WO2016188041A1 - 一种电致发光器件及其制备方法、显示基板、显示装置 - Google Patents

一种电致发光器件及其制备方法、显示基板、显示装置 Download PDF

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WO2016188041A1
WO2016188041A1 PCT/CN2015/093961 CN2015093961W WO2016188041A1 WO 2016188041 A1 WO2016188041 A1 WO 2016188041A1 CN 2015093961 W CN2015093961 W CN 2015093961W WO 2016188041 A1 WO2016188041 A1 WO 2016188041A1
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layer
forming
electroluminescent device
metal cathode
transparent
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French (fr)
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吴海东
玄明花
赖韦霖
冯翔
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to US15/322,568 priority Critical patent/US10103349B2/en
Publication of WO2016188041A1 publication Critical patent/WO2016188041A1/zh
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80517—Multilayers, e.g. transparent multilayers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
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    • H10K50/14—Carrier transporting layers
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    • H10K50/00—Organic light-emitting devices
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    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
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    • H10K50/00—Organic light-emitting devices
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    • H10K50/81—Anodes
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    • H10K50/82—Cathodes
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
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    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
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    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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    • H10K2102/301—Details of OLEDs
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an electroluminescent device, a method for fabricating the same, a display substrate, and a display device.
  • the OLED device in the AM-OLED (Active Matrix-Organic Light-Emitting Display) display emits light mainly from the cathode side; as shown in FIG. 1, the anode 040 and the cathode 020 They are respectively located on both sides of the functional layer 030.
  • an applied electric field greater than a certain threshold is applied to the anode 040 and the cathode 020, holes and electrons are injected from the anode 040 and the cathode 020 to the luminescent layer in the functional layer 030, respectively.
  • the combination causes light to be emitted; as shown by the arrow in the figure, light is emitted from the side of the cathode 020 located above, thereby realizing display.
  • Embodiments of the present invention provide an electroluminescent device, a method for fabricating the same, a display substrate, and a display device.
  • the overall light extraction rate of the OLED device can be improved without reducing the thickness of the metal cathode, thereby ensuring a good display effect.
  • an embodiment of the present invention provides an electroluminescent device, the electroluminescent device comprising: a metal cathode layer, a functional layer, and a transparent anode layer on a substrate; wherein the transparent anode layer is located at The light-emitting side of the electroluminescent device; the functional layer being located between the metal cathode layer and the transparent anode layer, and comprising: an electron transport layer, a light-emitting layer, and a hole transport layer sequentially away from the metal cathode layer.
  • the electroluminescent device further comprises: a transparent conductive layer between the base substrate and the metal cathode layer, and the transparent conductive layer is in contact with the metal cathode layer.
  • the transparent conductive layer is made of indium tin oxide, indium zinc oxide, fluorine It is composed of any one of doped tin oxide, gallium indium tin oxide, and zinc indium tin oxide.
  • the transparent conductive layer has a thickness of 10-20 nm.
  • the electroluminescent device further includes: a transparent buffer layer between the functional layer and the transparent anode layer; wherein a hole mobility of the transparent buffer layer material is greater than or equal to 10 -5 cm 2 ⁇ s -1 ⁇ v -1 .
  • the transparent buffer layer has a thickness of 50 to 150 nm.
  • the metal cathode layer has a thickness of 20 to 100 nm.
  • the functional layer further includes: at least one of an electron injection layer, an electron blocking layer, and a hole injection layer; wherein the electron injection layer is located at the metal cathode layer and the electron transport Between the layers; the electron blocking layer is located between the light emitting layer and the hole transporting layer; and the hole injection layer is located between the hole transporting layer and the transparent anode layer.
  • An embodiment of the present invention further provides a method for fabricating an electroluminescent device, the method comprising: forming a metal cathode layer, a functional layer, and a transparent anode layer on a substrate; wherein the transparent anode layer is formed a light emitting side of the electroluminescent device; the functional layer formed is located between the metal cathode layer and the transparent anode layer, and includes: an electron transport layer, a light emitting layer, and a hole transport sequentially away from the metal cathode layer Floor.
  • the preparation method further comprises: forming a transparent buffer layer on the formed functional layer; wherein the transparent buffer layer material is empty
  • the hole mobility is greater than or equal to 10 -5 cm 2 ⁇ s -1 ⁇ V -1 .
  • the transparent buffer layer is formed to have a thickness of 50 to 150 nm.
  • the transparent anode layer is formed by a low temperature film forming process; wherein the film forming temperature of the low temperature film forming process is less than or equal to 100 ° C.
  • the low temperature film forming process comprises at least one of a negative ion beam sputtering method and a low temperature chemical vapor deposition method.
  • the preparation method further comprises: forming a transparent conductive layer on the base substrate; forming the metal cathode layer comprises: forming the metal on the transparent conductive layer a cathode layer, and the transparent conductive layer is in contact with the metal cathode layer.
  • the forming the functional layer further comprises: forming at least one of an electron injection layer, an electron blocking layer, and a hole injection layer; wherein forming the electron injection layer comprises: forming a After the metal cathode layer is formed, and before the electron transport layer is formed, the electron injecting layer is formed; forming the electron blocking layer includes: forming the electron blocking layer after forming the light emitting layer, and forming a hole transport layer; Forming the hole injection layer includes forming the hole injection layer after forming the hole transport layer and before forming the transparent anode layer.
  • the embodiment of the present invention further provides a display substrate, comprising the electroluminescent device according to any one of the above items on a substrate.
  • the embodiment of the present invention further provides a method for preparing a display substrate, the method comprising: forming a step of forming an electroluminescent device on a substrate; wherein the electroluminescent device is prepared according to any one of the above method.
  • an embodiment of the present invention further provides a display device, where the display device includes the display substrate described above.
  • An electroluminescent device, a method for preparing the same, a display substrate, and a display device provided by the embodiments of the present invention, wherein the light emitted from the functional layer is emitted from the side of the transparent anode layer in the electroluminescent device, thereby avoiding The metal element and/or alloy with low light transmittance hinder the light, so that the overall light-emitting rate of the electroluminescent device is high, ensuring a good display effect; meanwhile, the metal cathode layer is not transparent due to the low transmittance.
  • the thickness of the metal cathode layer can be made thicker, thereby reducing the surface resistance of the metal cathode layer, reducing the driving voltage of the device, and avoiding an increase in energy consumption.
  • FIG. 1 is a schematic cross-sectional view of an OLED device provided by the prior art
  • FIG. 2 is a schematic diagram of a microcavity effect of light generation in an OLED device provided by the prior art
  • FIG. 3 is a schematic cross-sectional view of an electroluminescent device according to an embodiment of the present invention.
  • FIG. 4 is a cross-sectional structural view 2 of an electroluminescent device according to an embodiment of the present invention.
  • FIG. 5 is a cross-sectional structural diagram of an electroluminescent device according to an embodiment of the present invention. three;
  • FIG. 6 is a schematic cross-sectional view showing a cross-sectional structure of an electroluminescent device according to an embodiment of the present invention.
  • 01-electroluminescent device 10-substrate substrate; 20-metal cathode layer; 30-functional layer; 31-electron transport layer; 32-light-emitting layer; 33-hole transport layer; 34-electron injection layer; Electron barrier layer; 36-hole injection layer; 40-transparent anode layer; 50-transparent conductive layer; 60-transparent buffer layer.
  • orientation or positional relationship of the terms "upper”, “lower” and the like as used in the specification and claims of the present invention is based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description of the present invention and The simplification of the description is not intended to limit or imply that the device or component that is referred to has a particular orientation, is constructed and operated in a particular orientation, and thus is not to be construed as limiting.
  • an embodiment of the present invention provides an electroluminescent device 01.
  • the electroluminescent device 01 includes a metal cathode layer 20, a functional layer 30, and a transparent anode layer 40 on a substrate 10;
  • the transparent anode layer 40 is located on the light exiting side of the electroluminescent device 01;
  • the functional layer 30 is located between the metal cathode layer 20 and the transparent anode layer 40, and includes: an electron transport layer 31 that is sequentially away from the metal cathode layer 20 ( An electron transport layer (ETL), an emission layer (EL), and a hole transport layer (HTL).
