WO2016194753A1 - Display device - Google Patents

Display device Download PDF

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Publication number
WO2016194753A1
WO2016194753A1 PCT/JP2016/065541 JP2016065541W WO2016194753A1 WO 2016194753 A1 WO2016194753 A1 WO 2016194753A1 JP 2016065541 W JP2016065541 W JP 2016065541W WO 2016194753 A1 WO2016194753 A1 WO 2016194753A1
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WIPO (PCT)
Prior art keywords
display device
electrode
layer
gate electrode
region
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PCT/JP2016/065541
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French (fr)
Japanese (ja)
Inventor
加藤 純男
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シャープ株式会社
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Priority to JP2015111528 priority Critical
Priority to JP2015-111528 priority
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Publication of WO2016194753A1 publication Critical patent/WO2016194753A1/en

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    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1339Gaskets; Spacers; Sealing of cells
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements

Abstract

A frame region (100f) of this display device (100) comprises a seal part (60s) and a transition part (60t) that electrically connects an active matrix substrate (10) and a counter substrate (30) with each other by means of conductive particles (62). A drive TFT (11A) provided in the frame region comprises a semiconductor layer (15), a first gate electrode (12gA), a source electrode (14sA), a drain electrode (14dA) and a second gate electrode (16gA) that is positioned opposite to the first gate electrode with respect to the semiconductor layer. In a display region (100d), the active matrix substrate has a projection structure that protrudes toward the counter substrate. In the frame region, the active matrix substrate has an insulating member (19) that is provided on the drive TFT and covers the second gate electrode. The insulating member is formed of the same dielectric film as the projection structure.

Description

Display device

The present invention relates to a display device.

Display device such as a liquid crystal display device includes, for example, an active matrix substrate, a counter substrate disposed so as to face the active matrix substrate, a display medium layer provided between the substrates and (for example, a liquid crystal layer) . Display area of ​​the display device is defined by a plurality of pixels included in the active matrix substrate.

A display device, a region other than the display area (e.g., area around the display region) that frame region or the non-display region. Frame region, for example, a switching element provided for each pixel (for example, a thin film transistor (Thin Film Transistor; hereinafter, "TFT")) driving circuit for driving the electrically connected to transfer the active matrix substrate and the opposing substrate parts, having a seal portion or the like which is formed from a sealing material for sealing a display medium (e.g., liquid crystal). Seal unit may combines the role of bonding the active matrix substrate and the counter substrate.

Recently, narrower frame of a display device, thinning, the request of such high performance (for example, a display device in combination with the touch panel (including the in-cell touch panel)) is growing. Among them, a narrow frame of the display device refers to narrowing of the frame region, for example, the above drive circuit section, by decreasing at least one of the area of ​​the transition portion and the sealing portion, a narrow frame is attained ing.

Patent Document 1, in the frame region, a sealing portion formed from a sealing material, the active matrix substrate and the counter substrate and electrically metastases composed of a conductor connecting, between the seal portion and metastasis It discloses a liquid crystal display device having a barrier. Barrier, when bonding the active matrix substrate and the counter substrate, a sealing material is prevented to cover the conductor, thereby preventing the poor conduction between the substrates occurs. The liquid crystal display device of Patent Document 1, the frame region, because it has a seal portion and the conductor and barrier separately, it is difficult to achieve a narrower frame.

In contrast, Patent Document 2, a sealing material containing conductive particles, discloses that formed as an integral seal portion and metastasis. Further, Patent Document 2, in order to prevent conduction between unintended both substrates by the conductive particles, discloses providing a short-circuit prevention pattern on the counter substrate.

Further, TFT constituting a driving circuit (hereinafter, sometimes referred to as "driving TFT".) As, by using a TFT having a high mobility, it is also possible to reduce the area of ​​the driver circuit portion. For example, TFT is used as the oxide semiconductor layer and the active layer (hereinafter, referred to as "oxide semiconductor TFT".) Since having a higher mobility than amorphous silicon, by using the oxide semiconductor TFT as a driving TFT, a narrow it is possible to reduce the frame size. However, the oxide semiconductor TFT, the characteristics fluctuate (e.g. the threshold voltage Vth is shifted) it is. Patent Document 3, in order to control the threshold voltage Vth of the oxide semiconductor TFT, additional gate electrode located on the opposite side of the gate electrode across the semiconductor layer (hereinafter sometimes referred to as a back gate electrode It discloses a.) providing a structure. The potential of the back gate electrode is different from the potential of the gate electrode, by fixing a predetermined value, it is described that can control the threshold voltage Vth of the TFT. Further, the potential of the back gate electrode by the same as the potential of the gate electrode, thereby improving the mobility of the TFT. Thus, the driving TFT is not limited to an oxide semiconductor TFT, it is also possible to narrow the frame.

JP 2006-268020 JP JP 2007-156414 JP JP 2010-251735 JP

At the request of the narrow frame, the present inventors have prototyped a display device, there is the reliability of the display device is lowered. According to the study of the present inventors, it was found that the conventional display device is caused a problem that did not occur. Details of which will be described later.

The present invention has been made in view of the above circumstances, and an object without increasing the number of manufacturing steps, with a narrow frame and is to provide a display device having excellent reliability.

Display device according to an embodiment of the present invention, an active matrix substrate, said a arranged a counter substrate so as to face the active matrix substrate, a display area defined by a plurality of pixels arranged in a matrix, a display device having a frame region surrounding the display region, the frame region includes a sealing portion surrounding the display area, electrically connecting the counter substrate and the active matrix substrate by the conductive particles and a transfer unit that, the active matrix substrate includes a drive TFT provided in the frame region, and a substrate for supporting the driving TFT, the driving TFT has a channel region, a source region and a drain region a semiconductor layer containing, overlap via the first insulating layer on the channel region of the semiconductor layer, the semiconductor layer and the Through a first gate electrode located between the plates, a source electrode and a drain electrode electrically connected to the source region and the drain region of the semiconductor layer, a second insulating layer on the channel region of the semiconductor layer overlap Te, and a second gate electrode located on the opposite side of the first gate electrode with respect to the semiconductor layer, in the display region, the active matrix substrate, the projection structures protruding on the opposed substrate side has a body, in the frame region, the active matrix substrate is provided on the driving TFT, an insulating member covering the second gate electrode, wherein the insulating member has the same dielectric as the protrusion structure It is formed from the membrane.

In some embodiments, the protrusion structure is a first columnar spacer for defining the distance between the opposing substrate and the active matrix substrate.

In some embodiments, the protrusion structure is lower second columnar spacer than the first columnar spacer for defining the distance between the opposing substrate and the active matrix substrate.

In certain embodiments, the second columnar spacer is formed from the same dielectric layer and said first columnar spacer.

In certain embodiments, the height of the insulating member is the height substantially the same as the protrusion structure.

Display device according to another embodiment of the present invention, the active matrix substrate, and an arranged opposing substrate so as to face the active matrix substrate, a display area defined by a plurality of pixels arranged in a matrix When, a display device having a frame region surrounding the display region, the frame region is electrically and the seal portion, the conductive particles and said counter substrate and said active matrix substrate surrounding the display region and a transition portion connected to said active matrix substrate includes a drive TFT provided in the frame region, and a substrate for supporting the driving TFT, the driving TFT has a channel region, a source region and a drain a semiconductor layer including a region overlapping via a first insulating layer on the channel region of the semiconductor layer, the semiconductor layer and A first gate electrode located between the serial board, and the source region and the source electrode and the drain electrode respectively in the drain region is electrically connected to the semiconductor layer, a second insulating said channel region of said semiconductor layer overlap through the layer, and a second gate electrode located on the opposite side of the first gate electrode with respect to the semiconductor layer, in the display region, the active matrix substrate, the different colors of light from each other first color filter which transmits, has a color filter layer including the second color filter and the third color filter, in the frame region, the active matrix substrate is provided on the driving TFT, the second gate electrode an insulating member covering said insulating member, the first color filter, the second color filter and said third month It is formed from at least one same dielectric film of the over filter.

In certain embodiments, the height of the insulating member is larger than half the average particle diameter of the conductive particles.

In certain embodiments, the seal portion includes a first particulate spacer for defining the distance between the opposing substrate and the active matrix substrate.

Defined in some embodiments, the sealing portion, the a second particulate spacers positioned between the insulation and the member and the counter substrate, the distance between with the insulating member and the active matrix substrate and the counter substrate comprising a second particulate spacers.

In certain embodiments, the insulating member covers the entire driving TFT.

In certain embodiments, the transition portion is provided on one side of the display area, wherein the insulating member covers substantially the entire between said transition section the display area.

In certain embodiments, the second gate electrode is connected the source electrode and electrically.

In certain embodiments, the active matrix substrate includes a contact electrode provided in the frame region, the counter substrate includes a counter electrode including a portion facing the contact electrode, wherein the transition portion includes the electrically connecting the contact electrode and the counter electrode.

In certain embodiments, the contact electrode, the first conductive layer formed using the same conductive film as the first gate electrode, and / or the second conductive formed from the same conductive film as the source electrode and the drain electrode and it is electrically connected to the layer.

In certain embodiments, the transition portion, the first formed in the insulating layer and the second insulating layer, the first conductive layer, a first opening for connecting said second conductive layer and the contact electrode electrically to each other It has a part.

In certain embodiments, the transition portion, the contact electrode and has the between the second insulating layer a third conductive layer Further, the third conductive layer, the contact electrode and the contact in said first aperture ing.

In certain embodiments, the second gate electrode is formed from the same conductive film as the third conductive layer.

In certain embodiments, the second gate electrode is formed from the same conductive film as the contact electrode.

In certain embodiments, the second gate electrode is in contact with the source electrode in the second opening portion provided in the second insulating layer.

In certain embodiments, the driving TFT, the provided on the second gate electrode, the second further has a gate electrode electrically connected to it are the additional electrode, the additional electrode, the second insulating layer wherein is the source electrode electrically connected to the second opening provided in the.

In certain embodiments, the additional electrode is formed from the same conductive film as the contact electrode.

In certain embodiments, the second gate electrode is formed from the same conductive film as the contact electrode.

In certain embodiments, the insulating member covers the additional electrode in addition to the second gate electrode.

In certain embodiments, the semiconductor layer comprises an oxide semiconductor.

In certain embodiments, the oxide semiconductor comprises In-Ga-Zn-O-based semiconductor.

In certain embodiments, the In-Ga-Zn-O-based semiconductor includes a crystalline portion.

According to an embodiment of the present invention, without increasing the number of manufacturing steps, with a narrow frame and the display device is provided with excellent reliability.

