove and the first semiconductor layer electrically connected to the first electrical connection have the same height.
  • the upper layer is not formed between the plurality of semiconductor light emitting chip regions, but is formed only in each of the semiconductor light emitting chip regions, and in the forming of the groove, the plurality of semiconductor layers at the intersections of the cutting lines. Or at least a portion of the growth substrate is removed.
  • a semiconductor light emitting element comprising: a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and interposed between the first semiconductor layer and the second semiconductor layer And a plurality of semiconductor layers having an active layer that generates light by recombination of holes; A first electrode provided at one side of the plurality of semiconductor layers and supplying one of electrons and holes to the first semiconductor layer; A second electrode provided at one side of the plurality of semiconductor layers and supplying the other one of electrons and holes to the second semiconductor layer; And a bank formed between the first electrode and the second electrode, wherein the bank is electrically separated from the first electrode and the second electrode.
  • a semiconductor light emitting element characterized in that the width of the weir in the direction from the first electrode to the second electrode is smaller than the width of the first electrode and smaller than the width of the second electrode.
  • a semiconductor light emitting device characterized in that the weir extends between an edge of the first electrode and an edge of the second electrode which face each other.
  • the semiconductor light emitting element characterized in that the dam is made of a conductor, a dielectric, or a combination thereof.
  • the length of the weir is longer than an edge of the first electrode and an edge of the second electrode opposing each other.
  • an insulating reflective film that reflects light from the active layer; wherein the first electrode and the second electrode are located on opposite sides of the plurality of semiconductor layers with respect to the insulating reflective film, and the weir is formed of the first electrode facing each other. It consists of a conductor, a dielectric, or a combination of these on an insulating reflective layer between an edge and an edge of the second electrode, the width of which is in the direction from the first electrode to the second electrode. The width of is smaller than the width of the first electrode, the semiconductor light emitting device, characterized in that less than the width of the second electrode.
  • a substrate having a first electrode and a second electrode fixed thereto, the substrate having a first conductive portion to which the first electrode is bonded and a second conductive portion to which the second electrode is bonded;
  • a semiconductor light emitting device characterized in that not in contact.
  • a semiconductor light emitting element characterized in that a groove is formed by etching the insulating reflective film.
  • a semiconductor light emitting device characterized in that a plurality of semiconductor layers under the groove are mesa-etched, and grooves are formed due to the height difference due to the mesa etching.
  • a semiconductor light emitting element comprising: a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and interposed between the first semiconductor layer and the second semiconductor layer And a plurality of semiconductor layers having an active layer that generates light by recombination of holes; A first extended electrode formed on the etched and exposed first semiconductor layer; An insulating reflective film formed over the plurality of semiconductor layers to cover the first elongated electrode and reflecting light from the active layer; A first electrode formed on the insulating reflective film and configured to supply one of electrons and holes to the first semiconductor layer through the first extended electrode; And a second electrode formed on the insulating reflective film and supplying the other one of electrons and holes to the second semiconductor layer, wherein the first extended electrode does not overlap with the second electrode in a plan view.
  • a semiconductor light emitting device characterized in that extending between the electrode and the second electrode.
  • the first elongated electrode is a semiconductor light emitting device, characterized in that located in the closed loop.
  • the first extended electrode includes: a first branch extending along an edge of the first electrode or the second electrode between the first electrode and the second electrode; And a second branch protruding from the first branch and extending below the first electrode.
  • a semiconductor light emitting element wherein a groove in which an insulating reflective film is recessed corresponding to the first elongated electrode is formed to elongate between the first electrode and the second electrode.
  • the semiconductor light emitting device includes two long edges facing each other and two short edges facing each other, and the first electrode extends along one side long edge near one of the two long edges. And a second electrode is formed long along the other long edge near the other long edge of the two long edges, and the first extended electrode is short from the short edge of one of the two short edges to the other short.
  • a semiconductor light emitting device characterized in that extending in the direction toward the edge.
  • the semiconductor light emitting device has a first edge and a second edge facing each other, a third edge and a fourth edge facing each other, the first electrode on the first edge side, and the second electrode on the second edge side.
  • the second elongate electrode comprising: a first branch extending along a third edge; A second branch extending along the fourth edge; And a third branch extending along the first edge and connecting the first branch and the second branch.
  • the first extended electrode includes: at least one first branch extending in a direction from the third edge to the fourth edge between the first electrode and the second electrode; And a second branch protruding from each first branch and extending below the first electrode.
  • a semiconductor light emitting device characterized in that connected to each of the two.
  • the second extended electrode includes: a fourth branch connected to a plurality of second electrical connections and connected to the first branch and the second branch of the second extended electrode.
  • the second electrode has a closed loop shape, and the first extended electrode is located inside the closed loop of the second electrode, and at least connects the first electrode and the first extended electrode electrically through the insulating reflective film.
  • a semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and interposed between the first semiconductor layer and the second semiconductor layer and having electrons and holes A plurality of semiconductor layers having an active layer for generating light through recombination of the plurality of semiconductor layers, the plurality of semiconductor layers having etched or cut sides; A non-conductive reflecting film formed over the plurality of semiconductor layers to reflect light generated in the active layer toward the growth substrate; A first electrode formed on the nonconductive reflecting film and supplying one of electrons and holes to the first semiconductor layer; And a second electrode formed on the non-conductive reflective film so as to face the first electrode and supplying the other one of electrons and holes to the second semiconductor layer.
  • the first electrode and the first electrode may be viewed in a top view.
  • the distance between the two electrodes and the side surfaces of the plurality of semiconductor layers is 50 ⁇ m or more, so that cracks generated in the non-conductive reflective film are prevented from propagating to the first electrode and the second electrode.
