WO2016187897A1 - 量子点发光元件 - Google Patents

量子点发光元件 Download PDF

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Publication number
WO2016187897A1
WO2016187897A1 PCT/CN2015/080878 CN2015080878W WO2016187897A1 WO 2016187897 A1 WO2016187897 A1 WO 2016187897A1 CN 2015080878 W CN2015080878 W CN 2015080878W WO 2016187897 A1 WO2016187897 A1 WO 2016187897A1
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Prior art keywords
light
emitting unit
quantum dot
emitting
layer
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English (en)
French (fr)
Inventor
赵锋
曹进
张雪
周洁
谢婧薇
张建华
吴欲志
邱钟毅
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/759,196 priority Critical patent/US9893308B2/en
Publication of WO2016187897A1 publication Critical patent/WO2016187897A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to the field of light emitting devices, and in particular to a quantum dot light emitting device.
  • Quantum Dots are tiny semiconductor nanocrystals that are invisible to the naked eye and are particles with a particle size of less than 10 nanometers. Quantum dots have a distinctive property: every time they are stimulated by light or electricity, quantum dots emit colored light. The color of the light is determined by the composition and size of the quantum dots. This feature allows the quantum dots to change the light source. The color of the light emitted.
  • the use of quantum dot technology to emit white light is mainly obtained by mixing RGB (red, green and blue) three primary colors.
  • RGB red, green and blue
  • the traditional is to mix blue quantum dots, red quantum dots, or green quantum dots.
  • the light emitted by the blue quantum dots is absorbed by the green and red quantum dots around it, thus consuming some blue light.
  • the white light index issued does not meet the requirements.
  • the technical problem to be solved by the present invention is to provide a quantum dot light-emitting element capable of saving quantum dot materials and emitting relatively pure white light.
  • a technical solution adopted by the present invention is to provide a quantum dot light-emitting element, wherein the quantum dot light-emitting element comprises a quantum dot light-emitting layer and a main structure layer disposed on upper and lower sides of the quantum dot light-emitting layer, and quantum The dot light emitting layer includes a red light emitting unit, a green light emitting unit, and a blue light emitting unit, the red light emitting unit includes a red quantum dot, the green light emitting unit includes a green quantum dot, and the blue light emitting unit includes a blue quantum dot, and the blue quantum dot is more than The green quantum dot has more green quantum dots than the red quantum dots, wherein the main structural layer comprises: a substrate, an anode, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer and a cathode, an anode, a hole injection layer, The hole transport layer, the quantum dot light-emitting
  • the quantum dot light emitting layer is rectangular and the blue light emitting unit is disposed between the red light emitting unit and the green light emitting unit.
  • the red light emitting unit, the blue light emitting unit, and the green light emitting unit are sequentially distributed along a diagonal direction of the rectangular quantum dot light emitting layer.
  • the area ratio of the blue light-emitting unit, the green light-emitting unit, and the red light-emitting unit is (10 to 14): (6 to 9):1.
  • the red light emitting unit, the green light emitting unit, and the blue light emitting unit are sequentially stacked.
  • the volume ratio of the blue light-emitting unit, the green light-emitting unit, and the red light-emitting unit is (10 to 14): (6 to 9):1.
  • the quantum dot light emitting layer is circular, the blue light emitting unit and the green light emitting unit are respectively circular, the red light emitting unit is circular in the center of the quantum dot light emitting layer, and the green light emitting unit is located in the red light emitting unit and the blue light emitting unit. between.
  • the ratio of the radius of the blue light-emitting unit, the green light-emitting unit, and the red light-emitting unit is (10 to 14): (6 to 9):1.
  • a technical solution adopted by the present invention is to provide a quantum dot light-emitting element comprising a quantum dot light-emitting layer and a main structure layer disposed on the upper and lower sides of the quantum dot light-emitting layer, and the quantum dot light emitting
  • the layer includes a red light emitting unit, a green light emitting unit and a blue light emitting unit, the red light emitting unit includes a red quantum dot, the green light emitting unit includes a green quantum dot, the blue light emitting unit includes a blue quantum dot, and the blue quantum dot is more than the green quantum Point, green quantum dots are more than red quantum dots.