  • ETL electron transport layer
  • EL emission layer
  • HTL hole transport layer
  • the first substrate 10 on which the above-described electroluminescent device 01 is formed may be formed, for example, in a TFT array or the like, and is not limited thereto.
  • the transparent anode layer 40 is located on the light-emitting side of the electroluminescent device 01, that is, as shown in FIG. 3, the illumination mode of the electroluminescent device 01 is top emission; of course, the illumination mode of the electroluminescent device 01 can also be bottom. Glowing.
  • the above-described electroluminescent device 01 formed may be, for example, an OLED device.
  • each device is connected to a TFT (Thin Film Transistor) in the array substrate, and is independently controlled by corresponding TFT addressing. Therefore, the pixels are selectively adjusted independently, which facilitates the realization of OLED colorization.
  • TFT Thin Film Transistor
  • the present invention is implemented.
  • the illumination mode shown in FIG. 3 is taken as an example, that is, the illumination mode of the electroluminescence device 01 is top emission, so that the light emitted by the electron-hole recombination is emitted as efficiently as possible to realize display.
  • the structure of the above electroluminescent device 01 provided by the embodiment of the present invention can also be used for bottom emission, thereby improving the light extraction rate of the bottom emission device in the prior art, which is different from the top emission type device in that it is different from the array substrate.
  • the location of the setting will not be described here.
  • the metal cathode layer 20 may be made of at least one of Mg, Ag, Al, Li, K, and Ca. That is, it may be a simple substance of the above metal element, or a metal alloy composed of two or more of the above metal elements, such as Mg x Ag (1-x) or Li x Al (1-x) , or Li x Ca (1-x) , or Li x Ag (1-x) , where 0 ⁇ x ⁇ 1.
  • the transparent anode layer 40 may be Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Fluorine-Doped Tin Oxide (FTO). ), gallium indium tin oxide (Gallium Indium Tin Oxide, abbreviated as GITO, which may be, for example, Ga 0.08 In 0.28 Sn 0.64 O 3 ), and zinc indium tin oxide (ZITO Indium Tin Oxide, abbreviated as ZITO)
  • the specific chemical formula may be, for example, a material of any one of Zn 0.64 In 0.88 Sn 0.66 O 3 ).
  • the above-mentioned transparent conductive material has a work function of more than 5 eV, which is favorable for sufficient excitation of holes to increase current.
  • the transparent anode layer 40 may have a thickness of 10 to 100 nm, and the thickness range may make the transparent anode layer 40 have a high light transmittance, and the anode may not be formed due to an excessively small thickness. The problem of excessive surface resistance.
  • ETL may be composed of an oligothiophene derivative, a triazole derivative, a quinoxaline derivative, a perfluorinated aromatic compound, etc.;
  • EL may be Alq 3 (8-hydroxyquinoline aluminum) and its derivatives
  • the HTL may be composed of a triphenylamine derivative and some high molecular polymers, and is not specifically limited.
  • the electroluminescent device 01 provided by the embodiment of the present invention, because the metal cathode layer 20 having a low light transmittance is not used as the light exiting side, and the transparent anode layer 40 is used as the light exiting side, and is excited from the functional layer 30.
  • the light is emitted from the side of the transparent anode layer 40, and the metal element and/or the alloy having a low light transmittance is prevented from obstructing the light, so that the overall light-emitting rate of the electroluminescent device 01 is high.
  • the cathode is generally used as the light exiting side in the prior art, the cathode is equivalent to a translucent film having a reflective function. Further, as shown in FIG. 2, a cathode is formed between the cathode and the metal reflective layer 050 located under the anode. A microcavity will produce a microcavity effect, and the microcavity length L has the following relationship with the wavelength ⁇ of the light emitted by the OLED device:
  • n i is the refractive index of the organic matter of each layer in the functional layer
  • d i is the film thickness of each organic layer in the functional layer
  • the depth of light entering the metal film layer k is the extinction coefficient of each organic layer
  • n s is the refractive index of each organic film layer
  • k m is the extinction coefficient of the metal film layer
  • n m is the refractive index of the metal film layer
  • an OLED device having a specific cavity length can emit only light of a specific wavelength.
  • the actual cavity length of the device changes under different viewing angles: as shown in Figure 2, the cavity length L when the observer is directly in front of the OLED device is different from the squinting cavity lengths L1 and L2, which will result in different viewing angles.
  • the wavelength ⁇ of the light emitted by the OLED device seen by the observer is changed, so that the OLED device has a viewing angle defect, resulting in poor display.
  • the transparent anode layer 40 as the light-emitting side is usually made of a material having a high transmittance of ITO, IZO, or the like, and the transparent anode layer 40 and the metal cathode layer 20 are There is no microcavity effect between the two, thereby avoiding the angle of view of the device caused by the microcavity effect of the metal cathode layer 20 on the electroluminescent device. Defects to ensure a good display.
  • the light-emitting method of the electroluminescent device 01 formed as described above emits light from the side of the transparent anode layer 40.
  • a part of the light emitted by the electron-hole radiation recombination is from the top.
  • the transparent anode layer 40 is emitted on one side and the other portion is directed to the bottom. Therefore, the thickness of the metal cathode layer 20 can be made thicker, thereby functioning as a reflective metal layer in the prior art, that is, the downwardly emitted light is passed through.
  • the opaque metal cathode layer 20 is at the cathode of the above electroluminescent device 01 It can also function as a reflective metal layer, so that the thickness can be made larger, for example, can be 20-100 nm, thereby reducing the surface resistance of the metal cathode layer 20, reducing the driving voltage of the device, and avoiding an increase in power consumption.
  • the underlying metal cathode layer 20 in the electroluminescent device 01 needs to pass through a via hole on the passivation layer. It is connected to the drain (or source) in the TFT to achieve independent control of addressing each of the above-described electroluminescent devices. Since the thickness of the passivation layer is large, the depth of the via hole is also large, and the metal cathode layer 20 is composed of a simple metal and/or an alloy, and a fault is easily generated at the via hole, so that the metal cathode layer 20 and the TFT cannot be formed. Connected well, affecting the normal display of AMOLED.
  • the electroluminescent device 01 further includes: a transparent conductive layer 50 between the base substrate 10 and the metal cathode layer 20, and the transparent conductive layer 50 is in contact with the metal cathode layer 20. That is, when the above electroluminescent device operates, the two are in an electrically connected state.
  • the transparent conductive layer 50 can be generally made of any one of ITO, IZO, FTO, GITO (such as Ga 0.08 In 0.28 Sn 0.64 O 3 ), and ZITO (such as Zn 0.64 In 0.88 Sn 0.66 O 3 ).
  • the problem of the fault is less likely to occur, so that the connection of the electroluminescent device 01 and the TFT can be ensured to achieve the above-described addressing independent control.
  • the thickness of the transparent conductive layer 50 is preferably 10-20 nm, which ensures that the transparent conductive layer 50 does not generate a fault when it is connected to the TFT through the via hole on the passivation layer, and does not significantly increase the device.
  • the overall thickness is preferably 10-20 nm, which ensures that the transparent conductive layer 50 does not generate a fault when it is connected to the TFT through the via hole on the passivation layer, and does not significantly increase the device. The overall thickness.
  • the electroluminescent device 01 further includes: a transparent buffer layer 60 between the functional layer 30 and the transparent anode layer 40; wherein the hole mobility of the material constituting the transparent buffer layer 60 is greater than or equal to 10 -5 cm 2 ⁇ s -1 ⁇ V -1 .
  • the hole mobility of the material constituting the transparent buffer layer 60 is 10 -5 cm 2 ⁇ s -1 ⁇ v -1 or more , when the above electroluminescent device 01 operates, the hole injection and transport ability can be improved. To improve the current efficiency of the device.
