WO2016201726A1 - 一种基于量子点的电致发光器件及显示装置 - Google Patents

一种基于量子点的电致发光器件及显示装置 Download PDF

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WO2016201726A1
WO2016201726A1 PCT/CN2015/082720 CN2015082720W WO2016201726A1 WO 2016201726 A1 WO2016201726 A1 WO 2016201726A1 CN 2015082720 W CN2015082720 W CN 2015082720W WO 2016201726 A1 WO2016201726 A1 WO 2016201726A1
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quantum dot
layer
dot light
electrode layer
light emitting
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程艳
郭伟
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Wuhan China Star Optoelectronics Technology Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details

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  • the present invention relates to the field of display technologies, and in particular, to a quantum dot-based electroluminescent device and a display device.
  • OLED Organic electroluminescent device
  • Quantum dots also known as semiconductor nanocrystals, are a new type of nano-fluorescent material that has many advantages over traditional organic fluorescent dyes, such as a wide excitation spectrum, narrow and symmetric emission spectra.
  • the fluorescent intensity is high, and the quantum dot luminescent material can be excited to generate light of various colors to achieve different display effects.
  • the prior art generally uses a quantum dot film to attach to the surface of the backlight unit to enhance the display effect, how to maximize the advantages of the quantum dot to be applied to the display technology, and to improve the color gamut and display quality of the display device.
  • Point display is one of the main development directions in the technical field.
  • the present invention provides a quantum dot-based electroluminescent device and display device having excellent color gamut and display quality.
  • An electroluminescent device based on a quantum dot comprising a positive electrode layer, a negative electrode layer, and a multi-layer quantum dot light-emitting layer interposed between the positive electrode layer and the negative electrode layer, the positive electrode layer and A hole transport layer is disposed between the quantum dot light-emitting layers, and an electron transport layer is disposed between the negative electrode layer and the quantum dot light-emitting layer.
  • the quantum dot luminescent layer comprises a first quantum dot luminescent layer, a second quantum dot luminescent layer and a
  • the three-quantum dot light-emitting layer has different colors of light generated by the excitation of the first quantum dot light-emitting layer, the second quantum dot light-emitting layer, and the third quantum dot light-emitting layer.
  • the first quantum dot luminescent layer, the second quantum dot luminescent layer, and the third quantum dot luminescent layer are a red quantum dot emitting layer, a green quantum dot emitting layer, and a blue quantum dot emitting layer, respectively.
  • the plurality of quantum dot light emitting layers are stacked, and the hole transport layer and the electron transport layer are disposed between each two adjacent quantum dot light emitting layers.
  • a plurality of the quantum dot light-emitting layers are arranged side by side in the width direction of the positive electrode layer between the positive electrode layer and the negative electrode layer, and each of the two sides of the quantum dot light-emitting layer has a thickness direction
  • the hole transport layer that is in close contact with the positive electrode layer and the electron transport layer that is in close contact with the negative electrode layer are provided.
  • a light shielding layer is disposed between each of the two quantum dot emitting layers.
  • each of the light shielding layers separates the hole transport layer and the electron transport layer of two adjacent quantum dot light emitting layers.
  • Another object of the present invention is to provide a display device using the above-described quantum dot-based electroluminescent device as a light source.
  • the invention replaces the existing organic light-emitting material with the quantum dot material as the light-emitting layer, and can realize the realization of various color display effects conveniently by controlling the size of the quantum dots; and is provided with an empty space between the positive electrode layer and the quantum dot light-emitting layer.