(A) along the 1 atomic-1 atomic 'line and 1Ad-1Ad' line in FIG. 2 is a cross-sectional view of the frame region 100f of the liquid crystal display device 100 shown schematically according to a first embodiment of the present invention, ( b) along the 1b-1b 'line in FIG. 3 is a cross-sectional view schematically showing a display region 100d of the liquid crystal display device 100. The frame region 100f of the liquid crystal display device 100 is a plan view schematically showing. The display area 100d of the liquid crystal display device 100 is a plan view schematically showing. (A) is a process sectional view schematically showing a manufacturing process of the frame region 100f of the liquid crystal display device 100, (b) are process cross-sectional schematically illustrating a manufacturing process of the display area 100d of the liquid crystal display device 100 it is a diagram. (A) is a process sectional view schematically showing a manufacturing process of the frame region 100f of the liquid crystal display device 100, (b) are process cross-sectional schematically illustrating a manufacturing process of the display area 100d of the liquid crystal display device 100 it is a diagram. (A) is a process sectional view schematically showing a manufacturing process of the frame region 100f of the liquid crystal display device 100, (b) are process cross-sectional schematically illustrating a manufacturing process of the display area 100d of the liquid crystal display device 100 it is a diagram. (A) is a process sectional view schematically showing a manufacturing process of the frame region 100f of the liquid crystal display device 100, (b) are process cross-sectional schematically illustrating a manufacturing process of the display area 100d of the liquid crystal display device 100 it is a diagram. (A) is a process sectional view schematically showing a manufacturing process of the frame region 100f of the liquid crystal display device 100, (b) are process cross-sectional schematically illustrating a manufacturing process of the display area 100d of the liquid crystal display device 100 it is a diagram. (A) is a process sectional view schematically showing a manufacturing process of the frame region 100f of the liquid crystal display device 100, (b) are process cross-sectional schematically illustrating a manufacturing process of the display area 100d of the liquid crystal display device 100 it is a diagram. (A) is a process sectional view schematically showing a manufacturing process of the frame region 100f of the liquid crystal display device 100, (b) are process cross-sectional schematically illustrating a manufacturing process of the display area 100d of the liquid crystal display device 100 it is a diagram. (A) along the 11 at-11 at 'line and 11Ad-11Ad' line in FIG. 12, there the frame region 100f of the liquid crystal display device 100A is a modified example of the liquid crystal display device 100 in cross-sectional view schematically showing , (b) along the 11b-11b 'line in FIG. 13 is a cross-sectional view schematically showing a display region 100d of the liquid crystal display device 100A. The frame region 100f of the liquid crystal display device 100A is a plan view schematically showing. The display area 100d of the liquid crystal display device 100A is a plan view schematically showing. (A) is a process sectional view schematically showing a manufacturing process of the frame region 100f of the liquid crystal display device 100A, (b) are process cross-sectional schematically illustrating a manufacturing process of the display area 100d of the liquid crystal display device 100A it is a diagram. (A) is a process sectional view schematically showing a manufacturing process of the frame region 100f of the liquid crystal display device 100A, (b) are process cross-sectional schematically illustrating a manufacturing process of the display area 100d of the liquid crystal display device 100A it is a diagram. (A) is a process sectional view schematically showing a manufacturing process of the frame region 100f of the liquid crystal display device 100A, (b) are process cross-sectional schematically illustrating a manufacturing process of the display area 100d of the liquid crystal display device 100A it is a diagram. The frame region 100f of the liquid crystal display device 100B as another modified example of the liquid crystal display device 100 is a cross-sectional view schematically showing. Along 18 at-18 at 'line and 18Ad-18Ad' line in FIG. 19 is a cross-sectional view schematically showing a frame region 200f of the liquid crystal display device 200 according to Embodiment 2 of the present invention. The frame region 200f of the liquid crystal display device 200 is a plan view schematically showing. (A) is a sectional view schematically showing a frame region 300f of the liquid crystal display device 300 according to a third embodiment of the present invention, (b) is a sectional view schematically showing a display region 300d of the liquid crystal display device 300 it is. The frame region 900f of the liquid crystal display device 900 of Comparative Example is a cross-sectional view schematically showing.

First, the present inventors have found, for the problem that the reliability of the liquid crystal display device is reduced, with reference to FIG. 21 will be described. Figure 21 is a cross-sectional view schematically showing a frame region 900f of the liquid crystal display device 900 of the comparative example. The display area of ​​the liquid crystal display device 900 of the comparative example, not shown. Incidentally, in FIG. 21, the embodiment with the common components of the present invention may exhibit a common reference numerals, also sometimes omitted.

As shown in FIG. 21, the liquid crystal display device 900 of the comparative example, the active matrix substrate 10, a counter substrate 30 disposed so as to face the active matrix substrate 10, between the active matrix substrate 10 and the counter substrate 30 It comprises provided with a liquid crystal layer. Comparative Example The liquid crystal display device 900 includes a plurality of pixels arranged in a matrix having a plurality of rows and a plurality of columns. The liquid crystal display device 900 of the comparative example has a display region defined by a plurality of pixels, and a frame region 900f of the periphery of the display area.

Frame region 900f has a sealing portion 60s to surround the display area, and a transition portion 60t for electrically connecting the active matrix substrate 10 and the counter substrate 30 by the conductive particles 62, and a driving circuit portion 60d having a driving TFT11A including.

Driving TFT11A includes a semiconductor layer 15A, a first gate electrode 12Ga, and the source electrode 14sA and the drain electrode 14da, a second gate electrode 16GA. The semiconductor layer 15A includes a channel region 15 CA, the source region 15sA and drain regions 15Da. The first gate electrode 12gA overlaps via the first insulating layer 2i channel region 15cA of the semiconductor layer 15A, located between the semiconductor layer 15A and the substrate 1s. The source electrode 14sA and the drain electrode 14dA are the source region 15sA and drain regions 15dA of the semiconductor layer 15A, are electrically connected. The second gate electrode 16gA overlaps via the second insulating layer 4i in the channel region 15cA of the semiconductor layer 15A, the first gate electrode 12gA positioned on the opposite side with respect to the semiconductor layer 15A. The second gate electrode 16gA may also be referred to as a back gate electrode. Driving TFT11A may also be referred to as a back gate TFT having a back gate electrode.

As shown in FIG. 21, in the liquid crystal display device 900 of the comparative example, the seal portion 60s is provided to overlap the drive circuit unit 60d. This is because, in the liquid crystal display device 900 of the comparative example, is narrowed further frame area than the conventional liquid crystal display device, the sealing portion and the driver circuit portion is provided close than the conventional liquid crystal display device According to it. For example when bonding the active matrix substrate 10 and the counter substrate 30, the sealing material forming the sealing portion 60s is also extends over the drive TFT11A.

In the conventional liquid crystal display device, the seal portion is provided separately from the driver circuit portion. Furthermore, the sealing portion and the driver circuit portion, even when adhering the active matrix substrate and the counter substrate, a sealing material to form a seal portion is provided away so as not to overlap the driving TFT. For example, in the above-mentioned liquid crystal display device of Patent Document 2 (see FIG. 3 and FIG. 4 of Patent Document 2), the seal portion does not overlap the drive circuit unit. The driving circuit unit in Patent Document 2 is referred to as a "gate circuit region" is to consist of a circuit block having a switching element.

In the liquid crystal display device 900 of the comparative example, the sealing material forming the sealing portion 60s is, by overlapping with the driving TFT11A, a counter electrode 34 in which the second gate electrode 16gA and the counter substrate 30 has the conduction by the conductive particles 62 sometimes. Thus, cause actuation drive TFT11A false, reliability of the liquid crystal display device was sometimes occur lowered.

Conductive particles 62 are contained, for example in the transition material to form a transition portion 60 t. When the seal portion 60s and metastasis 60t are provided close to each other, and transfer material to form a sealing material and the transition portion 60t which constitutes the sealing portion 60s that are in contact with each other, the conductive particles 62 and the second gate electrode 16gA and a counter electrode 34 and thus be electrically connected. In particular, both the sealing portion 60s and metastasis 60t is formed of a resin material is often provided close to each other. Both the sealant and metastatic material may contain conductive particles 62. The sealing member and the transition member may be the same resin material. Alternatively, as in the liquid crystal display device of Patent Document 2, the sealing portion and the transition portion may be formed integrally from a resin material containing conductive particles. In any case, the problem may occur.

Further, as shown in FIG. 21, even if the third insulating layer 6i is formed on the second gate electrode 16GA, that the second gate electrode 16GA and the counter electrode 34 is made conductive by the conductive particles 62 there were. The third insulating layer 6i is, for example, a dielectric layer provided to form a storage capacitance, for example, may be relatively thin, 10 nm ~ 300 nm. Be such third have second gate electrode 16gA is covered by an insulating layer 6i, the conductive particles 62 breaks through the third insulating layer 6i partially conductive particles 62 and the second gate electrode 16gA electric It may be connected.

Thus, a problem that the reliability is lowered in the liquid crystal display device 900 of the comparative example, to further narrow the frame region than the conventional liquid crystal display device, and, by using the back-gate TFT as a driving TFT, resulting is a problem.

Hereinafter, with reference to the accompanying drawings, illustrating a display device according to an embodiment of the present invention. The present invention is not limited to the embodiments illustrated in the following. In the drawings, components having substantially the same function are denoted by the same reference numerals, it may be omitted from the description.

(Embodiment 1)
With reference to FIGS. 1 to 3, illustrating a liquid crystal display device 100 according to Embodiment 1 of the present invention. 1 to 3 are a cross-sectional view and a plan view showing a liquid crystal display device 100 schematically. 1 (a) is, along a 1 atomic-1 atomic 'line and 1Ad-1Ad' line in FIG. 2 is a cross-sectional view schematically showing a frame region 100f of the liquid crystal display device 100. 1 (b) is along the 1b-1b 'line in FIG. 3 is a cross-sectional view schematically showing a display region 100d of the liquid crystal display device 100.

As shown in FIGS. 1 (a) and (b), the liquid crystal display device 100 includes an active matrix substrate 10, a counter substrate 30 disposed so as to face the active matrix substrate 10, the active matrix substrate 10 and the counter substrate and a liquid crystal layer 50 provided between the 30. The liquid crystal display device 100 includes a plurality of pixels arranged in a matrix having a plurality of rows and a plurality of columns. The liquid crystal display device 100 includes a display area 100d defined by a plurality of pixels, and a frame region 100f of the periphery of the display region 100d.

Frame region 100f has a sealing portion 60s to surround the display region 100d, and a transition portion 60t for electrically connecting the active matrix substrate 10 and the counter substrate 30 by the conductive particles 62, and a driving circuit portion 60d having a driving TFT11A including. As shown in FIG. 1, the sealing portion 60s is provided to overlap the drive circuit unit 60d.