  • the material constituting the transparent buffer layer 60 may be TNATA (4,4',4'-tris[2-naphthyl(phenyl)amino]triphenylamine, 4,4',4'-tris[2-naphthylbenzene Hole mobility of 10, 10, 4-phenylamine, CuPc (Copper (II) phthalocyanine, copper phthalocyanine), PETDOT (poly 3,4-ethylenedioxythiophene/polystyrene sulfonate), etc. -5 cm 2 ⁇ s -1 ⁇ V -1 organic material.
  • the transparent buffer layer 60 may have a thickness of 50-150 nm. This thickness not only enables the transparent buffer layer 60 to have the corresponding transition transparent anode layer 40 and the functional layer 30, but also prevents the transparent anode layer 40 from being prepared. Process conditions, such as temperature, reaction source and other factors may have an impact on the underlying functional layer 30 to ensure good performance of the device.
  • the functional layer 30 may further include:
  • At least one of an electron injection layer (EIL) 34, an electron blocking layer (EBL) 35, and a hole injection layer (HIL) 36 At least one of an electron injection layer (EIL) 34, an electron blocking layer (EBL) 35, and a hole injection layer (HIL) 36.
  • EIL electron injection layer
  • EBL electron blocking layer
  • HIL hole injection layer
  • the electron injection layer 34 is located between the metal cathode layer 20 and the electron transport layer 31, and functions to increase the efficiency of electrons excited from the metal cathode layer 20 to the electron transport layer 31.
  • the electron injection layer 34 may be Liq (lithium 8-hydroxyquinolate).
  • the electron blocking layer 35 is located between the hole transport layer 33 and the light emitting layer 32, and functions to block radiation from recombining electrons across the light emitting layer 32 and holes in the hole transport layer 33, thereby causing a decrease in luminous efficiency;
  • the barrier layer 35 may be composed of TFB (poly(9,9-phthalic acid dioctyl-indole-co-N-(4-phenyl)aniline), TAPC (1,1-bis[(di-4-tolylamino) ) phenyl]cyclohexane), NPB (N,N'-biphenyl-N,N'-(2-naphthalene)-(1,l'-phenyl)-4,4'-diamine) Material composition.
  • TFB poly(9,9-phthalic acid dioctyl-indole-co-N-(4-phenyl)aniline
  • TAPC 1,1-bis[(di-4-tolylamino) )
  • the hole injection layer 36 is located between the transparent anode layer 40 and the hole transport layer 33, and functions to increase the efficiency of injection of holes excited from the transparent anode layer 40 into the hole transport layer 33; for example, a hole injection layer 36 may be composed of CuPc (copper phthalocyanine, Copper (II) phthalocyanine).
  • FIG. 6 will be described by taking the functional layer 30 as an example including the above-described six structural layers of HTL, EL, ETL, HIL, EBL, and EIL.
  • only the above-mentioned electroluminescent device 01 includes a transparent buffer layer 60 as an example.
  • the hole injection layer 36 is located under the hole transport layer 33 and the transparent buffer layer under the transparent anode layer 40. Between 60;
  • the hole injection layer 36 is located between the hole transport layer 33 and the transparent anode layer 40.
  • the three layers of HTL, EL, and ETL are the structural layers necessary for electroluminescence; the three layers of HIL, EBL, and EIL are the structural layers required to further improve the luminous efficiency, except for the above-mentioned HTL, EL, and ETL.
  • the functional layer 30 may include only at least one of the three layers of the HIL, the EBL, and the EIL, and is not specifically limited.
  • the embodiment of the invention further provides a display substrate comprising the above-mentioned electroluminescent device 01 on the substrate substrate 10.
  • the base substrate 10 may be, for example, an array substrate on which a TFT array is formed.
  • the embodiment of the invention further provides a method for preparing the above electroluminescent device 01, the preparation method comprising:
  • a metal cathode layer 20, a functional layer 30, and a transparent anode layer 40 are formed on the base substrate 10; wherein the transparent anode layer 40 is formed on the light-emitting side of the electroluminescent device OLED, that is, light from the light-emitting layer
  • the transparent anode layer 40 is emitted on one side;
  • the formed functional layer 30 is located between the metal cathode layer 20 and the transparent anode layer 40, and includes: an electron transport layer 31, a light-emitting layer 32, and a hole transport which are sequentially away from the metal cathode layer 20.
  • Layer 33 is
  • the metal cathode layer 20, the functional layer 30, and the transparent anode layer 40 are formed on the base substrate 10, and the metal cathode layer 20, the functional layer 30, and the transparent anode layer 40 may be sequentially formed, that is, The illuminating manner of the formed electroluminescent device 01 is top illuminating; or the above step may also be to sequentially form the transparent anode layer 40, the functional layer 30, and the metal cathode layer 20, that is, the illuminating manner of the formed electroluminescent device 01 is Bottom glow.
  • each device when the electroluminescent device 01 formed by the above preparation method is applied to a display device, such as an AM-OLED, each device is connected to a TFT in the array substrate, and is independently controlled by corresponding TFT addressing, thereby for each pixel.
  • a display device such as an AM-OLED
  • each device is connected to a TFT in the array substrate, and is independently controlled by corresponding TFT addressing, thereby for each pixel.
  • Selectively adjusting independently, and facilitating the realization of OLED colorization; and preferred embodiments of the present invention are preferred because the TFTs arranged in an array on the array substrate and the signal lines such as the gate lines and the data lines connected to the TFTs are opaque. Taking the light-emitting mode shown in FIG.
  • the light-emitting mode of the electroluminescent device 01 formed is a top-emitting light, so that the light emitted by the electron-hole recombination is emitted as efficiently as possible to achieve display.
  • the structure of the electroluminescent device 01 formed by the above preparation method It can also be used for the bottom emission, thereby improving the light extraction rate of the prior art bottom emission device, which is different from the top emission type device in the arrangement position with respect to the array substrate, and will not be described herein.
  • the metal cathode layer 20 can be formed, for example, by vacuum evaporation, magnetron sputtering, or ion beam sputtering; the layers in the functional layer 30 can be formed by a vacuum evaporation process.
  • the metal cathode layer 20 having a low light transmittance is not used as the light exiting side, and the transparent anode layer 40 is used as the light emitting side of the device, it is excited from the functional layer 30.
  • the light is emitted from the side of the transparent anode layer 40, which avoids the obstruction of light by the metal element and/or alloy having a low light transmittance, so that the overall light-emitting rate of the electroluminescent device 01 is high; meanwhile, due to the transparent anode layer 40 Usually composed of ITO, IZO and other materials with high transmittance, the microcavity effect is not generated between the transparent anode layer 40 and the metal cathode layer 20, and the electroluminescence device is prevented from generating microcavities on the metal cathode layer 20. The device caused by the effect produces a viewing angle defect to ensure a good display effect.
  • the light-emitting method of the electroluminescent device 01 formed as described above emits light from the side of the transparent anode layer 40, and a part of the light emitted by the electron-hole radiation recombination is emitted from the side of the transparent anode layer 40, and the other portion is emitted toward the side.
  • the thickness of the metal cathode layer 20 can be made thicker to function as a reflective metal layer in the prior art, that is, as shown in FIG. 3, the downwardly emitted light passes through the metal cathode layer 20.
  • the opaque metal cathode layer 20 acts as a cathode of the above electroluminescent device 01, it can also reflect
  • the metal layer functions, and thus its thickness can be made large, for example, can be 20-100 nm, thereby reducing the sheet resistance of the metal cathode layer 20, reducing the driving voltage of the device, and avoiding an increase in energy consumption.
  • the preparation method further includes:
  • a transparent buffer layer 60 is formed on the formed functional layer 30; wherein the hole constituting the material of the transparent buffer layer 60 has a hole mobility of 10 -5 cm 2 ⁇ s -1 ⁇ V -1 or more .