  • An electron transport layer is disposed between the hole transport layer, the negative electrode layer and the quantum dot light-emitting layer to accelerate the transmission speed of electrons and holes between the positive and negative electrode layers, so that the electroluminescent device has better color gamut and display quality. .
  • FIG. 1 is a schematic structural view of an electroluminescent device according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic structural view of an electroluminescent device according to Embodiment 2 of the present invention.
  • a quantum dot-based electroluminescent device of the present invention comprises a positive electrode layer 1, a negative electrode layer 2, and a multi-layer quantum dot light-emitting layer interposed between the positive electrode layer 1 and the negative electrode layer 2, in the positive electrode.
  • a hole transport layer 6a is disposed between the electrode layer 1 and the quantum dot light-emitting layer
  • an electron transport layer 6b is disposed between the negative electrode layer 2 and the quantum dot light-emitting layer.
  • the electroluminescent device can be widely used as a backlight. In the display device.
  • the quantum dot light emitting layer includes a first quantum dot light emitting layer 3, a second quantum dot light emitting layer 4, and a third quantum dot light emitting layer 5, and the first quantum dot light emitting layer 3, the second quantum dot light emitting layer 4, and the third quantum dot The color of the light generated by the excitation layer 5 is different.
  • the first quantum dot luminescent layer 3, the second quantum dot luminescent layer 4, and the third quantum dot luminescent layer 5 are a red quantum dot emitting layer, a green quantum dot emitting layer, and a blue quantum dot emitting layer, respectively.
  • the dot light emitting layer is stacked on top of each other between the positive electrode layer 1 and the negative electrode layer 2, and is arranged between each adjacent quantum dot light emitting layer in order to accelerate the transmission speed of electrons and holes between the positive and negative electrode layers.
  • the hole transport layer 6a and the electron transport layer 6b between each two quantum dot light-emitting layers respectively transmit electrons and holes excited by an electric field to adjacent quantum dot light-emitting layers, respectively, and the positive electrode layer 1 is respectively.
  • the holes and electrons injected into the negative electrode layer 2 are combined in different quantum dot light-emitting layers to produce different light colors to form white light.
  • the quantum dot material is used to replace the existing organic light-emitting material as the light-emitting layer, and the quantum dot light-emitting layer includes the dielectric layers of the three primary colors, the size of the quantum dots can be conveniently controlled by the display device to realize various color display effects. Implementation.
  • FIG. 2 is a schematic structural view of an electroluminescent device of the present embodiment.
  • the multilayer quantum dot light-emitting layer of the present embodiment is arranged differently, and specifically, the plurality of quantum dot light-emitting layers are arranged side by side in the width direction of the positive electrode layer 1 on the positive electrode layer 1 and the negative electrode layer. Between the two, a hole transport layer 6a which is in close contact with the positive electrode layer 1 and an electron transport layer 6b which is in close contact with the negative electrode layer 2 are respectively disposed on both sides in the thickness direction of each of the quantum dot light-emitting layers.
  • a light shielding layer 7 is disposed between each of the two quantum dot emitting layers, and each of the light shielding layers 7 simultaneously emits two adjacent quantum dots.
  • the hole transport layer 6a of the layer is separated from the electron transport layer 6b.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种基于量子点的电致发光器件,包括正极电极层(1)、负极电极层(2)及夹设于所述正极电极层(1)和所述负极电极层(2)之间的多层量子点发光层,所述正极电极层(1)与所述量子点发光层之间设有空穴传输层(6a),所述负极电极层(2)与所述量子点发光层之间设有电子传输层(6b)。一种使用该电致发光器件的显示装置。利用量子点材料替换现有的有机发光材料作为发光层,可以方便地通过控制量子点的尺寸实现各种颜色显示效果的实现;并在正极电极层与量子点发光层之间设有空穴传输层,负极电极层与量子点发光层之间设有电子传输层,加速电子和空穴在正负电极层之间的传输速度,使电致发光器件具有更好的色域和显示品质。