  • the quantum dot light emitting layer is rectangular and the blue light emitting unit is disposed between the red light emitting unit and the green light emitting unit.
  • the red light emitting unit, the blue light emitting unit, and the green light emitting unit are sequentially distributed along a diagonal direction of the rectangular quantum dot light emitting layer.
  • the area ratio of the blue light-emitting unit, the green light-emitting unit, and the red light-emitting unit is (10 to 14): (6 to 9):1.
  • the red light emitting unit, the green light emitting unit, and the blue light emitting unit are sequentially stacked.
  • the volume ratio of the blue light-emitting unit, the green light-emitting unit, and the red light-emitting unit is (10 to 14): (6 to 9):1.
  • the quantum dot light emitting layer is circular, the blue light emitting unit and the green light emitting unit are respectively circular, the red light emitting unit is circular in the center of the quantum dot light emitting layer, and the green light emitting unit is located in the red light emitting unit and the blue light emitting unit. between.
  • the ratio of the radius of the blue light-emitting unit, the green light-emitting unit, and the red light-emitting unit is (10 to 14): (6 to 9):1.
  • a quantum dot light-emitting element including a quantum dot light-emitting layer and a main structure layer disposed on the upper and lower sides of the quantum dot light-emitting layer, and quantum dots.
  • the light emitting layer includes a red light emitting unit, a green light emitting unit, and a blue light emitting unit, the red light emitting unit includes a red quantum dot, the green light emitting unit includes a green quantum dot, the blue light emitting unit includes a blue quantum dot, and the luminous flux generated by the blue quantum dot
  • the luminous flux generated by the green quantum dots is larger than the luminous flux generated by the red quantum dots.
  • blue quantum dots are more than green quantum dots, and green quantum dots are more than red quantum dots.
  • the invention has the beneficial effects that the invention can offset the blue by setting blue quantum dots more than green quantum dots, green quantum dots more than red quantum dots, and adopting successively reduced blue quantum dots and green quantum dots, ie, red quantum dots.
  • the light emitted by the color light-emitting unit is partially absorbed by the red light-emitting unit and the green light-emitting unit, and the blue light is consumed by the red light-emitting unit, thereby canceling the consumption of the green light caused by the light emitted by the green light-emitting unit.
  • the light emitted by the mixed blue light-emitting unit, the red light-emitting unit, and the green light-emitting unit emits soft white light, that is, white light having a better index, thereby saving quantum dot material and emitting relatively pure white light.
  • FIG. 1 is a schematic structural view of a quantum dot light-emitting device of the present invention
  • FIG. 2 is a schematic structural view of a quantum dot light-emitting layer of a quantum dot light-emitting device according to a first embodiment of the present invention
  • FIG. 3 is a schematic structural view of a quantum dot light-emitting layer of a quantum dot light-emitting device according to a second embodiment of the present invention.
  • Fig. 4 is a view showing the structure of a quantum dot light-emitting layer of a quantum dot light-emitting device according to a third embodiment of the present invention.
  • FIG. 1 is a schematic structural view of a quantum dot light-emitting device of the present invention.
  • the quantum dot light-emitting element includes a quantum dot light-emitting layer 11 and a main structural layer (not labeled) disposed on the upper and lower sides of the quantum dot light-emitting layer 11.
  • the quantum dot light emitting element is a white light QLED (Quantum Dots LED) element.
  • the main structure layer includes a substrate 12, an anode 13, a hole injection layer 14, a hole transport layer 15, an electron transport layer 16, an electron injection layer 17, and a cathode 18, an anode 13, a hole injection layer 14, and a hole transport layer 15.
  • the quantum dot light-emitting layer 11, the electron transport layer 16, the electron injection layer 17, and the cathode 18 are sequentially stacked on the substrate 12.
  • the body structure layer may further include: a hole blocking layer 19 disposed between the hole transport layer 15 and the quantum dot light emitting layer 11, and an electron blocking layer 20 disposed at the electron Between the transport layer 16 and the quantum dot luminescent layer 11, whereby the probability of electrons colliding with holes can be increased.
  • the refractive indices of the quantum dot light-emitting layer 11, the hole blocking layer 19, the electron transport layer 16, the electron injection layer 17, and the cathode 18 are sequentially increased, and the quantum dot light-emitting layer 11, the electron blocking layer 20, and the hole transport
  • the refractive indices of the layer 15, the hole injection layer 14, and the anode 13 are sequentially increased.