  • the transparent buffer layer 60 may be formed by a vacuum evaporation process, since the hole mobility of the material constituting the transparent buffer layer 60 is 10 -5 cm 2 ⁇ s -1 ⁇ V -1 or more , when the above electroluminescent device 01 When working, it can improve the injection and transmission capability of holes and improve the current efficiency of the device.
  • the material constituting the transparent buffer layer 60 may be TNATA (4,4',4'-tris[2-naphthyl(phenyl)amino]triphenylamine, 4,4',4'-tris[2-naphthylbenzene Hole mobility of 10, 10, 4-phenylamine, CuPc (Copper (II) phthalocyanine, copper phthalocyanine), PETDOT (poly 3,4-ethylenedioxythiophene/polystyrene sulfonate), etc. -5 cm 2 ⁇ s -1 ⁇ V -1 organic material.
  • the transparent buffer layer 60 may have a thickness of 50-150 nm. This thickness may not only enable the transparent buffer layer 60 to have the corresponding transition transparent anode layer 40 and the functional layer 30, but also prevent the transparent anode layer 40 from being prepared. The process of the time may have an impact on the underlying functional layer 30 to ensure good performance of the device.
  • the functional layer 30 located under the transparent anode layer 40 is usually composed of a material such as an organic material or an inorganic semiconductor material, the high temperature resistance performance is poor, and a high temperature film forming process such as a conventional vapor deposition method or a sputtering method is used.
  • a transparent anode layer 40 is formed over the layer 30, and the high temperature causes damage to the properties of the layers in the functional layer 30, thereby affecting the luminescent properties of the electroluminescent device 01.
  • the transparent anode layer 40 is formed by a low temperature film forming process; wherein the film forming temperature of the low temperature film forming process is less than or equal to 100 ° C.
  • the low temperature film forming process described above includes at least one of a negative ion beam sputtering method and a low temperature chemical vapor deposition method.
  • the negative ion beam sputtering method is a new coating technology developed on the basis of vacuum evaporation technology and ionization technology.
  • the transparent anode layer 40 to be plated is exemplified by an ITO material.
  • the biggest advantage of the negative ion beam sputtering method is that the material particles to be plated (ie, the ITO material described above) are irradiated to the lining at a high speed by the electric field under the action of an electric field.
  • the bottom i.e., the functional layer 30 or the transparent buffer layer 60 described above, and preferably the substrate having the transparent buffer layer 60 as a substrate
  • the film formation has good compactness and strong adhesion to the surface of the substrate, and does not require an excessive film formation temperature. Therefore, it can be formed at a low temperature of 100 ° C or less (usually only 50 ° C).
  • the low-temperature chemical vapor deposition method is a vapor phase growth method of a thin film material, in which one or more compounds containing a constituent thin film element (ie, ITO described above) and elemental gas are introduced into a substrate (ie, the functional layer 30 described above). Or a transparent buffer layer 60, and preferably a reaction chamber having a transparent buffer layer 60 as a substrate, a process for depositing a solid film on the surface of the substrate by means of a spatial vapor phase chemical reaction at a lower temperature.
  • a constituent thin film element ie, ITO described above
  • elemental gas ie, the functional layer 30 described above.
  • a transparent buffer layer 60 and preferably a reaction chamber having a transparent buffer layer 60 as a substrate, a process for depositing a solid film on the surface of the substrate by means of a spatial vapor phase chemical reaction at a lower temperature.
  • each The devices are independently controlled by a TFT addressing, and the underlying metal cathode layer 20 of the electroluminescent device 01 needs to be connected to the drain (or source) in the TFT through a via on the passivation layer to achieve the above Each electroluminescent device is individually addressed for addressing. Since the thickness of the passivation layer is large, the depth of the via hole is also large, and the metal cathode layer 20 is composed of a simple metal and/or an alloy, and a fault is easily generated at the via hole, so that the metal cathode layer 20 and the TFT cannot be formed. Connected well, affecting the normal display of AMOLED.
  • the preparation method further comprises:
  • a transparent conductive layer 50 is formed on the base substrate 10; correspondingly, the step of subsequently forming the metal cathode layer 20 includes: forming a metal cathode layer 20 on the transparent conductive layer 50, and the transparent conductive layer 50 Contact with the metal cathode layer 20, that is, when the electroluminescent device 01 operates, the two are in an electrically connected state.
  • the transparent conductive layer 50 may be formed by a process such as magnetron sputtering or ion beam sputtering, and generally, ITO, IZO, FTO, GITO (for example, Ga 0.08 In 0.28 Sn 0.64 O 3 ), and ZITO (for example, Zn) may be used. Composition of any of 0.64 In 0.88 Sn 0.66 O 3 ).
  • the problem of the fault is less likely to occur, so that the connection of the electroluminescent device 01 and the TFT can be ensured to achieve the above-described addressing independent control.
  • the thickness of the transparent conductive layer 50 is preferably 10-20 nm, which ensures that the transparent conductive layer 50 does not generate a fault when it is connected to the TFT through the via hole on the passivation layer, and does not significantly increase the device.
  • the overall thickness is preferably 10-20 nm, which ensures that the transparent conductive layer 50 does not generate a fault when it is connected to the TFT through the via hole on the passivation layer, and does not significantly increase the device. The overall thickness.
  • forming the functional layer 30 further includes: forming an electron injection layer (EIL) 34, an electron blocking layer (EBL) 35, and a hole injection layer ( At least one of a hole injection layer (HIL) 36.
  • EIL electron injection layer
  • EBL electron blocking layer
  • HIL hole injection layer
  • forming the electron injection layer includes: forming the electron injection layer 31 after forming the metal cathode layer 20; that is, the electron injection layer 34 is formed between the metal cathode layer 20 and the electron transport layer 31, The function is to increase the efficiency of electrons excited from the metal cathode layer 20 to the electron transport layer 31; for example, the electron injection layer 34 may be composed of Liq (lithium 8-hydroxyquinolate).
  • Forming the electron blocking layer includes: forming the electron blocking layer 35 after forming the light emitting layer 32, and forming the electron blocking layer 35; that is, the electron blocking layer 35 is formed between the hole transport layer 33 and the light emitting layer 32.
  • the blocking electrons recombine across the luminescent layer 32 and the holes in the hole transport layer 33, resulting in a decrease in luminous efficiency; by way of example, electronic blocking Layer 35 may be composed of TFB (poly(9,9-phthalic acid dioctyl-indole-co-N-(4-phenyl)aniline), TAPC (1,1-bis[(di-4-toluamino)) Organic materials such as phenyl]cyclohexane) and NPB (N,N'-biphenyl-N,N'-(2-naphthalene)-(1,l'-phenyl)-4,4'-diamine) Composition.
  • TFB poly(9,9-phthalic acid diocty
  • Forming the hole injecting layer includes: forming the hole injecting layer 36 after forming the hole transporting layer 33, and forming the hole injecting layer 36; that is, the hole injecting layer 36 is formed in the transparent anode layer 40 and the hole transporting layer 33.
  • the function of the hole injection layer 33 is to be made of CuPc (copper phthalocyanine).
  • the embodiment of the invention further provides a method for preparing a display substrate, the preparation method comprising:
  • the embodiment of the invention further provides a display device comprising the above-mentioned display substrate formed.
  • the display device may be specifically a product or a component having any display function, such as an OLED panel, an OLED display, an OLED television or an electronic paper, a digital photo frame, a mobile phone, or a tablet computer.