In metastasis 60 t, the active matrix substrate 10 has a contact electrode 64 provided in the frame region 100f, the counter substrate 30 includes a counter electrode 34 including a portion facing the contact electrode 64. Metastasis 60t electrically connects the contact electrode 64 and the counter electrode 34.

The active matrix substrate 10 has a drive TFT11A provided in the frame region 100f, and a substrate for supporting the driving TFT11A (e.g. glass substrate) 1s.

Driving TFT11A includes a semiconductor layer 15A, a first gate electrode 12Ga, and the source electrode 14sA and the drain electrode 14da, a second gate electrode 16GA.

The semiconductor layer 15A includes a channel region 15 CA, the source region 15sA and drain regions 15Da. Of the semiconductor layer 15A, a region in contact with the source electrode 14sA is called the source region 15SA, a region in contact with the drain electrode 14dA is called a drain region 15Da. Of the semiconductor layer 15A, it overlaps with the first gate electrode 12Ga, and the region located between the source region 15sA and the drain region 15dA is called a channel region 15 CA.

The first gate electrode 12gA overlaps via the first insulating layer 2i channel region 15cA of the semiconductor layer 15A, located between the semiconductor layer 15A and the substrate 1s.

The source electrode 14sA and the drain electrode 14dA are the source region 15sA and drain regions 15dA of the semiconductor layer 15A, are electrically connected.

The second gate electrode 16gA overlaps via the second insulating layer 4i in the channel region 15cA of the semiconductor layer 15A, the first gate electrode 12gA positioned on the opposite side with respect to the semiconductor layer 15A. The second gate electrode 16gA, for example, are electrically connected to the source electrode 14SA. The second gate electrode 16gA may also be referred to as a back gate electrode. Driving TFT11A may also be referred to as a back gate TFT having a back gate electrode.

The active matrix substrate 10, in the frame region 100f, provided on the drive TFT11A, an insulating member 19 covering the second gate electrode 16GA. The active matrix substrate 10 is a display area 100d, has a projection structure projecting on the counter substrate 30 side. In the example shown in FIG. 1, the protrusion structure is a first columnar spacer 23a or the second columnar spacer 23b. The insulating member 19 is formed from the same dielectric film and the protrusion structure (first columnar spacers 23a and the second columnar spacer 23b).

Driving TFT11A Since a second gate electrode 16gA which functions as a back gate electrode, change in electrical characteristics of the drive TFT11A is suppressed. Thus, reduction in the reliability of the liquid crystal display device 100 is suppressed. The liquid crystal display device 100, since an insulating member 19 covering the second gate electrode 16GA, that the counter electrode 34 in which the second gate electrode 16GA and the counter substrate 30 has are electrically connected by the conductive particles 62 it is possible to prevent. Thus, the malfunction of the drive TFT11A is suppressed, the liquid crystal display device 100 having excellent reliability. Further, since it becomes possible to provide close and seal portion 60s and / or metastasis 60t and the drive TFT11A each other, it is possible to reduce the area of ​​the frame region 100f. The insulating member 19, since it is formed from the same dielectric film and the protrusion structure having an active matrix substrate 10 in the display region 100d, without increasing the number of manufacturing steps, with a narrow frame, and a liquid crystal display having excellent reliability device is obtained.

The insulating member 19 may cover the second gate electrode 16GA direct contact with the second gate electrode 16GA, may cover the second gate electrode 16GA sandwiched between another layer. The insulating member 19 and cover the second gate electrode 16GA, when viewed from the normal direction of the active matrix substrate 10, a state in which all of the second gate electrode 16GA are overlapped with the insulating member 19. For example, in the example shown in FIG. 1, the third insulating layer 6i is provided over the second gate electrode 16GA, the insulating member 19 covers the second gate electrode 16GA through the third insulating layer 6i. The insulating member 19, conductive particles 62 that prevent the break through third insulating layer 6i, the conductive particles 62 and the second gate electrode 16gA and the counter electrode 34 is prevented from being electrically connected it can. Shape and size of the insulating member 19 is not particularly limited as long to cover the second gate electrode 16GA. For example, the insulating member 19 may cover the entire drive TFT11A. That is, when viewed from the normal direction of the active matrix substrate 10, the entire drive TFT11A may overlap with the insulating member 19.

The first columnar spacer 23a is a spacer for defining the distance between the active matrix substrate 10 and the counter substrate 30. In other words, first columnar spacers 23a controls the thickness of the liquid crystal layer 50 (sometimes called a "cell gap".). Second columnar spacer 23b is lower spacer than the first columnar spacer 23a. The first columnar spacer 23a is in contact with the counter substrate 30, a second columnar spacer 23b is not in contact with the counter substrate 30. The first columnar spacer 23a is also called the "main spacer", the second columnar spacer 23b is also referred to as a "sub-spacers". Second columnar spacer 23b, for example, is formed of the same dielectric film as the first columnar spacers 23a. Second columnar spacer 23b may be formed from different dielectric film as the first columnar spacers 23a.

The second columnar spacer 23b may be omitted, if a second columnar spacer 23b in addition to the first column spacer 23a, obtained the following effects. In the conventional liquid crystal display device, the higher the arrangement density of the columnar spacers (number of columnar spacers per unit area) in order to improve the load bearing characteristics, there is a problem that low-temperature bubbling is liable to occur. In the liquid crystal display device 100, as shown in FIG. 1, since basically control the cell gap of only the first columnar spacer 23a, the effective spacer density is defined only by the first columnar spacer 23a. Therefore, easy to follow the cell gap shrinkage of the liquid crystal layer 50, it is possible to suppress the occurrence of low-temperature bubbling. Further, when the cell gap is narrowed are load is applied to the liquid crystal display device 100, the effective spacer density when both substrates in both the first columnar spacers 23a and the second columnar spacer 23b is supported (this columnar to) so defined by both spacers 23a and 23b, it can achieve high load-bearing characteristics.

The insulating member 19 is formed in the same manufacturing process as the protrusion structure (first columnar spacers 23a and the second columnar spacer 23b). The height h19 of the insulating member 19 obtains the height of the protrusion structure (the height h23b height h23a or second columnar spacer 23b of the first columnar spacer 23a) are substantially the same. For details of the manufacturing process of the liquid crystal display device 100 will be described later.

The height h19 of the insulating member 19 is not limited to the above example, the second gate electrode 16GA, the higher the degree that it is possible to prevent that it is electrically connected by the counter substrate 30 are conductively particles 62 good. The height h19 of the insulating member 19, for example, is preferably larger than half the average particle diameter of the conductive particles 62. The insulating member 19 may be in contact with the counter substrate 30 may not be in contact with the counter substrate 30.

Conductive particles 62, for example, metal particles (such as gold (Au), silver (Ag), nickel (Ni)), the resin particles plated with metal (e.g., Ni plating), carbon particles or transparent conductive particles, (e.g. it is an ITO). The particle size of the conductive particles 62 is, for example, 0.1 [mu] m ~ 10 [mu] m. Conductive particles 62, for example, are included in the transfer material to form a transition portion 60 t. Conductive particles 62 may be included in the sealant to form the seal portion 60s. Conductive particles 62 may be included in both the sealant and metastatic material. The seal portion 60s and the transition portion 60 t, may be formed integrally from the same resin material.

Sealant and metastatic material can be used, for example, the same resin material. Sealant and metastatic material, respectively, for example, a photocurable resin (including those used in combination of heat curing) is widely used. Incidentally, the sealing member and metastatic material is not limited to the ultraviolet-curable resin may be a resin that cures at other wavelengths of light (e.g., visible light), it can be preferably used various photocurable resin . Further, the photocurable resin includes a resin insert the resin to proceed the curing reaction by irradiation with light of a predetermined wavelength, it is possible to perform further heat cured after the photocuring. By a combination of thermal curing, in general physical properties of the cured product (hardness and elasticity) can be improved. Further, the seal member and metastatic member, respectively, particles for imparting scattering with light-curing resin (filler (filler)) may be mixed. Sealant and metastatic material particles are dispersed, so that scattering or diffuse reflection light, the effect of spread light is obtained a wider portion of the sealing member or metastasis material within.

Seal portion 60s may further comprise a first particulate spacers 66a which defines the distance between the active matrix substrate 10 and the counter substrate 30. First particulate spacers 66a are included in the example the sealant. First particulate spacers 66a may be included in the sealant and / or metastasis material.

As described above, the driving TFT11A Since a second gate electrode 16gA which functions as a back gate electrode, the characteristic variation of the TFT can be suppressed. As described later, the third conductive layer 16 including the second gate electrode 16gA is formed from a transparent conductive film. The second gate electrode 16gA may be formed of a metallic material, for example. A second gate electrode 16gA formed of metallic material, so also functions as a light shielding film for the channel region 15cA of the semiconductor layer 15A, it is possible to more effectively suppress the shift of the threshold voltage Vth of the driving TFT11A. The second gate electrode 16gA drive TFT11A, as illustrated in Figure 1, are electrically connected to the source electrode 14sA driving TFT11A. For example, the second gate electrode 16gA is in contact with the source electrode 14sA in the opening CH2 provided in the second insulating layer 4i. When the second gate electrode 16gA are electrically connected to the source electrode 14SA, by the potential of the second gate electrode 16gA is fixed to a predetermined value, and a shift of the threshold voltage Vth of the driving TFT11A, drive it is possible to suppress the hysteresis of TFT11A increases. Thus, characteristic variation of the driving TFT11A is suppressed, it is possible to reduce variations in characteristics of driving TFT11A.

The second gate electrode 16gA may be optionally electrode or wiring electrically connected. Electrodes or wirings connected second gate electrode 16gA electrically is the is fixed to a predetermined potential, it is possible to obtain the same effect as described above. However, the electrical connection of the second gate electrode 16gA is not limited thereto. For example, the second gate electrode 16gA may be electrically connected to the first gate electrode 12Ga. By applying a gate voltage to both the first gate electrode 12gA and the second gate electrode 16GA, it can improve the apparent mobility of the semiconductor layer 15A, the effect of the narrowing of the reduction of power consumption and / or the drive circuit section 60d it can be carried out in the manner. Further, for example, the second gate electrode 16gA may be the drain electrode 14dA electrically connected. When the second gate electrode 16gA is connected to the drain electrode 14da electrically, by the value of the voltage applied to the drain electrode 14da, you are possible to change the threshold voltage Vth of the driving TFT11A.