  • the refractive index is increased from the inside to the outside, that is, the light emitted from the quantum dot emitting layer 11 is emitted from the light-diffusing medium to the optically dense medium, and the light does not refract when passing through the layers to increase the light-emitting rate.
  • the quantum dot light-emitting layer 11 is a core region of light emission, and after the cathode 18 and the anode 13 in the main structure layer are plugged, the bulk structure layer excites the quantum dot light-emitting layer 11 to emit light.
  • the quantum dot light emitting layer 11 includes a red light emitting unit, a green light emitting unit, and a blue light emitting unit, and the red light emitting unit includes red quantum dots.
  • the green light-emitting unit includes green quantum dots
  • the blue light-emitting unit includes blue quantum dots
  • the blue quantum dots are more than the green quantum dots
  • the green quantum dots are more than the red quantum dots.
  • more than may be such that the blue light-emitting unit has a larger volume, area, mass or radius than the green light-emitting unit, such that the green light-emitting unit has a larger volume, area, mass or radius than the red light-emitting unit, as described in detail below.
  • the luminous flux produced by the blue quantum dots is greater than the luminous flux produced by the green quantum dots, and the luminous flux produced by the green quantum dots is greater than the luminous flux generated by the red quantum dots.
  • FIG. 2 is a schematic structural diagram of a quantum dot light-emitting layer of a quantum dot light-emitting device according to a first embodiment of the present invention.
  • the quantum dot light emitting layer 21 is rectangular and the blue light emitting unit 211 is disposed between the red light emitting unit 213 and the green light emitting unit 212.
  • the red light emitting unit 213, the blue light emitting unit 211, and the green light emitting unit 212 are sequentially distributed along a diagonal direction of the rectangular quantum dot light emitting layer 21.
  • the area ratio of the blue light emitting unit 211, the green light emitting unit 212, and the red light emitting unit 213 is (10 to 14): (6 to 9):1.
  • the ratio of the area occupied by the blue light-emitting unit 211, the green light-emitting unit 212, and the red light-emitting unit 213 is 12:8:1, and the white light index of the quantum dot light-emitting element is optimal in this case. .
  • FIG. 3 is a schematic structural diagram of a quantum dot light-emitting layer of a quantum dot light-emitting device according to a second embodiment of the present invention.
  • the red light emitting unit 313, the green light emitting unit 312, and the blue light emitting unit 311 are sequentially stacked.
  • the volume ratio of the blue light-emitting unit 311, the green light-emitting unit 312, and the red light-emitting unit 313 is (10 to 14): (6 to 9):1.
  • the blue light emitting unit 311 is disposed at the top, and since the quantum dot light emitting element of the present embodiment is a top emitting structure, the light emitted by the blue light emitting unit 311 is emitted upward, and the probability of being absorbed by the green light emitting unit 312 and the red light emitting unit 313 is lowered.
  • the required blue light emitting unit 311 is also correspondingly small.
  • the volume ratio of the blue light emitting unit 311, the green light emitting unit 312, and the red light emitting unit 313 is (10 to 14): (6 to 9):1.
  • the volume ratio of the blue light-emitting unit 311, the green light-emitting unit 312, and the red light-emitting unit 313 is 10.4:7.2:1, and the white light index of the quantum dot light-emitting element is optimized in this case.
  • FIG. 4 is a schematic structural diagram of a quantum dot light-emitting layer of a quantum dot light-emitting device according to a third embodiment of the present invention.
  • the quantum dot luminescent layer 41 is circular and blue illuminates.
  • the unit 411 and the green light-emitting unit 412 are respectively annular, the red light-emitting unit 413 is circularly located at the center of the quantum dot light-emitting layer 41, and the green light-emitting unit 412 is located between the red light-emitting unit 413 and the blue light-emitting unit 411.
  • the quantum dot emitting layer 41 is circular, and the blue light emitting unit 411 and the green light emitting unit 412 are respectively circular, and preferably, the red light emitting unit 413 is circular, the blue light emitting unit 411, the green light emitting unit 412, and the red light emitting unit. 413 is sequentially distributed along a direction in which a radius of the circular quantum dot light-emitting layer 41 points toward the center of the circle.