  • a semiconductor light emitting element wherein a distance between the first electrode and the second electrode is 80 ⁇ m or more.
  • the ratio of the area of the sum of the first electrode and the second electrode to the planar area of the semiconductor light emitting element is 0.7 or less.
  • a semiconductor light emitting element according to claim 1, wherein the ratio of the distance between the first electrode and the second electrode to the side surfaces of the plurality of semiconductor layers is 0.5 to 5.0.
  • a non-conductive reflector (R) comprises at least one of a distributed Bragg reflector and an Omni-Directional Reflector (ODR).
  • ODR Omni-Directional Reflector
  • the side surfaces of the plurality of semiconductor layers are mesa-etched surfaces, and the distance from the side surfaces of the plurality of semiconductor layers to the edges of the first electrode and the second electrode is greater than or equal to the distance between the first electrode and the second electrode.
  • Semiconductor light emitting device Semiconductor light emitting device.
  • the plurality of semiconductor layers have edges formed by mesa etching, and the non-conductive reflective film is formed to cover the edges, and edges of the first electrode and the second electrode are 50 ⁇ m or more away from the edges. .
  • a semiconductor light emitting element characterized in that a cutout is formed in the first electrode and the second electrode corresponding to the crack bundle position.
  • a first branch electrode formed on the first semiconductor layer that is mesa-etched and extends below the second electrode under the first electrode; And a first electrical connection penetrating the nonconductive reflecting film to connect the first electrode and the first branch electrode. And an additional first electrical connection positioned between the first electrical connection and the edge of the first electrode on an extension line of the first branch electrode, the first electrical connection electrically connecting the first electrode and the first semiconductor layer.
  • the distance between the first electrical connection and the additional first electrical connection is 500 ⁇ m or less, and the distance between the additional first electrical connection and the side surfaces of the plurality of mesa-etched semiconductor layers is 50 ⁇ m or more. device.
  • a semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an electron interposed between the first semiconductor layer and the second semiconductor layer And a plurality of semiconductor layers having an active layer that generates light by recombination of holes and holes, the plurality of semiconductor layers having a plurality of grooves exposing the first semiconductor layer; An insulating layer extending over the second semiconductor layer and extending to the side of each groove and exposing the first semiconductor layer of each groove; A connection electrode extending over the insulating layer and electrically connected to the first semiconductor layer of each groove to supply one of electrons and holes; And a contact electrode formed on the second semiconductor layer to supply the other one of electrons and holes to the second semiconductor layer.
  • a non-conductive reflecting film formed to cover the connecting electrode and the contact electrode and reflecting light from the active layer; A first electrode and a second electrode formed on the nonconductive reflecting film; A first electrical connector penetrating the non-conductive reflective film to electrically connect the first electrode and the connection electrode; And a second electrical connector penetrating the non-conductive reflective film to electrically connect the second electrode and the contact electrode.
  • the insulating layer is formed from the inner side of one groove to the inner side of the second semiconductor layer and the other groove, and the connecting electrode extends in the form of a band on the insulating layer and is exposed to each groove.
  • a semiconductor light emitting element characterized by being electrically conductive to a layer.
  • connection electrodes In a plan view, it has a plurality of connection electrodes and a plurality of contact electrodes, each connection electrode has a band shape, the plurality of connection electrodes are arranged in a plurality of rows, and the plurality of contact electrodes are a plurality of connection electrodes. And at least one of a branch contact electrode disposed alternately with a dot contact electrode, and a dot contact electrode.
  • the contact electrode can intersect the connecting electrode.
  • connection electrodes has a band shape
  • the plurality of connection electrodes are arranged in a plurality of rows
  • the plurality of contact electrodes include branched contact electrodes alternately arranged with the plurality of connection electrodes, and a dot contact electrode.
  • a first electrical connection portion connected to a connection electrode on the second semiconductor layer.
  • a semiconductor light emitting device comprising: a light absorption preventing film formed between the second semiconductor layer and the transparent conductive film corresponding to the contact electrode to reflect light from the active layer.
  • the plurality of semiconductor layers are formed so as to be separated on the substrate into a first light emitting portion and a second light emitting portion and covered by a non-conductive reflective film, the first electrode and the first electrical connection portion are formed on the first light emitting portion, The second electrode and the second electrical connection part are formed in the second light emitting part, the plurality of grooves are formed in the plurality of semiconductor layers of the second light emitting part, and the insulating layer is the second light emitting part, the second light emitting part and the first light emitting part.
  • connection electrode Extending between the portions and over the second semiconductor layer of the first light emitting portion, wherein the connection electrode is formed along the insulating layer, and electrically connects the first semiconductor layer exposed to the groove of the second light emitting portion and the second semiconductor layer of the first light emitting portion.
  • a semiconductor light emitting device characterized in that for connecting.
  • a semiconductor light emitting device having an electrode structure having improved bonding strength at bonding is provided.
  • the high degree of freedom of design of the electrical connection or the branch electrode is advantageous for uniformly supplying current.
  • the light emitting area is reduced by the n-contact region while the extended electrode is provided for current diffusion, and the length of the extended electrode is relatively short, so that the light absorption loss is reduced.
  • a reduced semiconductor light emitting device is provided.
  • the electro-migration between the solder bumps to which the first electrode and the second electrode of the semiconductor light emitting device are bonded is prevented, thereby improving reliability in prolonged use of the semiconductor light emitting device. do.
  • a package including a plurality of semiconductor light emitting devices can be compactly formed.
  • light absorption loss is reduced by using an insulating reflective film instead of a metal reflective film.
  • peeling of the electrode due to cracks on the non-conductive reflective film peeling of the electrode due to cracks on the non-conductive reflective film, lateral invasion of the semiconductor light emitting element of the solder can be suppressed, and light loss caused by the electrode can be reduced.
  • a semiconductor light emitting device having improved luminance by reducing etching areas of a plurality of semiconductor layers is provided.
  • connection electrode and the contact electrode are formed together at the same level, and there is no need for a process such as forming a separate insulating layer for forming them on different layers.
  • the light absorption loss caused by the metal reflective film is reduced by using the non-conductive reflective film.

