WO2016192858A1 - Procédé de fabrication d'un dispositif électronique et dispositif électronique obtenu au moyen dudit procédé - Google Patents
Procédé de fabrication d'un dispositif électronique et dispositif électronique obtenu au moyen dudit procédé Download PDFInfo
- Publication number
- WO2016192858A1 WO2016192858A1 PCT/EP2016/000915 EP2016000915W WO2016192858A1 WO 2016192858 A1 WO2016192858 A1 WO 2016192858A1 EP 2016000915 W EP2016000915 W EP 2016000915W WO 2016192858 A1 WO2016192858 A1 WO 2016192858A1
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- WO
- WIPO (PCT)
- Prior art keywords
- coating
- carrier substrate
- areas
- regions
- metal
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000000576 coating method Methods 0.000 claims abstract description 155
- 239000011248 coating agent Substances 0.000 claims abstract description 151
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 60
- 238000001035 drying Methods 0.000 claims abstract description 23
- 238000001465 metallisation Methods 0.000 claims description 57
- 239000000853 adhesive Substances 0.000 claims description 24
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- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
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- 239000000243 solution Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 239000004920 heat-sealing lacquer Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- CCTFMNIEFHGTDU-UHFFFAOYSA-N 3-methoxypropyl acetate Chemical compound COCCCOC(C)=O CCTFMNIEFHGTDU-UHFFFAOYSA-N 0.000 description 1
- 239000004604 Blowing Agent Substances 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 235000005505 Ziziphus oenoplia Nutrition 0.000 description 1
- 244000104547 Ziziphus oenoplia Species 0.000 description 1
- NPNMHHNXCILFEF-UHFFFAOYSA-N [F].[Sn]=O Chemical compound [F].[Sn]=O NPNMHHNXCILFEF-UHFFFAOYSA-N 0.000 description 1
- 150000001241 acetals Chemical class 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001246 colloidal dispersion Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XWHPIFXRKKHEKR-UHFFFAOYSA-N iron silicon Chemical compound [Si].[Fe] XWHPIFXRKKHEKR-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
Definitions
- the invention relates to a method for producing an electronic device and to an electronic device obtainable according to the method.
- Electronic devices in particular semiconductor structures, solar cells or electrodes, are known e.g. by means of in the field of
- the structuring of a soluble coating in the lift-off process is done by adding the soluble coating
- a coating is initially applied to a film, which forms numerous cracks during drying. These cracks form a dense, coherent network.
- the material is both on (ie above) the coating, as well as deposited in the cracks.
- the material vapor deposited above the coating is also removed. All that remains is the vapor-deposited material present in the crack lines.
- the object of the present invention is to improve the production method known in the prior art.
- further developed electronic devices are to be provided.
- This object is achieved by the feature combinations defined in the independent claims. Further developments of the invention are the subject of the dependent claims.
- Device includes the following steps:
- the metal is deposited on the carrier substrate, in the second regions, the metal is deposited within the cracks of the cracked coating on the carrier substrate and deposited outside the cracks of the cracked coating above the cracked coating;
- a method of manufacturing an (opto) electronic device comprising the following steps:
- Carrier substrate is deposited and outside the cracks with cracks coated coating is deposited above the cracked coating;
- a first motif forming areas has no metallization
- the second regions forming a second motif comprise an opaque or continuous conductive metallization.
- the application of the crack-forming coating can e.g. by printing, in particular by gravure printing, flexographic printing or by means of an inkjet process.
- the above term "opaque or continuous metallization” is to be understood as meaning a full-surface or continuous metal layer, which in particular has a uniform layer thickness.
- the carrier substrate provided in step A) can in particular
- the carrier subs stepped can be, for example, a glass substrate, a film or a multilayer structure.
- the multilayer structure may in particular comprise functional organic and / or inorganic layers which form part of an (opto) electronic device, for example a solar cell.