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Abstract

一种电致发光器件及其制备方法、显示基板、显示装置，涉及显示技术领域，不需要减小金属阴极的厚度即可提高OLED器件的整体出光率，保证其良好的显示效果。该电致发光器件包括：位于衬底基板（10）上的金属阴极层（20）、功能层（30）、透明阳极层（40）；其中，透明阳极层（40）位于电致发光器件的出光侧；功能层（30）位于金属阴极层（20）和透明阳极层（40）之间，并且包括：依次远离金属阴极层（20）的电子传输层（31）、发光层（32）以及空穴传输层（33）。用于电致发光器件及包括该电致发光器件的显示基板、显示装置的制备。

Description

一种电致发光器件及其制备方法、显示基板、显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种电致发光器件及其制备方法、显示基板、显示装置。
背景技术
AM-OLED(Active Matrix-Organic Light-Emitting Display，有源矩阵式有机电致发光显示器)显示器中的OLED器件的发光方式主要为从阴极一侧出光；如图1所示，阳极040与阴极020分别位于功能层030的两侧；当在阳极040与阴极020上施加大于某一阈值的外加电场后，空穴、电子分别从阳极040、阴极020注入到功能层030中的发光层后发生辐射复合而导致发光；如图中箭头方式所示，光线从位于上方的阴极020一侧射出，从而实现显示。
然而，由于阴极通常采用低功函数(work function)的金属单质和/或合金材料，其光透过率较低；为了减小阴极对OLED器件整体出光率的影响，需要将阴极的厚度制作得较薄。但是当阴极厚度较小时，其面电阻Rs(Rs＝ρ/t，ρ为电阻率，t为厚度)会显著增加，导致OLED器件的驱动电压升高，能耗变大。
发明内容
本发明的实施例提供一种电致发光器件及其制备方法、显示基板、显示装置，不需要减小金属阴极的厚度即可提高OLED器件的整体出光率，保证其良好的显示效果。
为达到上述目的，本发明的实施例采用如下技术方案：
一方面、本发明实施例提供了一种电致发光器件，所述电致发光器件包括：位于衬底基板上的金属阴极层、功能层、透明阳极层；其中，所述透明阳极层位于所述电致发光器件的出光侧；所述功能层位于所述金属阴极层和透明阳极层之间，并且包括：依次远离所述金属阴极层的电子传输层、发光层以及空穴传输层。
优选的，所述电致发光器件还包括：位于所述衬底基板与所述金属阴极层之间的透明导电层，且所述透明导电层与所述金属阴极层相接触。
进一步优选的，所述透明导电层由铟锡氧化物、铟锌氧化物、氟 掺杂锡氧化物、镓铟锡氧化物、以及锌铟锡氧化物中的任一种材料构成。
进一步优选的，所述透明导电层的厚度为10-20nm。
优选的，所述电致发光器件还包括：位于所述功能层与所述透明阳极层之间的透明缓冲层；其中，构成所述透明缓冲层材料的空穴迁移率大于等于10-5cm2·s-1·v-1。
进一步优选的，所述透明缓冲层的厚度为50-150nm。
在上述基础上优选的，所述金属阴极层的厚度为20-100nm。
在上述基础上优选的，所述功能层还包括：电子注入层、电子阻挡层以及空穴注入层中的至少一种；其中，所述电子注入层位于所述金属阴极层与所述电子传输层之间；所述电子阻挡层位于所述发光层与所述空穴传输层之间；所述空穴注入层位于所述空穴传输层与所述透明阳极层之间。
本发明实施例还提供了一种电致发光器件的制备方法，所述制备方法包括：在衬底基板上形成金属阴极层、功能层、透明阳极层；其中，形成的所述透明阳极层位于所述电致发光器件的出光侧；形成的所述功能层位于所述金属阴极层和透明阳极层之间，并且包括：依次远离所述金属阴极层的电子传输层、发光层以及空穴传输层。
优选的，形成所述功能层之后，且形成所述透明阳极层之前，所述制备方法还包括：在形成的所述功能层上形成透明缓冲层；其中，构成所述透明缓冲层材料的空穴迁移率大于等于10-5cm2·s-1·V-1。
进一步优选的，形成的所述透明缓冲层的厚度为50-150nm。
在上述基础上优选的，所述透明阳极层采用低温成膜工艺形成；其中，所述低温成膜工艺的成膜温度小于等于100℃。
优选的，所述低温成膜工艺包括：负离子束溅镀法、低温化学气相沉积法中的至少一种。
进一步优选的，形成所述金属阴极层之前，所述制备方法还包括：在所述衬底基板上形成透明导电层；形成所述金属阴极层包括：在所述透明导电层上形成所述金属阴极层，且所述透明导电层与所述金属阴极层相接触。
优选的，形成所述功能层还包括：形成电子注入层、电子阻挡层以及空穴注入层中的至少一种；其中，形成电子注入层包括：形成所 述金属阴极层之后，且形成所述电子传输层之前，形成所述电子注入层；形成电子阻挡层包括：形成所述发光层之后，且形成空穴传输层之前，形成所述电子阻挡层；形成空穴注入层包括：形成所述空穴传输层之后，且形成所述透明阳极层之前，形成所述空穴注入层。
另一方面、本发明实施例还提供了一种显示基板，所述显示基板包括位于衬底基板上的上述任一项所述的电致发光器件。
本发明实施例还提供一种显示基板的制备方法，所述制备方法包括：在衬底基板上形成电致发光器件的步骤；其中，所述电致发光器件采用上述任一项所述的制备方法。
再一方面、本发明实施例还提供了一种显示装置，所述显示装置包括上述的所述的显示基板。
通过本发明实施例提供的一种电致发光器件及其制备方法、显示基板、显示装置，在上述电致发光器件，由于从功能层中激发出的光线从透明阳极层一侧射出，避免了光透过率较低的金属单质和/或合金对光线的阻碍，使得电致发光器件的整体出光率较高，保证其良好的显示效果；同时，由于透过率较低的金属阴极层不作为出光侧，因此可以将金属阴极层的厚度制作得较厚，从而减小了金属阴极层的面电阻，降低了器件的驱动电压，避免增加能耗。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术提供的一种OLED器件的剖面结构示意图；
图2为现有技术提供的一种OLED器件中光线产生微腔效应的示意图；
图3为本发明实施例提供的一种电致发光器件的剖面结构示意图一；
图4为本发明实施例提供的一种电致发光器件的剖面结构示意图二；
图5为本发明实施例提供的一种电致发光器件的剖面结构示意图 三；
图6为本发明实施例提供的一种电致发光器件的剖面结构示意图四。
附图标记：
01-电致发光器件；10-衬底基板；20-金属阴极层；30-功能层；31-电子传输层；32-发光层；33-空穴传输层；34-电子注入层；35-电子阻挡层；36-空穴注入层；40-透明阳极层；50-透明导电层；60-透明缓冲层。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
需要指出的是，除非另有定义，本发明实施例中所使用的所有术语(包括技术和科学术语)具有与本发明所属领域的普通技术人员共同理解的相同含义。还应当理解，诸如在通常字典里定义的那些术语应当被解释为具有与它们在相关技术的上下文中的含义相一致的含义，而不应用理想化或极度形式化的意义来解释，除非这里明确地这样定义。
并且，本发明专利申请说明书以及权利要求书中所使用的术语“上”、“下”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
本发明实施例提供了一种电致发光器件01，如图3所示，该电致发光器件01包括：位于衬底基板10上的金属阴极层20、功能层30、透明阳极层40；其中，透明阳极层40位于该电致发光器件01的出光侧；该功能层30位于所述金属阴极层20和透明阳极层40之间，并且包括：依次远离金属阴极层20的电子传输层31(electron transport layer，简称ETL)、发光层32(emitting layer，简称EL)以及空穴传输层33(hole transport layer，简称HTL)。