  • the ratio of the radius of the blue light-emitting unit 411, the green light-emitting unit 412, and the red light-emitting unit 413 is (10 to 14): (6 to 9):1.
  • the blue light emitting unit 411, the green light emitting unit 412, and the red light emitting unit 413 are annular rings, and are blue light emitting unit 411, green light emitting unit 412, and red light emitting unit 413 from the outside to the inside.
  • the blue light emitting unit 411 is disposed at the outermost portion, and the light emitted from the blue light emitting unit 411 is emitted to the periphery, and the probability of being absorbed by the red light emitting unit 413 and the green light emitting unit 412 is lowered, and the blue quantum in the blue light emitting unit 411 is required. There are fewer points.
  • the ratio of the radius of the blue light-emitting unit 411, the green light-emitting unit 412, and the red light-emitting unit 413 is (10 to 14): (6 to 9): 1, in combination with the following three, preferably, blue light.
  • the ratio of the radius of the unit 411, the green light-emitting unit 412 and the red light-emitting unit 413 is 13:7:1, and the white light index of the quantum dot light-emitting element is optimized in this case.
  • the radius of the blue light emitting unit 411 and the green light emitting unit 412 refers to their outer diameters.
  • the difference between the outer diameter and the inner diameter of the circular blue light emitting unit 411, the difference between the outer diameter and the inner diameter of the circular green light emitting unit 412, and the circular red light emitting unit 413 may also be used.
  • the ratio of the three radii is (10 to 14): (6 to 9): 1; or the area ratio of the blue light-emitting unit 411, the green light-emitting unit 412, and the red light-emitting unit 413 may be (10 to 14): 6 to 9): 1.
  • the present invention can offset by setting blue quantum dots more than green quantum dots, green quantum dots more than red quantum dots, and adopting successively reduced blue quantum dots and green quantum dots, ie, red quantum dots.