As described above, the insulating member 19 is formed from the same dielectric film and the protrusion structure having an active matrix substrate 10 in the display region 100d. Here, the protrusion structure illustrated columnar spacers 23a, is not limited to 23b. The active matrix substrate 10 has a display area 100d, it may be a projection structure projecting on the counter substrate 30 side. For example, the protrusion structure may be oriented control structure that defines the orientation of the liquid crystal. The insulating member 19 is not limited to the protrusion structure may be formed from the same dielectric film as the layer having the active matrix substrate 10 in the display region 100d. For example, as will be described later with reference to FIG. 20, the insulating member 19 may be formed from the same dielectric film as the color filter layer included in the active matrix substrate 10 in the display region 100d.

By insulating member 19 covers the second gate electrode 16GA, in the liquid crystal display device 100, a parasitic capacitance formed between the second gate electrode 16GA and the counter electrode 34, the liquid crystal display device 900 of Comparative Example compared to it may be reduced. Towards the insulating member 19 than the seal portion 60s is because may have a low dielectric constant. Seal portion 60s and the insulating member 19 is, for example, both are formed from an organic insulating film, typically a filler is filled in the sealing material forms a seal portion 60s. Filler is typically an insulating powder of inorganic, for example, a powder of silica. In general, since the dielectric constant of the inorganic insulating material tends to be higher than the dielectric constant of the organic insulating material, in the liquid crystal display device 100 having the insulating member 19, formed between the second gate electrode 16gA and the counter electrode 34 parasitic capacitance can be reduced.

In the liquid crystal display device 100, as described above, the active matrix substrate 10 has an insulating member 19 and the projections structures. By the active matrix substrate 10 side insulating member 19 and the projection structure is provided, further obtained the following effects.

Since the insulating member 19 covers the second gate electrode 16gA drive TFT11A, it can be effectively protected from moisture contained drive TFT11A the seal portion 60s. In particular, it is possible to prevent the moisture from entering the channel region 15cA of the semiconductor layer 15A. Further, for example, is irradiated to the sealing material in the step of curing the sealant, ultraviolet scattered by the filler contained in the sealing material can be reduced from entering the channel region 15cA of the semiconductor layer 15A. These effects since characteristic variation of the driving TFT11A and / or mis-operation can be prevented, it is possible to achieve more effectively improved reliability.

Further, the first columnar spacer 23a to define the distance between the active matrix substrate 10 and the counter substrate 30, by providing the active matrix substrate 10, it is possible to suppress the variation of the cell gap. When the first columnar spacer 23a provided on the counter substrate 30, occurs when the variation in film thickness in the manufacturing process of the active matrix substrate 10 is caused a problem that variations in the thickness of the active matrix substrate 10 from being reflected in the cell gap Obtained. In contrast, the provision of the first columnar spacer 23a on the active matrix substrate 10, in the manufacturing process of the active matrix substrate 10, the steps up to the step of providing a first columnar spacer 23a, in the case where variation occurs in the thickness even, by aligning the height h23a of the first columnar spacer 23a, it is possible to control the cell gap.

Further, the insulating member 19, when stress is applied to the liquid crystal display device 100 from the outside, by reducing the influence of the drive TFT11A, it is possible to prevent the characteristic variation and / or malfunction of the drive TFT11A. Thus, for example, the present embodiment to a display device having flexibility are preferred. Stress applied to the drive TFT11A the environment (e.g. temperature, humidity) of the display device is used can also occur by a change in the.

Hereinafter, the structure of the liquid crystal display device 100 in more detail.

The active matrix substrate 10, as shown in FIG. 1, the substrate 1s, the first conductive layer 12 including the first gate electrode 12Ga, first insulating layer 2i, the semiconductor layer 15A, the second containing a source electrode 14sA and drain electrodes 14dA conductive layer 14, second insulating layer 4i, and a third conductive layer 16 including the second gate electrode 16GA. Further, the active matrix substrate 10 further comprises a third insulating layer 6i, and the fourth conductive layer 18.

The active matrix substrate 10, as shown in FIG. 1, the display area 100d, having a pixel TFT11B. Pixel TFT11B the channel region 15CB, and the semiconductor layer 15B containing a source region 15sB and drain regions 15 dB, and the gate electrode 12gB overlapping through the first insulating layer 2i channel region 15CB of the semiconductor layer 15B, the source region of the semiconductor layer 15B respectively 15sB and drain regions 15dB and an electrical connection to the source electrode 14sB and drain electrodes 14dB was.

The first conductive layer 12 is provided on the substrate 1s. The first conductive layer 12 includes a first gate electrode 12gA drive TFT11A, the gate electrode 12gB pixels TFT11B, and a gate wiring G. The first conductive layer 12 may be a single-layer structure or a multilayer structure in which a plurality of layers are stacked. The first conductive layer 12 comprises a layer formed from at least a metallic material. When the first conductive layer 12 is a laminated structure, a portion of the layers may be formed from a metal nitride or a metal oxide.

The first insulating layer (gate insulating layer) 2i is provided on the first conductive layer 12. That is, the first insulating layer 2i, the first gate electrode 12Ga, is formed to cover the gate electrode 12gB and the gate wiring G. The first insulating layer 2i is formed of an inorganic insulating material.

Semiconductor layer 15A, 15B is provided on the first insulating layer 2i. The semiconductor layer 15A and 15B, for example, are formed from a common semiconductor film. The semiconductor layer 15A of the drive TFT11A, as described above, including the channel region 15 CA, the source region 15sA and drain regions 15Da. The semiconductor layer 15B of the pixel TFT11B includes a first portion 15ab that overlaps with the gate electrode 12 GB, and a second portion 15bB which extends across the drain electrode 14dB side edge of the gate electrode 12 GB from the first portion 15ab. The first portion 15aB includes a channel region 15CB, the source region 15sB and drain regions 15 dB.

Second conductive layer 14, the semiconductor layer 15A, is provided on 15B. Second conductive layer 14 includes a source electrode 14sA and the drain electrode 14dA drive TFT11A, a source electrode 14sB and the drain electrode 14dB pixels TFT11B, the source line S. Second conductive layer 14 may be a single-layer structure or a multilayer structure in which a plurality of layers are stacked. Second metal layer 14 comprises a layer formed from at least a metallic material. If the second conductive layer 14 has a multilayer structure, a portion of the layers may be formed from a metal nitride or a metal oxide. Comprising a layer formed from a metallic material, the first conductive layer 12 and the second conductive layer 14 is generally because higher conductivity than formed of a transparent conductive material conductive layer, is possible to narrow the width of the wiring is possible, it can contribute to the improvement of the high definition and the pixel aperture ratio.

The second insulating layer (interlayer insulating layer) 4i is provided on the second conductive layer 14. The second insulating layer 4i is formed of an inorganic insulating material.

The second insulating layer 4i, opening CH3 provided in the opening CH2 and display region 100d provided in the driver circuit portion 60d is formed. Opening CH2, when viewed from the normal direction of the active matrix substrate 10, overlapping with the source electrode 14SA. Opening CH3, when viewed from the normal direction of the active matrix substrate 10, overlapping the second portion 15bB of the semiconductor layer 15B. The opening CH3, when viewed from the normal direction of the active matrix substrate 10, the drain electrode 14 dB, even overlap the second portion 15bB side end 14De. In other words, the opening CH3 includes an end portion 14de of the drain electrode 14 dB, and a second portion 15bB of the semiconductor layer 15B is formed to expose.

The third conductive layer 16 is provided on the second insulating layer 4i. The third conductive layer 16 is formed, for example, a transparent conductive material. The third conductive layer 16 may be referred to as first transparent electrode layer 16. The third conductive layer 16 includes a second gate electrode 16gA of driving TFT11A, and a pixel electrode 16B of the pixel TFT11B. The second gate electrode 16gA is in contact with the source electrode 14sA in the opening CH2. Pixel electrodes 16B is in contact with the second portion 15bB of the semiconductor layer 15B in the opening CH3. Pixel TFT11B and the pixel electrode 16B is provided for each pixel. That is, each pixel is defined by the pixel electrode 16B.

The third insulating layer (auxiliary capacitor insulating layer) 6i covers the third conductive layer 16. The third insulating layer 6i is formed of an inorganic insulating material.

The fourth conductive layer 18 is provided on the third insulating layer 6i. The fourth conductive layer 18 is formed, for example, a transparent conductive material. The fourth conductive layer 18 may be referred to as a second transparent electrode layer 18. The fourth conductive layer 18 includes an electrode 18B that are not electrically connected to the pixel electrode 16B. The electrode 18B is, for example, serves as a common electrode. The common electrode 18B is opposed to the pixel electrode 16B via a third insulating layer 6i, and the pixel electrode 16B and the common electrode 18B, and the third insulating layer 6i located between these constitutes an auxiliary capacitance there. The common electrode 18B, for example, at least one slit (not shown) is formed. On the common electrode 18B, an alignment film (not shown) is provided. The active matrix substrate 10 having the structure described above is suitable for use in the FFS (Fringe Field Switching) mode liquid crystal display device 100 of.

In the pixel TFT11B 1, opening CH3, when viewed from the normal direction of the substrate 1s, the drain electrode 14 dB, overlaps the second portion 15bB of the second portion 15bB side end 14de and the semiconductor layer 15B. Therefore, the part of the opening CH3, can be a light transmitting region also not blocked by any of the gate electrode 12gB and the drain electrode 14 dB. Note that the second insulating layer (interlayer insulating layer) 4i is because it is formed of an inorganic insulating material, that is, does not include an organic insulating layer, the openings CH3 is relatively shallow. Therefore, the disorder of liquid crystal alignment due to the opening CH3 small and light leakage at the opening CH3 vicinity is small, no adverse effect on the display be provided the light transmission region described above. Thus, by utilizing a part of the opening CH3 as the light transmission region, it is possible to increase the utilization efficiency of light.

The structure of the drive TFT11A and pixel TFT11B of the present embodiment is not limited to those exemplified. For example, the back gate electrode (second gate electrode) 16GA may be formed from the same conductive film as the fourth conductive layer 18. Referring to FIGS. 11 to 17 will be described later modifications. The driving TFT11A may have a structure of a variety of known back gate TFT, the pixel TFT11B may have the structure of various known of the TFT.

Drive TFT11A and pixel TFT11B of this embodiment, respectively, is not limited to the illustrated channel-etched of the TFT. Drive TFT11A and pixel TFT11B, respectively, it may be a etch stop type of a TFT. The "channel etch TFT", has not been the etch stop layer is formed on the channel region, the ends of the channel side of the source and drain electrodes are arranged in contact with the upper surface of the semiconductor layer. Channel etch TFT, for example a conductive film for the source and drain electrode on the semiconductor layer, is formed by performing a source-drain separation. In the source-drain separation step, there are cases where the surface portion of the channel region is etched. On the other hand, the TFT of the etch stop layer is formed on the channel region (etch stop type TFT), an end portion of the channel side of the source and drain electrodes are located, for example, the etch stop layer. Etch stop type TFT, for example after the formation of the etch stop layer covering the portion to be the channel region of the semiconductor layer, forming a conductive film for the source and drain electrodes on the semiconductor layer and the etch stop layer, source and drain It is formed by the separation.