需要说明的是，第一、形成有上述的电致发光器件01的衬底基板10例如还可以预先形成有TFT阵列等结构，具体不作限定。
透明阳极层40位于该电致发光器件01的出光侧，即参考图3所示，该电致发光器件01的发光方式为顶发光；当然，该电致发光器件01的发光方式也可为底发光。这里，形成的上述电致发光器件01例如可以为OLED器件。
这里，考虑到上述的电致发光器件01应用于显示装置，如AM-OLED中时，各个器件与阵列基板中的TFT(Thin Film Transistor，薄膜晶体管)相连，通过对应的TFT寻址独立控制，从而对各像素独立进行选择性调节，易于OLED彩色化的实现；而由于阵列基板上呈阵列排布的TFT以及与TFT相连的栅线、数据线等信号线不透光，因此，本发明实施例优选的，以参考图3所示的发光方式为例，即该电致发光器件01的发光方式为顶发光，从而使电子-空穴复合发出的光尽量有效地发射出以实现显示。当然，本发明实施例提供的上述电致发光器件01的结构也可以用于底发射，从而提高现有技术中底发射器件的出光率，其与顶发射型的器件的区别在于相对于阵列基板的设置位置，在此不再赘述。
第二、金属阴极层20可以采用Mg、Ag、Al、Li、K以及Ca中的至少一种金属材料构成。即，可以为上述金属元素的单质，也可为由两种或两种以上的上述金属元素构成的金属合金，如MgxAg(1-x)、或LixAl(1-x)、或LixCa(1-x)、或LixAg(1-x)，其中0＜x＜1。
透明阳极层40可以采用铟锡氧化物(Indium Tin Oxide，简称为ITO)、铟锌氧化物(Indium Zinc Oxide，简称为IZO)、氟掺杂锡氧化物(Fluorine-Doped Tin Oxide，简称为FTO)、镓铟锡氧化物(Gallium Indium Tin Oxide，简称为GITO，其具体化学式例如可以为Ga0.08In0.28Sn0.64O3)、以及锌铟锡氧化物(Zinc Indium Tin Oxide，简称为ZITO，其具体化学式例如可以为Zn0.64In0.88Sn0.66O3)中的任一种材料构成。
这里，上述的透明导电材料的功函数均大于5eV，有利于空穴的充分激发，以提高电流。
透明阳极层40的厚度可以为10-100nm，这一厚度范围可以使得透明阳极层40的光透过率较高，同时不会出现由于厚度过小而导致阳极 面电阻过大的问题。
第三、示例的，ETL可由寡聚噻吩衍生物、三唑衍生物、喹喔啉衍生物、全氟代的芳香化合物等构成；EL可由Alq3(8-羟基喹啉铝)及其衍生物构成；HTL可由三苯胺衍生物和一些高分子聚合物构成，具体不作限定。
基于此，通过本发明实施例提供的上述电致发光器件01，由于光透过率较低的金属阴极层20不作为出光侧，而透明阳极层40作为出光侧，从功能层30中激发出的光线从透明阳极层40一侧射出，避免了光透过率较低的金属单质和/或合金对光线的阻碍，使得电致发光器件01的整体出光率较高。
参考图1所示，由于现有技术中通常采用阴极作为出光侧，阴极相当于具有反射功能的半透明薄膜，进一步如图2所示，阴极与位于阳极下方的金属反射层050之间将形成了一个微腔，将产生微腔效应，微腔腔长L与OLED器件发出的光的波长λ存在如下关系：
Figure PCTCN2015093961-appb-000001
Figure PCTCN2015093961-appb-000002
其中，ni为功能层中各层的有机物折射率；di为功能层中各有机层膜厚；
Figure PCTCN2015093961-appb-000003
为光进入金属膜层的深度；k为各有机层的消光系数；ns为各有机膜层的折射率；km为金属膜层的消光系数；nm为金属膜层的折射率；m为正整数。
由于微腔对光波具有选择性，即具有特定腔长的OLED器件只能发出特定波长的光。在不同观察视角下，器件的实际腔长会发生变化：如图2所示，观察者位于OLED器件的正前方时的腔长L与斜视的腔长L1、L2均不同，将导致不同观察视角下观察者看到的OLED器件发出的光的波长λ发生改变，从而使得OLED器件存在视角缺陷，造成显示不良。
而本发明实施例提供的上述电致发光器件01中，由于作为出光侧的透明阳极层40通常是由透过率很高的ITO、IZO等材料构成，透明阳极层40与金属阴极层20之间不会产生微腔效应，从而避免了电致发光器件由于金属阴极层20在上产生微腔效应而导致的器件产生视角 缺陷，保证其良好的显示效果。
并且，上述形成的电致发光器件01的发光方式为从透明阳极层40一侧发光，以图3所示的顶发光方式为例，电子-空穴辐射复合而发出的光一部分会从顶部的透明阳极层40一侧射出，另一部分会射向底部，因此可以将金属阴极层20的厚度制作得较厚，从而起到现有技术中反射金属层的作用，即，向下射出的光线经金属阴极层20的反射后，再次向上从透明阳极层40一侧射出，从而进一步提高了器件的出光率；进一步的，由于不透明的金属阴极层20在作为上述电致发光器件01的阴极的同时还可以起到反射金属层的作用，因此其厚度可以制作得较大，例如可以为20-100nm，从而减小了金属阴极层20的面电阻，降低了器件的驱动电压，避免增加能耗。
由于上述形成的电致发光器件01通常应用于AMOLED，即每个器件都由一个TFT寻址独立控制，而电致发光器件01中位于下方的金属阴极层20需要通过钝化层上的过孔与TFT中的漏极(或源极)相连，以实现对上述的每个电致发光器件寻址独立控制。由于钝化层的厚度较大，因此过孔的深度也较大，而金属阴极层20是由金属单质和/或合金构成的，在过孔处容易发生断层，导致金属阴极层20与TFT不能很好地相连，影响AMOLED的正常显示。
因此，进一步的，如图4所示，该电致发光器件01还包括：位于衬底基板10与金属阴极层20之间的透明导电层50，且透明导电层50与金属阴极层20相接触，即当上述的电致发光器件工作时，二者处于电连接状态。
这里，透明导电层50通常可采用ITO、IZO、FTO、GITO(如Ga0.08In0.28Sn0.64O3)、以及ZITO(如Zn0.64In0.88Sn0.66O3)中的任一种材料构成。
上述的透明导电材料沉积在过孔处时不易产生断层问题，从而可以保证电致发光器件01与TFT的连接，以实现上述的寻址独立控制。
其中，透明导电层50的厚度优选为10-20nm，这一厚度可以保证透明导电层50在通过钝化层上的过孔与TFT相连时不会产生断层，同时，也不会显著地增加器件的整体厚度。
进一步的，如图5所示，该电致发光器件01还包括：位于功能层30与透明阳极层40之间的透明缓冲层60；其中，构成透明缓冲层60 材料的空穴迁移率大于等于10-5cm2·s-1·V-1。
这里，由于构成透明缓冲层60的材料的空穴迁移率大于等于10-5cm2·s-1·v-1，当上述电致发光器件01工作时，可以改善空穴的注入与传输能力，提高器件的电流效率。
示例的，构成上述透明缓冲层60的材料可以为TNATA(4，4′，4′-tris[2-naphthyl(phenyl)amino]triphenylamine，4，4′，4′-三[2-萘基苯基氨基]三苯基胺)、CuPc(Copper(II)phthalocyanine，酞菁铜)、PETDOT(聚3，4-乙撑二氧噻吩/聚苯乙烯磺酸盐)等空穴迁移率大于等于10-5cm2·s-1·V-1的有机材料。
进一步的，透明缓冲层60的厚度可以为50-150nm，这一厚度不但可以使透明缓冲层60具有相应的过渡透明阳极层40与功能层30的作用，还可以防止制备透明阳极层40时的工艺条件，如温度、反应源等因素对下方的功能层30可能产生的影响，保证器件的良好性能。
在上述基础上，如图6所示，该功能层30还可以包括：
电子注入层(electron injection layer，简称EIL)34、电子阻挡层(electron blocking layer，简称EBL)35以及空穴注入层(hole injection layer，简称HIL)36中的至少一种。