  • the light emitted by the blue light emitting unit is partially absorbed by the red light emitting unit and the green light emitting unit, and the blue light is consumed by the red light emitting unit, thereby canceling the consumption of the green light caused by the light emitted by the green light emitting unit.
  • the light emitted by the mixed blue light-emitting unit, the red light-emitting unit and the green light-emitting unit emits soft white light, that is, white light having a better index, thereby saving quantum dot material and emitting relatively pure white light.

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Abstract

提供了一种量子点发光元件，该量子点发光元件包括量子点发光层（11）和设置于量子点发光层（11）上下两侧的主体结构层，量子点发光层（11）包括红色发光单元（213）、绿色发光单元（212）以及蓝色发光单元（211），红色发光单元（213）包括红色量子点，绿色发光单元（212）包括绿色量子点，蓝色发光单元（213）包括蓝色量子点，且蓝色量子点多于绿色量子点，绿色量子点多于红色量子点。通过上述方式，能够节省量子点材料，且能发出相对较纯正的白光。

Description

量子点发光元件 【技术领域】
本发明涉及发光器件领域，特别是涉及一种量子点发光元件。
【背景技术】
量子点(Quantum Dots)是一些肉眼无法看到的、极其微小的半导体纳米晶体，是一种粒径不足10纳米的颗粒。量子点有一个与众不同的特性：每当受到光或电的刺激，量子点便会发出有色光线，光线的颜色由量子点的组成材料和大小形状决定，这一特性使得量子点能够改变光源发出的光线颜色。
目前，利用量子点技术发出白光，主要是利用RGB(红绿蓝)三基色混合后得到。然而，传统的是把蓝色量子点、红色量子点即绿色量子点混合在一起，蓝色量子点发出的光会被其四周的绿色和红色量子点吸收，从而消耗了一部分蓝色光，因此所发出的白光指数达不到要求。
因此，需要提供一种量子点发光元件，以解决上述技术问题。
【发明内容】
本发明主要解决的技术问题是提供一种量子点发光元件，能够节省量子点材料，且能发出相对较纯正的白光。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种量子点发光元件，其中，量子点发光元件包括量子点发光层和设置于量子点发光层上下两侧的主体结构层，量子点发光层包括红色发光单元、绿色发光单元以及蓝色发光单元，红色发光单元包括红色量子点，绿色发光单元包括绿色量子点，蓝色发光单元包括蓝色量子点，且蓝色量子点多于绿色量子点，绿色量子点多于红色量子点，其中主体结构层包括：基板、阳极、空穴注入层、空穴传输层、电子传输层、电子注入层以及阴极，阳极、空穴注入层、空穴传输层、量子点发光层、电子传输层、电子注入层以及阴极依次层叠设置在基板上，主体结构 层进一步包括：空穴阻挡层和电子阻挡层，空穴阻挡层设置在空穴传输层和量子点发光层之间，电子阻挡层设置在电子传输层和量子点发光层之间，量子点发光层、空穴阻挡层、电子传输层、电子注入层、阴极的折射率依次增大，量子点发光层、电子阻挡层、空穴传输层、空穴注入层、阳极的折射率依次增大。
其中，量子点发光层为矩形且蓝色发光单元设置在红色发光单元和绿色发光单元之间。
其中，红色发光单元、蓝色发光单元以及绿色发光单元，依次沿矩形的量子点发光层的一条对角线的方向分布。
其中，蓝色发光单元、绿色发光单元、红色发光单元的面积比为(10～14)∶(6～9)∶1。
其中，红色发光单元、绿色发光单元以及蓝色发光单元依次层叠设置。
其中，蓝色发光单元、绿色发光单元、红色发光单元的体积比为(10～14)∶(6～9)∶1。
其中，量子点发光层为圆形，蓝色发光单元、绿色发光单元分别为圆环形，红色发光单元呈圆形位于量子点发光层的圆心，绿色发光单元位于红色发光单元和蓝光发光单元之间。