The counter substrate 30, as shown in FIG. 1, for example, a substrate (e.g. glass substrate) 31, color filter layer 32 formed on the substrate 31 (including a color filter and black matrix), a color filter layer 32 having an overcoat layer 33 which covers and a counter electrode 34 provided on the overcoat layer 33. In the frame region 100f, the color filter layer 32 may not include a color filter. In Figure 1, the counter electrode 34 are omitted in the display region 100d, the counter substrate 30 includes a counter electrode 34 in the example display region 100d and the frame region 100f.

In the liquid crystal display device 100 of VA mode, the counter electrode 34 may function as a common electrode. In the case of applying the liquid crystal display device 100 of the FFS mode on the touch panel, it is possible to use counter electrode 34 as a sensing electrode or drive electrode of the touch panel. The liquid crystal display device 100 of VA mode in a case of applying the touch panel, the counter electrode 34 that serves as a common electrode, can serve as a sensing electrode or drive electrode of the touch panel.

Metastasis 60t of the liquid crystal display device 100, as described above, electrically connecting the contact electrode 64 and the counter electrode 34 by the conductive particles 62. As shown in FIG. 1, the transition portion 60 t, the active matrix substrate 10 has a contact electrode 64. Further, the transition portion 60 t, the active matrix substrate 10 includes a first conductive layer 12, and the second conductive layer 14 has further a third conductive layer 16, the contact electrode 64 is the same conductivity as the fourth conductive layer 18 It is formed from the membrane. Transition portion further has an opening CH1 provided in the first insulating layer 2i and the second insulating layer 4i. Opening CH1, the first conductive layer 12, second conductive layer 14 are electrically connected to each other a third conductive layer 16 and the contact electrode 64. The third conductive layer 16 is in contact with the contact electrode 64 in the opening CH1.

Structure of metastasis 60t is not limited to the example shown in FIG. For example, contact electrode 64, the first conductive layer 12, second conductive layer 14 may be formed from the same conductive film as one of the third conductive layer 16, and the fourth conductive layer 18. Or, the contact electrodes 64, may be connected first conductive layer 12 and / or the second conductive layer 14 electrically. In metastasis 60 t, the active matrix substrate 10 may if it has a contact electrode 64 which is connected to the counter substrate 30 and electrically through the conductive particles 62, the conductive layer which does not contain the contact electrodes 64 (in FIG. 1 case in the first conductive layer 12 may not have a second conductive layer 14 and third conductive layer 16). Contact portions for electrically connecting the contact electrode 64 and the other conductive layer (openings) may be provided in the transition portion 60t, in the frame region 100f, provided in a region other than the transition portion 60t it may be.

Subsequently, with reference to FIGS. 4-10, a method for manufacturing a liquid crystal display device 100. 4 to 10, respectively, are process sectional views schematically showing the manufacturing process of the liquid crystal display device 100. In FIGS. 4 to 10, (a) shows a process of manufacturing the frame region 100f, shows (b) showing the step of manufacturing a display area 100d.

First, as shown in FIG. 4, the substrate (e.g. glass substrate) on 1s, the first gate electrode 12gA drive TFT11A and pixel TFT11B, forming a first conductive layer 12 comprising a 12 GB. Specifically, after depositing the first conductive film on the substrate 11, forming a first conductive layer 12 by patterning the first conductive film. As a material of the first conductive film, for example, aluminum (Al), chromium (Cr), copper (Cu), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), or their it is possible to use the alloy. The first conductive film may be a single-layer structure or a multilayer structure in which a plurality of layers are stacked. For example, it is possible to use a laminate of the laminate or Mo / Al / Mo in the Ti / Al / Ti (upper layer / intermediate layer / lower layer). The stacked structure of the first conductive film is not limited to the three-layer structure, it may be a two-layer structure and four or more layers of the laminated structure. Further, the first conductive film is formed from at least if it contains a layer formed from a metallic material well, when the first conductive film is a multilayer structure, part of the layer is a metal nitride or a metal oxide it may be. Here, a TaN layer having a thickness of 5 nm ~ 100 nm, and a W layer having a thickness of 50 nm ~ 500 nm, for example, after forming the first conductive film by depositing in succession by sputtering, the by patterning the first conductive film by a photolithography process to form the first conductive layer 12.

Next, a first insulating layer (gate insulating layer) 2i on the first conductive layer 12. The first insulating layer 2i, for example, silicon (SiO 2) film dioxide, silicon nitride (SiN x) film, silicon oxynitride (SiO x N y (x> y)) film, a silicon nitride oxide (SiN x O y ( x> y)) film, an aluminum oxide film or a tantalum oxide film or a laminated film thereof. Here, the the SiN x film having a thickness of 100 nm ~ 500 nm, by depositing in succession by SiO 2 film and an example CVD having a thickness of 20nm ~ 100nm (Chemical Vapor Deposition) , the first insulating layer 2i to form.

Subsequently, as shown in FIG. 5, on the first insulating layer 2i, a semiconductor layer 15A, 15B of the drive TFT11A and pixel TFT11B. Specifically, after depositing the semiconductor film on the first insulating layer 2i, formed island-like semiconductor layer 15A, and 15B by patterning the semiconductor film. Here, after the deposition of In-Ga-Zn-O based semiconductor film having a thickness of 20 nm ~ 200 nm, to form a semiconductor layer 15A, and 15B by patterning the semiconductor film in a photolithography process.

Semiconductor layer 15A, 15B is, for example, an oxide semiconductor layer. Oxide contained semiconductor layer 15A, and 15B semiconductor may be an amorphous oxide semiconductor may be a crystalline oxide semiconductor having a crystalline portion. The crystalline oxide semiconductor, a polycrystalline oxide semiconductor, a microcrystalline oxide semiconductor, c-axis like crystalline oxide semiconductor to which a generally vertically oriented to the layer surface.

Semiconductor layer 15A, 15B may have a double- or more layered structure. When the semiconductor layer 15A, 15B has a laminated structure, the semiconductor layer 15A, 15B may include a amorphous oxide semiconductor layer and the crystalline oxide semiconductor layer. Or it may include a plurality of crystalline oxide semiconductor layers having different crystal structures. When the semiconductor layer 15A, 15B has a two-layer structure including an upper layer and lower layer, the energy gap of the oxide semiconductor included in the upper layer is preferably larger than the energy gap of the oxide semiconductor included in the lower layer. However, if the difference between the energy gap of these layers is relatively small, the energy gap of the oxide semiconductor of the lower layer may be larger than the energy gap of the oxide semiconductor layer.

Amorphous oxide semiconductor and above the crystalline oxide semiconductor materials, structures, deposition method, etc. structure of the oxide semiconductor layer having a stacked structure, are described in, for example, JP 2014-007399 . For reference, it incorporated all of the disclosure of JP 2014-007399 herein.

Semiconductor layer 15A, 15B is, for example, In, may include at least one metal element selected from Ga and Zn. In the present embodiment, the semiconductor layer 15A, 15B includes, for example, an In-Ga-Zn-O-based semiconductor. Here, In-Ga-Zn-O-based semiconductor is, an In (indium), Ga (gallium), Zn ratio of a ternary oxide (zinc), an In, Ga and Zn (composition ratio) It is not particularly restricted but, for example, in: Ga: Zn = 2: 2: 1, in: Ga: Zn = 1: 1: 1, in: Ga: Zn = 1: 1: containing 2 or the like. Such semiconductor layers 15A, 15B may be formed from an oxide semiconductor film containing In-Ga-Zn-O-based semiconductor. Incidentally, a channel etch type TFT having an active layer comprising an In-Ga-Zn-O-based semiconductor, is sometimes referred to as "CE-InGaZnO-TFT".

In-Ga-Zn-O-based semiconductor may be amorphous or may be crystalline. The semiconductor crystalline In-Ga-Zn-O-based semiconductor of the c-axis crystalline In-Ga-Zn-O system and generally perpendicular orientation to the layer surface is preferred.

The crystal structure of the crystalline In-Ga-Zn-O-based semiconductor is, for example, disclosed above JP 2014-007399, JP 2012-134475, JP-like in JP-A-2014-209727 ing. For reference, it incorporated all of the disclosure of JP 2014-209727 and JP 2012-134475 JP herein. In-Ga-Zn-O-based TFT having a semiconductor layer, since they have high mobility (a-SiTFT 20 fold compared to) and low leakage current (less than one-hundredth as compared to a-SiTFT) , it is preferably used as the driving TFT and the pixel TFT.

Semiconductor layer 15A, 15B, instead of the In-Ga-Zn-O-based semiconductor may contain other oxide semiconductor. For example In-Sn-Zn-O-based semiconductor (for example In 2 O 3 -SnO 2 -ZnO) it may contain. In-Sn-Zn-O-based semiconductor, an In (indium) is a ternary oxide of Sn (tin) and Zn (zinc). Alternatively, the semiconductor layer 15A, 15B is, In-Al-Zn-O-based semiconductor, In-Al-Sn-Zn-O-based semiconductor, Zn-O-based semiconductor, an In-Zn-O-based semiconductor, Zn-Ti-O system semiconductor, Cd-Ge-O based semiconductor, Cd-Pb-O based semiconductor, CdO (cadmium oxide), Mg-Zn-O-based semiconductor, In-Ga-Sn-O-based semiconductor, In-Ga-O-based semiconductor , Zr-in-Zn-O-based semiconductor may contain such Hf-in-Zn-O-based semiconductor.

Next, the first insulating layer 2i of the frame region 100f, to form an opening 2a for electrically connecting the first conductive layer 12 and the second conductive layer 14. Specifically, as the first conductive layer 12 is exposed, patterning the first insulating layer 2i.

Next, as shown in FIG. 6, the semiconductor layer 15A, on the 15B, the source electrode 14sA and the drain electrode 14dA of driving TFT11A, the source electrode 14sB and the drain electrode 14dB pixel TFT11B, and the second conductive layer including a source line S 14 to the formation. Specifically, the semiconductor layer 15A, after forming a second conductive film on the 15B, a second conductive layer 14 by patterning the second conductive film. The material of the second conductive film, for example, aluminum (Al), chromium (Cr), copper (Cu), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), or they it can be used in the alloy. The second conductive film may be a single-layer structure or a multilayer structure in which a plurality of layers are stacked. For example, it is possible to use a laminate of the laminate or Mo / Al / Mo in the Ti / Al / Ti (upper layer / intermediate layer / lower layer). The stacked structure of the second conductive film is not limited to the three-layer structure, it may be a two-layer structure and four or more layers of the laminated structure. Further, the second conductive film is formed from at least need only contain a layer formed from a metallic material, when the second conductive film is a laminated structure, the portion of the layer a metal nitride or a metal oxide it may be. Here, Ti layer having a thickness of 10 nm ~ 100 nm, Al layer having a thickness of 50 nm ~ 400 nm, and, second by depositing in succession by the Ti layer, for example, a sputtering method with a thickness of 50 nm ~ 300 nm after forming the second conductive film, forming a second conductive layer 14 by patterning the second conductive film in a photolithography process.