- the removal step E) can be carried out, for example, by washing with a suitable solvent. Alternatively, the removing step may be accomplished by means of a separately provided adhesive layer
- Carrier substrate in first, first motif forming areas and drying of the crack-forming coating, wherein the coating forms numerous cracks during drying in the form of a dense, coherent network;
- step b) applying a metallization to the first carrier substrate obtained in step b) in such a way that
- the metal is deposited on the carrier substrate.
- the metal is deposited within the cracks on the carrier substrate and deposited outside the cracks above the cracked coating; d) separately providing a second carrier substrate provided with an adhesive coating;
- a transparent, conductive metallization in the form of a dense in the first areas forming a first motif, a transparent, conductive metallization in the form of a dense,
- a first motif forming areas include an opaque, conductive metallization.
- the application of the crack-forming coating can e.g. by printing, in particular by gravure printing, flexographic printing or by means of an inkjet process. 4. (Third aspect of the invention) Electronic device obtainable by the method according to any one of paragraphs 1 to 4.
- Security elements with in transmitted light, and possibly also in reflected light, visually recognizable characters are known.
- the characters may have any shapes, such as numbers, letters, patterns, geometric or figurative representations, etc., and are generally referred to as "negative writing" regardless of their shape
- the security elements are made, for example, by a transparent substrate having a coating, generally If the security element is held against the light, the areas with metallic or other coating appear dark and the areas where the coating has been removed appear bright or at least significantly lighter than the coated areas, depending on the transparency of the
- Finely structured metallizations can eg by etching processes to be provided.
- the metal to be structured is applied in a first step over the entire surface of the substrate and coated in a second step in certain subject areas with a suitable resist.
- the removal (or chemical conversion) of the metal into the non-resist paint is applied in a third step.
- the resist can also be applied over the entire surface and selectively changed by exposure in such a way that certain areas of the resist are selectively removed and the metallization arranged below can be etched accordingly.
- the use of photoresist coatings in security element fabrication is e.g. from EP 2 049 345 B1.
- a washing process in which a carrier film is printed with a high pigment content printing ink in the form of characters, coated with a thin covering layer (for example of aluminum) and then the printing ink together with the cover layer above
- Priority application DE 4 041 025 discloses heat-activatable inks, for example wax-containing emulsions. Upon heating, these emulsions soften and thereby reduce the adhesion to the carrier film, so that in these poorly adhering areas, supported by mechanical treatment, such. As ultrasound, brushing or rubbing, both the softened ink and the overlying layers can be removed.
- Activatable inks colors with foaming additives, as are common in the production of foams disclosed. These blowing agents split gas under the action of heat and produce foam structures. As a result, the volume of the ink increases, whereby the adhesion to the carrier film is reduced and the layers lying above the ink are arched outwards, so that they have a good effect
- WO 97/23357 makes reference to EP 0 516 790 and further discloses activatable inks prepared by treatment with a
- the crack-forming coating used is preferably a dispersion, more preferably a colloidal dispersion.
- the crack-forming coating may be based on a polymer in solution.
- the polymer solution is applied to the substrate, e.g. by imprinting, so that a thin polymer film is produced.
- the thin polymer film cracks during drying.
- the crack formation depends on the choice of the raw materials and the choice of the substrate, the thickness of the crack-forming coating and the drying parameters. They are at the end of the
- Line thickness achievable, for example in the case of silver in the range of 1 ⁇ to 50 ⁇ , wherein the lines are usually so fine that they are recognizable as lines only when using a magnifying glass. In the area the human eye does not dissolve the individual lines, but one recognizes both in reflected light (or reflection), and in transmitted light (or
- the metallized network structure according to the invention is extremely advantageous in view of the substantially higher chemical resistance the metal is in the "normal" layer thickness, while a conventional semi-transparent metallization is very thin and therefore susceptible to corrosion, especially in the case of Al and Cu.