其中，蓝色发光单元、绿色发光单元、红色发光单元三者的半径比例为(10～14)∶(6～9)∶1。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种量子点发光元件，量子点发光元件包括量子点发光层和设置于量子点发光层上下两侧的主体结构层，量子点发光层包括红色发光单元、绿色发光单元以及蓝色发光单元，红色发光单元包括红色量子点，绿色发光单元包括绿色量子点，蓝色发光单元包括蓝色量子点，且蓝色量子点多于绿色量子点，绿色量子点多于红色量子点。
其中，量子点发光层为矩形且蓝色发光单元设置在红色发光单元和绿色发光单元之间。
其中，红色发光单元、蓝色发光单元以及绿色发光单元，依次沿矩形的量子点发光层的一条对角线的方向分布。
其中，蓝色发光单元、绿色发光单元、红色发光单元的面积比为(10～14)∶(6～9)∶1。
其中，红色发光单元、绿色发光单元以及蓝色发光单元依次层叠设置。
其中，蓝色发光单元、绿色发光单元、红色发光单元的体积比为(10～14)∶(6～9)∶1。
其中，量子点发光层为圆形，蓝色发光单元、绿色发光单元分别为圆环形，红色发光单元呈圆形位于量子点发光层的圆心，绿色发光单元位于红色发光单元和蓝光发光单元之间。
其中，蓝色发光单元、绿色发光单元、红色发光单元三者的半径比例为(10～14)∶(6～9)∶1。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种量子点发光元件，量子点发光元件包括量子点发光层和设置于量子点发光层上下两侧的主体结构层，量子点发光层包括红色发光单元、绿色发光单元以及蓝色发光单元，红色发光单元包括红色量子点，绿色发光单元包括绿色量子点，蓝色发光单元包括蓝色量子点，且蓝色量子点产生的光通量大于绿色量子点产生的光通量，绿色量子点产生的光通量大于红色量子点产生的光通量。
其中，蓝色量子点多于绿色量子点，绿色量子点多于红色量子点。
本发明的有益效果是：本发明通过设置蓝色量子点多于绿色量子点，绿色量子点多于红色量子点，采用依次减少的蓝色量子点、绿色量子点即红色量子点，可以抵消蓝色发光单元发出的光被红色发光单元和绿色发光单元部分吸收而导致的蓝色光的消耗，同时还可以抵消绿色发光单元发出的光被红色发光单元吸收而导致的绿色光的消耗，由此而混合构成的蓝色发光单元、红色发光单元和绿色发光单元发出的光便可发出柔和的白光，即获得指数较佳的白光，从而能够节省量子点材料，且能发出相对较纯正的白光。
【附图说明】
图1是本发明量子点发光元件的结构示意图；
图2是本发明第一实施例量子点发光元件的量子点发光层的结构示意图；
图3是本发明第二实施例量子点发光元件的量子点发光层的结构示意图；
图4是本发明第三实施例量子点发光元件的量子点发光层的结构示意图。
【具体实施方式】
下面结合附图和实施例对本发明进行详细的说明。
请参阅图1，图1是本发明量子点发光元件的结构示意图。在本实施例中，量子点发光元件包括量子点发光层11和设置于量子点发光层11上下两侧的主体结构层(未标示)。
优选地，量子点发光元件为白光QLED(Quantum Dots LED)元件。
主体结构层包括：基板12、阳极13、空穴注入层14、空穴传输层15、电子传输层16、电子注入层17以及阴极18，阳极13、空穴注入层14、空穴传输层15、量子点发光层11、电子传输层16、电子注入层17以及阴极18依次层叠设置在基板12上。
优选地，主体结构层还可以进一步包括：空穴阻挡层19和电子阻挡层20，空穴阻挡层19设置在空穴传输层15和量子点发光层11之间，电子阻挡层20设置在电子传输层16和量子点发光层11之间，由此可以增加的电子与空穴碰撞的概率。
更为优选地，量子点发光层11、空穴阻挡层19、电子传输层16、电子注入层17、阴极18的折射率依次增大，量子点发光层11、电子阻挡层20、空穴传输层15、空穴注入层14、阳极13的折射率依次增大。采用折射率由里到外依次增大，即量子点发光层11发出的光从光疏介质射向光密介质，光穿过各层的时候不会发生折射，以提高出光率。
在量子点发光元件中，量子点发光层11是发光的核心区域，在主体结构层中的阴极18和阳极13插电后，主体结构层激发量子点发光层11发光。
量子点发光层11包括红色发光单元、绿色发光单元以及蓝色发光单元，红色发光单元包括红色量子点。
绿色发光单元包括绿色量子点，蓝色发光单元包括蓝色量子点，且蓝色量子点多于绿色量子点，绿色量子点多于红色量子点。其中，多于可以是使得蓝色发光单元体积、面积、质量或者半径大于绿色发光单元，使得绿色发光单元体积、面积、质量或者半径大于红色发光单元，具体请参见下文的描述。
换言之，蓝色量子点产生的光通量大于绿色量子点产生的光通量，绿色量子点产生的光通量大于红色量子点产生的光通量。