Subsequently, as shown in FIG. 7, on the second conductive layer 14, a second insulating layer 4i. Further, the second insulating layer 4i, the region corresponding to the opening 2a of the first insulating layer 2i, the openings 4a are formed by patterning. That is, as the second conductive layer 14 is exposed, a portion of the second insulating layer 4i is removed. Further, the second insulating layer 4i in the driver circuit portion 60d, opening CH2 for electrically connecting the source electrode 14sA a second gate electrode 16gA drive TFT11A is formed. Furthermore, the second insulating layer 4i display region 100d, the opening CH3 is formed by patterning. Opening CH3, as part of a portion and the semiconductor layer 15B of the drain electrode 14dB pixel TFT11B is exposed, by a portion of the second insulating layer 4i is removed, it is formed. The second insulating layer 4i, for example, silicon (SiO 2) film dioxide, silicon nitride (SiN x) film, silicon oxynitride (SiO x N y (x> y)) film, a silicon nitride oxide (SiN x O y ( x> y)) film, an aluminum oxide film or a tantalum oxide film, or a laminated film of these. Here, after depositing an SiO 2 film having a thickness of 50 nm ~ 500 nm, relative to the SiO 2 film, 200 ° C.-400 ° C. in an air atmosphere, a heat treatment of 0.5 hour to 4 hours, then, 50 nm It deposited the SiN x film having a thickness of ~ 500 nm, the laminated film thereof and the second insulating layer 4i.

Next, as shown in FIG. 8, on the second insulating layer 4i, forming a third conductive layer (first transparent electrode layer) 16 including the pixel electrode 16B of the second gate electrode 16gA and pixel TFT11B driving TFT11A . Specifically, after depositing a third conductive film on the second insulating layer 4i, forming the third conductive layer 16 by patterning the third conductive film. At this time, in the opening 4a, the third conductive layer 16 is patterned is made in contact with the second conductive layer 14. In the opening CH2, the second gate electrode 16gA drive TFT11A patterning is performed so as to be in contact with the source electrode 14SA. Furthermore, in the opening CH3, patterning is performed so that the pixel electrode 16B of the pixel TFT11B is in contact with the second portion 15bB of the drain electrode 14dB and the semiconductor layer 15B. The material of the third conductive film, it is possible to use various transparent conductive materials, for example, may be used ITO, IZO, a metal oxide such as ZnO. Here, after forming a third conductive film by depositing a metal oxide film, for example, a sputtering method with a thickness of 20 nm ~ 300 nm, the third by patterning the third conductive film in a photolithography process forming a conductive layer 16.

Subsequently, as shown in FIG. 9, on the third conductive layer 16, the third insulating layer (auxiliary capacitor insulating layer) is formed 6i. Of the third insulating layer 6i, the region corresponding to the opening 4a of the second insulating layer 4i, the opening 6a is formed by patterning. That is, as the third conductive layer 16 is exposed, a portion of the third insulating layer 6i is removed. The third insulating layer 6i, for example, silicon (SiO 2) film dioxide, silicon nitride (SiN x) film, silicon oxynitride (SiO x N y (x> y)) film, a silicon nitride oxide (SiN x O y ( x> y)) film, an aluminum oxide film or a tantalum oxide film, or a laminated film of these. Here, as the third insulating layer 6i, depositing a the SiN x film, for example, by CVD with a thickness of 50 nm ~ 500 nm.

Thereafter, as shown in FIG. 10, the third insulating layer 6i, fourth conductive layer including a common electrode (transparent electrode) 18B of the contact electrode 64 and the pixel TFT11B (second transparent electrode layer) 18 is formed. Specifically, after depositing a fourth conductive layer on the third insulating layer 6i, to form the fourth conductive layer 18 by patterning the fourth conductive film. At this time, in the opening 6a, the contact electrode 64 is patterned is made in contact with the third conductive layer 16. Opening 2a, 4a, and (see FIG. 1) opening CH1 by 6a is formed. As a material of the fourth conductive film, it is possible to use various transparent conductive materials, for example, may be used ITO, IZO, a metal oxide such as ZnO. Here, after forming the fourth conductive film by depositing a metal oxide film, for example, a sputtering method with a thickness of 20 nm ~ 300 nm, the by patterning the fourth conductive film in a photolithography process 4 forming a conductive layer 18.

Then, on the fourth conductive layer 18 to form the first columnar spacer 23a, a second columnar spacer 23b and the insulating member 19. Specifically, after depositing a dielectric film on the fourth conductive layer 18, to form the columnar spacers 23a, 23b and the insulating member 19 by patterning the dielectric film. As material for the dielectric film, for example, it can be negative-working or positive-working photosensitive resin. Further, by performing an exposure process using a multi-tone mask, without increasing the number of manufacturing steps and the number of photomasks, the common dielectric film, the first columnar spacers 23a and the second columnar spacers having different heights it is possible to form the 23b. At this time, the height h19 of the insulating member 19, by the same as any of the high h23b height h23a or second columnar spacer 23b of the first columnar spacers 23a, without increasing the number of manufacturing steps and the number of photomasks it can also be formed insulating member 19 from the common dielectric film. The multi-tone mask can be a gray-tone mask or a half tone mask. The gray-tone mask, the resolution following the slit exposure device is formed, an intermediate exposure is achieved by blocking a part of light by the slit. On the other hand, in the half-tone mask, the intermediate exposure by using a semi-permeable membrane is achieved. Here, as the dielectric film, a negative type heat-transparent photosensitive resist (JSR Corp. heat transparent light-sensitive protective layer Optomer NN700G (OPTOMER is a registered trademark)) is used. Here, after depositing a dielectric film, by performing exposure and development through a gray-tone mask, the first columnar spacer 23a having a height of 1 [mu] m ~ 10 [mu] m, a height of 0.1 [mu] m ~ 9.9 second columnar spacer 23b, and an insulating member 19 having the same height as the second columnar spacers 23b are formed to have.

The active matrix substrate 10 formed in this manner, to form an alignment film (not shown) on the surface of the counter substrate 30 which is separately prepared. The counter substrate 30, for example, can be produced by various known methods. Thereafter, a sealing material comprising a first particulate spacers 66a, the active matrix substrate 10 or the counter substrate 30, is applied so as to surround the area corresponding to the display region 100d. The transition material containing conductive particles 62, is applied along the contact electrode 64. Applying the sealant and metastatic material is carried out, for example, by a dispenser method or screen printing method. The sealing material and the substrate imparted with transition material, by dropping a liquid crystal material by dropping method, to form a liquid crystal layer 50. Then, attaching the active matrix substrate 10 and the counter substrate 30 in a vacuum. Thereafter, cured by the sealant and metastatic materials such as ultraviolet radiation, to form a seal portion 60s and metastasis 60 t. Ultraviolet, for example, irradiated from the active matrix substrate 10 side.

Through the above steps, it is possible to manufacture the liquid crystal display device 100.

Next, explaining a modified example of the liquid crystal display device in this embodiment.

11-13, showing a liquid crystal display device 100A is a modified example of the liquid crystal display device 100. 11 to 13 are a sectional view and a plan view showing a liquid crystal display device 100A schematically. 11 (a) is, along the 11 at-11 at 'line and 11Ad-11Ad' line in FIG. 12 is a cross-sectional view schematically showing a frame region 100f of the liquid crystal display device 100A. FIG. 11 (b), along 11b-11b 'line in FIG. 13, the display area 100d of the liquid crystal display device 100A is a cross-sectional view schematically showing.

In the liquid crystal display device 100, as shown in FIG. 1, the second gate electrode 16gA is in contact with the source electrode 14sA in the opening CH2 provided in the second insulating layer 4i. In contrast, in the liquid crystal display devices 100A, as shown in FIG. 11, the driving TFT11A is provided on the second gate electrode 16GA, further have the additional electrode 18A that is electrically connected to the second gate electrode 16GA and, additional electrode 18A is connected to the source electrode 14sA electrically with the second inner opening CH2 provided in the second insulating layer 4i. Second opening CH2 is also provided on the third insulating layer 6i. Additional electrode 18A is formed from the same conductive film as the fourth conductive layer 18. Additional electrode 18A may be formed from the same conductive film as the contact electrode 64. The insulating member 19 covers the additional electrode 18A in addition to the second gate electrode 16GA. The insulating member 19 and cover the second gate electrode 16gA and additional electrodes 18A, when viewed from the normal direction of the active matrix substrate 10, all the second gate electrode 16gA and additional electrode 18A is overlapped with the insulating member 19 It refers to a state in which there.

In the liquid crystal display device 100A having such a configuration, it is possible to obtain the same effect as the liquid crystal display device 100. Driving TFT11A Since a second gate electrode 16gA which functions as a back gate electrode, change in electrical characteristics of the drive TFT11A is suppressed. Thus, reduction in the reliability of the liquid crystal display device 100A can be suppressed. The liquid crystal display device 100A, since it has an insulating member 19 covering the second gate electrode 16gA and additional electrodes 18A, and the counter electrode 34 in which the second gate electrode 16gA and / or additional electrode 18A and the counter substrate 30 has the conductive particles it can be prevented from being electrically connected by 62. Thus, the malfunction of the drive TFT11A is suppressed, the liquid crystal display device 100A has an excellent reliability. Further, since it becomes possible to provide close and seal portion 60s and / or metastasis 60t and the drive TFT11A each other, it is possible to reduce the area of ​​the frame region 100f. The insulating member 19, since it is formed from the same dielectric film and the protrusion structure having an active matrix substrate 10 in the display region 100d, without increasing the number of manufacturing steps, with a narrow frame, and a liquid crystal display having excellent reliability device is obtained.

In the liquid crystal display device 100, as shown in FIG. 1, on the second gate electrode 16GA, the third insulating layer 6i is formed. In contrast, in the liquid crystal display devices 100A, as shown in FIG. 11, the additional electrode 18A that is electrically connected to the second gate electrode 16gA is covered with an insulating film or a dielectric film other than the insulating member 19 not. Thus, the liquid crystal display device 100A includes a no insulating member 19, tends to occur a problem that is electrically connected to the second gate electrode 16gA and the counter electrode 34 are conductively particles 62. In other words, the liquid crystal display device 100A, by an insulating member 19, it is possible to more effectively improve the reliability.