- the metallization according to the invention in the form of a dense, coherent network shows an electrical conductivity and an optical transmission, which is comparable to a full-surface ITO layer.
- the fine metallic lines can be used in combination with conventional embossing lacquers, customary primer compositions and customary heat sealing lacquers, and act as a reflector.
- a washing ink is applied to a carrier substrate, such as a glass substrate, a film or a multilayer structure, in first areas forming a first motif.
- a crack-forming coating is applied to the carrier substrate in second areas forming a second motif and drying of the crack is effected.
- forming coating wherein the coating forms numerous cracks during drying in the form of a dense, coherent network.
- Metal is vapor-deposited on the substrate treated in this way (alternatively, the metal can also be applied wet-chemically).
- the metal is deposited both above the cracked coating, as well as in the cracks. Outside the first and second regions, the metal is deposited on the carrier substrate.
- the cracked coating is then removed, along with the metal deposited above the coating.
- the wash color is removed. The removal can be done for example by washing with a suitable solvent.
- the carrier substrate provided with a metallic network structure on the one hand and a continuous metallization on the other hand can optionally be overcoated with a conventional primer composition or with a layer whose refractive index significantly differs from the refractive index of the embossing lacquer layer. Also one
- Heat sealing lacquer layers are used. Also other optical effects, e.g. Fluorescence, are easily possible by applying additional effect layers, since the reflector used, i. the metallic one
- coating is advantageously carried out by dissolving with a suitable solvent.
- a suitable solvent The choice of solvent takes place
- the following solvents can be used: methyl acetate, ethyl acetate, propyl acetate, butyl acetate, methoxypropyl acetate, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone, methylene chloride, chloroform, toluene, xylene, methanol, ethanol, 2-propanol.
- Solvent can be used. Alternatively, a detachment of the crack-forming coating by infiltration can take place. In this case, in addition to the solvents mentioned also aqueous solutions, mixtures of solvents and water, optionally with surfactants, possibly with defoamers and other additives are used.
- Replacement or dissolution of the cracked coating can also be supported by spray nozzles or mechanically by brushing, rolling or by felts.
- a crack-forming coating is applied to a carrier substrate, such as a glass substrate, a film or a multilayer structure, in first regions forming a first motif. After drying, the crack-forming coating, in which the
- the metal in the regions outside the cracked coating, the metal is deposited on the carrier substrate; and in the areas of the cracked coating, the metal is deposited within the cracks on the carrier substrate and deposited outside the cracks above the cracked coating.
- a transparent, conductive metallization in the form of a dense in the first areas forming a first motif, a transparent, conductive metallization in the form of a dense,
- a first motif forming areas include an opaque, conductive metallization.
- the second, separate substrate e.g. a film, with a large area under the laminating (or.
- Adhesive conditions adhesive coating coated.
- large area it is meant that the extent is at least as large as the area of the crack-forming layer to be removed.
- the layer thickness of the adhesive coating is after a possibly occurring
- the metal lying on the crack-forming coating combines with the adhesive
- the crack-forming coating serves as a spacer for Carrier substrate and deposited directly on the carrier substrate metal. Depending on the choice of the crack-forming coating occurs in the
- the adhesively coated film i.e., the second, separate substrate
- the negative image of the metal after the separation winding is at least the negative image of the metal after the separation winding.
- the film can be further processed if necessary.
- the foil is metallic with very high reflectivity (e.g., higher than 85%) but not electrically conductive.
- the Device can rely on a single metal.
- a metal e.g. Aluminum, silver, copper, nickel, iron, chromium, cobalt, gold, titanium, tin, zinc or an alloy of one or more of the foregoing elements (e.g., an iron-silicon alloy).
- the metallization may be based on a multilayer metallization, e.g. is obtainable by successive vapor deposition.
- An advantageous multilayer metallization is e.g. a Cr layer followed by an Al layer. The adhesion of the Al layer to the layer structure is improved by the Cr layer.