请结合图1进一步参阅图2，图2是本发明第一实施例量子点发光元件的量子点发光层的结构示意图。在本实施例中，量子点发光层21为矩形且蓝色发光单元211设置在红色发光单元213和绿色发光单元212之间。
优选地，红色发光单元213、蓝色发光单元211以及绿色发光单元212，依次沿矩形的量子点发光层21的一条对角线的方向分布。
更为优选地，蓝色发光单元211、绿色发光单元212、红色发光单元213的面积比为(10～14)∶(6～9)∶1。
结合下表一，优选地，蓝色发光单元211、绿色发光单元212以及红色发光单元213所占的面积比例为12∶8∶1，量子点发光元件的白光指数在这种情况下达到最佳。
表一第一实施例中不同表面积比例下的白光指数表
Figure PCTCN2015080878-appb-000001
Figure PCTCN2015080878-appb-000002
请结合图1进一步参阅图3，图3是本发明第二实施例量子点发光元件的量子点发光层的结构示意图。在本实施例中，优选地，红色发光单元313、绿色发光单元312以及蓝色发光单元311依次层叠设置。蓝色发光单元311、绿色发光单元312、红色发光单元313的体积比为(10～14)∶(6～9)∶1。
由上至下分别是蓝色发光单元311、绿色发光单元312、红色发光单元313。蓝色发光单元311设置在最顶部，由于本方案的量子点发光元件为顶发射结构，蓝色发光单元311发出的光向上发出，被绿色发光单元312以及红色发光单元313吸收的概率降低，所需要的蓝色发光单元311也相应较少。
在本实施例中，蓝色发光单元311、绿色发光单元312与红色发光单元313的体积比例是(10～14)∶(6～9)∶1。结合下表二，优选地，蓝色发光单元311、绿色发光单元312与红色发光单元313的体积比例是10.4∶7.2∶1，量子点发光元件的白光指数在这种情况下达到最佳。
表二第二实施例中不同表面积比例下的白光指数表
Figure PCTCN2015080878-appb-000003
请结合图1进一步参阅图4，图4是本发明第三实施例量子点发光元件的量子点发光层的结构示意图。在本实施例中，量子点发光层41为圆形，蓝色发光 单元411、绿色发光单元412分别为圆环形，红色发光单元413呈圆形位于量子点发光层41的圆心，绿色发光单元412位于红色发光单元413和蓝光发光单元411之间。量子点发光层41为圆形，蓝色发光单元411、绿色发光单元412分别为圆环形，优选地，红色发光单元413为圆形，蓝色发光单元411、绿色发光单元412、红色发光单元413依次沿圆形的量子点发光层41的一条半径指向圆心的方向分布。其中，蓝色发光单元411、绿色发光单元412、红色发光单元413三者的半径比例为(10～14)∶(6～9)∶1。
蓝色发光单元411、绿色发光单元412以及红色发光单元413为圆环设置，由外至内分别是蓝色发光单元411、绿色发光单元412、红色发光单元413。蓝色发光单元411设置在最外部，蓝色发光单元411发出的光向四周发出，被红色发光单元413以及绿色发光单元412吸收的概率降低，所需要的蓝色发光单元411中的蓝色量子点也相应较少。
在本实施例中，蓝色发光单元411、绿色发光单元412与红色发光单元413的半径比例是(10～14)∶(6～9)∶1，结合下表三，优选地，蓝色发光单元411、绿色发光单元412与红色发光单元413的半径比例是13∶7∶1，量子点发光元件的白光指数在这种情况下达到最佳。其中，蓝色发光单元411和绿色发光单元412的半径指它们的外径。
在其他实施例中，也可以是圆环形的蓝色发光单元411的外径与内径之差、圆环形的绿色发光单元412的外径与内径之差、圆形的红色发光单元413的半径三者的比例为(10～14)∶(6～9)∶1；或者也可以是蓝色发光单元411、绿色发光单元412、红色发光单元413的面积比为(10～14)∶(6～9)∶1。
表三第三实施例中不同表面积比例下的白光指数表
Figure PCTCN2015080878-appb-000004
Figure PCTCN2015080878-appb-000005
区别于现有技术的情况，本发明通过设置蓝色量子点多于绿色量子点，绿色量子点多于红色量子点，采用依次减少的蓝色量子点、绿色量子点即红色量子点，可以抵消蓝色发光单元发出的光被红色发光单元和绿色发光单元部分吸收而导致的蓝色光的消耗，同时还可以抵消绿色发光单元发出的光被红色发光单元吸收而导致的绿色光的消耗，由此而混合构成的蓝色发光单元、红色发光单元和绿色发光单元发出的光便可发出柔和的白光，即获得指数较佳的白光，从而能够节省量子点材料，且能发出相对较纯正的白光。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (18)