Description

一种基于量子点的电致发光器件及显示装置 技术领域
本发明涉及显示技术领域,尤其涉及一种基于量子点的电致发光器件及显示装置。
背景技术
有机电致发光器件(OLED)被认为是下一代显示、照明技术的有力竞争者,与荧光灯相比它具有超轻超薄,大面积发、可折叠、色温可调、成本低等优点,在未来显示和照明领域的巨大发展潜力吸引了大量的研究工作者的关注,也加速了其产业化的进程。
量子点(quantum dots),又称半导体纳米晶体,作为一种新型的纳米荧光材料,它与传统的有机荧光染料相比有着很多的优点,例如很宽的激发光谱、较窄且对称的发射光谱、荧光强度高等优点,量子点发光材料受激发后可产生各种不同颜色的光从而实现不同的显示效果。现有技术通常利用量子点膜片贴付在背光单元表面以增强显示效果,如何最大化地将量子点的优点应用到显示技术中,使显示装置的色域以及显示品质更加完善,是目前量子点显示技术领域的主要发展方向之一。
发明内容
鉴于现有技术存在的不足,本发明提供了一种具有优良的色域以及显示品质的基于量子点的电致发光器件及显示装置。
为了实现上述的目的,本发明采用了如下的技术方案:
一种基于量子点的电致发光器件,包括正极电极层、负极电极层及夹设于所述正极电极层和所述负极电极层之间的多层量子点发光层,所述正极电极层与所述量子点发光层之间设有空穴传输层,所述负极电极层与所述量子点发光层之间设有电子传输层。
其中,所述量子点发光层包括第一量子点发光层、第二量子点发光层和第 三量子点发光层,所述第一量子点发光层、所述第二量子点发光层和所述第三量子点发光层受激发产生的光的颜色均不同。
其中,所述第一量子点发光层、所述第二量子点发光层和所述第三量子点发光层分别为红光量子点发光层、绿光量子点发光层和蓝光量子点发光层。
其中,多层所述量子点发光层堆叠设置,每两个相邻的所述量子点发光层之间设有所述空穴传输层和所述电子传输层。
或者,多层所述量子点发光层在所述正极电极层的宽度方向并排设置在所述正极电极层和所述负极电极层之间,每层所述量子点发光层的厚度方向两侧分别设有紧贴所述正极电极层的所述空穴传输层和紧贴所述负极电极层的所述电子传输层。
其中,每两个所述量子点发光层之间均设有遮光层。
其中,每个所述遮光层将相邻两个所述量子点发光层的所述空穴传输层和所述电子传输层隔开。
本发明的另一目的在于提供一种显示装置,使用上述的基于量子点的电致发光器件作为光源。
本发明利用量子点材料替换现有的有机发光材料作为发光层,可以方便地通过控制量子点的尺寸实现各种颜色显示效果的实现;并在正极电极层与量子点发光层之间设有空穴传输层,负极电极层与量子点发光层之间设有电子传输层,加速电子和空穴在正负电极层之间的传输速度,使电致发光器件具有更好的色域和显示品质。
附图说明
图1为本发明实施例1的电致发光器件结构示意图。
图2为本发明实施例2的电致发光器件结构示意图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
实施例1
参阅图1,本发明的基于量子点的电致发光器件包括正极电极层1、负极电极层2及夹设于正极电极层1和负极电极层2之间的多层量子点发光层,在正极电极层1与量子点发光层之间设有空穴传输层6a,负极电极层2与量子点发光层之间设有电子传输层6b,该电致发光器件可作为背光源广泛应用于各种显示装置中。
量子点发光层包括第一量子点发光层3、第二量子点发光层4和第三量子点发光层5,且第一量子点发光层3、第二量子点发光层4和第三量子点发光层5受激发产生的光的颜色均不同。本实施例中,第一量子点发光层3、第二量子点发光层4和第三量子点发光层5分别为红光量子点发光层、绿光量子点发光层和蓝光量子点发光层,这些量子点发光层上下堆叠设置在正极电极层1和负极电极层2之间,为了加快电子和空穴在正负电极层之间的传输速度,在每两个相邻的量子点发光层之间设有一层包括空穴传输层6a和电子传输层6b的传输层6,电子在电子传输层传输的更快,空穴在空穴传输层中传输得更快。每两个量子点发光层之间的空穴传输层6a和电子传输层6b分别把在电场作用下激发形成的电子和空穴分别传输到临近的量子点发光层,并分别将正极电极层1和负极电极层2注入的空穴和电子在不同的量子点发光层复合,以产生不同的光色结合形成白光。
本发明实施例由于使用了量子点材料替换现有的有机发光材料作为发光层,且量子点发光层包括了三原色的介质层,可以方便地通过显示装置控制量子点的尺寸实现各种颜色显示效果的实现。
实施例2
如图2所示,为本实施例的电致发光器件结构示意图。与实施例1不同的是,本实施例的多层量子点发光层排列方式不同,具体是将多层量子点发光层在正极电极层1的宽度方向并排设置在正极电极层1和负极电极层2之间,每层量子点发光层的厚度方向两侧分别设有紧贴正极电极层1的空穴传输层6a和紧贴负极电极层2的电子传输层6b。
为避免相邻的量子点发光层之间发生串光形成二次激发,每两个量子点发光层之间均设有遮光层7,每个遮光层7同时还将相邻两个量子点发光层的空穴传输层6a和电子传输层6b隔开。
以上所述仅是本申请的具体实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本申请原理的前提下,还可以做出若干改进和润饰, 这些改进和润饰也应视为本申请的保护范围。