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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Abstract

L'invention concerne un élément électroluminescent semiconducteur (dispositif électroluminescent semiconducteur) qui comprend : une couche de liaison qui est reliée à une substance de liaison pendant la jonction (liaison) et qui contient au moins l'un des éléments du groupe constitué par Ni, Cu, NiAg et Be; une couche réfléchissant la lumière qui est prévue entre la couche de liaison et un film réfléchissant non électroconducteur, et qui réfléchit la lumière qui est créée dans une couche active et qui traverse puis ressort du film réfléchissant non électroconducteur; et une électrode qui est prévue entre la couche de liaison et la couche réfléchissant la lumière de manière à empêcher des substances de la couche réfléchissant la lumière de pénétrer dans la couche de liaison, et qui est dotée d'une couche empêchant la diffusion comprenant au moins l'un des éléments du groupe constitué par Ti, Cr, Pt, Ta, Mg et Fe.
PCT/KR2016/006547 2015-06-18 2016-06-20 Élément électroluminescent semiconducteur WO2016204594A1 (fr)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
KR1020150086790A KR101678063B1 (ko) 2015-06-18 2015-06-18 반도체 발광소자, 및 이의 제조방법
KR10-2015-0086790 2015-06-18
KR10-2015-0087505 2015-06-19
KR1020150087506A KR101700306B1 (ko) 2015-06-19 2015-06-19 반도체 발광소자
KR10-2015-0087506 2015-06-19
KR1020150087505A KR101689344B1 (ko) 2015-06-19 2015-06-19 반도체 발광소자
KR10-2015-0088357 2015-06-22
KR1020150088357A KR20170000019A (ko) 2015-06-22 2015-06-22 반도체 발광소자
KR10-2015-0089167 2015-06-23
KR1020150089167A KR101697960B1 (ko) 2015-06-23 2015-06-23 반도체 발광소자
KR10-2015-0089876 2015-06-24
KR1020150089876A KR101753750B1 (ko) 2015-06-24 2015-06-24 반도체 발광소자

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050075076A (ko) * 2004-01-15 2005-07-20 학교법인 포항공과대학교 질화갈륨계 ⅲ­ⅴ족 화합물 반도체 소자 및 그 제조방법
US20050179051A1 (en) * 1997-12-15 2005-08-18 You Kondoh III-Nitride semiconductor light emitting device having a silver p-contact
US20070181906A1 (en) * 2005-12-28 2007-08-09 George Chik Carbon passivation in solid-state light emitters
JP2013214426A (ja) * 2012-04-03 2013-10-17 Nippon Electric Glass Co Ltd 波長変換部材及び発光デバイス
KR20150055390A (ko) * 2013-11-13 2015-05-21 주식회사 세미콘라이트 반도체 발광소자

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050179051A1 (en) * 1997-12-15 2005-08-18 You Kondoh III-Nitride semiconductor light emitting device having a silver p-contact
KR20050075076A (ko) * 2004-01-15 2005-07-20 학교법인 포항공과대학교 질화갈륨계 ⅲ­ⅴ족 화합물 반도체 소자 및 그 제조방법
US20070181906A1 (en) * 2005-12-28 2007-08-09 George Chik Carbon passivation in solid-state light emitters
JP2013214426A (ja) * 2012-04-03 2013-10-17 Nippon Electric Glass Co Ltd 波長変換部材及び発光デバイス
KR20150055390A (ko) * 2013-11-13 2015-05-21 주식회사 세미콘라이트 반도체 발광소자

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