  1. 一种量子点发光元件，其中，所述量子点发光元件包括量子点发光层和设置于所述量子点发光层上下两侧的主体结构层，所述量子点发光层包括红色发光单元、绿色发光单元以及蓝色发光单元，所述红色发光单元包括红色量子点，所述绿色发光单元包括绿色量子点，所述蓝色发光单元包括蓝色量子点，且所述蓝色量子点多于所述绿色量子点，所述绿色量子点多于所述红色量子点，其中主体结构层包括：基板、阳极、空穴注入层、空穴传输层、电子传输层、电子注入层以及阴极，所述阳极、所述空穴注入层、所述空穴传输层、所述量子点发光层、所述电子传输层、所述电子注入层以及所述阴极依次层叠设置在基板上，主体结构层进一步包括：空穴阻挡层和电子阻挡层，所述空穴阻挡层设置在所述空穴传输层和所述量子点发光层之间，所述电子阻挡层设置在所述电子传输层和所述量子点发光层之间，所述量子点发光层、所述空穴阻挡层、所述电子传输层、所述电子注入层、所述阴极的折射率依次增大，所述量子点发光层、所述电子阻挡层、所述空穴传输层、所述空穴注入层、所述阳极的折射率依次增大。
  2. 根据权利要求1所述的量子点发光元件，其中，所述量子点发光层为矩形且所述蓝色发光单元设置在所述红色发光单元和所述绿色发光单元之间。
  3. 根据权利要求2所述的量子点发光元件，其中，所述红色发光单元、蓝色发光单元以及绿色发光单元，依次沿矩形的所述量子点发光层的一条对角线的方向分布。
  4. 根据权利要求3所述的量子点发光元件，其中，所述蓝色发光单元、所述绿色发光单元、所述红色发光单元的面积比为(10～14)∶(6～9)∶1。
  5. 根据权利要求1所述的量子点发光元件，其中，所述红色发光单元、绿色发光单元以及蓝色发光单元依次层叠设置。
  6. 根据权利要求5所述的量子点发光元件，其中，所述蓝色发光单元、所 述绿色发光单元、所述红色发光单元的体积比为(10～14)∶(6～9)∶1。
  7. 根据权利要求1所述的量子点发光元件，其中，所述量子点发光层为圆形，所述蓝色发光单元、所述绿色发光单元分别为圆环形，所述红色发光单元呈圆形位于所述量子点发光层的圆心，所述绿色发光单元位于所述红色发光单元和所述蓝光发光单元之间。
  8. 根据权利要求7所述的量子点发光元件，其中，所述蓝色发光单元、所述绿色发光单元、所述红色发光单元三者的半径比例为(10～14)∶(6～9)∶1。
  9. 一种量子点发光元件，其中，所述量子点发光元件包括量子点发光层和设置于所述量子点发光层上下两侧的主体结构层，所述量子点发光层包括红色发光单元、绿色发光单元以及蓝色发光单元，所述红色发光单元包括红色量子点，所述绿色发光单元包括绿色量子点，所述蓝色发光单元包括蓝色量子点，且所述蓝色量子点多于所述绿色量子点，所述绿色量子点多于所述红色量子点。
  10. 根据权利要求9所述的量子点发光元件，其中，所述量子点发光层为矩形且所述蓝色发光单元设置在所述红色发光单元和所述绿色发光单元之间。
  11. 根据权利要求10所述的量子点发光元件，其中，所述红色发光单元、蓝色发光单元以及绿色发光单元，依次沿矩形的所述量子点发光层的一条对角线的方向分布。
  12. 根据权利要求11所述的量子点发光元件，其中，所述蓝色发光单元、所述绿色发光单元、所述红色发光单元的面积比为(10～14)∶(6～9)∶1。
  13. 根据权利要求9所述的量子点发光元件，其中，所述红色发光单元、绿色发光单元以及蓝色发光单元依次层叠设置。
  14. 根据权利要求13所述的量子点发光元件，其中，所述蓝色发光单元、所述绿色发光单元、所述红色发光单元的体积比为(10～14)∶(6～9)∶1。
  15. 根据权利要求9所述的量子点发光元件，其中，所述量子点发光层为圆形，所述蓝色发光单元、所述绿色发光单元分别为圆环形，所述红色发光单元呈圆形位于所述量子点发光层的圆心，所述绿色发光单元位于所述红色发光单 元和所述蓝光发光单元之间。
  16. 根据权利要求15所述的量子点发光元件，其中，所述蓝色发光单元、所述绿色发光单元、所述红色发光单元三者的半径比例为(10～14)∶(6～9)∶1。
  17. 一种量子点发光元件，其中，所述量子点发光元件包括量子点发光层和设置于所述量子点发光层上下两侧的主体结构层，所述量子点发光层包括红色发光单元、绿色发光单元以及蓝色发光单元，所述红色发光单元包括红色量子点，所述绿色发光单元包括绿色量子点，所述蓝色发光单元包括蓝色量子点，且所述蓝色量子点产生的光通量大于所述绿色量子点产生的光通量，所述绿色量子点产生的光通量大于所述红色量子点产生的光通量。
  18. 根据权利要求17所述的量子点发光元件，其中，所述蓝色量子点多于所述绿色量子点，所述绿色量子点多于所述红色量子点。
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