- an electrically conductive polymer for example, is an electrically conductive polymer based on thiophene such as poly-3,4-ethylenedioxythiophene (PEDOT or PEDT).
- PEDOT or PEDT poly-3,4-ethylenedioxythiophene
- Anor ganic, transparent and conductive layers, such as metal oxides such as titanium dioxide, indium tin oxide or fluorine-tin oxide can be applied.
- These additional layers can also serve to improve the electrical properties of the metallization according to the invention, such as
- metal is deposited within the cracks of the cracked coating, metal may also be deposited above the cracked coating.
- the cracked coating is then removed, along with any metal deposited above the coating.
- the step of removing may e.g. by washing with a suitable solvent ("Alternative 1")
- the removal step may be accomplished by means of a separately provided adhesive layer
- the carrier substrate can be provided in certain areas with a crack-forming coating.
- the carrier substrate can additionally be provided with a transparent lacquer in certain regions (which are arranged, in particular, outside the regions of the tear-forming coating) which forms no cracks.
- Metallization takes place the step of removing the metallization, which is located above the cracked coating on the one hand, and above the transparent varnish on the other. This step is done by means of (See the above "Alternative 2".) In this way, an optoelectronic device can be produced which does not have any metallization in the region of the transparent lacquer, This procedure is particularly advantageous in the production method according to FIG the second aspect of the invention described above.
- Transparent, conductive metallization in the form of a dense, coherent network can be subsequently removed by means of laser radiation in certain areas (so-called laser demetallization). In this way, a structuring of the transparent, conductive metallization
- Metallization be subsequently removed by laser radiation in certain areas. In this way structuring of the opaque, conductive metallization is possible, i. it can
- the electronic device can be referred to as an optoelectronic device, in particular because of its optical properties.
- the electronic device may be an optronic device, so z. working electronically and by means of light (eg hybrid circuit with active light elements / conductors), working electronically and by means of light
- the light sensor can be influenced (eg light sensor, light switch), working electronically and processing light (solar cell, light coupler, light filter ).
- working electronically and processing light solar cell, light coupler, light filter .
- partially existing transparency of the electronic device can also be used as a purely passive element, eg for optical design or as Review area (for the viewer) of the electronic device, serve.
- a pattern formed by conductive or non-conductive regions may be referred to as a motif.
- FIG. 1 shows the individual production steps for obtaining a transparent, conductive metallization in the form of a dense, coherent network
- Figure 2 is a transparent, conductive metallization in the form of a dense, coherent network
- FIGS. 3-4 show a preparation of a device according to the invention
- FIG. 5 shows the electronic device of FIG. 4 in FIG.
- FIGS. 6-9 show a further production of a device according to the invention
- FIGS. 10-12 show a variant of that shown in FIGS. 6, 7 and 9 Manufacturing process, in addition to a
- Figure 1 illustrates the individual manufacturing steps for obtaining a transparent, conductive metallization in the form of a
- the carrier substrate 1 is provided with a crack-forming coating 2 in a first step.
- the crack-forming coating 2 is based, for example, on dispersions of SiO 2 nanoparticles or of acrylic resin nanoparticles.
- the application of the crack-forming coating 2 is preferably carried out by printing technology, for example by gravure printing, flexographic printing or by means of an inkjet process.
- the crack-forming coating 2 forms during drying numerous cracks 3 in the form of a dense, coherent network.
- a metallization 4 is shown schematically in the figure 1 in the form of individual black dots.
- the metallization 4 is deposited on the one hand above the cracked coating 2 and on the other hand is deposited within the cracks 3 of the coating 2.
- Carrier substrate 1 remains a transparent, conductive metallization 5 in the form of a dense, coherent network.
- Figure 2 shows the transparent, conductive metallization 5 in the form of a dense, coherent network schematically in plan view in an enlarged view.