Claims (20)

  1. 一种基于量子点的电致发光器件,其中,包括正极电极层、负极电极层及夹设于所述正极电极层和所述负极电极层之间的多层量子点发光层,所述正极电极层与所述量子点发光层之间设有空穴传输层,所述负极电极层与所述量子点发光层之间设有电子传输层。
  2. 根据权利要求1所述的基于量子点的电致发光器件,其中,所述量子点发光层包括第一量子点发光层、第二量子点发光层和第三量子点发光层,所述第一量子点发光层、所述第二量子点发光层和所述第三量子点发光层受激发产生的光的颜色均不同。
  3. 根据权利要求2所述的基于量子点的电致发光器件,其中,所述第一量子点发光层、所述第二量子点发光层和所述第三量子点发光层分别为红光量子点发光层、绿光量子点发光层和蓝光量子点发光层。
  4. 根据权利要求1所述的基于量子点的电致发光器件,其中,多层所述量子点发光层堆叠设置,每两个相邻的所述量子点发光层之间设有所述空穴传输层和所述电子传输层。
  5. 根据权利要求2所述的基于量子点的电致发光器件,其中,多层所述量子点发光层堆叠设置,每两个相邻的所述量子点发光层之间设有所述空穴传输层和所述电子传输层。
  6. 根据权利要求3所述的基于量子点的电致发光器件,其中,多层所述量子点发光层堆叠设置,每两个相邻的所述量子点发光层之间设有所述空穴传输层和所述电子传输层。
  7. 根据权利要求1所述的基于量子点的电致发光器件,其中,多层所述量子点发光层在所述正极电极层的宽度方向并排设置在所述正极电极层和所述负极电极层之间,每层所述量子点发光层的厚度方向两侧分别设有紧贴所述正极电极层的所述空穴传输层和紧贴所述负极电极层的所述电子传输层。
  8. 根据权利要求2所述的基于量子点的电致发光器件,其中,多层所述量子点发光层在所述正极电极层的宽度方向并排设置在所述正极电极层和所述负极电极层之间,每层所述量子点发光层的厚度方向两侧分别设有紧贴所述正极电极层的所述空穴传输层和紧贴所述负极电极层的所述电子传输层。
  9. 根据权利要求3所述的基于量子点的电致发光器件,其中,多层所述量子点发光层在所述正极电极层的宽度方向并排设置在所述正极电极层和所述负极电极层之间,每层所述量子点发光层的厚度方向两侧分别设有紧贴所述正极电极层的所述空穴传输层和紧贴所述负极电极层的所述电子传输层。
  10. 根据权利要求7所述的基于量子点的电致发光器件,其中,每两个所述量子点发光层之间均设有遮光层。
  11. 根据权利要求10所述的基于量子点的电致发光器件,其中,每个所述遮光层将相邻两个所述量子点发光层的所述空穴传输层和所述电子传输层隔开。
  12. 根据权利要求8所述的基于量子点的电致发光器件,其中,每两个所述量子点发光层之间均设有遮光层。
  13. 根据权利要求12所述的基于量子点的电致发光器件,其中,每个所述遮光层将相邻两个所述量子点发光层的所述空穴传输层和所述电子传输层隔开。
  14. 一种显示装置,其中,使用基于量子点的电致发光器件作为光源,所述基于量子点的电致发光器件包括正极电极层、负极电极层及夹设于所述正极电极层和所述负极电极层之间的多层量子点发光层,所述正极电极层与所述量子点发光层之间设有空穴传输层,所述负极电极层与所述量子点发光层之间设有电子传输层。
  15. 根据权利要求14所述的显示装置,其中,所述量子点发光层包括第一量子点发光层、第二量子点发光层和第三量子点发光层,所述第一量子点发光层、所述第二量子点发光层和所述第三量子点发光层受激发产生的光的颜色均不同。
  16. 根据权利要求15所述的显示装置,其中,所述第一量子点发光层、所述第二量子点发光层和所述第三量子点发光层分别为红光量子点发光层、绿光量子点发光层和蓝光量子点发光层。
  17. 根据权利要求14所述的显示装置,其中,多层所述量子点发光层堆叠设置,每两个相邻的所述量子点发光层之间设有所述空穴传输层和所述电子传输层。
  18. 根据权利要求14所述的显示装置,其中,多层所述量子点发光层在所 述正极电极层的宽度方向并排设置在所述正极电极层和所述负极电极层之间,每层所述量子点发光层的厚度方向两侧分别设有紧贴所述正极电极层的所述空穴传输层和紧贴所述负极电极层的所述电子传输层。
  19. 根据权利要求18所述的显示装置,其中,每两个所述量子点发光层之间均设有遮光层。
  20. 根据权利要求19所述的显示装置,其中,每个所述遮光层将相邻两个所述量子点发光层的所述空穴传输层和所述电子传输层隔开。
PCT/CN2015/082720 2015-06-16 2015-06-30 一种基于量子点的电致发光器件及显示装置 Ceased WO2016201726A1 (zh)