其中，电子注入层34位于金属阴极层20与电子传输层31之间，其作用是提高从金属阴极层20激发出的电子向电子传输层31注入的效率；示例的，电子注入层34可以由Liq(8-羟基喹啉锂)构成。
电子阻挡层35位于空穴传输层33与发光层32之间，其作用是阻挡电子越过发光层32与空穴传输层33中的空穴发生辐射复合，从而导致发光效率降低；示例的，电子阻挡层35可以由TFB(聚(9，9-邻苯二甲酸二辛-芴-co-N-(4-苯基)苯胺)、TAPC(1，1-双[(二-4-甲苯氨基)苯基]环己烷)、NPB(N，N′-联苯-N，N′-(2-萘)-(1，l′-苯基)-4，4′-二胺)等有机材料构成。
空穴注入层36位于透明阳极层40与空穴传输层33之间，其作用是提高从透明阳极层40激发出的空穴向空穴传输层33注入的效率；示例的，空穴注入层36可以由CuPc(酞菁铜，Copper(II)phthalocyanine)构成。
需要说明的是，为了清楚起见，图6仅以功能层30包括有上述的HTL、EL、ETL、HIL、EBL以及EIL这6种结构层为例进行说明。
并且，图6中仅以上述电致发光器件01包括有透明缓冲层60为例进行说明，在此情况下，空穴注入层36位于空穴传输层33与透明阳极层40下方的透明缓冲层60之间；
当上述电致发光器件01不包括有透明缓冲层60时，空穴注入层36即位于空穴传输层33与透明阳极层40之间。
这里，HTL、EL以及ETL这三层为实现电致发光所必须的结构层；HIL、EBL以及EIL这三层为实现进一步提高发光效率所需的结构层，除上述HTL、EL以及ETL这三层外，功能层30可仅包括HIL、EBL以及EIL这三层中的至少一层，具体不作限定。
本发明实施例还提供了一种显示基板，该显示基板包括位于衬底基板10上的上述电致发光器件01。
这里，该衬底基板10例如可以为形成有TFT阵列的阵列基板。
本发明实施例还提供了一种上述的电致发光器件01的制备方法，该制备方法包括：
参考图3所示，在衬底基板10上形成金属阴极层20、功能层30、透明阳极层40；其中，形成的透明阳极层40位于该电致发光器件0l的出光侧，即光从该透明阳极层40一侧射出；形成的功能层30位于所述金属阴极层20和透明阳极层40之间，并且包括：依次远离金属阴极层20的电子传输层31、发光层32以及空穴传输层33。
需要说明的是，第一、上述的在衬底基板10上形成金属阴极层20、功能层30、透明阳极层40，可以是依次形成金属阴极层20、功能层30、透明阳极层40，即，形成的电致发光器件01的发光方式为顶发光；或者，上述步骤也可以为依次形成透明阳极层40、功能层30、金属阴极层20，即形成的电致发光器件01的发光方式为底发光。
这里，考虑到采用上述制备方法形成的电致发光器件01应用于显示装置，如AM-OLED中时，各个器件与阵列基板中的TFT相连，通过对应的TFT寻址独立控制，从而对各像素独立进行选择性调节，易于OLED彩色化的实现；而由于阵列基板上呈阵列排布的TFT以及与TFT相连的栅线、数据线等信号线不透光，因此，本发明实施例优选的，以参考图3所示的发光方式为例，即形成的该电致发光器件01的发光方式为顶发光，从而使电子-空穴复合发出的光尽量有效地发射出以实现显示。当然，采用上述制备方法形成的电致发光器件01的结构 也可以用于底发射，从而提高现有技术中底发射器件的出光率，其与顶发射型的器件的区别在于相对于阵列基板的设置位置，在此不再赘述。
第二，金属阴极层20例如可以采用真空蒸镀、磁控溅射或离子束溅射等工艺形成；功能层30中的各层可以采用真空蒸镀工艺形成。
通过本发明实施例形成的上述电致发光器件01，由于光透过率较低的金属阴极层20不作为出光侧，而透明阳极层40作为器件的出光侧，从功能层30中激发出的光线从透明阳极层40一侧射出，避免了光透过率较低的金属单质和/或合金对光线的阻碍，使得电致发光器件01的整体出光率较高；同时，由于透明阳极层40通常是由透过率很高的ITO、IZO等材料构成，透明阳极层40与金属阴极层20之间不会产生微腔效应，避免了电致发光器件由于金属阴极层20在上产生微腔效应而导致的器件产生视角缺陷，保证其良好的显示效果。
并且，上述形成的电致发光器件01的发光方式为从透明阳极层40一侧发光，电子-空穴辐射复合而发出的光一部分会从的透明阳极层40一侧射出，另一部分会射向另一侧，因此可以将金属阴极层20的厚度制作得较厚，从而起到现有技术中反射金属层的作用，即，参考图3所示，向下射出的光线经金属阴极层20的反射后，再次向上从透明阳极层40一侧射出，从而进一步提高了器件的出光率；进一步的，由于不透明的金属阴极层20在作为上述电致发光器件01的阴极的同时还可以起到反射金属层的作用，因此其厚度可以制作得较大，例如可以为20-100nm，从而减小了金属阴极层20的面电阻，降低了器件的驱动电压，避免增加能耗。
进一步的，形成功能层30之后，且形成透明阳极层40之前，该制备方法还包括：
参考图5所示，在形成的功能层30上形成透明缓冲层60；其中，构成透明缓冲层60材料的空穴迁移率大于等于10-5cm2·s-1·V-1。
这里，透明缓冲层60可以采用真空蒸镀工艺形成，由于构成透明缓冲层60的材料的空穴迁移率大于等于10-5cm2·s-1·V-1，当上述电致发光器件01工作时，可以改善空穴的注入与传输能力，提高器件的电流效率。
示例的，构成上述透明缓冲层60的材料可以为TNATA (4，4′，4′-tris[2-naphthyl(phenyl)amino]triphenylamine，4，4′，4′-三[2-萘基苯基氨基]三苯基胺)、CuPc(Copper(II)phthalocyanine，酞菁铜)、PETDOT(聚3，4-乙撑二氧噻吩/聚苯乙烯磺酸盐)等空穴迁移率大于等于10-5cm2·s-1·V-1的有机材料。
进一步的，透明缓冲层60的厚度可以为50-150nm，这一厚度可以不但可以使透明缓冲层60具有相应的过渡透明阳极层40与功能层30的作用，还可以防止在制备透明阳极层40时的工艺对下方的功能层30可能产生的影响，保证器件的良好性能。
这里，由于位于透明阳极层40下方的功能层30通常由有机材料或无机半导体材料等材料构成，耐高温的性能较差，如果采用传统的蒸镀法、溅射法等高温成膜工艺在功能层30上方形成透明阳极层40，高温会对功能层30中的各层性能造成破坏，从而影响电致发光器件01的发光性能。
因此，本发明实施例进一步优选的，透明阳极层40采用低温成膜工艺形成；其中，低温成膜工艺的成膜温度小于等于100℃。
进一步的，上述的低温成膜工艺包括：负离子束溅镀法、低温化学气相沉积法中的至少一种。
其中，负离子束溅镀法是一种在真空蒸镀技术与电离技术基础上发展而来的新型镀膜技术。
这里，以待镀的透明阳极层40由ITO材料构成为例，负离子束溅镀法的最大优点是待镀的材料粒子(即上述的ITO材料)以负离子的形成在电场作用下高速射向衬底(即上述的功能层30或透明缓冲层60，并优选为以透明缓冲层60为衬底)表面，由于负离子束受到电场的加速作用，其携带的动能很高、且化学活性高，ITO成膜致密性好、与衬底表面的结合力强，不需要过高的成膜温度，因此可以在小于等于100℃(通常仅需50℃即可)的低温下成膜。
低温化学气相沉积法是一种薄膜材料的气相生长方法，是将一种或几种含有构成薄膜元素(即上述的ITO)的化合物、单质气体通入放置有衬底(即上述的功能层30或透明缓冲层60，并优选为以透明缓冲层60为衬底)的反应室，在较低温度下借助空间气相化学反应在衬底表面上沉积固态薄膜的工艺技术。
由于上述形成的电致发光器件01通常应用于AMOLED，即每个 器件都由一个TFT寻址独立控制，而电致发光器件01中位于下方的金属阴极层20需要通过钝化层上的过孔与TFT中的漏极(或源极)相连，以实现对上述的每个电致发光器件寻址独立控制。由于钝化层的厚度较大，因此过孔的深度也较大，而金属阴极层20是由金属单质和/或合金构成的，在过孔处容易发生断层，导致金属阴极层20与TFT不能很好地相连，影响AMOLED的正常显示。