- Figures 3 to 5 illustrate the manufacture of a security element according to the first aspect of the invention.
- a carrier substrate 1 is printed with wash ink 6 in the form of a motif. Subsequently, 7 further motif elements are printed using a crack-forming lacquer.
- the crack-forming coating 7 forms numerous cracks 8 during drying in the form of a dense,
- FIG. 4 shows the obtained (opto) electronic device according to FIG.
- first regions 10 forming a "true” negative writing i.e., voids without any metal, without electrical conductivity
- third areas 12 which form a negative writing or a transparent area with electrical conductivity, generated by a metallic
- FIG. 5 shows the (opto) electronic device of FIG. 4 in FIG.
- Figures 6 to 9 illustrate the manufacture of an (opto) electronic device according to the second aspect of the invention.
- the removal of the cracked coating is carried out not by means of a solvent, but by a detachment in the form of a kind of lamination (or gluing) and separation winding.
- Coating 7 forms numerous cracks 8 during drying in the form of a dense, coherent network. Thereafter, the metallizing step, e.g. by vapor deposition of metal 9.
- the metallizing step e.g. by vapor deposition of metal 9.
- Metallization 9 deposits on the one hand above the cracked coating 7 and above the carrier substrate 1 and on the other hand is deposited within the cracks 8 of the coating 7.
- the precursor of an (opto) electronic device shown in Figure 6 is adhered to a separate device 13 having a substrate 14 (e.g., a film) provided with an adhesive coating 15.
- a substrate 14 e.g., a film
- the metal on the cracked coating 7 connects with the adhesive coating 15.
- the coating 7 provided with cracks serves as
- Figures 10-12 show a variant of the manufacturing method shown in Figures 6, 7 and 9, wherein in addition a transparent lacquer is used.
- Coating 7 forms numerous cracks 8 during drying in the form of a dense, coherent network.
- the carrier substrate 1 is provided with areas 16 of a transparent lacquer.
- the transparent paint 16 forms no cracks.
- the metallizing step e.g. by vapor deposition of metal 9.
- the metallization 9 is deposited on the one hand above the cracked coating 7, above the transparent varnish 16 and above the carrier substrate 1 and on the other hand is deposited within the cracks 8 of the coating 7.
- the precursor of an (opto) electronic device shown in Figure 10 is adhered to a separate device 13 having a substrate 14 (e.g., a film) provided with an adhesive coating 15.
- a substrate 14 e.g., a film
- the metal lying on the cracked coating 7 and the metal lying on the transparent varnish 16 bonds with the adhesive coating 15.
- the metal is peeled off from the cracked coating 7 and from the transparent varnish 16 (see FIG. 12).
- the (opto) electronic device obtained in this way has no area in the region 16 of the transparent lacquer
- the transparent varnish 16 can be chosen with respect to its objective nature that it comes in the separation winding either for stripping the metal from the transparent varnish 16 (see Figure 12) or for complete removal of the transparent varnish 16 (similar to that shown in Figure 9 ).