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106816539B (zh) * 2016-12-08 2018-10-12 瑞声科技(南京)有限公司 量子点发光二极管装置及其制造方法
CN107046103A (zh) * 2017-01-18 2017-08-15 南方科技大学 叠层qled器件及其制备方法和应用
CN111384274B (zh) * 2018-12-29 2021-05-18 Tcl科技集团股份有限公司 一种量子点发光二极管及其制备方法
US11063098B2 (en) 2019-09-04 2021-07-13 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Method for fabricating display panel having carbon quantum dot layer
CN110707239A (zh) * 2019-09-04 2020-01-17 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
CN113130794B (zh) * 2019-12-31 2022-12-13 Tcl科技集团股份有限公司 一种量子点发光二极管及其制备方法
CN114628607A (zh) * 2022-03-18 2022-06-14 北京京东方技术开发有限公司 一种量子点发光层、发光器件及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100060156A1 (en) * 2006-03-30 2010-03-11 Canon Kabushiki Kaisha Display apparatus
CN101834277A (zh) * 2009-02-23 2010-09-15 三星电子株式会社 具有量子点多层的量子点发光器件及其形成方法
US20120248971A1 (en) * 2011-04-04 2012-10-04 Rohm Co., Ltd. Organic EL Device
WO2014088667A2 (en) * 2012-09-14 2014-06-12 Qd Vision, Inc. Light emitting device including tandem structure
CN104241553A (zh) * 2014-10-13 2014-12-24 深圳市华星光电技术有限公司 Oled器件的制备方法及其制得的oled器件

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103426986A (zh) * 2012-05-31 2013-12-04 上海理工大学 一种量子点电致发光器件以及制备方法和应用
KR20140010719A (ko) * 2012-07-16 2014-01-27 삼성전자주식회사 전하응집을 이용한 발광소자 및 그 제조방법
CN203250777U (zh) * 2013-05-27 2013-10-23 北京京东方光电科技有限公司 一种量子点发光二极管及显示器件
CN103730472B (zh) * 2013-12-25 2015-05-06 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN104868026B (zh) * 2015-05-22 2019-02-22 深圳市华星光电技术有限公司 量子点发光元件

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100060156A1 (en) * 2006-03-30 2010-03-11 Canon Kabushiki Kaisha Display apparatus
CN101834277A (zh) * 2009-02-23 2010-09-15 三星电子株式会社 具有量子点多层的量子点发光器件及其形成方法
US20120248971A1 (en) * 2011-04-04 2012-10-04 Rohm Co., Ltd. Organic EL Device
WO2014088667A2 (en) * 2012-09-14 2014-06-12 Qd Vision, Inc. Light emitting device including tandem structure
CN104241553A (zh) * 2014-10-13 2014-12-24 深圳市华星光电技术有限公司 Oled器件的制备方法及其制得的oled器件

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