因此，进一步的，形成金属阴极层20之前，该制备方法还包括：
参考图4所示，在衬底基板10上形成透明导电层50；相应的，后续形成上述金属阴极层20的步骤包括：在该透明导电层50上形成金属阴极层20，且透明导电层50与金属阴极层20相接触，即当该电致发光器件01工作时，二者处于电连接状态。
这里，透明导电层50可以采用磁控溅射或离子束溅射等工艺形成，通常可采用ITO、IZO、FTO、GITO(例如为Ga0.08In0.28Sn0.64O3)、以及ZITO(例如为Zn0.64In0.88Sn0.66O3)中的任一种材料构成。
上述的透明导电材料沉积在过孔处时不易产生断层问题，从而可以保证电致发光器件01与TFT的连接，以实现上述的寻址独立控制。
其中，透明导电层50的厚度优选为10-20nm，这一厚度可以保证透明导电层50在通过钝化层上的过孔与TFT相连时不会产生断层，同时，也不会显著地增加器件的整体厚度。
在上述基础上，参考图6所示，形成功能层30还包括：形成电子注入层(electron injection layer，简称EIL)34、电子阻挡层(electron blocking layer，简称EBL)35以及空穴注入层(hole injection layer，简称HIL)36中的至少一种。
其中，形成电子注入层包括：形成金属阴极层20之后，且形成电子传输层31之前，形成电子注入层34；即，电子注入层34形成于金属阴极层20与电子传输层31之间，其作用是提高从金属阴极层20激发出的电子向电子传输层31注入的效率；示例的，电子注入层34可以由Liq(8-羟基喹啉锂)构成。
形成电子阻挡层包括：形成发光层32之后，且形成空穴传输层33之前，形成电子阻挡层35；即，电子阻挡层35形成于空穴传输层33与发光层32之间，其作用是阻挡电子越过发光层32与空穴传输层33中的空穴发生辐射复合，从而导致发光效率降低；示例的，电子阻挡 层35可以由TFB(聚(9，9-邻苯二甲酸二辛-芴-co-N-(4-苯基)苯胺)、TAPC(1，1-双[(二-4-甲苯氨基)苯基]环己烷)、NPB(N，N′-联苯-N，N′-(2-萘)-(1，l′-苯基)-4，4′-二胺)等有机材料构成。
形成空穴注入层包括：形成空穴传输层33之后，且形成透明阳极层40之前，形成空穴注入层36；即，空穴注入层36形成于透明阳极层40与空穴传输层33之间，其作用是提高从透明阳极层40激发出的空穴向空穴传输层33注入的效率；示例的，空穴注入层36可以由CuPc(酞菁铜，Copper(II)phthalocyanine)构成。
本发明实施例还提供了一种显示基板的制备方法，该制备方法包括：
在衬底基板10上形成上述电致发光器件01的步骤，该衬底基板10例如可以为形成有TFT阵列的阵列基板。
本发明实施例还提供了一种显示装置，该显示装置包括形成的上述的显示基板。
上述显示装置具体可以是OLED面板、OLED显示器、OLED电视或电子纸、数码相框、手机、平板电脑等具有任何显示功能的产品或者部件。
需要说明的是，本发明所有附图是上述电致发光器件及其制备方法的简略的示意图，只为清楚描述本方案体现了与发明点相关的结构，对于其他的与发明点无关的结构是现有结构，在附图中并未体现或只体现部分。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (18)

  1. 一种电致发光器件，其特征在于，所述电致发光器件包括：位于衬底基板上的金属阴极层、功能层、透明阳极层；
    其中，所述透明阳极层位于所述电致发光器件的出光侧；
    所述功能层位于所述金属阴极层和透明阳极层之间，并且包括：依次远离所述金属阴极层的电子传输层、发光层以及空穴传输层。
  2. 根据权利要求1所述的电致发光器件，其特征在于，所述电致发光器件还包括：
    位于所述衬底基板与所述金属阴极层之间的透明导电层，且所述透明导电层与所述金属阴极层相接触。
  3. 根据权利要求2所述的电致发光器件，其特征在于，所述透明导电层由铟锡氧化物、铟锌氧化物、氟掺杂锡氧化物、镓铟锡氧化物、以及锌铟锡氧化物中的任一种材料构成。
  4. 根据权利要求2所述的电致发光器件，其特征在于，所述透明导电层的厚度为10-20nm。
  5. 根据权利要求1所述的电致发光器件，其特征在于，所述电致发光器件还包括：
    位于所述功能层与所述透明阳极层之间的透明缓冲层；
    其中，构成所述透明缓冲层材料的空穴迁移率大于等于10-5cm2·s-1·V-1。
  6. 根据权利要求5所述的电致发光器件，其特征在于，所述透明缓冲层的厚度为50-150nm。
  7. 根据权利要求1至6任一项所述的电致发光器件，其特征在于，
    所述金属阴极层的厚度为20-100nm。
  8. 根据权利要求1至6任一项所述的电致发光器件，其特征在于，所述功能层还包括：
    电子注入层、电子阻挡层以及空穴注入层中的至少一种；其中，
    所述电子注入层位于所述金属阴极层与所述电子传输层之间；
    所述电子阻挡层位于所述发光层与所述空穴传输层之间；
    所述空穴注入层位于所述空穴传输层与所述透明阳极层之间。
  9. 一种电致发光器件的制备方法，其特征在于，所述制备方法包 括：
    在衬底基板上形成金属阴极层、功能层、透明阳极层；
    其中，形成的所述透明阳极层位于所述电致发光器件的出光侧；
    形成的所述功能层位于所述金属阴极层和透明阳极层之间，并且包括：依次远离所述金属阴极层的电子传输层、发光层以及空穴传输层。
  10. 根据权利要求9所述的制备方法，其特征在于，形成所述功能层之后，且形成所述透明阳极层之前，所述制备方法还包括：
    在形成的所述功能层上形成透明缓冲层；
    其中，构成所述透明缓冲层材料的空穴迁移率大于等于10-5cm2·s-1·V-1。
  11. 根据权利要求10所述的制备方法，其特征在于，形成的所述透明缓冲层的厚度为50-150nm。
  12. 根据权利要求9至11任一项所述的制备方法，其特征在于，所述透明阳极层采用低温成膜工艺形成；其中，所述低温成膜工艺的成膜温度小于等于100℃。
  13. 根据权利要求12所述的制备方法，其特征在于，所述低温成膜工艺包括：负离子束溅镀法、低温化学气相沉积法中的至少一种。
  14. 根据权利要求9所述的制备方法，其特征在于，形成所述金属阴极层之前，所述制备方法还包括：
    在所述衬底基板上形成透明导电层；
    形成所述金属阴极层包括：在所述透明导电层上形成所述金属阴极层，且所述透明导电层与所述金属阴极层相接触。
  15. 根据权利要求9所述的制备方法，其特征在于，形成所述功能层还包括：
    形成电子注入层、电子阻挡层以及空穴注入层中的至少一种；其中，
    形成电子注入层包括：形成所述金属阴极层之后，且形成所述电子传输层之前，形成所述电子注入层；
    形成电子阻挡层包括：形成所述发光层之后，且形成空穴传输层之前，形成所述电子阻挡层；
    形成空穴注入层包括：形成所述空穴传输层之后，且形成所述透 明阳极层之前，形成所述空穴注入层。
  16. 一种显示基板，其特征在于，所述显示基板包括位于衬底基板上的如权利要求1至8任一项所述的电致发光器件。
  17. 一种显示基板的制备方法，其特征在于，所述制备方法包括：在衬底基板上形成电致发光器件的步骤；其中，所述电致发光器件采用上述权利要求9至15任一项所述的制备方法。
  18. 一种显示装置，其特征在于，所述显示装置包括如权利要求16所述的显示基板。
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