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
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- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Priority Applications (1)
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DE112016002518.1T DE112016002518A5 (de) | 2015-06-05 | 2016-06-03 | Verfahren zum Herstellen einer elektronischen Vorrichtung und daraus erhältliche elektronische Vorrichtung |
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DE102015007238.2A DE102015007238B4 (de) | 2015-06-05 | 2015-06-05 | Verfahren zum Herstellen einer optoelektronischen Vorrichtung |
DE102015007238.2 | 2015-06-05 |
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WO2016192858A1 true WO2016192858A1 (fr) | 2016-12-08 |
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PCT/EP2016/000915 WO2016192858A1 (fr) | 2015-06-05 | 2016-06-03 | Procédé de fabrication d'un dispositif électronique et dispositif électronique obtenu au moyen dudit procédé |
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WO (1) | WO2016192858A1 (fr) |
Cited By (6)
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WO2021023394A1 (fr) | 2019-08-02 | 2021-02-11 | Giesecke+Devrient Currency Technology Gmbh | Procédé de production de dispositif électronique |
DE102020005643A1 (de) | 2020-09-15 | 2022-03-17 | Giesecke+Devrient Currency Technology Gmbh | Transparente, leitfähige Folie, Verfahren zum Herstellen derselben und Verwendung |
DE102020006108A1 (de) | 2020-10-06 | 2022-04-07 | Giesecke+Devrient Currency Technology Gmbh | Transparente, leitfähige Folie und Verwendung derselben |
CN114630456A (zh) * | 2020-12-11 | 2022-06-14 | 捷德货币技术有限责任公司 | 传导膜、其制造方法和用途 |
DE102021000478A1 (de) | 2021-02-01 | 2022-08-04 | Giesecke+Devrient Currency Technology Gmbh | Maskenbelichtungsverfahren, transparente, leitfähige Metallisierung und Pigment |
EP4116106A1 (fr) | 2021-07-06 | 2023-01-11 | Giesecke+Devrient Currency Technology GmbH | Document de sécurité et procédé de production d'un document de sécurité |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102023005113A1 (de) | 2022-12-12 | 2024-06-13 | Hermann-Frank Mueller | Schmelzofen |
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WO2021023394A1 (fr) | 2019-08-02 | 2021-02-11 | Giesecke+Devrient Currency Technology Gmbh | Procédé de production de dispositif électronique |
DE102020005643A1 (de) | 2020-09-15 | 2022-03-17 | Giesecke+Devrient Currency Technology Gmbh | Transparente, leitfähige Folie, Verfahren zum Herstellen derselben und Verwendung |
WO2022058041A1 (fr) | 2020-09-15 | 2022-03-24 | Giesecke+Devrient Currency Technology Gmbh | Film conducteur transparent, son procédé de production et son utilisation |
DE102020006108A1 (de) | 2020-10-06 | 2022-04-07 | Giesecke+Devrient Currency Technology Gmbh | Transparente, leitfähige Folie und Verwendung derselben |
WO2022073632A1 (fr) | 2020-10-06 | 2022-04-14 | Giesecke+Devrient Currency Technology Gmbh | Film conducteur transparent et son utilisation |
CN114630456A (zh) * | 2020-12-11 | 2022-06-14 | 捷德货币技术有限责任公司 | 传导膜、其制造方法和用途 |
EP4013188A1 (fr) | 2020-12-11 | 2022-06-15 | Giesecke+Devrient Currency Technology GmbH | Feuille conductrice, son procédé de fabrication et utilisation |
DE102020007607A1 (de) | 2020-12-11 | 2022-06-15 | Giesecke+Devrient Currency Technology Gmbh | Leitfähige Folie, Verfahren zum Herstellen derselben und Verwendung |
DE102021000478A1 (de) | 2021-02-01 | 2022-08-04 | Giesecke+Devrient Currency Technology Gmbh | Maskenbelichtungsverfahren, transparente, leitfähige Metallisierung und Pigment |
WO2022161737A1 (fr) | 2021-02-01 | 2022-08-04 | Giesecke+Devrient Currency Technology Gmbh | Procédé d'exposition de masque, métallisation conductrice transparente et pigment |
EP4116106A1 (fr) | 2021-07-06 | 2023-01-11 | Giesecke+Devrient Currency Technology GmbH | Document de sécurité et procédé de production d'un document de sécurité |
DE102021003493A1 (de) | 2021-07-06 | 2023-01-12 | Giesecke+Devrient Currency Technology Gmbh | Sicherheitsdokument und Verfahren zur Herstellung eines Sicherheitsdokuments |
Also Published As
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DE102015007238B4 (de) | 2017-06-22 |
DE102015007238A1 (de) | 2016-12-08 |
DE112016002518A5 (de) | 2018-02-22 |
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