Further, the liquid crystal display device 100A can be produced by the number of masks less than the liquid crystal display device 100.

Manufacturing process of the liquid crystal display device 100A, the manufacturing process of the liquid crystal display device 100, different in the following points. Manufacturing process of the second insulating layer 4i of the liquid crystal display device 100, as described with reference to FIG. 7, after depositing an insulating film, the opening in the insulating film (opening 4a, the openings CH2 and opening CH3 ) is a step of forming by patterning. After that, a third conductive layer 16. In the liquid crystal display devices 100A, after depositing an insulating film to form a second insulating layer 4i, without providing an opening in the insulating film, to manufacture process of the third conductive layer 16 (see FIG. 14). Then, the third insulating layer 6i of the manufacturing process (see FIG. 15), by removing a portion of the part and the third insulating layer 6i of the second insulating layer 4i, the second insulating layer 4i and the third insulating layer forming an opening in 6i. Thus, the liquid crystal display device 100A can be produced by the number of masks less than the liquid crystal display device 100. It will be described in detail below.

Referring to FIGS. 14 to 16, a manufacturing process of a liquid crystal display device 100A. The description will focus on the differences from the manufacturing process of the liquid crystal display device 100. 14 to 16, respectively, are process sectional views schematically showing the manufacturing process of the liquid crystal display device 100A. In FIGS. 14 to 16, (a) shows a process of manufacturing the frame region 100f, shows (b) showing the step of manufacturing a display area 100d.

As shown in FIG. 14, after forming the second insulating layer 4i, on the second insulating layer 4i, the third conductive layer (first transparent electrode including the electrode 16B of the second gate electrode 16gA and pixel TFT11B driving TFT11A forming a layer) 16. Electrode 16B of the pixel TFT11B may function as a common electrode.

Subsequently, as shown in FIG. 15, on the third conductive layer 16, the third insulating layer (auxiliary capacitor insulating layer) is formed 6i. Of the third insulating layer 6i, the region corresponding to the opening 2a of the first insulating layer 2i, the openings 4a and 6a are formed by patterning. That is, as the second conductive layer 14 is exposed, a portion of the 6i second insulating layer 4i and the third insulating layer are removed. Opening 2a, 4a, and (see Figure 11) opening CH1 by 6a is formed. Further, the second insulating layer 4i and the third insulating layer 6i of the driving circuit portion 60d, the opening portion 4b and 6b are formed by patterning. Opening 4b and 6b, as a part of the portion and the second gate electrode 16gA source electrode 14sA drive TFT11A is exposed, a portion of the 6i second insulating layer 4i and the third insulating layer are removed the formed. Opening CH2 (see FIG. 11) is formed by the opening 4b and 6b. Furthermore, the second insulating layer 4i and the third insulating layer 6i display region 100d, the opening 4c and 6c are formed by patterning. Openings 4c and 6c, as part of a portion and the semiconductor layer 15B of the drain electrode 14dB pixel TFT11B is exposed, by a portion of the second insulating layer 4i and the third insulating layer 6i is removed, It is formed. Opening CH3 (see FIG. 11) is formed by the openings 4c and 6c.

Next, as shown in FIG. 16, the third insulating layer 6i, fourth conductive layer (second transparent electrode layer) including the pixel electrode 18B of the contact electrode 64 and the pixel TFT11B 18 to the formation. Specifically, after depositing a fourth conductive layer on the third insulating layer 6i, to form the fourth conductive layer 18 by patterning the fourth conductive film. At this time, in the opening CH1, contact electrode 64 is patterned is made in contact with the second conductive layer 14. Further, in the opening CH2, additional electrode 18A patterning is performed so as to be in contact with the second gate electrode 16gA and the source electrode 14SA. Furthermore, in the opening CH3, pixel electrodes 18B patterning is performed so as to be in contact with the second portion 15bB and the drain electrode 14dB semiconductor layer 15B.

In the liquid crystal display device 100, as described above with reference to FIGS. 1 to 3, a pixel electrode 16B of the pixel TFT11B is formed from the third conductive layer 16, the common electrode 18B is formed from a fourth conductive layer 18 . In contrast, in the pixel TFT11B of the liquid crystal display device 100A shown in FIGS. 11 to 13, the common electrode 16B is formed from the third conductive layer 16, the pixel electrode 18B is formed from a fourth conductive layer 18.

Then, in a step similar to the liquid crystal display device 100, on the fourth conductive layer 18, by forming the columnar spacers 23a, 23b and the insulating member 19, the active matrix substrate 10 of the liquid crystal display device 100A is manufactured.

Figure 17 shows a liquid crystal display device 100B as another modified example of the liquid crystal display device 100. Figure 17 is a cross-sectional view schematically showing a frame region 100f of the liquid crystal display device 100B. Hereinafter, a liquid crystal display device 100B will be described focusing on differences from the liquid crystal display device 100A.

As shown in FIG. 17, in the driving TFT11A of the liquid crystal display device 100B, the second gate electrode 18gA is formed from the same conductive film as the fourth conductive layer 18. The second gate electrode 18gA may be formed from the same conductive film as the contact electrode 64. The second gate electrode 18gA is a second insulating layer 4i and the third inner opening CH2 provided in the insulating layer 6i, is in contact with the source electrode 14SA.

In the liquid crystal display device 100B having such a configuration, it is possible to obtain the same effect as the liquid crystal display device 100A.

In the liquid crystal display device 100A and the liquid crystal display device 100B described above, the contact electrode 64 is formed using the same conductive film and the fourth conductive layer 18. Contact electrode 64, for example may be formed from the same conductive film as the third conductive layer 16.

(Embodiment 2)
18 and 19 show a liquid crystal display device 200 according to Embodiment 2 of the present invention. 18 and 19 are a sectional view and a plan view illustrating a frame region 200f of the liquid crystal display device 200 schematically. Figure 18 is along the 18 at-18 at 'line and 18Ad-18Ad' line in FIG. 19 is a cross-sectional view schematically showing a frame region 200f of the liquid crystal display device 200. Hereinafter, a description is mainly given of different points from the liquid crystal display device 100 of Embodiment 1.

As shown in FIGS. 18 and 19, the liquid crystal display device 200, the size of the insulating member 19 different from the liquid crystal display device 100 of Embodiment 1. For example, the transition portion 60t is provided on one side of the display region 200d, the insulating member 19 covers substantially the entire between the transition portion 60t and the display region 200d. For example, when the display region 200d is substantially rectangular, metastasis 60t is provided on one side of the display region 200d, the insulating member 19 covers substantially the entire between the transition portion 60t and the display region 200d. The insulating member 19, for example, may be provided so as to expose at least the contact electrode 64.

In the liquid crystal display device 200 having such a configuration, it is possible to obtain the same effect as the liquid crystal display device 100. Driving TFT11A Since a second gate electrode 16gA which functions as a back gate electrode, change in electrical characteristics of the drive TFT11A is suppressed. Thus, reduction in the reliability of the liquid crystal display device 200 is suppressed. The liquid crystal display device 200, since an insulating member 19 covering the second gate electrode 16GA, that the counter electrode 34 in which the second gate electrode 16GA and the counter substrate 30 has are electrically connected by the conductive particles 62 it is possible to prevent. Thus, the malfunction of the drive TFT11A is suppressed, the liquid crystal display device 200 has an excellent reliability. Further, since it becomes possible to provide close and seal portion 60s and / or metastasis 60t and the drive TFT11A each other, it is possible to reduce the area of ​​the frame region 200f. The insulating member 19, since it is formed from the same dielectric film and the protrusion structure having an active matrix substrate 10 in the display region 200d, without increasing the number of manufacturing steps, with a narrow frame, and a liquid crystal display having excellent reliability device is obtained.

The liquid crystal display device 200, since an insulating member 19 is larger than the liquid crystal display device 100 can be more effectively protected from moisture contained drive TFT11A (particularly the channel region 15cA of the semiconductor layer 15A) to the sealing portion 60s . Further, for example, in the step of curing the sealing material is irradiated to the sealing material, ultraviolet scattered by the filler contained in the sealing material can be reduced from entering the channel region 15cA of the semiconductor layer 15A effectively . It is possible to effectively prevent the characteristic variation and / or malfunction of the drive TFT11A, it becomes possible to achieve more effectively improved reliability.

The liquid crystal display device 200, since an insulating member 19 is larger than the liquid crystal display device 100, maintaining easy (easy control) constant the distance between the active matrix substrate 10 and the counter substrate 30. As shown in FIG. 18, the sealing portion 60s of the liquid crystal display device 200, a second particulate spacers 66b located between the insulating member 19 and the counter substrate 30, counter substrate and the active matrix substrate 10 with an insulating member 19 it may include a second particulate spacers 66b which defines the distance between the 30. The second particulate spacers 66b are contained in the sealant to form the seal portion 60s. The second particulate spacers 66b may also be included in the transition material to form a transition portion 60 t.

In the liquid crystal display device 200, the structure of the drive TFT11A, pixel TFT11B, and metastasis 60t is the same as the liquid crystal display device 100 of Embodiment 1. This embodiment is not limited thereto, the structure of the drive TFT11A, pixel TFT11B, and metastasis 60t may be the same as the variation of the liquid crystal display device 100 (including a liquid crystal display device 100A and 100B).

(Embodiment 3)
Figure 20 shows a liquid crystal display device 300 according to a third embodiment of the present invention. Figure 20 is a cross-sectional view schematically showing a frame region 300f and a display area 300d of the liquid crystal display device 300. Hereinafter, a description is mainly given of different points from the liquid crystal display device 100 of Embodiment 1.

In the liquid crystal display device 300, in the display region 300d, the active matrix substrate 10 has a color filter layer 22. That is, the color filter-on-array structure is employed. The color filter layer 22 includes different colors three kinds of color filters for transmitting light of: a first color filter 22a, a second color filter 22b, and the third color filter (not shown) to each other. 3 kinds of color filters, for example, a blue color filter transmitting a red color filter transmitting a red light, a green color filter which transmits green light, and blue light. The insulating member 19, the first color filter 22a, is formed from at least one same dielectric film of the second color filter 22b, and the third color filter. The color filter layer 22 may further include a black matrix BM.

In the liquid crystal display device 300 having such a configuration, it is possible to obtain the same effect as the liquid crystal display device 100. Driving TFT11A Since a second gate electrode 16gA which functions as a back gate electrode, change in electrical characteristics of the drive TFT11A is suppressed. Thus, reduction in the reliability of the liquid crystal display device 300 is suppressed. The liquid crystal display device 300, since an insulating member 19 covering the second gate electrode 16GA, that the counter electrode 34 in which the second gate electrode 16GA and the counter substrate 30 has are electrically connected by the conductive particles 62 it is possible to prevent. Thus, the malfunction of the drive TFT11A is suppressed, the liquid crystal display device 300 having excellent reliability. Further, since it becomes possible to provide close and seal portion 60s and / or metastasis 60t and the drive TFT11A each other, it is possible to reduce the area of ​​the frame region 300f. The insulating member 19, since it is formed from the same dielectric film as the color filter layer 22 having the active matrix substrate 10 in the display region 300d, without increasing the number of manufacturing steps, with a narrow frame and a liquid crystal having excellent reliability display device can be obtained.

Further, the liquid crystal display device 300 may have a higher aperture ratio than a liquid crystal display device 100. In the liquid crystal display device 100, since the counter substrate 30 has a color filter layer 32, in consideration of misalignment between the active matrix substrate 10 and the counter substrate 30, which may be set to spread the black matrix. In contrast, in the liquid crystal display device 300, since the active matrix substrate 10 has a color filter layer 22, it is not necessary to consider the misalignment. It is possible to narrow the width of the black matrix is ​​improved correspondingly aperture ratio.

It will be described the manufacturing process of the liquid crystal display device 300. The following description focuses on differences from the manufacturing process of the liquid crystal display device 100.

Figure 4 has been described with reference to to 8, in the same manner as the manufacturing process of the liquid crystal display device 100, a third conductive layer 16.

Thereafter, a color filter layer 22 on the third conductive layer 16. Specifically, first, a black matrix BM is formed on the third conductive layer 16, then, the red color filter 22a, by sequentially forming a blue color filter 22b and the green color filter, (not shown), a color filter to form a layer 22. The material of the black matrix BM, for example, can be used a photosensitive black resin material. Red color filter 22a, as the material of the blue color filter 22b and the green color filter, for example, can be used a colored photosensitive resin material. On the back gate electrode 16gA drive TFT11A, for example, to form a red color filter 22a and the blue color filter 22b. Provided on the back gate electrode 16gA drive TFT11A, the red color filter 22a and the blue color filter 22b constitute the insulating member 19. When the red color filter 22a and overlapping the blue color filter 22b to form the insulating member 19, the insulating member 19 may function as a light shielding film for the channel region 15cA of the semiconductor layer 15A. Therefore, as the light-shielding film for the channel region 15cA of the semiconductor layer 15A, there is no need to provide a black matrix BM. Not limited to the above example, it is possible to form the insulating member 19 overlapping the two or more color filters that transmit light of different colors from each other. In this case, the same effect can be obtained.

Subsequently, an organic insulating layer 24 for planarization on the color filter layer 22. The organic insulating layer 24 is formed of, for example, a photosensitive resin. Among the organic insulating layer 24, in a region to be an opening CH1 or CH3 (see FIG. 20) after the opening is formed.

Then, on the organic insulating layer 24, the fourth conductive layer (second transparent electrode layer) including the pixel electrode 18B of the pixel TFT11B 18 to the formation. Then, on the fourth conductive layer 18, the third insulating layer (auxiliary capacitor insulating layer) is formed 6i. Then, the third insulating layer 6i, a common electrode (transparent electrode) 20B and the fifth conductive layer including the contact electrodes 64 (third transparent electrode layer) of the pixel TFT11B form a 20. The common electrode 20B is opposed to the pixel electrode 18B via a third insulating layer 6i, and the pixel electrode 18B and the common electrode 20B, and the third insulating layer 6i located between these constitutes an auxiliary capacitance there. As a material for the conductive film for forming a fifth conductive layer 20, it is possible to use various transparent conductive materials, for example, may be used ITO, IZO, a metal oxide such as ZnO.

Then, in a step similar to the liquid crystal display device 100, on the fifth conductive layer 20, the columnar spacers 23a, by forming 23b, the active matrix substrate 10 of the liquid crystal display device 300 is manufactured.

A counter substrate 30 of the liquid crystal display device 300, with the exception of the points having no color filter layer may be the same as the counter substrate 30 of the liquid crystal display device 100.

According to an embodiment of the present invention, without increasing the number of manufacturing steps, with a narrow frame, and it is possible to obtain a display device having excellent reliability. Embodiments of the present invention are widely used in various display devices.

10 Active matrix substrate 1s substrate 2i first insulating layer 4i second insulating layer 6i third insulating layer 11A driving TFT
11B pixel TFT
12 first conductive layer 12Ga, 12 GB gate electrode (first gate electrode)
14 second conductive layer 14sA, 14sB source electrode 14da, 14 dB drain electrodes 15A, 15B semiconductor layer 15 CA, 15CB channel region 15sA, 15sB source region 15Da, 15 dB drain region 16 third conductive layer 16gA second gate electrode 18 fourth conductive layer 19 insulating member 20 fifth conductive layer 22 color filter layer 23a first columnar spacer 23b second columnar spacer 24 organic insulating layer 30 opposite the substrate 31 substrate 32 color filter layer 33 overcoat layer 34 counter electrode 50 liquid crystal layer 60s seal portion 60t transition part 60d drive circuit section 62 conductive particles 64 contact electrode 66a first particulate spacers 66b second particulate spacers 100,100A, 100B, 200,300,900 liquid crystal display device 100f 200f, 300f, 900f frame region 100d, 200d display area

Claims (20)

  1. Comprising an active matrix substrate and a counter substrate disposed so as to face the active matrix substrate,
    A display device comprising a display region defined by a plurality of pixels arranged in a matrix, and a frame region surrounding the display region,
    The frame area,
    A sealing portion surrounding the display area,
    The conductive particles and a transition portion for electrically connecting the counter substrate and the active matrix substrate,
    The active matrix substrate,
    A driving TFT provided in the frame region,
    And a substrate for supporting the driving TFT,
    The driving TFT is,
    A semiconductor layer including a channel region, a source region and a drain region,
    Overlap via the first insulating layer on the channel region of the semiconductor layer, a first gate electrode located between the semiconductor layer and the substrate,
    A source electrode and a drain electrode electrically connected to the source region and the drain region of the semiconductor layer,
    Wherein the channel region of the semiconductor layer overlaps via the second insulating layer, the first gate electrode to the semiconductor layer and a second gate electrode located on the opposite side,
    In the display region, the active matrix substrate has a protrusion structure protruding to the counter substrate side,
    In the frame region, the active matrix substrate is provided on the driving TFT, an insulating member covering the second gate electrode,
    It said insulating member is formed from the same dielectric film and the protrusion structure, the display device.
  2. The protrusion structure, wherein a first columnar spacer for defining the distance between the active matrix substrate and the counter substrate, the display device according to claim 1.
  3. The protrusion structure, wherein a lower second columnar spacer than the first columnar spacer for defining the distance between the active matrix substrate and the counter substrate, the display device according to claim 1.
  4. The second columnar spacers, the same dielectric layer is formed from the first columnar spacers, the display device according to claim 3.
  5. The height of the insulating member, said the height substantially the protrusion structure same display device according to any one of claims 1 4.
  6. Comprising an active matrix substrate and a counter substrate disposed so as to face the active matrix substrate,
    A display device comprising a display region defined by a plurality of pixels arranged in a matrix, and a frame region surrounding the display region,
    The frame area,
    A sealing portion surrounding the display area,
    The conductive particles and a transition portion for electrically connecting the counter substrate and the active matrix substrate,
    The active matrix substrate,
    A driving TFT provided in the frame region,
    And a substrate for supporting the driving TFT,
    The driving TFT is,
    A semiconductor layer including a channel region, a source region and a drain region,
    Overlap via the first insulating layer on the channel region of the semiconductor layer, a first gate electrode located between the semiconductor layer and the substrate,
    A source electrode and a drain electrode electrically connected to the source region and the drain region of the semiconductor layer,
    Wherein the channel region of the semiconductor layer overlaps via the second insulating layer, the first gate electrode to the semiconductor layer and a second gate electrode located on the opposite side,
    In the display region, the active matrix substrate may have different colors the first color filter transmitting light of a color filter layer including the second color filter and the third color filter from each other,
    In the frame region, the active matrix substrate is provided on the driving TFT, an insulating member covering the second gate electrode,
    Said insulating member, the first color filter is formed from at least one same dielectric film of said second color filter and said third color filter, a display device.
  7. The height of the insulating member is larger than half the average particle diameter of the conductive particles, the display device according to any one of claims 1 to 6.
  8. The seal portion includes a first particulate spacer for defining the distance between the active matrix substrate and the counter substrate, the display device according to any one of claims 1 to 7.
  9. The seal portion, the a second particulate spacers positioned between the insulation and the member and the counter substrate, a second particulate spacer for defining the distance between with the insulating member and the active matrix substrate and the counter substrate containing display device according to any one of claims 1 to 8.
  10. The insulation member covers the entire driving TFT, the display device according to any one of claims 1 to 9.
  11. The transition section is provided on one side of the display region, wherein the insulating member covers substantially the entire between said transition portion and the display area, the display device according to any one of claims 1 to 10.
  12. The second gate electrode, the source electrode and are electrically connected, the display device according to any one of claims 1 to 11.
  13. The active matrix substrate includes a contact electrode provided in the frame region,
    The counter substrate includes a counter electrode including a portion facing the contact electrode,
    The transition section electrically connecting the counter electrode and the contact electrode, a display device according to any one of claims 1 to 12.
  14. The contact electrode includes a first conductive layer formed using the same conductive film as the first gate electrode, and / or, the source electrode and the second conductive layer electrically formed from the same conductive film as the drain electrode is connected, the display device according to claim 13.
  15. The transition portion, the first formed in the insulating layer and the second insulating layer, having the first conductive layer, a first opening for connecting said second conductive layer and the contact electrode electrically to each other, wherein the display device according to claim 14.
  16. The transition portion, the contact electrode and further comprising a third conductive layer between the second insulating layer, the third conductive layer is in contact with the contact electrode in said first inner opening, claim the display device according to 15.
  17. The second gate electrode, the third is formed using the same conductive film as the conductive layer, the display device according to claim 16.
  18. The second gate electrode, the are formed of the same conductive film as the contact electrode, a display device according to any of claims 13 16.
  19. The second gate electrode, the second is in contact with the source electrode in a second opening provided in the insulating layer, the display device according to any one of claims 1 18.
  20. The driving TFT, the provided on the second gate electrode includes the second gate electrode and the further electrically the attached additional electrode, the additional electrode is first provided on the second insulating layer 2 and in the opening is connected the source electrode and electrically, the display device according to any one of claims 1-17.
PCT/JP2016/065541 2015-06-01 2016-05-26 Display device WO2016194753A1 (en)

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